Photoelectric device and method for manufacturing the same

Abstract

The present invention provides a photoelectric device and a method for manufacturing the same. The photoelectric device includes a substrate, a heavily doped region, a quantum dot film and a transparent conductive film layer. The substrate has a first surface and a second surface opposite to each other. The heavily doped region is arranged in the substrate and exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material. The quantum dot film is arranged on the second surface of the substrate, and the material of the quantum dot film is a second conductive type material. The transparent conductive film layer is arranged on the side of the quantum dot film away from the substrate. The above-mentioned photoelectric device is provided with a quantum dot film on the second surface of the substrate, so that a heterojunction is formed between the quantum dot film and the heavily doped region. Based on the fact that the quantum dot film can be arranged to absorb light of a larger wavelength, the photoelectric device provided with the quantum dot film can detect light of a larger wavelength range, thereby improving the detection effect of the photoelectric device.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a photoelectric device and a manufacturing method thereof. Background Art

[0002] Single-photon avalanche diode (SPAD) is an important optoelectronic device that can detect single photons. With the rapid development of the silicon-based integrated circuit industry, single-photon avalanche diodes have gradually been manufactured based on silicon-based integrated circuit technology in recent years to form optoelectronic devices that can detect single photons. However, due to the limitations of silicon-based material properties, the wavelength that can be detected is generally less than 1.1μm, and it is not easy to detect longer wavelengths. Summary of the invention

[0003] According to a first aspect of an embodiment of the present invention, there is provided a photoelectric device, the photoelectric device comprising:

[0004] a substrate having opposing first and second surfaces;

[0005] A heavily doped region, disposed in the substrate and exposed from the first surface of the substrate, wherein the material of the heavily doped region is a first conductive type material;

[0006] A quantum dot film is disposed on the second surface of the substrate, and the material of the quantum dot film is a second conductive type material;

[0007] The transparent conductive film layer is arranged on a side of the quantum dot film away from the substrate.

[0008] In some embodiments, the optoelectronic device includes a plurality of heavily doped regions, and the plurality of heavily doped regions are arranged in an array.

[0009] In some embodiments, the optoelectronic device includes an isolation barrier disposed in the substrate, wherein the isolation barrier is disposed at a periphery of the heavily doped region.

[0010] In some embodiments, the isolation retaining wall comprises:

[0011] A first isolation barrier wall is disposed on the inner side of the first surface of the substrate and is located at the periphery of the heavily doped region;

[0012] The second isolation barrier wall is arranged on the inner side of the second surface of the substrate and is arranged opposite to the first isolation barrier wall.

[0013] In some embodiments, the optoelectronic device includes a diffusion protection zone, and the diffusion protection zone is located at a periphery of the heavily doped region.

[0014] In some embodiments, the material of the quantum dot film includes a combination of one or more of lead sulfide, lead selenide, lead telluride, mercury telluride, and mercury cadmium telluride.

[0015] In some embodiments, the optoelectronic device is a single photon avalanche diode.

[0016] According to a second aspect of an embodiment of the present invention, there is provided a method for manufacturing an optoelectronic device, the method comprising:

[0017] Providing a substrate; the substrate having a first surface and a second surface opposite to each other;

[0018] forming a heavily doped region in the substrate, wherein the heavily doped region is exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;

[0019] forming a quantum dot film on the second surface of the substrate, wherein the material of the quantum dot film is a second conductive type material;

[0020] A transparent conductive film layer is formed on the side of the quantum dot film facing away from the substrate.

[0021] In some embodiments, after providing a substrate and before forming a heavily doped region in the substrate, the method includes:

[0022] forming a first isolation barrier wall, wherein the first isolation barrier wall is located on the inner side of the first surface of the substrate and is located at the periphery of the heavily doped region to form a diffusion protection zone between two adjacent first isolation barrier walls;

[0023] Forming a heavily doped region in the substrate includes:

[0024] A heavily doped region is formed at the diffusion protection region, and the diffusion protection region is located at the periphery of the heavily doped region.

[0025] In some embodiments, after forming a heavily doped region in the substrate and before forming a quantum dot film on the second surface of the substrate, the method includes:

[0026] A second isolation barrier wall is formed in the substrate; the second isolation barrier wall is arranged on the inner side of the second surface of the substrate and is arranged opposite to the first isolation barrier wall.

[0027] In some embodiments, before providing the substrate, the method includes:

[0028] providing a substrate base plate;

[0029] The providing of the substrate comprises:

[0030] The substrate is formed on the substrate substrate.

[0031] In some embodiments, after forming a heavily doped region in the substrate and before forming a second isolation barrier in the substrate, the method includes:

[0032] The substrate is thinned to expose the substrate.

[0033] Based on the above technical solution, the above-mentioned optoelectronic device is provided with a quantum dot film on the second surface of the substrate, so that a heterojunction is formed between the quantum dot film and the heavily doped region. The quantum dot film can be arranged to absorb light of a larger wavelength, so that the optoelectronic device provided with the quantum dot film can detect light in a larger wavelength range, thereby improving the detection effect of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A cross-sectional view of a photoelectric device provided by one embodiment of the present invention;

[0035] Figure 2 A schematic diagram of the working principle of a photoelectric device provided by one embodiment of the present invention;

[0036] Figure 3 A cross-sectional view of another optoelectronic device provided by an embodiment of the present invention;

[0037] Figure 4 A flow chart of a method for manufacturing a photoelectric device provided by one embodiment of the present invention;

[0038] Figures 5 to 13 A manufacturing process diagram of a photoelectric device provided by one embodiment of the present invention;

[0039] Figures 14 to 20 A manufacturing process diagram of another optoelectronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0040] Here, exemplary embodiments will be described in detail, and examples thereof are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. The terms used in the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0041] Please refer to the following Figure 1-Figure 20 Various embodiments of the present invention are described in detail.

[0042] An embodiment of the present invention provides a photoelectric device, the photoelectric device comprising:

[0043] a substrate having opposing first and second surfaces;

[0044] A heavily doped region, disposed in the substrate and exposed from the first surface of the substrate, wherein the material of the heavily doped region is a first conductive type material;

[0045] A quantum dot film is disposed on the second surface of the substrate, and the material of the quantum dot film is a second conductive type material;

[0046] The transparent conductive film layer is arranged on a side of the quantum dot film away from the substrate.

[0047] The above-mentioned optoelectronic device is provided with a quantum dot film on the second surface of the substrate so that a heterojunction is formed between the quantum dot film and the heavily doped region. The quantum dot film can be arranged to absorb light of a larger wavelength, so that the optoelectronic device provided with the quantum dot film can detect light in a larger wavelength range, thereby improving the detection effect of the optoelectronic device.

[0048] The optoelectronic device mentioned in the present application may be a single photon avalanche diode (SPAD), or a device having the single photon avalanche diode (SPAD), such as a photodetector. The optoelectronic device mentioned in the present application may be a back-illuminated optoelectronic device.

[0049] The following is combined with Figures 1 to 3 The optoelectronic device provided in this application is described in detail.

[0050] Please refer to Figure 1 As shown, in some embodiments, the optoelectronic device 100 includes a substrate 11, a heavily doped region 40, a quantum dot film 60, and a transparent conductive film layer 70. The substrate 11 has a first surface 1001 and a second surface 1002 opposite to each other. The heavily doped region 40 is disposed in the substrate 11 and exposed from the first surface 1001 of the substrate 11, and the material of the heavily doped region 40 is a first conductive type material. The quantum dot film 60 is disposed on the second surface 1002 of the substrate 11, and the material of the quantum dot film 60 is a second conductive type material. The transparent conductive film layer 70 is disposed on the side of the quantum dot film 60 away from the substrate 11.

[0051] In this embodiment, the substrate 11 is a silicon-based substrate, including silicon material. The material of the substrate 11 here can be a first conductive type material.

[0052] The first conductivity type here is N type, and the second conductivity type is P type. The first conductivity type material is N type material, and the second conductivity type material is P type material. Accordingly, the substrate 11 is an N type substrate. The heavily doped region 40 is an N type doped region. The heavily doped region 40 can be formed by injecting N type doping material. Among them, the doping concentration of the N type doping material in the heavily doped region 40 is higher than the doping concentration of the N type doping material in the substrate 11.

[0053] In some embodiments, the material of the quantum dot film 60 is a combination of one or more of lead sulfide PbS, lead selenide PbSe, lead telluride PbTe, mercury telluride HgTe, and mercury cadmium telluride HgCdTe. The quantum dot film 60 can be set to a preset thickness according to specific circumstances so as to be able to absorb light with a wavelength greater than 1.1um.

[0054] Here, the quantum dot film 60 may cover the entire second surface of the substrate 11 .

[0055] It should be noted that, since the doping concentration in the substrate is generally low, the overall optoelectronic performance of the optoelectronic device using the second conductive type material as the substrate material has little effect on the optoelectronic device using the first conductive type material as the substrate 11. Therefore, in other embodiments, the substrate 11 is made of the second conductive type material.

[0056] Here, the material of the transparent conductive film layer 70 may be indium-doped tin oxide (ITO) or other similar materials.

[0057] Here, the heavily doped region 40 is used as a cathode and is used to connect to the positive electrode of the power supply during the operation of the optoelectronic device 100. The heavily doped region 40 can be connected to a connecting lead from the side away from the substrate 11 to connect to the positive electrode of the power supply. The transparent conductive film layer 70 is used as an anode and is used to connect to the negative electrode of the power supply during the operation of the optoelectronic device 100. Optionally, the transparent conductive film layer 70 can be connected to a connecting lead or other structure from the side away from the substrate 11 to connect to the negative electrode of the power supply.

[0058] In some embodiments, the optoelectronic device 100 has a plurality of photodiode units (such as single photon avalanche diode units). The plurality of photodiode units are arranged in an array. Accordingly, the optoelectronic device 100 includes a plurality of heavily doped regions 40. Each heavily doped region 40 forms a corresponding photodiode unit with a corresponding substrate portion and a corresponding quantum dot film 60 portion. The plurality of heavily doped regions 40 are arranged in an array.

[0059] Of course, in other embodiments, the optoelectronic device may also include a heavily doped region.

[0060] In some embodiments, the optoelectronic device 100 includes an isolation barrier disposed in the substrate 11 , wherein the isolation barrier is disposed at the periphery of the heavily doped region.

[0061] For example, Figure 1 As shown, the isolation barrier wall includes a first isolation barrier wall 20 and a second isolation barrier wall 50. The first isolation barrier wall 20 is disposed on the inner side of the first surface 1001 of the substrate 11 and is located at the periphery of the heavily doped region 40. The second isolation barrier wall 50 is disposed on the inner side of the second surface of the substrate 11 and is disposed opposite to the first isolation barrier wall 20.

[0062] Here, the first isolation barrier 20 is exposed from the first surface 1001 of the substrate 11. The second isolation barrier 50 is exposed from the second surface 1002 of the substrate 11. Of course, the isolation barrier may not be exposed. The first isolation barrier is disposed closer to the first surface of the substrate as a whole, and the second isolation barrier is disposed closer to the second surface of the substrate.

[0063] In this embodiment, the first isolation barrier 20 adopts a shallow trench isolation (STI) structure. The second isolation barrier 50 adopts a deep trench isolation (DTI) structure. The first isolation barrier 20 and the second isolation barrier 50 are spaced apart from each other at opposite ends. The first isolation barrier 20 is located in the substrate 11 and exposed from the first surface 1001. The first isolation barrier 20 specifically extends inwardly from the first surface 1001 of the substrate to a preset depth. The second isolation barrier 50 extends inwardly from the second surface 1002 of the substrate 11 to a preset depth.

[0064] Of course, in some other embodiments, the specific structures of the first isolation barrier and the second isolation barrier are not limited. For example, the first isolation barrier 20 and the second isolation barrier 50 can be connected as one to form an isolation barrier that penetrates the first surface 1001 and the second surface 1002 of the substrate 11.

[0065] It should be noted that, for the optoelectronic device 100 including a plurality of heavily doped regions 40 arranged in an array, the isolation barrier is also located between two adjacent heavily doped regions 40, isolating the optoelectronic device 100 into a plurality of photodiode units arranged in an array. For the optoelectronic device including one heavily doped region, the isolation barrier and the heavily doped region inside it and other structures form one photodiode unit accordingly.

[0066] It should also be noted that Figure 1 Only three heavily doped regions are shown, which can form three corresponding photodiode units. In fact, the optoelectronic device can include any other multiple heavily doped regions, such as 2, 4, 5... This application does not limit the number of heavily doped regions in the optoelectronic device and the corresponding photodiode units, which can be set according to specific circumstances.

[0067] In some embodiments, the optoelectronic device 100 includes a diffusion protection area 30, which is located at the periphery of the heavily doped region 40, such as Figure 1 The diffusion protection area 30 is shown to be located at the periphery of the doping area 40 .

[0068] Here, the diffusion protection zone 30 is located at the periphery of the heavily doped zone 40, which can be understood as the diffusion protection zone 30 is located at the periphery of the peripheral sidewall of the heavily doped zone 40. Here, the peripheral sidewall of the heavily doped zone 40 can be understood as the outer surface area except the side of the heavily doped zone 40 facing the quantum dot film 60 and the side away from the quantum dot film 60.

[0069] Of course, in other embodiments, the diffusion protection zone, in addition to being located at the periphery of the doped region 40 , may also cover part or all of the heavily doped region on the side facing the quantum dot film.

[0070] The material of the diffusion protection area 30 may be a first conductive type material. The doping concentration of the diffusion protection area 30 may be lower than the doping concentration of the heavily doped area 40, but higher than the doping concentration of the substrate 11, so as to protect the peripheral side of the heavily doped area 40 and prevent the heavily doped area 40 from being adversely affected by the photogenerated electrons that drift more around the heavily doped area 40.

[0071] It should be noted that in the optoelectronic device 100, in order to ensure that the photogenerated electrons generated in the quantum dot film 60 are smoothly transmitted to silicon and ultimately trigger an avalanche, the substrate 11 does not have another heavily doped region (P-type doped region) having a second conductive type material that cooperates with the heavily doped region 40 near the second surface 1002.

[0072] Please combine Figure 2 As shown, based on the above description of the optoelectronic device 100, the heavily doped region 40 of the optoelectronic device 100 forms a heterojunction with the corresponding substrate 11 portion and the quantum dot film 60 portion. Among them, the area indicated by the dotted frame is the depletion region, and the directed straight arrow in the region is the direction of the built-in electric field. When the optoelectronic device 100 is working, photons penetrate from the transparent conductive film layer 70 into the quantum dot film 60, and are absorbed by the quantum dot film 60 to generate photogenerated electrons and holes. Photogenerated carriers are affected by the built-in electric field in the depletion region, and the photogenerated electrons drift toward the side where the substrate 11 is located and enter the avalanche region near the heavily doped region 40, generating photon counts. The moving direction of the holes is opposite to that of the photogenerated electrons. The holes will drift toward the neutral region of the quantum dot film 60 (that is, the region of the quantum dot film 60 close to the transparent conductive film layer 70), and finally be compounded or collected by the transparent conductive film 60. Photons that are not absorbed by the quantum dot film 60 will continue to enter the substrate 11 and be absorbed by the substrate 11, thereby generating corresponding photon counts.

[0073] Since the quantum dot film 60 can be set to absorb a cutoff wavelength greater than 1.1um, the photoelectric device 100 can detect photons with a wavelength greater than 1.1um. Of course, since the substrate 11 can detect photons with a wavelength less than or equal to 1.1μm, the photoelectric device 100 has a wider detection wavelength range than a photoelectric device using only a silicon-based substrate, which is conducive to improving the detection effect of the photoelectric device.

[0074] Please refer to Figure 3As shown, an embodiment of the present invention further provides an optoelectronic device 200. The structure of the optoelectronic device 200 is substantially the same as that of the optoelectronic device 100. The same or similar parts can be referred to the above related descriptions, which will not be repeated here. The difference is that the diffusion protection zone 30 of the optoelectronic device 200 not only covers the peripheral side of the doped region 40, but also covers the side of the heavily doped region 40 facing the quantum dot film. Figure 3 As shown, the diffusion protection zone 30 covers the entire area of ​​the heavily doped region 40 except for the side away from the quantum dot film 60 .

[0075] Please refer to Figure 4 As shown, an embodiment of the present invention provides a method for manufacturing an optoelectronic device, the method comprising the following steps S101 to S107:

[0076] In step S101, a substrate is provided; the substrate has a first surface and a second surface opposite to each other;

[0077] In step S103, a heavily doped region is formed in the substrate, wherein the heavily doped region is exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material;

[0078] In step S105, a quantum dot film is formed on the second surface of the substrate, wherein the material of the quantum dot film is a second conductive type material;

[0079] In step S107, a transparent conductive film layer is formed on a side of the quantum dot film facing away from the substrate.

[0080] Please combine Figures 5 to 13 , Figures 5 to 13 FIG. 1 is a diagram of the manufacturing process of the optoelectronic device 100 .

[0081] In step S101 , a substrate 11 is provided.

[0082] In some embodiments, before step S101, the method includes the following step S1011:

[0083] In step S1011 , a base substrate is provided.

[0084] Please refer to Figure 5 As shown, a base substrate 10 is provided. The base substrate 10 has a first surface 101 and a second surface 102 which are opposite to each other. The base substrate 10 may be a structural layer doped with a first conductive type material, for example, silicon.

[0085] Accordingly, step S101 can be specifically implemented through the following step S1012:

[0086] In step S1012, the substrate is formed on the base substrate.

[0087] like Figure 6 As shown, a substrate 11 is formed on a substrate substrate 10. The substrate 11 may have the same conductivity type as the substrate substrate 10. That is, the material of the substrate 11 may also be a first conductivity type material. The same doping material may also be doped, such as doped silicon, to form a silicon-based substrate. Optionally, the doping concentration of the substrate 11 may be less than the doping concentration of the substrate substrate 10.

[0088] In some embodiments, after step S101 and before step S103, the method includes the following step S1021:

[0089] In step S1021 , a first isolation barrier 20 is formed. The first isolation barrier 20 is located inside the first surface of the substrate and outside the heavily doped region 40 .

[0090] like Figure 7 As shown, the first isolation barrier 20 may be exposed from the first surface 1001 of the substrate 11 .

[0091] The first isolation barrier 20 may adopt a shallow trench isolation structure. Specifically, a corresponding trench 21 may be firstly provided in the substrate 11, and then a dielectric material (such as oxide (such as silicon oxide), nitride (such as silicon nitride or silicon oxynitride), low-k dielectric and / or another suitable dielectric material) may be filled in the trench 21 to form the first isolation barrier 20.

[0092] After step S1021, the method includes the following step S1022:

[0093] In step S1022, a diffusion protection zone 30 is formed between two adjacent first isolation retaining walls 20, such as Figure 8 shown.

[0094] The diffusion protection zone 30 may be made of a first conductive type material.

[0095] Accordingly, if Fig. 9 As shown, in step S103, it may specifically include: forming a heavily doped region 40 at the diffusion protection region 30, wherein the diffusion protection region 30 is located at the periphery of the heavily doped region.

[0096] After the heavily doped region 40 is formed, the diffusion protection area 30 is located at the periphery of the heavily doped region 40. That is, the diffusion protection area 30 is located at the periphery of the peripheral sidewall of the heavily doped region 40. The peripheral sidewall of the heavily doped region 40 can be understood as the outer surface area except the side of the heavily doped region 40 facing the quantum dot film 60 and the side of the quantum dot film 60 facing away from the substrate 11.

[0097] The material of the diffusion protection area 30 may be a first conductive type material. The doping concentration of the diffusion protection area 30 may be lower than the doping concentration of the heavily doped area 40, but higher than the doping concentration of the substrate 11, so as to protect the peripheral side of the heavily doped area 40 and prevent the heavily doped area 40 from being adversely affected by the photogenerated electrons that drift more around the heavily doped area 40.

[0098] In some embodiments, after step S103 and before step S105, the method includes the following step S104:

[0099] In step S104 , a second isolation barrier 50 is formed in the substrate 11 ; the second isolation barrier 50 is disposed opposite to the first isolation barrier 20 .

[0100] like Fig.11 As shown, the second isolation barrier 50 may adopt a deep trench isolation structure, and the second isolation barrier 50 is located in the substrate 11. Specifically, a corresponding trench 51 may be firstly provided in the substrate 11, and then a dielectric material (such as oxide (such as silicon oxide), nitride (such as silicon nitride or silicon oxynitride), low-k dielectric and / or another suitable dielectric material) may be filled in the trench 51, so as to form the second isolation barrier 50.

[0101] The specific structures of the first isolation retaining wall 20 and the second isolation retaining wall 50 can be referred to the above related descriptions, which will not be elaborated here.

[0102] In some embodiments, after step S103 and before forming a second isolation barrier in the substrate, the method includes step S1040:

[0103] In step S1040, the base substrate is thinned to expose the substrate.

[0104] like Fig.10 As shown, the base substrate 10 is thinned to expose the substrate 11. The base substrate 10 can be thinned by mechanical grinding or mechanical peeling. The surface of the substrate 11 exposed after thinning is the second surface of the substrate 11.

[0105] It should be noted that during the thinning process, only the base substrate 10 may be thinned and removed, or the portion of the substrate 11 close to the base substrate may be removed together, so that the substrate 11 meets the thickness requirement. Whether the base substrate 10 may be removed alone or the substrate 11 may be thinned together may be selected adaptively according to the specific situation.

[0106] In step S105, a quantum dot film 60 is formed on the second surface 1002 of the substrate 11. Fig.12 The material of the quantum dot film 60 is the second conductive type material.

[0107] In some embodiments, the material of the quantum dot film 60 is a combination of one or more of lead sulfide PbS, lead selenide PbSe, lead telluride PbTe, mercury telluride HgTe, and mercury cadmium telluride HgCdTe. The quantum dot film 60 can be set to a preset thickness according to specific circumstances so as to be able to absorb light with a wavelength greater than 1.1um.

[0108] The quantum dot film 60 can be formed by spin coating, inkjet printing, scraping, etc. Here, the quantum dot film 60 can cover the entire second surface 1002 of the substrate 11. The specific thickness of the quantum dot film 60 can be set according to the specific material and the wavelength to be absorbed.

[0109] It should be noted that the first conductivity type here is N-type, and the second conductivity type is P-type. The first conductivity type material is N-type material, and the second conductivity type material is P-type material. Accordingly, the substrate 11 is an N-type substrate. The heavily doped region 40 is an N-type doped region. The heavily doped region 40 can be formed by injecting N-type doping material. Among them, the doping concentration of the N-type doping material in the heavily doped region 40 is higher than the doping concentration of the N-type doping material in the substrate 11.

[0110] like Fig.13 As shown, in step S107 , a transparent conductive film layer 70 is formed on the side of the quantum dot film 60 facing away from the substrate 11 .

[0111] The transparent conductive film layer 70 is deposited on the surface of the quantum dot film 60 by magnetron sputtering or the like. The material of the transparent conductive film layer 70 can be indium-doped tin oxide (ITO) or other similar materials.

[0112] Please combine Figures 14 to 20 , Figures 14 to 20 The photoelectric device 100' is a manufacturing process diagram. Figures 5 to 13 The manufacturing process of the optoelectronic device 100 is roughly the same, and the same and similar points can be referred to the above related description. The difference is that the optoelectronic device 100' directly provides a substrate 11', and operates directly in the substrate 10' without the support of the substrate. Accordingly, the subsequent thinning process of the substrate is not set, and after the heavily doped region 40 is formed in the substrate 10', the corresponding step of setting the second isolation barrier 50 can be directly entered. The substrate 11' can be similar to the above-mentioned substrate 11.

[0113] In the present application, the structural embodiments and method embodiments may complement each other if they do not conflict.

[0114] Those skilled in the art will understand that the accompanying drawings are only schematic diagrams of a preferred embodiment, and the modules or processes in the accompanying drawings are not necessarily necessary for implementing the present invention. The above description is only a specific implementation of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed by the present invention, which should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A photoelectric device, characterized in that: The optoelectronic device comprises: A substrate, the substrate having a first surface and a second surface opposite to each other; the substrate is a silicon-based substrate, the material of the substrate is a first conductive type material, and the first conductive type material is an N-type material; A heavily doped region is provided in the substrate and exposed from the first surface of the substrate, wherein the material of the heavily doped region is a first conductive type material; the heavily doped region serves as a cathode and is used to connect to a positive electrode of a power source during operation of the photoelectric device; A quantum dot film is disposed on the second surface of the substrate and contacts the second surface of the substrate, wherein the material of the quantum dot film is a second conductive type material, and the second conductive type material is a P-type material; the heavily doped region forms a heterojunction with the corresponding substrate portion and quantum dot film portion; A transparent conductive film layer is provided on the side of the quantum dot film away from the substrate; the transparent conductive film layer is used as an anode and is connected to the negative electrode of a power source during the operation of the optoelectronic device; The optoelectronic device is a single photon avalanche diode; The optoelectronic device includes a diffusion protection zone, which is located at least at the periphery of the heavily doped zone; the material of the diffusion protection zone is a first conductive type material, and the doping concentration of the diffusion protection zone is lower than the doping concentration of the heavily doped zone and higher than the doping concentration of the substrate.

2. The optoelectronic device according to claim 1, characterized in that The optoelectronic device includes a plurality of heavily doped regions, and the plurality of heavily doped regions are arranged in an array.

3. The optoelectronic device according to claim 1, characterized in that The optoelectronic device comprises an isolation barrier wall arranged in the substrate, and the isolation barrier wall is arranged at the periphery of the heavily doped region.

4. The optoelectronic device according to claim 3, characterized in that The isolation retaining wall comprises: A first isolation barrier wall is disposed on the inner side of the first surface of the substrate and is located at the periphery of the heavily doped region; The second isolation barrier wall is arranged on the inner side of the second surface of the substrate and is arranged opposite to the first isolation barrier wall.

5. The optoelectronic device according to claim 1, wherein: The material of the quantum dot film includes a combination of one or more of lead sulfide, lead selenide, lead telluride, mercury telluride and mercury cadmium telluride.

6. A method for manufacturing a photoelectric device, characterized in that: The method comprises: Providing a substrate; the substrate has a first surface and a second surface opposite to each other; the substrate is a silicon-based substrate, the material of the substrate is a first conductive type material, and the first conductive type material is an N-type material; A heavily doped region is formed in the substrate, the heavily doped region is exposed from the first surface of the substrate, and the material of the heavily doped region is a first conductive type material; the heavily doped region serves as a cathode, and is used to connect to the positive electrode of a power source during the operation of the photoelectric device. A quantum dot film is formed on the second surface of the substrate and contacts the second surface of the substrate, wherein the material of the quantum dot film is a second conductive type material, which is a P-type material; the heavily doped region forms a heterojunction with the corresponding substrate portion and quantum dot film portion; A transparent conductive film layer is formed on the side of the quantum dot film facing away from the substrate; the transparent conductive film layer is used as an anode and is connected to the negative electrode of a power source during the operation of the optoelectronic device; The optoelectronic device is a single photon avalanche diode; After providing the substrate and before forming the heavily doped region in the substrate, the method further includes: A diffusion protection zone is formed, wherein the diffusion protection zone is at least located at the periphery of the heavily doped zone; the material of the diffusion protection zone is a first conductive type material, and the doping concentration of the diffusion protection zone is lower than the doping concentration of the heavily doped zone and higher than the doping concentration of the substrate.

7. The method for manufacturing a photoelectric device according to claim 6, wherein: After providing a substrate and before forming a heavily doped region in the substrate, the method includes: A first isolation barrier is formed, wherein the first isolation barrier is located inside the first surface of the substrate and outside the heavily doped region.

8. The method for manufacturing a photoelectric device according to claim 7, characterized in that: After forming the first isolation barrier, the method includes A diffusion protection zone is formed between two adjacent first isolation retaining walls; Forming a heavily doped region in the substrate includes: A heavily doped region is formed at the diffusion protection region, and the diffusion protection region is located at the periphery of the heavily doped region.

9. The method for manufacturing a photovoltaic device as claimed in claim 7 or 8, characterized in that: After forming a heavily doped region in the substrate and before forming a quantum dot film on the second surface of the substrate, the method includes: A second isolation barrier wall is formed in the substrate; the second isolation barrier wall is arranged on the inner side of the second surface of the substrate and is arranged opposite to the first isolation barrier wall.

10. The method for manufacturing a photoelectric device according to claim 9, characterized in that: Prior to providing the substrate, the method includes: providing a substrate base plate; The providing of the substrate comprises: The substrate is formed on the substrate substrate.

11. The method for manufacturing a photoelectric device according to claim 10, wherein: After forming a heavily doped region in the substrate and before forming a second isolation barrier in the substrate, the method includes: The substrate is thinned to expose the substrate.

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