Insulated Gate Bipolar Transistor Fault Detection Method, Device, Equipment and Storage Medium

By combining the timing judgment of voltage value and fault flag pin status in the motor controller, the problem of false alarm fault of insulated gate bipolar transistors in the motor controller of new energy vehicles is solved, and more accurate fault diagnosis is achieved.

CN114994485BActive Publication Date: 2025-07-04DONGFENG LIUZHOU MOTOR
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Patent Information

Application Number
CN202210464934.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-04-29
Publication Date
2025-07-04
Estimated Expiration
2042-04-29

AI Technical Summary

Technical Problem

Existing new energy vehicle motor controllers are prone to false alarms in the fault diagnosis of insulated gate bipolar transistors, and cannot effectively distinguish between real faults and false alarms, affecting the operation of the entire vehicle.

Method used

When the current voltage value of the motor controller is less than the preset threshold value and the fault flag pin of the insulated gate bipolar transistor is activated, the timer is controlled to count the fault after the timing value is greater than the preset time, and determine whether the fault is falsely reported based on the voltage value and the fault flag pin status.

Benefits of technology

It effectively avoids false alarm faults of the motor controller for insulated gate bipolar transistors, improves the accuracy of fault diagnosis, and reduces false alarms.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention discloses a method, device, equipment and storage medium for detecting faults of an insulated gate bipolar transistor. When the current voltage value corresponding to the motor controller is less than a preset voltage threshold and the fault pin of the insulated gate bipolar transistor is activated, the timer in the motor controller is controlled to start timing; when the timing value corresponding to the timer is greater than a preset timing value, it is determined that the insulated gate bipolar transistor has a fault. Compared with the existing hardware chip that directly feeds back a fault when the fault flag pin of the insulated gate bipolar transistor is detected to be activated, the present invention can jointly judge whether the motor controller misreports a fault of the insulated gate bipolar transistor according to the current voltage value corresponding to the motor controller and whether the fault flag pin of the insulated gate bipolar transistor is activated, and when the timing value corresponding to the timer is greater than the preset timing value, it is determined that the insulated gate bipolar transistor has a fault, which can avoid the motor controller misreporting a fault of the insulated gate bipolar transistor.
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Description

Technical Field

[0001] The present invention relates to the technical field of automobiles, and particularly to a method, device, equipment and storage medium for detecting faults of insulated gate bipolar transistors. Background Art

[0002] The existing fault diagnosis of insulated gate bipolar transistors in new energy vehicle motor controllers is usually set as a hardware fault. To achieve the purpose of protecting the hardware, the fault determination time is usually in the microsecond level. After the hardware chip detects a fault, it directly closes the PWM wave, stops the output, and feeds the fault back to the vehicle. However, this fault diagnosis method cannot exclude false alarms caused by interference of the hardware chip and changes in the vehicle's 12V instantaneous supply voltage, which affects the operation of the vehicle. Therefore, how to avoid false alarms of insulated gate bipolar transistors in the motor controller has become an urgent problem to be solved.

[0003] The above content is only used to assist in understanding the technical solution of the present invention, and does not represent an admission that the above content is prior art. Summary of the Invention

[0004] The main object of the present invention is to provide a method, device, equipment and storage medium for detecting faults of insulated gate bipolar transistors, aiming to solve the technical problem of how to avoid false alarms of insulated gate bipolar transistors in the motor controller.

[0005] To achieve the above object, the present invention provides a method for detecting faults of insulated gate bipolar transistors, and the method for detecting faults of insulated gate bipolar transistors includes the following steps:

[0006] When the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated, control the timer in the motor controller to start timing;

[0007] When the timing value corresponding to the timer is greater than the preset timing value, determine that the insulated gate bipolar transistor has a fault.

[0008] Optionally, before the step of controlling the timer in the motor controller to start timing when the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated, the method further includes:

[0009] When the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the fault flag pin of the insulated gate bipolar transistor is not activated, determine that the motor controller issues a false alarm fault, and control the timer in the motor controller to start timing;

[0010] Recover the false alarm fault issued by the motor controller according to the initial timing value corresponding to the timer.

[0011] Optionally, the step of recovering the false alarm fault sent by the motor controller according to the initial timing value corresponding to the timer specifically includes:

[0012] When the initial timing value corresponding to the fault register is greater than a first preset timing value, the fault flag pin of the insulated gate bipolar transistor is activated, the current voltage value corresponding to the motor controller is greater than a first preset voltage threshold, and the motor controller does not have a third-level fault, obtain the current motor speed;

[0013] When the current motor speed is less than a preset speed threshold, recover the false alarm fault sent by the motor controller.

[0014] Optionally, before the step of determining that the motor controller sends a false alarm fault and controlling the timer in the motor controller to count when the current voltage value corresponding to the motor controller is greater than or equal to a preset voltage threshold, or the fault flag pin of the insulated gate bipolar transistor is not activated, further includes:

[0015] Obtain the hardware register value in the motor controller;

[0016] When the hardware register value is a preset register value, shield the preset insulated gate bipolar transistor fault detection algorithm.

[0017] Optionally, after the step of determining that the insulated gate bipolar transistor fails when the timing value corresponding to the timer is greater than a preset timing value, further includes:

[0018] Recover the preset insulated gate bipolar transistor fault detection algorithm and send a fault signal to the vehicle controller.

[0019] Optionally, after the step of obtaining the current motor speed when the initial timing value corresponding to the fault register is greater than a first preset timing value, the fault flag pin of the insulated gate bipolar transistor is activated, the current voltage value corresponding to the motor controller is greater than a first preset voltage threshold, and the motor controller does not have a third-level fault, further includes:

[0020] When the current motor speed is greater than or equal to a preset speed threshold, obtain the initial timing value corresponding to the fault register;

[0021] When the initial timing value is greater than a second preset timing value, recover the preset insulated gate bipolar transistor fault detection algorithm and send a fault signal to the vehicle controller.

[0022] Optionally, the step of recovering the false alarm fault issued by the motor controller when the current motor speed is less than the preset speed threshold specifically includes:

[0023] When the current motor speed is less than the preset speed threshold, control the motor to increase the output torque within a third preset time threshold to respond to the torque request of the vehicle controller.

[0024] In addition, to achieve the above object, the present invention also provides an insulated gate bipolar transistor fault detection device, and the insulated gate bipolar transistor fault detection device includes:

[0025] A timing module, configured to control a timer in the motor controller to time when the current voltage value corresponding to the motor controller is less than a preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated;

[0026] A fault detection module, configured to determine that the insulated gate bipolar transistor has a fault when the timing value corresponding to the timer is greater than a preset timing value.

[0027] In addition, to achieve the above object, the present invention also proposes an insulated gate bipolar transistor fault detection device, and the insulated gate bipolar transistor fault detection device includes: a memory, a processor, and an insulated gate bipolar transistor fault detection program stored on the memory and executable on the processor, and the insulated gate bipolar transistor fault detection program is configured to implement the steps of the insulated gate bipolar transistor fault detection method as described above.

[0028] In addition, to achieve the above object, the present invention also proposes a storage medium, and an insulated gate bipolar transistor fault detection program is stored on the storage medium, and when the insulated gate bipolar transistor fault detection program is executed by a processor, the steps of the insulated gate bipolar transistor fault detection method as described above are implemented.

[0029] When the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated, the present invention controls a timer in the motor controller to start timing; when the timing value corresponding to the timer is greater than the preset timing value, it is determined that the insulated gate bipolar transistor has a fault. When the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated, the present invention controls the timer to start timing. Compared with the existing hardware chip that directly feeds back a fault when detecting that the fault flag pin of the insulated gate bipolar transistor is activated, the above method of the present invention can jointly determine whether the motor controller misreports a fault of the insulated gate bipolar transistor based on the current voltage value corresponding to the motor controller and whether the fault flag pin of the insulated gate bipolar transistor is activated, and when the timing value corresponding to the timer is greater than the preset timing value, it is determined that the insulated gate bipolar transistor has a fault, thereby avoiding the motor controller from misreporting a fault of the insulated gate bipolar transistor. Brief Description of the Drawings

[0030] Figure 1 is a schematic structural diagram of an insulated gate bipolar transistor fault detection device in the hardware operating environment related to the solution of the embodiment of the present invention;

[0031] Figure 2 is a schematic flowchart of the first embodiment of the insulated gate bipolar transistor fault detection method of the present invention;

[0032] Figure 3 is a schematic flowchart of the second embodiment of the insulated gate bipolar transistor fault detection method of the present invention;

[0033] Figure 4 is a schematic flowchart of the third embodiment of the insulated gate bipolar transistor fault detection method of the present invention;

[0034] Figure 5 is a structural block diagram of the first embodiment of the insulated gate bipolar transistor fault detection device of the present invention.

[0035] The implementation, functional features and advantages of the object of the present invention will be further described with reference to the embodiments and the accompanying drawings. Detailed Description of the Embodiments

[0036] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0037] Refer to Figure 1 , Figure 1 is a schematic structural diagram of an insulated gate bipolar transistor fault detection device in the hardware operating environment related to the solution of the embodiment of the present invention.

[0038] Such as Figure 1As shown in the figure, the insulated gate bipolar transistor (IGBT) fault detection device may include: a processor 1001, such as a Central Processing Unit (CPU), a communication bus 1002, a user interface 1003, a network interface 1004, and a memory 1005. Among them, the communication bus 1002 is used to enable connection and communication between these components. The user interface 1003 may include a display screen and an input unit such as a keyboard. Optionally, the user interface 1003 may further include a standard wired interface and a wireless interface. The network interface 1004 may optionally include a standard wired interface and a wireless interface (such as a Wireless-Fidelity (Wi-Fi) interface). The memory 1005 may be a high-speed Random Access Memory (RAM) or a stable Non-Volatile Memory (NVM), such as a disk memory. Optionally, the memory 1005 may also be a storage device independent of the aforementioned processor 1001.

[0039] Those skilled in the art can understand that Figure 1 the structure shown in the figure does not constitute a limitation on the IGBT fault detection device, and it may include more or fewer components than shown, or combine some components, or have different component arrangements.

[0040] As Figure 1 shown, the memory 1005, as a storage medium, may include an operating system, a network communication module, a user interface module, and an IGBT fault detection program.

[0041] In Figure 1 the IGBT fault detection device shown in the figure, the network interface 1004 is mainly used for data communication with a network server; the user interface 1003 is mainly used for data interaction with users; the processor 1001 and the memory 1005 in the IGBT fault detection device of the present invention may be disposed in the IGBT fault detection device. The IGBT fault detection device calls the IGBT fault detection program stored in the memory 1005 through the processor 1001 and executes the IGBT fault detection method provided by the embodiments of the present invention.

[0042] Based on the above IGBT fault detection device, the embodiments of the present invention provide an IGBT fault detection method. Referring to Figure 2 , Figure 2 which is a schematic flowchart of the first embodiment of the IGBT fault detection method of the present invention.

[0043] In this embodiment, the method for detecting the failure of an insulated gate bipolar transistor includes the following steps:

[0044] Step S10: When the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated, control the timer in the motor controller to start timing;

[0045] It should be noted that the execution subject of this embodiment can be a motor controller, or an electronic device or an insulated gate bipolar transistor fault detection device capable of implementing the above functions. Hereinafter, taking the insulated gate bipolar transistor fault detection device as an example, this embodiment and the following embodiments will be described.

[0046] It can be understood that an IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of a BJT (Bipolar Junction Transistor) and a MOS (Insulated Gate Field Effect Transistor), and has the advantages of both the high input impedance of the MOSFET and the low on-state voltage drop of the GTR. The insulated gate bipolar transistor in this embodiment is located inside the motor controller.

[0047] It should be understood that the preset voltage threshold is a voltage threshold set in advance, for example: 9V, 10V, etc., and this embodiment does not make specific limitations on this.

[0048] In specific implementation, the current voltage value corresponding to the motor controller refers to the voltage value input to the motor controller at the current moment. Whether the fault flag pin of the insulated gate bipolar transistor is activated can be obtained through the corresponding internal flag bit, that is, when there is a fault in the fault pin of the IGBT upper tube and / or lower tube, when the current voltage value is less than the preset voltage threshold and there is a fault in the fault pin of the IGBT upper tube and / or lower tube, the fault flag bit can be set to 1, that is, MdFaultFlag = 1 and the fault register is incremented (Fault_cnt++), and the timer (cnt) starts timing.

[0049] Step S20: When the timing value corresponding to the timer is greater than the preset timing value, determine that the insulated gate bipolar transistor has failed.

[0050] It should be noted that the preset timing value can be set according to actual situations, for example: 10 microseconds, 20 microseconds, etc., and this embodiment does not make specific limitations on this.

[0051] In specific implementation, when the timing value corresponding to the timer is greater than the preset timing value, it is determined that the IGBT has a real failure, rather than a failure caused by interference to the motor controller.

[0052] In this embodiment, when the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated, the timer in the motor controller is controlled to start timing; when the timing value corresponding to the timer is greater than the preset timing value, it is determined that the insulated gate bipolar transistor has failed. In this embodiment, the timer is controlled to start timing only when the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated. Compared with the existing hardware chip that directly feeds back a fault when detecting that the fault flag pin of the insulated gate bipolar transistor is activated, the above method in this embodiment can jointly determine whether the motor controller misreports a fault of the insulated gate bipolar transistor based on the current voltage value corresponding to the motor controller and whether the fault flag pin of the insulated gate bipolar transistor is activated, and when the timing value corresponding to the timer is greater than the preset timing value, it is determined that the insulated gate bipolar transistor has failed, thereby avoiding the motor controller from misreporting a fault of the insulated gate bipolar transistor.

[0053] Reference Figure 3 , Figure 3 is a schematic flowchart of the second embodiment of the method for detecting a fault of an insulated gate bipolar transistor according to the present invention.

[0054] Based on the above first embodiment, in this embodiment, before the step S10, the following is further included:

[0055] Step S01: When the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the fault flag pin of the insulated gate bipolar transistor is not activated, it is determined that the motor controller issues a false fault report, and the timer in the motor controller is controlled to start timing;

[0056] It can be understood that when the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the fault flag pin of the insulated gate bipolar transistor is not activated, that is, when the fault pins of the upper and / or lower IGBTs do not fail, it is determined that the motor controller is interfered and issues a fault at this time, that is, the motor controller issues a false fault report.

[0057] In specific implementation, after the motor controller issues a false fault report, it is also necessary to control the timer to start timing.

[0058] Further, in this embodiment, before the step S01, the following is further included: obtaining the hardware register value in the motor controller; when the hardware register value is the preset register value, masking the preset insulated gate bipolar transistor fault detection algorithm.

[0059] It should be noted that the preset register value in this embodiment is 1, and the hardware register value being the preset register value is equivalent to setting the hardware register value.

[0060] It should be understood that after the hardware chip in the motor controller detects an IGBT fault, it will set the value of the hardware register to 1. After the software detects that the value of the hardware register is set, it determines that an IGBT fault has occurred. However, at this time, it cannot be determined whether there is a false alarm fault in the motor controller, so the fault flag bit in the software cannot be set.

[0061] In specific implementation, after the software detects that the value of the hardware register is set, it is necessary to mask the IGBT fault detection, that is, it is necessary to mask the preset insulated gate bipolar transistor fault detection algorithm. The above-mentioned preset insulated gate bipolar transistor fault detection algorithm is a pre-set IGBT fault detection algorithm, which can be specifically referred to the prior art, and this embodiment will not elaborate too much on this, and it is also necessary to clear the count of the fault register.

[0062] Step S02: Recover the false alarm fault sent by the motor controller according to the initial timing value corresponding to the timer.

[0063] It can be understood that the initial timing value refers to the timing value obtained by the timer after the motor controller sends a false alarm fault. In this embodiment, the false alarm fault sent by the motor controller is recovered according to the initial timing value.

[0064] Furthermore, in order to implement fault handling for IGBT faults, in this embodiment, after the step S20, it further includes: recovering the preset insulated gate bipolar transistor fault detection algorithm and sending the fault signal to the vehicle controller.

[0065] In specific implementation, after an IGBT has a real fault, at this time, the preset insulated gate bipolar transistor fault detection algorithm can be recovered, the fault flag bit in the software can be set, and the fault signal can be sent to the vehicle controller through the CAN network to handle the IGBT fault.

[0066] In this embodiment, when the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the fault flag pin of the insulated gate bipolar transistor is not activated, it is determined that the motor controller sends a false alarm fault, and the timer in the motor controller is controlled to time, and the false alarm fault sent by the motor controller is recovered according to the initial timing value corresponding to the timer. In this embodiment, when the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the fault flag pin of the insulated gate bipolar transistor is not activated, it is determined that the motor controller sends a false alarm fault, so that the real fault or false alarm fault of the IGBT can be distinguished, and further, the false alarm fault can be recovered according to the initial timing value corresponding to the timer.

[0067] Reference Figure 4 , Figure 4It is a schematic flowchart of the third embodiment of the fault detection method for the insulated gate bipolar transistor of the present invention.

[0068] Based on the above embodiments, in this embodiment, the step S02 includes:

[0069] Step S021: When the initial timing value corresponding to the fault register is greater than the first preset timing value, and the fault table pin of the insulated gate bipolar transistor is activated, and the current voltage value corresponding to the motor controller is greater than the first preset voltage threshold, and the motor controller does not have a three - level fault, obtain the current motor speed;

[0070] It can be understood that the three - level fault may include resolver faults, etc., and this embodiment does not make specific limitations on this. The first preset voltage threshold is a preset voltage threshold, for example: 9V, 10V, etc., and this embodiment does not make specific limitations on this.

[0071] In specific implementation, when the initial timing value corresponding to the fault register is greater than the first preset timing value, and the fault flag pin of the insulated gate bipolar transistor is activated, and the current voltage value corresponding to the motor controller is greater than the first preset voltage threshold, and the motor controller does not have a three - level fault, obtain the current motor speed.

[0072] Further, in this embodiment, after the step S021, it further includes: when the current motor speed is greater than or equal to the preset speed threshold, obtain the initial timing value corresponding to the fault register; when the initial timing value is greater than the second preset timing value, restore the preset insulated gate bipolar transistor fault detection algorithm, and send a fault signal to the vehicle controller.

[0073] It should be noted that the preset speed threshold is a preset speed threshold, which can be specifically set according to actual situations, and this embodiment does not make specific limitations on this.

[0074] In specific implementation, when the current motor speed is greater than or equal to the preset speed threshold, obtain the initial timing value corresponding to the fault register, and when the initial timing value is greater than the second preset timing value, at this time, the preset insulated gate bipolar transistor fault detection algorithm can be restored, and the fault flag bit in the software can be set, and the fault signal is sent to the vehicle controller through the CAN network to process the IGBT fault.

[0075] Step S022: When the current motor speed is less than the preset speed threshold, restore the false alarm fault issued by the motor controller.

[0076] It should be understood that when the current motor speed is less than the preset speed threshold, it is necessary to restore the false alarm fault issued by the motor controller.

[0077] Further, in order to accurately recover from the false alarm faults issued by the motor controller, in this embodiment, step S022 includes: when the current motor speed is less than a preset speed threshold, controlling the motor output torque to increase within a third preset time threshold to respond to the torque request of the vehicle controller.

[0078] It should be noted that the third preset time threshold is a preset time threshold, which can be specifically set according to actual conditions, and this embodiment does not make specific limitations on this.

[0079] It can be understood that when the current motor speed is less than the preset speed threshold, relevant variables in the preset insulated gate bipolar transistor fault detection algorithm will be reset, and the motor output torque will be set to 0. The fault flag bit of the hardware fault register will also be cleared, and the PWM wave transmission will be restored. Moreover, the motor output torque will be increased within the third preset time threshold, that is, increased from 0 to the required torque, so as to respond to the torque request of the vehicle controller, and the required torque is included in the torque request of the vehicle controller.

[0080] In this embodiment, when the initial timing value corresponding to the fault register is greater than the first preset timing value, and the fault flag pin of the insulated gate bipolar transistor is activated, and the current voltage value corresponding to the motor controller is greater than the first preset voltage threshold, and the motor controller does not have a third-level fault, the current motor speed is obtained. Then, when the current motor speed is less than the preset speed threshold, the false alarm faults issued by the motor controller are recovered. In this embodiment, when the initial timing value corresponding to the fault register is greater than the first preset timing value, and the fault flag pin of the insulated gate bipolar transistor is activated, and the current voltage value corresponding to the motor controller is greater than the first preset voltage threshold, and the motor controller does not have a third-level fault, the false alarm faults issued by the motor controller will be recovered, and further the torque request of the vehicle controller will be responded to.

[0081] Refer to Figure 5 , Figure 5 which is the structural block diagram of the first embodiment of the insulated gate bipolar transistor fault detection device of the present invention.

[0082] As Figure 5 shown, the insulated gate bipolar transistor fault detection device proposed in the embodiment of the present invention includes:

[0083] A timing module 10, configured to control the timer in the motor controller to time when the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated;

[0084] A fault detection module 20, configured to determine that the insulated gate bipolar transistor has a fault when the timing value corresponding to the timer is greater than the preset timing value.

[0085] In this embodiment, when the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated, the timer in the motor controller is controlled to start timing; when the timing value corresponding to the timer is greater than the preset timing value, it is determined that the insulated gate bipolar transistor has a fault. In this embodiment, the timer is controlled to start timing only when the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated. Compared with the existing hardware chip that directly feeds back a fault when detecting that the fault flag pin of the insulated gate bipolar transistor is activated, the above method in this embodiment can jointly determine whether the motor controller reports a false fault of the insulated gate bipolar transistor based on the current voltage value corresponding to the motor controller and whether the fault flag pin of the insulated gate bipolar transistor is activated, and when the timing value corresponding to the timer is greater than the preset timing value, it is determined that the insulated gate bipolar transistor has a fault, thereby avoiding false alarms of the motor controller for the insulated gate bipolar transistor having a fault.

[0086] It should be noted that the above-described work process is only illustrative and does not limit the protection scope of the present invention. In actual applications, those skilled in the art can select some or all of them according to actual needs to achieve the purpose of the solution of this embodiment, and no limitation is made here.

[0087] In addition, for the technical details not described in detail in this embodiment, reference can be made to the insulated gate bipolar transistor fault detection method provided in any embodiment of the present invention, which will not be elaborated here.

[0088] Based on the first embodiment of the insulated gate bipolar transistor fault detection device of the present invention, a second embodiment of the insulated gate bipolar transistor fault detection device of the present invention is proposed.

[0089] In this embodiment, the fault detection module 20 is further configured to determine that the motor controller issues a false fault when the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the fault flag pin of the insulated gate bipolar transistor is not activated, and control the timer in the motor controller to start timing; and recover the false fault issued by the motor controller according to the initial timing value corresponding to the timer.

[0090] Further, the fault detection module 20 is further configured to obtain the current motor speed when the initial timing value corresponding to the fault register is greater than the first preset timing value, the fault flag pin of the insulated gate bipolar transistor is activated, the current voltage value corresponding to the motor controller is greater than the first preset voltage threshold, and the motor controller does not have a three-level fault; and recover the false fault issued by the motor controller when the current motor speed is less than the preset speed threshold.

[0091] Further, the fault detection module 20 is further configured to obtain the hardware register value in the motor controller; when the hardware register value is a preset register value, mask the preset insulated gate bipolar transistor fault detection algorithm.

[0092] Further, the fault detection module 20 is further configured to restore the preset insulated gate bipolar transistor fault detection algorithm and send a fault signal to the vehicle controller.

[0093] Further, the fault detection module 20 is further configured to obtain the initial timing value corresponding to the fault register when the current motor speed is greater than or equal to a preset speed threshold; when the initial timing value is greater than a second preset timing value, restore the preset insulated gate bipolar transistor fault detection algorithm and send a fault signal to the vehicle controller.

[0094] Further, the fault detection module 20 is further configured to control the motor to increase the output torque within a third preset time threshold when the current motor speed is less than the preset speed threshold to respond to the torque request of the vehicle controller.

[0095] Other embodiments or specific implementation manners of the insulated gate bipolar transistor fault detection device of the present invention may refer to the above method embodiments, which will not be elaborated herein.

[0096] In addition, an embodiment of the present invention further provides a storage medium, on which an insulated gate bipolar transistor fault detection program is stored. When the insulated gate bipolar transistor fault detection program is executed by a processor, the steps of the insulated gate bipolar transistor fault detection method as described above are implemented.

[0097] It should be noted that in this article, the terms "include", "comprise" or any other variant thereof are intended to cover a non-exclusive inclusion, so that a process, method, article or system including a series of elements not only includes those elements but also includes other elements not explicitly listed, or further includes elements inherent to such a process, method, article or system. Without further limitations, an element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or system including the element.

[0098] The serial numbers of the above embodiments of the present invention are only for description and do not represent the advantages and disadvantages of the embodiments.

[0099] Through the description of the above embodiments, those skilled in the art can clearly understand that the above-described embodiment methods can be implemented by means of software plus a necessary general hardware platform. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as a read-only memory / random access memory, magnetic disk, optical disk), and includes several instructions for causing a terminal device (which can be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of the present invention.

[0100] The above are only the preferred embodiments of the present invention, and do not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present invention.

Claims

1. A method for detecting faults in an insulated gate bipolar transistor, characterized in that, The method for detecting the failure of an insulated gate bipolar transistor includes the following steps: When the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the failure flag pin of the insulated gate bipolar transistor is activated, control the timer in the motor controller to start timing; When the timing value corresponding to the timer is greater than the preset timing value, determine that the insulated gate bipolar transistor has failed; Before the step of controlling the timer in the motor controller to start timing when the current voltage value corresponding to the motor controller is less than the preset voltage threshold and the failure flag pin of the insulated gate bipolar transistor is activated, it further includes: When the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the failure flag pin of the insulated gate bipolar transistor is not activated, determine that the motor controller issues a false alarm of failure, and control the timer in the motor controller to start timing; Recover the false alarm of failure issued by the motor controller according to the initial timing value corresponding to the timer.

2. The insulation gate bipolar transistor fault detection method according to claim 1, characterized in that, The step of recovering the false alarm of failure issued by the motor controller according to the initial timing value corresponding to the timer specifically includes: When the initial timing value corresponding to the failure register is greater than the first preset timing value, the failure flag pin of the insulated gate bipolar transistor is activated, the current voltage value corresponding to the motor controller is greater than the first preset voltage threshold, and the motor controller does not have a third-level failure, obtain the current motor speed; When the current motor speed is less than the preset speed threshold, recover the false alarm of failure issued by the motor controller.

3. The insulation gate bipolar transistor fault detection method according to claim 1 or 2, characterized in that, Before the step of determining that the motor controller issues a false alarm of failure and controlling the timer in the motor controller to start timing when the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the failure flag pin of the insulated gate bipolar transistor is not activated, it further includes: Obtain the hardware register value in the motor controller; When the hardware register value is the preset register value, mask the preset insulated gate bipolar transistor failure detection algorithm.

4. The insulation gate bipolar transistor fault detection method according to claim 3, characterized in that, After the step of determining that the insulated gate bipolar transistor has failed when the timing value corresponding to the timer is greater than the preset timing value, it further includes: Recover the preset insulated gate bipolar transistor failure detection algorithm and send a failure signal to the vehicle controller.

5. The insulation gate bipolar transistor fault detection method according to claim 4, characterized in that After the step of obtaining the current motor speed when the initial timing value corresponding to the failure register is greater than the first preset timing value, the failure flag pin of the insulated gate bipolar transistor is activated, the current voltage value corresponding to the motor controller is greater than the first preset voltage threshold, and the motor controller does not have a third-level failure, it further includes: When the current motor speed is greater than or equal to the preset speed threshold, obtain the initial timing value corresponding to the failure register; When the initial timing value is greater than the second preset timing value, recover the preset insulated gate bipolar transistor failure detection algorithm and send a failure signal to the vehicle controller.

6. The insulation gate bipolar transistor fault detection method according to claim 4, characterized in that The step of recovering the false alarm fault sent by the motor controller when the current motor speed is less than the preset speed threshold specifically includes: When the current motor speed is less than the preset speed threshold, controlling the motor to increase the output torque within a third preset time threshold to respond to the torque request of the vehicle controller.

7. An insulated gate bipolar transistor fault detection device, characterized in that, The insulated gate bipolar transistor fault detection device includes: A timing module, configured to control a timer in the motor controller to start timing when the current voltage value corresponding to the motor controller is less than a preset voltage threshold and the fault flag pin of the insulated gate bipolar transistor is activated; A fault detection module, configured to determine that the insulated gate bipolar transistor has a fault when the timing value corresponding to the timer is greater than a preset timing value; The timing module is further configured to determine that the motor controller issues a false alarm fault when the current voltage value corresponding to the motor controller is greater than or equal to the preset voltage threshold, or the fault flag pin of the insulated gate bipolar transistor is not activated, and control the timer in the motor controller to start timing; recovering the false alarm fault sent by the motor controller according to the initial timing value corresponding to the timer.

8. An insulated gate bipolar transistor fault detection device, characterized in that The device includes: a memory, a processor, and an insulated gate bipolar transistor fault detection program stored on the memory and executable on the processor, the insulated gate bipolar transistor fault detection program being configured to implement the steps of the insulated gate bipolar transistor fault detection method according to any one of claims 1 to 6.

9. A storage medium, characterized in that, An insulated gate bipolar transistor fault detection program is stored on the storage medium, and when the insulated gate bipolar transistor fault detection program is executed by a processor, the steps of the insulated gate bipolar transistor fault detection method according to any one of claims 1 to 6 are implemented.

Citation Information

Patent Citations

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    CN110865275A