Automatic silicon wafer chamfering process

Abstract

This application relates to the field of silicon processing technology, and more particularly to an automatic silicon wafer chamfering process. The process includes the following steps: a transfer mechanism transfers a silicon wafer to a first interaction point via a receiving part; a first feeding mechanism moves to the first interaction point, exchanges the silicon wafer with the transfer mechanism via a first receiving part, and transfers it to a second interaction point; a second feeding mechanism moves to the second interaction point, completes the silicon wafer exchange with the first receiving part, and transfers it to a chamfering station; a second receiving part acquires the chamfered silicon wafer and transfers it to the first interaction point; the first and second receiving parts are located on the same straight line, and after the receiving part exchanges the transferred silicon wafer with the first receiving part, it moves horizontally to the second receiving part to receive the silicon wafer. This process optimizes the silicon wafer transfer procedure, reduces the number of transfers by the transfer mechanism, shortens the single transfer path and time, and reduces the amplitude of transfer movements, thereby enabling timely replenishment and transfer of silicon wafers, improving the accuracy of movement and positioning, and ultimately improving overall processing efficiency.

Description

Technical Field

[0001] This application relates to the field of silicon processing technology, and in particular to an automatic chamfering process for silicon wafers. Background Technology

[0002] Silicon wafers, as an excellent conductive material, are widely used in semiconductor, solar cell, and other technological fields. Post-processing of silicon wafers generally includes steps such as chamfering, cleaning, and drying. Since the cut wafers typically have sharp edges, chamfering is necessary to round off these sharp edges.

[0003] However, in the existing processing technology, a series of processing steps are performed on each silicon wafer, including positioning and inspection, chamfering, cleaning and drying. Among these, the chamfering process takes a long time, leaving the positioning and inspection station and the cleaning station idle, which greatly reduces the efficiency of silicon wafer processing.

[0004] To address this, a fully automated chamfering machine has been developed, featuring multiple chamfering mechanisms. A gripping device picks up silicon wafers, which are then moved by a wafer transfer device and placed onto the chamfering mechanism. This allows for automated processing with one transfer mechanism cooperating with multiple chamfering devices, enabling simultaneous chamfering operations and improving efficiency. However, this machine only uses the gripping and wafer transfer devices to load and transfer wafers to the chamfering mechanism, handling only one wafer at a time. The gripping device must first transfer the picked-up wafer to a storage location before it can pick up another unprocessed wafer for transfer to the chamfering mechanism. Furthermore, this equipment is complex, occupies a large area, and cannot utilize existing industry equipment. If manufacturers adopt this fully automated chamfering machine, they must abandon their existing equipment and establish a new production line and equipment, significantly increasing costs.

[0005] Furthermore, in existing processing technologies, silicon wafer positioning and detection, chamfering, cleaning and drying are usually performed separately and without any connection between them. This results in a lack of coordination between the various processes, making it impossible to adjust the silicon wafer loading, unloading and transfer according to the speed of each processing equipment, leading to low processing efficiency. Summary of the Invention

[0006] Therefore, it is necessary to provide an automated silicon wafer chamfering process that simplifies the process, optimizes the silicon wafer transfer procedure, and improves the coordination of each process step, so as to increase the silicon wafer processing efficiency by a factor of two.

[0007] The technical solution provided in this application is as follows:

[0008] An automated silicon wafer chamfering process includes the following steps:

[0009] The transfer mechanism has a receiving part that transfers the silicon wafer to be chamfered to the first interaction point;

[0010] The first feeding mechanism has at least a first receiving part and a second receiving part. The first receiving part runs to the first interaction point, completes the silicon wafer handover with the transfer mechanism, and transfers the obtained silicon wafer to the second interaction point.

[0011] The second feeding mechanism has a third receiving part, which runs to the second interaction point to receive the silicon wafer on the first receiving part; the projection of the second interaction point along the height direction of the second feeding mechanism coincides with the chamfering station, and after receiving the silicon wafer on the first receiving part, the third receiving part moves straight down to the chamfering station to deliver the obtained silicon wafer.

[0012] The chamfering station performs chamfering on the obtained silicon wafers;

[0013] The second receiving section acquires the beveling-completed silicon wafer at the beveling station and transfers the obtained silicon wafer to the first interaction point;

[0014] At the first interaction point, the first receiving part receives the silicon wafer to be chamfered on the receiving part; wherein, the first receiving part and the second receiving part are located on the same straight line; after the receiving part interacts with the first receiving part, the receiving part is translated relative to the second receiving part to dock with the second receiving part, so as to receive the chamfered silicon wafer on the second receiving part and transfer the obtained silicon wafer.

[0015] In one embodiment, the processing technology further includes the following steps:

[0016] The transfer mechanism transfers the silicon wafer to be processed to the inspection station, and performs positioning inspection on the silicon wafer at the inspection station;

[0017] The transfer mechanism transfers the silicon wafer that has been inspected at the inspection station to the first interaction point.

[0018] In one embodiment, the inspection station is equipped with an inspection mechanism; the step "the transfer mechanism transfers the silicon wafer to be processed to the inspection station, and performs positioning inspection on the silicon wafer at the inspection station" includes the following steps:

[0019] Photograph the silicon wafer and calibrate the silicon wafer positioning edges using the photographs to obtain the angle and position information of the positioning edges;

[0020] The angle that the positioning edge should be adjusted is calculated based on the angle and position information of the positioning edge.

[0021] Adjust the position of the silicon wafer positioning edge according to the angle to be adjusted.

[0022] In one embodiment, multiple chamfering stations are set up, and the following steps are repeated: "The transfer mechanism has a receiving part, which transfers the silicon wafer to be chamfered to the first interaction point"; "The first feeding mechanism has at least a first receiving part and a second receiving part, which moves to the first interaction point, completes the silicon wafer handover with the transfer mechanism, and transfers the obtained silicon wafer to the second interaction point"; and "The second feeding mechanism has a third receiving part, which moves to the second interaction point to receive the silicon wafer on the first receiving part; the projection of the second interaction point along the height direction of the second feeding mechanism coincides with the chamfering station, and after receiving the silicon wafer on the first receiving part, the third receiving part moves straight down to the chamfering station to deliver the obtained silicon wafer" to continuously provide un-chamfered silicon wafers to the chamfering station.

[0023] In one embodiment, the chamfering station is equipped with a chamfering mechanism; the step "the chamfering station performs chamfering treatment on the obtained silicon wafer" includes the following steps:

[0024] The basic parameters of the silicon wafer to be chamfered at the chamfering station are detected and obtained; wherein, the basic parameters include the center position parameter, the contour parameter, the positioning edge position parameter, and the sharp corner position parameter;

[0025] Based on the aforementioned basic parameters, the chamfering path parameters of the chamfering mechanism, the required adjustment angle of the silicon wafer tip rotation, and the position parameters of the chamfering mechanism are calculated.

[0026] Adjust the position of the chamfering mechanism and the position of the silicon wafer positioning edge according to the position parameters so that the positioning edge to be chamfered corresponds to the chamfering mechanism;

[0027] According to the chamfering route parameters, the chamfering mechanism chamfers the silicon wafer to be chamfered.

[0028] In one embodiment, the processing technology further includes the following steps:

[0029] The transfer mechanism delivers the chamfered silicon wafers to the cleaning station;

[0030] The cleaning station cleans and spins dry the beveled silicon wafers.

[0031] In one embodiment, the processing technology further includes the following steps:

[0032] The third feeding mechanism has at least a fourth receiving part and a fifth receiving part. The fourth receiving part moves to the third interaction point and interacts with the receiving part to receive the chamfered silicon wafer, and then transfers the obtained silicon wafer to the fourth interaction point.

[0033] The fourth feeding mechanism moves to the fourth interaction point and receives the chamfered silicon wafer on the fourth receiving part;

[0034] In the step "the transfer mechanism delivers the chamfered silicon wafer to the cleaning station", the fourth feeding mechanism transfers the obtained chamfered silicon wafer to the cleaning station and hands it over to the cleaning station. The cleaning station then cleans and spins dry the obtained silicon wafer.

[0035] In one embodiment, the processing technology further includes the following steps: the third feeding mechanism uses the fifth receiving part to obtain the cleaned silicon wafer at the cleaning station and transfers the silicon wafer to the third interaction point.

[0036] In one embodiment, the processing technology further includes the following steps: at the third interaction point, the fourth receiving part receives the silicon wafer transferred by the transfer mechanism, and after the transfer mechanism interacts with the fourth receiving part, the transfer mechanism receives the silicon wafer that has been cleaned on the fifth receiving part.

[0037] In one embodiment, the processing technology further includes the following steps: the transfer mechanism receives the silicon wafer at the fifth receiving section at the third interaction point and transfers the obtained silicon wafer to the storage station.

[0038] Compared with existing technologies, the automatic silicon wafer chamfering process provided in this application optimizes the silicon wafer transfer steps through the cooperation between the transfer mechanism and the first and second feeding mechanisms, shortens the single transfer path length of the silicon wafer, and improves the motion accuracy during silicon wafer transfer. It is understood that the transfer mechanism only needs to transfer the silicon wafer to the first interaction point to interact with the first feeding mechanism before it can perform other actions. While the transfer mechanism performs other actions, the first and second feeding mechanisms cooperate to continue transferring the silicon wafer to the chamfering station for chamfering. Subsequently, the first feeding mechanism transfers the chamfered silicon wafer back to the first interaction point. This shortens the single transfer path of the transfer mechanism and allows it to transfer silicon wafers to each station in a timely manner according to the processing rate of each station, thereby effectively shortening and optimizing the silicon wafer feeding, unloading, and transfer processes, significantly improving efficiency. The high silicon wafer processing speed is achieved. Specifically, after the transfer mechanism transfers the silicon wafer to be chamfered to the first receiving section, it moves relative to the second receiving section to receive the chamfered silicon wafer. This reduces the number of transfers and shortens the transfer path length, effectively saving movement time and preventing excessive movement of the transfer mechanism and / or the second receiving section, thus improving the docking accuracy. Furthermore, since the projection of the second interaction point in the height direction coincides with the chamfering station, the third receiving section, after receiving the silicon wafer from the first receiving section at the second interaction point, can move straight down to the chamfering station to deliver the wafer. This shortens the movement path length of the third receiving section and improves the positioning accuracy of the silicon wafer at the chamfering station, facilitating subsequent chamfering operations and preventing misalignment of the silicon wafer due to excessive movement of the third receiving section.

[0039] This application combines existing industry equipment for positioning, chamfering, and cleaning. Through the cooperation between the transfer mechanism and the first and second feeding mechanisms, multiple processing steps such as silicon wafer positioning, chamfering, cleaning, and drying are integrated into a single production line. The steps for silicon wafer picking, transfer, and feeding between each processing step are adjusted and optimized. By fully utilizing the processing speed of the equipment to adjust the silicon wafer transfer steps, the processing efficiency of the equipment is maximized. This effectively improves the processing efficiency of silicon wafers without requiring significant changes to the production line or replacement of processing equipment, greatly reducing equipment replacement costs.

[0040] In addition, since the chamfering process takes longer than the positioning, inspection, cleaning, and drying processes, this application sets up multiple chamfering stations to achieve multi-threaded chamfering operations and rationally arranges the inspection and cleaning stations to work in conjunction with the multiple chamfering stations, thereby significantly improving the processing efficiency of silicon wafers. Attached Figure Description

[0041] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 An automatic chamfering process for silicon wafers is provided in one embodiment of this application.

[0043] Figure 2 This is a top view of an integrated automatic chamfering and cleaning device for silicon wafers provided in an embodiment of this application.

[0044] Figure 3 for Figure 2 Front view of the integrated automatic chamfering and cleaning equipment for silicon wafers.

[0045] Figure 4 for Figure 2 A front and side view schematic diagram of the integrated automatic chamfering and cleaning equipment for silicon wafers.

[0046] Figure 5 for Figure 2 A schematic diagram of the back side of the integrated automatic chamfering and cleaning equipment for silicon wafers.

[0047] Figure 6 This is a schematic diagram of a chamfering mechanism provided in an embodiment of this application.

[0048] Figure 7 for Figure 6 A side view of the chamfering mechanism.

[0049] Figure 8 for Figure 6 A top view of the chamfering mechanism.

[0050] Figure 9 This is a schematic diagram of the structure of the first feeding mechanism and the second feeding mechanism provided in an embodiment of this application.

[0051] Figure 10 This is a schematic diagram of the structure of a cleaning mechanism device provided in an embodiment of this application.

[0052] Figure 11 for Figure 10 A partial sectional view of the washing and spin-drying equipment in the picture.

[0053] Figure 12 for Figure 10 A partial sectional view of the washing and spin-drying equipment in the picture.

[0054] Figure 13 This is a silicon wafer processed in one embodiment of this application.

[0055] Reference numerals: A10, Storage station; A20, Inspection station; A30, Chamfering station; A40, Cleaning station; O1, First interaction point; O2, Second interaction point; O3, Third interaction point; O4, Fourth interaction point; 100, Integrated automatic chamfering and cleaning equipment for silicon wafers; 10, Storage mechanism; 20, Positioning and inspection mechanism; 21, Vision inspection module; 22, First rotary suction cup; 30, Chamfering mechanism; 31, First feeding mechanism; 311, First receiving section; 312, Second receiving section; 313, First support; 314, First boom; 32, Second feeding mechanism; 321, Third receiving section; Material section; 322, second support; 323, second boom; 33, chamfering module; 34, precision positioning and detection module; 35, second rotary suction cup; 40, cleaning mechanism; 41, third loading mechanism; 411, fourth receiving section; 412, fifth receiving section; 413, third support; 414, third boom; 42, fourth loading mechanism; 421, sixth receiving section; 422, fourth support; 423, fourth boom; 43, cleaning module; 44, third rotary suction cup; 50, transfer mechanism; 51, receiving section; 200, silicon wafer; 201, positioning edge; 202, sharp corner; 203, circumference. Detailed Implementation

[0056] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0057] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on the other component or there may be an intermediate component. When a component is considered to be "connected to" another component, it can be directly connected to the other component or there may be an intermediate component present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application's specification are for illustrative purposes only and do not represent the only possible implementation.

[0058] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0059] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature and the second feature are in indirect contact through an intermediate medium. Furthermore, "above," "over," and "on top" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0060] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used in this application includes any and all combinations of one or more of the associated listed items.

[0061] like Figure 1 As shown in the figure, an embodiment of this application discloses an automatic chamfering process for silicon wafers, which includes the following steps:

[0062] S1: The transfer mechanism 50 has a receiving part 51, which transfers the silicon wafer 200 to be chamfered to the first interaction point O1;

[0063] S2: The first feeding mechanism 31 has at least a first receiving part 311 and a second receiving part 312. The first receiving part 311 runs to the first interaction point O1 and completes the handover of the silicon wafer 200 with the transfer mechanism 50 and transfers the obtained silicon wafer 200 to the second interaction point O2.

[0064] S3: The second feeding mechanism 32 has a third receiving part 321. The third receiving part 321 moves to the second interaction point O2 to receive the silicon wafer on the first receiving part 311. The projection of the second interaction point O2 along the height direction of the second feeding mechanism 32 coincides with the chamfering station A30. After receiving the silicon wafer on the first receiving part 311, the third receiving part 321 moves straight down to the chamfering station A30 to deliver the obtained silicon wafer.

[0065] S4: Chamfering station A30 performs chamfering on the obtained silicon wafer 200;

[0066] S5: The second receiving part 312 obtains the beveling completed silicon wafer 200 at the beveling station A30 and transfers the obtained silicon wafer 200 to the first interaction point O1;

[0067] S6: At the first interaction point O1, the first receiving part 311 receives the silicon wafer 200 to be chamfered from the receiving part 51; wherein, as shown in the figure Figure 9 As shown, the first receiving part 311 and the second receiving part 312 are located on the same straight line. After the receiving part 51 interacts with the first receiving part 311, the receiving part 51 moves relative to the second receiving part 312 to dock with the second receiving part 312, so as to receive the chamfered silicon wafer 200 on the second receiving part 312 and transfer the obtained silicon wafer 200. With this configuration, after the transfer mechanism 50 has completed feeding the silicon wafer 200, it can directly receive the chamfered silicon wafer 200 transferred from the chamfering station A30 by the first feeding mechanism 31. In this way, the number of transfers by the transfer mechanism 50 is reduced and the movement path is shortened, effectively reducing the transfer time of the silicon wafer 200, thereby improving the overall efficiency of silicon wafer 200 processing and transfer. By repeating the above steps and matching the time required for each station, the time required for silicon wafer 200 transfer is optimized and shortened to improve the processing rate of silicon wafer 200.

[0068] The automatic chamfering process for silicon wafers provided in this application optimizes the steps of transferring the silicon wafer 200 by coordinating the transfer mechanism 50 with the first feeding mechanism 31 and the second feeding mechanism 32, shortens the single transfer path length of the silicon wafer 200, and improves the motion accuracy during silicon wafer transfer. It is understandable that after the transfer mechanism 50 transfers the silicon wafer to the first interaction point O1 and interacts with the first loading mechanism 31, it can perform other actions. While the transfer mechanism 50 performs other actions, the first loading mechanism 31 and the second loading mechanism 32 cooperate to continue transferring the silicon wafer to the chamfering station A30 for chamfering. Subsequently, the first loading mechanism 31 transfers the chamfered silicon wafer back to the first interaction point O1. In this way, the single transfer path of the transfer mechanism 50 is shortened, and the transfer mechanism 50 can transfer the silicon wafer 200 to each station in a timely manner according to the processing rate of each station. This effectively shortens and optimizes the loading, unloading and transfer process of the silicon wafer 200, and significantly improves the processing speed of the silicon wafer 200. Especially in step "S6", after the transfer mechanism 50 transfers to the first receiving part 311, the receiving part 51 of the transfer mechanism 50 translates relative to the second receiving part 312. The third receiving part 321 receives the silicon wafer 200 that has been chamfered at the second receiving part 312, thus reducing the number of transfers by the transfer mechanism 50 and shortening the transfer path length of the transfer mechanism 50, effectively saving the movement time of the transfer mechanism 50, and avoiding excessive movement amplitude of the transfer mechanism 50 and / or the second receiving part 312, thereby improving the movement accuracy of the two docking. Furthermore, since the projection of the second interaction point O2 in the height direction coincides with the chamfering station A30, after the third receiving part 321 receives the silicon wafer from the first receiving part 311 at the second interaction point O2, it can move straight down to the chamfering station A30 to deliver the silicon wafer 200. This helps to shorten the movement path length of the third receiving part 321 and improve the positioning accuracy of the silicon wafer 200 at the chamfering station A30, so as to facilitate subsequent chamfering operations and avoid misplacement of the silicon wafer 200 due to excessive movement amplitude of the third receiving part 321.

[0069] It should be emphasized that there is no necessary order in the above steps. For example, steps "S1" and "S5" can be performed simultaneously. Thus, when the receiving part 51 carries the silicon wafer 200 to the first interaction point O1, the second receiving part 312 simultaneously carries the chamfered silicon wafer 200 to the first interaction point O1. This allows the transfer mechanism 50 and the first loading mechanism 31 to complete step "S6" at the first interaction point O1, further shortening the silicon wafer 200 transfer time and increasing the silicon wafer 200 transfer speed. Alternatively, in a cyclical operation, step S5 must be executed first, followed by steps S2, S6, S3, and S4 in sequence.

[0070] In one embodiment, a storage station A10 is provided, where both unprocessed silicon wafers 200 and processed silicon wafers 200 are stored.

[0071] Preferably, the silicon wafer 200 is returned to its original position at the storage station A10. In other words, the transfer mechanism 50 retrieves the unprocessed silicon wafer 200 from the storage station A10, and after the silicon wafer 200 has been processed, the transfer mechanism 50 transfers the silicon wafer 200 back to its original position in the storage station A10. This effectively prevents confusion in the retrieval and placement of the silicon wafer 200.

[0072] In one embodiment, see [reference] Figure 1 , Figure 2 as well as Figure 13 The processing technology also includes the following steps: S7: The transfer mechanism 50 transfers the silicon wafer 200 to be processed to the inspection station A20, and inspects the silicon wafer 200 at the inspection station A20 to determine the thickness, center, radius, and position of the positioning edge 201 of the silicon wafer. Then, it determines the translation distance and rotation angle of the silicon wafer 200 when it is mounted, that is, it determines the distance between the coordinates of the predetermined center and the actual center, and determines the angle difference between the predetermined positioning edge and the actual positioning edge. The silicon wafer 200 is translated and / or rotated to adjust the relative position between the silicon wafer and the inspection station A20 so that the silicon wafer 200 reaches the optimal mounting position.

[0073] In step “S1”, the transfer mechanism 50 transfers the silicon wafer 200 that has completed “S7” at the detection station A20 to the first interaction point O1 according to the detection completion signal, and interacts with the first loading mechanism 31 at the first interaction point O1.

[0074] Specifically, in one embodiment, such as Figure 13 As shown, a sharp angle 202 is formed at the junction of the positioning edge 201 and the circumference 203 of the silicon wafer 200. When the silicon wafer 200 is loaded onto the inspection station A20, it is positioned as follows: Figure 13 The positioning edge 201 shown is located directly below the center of the silicon wafer, serving as the ideal angle for wafer mounting. During adjustment, the position of the sharp corner 202 is used as a reference point. Therefore, at inspection station A20, the positions of the positioning edge 201 and the sharp corner 202 need to be detected, and the angle of the rotating silicon wafer's sharp corner 202 needs to be adjusted to position the positioning edge 201 at the ideal mounting angle. Inspection station A20 first detects and acquires data such as the thickness of the silicon wafer, its center, the positioning edge 201, and the positions of the sharp corners 202 at both ends of the positioning edge 201. Based on the detected data, it calculates the mounting angle and the required rotation angle θ of the positioning edge 201 to guide the silicon wafer 200 to rotate by a preset angle so that the silicon wafer 200 is in the optimal mounting position.

[0075] In this embodiment, refer to Figure 2 and Figure 4 The inspection station A20 and the storage station A10 are set up adjacent to each other. The transfer mechanism 50 picks up the silicon wafer 200 at the storage station A10 and transfers it to the inspection station A20 for positioning inspection. Since the time required for step "S7" on the silicon wafer 200 is short, usually only three seconds, the transfer mechanism 50 is set up adjacent to the inspection station A20 and the storage station A10. The transfer mechanism 50 picks up the silicon wafer 200 at the storage station A10 and transports it to the inspection station A20. At this time, the transfer mechanism 50 stops at the inspection station A20 for three seconds to take out the silicon wafer 200 that has completed the positioning inspection at the inspection station A20 and transfer it to the first interaction point O1. In this way, the transfer mechanism 50 can transfer the silicon wafer 200 at the inspection station A20 in a timely manner to prevent the inspection station A20 from being idle, and fully utilize the inspection efficiency of the inspection station A20 to improve the overall processing speed. If the silicon wafer 200 is transported to the inspection station A20 and then immediately transferred to another station to complete other work, it will result in an increased movement path of the transfer mechanism 50 and also cause the inspection station A20 to be idle, failing to fully utilize its processing speed to optimize the silicon wafer 200 delivery and transfer process.

[0076] Preferably, the testing station A20 and the storage station A10 are located in the same area, for example, on the same support platform.

[0077] In one embodiment, see [reference] Figure 4 A testing mechanism 20 is installed at testing station A20; step "S7" includes the following steps:

[0078] S701: Take a picture of the silicon wafer and calibrate the positioning edge 201, center and sharp corner 202 of the silicon wafer 200 in the picture, and obtain the angular position information of the positioning edge 201 and sharp corner 202.

[0079] S702: Calculate the angle that the positioning edge 201 should be adjusted based on the angle position information of the positioning edge 201;

[0080] S703: Adjust the position of the silicon wafer positioning edge 201 according to the angle to be adjusted so that the silicon wafer is in the optimal loading state.

[0081] In one embodiment, the processing technology further includes the following steps: S8: the transfer mechanism 50 sends the chamfered silicon wafer 200 into the cleaning station A40; S9: the cleaning station A40 cleans and spins dry the obtained silicon wafer 200 to remove the debris left on the silicon wafer 200 after chamfering, and to prevent the debris from scratching the finished silicon wafer 200.

[0082] In one embodiment, between steps "S8" and "S9", steps "S10" and "S11" are further included. In step "S10", the third feeding mechanism 41 has at least a fourth receiving part 411 and a fifth receiving part 412. The fourth receiving part 411 moves to the third interaction point O3 and hands over the chamfered silicon wafer 200 with the receiving part 51, and transfers the obtained silicon wafer 200 to the fourth interaction point O4. In step "S11", the fourth feeding mechanism... Structure 42 has a sixth receiving part 421. The sixth receiving part 421 runs to the fourth interaction point O4 and interacts with the fourth receiving part 411 to receive the beveled silicon wafer 200. After completing step "S11", steps "S8" and "S9" will be executed. The fourth feeding mechanism 42 transfers the obtained beveled silicon wafer 200 to the cleaning station A40 and hands it over to the cleaning station A40. The cleaning station A40 receives the silicon wafer 200 and cleans and spins dry the obtained silicon wafer 200.

[0083] Preferred, such as Figure 1 and Figure 10 As shown, along the height direction of the third feeding mechanism 41, the fourth receiving part 411 and the fifth receiving part 412 are located on the same straight line, and the projection of the second interaction point O2 along the height direction coincides with the cleaning station A40. Thus, after the receiving part 51 delivers the chamfered silicon wafer to the fourth receiving part 411, the receiving part 51 can move relative to the fifth receiving part 412 to dock with the fifth receiving part 412 to receive the cleaned silicon wafer 200 on the fifth receiving part 412. After receiving the silicon wafer, the fifth receiving part 412 can move straight down to the cleaning station A40 and deliver the obtained silicon wafer 200 to the cleaning station A40. The translation of the receiving part 51 relative to the fifth receiving part 412 can be understood as follows: the receiving part 51 remains stationary while the fifth receiving part 412 moves towards the receiving part 51; or the fifth receiving part 412 remains stationary while the receiving part 51 moves relative to the fifth receiving part 412; or both the fifth receiving part 412 and the receiving part 51 move in opposite directions. This reduces the range of motion of the fifth receiving part 412 and / or the receiving part 51, thus ensuring the accuracy of movement and the positioning accuracy of the silicon wafer 200, and preventing changes in the loading angle of the silicon wafer positioning edge 201. Furthermore, the straight downward movement of the fifth receiving part 412 can directly reach the cleaning station A40, further ensuring the positioning accuracy of the silicon wafer 200 during placement, and also shortening the transfer path of the silicon wafer 200 to the cleaning station A40, thereby improving the silicon wafer transfer efficiency.

[0084] In one embodiment, such as Figure 1As shown, the processing technology also includes the following steps: S12: The third loading mechanism 41 uses the fifth receiving part 412 to obtain the cleaned silicon wafer 200 at the cleaning station A40 and transfers the silicon wafer to the third interaction point O3. By obtaining and transferring the cleaned silicon wafer 200 through the third loading mechanism 41, the transfer mechanism 50 does not need to perform the transfer action. In this way, the transfer mechanism 50 can perform other actions at the same time to improve the overall silicon wafer 200 transfer efficiency.

[0085] In one embodiment, such as Figure 1 As shown, the processing technology also includes the following steps: S13: At the third interaction point O3, the fourth receiving part 411 receives the silicon wafer 200 transferred by the transfer mechanism 50; and after the transfer mechanism 50 interacts with the fourth receiving part 411, the transfer mechanism 50 receives the cleaned silicon wafer 200 at the fifth receiving part 412. With this configuration, after the transfer of the silicon wafer 200 is completed, the transfer mechanism 50 can directly receive the cleaned silicon wafer 200 transferred from the cleaning station A40 by the third feeding mechanism 41. In this way, the movement path of the transfer mechanism 50 is shortened, effectively reducing the transfer time of the silicon wafer 200 and reducing the number of transfers, thereby improving the overall efficiency of silicon wafer 200 processing and transfer.

[0086] In this embodiment, when the third feeding mechanism 41 performs step "S12", the fourth receiving part 411 and the fifth receiving part 412 move to the third interaction point O3 at the same time, the receiving part 51 moves to the third interaction point O3 simultaneously, so that the third feeding mechanism 41 and the transfer mechanism 50 dock without time difference, thereby improving the efficiency of docking and transferring the silicon wafer 200.

[0087] In one embodiment, such as Figure 1 As shown, the processing technology also includes the following steps: S14: The transfer mechanism 50 receives the silicon wafer 200 at the fifth receiving part 412 at the third interaction point O3 and transfers the obtained silicon wafer 200 to the storage station A10.

[0088] like Figure 1As shown, in this embodiment, multiple processing steps such as positioning detection, chamfering, cleaning, and spin drying of silicon wafer 200 are integrated into an automated production line process. By coordinating the transfer mechanism 50, the first feeding mechanism 31, the second feeding mechanism 32, the third feeding mechanism 41, and the fourth feeding mechanism 42, the coordination of the silicon wafer 200 picking, transferring, and unloading steps between each processing step is adjusted and optimized to improve the transfer efficiency of silicon wafer 200, shorten the movement path of the transfer mechanism 50, increase the transfer rate of silicon wafer 200, and enable each processing step and picking / unloading step to cooperate with each other, making full use of the equipment's processing speed to adjust the processing steps, thereby maximizing the equipment's processing efficiency. This effectively improves the processing efficiency of silicon wafer 200 and effectively reduces the movement amplitude and transfer path length of the transfer mechanism 50, the first feeding mechanism 31, the second feeding mechanism 32, the third feeding mechanism 41, and the fourth feeding mechanism 42, reducing the difficulty of transfer accuracy control.

[0089] In this application, one or more chamfering stations A30 are set up. Since the chamfering process takes longer than the positioning, inspection, cleaning and drying processes, if multiple chamfering stations A30 are set up, multi-threaded chamfering operations can be achieved. The inspection station A20 and the cleaning station A40 can be reasonably arranged to work with multiple chamfering stations A30 to improve the processing efficiency of silicon wafer 200 by a factor of two.

[0090] In one embodiment, when the chamfering station A30 is set at one or more locations, by repeating steps "S1", "S2" and "S3", un-chamfered silicon wafers 200 can be continuously provided to the chamfering station A30.

[0091] In this embodiment, as Figure 2 as well as Figures 5 to 9 As shown, chamfering station A30 has a chamfering mechanism 30, which includes a precision positioning detection module 34, a chamfering module 33, and a second rotary suction cup 35. The second rotary suction cup 35 is used to support and fix the silicon wafer 200, and can drive the silicon wafer 200 to rotate to adjust the position of the positioning edge 201. Step "S4" includes the following steps:

[0092] S401: The precision positioning detection module 34 detects and obtains the basic parameters of the silicon wafer 200 to be chamfered at the chamfering station A30; wherein, the basic parameters include the center position parameters, the contour parameters, the position parameters of the positioning edge 201, and the position parameters of the sharp corner 202;

[0093] S402: Based on the above basic parameters, the chamfering path parameters of the chamfering module 33, the rotation angle of the sharp corner 202 that needs to be adjusted, and the position parameters of the chamfering module 33 are calculated.

[0094] S403: Adjust the position of the chamfering mechanism 30 and the position of the silicon wafer positioning edge 201 according to the position parameters so that the positioning edge 200 to be chamfered corresponds to the chamfering mechanism 30;

[0095] S404: According to the chamfering route parameters, the chamfering mechanism 30 chamfers the silicon wafer 200 to be chamfered.

[0096] It is understandable that during the transfer process, the position of the positioning edge 201 and the angle of the sharp corner 202 of the silicon wafer 200 change, causing a deviation between the silicon wafer and the initial positioning data obtained from the detection station A20 when the wafer is mounted. If the chamfering mechanism 30 directly determines the chamfering path based on the position data of the positioning edge 201 detected at the detection station A20, the chamfering accuracy will be reduced. Therefore, in this embodiment, by performing a "secondary positioning detection," the position of the positioning edge 201 and the position of the sharp corner 202 of the silicon wafer 200 are re-determined, thereby adjusting the position of the chamfering module 33, the rotation angle θ of the positioning edge 201, and the chamfering path to improve the accuracy of the silicon wafer 200 chamfering process.

[0097] In this embodiment, refer to Figure 2 The following details the specific steps of processing silicon wafer 200 in the automatic silicon wafer chamfering process when the chamfering module 33 is set in two locations:

[0098] Repeating steps "S1", "S2", and "beveling loading", the silicon wafers 200 that have completed inspection are provided to the first beveling station A30 and the second beveling station A30 respectively for beveling processing. The transfer mechanism 50 repeatedly retrieves the silicon wafers 200 from the storage station A10 and transfers them to the inspection station A20. After receiving the inspection completion signal or reaching the preset time, the transfer mechanism 50 performs an action to transfer the silicon wafers 200 that have completed the positioning inspection to the first interaction point O1 of the first beveling station A30. The first loading mechanism 31 at the first beveling station A30 drives its first receiving part 311 to move to the first interaction point O1 and receive the transferred wafers. The silicon wafer 200 on the transfer mechanism 50, with the first receiving part 311 carrying the inspected silicon wafer 200, moves to the second interaction point O2. At this time, the second feeding mechanism 32 drives its third receiving part 321 to move to the second interaction point O2 and hand over to the first receiving part 311 to receive the inspected silicon wafer 200 and transfer it to the first chamfering station A30. The first chamfering station A30 performs precision positioning inspection and chamfering on the silicon wafer 200. After completing step "S1", the transfer mechanism 50 repeats step "S1" to transfer the silicon wafer 200 to the second chamfering station A30. The transfer steps are the same as described above and will not be repeated here.

[0099] Repeat steps “S1”, “S2” and “S3” again to provide the first chamfering station A30 with the silicon wafer 200 that has completed the inspection. Then execute steps “S5” and “S6”. The transfer mechanism 50 transfers the silicon wafer 200 that has completed the inspection to the first receiving part 311 of the first feeding mechanism 31, and receives the silicon wafer 200 that has completed the chamfering process on the second receiving part 312.

[0100] Next, steps “S9”, “S10” and “S8” are executed to transfer the silicon wafer 200 that has been chamfered at the first chamfering station A30 to the cleaning station A40 for cleaning;

[0101] Repeat steps “S1”, “S2” and “S3” again to provide the second chamfering station A30 with the silicon wafer 200 that has completed the inspection. Then execute steps “S5” and “S6”. The transfer mechanism 50 transfers the silicon wafer 200 that has completed the inspection to the first receiving part 311 of the first feeding mechanism 31, and receives the silicon wafer 200 that has completed the chamfering process on the second receiving part 312.

[0102] Next, steps “S9”, “S10”, “S11”, “S12”, and “S13” are executed to supply materials to cleaning station A40 and transfer the silicon wafers 200 that have been cleaned at cleaning station A40 to storage station A10. Specifically, transfer mechanism 50 transfers the silicon wafers 200 that have been chamfered at second chamfering station A30 to third interaction point O3. At the same time, the fifth receiving part 412 of the third feeding mechanism 41 picks up the silicon wafers 200 that have been cleaned and spun dry at cleaning station A40 and moves them to the third interaction point O3. Transfer mechanism 50 transfers the uncleaned silicon wafers 200 to the fourth receiving part 411 and receives the cleaned silicon wafers 200 from the fifth receiving part 412 and transfers them to storage station A10. The sixth receiving part 421 of the fourth feeding mechanism 42 connects with the fourth receiving part 411, receives the uncleaned silicon wafers 200 and transfers them to cleaning station A40 for cleaning and spun dry.

[0103] Then, the processing technology is repeated in a loop, continuously feeding, unloading and transferring the beveled silicon wafers 200 at the two beveling stations A30, so that the two beveling stations A30 can work together with the inspection station A20 and the cleaning station A40 to effectively improve the processing efficiency of the silicon wafers 200.

[0104] Of course, in other embodiments, the number of chamfering stations A30 is not limited to the two mentioned above, but can also be one or more. In this process, the steps to be executed need to be selected according to the time required for each station, and silicon wafers 200 should be reasonably provided and transferred to each chamfering station A30 to improve the transfer speed of silicon wafers 200, thereby improving the overall processing efficiency.

[0105] like Figures 2 to 5As shown, one embodiment of this application also provides an integrated automatic silicon wafer chamfering and cleaning device 100, which includes a chamfering mechanism 30 and a transfer mechanism 50. The transfer mechanism 50 has a receiving portion 51 for receiving silicon wafers 200. The chamfering mechanism 30 includes a chamfering module 33, a first feeding mechanism 31, and a second feeding mechanism 32. The chamfering module 33 is used to chamfer the silicon wafers 200. The first feeding mechanism 31 has a first receiving portion 311 and a second receiving portion 312. The first feeding mechanism 31 obtains the chamfered silicon wafers 200 from the chamfering module 33 through the second receiving portion 312 and transfers them to the first interaction point O1. Simultaneously, the receiving part 51 of the transfer mechanism 50 carries the un-beveled silicon wafer 200 to the first interactive station and transfers the un-beveled silicon wafer to the first receiving part 311. At the same time, the receiving part 51 receives the beveled silicon wafer 200 on the second receiving part 312. This effectively reduces the number of reciprocating movements of the transfer mechanism 50 and the silicon wafer transfer time, thereby enabling timely provision of silicon wafers to the beveling mechanism 30 and the transfer of beveled silicon wafers, thus effectively improving the overall silicon wafer processing efficiency.

[0106] Furthermore, in this embodiment, the chamfering module 33 in the chamfering mechanism 30 can be an existing device or apparatus. By integrating the first feeding mechanism 31, the second feeding mechanism 32, and the chamfering module 33 at the chamfering station A30, a chamfering mechanism 30 that can cooperate with the transfer mechanism 50 to receive the silicon wafer 200 is formed. This eliminates the need for significant changes to the production line and replacement of processing equipment, greatly reducing equipment replacement costs.

[0107] In one embodiment, the first receiving part 311 and the second receiving part 312 are located on the same straight line. After the transfer mechanism 50 delivers the silicon wafer to the first receiving part 311, it can move linearly to interact with the second receiving part 312. This helps to reduce the movement range of the transfer mechanism 50 and / or the first loading mechanism 31, and improves the positioning accuracy during silicon wafer delivery. Preferably, as Figure 9 As shown, the first receiving part 311 is located directly above the second receiving part 312. Thus, after the receiving part 51 of the transfer mechanism 50 moves above the first receiving part 311 and transfers the silicon wafer 200 it carries to the first receiving part 311, it can directly move down to the second receiving part 312 to receive the silicon wafer 200 that has already been processed at the pairing mechanism. This further shortens the movement path of the receiving part 51 and improves the efficiency of the transfer. Furthermore, this arrangement reduces the area occupied by the first feeding mechanism 31.

[0108] In one embodiment, such as Figure 3As shown, the chamfering mechanism 30 also includes a precision positioning detection module 34 and a second rotary suction cup 35. During the "chamfering" step, the second rotary suction cup 35 receives the silicon wafer 200 from the first receiving part 311; the precision positioning detection module 34 detects basic parameters such as the center, outline, and position parameters of the positioning edge 201 of the silicon wafer 200; the chamfering mechanism 30 calculates the position parameters and chamfering path data that the chamfering module 33 needs to adjust based on the basic parameters; the second rotary suction cup 35 rotates according to the preset rotation angle of the sharp corner 202 to adjust the position of the silicon wafer positioning edge 201; the chamfering module 33 performs translation and trajectory fine-tuning based on the required position parameters and the pre-calibrated trajectory to adjust its own position so that the chamfering module 33 matches the position of the silicon wafer; then the chamfering module 33 performs chamfering processing on the silicon wafer 200 according to the chamfering path.

[0109] In this embodiment, the precision positioning detection module 34 uses visual means for detection. Specifically, the precision positioning detection module 34 includes four cameras. Based on the principle that the center of a circle is determined by three points on a circle, three cameras calibrate at least three points on the silicon wafer, obtaining the coordinates of the three points. This allows the center coordinates and radius of the silicon wafer 200 to be fitted. The other camera calibrates the positioning edge 201 of the silicon wafer 200 and the two sharp corners 202 at the junction of the positioning edge 201 and the circumference of the silicon wafer 200, and measures the length of the positioning edge 201. This determines the center, outer contour, and positions of the positioning edge 201 and the two sharp corners 202 of the silicon wafer 200. In other embodiments, other methods can be used to determine the basic parameters of the silicon wafer 200, which are not limited here.

[0110] In this embodiment, the orientation of the positioning edges is consistent when the silicon wafer is mounted at the chamfering station A30. However, due to the change in position of the positioning edge 201 during the transfer of the silicon wafer 200, positioning deviations occur. If the chamfering process is directly determined based on the position data of the positioning edge 201 detected at the detection station A20, the chamfering accuracy will be reduced. Therefore, in this embodiment, the position of the positioning edge 201 of the silicon wafer 200 is re-determined through secondary positioning detection by the fine positioning detection module 34. The rotation angle of the silicon wafer positioning edge 201, the position of the chamfering module 33, and the chamfering path are adjusted accordingly. Specifically, assuming... Figure 13The positioning edge 201 shown is located directly below the center of the silicon wafer, serving as the ideal angle for mounting the silicon wafer 200. The precision positioning detection module 34 detects and identifies the coordinates of the two sharp corners 202 at both ends of the positioning edge 201. Based on the coordinates of the two sharp corners 202 and the determined center coordinates, the mounting angle θ of the silicon wafer 200 is calculated, and the silicon wafer 200 is rotated to adjust the position of the positioning edge 201. Furthermore, when the silicon wafer 200 is placed on the second rotating chuck 35, there is a slight deviation between its center and the predetermined center position. Therefore, it is necessary to adjust the relative position between the center of the silicon wafer 200 and the chamfering module 33 based on the actual center position and the predetermined center position. In this embodiment, the chamfering module 33 adjusts its position to adjust its relative position with the center of the silicon wafer 200. In other embodiments, the position of the silicon wafer 200 can also be adjusted by rotating and translating the second rotating chuck 35 to achieve the adjustment of the relative position between the chamfering module 33 and the center of the silicon wafer 200.

[0111] like Figures 2 to 5 As shown, the integrated automatic chamfering and cleaning equipment 100 for silicon wafers also includes a positioning and detection mechanism 20, a cleaning mechanism 40, and a transfer mechanism 50. The positioning and detection mechanism 20 is located at the detection station A20 and is used to detect parameters such as the contour and positioning edge 201 of the silicon wafer 200, and adjust the relative position of the silicon wafer 200 and the positioning and detection mechanism 20 according to these parameters to position the silicon wafer 200. The cleaning mechanism 40 is used to clean and dry the chamfered silicon wafer 200. The transfer mechanism 50 is used for loading, unloading, and transferring the silicon wafer 200 to each mechanism. Multiple mechanisms work together to achieve integrated automated processing of the silicon wafer 200, including positioning detection, chamfering, and cleaning. It can be understood that through the cooperation between each mechanism and the transfer mechanism 50, the transfer path of the transfer mechanism 50 is effectively shortened and the processing steps are optimized. The processing speed of each device is fully utilized to adjust the processing steps, maximizing the equipment's processing efficiency and thus effectively improving the processing efficiency of the silicon wafer 200.

[0112] Among them, the positioning detection mechanism 20 adopts the positioning detection equipment in the existing technology, which greatly reduces the equipment replacement cost.

[0113] In one embodiment, see [reference] Figures 10 to 12 The cleaning mechanism 40 includes a cleaning module 43, a third feeding mechanism 41, a fourth feeding mechanism 42, and a third rotary chuck 44 for receiving silicon wafers. The cleaning module 43 is used to clean and spin-dry the silicon wafers 200. The third feeding mechanism 41 works in conjunction with the transfer mechanism 50 to execute steps "S9", "S12" and "S13" to achieve efficient transfer of the silicon wafers 200 from the chamfering mechanism 30 to the cleaning mechanism 40 and the storage station A10.

[0114] In this embodiment, the cleaning module 43 can use existing cleaning equipment to save equipment costs. By integrating the third feeding mechanism 41 and the fourth feeding mechanism 42 into the cleaning module 43, a device that can cooperate with the transfer mechanism 50 to transfer the silicon wafer 200 is formed, thereby shortening the movement path of the transfer mechanism 50 and optimizing the steps of silicon wafer 200 transfer. This allows the third feeding mechanism 41 and the fourth feeding mechanism 42 to simultaneously perform operations to transfer the silicon wafer 200 while the transfer mechanism 50 is performing other actions, so as to fully cooperate with the transfer mechanism 50 and improve the overall silicon wafer 200 transfer and processing efficiency.

[0115] In one embodiment, see [reference] Figure 3 and Figure 4 The positioning detection mechanism 20 includes a vision detection module 21 and a first rotating suction cup 22. The silicon wafer 200 is disposed in the first rotating suction cup 22, and the first rotating suction cup 22 can drive the silicon wafer 200 to rotate. The vision detection module 21 detects the contour, center, positioning edge 201 and other parameter data of the silicon wafer 200 through vision. The positioning detection mechanism 20 calculates the relative position of the first rotating suction cup 22 and the silicon wafer 200 and the position data to be corrected based on the parameters, and controls the movement of the first rotating suction cup 22 to adjust the position of the positioning edge 201 of the silicon wafer 200.

[0116] Specifically, the vision inspection module 21 takes a picture of the silicon wafer 200, processes the picture, calibrates and calculates the positioning edge angle, and sends the required rotation angle to the first rotating suction cup 22. The first rotating suction cup 22 rotates by the specified angle according to the received data to adjust the position of the positioning edge 201 of the silicon wafer 200.

[0117] In existing fully automated chamfering equipment, multiple chamfering mechanisms are arranged in a straight line, significantly increasing the path for transferring silicon wafers. This severely impacts the wafer loading and unloading speed, leading to reduced wafer processing efficiency. In this embodiment, as... Figure 2 As shown, there are two chamfering stations A30, including a first chamfering station A30 and a second chamfering station A30, with one chamfering mechanism 30 at each station. Preferably, the chamfering mechanism 30 is arranged adjacent to the positioning and detection mechanism 20, and the cleaning mechanism 40 is arranged adjacent to the chamfering mechanism 30. The cleaning mechanism 40 and the positioning and detection mechanism 20 are located between the two chamfering mechanisms, and the positioning and detection mechanism 20, the chamfering mechanism 30, and the cleaning mechanism 40 are arranged circumferentially along the transfer mechanism 50. This makes the distance from the transfer mechanism 50 to each station balanced, which facilitates the transfer of the silicon wafer 200 by the transfer mechanism 50 to each station and makes it easier to control the movement path and time allocation of the transfer mechanism 50.

[0118] like Figure 9As shown, the first feeding mechanism 31 includes a first support 313 and a first boom 314. One end of the first boom 314 is connected to the first support 313 and can move relative to the first support 313, while the other end is provided with a first receiving part 311 and a second receiving part 312. When the first boom 314 moves relative to the first support 313, it drives the first receiving part 311 and the second receiving part 312 to move to the corresponding interaction point and receive the silicon wafer 200. Of course, in other embodiments, the specific structure of the first feeding mechanism 31 is not limited to the above description. For example, the first receiving part 311 and the second receiving part 312 can also be provided on a multi-degree-of-freedom robotic arm, and the movement of the robotic arm can drive the first receiving part 311 and the second receiving part 312 to receive the silicon wafer 200. The second feeding mechanism 32 includes a second support 322 and a second boom 323. One end of the second boom 323 is connected to the second support 322 and can translate or rotate relative to the second support 322, while the other end is provided with a third receiving part 321. In other embodiments, the specific structure of the second feeding mechanism 32 is not limited to that described above or shown in the figures.

[0119] like Figure 9 As shown, in one embodiment, the first support 313 and the second support 322 are integrated into one structure. In other words, the first feeding mechanism 31 and the second feeding mechanism 32 share a support, thereby enabling the first boom 314 and the second boom 323 to be integrated through the same support, simplifying the structure, reducing costs, and facilitating the integration and installation of the first feeding mechanism 31 and the second feeding mechanism 32 on paired mechanisms. In other embodiments, the first support 313 and the second support 322 can also be configured as separate structures, so that the first feeding mechanism 31 and the second feeding mechanism 32 can move independently and their relative positions can be adjusted. Thus, the positions of the first feeding mechanism 31 and the second feeding mechanism 32 can be adjusted according to site requirements.

[0120] like Figure 2 As shown, along the height direction of the first feeding mechanism 31, the projection of the second interaction point O2 coincides with the second rotating suction cup 35 of the chamfering mechanism 30. After the second feeding mechanism 32 obtains the silicon wafer 200 at the second interaction point O2, the third receiving part 321 moves directly downward so that the third receiving part 321 corresponds to the second rotating suction cup 35, and places the silicon wafer 200 on the third receiving part 321 into the second rotating suction cup 35, completing the transfer of the silicon wafer 200. In this way, the distance between the third receiving part 321 and the second rotating suction cup 35 is shortened, the path length of the silicon wafer 200 transfer is shortened, and the third receiving part 321 moves directly downward to the second rotating suction cup 35 to transfer the silicon wafer. The movement amplitude of the second feeding mechanism 32 is small, which helps to reduce the movement error of the second feeding mechanism 32, so that the silicon wafer 200 is accurately placed in the corresponding position of the second rotating suction cup 35, avoiding large errors in the placement position of the silicon wafer 200.

[0121] like Figure 8 and 9 As shown, in this embodiment, the first feeding mechanism 31 has an initial state and a transfer state. The initial state refers to the state when the first feeding mechanism 31 has not started transferring silicon wafers, and the transfer state refers to the state when the first feeding mechanism 31 moves and transfers silicon wafers. In the initial state, along the height direction of the first support 313, the projections of the first receiving part 311 and the second receiving part 312 coincide with the first interaction point O1. This can be understood as the first receiving part 311 and the second receiving part 312 themselves or their projections coinciding with the first interaction point O1. This setting helps to reduce the movement amplitude of the first boom 314 and avoid movement errors of the first receiving part 311 and the second receiving part 312, so that the first receiving part 311 and the second receiving part 312 can accurately dock with the receiving part 51. Of course, this setting also helps to shorten the path of the first receiving part 311 and the second receiving part 312 to the first interaction point O1, thereby shortening the movement time and improving the transfer efficiency and movement accuracy of the first feeding mechanism 31.

[0122] like Figure 10 As shown, the third feeding mechanism 41 includes a third support 413 and a third boom 414. One end of the third boom 414 is connected to the third support 413 and can move relative to the third support 413. The other end is provided with a fourth receiving part 411 and a fifth receiving part 412. When the third boom 414 moves relative to the third support 413, it drives the fourth receiving part 411 and the fifth receiving part 412 to move to the third interaction point O3 and receive the silicon wafer 200. Of course, in other embodiments, the specific structure of the third feeding mechanism 41 is not limited to the above description. The fourth feeding mechanism 42 includes a fourth support 422 and a fourth boom 423. One end of the fourth boom 423 is connected to the fourth support 422 and can translate or rotate relative to the fourth support 422. The other end is provided with a sixth receiving part 421. In other embodiments, the specific structure of the fourth feeding mechanism 42 is not limited to the above description or the figure shown.

[0123] like Figures 10 to 12As shown, in another embodiment, the projection of the sixth receiving part 421 coincides with the fourth interaction point O4 along the height direction of the fourth support 422. Thus, the fourth boom 423 can interact with the fourth receiving part 411 by moving up and down along the fourth support 422 without rotation. This eliminates the need for a rotating assembly to drive the fourth boom 423, simplifying the structure of the fourth feeding mechanism 42 and its movement path, and avoiding motion errors. Furthermore, in this embodiment, along the height direction of the fourth support 422, the projection of the fourth interaction point O4 coincides with the third rotating suction cup 44 at the cleaning mechanism 40. Thus, after the sixth receiving part 421 receives the silicon wafer 200, the fourth lifting arm 423 moves directly downwards along the fourth support 422, allowing the sixth receiving part 421 to place the silicon wafer 200 within the third rotating suction cup 44. This further shortens the path length for silicon wafer 200 transport, increases the transport speed of silicon wafer 200, and improves the movement accuracy of the fourth lifting arm 423, ensuring that the sixth receiving part 421 accurately places the silicon wafer on the third rotating suction cup 44, avoiding significant positional deviations of the silicon wafer. The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combinations of these technical features do not contradict each other, they should be considered within the scope of this specification.

[0124] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. Therefore, the patent protection scope of this application should be determined by the appended claims.

Claims

1. An automatic chamfering process for silicon wafers, characterized in that, The automated chamfering process for silicon wafers includes the following steps: The transfer mechanism has a receiving part that transfers the silicon wafer to be chamfered to the first interaction point; The first feeding mechanism has at least a first receiving part and a second receiving part. The first receiving part runs to the first interaction point, completes the silicon wafer handover with the transfer mechanism, and transfers the obtained silicon wafer to the second interaction point. The second feeding mechanism has a third receiving part, which runs to the second interaction point to receive the silicon wafer on the first receiving part; the projection of the second interaction point along the height direction of the second feeding mechanism coincides with the chamfering station, and after receiving the silicon wafer on the first receiving part, the third receiving part moves straight down to the chamfering station to deliver the obtained silicon wafer. The chamfering station performs chamfering on the obtained silicon wafers; The second receiving section acquires the beveling-completed silicon wafer at the beveling station and transfers the obtained silicon wafer to the first interaction point; At the first interaction point, the first receiving part receives the silicon wafer to be chamfered on the receiving part; wherein, the first receiving part and the second receiving part are located on the same straight line; after the receiving part interacts with the first receiving part, the receiving part is translated relative to the second receiving part to dock with the second receiving part, so as to receive the chamfered silicon wafer on the second receiving part and transfer the obtained silicon wafer; The processing technology also includes the following steps: The transfer mechanism delivers the chamfered silicon wafers to the cleaning station; The cleaning station cleans and spins dry the beveled silicon wafers. The third feeding mechanism has at least a fourth receiving part and a fifth receiving part. The fourth receiving part moves to the third interaction point and interacts with the receiving part to receive the chamfered silicon wafer, and then transfers the obtained silicon wafer to the fourth interaction point. The fourth feeding mechanism moves to the fourth interaction point and receives the chamfered silicon wafer on the fourth receiving part; In step "the transfer mechanism delivers the chamfered silicon wafer to the cleaning station", the fourth feeding mechanism transfers the obtained chamfered silicon wafer to the cleaning station and hands it over to the cleaning station. The cleaning station then cleans and spins dry the obtained silicon wafer.

2. The automatic chamfering process for silicon wafers according to claim 1, characterized in that, The processing technology also includes the following steps: The transfer mechanism transfers the silicon wafer to be processed to the inspection station, and performs positioning inspection on the silicon wafer at the inspection station; The transfer mechanism transfers the silicon wafer that has been inspected at the inspection station to the first interaction point.

3. The automatic chamfering process for silicon wafers according to claim 2, characterized in that, The inspection station is equipped with an inspection mechanism; the step "the transfer mechanism transfers the silicon wafer to be processed to the inspection station, and performs positioning inspection on the silicon wafer at the inspection station" includes the following steps: Photograph the silicon wafer and calibrate the silicon wafer positioning edges using the photographs to obtain the angle and position information of the positioning edges; The angle that the positioning edge should be adjusted is calculated based on the angle and position information of the positioning edge. Adjust the position of the silicon wafer positioning edge according to the angle to be adjusted.

4. The automatic chamfering process for silicon wafers according to claim 1, characterized in that, The chamfering station is set up in multiple locations, repeating the steps "The transfer mechanism has a receiving part, which transfers the silicon wafer to be chamfered to the first interaction point", "The first feeding mechanism has at least a first receiving part and a second receiving part. The first receiving part runs to the first interaction point, completes the silicon wafer handover with the transfer mechanism, and transfers the obtained silicon wafer to the second interaction point", and "The second feeding mechanism has a third receiving part. The third receiving part runs to the second interaction point to receive the silicon wafer on the first receiving part. The projection of the second interaction point along the height direction of the second feeding mechanism coincides with the chamfering station. After receiving the silicon wafer on the first receiving part, the third receiving part moves straight down to the chamfering station to deliver the obtained silicon wafer", continuously providing un-chamfered silicon wafers to the chamfering station.

5. The automatic chamfering process for silicon wafers according to claim 1, characterized in that, The chamfering station is equipped with a chamfering mechanism; the step "the chamfering station performs chamfering treatment on the obtained silicon wafer" includes the following steps: The basic parameters of the silicon wafer to be chamfered at the chamfering station are detected and obtained; wherein, the basic parameters include the center position parameter, the contour parameter, the positioning edge position parameter, and the sharp corner position parameter; The chamfering path parameters and position parameters of the chamfering mechanism are calculated based on the basic parameters. The position of the chamfering mechanism is adjusted according to the position parameters so that the positioning edge to be chamfered corresponds to the chamfering mechanism; Chamfering: According to the chamfering route parameters, the chamfering mechanism chamfers the silicon wafer to be chamfered.

6. The automatic chamfering process for silicon wafers according to claim 1, characterized in that, The processing technology also includes the following steps: The third feeding mechanism uses the fifth receiving part to obtain the cleaned silicon wafer at the cleaning station and transfers the silicon wafer to the third interaction point.

7. The automatic chamfering process for silicon wafers according to claim 6, characterized in that, The processing technology also includes the following steps: At the third interaction point, the fourth receiving part receives the silicon wafer transferred by the transfer mechanism, and after the transfer mechanism interacts with the fourth receiving part, the transfer mechanism receives the silicon wafer that has been cleaned on the fifth receiving part.

8. The automatic chamfering process for silicon wafers according to claim 7, characterized in that, The processing technology also includes the following steps: The transfer mechanism receives the silicon wafer at the fifth receiving section at the third interaction point and transfers the obtained silicon wafer to the storage station.

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