vibrating device

Abstract

Vibration device. A vibration device capable of improving reliability is provided. The vibration device has a base, a vibration element disposed on the base, a ring-shaped resin body joined to the base and surrounding the vibration element in plan view, and a cover disposed to sandwich the vibration element with the base. A first metal layer is disposed on a surface of the resin body opposite the cover, and a second metal layer is disposed on a surface of the cover opposite the resin body. The first metal layer and the second metal layer are joined, whereby the vibration element is sealed by the base, the resin body, and the cover.

Description

TECHNICAL FIELD

[0001] The present application relates to a vibration device. BACKGROUND

[0002] For example, Patent Document 1 discloses a piezoelectric vibration device provided with a piezoelectric vibration plate having a vibration portion, and a resin film joined to both main surfaces of the piezoelectric vibration plate around the vibration portion, thereby sealing the vibration portion. According to Patent Document 1, by adopting this configuration, a low-cost piezoelectric vibration device can be provided.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2020-141264

[0004] However, in the configuration described in Patent Document 1, the vibration portion is sealed by the resin film which is an organic material, and thus, compared to a structure in which sealing is performed using an inorganic material, the air tightness is poor, and there is a problem in that the frequency of the vibration device tends to change over time. SUMMARY

[0005] The vibration device has: a base having a first surface and a second surface in a front-and-back relationship with the first surface; a vibration element disposed on the first surface; a ring-shaped resin body having a third surface joined to the first surface and a fourth surface in a front-and-back relationship with the third surface, which surrounds the vibration element when viewed from a direction orthogonal to the first surface; and a cover having a fifth surface and a sixth surface in a front-and-back relationship with the fifth surface, which is disposed so as to sandwich the vibration element with the first surface and the fifth surface, the resin body is provided with a first metal layer on a surface including the fourth surface, the cover is provided with a second metal layer on the fifth surface, the first metal layer and the second metal layer are joined, and thereby the vibration element is sealed by the base, the resin body, and the cover. BRIEF DESCRIPTION OF DRAWINGS

[0006] Figure 1 is a schematic perspective view showing the configuration of a vibration device.

[0007] Figure 2 is Figure 1 is a cross-sectional view of the vibration device shown in FIG. 1 along the line A-A’.

[0008] Figure 3 is a plan view showing the configuration of a state in which the cover is removed in the vibration device.

[0009] Figure 4 is a flowchart showing a manufacturing method of a vibration device in order of steps.

[0010] Figure 5 is a cross-sectional view showing a manufacturing method of a vibration device.

[0011] Figure 6 is a sectional view showing a manufacturing method of a vibration device.

[0012] Figure 7 is a sectional view showing a manufacturing method of a vibration device.

[0013] Figure 8 is a sectional view showing a manufacturing method of a vibration device.

[0014] Figure 9 is a sectional view showing a manufacturing method of a vibration device.

[0015] Explanation of reference numerals

[0016] 10: base; 10a: 1st surface; 10b: 2nd surface; 20: resin body; 20a: 3rd surface; 20b: 4th surface; 20b1: joint surface; 20c, 20d: side surface; 21: protective film; 30: lid; 30a: 5th surface; 30a1: joint surface; 30b: 6th surface; 31: insulating layer; 40: joint portion; 41: 1st metal layer; 42: 2nd metal layer; 50: semiconductor substrate; 51: insulating layer; 52: integrated circuit; 60: external terminal; 61: through electrode; 62: insulating layer; 70: vibration element; 71: vibration substrate; 72: excitation electrode; 73: excitation electrode; 74: conductive joint member; 75: mounting electrode; 100: vibration device. DETAILED DESCRIPTION

[0017] In the following drawings, three axes orthogonal to each other are set as an X axis, a Y axis, and a Z axis. The direction along the X axis is set as an "X direction", the direction along the Y axis is set as a "Y direction", and the direction along the Z axis is set as a "Z direction". The direction of an arrow is a + direction, and the direction opposite to the + direction is set as a - direction. In addition, sometimes the +Z direction is referred to as "up" or "above", and the -Z direction is referred to as "down" or "below". Further, the observation from the +Z direction is referred to as plan view observation or plan view.

[0018] Further, in the following description, for example, the description of "on the substrate" indicates any one of the case where the substrate is disposed in contact therewith, the case where the substrate is disposed with other structure therebetween, or the case where a part of the substrate is disposed in contact therewith and a part of the substrate is disposed with other structure therebetween.

[0019] First, the structure of the vibration device 100 will be described with reference to Figures 1-3 The structure of the vibration device 100 will be described.

[0020] As shown in FIG. 1, the vibration device 100 includes a base 10, a resin body 20, a lid 30, and a vibration element 70. Figure 1As shown, the vibration device 100 has a base 10, a resin body 20 arranged on the base 10, a lid 30 arranged on the resin body 20, and a joint portion 40 that joins the resin body 20 and the lid 30.

[0021] A semiconductor substrate 50 (refer to Figure 2 ) described later is arranged on the upper surface of the base 10. The base 10 has external terminals 60 that electrically connect to the outside on the lower surface. A vibration element 70 (refer to Figure 2 ) described later is arranged on the base 10. The resin body 20 is arranged in a ring shape on the base 10 in a manner that surrounds the vibration element 70. Furthermore, by arranging the lid 30 on the resin body 20, the vibration element 70 can be sealed.

[0022] In addition, the joint portion 40 is joined by a first metal layer 41 and a second metal layer 42 in order to improve the airtightness in the joint of the resin body 20 and the lid 30. The structure of the vibration device 100 will be described in detail below with reference to Figure 2 and Figure 3 .

[0023] As shown in Figure 2 and Figure 3 , the base 10 of the vibration device 100 has a first surface 10a on which the vibration element 70 is arranged, and a second surface 10b that is in a front-rear relationship with the first surface 10a and on which the external terminals 60 are arranged.

[0024] The resin body 20 has a third surface 20a that is joined to the first surface 10a of the base 10, and a fourth surface 20b that is in a front-rear relationship with the third surface 20a. As shown in Figure 3 , the resin body 20 is arranged in a ring shape on the base 10 in a manner that surrounds the vibration element 70 when viewed from above (when viewed from a direction orthogonal to the first surface 10a). As the material of the resin body 20, a publicly known material such as a photosensitive resin can be used.

[0025] Furthermore, the resin body 20 is covered with a protective film 21 composed of an inorganic material on side surfaces 20c and 20d that connect the third surface 20a and the fourth surface 20b. As the inorganic material, for example, silicon oxide (SiO2) is used. Furthermore, the resin body 20 is also covered with the protective film 21 on the fourth surface 20b. In this way, by covering the fourth surface 20b, the side surfaces 20c and 20d of the resin body 20 with the protective film 21, the gas barrier property can be improved, and the airtightness in the resin body 20 can be improved.

[0026] The lid 30 has a fifth face 30a on which the vibration element 70 is disposed, and a sixth face 30b which is in an opposite relationship to the fifth face 30a. That is, the vibration element 70 can be sandwiched by the fifth face 30a of the lid 30 and the first face 10a of the base 10. The lid 30 is formed of, for example, a silicon substrate. In addition, an insulating layer 31 is formed on the fifth face 30a of the lid 30. The insulating layer 31 is, for example, silicon oxide (SiO2).

[0027] In the base 10, as described above, the semiconductor substrate 50 having the integrated circuit 52 is disposed on at least one of the first face 10a side or the second face 10b side. As shown in FIG. 1, the resin body 20 is disposed so as to overlap at least a portion of the integrated circuit 52. In other words, the resin body 20 is disposed so as to overlap at least a portion of the semiconductor substrate 50 having the integrated circuit 52. The integrated circuit 52 is a circuit having active elements such as transistors. Figure 2

[0028] In addition, an insulating layer 51 is formed on the first face 10a of the base 10. The insulating layer 51 is, for example, silicon oxide (SiO2). The thickness of the insulating layer 51 is, for example, 1 μm. That is, the insulating layer 51 covers the upper face of the semiconductor substrate 50 having the integrated circuit 52. The insulating layer 51 has a function of protecting the integrated circuit 52.

[0029] In this way, the semiconductor substrate 50 having the integrated circuit 52 and the resin body 20 are disposed so as to overlap, and thus, compared to a case in which the integrated circuit 52 and the resin body 20 are not disposed so as to overlap, the vibration device 100 can be made smaller. In addition, in a case in which, due to the integrated circuit 52 being disposed on the first face 10a side, a concavo-convex is generated at the bonding face in the base 10, the concavo-convex can be absorbed by the resin body 20, and thus, the air tightness of the vibration device 100 can be improved.

[0030] The bonding portion 40 is a portion in which the first metal layer 41 disposed on the fourth face 20b of the resin body 20 and the second metal layer 42 disposed on the fifth face 30a of the lid 30 are activatedly bonded. Activated bonding is performed by the free energy of the surface of the activated metal, and the bonding layer is completed by diffusion and recombination of metal atoms, and thus, after bonding, there is no bonding interface, and a bonding strength close to the base material strength of the material is obtained. In addition, no excessive heat or pressure is applied at the time of bonding, and thus, the residual stress after bonding can be suppressed, and the influence of frequency variation of the vibration element 70 can be suppressed.

[0031] ​Further, the first metal layer 41 and the second metal layer 42 function as bonding metals and are composed of a material containing gold (Au). The first metal layer 41 and the second metal layer 42 of the present embodiment are composed of a thin film of gold. Thus, since they are composed of a thin film of gold, a metal oxide film is not formed on the surfaces of the first metal layer 41 and the second metal layer 42. Thus, in the activation bonding or atomic diffusion bonding, the metal oxide film does not need to be removed, and the first metal layer 41 and the second metal layer 42 can be easily bonded. Further, the surface roughness is small, and thus, the bonding can be achieved at normal temperature without load or with a small load. Thus, the functions of the circuit elements such as the insulating layer, the CMOS transistor, and the capacitor, which are positioned under the bonding portion 40, are not damaged by the bonding.

[0032] Further, the thickness of the first metal layer 41 provided to the resin body 20 is, for example, 20 nm. The thickness of the second metal layer 42 provided to the cover 30 is, for example, 20 nm. That is, the thickness of the bonding portion 40 composed of the first metal layer 41 and the second metal layer 42 is 40 nm. Further, as the adhesion layer that is the base of the first metal layer 41 and the second metal layer 42, for example, a laminated film of titanium (Ti) or titanium (Ti) and tungsten (W) can be used. Thus, as a stress relaxation layer that reduces stress caused by a difference in linear expansion, the reliability can be improved.

[0033] The vibration element 70 is mounted to the first face 10a of the base 10 in a state of a cantilever beam. The vibration element 70 has a vibration substrate 71, an excitation electrode 72 disposed on the upper surface of the vibration substrate 71, and an excitation electrode 73 disposed on the lower surface of the vibration substrate 71. The vibration element 70 is electrically connected to the integrated circuit 52 of the semiconductor substrate 50 via a conductive bonding member 74 connected to the excitation electrodes 72 and 73 and a mounting electrode 75.

[0034] Further, the first metal layer 41 and the second metal layer 42 are bonded, and thus, the vibration element 70 becomes in a state of being vacuum-sealed by the base 10, the resin body 20, and the cover 30. Thus, a sealed space S is formed inside the vibrator device 100.

[0035] The external terminal 60 is formed on the second face 10b of the base 10. The external terminal 60 is electrically connected to the integrated circuit 52 of the semiconductor substrate 50 via a through electrode 61 provided to pass through the base 10. An insulating layer 62 is formed between the external terminal 60 and the base 10. The insulating layer 62 is also formed between the through electrode 61 and the base 10.

[0036] Next, the manufacturing method of the vibrator device 100 will be described with reference to Figures 4-9 The manufacturing method of the vibrator device 100 mainly has a forming process of the base 10 (and the resin body 20), a forming process of the vibration element 70, a forming process of the cover 30, a bonding and singulation process.

[0037] First, the manufacturing method of the substrate 10 will be described. In step S11, a silicon wafer is prepared, and a through-hole for forming the through electrode 61 is formed in the portion that becomes the substrate 10. Specifically, the through-hole is formed by performing a dry etching process on the substrate 10. Next, a thermal oxide film is formed on the inner wall of the through-hole, thus completing the formation of the through-hole with the insulating layer 62.

[0038] In step S12, a through-hole electrode 61 is formed. Specifically, for example, it is formed by embedding boron (B)-implanted polysilicon into a through-hole. The through-hole electrode 61 may also be formed after the semiconductor substrate 50 is formed. In addition, by forming the through-hole electrode 61 first, defects in the multilayered semiconductor substrate 50 can be reduced, resulting in a high-quality substrate 10.

[0039] In step S13, a semiconductor substrate 50 having an integrated circuit 52 is formed using a known manufacturing method. In step S14, mounting electrodes 75 are formed on the semiconductor substrate 50. Specifically, an insulating layer 51 is formed on the upper surface of the base 10 containing the semiconductor substrate 50. Then, electrodes electrically connected to the integrated circuit 52 (not shown) are formed, and mounting electrodes 75 and conductive bonding members 74 are formed on the electrodes.

[0040] In step S15, a resin body 20 is formed on the upper surface of the base 10. First, a photosensitive resin is applied, for example, around the upper surface (i.e., the first surface 10a) of the base 10 to form the resin body 20. Then, as... Figure 5 As shown, silicon oxide is formed, for example, on the entire base 10 on which the resin body 20 is disposed. As a result, a protective film 21 of silicon oxide is formed on the entire surface of the resin body 20 from the upper surface (i.e., the fourth surface 20b) to the side surfaces 20c and 20d.

[0041] In step S16, a first metal layer 41 constituting the joint 40 is formed on the fourth surface 20b of the resin body 20. Specifically, as shown in... Figure 6 As shown, on the bonding surface 20b1 of the forming bonding portion 40 of the resin body 20, a gold (Au) thin film is formed, for example, using a titanium (Ti) thin film as a substrate, through sputtering and etching processes. The combined titanium and gold thin films are, for example, 20 nm in diameter.

[0042] Next, in step S21, the vibrating element 70 is formed using a known manufacturing method. In step S22, the vibrating element 70 is mounted on the base 10. Specifically, the terminals (not shown) of the vibrating element 70 and the mounting electrodes 75 are electrically connected via conductive bonding members 74. Thus, the vibrating element 70 is mounted on the first surface 10a of the base 10.

[0043] Next, the manufacturing method of the cover 30 will be described. In step S31, the silicon wafer that becomes the cover 30 is cleaned. In step S32, as... Figure 7 As shown, silicon oxide is formed on the entire surface of the fifth surface 30a of the cover 30 to form an insulating layer 31.

[0044] In step S33, a second metal layer 42 is formed on the cover 30 to form the joint 40. Specifically, as... Figure 7 As shown, at the bonding surface 30a1 of the forming bonding portion 40 of the cover 30, a gold (Au) thin film is formed, for example, using a titanium (Ti) thin film as a substrate, through sputtering and etching processes. The combined titanium and gold thin films are, for example, 20 nm in diameter.

[0045] Next, the bonding process and the monolithization process will be described. In step S41, the surfaces of the first metal layer 41 and the second metal layer 42 are activated. In step S42, the first metal layer 41 and the second metal layer 42 are activated and bonded.

[0046] First, such as Figure 8 As shown, the surfaces of the first metal layer 41 and the second metal layer 42 are activated. Specifically, the surfaces of the first metal layer 41 and the second metal layer 42 are activated by irradiating them with a neutral argon ion beam or the like.

[0047] Then, as Figure 9 As shown, a cover 30 is placed on a base 10, which is provided with a vibrating element 70 and a resin body 20, so that the first metal layer 41 and the second metal layer 42 are in contact. That is, the silicon wafer on the base 10 side and the silicon wafer on the cover 30 side are bonded together.

[0048] According to this activated bonding, the metal atoms on the surfaces of the first metal layer 41 and the second metal layer 42, specifically gold (Au) atoms in this embodiment, diffuse and recombine at the contact surface between the first metal layer 41 and the second metal layer 42, thus forming a strong bond without a bonding interface. Furthermore, by smoothing the surfaces of the first metal layer 41 and the second metal layer 42, bonding can be performed using only the free surface energy of the surfaces of the first metal layer 41 and the second metal layer 42. Therefore, bonding can be performed at room temperature without active pressure.

[0049] At this point, pressurization can be applied or not. Applying pressure allows for more reliable bonding at room temperature. When the surface roughness (Ra: arithmetic mean roughness) is less than 5 nm and the surface is smooth, bonding can be achieved instantaneously using only free surface energy. Therefore, a large pressure is not required, and active pressurization is not necessary.

[0050] Furthermore, the functions of circuit elements such as the insulating layer, CMOS transistor, and capacitors beneath the bonding portion 40 will not be damaged by loads or heat during the bonding process. The cover 30 can be bonded to the circuit elements, ensuring miniaturization of the vibrating device 100 and increasing the number of vibrating devices 100 obtainable from the silicon wafer. In addition, the load on the bonding device is reduced in this case, thus enabling bonding with a more cost-effective device.

[0051] Furthermore, by not applying excessive pressure or heat during bonding, damage to the integrated circuit 52 during bonding can be reduced even when at least a portion of the integrated circuit 52 overlaps with the resin body 20. Consequently, the vibration device 100 can be miniaturized.

[0052] In this embodiment, the first metal layer 41 and the second metal layer 42 are bonded by activated bonding; however, atomic diffusion bonding can also be used. Similar to activated bonding, atomic diffusion bonding allows the first metal layer 41 and the second metal layer 42 to be bonded without applying excessive pressure or heat during bonding.

[0053] The first metal layer 41 and the second metal layer 42 are bonded by activated bonding to form a bonding portion 40. In this way, the silicon wafer on the base 10 side and the silicon wafer on the cover 30 side are bonded together, resulting in a silicon wafer in which multiple vibrating devices 100 are integrally formed.

[0054] In step S43, the silicon wafer is thinned by grinding and milling, thus making the vibrating device 100 thinner. In step S44, an insulating layer 62 and an external terminal 60 are formed on the second surface 10b of the base 10. In step S45, frequency adjustment is performed.

[0055] In step S46, each vibrating device 100 is monolithically formed from a silicon wafer using a cutting method such as dicing. Through the above manufacturing process, the vibrating device 100 can be manufactured.

[0056] As described above, the vibration device 100 of this embodiment includes: a base 10 having a first surface 10a and a second surface 10b opposite to the first surface 10a; a vibration element 70 disposed on the first surface 10a; and an annular resin body 20 having a third surface 20a joined to the first surface 10a and a fourth surface 20b opposite to the third surface 20a, surrounding the vibration element 70 when viewed from a direction orthogonal to the first surface 10a; The cover 30, having a fifth surface 30a and a sixth surface 30b opposite to the fifth surface 30a, is configured to sandwich the vibrating element 70 by the first surface 10a and the fifth surface 30a. The resin body 20 has a first metal layer 41 disposed on the fourth surface 20b, and the cover 30 has a second metal layer 42 disposed on the fifth surface 30a. The first metal layer 41 and the second metal layer 42 are joined together, thereby sealing the vibrating element 70 by the base 10, the resin body 20 and the cover 30.

[0057] According to this structure, inorganic materials are bonded and sealed as in the case of the first metal layer 41 and the second metal layer 42. Therefore, compared with the case where the first metal layer 41 and the second metal layer 42 are organic materials, the airtightness can be improved, and the time-varying frequency of the vibrating element 70, i.e., the vibrating device 100, can be suppressed. Furthermore, the resin body 20 is disposed between the base 10 and the cover 30. Therefore, even if there are unevennesses in the area of ​​the base 10 that overlaps with the joint 40, the resin body 20 can absorb them, thereby improving the airtightness.

[0058] In addition to the fourth surface 20b, the first metal layer 41 can also be disposed on the sides 20c and 20d of the resin body 20, and the resin body 20 is covered by the first metal layer 41, thereby further improving the airtightness.

[0059] Furthermore, in the vibrating device 100, preferably, the sides 20c and 20d of the resin body 20 connected to the third surface 20a and the fourth surface 20b are covered by a protective film 21. According to this structure, since the sides 20c and 20d of the resin body 20 are covered by the protective film 21, gas barrier properties can be improved, and airtightness can be further enhanced.

[0060] Furthermore, in the vibrating device 100, it is preferable that a protective film 21 is disposed between the fourth surface 20b and the first metal layer 41 of the resin body 20. According to this structure, after the resin body 20 is disposed on the base 10, the protective film 21 can be completely covered on the resin body 20. Therefore, it is not necessary to locally remove the protective film 21, which simplifies the manufacturing process.

[0061] Furthermore, in the vibrating device 100, the first metal layer 41 and the second metal layer 42 are preferably activated and bonded. According to this structure, by performing activated bonding, a strong bond without a bonding interface can be achieved. Thus, the first metal layer 41 and the second metal layer 42 can be bonded at room temperature without active pressure.

[0062] Furthermore, in the vibrating device 100, the first metal layer 41 and the second metal layer 42 preferably contain gold. According to this structure, since gold is included, no metal oxide film is formed on the surfaces of the first metal layer 41 and the second metal layer 42. Therefore, in activated bonding or atomic diffusion bonding, it is not necessary to remove the metal oxide film, and the first metal layer 41 and the second metal layer 42 can be easily bonded.

[0063] Furthermore, in the vibration device 100, it is preferable that the base 10 is provided with a semiconductor substrate 50 having an integrated circuit 52 on at least one of the first surface 10a and the second surface 10b. According to this structure, since the semiconductor substrate 50 is provided on the first surface 10a and the second surface 10b of the base 10, the vibration device 100 can be miniaturized compared to the case where the semiconductor substrate 50 is separate.

[0064] Furthermore, in the vibration device 100, the integrated circuit 52 is preferably disposed on the first surface 10a, and when viewed from above, the resin body 20 is disposed with at least a portion overlapping the integrated circuit 52. According to this structure, the integrated circuit 52 and the resin body 20 are disposed in an overlapping manner, thus enabling the vibration device 100 to be miniaturized compared to a case where the integrated circuit 52 and the resin body 20 are not overlapping. Furthermore, in the event of unevenness or irregularity in the lower layer of the joint 40 in the base 10 due to the placement of the integrated circuit 52 on the first surface 10a, the resin body 20 can absorb the unevenness or irregularity, thereby improving the airtightness of the vibration device 100.

[0065] Furthermore, in the vibration device 100, an external terminal 60 is preferably disposed on the second surface 10b, and the external terminal 60 and the integrated circuit 52 are electrically connected via a through electrode 61 disposed on the base 10. According to this structure, the external terminal 60, which is electrically connected to the integrated circuit 52, is disposed on the second surface 10b, so that, for example, the electrical characteristics can be verified using the external terminal 60 in the form of a silicon wafer.

[0066] The following describes variations of the above-described embodiments.

[0067] In the above embodiment, the cover 30 is formed on a silicon substrate; however, the cover 30 may also be formed on borosilicate glass or the like. Borosilicate glass has the same coefficient of linear expansion as the base 10 formed from the silicon wafer, thus suppressing frequency variations caused by thermal stress. Furthermore, step S32, which forms the insulating layer 31, can be omitted.

[0068] Furthermore, the second metal layer 42 can also be formed on the entire surface of the fifth surface 30a. The second metal layer 42 can provide electrostatic shielding for the space S, thereby suppressing the influence of noise. In addition, the etching process for forming the second metal layer 42 only at the joint 40 can be omitted.

[0069] In addition, the aforementioned vibration device 100 can be well used as an oscillator, acceleration sensor, angular velocity sensor and other inertial sensors.

Claims

1. A vibration device, characterized in that, It has the following characteristics: A base having a first surface and a second surface that is opposite to the first surface; A vibrating element, which is disposed on the first surface; A ring-shaped resin body having a third surface that engages with the first surface and a fourth surface that is opposite to the third surface, surrounding the vibrating element when viewed from a direction orthogonal to the first surface; as well as A cover, having a fifth surface and a sixth surface opposite to the fifth surface, is configured to hold the vibrating element between the first surface and the fifth surface. The resin body is disposed between the base and the cover, and a first metal layer is disposed on the surface including the fourth surface. The side of the resin body that connects to the third surface and the fourth surface is covered with a protective film made of inorganic material. The cover has a second metal layer disposed on the fifth surface. The first metal layer and the second metal layer are joined together, thereby sealing the vibrating element by the base, the resin body and the cover.

2. The vibration device according to claim 1, characterized in that, The protective film is disposed between the fourth surface and the first metal layer of the resin body.

3. The vibration device according to claim 1 or 2, characterized in that, The first metal layer and the second metal layer are activated and bonded.

4. The vibration device according to claim 1 or 2, characterized in that, The first metal layer and the second metal layer contain gold.

5. The vibration device according to claim 1 or 2, characterized in that, The base is provided with a semiconductor substrate having an integrated circuit on at least one of the first surface and the second surface.

6. The vibration device according to claim 5, characterized in that, The integrated circuit is disposed on the first surface. In the top view, the resin body is configured to overlap with at least a portion of the integrated circuit.

7. The vibration device according to claim 6, characterized in that, An external terminal is provided on the second surface. The external terminals and the integrated circuit are electrically connected via through electrodes disposed on the base.

Images