Plasma Enhanced Annealing Chamber for Wafer Outgassing

Abstract

Embodiments described herein provide a thermal substrate processing apparatus with in-situ cleaning capability. The apparatus described herein may include a thermal processing chamber that defines a processing volume and a substrate support that may be disposed within the processing volume. One or more remote plasma sources may be in fluid communication with the processing volume, and the remote plasma source may be configured to deliver plasma to the processing volume.

Description

[0001] This application is a divisional application of an invention patent application with an application date of April 10, 2017, application number 201780024464.8, and invention name “Plasma enhanced annealing chamber for wafer degassing”.

[0002] background Technical Field

[0003] Embodiments of the present disclosure generally relate to semiconductor processing chambers. More specifically, embodiments described herein relate to plasma enhanced annealing chambers for substrate outgassing. Background Art

[0004] Thermal treatment of semiconductor substrates is commonly employed in semiconductor manufacturing for a variety of purposes. Different types of thermal treatments include rapid thermal processing, laser processing, soak annealing, and the like. The temperatures employed during thermal treatments can be configured to change various properties of the substrate and materials disposed on the substrate. For example, dopant diffusion, crystalline material modification, and surface modification are just some of the types of processes that can be accomplished through thermal treatments.

[0005] During certain thermal processes, material may be outgassed from the substrate being thermally processed. The outgassed material is typically discharged from the processing volume of the thermal processing chamber, however, the outgassed material may also be deposited on the chamber walls and components disposed within the chamber. The deposited material may generate particles within the chamber and redeposit on the substrate, which may result in failure of the microelectronic device ultimately formed on the substrate. Cleaning of the chamber typically requires extended downtime during preventive maintenance, reducing the efficiency of the thermal process.

[0006] Therefore, there is a need in the art for an improved thermal processing chamber. Summary of the invention

[0007] In one embodiment, a substrate processing apparatus is provided. The apparatus includes a first thermal processing chamber, the first thermal processing chamber defining a first processing volume. A first substrate support may be disposed within the first processing volume, a first remote plasma source may be fluidly coupled to the first processing volume, and a first gas source may be fluidly coupled to the first remote plasma source. The apparatus also includes a second thermal processing chamber, the second thermal processing chamber defining a second processing volume. The second thermal processing chamber shares a wall with the first thermal processing chamber. A second substrate support may be disposed within the second processing volume, a second remote plasma source may be fluidly coupled to the second processing volume, and a second gas source may be fluidly coupled to the second remote plasma source. An exhaust device may also be fluidly coupled to the first processing volume and the second processing volume. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order that the manner in which the above-mentioned features of the present disclosure can be understood in detail, a more specific description of the present disclosure briefly summarized above may be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings are only exemplary embodiments and are therefore not to be considered as limiting the scope of the present disclosure, and other equally effective embodiments may be recognized.

[0009] Figure 1 A dual chamber thermal processing apparatus with a remote plasma source according to one embodiment described herein is schematically illustrated.

[0010] Figure 2 A dual chamber thermal processing apparatus with a remote plasma source according to one embodiment described herein is schematically illustrated.

[0011] Figure 3 A dual chamber thermal processing apparatus with a remote plasma source according to one embodiment described herein is schematically illustrated.

[0012] Figure 4 A dual chamber thermal processing apparatus with a remote plasma source according to one embodiment described herein is schematically illustrated.

[0013] Figure 5 A dual chamber thermal processing apparatus with a remote plasma source according to one embodiment described herein is schematically illustrated.

[0014] Figure 6 A dual chamber thermal processing apparatus with a remote plasma source according to one embodiment described herein is schematically illustrated.

[0015] Figure 7 A dual-chamber heat treatment apparatus according to another embodiment is schematically illustrated.

[0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0017] Embodiments described herein provide a thermal substrate processing apparatus with in-situ cleaning capability. The apparatus described herein may include a thermal processing chamber that defines a processing volume, and a substrate support may be disposed within the processing volume. One or more remote plasma sources may be in fluid communication with the processing volume, and the remote plasma source may be configured to deliver a cleaning plasma to the processing volume.

[0018] Figure 1A dual chamber thermal processing apparatus 100 with remote plasma sources 126, 132 is schematically illustrated according to one embodiment described herein. The apparatus 100 includes a first thermal processing chamber 102 that defines a first processing volume 110. The walls of the first chamber 102 (e.g., a first sidewall 120 and a first ceiling 118) further define the first processing volume 110. The walls 120 and the ceiling 118 may be formed of a material suitable for withstanding elevated processing temperatures. For example, the first chamber 102 may be formed of stainless steel, aluminum, or other suitable metallic materials. The surfaces of the first chamber 102 that define the processing volume 110 may be coated with various materials to enhance or avoid deposition on the surfaces in certain embodiments. Although not illustrated, it is also contemplated that various processing accessories, shields, and the like may be disposed within the first processing volume 110 to further improve particle management and thermal processing of substrates.

[0019] The first processing volume 110 can be configured to perform thermal processing on a substrate disposed in the first processing volume 110 by heating the substrate to a temperature above about 400° C., such as between about 700° C. and about 1200° C., such as between about 850° C. and about 1100° C. A first substrate support 106 is disposed within the first processing volume 110. The first substrate support 106 can be configured to hold the substrate on the first substrate support 106 during thermal processing by various methods, such as vacuum suction or electrostatic suction. It is also contemplated that the substrate can be positioned and / or held on the first substrate support 106 by various other means, such as by rings, pins, and the like. The first substrate support 106 can also include a resistive heating device, such as a coil or the like, to facilitate heating of a substrate disposed on the first substrate support 106. Other heating methods, such as electromagnetic energy from a lamp, can be used in conjunction with the resistive heating device to heat the substrate.

[0020] The first remote plasma source 126 may be coupled to the first processing volume 110 and in fluid communication with the first processing volume 110. The first remote plasma source 126 may be configured to generate plasma remotely from the first processing volume 110 and deliver plasma products to the first processing volume 110. Although not shown, the first remote plasma source 126 may be coupled to an RF power source. It is contemplated that the first remote plasma source 126 may be a capacitively coupled plasma generator or an inductively coupled plasma generator depending on the desired plasma characteristics and chamber configuration. Various other plasma generating devices such as RF chokes or grounding devices and the like are not shown to avoid obscuring the illustrated embodiments.

[0021] The plasma products may be delivered to the first processing volume 110 via a first conduit 130 that is fluidly coupled to the first remote plasma source 126 and the first processing volume 110. In one embodiment, the first conduit 130 may extend from the first remote plasma source 126 to the first ceiling 118 of the first chamber 102. The first conduit 130 may be a conduit of any suitable shape and may be formed of a material that is primarily inert to the plasma products generated by the first remote plasma source 126. In one embodiment, the first conduit 130 may be formed of a quartz material, a ceramic material, or a metal material. The surface of the first conduit 130 that is exposed to the plasma products may also be coated with various materials that are inert or substantially inert to the plasma products to reduce or prevent damage, erosion, or deposition of the first conduit 130.

[0022] The first remote plasma source 126 may also be in fluid communication with a first gas source 128. The first gas source 128 delivers one or more precursor gases to the first remote plasma source 126. The first gas source 128 may deliver a precursor gas such as a gas containing argon, oxygen, nitrogen, helium, and fluorine, for example nitrogen trifluoride or the like. The precursor gases may be delivered to the first remote plasma source 126 individually or in combination and / or sequentially or simultaneously.

[0023] In operation, material may be outgassed from the thermally processed substrate, and the material may ultimately deposit and accumulate on the surfaces of the first chamber 102. In certain embodiments, it may be desirable to remove the deposits, and a suitable precursor gas may be selected to deliver the precursor gas from the first gas source 128 to the first remote plasma source 126. The first remote plasma source 126 may generate a plasma and deliver the plasma / plasma products to the first processing volume 110 through the first conduit 130. Although not shown, various liners, diffusers, and / or showerheads may receive the plasma / plasma products and distribute the plasma / plasma products throughout the first processing volume 110 to facilitate cleaning of the first processing volume 110.

[0024] Material outgassed from the thermally processed substrate and material removed from the surface of the first chamber 102 by the plasma may be exhausted from the first processing volume 110 to an exhaust 116 via an exhaust conduit 114. The exhaust 116 may be a pump, such as a turbo pump, configured to create a reduced pressure environment in the first processing volume 110 and remove gases and other materials from the first processing volume 110.

[0025] The apparatus 100 also includes a second processing chamber 104 that is substantially identical to the first processing chamber 102. The second processing chamber 104 defines a second processing volume 112, has a second sidewall 124 and a second top plate 122, and may have a second substrate support 108 disposed in the second processing chamber 104. The material and structure of the second processing chamber 104 may be the same or substantially similar to the material and structure of the first processing chamber 102.

[0026] In one embodiment, the first processing chamber 102 and the second processing chamber 104 share a common wall. In such an embodiment, the sidewall 120A of the first processing chamber 102 and the sidewall 124A of the second processing chamber 104 are joined, or are the same wall.

[0027] The second remote plasma source 132 may be coupled to the second processing volume 112 and in fluid communication with the second processing volume 112. The second remote plasma source 132 may be configured to generate plasma remotely from the second processing volume 112 and to deliver plasma products to the second processing volume 112. The plasma products may be delivered to the second processing volume 112 via a second conduit 136, which is fluidly coupled to the second remote plasma source 132 and the second processing volume 112. In one embodiment, the second conduit 136 may extend from the second remote plasma source 132 to the second ceiling 122 of the second chamber 104. The second conduit 136 may be a conduit of any suitable shape and may be formed of a material that is primarily inert to the plasma products generated by the second remote plasma source 132. In one embodiment, the second conduit 136 may be formed of a quartz material, a ceramic material, or a metal material. The surface of the second conduit 136 exposed to the plasma products may also be coated with various materials that are inert or substantially inert to the plasma products to reduce or prevent damage, erosion, or deposition of the second conduit 136.

[0028] The second plasma source 132 may also be in fluid communication with a second gas source 134. The second gas source 134 delivers one or more precursor gases to the second remote plasma source 132. In one embodiment, the first gas source 128 and the second gas source 134 are separate gas sources. In another embodiment, the first gas source 128 and the second gas source 134 are the same gas source. In either of these two embodiments, the first gas source 128 and the second gas source 134 may be configured to deliver any desired combination of precursor gases. In one embodiment, the second gas source 134 may deliver a precursor gas such as a gas containing argon, oxygen, nitrogen, helium, and fluorine, such as nitrogen trifluoride or the like. The precursor gases may be delivered to the second remote plasma source 132 individually or in combination and / or sequentially or simultaneously.

[0029] In operation, material may be outgassed from the heat treated substrate, and the material may ultimately be deposited and accumulated on the surfaces of the second chamber 104. As previously described, it may be desirable to remove the deposits, and a suitable precursor gas may be selected to deliver the precursor gas from the second gas source 134 to the second remote plasma source 132. The second remote plasma source 132 may generate plasma and deliver the plasma / plasma products to the second processing volume 112 through the second conduit 136. Although not shown, various liners, diffusers, and / or showerheads may receive the plasma / plasma products and distribute the plasma / plasma products throughout the second processing volume 112 to facilitate cleaning of the second processing volume 112.

[0030] The second processing volume 112 is also connected to the exhaust device 116 through the exhaust conduit 114. Therefore, the first processing volume 110 and the second processing volume 112 are pumped together through the exhaust device 116. It is contemplated that the exhaust device 116 can create a reduced pressure environment in the second processing volume 112 that is similar or identical to the reduced pressure environment of the first processing volume 110. Because the exhaust device 116 is in fluid communication with the first processing volume 110 and the second processing volume 112, the exhaust conduit 114 couples the two processing volumes 110, 112 to the exhaust device 116. The exhaust conduit 114 can be coupled to the first chamber 102 and the second chamber 104 through the sidewalls 120, 124 or the bottom of the chamber 102, 104 disposed relative to the top plate 118, 122.

[0031] Figure 2 A dual chamber thermal processing apparatus 200 having a remote plasma source 202 is schematically illustrated according to one embodiment described herein. In the illustrated embodiment, the remote plasma source 202 is in fluid communication with the first processing volume 110 and the second processing volume 112. The remote plasma source 202 may be fluidly coupled to the first processing volume 110 via a first conduit 208, and may also be fluidly coupled to the second processing volume 112 via a second conduit 206. In one embodiment, the first conduit 208 may extend from the remote plasma source 202 to the first ceiling 118 of the first chamber 102, and the second conduit 206 may extend from the remote plasma source 202 to the second ceiling 122 of the second chamber 104. A gas source 204 may be in fluid communication with the remote plasma source 202 and deliver various precursors to the remote plasma source 202. The gas source 204 may be a single gas source or may be configured to provide a plurality of different gases.

[0032] The remote plasma source 202 may generate a quantity of plasma / plasmas suitable for supplying the first processing volume 110 and the second processing volume 112. In one embodiment, a single precursor may be delivered from the gas source 204 to the remote plasma source 202, and a plasma may then be generated and delivered to the processing volumes 110, 112. In another embodiment, multiple precursors may be delivered simultaneously from the gas source to the remote plasma source 202, and plasmas of the precursors may be generated and delivered to the processing volumes 110, 112.

[0033] In yet another embodiment, a first precursor may be delivered to the remote plasma source 202, and the resulting plasma may be delivered to the processing volumes 110, 112. Subsequently, a second precursor, different from the first precursor, may be delivered to the remote plasma source 202 from the gas source 204, and the resulting plasma may be delivered continuously to the processing volumes 110, 112. It should be understood that any combination of precursors may be delivered from the gas source 204 to the remote plasma source 202 in any order (i.e., sequentially, simultaneously). The plasma and plasma products generated by the remote plasma source 202 may be delivered to the processing volumes 110, 112 continuously or in a pulsed manner.

[0034] The remote plasma source 202 may be similar to Figure 1 The first plasma source 126 or the second plasma source 132 of the illustrated embodiment. Similarly, the first conduit 208 and the second conduit 206 can be formed of the same or similar materials as the first conduit 130 or the second conduit 136. In operation, the first chamber 102 and the second chamber 104 can thermally process substrates. After performing the thermal treatment, the remote plasma source 202 generates a clean plasma and transmits the plasma and plasma products to the processing volumes 110, 112 of each of the first chamber 102 and the second chamber 104. The plasma products and other effluents can be exhausted from the processing volumes 110, 112 through the exhaust device 116.

[0035] Figure 3 A dual chamber thermal processing apparatus 300 with remote plasma sources 320, 310 is schematically illustrated according to one embodiment described herein. In the illustrated embodiment, the first plasma source 302 may be in fluid communication with the first chamber 102 via a first conduit 306, and in fluid communication with the second chamber 104 via a second conduit 308. In one embodiment, the first conduit 306 may extend from the first remote plasma source 302 and a first ceiling of the first chamber 102, and the second conduit 308 may extend from the first remote plasma source 302 and a second ceiling 122 of the second chamber 104. The first remote plasma source 302 is also in fluid communication with the first gas source 304.

[0036] The second remote plasma source 310 may be in fluid communication with the second chamber 104 via a third conduit 314 and in fluid communication with the first chamber 102 via a fourth conduit 316. In one embodiment, the third conduit 314 may extend from the second remote plasma source 310 to a second ceiling of the second chamber 104, and the fourth conduit 316 may extend from the second remote plasma source 310 to a first ceiling 118 of the first chamber 102. A second gas source 312 is in fluid communication with the second remote plasma source 310. The second gas source 312 may be configured to deliver any of the precursors previously described to the second remote plasma source 310. The second remote plasma source 310 may generate plasma and deliver plasma products to both the second chamber 104 and the first chamber 102.

[0037] Similarly, the first gas source may be configured to deliver any of the previously described precursors to the first remote plasma source 302. The first remote plasma source 302 may generate a plasma and deliver the plasma product to both the first chamber 102 and the second chamber 104. The first remote plasma source 302 and the second remote plasma source 310 may generate any type or combination of cleaning plasmas and deliver the plasma products in any desired manner, such as pulsed delivery, alternating plasma type delivery, or continuous delivery of one or more plasma types. In one embodiment, the first remote plasma source 302 may generate a first plasma type and deliver the plasma product to the chambers 102, 104. The second remote plasma source 310 may generate a second plasma type different from the first plasma type and deliver the plasma product to the chambers 102, 104.

[0038] Figure 4 A dual chamber thermal processing apparatus 400 having remote plasma sources 402, 408, 414, 420 is schematically illustrated according to one embodiment described herein. In the illustrated embodiment, the first remote plasma source 402 may be in fluid communication with the first processing volume 110 of the first chamber 102 via a first conduit 406. In one embodiment, the first conduit 406 may extend from the remote plasma source 402 to the first ceiling 118 of the first chamber 102. The first remote plasma source 402 is also in fluid communication with the first gas source 404. The second remote plasma source 408 may also be in fluid communication with the first processing volume 110 of the first chamber 102 via a second conduit 412. In one embodiment, the second conduit 412 may extend from the second remote plasma source 408 to the first ceiling 118 of the first chamber 102. The second remote plasma source 408 is also in fluid communication with the second gas source 410.

[0039] The gas sources 404, 410 may provide any of the previously described precursors in any combination to the remote plasma sources 402, 408. In one embodiment, the first gas source 404 may provide a first precursor to the first remote plasma source 402, and a first plasma may be generated and delivered to the first processing volume 110. The second gas source 410 may provide a second precursor different from the first precursor to the second remote plasma source 408, and a second plasma may be generated and delivered to the first processing volume 110.

[0040] For example, the first gas source 404 may deliver argon, helium, or a combination of argon and nitrogen to the first remote plasma source 402. The first remote plasma source 402 may generate a first plasma remote from the first processing volume 110 and deliver plasma products (i.e., radicals and / or ions) to the first processing volume 110 via the first conduit 406. The second gas source 410 may deliver oxygen, NF 3 or oxygen and NF 3 The first and second plasmas may be delivered to the first processing volume 110 simultaneously, in an alternating manner, or in any desired order, to clean the first chamber 102 and an object disposed in the first chamber 102.

[0041] Similarly, the third remote plasma source 414 may be in fluid communication with the second processing volume 112 of the second chamber 104 via a third conduit 418. In one embodiment, the third conduit 418 may extend from the third remote plasma source 414 to the second ceiling 122 of the second chamber 104. The third remote plasma source 414 is also in fluid communication with a third gas source 416. In one embodiment, the third gas source 416 may be similar to the first gas source 404. The fourth remote plasma source 420 may also be in fluid communication with the second processing volume 112 of the second chamber 104 via a fourth conduit 424. In one embodiment, the fourth conduit 424 may extend from the fourth remote plasma source 420 to the second ceiling 122 of the second chamber 104. The fourth remote plasma source 420 is also in fluid communication with a fourth gas source 422. In one embodiment, the fourth gas source 422 may be similar to the second gas source 410. It is contemplated that the third and fourth remote plasma sources 414 and 420 and the third and fourth gas sources 416 and 422 may be implemented and operated similarly to the first and second remote plasma sources 402 and 408 and the first and second gas sources 404 and 410 .

[0042] Figure 5A dual chamber thermal processing apparatus 500 having remote plasma sources 502, 508, 514 is schematically illustrated according to one embodiment described herein. In the illustrated embodiment, the first remote plasma source 502 can be in fluid communication with the first processing volume 110 of the first chamber 102 via a first conduit 506. In one embodiment, the first conduit 506 can extend from the first plasma source 502 and the first ceiling 118 of the first chamber 102. A first gas source 504 is also in fluid communication with the first remote plasma source 502. The first gas source 504 can deliver a first precursor type to the first remote plasma source 502, and the first remote plasma source 502 can generate and deliver a plasma product to the first processing volume 110.

[0043] Similarly, the second remote plasma source 508 can be in fluid communication with the second processing volume 112 of the second chamber 104 via a second conduit 512. In one embodiment, the second conduit 512 can extend from the second plasma source 508 and the second ceiling 122 of the second chamber 104. A second gas source 510 is also in fluid communication with the second remote plasma source 508. The second gas source 510 can deliver a second precursor type to the second remote plasma source 508, and the second remote plasma source 508 can generate and deliver plasma products to the second processing volume 112. In one embodiment, the second precursor type can be the same as the first precursor type. In another embodiment, the second precursor type can be different from the first precursor type.

[0044] The third remote plasma source 514 is in fluid communication with the first processing volume 110 and the second processing volume 112 of the first chamber 102 and the second chamber 104, respectively, via a third conduit 518. Thus, the third conduit 518 fluidly couples the first processing volume 110 and the second processing volume 112 to the third remote plasma source 514. In the illustrated embodiment, the third conduit 518 extends between the third remote plasma source 514 and the first sidewall 120 of the first chamber 102 and the second sidewall 124 of the second chamber 104. The location at which the third conduit 518 is coupled to the sidewalls 120, 124 may be in a plane that is higher than the plane occupied by the slit valve (not shown) (i.e., closer to the first top plate 118). In another embodiment, the third conduit 518 may extend between the third remote plasma source 514 and the first top plate 118 and the second top plate 122 of the first chamber 102 and the second chamber 104, respectively.

[0045] The third gas source 516 may also be in fluid communication with the third remote plasma source 514. The third gas source 516 may deliver any desired precursor type to the third remote plasma source 514. In one embodiment, the third gas source 516 may deliver a third precursor type that is similar to the first and second precursor types provided by the first and second gas sources 504, 510. In another embodiment, the third gas source 516 may deliver a third precursor type that is different from the first and second precursor types.

[0046] Injecting remote plasma into the sidewalls 120 and 124 of the processing chambers 102 and 104 enables the delivery of gas from the remote plasma source 514 below the substrate supports 106 and 108, respectively. If the remote plasma source 514 delivers a cleaning gas, and the substrate supports 106 and 108 are actuated in an axial direction, the substrate supports 106 and 108 may be extended so that the support area of ​​the substrate supports is above the inlet of the gas from the remote plasma unit 514, exposing the lower area of ​​the processing chambers 102 and 104 to the cleaning gas. In this way, one or both of the processing chambers 102 and 104 may be cleaned in the lower area of ​​the chamber.

[0047] Figure 6 A dual chamber thermal processing apparatus 600 having remote plasma sources 602, 608, 614, 620 is schematically illustrated according to one embodiment described herein. In the illustrated embodiment, the first remote plasma source 602 can be in fluid communication with the first processing volume 110 of the first chamber 102 via a first conduit 606. In one embodiment, the first conduit 606 can extend from the first plasma source 602 and the first ceiling 118 of the first chamber 102. A first gas source 604 is also in fluid communication with the first remote plasma source 602. The first gas source 604 can deliver a first precursor type to the first remote plasma source 602, and the first remote plasma source 602 can generate and deliver a plasma product to the first processing volume 110.

[0048] Similarly, the second remote plasma source 608 can be in fluid communication with the second processing volume 112 of the second chamber 104 via a second conduit 612. In one embodiment, the second conduit 612 can extend from the second plasma source 608 and the second ceiling 122 of the second chamber 104. A second gas source 610 is also in fluid communication with the second remote plasma source 608. The second gas source 610 can deliver a second precursor type to the second remote plasma source 608, and the second remote plasma source 608 can generate and deliver plasma products to the second processing volume 112. In one embodiment, the second precursor type can be the same as the first precursor type. In another embodiment, the second precursor type can be different from the first precursor type.

[0049] The third remote plasma source 614 is in fluid communication with the first processing volume 110 via a third conduit 618. In the illustrated embodiment, the third conduit 618 extends between the third remote plasma source 614 and the first sidewall 120 of the first chamber 102. The location at which the third conduit 618 is coupled to the first sidewall 120 may be in a plane that is higher than a plane occupied by a slit valve (not shown) (i.e., closer to the first top plate 118).

[0050] The third gas source 616 may also be in fluid communication with the third remote plasma source 614. The third gas source 616 may deliver any desired precursor type to the third remote plasma source 614. In one embodiment, the third gas source 616 may deliver a third precursor type that is similar to the first and second precursor types provided by the first and second gas sources 604, 610. In another embodiment, the third gas source 616 may deliver a third precursor type that is different from the first and second precursor types.

[0051] The fourth remote plasma source 620 is in fluid communication with the second processing volume 112 via a fourth conduit 624. In the illustrated embodiment, the fourth conduit 624 extends between the fourth remote plasma source 620 and the second sidewall 124 of the second chamber 104. The location at which the fourth conduit 624 is coupled to the second sidewall 124 may be higher than a plane occupied by a slit valve (not shown) (i.e., in a plane closer to the second top plate 122).

[0052] The fourth gas source 622 may also be in fluid communication with the fourth remote plasma source 620. The fourth gas source 622 may deliver any desired precursor type to the fourth remote plasma source 620. In one embodiment, the fourth gas source 622 may deliver a fourth precursor type that is similar to the first precursor type, the second precursor type, and the third precursor type provided by the first gas source 604, the second gas source 610, and the third gas source 616. In another embodiment, the fourth gas source 622 may deliver a fourth precursor type that is different from the first precursor type, the second precursor type, and the third precursor type. In one embodiment, the first gas source 604 and the second gas source 610 may deliver a first precursor type, and the third gas source 606 and the fourth gas source 622 may deliver a second precursor type that is different from the first precursor type.

[0053] Embodiments described herein provide an improved thermal processing chamber with integrated plasma cleaning capabilities, and associated apparatus suitable for performing such processing. Thus, in-situ plasma cleaning of non-plasma processing thermal chambers can be achieved. Various embodiments can be used in conjunction with one another, and certain aspects from certain embodiments can be combined with certain aspects from other embodiments, all of which are within the contemplation of the present disclosure.

[0054] In one embodiment, a substrate processing apparatus is provided, comprising: a first thermal processing chamber, the first thermal processing chamber defining a first processing volume; a second thermal processing chamber, the second thermal processing chamber defining a second processing volume; a first remote plasma source, the first remote plasma source coupled to the first thermal processing chamber through a first plasma conduit; an exhaust device, the exhaust device coupled to the first thermal processing chamber through a first exhaust conduit, and coupled to the second thermal processing chamber through a second exhaust conduit; a common exhaust conduit, the common exhaust conduit coupling the first exhaust conduit and the second exhaust conduit to the exhaust device; a total exhaust flow controller, the total exhaust flow controller is disposed in the common exhaust conduit; and a chamber exhaust flow controller, the chamber exhaust flow controller is disposed in the second exhaust conduit. The above apparatus may further include: a first pressure sensor disposed in the first thermal processing chamber, and a second pressure sensor disposed in the second thermal processing chamber. The above apparatus may further include: a controller, the controller coupled to the first pressure sensor and the second pressure sensor, the total exhaust flow controller, and the chamber exhaust flow controller. The above-mentioned device may further include: a second remote plasma source, the second remote plasma source is coupled to the second thermal treatment chamber through a third conduit, wherein the first remote plasma source is also coupled to the second thermal treatment chamber through a second plasma conduit. The above-mentioned device may further include: a plasma flow controller, the plasma flow controller is arranged in the second plasma conduit. The above-mentioned device may further include: a first component sensor arranged in the first thermal treatment chamber, and a second component sensor arranged in the second thermal treatment chamber, wherein a first gas source is coupled to the first remote plasma source through a first source conduit, a second gas source is coupled to the second remote plasma source through a second source conduit, a first source flow controller is arranged in the first source conduit, and a second source flow controller is arranged in the second source conduit. In the above-mentioned device, the controller may also be coupled to the plasma flow controller, the first source flow controller, the second source flow controller, the first component sensor and the second component sensor.

[0055] In one embodiment, a substrate processing apparatus is provided, comprising: a first thermal processing chamber, the first thermal processing chamber defining a first processing volume; a second thermal processing chamber, the second thermal processing chamber defining a second processing volume; a first remote plasma source, the first remote plasma source coupled to the first thermal processing chamber through a first plasma conduit; a second remote plasma source, the second remote plasma source coupled to the second thermal processing chamber through a second plasma conduit; a carrier gas source, the carrier gas source coupled to the first thermal processing chamber through a first carrier gas conduit and coupled to the second thermal processing chamber through a second carrier gas conduit; an exhaust device, the exhaust device coupled to the first thermal processing chamber through a first exhaust conduit and coupled to the second thermal processing chamber through a second exhaust conduit; a common exhaust conduit, the common exhaust conduit coupling the first exhaust conduit and the second exhaust conduit to the exhaust device; a total exhaust flow controller, the total exhaust flow controller is disposed in the common exhaust conduit; a chamber exhaust flow controller, the chamber exhaust flow controller is disposed in the second exhaust conduit; a first pressure sensor, the first pressure sensor is disposed in the first thermal processing chamber; and a second pressure sensor, the second pressure sensor is disposed in the second thermal processing chamber. The above-mentioned device may further include: a first gas source, coupled to the first remote plasma source through a first source conduit; and a second gas source, coupled to the second remote plasma source through a second source conduit, wherein the carrier gas source is also coupled to the first source conduit and the second source conduit. In the above-mentioned device, the carrier gas source may be coupled to the first source conduit through a first carrier gas flow controller, and the carrier gas source may be coupled to the second source conduit through a second carrier gas flow controller. The above-mentioned device may further include: a third remote plasma source coupled to the first thermal treatment chamber, a fourth remote plasma source coupled to the second thermal treatment chamber, a third gas source coupled to the third remote plasma source through a third source conduit, and a fourth gas source coupled to the fourth remote plasma source through a fourth source conduit, wherein the carrier gas source is also coupled to the third source conduit through the first carrier gas flow controller, and the carrier gas source is also coupled to the fourth source conduit through the second carrier gas flow controller. The above-mentioned device may further include: a controller, which is coupled to the total exhaust flow controller, the chamber exhaust flow controller, the first pressure sensor, the second pressure sensor, the first carrier gas flow controller and the second carrier gas flow controller, wherein the first carrier gas flow controller is a three-way valve and the second carrier gas flow controller is a three-way valve.

[0056] In one embodiment, a substrate processing apparatus is provided, comprising: a first thermal processing chamber, the first thermal processing chamber defining a first processing volume; a second thermal processing chamber, the second thermal processing chamber defining a second processing volume; a first remote plasma source, the first remote plasma source being coupled to the first thermal processing chamber through a first plasma conduit, and being coupled to the second thermal processing chamber through a second plasma conduit; an exhaust device, the exhaust device being coupled to the first thermal processing chamber through a first exhaust conduit, and being coupled to the second thermal processing chamber through a second exhaust conduit; a common exhaust conduit, the common exhaust conduit coupling the first exhaust conduit and the second exhaust conduit to the exhaust device; a total exhaust flow controller, the total exhaust flow controller being disposed in the common exhaust conduit; a chamber exhaust flow controller, the chamber exhaust flow controller being disposed in the second exhaust conduit; a first pressure sensor, the first pressure sensor being disposed in the first thermal processing chamber; and a second pressure sensor, the second pressure sensor being disposed in the second thermal processing chamber. The apparatus may further include: a controller coupled to the total exhaust flow controller, the chamber exhaust flow controller, the first pressure sensor, the second pressure sensor, and a second remote plasma source, wherein the second remote plasma source is coupled to the second thermal processing chamber. The apparatus may further include: a first component sensor disposed in the first thermal processing chamber; and a second component sensor disposed in the second thermal processing chamber, wherein the controller is further coupled to the first component sensor and the second component sensor.

[0057] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims that follow.

Claims

1. A substrate processing device, comprising: a first processing chamber defining a first processing volume; a second processing chamber defining a second processing volume; a first remote plasma source coupled to the first processing chamber via a first plasma conduit configured to deliver plasma from the first remote plasma source to a first showerhead disposed in the first processing volume; a second plasma conduit coupled between the first remote plasma source and the second processing chamber, the second plasma conduit configured to deliver the plasma from the first remote plasma source to a second showerhead disposed in the second processing volume; a second remote plasma source, the second remote plasma source coupled to the second processing chamber via a third plasma conduit; an exhaust device coupled to the first processing chamber via a first exhaust conduit and coupled to the second processing chamber via a second exhaust conduit; a common discharge conduit coupling the first discharge conduit and the second discharge conduit to the discharge device; a total discharge flow controller, the total discharge flow controller being disposed in the common discharge conduit; and A chamber exhaust flow controller is disposed in the first exhaust conduit.

2. The apparatus of claim 1 , further comprising: a first plasma flow controller disposed in the first plasma conduit; a second plasma flow controller disposed in the second plasma conduit; and a controller coupled to the first plasma flow controller and the second plasma flow controller, the total exhaust flow controller, and the chamber exhaust flow controller.

3. The apparatus of claim 1, further comprising: a first pressure sensor disposed in the first processing chamber, and a second pressure sensor disposed in the second processing chamber.

4. The apparatus of claim 3, further comprising: a controller coupled to the first pressure sensor and the second pressure sensor, the total exhaust flow controller, and the chamber exhaust flow controller.

5. The device of claim 4, further comprising: a first composition sensor disposed in the first processing chamber, and a second composition sensor disposed in the second processing chamber, wherein a first gas source is coupled to the first remote plasma source via a first source conduit; a second gas source coupled to the second remote plasma source via a second source conduit; a first source flow controller disposed in the first source conduit; and A second source flow controller is disposed in the second source conduit.

6. The apparatus of claim 5, wherein the controller is also coupled to the first source flow controller, the second source flow controller, the first composition sensor, and the second composition sensor.

7. A substrate processing device, comprising: A first processing chamber that defines a first processing volume; A second processing chamber that defines a second processing volume; A first remote plasma source coupled to the first processing chamber through a first plasma conduit configured to convey plasma from the first remote plasma source to a first showerhead disposed in the first processing volume; A second plasma conduit coupled between the first remote plasma source and the second processing chamber and configured to convey the plasma from the first remote plasma source to a second showerhead disposed in the second processing volume; A second remote plasma source coupled to the second processing chamber through a third plasma conduit configured to convey plasma from the second remote plasma source to the second showerhead; A carrier gas source coupled to the first processing chamber through a first carrier gas conduit and to the second processing chamber through a second carrier gas conduit; An exhaust device coupled to the first processing chamber through a first exhaust conduit and to the second processing chamber through a second exhaust conduit; A common exhaust conduit coupling the first exhaust conduit and the second exhaust conduit to the exhaust device; A total exhaust flow controller disposed in the common exhaust conduit; A chamber exhaust flow controller disposed in the first exhaust conduit; A first pressure sensor disposed in the first processing chamber; and A second pressure sensor disposed in the second processing chamber.

8. The apparatus of claim 7, further comprising: a plasma flow controller disposed in the second plasma conduit.

9. The apparatus of claim 8, further comprising: a first gas source coupled to the first remote plasma source through a first source conduit; and a second gas source coupled to the second remote plasma source through a second source conduit, wherein the carrier gas source is also coupled to the first source conduit and the second source conduit.

10. The apparatus of claim 9, wherein the carrier gas source is coupled to the first source conduit through a first carrier gas flow controller and to the second source conduit through a second carrier gas flow controller.

11. The apparatus of claim 10, further comprising: A third remote plasma source coupled to the first processing chamber; A fourth remote plasma source coupled to the second processing chamber; A third gas source coupled to the third remote plasma source through a third source conduit; and A fourth gas source is coupled to the fourth remote plasma source through a fourth source conduit, wherein the carrier gas source is also coupled to the third source conduit through the first carrier gas flow controller, and the carrier gas source is also coupled to the fourth source conduit through the second carrier gas flow controller.

12. The apparatus of claim 11, further comprising: A controller coupled to the total exhaust flow controller, the chamber exhaust flow controller, the first pressure sensor, the second pressure sensor, the plasma flow controller, the first carrier gas flow controller, and the second carrier gas flow controller, wherein the first carrier gas flow controller is a three-way valve and the second carrier gas flow controller is a three-way valve.

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