magnetic sensor

Abstract

The magnetic sensor according to the application has a magnetoresistive element with a multilayer structure and a magnetic sensitive axis, and at least one soft magnetic body is arranged in the vicinity of the magnetoresistive element. The soft magnetic body has, viewed in the layering direction of the magnetoresistive element, at least at its corner a slanted line which is slanted with respect to the two sides of the soft magnetic body which extend to the corner.

Description

[0001] This application is a continuation of and claims priority to Japanese Application No. 2017-250476, filed December 27, 2017, the disclosure of which is incorporated by reference herein in its entirety. December 27, 2018 201811610981.6 Magnetic sensor Figure 1A TECHNICAL FIELD

[0002] This application is based on Japanese Application No. 2017-250476 filed December 27, 2017, the disclosure of which is incorporated by reference herein in its entirety.

[0003] The present invention relates to a magnetic sensor. BACKGROUND

[0004] As a sensor for detecting the position of a moving object, a magnetic sensor having an element with a magnetoresistance effect is known (see JPH 11-87804). The magnetic sensor is moved relative to a magnet, and thereby detects a change in an external magnetic field generated by the magnet, and calculates a moving distance of the moving object based on the detected change in the external magnetic field.

[0005] The magnetic sensor disclosed in JPH 11-87804 has a giant magnetoresistance film with a magnetoresistance effect and a pair of soft magnetic films, as disclosed in FIG. 1. The giant magnetoresistance film of the magnetic sensor is elongated, and the soft magnetic films are disposed on both sides of the giant magnetoresistance film with respect to the long axis thereof. Each soft magnetic film is rectangular as viewed in the film thickness direction of the giant magnetoresistance film. In other words, each corner of each soft magnetic film has an edge (a tip) as viewed in the film thickness direction of the giant magnetoresistance film. In the magnetic sensor, the giant magnetoresistance film having a poor sensitivity to a magnetic field is combined with the soft magnetic films so as to enhance the sensitivity to the magnetic field. SUMMARY

[0006] In the magnetic sensor disclosed in JPH 11-87804, in which the soft magnetic films are disposed on both sides of the giant magnetoresistance film, a magnetic field toward a direction other than the direction of the magnetic sensitive axis of the giant magnetoresistance film is shielded to some extent. However, a magnetic sensor that improves the shielding performance of a magnetic field toward a direction other than the direction of the magnetic sensitive axis is desired.

[0007] An object of the present invention is to provide a magnetic sensor having a soft magnet that effectively shields a magnetic field toward a direction other than the direction of a magnetic sensitive axis when the magnet is used as a shield, and that has a small hysteresis when the magnet is used as a magnetic yoke.

[0008] ​​​A magnetic sensor according to the present application includes a magnetoresistive element having a multilayer structure and a magnetic sensitive axis, and at least one soft magnet disposed in the vicinity of the magnetoresistive element. The soft magnet has, as viewed from the direction of the layering of the magnetoresistive element, at least a slanted line at a corner portion thereof, the slanted line being slanted with respect to both sides of the soft magnet extending toward the corner portion.

[0009] A magnetic sensor according to the present application effectively shields a magnetic field toward a direction other than the direction of the magnetic sensitive axis when the soft magnet is used as a shield, and has a small hysteresis when the soft magnet is used as a magnetic yoke.

[0010] The above and other objects, features and advantages of the present application will become more apparent from the following description referring to the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1B is a perspective view of a main portion of a magnetic sensor according to a first embodiment;

[0012] Figure 1C is a circuit diagram of a magnetic sensor according to the first embodiment;

[0013] Figure 1D is a sectional view of an element portion constituting a main portion of a magnetic sensor according to the first embodiment;

[0014] Figure 2 is an enlarged view of an end portion with respect to a long axis direction of a soft magnet constituting a magnetic sensor according to the first embodiment;

[0015] Figure 3A is an enlarged view of an end portion with respect to a long axis direction of a soft magnet constituting a magnetic sensor according to a first comparative example;

[0016] Figure 3B is a graph showing the relationship between the chamfered area and the shielding rate of the magnetic field in the X axis direction caused by unnecessary magnetic domains;

[0017] Figure 3C is a graph showing the relationship between the chamfered area and the shielding rate of the magnetic field in the X axis direction caused by the volume of the end portion of the soft magnet in the long axis direction;

[0018] Figure 3A is a graph showing the relationship between the chamfered area and the shielding rate of the combination (i.e., the shielding rate calculated from the sum of the magnetic field in the X axis direction caused by the unnecessary magnetic domains and the magnetic field in the X axis direction caused by the volume of the end portion of the soft magnet in the long axis direction) of the magnetic field in the X axis direction; Figure 3B and Figure 4

[0019] Figure 5A is a graph showing the transmittance of the magnetic field in the X axis direction at different positions in the X axis direction of the soft magnets in the first embodiment and the first comparative example; ​

[0020] Figure 5B This is an enlarged view of the end of the soft magnet constituting the magnetic sensor according to the second embodiment about its long axis direction;

[0021] Figure 6 This is an enlarged view of the end of the soft magnet in the first embodiment about its long axis, showing the magnetic domains that the first embodiment has but the second embodiment does not;

[0022] Figure 7A This is an enlarged view of the end of the soft magnet constituting the magnetic sensor according to the third embodiment, about the direction parallel to its long side;

[0023] Figure 7B and Figure 8A These are a plan view and a side view of the main part of the magnetic sensor according to the fourth embodiment;

[0024] Figure 8B It is a graph showing the relationship between the chamfer area and the hysteresis value;

[0025] Figure 8C It is a graph showing the relationship between the chamfer area and the Q value (energy conversion efficiency);

[0026] Figure 9A It is a graph showing the relationship between the chamfer area and the Q value / hysteresis value;

[0027] Figure 9B and Figures 10A to 10J These are, respectively, a plan view and a side view of the main part of the magnetic sensor according to the fifth embodiment; and

[0028] Figures 1A to 1D These are enlarged views of the ends of the soft magnets in the first to tenth variations about their long axis. Detailed Implementation

[0029] Explanations of the first through fifth embodiments, as well as variations thereof, will be given. In the following description, unless otherwise defined, "end" means "end with respect to its long axis".

[0030] [First Embodiment]

[0031] The magnetic sensor 10 in this embodiment (see...) Figure 1A This is, for example, a sensor used to detect the position of a moving object (not shown) having a magnet, i.e., a position sensor. The magnetic sensor 10 of this embodiment is configured to move relative to the magnet described above, thereby detecting changes in the external magnetic field generated by the magnet, and calculating the distance moved by the moving object based on the detected changes in the external magnetic field. The magnetic sensor 10 of this embodiment has a magnetic sensing axis, which is the Y-axis described later (see [link to documentation]). Figure 1Aand detects a change in the magnetic field in the Y-axis direction. In the following description, the Z-axis direction (see Figure 1A ) corresponds to the stacking direction of each element portion 20 described later, and the X-axis direction (see Figure 1A ) corresponds to a direction perpendicular to both the Z-axis direction and the Y-axis direction.

[0032] The magnetic sensor 10 of the present embodiment is used, for example, for a lens position detection mechanism that constitutes an auto focus mechanism or an optical shake correction mechanism of a camera of a mobile information terminal or the like.

[0033] The magnetic sensor 10 of the present embodiment has a magnetoresistive element portion 100 composed of a plurality of element portions 20 (examples of magnetoresistive elements), a plurality of upper shields 32 (examples of soft magnets), and a plurality of lower shields 34 (another examples of soft magnets), as shown in Figure 1A and 1B . The upper shields 32 and the lower shields 34 form a pair of shields 30, as described below. A plurality of pairs of shields 30 are provided, and the pair of shields 30 is arranged in the X-axis direction in the orientation described later (see Figure 1B ).

[0034] As shown in Figure 1C , the magnetic sensor 10 of the present embodiment has a sensor portion 200 in which the magnetoresistive element portion 100 and the resistive element 110 are bridged to each other, and an integrated circuit 300 having an input terminal 310 electrically connected to the sensor portion 200, a ground terminal 320, a differential amplifier 330, and an external output terminal 340, and the like.

[0035] As described below (see Figure 1A ), each element portion 20 of the present embodiment has a film structure in which a film is stacked (structure of the stacked film). Here, the Z-axis direction is an example of the stacking direction. Each element portion 20 has a magnetoresistance effect, which is described later.

[0036] In the example, a plurality of element portions 20 form a group in which the element portions 20 are arranged in the Y-axis direction at a predetermined interval (see Figure 1C ). A plurality of groups are provided, and these groups are arranged in the X-axis direction at a predetermined interval. In each group formed by a plurality of element portions 20, the element portions 20 adjacent to each other are connected to each other by an electrode (not shown), and the combination of each group and each electrode forms a meandering shape. Furthermore, the combination of each group and each electrode is connected to another combination adjacent to the former in the X-axis direction via an electrode (not shown). Thus, the element portions 20 of the present embodiment are connected in series by a plurality of electrodes.

[0037] As described above, in the present embodiment, each group formed by a plurality of element portions 20 is arranged in the X-axis direction at a predetermined interval, but can be arranged in a direction other than the X-axis direction.

[0038] Each element portion 20 of the present embodiment has, for example, a typical spin valve type film configuration as shown in Figure 1A Specifically, each element portion 20 includes a free layer 151 whose magnetization direction changes depending on an external magnetic field, a pinned layer 153 whose magnetization direction is pinned with respect to the external magnetic field, a spacer layer 152 located between and in contact with both the free layer 151 and the pinned layer 153, and an antiferromagnetic layer 154 adjacent to the back surface of the pinned layer 153 as viewed from the spacer layer 152. The free layer 151, the spacer layer 152, the pinned layer 153, and the antiferromagnetic layer 154 are layered over a substrate (not shown). The antiferromagnetic layer 154 fixes the magnetization direction of the pinned layer 153 through exchange coupling with the pinned layer 153. The pinned layer 153 can also have a synthetic structure in which two ferromagnetic layers sandwich a nonmagnetic intermediate layer. The spacer layer 152 is a tunnel barrier layer formed of a nonmagnetic insulator such as AI2O3. Thus, each element portion 20 of the present embodiment is a tunnel magnetoresistance element (TMR element) having a tunnel magnetoresistance effect. The TMR element has an advantage that it has a larger MR ratio and a larger output voltage from a bridge circuit than a GMR element.

[0039] A pair of shields 30 of the present embodiment is arranged in the vicinity of each element portion 20 and has a function of shielding a magnetic field in the X-axis direction (absorbing an external magnetic field applied in the X-axis direction). The pair of shields 30 is composed of an upper shield 32 arranged on the upper side of the element portion 20 and a lower shield 34 arranged on the lower side of the element portion 20, as shown in Figure 1A In one example, the lower shield 34 has the same shape as the upper shield 32. As viewed from the Z-axis direction, the upper shield 32 and the lower shield 34 are elongated and arranged so that their long axes extend in the Y-axis direction and the former overlaps the latter. In the present embodiment, the Y-axis direction corresponds to the long axis direction of the upper shield 32 and the lower shield 34, and the X-axis direction corresponds to the short axis direction of the upper shield 32 and the lower shield 34. As viewed from the Z-axis direction, the upper shield 32 and the lower shield 34 are rectangular. The upper shield 32 and the lower shield 34 are arranged on the upper side and the lower side, respectively, of each group of element portions 20 arranged in the Y-axis direction, so that the upper shield 32 and the lower shield 34 sandwich each group of elements 20. This pair of shields 30 will sandwich the corresponding group arranged in the X-axis direction. Each upper shield 32 and lower shield 34 is formed of, for example, NiFe, CoFe, CoFeSiB, CoZrNb, or the like.

[0040] Thus, this pair of shields 30 arranged in the X-axis direction absorbs a magnetic field in the X-axis direction to shield a magnetic field in the X-axis direction applied to the region in which the element portions 20 are arranged.

[0041] Next, reference is made to Figure 1D and1D The shapes of the two ends 35 of the upper shield 32 and the lower shield 34 in this embodiment will be described below. The upper shield 32 will be described in the following description, as the lower shield 34 has the same shape as the upper shield 32 and is formed of the same material as the upper shield 32, as described above. Regarding the lower shield 34, refer to the following description of the upper shield 32. Viewed from the Z-axis direction, one end and the other end of the two ends 35 are axially symmetrical about an imaginary line extending in the X-axis direction. Therefore, in Figure 1A The illustration of the other end 35 is omitted.

[0042] As described above, each upper shield 32 is rectangular when viewed in the Z-axis direction (see...). Figure 1D Viewed along the Z-axis, each upper shield 32 is shaped such that each corner 36, i.e., all four corners 36, is chamfered. In this specification, the chamfered shape is referred to as a chamfered shape. In other words, each corner 36 of each upper shield 32 has a so-called C-chamfer or 45° chamfered shape, which can be considered as being formed, as viewed in the Z-axis direction, by removing the originally present vertex portion 37 (from...). Figure 2 The isosceles triangle defined by the dashed line and the solid line at angle 36 in the figure also see... Figure 1D This shape is formed by [the following]. That is, viewed from the Z-axis direction, each upper shield 32 has a sloping line that is inclined relative to the two sides 30X, 30Y (described later) of the facing corner 36 of the upper shield 32. In the present description, the sloping line can be interchanged with the corner 36; that is, the sloping line can be considered as the sloping line 36. It should be noted that, as viewed from the Z-axis direction, each shield 32, 34 of this embodiment has the same shape at any point perpendicular to the Z-axis direction.

[0043] As observed along the Z-axis, the chamfer area S at the top 37 is S1 (μm). 2 ) or larger and S2(μm 2 () or smaller. In this embodiment, S1 is 1.0 × 10 -3 And S2 is 2.5 × 10. Calculate the chamfer area S as follows. Assume the long side of the upper shield 32 is side 30Y (an example of an arbitrary line), the short side of the upper shield 32 is side 30X (an example of another line inclined relative to the arbitrary line), and the intersection of the extensions of side 30Y and side 30X is the intersection point IS, as shown in... Figure 2visible in the Z-axis direction. Here, "inclined with respect to an arbitrary line" means "not parallel to an arbitrary line". Further, assume that an imaginary line that is a part of an extension line of the side 30Y and connects the side 30Y to the intersection IS is an imaginary line 30YA. Assume that an imaginary line that is a part of an extension line of the side 30X and connects the side 30X to the intersection IS is an imaginary line 30XA. Assume that an area of a region surrounded by the imaginary line 30YA, the imaginary line 30XA, and the corner 36 as viewed in the Z-axis direction is a chamfered area S. As described above, each shield 32, 34 is an octagon, four corners 36 are chamfered at an angle of 45° as viewed in the Z-axis direction. Therefore, each corner has an angle of 135° or an obtuse angle as viewed in the Z-axis direction. Therefore, each shield 32, 34 of the present embodiment has a shape having an obtuse angle on at least a part of a circumference thereof as viewed in the Z-axis direction. Note that the side 30Y is an example of an arbitrary line, and the side 30X is an example of another line that is inclined with respect to an arbitrary line in the present embodiment, but the side 30X can be an example of an arbitrary line, and the side 30Y can be an example of another line that is inclined with respect to an arbitrary line. Note also that in the present embodiment, an arbitrary line is a long side and another line is a short side, but the opposite is also possible. For example, both an arbitrary line and another line have the same length.

[0044] Next, effects (first and second effects) of the present embodiment will be described with reference to the drawings. In the description, the present embodiment is compared with the first comparative example (see Figure 1A ) as needed, and when the same elements as in the first comparative example in the present embodiment are used, the names and reference numerals in the present embodiment will be used.

[0045] The first effect is obtained by the chamfered shape of at least one corner 36 of the upper shield 32 or the lower shield 34 (see Figure 1B and Figure 2 ). The first effect will be explained by comparing the present embodiment with the first comparative example (see Figure 2 ) described later. The same elements in the first comparative example as in the present embodiment are denoted by the names and reference numerals in the present embodiment.

[0046] In each shield 32A, 34A of the magnetic sensor 10A of the first comparative example, any corner 36 is not chamfered, and each corner 36 has an apex portion 37 (see Figure 2 ). The magnetic sensor 10A of the first comparative example is the same as the magnetic sensor 10 of the present embodiment except for the above.

[0047] In the magnetic sensor 10A of the first comparative example, as Figure 1AAs shown, an unstable magnetic field component Bx directed in the X-axis direction occurs at the edge of the end portion 35. In other words, a magnetic domain is generated in the direction along which the magnetic field is shielded by each shield 32A, 34A. As a result, in the magnetic sensor 10A of the first comparative example, the ability to shield the magnetic field of each shield 32, 34 deteriorates due to the unstable magnetic field component Bx.

[0048] In contrast, in each shield 32, 34 (see Figure 2 and 1D ) of the magnetic sensor 10 of the present embodiment, each corner portion 36 is formed in a chamfered shape without having a portion corresponding to the apex portion 3 (see Figure 3A ). In other words, each shield 32, 34 of the present embodiment does not have the apex portion 37 compared to each shield 32A, 34A of the first comparative example.

[0049] Therefore, in the magnetic sensor 10 of the present embodiment, the unstable magnetic field component Bx that occurs in the magnetic sensor 10A of the first comparative example does not occur or is less likely to occur. As a result, the magnetic sensor 10 of the present embodiment has a higher ability to shield the magnetic field in directions other than the direction of the magnetically sensitive axis compared to the magnetic sensor 10A of the first comparative example. In the present embodiment, each corner portion 36 of each shield 32, 34 is chamfered. Therefore, the present embodiment has a higher ability to shield the magnetic field in directions other than the direction of the magnetically sensitive axis compared to a configuration in which a portion of the corner portion 36 of each shield 32, 34 is chamfered but the other corner portions have the apex portion 37.

[0050] As viewed in the Z-axis direction, a second effect is obtained by setting the chamfered area S of the corner portion 36 of each shield 32, 34 to S1 (pm 2 ) or more and S2 (pm 2 ) or less. Here, S1 is 1.0 x 10 -3 , and S2 is 2.5 x 10. The second effect will be explained by comparing the present embodiment with the second and third comparative examples (not shown) described later. The same elements used in the present embodiment as those used in the second and third comparative examples will be denoted by the names and reference numerals in the present embodiment.

[0051] The second comparative example differs from the present embodiment in that the chamfered area S of each shield is smaller than S1 (pm 2 ). The third comparative example differs from the present embodiment in that the chamfered area S of each shield is larger than S2 (pm 2 ). Here, S1 is 1.0 x 10 -3S2 is 2.5 x 10. In addition to the above, the magnetic sensor according to the second and third comparative examples has the same configuration as the magnetic sensor 10 of the present embodiment.

[0052] Figure 3A is a graph showing the relationship between the chamfer area S and the shielding rate of the magnetic field in the X-axis direction of each shield 32, 34 (hereinafter referred to as the first shielding rate), which is caused by the unnecessary magnetic domain (a region that generates the magnetic field component Bx, as described above). As can be understood from the graph of Figure 3B It can be understood from the graph of that the larger the chamfer area S, or more precisely the volume of the chamfer area S as viewed in the Z-axis direction, or the unnecessary magnetic domain area (or more precisely the volume of the unnecessary magnetic domain), the higher the first shielding rate. Here, the X-axis direction corresponds to the direction in which the magnetic field is shielded in the magnetic sensor 10 of the present embodiment.

[0053] On the contrary, Figure 3B is a graph showing the relationship between the chamfer area S and the shielding rate of the magnetic field in the X-axis direction of each shield 32, 34 (hereinafter referred to as the second shielding rate), which depends on the area of the end portion 35 of each shield 32, 34 (as viewed in the Z-axis direction). As can be understood from the graph of Figure 3C It can be understood from the graph of that the larger the chamfer area S, or more precisely the volume of the chamfer area S as viewed in the Z-axis direction, the lower the second shielding rate.

[0054] Figure 3C is a graph showing the relationship between the chamfer area S and the average of the first shielding rate and the second shielding rate. In other words, Figure 3A is Figure 3C and 3B is a combination of the graphs of Figure 2 , the shielding rate of the first comparative example (see Figure 4 , chamfer area S = 0), the second comparative example (chamfer area S < S1), and the third comparative example (S2 < chamfer area S) are lower than the shielding rate of the present embodiment (S1 <= chamfer area S <= S2). Here, S1 is 1.0 x 10 -3 , S2 is 2.5 x 10.

[0055] Therefore, compared to the first to third comparative examples, the magnetic sensor 10 of the present embodiment is able to more effectively shield the magnetic field in the direction other than the direction of the magnetic sensitive axis.

[0056] Figure 1D is a graph showing the transmittance of the magnetic field in the X-axis direction of each shield 32, 34 at different positions in the present embodiment (see Figure 2) and a graph of simulation results of the permeability of the magnetic field at different positions of the soft magnet in the X-axis direction in the first comparative example (see Figure 4 ). As can be understood from the graph of Figure 5A , the present embodiment exhibits a lower magnetic field permeability at the center of the short side of each shield 32, 34 than the first comparative example. Therefore, the present embodiment can more effectively shield the magnetic field in a direction other than the magnetically sensitive axis direction than the first comparative example. The inventors believe that this difference is due to the presence / absence and size of the above-mentioned unnecessary magnetic domains.

[0057] [Second Embodiment]

[0058] Next, with reference to Figure 5A and 5B , the magnetic sensor 10B of the second embodiment will be described. In the following description, the differences between the present embodiment and the first embodiment will be described. When the same elements as in the first embodiment are used in the present embodiment, the names and reference numerals in the first embodiment will be used.

[0059] As shown in Figure 1D , in each shield 32B, 34B (another example of a soft magnet) of the magnetic sensor 10B of the present embodiment, the connecting portion of the first embodiment that is connected to the long side 30Y and the short side 30X and that is C-chamfered at the corner portion 36 is R-chamfered (indicated by R in the figure) (see Figure 5B ). In other words, the periphery of the corner portion 36 of the present embodiment is formed by a combination of a curve corresponding to the R-chamfered portion and a straight line corresponding to the C-chamfered portion, i.e., as viewed in the Z-axis direction, by a straight line and two curves each connected to both ends of the straight line. Since each shield 32B, 34B has the above-mentioned connecting portion along a part of the periphery, each shield 32B, 34B has a periphery that is at least partially formed by a curve as viewed in the Z-axis direction. In addition to the above, the magnetic sensor 10B of the present embodiment has the same configuration as the magnetic sensor 10A of the first embodiment.

[0060] Figure 6 is an enlarged view of the end portion 35 of each shield 32, 34 of the first embodiment as viewed in the Z-axis direction. In each shield 32, 34 of the first embodiment, in which the corner portion 36 is C-chamfered, a sharp edge (magnetic domain) remains at the connecting portion that connects the corner portion 36 to the long side 30Y and the short side 30X. This magnetic domain can cause an unstable magnetic field component Bx.

[0061] On the contrary, as described above, in the present embodiment, such a magnetic field component Bx does not occur because there is no sharp edge in the corner portion 36.

[0062] Accordingly, the magnetic sensor 10B of the present embodiment can shield a magnetic field in a direction other than the direction of the magnetic sensitive axis more effectively than the magnetic sensor 10A according to the first embodiment.

[0063] [Third Embodiment]

[0064] Next, with reference to Figure 7A , the magnetic sensor 10C of the third embodiment will be described. In the following description, differences between the present embodiment and the first embodiment will be explained. When the same elements as in the first embodiment are used in the present embodiment, the names and reference numerals in the first embodiment will be used.

[0065] In each shield 32C, 34C (another example of soft magnet) of the magnetic sensor 10C of the present embodiment, the corner portion 36 that was chamfered by C in the first embodiment is chamfered by R. In other words, as viewed in the Z-axis direction, the periphery of the corner portion 36 of the present embodiment is formed by a curve corresponding to the chamfering by R (indicated by an arrow R). As viewed from the Z-axis direction, since each shield 32B, 34B has a curve corresponding to the chamfering by R described above along a part of the periphery, each shield 32B, 34B has a periphery formed at least partially by a curve. In addition to the above, the magnetic sensor 10C of the present embodiment has the same configuration as the magnetic sensor 10 of the first embodiment.

[0066] The present embodiment has the same effects as the first and second embodiments.

[0067] [Fourth Embodiment]

[0068] Next, with reference to Figure 7A and 7B , the magnetic sensor 10D of the fourth embodiment will be described. In the following description, differences between the present embodiment and the first embodiment will be explained. When the same elements as in the first embodiment are used in the present embodiment, the names and reference numerals in the first embodiment will be used.

[0069] The magnetic sensor 10D of the present embodiment has an element portion 20 and a pair of magnetic yokes 30D (magnetic yokes 32D, 34D), as shown in Figure 1A and 7B . Each magnetic yoke 32D, 34D (another example of soft magnet) has the same shape as the upper shield 32 described above (see Figures 8A to 8C and 1D), and is formed of the same material as the aforementioned upper shield 32. Each of the magnetic yokes 32D, 34D is arranged in the Y-axis direction so that its long axis is parallel to the Y-axis direction, and so that the magnetic yokes 32D, 34D sandwich the element portion 20. The magnetic sensitive axis of the element portion 20 is directed in the Y-axis direction. In other words, the element portion 20 of the present embodiment has a magnetic sensitive axis in a direction that crosses the Z-axis direction, which is the direction in which it is stacked, or more specifically, in a direction that is substantially perpendicular to the Z-axis direction. In the present embodiment, the Y-axis direction corresponds to the long axis of each of the magnetic yokes 32D, 34D, and the X-axis direction corresponds to a direction parallel to the short axis of each of the magnetic yokes 32D, 34D. Each of the magnetic yokes 32D, 34D of the present embodiment collects a magnetic field in the Y-axis direction and guides the magnetic field collected in the Y-axis direction. In addition to the above, the magnetic sensor 10D of the present embodiment has the same configuration as the magnetic sensor 10 of the first embodiment. As can be understood from the above, each of the magnetic yokes 32D, 34D has an obtuse angle on at least a portion of its periphery, as viewed in the Z-axis direction.

[0070] Next, the effects of the present embodiment will be described with reference to Figure 2 the drawings. As viewed in the Z-axis direction, the effects of the present embodiment are obtained by chamfering the corner portions 36 of each of the magnetic yokes 32D, 34D, and by setting the chamfered area S to S1 (pm 2 ) or more and S2 (pm 2 ) or less. Here, S1 is 1.0 x 10 -3 , and S2 is 2.5 x 10 . The effects of the present embodiment will be explained by comparing the present embodiment with the fourth to sixth comparative examples (not shown) described later. When the same elements as in the fourth to sixth comparative examples are used in the present embodiment, the names and reference numerals in the present embodiment will be used.

[0071] In the fourth comparative example, each of the magnetic yokes is the same as each of the shield members 32A, 34A (see Figure 8A ) of the first comparative example. In other words, the corner portions of each of the magnetic yokes of the fourth comparative example do not have a chamfered shape. The fifth comparative example differs from the present embodiment in that the chamfered area S of each of the magnetic yokes is smaller than S1 (pm 2 ). The sixth comparative example differs from the present embodiment in that the chamfered area S of each of the magnetic yokes is larger than S2 (pm 2 ). Here, S1 is 1.0 x 10 -3 , and S2 is 2.5 x 10 . In addition to the above, the magnetic sensors according to the fourth to sixth comparative examples have the same configuration as the magnetic sensor 10D of the present embodiment.

[0072] Figure 8A is a graph showing the relationship between the chamfered area S and the hysteresis value. In other words, Figure 8AThe graph shows that the hysteresis value caused by unnecessary magnetic domains is smaller. The hysteresis value is a value proportional to the area of the region surrounded by the hysteresis curve. The smaller the hysteresis value, the better the performance of the magnetic sensor. As shown in the graph of FIG. 6, the smaller the chamfer area S, the larger the hysteresis value. The inventors believe that this is because when the chamfer area S becomes small, the unstable magnetic field component Bx (see FIG. 7) caused by unnecessary magnetic domains is likely to occur. Figure 2 The graph shows that the hysteresis value caused by unnecessary magnetic domains is smaller. The hysteresis value is a value proportional to the area of the region surrounded by the hysteresis curve. The smaller the hysteresis value, the better the performance of the magnetic sensor. As shown in the graph of FIG. 6, the smaller the chamfer area S, the larger the hysteresis value. The inventors believe that this is because when the chamfer area S becomes small, the unstable magnetic field component Bx (see FIG. 7) caused by unnecessary magnetic domains is likely to occur. Figure 8B

[0073] Figure 8B The graph shows that the hysteresis value caused by unnecessary magnetic domains is smaller. The hysteresis value is a value proportional to the area of the region surrounded by the hysteresis curve. The smaller the hysteresis value, the better the performance of the magnetic sensor. As shown in the graph of FIG. 6, the smaller the chamfer area S, the larger the hysteresis value. The inventors believe that this is because when the chamfer area S becomes small, the unstable magnetic field component Bx (see FIG. 7) caused by unnecessary magnetic domains is likely to occur. Figure 8C The graph shows that the hysteresis value caused by unnecessary magnetic domains is smaller. The hysteresis value is a value proportional to the area of the region surrounded by the hysteresis curve. The smaller the hysteresis value, the better the performance of the magnetic sensor. As shown in the graph of FIG. 6, the smaller the chamfer area S, the larger the hysteresis value. The inventors believe that this is because when the chamfer area S becomes small, the unstable magnetic field component Bx (see FIG. 7) caused by unnecessary magnetic domains is likely to occur.

[0074] Figure 8C The graph shows that the hysteresis value caused by unnecessary magnetic domains is smaller. The hysteresis value is a value proportional to the area of the region surrounded by the hysteresis curve. The smaller the hysteresis value, the better the performance of the magnetic sensor. As shown in the graph of FIG. 6, the smaller the chamfer area S, the larger the hysteresis value. The inventors believe that this is because when the chamfer area S becomes small, the unstable magnetic field component Bx (see FIG. 7) caused by unnecessary magnetic domains is likely to occur. Figure 5A As shown in the graph of FIG. 8, the larger the chamfer area S, or the smaller the area of the end portion 35, the lower the Q value. As shown in the graph of FIG. 9, the smaller the chamfer area S, the larger the Q value / hysteresis value. -3 S2 is 2.5 x 10

[0075] Therefore, compared to the fourth to sixth comparative examples, the magnetic sensor 10D of the fourth embodiment can reduce the hysteresis value while maintaining the Q value. As a result, the magnetic sensor 10D of the present embodiment can enhance the linearity of the hysteresis curve while maintaining the Q value.

[0076] <Fourth embodiment variation>

[0077] As described above, each magnetic yoke 32D, 34D of the present embodiment has the same shape as the shield of the first embodiment, but can have the same shape as the shield of the second embodiment (see FIG. 2) or the third embodiment (see FIG. 3). The end portion 35 of each magnetic yoke of this variation has a shape as shown in FIG. 10 (the periphery of the corner portion 36 is formed by a combination of curves and straight lines, as viewed in the Z-axis direction) or a shape as shown in FIG. 11 (the periphery of the corner portion 36 is formed by curves, as viewed in the Z-axis direction). Therefore, it is less likely that the unstable magnetic field component Bx (see FIG. 7) caused by unnecessary magnetic domains occurs. Figure 6 Figure 5A Figure 6 Figure 5B Figure 9A

[0078] ​​​​​​Accordingly, the modification of the fourth embodiment can further limit the hysteresis value compared to the fourth embodiment. As a result, the modification of the fourth embodiment can further enhance the linearity of the hysteresis curve.

[0079] [Fourth Embodiment]

[0080] Next, the magnetic sensor 10E of the fifth embodiment will be described with reference to Figure 9A and 9B . In the following description, the difference between the present embodiment and the fourth embodiment will be explained. When the same elements as in the fourth embodiment are used in the present embodiment, the names and reference numerals in the fourth embodiment will be used.

[0081] The magnetic sensor 10E of the present embodiment has the element portion 20 and a pair of magnetic yokes 30E (magnetic yokes 32E, 34E), as shown in Figure 1A and 9B . Each of the magnetic yokes 32E, 34E (another example of a soft magnet) is formed of the same material as the upper shield 32 described above (see Figure 9A and 1D ). Each of the magnetic yokes 32E, 34E is a cuboid, as viewed in the Z-axis direction, which is a square with four corner portions chamfered, and, as viewed in the X-axis direction or the Y-axis direction, which is a rectangle with a long axis extending in the Z-axis direction. The magnetic yoke 34E is disposed at a predetermined position downstream of the magnetic yoke 32E in the X-axis direction and the Y-axis direction, as viewed in the Z-axis direction (see Figure 9B ). The yokes 32E, 34E sandwich the element portion 20, as viewed in the Z-axis direction. The magnetically sensitive axis of the element portion 20 points in the Y-axis direction. The magnetic yoke 32E is disposed on the upper side of the element portion 20 with respect to the Z-axis direction, and the magnetic yoke 34E is disposed on the lower side of the element portion 20 with respect to the Z-axis direction, as viewed in the X-axis direction (see Figure 5A ). Each of the magnetic yokes 32E, 34E of the present embodiment collects the magnetic field in the Z-axis direction and guides the magnetic field collected in the Y-axis direction. The magnetic sensor 10E of the present embodiment has the same configuration as the magnetic sensor 10D of the fourth embodiment, except for the above.

[0082] As can be understood from the above, each of the magnetic yokes 32D, 34D has an obtuse angle on at least a portion of its periphery, as viewed in the Z-axis direction. In the present embodiment, the corner portion 36 can also be formed in the shape of the second embodiment (see Figure 6 ) or the third embodiment (see Figure 1D ) (modification of the fifth embodiment) in the same manner as the modification of the fourth embodiment.

[0083] The present embodiment has the same effects as the fourth embodiment.

[0084] The present application has been described by using the embodiments (first to fifth embodiments and modifications), but the present application is not limited to these. For example, the following embodiments (modifications) are also included in the scope of the present application.

[0085] For example, in each of the embodiments, the upper shield 32 and the lower shield 34 shield the magnetic field in the X-axis direction (i.e., in the short side direction thereof). However, the upper shield 32 and the lower shield 34 can shield the magnetic field in the Y-axis direction (i.e., in the long side direction thereof), and needless to say, such a configuration is also included in the scope of the present application.

[0086] Further, in the first embodiment, the corner portion 36 of each shield 32, 32 is C-chamfered (see Figure 5A ), and the corner portion 36 of each shield 32A, 34A is C-chamfered and further R-chamfered at both ends thereof in the second embodiment (see Figure 10A ). However, the end portion 35 can be formed into a shape different from the shape of each of the embodiments, as long as the above-described effects are obtained by removing unnecessary magnetic domains at the end portion 35. For example, as shown in Figure 10B , the shield 32F according to the first modification example can have an end portion 35 that is R-chamfered along the entire width of the short side as viewed in the Z-axis direction. The shield 32F according to the first modification example has a chamfered corner portion as viewed in the Z-axis direction, and has a periphery that is formed at least partially by a curve as viewed in the Z-axis direction.

[0087] Further, as shown in Figure 10C , each corner portion 36 of the shield 32G according to the second modification example can be formed so that the short side 30X as viewed in the Z-axis direction disappears (or almost disappears). The shield 32G according to the second modification example has a chamfered corner portion as viewed in the Z-axis direction, and has an obtuse angle on at least a portion of the periphery thereof as viewed in the Z-axis direction.

[0088] Further, as shown in Figure 10D , the shield 32H according to the third modification example can have a chamfered portion as viewed in the Z-axis direction, which is formed only by a curve (a curve having a corner point in this modification example). The shield 32H according to the third modification example has a chamfer as viewed in the Z-axis direction, and has a periphery that is formed at least partially by a curve as viewed in the Z-axis direction.

[0089] Further, as shown in Figure 10E , the shield 32I according to the fourth modification example can have at least one corner portion that is not chamfered (having an apex portion 37) and at least one chamfered corner portion as viewed in the Z-axis direction. The shield 32I according to the fourth modification example has at least one chamfered corner portion as viewed in the Z-axis direction, and has a periphery that is formed at least partially by a curve as viewed in the Z-axis direction.

[0090] Further, as shown in Figure 10F the fifth modification example, the shield 32J can be chamfered into a rhombus shape such that the short side 30X and the long side 30Y in the first embodiment disappear as viewed in the Z-axis direction. The shield 32J according to the fifth modification example has chamfered corners as viewed in the Z-axis direction and has obtuse angles on at least a portion of its periphery as viewed in the Z-axis direction. Note that the chamfered area S of this modification example is defined as the area of the region surrounded by the shield 32J by a rectangle formed by a line extending in the Y-axis direction from one end of the shield 32J to the other end and a line extending in the X-axis direction from one end of the shield 32J to the other end, i.e., the rectangle depicted by the dot-dash line in the figure.

[0091] Further, as shown in Figure 10G the sixth modification example, the shield 32K can be chamfered into a parallelogram such that the short side 30X in the first embodiment disappears as viewed in the Z-axis direction. The shield 32K according to the sixth modification example has chamfered corners as viewed in the Z-axis direction and has obtuse angles on at least a portion of its periphery as viewed in the Z-axis direction. Note that the chamfered area S of this modification example is defined as the area of the region surrounded by the shield 32K by a rectangle formed by a line extending in the Y-axis direction from one end of the shield 32K to the other end and a line extending in the X-axis direction from one end of the shield 32K to the other end, i.e., the rectangle depicted by the dot-dash line in the figure.

[0092] Further, as shown in Figure 10H the seventh modification example, the shield 32L can be chamfered into a trapezoid such that the short side 30X in the first embodiment disappears as viewed in the Z-axis direction. The shield 32L according to the seventh modification example has chamfered corners as viewed in the Z-axis direction and has obtuse angles on at least a portion of its periphery as viewed in the Z-axis direction. Note that the chamfered area S of this modification example is defined as the area of the region surrounded by the shield 32L by a rectangle formed by a line extending in the Y-axis direction from one end of the shield 32K to the other end (line of the long side) and a line extending in the X-axis direction from one end of the shield 32K to the other end (line in the height direction), i.e., the rectangle depicted by the dot-dash line in the figure.

[0093] Further, as shown in Figure 10I the eighth modification example, the shield 32M can be chamfered into an ellipse such that the short side 30X and the long side 30Y in the first embodiment disappear as viewed in the Z-axis direction. The shield 32M according to the eighth modification example has chamfered corners as viewed in the Z-axis direction and has a periphery formed at least partially by a curved line as viewed in the Z-axis direction. Note that the chamfered area S of this modification example is defined as the area of the region surrounded by the shield 32M by a rectangle defined by the major axis and the minor axis of the shield 32M, i.e., the rectangle depicted by the dot-dash line in the figure.

[0094] In each embodiment and each variation, each shielding element is elongated. However, the shielding element can have shapes other than elongated shapes, as long as the aforementioned effects are achieved by removing unwanted magnetic domains at the ends. For example, as Figure 10J As shown, the shielding member 32N according to the ninth modification can have a square shape with the same length in the X and Y axes, as viewed in the Z-axis direction. The shielding member 32N according to the ninth modification has chamfered corners as viewed in the Z-axis direction, and a periphery that is at least partially formed by a curve, as viewed in the Z-axis direction. In this modification, the chamfer area S can be calculated in the same manner as in the embodiments described above.

[0095] In each embodiment and each variation, each shield is rectangular. However, the shield can have shapes other than rectangular, as long as the aforementioned effect is achieved by removing unwanted magnetic domains at the ends. For example, as... Figure 1D As shown, the shielding member 32O according to the tenth modification can have a circular shape with the same length in the X and Y axes, as viewed in the Z-axis direction. The shielding member 32O according to the tenth modification has chamfered corners as viewed in the Z-axis direction, and a periphery that is at least partially formed by curves, as viewed in the Z-axis direction. It should be noted that the chamfered area S of this modification is defined as the area enclosed by the square surrounded by the shielding member 32O and the rectangle depicted by the dashed line in the figure, which is a square with a length equal to the diameter of the shielding member 32O.

[0096] It should be noted that the first to tenth variations can also be applied to the magnetic yokes 32D, 32E, etc. of the fourth and fifth embodiments.

[0097] In each embodiment, the chamfer area S, as defined in the specification, is S1 (μm). 2 ) or larger and S2(μm 2 (or smaller). Here, S1 is 1.0 × 10⁻⁶. -3 And S2 is 2.5 × 10. However, it can be replaced, for example, by the intersection point IS on the normal line passing through corner 36 of the intersection point IS, as viewed in the Z-axis direction (see...). Figure 7A The distance between the bevel and the corner 36 can be defined as distance d. Assume the area corresponding to the bevel is S1 (μm). 2 The distance d is the distance d1 (μm), and corresponds to the chamfer area S2 (μm). 2 The distance d is the distance d2 (μm). Therefore, it can be said that in each embodiment and each variation, the distance d should be d1 (μm) or greater and d2 (μm) or smaller. The distance d1 is 1.0 × 10⁻⁶. -3 And the distance to d2 is 5.0.

[0098] In the fourth embodiment, each magnetic yoke 32D, 34D collects a magnetic field in the Y-axis direction and guides the magnetic field collected in the Y-axis direction (see Figure 9A and 7B ). In the fifth embodiment, each magnetic yoke 32E, 34E collects a magnetic field in the Z-axis direction and guides the magnetic field collected in the Y-axis direction (see ​ and 9B ). However, each magnetic yoke 32D, 34D and each magnetic yoke 32E, 34E can collect a magnetic field in the X-axis direction and guide the magnetic field collected in the X-axis direction. Needless to say, a configuration that collects a magnetic field in a direction other than the fourth and fifth embodiments and that guides the collected magnetic field in a different direction is included in the scope of the present application.

[0099] In each embodiment, the spacer layer constituting the element portion 20 is a tunnel barrier layer, and the element portion 20 is a TMR element. However, the spacer layer constituting the element portion 20 can be a non-magnetic conductive layer formed of a non-magnetic metal such as Cu, so as to form the element portion 20 as a giant magnetoresistance element (GMR element). The element portion 20 can also be an anisotropic magnetoresistance element (AMR element).

[0100] Each embodiment has been described by taking a position sensor as an example. However, the magnetic sensor can be a sensor other than a position sensor. For example, the magnetic sensor can be a compass that detects the geomagnetism, an angle sensor, an encoder, or the like.

[0101] Needless to say, an embodiment in which one of the above-described embodiments, a modification thereof, and the first to fourth modified examples are combined with elements (or ideas) of other embodiments is included in the scope of the present application.

[0102] While certain preferred embodiments of the present application have been shown and described in detail, it will be understood that various changes and modifications can be made without departing from the spirit or scope of the appended claims.

Claims

1. A magnetic sensor, wherein, have: Multiple magnetoresistive elements; and Multiple pairs of soft magnets shield the magnetic field applied to the multiple magnetoresistive elements. Viewed from the thickness direction of each of the plurality of magnetoresistive elements, each soft magnet comprises two pairs of straight edges and at least one inclined edge, wherein the at least one inclined edge is located between two adjacent straight edges, and the inclined edge is inclined relative to each of the adjacent straight edges. The plurality of magnetoresistive elements are respectively formed into multiple groups containing multiple magnetoresistive elements. The multiple magnetoresistive elements in each group are arranged along an arrangement axis. The multiple groups are arranged in a direction orthogonal to both the arrangement axis and the film thickness direction. Each pair of soft magnets faces the opposing surfaces of the corresponding magnetoresistive elements in the plurality of magnetoresistive elements in the film thickness direction, and the plurality of pairs of soft magnets are arranged in a direction orthogonal to both the arrangement axis and the film thickness direction.

2. A magnetic sensor, wherein, have: Multiple magnetoresistive elements; as well as Multiple soft magnets shield the magnetic field applied to the multiple magnetoresistive elements. Viewed from the thickness direction of each of the plurality of magnetoresistive elements, each soft magnet comprises two pairs of straight edges and at least one inclined edge, wherein the at least one inclined edge is located between two adjacent straight edges, and the inclined edge is inclined relative to each of the adjacent straight edges. The plurality of magnetoresistive elements are respectively formed into multiple groups containing multiple magnetoresistive elements. The multiple magnetoresistive elements in each group are arranged along an arrangement axis. The multiple groups are arranged in a direction orthogonal to both the arrangement axis and the film thickness direction. Each soft magnet is positioned so that it faces one of the opposing surfaces of the corresponding magnetoresistive element among the plurality of magnetoresistive elements in the film thickness direction, and the plurality of soft magnets are arranged in a direction orthogonal to both the arrangement axis and the film thickness direction.

3. A magnetic sensor, wherein, have: Multiple magnetoresistive elements; and A soft magnet that shields the magnetic field applied to the plurality of magnetoresistive elements. Viewed from the thickness direction of each of the plurality of magnetoresistive elements, the soft magnet comprises two pairs of straight edges and at least one inclined edge, the at least one inclined edge being located between two adjacent straight edges, the inclined edge being inclined relative to each of the adjacent straight edges. The plurality of magnetoresistive elements are respectively formed into multiple groups containing multiple magnetoresistive elements. The multiple magnetoresistive elements in each group are arranged along an arrangement axis. The multiple groups are arranged in a direction orthogonal to both the arrangement axis and the film thickness direction. The soft magnet is disposed on one side of the film thickness direction of the plurality of magnetoresistive elements.

4. A magnetic sensor, wherein, have: Magnetoresistive elements; and A pair of soft magnets, positioned on either side of the magnetoresistive element in a direction orthogonal to the film thickness direction, collect the magnetic field input to the magnetoresistive element. The magnetoresistive element has a magnetic sensing axis along the direction of detecting changes in the magnetic field, and the pair of soft magnets are arranged on both sides of the magnetic sensing axis. Viewed from the film thickness direction of the magnetoresistive element, each soft magnet comprises two pairs of straight edges and at least one inclined edge, the at least one inclined edge being located between two adjacent straight edges, the inclined edge being inclined relative to each of the adjacent straight edges.

5. A magnetic sensor, wherein, have: Magnetoresistive elements; as well as At least one soft magnet is disposed near the magnetoresistive element to collect the magnetic field input to the magnetoresistive element. Viewed from the film thickness direction of the magnetoresistive element, each soft magnet comprises two pairs of straight edges and at least one inclined edge, the at least one inclined edge being located between two adjacent straight edges, the inclined edge being inclined relative to each of the adjacent straight edges. The area of ​​the region, as observed from the film thickness direction and enclosed by the extensions of the inclined edge and each of the two adjacent straight edges, is 1.0 × 10⁻⁶. -3 μm 2 Above and 2.5×10μm 2 the following, The magnetoresistive element has a magnetic axis along the direction of detecting changes in the magnetic field, and has two opposing sides in the direction of the magnetic axis. Each of the at least one soft magnet is disposed on each of the two sides of the magnetoresistive element, and each of the at least one soft magnet is (i) separated from the magnetoresistive element in the direction of the magnetic axis, or (ii) separated from the magnetoresistive element in a direction inclined from the direction of the magnetic axis.

6. A magnetic sensor, wherein, have: Magnetoresistive elements; as well as At least one soft magnet is disposed near the magnetoresistive element to collect the magnetic field input to the magnetoresistive element. Viewed from the film thickness direction of the magnetoresistive element, each soft magnet has two pairs of straight edges and at least one inclined edge. The at least one inclined edge is located between two adjacent straight edges, and the inclined edge is inclined relative to each of the adjacent straight edges. There are multiple magnetoresistive elements. The plurality of magnetoresistive elements each have a plurality of groups comprising a plurality of magnetoresistive elements, the plurality of magnetoresistive elements in each group being arranged along an arrangement axis, and the plurality of groups being arranged in a direction orthogonal to both the arrangement axis and the film thickness direction. At least one soft magnet is present in a plurality of such magnets, arranged in a manner orthogonal to both the arrangement axis and the film thickness direction.

7. A magnetic sensor, wherein, have: Magnetoresistive elements; as well as At least one soft magnet is disposed near the magnetoresistive element to collect the magnetic field input to the magnetoresistive element. Viewed from the film thickness direction of the magnetoresistive element, each soft magnet has two pairs of straight edges and at least one inclined edge. The at least one inclined edge is located between two adjacent straight edges, and the inclined edge is inclined relative to each of the adjacent straight edges. The distance between the intersection of the extensions of the two adjacent straight sides, as observed from the film thickness direction, and the inclined side is 1.0 × 10⁻⁶. -3 Above 5.0 μm and below 5.0 μm The magnetoresistive element has a magnetic axis along the direction of detecting changes in the magnetic field, and has two opposing sides in the direction of the magnetic axis. Each of the at least one soft magnet is disposed on each of the two sides of the magnetoresistive element, and each of the at least one soft magnet is (i) separated from the magnetoresistive element in the direction of the magnetic axis, or (ii) separated from the magnetoresistive element in a direction inclined from the direction of the magnetic axis.

8. The magnetic sensor according to any one of claims 1 to 7, wherein, Viewed from the film thickness direction, all the inclined edges of the soft magnet are composed of at least a portion of inclined lines.

9. The magnetic sensor according to any one of claims 1 to 7, wherein, Viewed from the film thickness direction, the inclined edge consists only of straight lines.

10. The magnetic sensor according to any one of claims 1 to 7, wherein, Viewed from the film thickness direction, the inclined edge consists only of curves.

11. The magnetic sensor according to any one of claims 1 to 7, wherein, Viewed from the film thickness direction, the inclined edge is composed of a line consisting of a combination of curves and straight lines.

12. The magnetic sensor according to any one of claims 1 to 7, wherein, Viewed from the film thickness direction, the inclined edge is composed of a straight line and two curves respectively connecting the two ends of the straight line.

13. The magnetic sensor according to any one of claims 1 to 6, wherein, Viewed from the film thickness direction, the distance between the intersection of the extensions of the two adjacent straight sides and the inclined side is 1.0 × 10⁻⁶. -3 Above μm and below 5.0 μm.

Images