Vertical ion beam angle real-time measurement system and method

Abstract

The present application discloses a real-time measurement system and method for a vertical ion beam angle, which is used in the ion implantation process of a semiconductor manufacturing process, and includes: an ion current sensor device, a drive device, and a reference position sensor. The ion current sensor device receives an ion beam from an ion implanter and generates an ion current value signal. The drive device is connected to the ion current sensor device to rotate the ion current sensor device around a rotation axis within a predetermined sampling angle range. The reference position sensor sets a reference position of the ion current sensor device. When the ion current sensor device rotates to the reference position, the reference position sensor is triggered to generate a reference position signal. During the ion implantation process, the ion current sensor device continuously rotates clockwise and counterclockwise within the sampling angle range with the reference position as the center to form a sampling cycle. During the sampling cycle, the vertical ion beam angle of the ion beam is determined in real time based on the maximum value of the ion current value signal.

Description

Technical Field

[0001] The present application relates to a system and method for measuring a vertical beam angle of an ion implantation process in a semiconductor manufacturing process, and more particularly to a system and method for measuring a vertical beam angle in real time during the implementation of the ion implantation process. Background Art

[0002] Ion implantation is used in semiconductor manufacturing to dope the substrate to produce semiconductor substrates with different properties. The ion beam angle affects the ion implantation dose, and the ion implantation dose is related to the product yield, so the ion beam angle becomes an important parameter affecting ion implantation.

[0003] The existing method of measuring the ion beam angle is to set up multiple Faraday cups on the table, and to deduce the ion beam angle through the ion beam current values ​​measured by the multiple Faraday cups. However, this measurement method can only be performed after the ion implantation process. Therefore, the ion beam angle of each ion implantation process on the semiconductor wafer can only be measured after the batch production is completed. If the ion beam angle changes, it can only be known after each batch production is completed, while the wafers produced in the previous batch have been affected by the change in the ion beam angle, and in severe cases, even cause a decrease in yield. In addition, even if the ion beam angle does not change, the machine must be shut down after each ion implantation process to adjust the ion beam uniformity and measure the ion beam angle, which will affect the efficiency of the machine to a considerable extent. Summary of the invention

[0004] The embodiments of the present application provide a system and method for real-time measurement of vertical ion beam angle, which can measure the vertical ion beam angle of the ion implanter in real time during the implementation of the ion implantation process. Therefore, the vertical ion beam angle of the ion implanter can be detected at any time to match the set value of the ion beam angle predetermined for each semiconductor process, thereby solving the problem that the prior art can only measure the ion beam angle after each batch production and cannot detect and correct the ion beam angle offset in time.

[0005] In order to solve the above technical problems, this application is implemented as follows:

[0006] A vertical ion beam angle real-time measurement system according to an embodiment of the present application is used in the ion implantation process of a semiconductor manufacturing process, and includes: an ion current sensor, a drive device, a reference position sensor, and an ion dose control device. The ion current sensor receives an ion beam from an ion implanter and generates an ion current value signal. The drive device is connected to the ion current sensor so that the ion current sensor rotates around a rotation axis within a predetermined sampling angle range. The reference position sensor sets a reference position of the ion current sensor. When the ion current sensor rotates to the reference position, the reference position sensor is triggered to generate a reference position signal. The ion current value signal, the reference position signal, and the angle value signal are transmitted to the ion dose control device. During the ion implantation process, the ion current sensor continuously rotates clockwise and / or counterclockwise within the sampling angle range with the reference position as the center to form a sampling cycle. During the sampling cycle, the vertical beam angle (vertical beam angle) of the ion beam is determined in real time by the maximum value of the ion current value signal. The ion dose control device calculates the vertical ion beam angle of the ion beam based on the ion current value signal, the reference position signal and the angle value signal, and compares the calculated vertical ion beam angle with the vertical ion beam angle setting value of the ion implanter to determine whether to terminate the ion implantation process.

[0007] The driving device comprises a stepping motor and an encoder. The stepping motor is connected to the ion current sensor and causes the ion current sensor to rotate within a sampling angle range. The encoder measures the rotation angle of the stepping motor and generates an angle value signal.

[0008] The vertical ion beam angle real-time measurement system of the present application also includes a first extreme position measuring component and a second extreme position measuring component. The first extreme position measuring component has a first angle value relative to the ion current sensor device, and the position of the second extreme position measuring component has a second angle value relative to the ion current sensor device. The first angle value and the second angle value determine the extreme angle range of rotation of the ion current sensor device. The angle value signal generated by the encoder is compared with the first angle value and / or the second angle value to correct the rotation angle value of the ion current sensor device.

[0009] The ion dose control device of the present application includes a digital-to-analog conversion unit, a dose control unit and a calculation unit. The digital-to-analog conversion unit converts the ion current value signal, the reference position signal and the angle value signal from analog signals into digital signals. The dose control unit transmits the digitized ion current value signal, the reference position signal and the angle value signal to the calculation unit. The calculation unit calculates the vertical ion beam angle of the ion beam based on the ion current value signal, the reference position signal and the angle value signal, and compares it with the vertical ion beam angle setting value of the ion implanter.

[0010] A real-time measurement method for a vertical ion beam angle according to an embodiment of the present application is used in an ion implantation process of a semiconductor manufacturing process, and includes the following steps: providing an ion current sensing device that can rotate around a rotation axis; during the implementation of the ion implantation process, causing the ion current sensing device to continuously rotate clockwise and / or counterclockwise within a sampling angle range and measure the ion beam current generated by the ion implanter to generate an ion current value signal; determining the vertical ion beam angle of the ion beam in real time based on the maximum value of the ion current value signal within the sampling angle range; and comparing the vertical ion beam angle determined based on the maximum value of the ion current value signal with a vertical ion beam angle setting value of the ion implanter to determine whether to terminate the ion implantation process.

[0011] The real-time measurement method of the vertical ion beam angle of the present application also includes the following steps: measuring the rotation angle of the ion current sensor device to generate an angle value signal; providing a first extreme position measuring piece and a second extreme position measuring piece, setting the positions of the first extreme position measuring piece and the second extreme position measuring piece relative to the ion current sensor device to have a predetermined first angle value and a second angle value, and the first angle value and the second angle value determine the extreme angle range of rotation of the ion current sensor device; comparing the angle signal value measured when the ion current sensor device is rotated to the first extreme position measuring piece and the second extreme position measuring piece with the first angle value and the second angle value to correct the angle signal value.

[0012] The real-time measurement method of vertical ion beam angle of the present application also includes the following steps: if the difference between the vertical ion beam angle and the vertical ion beam angle setting value exceeds a predetermined value, but the predetermined value is exceeded within a predetermined number of times, repeating the step of correcting the angle signal value.

[0013] The real-time measurement method of vertical ion beam angle of the present application also includes the following steps: if the difference between the vertical ion beam angle and the vertical ion beam angle setting value exceeds the predetermined value, and the predetermined value is exceeded a predetermined number of times, the ion implantation process is terminated and the ion implantation machine is inspected.

[0014] The real-time measurement method of the vertical ion beam angle of the present application also includes the following steps: determining a reference position of the ion current sensor device; and determining the sampling angle range with the reference position as the center.

[0015] The real-time measurement system and method of the vertical ion beam angle of the embodiment of the present application, during the implementation of the ion implantation process, the ion current sensor device is continuously rotated forward and reversed within a predetermined sampling angle range by a driving device to form a sampling period, and at the same time, the maximum value of the ion beam current in the sampling period is obtained, and the vertical ion beam angle is determined by the angle corresponding to the maximum value of the ion beam current, so that the vertical ion beam angle is measured in real time during the implementation of the ion implantation process. The measured vertical ion beam angle is compared with the vertical ion beam angle setting value of the ion implanter. If the difference between the measured vertical ion beam angle and the vertical ion beam angle setting value of the ion implanter is greater than the predetermined value, the measured angle value of the ion current sensor device is corrected by the first angle value of the first limit position measuring member and the second angle value of the second limit position measuring member. In addition, if the difference between the measured vertical ion beam angle and the vertical ion beam angle setting value is greater than the predetermined value for many times, the ion implanter is checked. In this way, in mass production, the vertical ion beam angle can be detected and corrected in real time, thereby improving the production yield and the production efficiency of the machine. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0017] Figure 1 is a schematic diagram of a vertical ion beam angle real-time measurement system according to an embodiment of the present application;

[0018] Figure 2 yes Figure 1 Side view of the real-time measurement system for vertical ion beam angle;

[0019] Figure 3 It corresponds to Figure 1 A graph showing the relationship between the ion current value and the angle value measured by the vertical ion beam angle real-time measurement system;

[0020] Figure 4 and Figure 5 It is a flow chart of a method for real-time measurement of vertical ion beam angle according to an embodiment of the present application. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0022] See also Figure 1 and Figure 2 ,in Figure 1 is a schematic diagram of a real-time measurement system for a vertical ion beam angle according to an embodiment of the present application, Figure 2 yes Figure 1 Side view of a vertical ion beam angle real-time measurement system. As shown in the figure, the vertical ion beam angle real-time measurement system 1 of the present embodiment includes an ion current sensor device 10, a drive device 20 and a reference position sensor 30. The ion current sensor device 10 is arranged downstream of the ion beam action path generated by the ion implanter, and has an ion current sensor, such as a Faraday cup, which receives the ion beam I from the ion implanter and generates an ion current value signal Sic. The value of the ion current value signal Sic is positively correlated with the size of the ion beam density. As shown in FIG. Figure 2 As shown, the driving device 20 includes a stepping motor 21 and an encoder 22. The output shaft of the stepping motor 21 is connected to the ion current sensor device 10, so that the ion current sensor device 10 rotates around the rotation axis L. The encoder 22 measures the rotation position of the stepping motor 21 and generates an angle value signal Sa. The reference position sensor 30 sets the reference position of the ion current sensor device 10. When the ion current sensor device 10 rotates to the reference position, the reference position sensor 30 is triggered to generate a reference position signal Sm. The angle value of the ion current sensor device 10 rotating from the reference position can be determined by the angle value signal Sa and the reference position signal Sm.

[0023] The vertical ion beam angle real-time measurement system 1 of the present embodiment further includes a first limit position measurement member 40 and a second limit position measurement member 50. The position of the first limit position measurement member 40 has a predetermined first angle value relative to the ion current sensor device 10, and the position of the second limit position measurement member 50 has a predetermined second angle value relative to the ion current sensor device 10. The first limit position measurement member 40 and the second limit position measurement member 50 determine the limit angle range of rotation of the ion current sensor device 10. The first angle value of the present embodiment is +45°, and the second angle value is -45°, that is, the ion current sensor device 10 is limited to rotate within the range of ±45°. The first limit position measuring member 40 and the second limit position measuring member 50 of the present embodiment are stop members. When the ion current sensor device 10 rotates to the position of the first limit position measuring member 40 or the second limit position measuring member 50, the first limit position measuring member 40 or the second limit position measuring member 50 stops the ion current sensor device 10, causing the stepping motor 21 to generate an overcurrent, thereby obtaining the exact position of the ion current sensor device 10. At this time, the angle value signal generated by the encoder 22 is compared with the first angle value of the first limit position measuring member 40 or the second angle value of the second limit position measuring member 50 to determine whether the angle value signal generated by the encoder 22 is consistent with the actual rotation angle value of the ion current sensor device 10, thereby correcting the angle value signal generated by the encoder 22.

[0024] In another embodiment, the first limit position measuring member 40 and the second limit position measuring member 50 may also be limit switches. When the ion current sensor device 10 rotates to the position of the first limit position measuring member 40 or the second limit position measuring member 50, the ion current sensor device 10 triggers the first limit position measuring member 40 and the second limit position measuring member 50 to generate a trigger signal, thereby knowing the exact position of the ion current sensor device 10.

[0025] When setting up the vertical ion beam angle real-time measurement system 1 of the present embodiment, first set the reference position sensor 30, and use the position where the ion current sensor device 10 rotates to trigger the reference position sensor 30 as the reference position, then connect the stepper motor 21 and the encoder 22 to the ion current sensor device 10, and then drive the ion current sensor device 10 to rotate by the stepper motor 21. When the ion current sensor device 10 rotates to the positions of the first limit position measuring member 40 and the second limit position measuring member 50, the ion current sensor device 10 triggers the first limit position measuring member 40 and the second limit position measuring member 50 respectively, so as to correct the angle value signal generated by the encoder 22.

[0026] The vertical ion beam angle real-time measurement system 1 of the present embodiment also includes an ion dose control device 60. The ion dose control device 60 includes a digital analog conversion unit (AD / IO controller) 61, a dose control unit (dosecontroller) 62 and a calculation unit (computer) 63. The digital analog conversion unit 61 converts the ion current value signal Sic, the reference position signal Sm and the angle value signal Sa from analog signals into digital signals, and the dose control unit 62 transmits the digitized ion current value signal Sic, the reference position signal Sm and the angle value signal Sa to the calculation unit 63, and the calculation unit 63 calculates the vertical ion beam angle of the ion beam according to the ion current value signal Sic, the reference position signal Sm and the angle value signal Sa, and compares it with the vertical ion beam angle setting value of the ion implanter. The digital analog conversion unit 61 is a digital analog conversion chip, the dose control unit 62 can be a microprocessor, and the calculation unit 63 can be a calculator device, such as a computer.

[0027] In the ion implantation process, the vertical ion beam angle real-time measurement system 1 of the present embodiment is used. Before the ion beam I is implanted into the wafer W, the stepper motor 21 causes the ion current sensor device 10 to continuously rotate clockwise and / or counterclockwise within the sampling angle range with the reference position as the center, and simultaneously receives the ion beam generated by the ion implanter in real time, and generates an ion current value signal Sic. The sampling angle range of the present embodiment is, for example, ±30°, that is, the ion current sensor device 10 continuously rotates from -30° to +30°, and then rotates from +30° to -30°, thus forming a sampling cycle. The vertical ion beam angle real-time measurement system 1 of the present embodiment can cause the ion current sensor device 10 to rotate and receive the ion beam in real time during the sampling cycle to generate the ion current value signal Sic during the mass production process.

[0028] See also Figure 3 , which corresponds to Figure 1 The relationship between the ion current value and the angle value measured by the vertical ion beam angle real-time measurement system is shown in the graph. The maximum value of the ion beam current received by the ion current sensor device 10 indicates that the ion current sensor device 10 corresponds to the vertical ion beam angle, so Figure 3 The angle value signals E11 and E12 generated by the encoder 22 corresponding to the peak value of the ion beam current are used to obtain the vertical ion beam angle.

[0029] See also Figure 4 and Figure 5 , which is a flow chart of a method for real-time measurement of a vertical ion beam angle according to an embodiment of the present application. In step S1, the ion beam uniformity is adjusted to meet the ion beam uniformity standard. Then, the process proceeds to step S2.

[0030] In step S2, the stepper motor 21 rotates the ion current sensor device 10, and compares the angle value signal Sa measured by the encoder 22 with the first angle value of the first limit position measuring member 40 and the second angle value of the second limit position measuring member 50. If the error exceeds the predetermined numerical range, for example, the error exceeds the range of ±0.3°, then step S3 is entered. If the error is within the predetermined numerical range, for example, the error is within the range of ±0.3°, it means that the ion current sensor device 10 can operate normally, then step S4 is entered.

[0031] In step S3 , the warning signal is transmitted to the calculation unit 63 through the digital-to-analog conversion unit 61 , and the warning information is displayed. The engineer adjusts the ion current sensor device 10 and the driving device 20 .

[0032] In step S4, the ion current sensor device 10 is started and the ion implantation process begins. As described above, in each sampling cycle, the ion current sensor device 10 is continuously rotated clockwise and counterclockwise within the sampling angle range to receive the ion beam I from the ion implanter and generate the ion current value signal Sic. Then, the process proceeds to step S5.

[0033] In step S5, the measured ion current value signal Sic, reference position signal Sm and angle value signal Sa are converted into digital signals by the digital-to-analog conversion unit 61. Then, the process proceeds to step S6.

[0034] In step S6, the dose control unit 62 transmits the digitized ion current value signal Sic, the reference position signal Sm and the angle value signal Sa to the calculation unit 63. The calculation unit 63 obtains the angle value of the ion current sensor device 10 corresponding to the peak value of the ion current value signal according to the ion current value signal Sic, the reference position signal Sm and the angle value signal Sa, and obtains the vertical ion beam angle accordingly. Then, the process proceeds to step S7.

[0035] In step S7, the calculation unit 63 compares the calculated vertical ion beam angle with the set value of the vertical ion beam angle of the ion implanter. If the difference between the two is within a predetermined range, for example, the difference between the two is within 1% of the set value of the vertical ion beam angle, the process proceeds to step S8. The ion implantation process continues normally. If the difference between the two exceeds the predetermined range, for example, the difference between the two is greater than 1% of the set value of the vertical ion beam angle, the process proceeds to step S9.

[0036] In step S8 , the ion implantation process is performed normally until the ion implantation process is completed.

[0037] In step S9, it is determined whether the number of times that the error between the calculated vertical ion beam angle and the set value of the vertical ion beam angle of the ion implanter exceeds the predetermined value range exceeds a predetermined number of times, for example, the predetermined number of times is 2 times. If it exceeds the predetermined number of times, the process proceeds to step S10. If it does not exceed the predetermined number of times, the process proceeds to step S11.

[0038] In step S10, the ion implantation process is stopped, a warning message is displayed, and the ion implantation machine is inspected.

[0039] In step S11, the number of times the error between the calculated vertical ion beam angle and the set value of the vertical ion beam angle of the ion implanter exceeds the predetermined numerical range is increased by 1, and then the process returns to step S1, and the ion beam uniformity detection is repeated to confirm the state of the ion current sensor device 10, and then the vertical ion beam angle is continuously measured in real time during the ion implantation process, and compared with the set value of the ion implanter.

[0040] The real-time measurement system and method of the vertical ion beam angle of the embodiment of the present application, during the implementation of the ion implantation process, the ion current sensor device is continuously rotated forward and reversed within a predetermined sampling angle range by a driving device to form a sampling period, and at the same time, the maximum value of the ion beam current in the sampling period is obtained, and the vertical ion beam angle is determined by the angle corresponding to the maximum value of the ion beam current, so that the vertical ion beam angle is measured in real time during the implementation of the ion implantation process. The measured vertical ion beam angle is compared with the vertical ion beam angle setting value of the ion implanter. If the difference between the measured vertical ion beam angle and the vertical ion beam angle setting value of the ion implanter is greater than the predetermined value, the measured angle value of the ion current sensor device is corrected by the first angle value of the first limit position measuring member and the second angle value of the second limit position measuring member. In addition, if the difference between the measured vertical ion beam angle and the vertical ion beam angle setting value is greater than the predetermined value for many times, the ion implanter is checked. In this way, in mass production, the vertical ion beam angle can be detected and corrected in real time, thereby improving the production yield and the production efficiency of the machine.

[0041] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0042] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A real-time measurement system for vertical ion beam angle, used in the ion implantation process of semiconductor manufacturing process, characterized in that: include: An ion current sensor (10) receives an ion beam from an ion implanter and generates an ion current value signal; A driving device (20) connected to the ion current sensor device (10) to enable the ion current sensor device (10) to rotate around a rotation axis within a predetermined sampling angle range; The ion current sensor device (10) continuously rotates from -30° to +30°, and then rotates from +30° to -30°, forming a sampling cycle. The driving device (20) comprises a stepping motor (21) and an encoder (22). The stepping motor (21) is connected to the ion current sensor device (10) and causes the ion current sensor device (10) to rotate within the sampling angle range. The encoder (22) measures the rotation angle of the stepping motor (21) and generates an angle value signal. A reference position sensor (30) is used to set a reference position of the ion current sensor device (10), and when the ion current sensor device (10) rotates to the reference position, the reference position sensor (30) is triggered to generate a reference position signal; as well as an ion dose control device (60), wherein the ion current value signal, the reference position signal and the angle value signal are transmitted to the ion dose control device (60); During the ion implantation process, the ion current sensor (10) determines the vertical ion beam angle of the ion beam in real time; the ion dose control device (60) calculates the vertical ion beam angle of the ion beam and compares the calculated vertical ion beam angle with the vertical ion beam angle setting value of the ion implanter to determine whether to terminate the ion implantation process; During the ion implantation process, the ion current sensor device (10) continuously rotates clockwise and counterclockwise within the sampling angle range with the reference position as the center to form the sampling cycle. During the sampling cycle, the vertical ion beam angle of the ion beam is determined in real time based on the maximum value of the ion current value signal. The ion dose control device (60) comprises a digital-to-analog conversion unit (61), a dose control unit (62) and a calculation unit (63). The digital-to-analog conversion unit (61) converts the ion current value signal, the reference position signal and the angle value signal from analog signals into digital signals. The dose control unit (62) transmits the digitized ion current value signal, the reference position signal and the angle value signal to the calculation unit (63). The calculation unit (63) calculates the vertical ion beam angle of the ion beam according to the ion current value signal, the reference position signal and the angle value signal, and compares it with the vertical ion beam angle setting value of the ion implanter.

2. The vertical ion beam angle real-time measurement system according to claim 1, characterized in that: The ion dose control device (60) calculates the vertical ion beam angle of the ion beam according to the ion current value signal, the reference position signal and the angle value signal.

3. The vertical ion beam angle real-time measurement system according to claim 1, characterized in that: The invention also comprises a first limit position measuring member (40) and a second limit position measuring member (50), wherein the first limit position measuring member (40) has a first angle value relative to the ion current sensor device (10), and the position of the second limit position measuring member (50) has a second angle value relative to the ion current sensor device (10), wherein the first angle value and the second angle value determine the limit angle range of rotation of the ion current sensor device (10), and the angle value signal generated by the encoder (22) is compared with the first angle value and the second angle value to correct the rotation angle value of the ion current sensor device (10).

4. A method for real-time measurement of vertical ion beam angle, used in the ion implantation process of semiconductor manufacturing process, characterized in that: The following steps are involved: Providing an ion current sensing device (10) rotatable about a rotation axis; During the ion implantation process, the ion current sensor device (10) is caused to continuously rotate forward and reverse within a predetermined sampling angle range by a driving device (20) to form a sampling cycle; The ion current sensor device (10) continuously rotates from -30° to +30°, and then rotates from +30° to -30°, forming a sampling cycle. The driving device (20) comprises a stepping motor (21) and an encoder (22). The stepping motor (21) is connected to the ion current sensor device (10) and causes the ion current sensor device (10) to rotate within the sampling angle range. The encoder (22) measures the rotation angle of the stepping motor (21) and generates an angle value signal. During the ion implantation process, the ion current sensor device (10) is rotated continuously clockwise and counterclockwise within the sampling angle range and the ion beam current generated by the ion implanter is measured to generate an ion current value signal; Determining the vertical ion beam angle of the ion beam in real time based on the maximum value of the ion current value signal within the sampling angle range; as well as The vertical ion beam angle determined according to the maximum value of the ion current value signal is compared with a vertical ion beam angle setting value of the ion implanter to determine whether to terminate the ion implantation process.

5. The method for real-time measurement of vertical ion beam angle according to claim 4, characterized in that: The following steps are also included: Measuring the rotation angle of the ion current sensor device (10) to generate the angle value signal; A first limit position measuring member (40) and a second limit position measuring member (50) are provided, and the positions of the first limit position measuring member (40) and the second limit position measuring member (50) are set to have a predetermined first angle value and a second angle value relative to the ion current sensor device (10), and the first angle value and the second angle value determine the limit angle range of rotation of the ion current sensor device (10); and The angle value signal measured when the ion current sensor device (10) is rotated to the first limit position measuring member (40) and the second limit position measuring member (50) is compared with the first angle value and the second angle value to correct the angle value signal.

6. The method for real-time measurement of vertical ion beam angle according to claim 4, characterized in that: If the difference between the vertical ion beam angle and the vertical ion beam angle setting value exceeds a predetermined value, but the predetermined value is exceeded within a predetermined number of times, the step of correcting the angle value signal is repeated.

7. The method for real-time measurement of vertical ion beam angle according to claim 4, characterized in that: If the difference between the vertical ion beam angle and the vertical ion beam angle setting value exceeds a predetermined value, and the predetermined value is exceeded a predetermined number of times, the ion implantation process is terminated and the ion implanter is inspected.

8. The method for real-time measurement of vertical ion beam angle according to claim 4, characterized in that: The following steps are also included: determining a reference position of the ion current sensor device (10); and The sampling angle range is determined with the reference position as the center.

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