Semiconductor processing apparatus

Abstract

The application discloses a semiconductor process equipment. In the disclosed semiconductor process equipment, a process door is connected to an opening of a cavity, the process door is used for covering the opening and forms a process chamber together with the cavity; a driving device is arranged on the process door and connected to a wafer boat support part arranged in the process chamber, and is used for driving the wafer boat support part to rotate; the process door is provided with an air inlet channel, a protective gas pipeline is arranged on the cavity, a first port of the air inlet channel is adjacent to the driving device, and the protective gas pipeline is used for conveying an isolation process gas and the driving device; in a state that the process door and the cavity form the process chamber, a second port of the air inlet channel is connected to the protective gas pipeline; and a first heating device is connected to a part of the protective gas pipeline exposed to the cavity and is used for heating the protective gas pipeline. The above scheme can solve the problem that the deposition of by-products is more serious when the protective gas enters the process chamber without reaching the preset temperature.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor process equipment, and particularly relates to a semiconductor process equipment. BACKGROUND

[0002] As a main equipment for processing wafers, the semiconductor process equipment can have various process gases in the process chamber, including corrosive gases such as hydrogen chloride gas. In order to prevent the corrosive gases from corroding the driving device in the semiconductor process equipment, in the related art, a protective gas is used to isolate the corrosive gases from the driving device. In addition, in order to avoid the deposition of by-products in the process chamber from affecting the wafers to be processed, the protective gas entering the process chamber needs to be heated to a preset temperature or above.

[0003] In the related art, the pipeline of the protective gas is arranged on the process door, and the process door is movably connected to the cavity through a motion drag chain. Part of the pipeline is arranged in the motion drag chain. The repeated movement of the motion drag chain makes it impossible to heat the pipeline in the motion drag chain. In addition, the space where the process door is located is small, so that the length of the pipeline that can be heated is short. As a result, the protective gas enters the process chamber before reaching the preset temperature, that is, the protective gas enters the process chamber at a low temperature, which causes the deposition of by-products in the process chamber to be more serious. SUMMARY

[0004] The purpose of the embodiments of the present application is to disclose a semiconductor process equipment, which can solve the problem that the protective gas in the background art enters the process chamber before reaching the preset temperature, causing the deposition of by-products in the process chamber to be more serious.

[0005] In order to solve the above technical problems, the present application is implemented as follows:

[0006] In a first aspect, the embodiments of the present application disclose a semiconductor process equipment, which comprises a cavity, a process door, a driving device, a wafer boat support part, a protective gas pipeline and a first heating device.

[0007] The process door is connected to the opening of the cavity, and is used to cover the opening and form a process chamber with the cavity.

[0008] The driving device is arranged on the process door and connected to the wafer boat support part arranged in the process chamber, and is used to drive the wafer boat support part to rotate.

[0009] The process door is provided with an air inlet channel, the protective gas pipeline is arranged on the cavity, and a first port of the air inlet channel is adjacent to the driving device, so as to convey the protective gas for isolating the process gas from the driving device.

[0010] When the process door and the cavity body enclose the process chamber, the second port of the air inlet channel is connected to the protective gas pipeline;

[0011] The first heating device is connected to the portion of the protective gas pipeline exposed to the cavity and is used to heat the protective gas pipeline.

[0012] The technical solution adopted in this application can achieve the following beneficial effects:

[0013] The semiconductor process equipment disclosed in the embodiment of the present application improves the structure of the semiconductor process equipment in the related art. By arranging the protective gas pipeline on the cavity, the cavity with an opening does not need to be moved in the process of forming a process chamber with the process door, thereby avoiding the movement of the protective gas pipeline arranged on the cavity, and there is a large space outside the cavity, so that the protective gas pipeline can be arranged with a longer pipeline outside the cavity, so that the first heating device can heat the longer protective gas pipeline, and then the first heating device can heat the protective gas in the protective gas pipeline to a preset temperature before it is introduced into the process chamber, thereby avoiding the problem of the protective gas being introduced into the process chamber without reaching the preset temperature, causing more serious deposition of by-products in the process chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a cross-sectional view of a semiconductor process equipment disclosed in an embodiment of the present application;

[0015] Figure 2 1 is a schematic diagram of the semiconductor process equipment disclosed in an embodiment of the present application when the process gate is separated from the chamber;

[0016] Figure 3 yes Figure 2 An enlarged schematic diagram of a part of the structure;

[0017] Figure 4 It is a schematic diagram of the three-dimensional structure of the semiconductor process equipment disclosed in the embodiment of the present application.

[0018] Description of reference numerals:

[0019] 100 - cavity, 110 - cavity body, 111 - opening, 120 - flange, 121 - connecting channel, 130 - cavity sealing surface;

[0020] 200 - process door, 210 - air inlet channel, 211 - first port, 212 - second port, 213 - annular sink, 214 - air inlet channel body;

[0021] 300-drive device;

[0022] 400-crystal boat support, 410-rotating shaft, 420-support tray;

[0023] 500-shielding gas pipeline;

[0024] 610-first heating device, 620-second heating device;

[0025] 700-process chamber;

[0026] 800-sealing assembly, 810-first sealing ring, 820-second sealing ring;

[0027] 910-air outlet gap, 920-first assembly gap, 930-second assembly gap;

[0028] 1000-Fixed framework. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0030] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0031] The semiconductor process equipment disclosed in the embodiments of the present application will be described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0032] like Figures 1 to 4 As shown, an embodiment of the present application discloses a semiconductor process equipment, which includes a chamber 100 , a process door 200 , a driving device 300 , a wafer boat support 400 , a protective gas pipeline 500 and a first heating device 610 .

[0033] The process door 200 is connected to the opening 111 of the cavity 100, so that the process door 200 can block or open the opening 111 through the cooperation between the process door 200 and the opening 111, that is, different cooperation between the process door 200 and the opening 111 can make the cavity 100 in a closed state or an open state. Optionally, the cavity 100 and the process door 200 can be movably connected, and the process door 200 can be rotated or moved relative to the cavity 100, so that the process door 200 is rotated from the blocking position of the opening 111 to the open position. The movable connection between the process door 200 and the cavity 100 can facilitate the process door 200 to rotate or move relative to the cavity 100 again, thereby achieving the blocking of the opening 111.

[0034] When the process door 200 is connected to the opening 111 of the chamber 100, the process door 200 is used to cover the opening 111, so that the process door 200 and the chamber 100 can enclose the process chamber 700. The process chamber 700 is a reaction chamber for the wafers to be processed. The wafer boat support portion 400 is disposed in the process chamber 700. The wafer boat support portion 400 can be placed on the wafer boat support portion 400 to indirectly support the wafers to be processed. The drive device 300 is disposed on the process door 200 and is connected to the wafer boat support portion 400 placed in the process chamber 700. It is used to drive the wafer boat support portion 400 to rotate to ensure consistent process conditions during the process. During the operation of the semiconductor process equipment, there is process gas for processing the wafers to be processed in the process chamber 700, and a wafer boat carrying the wafers to be processed can be placed on the wafer boat support part 400. The driving device 300 can drive the wafer boat support part 400 to rotate, so that the wafer boat support part 400 can drive the wafers to be processed to rotate together, so that the process gas can achieve more uniform processing of the wafers to be processed.

[0035] A protective gas is introduced into the protective gas pipeline 500. The protective gas may be an inert gas. Specifically, the protective gas may be nitrogen. The protective gas may also be other types of gases. The embodiment of the present application does not impose any specific restrictions on the type of the protective gas. The process door 200 is provided with an air inlet channel 210, and a protective gas pipeline 500 is provided on the cavity 100. When the process door 200 covers the opening 111 of the cavity 100, that is, when the process door 200 and the cavity 100 form a process chamber 700, the second port 212 of the air inlet channel 210 is docked with the protective gas pipeline 500, so that the protective gas in the protective gas pipeline 500 can pass into the air inlet channel 210 of the process door 200, and the first port 211 of the air inlet channel 210 is adjacent to the driving device 300, so that the protective gas in the protective gas pipeline 500 can be purged toward the driving device 300 through the first port 211. That is to say, the protective gas pipeline 500 and the air inlet channel 210 can play the role of transporting and isolating the protective gas from the process gas and the driving device 300, thereby preventing the corrosive gas in the process gas from contacting the driving device 300 and thereby corroding the driving device 300.

[0036] In an optional solution, when at least a portion of the process door 200 is separated from the chamber 100 and the opening 111 is opened, the second port 212 of the gas inlet channel 210 is separated from the protective gas pipeline 500 .

[0037] The first heating device 610 is connected to the portion of the protective gas pipeline 500 exposed to the chamber 100 and is used to heat the protective gas pipeline 500, so that the first heating device 610 can heat the portion of the protective gas pipeline 500 exposed to the chamber 100. In addition, since there is a larger space outside the chamber 100 than at the bottom of the process door 200, and the opening 111 of the chamber 100 does not need to be moved during the process of cooperating with the process door 200, the protective gas pipeline 500 can be arranged as a longer pipeline outside the chamber 100, so that the first heating device 610 can heat the longer protective gas pipeline 500, thereby ensuring that the protective gas in the protective gas pipeline 500 can be heated to above the preset temperature by the first heating device 610 during the process of passing through the longer pipeline, thereby solving the problem of serious by-product deposition in the process chamber 700 due to the low temperature of the protective gas entering the process chamber 700. Depending on the actual requirements of the reaction in the process chamber 700, the preset temperature may be different. In the present application, the preset temperature may be 150°C. Of course, the preset temperature may also be other temperature values. The embodiments of the present application do not limit the specific value of the preset temperature.

[0038] The semiconductor process equipment disclosed in the embodiment of the present application improves the structure of the semiconductor process equipment in the related art. By arranging the shielding gas line 500 on the chamber 100, the chamber 100 having the opening 111 does not need to move in the process of enclosing the process chamber 700 with the process door 200, thereby avoiding the shielding gas line 500 arranged on the chamber 100 from moving, and also avoiding the shielding gas line 500 being arranged in the drag chain and being mostly blocked. There is a large space outside the chamber 100, so that the shielding gas line 500 can be arranged with a longer length outside the chamber 100, so that the first heating device 610 can heat the shielding gas line 500 with a longer length, and then the first heating device 610 can heat the shielding gas in the shielding gas line 500 to a preset temperature before it is introduced into the process chamber 700, thereby avoiding the shielding gas from being introduced into the process chamber 700 before reaching the preset temperature, causing a more serious problem of by-product deposition in the process chamber 700.

[0039] In the semiconductor process equipment disclosed in the embodiments of the present application, the chamber 100 may include a chamber body 110 and a flange 120. The chamber body 110 defines an opening 111. The flange 120 is connected to the chamber body 110 and disposed around the opening 111. The flange 120 protrudes in a direction away from the central axis of the opening 111. In this case, in an optional technical solution, the shielding gas line 500 may be disposed on the flange 120 and pass through the flange 120 to connect with the second port 212, thereby preventing the shielding gas line 500 from damaging the structural strength of the chamber body 110. To achieve a good connection between the shielding gas line 500 and the gas inlet channel 210, in another optional technical solution, the flange 120 may define a connecting channel 121. The shielding gas line 500 is connected to the flange 120 and connects with the second port 212 through the connecting channel 121. The above solutions can achieve a good connection between the protective gas pipeline 500 and the air inlet channel 210 without damaging the chamber body 110. Herein, the central axis of the opening 111 is the central axis perpendicular to the plane where the opening 111 is located.

[0040] In an optional embodiment, the flange 120 and the cavity body 110 can be an integrated structure. Of course, the two can also be split structures and connected by assembly.

[0041] In order to ensure that the cavity 100 has better sealing performance with the process door 200 when it is connected to the process door 200, in a further technical solution, the end face of the opening 111 of the cavity body 110 can be coplanar with the surface of the flange 120 on the same side, and form a cavity sealing surface 130. A sealing component 800 is provided between the cavity sealing surface 130 and the corresponding surface of the process door 200, and the process door 200 is sealed with the cavity sealing surface 130 through the sealing component 800.

[0042] In the above case, the cavity sealing surface 130 includes the end surface of the cavity body 110 where the opening 111 is located and the surface of the flange 120 opposite the process door 200. Therefore, compared with using only the surface of the cavity body 110 where the opening 111 is located or using only the surface of the flange 120 opposite the process door 200, the cavity sealing surface 130 in the embodiment of the present application has a larger area, thereby facilitating the connection and sealing between the cavity 100 and the process door 200 through the cavity sealing surface 130. Optionally, the sealing assembly 800 can be provided only between the flange 120 and the process door 200, or only between the end surface where the opening 111 is located and the process door 200, or partially between the process door 200 and the flange 120, and the other part between the end surface where the opening 111 is located and the process door 200. The present application does not limit the specific location of the sealing assembly 800.

[0043] The sealing assembly 800 can be constructed in various ways. A more specific sealing assembly 800 is provided in the semiconductor process equipment disclosed in the embodiment of the present application. Specifically, the sealing assembly 800 may include a first sealing ring 810 and a second sealing ring 820. The second sealing ring 820 is arranged around the first sealing ring 810, and the second port 212 is located between the first sealing ring 810 and the second sealing ring 820. The first sealing ring 810 and the second sealing ring 820 are both sealed between the process door 200 and the cavity sealing surface 130. In this case, the cavity 100 can achieve double sealing in the circumferential direction of the process door 200 through the first sealing ring 810 and the second sealing ring 820 and the process door 200, thereby ensuring the sealing performance when the cavity 100 and the process door 200 are connected. In addition, since the second port 212 is located between the first sealing ring 810 and the second sealing ring 820, when the protective gas flows through the second port 212, the first sealing ring 810 and the second sealing ring 820 can seal the protective gas at the second port 212, thereby preventing the protective gas at the second port 212 from overflowing out of the cavity 100 or directly entering the process chamber 700.

[0044] In addition, since the second port 212 delivers protective gas, the protective gas can act as a gas seal. The gas seal, in conjunction with the first sealing ring 810 and the second sealing ring 820, can undoubtedly further improve the assembly seal between the chamber 100 and the process door 200. In this case, the process gas can serve two purposes.

[0045] In the semiconductor process equipment disclosed in the embodiment of the present application, the air inlet channel 210 may include an air inlet channel body 214 and an annular groove 213. The first channel body port of the air inlet channel body 214 is opened on the bottom wall of the annular groove 213. The second channel body port of the air inlet channel body 214 is the first port 211. The notch of the annular groove 213 is the second port 212. The process gate 200, the cavity 100, the first sealing ring 810 and the second sealing ring 820 form a first assembly gap 920. The first assembly gap 920 surrounds the first sealing ring 810. The annular groove 213 is opposite to and connected to the first assembly gap 920.

[0046] In the above situation, the shielding gas in the shielding gas pipeline 500 can pass through the notch of the annular trough 213 and flow into the first channel body port of the inlet channel body 214. As a result, the shielding gas reaching the first channel body port can flow along the inlet channel body 214 toward the second channel body port of the inlet channel body 214, thereby allowing the shielding gas to enter the process chamber 700 from the first port 211. At the same time, because the first assembly gap 920 surrounding the first sealing ring 810 is opposite to and connected to the annular trough 213, the space near the first assembly gap 920 is widened in disguise, thereby making the gas in the first assembly gap 920 more fluid. Therefore, when the process chamber 700 requires a vacuum environment, the gas in both the first assembly gap 920 and the annular trough 213 can be relatively easily extracted, which helps to improve the efficiency of vacuum extraction in the process chamber 700.

[0047] In a further technical solution, there may be multiple inlet channel bodies 214, with the first channel body port of each inlet channel body 214 being located on the bottom wall of the annular trough 213, and the second channel body port of each inlet channel body 214 being the first port 211. In this case, protective gas can enter the process chamber 700 through the multiple inlet channel bodies 214, thereby facilitating protection of the drive device 300 by the protective gas. Furthermore, to ensure more comprehensive protection of the drive device 300 by the protective gas, the multiple second channel body ports of the multiple inlet channel bodies 214 may be located around the drive device 300, allowing the protective gas to purge the entire perimeter of the drive device 300. This further prevents the corrosive gas in the process chamber 700 from coming into contact with the drive device 300 and causing corrosion thereto.

[0048] In an alternative technical solution, the projection of the connecting channel 121 along its central axis can be located within the annular recessed groove 213. The connecting channel 121 communicates with the annular recessed groove 213 via a first assembly gap 920. The first dimension of the connecting channel 121 is smaller than the width of the notch of the annular recessed groove 213. The first dimension is the width of the connecting channel 121 in the notch direction. In this case, the port where the connecting channel 121 connects to the annular recessed groove 213 is smaller than the notch of the annular recessed groove 213, thereby facilitating the rapid transfer of all shielding gas transported in the connecting channel 121 through the annular recessed groove 213 into the main inlet channel 214. At the same time, the annular groove 213 has a larger cross-sectional area (i.e., the area of ​​the cross section perpendicular to the central axis) than the connecting channel 121, so that the annular groove 213 occupies a larger space as a whole, which is conducive to the flow of gas between the first assembly gap 920 and the annular groove 213. When the process chamber 700 requires a vacuum environment, the annular groove 213 occupying a larger space can reduce the resistance to gas flow, help to completely extract the gas in the first assembly gap 920, and can further improve the efficiency of vacuuming when vacuuming the process chamber 700.

[0049] In the semiconductor process equipment disclosed in the embodiment of the present application, the semiconductor process equipment may further include a second heating device 620, which is arranged on the outer surface of the process door 200 facing away from the process chamber 700. The second heating device 620 is used to heat the protective gas flowing through the air inlet channel 210, so that the protective gas that has been heated to above the preset temperature in the protective gas pipeline 500 can be continuously heated while flowing through the air inlet channel 210, thereby better avoiding the protective gas heated to above the preset temperature from dropping below the preset temperature while flowing through the air inlet channel 210.

[0050] The first heating device 610 that can heat the shielding gas line 500 can be of various types. The present embodiment provides an optional solution. In a specific technical solution, the first heating device 610 can be a heating tape wrapped around the shielding gas line 500. In this case, the heating tape can be directly wrapped around the shielding gas line 500, thereby ensuring a closer distance between the heating tape and the shielding gas in the shielding gas line 500. This helps improve the shielding gas heating efficiency of the first heating device 610. Furthermore, wrapping the heating tape around the shielding gas line 500 reduces space usage. The first heating device 610 can also be a heating wire that can be wrapped around the shielding gas line 500 to heat the shielding gas line 500. Of course, depending on actual needs, the first heating device 610 can also include both a heating tape and a heating wire, thereby facilitating heating the shielding gas to a temperature above a predetermined temperature. The present embodiment does not limit the specific method by which the first heating device 610 heats the shielding gas in the shielding gas line 500.

[0051] In the semiconductor process equipment disclosed in the embodiment of the present application, the crystal boat support part 400 may include a rotating shaft 410 and a support tray 420, the rotating shaft 410 is connected to the support tray 420, the driving device 300 is connected to the rotating shaft 410, the support tray 420 can rotate with the rotating shaft 410, the process door 200 may be provided with a mounting hole, the driving device 300 is installed in the mounting hole, the first port 211 is provided on the hole wall of the mounting hole, a second assembly gap 930 is provided between the driving device 300 and the hole wall, the first port 211 is connected to the second assembly gap 930, an air outlet gap 910 is formed between the rotating shaft 410 and the process door 200, and the air outlet gap 910 is connected to the first port 211.

[0052] In the above situation, the driving device 300 rotates by driving the rotating shaft 410, thereby causing the rotating shaft 410 to drive the support tray 420 to rotate. The first port 211 is opened on the hole wall of the mounting hole. Since the first port 211 is connected to the second assembly gap 930, the protective gas blown out of the first port 211 can be blown into the second assembly gap 930, thereby preventing the driving device 300 from coming into contact with corrosive gases. At the same time, since the air outlet gap 910 is connected to the first port 211, the protective gas blown out of the first port 211 can be blown into the air outlet gap 910, thereby preventing the corrosive gas in the process chamber 700 from continuing to diffuse toward the driving device 300. That is, the protective gas in the air outlet gap 910 has an intercepting effect on the corrosive gas that tends to diffuse into the second assembly gap 930, thereby protecting the driving device 300.

[0053] Optionally, the second assembly gap 930 can be connected to the air outlet gap 910 formed between the support tray 420 and the process door 200, so that after the protective gas enters the air inlet channel 210, the protective gas is blown out from the first port 211. The protective gas can be blown into the second assembly gap 930 first, and then blown from the second assembly gap 930 into the air outlet gap 910, which means that the protective gas has a clear gas path from the protective gas pipeline 500 to the process chamber 700, which is conducive to achieving a more stable protective effect of the protective gas on the drive device 300.

[0054] At the same time, because the second assembly gap 930 and the air outlet gap 910 can be made smaller during the design and assembly process, when a certain air outlet volume is maintained at the first port 211, it is advantageous for the shielding gas to form a gas seal with the drive device 300 through the second assembly gap 930 and the air outlet gap 910, thereby enhancing the shielding effect of the shielding gas on the drive device 300. In addition, the communication between the first port 211 and the second assembly gap 930 can facilitate the shielding gas to form a gas isolation at a closer location, thereby improving the protective effect.

[0055] The specific types of semiconductor process equipment disclosed in the embodiments of the present application are diverse. Optionally, the semiconductor process equipment disclosed in the embodiments of the present application may be a vertical furnace. Of course, the semiconductor process equipment disclosed in the embodiments of the present application may also be other specific types of equipment. The semiconductor process equipment may also include a fixed frame 1000, and the cavity 100 is fixed on the fixed frame 1000, so that the fixed frame 1000 can fix and support the cavity 100 to ensure the stability of the cavity 100 during operation.

[0056] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0057] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A semiconductor process equipment, characterized in that: It comprises a cavity (100), a process door (200), a driving device (300), a wafer boat support portion (400), a protective gas pipeline (500) and a first heating device (610); The process door (200) is connected to the opening (111) of the cavity (100), and the process door (200) is used to cover the opening (111) and enclose a process chamber (700) with the cavity (100); The driving device (300) is provided on the process door (200) and is connected to the wafer boat support portion (400) placed in the process chamber (700), and is used to drive the wafer boat support portion (400) to rotate; The process door (200) is provided with an air inlet channel (210), the protective gas pipeline (500) is provided on the cavity (100), and the first port (211) of the air inlet channel (210) is adjacent to the driving device (300) for conveying protective gas for isolating process gas from the driving device (300); In a state where the process door (200) and the cavity (100) enclose the process chamber (700), the second port (212) of the air inlet channel (210) is connected to the protective gas pipeline (500); The first heating device (610) is connected to a portion of the protective gas pipeline (500) exposed outside the cavity (100) and is used to heat the protective gas pipeline (500).

2. The semiconductor process equipment according to claim 1, wherein: The cavity (100) comprises a cavity body (110) and a flange (120), wherein the cavity body (110) is provided with the opening (111), the flange (120) is connected to the cavity body (110) and is arranged around the opening (111), and the flange (120) protrudes in a direction away from the central axis of the opening (111), wherein: The protective gas pipeline (500) is provided on the flange (120) and passes through the flange (120) to connect with the second port (212); or, The flange (120) is provided with a connecting channel (121), and the protective gas pipeline (500) is connected to the flange (120) and docked with the second port (212) through the connecting channel (121).

3. The semiconductor process equipment according to claim 2, wherein: The end face of the cavity body (110) where the opening (111) is located is coplanar with the surface of the flange (120) located on the same side, and forms a cavity sealing surface (130). A sealing component (800) is provided between the cavity sealing surface (130) and the corresponding surface of the process door (200), and the process door (200) is sealed with the cavity sealing surface (130) through the sealing component (800).

4. The semiconductor process equipment according to claim 3, wherein: The sealing assembly (800) includes a first sealing ring (810) and a second sealing ring (820), wherein the second sealing ring (820) is arranged around the first sealing ring (810), and the second port (212) is located between the first sealing ring (810) and the second sealing ring (820), and the first sealing ring (810) and the second sealing ring (820) are both sealed between the process door (200) and the cavity sealing surface (130).

5. The semiconductor process equipment according to claim 4, wherein: The air inlet channel (210) includes an air inlet channel body (214) and an annular groove (213); a first channel body port of the air inlet channel body (214) is opened on the bottom wall of the annular groove (213); a second channel body port of the air inlet channel body (214) is the first port (211); a notch of the annular groove (213) is the second port (212); the process door (200), the cavity (100), the first sealing ring (810) and the second sealing ring (820) form a first assembly gap (920); the first assembly gap (920) is arranged around the first sealing ring (810); the annular groove (213) is opposite to and connected to the first assembly gap (920).

6. The semiconductor process equipment according to claim 5, wherein: There are multiple air intake channel bodies (214), the first channel body port of each air intake channel body (214) is opened on the bottom wall of the annular sink groove (213), and the second channel body port of each air intake channel body (214) is the first port (211).

7. The semiconductor process equipment according to claim 5, wherein: The projection of the connecting channel (121) in the direction along the central axis thereof is located within the annular recessed groove (213); the connecting channel (121) is connected to the annular recessed groove (213) through the first assembly gap (920); a first dimension of the connecting channel (121) is smaller than the width of the notch of the annular recessed groove (213); the first dimension is the dimension of the connecting channel (121) in the width direction of the notch.

8. The semiconductor process equipment according to claim 1, wherein: The semiconductor process equipment further includes a second heating device (620), which is arranged on the outer surface of the process door (200) facing away from the process chamber (700), and the second heating device (620) is used to heat the protective gas flowing through the air inlet channel (210).

9. The semiconductor process equipment according to claim 1, wherein: The crystal boat support portion (400) includes a rotating shaft (410) and a support tray (420), the rotating shaft (410) is connected to the support tray (420), the driving device (300) is connected to the rotating shaft (410), the process door (200) is provided with a mounting hole, the driving device (300) is installed in the mounting hole, the first port (211) is provided on the hole wall of the mounting hole, a second assembly gap (930) is provided between the driving device (300) and the hole wall, the first port (211) is communicated with the second assembly gap (930), an air outlet gap (910) is formed between the rotating shaft (410) and the process door (200), and the air outlet gap (910) is communicated with the first port (211).

10. The semiconductor process equipment according to any one of claims 1 to 9, characterized in that: The semiconductor process equipment is a vertical furnace, and the semiconductor process equipment further comprises a fixed frame (1000), and the cavity (100) is fixed on the fixed frame (1000).

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