Substrate processing equipment and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having a processing space; a support unit positioned within the processing space and supporting a substrate; and a plasma generating unit for generating plasma from a process gas supplied to the processing space. The plasma generating unit includes: a first electrode and a second electrode facing the first electrode, the second electrode being made of a material capable of transmitting electromagnetic waves.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2021-0027367, filed on March 2, 2021, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the inventive concepts described herein relate to an apparatus for processing a substrate and a method of processing the substrate using plasma. Background Art

[0004] During semiconductor device manufacturing, desired patterns are formed on a substrate through various processes, including photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning. Among them, etching selectively removes at least a portion of a film formed on a substrate, and both wet and dry etching methods are used.

[0005] Among them, an etching device using plasma is used for dry etching. Generally, in order to form plasma, an electromagnetic field is generated in the inner space of a chamber, and the electromagnetic field excites a process gas provided in the chamber into a plasma state.

[0006] Plasma refers to an ionized gas state containing ions, electrons, and free radicals. Plasma is generated by extremely high temperatures and strong electric or RF electromagnetic fields. In semiconductor device manufacturing, plasma is used for etching.

[0007] In a method of raising the temperature of a substrate in a substrate processing apparatus using plasma, the temperature of the substrate is raised by using a heating device (heating wire) of a substrate supporting member on which the substrate is placed.

[0008] However, in the substrate heating method using a heater wire, it takes a long time to increase the temperature of the substrate, and it is difficult to uniformly heat the entire substrate. Summary of the Invention

[0009] Embodiments of the inventive concept provide a substrate treating apparatus and a substrate treating method for rapidly heating a substrate in a substrate treating process using plasma.

[0010] Embodiments of the inventive concept also provide a substrate processing apparatus and a substrate processing method for conveniently replacing a heating source and controlling the temperature of a substrate.

[0011] The technical objectives of the present invention are not limited to the above-mentioned objectives, and those skilled in the art will clearly understand other unmentioned technical objectives through the following description.

[0012] The present invention provides a substrate processing apparatus. The apparatus includes a chamber having a processing space; a support unit disposed within the processing space and supporting a substrate; and a plasma generating unit for generating plasma from a process gas supplied to the processing space. The plasma generating unit includes a first electrode and a second electrode facing the first electrode, the second electrode being made of a material capable of transmitting electromagnetic waves.

[0013] In an embodiment, the substrate processing apparatus includes a heating unit for heating the substrate.

[0014] In an embodiment, the heating unit comprises a heating device using heat radiation.

[0015] In an embodiment, the heating device is any one of an IR lamp, a flash lamp, a laser or a microwave.

[0016] In an embodiment, the second electrode is disposed at a top wall of the chamber, the heating unit is disposed above the top wall of the chamber, and the top wall is made of a material capable of transmitting electromagnetic waves.

[0017] In an embodiment, the second electrode is provided as a showerhead type having a through hole for supplying a reaction gas to the substrate placed on the supporting unit.

[0018] In an embodiment, the second electrode is made of any one of indium tin oxide (ITO), manganese oxide (MnO), zinc oxide (ZnO), indium zinc oxide (IZO), FTO, AZO, graphene, carbon nanotube (CNT), metal nanowire or PEDOT-PSS.

[0019] The present invention provides a substrate processing apparatus comprising: a chamber for performing a plasma reaction process; a support unit disposed at the bottom of the chamber and holding a substrate thereon and comprising a first electrode; a second electrode disposed at the top of the chamber and configured to generate an electric field for the plasma reaction process within the chamber; and a power supply device configured to apply RF power to the second electrode and / or the first electrode to generate an electric field between the second electrode and the first electrode, wherein the second electrode is made of a material capable of transmitting electromagnetic waves.

[0020] In an embodiment, the substrate processing apparatus further includes a heating unit for heating the substrate.

[0021] In an embodiment, the heating unit comprises a heating device using heat radiation.

[0022] In an embodiment, the heating device is any one of an IR lamp, a flash lamp, a laser or a microwave.

[0023] In an embodiment, the second electrode is disposed at a top wall of the chamber, and the heating unit is disposed above the top wall of the chamber.

[0024] In an embodiment, the top wall is made of a material capable of transmitting electromagnetic waves.

[0025] In an embodiment, the second electrode is made of any one of indium tin oxide (ITO), manganese oxide (MnO), zinc oxide (ZnO), indium zinc oxide (IZO), FTO, AZO, graphene, carbon nanotubes (CNTs), metal nanowires, or PEDOT-PSS.

[0026] In an embodiment, the second electrode is provided as a showerhead type having a through hole for supplying a reaction gas to the substrate placed on the supporting unit.

[0027] The present invention provides a substrate processing apparatus. The apparatus includes: a chamber having a top wall with a transparent window and providing a plasma processing space; an electrostatic chuck disposed at the bottom side of the plasma processing space, electrostatically chucked to chuck a substrate and serving as a bottom electrode; a showerhead located below the transparent window in the top wall and above the electrostatic chuck, having a through hole for supplying a reactive gas to the substrate placed on the electrostatic chuck and serving as a top electrode; and a heating unit disposed above the transparent window in the top wall and providing light energy for heating the substrate, wherein the showerhead is made of a material capable of transmitting electromagnetic waves provided by the heating unit.

[0028] In an embodiment, the showerhead is made of any one of indium tin oxide (ITO), manganese oxide (MnO), zinc oxide (ZnO), indium zinc oxide (IZO), FTO, AZO, graphene, carbon nanotubes (CNTs), metal nanowires, or PEDOT-PSS.

[0029] In an embodiment, the heating device is any one of an IR lamp, a flash lamp, a laser or a microwave.

[0030] In an embodiment, the substrate processing apparatus further includes a power supply device for applying RF power to the electrostatic chuck and / or the showerhead to generate an electric field therebetween.

[0031] The present invention provides a substrate processing method in a substrate processing apparatus. The apparatus includes a top electrode and a bottom electrode facing each other in a processing chamber, and the method comprises heating a substrate disposed in the processing chamber using a heating unit adjacent to the top electrode, wherein the top electrode is disposed below and on the top side of a top wall of the processing chamber, and the top wall and the top electrode are made of a material capable of transmitting electromagnetic waves, so that the electromagnetic waves emitted from the heating unit pass through the top wall and the top electrode to heat the substrate below the top electrode and above the bottom electrode.

[0032] According to embodiments of the inventive concept, a substrate may be quickly heated using thermal radiation.

[0033] According to an embodiment of the inventive concept, it is convenient to replace a heating source and control the temperature of a substrate.

[0034] The effects of the present invention are not limited to the above-mentioned effects, and those skilled in the art will clearly understand other unmentioned effects through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, in which like reference numerals refer to like parts throughout the various drawings unless otherwise specified.

[0036] Figure 1 FIG. 1 is a view illustrating a substrate treating apparatus according to an embodiment of the inventive concept.

[0037] Figure 2 is a view illustrating another substrate treating apparatus according to an embodiment of the inventive concept.

[0038] Figure 3 To show Figure 2 View of the heating unit.

[0039] List of Reference Numerals

[0040] 10: Substrate processing equipment

[0041] 10a: Substrate processing equipment

[0042] 100: Processing chamber

[0043] 100a: Processing chamber

[0044] 103: Exhaust hole

[0045] 104: Opening

[0046] 110: Top wall

[0047] 120: Transparent window

[0048] 121: Exhaust pipe

[0049] 122: Pump

[0050] 130: Pad unit

[0051] 200: Support unit

[0052] 200a: Support unit

[0053] 210: Support plate

[0054] 211: Exhaust pipe

[0055] 220: Base

[0056] 240: Electrostatic chuck

[0057] 260: Ring assembly

[0058] 262: Focus ring

[0059] 264: Insulation ring

[0060] 270: Gas supply pipeline unit

[0061] 272: Gas supply source

[0062] 274: Gas supply pipeline

[0063] 282: Heating component

[0064] 284: Cooling component

[0065] 300a: Gas supply unit

[0066] 310: Gas storage unit

[0067] 320: Gas supply pipeline

[0068] 322: Valve

[0069] 330: Gas inlet

[0070] 400: Plasma generation unit

[0071] 400a: Plasma generation unit

[0072] 420: First electrode / top electrode

[0073] 422: Nozzle

[0074] 422a: hole

[0075] 424: Ring Assembly

[0076] 429: Grounding

[0077] 440: Second electrode / bottom electrode

[0078] 460: High-frequency power supply

[0079] 500: Heating unit

[0080] 500a: Heating unit

[0081] 502: Shell

[0082] 510: IR light

[0083] 520: Reflector

[0084] W: substrate DETAILED DESCRIPTION

[0085] The present invention is susceptible to various modifications and forms, and specific embodiments of the present invention will be shown in the drawings and described in detail. However, the embodiments according to the present invention are not intended to limit the specific disclosed forms, and it should be understood that the present invention includes all variations, equivalents, and substitutions within the spirit and technical scope of the present invention. In the description of the present invention, detailed descriptions of related known technologies may be omitted when this may obscure the essence of the present invention.

[0086] It should be understood that although the terms first, second, third, etc. may be used herein to describe various components, regions, layers, or portions, the components, regions, layers, or portions are not limited by these terms. Instead, these terms are used only to distinguish one component, region, layer, or portion from another region, layer, or portion. Thus, a first component, region, layer, or portion discussed below could be referred to as a second component, region, layer, or portion without departing from the teachings of the illustrative embodiments.

[0087] In the embodiments of the present invention, a substrate processing apparatus for etching a substrate using plasma will be described. However, the technical features of the present invention are not limited thereto and can be applied to various apparatuses for processing a substrate W using plasma. The present invention can be applied to any apparatus that performs any processing on a substrate supported by a support unit.

[0088] In addition, in the embodiment of the present inventive concept, an electrostatic chuck is described as an example of a supporting unit. However, the present inventive concept is not limited thereto, and the supporting unit may support the substrate by mechanical clamping or vacuum.

[0089] Figure 1 FIG. 1 is a view illustrating a substrate treating apparatus according to an embodiment of the inventive concept.

[0090] See Figure 1The substrate processing apparatus 10 may include a processing chamber 100, a supporting unit 200, a plasma generating unit 400, and a heating unit 500. The substrate processing apparatus processes a substrate W using plasma.

[0091] The process chamber 100 has an inner space for performing a process therein. The support unit 200 is located in a bottom area of the inner space of the process chamber 100. A substrate is placed on the support unit 200.

[0092] The plasma generating unit 400 generates plasma from the process gas above the support unit 200 in the processing chamber 100. The plasma generating unit 400 may include a first electrode 420, a second electrode 440, and a high-frequency power supply 460. The first electrode 420 and the second electrode 440 may be disposed so as to face each other in the up / down direction. The second electrode 440 may be disposed in the support unit 200. In other words, the support unit 200 may function as an electrode.

[0093] The first electrode 420 can be made of a material capable of transmitting electromagnetic waves. More specifically, the first electrode 420 can be a transparent electrode through which light energy provided by the heating unit 500 can pass and reach and heat the substrate. In one embodiment, the first electrode 420 can be a transparent electrode formed of an indium tin oxide (ITO) material composed of indium oxide and tin oxide. In another embodiment, the first electrode can be manganese oxide (MnO), zinc oxide (ZnO), indium zinc oxide (IZO), FTO, AZO, graphene, carbon nanotubes (CNTs), metal nanowires, or any of metal nanowires and PEDOT-PSS.

[0094] The first electrode 420 may be located below the transparent window 120 provided in the top wall 110 of the process chamber 100 .

[0095] According to an embodiment, the first electrode 420 may be connected to the ground 429, and the high-frequency power supply 460 may be connected to the second electrode 440. Alternatively, the high-frequency power supply 460 may be connected to the first electrode 420, and the second electrode 440 may be connected to the ground. In other embodiments, the high-frequency power supply 460 may be connected to both the first electrode 420 and the second electrode 440.

[0096] The heating unit 500 may be disposed above the transparent window 120. The heating unit 500 may be a heating device that utilizes thermal radiation. In one embodiment, the heating unit may include an IR lamp. In another embodiment, the heating unit may be any heat source, such as a flash lamp, a laser, or a microwave. The heating unit 500 emits light energy, which passes through the transparent window 120 and the first electrode 420 and reaches and heats the substrate W supported by the second electrode 440. As a result, the substrate can be rapidly heated by the light energy.

[0097] In this embodiment, the heating unit 500 is shown as being disposed outside the processing chamber, but the present invention is not limited thereto. In an embodiment, the heating unit 500 may be disposed below the second electrode within the processing chamber. In this case, the second electrode may be provided with a transparent material so that light energy from the heating unit 500 can pass through the second electrode to reach and heat the substrate W.

[0098] When a plasma treatment process is performed in the substrate processing apparatus 10 having the above-described configuration, the substrate can be quickly heated by the heating unit 500. In this manner, by providing the first electrode 420 as a transparent electrode (a material capable of transmitting electromagnetic waves such as light energy), the heating unit 500 for heating the substrate can be provided outside the processing chamber 100. Furthermore, since the heating unit 500 is provided outside the processing chamber 100, maintenance of the heating unit 500 (such as lamp replacement, output capacity change, etc.) can be facilitated, and damage caused by plasma can be prevented.

[0099] Figure 2 FIG. 1 is a view illustrating a substrate treating apparatus 10 a according to another embodiment of the inventive concept.

[0100] See Figure 2 The substrate processing apparatus 10a may include a processing chamber 100a, a support unit 200a, a gas supply unit 300a, a plasma generating unit 400a, and a heating unit 500a. The substrate processing apparatus processes a substrate W using plasma.

[0101] The processing chamber 100a has an internal space for performing a process therein. An exhaust hole 103 is formed on the bottom wall of the processing chamber 100a. The exhaust hole 103 is connected to an exhaust line 121 equipped with a pump 122. Reaction byproducts generated during the process and gases remaining in the processing chamber 100a are discharged to the exhaust line 211 via the exhaust hole 103. Therefore, the byproducts can be discharged to the outside of the processing chamber 100a. In addition, the internal space of the processing chamber 100a is decompressed to a predetermined pressure by the exhaust process. In an embodiment, the exhaust hole 103 may be provided at a position directly connected to the through hole 158 of the pad unit 130 described later.

[0102] An opening 104 is formed on the side wall of the processing chamber 100a. The opening 104 serves as a passage for substrates to enter and exit the processing chamber 100a. The opening 104 is opened and closed by a door assembly (not shown). According to an embodiment, the door assembly (not shown) includes an outer door, an inner door, and a connecting plate. The outer door is arranged on the outer wall of the processing chamber. The inner door is arranged on the inner wall of the processing chamber. The outer door and the inner door are fixedly connected to each other by a connecting plate. The connecting plate extends from the interior of the processing chamber to the outside via the opening. A door drive moves the outer door in an up / down direction. The door drive may include a pneumatic cylinder or a motor.

[0103] The support unit 200a is located in the bottom region of the inner space of the processing chamber 100a. The support unit 200a supports the substrate W by electrostatic force. Alternatively, the support unit 200a may support the substrate W in various ways, such as mechanical clamping.

[0104] The support unit 200a may include a support plate 210, a ring assembly 260, and a gas supply line unit 270. A substrate W is placed on the support plate 210. The support plate 210 has a base 220 and an electrostatic chuck 240. The electrostatic chuck 240 supports the substrate W on the top surface using electrostatic force. The electrostatic chuck 240 is fixedly coupled to the base 220.

[0105] The ring assembly 260 is provided in a ring shape. The ring assembly 260 is provided to surround the circumference of the support plate 210. In an embodiment, the ring assembly 260 is provided to surround the circumference of the electrostatic chuck 240. The ring assembly 260 supports the edge area of the substrate W. According to an embodiment, the ring assembly 260 includes a focus ring 262 and an insulating ring 264. The focus ring 262 is provided to surround the electrostatic chuck 240 and focus the plasma on the substrate W. The insulating ring 264 is provided to surround the focus ring 262. Optionally, the ring assembly 260 may include an edge ring (not shown) provided in close contact with the circumference of the focus ring 262 to prevent the side surface of the electrostatic chuck 240 from being damaged by the plasma. Different from the above description, the structure of the ring assembly 260 may be variously changed.

[0106] The gas supply line unit 270 includes a gas supply source 272 and a gas supply line 274. The gas supply line 274 is disposed between the ring assembly 260 and the support plate 210. The gas supply line 274 supplies gas to remove foreign matter remaining on the top surface of the ring assembly 260 or in the edge area of the support plate 210. In an embodiment, the gas may be nitrogen (N2). Alternatively, other gases or detergents may be supplied. The gas supply line 274 may be formed inside the support plate 210 to connect between the focus ring 262 and the electrostatic chuck 240. Alternatively, the gas supply line 274 may be disposed inside the focus ring 262 and bend to connect between the focus ring 262 and the electrostatic chuck 240.

[0107] According to an embodiment, the electrostatic chuck 240 may be made of a ceramic material, the focus ring 262 may be made of a silicon material, and the insulating ring 264 may be made of a quartz material. A heating member 282 and a cooling member 284 for maintaining the substrate W at a processing temperature during processing may be provided in the electrostatic chuck 240 and / or the base 220. The heating member 282 may be provided as a heating wire. The cooling member 284 may be provided as a cooling line through which a refrigerant flows. According to an embodiment, the heating member 282 may be provided in the electrostatic chuck 240, and the cooling member 284 may be provided in the base 220.

[0108] The gas supply unit 300a supplies process gas into the processing chamber 100a. The gas supply unit 300a includes a gas storage unit 310, a gas supply line 320, and a gas inlet 330. The gas supply line 320 connects the gas storage unit 310 and the gas inlet 330. The gas supply line 320 supplies the process gas stored in the gas storage unit 310 to the gas inlet 330. A valve 322 for opening and closing a channel or adjusting the flow rate of a fluid flowing through the channel may be installed on the gas supply line 320.

[0109] The plasma generating unit 400a generates plasma from the process gas remaining in the discharge space. The discharge space corresponds to a portion of the inner space above the support unit 200a in the processing chamber 100a. The plasma generating unit 400 may have a capacitively coupled plasma source.

[0110] The plasma generating unit 400a may include a top electrode 420, a bottom electrode 440, and a high frequency power supplier 460. The top electrode 420 and the bottom electrode 440 may be disposed to face each other in an up / down direction.

[0111] The top electrode 420 may be a transparent electrode through which light energy provided by the heating unit 500a can pass. For example, the top electrode 420 may be a transparent electrode formed of an indium tin oxide (ITO) material composed of indium oxide and tin oxide. In another embodiment, the top electrode may be any of manganese oxide (MnO), zinc oxide (ZnO), indium zinc oxide (IZO), FTO, AZO, graphene, carbon nanotubes (CNTs), metal nanowires, or PEDOT-PSS.

[0112] The top electrode 420 may be located below the transparent window 120 provided in the top wall 110 of the processing chamber 100a. The transparent window 120 may be made of a material capable of transmitting electromagnetic waves, such as a top electrode. In an embodiment, the top electrode 420 may include a showerhead 422 and a ring assembly 424. The showerhead 422 may be positioned to face the electrostatic chuck 240 and may be provided with a diameter larger than that of the electrostatic chuck 240. The showerhead 422 may be provided as a top electrode. A plurality of holes 422a for injecting gas are formed at the showerhead 422. The ring assembly 424 may be provided to surround the showerhead 422. The ring assembly 424 may be provided to be in close contact with the showerhead 422. According to an embodiment, the showerhead 422 may be provided as a top electrode. The bottom electrode 440 may be provided within the electrostatic chuck 240.

[0113] According to an embodiment, the top electrode 420 may be connected to the ground 429, and the high-frequency power supply 460 may be connected to the bottom electrode 440. In some embodiments, the high-frequency power supply 460 may be connected to the top electrode 420, and the bottom electrode 440 may be connected to the ground. In some embodiments, the high-frequency power supply 460 may be connected to both the top electrode 420 and the bottom electrode 440. According to an embodiment, the high-frequency power supply 460 may continuously supply power to the top electrode 420 and / or the bottom electrode 440, or may apply pulsed power.

[0114] Figure 3 To show Figure 2 View of the heating unit.

[0115] See Figure 2 and Figure 3 The heating unit 500a may be disposed above the transparent window 120 to face the top electrode 420. The heating unit 500a may include a housing 502, an IR lamp 510, and a reflective cover 520. The IR lamp 510 emits light energy, and the light energy may pass through the transparent window 120 and the top electrode 420, thereby reaching and heating the substrate W. The substrate may be rapidly heated by the light energy.

[0116] For the plasma treatment in the substrate processing equipment 10a having the above configuration, when the gas supply unit 300a supplies the treatment gas, the treatment gas is ejected by the showerhead 422 in the processing chamber 100a. In this case, plasma is generated in the processing chamber 100a, and plasma treatment can be performed. In addition, when the plasma treatment process is carried out, the substrate can be quickly heated by the IR lamp 510 of the heating unit 500a. In this way, by setting the top electrode 420 as a transparent electrode, the heating unit 500a for heating the substrate can be set outside the processing chamber 100a. In addition, since the heating unit 500a is set outside the processing chamber 100a, maintenance of the heating unit 500a (replacing the lamp, changing the output capacity, etc.) can be facilitated, and damage caused by plasma can be prevented.

[0117] In this embodiment, the top electrode is described by taking a showerhead type structure as an example, but the present inventive concept is not limited thereto.

[0118] Although the etching process is performed using plasma in the embodiment, the substrate processing process is not limited thereto and can be applied to various substrate processing processes using plasma, such as a deposition process, an ashing process, and a cleaning process. In addition, in the present embodiment, the plasma generating unit is described as a structure configured as a capacitively coupled plasma source. However, differently from this, the plasma generating unit can be provided as an inductively coupled plasma (ICP). The inductively coupled plasma may include an antenna. In addition, the substrate processing apparatus may further include a plasma boundary limiting unit. The plasma boundary limiting unit may be configured, for example, in a ring shape and may be configured to surround the discharge space to suppress the escape of plasma to the outside thereof.

[0119] Effects of the present inventive concept are not limited to the above-mentioned effects, and those skilled in the art in the art to which the present inventive concept pertains can clearly understand unmentioned effects from the specification and drawings.

[0120] Although preferred embodiments of the present invention have been illustrated and described so far, the present invention is not limited to the above-mentioned specific embodiments, and it should be noted that a person skilled in the art to which the present invention is directed may implement the present invention in various ways without departing from the essence of the present invention as claimed in the scope of the invention application, and modifications should not be interpreted separately from the technical spirit or prospects of the present invention.

Claims

1. A substrate processing device, comprising: a chamber having a processing space; a supporting unit placed in the processing space and supporting a substrate; and a plasma generating unit for generating plasma from a process gas supplied to the processing space; in, The plasma generating unit comprises: a first electrode; and a second electrode, the second electrode facing the first electrode, the second electrode being made of a material capable of transmitting electromagnetic waves; The second electrode is disposed on a top wall of the chamber, a heating unit for heating the substrate is disposed above the top wall of the chamber, and the top wall is made of a material capable of transmitting electromagnetic waves; The second electrode is provided as a showerhead type having a through hole for supplying a reaction gas to the substrate placed on the supporting unit.

2. The substrate processing apparatus according to claim 1, wherein The heating unit includes a heating device using heat radiation.

3. The substrate processing apparatus according to claim 2, wherein: The heating device is any one of an IR lamp, a flash lamp, a laser, and a microwave.

4. The substrate processing apparatus according to claim 1, wherein: The second electrode is made of any one of indium tin oxide (ITO), manganese oxide (MnO), zinc oxide (ZnO), indium zinc oxide (IZO), FTO, AZO, graphene, carbon nanotube (CNT), metal nanowire, and PEDOT-PSS.

5. A substrate processing device, comprising: a chamber in which a plasma reaction process is performed; a supporting unit disposed at a bottom side of the chamber, holding a substrate on the supporting unit and comprising a first electrode; a second electrode disposed at a top side of the chamber and configured to generate an electric field for the plasma reaction process performed in the chamber; and a power supply device configured to apply RF power to the second electrode and / or the first electrode to generate an electric field between the second electrode and the first electrode; Wherein, the second electrode is made of a material capable of transmitting electromagnetic waves; The second electrode is disposed at a top wall of the chamber, a heating unit for heating the substrate is disposed above the top wall of the chamber, and the top wall is made of a material capable of transmitting electromagnetic waves; The second electrode is provided as a showerhead type having a through hole for supplying a reaction gas to the substrate placed on the supporting unit.

6. The substrate processing apparatus according to claim 5, wherein: The heating unit includes a heating device using heat radiation.

7. The substrate processing apparatus according to claim 6, wherein: The heating device is any one of an IR lamp, a flash lamp, a laser, and a microwave.

8. The substrate processing apparatus according to claim 5, wherein: The second electrode is made of any one of indium tin oxide (ITO), manganese oxide (MnO), zinc oxide (ZnO), indium zinc oxide (IZO), FTO, AZO, graphene, carbon nanotube (CNT), metal nanowire, and PEDOT-PSS.

9. A substrate processing device, comprising: a chamber having a top wall with a transparent window and providing a plasma processing space; an electrostatic chuck disposed at a bottom side of the plasma processing space, electrostatically chucks the substrate and serves as a bottom electrode; a showerhead, the showerhead being located below the transparent window of the top wall and above the electrostatic chuck, having a through hole for supplying a reaction gas to the substrate placed on the electrostatic chuck and serving as a top electrode; and a heating unit, the heating unit being placed above the transparent window of the top wall and providing light energy for heating the substrate; Wherein, the nozzle is made of a material capable of transmitting electromagnetic waves provided by the heating unit.

10. The substrate processing apparatus according to claim 9, wherein The shower head is made of any one of indium tin oxide (ITO), manganese oxide (MnO), zinc oxide (ZnO), indium zinc oxide (IZO), FTO, AZO, graphene, carbon nanotube (CNT), metal nanowire, and PEDOT-PSS.

11. The substrate processing apparatus according to claim 9, wherein The heating unit is any one of an IR lamp, a flash lamp, a laser, or a microwave. 12 . The substrate processing apparatus according to claim 9 , further comprising a power supply device for applying RF power to the electrostatic chuck and / or the showerhead to generate an electric field therebetween.

13. A method for processing a substrate in a substrate processing apparatus, the substrate processing apparatus comprising a top electrode and a bottom electrode facing each other in a processing chamber, the method comprising the following steps: A substrate disposed in the processing chamber is heated using a heating unit adjacent to the top electrode, wherein the top electrode is disposed below a top wall of the processing chamber and on a top side of the processing chamber, and the top wall and the top electrode are made of a material capable of transmitting electromagnetic waves, so that the electromagnetic waves emitted from the heating unit pass through the top wall and the top electrode to heat the substrate located below the top electrode and above the bottom electrode.

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