A method for controlling a reaction source of a semiconductor device and a semiconductor processing apparatus

Abstract

Embodiments of the present invention provide a method for controlling a reaction source of a semiconductor device and a semiconductor processing apparatus. The semiconductor device includes a source bottle, a first pipeline, a second pipeline, and a process chamber. One end of the first pipeline is an intake end, and the other end is inserted into the source liquid in the source bottle; one end of the second pipeline is inserted into the non-source liquid in the source bottle, and the other end is communicated with the process chamber. In the direction from the source bottle to the process chamber, a first pressure gauge and a position valve are sequentially arranged. The method includes: during the process, obtaining the source bottle pressure value and the process chamber pressure value monitored in real time; obtaining the fitting curve of the valve opening angle value with the source bottle pressure value and the process chamber pressure value; determining the valve opening angle value corresponding to the source bottle pressure value and the process chamber pressure value according to the fitting curve; controlling the position valve to adjust the valve opening angle according to the valve opening angle value, so as to ensure that the amount of the reaction source entering the process chamber is consistent, ensure the repeatability accuracy of the process, and improve the utilization rate of the reaction source.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a method for controlling a reaction source of a semiconductor device and a semiconductor processing apparatus. Background Art

[0002] In a chemical vapor deposition (CVD) process, reactants enter a process chamber and undergo a chemical reaction under a certain pressure and temperature. Some of the reactants need to be stored in a source bottle as a specially synthesized liquid. By heating the source bottle, the liquid is vaporized to generate a saturated vapor pressure, which exists in the non-liquid environment of the source bottle. The generated saturated vapor pressure is carried out by means of a carrier gas and enters the process chamber, where it reacts with other reaction gases to produce a desired thin film.

[0003] However, since the volume of the source bottle is fixed, as the process consumes, the liquid becomes less and less, and the generated saturated vapor pressure also decreases. There will be differences in the amount carried into the process chamber by the carrier gas. For high-end process technologies, the amount of the reaction source entering the chamber each time directly affects the repeatability of the process. If the amount of the reaction source is not controlled, too much of it may enter the chamber, resulting in waste as it is pumped away without reacting. Therefore, in the process, how to ensure that the amount of the reaction source entering the process chamber is consistent is an urgent problem to be solved. Summary of the Invention

[0004] In view of the above problems, embodiments of the present invention are proposed to provide a method for controlling a reaction source of a semiconductor device and a corresponding semiconductor processing apparatus that overcome the above problems or at least partially solve the above problems.

[0005] To solve the above problems, embodiments of the present invention disclose a method for controlling a reaction source of a semiconductor device. The semiconductor device includes a source bottle, a pipeline, and a process chamber. The pipeline includes a first pipeline and a second pipeline. One end of the first pipeline is an intake end, and the other end is inserted into the source liquid of the source bottle. One end of the second pipeline is inserted above the liquid level in the source bottle, and the other end is communicated with the process chamber. On the second pipeline, in the direction from the source bottle to the process chamber, a first pressure gauge and a position valve are sequentially arranged. The first pressure gauge is used to detect the pressure of the source bottle. A second pressure gauge is arranged on the process chamber, and the second pressure gauge is used to detect the pressure of the process chamber. The method includes:

[0006] During the process, obtain the currently monitored current source bottle pressure value and the current process chamber pressure value;

[0007] Obtain the fitting curve of the valve opening angle value of the position valve with the source bottle pressure value and the process chamber pressure value; the fitting curve is used to characterize the mapping relationship between the valve opening angle value of the position valve and the source bottle pressure value and the process chamber pressure value;

[0008] According to the fitting curve, determine the target valve opening angle value of the position valve corresponding to the current source bottle pressure value and the current process chamber pressure value;

[0009] According to the target valve opening angle value, control the position valve to adjust the valve opening angle.

[0010] Optionally, the semiconductor device further includes a temperature controller, and the method further includes:

[0011] When the valve opening angle value of the position valve reaches a preset angle threshold, control the temperature controller to increase the temperature of the source bottle.

[0012] Optionally, it further includes:

[0013] Set the position valve at different valve opening angle values, and record the source bottle pressure value and the process chamber pressure value at the different valve opening angle values;

[0014] Generate the fitting curve of the valve opening angle value with the source bottle pressure value and the chamber pressure value according to the source bottle pressure value and the chamber pressure value at the different valve opening angle values.

[0015] Optionally, the setting the position valve at different valve opening angle values, and recording the source bottle pressure value and the process chamber pressure value at the different valve opening angle values includes:

[0016] Obtain the initial value of the source bottle pressure value and the initial value of the process chamber pressure value corresponding to the position valve at the maximum valve opening angle value;

[0017] Control the valve opening angle value of the position valve to decrease by a preset angle value, and record the current pressure value of the source bottle and the current pressure value of the process chamber;

[0018] Judge whether the current valve opening angle value of the position valve reaches the preset angle value;

[0019] If not, repeat the steps of controlling the valve opening angle value of the position valve to decrease by a preset angle value, and recording the current pressure value of the source bottle and the current pressure value of the process chamber;

[0020] If it reaches, the recording ends.

[0021] Optionally, the formula of the fitting curve is S = K1 * R1 * T1 / (G1 3 * V1)+K2 * G2 3*V2 / (R2*T2), the molecular weight n = K3 / S, where S is the valve opening angle, K1, K2, and K3 are self-learning coefficients, R1 and R2 are gas constants, V1 and V2 are volumes, G1 is the source bottle pressure, and G2 is the process chamber pressure.

[0022] Optionally, the pipeline further includes a third pipeline, wherein one end of the third pipeline is connected to the first pipeline, and the other end is connected to the second pipeline; a plurality of valves are arranged on the pipeline to control the flow of gas in the pipeline, and the method further includes:

[0023] Before the process starts, control the opening and closing of the plurality of valves so that the gas entering from the intake end of the first pipeline is transmitted through the third pipeline without passing through the source bottle;

[0024] During the process, control the opening and closing of the plurality of valves so that the gas entering from the intake end of the first pipeline is transmitted through the source bottle without passing through the third pipeline.

[0025] Optionally, the semiconductor device further includes a vacuum pump; the pipeline further includes a fourth pipeline, one end of the fourth pipeline is connected to the process chamber, and the other end is connected to the vacuum pump; a mass flow controller is arranged at the intake end of the first pipeline; before the process starts, controlling the opening and closing of the plurality of valves so that the gas entering from the intake end of the first pipeline is transmitted through the third pipeline without passing through the source bottle includes:

[0026] Before the process starts, control the mass flow controller to set the flow value required for process cleaning, and control the opening and closing of the plurality of valves so that the gas entering from the intake end of the first pipeline is transmitted through the third pipeline to the process chamber without passing through the source bottle.

[0027] Optionally, opening the corresponding valve so that the gas entering from the intake end of the first pipeline is transmitted through the third pipeline to the process chamber without passing through the source bottle further includes:

[0028] After the preset time of gas transmission, control the opening and closing of the plurality of valves so that the gas stops entering from the intake end of the first pipeline, and turn on the vacuum pump to evacuate the pipeline to a vacuum state.

[0029] An embodiment of the present invention also discloses a semiconductor process equipment, which includes a source bottle, a pipeline, and a process chamber; the pipeline includes a first pipeline and a second pipeline. One end of the first pipeline is an air inlet end, and the other end is inserted above the liquid level in the source bottle; one end of the second pipeline is inserted into the non-original liquid in the source bottle, and the other end is communicated with the process chamber. And on the second pipeline in the direction from the source bottle to the process chamber, a first pressure gauge and a position valve are sequentially arranged. The first pressure gauge is used to detect the pressure of the source bottle; a second pressure gauge is arranged on the process chamber, and the second pressure gauge is used to detect the pressure of the process chamber. The semiconductor process equipment further includes:

[0030] A controller, which is used to obtain the current source bottle pressure value and the current process chamber pressure value monitored in real time during the process; obtain the fitting curve of the opening angle value of the position valve with the source bottle pressure value and the process chamber pressure value; the fitting curve is used to characterize the mapping relationship between the opening angle value and the source bottle pressure value and the process chamber pressure value; according to the fitting curve, determine the target opening angle value of the position valve corresponding to the current source bottle pressure value and the current process chamber pressure value; and control the position valve to adjust the opening angle according to the target opening angle value.

[0031] Optionally, the position valve includes

[0032] A housing, which is a hollow chamber;

[0033] Ventilation interfaces, there are two ventilation interfaces, which are respectively located on opposite sides of the housing. One end of the ventilation interface is inserted into the housing interior, and the other end is connected to the second pipeline;

[0034] A valve plate, which is located inside the housing and between the two ventilation interfaces inside the housing. The shape of the valve plate matches the cross-section of the housing;

[0035] A servo motor, which is connected to the valve plate through a fixing member and is used to control the rotation angle of the valve plate; the controller is used to adjust the opening angle by controlling the rotation angle of the servo motor to rotate the valve plate.

[0036] Optionally, the semiconductor equipment further includes:

[0037] A heating belt, which is arranged along the outer circumference of the source bottle and is used to increase the temperature of the source bottle;

[0038] A thermostat, which is used to receive the temperature increase instruction sent by the controller and control the heating belt to increase the temperature according to the temperature increase instruction;

[0039] The controller is further configured to send a heating instruction to the thermostat when the valve opening angle value of the position valve reaches a preset angle threshold.

[0040] The embodiments of the present invention have the following advantages: In the embodiments of the present invention, during the process, the current source bottle pressure value and the current process chamber pressure value obtained by real-time monitoring are acquired; the fitting curve of the valve opening angle value with the source bottle pressure value and the process chamber pressure value is obtained; the fitting curve is used to characterize the mapping relationship between the valve opening angle value of the position valve and the source bottle pressure value and the process chamber pressure value; according to the fitting curve, the target valve opening angle value of the position valve corresponding to the current source bottle pressure value and the current process chamber pressure value is determined; according to the target valve opening angle value, the position valve is controlled to adjust the size of the valve opening angle, so that the valve opening angle of the position valve can be timely responded according to the changes of the source bottle pressure and the chamber pressure, and the intake air volume is adjusted in real time to ensure the uniformity of thin film deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 is a flowchart of the steps of a reaction source control method provided by an embodiment of the present invention;

[0042] Figure 2 is a reaction source gas path diagram provided by an embodiment of the present invention;

[0043] Figure 3 is a structural diagram of a position valve provided by an embodiment of the present invention;

[0044] Figure 4 is another reaction source gas path diagram provided by an embodiment of the present invention;

[0045] Figure 5 is a control self-learning flowchart provided by an embodiment of the present invention;

[0046] Figure 6 A process execution flowchart provided by an embodiment of the present invention;

[0047] Figure 7 is a process temperature compensation function flowchart provided by an embodiment of the present invention;

[0048] Figure 8 is a structural block diagram of a semiconductor process equipment provided by an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0049] To make the above objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0050] In the process of film coating, the quality of the generated film is positively correlated with the intake gas volume of the reaction source. When more gas enters, the film formed by the reaction will be thicker; when less gas enters, the film formed by the reaction will be thinner. In the prior art, in order to improve the film uniformity, usually the intake gas volume is adjusted by adjusting the carrier gas flow rate and the dilution gas flow rate of the reaction source, and then the gas flow rate is recorded and supplemented by recording the number of reaction wafers to adjust the film uniformity.

[0051] However, the method of changing the intake gas volume of the carrier gas and the dilution gas by changing the flow rate value set by the mass flow controller cannot determine the nature and pressure of the reaction source in real time, and the mass flow controller needs to be frequently changed, resulting in a very large number of process recipes, which is not conducive to control and is prone to mixing situations, having a great impact on the process; as the liquid source of the process reaction is consumed, the space of the non-liquid source increases, and the generated saturated vapor pressure will increase. At this time, more reactants carried out by the carrier gas will lead to a thicker deposition of the reaction film, affecting the process result; when the nature of the liquid source of the reaction changes, resulting in insufficient saturated vapor pressure or very little liquid source, it is not enough to maintain the existing process. At this time, generally, the abnormality is found by the process result or the pressure test of the chamber pressure gauge to replace the source bottle, which will waste the remaining source liquid in the source bottle; moreover, the client conducts sampling spot checks and data analysis on the process data before, during, and after each batch. If this piece is normal, it is considered that all the samples in the whole batch are normal, ensuring that when an abnormality is found in the current batch, it can be detected in time and not flow into the next batch. This method is directly manifested by the process result and is very objective and direct. However, if an abnormality occurs, all the process wafers in the whole batch need to be confirmed and analyzed for data, and the lag is relatively large.

[0052] One of the core concepts of the embodiments of the present invention is to add a vacuum gauge and a position valve (which can achieve 0-100% angle valve opening) to the outlet pipeline of the source bottle, and use the fitting curve of the pre-generated valve opening angle value, the source bottle pressure value, and the process chamber pressure value to determine the valve opening angle value corresponding to the source bottle pressure value and the process chamber pressure value, and ensure the consistency of the amount of the reaction source entering the process chamber by adjusting the valve opening angle of the corresponding position valve, thereby ensuring the repeatability accuracy of the process.

[0053] Refer to Figure 1, which shows a step flowchart of a method for controlling a reaction source of a semiconductor device provided by an embodiment of the present invention. The semiconductor device includes a source bottle, a pipeline, and a process chamber; the pipeline includes a first pipeline and a second pipeline. Among them, one end of the first pipeline is an air inlet end, and the other end is inserted into the source liquid in the source bottle; one end of the second pipeline is inserted above the liquid level in the source bottle, and the other end is communicated with the process chamber. And on the second pipeline in the direction from the source bottle to the process chamber, a first pressure gauge and a position valve are sequentially arranged. The first pressure gauge is used to detect the pressure of the source bottle; a second pressure gauge is arranged on the process chamber, and the second pressure gauge is used to detect the pressure of the process chamber. The method may specifically include the following steps:

[0054] Step 101, during the process, obtain the currently monitored current source bottle pressure value and the current process chamber pressure value.

[0055] As an example, as Figure 2 shown is a reaction source gas pipeline diagram provided by the present invention. 200 is the source bottle, 201 is the first pipeline, 202 is the second pipeline, 203 is the process chamber, 204 is the position valve, 205 is the first pressure gauge, 206 is the second pressure gauge, 207 is the third pipeline, 208 is the mass flow controller, 209 is the fourth pipeline, 210 is the control system, 211 is the vacuum pump, and 212 is the temperature controller. One end of the first pipeline 201 away from the source bottle 200 is the air inlet end, and the other end is inserted into the source liquid in the source bottle 200; one end of the second pipeline 202 is inserted into the non-source liquid in the source bottle 200, that is, above the liquid level, and the other end is connected to the process chamber 203. The first pressure gauge 205 on the second pipeline 202 can be used to measure the pressure of the source bottle, and the second pressure gauge 206 on the process chamber 203 can be used to measure the pressure of the process chamber 203.

[0056] Exemplarily, during the process, the control system 210 can monitor in real time the outlet pressure of the source bottle 200 detected by the first pressure gauge 205 and the pressure of the process chamber 203 detected by the second pressure gauge 206.

[0057] In an embodiment of the present invention, the pipeline further includes a third pipeline. Among them, one end of the third pipeline is connected to the first pipeline, and the other end is connected to the second pipeline; a plurality of valves are arranged on the pipeline to control the flow of gas in the pipeline. The control method further includes: before the process starts, control the on-off of the plurality of valves so that the gas entering from the air inlet end of the first pipeline is transmitted through the third pipeline and does not pass through the source bottle; during the process, control the on-off of the plurality of valves so that the gas entering from the air inlet end of the first pipeline is transmitted through the source bottle and does not pass through the third pipeline.

[0058] As an example, as Figure 2The following is a reaction source gas pipeline diagram provided by an embodiment of the present invention. Multiple valves such as valve a, b, c, d, e, position valve, f, g, etc. can be provided on the pipeline. The third pipeline 207 is a pipeline located outside the source bottle 200 and connecting the first pipeline 201 and the second pipeline 202. The first port of the third pipeline 207 can be set between valves b and c of the second pipeline 202, and the second port of the third pipeline 207 can be set between valves d and e on the second pipeline 202.

[0059] As an example, the third pipeline 207 can be used to clean the pipeline outside the source bottle 200 before the process. To facilitate thorough cleaning, the first port of the third pipeline 207 can be set near valve c, and the second port of the third pipeline 207 can be set near valve d.

[0060] Exemplarily, before the process starts, the control system 210 can control the opening and closing of multiple valves so that the gas entering from the intake end of the first pipeline 201 is transmitted through the third pipeline 207 without passing through the source bottle 200; during the process, the opening and closing of multiple valves can be controlled so that the gas entering from the intake end of the first pipeline 201 is transmitted through the source bottle 200 without passing through the third pipeline 207.

[0061] For example, before the process starts, valves a, b, f, e can be controlled to open, and the position valve 204 is opened 100%, so that the gas passes through the third pipeline 207 from the intake port for pipeline purging and cleaning to remove the impurity gas in the pipeline.

[0062] For example, during the process, valves a, b, c, d, e can be controlled to open, and the position valve 204 is set to a preset valve opening angle so that the gas is transmitted through the source bottle 200 without passing through the third pipeline 207. During the process, valves a, b, c, d, e can be opened in sequence, and the gas carries the internal gas of the source bottle 200 into the process chamber 209 to react with another process gas.

[0063] It should be noted that for the convenience of controlling the intake of the source bottle, valve e can be set on the first pipeline 201 outside the source bottle 200 and near the intake port position of the source bottle 200; for the convenience of controlling the outtake of the source bottle 200, valve d can be set on the second pipeline 202 outside the source bottle 200 and near the outtake port position of the source bottle 200; the first pressure gauge 205, which is used to detect the pressure at the outtake end of the source bottle 200, is set on the second pipeline 202 between valve d and valve e. In actual applications, for the convenience of more accurately reflecting the pressure of the source bottle 200, the first pressure gauge 205 can be set near valve d; the position valve 204 is used to control the molecular weight of the gas entering the process chamber 203. For the convenience of more accurately controlling the molecular weight of the gas entering the process chamber 203, it can be set on the pipeline near the process chamber 203.

[0064] In addition, in order to further control the gas inlet and outlet of the source bottle, a valve e can be provided. The position of the valve e can be anywhere on the second pipeline 202 between the first pressure gauge 205 and the position valve 204. Those skilled in the art can set it according to the actual situation, and the embodiments of the present invention do not limit it here.

[0065] In addition, those skilled in the art should understand that the setting of the above valve positions is only an example of the present invention. Those skilled in the art can adopt other ways for setting, and the present invention does not limit it here.

[0066] In an embodiment of the present invention, the semiconductor device further includes a vacuum pump; the pipeline further includes a fourth pipeline, one end of the fourth pipeline is connected to the process chamber, and the other end is connected to the vacuum pump; a mass flow controller is provided at the gas inlet end of the first pipeline; before the process starts, controlling the opening and closing of multiple valves so that the gas entering from the gas inlet end of the first pipeline is transmitted through the third pipeline without passing through the source bottle, including: before the process starts, controlling the mass flow controller to set the flow value required for process cleaning, and controlling the opening and closing of multiple valves so that the gas entering from the gas inlet end of the first pipeline is transmitted through the third pipeline to the process chamber without passing through the source bottle.

[0067] As an example, the fourth pipeline 209 can be a pipeline connecting the process chamber 203 and the vacuum pump 211. A valve g is provided on the fourth pipeline 209 to control the on-off between the vacuum pump and the process chamber.

[0068] As an example, before the process starts, the mass flow controller 208 can be controlled to set the flow value required for process cleaning, open the valves a, b, f, e, and the opening of the position valve is 100%, so that the gas passes through the third pipeline 207 from the air inlet to perform pipeline purging and cleaning to remove the impurity gas in the pipeline.

[0069] In an embodiment of the present invention, opening the corresponding valves so that the gas entering from the gas inlet end of the first pipeline is transmitted through the third pipeline to the process chamber without passing through the source bottle further includes: after a preset time of gas transmission, controlling the opening and closing of multiple valves so that the gas stops entering from the gas inlet end of the first pipeline, and opening the vacuum pump to evacuate the pipeline to a vacuum state.

[0070] As an example, during the process of pipeline cleaning, after a preset time of gas transmission, the opening and closing of the valves can be controlled so that the air inlet stops admitting air, and the vacuum pump 211 is opened to extract the remaining gas in the pipeline so that the pipeline is in a vacuum state.

[0071] For example, after the intake air has flowed for 30 seconds, valve a can be closed while the states of other valves remain unchanged. The gas passes through the process chamber 203, the fourth pipeline 209 with valve g open, and the vacuum pump 211. The vacuum pump 211 is used to evacuate the pipeline to a vacuum state for 20 seconds. This process is repeated multiple times to complete the pipeline purging and preparation work.

[0072] Step 102: Obtain the fitting curve of the valve opening angle value with respect to the source bottle pressure value and the process chamber pressure value; this fitting curve is used to characterize the mapping relationship between the valve opening angle value of the position valve and the source bottle pressure value and the process chamber pressure value.

[0073] Exemplarily, the control system can obtain the fitting curve of the valve opening angle value of the position valve with respect to the source bottle pressure value and the process chamber pressure value. Among them, this fitting curve can characterize the mapping relationship between the valve opening angle value and the source bottle pressure value and the process chamber pressure value. For example, according to the obtained current source bottle pressure value and process chamber pressure value, the corresponding valve opening angle value can be obtained through the mapping relationship between the valve opening angle value and the source bottle pressure value and the process chamber pressure value.

[0074] In an embodiment of the present invention, the position valve is set at different valve opening angle values, and the source bottle pressure value and the process chamber pressure value at different valve opening angle values are recorded; according to the source bottle pressure value and the chamber pressure value at different valve opening angle values, a fitting curve of the valve opening angle value with respect to the source bottle pressure value and the chamber pressure value is generated.

[0075] Exemplarily, before the process, the position valve 204 can be set at different valve opening angles, and the source bottle pressure value and the chamber pressure value at different valve opening angles are recorded. According to the source bottle pressure value and the chamber pressure value at different valve opening angle values, a fitting curve of the valve opening angle value with respect to the source bottle pressure value and the chamber pressure value can be generated.

[0076] As an example, as Figure 2 shown is a reaction source gas pipeline diagram provided by an embodiment of the present invention. After the pipeline has been cleaned, at this time valve a is in the closed state, valves b, c, d, e, and g can be opened, and the valve opening angle S of the position valve 204 is set to 100%. After the pipeline gas has stabilized for 30 seconds, valve a is opened to start self-learning:

[0077] For example, set the initial angle of the position valve 204 to 100%, record the source bottle pressure value G10 corresponding to the initial valve opening angle and the pressure value G20 of the process chamber, modify the angle of the position valve to 90%, and record the current test value G19 of the first pressure gauge 205 and the current test value G29 of the second pressure gauge 206; with other settings unchanged, then modify the angle of the position valve to 80%, and record the current test value G18 of the first pressure gauge 205 and the current test value G28 of the second pressure gauge 206; and so on, until the valve opening angle of the position valve 204 is modified to 10%, record the current test value G11 of the first pressure gauge 205 and the current test value G21 of the second pressure gauge 206. According to the recorded source bottle pressure values and chamber pressure values at valve opening angles from 10% to 100%, generate a fitting curve of the valve opening angle value versus the source bottle pressure value and the chamber pressure value.

[0078] Exemplarily, as Figure 3 shown in the structural diagram of a position valve provided by an embodiment of the present invention. The position valve includes a housing 2041, a ventilation interface 2042, a valve plate 2043, a servo motor 2044, and a fixing member 2045. Among them, the housing 2041 is a hollow chamber; there are two ventilation interfaces 2042, which are respectively located on opposite sides of the housing 2041. One end of the ventilation interface 2042 is inserted into the interior of the housing 2041, and the other end is connected to the second pipeline 202; the valve plate 2043 is located inside the housing 2041 and between the two ventilation interfaces 2042 inside the housing 2041. The shape of the valve plate 2043 matches the cross-section of the housing 2041; the servo motor 2044 is connected to the valve plate 2043 through the fixing member 2045 and is used to control the rotation angle of the valve plate 2043.

[0079] As an example, the housing can be a cylinder, the cross-section of the housing in the direction perpendicular to the second pipeline can be circular, and the valve plate can be circular and match the cross-section of the housing.

[0080] As an example, the position control of the valve plate can be achieved by rotating the servo motor to realize valve opening at an angle of 0 - 100%. For example, when the valve opening angle value is 100%, the valve plate rotates 90°. In addition, the control of the valve opening angle can be achieved by driving the servo motor to rotate using a control system.

[0081] It should be noted that the position valve 204 has a flow suppression effect. When the pumping speed of the vacuum pump 211 at the rear end of the position valve 204 is constant, the smaller the valve angle opening, the better the flow suppression effect, the less gas passes through the position valve 204, and the less the molecular weight of the gas entering the process chamber 203; when the angle increases, the flow suppression effect weakens, the more gas passes through the position valve 204, and the more the molecular weight of the gas entering the process chamber 203. Therefore, after a certain process time, more gas with a large molecular weight in the source bottle 200 flows into the process chamber 203, resulting in a reduction in the molecular weight of the gas in the source bottle 200.

[0082] In an embodiment of the present invention, the formula of the fitting curve is S = K1 * R1 * T1 / (G13 * V1) + K2 * G23 * V2 / (R2 * T2), and the molecular weight n = K3 / S, where S is the valve opening angle, K1, K2, and K3 are self-learning coefficients, R1 and R2 are gas constants, V1 and V2 are volumes, G1 is the source bottle pressure, and G2 is the process chamber pressure.

[0083] As an example, the fitting formula of the fitting curve of the valve opening angle with the source bottle pressure and the chamber pressure can be derived from the ideal gas equation PV = nRT (where P is the pressure, V is the volume, n is the molecular weight, R is the gas constant, and T is the Kelvin temperature). The gas molecular weight is proportional to the pressure and volume and inversely proportional to the temperature. When the pumping speed of the vacuum pump 211 remains unchanged, the larger the valve opening angle of the position valve 204, the more the molecular weight decreases, and the more the molecular weight entering the process chamber 203. Therefore, the fitting curve formula S = K1 * R1 * T1 / (G1 3 * V1) + K2 * G2 3 * V2 / (R2 * T2), and the molecular weight n = K3 / S, where S is the valve opening angle, K1, K2, and K3 are self-learning coefficients, R1 and R2 are gas constants, V1 and V2 are volumes, G1 is the source bottle pressure, and G2 is the process chamber pressure.

[0084] In an embodiment of the present invention, the position valve is set at different valve opening angle values, and the source bottle pressure values and the process chamber pressure values at different valve opening angle values are recorded, including: obtaining the initial values of the source bottle pressure value and the process chamber pressure value when the position valve is at the maximum valve opening angle; controlling the valve opening angle value of the position valve to decrease by a preset angle value, and recording the current pressure value of the source bottle and the current pressure value of the process chamber; determining whether the current valve opening angle value of the position valve reaches the preset angle value; if not, repeating the steps of controlling the valve opening angle value of the position valve to decrease by the preset angle value and recording the current pressure value of the source bottle and the current pressure value of the process chamber; if so, the recording ends.

[0085] For example, after the pipeline is purged, valve a is in the closed state at this time. Valves b, c, d, e, and g can be opened. The valve opening angle S of position valve 204 is set to 100%. After stabilizing the pipeline gas for 30 seconds, self-learning starts: open valve a. After the pressure value of the second pressure gauge stabilizes, record the source bottle pressure G10 measured by the first pressure gauge 205 and the process chamber pressure G20 measured by the second pressure gauge 206; control the valve opening angle S to decrease by 10%, and record the pressure value of the source bottle 200 at this time and the pressure value of the process chamber 203 at this time; determine whether S is 10%. If S is not 10%, continue to decrease S by 10% and record the pressure value of the source bottle 200 at this time and the pressure value of the chamber 203 at this time. If not reached, repeat the step of decreasing S by 10% and recording the pressure value of the source bottle at this time and the pressure value of the chamber 203 at this time; if reached, record the end and the learning is completed.

[0086] In addition, the valve opening angle can be used to control the valve plate position by rotating the servo motor in the position valve 204, realizing valve opening at an angle of 0 - 100%. The required angle can be realized by driving the servo motor to rotate through the control system 210.

[0087] Step 103: Determine the target valve opening angle value corresponding to the current source bottle pressure value and the current process chamber pressure value according to the fitting curve.

[0088] Exemplarily, during the process of the process, the control system can obtain in real time the pressure value detected by the source bottle pressure gauge and the pressure value detected by the chamber pressure gauge, and determine the valve opening angle value corresponding to the current source bottle pressure value and the current process chamber pressure value according to the fitting curve of the valve opening angle and the source bottle pressure and the chamber pressure.

[0089] For example, in a specific implementation process, a fixed flow rate M1 can be set through the mass flow controller 208. Valves a, b, c, d, e, and g are opened. The initial valve opening angle of the position valve 204 is set to S1. The first pressure gauge 205 and the second pressure gauge 206 respectively detect the source bottle pressure value and the chamber pressure value in real time and feedback them to the control system 210. The control system 210 calculates the valve opening angle S2 that needs to be adjusted according to the fitting formula of the valve opening angle and the source bottle pressure and the chamber pressure.

[0090] It should be noted that there are certain differences in the deposited film thickness of different processes. For example, power devices may require thick films or thin films, which can be determined based on the results of some actual process tests. The opening angle of the position valve is also adjusted based on the initial value obtained from the actual process tests. For example, in some thick film processes with low requirements for uniformity but high production capacity requirements, the angle can be appropriately increased. In addition, in some thin film processes with high requirements for uniformity, multiple cycle depositions are required, and the smaller the opening angle, the better the result. Those skilled in the art can set it according to the actual situation, and the embodiments of the present invention do not limit it here.

[0091] Step 104: Control the position valve to adjust the opening angle according to the target opening angle value.

[0092] Exemplarily, the control system can control the position valve to adjust the opening angle according to the target opening angle value. For example, the opening angle S2 that needs to be adjusted can be calculated and the opening angle of the position valve can be controlled to be adjusted from S1 to S2, so as to ensure that the molecular weight of the reaction source introduced into the process chamber each time is fixed.

[0093] As an example, as the process is executed, the liquid in the source bottle 200 gradually consumes, which will cause the space of the saturated vapor pressure in the non-liquid part of the source bottle 200 to become larger, and more saturated vapor pressure reactants will be generated, resulting in an increase in the carrier gas pressure. The control system 210 can obtain the source bottle pressure value detected by the first pressure gauge 205 and the process chamber pressure value detected by the second pressure gauge 206, and calculate the corresponding opening angle value according to the fitting curve of the opening angle value with the source bottle pressure value and the process chamber pressure value, and control the opening angle of the position valve 204 to be closed.

[0094] In an embodiment of the present invention, the semiconductor device further includes a temperature controller, and the control method further includes: when the opening angle value of the position valve reaches a preset angle threshold, control the temperature controller to increase the temperature of the source bottle.

[0095] In the embodiment of the present invention, as the process progresses for a long time, more and more reaction sources in the source bottle are consumed, and the volume of the non-liquid part in the source bottle increases. When the reaction source in the source bottle is reduced to a certain threshold (for example, less than one-fifth of the source bottle), the molecular weight generated by the saturated vapor pressure decreases, and the temperature needs to be increased to supplement the molecular weight generated by the gas.

[0096] Exemplarily, the control system 210 can obtain the source bottle pressure value detected by the first pressure gauge 205 and the process chamber pressure value detected by the second pressure gauge 206. It can calculate the opening valve angle S2 to be adjusted according to the fitting formula of the opening valve angle with the source bottle pressure and the chamber pressure. If S2 is greater than the preset opening valve angle threshold, it controls the thermostat 212 to increase the temperature of the source bottle, and at the same time adjusts the opening valve angle of the position valve 204 to S2, so as to realize a fixed reaction source flow rate introduced into the chamber.

[0097] It should be noted that the generation of saturated vapor pressure is related to temperature, volume, molecular weight, etc. However, when the reaction source is reduced to the preset reaction source threshold, for example, when the reaction source is only one-fifth of the source bottle volume, due to the large reduction in the amount of the reaction source and the occurrence of partial failure, the molecular weight generated by the saturated vapor pressure is insufficient, resulting in a decrease in pressure.

[0098] In the embodiment of the present invention, during the process, the current source bottle pressure value and the current process chamber pressure value monitored in real time are obtained; the fitting curve of the opening valve angle value with the source bottle pressure value and the process chamber pressure value is obtained; the fitting curve is used to characterize the mapping relationship between the opening valve angle value and the source bottle pressure value and the process chamber pressure value; according to the fitting curve, the target opening valve angle value corresponding to the current source bottle pressure value and the current process chamber pressure value is determined; according to the target opening valve angle value, the position valve is controlled to adjust the size of the opening valve angle, so that the opening valve angle of the position valve can be timely responded according to the changes of the source bottle pressure and the chamber pressure, and the intake air volume can be adjusted in real time to ensure the uniformity of film deposition. And through the real-time monitoring of the control system, the changes in the intake air volume caused by other factors, such as the intake air volume change of the mass flow controller and the pumping speed change of the process chamber vacuum pump, can also be timely responded.

[0099] Refer to Figure 4 , which shows another reaction source gas path diagram provided by the embodiment of the present invention. 301 is the source bottle, 302 is the non-liquid part in the source bottle, 303 is the source bottle heating belt, 304 is the liquid source in the source bottle, 311-320 are pneumatic diaphragm valves, 321 is the position valve, 322 is the process chamber, 323 is the isolation valve, and 324 is the vacuum pump. The source bottle 301 is provided with a heating belt 303, and the process chamber 322 is provided with a process chamber pressure gauge Gauge2. In the direction of the first pipeline from the intake end far from the source bottle to the other end inserted into the liquid source 304 in the source bottle, valves 311, 312, 314, and 315 are sequentially arranged. In the direction of the second pipeline from one end inserted into the non-liquid part 302 in the source bottle to the other end connected to the process chamber 322, valves 318, the source bottle pressure gauge Gauge1, valve 317, and the position valve 321 are sequentially arranged. The specific process flow may include the following steps:

[0100] 1) Before the process starts, the pipeline can be cleaned to remove impurity gases.

[0101] For example, valves 311, 312, 314, 316, and 317 can be controlled to open, the opening degree of position valve 321 is set to 100%, the mass flow controller MFC1 is set to the flow value required for process purging, and the pipeline is purged and cleaned. After flowing gas for 30 seconds, valve 311 is closed, and the states of other valves remain unchanged. The gas passes through the process chamber 322 and then enters the vacuum pump 324 to evacuate the pipeline to a vacuum state. After evacuating for 20 seconds and repeating multiple times, the pipeline purging and preparation work are completed. Among them, before the process starts, all valves can be in the closed state.

[0102] 2) Before the process, self-learning and calibration are performed by adjusting the opening angle of position valve 321 and recording the pressure values of source bottle 301 and chamber 322 at different opening angles.

[0103] For example, after the pipeline is purged, at this time valve 311 is in the closed state. The carrier gas flow required for the process can be set through the mass flow controller MFC1. Valves 312, 314, 315, 318, 317, and 323 are opened, and the opening angle S of position valve 321 is set to 100%. After stabilizing the pipeline gas for 30 seconds, self-learning starts: valve 311 is opened. After the pressure value of process chamber Gauge2 is stable, the pressure G10 of Gauge1 and the pressure G20 of Gauge2 are recorded; the opening angle S is controlled to decrease by 10%, and the pressure value of the source bottle and the pressure value of the chamber at this time are recorded; it is judged whether the opening angle S is 10%. If S is not 10%, then S is continuously decreased by 10%, and the pressure value of the source bottle and the pressure value of the chamber at this time are recorded until S is 10%, and the learning ends.

[0104] As an example, as Figure 5 shown is a self-learning control flowchart provided by an embodiment of the present invention:

[0105] S501, self-learning starts;

[0106] S502, MFC1 sets the carrier gas flow value;

[0107] S503, the source bottle temperature is stable;

[0108] S504, valves 312, 314, 315, 318, 317, and 323 are opened;

[0109] S505, the position valve is set to an opening angle value of 100%;

[0110] S506, valve 311 is opened after 30 seconds;

[0111] S507, valve 323 is opened;

[0112] S508, record the initial source bottle pressure value G10 and the initial chamber pressure value G20;

[0113] S509, control the valve opening angle S to decrease by 10%;

[0114] S520, record the source bottle pressure value G1 and the chamber pressure value G2;

[0115] S521, determine whether the valve opening angle S is 10%;

[0116] S522, if yes, end the learning; if not, return to step S509.

[0117] 3) According to the recorded pressure values of the source bottle and the chamber at different valve opening angles, obtain the fitting curve of the valve opening angle versus the source bottle pressure and the chamber pressure.

[0118] For example, according to the recorded pressure values of the source bottle and the chamber at different valve opening angles, and the ideal gas equation PV = nRT (where P is pressure, V is volume, n is molecular weight, R is the gas constant, and T is the Kelvin temperature), the fitting curve formula S = K1*R1*T1 / (G1 3 *V1)+K2*G2 3 *V2 / (R2*T2), molecular weight n = K3 / S, where S is the valve opening angle, K1, K2, and K3 are self-learning coefficients, R1 and R2 are gas constants, and V1 and V2 are volumes.

[0119] 4) Start the process. The control system acquires the source bottle pressure value detected by Gauge1 and the process chamber pressure value detected by Gauge2 in real-time monitoring, and controls the position valve to adjust the valve opening angle according to the fitting curve of the valve opening angle versus the source bottle pressure and the chamber pressure.

[0120] Exemplarily, during the process, valves 311, 312, 314, 315, 318, and 317 can be controlled to open in sequence, and the position valve 321 is set to a preset valve opening angle, so that the gas is transmitted through the source bottle without passing through the third pipeline, and the gas carries the internal gas of the source bottle 1 into the reaction chamber 322 to react with another process gas.

[0121] In a specific implementation process, the mass flow controller MFC1 can set the required flow rate M1 for the process. Open valves 311, 312, 314, 315, 318, 317, 323, and set the initial opening angle of the position valve to S1. The source bottle pressure gauge Gauge1 and the process chamber Gauge2 pressure gauge respectively detect the source bottle pressure value and the chamber pressure value in real time and feedback them to the control system. The control system calculates the required opening angle S2 to be adjusted according to the fitting formula of the opening angle with the source bottle pressure and the chamber pressure, and controls the position valve to adjust the opening angle to S2, so as to ensure that the molecular weight of the reaction source introduced into the chamber 322 each time is fixed.

[0122] As an example, Figure 6 The following is a process execution flow chart provided by an embodiment of the present invention:

[0123] S601, receive a process execution instruction;

[0124] S602, set a fixed opening angle S1;

[0125] S603, read the source bottle pressure value G1 and the chamber pressure value G2;

[0126] S604, calculate the opening angle S2 using the fitting formula;

[0127] The required opening angle S2 to be adjusted can be calculated according to the fitting formula of the opening angle with the source bottle pressure and the chamber pressure.

[0128] S605, drive the position valve to rotate to S2, and return to step S603;

[0129] S606, receive a process end instruction and exit.

[0130] 5) Supplement the molecular weight of the reaction source gas.

[0131] Such as Figure 4 The following is another reaction source gas path diagram provided by an embodiment of the present invention. The heating tape 303 is arranged along the outer circumference of the source bottle 301 for raising the temperature of the source bottle 301; the temperature controller is used to receive the temperature increase instruction sent by the controller and control the heating tape to raise the temperature according to the temperature increase instruction; the controller is further used to send a temperature increase instruction to the temperature controller when the opening angle value of the position valve reaches a preset angle threshold.

[0132] Exemplarily, when the opening angle of the position valve reaches the preset threshold, the control system in the controller controls the temperature controller to raise the temperature of the source bottle heating tape 303, and at the same time increases the angle of the position valve 321 to achieve a fixed flow rate of the reaction source introduced into the process chamber 322.

[0133] For example, the control system obtains the pressure value detected by the source bottle pressure gauge and the pressure value detected by the process chamber pressure gauge, and calculates the opening valve angle S2 to be adjusted according to the fitting formula of the opening valve angle with the source bottle pressure and the process chamber pressure. If S2 is greater than the preset opening valve angle threshold, the thermostat is controlled to increase the temperature of the heating belt 303, and at the same time, the angle of the position valve 321 is increased to keep the flow rate of the reaction source introduced into the chamber 322 constant.

[0134] As an example, Figure 7 The following is a process temperature compensation function flow chart provided by an embodiment of the present invention:

[0135] S701, receive a process execution instruction;

[0136] S702, set a fixed opening valve angle S1;

[0137] S703, read the source bottle pressure value G1 and the chamber pressure value G2;

[0138] S704, calculate the opening valve angle S2 using the fitting formula;

[0139] S705, drive the position valve to rotate to S2;

[0140] S706, S2 > S1 + 5%;

[0141] S707, increase the temperature of the source bottle by 5°C, and return to step S703;

[0142] S708, receive a process end instruction and exit.

[0143] It should be noted that for the method embodiments, for simplicity of description, they are all expressed as a series of action combinations. However, those skilled in the art should know that the embodiments of the present invention are not limited by the described action sequences, because according to the embodiments of the present invention, certain steps can be performed in other sequences or simultaneously. Secondly, those skilled in the art should also know that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily essential for the embodiments of the present invention.

[0144] Referring to Figure 8, which shows a structural block diagram of a semiconductor process equipment provided by an embodiment of the present invention. The above-mentioned semiconductor equipment 801 includes a source bottle, a first pipeline, a second pipeline, and a process chamber. Among them, one end of the above-mentioned first pipeline is an air inlet end, and the other end is inserted into the source liquid of the above-mentioned source bottle; one end of the above-mentioned second pipeline is inserted into the non-source liquid of the above-mentioned source bottle, and the other end is communicated with the above-mentioned process chamber. And in the direction from the above-mentioned source bottle to the above-mentioned process chamber, a first pressure gauge and a position valve are sequentially arranged. The above-mentioned first pressure gauge is used to detect the air outlet pressure of the source bottle; a second pressure gauge is arranged on the above-mentioned process chamber, and the above-mentioned second pressure gauge is used to detect the process chamber pressure. The above-mentioned semiconductor process equipment 801 further includes:

[0145] A controller 8011, configured to obtain the current source bottle pressure value and the current process chamber pressure value monitored in real time during the process; obtain the fitting curve of the valve opening angle value with the source bottle pressure value and the process chamber pressure value; the above-mentioned fitting curve is used to characterize the mapping relationship between the above-mentioned valve opening angle value and the above-mentioned source bottle pressure value and the above-mentioned process chamber pressure value; determine the target valve opening angle value corresponding to the above-mentioned current source bottle pressure value and the above-mentioned current process chamber pressure value according to the above-mentioned fitting curve; control the above-mentioned position valve to adjust the size of the valve opening angle according to the above-mentioned target valve opening angle value.

[0146] In an optional embodiment of the present invention, the above-mentioned position valve includes

[0147] A housing, the above-mentioned housing is a hollow chamber;

[0148] Ventilation interfaces, there are two of the above-mentioned ventilation interfaces, which are respectively located on both sides of the above-mentioned housing along the direction of the above-mentioned second pipeline. One end of the above-mentioned ventilation interface is inserted into the interior of the above-mentioned housing, and the other end is connected to the above-mentioned second pipeline;

[0149] A valve plate, the above-mentioned valve plate is located inside the above-mentioned housing and between the two above-mentioned ventilation interfaces inside the above-mentioned housing. The shape of the above-mentioned valve plate matches the cross-section of the above-mentioned housing;

[0150] A servo motor, the above-mentioned servo motor is connected to the above-mentioned valve plate through a fixing member and is used to control the rotation angle of the above-mentioned valve plate; the above-mentioned controller is used to adjust the size of the valve opening angle by controlling the rotation angle of the above-mentioned servo motor to rotate the above-mentioned valve plate.

[0151] In an optional embodiment of the present invention, the above-mentioned semiconductor equipment further includes:

[0152] A heating belt, the above-mentioned heating belt is arranged along the circumferential direction of the outside of the above-mentioned source bottle and is used to increase the temperature of the above-mentioned source bottle;

[0153] A temperature controller, configured to receive the temperature increase instruction sent by the above-mentioned controller and control the above-mentioned heating belt to increase the temperature according to the above-mentioned temperature increase instruction;

[0154] The above-mentioned controller is further configured to send a temperature increase instruction to the above-mentioned thermostat when the valve opening angle value of the above-mentioned position valve reaches a preset angle threshold.

[0155] In an optional embodiment of the present invention, the above-mentioned semiconductor device further includes a thermostat, and the above-mentioned controller is configured to control the above-mentioned thermostat to increase the temperature of the source bottle when the valve opening angle value of the above-mentioned position valve reaches a preset angle threshold.

[0156] In an optional embodiment of the present invention, the above-mentioned controller is further configured to set the above-mentioned position valve at different valve opening angle values, and record the source bottle pressure value and the process chamber pressure value at the above-mentioned different valve opening angle values; generate a fitting curve of the above-mentioned valve opening angle value with the source bottle pressure value and the chamber pressure value according to the source bottle pressure value and the chamber pressure value at the above-mentioned different valve opening angle values.

[0157] In an optional embodiment of the present invention, for the above-mentioned setting the above-mentioned position valve at different valve opening angle values and recording the source bottle pressure value and the process chamber pressure value at the above-mentioned different valve opening angle values, the above-mentioned controller is configured to obtain the initial value of the above-mentioned source bottle pressure value and the initial value of the above-mentioned process chamber pressure value; control the valve opening angle value of the above-mentioned position valve to decrease by a preset angle value, and record the current pressure value of the above-mentioned source bottle and the current pressure value of the above-mentioned process chamber; determine whether the current valve opening angle value of the above-mentioned position valve reaches a preset angle value; if not, repeat the above steps of controlling the valve opening angle value of the above-mentioned position valve to decrease by a preset angle value and recording the current pressure value of the above-mentioned source bottle and the current pressure value of the above-mentioned process chamber; if so, end the recording.

[0158] In an optional embodiment of the present invention, the formula of the above-mentioned fitting curve is S = K1 * R1 * T1 / (G1 3 * V1) + K2 * G2 3 * V2 / (R2 * T2), the molecular weight n = K3 / S, where S is the valve opening angle, K1, K2, and K3 are self-learning coefficients, R1 and R2 are gas constants, V1 and V2 are volumes, G1 is the source bottle pressure, and G2 is the process chamber pressure.

[0159] In an optional embodiment of the present invention, the above-mentioned pipeline further includes a third pipeline, wherein one end of the above-mentioned third pipeline is connected to the above-mentioned first pipeline, and the other end is connected to the above-mentioned second pipeline; the above-mentioned pipeline includes a plurality of valves for controlling the flow of other substances in the pipeline, and the above-mentioned controller is further configured to control the on-off of the above-mentioned plurality of valves before the above-mentioned process starts, so that the gas entering from the gas inlet end of the above-mentioned first pipeline is transmitted through the third pipeline without passing through the source bottle; during the above-mentioned process, control the on-off of the above-mentioned plurality of valves, so that the gas entering from the gas inlet end of the above-mentioned first pipeline is transmitted through the source bottle without passing through the third pipeline.

[0160] In an alternative embodiment of the present invention, the semiconductor device further includes a vacuum pump; the pipeline further includes a fourth pipeline, one end of the fourth pipeline is connected to the process chamber, and the other end is connected to the vacuum pump; a mass flow controller is provided at the gas inlet end of the first pipeline; before the process starts, the on-off states of the plurality of valves are controlled such that the gas entering from the gas inlet end of the first pipeline is transmitted through the third pipeline without passing through the source bottle. The controller is configured to, before the process starts, control the mass flow controller to set the flow value required for process cleaning, and control the on-off states of the plurality of valves so that the gas entering from the gas inlet end of the first pipeline is transmitted to the process chamber through the third pipeline without passing through the source bottle.

[0161] In an alternative embodiment of the present invention, the corresponding valves are opened such that the gas entering from the gas inlet end of the first pipeline is transmitted to the process chamber through the third pipeline without passing through the source bottle. The controller is further configured to, after a preset time of gas transmission, control the on-off states of the plurality of valves so that the gas stops entering from the gas inlet end of the first pipeline, and turn on the vacuum pump to evacuate the pipeline to a vacuum state.

[0162] For the device embodiments, since they are basically similar to the method embodiments, the description is relatively simple. For the relevant parts, reference may be made to the corresponding descriptions in the method embodiments.

[0163] The embodiments in this specification are all described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the embodiments, reference may be made to each other.

[0164] Those skilled in the art should understand that the embodiments of the present invention can be provided as a method, a device, or a computer program product. Therefore, the embodiments of the present invention can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the embodiments of the present invention can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk memories, CD-ROMs, optical memories, etc.) that contain computer-usable program codes.

[0165] Embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each flow and / or block in the flowchart and / or block diagram, and the combination of flows and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal devices to generate a machine, such that the instructions executed by the processor of the computer or other programmable data processing terminal devices generate a device for implementing the functions specified in one or more flows Figure 1 one or more flows and / or blocks Figure 1 or one or more blocks

[0166] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal device to work in a specific manner, such that the instructions stored in the computer-readable memory generate a manufactured article including an instruction device that implements the functions specified in one or more flows Figure 1 one or more flows and / or blocks Figure 1 or one or more blocks

[0167] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device, such that a series of operation steps are executed on the computer or other programmable terminal device to generate a computer-implemented process, and thus the instructions executed on the computer or other programmable terminal device provide steps for implementing the functions specified in one or more flows Figure 1 one or more flows and / or blocks Figure 1 or one or more blocks

[0168] Although the preferred embodiments of embodiments of the present invention have been described, those skilled in the art can make additional changes and modifications once they know the basic creative concepts. Therefore, the appended claims are intended to be construed as including the preferred embodiments and all changes and modifications falling within the scope of embodiments of the present invention.

[0169] Finally, it should also be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, article or terminal device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or terminal device. Without further limitation, an element defined by the phrase "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or terminal device comprising the element.

[0170] The above has introduced in detail a method for controlling a reaction source of a semiconductor device and a semiconductor processing device provided by the present invention. Specific examples are used in this article to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A method for controlling a reaction source of a semiconductor device, characterized in that, The semiconductor device includes a source bottle, pipelines, and a process chamber; the pipelines include a first pipeline and a second pipeline. Among them, one end of the first pipeline is an air inlet end, and the other end is inserted into the source liquid in the source bottle; one end of the second pipeline is inserted above the liquid level in the source bottle, and the other end is communicated with the process chamber. And on the second pipeline, in the direction from the source bottle to the process chamber, a first pressure gauge and a position valve are sequentially arranged, and the first pressure gauge is used to detect the pressure of the source bottle; a second pressure gauge is arranged on the process chamber, and the second pressure gauge is used to detect the pressure of the process chamber. The method includes: During the process, obtain the current source bottle pressure value and the current process chamber pressure value monitored in real time; Obtain the fitting curve of the opening angle value of the position valve with the source bottle pressure value and the process chamber pressure value; the fitting curve is used to characterize the mapping relationship between the opening angle value of the position valve and the source bottle pressure value and the process chamber pressure value; According to the fitting curve, determine the target opening angle value of the position valve corresponding to the current source bottle pressure value and the current process chamber pressure value; According to the target opening angle value, control the position valve to adjust the opening angle.

2. The method according to claim 1, wherein The semiconductor device further includes a temperature controller, and the method further includes: When the opening angle value of the position valve reaches a preset angle threshold, control the temperature controller to increase the temperature of the source bottle.

3. The method according to claim 1, characterized in that, It further includes: Set the position valve at different opening angle values, and record the source bottle pressure value and the process chamber pressure value at the different opening angle values; According to the source bottle pressure value and the chamber pressure value at the different opening angle values, generate the fitting curve of the opening angle value with the source bottle pressure value and the chamber pressure value.

4. The method according to claim 3, wherein The setting the position valve at different opening angle values, and recording the source bottle pressure value and the process chamber pressure value at the different opening angle values includes: Obtain the initial value of the source bottle pressure value and the initial value of the process chamber pressure value corresponding to the position valve at the maximum opening angle value; Control the opening angle value of the position valve to decrease by a preset angle value, and record the current pressure value of the source bottle and the current pressure value of the process chamber; Judge whether the current opening angle value of the position valve reaches the preset angle value; If not, repeat the steps of controlling the opening angle value of the position valve to decrease by a preset angle value, and recording the current pressure value of the source bottle and the current pressure value of the process chamber; If it reaches, the recording ends.

5. The method according to claim 3, wherein The formula of the fitting curve is S = K1 * R1 * T1 / (G1 3 * V1) + K2 * G2 3 * V2 / (R2 * T2), the molecular weight n = K3 / S, where S is the valve opening angle, K1, K2, and K3 are self-learning coefficients, R1 and R2 are gas constants, V1 and V2 are volumes, G1 is the source bottle pressure, and G2 is the process chamber pressure.

6. The method according to claim 1, wherein The pipeline further includes a third pipeline. Among them, one end of the third pipeline is connected to the first pipeline, and the other end is connected to the second pipeline; a plurality of valves are arranged on the pipeline to control the flow of gas in the pipeline. The method further includes: Before the process starts, control the on-off of the plurality of valves so that the gas entering from the air inlet end of the first pipeline is transmitted through the third pipeline and does not pass through the source bottle; During the process, control the on-off of the plurality of valves so that the gas entering from the air inlet end of the first pipeline is transmitted through the source bottle and does not pass through the third pipeline.

7. The method according to claim 6, characterized in that The semiconductor device further includes a vacuum pump; the pipeline further includes a fourth pipeline, one end of the fourth pipeline is connected to the process chamber, and the other end is connected to the vacuum pump; a mass flow controller is provided at the gas inlet end of the first pipeline; before the process starts, controlling the opening and closing of the plurality of valves so that the gas entering from the gas inlet end of the first pipeline is transmitted through the third pipeline without passing through the source bottle, including: Before the process starts, controlling the mass flow controller to set the flow value required for process cleaning, and controlling the opening and closing of the plurality of valves so that the gas entering from the gas inlet end of the first pipeline is transmitted through the third pipeline to the process chamber without passing through the source bottle.

8. The method according to claim 7, characterized in that Controlling the opening and closing of the plurality of valves so that the gas entering from the gas inlet end of the first pipeline is transmitted through the third pipeline to the process chamber without passing through the source bottle further includes: After the preset time of gas transmission, controlling the opening and closing of the plurality of valves so that the gas stops entering from the gas inlet end of the first pipeline, and opening the vacuum pump to evacuate the pipeline to a vacuum state.

9. A semiconductor process equipment, characterized in that, The semiconductor process equipment includes a source bottle, a pipeline and a process chamber; the pipeline includes a first pipeline and a second pipeline, wherein one end of the first pipeline is a gas inlet end, and the other end is inserted into the source liquid of the source bottle; one end of the second pipeline is inserted above the liquid level in the source bottle, and the other end is communicated with the process chamber, and a first pressure gauge and a position valve are sequentially arranged on the second pipeline in the direction from the source bottle to the process chamber, and the first pressure gauge is used to detect the pressure of the source bottle; a second pressure gauge is arranged on the process chamber, and the second pressure gauge is used to detect the pressure of the process chamber, and the semiconductor process equipment further includes: A controller for obtaining the current source bottle pressure value and the current process chamber pressure value monitored in real time during the process; obtaining the fitting curve of the opening angle value of the position valve with the source bottle pressure value and the process chamber pressure value; the fitting curve is used to characterize the mapping relationship between the opening angle value and the source bottle pressure value and the process chamber pressure value; according to the fitting curve, determining the target opening angle value of the position valve corresponding to the current source bottle pressure value and the current process chamber pressure value; and controlling the position valve to adjust the opening angle according to the target opening angle value.

10. The semiconductor processing equipment according to claim 9, wherein, The position valve includes, A housing, the housing is a hollow chamber; Ventilation interfaces, there are two ventilation interfaces, which are respectively located on opposite sides of the housing, one end of the ventilation interface is inserted into the interior of the housing, and the other end is connected to the second pipeline; A valve plate, the valve plate is located inside the housing and between the two ventilation interfaces inside the housing, and the shape of the valve plate matches the cross-section of the housing; A servo motor, the servo motor is connected to the valve plate through a fixing member and is used to control the rotation angle of the valve plate; The controller is used to adjust the opening angle by controlling the rotation angle of the valve plate by the servo motor.

11. The semiconductor processing equipment according to claim 9, characterized in that, The semiconductor process equipment further includes: A heating tape, which is arranged circumferentially along the outer part of the source bottle and is used to raise the temperature of the source bottle; A temperature controller, which is used to receive the temperature-raising instruction sent by the controller and control the heating tape to raise the temperature according to the temperature-raising instruction; The controller is further used to send a temperature-raising instruction to the temperature controller when the opening angle value of the position valve reaches a preset angle threshold.

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