A process chamber

Abstract

The application discloses a process chamber and relates to the technical field of semiconductors, which comprises a chamber body, a liftable base, a plurality of lifting pins and a lifting pin bracket arranged in the chamber body; a plurality of lifting pin holes are formed in the base in the vertical direction and penetrate through the base; the plurality of lifting pins are arranged on the lifting pin bracket and correspondingly arranged in the plurality of lifting pin holes; the lower surface of the base is provided with a guide element extending in the vertical direction; the lifting pin bracket is in sliding connection with the guide element and abuts against the lower end of the guide element; and the lifting pin bracket is used for driving the plurality of lifting pins to lift when the base lifts. The application solves the problems that the area of the top end surface of the lifting pin is large, the process uniformity in the wafer projection area corresponding to the lifting pin is poor, and the lifting pin with the limiting structure in the shape of an inverted cone is easily stuck in the lifting pin hole of the base and is not easy to pull out.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and more specifically, relates to a process chamber. Background Technology

[0002] In semiconductor manufacturing equipment, Plasma Enhanced Chemical Vapor Deposition (PECVD) is used for dielectric thin film deposition processes to grow dielectric thin films with Si, O, and N as the main components on the wafer surface (it is also used for deposition processes of doped thin films containing B and P). Due to the special nature of the PECVD process, its rising needles are generally made of ceramic. Since the substrate, as an electrode in the PECVD process, needs to be radio frequency conductive, it is mainly made of conductive materials such as aluminum alloy (AlN is also used, but it also contains internal metal electrodes). Because the rising needle is located within the electrode and is made of ceramic insulation, its presence causes distortion of the electric field in the rising needle region during the process. According to the principle of capacitance, when the dielectric of a capacitor changes, the direction and intensity of the electric field lines will change accordingly, such as bending of the electric field lines and a decrease in electric field intensity.

[0003] In an existing process chamber, the fitting between the rising needle and the base is as follows: Figure 1 As shown, to ensure that the rising needle 2 can move together with the base 1 when the base 1 is raised, the top of the rising needle 2 is provided with an inverted conical limiting structure that forms a limiting fit with the inverted conical hole on the base 1. This results in a larger area of ​​the top end face of the rising needle 2, which leads to a decrease in the process uniformity within the wafer projection area corresponding to the rising needle 2, thereby affecting the overall process uniformity of the wafer. Furthermore, for example... Figure 1 In the prior art semiconductor process equipment shown, the engagement between the rising needle 2 and the base 1 is problematic. Due to the thermal expansion and contraction of the base 1, during maintenance, the base 1 is in a cold state, and the outer periphery of the limiting structure contacts the wall of the inverted conical hole on the base 1. As a result, the rising needle 2 with the inverted conical limiting structure is easily stuck in the rising needle hole on the base 1 and is not easy to pull out. Summary of the Invention

[0004] The purpose of this invention is to address the shortcomings of existing technologies by providing a process chamber that solves the problems of poor process uniformity in the wafer projection area corresponding to the riser due to the large area of ​​the top end face of the riser, and the problem that risers with inverted conical limiting structures are easily stuck in the riser holes on the base and are difficult to pull out.

[0005] To achieve the above objectives, the present invention provides a process chamber for use in semiconductor process equipment, comprising:

[0006] The chamber body contains a liftable base, multiple lifting needles, and lifting needle brackets.

[0007] The base has multiple vertically extending holes penetrating the base. Multiple rising pins are mounted on a rising pin bracket and correspondingly inserted into the multiple rising pin holes. A guide member extending vertically is provided on the lower surface of the base. The rising pin bracket is slidably connected to the guide member and abuts against the lower end of the guide member. The rising pin bracket is used to drive the multiple rising pins to rise and fall when the base is raised and lowered.

[0008] When the base is in the transfer position, the riser bracket contacts the bottom wall of the chamber body, and multiple risers extend from the upper surface of the base to support the wafer; when the base is in the process position, the riser bracket is limited to the lower end of the guide, and the top ends of the multiple risers are not higher than the upper surface of the base.

[0009] Optionally, the rising needle bracket includes a support plate and a support structure. The support plate is slidably connected to the guide member. A plurality of rising needles are disposed on the support plate. The support plate has a support structure on the side opposite to the base. When the base is located at the transmission position, the support structure is in contact with the bottom wall of the chamber body.

[0010] Optionally, the support structure includes a plurality of support columns, which are spaced apart circumferentially along the support plate. When the base is located at the transmission position, the plurality of support columns are in contact with the bottom wall of the chamber body.

[0011] Optionally, there are multiple guide members, which are spaced apart circumferentially along the base. The end of each guide member facing away from the base has an outwardly protruding limiting portion. When the base is located at the process position, the support plate abuts against the limiting portion.

[0012] Optionally, the lifting needle hole includes a mating hole and a guide hole arranged sequentially from top to bottom, the diameter of the mating hole being smaller than the diameter of the guide hole, and the lifting needle includes a mating part and a guide part arranged sequentially from top to bottom, the mating part being clearance-fitted with the mating hole, and the guide part being guide-fitted with the guide hole.

[0013] Optionally, the mating hole and the guide hole are connected by a first guide cone surface, and the mating part and the guide part are connected by a second guide cone surface, wherein the second guide cone surface and the first guide cone surface are guided and mated.

[0014] Optionally, the diameter of the mating part is no greater than 2 mm, and the diameter of the mating hole is no greater than 2.5 mm.

[0015] Optionally, each of the multiple support columns is provided with a height adjustment component at one end away from the support plate. The height adjustment component is used to adjust the height of the top ends of the multiple rising pins relative to the upper surface of the base when the base is located at the transmission position.

[0016] Optionally, the height adjustment assembly includes a sleeve screw and a locking nut. The lower end of the support column is threadedly connected to the sleeve screw, and the locking nut is threadedly connected to the support column. The locking nut is positioned above the sleeve screw and is used to lock the position of the sleeve screw.

[0017] Optionally, a base lifting mechanism is provided below the base, which is used to drive the base to move up and down between the transmission position and the process position. A spray plate is provided above the base, which is used to spray process gas.

[0018] This invention provides a process chamber with the following advantages: the process chamber has a needle support bracket, which is guided by guide posts and limited by limiting parts. The needles are supported by the needle support bracket, so there is no need to set a limiting structure on the top of the needles, which reduces the area of ​​the top end face of the needles and reduces the impact on the process uniformity in the wafer projection area corresponding to the needles, thereby improving the overall process uniformity of the wafer. Furthermore, since there is no limiting structure on the top of the needles in this process chamber, the limiting structure on the top of the needles is not easily jammed with the base due to thermal expansion and contraction, making it difficult to pull out the needles.

[0019] Other features and advantages of the present invention will be described in detail in the following detailed description section. Attached Figure Description

[0020] The above and other objects, features and advantages of the present invention will become more apparent from the more detailed description of exemplary embodiments of the invention in conjunction with the accompanying drawings, wherein the same reference numerals generally represent the same components in the exemplary embodiments of the invention.

[0021] Figure 1 A schematic diagram of the interaction between a rising needle and a base in a semiconductor process device in the prior art.

[0022] Figure 2 A schematic diagram of the rising needle state of a process chamber according to an embodiment of the present invention is shown.

[0023] Figure 3 A schematic diagram of the rising needle falling state of a process chamber according to an embodiment of the present invention is shown.

[0024] Figure 4A schematic diagram of the engagement between the rising needle and the base of a process chamber according to an embodiment of the present invention is shown.

[0025] Figure 5 A schematic diagram of the rising needle of a process chamber according to an embodiment of the present invention is shown.

[0026] Figure 6 A three-dimensional schematic diagram of a needle holder and support structure for a process chamber according to an embodiment of the present invention is shown.

[0027] Figure 7 A front view schematic diagram of a needle holder and support structure for a process chamber according to an embodiment of the present invention is shown.

[0028] Figure 8 It shows Figure 7 A schematic diagram of the cross-sectional structure along direction A.

[0029] Figure 9 A schematic diagram showing a comparison of the projected areas of the riser needle of the present invention and a riser needle in a process chamber in the prior art on a wafer is illustrated.

[0030] Figure 10 It shows in Figure 9 The diagram shows a comparison of the electric field uniformity distribution of the present invention and a prior art process chamber under comparative conditions.

[0031] Explanation of reference numerals in the attached figures:

[0032] 1. Base; 2. Lifting needle; 3. Chamber body; 4. Support plate; 5. Support structure; 6. Guide component; 7. Limiting part; 8. Mating hole; 9. Guide hole; 10. Mating part; 11. Guide part; 12. First guide cone part; 13. Second guide cone part; 14. Support column; 15. Sleeve screw; 16. Locking nut; 17. Spray plate; 18. Lifting column; 19. Bellows; 20. Bottom wall; 21. Wafer; 22. Robotic arm. Detailed Implementation

[0033] Preferred embodiments of the invention will now be described in more detail. While preferred embodiments of the invention are described below, it should be understood that the invention can be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that the invention will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0034] like Figure 2 and Figure 3 As shown, the present invention provides a process chamber for use in semiconductor process equipment, comprising:

[0035] The chamber body 3 is provided with a liftable base 1, multiple lifting needles 2 and lifting needle brackets;

[0036] The base 1 has multiple vertically extending holes penetrating the base 1. Multiple rising pins 2 are mounted on a rising pin bracket and correspondingly inserted into the rising pin holes. A guide member 6 extending vertically is provided on the lower surface of the base 1. The rising pin bracket is slidably connected to the guide member 6 and abuts against the lower end of the guide member 6. The rising pin bracket is used to drive the multiple rising pins 2 to rise and fall when the base 1 is raised and lowered.

[0037] When the base 1 is in the transfer position, the needle support is in contact with the bottom wall 20 of the chamber body 3, and multiple needles 2 extend from the upper surface of the base 1 to support the wafer 20; when the base 1 is in the process position, the needle support is in a limiting fit with the lower end of the guide 3, and the top of the multiple needles 2 is not higher than the upper surface of the base 1.

[0038] Specifically, in a current semiconductor process equipment, the engagement between the rising pin 2 and the base 1 is as follows: Figure 1 As shown, in order to ensure that the lifting pin 2 can move together with the base 1 when the base 1 is raised, the top of the lifting pin 2 is provided with an inverted conical limiting structure that forms a limiting fit with the inverted conical hole on the base 1. This results in a larger area of ​​the top end face of the lifting pin 2, which leads to a decrease in the process uniformity in the wafer projection area corresponding to the lifting pin 2, thereby affecting the overall process uniformity of the wafer. In addition, for example, Figure 1 In the prior art semiconductor process equipment shown, the engagement between the rising needle 2 and the base 1 is problematic. Due to the thermal expansion and contraction of the base 1, during maintenance, the base 1 is in a cold state, and the outer periphery of the limiting structure contacts the wall of the inverted conical hole on the base 1. As a result, the rising needle 2 with the inverted conical limiting structure is easily stuck in the rising needle hole on the base 1 and is not easy to pull out.

[0039] To address the problem in existing technologies where the large area of ​​the top surface of the rising needle 2 leads to poor process uniformity within the wafer projection area corresponding to the rising needle 2, this invention provides a process chamber. This semiconductor process equipment has a rising needle support mounted below a base 1. The rising needle support has a guide hole, and a guide member 6 slides through the guide hole. The rising needle support is guided by the guide member 6, ensuring that it can slide vertically along the guide member 6. The lower end of the guide member 6 has a limiting part 7, which limits the rising needle support. When the base 1 rises to a certain height, the limiting part 7 contacts the lower surface of the rising needle support, achieving [the desired effect]. The lifting needle bracket provides a limiting mechanism; the lifting needle 2 is slidably disposed within the lifting needle hole and supported by the lifting needle bracket, thus eliminating the need for a limiting structure on the top of the lifting needle 2 to ensure that the lifting needle 2 can move together with the base 1 when it is raised. This reduces the area of ​​the top end face of the lifting needle 2, minimizing the impact on the process uniformity within the projected area of ​​the wafer 21 corresponding to the lifting needle 2, thereby improving the overall process uniformity of the wafer 21. Furthermore, since no limiting structure is provided on the top of the lifting needle 2 within the process chamber, the situation where the limiting structure on the top of the lifting needle 2 easily jams with the base 1 due to thermal expansion and contraction, making it difficult to remove the lifting needle, is avoided. Optionally, the lifting needle 2 is cylindrical or conical, and the lifting needle hole slides with the lifting needle 2 to provide guidance for the lifting and lowering of the lifting needle 2.

[0040] Specifically, the shape of the lifting needle hole matches the shape of the lifting needle 2. When the lifting needle 2 is cylindrical, the lifting needle hole is cylindrical; when the lifting needle 2 is conical, the lifting needle hole is conical. The wall of the conical hole can also provide alignment guidance for the lifting needle 2. Even if the lifting needle 2 is slightly off-center relative to the center of the lifting needle hole, it can be gradually aligned when the upper end of the lifting needle 2 passes through the upper surface of the base 1. It should be noted that in order to avoid an excessive gap between the outer circumference of the upper end of the lifting needle 2 and the inner circumference of the lifting needle hole when the upper end of the lifting needle 2 retracts into the lifting needle hole, the taper of both the conical hole and the lifting needle 2 is relatively small, keeping the gap between the outer circumference of the upper end of the lifting needle 2 and the inner circumference of the lifting needle hole less than 0.5 mm when the upper end of the lifting needle 2 retracts into the lifting needle hole.

[0041] Optionally, the needle support includes a support plate 4 and a support structure 5. The support plate 4 is slidably connected to the guide member 6. Multiple needles 2 are disposed on the support plate 4. The support structure 5 is disposed on the side of the support plate 4 away from the base 1. When the base 1 is in the transmission position, the support structure 5 is in contact with the bottom wall 20 of the chamber body 3.

[0042] Specifically, when the base 1 is in the transmission position, the support structure 5 contacts the bottom wall 20 of the chamber body 3. At this time, the upper ends of multiple lifting needles 2 extend from the upper side of the base 1 and lift the wafer 21. The guide provides a guiding function for the support plate 4, thereby realizing the lifting and lowering guidance of the lifting needles 2.

[0043] Optionally, the support structure 5 includes a plurality of support columns 14, which are spaced apart circumferentially along the support plate 4. When the base 1 is in the transmission position, the plurality of support columns 14 are in contact with the bottom wall 20 of the chamber body 3.

[0044] Specifically, the support column 14 forms a columnar boss structure on the lower surface of the support plate 4, which is used to support the bottom wall 20 of the chamber body 3 after the base 1 descends to a certain height. This passively causes the lifting bracket to move relative to the base 1, thereby lifting the lifting needle 2, so that the lifting needle 2 rises relative to the base 1 and can lift the wafer 21 on the base 1.

[0045] Optionally, there are multiple guide members 6, which are spaced apart around the circumference of the base 1. The end of the guide member 6 facing away from the base 1 has an outwardly protruding limiting part 7. When the base 1 is in the process position, the support plate 4 abuts against the limiting part 7.

[0046] Specifically, the guide member 6 is columnar, and the limiting part 7 is located on the lower outer periphery of the guide member 6. It can interfere with the hole wall of the guide through hole on the support plate 4 to limit the support plate 4. When the base 1 rises to a certain height, the limiting part 7 contacts the lower surface of the support plate 4 to form a locking, so that the base 1 can drive the support plate 4 to rise together.

[0047] Optionally, the lifting needle hole includes a mating hole 8 and a guide hole 9 arranged sequentially from top to bottom. The diameter of the mating hole 8 is smaller than the diameter of the guide hole 9. The lifting needle 2 includes a mating part 10 and a guide part 11 arranged sequentially from top to bottom. The mating part 10 is clearance-fitted with the mating hole 8, and the guide part 11 is guide-fitted with the guide hole 9.

[0048] Specifically, such as Figure 4 and Figure 5 As shown, in this embodiment, the needle hole is a stepped hole, the needle 2 is a stepped column, the mating part 10 of the needle 2 is slidably disposed in the mating hole 8, and the guide part 11 of the needle 2 is slidably disposed in the guide hole 9. The mating part 10 and the mating hole 8 are fitted with a clearance fit, and the guide part 11 and the guide hole 9 are fitted with a sliding guide fit to ensure the guiding effect of the needle hole on the needle 2.

[0049] Optionally, the mating hole 8 and the guide hole 9 are connected by a first guide cone surface 12, and the mating part 10 and the guide part 11 are connected by a second guide cone surface 13, with the second guide cone surface 13 and the first guide cone surface 12 providing guiding engagement.

[0050] Specifically, such as Figure 4As shown, the lifting needle hole has a first guide cone surface 12, and the lifting needle 2 has a second guide cone surface 13. As the lifting needle 2 rises relative to the lifting needle hole, the second guide cone surface 13 gradually approaches the first guide cone surface 12 until they come into contact. During this process, the first guide cone surface 12 forms a straightening guide for the second guide cone surface 13. Even if the lifting needle 2 is offset from the center of the lifting needle hole, it can be gradually straightened when the upper end of the lifting needle 2 passes through the upper surface of the base 1.

[0051] Furthermore, regarding such Figure 1 In the prior art semiconductor process equipment shown, the engagement between the rising needle 2 and the base 1 is problematic. Due to the thermal expansion and contraction of the base 1, during maintenance, the base 1 is in a cold state, and the outer periphery of the limiting structure contacts the wall of the inverted conical hole on the base 1. The rising needle 2, with its inverted conical limiting structure, is easily stuck in the rising needle hole on the base 1 and difficult to remove. Therefore, in this invention, the mating part 10 and the mating hole 8 have a clearance fit, which can adopt an F7 / g6 shaft-hole fit tolerance. During maintenance, the fit between the rising needle 2 and the rising needle hole on the base 1 is as follows: Figure 4 As shown, the first guide cone surface 12 does not contact the second guide cone surface 13. By removing the rising needle bracket, the rising needle 2 can be easily removed from below the base 1 without jamming, thus improving the maintainability of the equipment.

[0052] Optionally, the diameter of the mating part 10 is no greater than 2 mm, and the diameter of the mating hole 8 is no greater than 2.5 mm.

[0053] Specifically, the upper end of the rising needle 2 in this invention does not need to be provided with a limiting structure, so the diameter of the mating part 10 at the upper end of the rising needle 2 can be made as small as possible. The diameter of the mating part 10 does not exceed 2mm, and the diameter of the mating hole 8 does not exceed 2.5mm. Compared with... Figure 1 The inverted conical hole on the base 1 in the prior art semiconductor process equipment shown has a significantly reduced opening size on the upper surface of the base 1; this greatly reduces the area of ​​the projection region of the top end face of the rising needle 2 on the wafer 21, thereby reducing its impact on the overall process uniformity of the wafer 21.

[0054] Optionally, the diameter of the guide portion 11 of the rising needle 2 is generally no greater than 10 mm.

[0055] Specifically, the diameter of the guide part 11 is larger than that of the mating part 10, so as to ensure the overall strength and rigidity of the rising needle 2 as much as possible.

[0056] Optionally, the support plate 4 is annular, and the upper surface of the support plate 4 is flat.

[0057] Specifically, the support plate 4 is used to support the lifting needle 2. Its upper surface is flat, ensuring that multiple lifting needles 2 are on the same plane, thereby ensuring that the lifting needles 2 are at the same height.

[0058] Optionally, each of the multiple support columns 14 is provided with a height adjustment component at one end away from the support plate 4. The height adjustment component is used to adjust the height of the top of the multiple rising needles 2 relative to the upper surface of the base 1 when the base 1 is in the transmission position.

[0059] Specifically, the height adjustment component is used to contact the bottom wall 20 of the chamber body 3 when the base 1 is in the transmission position. By adjusting the height adjustment component, the height of the top of the multiple rising needles 2 relative to the upper surface of the base 1 can be adjusted when the base 1 is in the transmission position.

[0060] Optionally, the height adjustment assembly includes a sleeve screw 15 and a locking nut 16. The lower end of the support column 14 is threadedly connected to the sleeve screw 15, and the support column 14 is threadedly connected to the locking nut 16. The locking nut 16 is located above the sleeve screw 15 and is used to lock the position of the sleeve screw 15.

[0061] Specifically, such as Figures 6 to 8 As shown, the lower outer circumference of the support column 14 is provided with an external thread, and the sleeve screw 15 is threadedly connected to the lower end of the support column 14. When it is necessary to adjust the height of the lifting needle 2 when the base 1 is in the wafer transfer state of the wafer 21, the support height of the support plate 4 on the lifting needle 2 can be adjusted by rotating the sleeve screw 15, thereby raising or lowering the height of the lifting needle 2; as shown Figures 6 to 8 As shown, a locking nut 16 is also provided on the support column 14 on the lower surface of the support plate 4. After the adjustment of the sleeve screw 15 is completed, the locking nut 16 is locked to fix the position of the sleeve screw 15 and prevent it from changing position with lifting or lowering, thereby improving the stability of the equipment operation.

[0062] Optionally, a base lifting mechanism is provided below the base 1, which is used to drive the base 1 to move up and down between the transfer position and the process position. A spray plate 17 is provided above the base 1, which is used to spray process gas.

[0063] Specifically, the lifting mechanism includes a lifting column 18 and a lifting drive structure. The lifting column 18 is connected to the lower part of the base 1 and extends downward through the bottom wall 20 of the chamber body 3. An annular support plate 4 is sleeved on the outside of the lifting column 18. A bellows 19 is sleeved on the part of the lifting column 18 located on the outside of the bottom wall 20 of the chamber body 3. The two ends of the bellows 19 are respectively sealed and connected to the lower side of the bottom wall 20 of the chamber body 3 and the lower outer periphery of the lifting column 18. The lifting drive structure is used to drive the lifting column 18 to rise and fall, thereby driving the base 1 and the wafer 21 on it to rise and fall, so that the wafer 21 can move away from and approach the spray plate 17.

[0064] In one example, base 1 is a heating base capable of heating the wafer 21 on it.

[0065] In summary, when the process chamber provided by this invention is in use, the base 1 is initially in a low position (the position for transferring the wafer 21). At this time, the support structure 5 below the support plate 4 presses against the bottom wall 20 of the chamber body 3. Due to the support of the support plate 4, the mating part 10 of the lifting needle 2 extends from the upper surface of the base 1, and the upper end surface of the mating part 10 is higher than the upper surface of the base 1 by a certain height. The robot arm 22 transfers the wafer 21 and places the wafer 21 on the upper end surface of the mating part 10 of the lifting needle 2, and then the robot arm 22 withdraws. Then the base 1 is raised and lowered. The mechanism drives the base 1 to rise. In the first stage, the lifting needle 2 and the support plate 4 do not rise, and the top surface of the lifting needle 2 is lower than the upper surface of the base 1. The wafer 21 is supported by the base 1. When the limiting part 7 contacts the lower surface of the support plate 4, the second stage begins. In the second stage, the lifting needle 2 rises together with the base 1 under the drive of the support plate 4 until the base 1 and the wafer 21 on it are raised to the required gap position. Then the process begins. After the process is completed, the above process is reversed, and finally the robot arm 22 delivers the completed wafer 21. Since this invention no longer uses a heated base to support the lifting needle 2, it is no longer necessary to set a limiting structure on the top of the lifting needle 2 to ensure that the lifting needle 2 can move with the base 1 when it rises. This makes the area of ​​the top end face of the lifting needle 2 much smaller, thereby reducing the projected area of ​​the top end face of the lifting needle 2 on the wafer 21, which is more conducive to the uniform distribution of the electric field and improving the overall process uniformity of the wafer 21. Figure 9 As shown, this is a schematic diagram comparing the projected area of ​​the riser 2 of the present invention and the riser 2 in a semiconductor process apparatus in the prior art on the wafer 21. Figure 10 As shown, in Figure 9 The diagram shows a comparison of the electric field uniformity distribution of the present invention and a prior art semiconductor process equipment under comparative conditions. It is clear that the present invention optimizes the electric field uniformity of the semiconductor process equipment.

[0066] The various embodiments of the present invention have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A process chamber applied to a semiconductor process equipment, characterized in that, The utility model relates to a chamber body is provided with liftable base, multiple lift pins and lift pin bracket in the chamber body, multiple lift pin holes are opened in the base along the vertical direction, multiple lift pins are set up on the lift pin bracket and are correspondingly set in multiple lift pin holes, the lower surface of the base is provided with the guide piece extending along the vertical direction, the lift pin bracket and the guide piece sliding connection and stop at the lower end of the guide piece, the lift pin bracket is used for driving multiple lift pins to lift when the base lifts, wherein, When the base is located in the transmission position, the lift pin bracket is in contact with the bottom wall of the chamber body, and multiple lift pins are extended from the upper surface of the base to support the wafer; when the base is located in the process position, the lift pin bracket is limited to cooperate with the lower end of the guide piece, and the top end of multiple lift pins is not higher than the upper surface of the base; The lift pin hole includes a matching hole and a guide hole arranged in sequence from top to bottom, the hole diameter of the matching hole is smaller than the hole diameter of the guide hole, the lift pin includes a matching part and a guide part arranged in sequence from top to bottom, the guide part is slidingly guided and matched with the guide hole, the matching hole and the guide hole are transitionally connected by a first guide taper part, the matching part and the guide part are transitionally connected by a second guide taper part, and the second guide taper part is guided and matched with the first guide taper part. The lift pin bracket includes a support plate and a support structure, the support plate is slidingly connected with the guide piece, multiple lift pins are arranged on the support plate, and the side of the support plate away from the base is provided with a support structure; when the base is located in the transmission position, the support structure is in contact with the bottom wall of the chamber body. The support structure includes multiple support columns, multiple support columns are arranged along the circumference of the support plate, and when the base is located in the transmission position, multiple support columns are in contact with the bottom wall of the chamber body.

2. The process chamber of claim 1, wherein, The number of guide pieces is multiple, multiple guide pieces are arranged along the circumference of the base, and the end of the guide piece away from the base has a limiting part protruding outward; when the base is located in the process position, the support plate is stopped at the limiting part.

3. The process chamber of claim 2, wherein, The matching part and the matching hole are gap matched.

4. The process chamber of claim 2, wherein, The diameter of the matching part is not greater than 2mm, and the hole diameter of the matching hole is not greater than 2.5mm.

5. The process chamber of claim 1, wherein, The end of multiple support columns away from the support plate is provided with a height adjusting assembly, and the height adjusting assembly is used for adjusting the height of the top end of multiple lift pins relative to the upper surface of the base when the base is located in the transmission position.

6. The process chamber of claim 1, wherein, The height adjusting assembly includes a sleeve screw and a locking nut, the lower end of the support column is threadedly connected with the sleeve screw, the support column is threadedly connected with the locking nut, and the locking nut is arranged above the sleeve screw to lock the position of the sleeve screw.

7. The process chamber of claim 3, wherein, The lower side of the base is provided with a base lifting mechanism, the base lifting mechanism is used for driving the base to lift between the transmission position and the process position, and the upper side of the base is provided with a shower tray, and the shower tray is used for spraying process gas.

8. The process chamber of claim 7, wherein, ​ 9. The process chamber of claim 1, wherein, ​

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