Light source module for uv curing and method of manufacture

Abstract

The application discloses a light source module applied to UV curing and a manufacturing method, the light source module applied to UV curing comprises a substrate and a wafer, the substrate comprises a main body and first and second electrodes which are arranged on the main body at intervals; the wafer comprises a third electrode and a plurality of dies which are arranged on the third electrode at intervals, each die comprises a fourth electrode and a light emitting structure which are electrically connected to each other, the third electrode is electrically connected to the light emitting structure, one side of the third electrode, which is away from the light emitting structure, is electrically connected to the first electrode, each fourth electrode is electrically connected to the second electrode, the die is a vertical structure, the third electrode and the fourth electrode are arranged on opposite sides of the light emitting structure respectively, each fourth electrode comprises a sub-electrode and at least two metal pieces which are arranged on one side of the sub-electrode at intervals, the sub-electrode is connected to the light emitting structure, so that the die is connected to the second electrode through the metal pieces. The dies are prepared into a wafer-level array mode, the die density per unit area is increased, and the output light power density is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor lighting, and in particular to a light source module used for UV curing and a manufacturing method thereof. Background Art

[0002] UV (Ultraviolet) curing applications require a light source to provide sufficient energy within a specific illumination time to cure the material. The amount of energy provided by the light source within a specific time period is primarily influenced by the light source's wavelength, optical power, and optical power density per unit area. There are two ways to increase optical power density per unit area: increasing the light source's power or increasing the light source density. Currently, UV chip technology is still in its early stages of development, with insufficient photoelectric conversion efficiency. Therefore, increasing light source density is a common approach.

[0003] Currently, the main LED packaging structures used for UV curing mostly adopt the following two packaging methods: Method 1, using a ceramic substrate to package the lamp beads densely. Method 2, using wafer COB (Chip On Board) packaging, the wafers are densely arranged inside the substrate. If the light source density is to be increased using method 1 packaging, it will be affected by the size of the packaging substrate. If the light source density is to be increased using method 2 packaging, the density of the grains will be affected by the die bonding accuracy and wire bonding process. Therefore, the above two packaging methods have their limitations, which restrict the improvement of light source density. Summary of the Invention

[0004] The main purpose of the present invention is to provide a light source module for UV curing and a manufacturing method thereof, aiming to solve the technical problem of low light source density in the prior art.

[0005] In order to achieve the above object, the present invention provides a light source module for UV curing, wherein the light source module for UV curing comprises:

[0006] a substrate comprising a main body and a first electrode and a second electrode spaced apart from each other on the main body;

[0007] A wafer, comprising a third electrode and a plurality of crystal grains spaced apart on the third electrode, each of the crystal grains comprising a fourth electrode and a light-emitting structure electrically connected to each other, the third electrode being electrically connected to the light-emitting structure, the side of the third electrode facing away from the light-emitting structure being electrically connected to the first electrode, and each of the fourth electrodes being electrically connected to the second electrode; the crystal grains being a vertical structure, the third electrode and the fourth electrode being respectively disposed on opposite sides of the light-emitting structure, each of the fourth electrodes comprising a sub-electrode and at least two metal parts spaced apart on one side of the sub-electrode, the sub-electrode being connected to the light-emitting structure so that the crystal grains are connected to the second electrode through the metal parts.

[0008] In one embodiment, a plurality of the grains form a plurality of grain groups, the plurality of grain groups are spaced apart along a first direction, the grains in each grain group are spaced apart along a second direction perpendicular to the first direction, each grain includes two metal parts, the two metal parts are a first metal part and a second metal part respectively, and between any two adjacent grains in the same grain group, the first metal part of one of the grains and the second metal part of the other grain are respectively connected by welding wires, and the first metal part of the grain arranged near the second electrode is connected to the second electrode by the welding wire, so that the grains in each grain group are all arranged in parallel.

[0009] In one embodiment, the first metal member and the second metal member on the same die are both spaced apart from the edge of the sub-electrode by a preset distance, and the first metal member and the second metal member are spaced apart along the second direction.

[0010] In one embodiment, the second electrode includes a plurality of branch electrodes, each of the branch electrodes is disposed corresponding to at least one of the die groups, and each of the branch electrodes is electrically connected to the corresponding die group.

[0011] In one embodiment, the sizes of the grains in the same grain group are the same, and the sizes of the grains disposed near the edge of the substrate are not smaller than the sizes of the grains disposed near the middle of the substrate.

[0012] In one embodiment, the sizes of the grains in the same grain group are the same, and the size of the grains disposed near the edge of the substrate is not larger than the size of the grains disposed near the middle of the substrate.

[0013] In one embodiment, the light emitting structure is tapered from the top of the light emitting structure to the bottom of the light emitting structure.

[0014] In one embodiment, the sizes of the grains are the same.

[0015] In one embodiment, the light source module for UV curing further includes a transient suppression diode, which is mounted on the substrate and electrically connected to the second electrode; and / or, the light source module for UV curing further includes a temperature feedback control module, which includes a thermistor, and the thermistor is mounted on the substrate.

[0016] In addition, the present invention also provides a method for manufacturing a light source module for UV curing, the method for manufacturing a light source module for UV curing comprising the following steps:

[0017] providing a wafer;

[0018] Cutting one side of the wafer along a preset trajectory to form a plurality of spaced-apart grains; a distance between any two adjacent grains along a first direction is 20 μm to 100 μm, and a distance between any two adjacent grains along a second direction perpendicular to the first direction is 20 μm to 100 μm; forming a third electrode on an uncut side of the wafer, and the plurality of grains are respectively connected to the third electrode;

[0019] Mounting the cut wafer on a substrate, wherein a first electrode and a second electrode are provided on the substrate in an interval;

[0020] The first electrode is electrically connected to the third electrode, and the second electrode is electrically connected to the crystal grain.

[0021] In the above technical solution of the present invention, a wafer is cut to form multiple dies on one side of its surface, while the wafer body is not cut. That is, each dies is connected to each other via a third electrode, which is electrically connected to a first electrode located on a substrate. The third electrode is usually welded to the first electrode, and the fourth electrode of each dies is electrically connected to the second electrode. Thus, the dies can emit light by energizing the first and second electrodes. By cutting the dies on one side of the wafer, compared to cutting the wafer into multiple independent dies and then mounting the dies on the substrate, cutting the dies on one side of the wafer is not affected by the die bonding accuracy. Therefore, the distance between the dies is smaller than the distance between the dies in COB packaging, and the number of dies per unit area is greater, thus increasing the light source density. At the same time, compared to ceramic substrate packaging, the present invention uses a common third electrode for each dies to connect to the first electrode of the substrate, that is, each dies share a substrate. Therefore, it is not affected by the size of the substrate corresponding to the individual dies. Therefore, the distance between the dies can be reduced, thereby achieving a greater light source density. The grains are prepared into a wafer-level array pattern, which increases the density of grains per unit area and improves the output optical power density. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0023] Figure 1 This is a schematic structural diagram of a first embodiment of a light source module for UV curing according to the present invention;

[0024] Figure 2 This is a schematic structural diagram of a wafer of a first embodiment of a light source module for UV curing according to the present invention;

[0025] Figure 3 for Figure 2 A local enlarged schematic diagram at point A;

[0026] Figure 4 This is a schematic diagram of a portion of the structure of a wafer according to an embodiment of the present invention;

[0027] Figure 5 This is a schematic structural diagram of a second embodiment of a light source module for UV curing according to the present invention;

[0028] Figure 6 for Figure 5 Light distribution diagram at the longitudinal interface at B;

[0029] Figure 7 This is a schematic structural diagram of a third embodiment of a light source module for UV curing according to the present invention;

[0030] Figure 8 for Figure 7 Light distribution diagram at the longitudinal interface at C;

[0031] Figure 9 This is a schematic structural diagram of a fourth embodiment of a light source module for UV curing according to the present invention;

[0032] Figure 10 The figure is a flow chart of a method for manufacturing a light source module for UV curing according to an embodiment of the present invention.

[0033] Description of Figure Numbers:

[0034]

[0035] The realization of the objectives, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0037] It should be noted that all directional indications (such as up, down, front, back, left, and right) in the embodiments of the present invention are only used to explain the direction of the movement in a specific posture (such as the attached image). Figure 1 and attached Figure 4The relative position relationship and movement conditions of the components below are shown. If the specific posture changes, the directional indication will also change accordingly.

[0038] In addition, the terms "first," "second," and so on, used in this disclosure are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include at least one of these features.

[0039] Moreover, the technical solutions between the various embodiments of the present invention can be combined with each other, but this must be based on the fact that ordinary technicians in this field can implement them. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0040] The present invention provides a light source module 1 for UV curing, such as Figure 1 and Figure 4 As shown, the light source module 1 used for UV curing includes a substrate 10 and a wafer 20, the substrate 10 includes a main body and a first electrode 11 and a second electrode 12 spaced apart on the main body; the wafer 20 includes a third electrode 21 and a plurality of crystal grains 22 spaced apart on the third electrode 21, each crystal grain 22 includes a fourth electrode 224 and a light-emitting structure 220 electrically connected to each other, the third electrode 21 is electrically connected to the light-emitting structure 220, the side of the third electrode 21 facing away from the light-emitting structure 220 is electrically connected to the first electrode 11, and each fourth electrode 224 is electrically connected to the second electrode 12; the crystal grain 22 is a vertical structure, the third electrode 21 and the fourth electrode 224 are respectively arranged on opposite sides of the light-emitting structure 220, each fourth electrode 224 includes a sub-electrode 225 and at least two metal parts 226 spaced apart on one side of the sub-electrode 225, the sub-electrode 225 is connected to the light-emitting structure 220, so that the crystal grain 22 is connected to the second electrode 12 through the metal part 226.

[0041] It should be noted that the light source module 1 for UV curing is particularly suitable for installation and use as an ultraviolet curing light source device, but is not limited to installation and use as an ultraviolet curing light source device. If other equipment uses the light source module 1 for UV curing provided by the present invention, it should also fall within the scope of protection of the present invention.

[0042] Among them, the wafer 20 is cut to form multiple grains 22 on the surface of one side thereof, and the wafer 20 body is not cut off, that is, each grain 22 is connected through the third electrode 21, the third electrode 21 is electrically connected to the first electrode 11 located on the substrate 10, and the fourth electrode 224 of each grain 22 is electrically connected to the second electrode 12, so that the grain 22 can be made to emit light by energizing the first electrode 11 and the second electrode 12. By cutting on one side of the wafer 20 to form multiple grains 22, compared with cutting the wafer 20 into multiple independent grains 22 and then mounting the grains 22 on the substrate 10, cutting on one side of the wafer 20 to form multiple grains 22 will not be affected by the precision of the solid crystal, so the distance between the grains 22 is smaller than the distance between the grains 22 using COB packaging, the number of grains 22 per unit area is greater, and therefore the light source density is also greater. At the same time, compared to the packaging using a ceramic substrate 10, the present application connects the first electrode 11 of the substrate 10 through a common third electrode 21 of each grain 22, that is, each grain 22 shares a substrate 10, and therefore will not be affected by the size of the respective substrates 10 corresponding to the individual independent grains 22, so a greater light source density can be obtained by reducing the distance between each grain 22. It should be noted that the substrate 10 can be made of metal or ceramic material. It should also be noted that the grain 22 is a vertical structure, and the vertical structure of the grain 22 has better heat dissipation than the grain 22 of the upright structure. At the same time, since the third electrode 21 and the fourth electrode 224 are respectively located on the upper and lower sides of the grain 22, the current distribution is more uniform, avoiding local high temperature, and further improving the reliability of the grain 22; at least two metal parts 226 are added, and each metal part 226 has the same polarity, which is conducive to the expansion of the current.

[0043] According to the first embodiment of the present invention, Figure 1 As shown, the sizes of the grains 22 are the same. Generally, this embodiment is preferred for processing, as the process is simple and easy to process.

[0044] like Figures 1 to 3As shown, a plurality of interconnected grooves 70 are provided on a side of the third electrode 21 facing away from the first electrode 11. The grooves 70 are located between any two adjacent grains 22. An insulating layer is provided on the groove walls 70 and the sidewalls of the grains 22. The grooves 70 extending along the first direction have a width d2 ranging from 20 μm to 100 μm, and the grooves 70 extending along the second direction have a width d1 ranging from 20 μm to 100 μm. The groove widths of the grooves 70 extending along the first direction and the groove widths of the grooves 70 extending along the second direction can be the same or different. If the groove width is too small, less than 20 μm, subsequent filling and coating processes will be difficult. If the groove width is too large, greater than 100 μm, the optical power density will be reduced. Groove 70 is a V-shaped groove, which facilitates subsequent coating and filling processes while preventing the entire die 22 from fracturing. Groove 70 has a depth d3 ranging from 10 μm to 50 μm. A depth less than 10 μm can easily cause leakage in the die 22, while a depth greater than 50 μm can easily cause the wafer 20 to break. The insulating layer is made of an insulating material such as silicon dioxide, or a resin material mixed with a reflective material such as titanium dioxide. The insulating layer on the sidewalls of the die 22 can also be a DBR (distributed Bragg reflection) reflective layer composed of a silicon oxide and titanium oxide superlattice structure to prevent optical interference between the die 22. Among them, the thickness of the third electrode 21 is 200μm~300μm. If it is too small, it is easy to break. If it is too large, it will reduce the thermal conductivity of the grain 22 and affect the heat dissipation effect. Usually, the depth d3 of the groove 70 is 1 / 10~1 / 5 of the thickness of the third electrode 21. If it is less than 1 / 10, it is easy to cause leakage of the grain 22. If it is greater than 1 / 5, the wafer 20 is easy to break, reducing the yield rate.

[0045] like Figure 4As shown, the light-emitting structure 220 includes a first semiconductor layer 221, an active layer 222, and a second semiconductor layer 223 stacked in sequence. The first semiconductor layer 221 is connected to the third electrode 21, and the second semiconductor layer 223 is connected to the fourth electrode 224. The first semiconductor layer 221 can be an n-type semiconductor layer doped with n-type dopants such as Si, Ge, Sn, Se, and Te, and the second semiconductor layer 223 can be a p-type semiconductor layer doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba. It should be noted that the active layer 222 can be at least one semiconductor containing a compound of a III-V group element or a II-VI group element. For example, the active layer 222 can include at least one of InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, and InP / GaAs. The active layer 222 has a porous structure.

[0046] like Figure 2 As shown, multiple grains 22 form multiple groups of grain groups 30, and the multiple groups of grain groups 30 are spaced apart along a first direction. The grains 22 in each grain group 30 are spaced apart along a second direction perpendicular to the first direction. Each grain 22 includes two metal parts 226, which are a first metal part 227 and a second metal part 228. Any two adjacent grains 22 in the same grain group 30 are connected to each other by a welding wire 60. The first metal part 227 of the grain 22 disposed near the second electrode 12 is connected to the second electrode 12 by a welding wire 60. Figure 1 The front and rear directions shown are Figure 1 In the left and right directions shown, adjacent dies 22 in the same die group 30 are connected by welding wires 60. Because the welding wires 60 are thin and cannot withstand the pressure of welding, a first metal member 227 and a second metal member 228 are provided as supports to improve the reliability of the connection between adjacent dies 22. It should be noted that the length of the first electrode 11 extending along the first direction is 1 to 1.1 times the length of the third electrode 21 extending along the first direction, and the length of the first electrode 11 extending along the second direction is 1 to 1.1 times the length of the third electrode 21 extending along the second direction. If this ratio is less than or equal to 1, it is easy to cause poor welding of the third electrode 21. If it is greater than 1.1, it will cause a decrease in light extraction efficiency. The edge of the first electrode 11 near the second electrode 12 and the edge of the second electrode 12 near the first electrode 11 are 120μm to 200μm apart. If it is less than 120μm, it is not conducive to electrode circuit production. If it is greater than 200μm, the distance from the dies 22 to the second electrode 12 will be too long, thereby affecting its reliability.

[0047] The dies 22 in each die group 30 are connected in parallel. By connecting the dies 22 in each die group 30 in parallel, the driving voltage of each die 22 is effectively controlled, thereby achieving low-voltage, high-current control of the die 22 and preventing risks such as voltage breakdown and human injury caused by high-voltage driving.

[0048] like Figure 3 As shown, the first metal member 227 and the second metal member 228 on the same die 22 are both spaced a preset distance from the edge of the sub-electrode 225, and the first metal member 227 and the second metal member 228 are spaced apart along the second direction. The first metal member 227 and the second metal member 228 are both spaced a preset distance from the edge of the sub-electrode 225, and the preset distance length is d4, which ranges from 5μm to 20μm. If d4 is less than 5μm, the metal member 226 is too close to the edge of the sub-electrode 225, which may cause leakage. If d4 is greater than 20μm, the distance between the bonding wires 60 between the die 22 is too long, and the bonding wires 60 lack support. At the same time, because the first metal member 227 and the second metal member 228 are far from the edge, the first metal sheet and the second metal sheet are closer to the center of the die 22, which affects light emission and reduces the light extraction rate of the single die 22.

[0049] like Figure 5 and Figure 7 As shown, the second electrode 12 includes a plurality of branch electrodes 121, each branch electrode 121 being provided corresponding to at least one die group 30, and each branch electrode 121 being electrically connected to the corresponding die group 30. The second electrode 12 is divided into a plurality of branch electrodes 121, thereby achieving separate control of the plurality of die groups 30.

[0050] According to the second embodiment of the present invention, Figure 5 and Figure 6As shown, the size of each grain 22 in the same grain group 30 is the same, and the size of the grain 22 set near the edge of the substrate 10 is not less than the size of the grain 22 set near the middle of the substrate 10. The area of ​​the grains 22 set near the two sides of the substrate 10 is larger than the area of ​​the grains 22 set near the middle of the substrate 10. The area of ​​the grains 22 can be set in a decreasing manner from the two sides of the substrate 10 to the middle of the substrate 10, or the area of ​​the grains 22 set near the two sides of the substrate 10 can be 1.5 to 10 times the area of ​​the grains 22 near the middle of the substrate 10. The ratio of the area of ​​the grains 22 near the two sides of the substrate 10 to the area of ​​the grains 22 near the middle of the substrate 10 is preferably 4:1 or 10:6:4:1. It should be noted that since the grains 22 are different in area, the current controlling their operation is also different, so multiple branch electrodes 121 are required to achieve separate control of the grain group 30. Through such a setting, its light distribution is as follows Figure 6 As shown, the optical power density at both ends of the wafer 20 can be made close to the optical power density at the center, thereby obtaining a plane with uniform light intensity distribution, thereby having a relatively uniform optical power distribution on the entire irradiation surface.

[0051] According to the third embodiment of the present invention, Figure 7 and Figure 8 As shown, the size of each grain 22 in the same grain group 30 is the same, and the size of the grain 22 set near the edge of the substrate 10 is not larger than the size of the grain 22 set near the middle of the substrate 10. The area of ​​the grains 22 set near the two sides of the substrate 10 is smaller than the area of ​​the grains 22 set near the middle of the substrate 10. The area of ​​the grains 22 can be set in an increasing manner from the two sides of the substrate 10 to the middle of the substrate 10, or the area of ​​the grains 22 near the middle of the substrate 10 can be 1.5 to 10 times the area of ​​the grains 22 set near the two sides of the substrate 10. The ratio of the area of ​​the grains 22 near the middle of the substrate 10 to the area of ​​the grains 22 near the two sides of the substrate 10 is preferably 4:1 or 10:6:4:1. By setting it in this way, the light distribution is as follows Figure 8 As shown, the light intensity is concentrated in the middle line area of ​​the module, so it can adapt to applications that require highly concentrated light power density, such as line scanning applications.

[0052] According to another embodiment of the present invention, the sizes of the grains 22 in the same grain group 30 are the same, and the sizes of the grains 22 in different grain groups 30 are also the same, so the manufacturing process is simple and easy to process.

[0053] According to a fourth embodiment of the present invention, Figure 9As shown, the light-emitting structure 220 is arranged to taper from the top of the light-emitting structure 220 to the bottom of the light-emitting structure 220. The light-emitting structure 220 is arranged to taper from top to bottom, and the sidewall of the light-emitting structure 220 forms an angle θ with the top surface of the light-emitting structure 220, wherein 75°<θ<85°. According to a preferred embodiment of the present invention, θ=82.5°. Through this arrangement, the space between two adjacent grains 22 is gradually expanded from top to bottom, thereby reducing the risk of leakage. At the same time, it is also beneficial for light to be reflected and emitted from above the grains 22, thereby improving light extraction efficiency. If θ is less than 75°, the light power of the light-emitting structure 220 will be reduced. If θ is greater than 85°, the sidewall of the light-emitting structure 220 is close to perpendicular to the top surface, and the effect of improving light extraction efficiency is not obvious.

[0054] like Figure 1 As shown, the light source module 1 for UV curing further includes a transient suppressor diode 40, which is mounted on the substrate 10 and electrically connected to the second electrode 12; and / or the light source module 1 for UV curing further includes a temperature feedback control module, which includes a thermistor 50, which is mounted on the substrate 10. The provision of the transient suppressor diode 40 effectively protects the circuit. The circuit of the temperature feedback control module is separated from the operating circuit of the die 22 and is independently controlled. By mounting the thermistor 50 on the substrate 10, it is used to provide temperature feedback control during the operation of the die 22.

[0055] In addition, the light source module 1 used for UV curing also includes a first packaging film and a second packaging film. The first packaging film cover is arranged above the first electrode 11, the second electrode 12 and the wafer 20, and the second packaging film cover is arranged above the transient suppression diode 40 and the temperature feedback control module to protect the device. The first packaging film can be a planar structure or an arched structure that bulges away from the substrate 10.

[0056] Furthermore, the dimensions of wafer 20 and die 22 extending along the first direction are no greater than their dimensions extending along the second direction. The dimensions of wafer 20 extending along the first direction are between 5 mm and 150 mm, and the dimensions of wafer 20 extending along the second direction are between 10 mm and 200 mm. The ratio of the dimensions of wafer 20 extending along the first direction to the dimensions of wafer 20 extending along the second direction is between 1:2 and 1:20. A too small ratio will not enhance the optical power in the concentrated area, while a too large ratio will easily cause excessive stress within the chip, resulting in deformation and thus affecting the reliability of die 22. It should be noted that there are at least three die groups 30, and each die group 30 contains at least four die 22.

[0057] In addition, the present invention also provides a method for manufacturing a light source module 1 for UV curing, and the method for manufacturing a light source module 1 for UV curing comprises the following steps:

[0058] S10, providing a wafer 20;

[0059] S20, cutting one side of the wafer 20 along a preset trajectory to form a plurality of crystal grains 22 spaced apart from each other; forming a third electrode 21 on the uncut side of the wafer 20, and the plurality of crystal grains 22 are respectively connected to the third electrode 21;

[0060] The preset trajectory here can be a program stored or edited in the device software in advance according to actual needs. By cutting one side of the surface of the wafer 20 to form multiple grains 22, the uncut side forms the third electrode 21. Compared with cutting the wafer 20 into multiple independent grains 22 and then mounting the grains 22 on the substrate 10, cutting one side of the surface of the wafer 20 to form multiple grains 22 will not be affected by the precision of the solid crystal. Therefore, the distance between the grains 22 is smaller than the distance between the grains 22 using COB packaging. The number of grains 22 per unit area is greater, so the light source density is also greater. The cut grains 22 and the third electrode 21 are an integrally formed part, that is, there is no need to install the grains 22 one by one. Instead, the entire processed wafer 20 can be directly mounted to achieve electrical connection between all the grains 22 on the wafer 20 and the substrate 10.

[0061] S30, mounting the cut wafer 20 on a substrate 10, wherein the substrate 10 is provided with a first electrode 11 and a second electrode 12 at intervals;

[0062] The length of the first electrode 11 is 1 to 1.1 times the length of the third electrode 21 , and the width of the first electrode 11 is 1 to 1.1 times the width of the third electrode 21 . If this ratio is too small, it may easily cause poor welding of the third electrode 21 , while if it is too large, it may cause a decrease in light extraction efficiency.

[0063] S40 , electrically connecting the first electrode 11 to the third electrode 21 , and electrically connecting the second electrode 12 to the crystal grain 22 .

[0064] Typically, the third electrode 21 is welded to the first electrode 11 , and the second electrode 12 is electrically connected to the die 22 via a welding wire 60 .

[0065] In the above-described embodiment of the present invention, multiple dies 22 are formed by cutting a side surface of a wafer 20. The multiple dies 22 and the third electrode 21 form an integrally formed part. Compared to cutting the wafer 20 into multiple independent dies 22 and then mounting the dies 22 on the substrate 10, cutting a side surface of the wafer 20 to form multiple dies 22 is not affected by the die bonding accuracy. Therefore, the distance between the dies 22 is smaller than the distance between the dies 22 using COB packaging. The number of dies 22 per unit area is greater, and thus the light source density is also greater. At the same time, compared to packaging using a ceramic substrate 10, the present application connects the dies 22 to the first electrode 11 of the substrate 10 by sharing a third electrode 21, that is, each dies 22 shares a substrate 10. Therefore, it is not affected by the size of the substrate 10 corresponding to each individual dies 22. Therefore, a greater light source density can be achieved by reducing the distance between the dies 22.

[0066] According to the first embodiment of the present invention, the grains 22 formed after the wafer 20 is cut along the preset trajectory have the same size. The grains 22 are processed by this method, and the process is simple and easy to process.

[0067] According to the second embodiment of the present invention, the die 22 formed after the wafer 20 is cut according to the preset trajectory, the size of each die 22 in the same die group 30 is the same, and the size of the die 22 arranged near the edge of the substrate 10 is not smaller than the size of the die 22 arranged near the middle of the substrate 10. By setting it in this way, the light distribution is as follows Figure 6 As shown, a plane with uniform light intensity distribution can be obtained, thereby having a relatively uniform light power distribution on the entire irradiation surface.

[0068] According to the third embodiment of the present invention, the dies 22 formed after the wafer 20 is cut according to the preset trajectory are all the same size in the same die group 30. The size of the dies 22 arranged near the edge of the substrate 10 is not larger than the size of the dies 22 arranged near the middle of the substrate 10. With this arrangement, the light distribution is as follows: Figure 8 As shown, the light intensity is concentrated in the middle area, which can adapt to the situation where a stronger line light source power density is required.

[0069] According to the fourth embodiment of the present invention, the die 22 is formed after the wafer 20 is cut according to a preset trajectory, and the light-emitting structure 220 of the die 22 is cut into a structure that gradually decreases from the top of the light-emitting structure 220 to the bottom of the light-emitting structure 220, so that the light-emitting structure 220 is arranged to be reduced from top to bottom, and the side wall of the light-emitting structure 220 forms an angle θ with the top surface of the light-emitting structure 220, 75°<θ<85°, according to a preferred embodiment of the present invention, θ=82.5°. The size of the angle θ after cutting is controlled in order to reduce the risk of leakage, and it is also beneficial for the light to be emitted from the top of the die 22 after being reflected, thereby improving the light extraction efficiency.

[0070] The above are only preferred embodiments of the present invention and do not limit the patent scope of the present invention. All equivalent structural transformations made based on the contents of the present invention's description and drawings, or direct / indirect applications in other related technical fields within the concept of the present invention are included in the patent protection scope of the present invention.

Claims

1. A light source module for UV curing, characterized in that: include: a substrate comprising a main body and a first electrode and a second electrode spaced apart from each other on the main body; A wafer, the wafer comprising a third electrode and a plurality of crystal grains spaced apart on the third electrode, each of the crystal grains comprising a fourth electrode and a light-emitting structure electrically connected to each other, the third electrode being electrically connected to the light-emitting structure, a side of the third electrode facing away from the light-emitting structure being electrically connected to the first electrode, and each of the fourth electrodes being electrically connected to the second electrode; the crystal grains having a vertical structure, the third electrode and the fourth electrode being respectively disposed on opposite sides of the light-emitting structure, each of the fourth electrodes comprising a sub-electrode and at least two metal members spaced apart on one side of the sub-electrode, the sub-electrode being connected to the light-emitting structure so that the crystal grains are connected to the second electrode through the metal members; Multiple grains form multiple grain groups, and the multiple grain groups are spaced apart along a first direction. The grains in each grain group are spaced apart along a second direction perpendicular to the first direction. Each grain includes two metal parts, and the two metal parts are a first metal part and a second metal part respectively. Between any two adjacent grains in the same grain group, the first metal part of one of the grains and the second metal part of the other grain are connected by welding wires. The first metal part of the grain arranged near the second electrode is connected to the second electrode by the welding wire, so that the grains in each grain group are all arranged in parallel.

2. The light source module for UV curing according to claim 1, characterized in that: The first metal member and the second metal member on the same die are both spaced apart from the edge of the sub-electrode by a preset distance, and the first metal member and the second metal member are spaced apart along the second direction.

3. The light source module for UV curing according to claim 1, characterized in that: The second electrode includes a plurality of branch electrodes, each of the branch electrodes is disposed corresponding to at least one of the die groups, and each of the branch electrodes is electrically connected to the corresponding die group.

4. The light source module for UV curing according to claim 1, characterized in that: The sizes of the grains in the same grain group are the same, and the sizes of the grains arranged near the edge of the substrate are not smaller than the sizes of the grains arranged near the middle of the substrate.

5. The light source module for UV curing according to claim 1, characterized in that: The sizes of the grains in the same grain group are all the same, and the sizes of the grains arranged near the edge of the substrate are not larger than the sizes of the grains arranged near the middle of the substrate.

6. The light source module for UV curing according to claim 1, characterized in that: The light emitting structure is arranged to be tapered from the top of the light emitting structure to the bottom of the light emitting structure.

7. The light source module for UV curing according to claim 1, characterized in that: The grain sizes are all the same.

8. The light source module for UV curing according to any one of claims 1 to 7, characterized in that: The light source module for UV curing further includes a transient suppression diode, which is mounted on the substrate and electrically connected to the second electrode; and / or, the light source module for UV curing further includes a temperature feedback control module, which includes a thermistor, which is mounted on the substrate.

9. A method for manufacturing a light source module for UV curing, characterized in that: The method for manufacturing a light source module for UV curing is used to manufacture the light source module for UV curing according to any one of claims 1 to 8, and the method for manufacturing a light source module for UV curing comprises the following steps: providing a wafer; Cutting one side of the wafer according to a preset trajectory to form a plurality of crystal grains spaced apart; forming a third electrode on the uncut side of the wafer, and the plurality of crystal grains are respectively connected to the third electrode; Mounting the cut wafer on a substrate, wherein a first electrode and a second electrode are provided on the substrate in an interval; The first electrode is electrically connected to the third electrode, and the second electrode is electrically connected to the crystal grain.

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