Treatment liquid temperature control device

Abstract

The process liquid temperature control device comprises a block body, formed of a monolithic silicon carbide sintered body, having a flow path for circulating semiconductor process liquid therein; and a temperature control unit, disposed within the block body, for controlling the temperature of the semiconductor process liquid flowing through the flow path. This reduces the number of components, leading to miniaturization and cost reduction. Furthermore, it enhances heat conduction between the process liquid and the temperature control unit, improving heat exchange efficiency.

Description

Technical Field

[0001] The invention relates to a treatment liquid temperature regulating device. Background Art

[0002] For example, Patent Document 1 discloses a process liquid temperature control device for adjusting the temperature of a semiconductor process liquid (hereinafter referred to as the process liquid). The device comprises a block having a flow path groove formed on its surface. A corrosion-resistant plate resistant to corrosion of the process liquid, a heat conducting plate formed of a metal material, and a Peltier module serving as a temperature control unit are sequentially stacked on the surface of the block. In the device, heat exchange is performed between the block and the temperature control unit via the corrosion-resistant plate and the heat conducting plate, thereby adjusting the temperature of the process liquid.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2008-202816 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] However, in the aforementioned treatment liquid temperature control device, two components, a corrosion-resistant plate and a heat-conducting plate, are located between the block and the temperature control unit. Consequently, the number of components in the device as a whole increases, leading to a larger device and higher costs. Furthermore, as a treatment liquid temperature control device, it is required to further improve the heat exchange efficiency between the treatment liquid and the temperature control unit.

[0008] Therefore, an object of the present invention is to provide a processing liquid temperature control device that can achieve miniaturization and cost reduction and improve heat exchange efficiency.

[0009] Solutions to Problems

[0010] A processing liquid temperature control device according to one embodiment of the present invention comprises: a block having an integral structure composed of a silicon carbide sintered body and having a flow path formed inside for circulating semiconductor processing liquid and a partition wall separating the flow path from the outside; and a temperature adjustment part, which is arranged on the outer surface of the block and performs heat exchange with the semiconductor processing liquid via the partition wall.

[0011] Effects of the Invention

[0012] According to the above aspect, it is possible to provide a processing liquid temperature control device that can achieve miniaturization and cost reduction and improve heat exchange efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a side view of the processing liquid temperature control device according to the embodiment.

[0014] Figure 2 It is a top view of a block of the processing liquid temperature control device according to the embodiment.

[0015] Figure 3 yes Figure 2 Sectional view III-III.

[0016] Figure 4 yes Figure 2 IV-IV sectional view of FIG.

[0017] Figure 5 This is a first modified example of the flow path of the processing liquid temperature control device according to the embodiment.

[0018] Figure 6 This is a second modified example of the flow path of the processing liquid temperature control device according to the embodiment.

[0019] Description of reference numerals:

[0020] 1…processing liquid temperature control device, 10…block, 20…first silicon carbide material, 21…first main surface, 22…first bonding surface, 23…first flow path groove, 24…partition wall, 30…second silicon carbide material, 31…second main surface, 32…second bonding surface, 33…second flow path groove, 34…partition wall, 40…third silicon carbide material, 41…first sheet surface, 42…second sheet surface, 43…first communicating hole, 44…second communicating hole, 45…inlet opening, 46…outlet opening, 51…first processing liquid piping, 52…second processing liquid piping, 60…temperature adjustment section, 70…water jacket, 71…heat sink block, 72…cooling water pipe, F…flow path, F1…first serpentine flow path, F2…second serpentine flow path, F3…inlet flow path, F4…outlet flow path, T…thickness direction, D1…first direction, D2…second direction DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Figure 1 The processing liquid temperature control device 1 shown is used to adjust the temperature of the processing liquid (semiconductor processing liquid) used in the semiconductor manufacturing process. As the processing liquid, an acidic aqueous solution such as hydrochloric acid, sulfuric acid, phosphoric acid, etc. used in wet processes (RCA cleaning) and wet etching, or ozone water can be used.

[0022] <Overall Structure of the Processing Liquid Temperature Control Device>

[0023] like Figure 1 As shown, the processing liquid temperature control device 1 includes a block 10 , a first processing liquid pipe 51 , a second processing liquid pipe 52 , a pair of temperature control units 60 , 60 , and a pair of water jackets 70 , 70 .

[0024] <Block>

[0025] The block 10 is in the form of a block made of silicon carbide sintered body. Figures 2 to 4 As shown, a flow path F for the treatment liquid to flow is formed inside the block 10. The block 10 is in the shape of a flat plate. Figure 1 As shown, the block 10 has a first main surface 21 and a second main surface 31 as outer surfaces spaced apart from each other in the thickness direction T of the block 10. The first main surface 21 and the second main surface 31 are flat and parallel to each other.

[0026] <First Processing Liquid Piping, Second Processing Liquid Piping>

[0027] like Figure 1 and Figure 2 As shown, the first treatment liquid piping 51 and the second treatment liquid piping 52 are connected to the block 10. The first treatment liquid piping 51 is a piping for supplying treatment liquid into the block 10, and the second treatment liquid piping 52 is a piping for discharging treatment liquid from the block 10 to the outside. The first treatment liquid piping 51 and the second treatment liquid piping 52 are made of a material that is corrosion-resistant to the treatment liquid, such as PTFE, PFA, etc. The ends of the first treatment liquid piping 51 and the second treatment liquid piping 52 are fixed to the block 10 by, for example, bolting. A sealing member such as an O-ring is provided at the connection portion between the first treatment liquid piping 51 and the second treatment liquid piping 52 and the block 10 to prevent the treatment liquid from leaking to the outside.

[0028] <Temperature Adjustment Section>

[0029] like Figure 1 As shown, a pair of temperature adjustment sections 60, 60 are provided, corresponding to the first and second principal surfaces 21, 31 of the block 10, respectively. The temperature adjustment sections 60, 60 are in the form of flat plates stacked on the first and second principal surfaces 21, 31. No other sheet, flat plate, or the like is interposed between the temperature adjustment sections 60, 60 and the first and second principal surfaces 21, 31. In other words, the temperature adjustment sections 60, 60 are in direct contact with the first and second principal surfaces 21, 31.

[0030] In the present embodiment, a Peltier module including a Peltier element is used as the temperature adjustment units 60 , 60 .

[0031] <Water Jacket>

[0032] A pair of water jackets 70, 70 are provided on the surface of each temperature adjustment portion 60, 60 opposite to the block body 10, corresponding to each temperature adjustment portion 60, 60. The water jacket 70 includes a flat heat sink block 71 stacked on the temperature adjustment portion 60, and a cooling water pipe 72 provided so as to pass through the interior of the heat sink block 71.

[0033] Thus, the processing liquid temperature control device 1 is formed into a structure in which the temperature control parts 60, 60 and the water jackets 70, 70 are stacked on both sides of the block body 10 in the thickness direction T. These blocks 10 are integrally fixed to the temperature control parts 60 and the water jackets 70 by fixing members such as bolts penetrating in the thickness direction T.

[0034] <Detailed structure of the block>

[0035] Hereinafter, the structure of the block 10 will be described in more detail.

[0036] like Figure 1 、 Figure 3 and Figure 4 As shown, the block 10 includes a first silicon carbide material 20 , a second silicon carbide material 30 , and a third silicon carbide material 40 , each formed of silicon carbide.

[0037] <First Silicon Carbide Material 20>

[0038] like Figure 1 As shown, the first silicon carbide material 20 is in the shape of a rectangular flat plate extending along a first direction D1 and a second direction D2 that are perpendicular to the thickness direction T and perpendicular to each other. Figure 1 、 Figure 3 、 Figure 4 The surface on the lower side of the PCB becomes the first main surface 21.

[0039] The surface of the first silicon carbide material 20 opposite to the first main surface 21, that is, the other side in the thickness direction T ( Figure 1 、 Figure 3 、 Figure 4 The surface on the upper side of the first main surface 21 becomes the first bonding surface 22. The first bonding surface 22 is a plane parallel to the first main surface 21.

[0040] like Figure 3 and Figure 4 As shown, a first flow groove 23 is formed in the first silicon carbide material 20 so as to be recessed from the first bonding surface 22 toward one side in the thickness direction T. The first flow groove 23 extends along an imaginary plane including the first direction D1 and the second direction D2. The thickness of the partition wall 24 of the first silicon carbide material 20 separating the first flow groove 23 from the first main surface 21 in the thickness direction T, i.e., the dimension in the thickness direction T1, is set to, for example, 0.5 to 5.0 mm, more preferably 0.5 to 3.0 mm.

[0041] <Second Silicon Carbide Material>

[0042] like Figure 1 and Figure 2As shown, the second silicon carbide material 30, like the first silicon carbide material, has a rectangular flat plate shape extending in the first direction D1 and the second direction D2. The dimension of the second silicon carbide material 30 in the first direction D1 is smaller than that of the first silicon carbide material 20. The dimension of the second silicon carbide material 30 in the second direction D2 is the same as that of the first silicon carbide material 20. The surface of the first silicon carbide material 20 on one side in the thickness direction T serves as the second main surface 31.

[0043] like Figure 1 、 Figure 3 and Figure 4 As shown, the surface of the second silicon carbide material 30 opposite to the second main surface 31 , that is, the surface in the thickness direction T, becomes the second bonding surface 32 . The second bonding surface 32 is a plane parallel to the second main surface 31 .

[0044] like Figure 3 and Figure 4 As shown, a second flow groove 33 is formed on the second joint surface 32 so as to be recessed from the second joint surface 32 toward the other side in the thickness direction T. The second flow groove 33 extends along an imaginary plane including the first direction D1 and the second direction D2. The thickness of the partition wall 34 of the second silicon carbide material 30 separating the second flow groove 33 from the second main surface 31 in the thickness direction T is set to, for example, 0.5 to 5.0 mm, more preferably 0.5 to 3.0 mm.

[0045] <Third Silicon Carbide Material>

[0046] like Figure 1 As shown, the third silicon carbide material 40 is in the form of a sheet extending in a rectangular shape along the first direction D1 and the second direction D2. Figure 2 As shown, the dimensions of the third silicon carbide material 40 in the first direction D1 and the second direction D2 are the same as the dimensions of the first silicon carbide material 20 in the first direction D1 and the second direction D2.

[0047] like Figure 1 、 Figure 3 and Figure 4 As shown, the surface of the third silicon carbide material 40 on one side in the thickness direction T becomes the first sheet surface 41. The surface of the third silicon carbide material 40 on the other side in the thickness direction T becomes the second sheet surface 42. Figure 2 and Figure 3As shown, the third silicon carbide material 40 is formed with a first communicating hole 43, a second communicating hole 44, an inlet opening 45, and an outlet opening 46 that respectively penetrate the first sheet surface 41 and the second sheet surface 42 in the thickness direction T. The thickness of the third silicon carbide material 40, i.e., the dimension in the thickness direction, is set to, for example, 0.5 to 5.0 mm, more preferably 0.5 to 3.0 mm. In other words, the thickness of the partition wall 24 of the first silicon carbide material 20, the thickness of the partition wall 34 of the second silicon carbide material 30, and the thickness of the third silicon carbide material 40 are all the same.

[0048] <Silicon Carbide Sintered Body>

[0049] The block 10 is produced by integrally sintering the first silicon carbide material 20 , the second silicon carbide material 30 , and the third silicon carbide material 40 .

[0050] When the block 10 is sintered, Figure 1 As shown, the third silicon carbide material 40 is arranged between the first bonding surface 22 of the first silicon carbide material 20 and the second bonding surface 32 of the second silicon carbide material 30. As a result, the entire area of ​​the first bonding surface 22 of the first silicon carbide material 20 is covered by the first sheet surface 41 of the third silicon carbide material 40. The second silicon carbide material 30 is biased toward one side of the first direction D1 ( Figures 1 to 4 The second sheet surface 42 of the third silicon carbide material 40 is laminated in a manner such that the second bonding surface 32 of the second sheet surface 42 is entirely covered by the second sheet surface 42 of the third silicon carbide material 40. Figures 1 to 4 The region (left side of the silicon carbide material) is exposed to the outside. When the first silicon carbide material 20, the second silicon carbide material 30, and the third silicon carbide material 40 are stacked, an adhesive is interposed between them. This results in an integrated structure of the first silicon carbide material 20, the second silicon carbide material 30, and the third silicon carbide material 40.

[0051] By subjecting the integrated structure of the first, second, and third silicon carbide materials 20 , 30 , and 40 to a high-temperature heat treatment, a bulk body 10 , which is a silicon carbide sintered body of the first, second, and third silicon carbide materials 20 , 30 , and 40 , is produced.

[0052] <Flow path within the block>

[0053] The flow path F inside the block is defined by the first flow grooves 23 of the first silicon carbide material 20 , the second flow grooves 33 of the second silicon carbide material 30 , and the first and second sheet surfaces 41 and 42 of the third silicon carbide material 40 .

[0054] The first flow path grooves 23 of the first silicon carbide material 20 and the first sheet surface 41 of the third silicon carbide material 40 form a first serpentine flow path F1 , an inlet flow path F3 , and a outlet flow path F4 .

[0055] like Figure 3 As shown, the first serpentine flow path F1 is formed at a position offset to one side of the first direction D1. The first serpentine flow path F1 is a flow path F that extends toward the second direction D2 while reciprocating between one side and the other side of the first direction D1.

[0056] The introduction flow path F3 is connected to the first serpentine flow path F1 on the second direction D2 side ( Figure 2 The inlet flow path F3 is connected to the end portion (lower side) of the third silicon carbide material 40 and extends to the corner portion on the other side in the first direction D1 and one side in the second direction D2. The inlet flow path F3 communicates with the first processing liquid piping 51 through the inlet opening 45 of the third silicon carbide material 40.

[0057] The lead-out flow path F4 is connected to the other side of the first serpentine flow path F1 in the second direction D2, which is the outlet side of the treatment liquid ( Figure 2 The outlet flow path F4 is connected to the end portion (upper side) of the third silicon carbide material 40 and extends to the corner portion on the other side of the first direction D1 and the other side of the second direction D2. The outlet flow path F4 communicates with the second processing liquid piping 52 through the outlet opening 46 of the third silicon carbide material 40.

[0058] The second serpentine flow path F2 is formed by the second flow path grooves 33 of the second silicon carbide material 30 and the second sheet surface 42 of the third silicon carbide material 40. The second serpentine flow path F2 is formed in an area that overlaps with the first serpentine flow path F1 when viewed from above. That is, like the first serpentine flow path F1, the second serpentine flow path F2 is a flow path F that extends in the second direction D2 while traversing between one side and the other side of the first direction D1.

[0059] An end portion of the second serpentine flow path F2 on the second direction D2 side, which serves as an inlet side for the processing liquid, communicates with the first serpentine flow path F1 via the first communication hole 43 of the third silicon carbide material 40 .

[0060] An end portion of the second serpentine flow path F2 on the other side in the second direction, which serves as an outlet side for the processing liquid, communicates with the first serpentine flow path F1 via the second communication hole 44 of the third silicon carbide material 40 .

[0061] <Operation of the Processing Liquid Temperature Control Device>

[0062] When adjusting the temperature of the processing liquid using the processing liquid temperature control device 1 having the above-described structure, the processing liquid is introduced into the flow path F of the block 10 via the first processing liquid piping 51. The processing liquid introduced into the block 10 from the first processing liquid piping 51 is introduced into the first serpentine flow path F1 and the second serpentine flow path F2 in parallel via the introduction flow path F3. While the processing liquid flows through the first serpentine flow path F1 and the second serpentine flow path F2, its temperature is adjusted by the temperature control unit 60 disposed on the first main surface 21 and the second main surface 31.

[0063] Specifically, by energizing the Peltier module, heat exchange occurs between the Peltier element and the process liquid via the partition walls 24 and 34 of the first and second silicon carbide materials 20 and 30. This adjusts the temperature of the process liquid to an appropriate value. Furthermore, heat is dissipated or supplied to the Peltier module via the water jacket 70.

[0064] The processing liquid having been brought to an appropriate temperature by the temperature adjustment unit 60 flows from the first serpentine flow path F1 and the second serpentine flow path F2 into the outlet flow path F4, and is then guided to the second processing liquid pipe 52 through the outlet opening 46. Thus, the processing liquid is discharged to the outside of the processing liquid temperature control device 1.

[0065] <Effects>

[0066] The treatment liquid introduced into the treatment liquid temperature control device 1 is highly corrosive. Therefore, the material forming the flow path F through which the treatment liquid passes is required to have high corrosion resistance.

[0067] Recent advances in silicon carbide manufacturing technology have enabled the production of high-purity silicon carbide materials with minimal contamination of impurities such as metal powder during the manufacturing process. Impurities in silicon carbide materials are prone to corrosion, originating at the site of their inclusion. High-purity silicon carbide, on the other hand, exhibits high corrosion resistance to process fluids, eliminating the need for corrosion.

[0068] In this context, the block 10 of this embodiment is formed of a silicon carbide sintered body made of a high-purity silicon carbide material, thereby preventing the block 10 itself from being corroded by the processing liquid flowing through the flow path F.

[0069] By forming the process liquid flow path F solely from silicon carbide material, there is no need for highly corrosion-resistant components such as corrosion-resistant plates, or heat-conducting plates to hold the corrosion-resistant plates. Consequently, the only components between the process liquid flowing through the flow path F and the temperature adjustment units 60, 60 that adjust the temperature of the process liquid are the partitions 24, 34 of the first silicon carbide material 20 and the second silicon carbide material 30. This reduces the number of components in the process liquid temperature control device 1 as a whole, enabling a more compact device while minimizing costs.

[0070] Furthermore, by making the silicon carbide material itself corrosion-resistant, the thickness of the partitions 24 and 34 between the processing liquid and the temperature adjustment section in the block 10 can be reduced. Consequently, the thickness of the partitions 24 and 34 can be set to, for example, 0.5 to 5.0 mm, more preferably 0.5 to 3.0 mm. By thus sufficiently reducing the distance between the processing liquid and the temperature adjustment section 60, the dimension in the thickness direction T can be further reduced, further miniaturizing the entire device.

[0071] Furthermore, by reducing the thickness of the walls 24 and 34 in the block 10, the efficiency of heat exchange between the treatment liquid and the temperature adjustment unit 60 can be improved. The thermal conductivity of the silicon carbide material itself is lower than that of the corrosion-resistant plates and heat-conducting plates used in the past. By thinning the walls 24 and 34 of such silicon carbide material to the above dimensions, the heat capacity of the walls 24 and 34 can be made sufficiently smaller than in the past. This can promote heat exchange between the treatment liquid and the temperature adjustment unit 60, and improve the responsiveness of the temperature adjustment unit 60 to changes in the temperature of the treatment liquid.

[0072] Furthermore, the block 10 of this embodiment can be obtained by laminating a plurality of silicon carbide materials having flow grooves formed therein and subjecting them to heat treatment. Therefore, even without adopting a special production method, a block 10 having high corrosion resistance and high heat exchange efficiency can be easily obtained.

[0073] As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably within the range which does not deviate from the technical idea of ​​this invention.

[0074] For example, in the embodiment, an example in which a Peltier module is used as the temperature adjustment unit 60 has been described. However, other structures such as a heater may be used as long as the temperature of the processing liquid can be adjusted.

[0075] In the embodiment, the flow path F of the block 10 is configured to include a first serpentine flow path F1 and a second serpentine flow path F2. However, for example, a configuration comprising only the first serpentine flow path F1 is also possible. In this case, the temperature adjustment portion 60 may be provided only on the first principal surface 21 of the first principal surface 21 and the second principal surface 31. In other words, a pair of temperature adjustment portions 60 are not necessarily required; a single temperature adjustment portion may be provided.

[0076] In addition, in the embodiment, the heat exchange portion of the flow path F of the block 10 is formed into a serpentine shape such as the first serpentine flow path F1 and the second serpentine flow path F2, but the present invention is not limited thereto. Figure 5 The vortex flow path F5 shown in FIG. 1 may also be configured as Figure 6 The square spiral flow path F6 shown.

[0077] Furthermore, in the embodiment, an example is described in which the block 10 is composed of the first silicon carbide material 20, the second silicon carbide material 30, and the third silicon carbide material 40, but the present invention is not limited to this. The block 10 may also be composed of two of these three silicon carbide materials. In addition, a block having a more complex flow path may be constructed using four or more silicon carbide materials. The shape of the flow path is also not limited to the embodiment and can be changed arbitrarily.

Claims

1. A treatment liquid temperature control device, comprising: A block having an integral structure composed of a silicon carbide sintered body and having a flow path formed therein for flowing a semiconductor processing liquid and a partition wall separating the flow path from the outside; as well as a temperature adjustment portion provided on the outer surface of the block and exchanging heat with the semiconductor processing liquid via the partition wall; The block has a first main surface and a second main surface as the outer surface, which are arranged to be separated from each other in the thickness direction. The block has: a first silicon carbide material having the first main surface and having a first flow path groove forming a portion of the flow path formed on a surface opposite to the first main surface; a second silicon carbide material having the second main surface and having a second flow path groove forming a portion of the flow path formed on a surface opposite to the second main surface; as well as a third silicon carbide material disposed between the first silicon carbide material and the second silicon carbide material, forming a first flow path together with the first flow path groove and forming a second flow path together with the second flow path groove, and having a connecting portion for interconnecting the first flow path and the second flow path; The block is an integral structure formed by the first silicon carbide material, the second silicon carbide material, and the third silicon carbide material.

2. The treatment liquid temperature control device according to claim 1, wherein: The thickness of the partition walls is in the range of 0.5 to 5.0 mm.

3. The treatment liquid temperature control device according to claim 1, wherein: The flow path extends in a direction perpendicular to the thickness direction, The temperature adjustment portion is provided so as to be in contact with the first main surface and the second main surface, respectively.

4. The treatment liquid temperature control device according to claim 2, wherein: The flow path extends in a direction perpendicular to the thickness direction, The temperature adjustment portion is provided so as to be in contact with the first main surface and the second main surface, respectively.

5. The treatment liquid temperature control device according to any one of claims 1 to 4, wherein: The temperature adjustment unit is a Peltier module composed of a Peltier element.

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