Method for manufacturing an electrode for a semiconductor device and semiconductor device

Abstract

The application discloses a manufacturing method of an electrode for a semiconductor device and the semiconductor device. The manufacturing method comprises the following steps: arranging a welding area on an electrode body; arranging a first indicating area covering the welding area on the welding area; arranging a first light-transmitting protective area covering the first indicating area on the first indicating area; and removing the first light-transmitting protective area and the first indicating area. The application also discloses a semiconductor device manufactured by using the manufacturing method. According to the application, whether the protective layer at the welding area is completely removed can be judged only by using a microscope, and resistance testing on the welding area is not needed, so that the testing steps are reduced, and time is saved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a manufacturing method of an electrode for a semiconductor device and the semiconductor device. BACKGROUND

[0002] Silicon oxide is widely used as a protective layer in semiconductor devices. Usually, a layer of silicon oxide is plated on the surface of a semiconductor device as a protective layer after the completion of a metal electrode. However, since silicon oxide is an insulating material, in order to conduct an electrical signal, the silicon oxide at the solder pad of the semiconductor device needs to be removed so as to expose the conductive medium for subsequent connection of a circuit. The commonly used techniques for removing silicon oxide include wet etching and dry etching.

[0003] After etching, observation under a microscope is needed to determine whether the silicon oxide at the solder pad is completely removed. However, since silicon oxide itself is a light-transmitting substance, observation under the microscope cannot accurately determine whether there is residual silicon oxide, so usually the resistance value of the solder pad needs to be measured for accurate determination, which not only consumes time but also involves very complicated steps. Moreover, if the determination is incorrect and there is residual silicon oxide at the solder pad, the product will need to be reworked, and in serious cases, the product will be scrapped. SUMMARY

[0004] Therefore, the technical problem to be solved by the present application is to provide a manufacturing method of an electrode for a semiconductor device and the semiconductor device, which can determine whether the protective layer at the solder area is completely removed only by using a microscope, without the need for resistance testing of the solder area, thereby reducing the testing steps and saving time.

[0005] To solve the above technical problem, the technical solution adopted by the present application is as follows:

[0006] In one aspect, the present application provides a manufacturing method of an electrode for a semiconductor device, comprising:

[0007] providing a solder area on the electrode body;

[0008] providing a first indication area covering the solder area on the solder area;

[0009] providing a first light-transmitting protective area covering the first indication area on the first indication area;

[0010] removing the first light-transmitting protective area and the first indication area.

[0011] Further, the provision of a solder area on the electrode body comprises:

[0012] forming the solder area on the electrode body by using a photolithography method.

[0013] Preferably, the soldering area is formed on the electrode body by using photolithography, comprising:

[0014] A first photoresist area is arranged on the electrode body, the first photoresist area comprising a first etching area matching the soldering area;

[0015] The first etching area is shielded by using a mask, and then the first photoresist area is exposed;

[0016] The first etching area is etched to obtain the soldering area.

[0017] More preferably, the first photoresist area further comprises a first reserved area matching the non-soldering area of the electrode body; a first indication area covering the soldering area is arranged on the soldering area, specifically:

[0018] The first indication area covering the soldering area is arranged on the soldering area by using a stripping method.

[0019] More preferably, the first indication area covering the soldering area is arranged on the soldering area by using a stripping method, comprising: forming an indication area on the first photoresist area, the indication area comprising the first indication area covering the soldering area and a second indication area covering the first reserved area;

[0020] The first reserved area and the second indication area are removed by using ultrasonic and / or soaking stripping liquid.

[0021] Further, a first light-transmitting protection area covering the first indication area is arranged on the first indication area, comprising: arranging a light-transmitting protection area on the electrode body;

[0022] An area of the light-transmitting protection area covering the first indication area is defined as the first light-transmitting protection area;

[0023] An area of the light-transmitting protection area covering at least part of the non-soldering area of the electrode body is defined as a second light-transmitting protection area.

[0024] Preferably, the first light-transmitting protection area and the first indication area are removed, comprising:

[0025] The first light-transmitting protection area is removed by using photolithography.

[0026] More preferably, the first light-transmitting protection area is removed by using photolithography, comprising:

[0027] A second photoresist area is arranged on the light-transmitting protection area, the second photoresist area comprising a second etching area corresponding to the first light-transmitting protection area and a second reserved area corresponding to the second light-transmitting protection area;

[0028] Exposing the second photoresist region after shielding the second etching region by a mask;

[0029] Etching the second etching region and the first light-transmissive protection region.

[0030] Preferably, the solder region is a solder pad; the method further comprises, after removing the first light-transmissive protection region and the first indicator region:

[0031] The first indicator region is removed by a wet etching method.

[0032] In another aspect, the application provides a semiconductor device comprising an electrode prepared by the method for manufacturing an electrode for a semiconductor device.

[0033] In summary, compared with the prior art, the technical solution provided by the application has at least the following beneficial effects:

[0034] The method for manufacturing an electrode for a semiconductor device mainly employs the following technical means: first, an indicator region is arranged on the solder region to cover the solder region; then, a first light-transmissive protection region is arranged on the indicator region to cover the indicator region; finally, the first light-transmissive protection region and the indicator region are removed. The indicator region serves as a marker for the first light-transmissive protection region. The prepared electrode is placed under a microscope for observation: if the indicator region is found, it indicates that the first light-transmissive protection region has not been completely removed; if the indicator region is not found, it indicates that the first light-transmissive protection region has been completely removed. Therefore, whether the protection region at the solder region has been completely removed can be determined only by the microscope without the need for subsequent resistance testing of the solder region, thereby reducing the testing steps and saving time. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 is a flowchart of a method for manufacturing an electrode for a semiconductor device provided by a more preferred exemplary embodiment of the application.

[0036] Figure 2 is a flowchart of a method for manufacturing an electrode for a semiconductor device provided by another more preferred exemplary embodiment of the application.

[0037] Figure 3 is a structural diagram of a semiconductor device provided by a more preferred exemplary embodiment of the application.

[0038] wherein, Figure 3 The reference signs in are explained as follows:

[0039] 1, substrate; 2, electrode body; 3, solder pad; 4, second light-transmissive protection region; 5, second reserved region. DETAILED DESCRIPTION

[0040] The specific embodiments are only illustrative of the present application, and are not intended to limit the present application. Those skilled in the art can make modifications to the embodiments according to the present application without creative contribution, and the modifications are within the scope of the present application as long as they are within the scope of the claims of the present application.

[0041] To make the objectives, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative contribution are within the scope of the present application.

[0042] The term “comprising” and any variation thereof in the specification and claims of the present application is intended to cover not exclusively including, for example, a process, method, system, product or apparatus including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units that are not clearly listed or inherent to the process, method, product or apparatus.

[0043] In the embodiments of the present application, the word “exemplary” or “for example” is used to mean serving as an example, instance, or illustration. Any embodiment or design presented as “exemplary” or “for example” in the embodiments of the present application should not be construed as being more preferred or advantageous than other embodiments or designs. In fact, a word “exemplary” or “for example” is used to present concepts in a concrete manner.

[0044] The embodiments of the present application will be described in further detail below with reference to the drawings of the specification.

[0045] Figure 1 The first exemplary embodiment of the present application provides a method for manufacturing an electrode for a semiconductor device, comprising:

[0046] S1: providing a soldering area on an electrode body;

[0047] S2: providing a first indicating area covering the soldering area on the soldering area;

[0048] S3: providing a first light-transmitting protective area covering the first indicating area on the first indicating area;

[0049] S4: removing the first light-transmitting protective area and the first indicating area.

[0050] The manufacturing method of the electrode of the semiconductor device in the first example embodiment of the present application adopts the main technical means of first disposing a first indicating area covering the soldering area on the soldering area, then disposing a first light-transmissive protective area covering the first indicating area on the first indicating area, and finally removing the first light-transmissive protective area and the first indicating area, and uses the first indicating area as a marker of the first light-transmissive protective area to place the manufactured electrode under a microscope for observation: if the first indicating area is found, it indicates that the first light-transmissive protective area has not been completely removed, and if the first indicating area is not found, it indicates that the first light-transmissive protective area has been completely removed, so that whether the protective area at the soldering area is completely removed can be determined only by the microscope without subsequent resistance test on the soldering area, thereby reducing the test steps and saving time.

[0051] It should be noted that the first indicating area needs to have the following characteristics:

[0052] 1. The color is different from the color of the soldering area.

[0053] 2. It is not light-transmissive.

[0054] The color difference between the first indicating area and the soldering area is more than 50%, which can make the naked eye recognition rate of the first indicating area and the soldering area under the microscope reach more than 80%, thereby greatly improving the recognition degree between the first indicating area and the soldering area.

[0055] The first indicating area is in a single-layer structure or a multi-layer structure or a block structure. In order to simplify the processing procedure, as a preferred embodiment of the first example embodiment of the present application, the first indicating area is in a single-layer structure.

[0056] As a preferred embodiment of the first example embodiment of the present application, the material of the soldering area is platinum, and the material of the first indicating area is at least one of nickel, copper or iron.

[0057] In order to reduce the processing difficulty of the electrode and improve the processing efficiency, in other example embodiments, the material of the first indicating area is preferably nickel.

[0058] In order to reduce the processing cost of the electrode, in other example embodiments, the material of the first indicating area is preferably copper.

[0059] Alternatively, in order to improve the conductivity of the soldering area, as another preferred embodiment of the first example embodiment of the present application, the material of the soldering area is gold, and the material of the first indicating area is at least one of nickel, copper or aluminum.

[0060] It should be noted that the material of the first light-transmissive protective area is at least one of silicon oxide or silicon nitride.

[0061] In order to improve the static friction force between the first indicating area and the first light-transmitting protection area, make the first light-transmitting protection area have higher combination degree after covering the first indicating area, improve the adhesion of the first light-transmitting protection area on the first indicating area, and reduce the probability of the first light-transmitting protection area falling off from the first indicating area, as a preferred embodiment of the first example of the present application, as shown in the S3: the first indicating area is provided with the first light-transmitting protection area covering the first indicating area. Figure 2 As shown in the S3: the first indicating area is provided with the first light-transmitting protection area covering the first indicating area.

[0062] S3”: roughen the surface of the first indicating area.

[0063] The second example of the present application is further improved on the basis of the first example of the present application, and the specific improvements are as follows:

[0064] The electrode body is provided with a welding area, which includes:

[0065] The welding area is formed on the electrode body by using photolithography.

[0066] Specifically, the welding area is formed on the electrode body by using photolithography, which includes:

[0067] The first photoresist area is provided on the electrode body, and the first photoresist area includes a first etching area matched with the welding area.

[0068] The first etching area is shielded by using a mask, and then the first photoresist area is exposed.

[0069] The first etching area is etched to obtain the welding area.

[0070] Through the implementation of the second example of the present application, people can conveniently and simply set the welding area on the electrode body.

[0071] The third example of the present application is further improved on the basis of the second example of the present application, and the specific improvements are as follows:

[0072] The first photoresist area further includes a first reserved area matched with the non-welding area of the electrode body; the first indicating area covering the welding area is provided on the welding area, specifically:

[0073] The first indicating area covering the welding area is provided on the welding area by using peeling method.

[0074] The first indicating area covering the welding area is provided on the welding area by using peeling method, which includes:

[0075] forming an indication area on the first photoresist area, the indication area including a first indication area covering the solder area and a second indication area covering the first reserved area;

[0076] removing the first reserved area and the second indication area by means of ultrasonic and / or soaking in a stripping solution.

[0077] By implementing the third exemplary embodiment of the present application, the first reserved area and the second indication area can be quickly and effectively removed.

[0078] It should be noted that the material of the second indication area is the same as that of the first indication area, which will not be repeated here.

[0079] The fourth exemplary embodiment of the present application is further improved on the basis of the third exemplary embodiment of the present application, and the specific improvements are as follows:

[0080] providing a first light-transmitting protection area covering the first indication area on the first indication area, including:

[0081] providing a light-transmitting protection area on the electrode body;

[0082] defining the area of the light-transmitting protection area covering the first indication area as a first light-transmitting protection area;

[0083] defining the area of the light-transmitting protection area at least partially covering the non-solder area of the electrode body as a second light-transmitting protection area.

[0084] It should be noted that the material of the second light-transmitting protection area is the same as that of the first light-transmitting protection area, which will not be repeated here.

[0085] Specifically, removing the first light-transmitting protection area and the first indication area includes:

[0086] removing the first light-transmitting protection area by means of photolithography.

[0087] Specifically, removing the first light-transmitting protection area by means of photolithography includes:

[0088] providing a second photoresist area on the light-transmitting protection area, the second photoresist area including a second etching area corresponding to the first light-transmitting protection area and a second reserved area corresponding to the second light-transmitting protection area;

[0089] shielding the second etching area by means of a mask, and then exposing the second photoresist area;

[0090] etching the second etching area and the first light-transmitting protection area.

[0091] By implementing the fourth exemplary embodiment of the present application, the second etching area and the first light-transmissive protection area can be effectively removed.

[0092] The inventors have found that, when the soldering area is in a disc structure (i.e., the soldering area is a soldering pad), for such a large-size and low-precision part as a soldering pad, a wet etching method is usually used to remove the silicon oxide.

[0093] To this end, the fifth exemplary embodiment of the present application is further improved on the basis of the fourth exemplary embodiment of the present application, and the specific improvements are as follows:

[0094] The soldering area is a soldering pad; and the removing the first light-transmissive protection area and the first indicating area further comprises:

[0095] The first indicating area is removed by using a wet etching method.

[0096] By implementing the fifth exemplary embodiment of the present application, the size and precision requirements of the soldering pad can be effectively matched to remove the first indicating area.

[0097] In the fifth exemplary embodiment of the present application, the wet etching method is generally used to etch the first indicating area by using a chemical solution, such as a BOE (Buffered Oxide Etch) solution. In another exemplary embodiment of the present application, in order to match the shape of the corresponding soldering area, a dry etching method can also be used to remove the first indicating area, which should fall within the protection scope of the present application and will not be repeated here.

[0098] The inventors have found that, in order to take into account the consumable amount requirement (i.e., the consumable weight should not exceed 1 g), the manufacturing requirement (i.e., the overall uniformity should be less than or equal to 5%), and the etching time requirement (i.e., the etching time should not exceed 1 min, because if it exceeds 1 min, the area range of 1 mm2 beyond the soldering area will be etched, reducing the yield of the product) of the first indicating area, the thickness of the first indicating area must be specially limited.

[0099] To solve the above problems, the sixth to tenth exemplary embodiments of the present application are respectively further improved on the basis of the first to fifth exemplary embodiments of the present application, and the specific improvements are as follows:

[0100] The thickness of the first indicating area is between 10-100 nm.

[0101] When the thickness of the first indicating area is less than 10 nm, although the amount of consumables is low and the etching time is short, the difficulty of manufacturing is very great (i.e. the overall uniformity reaches 7%), which cannot meet the requirements of manufacturing the electrode of the semiconductor device; when the thickness of the first indicating area is greater than 100 nm, although the difficulty of manufacturing can be greatly reduced (i.e. the overall uniformity reaches 3%), the amount of consumables exceeds the highest requirement of the amount of consumables, and the etching time requirement also exceeds the highest requirement of the etching time.

[0102] Therefore, the inventor believes that the thickness of the first indicating area is between 10-100 nm, which can simultaneously meet the requirements of the amount of consumables, the manufacturing requirements and the etching time of the first indicating area.

[0103] The following table is the detailed data of the amount of consumables, the etching time and the uniformity of the first indicating area with different thicknesses.

[0104] Thickness value (nm) Consumable amount (g) Etching man-hours (s) Overall uniformity (%) 2 0.02 2 10 5 0.05 4 7 10 0.1 8 5 30 0.3 24 4.5 50 0.5 40 3 75 0.75 60 2.5 100 1.0 80 2 150 1.5 120 1

[0105] As a preferred embodiment of the sixth to tenth exemplary embodiments of the present application, the thickness of the first indicating area is between 50-100 nm, so that the overall uniformity of the first indicating area can reach at least 3%.

[0106] Further preferably, the thickness of the first indicating area is 50 nm-75 nm, so that the amount of consumables, the uniformity and the etching time of the first indicating area are optimally matched.

[0107] Figure 3 The eleventh exemplary embodiment of the present application provides a semiconductor device comprising an electrode manufactured by using any one of the manufacturing methods of the electrode for semiconductor device according to the first to tenth exemplary embodiments.

[0108] Specifically, the electrode comprises a substrate 1, an electrode body 2 provided on the substrate 1, and a pad 3 provided on the electrode body 2; a second light-transmitting protection area 4 is provided between adjacent pads 3; and a second reserved area 5 is provided on the second light-transmitting protection area 4.

[0109] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments, which are only illustrative but not restrictive, and those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope protected by the claims.

Claims

1. A method for manufacturing an electrode for a semiconductor device, characterized by, The method comprises the following steps: The soldering area is set on the electrode body by using a photoetching method, which comprises the following steps: setting a first photoresist area on the electrode body, the first photoresist area comprising a first etching area matching the soldering area and a first reserved area matching the non-soldering area of the electrode body; shielding the first etching area by using a mask, and then exposing the first photoresist area; etching the first etching area to obtain the soldering area; The first indicating area covering the soldering area is set on the soldering area by using a stripping method, which comprises the following steps: forming an indicating area on the first photoresist area, the indicating area comprising the first indicating area covering the soldering area and a second indicating area covering the first reserved area, and removing the first reserved area and the second indicating area by using ultrasonic and / or soaking stripping liquid; The first light-transmitting protection area covering the first indicating area is set on the first indicating area, which comprises the following steps: setting a light-transmitting protection area on the electrode body; defining the area of the light-transmitting protection area covering the first indicating area as the first light-transmitting protection area; and defining the area of the light-transmitting protection area at least partially covering the non-soldering area of the electrode body as the second light-transmitting protection area; The first light-transmitting protection area and the first indicating area are removed.

2. The method for manufacturing an electrode for a semiconductor device according to claim 1, wherein The first light-transmitting protection area and the first indicating area are removed, which comprises the following steps: The first light-transmitting protection area is removed by using a photoetching method.

3. The method for manufacturing an electrode for a semiconductor device according to claim 1, wherein The first light-transmitting protection area is removed by using a photoetching method, which comprises the following steps: A second photoresist area is set on the light-transmitting protection area, the second photoresist area comprising a second etching area corresponding to the first light-transmitting protection area and a second reserved area corresponding to the second light-transmitting protection area; The second etching area is shielded by using a mask, and then the second photoresist area is exposed; The second etching area and the first light-transmitting protection area are etched.

4. The method for manufacturing an electrode for a semiconductor device according to claim 1, wherein The soldering area is a soldering pad; The first light-transmitting protection area and the first indicating area are removed, which further comprises the following steps: The first indicating area is removed by using a wet etching method.

5. A semiconductor device, characterized by, The electrode is manufactured by using the manufacturing method of the electrode for semiconductor devices according to any one of claims 1-4.

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