Metal substrate structure for semiconductor power module and method for manufacturing the metal substrate structure and semiconductor power module

Abstract

A method for manufacturing a metal substrate structure (10) for a semiconductor power module (1), comprising providing at least one terminal (15), providing a metal top layer (11), providing a dielectric layer (12), and providing a metal bottom layer (13). The method also comprises connecting at least one terminal (15) to the metal top layer (11) by welding, and connecting the metal top layer (11) to the dielectric layer (12) and the metal bottom layer (13), so that the dielectric layer (12) is connected to and between the metal top layer (11) and the metal bottom layer (13). Connecting at least one terminal (15) to the metal top layer (11) is completed before connecting the metal top layer (11) to the dielectric layer (12) and the metal bottom layer (13).

Description

Technical Field

[0001] The present disclosure relates to a metal substrate structure for a semiconductor power module and a semiconductor power module for a semiconductor device. The present disclosure also relates to a corresponding manufacturing method for the metal substrate structure. Background Art

[0002] Conventional insulated metal substrates form a low-power and medium-power semiconductor packaging technology with both low insulation requirements and low thermal resistance requirements. Terminals are prepared on the insulated metal substrate. Summary of the invention

[0003] Embodiments of the present disclosure may provide a cost-saving metal substrate structure for a semiconductor power module that achieves reliable functionality even for high voltage power module applications. Other embodiments of the present invention may provide a corresponding semiconductor power module for a semiconductor device and a method for manufacturing such a metal substrate structure.

[0004] According to an embodiment, a method for manufacturing a metal substrate structure for a semiconductor power module includes providing at least one terminal, providing a metal top layer, providing a dielectric layer, and providing a metal bottom layer. The method also includes connecting at least one terminal to the metal top layer by welding, such as by ultrasonic welding and / or laser welding. Other welding processes are also possible. The method also includes connecting the metal top layer to the dielectric layer and the metal bottom layer, so that the dielectric layer is connected to both the metal top layer and the metal bottom layer and is between the two, wherein connecting at least one terminal to the metal top layer is completed before connecting the metal top layer to the dielectric layer and the metal bottom layer.

[0005] Due to the described manufacturing method, it is possible to realize a welding connection on an insulating metal substrate, which can contribute to a stable and reliable function of a semiconductor power module, even for high voltage power module applications. The welding connection of the terminal to the metal top layer is completed, and then the metal top layer is connected to the dielectric layer and / or the metal bottom layer. In other words, the connection of the metal top layer to the dielectric layer and / or the metal bottom layer is performed after the connection of the terminal to the metal top layer by welding. Therefore, the mechanical stress caused by welding is away from the dielectric layer and helps to avoid cracks or other damage to the dielectric layer.

[0006] The understanding related to the present disclosure is that the conventional insulated metal substrate realizes low-power and medium-power semiconductor packaging technology with low insulation requirements and low thermal resistance requirements at the same time. For low reliability requirements, the terminal can be, for example, welded on the substrate. Generally, welding provides better reliability, but the welding process may be important for the substrate structure. In view of the conventional setting of such an insulated metal substrate, the corresponding terminal is connected to the top metallization using a welding technique to provide a typical connection connection, which may be important for the stable process on the substrate and the resin insulating sheet below the metallization. The welding process, especially ultrasonic welding, may cause damage to the substrate structure, providing a strong impact of thermal stress and mechanical stress combined with heat on the substrate structure due to the friction and pressure between the terminal pin and the substrate. Here, the resin sheet is strongly endangered by deformation and crack formation. When ultrasonic welding of the terminal pin is applied to the circuit metallization of the insulated metal substrate, the corresponding failure mode must be considered. However, if an alternative welding method is used on such an insulated metal substrate, there is also a high risk of substrate damage. Therefore, for example, when the terminal pin is connected to the substrate by laser welding, a strong thermal shock must also be considered.

[0007] Due to conventional manufacturing of such metal substrate structures, such as using ultrasonic welding, severe damage may be generated in the insulating sheet of the insulating layer during the welding process. After ultrasonic welding of the main terminals and / or auxiliary terminals on the circuit metallization of the top layer, complete delamination may occur between the top layer and the insulating layer. The deformed resin sheet or insulating material may further adhere to the delaminated metal sheet at the terminal location, resulting in shell-like cracks also forming in the insulating sheet of the insulated metal substrate.

[0008] By using the described method for manufacturing a metal substrate structure, the above-mentioned adverse effects can be offset due to a separate welding process that is completed before and separated from the connection of the metal top layer and the dielectric layer. Therefore, the risk of crack or damage formation can be completely suppressed, and a stable semiconductor power module is feasible, which can achieve reliable function even for high voltage power module applications in a voltage range of, for example, 0.5 kV up to 10.0 kV. For example, one or more terminals can be directly soldered to the surface of the metal top layer to form a direct copper-to-copper contact. Alternatively, solder or other materials such as glue, paint and / or varnish layers can be located between the bottom surface of the terminal facing each other and the upper surface of the metal top layer.

[0009] According to an embodiment of the method, the step of coupling the metal top layer with the dielectric layer and the metal bottom layer comprises aligning the metal top layer, the dielectric layer and the metal bottom layer relative to each other. The method further comprises stacking the metal top layer, the dielectric layer and the metal bottom layer.

[0010] Alternatively, the step of coupling the metal top layer to the dielectric layer and the metal bottom layer includes: providing a molding substance; aligning the metal top layer and the metal bottom layer relative to each other with a predetermined distance therebetween; and then introducing the provided molding substance between the aligned metal top layer and the metal bottom layer, thereby forming the dielectric layer by molding. For example, forming the dielectric layer by molding can be accomplished by injection molding, compression molding, and / or transfer molding.

[0011] Thus, the dielectric layer may implement a prepreg sheet assembled between two metal plates forming a metal top layer and a metal bottom layer at the top and bottom. Such a metallized sheet or plate is bonded to the insulator of the dielectric layer by a lamination process, for example. The desired metallization structure of the metal top layer may then be completed by subsequent steps of a mask and etching process to locally remove the conductive metal, thereby producing the final metallization structure.

[0012] For the molded dielectric layer, the molding substance realizes a pumpable substance with predetermined material properties. The pumpable substance is a liquid or viscous raw material of the dielectric layer to be formed. For example, the molding substance is an epoxy resin and / or a ceramic-based liquid. Alternatively or additionally, the raw material of the dielectric layer can be a thermosetting or thermoplastic resin material, such as polyamide, PBT, PET. Alternatively or additionally, the raw material of the dielectric layer can include an inorganic filler to obtain improved thermal conductivity and / or CTE adjustment relative to the metal top layer and / or the metal bottom layer. For example, the molded dielectric layer includes a resin-based dielectric material with a ceramic filler material, such as epoxy resin, Al2O3, AlN, BN, Si3N4 or SiO2. For example, the dielectric layer is an epoxy resin with a filler. The dielectric layer can also be based on other materials suitable for transfer molding, injection molding or compression molding, such as bismaleimide, cyanate ester, polyimide and / or silicone. Alternatively or additionally, the dielectric layer may include a ceramic material and / or a wet-set material or a material combination of two or more of the above components.

[0013] The alignment of the metal top layer and the metal bottom layer relative to each other with a predetermined distance therebetween will substantially predetermine the subsequent thickness of the molded dielectric layer. For example, the alignment can be achieved by placing the metal top layer onto a release film or liner or another fixture, such as a mold slot of a molding tool. This enables the metallization structure of the provided metal top layer to be accurately positioned relative to the metal bottom layer and may be useful, for example, if the metal top layer comprises separate metal pads due to different operating potentials. In the case of a stack, the thickness of the resin layer is given by the thickness and behavior of the stack layers.

[0014] According to another embodiment of the manufacturing method, the metal top layer may be provided with at least one recess by stamping. In the case of a stamped metal top layer, coupling the at least one terminal to the metal top layer by welding may be done before or after stamping the metal top layer.

[0015] Alternatively or additionally, the metal top layer may be provided with at least one recess, for example by etching and / or cutting.Alternatively or additionally, the metal top layer may be formed with a predetermined structure, for example by laser cutting a provided metal sheet.

[0016] The metallization of the metal top layer can be formed by a film and / or sheet including copper and / or aluminum and / or an alloy of copper and / or aluminum. This can also be applied to the metal bottom layer, which can be formed as a copper and / or aluminum plate, for example. At least one recess can realize a through opening through a coherent metal sheet that forms the metallization of the metal top layer. Alternatively, for example, at least one recess forms a groove or free volume between two separate metal paths. The metal top layer can also include a plurality of recesses and / or grooves to form a predetermined metal pattern to prepare the desired metallization on the top of the metal substrate structure. This can also imply that there are multiple separate metal patterns on the top surface of the metal substrate structure.

[0017] The method of manufacturing a metal substrate structure may further include cleaning and / or leveling the coupled terminals, the metal top layer, the dielectric layer, and / or the metal bottom layer.

[0018] Furthermore, according to another embodiment, an electronic device is provided and coupled with at least one terminal to form, for example, a semiconductor power module.

[0019] According to an embodiment, a metal substrate structure for a semiconductor power module includes a metal top layer having at least one recess and at least one terminal connected to the metal top layer by welding. The metal substrate structure also includes a metal bottom layer and a dielectric layer, which is connected to both the metal top layer and the metal bottom layer and is formed between the metal top layer and the metal bottom layer by molding. For example, the metal top layer including at least one recess is formed by stamping, and wherein the dielectric layer is molded so that the dielectric layer extends into at least one recess. In addition, the dielectric layer can be molded so that the dielectric layer forms a groove or groove groove in at least one recess. Alternatively, the dielectric layer is molded so that the dielectric layer forms a raised portion or barrier portion, which extends through at least one recess and protrudes above the outer surface of the metal top layer.

[0020] According to an embodiment, a semiconductor power module for a semiconductor device includes an embodiment of the described metal substrate structure and an electronic device connected to at least one terminal of the metal substrate structure. The semiconductor power module may also include a heat sink connected to the metal bottom layer of the metal substrate structure to dissipate heat during operation of the semiconductor power module. Therefore, the semiconductor power module may include a separate heat sink. Alternatively or additionally, the metal bottom layer of the metal substrate structure itself can be used as a heat sink and can be configured to include ribs or protrusions, for example to provide beneficial heat dissipation. The metal bottom layer can also be used as a substrate for the semiconductor power module. The semiconductor power module including the metal substrate structure can also be partially or completely encapsulated by a resin or dielectric gel prepared by molding or potting. The terminal can be used as a power terminal or an auxiliary terminal, for example for signal wiring.

[0021] Furthermore, the semiconductor power module may include two or more embodiments of the above-mentioned metal substrate structure.The electronic device may include a chip, an integrated circuit and / or other devices.

[0022] Since the described method is capable of manufacturing the above-mentioned embodiments of the metal substrate structure and the semiconductor power module, the described features and characteristics of the method for manufacturing the metal substrate structure and the semiconductor power module are also disclosed, and vice versa. Therefore, the present disclosure includes several aspects, wherein each feature described with respect to one of the aspects is also disclosed herein with respect to another aspect, even if the corresponding feature is not explicitly mentioned in the context of a particular aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] An exemplary embodiment is explained below with the aid of schematic diagrams and reference numerals. The drawings show:

[0024] Figure 1 An embodiment of a semiconductor power module is shown;

[0025] Figures 2 to 3 An embodiment of a metal substrate structure for a semiconductor power module is shown;

[0026] Figures 4 to 7 The steps of manufacturing an embodiment of a metal substrate structure for a semiconductor power module are shown;

[0027] Figures 8 to 9 The steps of another embodiment of manufacturing a metal substrate structure for a semiconductor power module are shown; and

[0028] Fig.10 A flow chart of a method of manufacturing an embodiment of a metal substrate structure is shown. DETAILED DESCRIPTION

[0029] The accompanying drawings provide further understanding. It should be understood that the embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale. The same reference numerals represent elements or components having the same function. As long as the functions of elements or components in different drawings correspond to each other, their description will not be repeated for subsequent drawings. For clarity, elements may not be presented with corresponding reference symbols in all drawings.

[0030] Figure 1 The figure shows a side view of an embodiment of a semiconductor power module 1 for a semiconductor device. The semiconductor power module 1 includes a metal substrate structure 10, an electronic device 2 coupled to the metal substrate structure 10, and a heat sink 3 also coupled to the metal substrate structure 10. For example, the electronic device 2 may include a chip, Figure 1 A semiconductor power module 1 having a chip on a metal substrate structure 10 is shown. With respect to the stacking direction A shown, the electronic device 2 is coupled to a metal top layer 11 of the metal substrate structure 10, and the heat sink 3 is coupled to a metal bottom layer 13 of the metal substrate structure. The metal substrate structure 10 further includes a dielectric layer 12 formed between the metal top layer 11 and the metal bottom layer 13.

[0031] For example, the metal top layer 11 and the metal bottom layer 13 are both composed of metal or at least include metals such as copper and / or aluminum. Thermally conductive and / or electrically conductive materials or material combinations may be used alternatively. For example, the dielectric layer 12 is a prepreg sheet or a molded epoxy resin with a filler. The filler may be ceramic-like or implemented by other inorganic fillers such as glass fiber. Alternatively or additionally, the dielectric layer 12 may include a thermoplastic or thermosetting resin such as polyamide, PBT and / or PET. Alternatively or additionally, the dielectric layer 12 includes a ceramic-based insulating layer such as Al2O3, AlN, BN, Si3N4, SiO2. The dielectric layer 12 may also be based on other materials suitable for injection molding, transfer molding and / or compression molding, such as bismaleimide, cyanate ester, polyimide and silicone, or may even be based on ceramic materials such as hydroset materials. Thus, the metal substrate structure 10 realizes an insulated metal substrate having a structured top side metallization, a metal back side plate and a dielectric insulation layer therebetween. The pads of the metal top layer 11 are connected to components of the electronic device 2 via leads 4 and / or via terminals 15, which are connected to the metal top layer 11 by welding.

[0032] The semiconductor power module 1 shown may implement a gel-filled power module, wherein the electronic device 2 or even the entire top side or even more metal substrate structures 10 may be embedded in or covered by epoxy and / or gel encapsulation. For example, such encapsulation may be accomplished by molding after manufacturing the metal substrate structure 10. Options for preparing the semiconductor power module 1 may include gel filling, N-epoxy filling (such as filling resin), transfer molding and / or other molding methods.

[0033] Figures 2 to 3 Two different embodiments of the metal substrate structure 10 are shown in schematic side views. Figure 2 The diagram shows a metal substrate structure 10 comprising a metal top layer 11, which comprises two through-going recesses 14, which are filled in a predetermined manner with the material of a dielectric layer 12, for example formed by molding. Thus, the dielectric layer 12 is molded such that the dielectric layer extends into the recesses 14 and covers the cover edges of the metal top layer 11, which respectively limit the recesses 14.

[0034] according to Figure 3 In the illustrated embodiment, the dielectric layer 12 can be molded so that a dielectric trench 17 is formed in one recess 14 and a dielectric barrier 18 is formed in another recess 14. The barrier 16 extends through the corresponding recess 14 and protrudes above the outer surface 111 of the metal top layer 11. The protruding portion of the barrier 16 can be called a rib. The trench 15 and the barrier 16 are integrally formed with the dielectric layer 12, for example, in a one-time molding process, and their limiting dielectric materials can cover the edges of the corresponding recess 14 of the metal top layer 11.

[0035] For example, one or more terminals 15 may be directly soldered to the metallization of the metal top layer 11 to form a direct conductive contact. Thus, the corresponding contact surface 16 of the terminal 15 directly contacts the outer surface 111 of the metal top layer 11. Alternatively, solder or other materials such as glue, paint and / or varnish layers may be located between the contact surfaces 16 of the terminals 15 and the outer surface 111 of the metal top layer 11 facing each other. In this regard, soldering, sintering and / or gluing may be implemented during the manufacturing process.

[0036] The terminal 15 is connected to the metal top layer 11 by welding, for example, by ultrasonic welding and / or laser welding. Other welding processes are also possible. The connection of the terminal 15 to the metal top layer 11 is completed before the connection of the metal top layer 11 to the dielectric layer 12 and / or the metal bottom layer 13.

[0037] For example, Figures 4 to 6 The diagram shows the Figure 3 The steps of the corresponding manufacturing method can be as follows: Fig.10Proceed as shown in the flowchart.

[0038] In step S1, a raw sheet 19 is provided to form the subsequent metal top layer 11 (see Figure 4 In addition, three terminals 15 are provided, each of which has an L-shape with respect to a cross section spanned by the stacking direction A and the lateral direction B. Of course, terminals 15 of different shapes are also possible.

[0039] In step S2, the terminal 15 is welded to the outer surface 111 of the metal top layer 11 (see Figure 4 For example, welding can be performed according to ultrasonic welding and / or laser welding.

[0040] In step S3, for example, the original sheet 19 is punched using a punching tool having a protrusion to form the recess 14 and the metal top layer 11 having a predetermined metallization structure (see FIG. Figure 5 Alternatively, separate metal pads may be pre-punched out before soldering the terminal 15 to the metal top layer 11 (see Figure 7 ). Other separation methods, such as etching, cutting or laser cutting are also possible.

[0041] In step S4, a metal bottom layer 13 and a pumpable molding substance having predetermined material properties may be provided, the pumpable molding substance realizing a liquid or viscous raw material to form a subsequent dielectric layer 12. In addition, in step S4, the stamped metal top layer 11 having the solder terminals 15 thereon and the provided metal bottom layer 13 are aligned relative to each other with a predetermined distance therebetween (see Figure 5 This can be accomplished by using a release film for fixing, for example, wherein the metallized structure of the provided metal top layer 11 is assembled onto a molding tool. Afterwards, such a metal top layer release film unit can be positioned relative to the provided metal bottom layer 13, for example, wherein the metal top layer 11 faces the metal bottom layer 13.

[0042] In step S5, the provided molding substance is introduced into the free volume between the aligned metal top layer 11 and the metal bottom layer 13, thereby performing molding of the dielectric layer 12. The formation of the dielectric layer 12 can be accomplished by injection molding, transfer molding and / or compression molding, and can include the formation of one or more grooves 17 and / or barriers 18 extending in and / or through the corresponding recesses 14. For example, this is accomplished by providing corresponding cavities that are confined by a molding tool and the metal top layer 11 in the region of the recess 14. The provided substance is then introduced into these cavities to form groove grooves, grooves 17, barriers 18 and / or ribs. For example, in order to prepare the grooves, the molding tool has corresponding protrusions.

[0043] Thus, an embodiment of a metal substrate structure 10 for a semiconductor power module 1 may be manufactured consisting of a stamped metal sheet top side realizing a metal top layer 11, an epoxy-based molded insulator realizing a dielectric layer 12, and a metal sheet bottom side realizing a metal bottom layer 13. Alternatively, the uniform top metallization may be etched after molding.

[0044] Figure 7 An alternative step of providing the metal top layer 11 with a predetermined through recess 14 is shown. The metal top layer 11 can even be provided by stamping before the terminal 15 is soldered to the metal top layer 11 (see Figure 7 After soldering the terminal 15 to the metal top layer 11, the manufacturing method may continue as follows. Figure 5 and 6 shown.

[0045] Figure 8 and 9 A manufacturing state of a different method is shown for manufacturing another embodiment of the metal substrate structure 10. According to such an embodiment, the metal substrate structure 10 may be formed by lamination, masking, and etching.

[0046] In step S1, a raw sheet 19 is provided to form the metal top layer 11 at the rear, and the terminal 15 is welded to the outer surface 111 (see Figure 8 In addition, for example, a dielectric layer 12 is provided in the form of a prepreg material sheet. In addition, a metal bottom layer 13 is provided, and the metal top layer 11, the dielectric layer 12 and the metal bottom layer 13 are aligned relative to each other.

[0047] In step S2, lamination is performed to connect the above layers 11, 12 and 13 together (see Figure 8 the lower part of the ).

[0048] In step S3, due to masking and etching, a recess 14 is formed in the metal top layer 11 (see Fig. 9 ). In addition, the metal substrate structure 10 may be cleaned and / or leveled.

[0049] According to the described embodiment, the terminals 15 are attached to the metal top layer 11 before the connection of the layers 11, 12, 13 of the metal substrate structure 10 is completed. Here, the manufacture of the metal substrate structure can implement a process within the manufacture of the semiconductor power module 1. Compared to the traditional manufacturing process for insulating metal substrates and the subsequent module assembly process, the main terminals and auxiliary terminals 15 are welded to the bare copper top side metal plate that implements the metal top layer 11 before the remaining metal substrate structure 10 itself is manufactured. Therefore, the insulating resin sheet that implements the dielectric layer 12 is not present and is not subjected to mechanical and thermal stresses during the welding process. The welding can be completed by ultrasonic welding, laser welding or any other type of applicable welding process.

[0050] According to the process flow for the metal substrate structure 10 of the described possible arrangement type, the welding process for connecting the terminal 15 is completed before the lamination or molding of the insulating material of the dielectric layer 12, respectively. With regard to the manufacture of the metal substrate structure 10 by the lamination process, the homogeneous copper top side plate 15 with the welding terminal, the pre-impregnated dielectric layer 12 and the bottom plate are connected together. The circuit pattern is prepared by etching after the lamination process. Alternatively or additionally, the cutting separation of the pattern can be completed before lamination.

[0051] For manufacturing the metal substrate structure 10 by the molding process of the isolation material of the dielectric layer 12, the pattern of the circuit metallization can be prepared by stamping, etching and / or cutting before performing the injection molding, transfer molding or compression molding process. Alternatively or additionally, the cutting separation of the pattern can be completed before lamination. However, other process steps can also be integrated into the manufacturing method, such as a cleaning process or a leveling process for the top plate that is deformed after the welding process before assembling the complete insulated metal substrate structure 10.

[0052] The terminal 15 can be made of copper or copper alloy and can realize an auxiliary terminal or a main terminal. The thickness of the terminal 15 can have a value of 0.2mm to 3.0mm relative to the lateral direction B and / or the stacking direction A. This can be applied to the upright body portion and / or the horizontal foot portion of the L-shaped terminal 15. The horizontal section and the vertical section can have the same or different thickness.

[0053] Due to the selection of the manufacturing method described, the relatively soft resin dielectric layer 12 can be prevented from being deformed due to thermal and mechanical shocks, even when ultrasonic welding is performed on the circuit metallization of the metal top layer 11. This further helps to avoid at least local delamination between the resin sheet and the metal part and / or crack formation inside the isolation sheet of the dielectric layer. Delamination or crack formation may also lead to partial discharge and dielectric breakdown in the high voltage power module. Therefore, there is no visible deformation of the resin sheet of the dielectric layer 12 or modification of the resin caused by mechanical and / or thermal shocks under the welded terminal feet.

[0054] Therefore, the corresponding design of the semiconductor power module 1 may include one or more of the following advantages: The proposed process flow avoids the problem of mechanically and thermally sensitive resin insulation sheets that may damage the dielectric layer 12 during the welding process. Considering that novel joining methods such as welding techniques (e.g. ultrasonic welding, laser welding) are also used, this opportunity makes the use of such a substrate design with considerable cost-effectiveness attractive for large power modules and suitable for higher voltage levels. Therefore, when replacing a conventional substrate arrangement with a ceramic insulation sheet welded to a substrate with an insulated metal substrate structure 10 according to the present disclosure, a significant cost reduction is possible. On the one hand, material costs can be reduced, and on the other hand, several process steps can be removed from the corresponding process flow, such as the joining process between the metal substrate structure 10 and the substrate or cooler in the semiconductor power module 1.

[0055] By using the described method for manufacturing a metal substrate structure, the formation of cracks or damage can be counteracted due to a separate soldering process in which the terminal 15 is soldered to the circuit metallization of the metal top layer 11 before and separately from the preparation of the insulated metal substrate structure 10 including the connection of the metal top layer 11 and the dielectric layer 12. Therefore, the risk of crack or damage formation is significantly reduced or even completely suppressed, and a stable semiconductor power module 1 is feasible, which can achieve reliable function even for high voltage power module applications in a voltage range of, for example, 0.5 kV up to 10.0 kV.

[0056] Said Figures 1 to 10 The illustrated embodiments represent exemplary embodiments of the improved metal substrate structure 10, semiconductor power module 1, and method of manufacturing the same; therefore, they do not constitute a complete list of all embodiments. For example, the actual arrangement and method may differ from the illustrated embodiments in terms of the metal substrate structure and power module.

[0057] Reference numerals list

[0058] 1 Semiconductor power module

[0059] 2 Electronic devices

[0060] 3 Radiator

[0061] 4 Leads

[0062] 10 Metal substrate structure

[0063] 11 Metal top layer

[0064] 111 External surface

[0065] 12 Dielectric layer

[0066] 13 Metal base

[0067] 14 recess

[0068] 15 terminals

[0069] 16 Contact surface

[0070] 17 Forming groove

[0071] 18 Molding barrier

[0072] 19 Original Sheet

[0073] A Stacking direction

[0074] B Lateral direction

[0075] S(i) Method steps for manufacturing a metal substrate structure for a semiconductor power module.

Claims

1. A method for manufacturing a metal substrate structure (10) for a semiconductor power module (1), the method comprising: - providing at least one terminal (15), - providing a metal top layer (11), - providing a dielectric layer (12), - providing a metallic base layer (13), - connecting the at least one terminal (15) to the metal top layer (11) by welding, and - coupling the metal top layer (11) to the dielectric layer (12) and to the metal bottom layer (13), such that the dielectric layer (12) is coupled to and interposed between both the metal top layer (11) and the metal bottom layer (13), Wherein, connecting the at least one terminal (15) to the metal top layer (11) is completed before connecting the metal top layer (11) to the dielectric layer (12) and to the metal bottom layer (13).

2. The method according to claim 1, wherein: The step of connecting the metal top layer (11) to the dielectric layer (12) and to the metal bottom layer (13) comprises: - aligning the metal top layer (11), the dielectric layer (12) and the metal bottom layer (13) relative to each other, and - stacking the metal top layer (11), the dielectric layer (12) and the metal bottom layer (13).

3. The method according to claim 1, wherein: The step of connecting the metal top layer (11) to the dielectric layer (12) and to the metal bottom layer (13) comprises: - provide a shaping substance, - aligning the metal top layer (11) and the metal bottom layer (13) relative to each other with a predetermined distance between them, and - introducing the provided molding substance between the aligned metal top layer (11) and metal bottom layer (13), thereby forming the dielectric layer (12) by molding.

4. The method according to claim 3, wherein: The dielectric layer (12) is formed by injection molding, compression molding and / or transfer molding.

5. The method according to any one of claims 1 to 4, wherein: The step of providing the metal top layer (11) comprises: A metal top layer (11) having at least one recess (14) is formed by masking and etching.

6. The method according to any one of claims 1 to 4, wherein: The step of providing the metal top layer (11) comprises: A metal top layer (11) having at least one recess (14) is formed by punching and / or cutting.

7. The method according to claim 6, wherein: The connection of the at least one terminal (15) to the metal top layer (11) by welding is completed before or after the metal top layer (11) is stamped.

8. The method according to any one of claims 1 to 4, wherein: The connection of the at least one terminal (15) to the metal top layer (11) by welding is accomplished by ultrasonic welding and / or laser welding.

9. The method according to any one of claims 1 to 4, further comprising: The at least one connected terminal (15), the metal top layer (11), the dielectric layer (12) and / or the metal bottom layer (13) are cleaned and / or leveled.

10. The method according to any one of claims 1 to 4, further comprising: - providing an electronic device (2), and - Connecting the electronic device (2) to the metal top layer (11).

11. A metal substrate structure (10) for a semiconductor power module, the metal substrate structure being manufactured according to the method of any one of the preceding claims, the metal substrate structure comprising: - a metal top layer (11) having at least one recess (14), - at least one terminal (15) connected to the metal top layer (11) by welding, - a metallic base layer (13), and - a dielectric layer (12), the dielectric layer being connected to both the metal top layer (11) and the metal bottom layer (13), and the dielectric layer being formed between the metal top layer (11) and the metal bottom layer (13) by molding, in, The dielectric layer (12) is shaped so that it extends into the at least one recess (14), and wherein: The at least one terminal (15) comprises an L-shaped terminal having a body portion and a foot portion spanning the body portion.

12. The metal substrate structure (10) according to claim 11, wherein: The metal top layer (11) comprising at least one recess (14) is formed by punching, etching and / or cutting, and wherein the dielectric layer (12) is shaped such that the dielectric layer extends into the at least one recess (14).

13. The metal substrate structure (10) according to claim 12, wherein: The dielectric layer (12) is shaped so that the dielectric layer forms at least one groove (17) in at least one recess (14) of the metal top layer (11).

14. The metal substrate structure (10) according to claim 12 or 13, wherein: The dielectric layer (12) is shaped so that the dielectric layer forms at least one barrier portion (18) extending through the at least one recess (14) and protruding above the outer surface (111) of the metal top layer (11).

15. A semiconductor power module (1) for a semiconductor device, the semiconductor power module comprising: - A metal substrate structure (10) according to any one of claims 11 to 14, and - An electronic device (2) coupled to the metal top layer (11) of the metal substrate structure (10).

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