A PCB+laminated DBC hybrid package half-bridge power module

Abstract

The invention discloses a PCB+laminated DBC hybrid package half-bridge power module, comprising an upper and lower DBC substrate, a power unit and a PCB board with a window. The upper surface metal layer of the upper DBC substrate comprises a positive metal layer and an output metal layer; the upper surface metal layer of the lower DBC substrate is a negative metal layer, and the central part of the upper surface of the lower DBC substrate is welded together with the lower surface of the upper DBC substrate, and the surrounding part is welded together with the lower pad of the PCB board; the power unit is a half-bridge circuit structure, including an upper half bridge arm switch tube, an upper half bridge arm diode, a lower half bridge arm switch tube and a lower half bridge arm diode; the PCB board comprises an upper pad and a lower pad, and its window is used to embed the power unit. In the power circuit, a multi-layer commutation circuit is used to achieve mutual inductance cancellation, thereby reducing the parasitic inductance inside the module; the middle copper layer of the laminated DBC forms a shielding effect between the top copper layer and the bottom copper layer, thereby achieving complete shielding between the output copper layer and the bottom copper layer, thereby achieving extremely low parasitic capacitance.

Description

Technical Field

[0001] The present invention belongs to the technical field of power semiconductor devices, and more specifically, relates to a PCB+laminated DBC hybrid package half-bridge power module. Background Art

[0002] The rapidly developing power electronics technology plays an important role in today's industrial field. The rise of my country's power electronics industry has made power semiconductor modules widely used in the fields of new energy generation, transportation, etc., and at the same time put forward higher requirements for power modules such as high efficiency and high power density.

[0003] For power modules, the traditional module packaging process will make the parasitic parameters inside the power module larger. The parasitic inductance will cause a large voltage overshoot when the power electronic power device is switched at high speed. This voltage overshoot will generate a large electromagnetic interference noise in the external circuit, while increasing the risk of power device breakdown, limiting the switching speed of the power electronic power module; parasitic capacitance forms a ground loop for the conduction of common-mode electromagnetic interference in the circuit, increasing the amplitude of common-mode interference; at the same time, there is a mutual constraint relationship between parasitic capacitance and parasitic inductance, and the optimization of parasitic capacitance will increase the parasitic inductance. The existing various new SiC packaging structures often only focus on single targets such as parasitic capacitance, parasitic inductance or thermal resistance, lacking quantitative comparison of comprehensive performance. For the existing packaging optimization of power modules, the internal flow performance of the hybrid packaging module is reduced due to the PCB window opening and the pad layout for easy welding, which brings parasitic inductance problems. Further optimization is needed to reduce the overvoltage and oscillation problems caused by opening and closing. The use of shielding structure can reduce the module's capacitance to ground to a certain extent, but there is still a lot of room for optimization. The capacitance of the conductor layer inside the module to ground is further reduced to reduce the impact of common-mode electromagnetic interference. More importantly, it is necessary to comprehensively optimize the parasitic parameters of the module and further design a new packaging structure to achieve high frequency and high power density of the entire power electronic device and system. In the context of the widespread application of the third-generation new power semiconductor devices (wide bandgap semiconductor devices mainly based on SiC and GaN), a more urgent demand has been put forward for power module structures with high power density and low parasitic inductance. Summary of the invention

[0004] In response to the demand for improvement of existing semiconductor power modules, the present invention provides a PCB+laminated DBC hybrid package half-bridge power module, which aims to comprehensively optimize the parasitic capacitance and parasitic inductance inside the module, design an optimal hybrid package structure, weld two DBC substrates to form a "copper-ceramic-copper-ceramic-copper" laminated structure, and make the module and the PCB board highly integrated through the hybrid package structure, avoiding the parasitic inductance introduced by the power terminal; the top copper layer and the middle copper layer can form a commutation loop with mutual inductance cancellation effect, which is used to reduce the parasitic inductance; while the PCB window is opened for welding the power unit, the integrity of the conductive copper layer is achieved through the design layout, avoiding the parasitic inductance caused by the through-current problem; in addition, the power unit is placed on the upper surface metal layer of the upper DBC substrate, and the middle copper layer of the laminated DBC forms a shielding effect between the top copper layer and the bottom copper layer, so that the output pole copper layer and the bottom copper layer are completely shielded, achieving extremely low parasitic capacitance; at the same time, the overall volume of the module is reduced through the compact chip layout.

[0005] To achieve the above object, the present invention provides a PCB+laminated DBC hybrid package half-bridge power module, comprising: an upper DBC substrate, a lower DBC substrate, a power unit and a PCB board with a window;

[0006] The upper surface metal layer of the upper DBC substrate includes: a positive electrode metal layer and an output electrode metal layer arranged in a transverse interval;

[0007] The metal layer on the upper surface of the lower DBC substrate is a negative electrode metal layer, and the central part of the upper surface of the lower DBC substrate is welded together with the lower surface of the upper DBC substrate, and the surrounding parts are welded together with the lower pad of the PCB board;

[0008] The power unit is a half-bridge circuit structure, comprising: an upper half-bridge arm switch tube and an upper half-bridge arm diode arranged longitudinally and spaced in sequence on the positive electrode metal layer, and a lower half-bridge arm switch tube and a lower half-bridge arm diode arranged longitudinally and spaced in sequence on the output electrode metal layer;

[0009] The PCB board includes an upper pad and a lower pad, and a window thereof is used to embed the power unit;

[0010] The upper pads include: positive pads and upper negative pads located on the left and right sides of the PCB board, and upper half bridge arm switch tube drive signal pads, upper half bridge arm switch tube drive signal loop pads, lower half bridge arm switch tube drive signal pads and lower half bridge arm switch tube drive signal loop pads arranged in sequence and laterally at intervals on the upper end of the PCB board, and an output pad located at the lower end of the PCB board;

[0011] The lower pad is a lower negative electrode pad, which is located on the back of the entire PCB board and is connected to the upper negative electrode pad via a via hole.

[0012] Furthermore, the upper DBC substrate and the lower DBC substrate are both three-layer structures, wherein the middle layer is an insulating material, and the upper and lower layers are both high-conductivity materials; and the area of ​​the upper DBC substrate is smaller than that of the lower DBC substrate.

[0013] Furthermore, the upper DBC substrate and the lower DBC substrate are welded to form a "copper-ceramic-copper-ceramic-copper" laminated structure, and the middle copper layer forms a shielding effect between the top copper layer and the bottom copper layer, thereby achieving complete shielding between the output copper layer and the bottom copper layer.

[0014] Furthermore, the positive electrode pad, the upper half bridge arm switch tube, the lower half bridge arm diode, the upper negative electrode pad, and the negative electrode metal layer constitute a commutation circuit of the half bridge branch; the positive electrode pad, the upper half bridge arm diode, the lower half bridge arm switch tube, the upper negative electrode pad, and the negative electrode metal layer constitute another commutation circuit of the half bridge branch.

[0015] Furthermore, the drain of the upper half bridge arm switch tube is connected to the positive electrode metal layer by welding, the gate and the first source are respectively connected to the upper half bridge arm switch tube drive signal pad and the upper half bridge arm switch tube drive signal loop pad by bonding wires, and the first source and the second source are respectively connected to the output electrode metal layer by bonding wires;

[0016] The bottom electrode of the upper half bridge arm diode is connected to the positive electrode metal layer by welding, and the top electrode is connected to the output electrode metal layer by a bonding wire;

[0017] The drain of the lower half bridge arm switch tube is connected to the output electrode metal layer by welding, the gate and the first source are respectively connected to the lower half bridge arm switch tube drive signal pad and the lower half bridge arm switch tube drive signal loop pad by bonding wires, and the first source and the second source are respectively connected to the upper layer negative electrode pad by bonding wires;

[0018] The bottom electrode of the lower half bridge arm diode is connected to the output electrode metal layer by welding, and the top electrode is connected to the upper layer negative electrode pad by a bonding wire.

[0019] Furthermore, the driving of the upper bridge arm switch tube and the lower bridge arm switch tube both adopts a Kelvin connection method.

[0020] Furthermore, the positive electrode metal layer is connected to the positive electrode pad via a bonding wire, and the output electrode metal layer is connected to the output electrode pad via a bonding wire.

[0021] In general, the above technical solutions conceived by the present invention can achieve the following beneficial effects compared with the prior art:

[0022] (1) The hybrid package half-bridge power module provided by the present invention adopts a hybrid package structure based on PCB+DBC stacking to comprehensively optimize the parasitic inductance, parasitic capacitance and thermal resistance inside the module, directly integrate the power unit with the main circuit and the drive circuit, and reduce the parasitic inductance caused by the leads and power terminals inside the power module.

[0023] (2) The hybrid package half-bridge power module provided by the present invention uses a stacked DBC to achieve a multi-layer structure of "copper-ceramic-copper-ceramic-copper", so that the middle copper layer forms a shielding effect between the top copper layer and the bottom copper layer, and the output copper layer is completely shielded, thereby effectively achieving extremely low capacitance between the top copper layer and the bottom copper layer, suppressing the conduction of common-mode EMI in the conduction path, and further optimizing the electromagnetic compatibility performance of the module.

[0024] (3) The hybrid packaged half-bridge power module provided by the present invention reduces the overall size of the power module, improves the power density, realizes a shorter commutation loop, and reduces the parasitic inductance of the commutation loop inside the module by adopting a compact layout and a sequential arrangement of power units.

[0025] (4) The hybrid package half-bridge power module provided by the present invention ensures the integrity of the conductive copper layer while opening a window on the PCB, thereby achieving low current inductance; a commutation circuit with mutual inductance cancellation is adopted in the power circuit design, and a circuit with mutual inductance cancellation effect is formed in the top copper layer and the middle copper layer to reduce parasitic inductance. Its commutation path is: PCB positive electrode pad, to DBC positive electrode metal layer, to DBC output electrode metal layer, and then to the upper negative electrode pad of the PCB, through the via hole to the lower negative electrode pad of the PCB and the upper surface metal layer of the lower DBC substrate connected thereto. Through the layout, the current flow direction of the upper pad of the PCB and the upper surface metal layer of the upper DBC substrate connected thereto is opposite to that of the lower pad of the PCB and the upper surface metal layer of the lower DBC substrate connected thereto, thereby achieving mutual inductance cancellation, while ensuring the optimization of parasitic capacitance, effectively reducing the internal parasitic inductance of the module.

[0026] (5) The hybrid package half-bridge power module provided by the present invention adopts a Kelvin connection method at the drive signal connection of the power unit, which effectively reduces the common source inductance, thereby reducing the coupling effect between the drive circuit and the power circuit and improving the driving stability; a compact layout and a sequential arrangement of the power units are adopted, so that the pads of the power unit and the drive circuit of the PCB layer are close to each other, shortening the length of the bonding wire and reducing the parasitic inductance caused by the lead. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic diagram of the overall structure of the packaging structure of the PCB+laminated DBC hybrid packaging half-bridge power module provided by an embodiment of the present invention;

[0028] Figure 2 It is a schematic diagram of the overall structure of a PCB+laminated DBC hybrid package half-bridge power module provided by an embodiment of the present invention;

[0029] Figure 3 It is a schematic diagram of the overall structure of the PCB board in the PCB+laminated DBC hybrid package half-bridge power module provided by an embodiment of the present invention;

[0030] Figure 4 It is a schematic diagram of the back structure of the PCB board in the PCB+laminated DBC hybrid package half-bridge power module provided by an embodiment of the present invention;

[0031] Figure 5 It is a schematic diagram of the overall structure of the laminated DBC substrate in the PCB+laminated DBC hybrid package half-bridge power module provided by an embodiment of the present invention;

[0032] Figure 6 It is a schematic diagram of the overall structure of the upper DBC substrate of the PCB+laminated DBC hybrid package half-bridge power module provided by an embodiment of the present invention;

[0033] Figure 7 It is a schematic diagram of the overall structure of the lower DBC substrate of the PCB+laminated DBC hybrid package half-bridge power module provided by an embodiment of the present invention;

[0034] Figure 8 Schematic diagram of the half-bridge circuit topology corresponding to the PCB+laminated DBC hybrid package half-bridge power module provided in an embodiment of the present invention;

[0035] Throughout the drawings, the same reference numerals are used to denote the same elements or structures, wherein:

[0036] 1-positive electrode pad, 2-upper negative electrode pad, 3-output electrode pad, 4-upper half bridge arm switch tube drive signal pad, 5-upper half bridge arm switch tube drive signal loop pad, 6-lower half bridge arm switch tube drive signal pad, 7-lower half bridge arm switch tube drive signal loop pad, 8-via, 9-lower layer negative electrode pad, 10-positive electrode metal layer, 11-output electrode metal layer, 12-upper half bridge arm switch tube, 13-lower half bridge arm switch tube, 14-upper half bridge arm diode, 15-lower half bridge arm diode, 16-negative electrode metal layer, 17a to 17v-bonding wires. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0038] In the present invention, the terms "first", "second", etc. (if any) in the present invention and the accompanying drawings are used to distinguish similar objects but not necessarily to describe a specific order or sequence.

[0039] See also Figure 1 , combined with Figures 2 to 8 This embodiment proposes a PCB+laminated DBC hybrid package half-bridge power module. By adopting a hybrid packaging structure of laminated DBC and PCB, while ensuring the effective reduction of module parasitic capacitance, it also takes into account the optimization of parasitic inductance and thermal resistance; through the laminated DBC structure, the shielding effect of the middle copper layer after the DBC substrate is laminated is utilized to completely shield the output pole copper layer to achieve extremely low parasitic capacitance; through the hybrid packaging of PCB and DBC substrate, a commutation circuit with mutual inductance cancellation is realized, which effectively reduces the parasitic inductance inside the module; through reasonable design and optimization of the windowed PCB, the structural integrity of the conductive copper layer is guaranteed, the current flow performance is guaranteed, and the parasitic inductance value is further reduced; at the same time, the compact chip layout and sequential arrangement are combined to take into account the space utilization and drive circuit optimization; the Kelvin connection method is used in the drive circuit to reduce the common source inductance and improve the stability of the drive.

[0040] like Figure 1 , Figure 2 As shown, the PCB+laminated DBC hybrid package half-bridge power module provided in the embodiment of the present invention comprises an upper DBC substrate, a lower DBC substrate, a power unit and a PCB board with a window.

[0041] The upper DBC substrate includes an upper surface metal layer, an intermediate insulating layer and a lower surface metal layer, and the upper surface metal layer of the upper DBC substrate includes: a positive electrode metal layer 10 and an output electrode metal layer 11; the lower DBC substrate includes an upper surface metal layer, an intermediate insulating layer and a lower surface metal layer, and the upper surface metal layer of the lower DBC substrate is a negative electrode metal layer 16. The area of ​​the upper DBC substrate is smaller than that of the lower DBC substrate, and the central part of the upper surface of the lower DBC substrate is welded to the lower surface of the upper DBC substrate, and the surrounding parts are welded to the lower pads of the PCB board.

[0042] The power unit is a half-bridge circuit structure, including: an upper half bridge arm switch tube 12 and an upper half bridge arm diode 14 arranged longitudinally and spaced apart in sequence on the positive electrode metal layer 10, and a lower half bridge arm switch tube 13 and a lower half bridge arm diode 15 arranged longitudinally and spaced apart in sequence on the output electrode metal layer 11.

[0043] The PCB board includes an upper pad and a lower pad. The upper pad includes: a positive pad 1, an upper negative pad 2, an upper half bridge arm switch tube drive signal pad 4, an upper half bridge arm switch tube drive signal loop pad 5, a lower half bridge arm switch tube drive signal pad 6, a lower half bridge arm switch tube drive signal loop pad 7, and an output electrode pad 3; the lower pad is a lower negative pad 9, which is located on the back of the entire PCB board.

[0044] The metal layers, pads and chips inside the module are connected by bonding wires 17a to 17v. The bottom drain electrode of the upper half bridge arm switch tube 12 is connected to the positive metal layer 10 by welding, and the top gate electrode and source electrode are connected to the upper half bridge arm switch tube drive signal pad 4 and the upper half bridge arm switch tube drive signal loop pad 5 by bonding wires 17g and 17h respectively. The two source electrodes are connected to the output electrode metal layer 11 by bonding wires 17i and 17j respectively. The drive loop forms a Kelvin connection, which effectively reduces the influence of the common source inductance; the bottom electrode of the upper half bridge arm diode 14 is connected to the positive electrode metal layer 10 by welding, and the top electrode is connected to the output electrode metal layer 11 by bonding wires 17q and 17r; similarly, the lower half bridge arm switch tube 1 The bottom drain electrode of 3 is connected to the output electrode metal layer 11 by welding, and the top gate electrode and source electrode are respectively connected to the lower half bridge arm switch tube drive signal pad 6 and the lower half bridge arm switch tube drive signal loop pad 7 through bonding wires 17k and 17l, and the two source electrodes are respectively connected to the upper layer cathode pad 2 through bonding wires 17m and 17n; the bottom electrode of the lower half bridge arm diode 15 is connected to the output electrode metal layer 11 by welding, and the top electrode is connected to the upper layer cathode pad 2 through bonding wires 17o and 17p; the drive signal connection loop of the upper half bridge arm switch tube 12 and the lower half bridge arm switch tube 13 realizes the Kelvin connection mode, which effectively reduces the common source inductance. The overall structure of the module adopts a compact layout, and the upper bridge arm switch tube 12, the lower bridge arm switch tube 13, the upper bridge arm diode 14, and the lower bridge arm diode 15 are arranged in sequence, which are close to the upper bridge arm switch tube drive signal pad 4, the upper bridge arm switch tube drive signal loop pad 5, the lower bridge arm switch tube drive signal pad 6, and the lower bridge arm switch tube drive signal loop pad 7 of the PCB board, shortening the length of the bonding wires 17g, 17h, 17k, and 17l, and can effectively reduce the parasitic inductance caused by the leads.

[0045] like Figure 3 , Figure 4As shown, it is a schematic diagram of the overall structure of the PCB board and the back of the PCB board in the PCB+laminated DBC hybrid package half-bridge power module provided by an embodiment of the present invention. The central part of the PCB board is cut off, and the power unit is embedded in the cut-off part. The positive electrode pad 1 and the upper negative electrode pad 2 of the PCB are respectively located on the left and right sides of the front of the PCB, and the upper half bridge arm switch tube drive signal pad 4, the upper half bridge arm switch tube drive signal loop pad 5, the lower half bridge arm switch tube drive signal pad 6, and the lower half bridge arm switch tube drive signal loop pad 7 are arranged horizontally at the upper end of the PCB in sequence, and the output electrode pad 3 is located at the lower end of the PCB. The lower pad of the PCB is the lower negative electrode pad 9, which is located on the unhollowed part of the back of the entire PCB; the upper negative electrode pad 2 on the front of the PCB is connected to the lower negative electrode pad 9 on the back through a via 8. The pad copper layer of the PCB ensures the integrity of the structure, improves the flow capacity, and effectively achieves low parasitic inductance.

[0046] The first commutation circuit of the power module passes through the positive electrode pad 1, the upper bridge arm switch tube 12, the output electrode metal layer 11, the lower bridge arm diode 15, the upper negative electrode pad 2, the via 8, the lower negative electrode pad 9, the negative electrode metal layer 16 in sequence, and finally completes the circuit from the part of the lower negative electrode pad 9 located on the back of the positive electrode pad 1. The entire commutation circuit realizes the mutual inductance cancellation effect of the commutation circuit through the mixed packaging laminated structure, which effectively reduces the parasitic inductance of the commutation circuit.

[0047] Figures 5 to 7 It is a schematic diagram of the structure of the laminated DBC substrate as a whole, the upper DBC substrate as a whole, and the lower DBC substrate as a whole in the PCB+laminated DBC hybrid package half-bridge power module provided by the embodiment of the present invention; the positive metal layer 10 and the output metal layer 11 are arranged horizontally on the insulating layer of the upper DBC substrate in sequence; the upper surface metal layer of the lower DBC substrate is the negative metal layer 16, the central part of which is welded to the lower surface of the upper DBC substrate, and the surrounding parts are welded to the lower pad of the PCB board. The middle copper layer of the two-layer DBC substrate completely shields the output metal layer 11 from the lower copper layer to achieve an extremely low parasitic capacitance of less than 1pF.

[0048] Figure 8 Schematic diagram of the topology of a half-bridge circuit corresponding to a PCB+laminated DBC hybrid package half-bridge power module provided in an embodiment of the present invention. Figures 1 to 7 Correspondingly, it is composed of a positive electrode pad 1, an upper half bridge arm switch tube drive signal pad 4, an upper half bridge arm switch tube drive signal loop pad 5, a lower half bridge arm switch tube drive signal pad 6, a lower half bridge arm switch tube drive signal loop pad 7, an output electrode pad 3, a lower negative electrode pad 9, an upper half bridge arm switch tube 12 and an upper half bridge arm diode 14, a lower half bridge arm switch tube 13 and a lower half bridge arm diode 15, and electrical connections therebetween.

[0049] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A PCB+laminated DBC hybrid package half-bridge power module, characterized in that: include: Upper DBC substrate, lower DBC substrate, power unit and PCB board with window; The upper surface metal layer of the upper DBC substrate comprises: a positive electrode metal layer (10) and an output electrode metal layer (11) arranged in a transversely spaced relationship; The metal layer on the upper surface of the lower DBC substrate is a negative electrode metal layer (16), and the central portion of the upper surface of the lower DBC substrate is welded to the lower surface of the upper DBC substrate, and the surrounding portions are welded to the lower layer pads of the PCB board; The power unit is a half-bridge circuit structure, comprising: an upper half-bridge arm switch tube (12) and an upper half-bridge arm diode (14) arranged in sequence and in intervals longitudinally on the positive electrode metal layer (10), and a lower half-bridge arm switch tube (13) and a lower half-bridge arm diode (15) arranged in sequence and in intervals longitudinally on the output electrode metal layer (11); The PCB board comprises an upper pad and a lower pad, and a window thereof is used to embed the power unit; The upper layer pads include: positive electrode pads (1) and upper layer negative electrode pads (2) located on the left and right sides of the PCB board, upper half bridge arm switch tube drive signal pads (4), upper half bridge arm switch tube drive signal loop pads (5), lower half bridge arm switch tube drive signal pads (6) and lower half bridge arm switch tube drive signal loop pads (7) arranged in sequence and laterally at intervals at the upper end of the PCB board, and an output electrode pad (3) located at the lower end of the PCB board; The lower layer pad is a lower layer negative electrode pad (9), which is located on the back of the entire PCB board and is connected to the upper layer negative electrode pad (2) via a via hole (8).

2. The PCB+laminated DBC hybrid package half-bridge power module according to claim 1, characterized in that: The upper DBC substrate and the lower DBC substrate are both three-layer structures, wherein the middle layer is an insulating material, and the upper and lower layers are both high-conductivity materials; and the area of ​​the upper DBC substrate is smaller than that of the lower DBC substrate.

3. The PCB+laminated DBC hybrid package half-bridge power module according to claim 2, characterized in that: The upper DBC substrate and the lower DBC substrate are welded to form a "copper-ceramic-copper-ceramic-copper" laminated structure, and the middle copper layer forms a shielding effect between the top copper layer and the bottom copper layer, thereby achieving complete shielding between the output copper layer and the bottom copper layer.

4. The PCB+laminated DBC hybrid package half-bridge power module according to claim 1, characterized in that: The positive electrode pad (1), the upper half bridge arm switch tube (12), the lower half bridge arm diode (15), the upper layer negative electrode pad (2), and the negative electrode metal layer (16) constitute a commutation loop of the half bridge branch; the positive electrode pad (1), the upper half bridge arm diode (14), the lower half bridge arm switch tube (13), the upper layer negative electrode pad (2), and the negative electrode metal layer (16) constitute another commutation loop of the half bridge branch.

5. The PCB+laminated DBC hybrid package half-bridge power module according to claim 1, characterized in that: The drain electrode of the upper half bridge arm switch tube (12) is connected to the positive electrode metal layer (10) by welding, the gate electrode and the first source electrode are respectively connected to the upper half bridge arm switch tube drive signal pad (4) and the upper half bridge arm switch tube drive signal loop pad (5) by bonding wires, and the first source electrode and the second source electrode are respectively connected to the output electrode metal layer (11) by bonding wires; The bottom electrode of the upper half bridge arm diode (14) is connected to the positive electrode metal layer (10) by welding, and the top electrode is connected to the output electrode metal layer (11) by a bonding wire; The drain electrode of the lower half bridge arm switch tube (13) is connected to the output electrode metal layer (11) by welding, the gate electrode and the first source electrode are connected to the lower half bridge arm switch tube drive signal pad (6) and the lower half bridge arm switch tube drive signal loop pad (7) by bonding wires, and the first source electrode and the second source electrode are connected to the upper layer negative electrode pad (2) by bonding wires; The bottom electrode of the lower half bridge arm diode (15) is connected to the output electrode metal layer (11) by welding, and the top electrode is connected to the upper layer negative electrode pad (2) by a bonding wire.

6. The PCB+laminated DBC hybrid package half-bridge power module according to claim 5, characterized in that: The driving of the upper half bridge arm switch tube (12) and the lower half bridge arm switch tube (13) both adopts a Kelvin connection method, thereby reducing the common source inductance.

7. The PCB+laminated DBC hybrid package half-bridge power module according to claim 1, characterized in that: The positive electrode metal layer (10) is connected to the positive electrode pad (1) via a bonding wire, and the output electrode metal layer (11) is connected to the output electrode pad (3) via a bonding wire.

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