Magnetoresistive random access memory

By employing a symmetrical character line design and eliminating the isolation structure in the MRAM cell, the problems of large chip area, high cost, high power consumption, and insufficient sensitivity in the existing technology are solved, realizing more efficient, lower power consumption, and higher sensitivity magnetoresistive effect applications.

CN115132776BActive Publication Date: 2026-07-10UNITED MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNITED MICROELECTRONICS CORP
Filing Date
2018-09-07
Publication Date
2026-07-10

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Abstract

A magnetoresistive random access memory mainly includes a first metal-oxide semiconductor (MOS) transistor and a second MOS transistor disposed on a substrate, a magnetic tunneling junction (MTJ) disposed between the first MOS transistor and the second MOS transistor, a first interlayer dielectric layer disposed on one side of the MTJ and on the first MOS transistor, and a second interlayer dielectric layer disposed on the other side of the MTJ and on the second MOS transistor.
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Citation Information

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