A gallium nitride reflective single-pole eight-throw switch

Abstract

The application discloses a gallium nitride reflective single-pole eight-throw switch, which comprises an input end, an input capacitor, a first microstrip transmission line and eight branches, each branch comprising a second microstrip transmission line, a third microstrip transmission line, a gallium nitride HEMT, a control voltage signal end, an isolation resistor, an output capacitor, a direct-current isolation capacitor, an output end and a first node; wherein one end of the first microstrip transmission line is connected to the input end through the input capacitor, and the other end is connected to the second microstrip transmission line; the second microstrip transmission line is connected in series with the third microstrip transmission line and the output capacitor, and the output capacitor is connected to the output end; the first node is located between the second microstrip transmission line and the third microstrip transmission line; the drain electrode of the gallium nitride HEMT is connected to the first node; the gate electrode is connected to the control voltage signal end through the isolation resistor; and the source electrode is grounded through the direct-current isolation capacitor. The single-pole eight-throw switch works at 24.25 GHz-33 GHz, has the advantages of a wide working frequency band and a small insertion loss in a conduction state.

Description

Technical Field

[0001] The present invention belongs to the technical field of electronic circuits, and in particular relates to a gallium nitride reflective single-pole eight-throw switch. Background Art

[0002] The development of communication systems requires RF front-ends with wider bandwidths, higher compactness, and greater efficiency. The widespread use of large-scale input and output and beamforming technologies in 5G communication systems places even higher demands on the performance of single-pole, multi-throw switches between antennas and transceivers.

[0003] An MMIC (Monolithic Microwave Integrated Circuit) is a general term for microwave circuit modules with diverse functions, formed by integrating multiple active and passive components on a semiconductor substrate. These modules offer low on-state losses and a wider bandwidth. Third-generation wide-bandgap semiconductor materials, such as gallium nitride, have become ideal for microwave / millimeter-wave system applications due to their wider bandgap, higher critical breakdown electric field, and higher electron saturation drift velocity.

[0004] In the related art, the typical circuit structure of the switch circuit is a series-parallel structure. Figure 1 As shown, a K-class resistor is connected in series with the gate, which can effectively isolate the RF signal from the DC bias and reduce the gate current, thereby reducing the power consumption of the RF switch. Figure 1 The switch shown has drain-grounded FETs Q1 and Q2 connected in parallel in two branches, with the Q1 and Q2 FETs in opposite bias states to their corresponding branches, Q3 and Q4. When Q3 is on, Q1 is off, and the switch is in the transmitting state. The RF signal is output to the antenna through the on-state Q3, with very little signal loss through the off-state Q1. When Q3 is off, Q1 is on, and the switch is in the receiving state. The signal enters from the antenna and passes through the on-state Q4 to the receiver. However, a small amount of RF signal passes through the off-state Q3 and is shunted by the on-state Q1, ultimately reaching the transmitter.

[0005] Although the above-mentioned switching circuit can reduce insertion loss to a certain extent, since the signal passes directly through the tube, it will inevitably cause additional insertion loss and reduce the linearity of the circuit. Summary of the Invention

[0006] In order to solve the above problems existing in the prior art, the present invention provides a gallium nitride reflective single-pole eight-throw switch. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0007] The application provides a gallium nitride reflective single-knife eight-pole switch, which comprises an input end, an input capacitor, a first microstrip transmission line and eight branches, each of the branches comprises a second microstrip transmission line, a third microstrip transmission line, a gallium nitride HEMT, a control voltage signal end, an isolation resistor, an output capacitor, a direct-current isolation capacitor, an output end and a first node, wherein,

[0008] One end of the first microstrip transmission line is connected to the input end through the input capacitor, and the other end is connected to the second microstrip transmission line; the second microstrip transmission line is connected in series with the third microstrip transmission line and the output capacitor, and the output capacitor is connected to the output end; the first node is located between the second microstrip transmission line and the third microstrip transmission line; the drain electrode of the gallium nitride HEMT is connected to the first node, the gate electrode is connected to the control voltage signal end through the isolation resistor, and the source electrode is grounded through the direct-current isolation capacitor.

[0009] In one embodiment of the application, the working range comprises 24.25 GHz-33 GHz.

[0010] In one embodiment of the application, the input capacitor, the output capacitor, the direct-current isolation capacitor, the first microstrip transmission line, the second microstrip transmission line, the third microstrip transmission line, the gallium nitride HEMT and the isolation resistor are made of the same substrate.

[0011] In one embodiment of the application, the material of the substrate is silicon carbide, silicon, gallium nitride, quartz glass or ceramic.

[0012] In one embodiment of the application, the input capacitor, the output capacitor and the direct-current isolation capacitor are all metal-insulator-metal (MIM) capacitors.

[0013] In one embodiment of the application, the first microstrip transmission line, the second microstrip transmission line and the third microstrip transmission line comprise a first metal layer, a second metal layer and a semiconductor material between the first metal layer and the second metal layer.

[0014] In one embodiment of the application, the semiconductor material comprises gallium nitride, silicon or silicon carbide.

[0015] In one embodiment of the application, the isolation resistor is made by using a two-dimensional electron gas (2DEG) process of a GaN heterojunction structure.

[0016] Compared with the prior art, the gallium nitride reflective single-knife eight-pole switch has the following beneficial effects:

[0017] The application provides a gallium nitride reflective single-pole eight-throw switch, which is operated at 24.25GHz-33GHz and has the characteristics of small insertion loss in a conducting state and wide operating frequency band; in addition, the single-pole eight-throw switch can be monolithically integrated with a low-noise amplifier, an antenna and other modules in a communication system, which is beneficial to reducing the size and power consumption of the system, improving the switching speed and improving the reliability of the system.

[0018] The application will be further described in detail below with reference to the drawings and embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is a structural schematic diagram of a switch circuit in the prior art;

[0020] Figure 2 is a structural schematic diagram of a gallium nitride reflective single-pole eight-throw switch provided by an embodiment of the application;

[0021] Figure 3 is an equivalent circuit diagram of an isolation branch of a gallium nitride reflective single-pole eight-throw switch provided by an embodiment of the application;

[0022] Figure 4 is an equivalent circuit diagram of a conducting branch of a gallium nitride reflective single-pole eight-throw switch provided by an embodiment of the application;

[0023] Figure 5 is a test result schematic diagram of S parameters of a gallium nitride reflective single-pole eight-throw switch provided by an embodiment of the application. DETAILED DESCRIPTION

[0024] The application will be further described in detail below with reference to the drawings and embodiments.

[0025] Figure 2 is a structural schematic diagram of a gallium nitride reflective single-pole eight-throw switch provided by an embodiment of the application. As shown in the figure, Figure 2 the gallium nitride reflective single-pole eight-throw switch provided by the embodiment of the application comprises an input end Pin, an input capacitor C1, a first microstrip transmission line TL1 and eight branches 10, each branch 10 comprises a second microstrip transmission line TL2, a third microstrip transmission line TL3, a gallium nitride HEMT M1, a control voltage signal end Vg1, an isolation resistor R, an output capacitor C2, a direct current blocking capacitor C3, an output end Pout and a first node; wherein,

[0026] One end of the first microstrip transmission line TL1 is connected to the input terminal Pin through the input capacitor C1, and the other end is connected to the second microstrip transmission line TL2, and the second microstrip transmission line TL2 is connected in series with the third microstrip transmission line TL3 and the output capacitor C2, and the output capacitor C2 is connected to the output terminal Pout; the first node is located between the second microstrip transmission line TL2 and the third microstrip transmission line TL3, the drain electrode D of the gallium nitride HEMT M1 is connected to the first node, the gate electrode G is connected to the control voltage signal terminal Vg1 through the isolation resistor R, and the source electrode S is connected to the ground through the DC blocking capacitor C3.

[0027] In the embodiment, the gallium nitride reflective single-pole eight-throw switch includes an input terminal Pin, an input capacitor C1, a first microstrip transmission line TL1, and eight branches 10 symmetrically distributed, each branch 10 including a second microstrip transmission line TL2, a third microstrip transmission line TL3, a gallium nitride HEMT M1, a control voltage signal terminal Vg1, an isolation resistor R, an output capacitor C2, a DC blocking capacitor C3, an output terminal Pout, and a first node; specifically, the input capacitor C1 is connected in series with the first microstrip transmission line TL1 and the input terminal Pin as input matching, the second microstrip transmission line TL2 is connected in series with the third microstrip transmission line TL3 and the output capacitor C2, and then connected to the output terminal Pout to participate in output matching, the gate electrode G of the gallium nitride HEMT M1 is connected to the control voltage signal terminal Vg1 through the isolation resistor R, the drain electrode D of the gallium nitride HEMT M1 is connected to the first node between the second microstrip transmission line TL2 and the third microstrip transmission line TL3, and the source electrode S of the gallium nitride HEMT M1 is connected to the DC blocking capacitor C3 and then connected to the ground.

[0028] It should be understood that the DC blocking capacitor C3 is used in parallel with the gallium nitride HEMT M1 in the full reflection switch, which can block the DC loop formed by the radio frequency port and the ground, so that the DC voltage of the input port and the output port is kept floating, thereby enhancing the isolation degree of the off state of the switch.

[0029] Figure 3 is an equivalent circuit diagram of the isolation branch of the gallium nitride reflective single-pole eight-throw switch provided by the embodiment of the present application, Figure 4 is an equivalent circuit diagram of the conduction branch of the gallium nitride reflective single-pole eight-throw switch provided by the embodiment of the present application. As Figure 3 shown, when the control voltage signal terminal Vg1 makes the gallium nitride HEMT M1 conductive, the gallium nitride HEMT M1 can be regarded as a very small conduction resistance (Ron), and this point corresponds to a short-circuit point; through the quarter-wavelength impedance transformation effect of the second microstrip transmission line TL2, it is equivalent to an open circuit from the input terminal Pin to the output terminal Pout, and the signal is fully reflected; as Figure 4 shown, when the control voltage signal terminal Vg1 makes the M1 cut off, the gallium nitride HEMT M1 can be equivalent to an off capacitor (Coff), at this time only a small number of signals pass through and are lost, and the branch is in a conductive state.

[0030] Exemplarily, the gate width of the GaN HEMT M1 is 100 um.

[0031] Optionally, the working range of the GaN reflective single-pole eight-throw switch includes 24.25 GHz-33 GHz.

[0032] Optionally, in the GaN reflective single-pole eight-throw switch, the input capacitor C1, the output capacitor C2, the DC blocking capacitor C3, the first microstrip transmission line TL1, the second microstrip transmission line TL2, the third microstrip transmission line TL3, the GaN HEMT M1 and the isolation resistor R are made of the same substrate. Exemplarily, the material of the substrate is silicon carbide, silicon, gallium nitride, quartz glass or ceramic.

[0033] In the embodiment, the input capacitor C1, the output capacitor C2 and the DC blocking capacitor C3 are metal-insulator-metal (MIM) capacitors. Specifically, the performance parameters of the input capacitor C1 are C=495 fF, W=50 um and L=10 um, and the performance parameters of the output capacitor C2 are C=470 fF, W=50 um and L=10 um.

[0034] Optionally, the first microstrip transmission line TL1, the second microstrip transmission line TL2 and the third microstrip transmission line TL3 include a first metal layer, a second metal layer and a semiconductor material between the first metal layer and the second metal layer, wherein the semiconductor material includes gallium nitride, silicon or silicon carbide.

[0035] In the embodiment, the length and the width of the second microstrip transmission line TL2 are 375 um and 10 um respectively, and the length and the width of the third microstrip transmission line TL3 are 375 um and 20 um respectively.

[0036] Optionally, the isolation resistor R is made by using a two-dimensional electron gas (2DEG) process of a GaN heterojunction structure.

[0037] Further, the embodiment further illustrates the reflective single-pole eight-throw switch by testing.

[0038] Figure 5 is a schematic diagram of test results of S parameters of the GaN reflective single-pole eight-throw switch provided by the embodiment. In the range of 24.25 GHz-33 GHz and in the on state, the reflective single-pole eight-throw switch provided by the embodiment is tested, as shown in Figure 5 the insertion loss of the single-pole eight-throw switch is less than 2.8 dB, and in the isolation state, the isolation degree is greater than 23 dB.

[0039] From the embodiments, it can be seen that the GaN reflective single-pole eight-throw switch has the following advantages:

[0040] The application provides a gallium nitride reflective single-pole eight-throw switch, which is operated at 24.25GHz-33GHz, has the characteristics of small insertion loss in a conducting state and wide operating frequency band, and can be monolithically integrated with a low-noise amplifier, an antenna and other modules in a communication system.

[0041] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0042] In addition, the terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified.

[0043] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present specification.

[0044] Although the application has been described in connection with specific embodiments thereof, it will be understood that it is capable of further modifications and this application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended to cover and embrace all adaptations or modifications of the application. The terminology used herein for the purpose of describing particular embodiments is not intended to be limiting of the application. This application is intended to cover all such modifications and alternatives within the scope of the application including combinations of aspects of the application with other items not described.

[0045] The above description is further detailed in connection with specific preferred embodiments of the application, and it is not to be construed that the specific implementation of the application is limited to these descriptions. For those skilled in the art, without departing from the concept of the application, a number of simple deductions or substitutions can be made, and all of them should be considered as falling within the protection scope of the application.

Claims

1. A gallium nitride reflective single-pole eight-throw switch, characterized by, The application relates to a gallium nitride HEMT (high electron mobility transistor) amplifier, which comprises an input end, an input capacitor, a first microstrip transmission line and eight branches, each of the branches comprising a second microstrip transmission line, a third microstrip transmission line, a gallium nitride HEMT, a control voltage signal end, an isolation resistor, an output capacitor, a blocking capacitor, an output end and a first node. One end of the first microstrip transmission line is connected to the input end through the input capacitor, and the other end is connected to the second microstrip transmission line; the second microstrip transmission line is connected in series with the third microstrip transmission line and the output capacitor, and the output capacitor is connected to the output end; the first node is located between the second microstrip transmission line and the third microstrip transmission line; the drain electrode of the gallium nitride HEMT is connected to the first node, the gate electrode is connected to the control voltage signal end through the isolation resistor, and the source electrode is grounded through the blocking capacitor. The working range is 24.25GHz-33GHz.

2. The gallium nitride reflective single-pole eight-throw switch of claim 1, wherein, The input capacitor, the output capacitor, the blocking capacitor, the first microstrip transmission line, the second microstrip transmission line, the third microstrip transmission line, the gallium nitride HEMT and the isolation resistor are made of the same substrate.

3. The gallium nitride reflective single-pole eight-throw switch of claim 2, wherein, The material of the substrate is silicon carbide, silicon, gallium nitride, quartz glass or ceramic.

4. The gallium nitride reflective single-pole eight-throw switch according to claim 3, characterized in that: The input capacitor, the output capacitor and the blocking capacitor are all metal-insulator-metal (MIM) capacitors.

5. The gallium nitride reflective single-pole eight-throw switch of claim 1, wherein, The first microstrip transmission line, the second microstrip transmission line and the third microstrip transmission line comprise a first metal layer, a second metal layer and a semiconductor material between the first metal layer and the second metal layer.

6. The gallium nitride reflective single-pole eight-throw switch of claim 3, wherein, The semiconductor material comprises gallium nitride, silicon or silicon carbide.

7. The gallium nitride reflective single-pole eight-throw switch of claim 6, wherein, The isolation resistor is made by using a two-dimensional electron gas (2DEG) process of a GaN heterojunction structure.

8. The gallium nitride reflective single-pole eight-throw switch of claim 1, wherein, ​

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