Semiconductor process chamber and semiconductor processing equipment

Abstract

The present application discloses a semiconductor process chamber and semiconductor processing equipment. The semiconductor process chamber includes a chamber body and a dielectric window arranged on the top of the chamber body; it also includes a heating assembly arranged on the top surface of the dielectric window; the heating assembly includes an inner hot air ring, an outer hot air ring and at least one air inlet pipe that supplies air to the inner hot air ring and the outer hot air ring at the same time; the inner hot air ring is located in the inner circle of the outer hot air ring; the inner hot air ring is provided with a first exhaust hole, and the outer hot air ring is provided with a second exhaust hole. In this embodiment, the inner hot air ring heats the area near the center of the dielectric window, and the outer hot air ring heats the area near the edge of the dielectric window. The inner hot air ring and the outer hot air ring are uniformly supplied with air by the air inlet pipe, which are the same heat source. Since the annular heating belt of the outer circle of the dielectric window in the original scheme is removed, the number of heat sources of the dielectric window is reduced. When controlling the temperature, only the temperature and flow rate of the supplied air need to be controlled, thereby making the temperature control process of the dielectric window simpler.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor manufacturing equipment, and in particular to a semiconductor process chamber and semiconductor processing equipment. Background Art

[0002] As the working hours increase, etching byproducts in the semiconductor process chamber will gradually accumulate on the dielectric window. Currently, the possibility of etching byproducts accumulating on the dielectric window is mainly reduced by increasing the temperature of the dielectric window. Since the temperature uniformity of the dielectric window will affect the etching effect, it is necessary to improve the temperature control accuracy of the dielectric window.

[0003] In an existing semiconductor process chamber, a hot air ring is provided on the top surface of the dielectric window to heat the area near the center of the dielectric window. An annular heating belt is provided on the circumferential end surface of the dielectric window to heat the area near the edge of the dielectric window, and the temperature of the dielectric window is measured by a thermocouple on the outer ring of the dielectric window to achieve temperature control of the dielectric window. The working principle of the annular heating belt is that the current generates heat through the resistance wire, so the annular heating belt needs to be grounded. The specific method is to set a conductive ring between the annular heating belt and the dielectric window, and to ground it through the conductive ring. The annular heating belt is locked in a form similar to a pipe clamp, and is fixed to the circumferential end surface of the dielectric window together with the conductive ring.

[0004] Due to the processing and installation errors of the annular heating belt and the conductive ring, there may be a gap between the annular heating belt and the dielectric window, which will lead to inconsistent heating power in different areas of the annular heating belt. The heating power of the area where the annular heating belt fits well with the dielectric window is low, and the heating power of the area where there is a gap with the dielectric window is high. In addition, the annular heating belt and the hot air ring are different heat sources and also need to be coordinated and controlled. Therefore, the temperature control system of the semiconductor process chamber is relatively complex. Summary of the invention

[0005] In view of the above technical problems, the present application provides a semiconductor process chamber and a semiconductor processing equipment, which can improve the problem of complex temperature control of the dielectric window of the existing semiconductor process chamber.

[0006] In order to solve the above technical problems, in a first aspect, an embodiment of the present application provides a semiconductor process chamber, comprising a chamber body and a dielectric window arranged on the top of the chamber body, and the semiconductor process chamber further comprises:

[0007] A heating assembly is arranged on the top surface of the medium window; the heating assembly comprises an inner hot air ring, an outer hot air ring and an air inlet pipe for simultaneously supplying air to the inner hot air ring and the outer hot air ring; the outer hot air ring is arranged around the edge of the medium window, and the inner hot air ring is located in the inner circle of the outer hot air ring; the inner hot air ring is provided with a first exhaust hole, and the outer hot air ring is provided with a second exhaust hole.

[0008] Optionally, the air inlet pipe includes:

[0009] The pipe body has an air inlet at one end;

[0010] a partition, disposed in the channel of the duct body, dividing the channel into a first channel and a second channel, wherein both the first channel and the second channel are communicated with the air inlet;

[0011] a first air outlet, connected to the first channel and connected to the inner hot air ring;

[0012] The second air outlet is communicated with the second channel and the outer hot air ring.

[0013] Optionally, the air inlet, the first channel and the first air outlet constitute a first air flow channel, and the air inlet, the second channel and the second air outlet constitute a second air flow channel;

[0014] The first air flow channel is provided with a first valve;

[0015] The second air flow channel is provided with a second valve.

[0016] Optionally, two first partitions are provided in the inner hot air ring to divide the inner hot air ring into two first half hot air rings, and each first half hot air ring is provided with a first exhaust hole;

[0017] Two second partitions are arranged inside the outer hot air ring to divide the outer hot air ring into two second half hot air rings, and each second half hot air ring is provided with a second exhaust hole;

[0018] There are two air inlet pipes, one air inlet pipe supplies air to a first half hot air ring and a second half hot air ring at the same time, and the other air inlet pipe supplies air to another first half hot air ring and another second half hot air ring at the same time.

[0019] Optionally, the semiconductor process chamber further includes:

[0020] An adjustment bracket is connected to the upper part of the chamber body, the medium window is arranged on the adjustment bracket, and the chamber body is sealed;

[0021] An annular heating belt is arranged on the outer side wall of the adjusting bracket and is used for heating the adjusting bracket.

[0022] Optionally, the semiconductor process chamber further includes a coil bracket, which is connected to the adjustment bracket and pressed onto the inner hot air ring and the outer hot air ring to limit the axial displacement of the inner hot air ring and the outer hot air ring.

[0023] Optionally, the coil bracket cooperates with the inner hot air ring and the outer hot air ring respectively through a pin hole structure to limit the circumferential rotation of the inner hot air ring and the outer hot air ring.

[0024] Optionally, an inner coil and an outer coil are provided on a side of the coil support facing the dielectric window;

[0025] The inner coil is located in the surrounding area of ​​the inner hot air ring, and the outer coil is located in the surrounding area between the inner hot air ring and the outer hot air ring.

[0026] Optionally, the coil support is in elastic contact with the inner hot air ring via an O-ring; and / or,

[0027] The coil support is in elastic contact with the outer hot air ring via an O-shaped sealing ring.

[0028] In a second aspect, an embodiment of the present application further provides a semiconductor processing device, comprising a semiconductor process chamber as described in the above embodiments.

[0029] As described above, in this embodiment, the inner hot air ring heats the area near the center of the medium window, and the outer hot air ring heats the area near the edge of the medium window, thereby greatly increasing the surface heating area of ​​the medium window to improve the temperature uniformity of the medium window. In this embodiment, the inner hot air ring and the outer hot air ring are uniformly supplied with air by the air inlet pipe, which are the same heat source. Since the annular heating belt on the outer circle of the medium window in the original scheme is removed, the number of heat sources of the medium window is reduced. When controlling the temperature, only the temperature and flow rate of the supplied air need to be controlled, thereby making the temperature control process of the medium window simpler. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor.

[0031] Figure 1 It is a schematic diagram of the assembly structure of a heating component and a dielectric window of a semiconductor process chamber provided in an embodiment of the present application;

[0032] Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure along line AA;

[0033] Figure 3 is a schematic cross-sectional structural diagram of an air inlet duct provided in an embodiment of the present application;

[0034] Figure 4 It is a structural schematic diagram of an inner hot air ring and an outer hot air ring provided in an embodiment of the present application;

[0035] Figure 5 is a structural schematic diagram of a semiconductor process chamber provided in an embodiment of the present application;

[0036] Figure 6 It is a schematic diagram of a temperature control simulation of a semiconductor process chamber provided in an embodiment of the present application;

[0037] Figure 7 It is a partial schematic diagram of an assembly structure of a semiconductor process chamber provided in an embodiment of the present application;

[0038] Figure 8 It is a schematic diagram of soft contact between a coil support and an inner hot air ring provided in an embodiment of the present application.

[0039] The realization of the purpose, functional features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The above-mentioned drawings have shown clear embodiments of this application, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0040] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0041] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0042] Depending on the context, as used in this article, the singular forms "one", "an" and "the" are intended to also include plural forms, unless there is an opposite indication in the context. It should be further understood that the terms "comprising", "including" indicate the presence of the described features, steps, operations, elements, components, projects, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, projects, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following" etc. used in this application can be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Only when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way, will there be an exception to this definition.

[0043] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information.

[0044] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0045] For ease of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.

[0046] See also Figure 1 and Figure 5 , Figure 1 1 is a schematic diagram of an assembly structure of a heating component and a dielectric window of a semiconductor process chamber provided in an embodiment of the present application. Figure 51 is a schematic diagram of the structure of a semiconductor process chamber provided in an embodiment of the present application, the semiconductor process chamber includes a dielectric window 10, a heating component 20 and a chamber body 30, the dielectric window 10 is arranged on the top of the chamber body 30 to form a closed environment for semiconductor processing. The heating component 20 is arranged on the top surface of the dielectric window 10 to heat the dielectric window 10. Since the dielectric window 10 is generally made of insulating materials such as quartz or ceramic materials, the thermal conductivity is poor. Therefore, when only a local area of ​​the dielectric window 10 is heated, it is difficult to control the overall temperature difference of the dielectric window 10 within a low range.

[0047] The heating assembly 20 of this embodiment includes an inner hot air ring 21, an outer hot air ring 22 and an air inlet pipe 23 arranged on the top surface of the medium window 10. The outer hot air ring 22 is arranged around the edge of the medium window 10, and the inner hot air ring 21 is located in the inner circle of the outer hot air ring 22. The air inlet pipe 23 is connected to the inner hot air ring 21 and the outer hot air ring 22 respectively, and can supply air to the inner hot air ring 21 and the outer hot air ring 22 at the same time. For example, the outside air can pass through the air amplifier and the heater, and then enter the inner hot air ring 21 and the outer hot air ring 22 through the air inlet pipe 23, and heat the medium window 10 through the high-temperature gas. The inner hot air ring 21 is provided with a first exhaust hole 211. After the air enters the inner hot air ring 21, it can heat the area near the center of the medium window 10 and be discharged through the first exhaust hole 211. The outer hot air ring 22 is provided with a second exhaust hole 221 . After the wind enters the outer hot air ring 22 , it can heat the area close to the edge of the dielectric window 10 and be exhausted through the second exhaust hole 221 .

[0048] In this embodiment, the inner hot air ring 21 heats the area near the center of the dielectric window 10, and the outer hot air ring 22 heats the area near the edge of the dielectric window 10, thereby greatly increasing the surface heating area of ​​the dielectric window 10 to improve the temperature uniformity of the dielectric window 10. In this embodiment, the inner hot air ring 21 and the outer hot air ring 22 are uniformly supplied with air by the air inlet pipe 23, which are the same heat source. Since the annular heating belt on the outer ring of the dielectric window in the original solution is removed, the number of heat sources of the dielectric window is reduced. When controlling the temperature, only the temperature and air flow rate of the supplied air need to be controlled, thereby making the temperature control process of the dielectric window 10 simpler.

[0049] It can be understood that the inner hot air ring 21 and the outer hot air ring 22 are annular cavity structures, see Figure 2 , Figure 2 yes Figure 1In the cross-sectional structural diagram along the AA line, the dielectric window 10 can be used as the bottom plate of the annular cavity structure, so that the high-temperature heat exchange gas in the annular cavity structure directly heats the dielectric window 10. The annular cavity structure can be a triangular annular cavity structure, a rectangular annular cavity structure, a polygonal annular cavity structure or other irregular annular cavity structures. Preferably, the inner hot air ring 21 and the outer hot air ring 22 are circular annular cavity structures, which have better circular symmetry, and the inner hot air ring 21 and the outer hot air ring 22 can be concentrically arranged for more uniform heating.

[0050] In one embodiment, see Figure 1 and Figure 3 , Figure 3 It is a schematic diagram of a cross-sectional structure of an air inlet pipe provided in an embodiment of the present application. The air inlet pipe 23 may include a pipe body 231, a partition 233, a first air outlet 236 and a second air outlet 237. An air inlet 232 is provided at one end of the pipe body 231. The partition 233 is arranged in the channel of the pipe body 231, and the channel is divided into a first channel 234 and a second channel 235. The first channel 234 and the second channel 235 both extend axially and are connected to the air inlet 232. The first air outlet 236 is connected to the first channel 234 and is connected to the inner hot air ring 21. The second air outlet 237 is connected to the second channel 235 and is connected to the outer hot air ring 22. For example, the first air outlet 236 can be connected to the inner hot air ring 21 through a first connecting pipe (not shown in the figure), and the second air outlet 237 can be connected to the outer hot air ring 22 through a second connecting pipe (not shown in the figure). The first connecting pipe can be an independent structural member, or it can be connected to the inner hot air ring 21 and integrated with the inner hot air ring 21, or it can be connected to the first air outlet 236 and integrated with the air inlet pipe 23. The second connecting pipe can be set with reference to the first connecting pipe, and will not be described in detail in this embodiment.

[0051] The heating principle of the heating component 20 of this embodiment is as follows: the heat exchange gas enters from the air inlet 232 of the air inlet pipe 23, a part of it enters the first channel 234, and then flows into the inner hot air ring 21 from the first air outlet 236 to heat the area close to the center of the medium window 10, and finally the heat exchange gas is discharged from the first exhaust hole 211; another part of the heat exchange gas enters the second channel 235, and then flows into the outer hot air ring 22 from the second air outlet 237 to heat the area close to the edge of the medium window 10, and finally the heat exchange gas is discharged from the second exhaust hole 221.

[0052] This embodiment uses the same heat source to provide heat to the inner hot air ring 21 and the outer hot air ring 22 at the same time. When controlling the temperature, only the temperature and flow rate of the supply air need to be controlled, thereby simplifying the temperature control system.

[0053] Further, in order to better control the temperature of the inner hot air ring 21 and the outer hot air ring 22, in one embodiment, refer to Figure 1 and Figure 4 , Figure 4 It is a schematic diagram of the structure of an inner hot air ring and an outer hot air ring provided in an embodiment of the present application. The inner hot air ring 21 and the outer hot air ring 22 supply air through two air inlet pipes 23. Specifically, two first partitions 213 are provided in the inner hot air ring 21 to divide the inner hot air ring 21 into two first half hot air rings, and each first half hot air ring is provided with a first exhaust hole 211. Two second partitions 223 are provided in the outer hot air ring 22 to divide the outer hot air ring 22 into two second half hot air rings, and each second half hot air ring is provided with a second exhaust hole 221. Since the first partition 213 and the second partition 223 are the internal structure of the heating component 20, Figure 4 There are two air inlet pipes 23, one air inlet pipe 23 supplies air to a first half hot air ring and a second half hot air ring at the same time, and the other air inlet pipe 23 supplies air to another first half hot air ring and another second half hot air ring at the same time.

[0054] In this embodiment, the inner hot air ring 21 is divided into two independent heating zones (two first half hot air rings), and air is supplied through two air inlet pipes 23 for heating control, and the outer hot air ring 22 is divided into two independent heating zones (two second half hot air rings), and air is supplied through two air inlet pipes 23 for heating control, so that more precise temperature control of the inner hot air ring 21 and the outer hot air ring 22 can be achieved, and the medium window 10 can be heated more evenly.

[0055] As an example, see Figure 4 , the inner hot air ring 21 and the outer hot air ring 22 are arranged concentrically, the two first baffles 213 are arranged on the same diameter of the inner hot air ring 21, and the inner hot air ring 21 is divided into two first half hot air rings, and the first exhaust holes 211 on the two first half hot air rings are arranged symmetrically relative to the center of the inner hot air ring 21; the two second baffles 223 are arranged on the same diameter of the outer hot air ring 22, and the outer hot air ring 22 is divided into two second half hot air rings, and the second exhaust holes 221 on the two second half hot air rings are arranged symmetrically relative to the center of the outer hot air ring 22. It should be noted that the two first baffles 213 and the two second baffles 223 do not have to be located on the same straight line. The two air inlet pipes 23 can be arranged symmetrically relative to the center of the inner hot air ring 21. Among them, each first half hot air ring of the inner hot air ring 21 is provided with an inner hot air ring air inlet 212, and the first air outlet 236 of each air inlet pipe 23 is respectively connected to the inner hot air ring air inlet 212 on a first half hot air ring. An outer hot air ring air inlet 222 is provided on each second half hot air ring of the outer hot air ring 22 , and the second air outlet 237 of each air inlet pipe 23 is connected to the outer hot air ring air inlet 222 , respectively.

[0056] In this embodiment, the overall structure of the inner hot air ring 21, the outer hot air ring 22 and the two air inlet pipes 23 is symmetrically arranged relative to the center of the inner hot air ring 21, so that more precise temperature control can be achieved.

[0057] In some embodiments, in order to perform temperature control more accurately, valves can be set for the air flow channel flowing to the inner hot air ring 21 and the air flow channel flowing to the outer hot air ring 22, respectively, so as to individually control the heating efficiency of the inner hot air ring 21 and the outer hot air ring 22. Specifically, the air inlet 232, the first channel 234 and the first air outlet 236 of the air inlet pipe 23 constitute the first air flow channel, and the air inlet 232, the second channel 235 and the second air outlet 237 of the air inlet pipe 23 constitute the second air flow channel. The first valve can be set in the first air flow channel, and the second valve can be set in the second air flow channel. Of course, the first valve can also be set at the aforementioned first connecting pipe, and the second valve can also be set at the aforementioned second connecting pipe. Specifically, the above two valves can be set at the air inlet 232 of the air inlet pipe 23, or they can be set in the first channel 234 / the second channel 235, or they can be set at the first air outlet 236 / the second air outlet 237, or they can be set on the first connecting pipe / the second connecting pipe, respectively, and the embodiments of the present application are not particularly limited. As some examples, the first valve can control the opening or closing of the first air flow channel, or the size of the channel opening, and the second valve can control the opening or closing of the second air flow channel, or the size of the channel opening, thereby achieving more precise heating control to make the temperature of the medium window 10 more uniform.

[0058] In order to heat the dielectric window 10 more uniformly, in one embodiment, refer to Figure 5 , Figure 5 1 is a schematic diagram of the structure of a semiconductor process chamber provided in an embodiment of the present application, the process chamber includes a dielectric window 10, a heating component 20, a chamber body 30, an adjustment bracket 40 and an annular heating belt 50, the adjustment bracket 40 is connected to the top of the chamber body 30, the dielectric window 10 is arranged on the adjustment bracket 40, and the chamber body 30 is sealed to form a closed environment for wafer processing. The structure of the heating component 20 is as described above, and the dielectric window 10 can be evenly heated. The annular heating belt 50 is arranged on the outer side wall of the adjustment bracket 40 to heat the adjustment bracket 40. After the temperature of the adjustment bracket 40 is increased, the temperature can be transferred to the dielectric window 10, that is, the annular heating belt 50 indirectly heats the dielectric window 10 through the adjustment bracket 40.

[0059] It should be noted that in the traditional structure, since the conductive ring can be grounded by connecting the adjustment bracket 40, the heat generated by the annular heating belt on the dielectric window (specifically located on the outside of the conductive ring) can be transferred to the adjustment bracket 40 through the conductive ring, resulting in a difference in the heating power of the annular heating belt 50 on the outer wall 43 of the adjustment bracket 40. The system may even reduce the output power of the annular heating belt 50 to 0, resulting in a temperature control out-of-control state. In this embodiment, the dielectric window 10 is heated by the heating component 20 and the annular heating belt 50. The heating component 20 and the annular heating belt 50 are controlled by two independent heat sources. Since the annular heating belt on the dielectric window 10 is removed, there is no contact or communication between the two heat sources, which can eliminate interference between the heat sources. Therefore, this embodiment can improve the heating efficiency of the dielectric window 10 and the uniformity of temperature control. Please refer to Figure 6 , Figure 6 It is a schematic diagram of a temperature control simulation of a semiconductor process chamber provided in an embodiment of the present application. Through simulation, it can be calculated that under this scheme, when the set value is 110°C, the overall temperature control of the dielectric window 10 can be controlled at 109.97°C, and the surface temperature uniformity of the dielectric window is good, and the temperature difference can be ignored at this scale.

[0060] In order to increase the cushioning and reduce the rigid contact of the parts, in one embodiment, please continue to refer to Figure 5 The adjustment bracket 40 includes a first annular support surface 41 and a second annular support surface 42 arranged oppositely, and an outer side wall 43 and an inner side wall 44 arranged oppositely. The outer side wall 43 connects the first annular support surface 41 and the second annular support surface 42 at the outer circle, and the inner side wall 44 connects the first annular support surface 41 and the second annular support surface 42 at the inner circle. It should be noted that in this embodiment, "relatively arranged" does not mean that the two are necessarily parallel. For example, the outer side wall 43 and the inner side wall 44 can form a non-parallel structure as shown in the figure. The dielectric window 10 is in elastic contact with the first annular support surface 41 through the first annular sealing ring O1, and the second annular support surface 42 is supported on the chamber body 30. Since the internal area of ​​the chamber body 30 frequently switches between the vacuum state and the atmospheric state, the dielectric window 10 can produce a small longitudinal displacement on the adjustment bracket 40 under the elastic force of the first annular sealing ring O1, avoiding the risk of damage to components caused by the displacement of the dielectric window 10 under rigid contact. Similarly, a second annular sealing ring O2 may be provided between the second annular supporting surface 42 and the top surface of the chamber body 30 , so that the second annular supporting surface 42 is in elastic contact with the chamber body 30 through the second annular sealing ring O2 .

[0061] In one embodiment, please refer to Figure 5The semiconductor process chamber may further include a coil support 60, which is connected to the adjustment support 40, for example, by screws / bolts. The coil support 60 may fix the inner coil 101 and the outer coil 102 on the top surface of the dielectric window 10. In this embodiment, the coil support 60 is used to cover the inner hot air ring 21 and the outer hot air ring 22 at the same time to limit the axial displacement of the inner hot air ring 21 and the outer hot air ring 22, so that the inner hot air ring 21 and the outer hot air ring 22 are closely attached to the top surface of the dielectric window 10.

[0062] Furthermore, in one embodiment, the coil support 60 and the inner hot air ring 21, and the coil support 60 and the outer hot air ring 22 can be matched through a pin hole structure to limit the circumferential rotation of the inner hot air ring 21 and the outer hot air ring 22. The pin hole structure can also be used as a positioning reference when the coil support 60 is assembled with the inner hot air ring 21 and the outer hot air ring 22. Specifically, a positioning pin can be set on the coil support 60, and a hole can be set on the inner hot air ring 21 and the outer hot air ring 22, or vice versa. Holes can also be set on the coil support 60, the inner hot air ring 21, and the outer hot air ring 22, and a separate pin can be inserted into the hole for limiting.

[0063] As an example, see Figure 2 and Figure 5 , an inner coil 101 and an outer coil 102 are provided on the side of the coil support 60 facing the dielectric window 10; the inner coil 101 is located in the surrounding area of ​​the inner hot air ring 21, and the outer coil 102 is located in the surrounding area between the inner hot air ring 21 and the outer hot air ring 22. The inner coil 101 and the outer coil 102 can control the generation of plasma in the semiconductor process chamber. It can be understood that, in addition to reserving space for the inner coil 101 and the outer coil 102, the area of ​​the inner hot air ring 21 and the outer hot air ring 22 can be as large as possible to improve the uniformity and heating efficiency of the dielectric window 10.

[0064] In one embodiment, see Figure 5 , Figure 7 and Figure 8 , Figure 7 is a partial schematic diagram of an assembly structure of a semiconductor process chamber provided in an embodiment of the present application, Figure 8It is a schematic diagram (cross-sectional view) of soft contact between a coil support and an inner hot air ring provided in an embodiment of the present application. The coil support 60 is in elastic contact with the inner hot air ring 21 and the outer hot air ring 22 respectively through the O-ring O3. Also because the internal area of ​​the chamber body 30 frequently switches between the vacuum state and the atmospheric state, the inner hot air ring 21 and the outer hot air ring 22 will follow the medium window 10 to produce a slight longitudinal displacement, thereby avoiding rigid contact between the coil support 60 and the inner hot air ring 21 and the outer hot air ring 22. It should be noted that one, two or more O-rings O3 can be set between the coil support 60 and the inner hot air ring 21 / outer hot air ring 22, which is not particularly limited in the embodiment of the present application.

[0065] The embodiment of the present application further provides a semiconductor processing device, which may include a semiconductor process chamber as described in any of the above embodiments, for example, the semiconductor processing device may be a wafer etching device. The structural features and corresponding principles of the process chamber of the semiconductor processing device have been described in detail above, and will not be repeated in this embodiment.

[0066] The semiconductor process chamber and semiconductor processing equipment provided by the present application are described in detail above. The principle and implementation method of the present application are described in detail using specific examples. It should be noted that in the present application, the description of each embodiment has its own emphasis. For the part that is not described or recorded in detail in a certain embodiment, please refer to the relevant description of other embodiments.

[0067] The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of the present application.

[0068] The above are only preferred embodiments of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A semiconductor process chamber, comprising a chamber body and a dielectric window arranged on the top of the chamber body, characterized in that: The semiconductor process chamber further comprises: A heating assembly is arranged on the top surface of the medium window; the heating assembly comprises an inner hot air ring, an outer hot air ring and an air inlet pipe for simultaneously supplying air to the inner hot air ring and the outer hot air ring; the outer hot air ring is arranged around the edge of the medium window, and the inner hot air ring is located in the inner circle of the outer hot air ring; the inner hot air ring is provided with a first exhaust hole, and the outer hot air ring is provided with a second exhaust hole; The air inlet pipe comprises: The pipe body has an air inlet at one end; a partition, disposed in the channel of the duct body, dividing the channel into a first channel and a second channel, wherein both the first channel and the second channel are communicated with the air inlet; a first air outlet, connected to the first channel and connected to the inner hot air ring; The second air outlet is communicated with the second channel and the outer hot air ring.

2. The semiconductor process chamber according to claim 1, characterized in that: The air inlet, the first channel and the first air outlet constitute a first air flow channel, and the air inlet, the second channel and the second air outlet constitute a second air flow channel; The first air flow channel is provided with a first valve; The second air flow channel is provided with a second valve.

3. The semiconductor process chamber according to claim 1, wherein: Two first partitions are arranged in the inner hot air ring to divide the inner hot air ring into two first half hot air rings, and each first half hot air ring is provided with a first exhaust hole; Two second partitions are arranged inside the outer hot air ring to divide the outer hot air ring into two second half hot air rings, and each second half hot air ring is provided with a second exhaust hole; There are two air inlet pipes, one air inlet pipe supplies air to a first half hot air ring and a second half hot air ring at the same time, and the other air inlet pipe supplies air to another first half hot air ring and another second half hot air ring at the same time.

4. The semiconductor process chamber according to claim 1, wherein: Also includes: An adjustment bracket is connected to the upper part of the chamber body, the medium window is arranged on the adjustment bracket, and the chamber body is sealed; An annular heating belt is arranged on the outer side wall of the adjusting bracket and is used for heating the adjusting bracket.

5. The semiconductor process chamber according to claim 4, characterized in that: It also includes a coil bracket, which is connected to the adjustment bracket and pressed onto the inner hot air ring and the outer hot air ring to limit the axial displacement of the inner hot air ring and the outer hot air ring.

6. The semiconductor process chamber according to claim 5, characterized in that: The coil support cooperates with the inner hot air ring and the outer hot air ring respectively through a pin hole structure to limit the circumferential rotation of the inner hot air ring and the outer hot air ring.

7. The semiconductor process chamber according to claim 5, characterized in that: The coil support is provided with an inner coil and an outer coil on a side facing the dielectric window; The inner coil is located in the surrounding area of ​​the inner hot air ring, and the outer coil is located in the surrounding area between the inner hot air ring and the outer hot air ring.

8. The semiconductor process chamber according to claim 5, characterized in that: The coil support is in elastic contact with the inner hot air ring via an O-ring; and / or, The coil support is in elastic contact with the outer hot air ring via an O-shaped sealing ring.

9. A semiconductor processing device, characterized in that: A semiconductor process chamber comprising any one of claims 1-8.

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