Testing device and its picking module

Abstract

A testing device and its component picking module. The testing device includes a testing stage and a component picking module. The testing stage includes a testing area and a plurality of terminals. These terminals are distributed within the testing area. The component picking module includes a moving arm, an air passage group, and a pressure buffer portion. The moving arm can move towards the direction of the testing area. The pressure buffer portion includes an elastic pad body and a plurality of through holes. The elastic pad body is connected to the bottom of the moving arm. A flat surface of the elastic pad body is used to contact a semiconductor component. The through holes are distributed on the flat surface and are connected to the air passage group for the semiconductor component to be vacuum adsorbed onto the flat surface. When the pressure buffer portion presses the semiconductor component onto these terminals, the semiconductor component is electrically connected to these terminals. Through the above structure, the testing device can slow down the warping of the semiconductor component and reduce the chance of cracking or fissuring when the semiconductor component is being pressed down, so that the semiconductor component is not easily damaged.

Description

Technical Field

[0001] The present invention relates to a testing device, and more particularly to a testing device that picks up semiconductor components through vacuum suction. Background Art

[0002] In recent years, with the rapid development of electronic technology and the emergence of high-tech electronic industries, more user-friendly and better-functioning electronic products have been continuously introduced and designed towards the trend of being light, thin, short, and small.

[0003] However, when a semiconductor component is pressed down to a test area for testing operations, since thinner semiconductor components may have a lower tolerance to pressure, during the error detection process, the above-mentioned semiconductor components are prone to breakage or cracking, and even affect the error detection results.

[0004] It can be seen that the above method still has inconveniences and defects and needs to be further improved. Therefore, how to effectively solve the above inconveniences and defects is one of the important research and development topics at present and has also become the goal that needs to be improved in the current related fields. Summary of the Invention

[0005] To this end, the present invention provides a testing device and its component picking module to solve the difficulties mentioned in the above prior art.

[0006] An embodiment of the present invention provides a testing device. The testing device includes a vacuum pump device, a test stage, and a component picking module. The test stage includes a test area and a plurality of terminals. These terminals are arranged in the test area. The component picking module includes a moving arm, an air passage group, and a pressure buffer. The moving arm is used to move towards the test area. The air passage group is located inside the moving arm and is respectively connected to the vacuum pump device and the bottom of the moving arm. The pressure buffer includes an elastic pad and a plurality of through holes. The elastic pad is located at the bottom of the moving arm. The elastic pad has a flat surface. The flat surface is used to contact a semiconductor component. These through holes are distributed on the flat surface of the elastic pad and are connected to the air passage group for the vacuum pump device to vacuum-adsorb the semiconductor component on the flat surface. When the pressure buffer presses the semiconductor component onto these terminals in the test area, the semiconductor component is electrically connected to these terminals.

[0007] According to one or more embodiments of the present invention, in the above testing device, the flat surface of the elastic pad has a geometric pattern. These through holes are symmetrically arranged and are offset from the centroid of the geometric pattern.

[0008] According to one or more embodiments of the present invention, in the above testing device, the flat surface of the elastic pad is a rectangle, and these through holes are respectively arranged at a plurality of corner portions of the rectangle.

[0009] According to one or more embodiments of the present invention, in the above-mentioned testing device, the elastic pad body includes a rubber pad, a silica gel pad or an indium sheet.

[0010] According to one or more embodiments of the present invention, in the above-mentioned testing device, each through hole includes one of a round hole and a long and narrow groove.

[0011] According to one or more embodiments of the present invention, in the above-mentioned testing device, each through hole has a straight inner wall or a spiral inner wall.

[0012] According to one or more embodiments of the present invention, in the above-mentioned testing device, when the pressure buffer presses the semiconductor element down into the testing area, the pressures exerted by the pressure buffer and these terminals on two opposite faces of the semiconductor element are substantially the same.

[0013] According to one or more embodiments of the present invention, in the above-mentioned testing device, the testing module further includes a wiring board, a memory unit and a plurality of probe parts. These probe parts are distributed on the moving arm, and are respectively welded to one side of the wiring board for respectively abutting against one side of the semiconductor element. The memory unit is welded to the other side of the wiring board and is electrically connected to these probe parts for testing this semiconductor element.

[0014] According to one or more embodiments of the present invention, in the above-mentioned testing device, the semiconductor element includes a substrate, a bare die unit, a plurality of solder balls and a plurality of contacts. These solder balls are located on one side of the substrate for respectively contacting these terminals. These contacts are located on the other side of the substrate for contacting these probe parts. The bare die unit is located on the other side of the substrate, between these contacts, for contacting the flat surface of the elastic pad body. The area of the bare die unit is not larger than the area of the flat surface of the elastic pad body.

[0015] According to one or more embodiments of the present invention, in the above-mentioned testing device, the airway group includes a main pipeline and a plurality of sub-pipelines. These sub-pipelines are jointly connected to the main pipeline and are respectively directly docked to these through holes.

[0016] One embodiment of the present invention provides a picking module. The picking module includes a moving arm, an airway group and a pressure buffer. The airway group is located inside the moving arm and is connected to the bottom of the moving arm for connecting a vacuum pump device. The pressure buffer includes an elastic pad body and a plurality of through holes. The elastic pad body is connected to the bottom of the moving arm. The elastic pad body has a flat surface. The flat surface is used to contact a semiconductor element. These through holes are distributed on the flat surface of the elastic pad body and are connected to the airway group for the vacuum pump device to vacuum-adsorb the semiconductor element on the flat surface.

[0017] According to one or more embodiments of the present invention, in the above-mentioned picking module, the flat surface of the elastic pad body has a geometric pattern. These through holes are symmetrically arranged and are offset from the centroid of the geometric pattern.

[0018] According to one or more embodiments of the present invention, in the above-mentioned picking module, the flat surface of the elastic pad body is a rectangle, and these through holes are respectively arranged at a plurality of corner portions of the rectangle.

[0019] According to one or more embodiments of the present invention, in the above-mentioned picking module, the elastic pad body includes a rubber pad, a silica gel pad or an indium sheet.

[0020] According to one or more embodiments of the present invention, in the above-mentioned picking module, each through hole includes one of a round hole and a long and narrow groove.

[0021] According to one or more embodiments of the present invention, in the above-mentioned picking module, each through hole has a straight inner wall or a spiral inner wall.

[0022] According to one or more embodiments of the present invention, the above-mentioned picking module further includes a wiring board, a memory unit and a plurality of probe parts. These probe parts are distributed on the moving arm and are respectively welded to one side of the wiring board for respectively abutting against one side of the semiconductor element. The memory unit is welded to the other side of the wiring board and is electrically connected to these probe parts for testing the semiconductor element.

[0023] According to one or more embodiments of the present invention, in the above-mentioned picking module, the air duct group includes a main duct and a plurality of sub ducts. These sub ducts are jointly connected to the main duct and are respectively directly connected to these through holes.

[0024] Thus, through the above-mentioned architectures of the various embodiments, the present invention can slow down the warping of the semiconductor element when the semiconductor element is pressed down to the test area, reduce the chance of the semiconductor element being cracked or damaged due to compression, so that the semiconductor element is not easily damaged.

[0025] The above is only used to elaborate on the problems to be solved by the present invention, the technical means for solving the problems, and the effects produced thereby. The specific details of the present invention will be introduced in detail in the following embodiments and related drawings. Brief Description of the Drawings

[0026] To make the above and other objects, features, advantages and embodiments of the present invention more obvious and understandable, the description of the accompanying drawings is as follows:

[0027] Figure 1 Is an exploded view of a test device according to an embodiment of the present invention;

[0028] Figure 2 Is Figure 1 The combined view of the test device;

[0029] Figure 3 Is Figure 1Front view of the elastic pad of the pick-up module;

[0030] Figure 4 is Figure 3 Partial cross-sectional view of the through-hole of the elastic pad of the pick-up module along line AA;

[0031] Figure 5 Front view of an elastic pad according to an embodiment of the present invention;

[0032] Figure 6 Longitudinal cross-sectional view of the through-hole of the elastic pad of the pick-up module according to an embodiment of the present invention;

[0033] Figure 7 Schematic diagram of a test system according to an embodiment of the present invention;

[0034] Figure 8 is Figure 7 Operation diagram of the use of the test system;

[0035] Figure 9 Schematic diagram of the sound pattern generation unit and the sound conduction group of a crackling sound monitoring device according to an embodiment of the present invention; and

[0036] Figure 10 Flow chart of a crackling sound monitoring method according to an embodiment of the present invention.

[0037]

Symbol description

[0038] 1: Test system

[0039] 10: Test device

[0040] 50: Crackling sound monitoring device

[0041] 100: Vacuum pump equipment

[0042] 110: Pipeline

[0043] 200: Test stage

[0044] 210: Base body

[0045] 211: Test area

[0046] 212: Outer wall

[0047] 220: Circuit board

[0048] 230: Terminal

[0049] 300: Pick-up module

[0050] 310: Moving arm

[0051] 311: Top

[0052] 312: Bottom

[0053] 313: Outer wall

[0054] 320: Airway group

[0055] 321: Main pipeline

[0056] 322: Sub-pipeline

[0057] 323: Configuration groove

[0058] 330: Pressure buffer part

[0059] 340, 340A, 340B: Elastic gasket

[0060] 341: Configuration surface

[0061] 342: Flat surface

[0062] 350: Through hole

[0063] 351: Centroid

[0064] 352: Corner part

[0065] 353: Axis

[0066] 354: Round hole

[0067] 355: Straight inner wall

[0068] 356: Narrow and long groove

[0069] 357: Spiral inner wall

[0070] 360: Wiring board

[0071] 361: Bottom surface

[0072] 362: Top surface

[0073] 363: Through hole

[0074] 370: Memory unit

[0075] 380: Probe part

[0076] 390: Solder

[0077] 391: Air gap

[0078] 400: Semiconductor unit

[0079] 410: Substrate

[0080] 411: First surface

[0081] 412: Second surface

[0082] 420: Die unit

[0083] 430: Solder ball

[0084] 440: Contact point

[0085] 500: Database unit

[0086] 600: Voiceprint generation unit

[0087] 610: Sound chamber

[0088] 620: MEMS chip

[0089] 630: Fixed electrode plate

[0090] 640: Vibrating electrode diaphragm

[0091] 700: Sound conduction group

[0092] 710: Solid-state conduction oscillator

[0093] 720: Sound guide tube

[0094] 730: Sound insulation inner tube

[0095] 731: Enclosed space

[0096] 732: Sound transmission channel

[0097] 740: Sound insulation outer tube

[0098] 750: Porous sound-absorbing material

[0099] 760: First fixing ring

[0100] 761: Opening

[0101] 770: Second fixing ring

[0102] 780: Diaphragm

[0103] 810: Detector

[0104] 820: Enable switch

[0105] 830: Alarm unit

[0106] 900: Processing unit

[0107] 901~905: Steps

[0108] AA: Line segment

[0109] Y, Z: Axes

[0110] V: Vacuum suction Detailed implementation method

[0111] The following will disclose multiple embodiments of the present invention with the accompanying drawings. For the sake of clear illustration, many practical details will be described together in the following narrative. However, those skilled in the art should understand that in some embodiments of the present invention, these practical details are not necessary and thus should not be used to limit the present invention. In addition, for the purpose of simplifying the drawings, some well-known conventional structures and elements will be shown in a simple schematic manner in the drawings. Additionally, for the convenience of readers, the dimensions of each element in the drawings are not drawn to actual scale.

[0112] Figure 1 An exploded view of a test device 10 according to an embodiment of the present invention. Figure 2 is Figure 1 a combined view of the test device 10. As Figures 1 to 2 shown, the test device 10 includes a vacuum pump device 100, a test stage 200, and a pick-up module 300. The test stage 200 includes a base 210, a circuit board 220, and a plurality of terminals 230. The base 210 is located on the circuit board 220, and the base 210 has a test area 211. These terminals 230 are arranged at intervals in a horizontal direction (such as the Y-axis) within the test area 211 and are respectively electrically connected to the circuit board 220 through the base 210. For example, each terminal 230 is, for example, a pogo pin.

[0113] The pick-up module 300 includes a moving arm 310, an air duct group 320, and a pressure buffer portion 330. The moving arm 310 can move in the direction of the test area 211. For example, the moving arm 310 can move downward in the direction of the test area 211 through the drive of a mechanism or a cylinder. More specifically, the moving arm 310 can move along a vertical direction (such as the Z-axis) to the test area 211 of the test stage 200 or away from the test area 211 of the test stage 200. The pressure buffer portion 330 includes an elastic pad body 340 and a plurality of through holes 350. The elastic pad body 340 is flat, and the elastic pad body 340 includes a placement surface 341 and a flat surface 342 that face each other. The placement surface 341 of the elastic pad body 340 is fixedly connected to the bottom 312 of the moving arm 310. These through holes 350 are distributed at intervals on the elastic pad body 340. Each through hole 350 penetrates the elastic pad body 340 and respectively connects the placement surface 341 and the flat surface 342 of the elastic pad body 340. The air duct group 320 is located within the moving arm 310 and is respectively connected to the vacuum pump device 100 and the bottom 312 of the moving arm 310. One end of the air duct group 320 is connected to the vacuum pump device 100, and the other end is connected to these through holes 350 through the bottom 312 of the moving arm 310. Therefore, through the vacuum suction force V provided by the vacuum pump device 100, the vacuum pump device 100 can vacuum-adsorb a semiconductor element 400 (such as a semiconductor component) onto the flat surface 342 through these through holes 350 of the elastic pad body 340.

[0114] Therefore, when the moving arm 310 moves to the semiconductor element 400, the moving arm 310 directly contacts one side of the semiconductor element 400 flatly through the flat surface 342 of the elastic pad 340, and the semiconductor element 400 is sucked by the vacuum suction V in the through hole 350. In this way, the moving arm 310 can pick up the semiconductor element 400 and move the semiconductor element 400 above the test area 211; then, when the moving arm 310 presses the semiconductor element 400 into the test area 211 in the vertical direction (such as the Z-axis), the other side of the semiconductor element 400 can be electrically connected to these terminals 230 in the test area 211 respectively for testing operations.

[0115] In this way, through the above structure, this embodiment can slow down the warping generated by the semiconductor element during the test of the semiconductor element, and reduce the chance of the semiconductor element being cracked or cracked due to compression.

[0116] It should be understood that since the elastic pad 340 has an airtight property, external air will not penetrate between the flat surface 342 of the elastic pad 340 and the semiconductor element 400; since the elastic pad 340 has a compressible property, when the semiconductor element 400 is pressed between the elastic pad 340 and these terminals 230, through the compression of the elastic pad 340, the pressure buffer portion 330 can slow down the pressure received by the semiconductor element 400, thereby reducing the chance of the semiconductor element 400 being cracked; since the elastic pad 340 has a soft property, the flat surface 342 of the elastic pad 340 will not damage the surface of the semiconductor element 400. For example, the elastic pad 340 includes materials such as a rubber pad, a silicone pad or an indium sheet. However, the present invention is not limited thereto.

[0117] Furthermore, as Figure 1 and Figure 2 shown, the picking module 300 further includes a wiring board 360, a memory unit 370 and a plurality of probe portions 380. These probe portions 380 are distributed on the moving arm 310 and are respectively welded to the bottom surface 361 of the wiring board 360 for respectively abutting against one surface of the semiconductor element 400, and the pressure buffer portion 330 is located between these probe portions 380. The memory unit 370 is welded to the top surface 362 of the wiring board 360 and is electrically connected to these probe portions 380 for testing this semiconductor element 400. More specifically, the memory unit 370 is welded to the top surface 362 of the wiring board 360 through a plurality of solders 390, so that there is an air gap 391 between the memory unit 370, the wiring board 360 and these solders 390. For example, the memory unit 370 is a Double Data Rate (DDR) memory unit. However, the present invention is not limited thereto.

[0118] In addition, the air duct group 320 includes a main duct 321 and a plurality of sub-ducts 322. These sub-ducts 322 are jointly connected to the main duct 321 and are respectively directly connected to these through holes 350. In this embodiment, each sub-duct 322 is in an L shape, with one end exposed at the bottom 312 of the moving arm 310 and the other end connected to the main duct 321. The wiring board 360 also has a through hole 363. The through hole 363 is located between the main duct 321 and the above-mentioned air gap 391, is coaxially aligned with the main duct 321, and is respectively connected to the main duct 321 and the above-mentioned air gap 391.

[0119] Furthermore, the air duct group 320 further includes a configuration groove 323. The configuration groove 323 is recessed in the top 311 of the moving arm 310 opposite to the pressure buffer portion 330 for accommodating the above-mentioned wiring board 360, memory unit 370 and probe portion 380. In addition, the configuration groove 323 is also connected to the vacuum pump device 100 through a pipeline 110. Thus, when the vacuum pump device 100 starts to provide a vacuum suction V, that is, the air in the air duct group 320 starts to return to the vacuum pump device 100 in sequence through the through hole 363 of the wiring board 360, the above-mentioned air gap 391 and the configuration groove 323, so as to realize the process of vacuum adsorbing the semiconductor element 400 to the pressure buffer portion 330.

[0120] More specifically, the semiconductor element 400 includes a substrate 410, a die unit 420, a plurality of solder balls 430 and a plurality of contacts 440. The substrate 410 includes a first surface 411 and a second surface 412 opposite to each other. These solder balls 430 are arranged at intervals along the horizontal direction (such as the Y axis) on the first surface 411 of the substrate 410. These contacts 440 are arranged at intervals along the horizontal direction (such as the Y axis) on the second surface 412 of the substrate 410. The die unit 420 is located on the second surface 412 of the substrate 410 and is between these contacts 440 for flatly contacting the flat surface 342 of the elastic pad 340, and the area of the die unit 420 is not larger than the area of the flat surface 342 of the elastic pad 340.

[0121] Thus, when the pressure buffer portion 330 adsorbs the semiconductor element 400, the flat surface 342 of the elastic pad 340 is in flat contact with one side of the die unit 420 relative to the substrate 410, and the die unit 420 is sucked by the vacuum suction V through the through-hole 350 on this side relative to the substrate 410. In addition, when the pressure buffer portion 330 presses the semiconductor element 400 into the test area 211, the semiconductor element 400 is pressed between the elastic pad 340 and these terminals 230, so that these contact points 440 of the semiconductor element 400 respectively contact these probe portions 380 of the pick-up module 300, and these solder balls 430 of the semiconductor element 400 respectively contact these terminals 230 of the test stage 200. It should be understood that since the pressures applied by the pressure buffer portion 330 and these terminals 230 to the two opposite surfaces of the semiconductor element 400 are substantially the same, the semiconductor element 400 will not be oppressed and damaged to generate cracks. Thus, when the pressures applied above and below the semiconductor element 400 are approximately equivalent and uniform, the warping generated by the substrate 410 of the semiconductor element 400 can be reduced. Therefore, the substrate 410 of the semiconductor element 400 is not easily cracked.

[0122] Figure 3 is Figure 1 the front view of the elastic pad 340 of Figure 4 is Figure 3 the partial cross-sectional view of the through-hole 350 of Figure 1 along the line AA. As Figure 3 shown, in this embodiment, the flat surface 342 of the elastic pad 340 has a geometric figure. The geometric figure is, for example, a rectangle. These through-holes 350 are symmetrically arranged on the flat surface 342 and are offset from the centroid 351 of the geometric figure. In other words, any of these through-holes 350 is not arranged on the centroid 351 of the geometric figure, so that the vacuum suction V ( Figure 2 ) of the through-hole 350 of the elastic pad 340 can be evenly distributed on the elastic pad 340, rather than concentrated at the center (such as the centroid 351) of the flat surface 342 of the elastic pad 340, thereby balancing the pressures applied by the pressure buffer portion 330 and these terminals 230 to the semiconductor element 400 ( Figure 2 ).

[0123] Furthermore, more specifically, as Figure 2 and Figure 3As shown, the flat surface 342 is, for example, rectangular, and the rectangle has a plurality of corner portions 352. These through-holes 350 are respectively disposed at these corner portions 352 of the rectangle, and further balance the pressure applied to the semiconductor element 400 by the pressure buffer portion 330 and these terminals 230. Each through-hole 350 is a round hole 354, and the number of round holes 354 is the same as the number of these sub-pipes 322. Each round hole 354 has a straight inner wall 355. The straight inner wall 355 completely surrounds this round hole 354.

[0124] Figure 5 is a front view of the elastic pad 340A according to an embodiment of the present invention. As Figure 5 shown, the elastic pad 340A of this embodiment is substantially the same as Figure 3 the elastic pad 340, and the difference is that the number of through-holes 350 of the elastic pad 340A of this embodiment is two, and each through-hole 350 is a long and narrow groove 356, rather than a round hole. Each long and narrow groove 356 communicates with one or more sub-pipes 322, and the number of each long and narrow groove 356 is not greater than the number of these sub-pipes 322.

[0125] Figure 6 is a longitudinal sectional view of the through-hole 350 of the elastic pad 340B of the picking module 300 according to an embodiment of the present invention. As Figure 6 shown, the elastic pad 340B of this embodiment is substantially the same as Figure 3 the elastic pad 340, and the difference is that each through-hole 350 includes a spiral inner wall 357, rather than a straight inner wall. The spiral inner wall 357 surrounds the axis 353 of the through-hole 350 in a spiral manner. However, the present invention is not limited to the inner wall type of the through-hole 350. Thus, since each through-hole 350 has a spiral inner wall 357, when the elastic pad 340B is compressed, the through-hole 350 can be more unobstructed and will not be blocked.

[0126] Figure 7 is a schematic diagram of a test system 1 according to an embodiment of the present invention. Figure 8 is Figure 7 the operation diagram of the test system 1. As Figure 7 and Figure 8As shown, the test system 1 includes a crack sound monitoring device 50. The crack sound monitoring device 50 includes a database unit 500, a voiceprint generation unit 600, a sound conduction group 700, and a processing unit 900. The database unit 500 contains at least one first voiceprint pattern. The database unit 500 is, for example, a hard disk, a memory, or a cloud device. However, the present invention is not limited thereto. The first voiceprint pattern is the sound generated by the semiconductor element 400 due to chipping, and the first voiceprint pattern is pre-collected data. If there are multiple first voiceprint patterns, the first voiceprint patterns are different from each other, and the first voiceprint patterns are different crack sounds generated by chipping corresponding to different local positions of a semiconductor element 400 respectively. The sound conduction group 700 is connected to the voiceprint generation unit 600 and the test device 10, and is used to transmit the sound wave transmitted from the semiconductor element 400 via the test device 10 to the voiceprint generation unit 600. The voiceprint generation unit 600 is used to receive and convert this sound wave into a second voiceprint pattern. The processing unit 900 is electrically connected to the voiceprint generation unit 600 and the database unit 500. The processing unit 900 is used to compare and determine whether the first voiceprint pattern and the second voiceprint pattern are consistent. If it is determined that the first voiceprint pattern and the second voiceprint pattern are exactly the same, it means that the semiconductor element 400 may generate chips; otherwise, it means that the semiconductor element 400 may not have generated chips yet. The processing unit 900 is, for example, a central processing unit (CPU) or a single-chip device with a program. However, the present invention is not limited thereto. In this way, the damage or crack generated by the semiconductor element 400 can be detected immediately, effectively avoiding the subsequent increase in the defective rate and reducing the subsequent quality control cost and maintenance cost.

[0127] More specifically, as Figure 7 shown, in this embodiment, the sound conduction group 700 is directly connected to the outer wall 313 of the moving arm 310. In this way, if the semiconductor element 400 generates chips, the sound wave of the chips can be transmitted to the sound conduction group 700 through the solid conduction of the moving arm 310, and then transmitted to the voiceprint generation unit 600. However, the present invention is not limited thereto. In other embodiments, in order to be closer to the semiconductor element 400, the sound conduction group 700 may also be configured to be directly connected to the bottom 312 of the moving arm 310, the outer wall 212 of the seat body 210 of the test stage 200, or the side facing the moving arm 310.

[0128] In this embodiment, the crackling sound monitoring device 50 further includes a detector 810 and an enabling switch 820. The detector 810 is electrically connected to the processing unit 900 for detecting whether the semiconductor element 400 is being pressed onto the test stage 200. The enabling switch 820 is electrically connected to the processing unit 900 and the voiceprint generating unit 600. Thus, when it is detected that the semiconductor element 400 is being pressed onto the test stage 200 instantaneously, the processing unit 900 controls the enabling switch 820 to activate the voiceprint generating unit 600. Therefore, within a preset interval, the voiceprint generating unit 600 starts to receive the sound waves transmitted from the semiconductor element 400 via the test device 10 and converts them into a second voiceprint pattern for subsequent comparison and judgment by the processing unit 900.

[0129] For example, the preset interval is set to the period from when the semiconductor element 400 starts to be pressed down until the pressing is completed. The monitoring starting point for the crackling of the semiconductor element 400 is 200 milliseconds (ms) before the semiconductor element 400 reaches the test area 211, and the monitoring ending point is 300 milliseconds (ms) after the semiconductor element 400 arrives at the test area 211. Therefore, the preset interval is approximately 500 milliseconds (ms) in total. In this embodiment, the detector 810 is, for example, a known means such as pressure sensing detection, light detection, or image detection. However, the present invention is not limited thereto.

[0130] In this embodiment, for example, the crackling sound monitoring device 50 further includes an alarm unit 830. The alarm unit 830 is electrically connected to the processing unit 900. The alarm unit 830 is, for example, a device that uses methods such as images, sounds, light emission, or driving other machines. However, the present invention is not limited thereto. Therefore, when it is determined that the first voiceprint pattern is consistent with the second voiceprint pattern, the processing unit 900 controls the alarm unit 830 to issue an alarm externally. When it is determined that the first voiceprint pattern is inconsistent with the second voiceprint pattern, the processing unit 900 controls the alarm unit 830 not to operate, or to issue another kind of alarm externally. However, the present invention is not limited thereto. In other embodiments, the present invention may omit the existence of the alarm unit, or use other similar means that can inform about the crackling.

[0131] Figure 9 It is a schematic diagram of the voiceprint generating unit 600 and the sound conduction group 700 of a crackling sound monitoring device 50 according to an embodiment of the present invention. More specifically, as Figure 7 shown in Figure 9 and shown, the sound conduction group 700 includes a solid-state conduction oscillator 710, a sound guide tube 720, and a diaphragm 780. The solid-state conduction oscillator 710 is directly connected to the moving arm 310 for receiving the vibrations transmitted from the semiconductor element 400 via the test device 10. For example, the solid-state conduction oscillator 710 is a solid metal block, adhered to the outer wall of the moving arm 310 through a fixing adhesive, or integrally formed with the moving arm 310.

[0132] The sound guiding tube 720 is fixedly connected to the voiceprint generating unit 600 and the solid-state conduction oscillator 710 respectively. Further, one end of the sound guiding tube 720 is fixed to the solid-state conduction oscillator 710 through a first fixing ring 760, and the other end of the sound guiding tube 720 is fixed to the voiceprint generating unit 600 through a second fixing ring 770. The duct of the sound guiding tube 720 connects the solid-state conduction oscillator 710 and the voiceprint generating unit 600. In addition, the sound guiding tube 720 is not limited to being rigid or flexible. The first fixing ring 760 has an opening 761, and the opening 761 connects the sound transmission channel 732 of the sound guiding tube 720. The diaphragm 780 is located inside the sound guiding tube 720. For example, the diaphragm 780 is tightly located inside the opening 761 of the first fixing ring 760, so as to push the air in the sound transmission channel 732 of the sound guiding tube 720 according to the vibration transmitted from the semiconductor element via the test device 10, so as to generate corresponding sound waves and transmit them to the voiceprint generating unit 600.

[0133] Furthermore, the sound guiding tube 720 includes a sound insulation inner tube 730, a sound insulation outer tube 740 and a porous sound absorbing material 750. The sound insulation inner tube 730 includes the above-mentioned sound transmission channel 732. The sound transmission channel 732 penetrates through two opposite ends of the sound insulation inner tube 730. The sound insulation outer tube 740 surrounds the sound insulation inner tube 730, and a sealed space 731 is defined between the sound insulation outer tube 740 and the sound insulation inner tube 730. The sealed space 731 surrounds the sound transmission channel 732. The porous sound absorbing material 750 fills the sealed space 731 and surrounds the sound insulation inner tube 730 and the sound transmission channel 732. In other words, the sound guiding tube 720 has a three-layer coating design, which is the sound insulation inner tube 730, the porous sound absorbing material 750 and the sound insulation outer tube 740 from the inside to the outside, so that the noise factors of the sound waves are optimally suppressed.

[0134] For example, the voiceprint generating unit 600 includes a microelectromechanical (MEMS) microphone unit, which has a sound chamber 610, two MEMS wafers 620, a fixed electrode plate 630 and a vibrating electrode diaphragm 640. The MEMS wafers 620 are located inside the sound chamber 610, the fixed electrode plate 630 is connected to the two MEMS wafers 620, the vibrating electrode diaphragm 640 is connected to the two MEMS wafers 620, and is attached to one side of the fixed electrode plate 630 and faces the sound conduction group 700. Therefore, when the sound wave reaches the vibrating electrode diaphragm 640 inside the sound chamber 610 through the sound conduction group 700, the vibrating electrode diaphragm 640 vibrates due to the sound pressure, and thus a second voiceprint pattern is generated through an electrical signal. Since the microelectromechanical (MEMS) microphone unit is already a known technique, it will not be described in detail here. However, in other embodiments, the voiceprint generating unit can also be other machines that can convert sound into a voiceprint pattern (voiceprint analysis).

[0135] Figure 10 It is a flowchart of a crack sound monitoring method according to an embodiment of the present invention. AsFigure 10 As shown, the crack sound monitoring method of the present invention is suitable for detecting whether a semiconductor element 400 being tested on the above-mentioned test device 10 generates cracks, and the crack sound monitoring method includes steps 901 to 905 as follows. In step 901, a plurality of first sound pattern patterns different from each other are provided. In step 902, sound waves transmitted from the semiconductor element 400 via the test device 10 are received. In step 903, the sound waves are converted into a second sound pattern pattern. In step 904, it is compared and determined whether the first sound pattern pattern and the second sound pattern pattern are consistent. If so, step 905 is performed; otherwise, step 906 is performed. In step 905, when it is determined that the second sound pattern pattern is consistent with one of the first sound pattern patterns, it means that the semiconductor element 400 may generate cracks, and an alarm is issued externally. In step 906, it means that the semiconductor element 400 may not have generated cracks yet.

[0136] Furthermore, before step 902 of this embodiment, the crack sound monitoring method further includes two steps as follows. Detect whether the semiconductor element 400 is pressed onto the test stage 200 of the test device 10. When it is detected that the semiconductor element 400 is pressed onto the test stage 200 instantaneously, only then start to receive the sound waves transmitted from the semiconductor element 400 via the test device 10; otherwise, do not receive any sound waves.

[0137] Finally, in the above-disclosed embodiments, they are not intended to limit the present invention. Any person skilled in this art, without departing from the spirit and scope of the present invention, can make various changes and modifications, and all can be protected by the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the appended claims.

Claims

1. A testing device, characterized in that, include: - vacuum pump equipment; A test platform comprising a test area and a plurality of terminals, wherein the plurality of terminals are arranged in the test area; as well as A pickup module, comprising: A movable arm for moving toward the test area; an airway assembly located in the movable arm and connected to the vacuum pump device and the bottom of the movable arm respectively; and A pressure buffer portion includes an elastic pad and a plurality of through-holes. The elastic pad is located at the bottom of the movable arm. The elastic pad has a flat surface for contacting a semiconductor element. The plurality of through-holes are distributed on the flat surface and connected to the airway assembly so that the vacuum pump device can vacuum adsorb the semiconductor element onto the flat surface. Each of the plurality of through-holes includes a spiral inner wall that spirally surrounds the axis of the through-hole. When the pressure buffer portion presses the semiconductor element down onto the multiple terminals in the test area, the semiconductor element is electrically connected to the multiple terminals.

2. The test device according to claim 1, characterized in that, The flat surface of the elastic pad has a geometric shape, and the plurality of through openings are symmetrically arranged and staggered with a centroid of the geometric shape.

3. The testing device according to claim 1, characterized in that, The flat surface of the elastic pad is in the shape of a rectangle, and the plurality of through openings are respectively arranged at a plurality of corner portions of the rectangle.

4. The testing device according to claim 1, wherein: The elastic pad includes a rubber pad, a silicone pad or an indium sheet.

5. The testing device according to claim 1, characterized in that, Each of the through openings includes one of a circular hole and a narrow and long groove.

6. The testing device according to claim 1, characterized in that When the pressure buffer portion presses the semiconductor element down onto the plurality of terminals in the test area, the pressure applied by the pressure buffer portion and the plurality of terminals to two opposite surfaces of the semiconductor element are the same.

7. The test device according to claim 1, wherein, The pickup module also includes: a distribution board; A plurality of probe parts are distributed on the movable arm and are respectively welded to one side of the wiring board to respectively abut against one side of the semiconductor element; and A memory unit is soldered to the other side of the wiring board and electrically connected to the plurality of probes for testing the semiconductor device. The pressure buffer portion presses the semiconductor element down into the test area, so that the semiconductor element is electrically connected to the plurality of terminals and the plurality of probe portions.

8. The test device according to claim 7, characterized in that, The semiconductor device comprises: a substrate; a plurality of solder balls, located on one side of the substrate, for contacting the plurality of terminals; a plurality of contacts, located on the other side of the substrate, for contacting the plurality of probe portions; as well as A bare die unit is located on the other side of the substrate, between the plurality of contacts, and is used to contact the flat surface of the elastic pad. The area of the bare die unit is not larger than the area of the flat surface of the elastic pad.

9. The test device according to claim 1, characterized in that The airway assembly includes a main pipeline and a plurality of sub-pipelines. The plurality of sub-pipelines are connected to the main pipeline and are directly connected to the plurality of through-ports.

10. A pick-up module, characterized in that, include:

1. Move your arm; an airway assembly located in the movable arm and connected to a bottom portion of the movable arm for connecting to a vacuum pump device; as well as A pressure buffer part, comprising an elastic pad body and a plurality of through holes. The elastic pad body is located at the bottom of the moving arm. The elastic pad body has a flat surface for contacting a semiconductor element. The plurality of through holes are distributed on the flat surface and connected to the air duct group for the vacuum pump device to vacuum-adsorb the semiconductor element on the flat surface. Each of the plurality of through holes includes a spiral inner wall that surrounds the axis of the through hole in a spiral manner.

11. The pick-up module according to claim 10, characterized in that, The flat surface of the elastic pad body has a geometric shape. The plurality of through holes are symmetrically arranged and are offset from the centroid of the geometric shape.

12. The pick-up module according to claim 10, characterized in that, The flat surface of the elastic pad body is a rectangle, and the plurality of through holes are respectively arranged at a plurality of corner parts of the rectangle.

13. The pick-up module according to claim 10, wherein The elastic pad body includes a rubber pad, a silica gel pad or an indium sheet.

14. The pick-up module according to claim 10, characterized in that, Each of the through holes includes one of a round hole and a long and narrow groove.

15. The pick-up module according to claim 10, wherein It further includes: A wiring board; A plurality of probe parts, distributed on the moving arm, respectively welded to one side of the wiring board for respectively abutting against one side of the semiconductor element; and A memory unit, welded to the other side of the wiring board and electrically connected to the plurality of probe parts for testing the semiconductor element.

16. The pickup module according to claim 10, characterized in that: The air duct group includes a main duct and a plurality of sub ducts. The plurality of sub ducts are jointly connected to the main duct and are respectively directly docked with the plurality of through holes.

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