Method and apparatus for carbon compound film deposition

Abstract

A method and apparatus for depositing a carbon compound on a substrate includes: using an inductively coupled plasma (ICP) chamber having a chamber body, a lid, an internal space, a pump device and a gas delivery system, and a susceptor for supporting a substrate disposed in the internal space of the ICP chamber, the susceptor having an upper portion having an upper surface formed from aluminum nitride and a lower portion having a tubular structure formed from aluminum nitride, the upper portion being configured to support the substrate and heat the substrate with an embedded heating element, the lower portion being configured to support the upper portion and load an electrode for supplying power to the embedded heating element of the upper portion, and the susceptor being configured to heat the substrate during deposition of a carbon compound film.

Description

Technical Field

[0001] Embodiments of the present principles generally relate to inductively coupled plasma reactor chambers for semiconductor processing. Background Art

[0002] The large-scale growth of carbon-based films such as diamond and graphene has attracted widespread attention due to the excellent mechanical and electronic properties of these films. Diamond films have been used in the field of optical coatings for many years due to their outstanding properties, such as extremely high hardness, high thermal conductivity, good optical transparency, and high resistivity. Diamond films are also used as hardmask materials in the semiconductor industry due to their superior etch selectivity compared to other amorphous carbon films deposited by conventional plasma enhanced chemical vapor deposition (PECVD). Due to the very high sp 3 Carbon percentage, diamond film etching selectivity can be two or three times that of other amorphous carbon films. Graphene, due to its thin thickness and high electron mobility, can be used to replace traditional metal barrier layers for next-generation semiconductor devices, because the resistance of metal lines is becoming increasingly higher as the thickness and size of metal lines continue to shrink. Graphene also has high optical transparency and can be used in flexible electronics applications, such as smart watch applications. However, the inventors have found that producing uniform carbon compound films is extremely difficult and time-consuming, which has greatly reduced the widespread use of such films.

[0003] Accordingly, the inventors provide improved methods and apparatus for depositing carbon compound films on substrates. Summary of the invention

[0004] Methods and apparatus are provided herein for enhanced deposition of carbon compound films using an inductively coupled plasma reactor.

[0005] In some embodiments, an apparatus for carbon compound deposition in semiconductor processing may include: an inductively coupled plasma (ICP) chamber having a chamber body, a lid, an interior space, a pump device, and a gas delivery system; and a susceptor for supporting a substrate disposed within the interior space of the ICP chamber, wherein the susceptor has a lower portion and an upper portion having an upper surface formed from aluminum nitride, the upper portion being configured to support the substrate and heat the substrate with an embedded heating element, the lower portion having a tubular structure formed from aluminum nitride, the lower portion being configured to support the upper portion and load an electrode for supplying power to the embedded heating element of the upper portion, and wherein the susceptor is configured to heat the substrate during deposition of a carbon compound film.

[0006] In some embodiments, the pedestal is configured to heat a substrate from about 400 degrees Celsius to about 800 degrees Celsius; wherein the lid of the chamber body is flat and the ICP chamber has a coaxial top coil above the lid; wherein the lid of the chamber body is domed and the ICP chamber has a top coil and a side coil; wherein the pump device is configured to maintain a pressure of about 2 mTorr to about 2 Torr; wherein the embedded heating element is configured to operate at about 2 kW to about 4 kW; wherein the embedded heating element has an inner heating zone and an outer heating zone and is configured to provide uniform deposition of the carbon compound film, and wherein a first power supplied to the inner heating zone is less than a second power supplied to the outer heating zone; wherein the gas delivery system is configured to have top and side nozzle gas injectors; wherein the pedestal is configured to rotate or move vertically; and / or wherein the lower portion has a wall thickness of about 0.05 inches to about 0.10 inches, thereby reducing heat loss.

[0007] In some embodiments, an apparatus for heating a substrate in an inductively coupled plasma (ICP) chamber may include: a susceptor configured to be disposed within an interior space of the ICP chamber and configured to heat the substrate during deposition of a carbon compound film, the susceptor configured to have a lower portion and an upper portion having an upper surface formed from aluminum nitride, the upper portion configured to support the substrate, wherein the upper portion has embedded heating elements to heat the substrate, the lower portion having a tubular structure formed from aluminum nitride, and the lower portion configured to support the upper portion and carry electrodes for supplying power to the embedded heating elements.

[0008] In some embodiments, the embedded heating element is configured to heat the substrate from about 400 degrees Celsius to about 800 degrees Celsius; wherein the embedded heating element is configured to operate at about 2 kW to about 4 kW; wherein the embedded heating element has an inner heating zone and an outer heating zone, and is configured to provide uniform deposition of the carbon compound film; wherein a first power supplied to the inner heating zone is less than a second power supplied to the outer heating zone; wherein the susceptor is configured to rotate during deposition of the carbon compound film when positioned in an ICP chamber; wherein the susceptor is configured to move vertically when positioned in the ICP chamber; and / or wherein the lower portion has a wall thickness of about 0.05 inches to about 0.10 inches, thereby reducing heat loss.

[0009] In some embodiments, a method for depositing a carbon compound film may include the following steps: placing a substrate in an inductively coupled plasma (ICP) chamber on a susceptor formed from aluminum nitride having an embedded heating element; heating the substrate to about 400 degrees Celsius to about 800 degrees Celsius by supplying the embedded heating element with a power of about 2 kW to about 4 kW; and forming a plasma in the ICP chamber while injecting one or more gases into an internal processing space of the ICP chamber to deposit a carbon compound film on the substrate.

[0010] In some embodiments, the method may further include: rotating the susceptor during deposition of the carbon compound film to increase film uniformity; and / or heating the substrate using an embedded heating element having an inner heating zone and an outer heating zone, wherein the temperature of the inner heating zone is less than the temperature of the outer heating zone to increase the uniformity of film growth.

[0011] Other and further embodiments are disclosed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The embodiments of the present principles briefly summarized above and discussed in more detail below can be understood by reference to the illustrated embodiments of the present principles depicted in the accompanying drawings. However, the drawings illustrate only typical embodiments of the present principles and are therefore not to be considered limiting of scope, as the present principles recognize other equally effective embodiments.

[0013] Figure 1 Depicted is a schematic side view of an inductively coupled plasma chamber with a flat lid for depositing carbon compound films, according to some embodiments of the present principles.

[0014] Figure 2 Depicted is a schematic side view of an inductively coupled plasma chamber with a domed lid for depositing carbon compound films, according to some embodiments of the present principles.

[0015] Figure 3An isometric view depicting a susceptor with dual zone heating for an inductively coupled plasma chamber, according to some embodiments of the present principles.

[0016] Figure 4 According to some embodiments of the present principles, a method for depositing a carbon compound film using an inductively coupled plasma chamber is provided.

[0017] To facilitate understanding, the same reference numerals have been used as much as possible to represent the same elements common to the various figures. The accompanying drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further explanation. DETAILED DESCRIPTION

[0018] Methods and apparatus for depositing carbon compound films utilize substrate heaters in the form of pedestals to promote film growth in inductively coupled plasma (ICP) chambers. The substrate heater may also rotate during deposition to increase the uniformity of the deposited film. ICP chamber deposition processing according to the present principles is suitable for low-temperature deposition of carbon compounds because ICP has a high radical density and is capable of depositing carbon compound films on wafers at lower temperatures. High radical density is conducive to high chemical reactivity, and low temperature can minimize device damage in the wafer. ICP with chemicals such as, but not limited to, carbon hydrogen and hydrogen is used to grow both diamond and graphene layers. ICP not only provides high-density carbon hydrogen species for rapid deposition, but also provides high-density hydrogen radicals, which can etch away amorphous carbon phases at lower processing temperatures, resulting in rapid deposition of high-quality films at significantly reduced processing temperatures. The method and apparatus of the present principles combine ICP chemical vapor deposition (CVD) with innovative in-situ seeding and interface control, and generate high-quality diamond and graphene films on both dielectric and metal substrates suitable for mass production.

[0019] Currently, high-quality diamond and graphene films must be deposited by CVD growth using high growth temperatures (typically 800 degrees Celsius to 1000 degrees Celsius). However, high temperatures are incompatible with current integration process flows used in the semiconductor industry because metal lines and low-k films on device wafers cannot withstand such high temperatures. In addition, graphene deposited by high-temperature CVD also needs to be transferred from thick metal foils, which is inconvenient and impractical for industrial applications. The method and apparatus of the present principles provide low-temperature growth from about 400 degrees Celsius to about 800 degrees Celsius, eliminating the negative effects caused by high-temperature deposition while maintaining high-quality and uniform carbon compound films.

[0020] Another advantage of the method and apparatus of the present principles is that both flat lid type ICP chambers and dome lid type ICP chambers are compatible with carbon compound film deposition processes.The method and apparatus of the present principles also work with single wafer reactors and dual wafer reactors. Figure 1 A schematic side view of an ICP chamber 100 with a flat lid 112 for depositing a carbon compound film is depicted in accordance with some embodiments. The flat lid 112 may be formed from aluminum nitride or an aluminum oxide-based material. The ICP chamber 100 includes a chamber wall 102 that encloses an internal processing space 104 in which deposition occurs. The ICP chamber 100 also includes a pump system 106 to control the pressure in the ICP chamber 100 and to remove unwanted gases before, during, or after processing a substrate. In some embodiments, the pressure in the internal processing space 104 of the ICP chamber 100 may be maintained at about 2 mTorr to about 500 mTorr. In some embodiments, the pressure in the internal processing space 104 of the ICP chamber 100 may be maintained at about 2 mTorr to about 2000 mTorr. In some embodiments, the pump system 106 may also include a throttling gate valve to help maintain the pressure in the ICP chamber 100. In some embodiments, the pump system 106 may also include a roughing pump for rapid pump down and a turbomolecular pump for higher vacuum pressures.

[0021] The gas delivery system 108 provides a process gas to the internal processing space 104 through a nozzle 110. In some embodiments, the gas delivery system 108 may include a showerhead, a gas ring and / or a nozzle and the like. In some embodiments, the process gas may include a gas based on methane, acetylene, hydrogen, oxygen, argon and / or helium and the like. A plasma is inductively coupled in the internal processing space 104 using a top coil having a double helical coil antenna including an inner coil 114 and an outer coil 116. The plasma coupling power is provided by a plasma coupling power supply 118, which may be a single unit or multiple units. The plasma coupling power supply 118 provides RF power with a frequency of about 2 MHz to about 60 MHz at a power of about 3 kW to about 5 kW. The supplied RF power may be continuous or pulsed. The plasma coupling power supply 118 may also include one or more RF matching networks located between the plasma coupling power supply 118 and the top coil for adjusting impedance.

[0022] The base 120 includes an upper portion 122 and a lower portion 124. The upper portion 122 includes one or more heated zones provided by, for example, a first embedded heater 136 and a second embedded heater 138. The one or more heated zones are connected to one or more power sources. Figure 1 In the example shown, the first embedded heater 136 is connected to a heater power supply 144 via a first electrode 140. The second embedded heater 138 is connected to the heater power supply 144 via a second electrode 142. In some embodiments, the heater power supply 144 can provide about 2 kW to about 4 kW to each of the first embedded heater 136 and the second embedded heater 138. In some embodiments, more than one heater power supply can be used. In some embodiments, the upper portion 122 can also allow lift pins 154 to pass through the upper portion to allow the substrate to be lifted onto and off the susceptor 120 (see, e.g., Figure 3 ). The susceptor 120 has vertical movement 126 provided by a lifting assembly 128. The bellows 130 allows the vertical movement 126 to occur without breaking the seal of the internal processing volume 104. In some embodiments, the susceptor 120 may also have an optional rotation assembly 134 that provides rotational movement 132 to the susceptor 120. The rotational movement 132 helps provide more uniform film deposition during processing of the substrate.

[0023] The ICP chamber 100 may also include a controller 146. The controller 146 controls the operation of the ICP chamber 100 using direct control or by controlling a computer (or controller) associated with the ICP chamber 100. In operation, the controller 146 enables the collection of data and feedback to optimize the performance of the ICP chamber 100. The controller 146 generally includes a central processing unit (CPU) 148, a memory 150, and support circuits 152. The CPU 148 can be any form of general-purpose computer processor that can be used in an industrial environment. The support circuits 152 are conventionally coupled to the CPU 148 and may include cache memory, clock circuits, input / output subsystems, power supplies, and the like. Software routines such as the methods described above may be stored in the memory 150, and when executed by the CPU 148, the CPU 148 is converted into a special-purpose computer (controller 146). These software routines may also be stored and / or executed by a second controller (not shown) located remotely from the ICP chamber 100.

[0024] The memory 150 is in the form of a computer-readable storage medium containing instructions that, when executed by the CPU 148, facilitate the operation of the semiconductor process and equipment. The instructions in the memory 150 are in the form of a program product, such as a program implementing the apparatus of the present principles. The program code may conform to any of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program(s) of the program product define the functions of various aspects. The illustrated computer-readable storage medium includes, but is not limited to: a non-writable storage medium (e.g., a read-only memory device in a computer, such as a CD-ROM disk readable by a CD-ROM drive, a flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory), on which information is permanently stored; and a writable storage medium (e.g., a floppy disk in a floppy disk drive or hard drive, or any type of solid-state random access semiconductor memory), on which variable information is accessed. Such a computer-readable storage medium, when carrying computer-readable instructions directed to the functions of the substrate heating system described herein, is a plurality of aspects of the present principles.

[0025] Figure 2 According to some embodiments, a schematic side view of an ICP chamber 200 having a dome cover 212 for depositing a carbon compound film is depicted. The dome cover 212 can be formed from aluminum nitride or an aluminum oxide-based material. The ICP chamber 200 includes a chamber wall 202 that surrounds an internal processing space 204 where deposition occurs. The ICP chamber 200 also includes a pump system 206 to control the pressure within the ICP chamber 200 and to remove unwanted gases before, during, or after processing a substrate. In some embodiments, the pressure in the internal processing space 204 of the ICP chamber 200 can be maintained from about 2mTorr to about 500mTorr. In some embodiments, the pressure in the internal processing space 204 of the ICP chamber 200 can be maintained from about 2mTorr to about 2000mTorr. In some embodiments, the pump system 206 may also include a throttling gate valve to help maintain the pressure within the ICP chamber 200. In some embodiments, the pump system 206 may also include a roughing pump for fast pumpdown and a turbomolecular pump for higher vacuum pressures.

[0026] The gas delivery system 208 provides processing gas to the internal processing space 204 through the top nozzle 210 and the side nozzle 256. The top nozzle 210 and the side nozzle 256 can be adjusted to facilitate providing uniform deposition on the substrate. The nozzle can be formed from aluminum, aluminum oxide or aluminum nitride materials. In some embodiments, the gas delivery system 208 may include a showerhead, a gas ring and / or a nozzle and the like. In some embodiments, the processing gas may include a gas based on methane, acetylene, hydrogen, oxygen, argon and / or helium and the like. The top coil 214 and the side coil 216 are used to inductively couple the plasma. In some embodiments, the plasma coupling power can be provided by the top coil plasma coupling power supply 218 and the side coil plasma coupling power supply 258. In some embodiments, the top coil 214 and the side coil 216 can be supplied with power by a common plasma coupling power supply (not shown). The top coil plasma coupling power supply 218 and the side coil plasma coupling power supply 258 provide RF power with a frequency of about 2 MHz to about 60 MHz at a power of about 3 kW to about 20 kW. The supplied RF power may be continuous or pulsed. The top coil plasma coupling power supply 218 and the side coil plasma coupling power supply 258 may also include RF matching networks between the power supply and the coils, respectively, for adjusting impedance.

[0027] The base 220 includes an upper portion 222 and a lower portion 224. The upper portion 222 includes one or more heated zones provided by, for example, a first embedded heater 236 and a second embedded heater 238. The one or more heated zones are connected to one or more power sources. Figure 2 In the example shown, the first embedded heater 236 is connected to a heater power source 244 via a first electrode 240. The second embedded heater 238 is connected to the heater power source 244 via a second electrode 242. In some embodiments, the heater power source 244 can provide about 2 kW to about 4 kW to each of the first embedded heater 236 and the second embedded heater 238. In some embodiments, the upper portion 222 can also allow lift pins 254 to pass through the upper portion to allow the substrate to be lifted onto and off the susceptor 220 (see, e.g., Figure 3 ). The pedestal 220 has vertical movement 226 provided by a lifting assembly 228. The bellows 230 allows the vertical movement 226 to occur without breaking the seal of the internal processing volume 204. In some embodiments, the pedestal 220 may also have an optional rotation assembly 234 to provide rotational movement 232 to the pedestal 220. The rotational movement 232 helps provide more uniform film deposition during processing of the substrate.

[0028] The ICP chamber 200 may also include a controller 246. The controller 246 controls the operation of the ICP chamber 200 using direct control or by controlling a computer (or controller) associated with the ICP chamber 200. In operation, the controller 246 enables the collection of data and feedback to optimize the performance of the ICP chamber 200. The controller 246 generally includes a central processing unit (CPU) 248, a memory 250, and support circuits 252. The CPU 248 can be any form of general-purpose computer processor that can be used in an industrial environment. The support circuits 252 are conventionally coupled to the CPU 248 and may include cache memory, clock circuits, input / output subsystems, power supplies, and the like. Software routines such as the methods described above may be stored in the memory 250, and when executed by the CPU 248, these software routines convert the CPU 248 into a special-purpose computer (controller 246). These software routines may also be stored and / or executed by a second controller (not shown) located remotely from the ICP chamber 200.

[0029] The memory 250 is in the form of a computer-readable storage medium containing instructions that, when executed by the CPU 248, facilitate the operation of semiconductor processing and equipment. The instructions in the memory 250 are in the form of a program product, such as a program implementing the apparatus of the present principles. The program code may conform to any of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program(s) of the program product define the functions of various aspects. The illustrated computer-readable storage medium includes, but is not limited to: a non-writable storage medium (e.g., a read-only memory device within a computer, such as a CD-ROM disk readable by a CD-ROM drive, a flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory), on which information is permanently stored; and a writable storage medium (e.g., a floppy disk within a floppy disk drive or hard drive, or any type of solid-state random access semiconductor memory), on which variable information is accessed. Such a computer-readable storage medium, when carrying computer-readable instructions directed to the functions of the substrate heating system described herein, is a plurality of aspects of the present principles.

[0030] Figure 3 An isometric view of a pedestal 300 with dual zone heating for an inductively coupled plasma chamber is depicted in accordance with some embodiments. The pedestal 300 includes an upper portion 302 configured to support and heat a substrate. In some embodiments, the upper portion 302 includes one or more channels 308 to allow lift pins (not shown, see Figure 1 and Figure 2) through the upper portion 302 so as to lift the substrate from the upper portion 302 as the susceptor 300 moves vertically downward. In some embodiments, the upper portion 302 includes one or more heating zones. Figure 3 In the example of FIG. 1 , the first heating zone is defined by a first set of embedded heating elements 310 centrally located in the upper portion 302. The first set of embedded heating elements 310 is configured to be connected to a heating power source (not shown, see FIG. 1 ). Figure 1 and Figure 2 ) is in electrical contact with a first electrode 318. The second heating zone is defined by a second set of embedded heating elements 312 positioned about the periphery of the upper portion 302. The second set of embedded heating elements 312 is connected to a heating power source (not shown, see Figure 1 and Figure 2 ) is in electrical contact with a second electrode 320. In some embodiments, during film deposition, the second heating zone can have an applied power from about 75% to about 125% higher than the first heating zone to compensate for edge cooling of the substrate that occurs in the ICP chamber. In some embodiments, the second heating zone has a higher temperature than the first heating zone.

[0031] The upper portion 302 is formed from an aluminum nitride material, and in some embodiments, the upper portion 302 has a thickness 306 of about 0.500 inches to about 0.750 inches. The aluminum nitride material has a high thermal conductivity and, when used with the dual heating zones, allows the upper portion 302 to heat the substrate to a uniform temperature, allowing for increased and more uniform growth of films on the substrate surface. The aluminum nitride material is also resistant to chemicals used during the deposition process. The susceptor 300 has a lower portion 304 having a tubular structure formed from aluminum nitride. The lower portion 304 has a wall 314 having a thickness 316 of about 0.05 inches to about 0.10 inches. The inventors have discovered that if the thickness 316 of the wall 314 is kept to a minimum, heat loss from the susceptor 300 through the lower portion 304 will be significantly reduced. The tubular structure of the lower portion 304 allows the first electrode and the second electrode to pass through the lower portion 304 to the upper portion 302 to connect with the first set of embedded heating elements 310 and the second set of embedded heating elements 312, respectively.

[0032] Figure 4The present invention is a method 400 for depositing a carbon compound film in an ICP chamber according to some embodiments. In block 402, a substrate is placed in an ICP chamber on a susceptor formed from aluminum nitride having embedded heating elements. In some embodiments, the embedded heating elements may form one or more heating zones and may be configured to provide uniform heating of the substrate even in the presence of edge cooling effects caused by, for example, airflow in an internal processing space of the ICP chamber. The one or more heating zones may include an inner heating zone centrally located within an upper portion of the susceptor, and an outer heating zone located near the periphery of the upper portion of the susceptor. In some embodiments, the outer heating zone may be heated at a higher power than the inner heating zone due to the effect of the periphery of the substrate that may cool the interior of the ICP chamber. In block 404, the embedded heating elements are heated to a temperature of about 400 degrees Celsius to about 800 degrees Celsius by supplying the embedded heating elements with a power of about 2 kW to about 4 kW. The power supplied may vary based on the internal temperature of the different heating zones and / or the ICP chamber. In some embodiments, the substrate is heated by the embedded heating element to a temperature between about 400 degrees Celsius and about 750 degrees Celsius. In some embodiments, the substrate is heated by the embedded heating element to a temperature between about 400 degrees Celsius and about 700 degrees Celsius.

[0033] At block 406, a plasma is inductively coupled in an ICP chamber while one or more gases are injected into an internal processing volume of the ICP chamber to deposit a carbon compound film on a substrate. In some embodiments, the one or more gases may be based on methane, acetylene, hydrogen, oxygen, argon, and / or helium, and the like. In some embodiments, the plasma coupling power may be an RF continuous and / or pulsed power source operating from about 2 MHz to about 60 MHz at a power of about 3 kW to about 20 kW. In some embodiments using dual top coils, the plasma coupling power may be an RF source operating at about 13.56 MHz at a power of about 3 kW. In some embodiments using top and side coils, the top and side coils may be powered by one or more RF sources to provide about 10 kW of power to the top coil and to the side coils operating at about 2 MHz. In some embodiments, the ICP chamber may be operated at a pressure of about 2 mTorr to about 500 mTorr during carbon compound film deposition. In some embodiments, the ICP chamber may be operated at a pressure of about 2 mTorr to about 2000 mTorr during carbon compound film deposition. Such heating of the substrate promotes increased carbon compound film growth on the substrate. Such deposition process may occur for about 60 seconds to about 30 minutes. In some embodiments, the susceptor may be rotated during the carbon compound film deposition process so that a more uniform deposition occurs on the substrate.

[0034] Embodiments according to the present principles may be implemented in hardware, firmware, software, or any combination thereof. Embodiments may also be implemented as instructions stored using one or more computer-readable media, which may be read and executed by one or more processors. Computer-readable media may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing platform or a "virtual machine" running on one or more computing platforms). For example, a computer-readable medium may include any suitable form of volatile or non-volatile memory. In some embodiments, a computer-readable medium may include a non-transitory computer-readable medium.

[0035] Although the above is directed to embodiments of the present principles, other and further embodiments of the present principles may be derived without departing from the basic scope of the present principles.

Claims

1. An apparatus for depositing a graphene film or a diamond film in semiconductor processing, comprising: An inductively coupled plasma (ICP) chamber having a chamber body, a cover, an interior space, a pumping device, and a gas delivery system; a susceptor for supporting a substrate disposed in the interior space of the ICP chamber, wherein the susceptor has a lower portion and an upper portion formed from aluminum nitride having an upper surface, the upper portion being configured to support the substrate and heat the substrate with an embedded heating element, the lower portion having a tubular structure formed from aluminum nitride, the lower portion being configured to support the upper portion and carry an electrode for supplying power to the embedded heating element of the upper portion, wherein the embedded heating element has an inner heating zone and an outer heating zone, the inner heating zone and the outer heating zone being configured to provide uniform deposition of the film, a first power supplied to the inner heating zone being less than a second power supplied to the outer heating zone, and wherein the susceptor is configured to heat the substrate during deposition of the film; and A controller is configured to heat the susceptor to 400 degrees Celsius to 800 degrees Celsius, form plasma in the ICP chamber, and inject one or more gases into the inner space of the ICP chamber to deposit a graphene film or a diamond film.

2. The apparatus of claim 1, wherein the lid of the chamber body is flat and the ICP chamber has a coaxial top coil above the lid.

3. The apparatus of claim 1 wherein the lid of the chamber body is domed and the ICP chamber has a top coil and side coils.

4. The apparatus of claim 1, wherein the pump apparatus is configured to maintain a pressure of 2 mTorr to 2 Torr.

5. The apparatus of claim 1, wherein the embedded heating element is configured to operate at 2 kW to 4 kW.

6. The apparatus of claim 1, wherein the gas delivery system is configured with top and side nozzle gas injectors.

7. The apparatus of claim 1, wherein the base is configured to rotate or move vertically.

8. The apparatus of claim 1, wherein the lower portion has a wall thickness of 0.05 inches to 0.10 inches, thereby reducing heat losses.

9. An apparatus for forming a graphene film or a diamond film on a substrate, comprising: An inductively coupled plasma (ICP) chamber having a chamber body and an interior space within the chamber body; A base is disposed in the inner space of the chamber body, and the base includes: an upper portion formed from aluminum nitride having an upper surface, the upper portion being configured to support the substrate, wherein the upper portion has an embedded heating element to heat the substrate, wherein the embedded heating element has an inner heating zone and an outer heating zone, the inner heating zone and the outer heating zone being configured to provide uniform deposition of the film, a first power supplied to the inner heating zone being less than a second power supplied to the outer heating zone; and a lower portion having a tubular structure formed from aluminum nitride, the lower portion being configured to support the upper portion and to carry electrodes for supplying power to the embedded heating element; and A controller is in communication with at least the ICP chamber and the susceptor and is configured to heat the susceptor to 400 degrees Celsius to 800 degrees Celsius to deposit a graphene film or a diamond film.

10. The apparatus of claim 9, wherein the embedded heating element is configured to operate at 2 kW to 4 kW.

11. The apparatus of claim 9, wherein the susceptor is configured to rotate during deposition of the film when positioned in the ICP chamber.

12. The apparatus of claim 9, wherein the base is configured to move vertically when positioned in the ICP chamber.

13. The apparatus of claim 9, wherein the lower portion has a wall thickness of 0.05 inches to 0.10 inches, thereby reducing heat losses.

14. A method for depositing a graphene film or a diamond film, comprising the following steps: placing the substrate in an inductively coupled plasma (ICP) chamber on a susceptor formed from aluminum nitride having an embedded heating element, wherein the embedded heating element has an inner heating zone and an outer heating zone, the inner heating zone and the outer heating zone being configured to provide uniform deposition of the film, and wherein the temperature of the inner heating zone is less than the temperature of the outer heating zone to increase uniformity of film growth; heating the substrate to 400 degrees Celsius to 800 degrees Celsius by supplying the embedded heating element with a power of 2 kW to 4 kW; and Plasma is formed in the ICP chamber, and one or more gases are injected into an inner processing space of the ICP chamber to deposit a graphene film or a diamond film on the substrate.

15. The method of claim 14, further comprising the steps of: The susceptor is rotated during deposition of the film to increase film uniformity.

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