Method for processing substrate and system for processing substrate

Abstract

The present invention relates to a method for processing a substrate and a system for processing a substrate. The substrate has a first side (4) and a second side (14) opposite to the first side (4). The method comprises: attaching a protective film (16) to the first side (4) of the substrate (2); and after attaching the protective film (16) to the first side (4) of the substrate (2), processing the substrate (2) from the second side (14) of the substrate (2). After processing the substrate (2) from the second side (14) of the substrate (2), inspecting the second side (14) of the substrate (2) for defects from the second side (14) of the substrate (2). After inspecting the defects of the second side (14) of the substrate (2), attaching a supporting film (34) to the second side (14) of the substrate (2). In addition, the method comprises: removing the protective film (16) from the first side (4) of the substrate (2); and after removing the protective film (16) from the first side (4) of the substrate (2), inspecting the defects of the first side (4) of the substrate (2) from the first side (4) of the substrate (2). The invention also relates to a substrate processing system for performing the method.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of German patent application No. 102021 203911.1, filed with the German Patent and Trademark Office on April 20, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a method for processing a substrate, such as a wafer, the substrate having a first side and a second side opposite to the first side. Furthermore, the present invention relates to a system for performing the method. Background Art

[0004] The processing of substrates (e.g., wafers) must generally be performed with a high degree of accuracy, efficiency, and reliability. For example, in a device manufacturing process, such as for the production of semiconductor devices, a substrate (e.g., a wafer) having a device area (device area) is divided into individual chips (chips) or dies, the device area having a plurality of devices generally separated by a plurality of dividing lines. The manufacturing process generally includes: a grinding step for adjusting the thickness of the substrate; and a cutting step for cutting the substrate along the dividing lines to obtain individual chips or dies. The grinding step is performed from the back side of the substrate, opposite to the front side of the substrate where the device area is formed. In addition, other processing steps, such as polishing and / or etching, may also be performed on the back side of the substrate. The substrate may be cut along the dividing lines from the front side of the substrate or the back side of the substrate. In order to ensure the high quality of the resulting chips or dies, the processing steps must be performed in an accurate and reliable manner.

[0005] When processing substrates, such as during singulation (e.g., dicing) of the substrates, defects may occur that may affect the quality of the singulated substrates, particularly in the case of singulation of the substrates into chips or dies. These possible defects may include: front side chipping, back side chipping, delamination of layers formed on or in the substrate material, cracks, non-straight cut lines (zigzags), burrs, whiskers, particles, contaminants, die shifting, die size differences, and unseparated dies (i.e., dies that are not completely separated from each other). This problem is particularly evident in the case of high-end devices that need to meet critical quality standards.

[0006] In order to solve the above problems, in some conventional processing methods, defects of the substrate are inspected after processing. Such defect inspection (e.g., detecting whether the size of the chipping is within an acceptable range) can be performed outside or inside the processing equipment used. For example, a camera installed in the processing equipment can be used for this purpose.

[0007] However, conventional methods only allow defects on one side of the substrate to be identified. In particular, if the front side of the substrate is exposed, only front side inspection is possible, and if the back side of the substrate is exposed, only back side inspection is possible. Therefore, there is a problem that defects may not be detected with a high degree of accuracy and reliability, which is particularly important in the case of, for example, high-end devices. In addition, it may be difficult to track where and when defects occur during processing.

[0008] Therefore, there remains a need for an efficient method of processing a substrate, and an efficient substrate processing system, which allow defects in a substrate to be accurately and reliably identified. Summary of the invention

[0009] Therefore, the object of the present invention is to provide an effective method for processing a substrate, which allows defects in the substrate to be accurately and reliably identified. In addition, the present invention aims to provide a substrate processing system for performing the method. These objectives are achieved by a substrate processing method according to an embodiment of the present invention, and by a substrate processing system according to an embodiment of the present invention. The present invention also provides some preferred embodiments.

[0010] The present invention provides a method for processing a substrate having a first side or surface and a second side or surface opposite to the first side or surface. The method includes: attaching a protective film to the first side of the substrate; after attaching the protective film to the first side of the substrate, processing the substrate from the second side of the substrate; and after processing the substrate from the second side of the substrate, inspecting the second side of the substrate for defects from the second side of the substrate. In addition, the method includes: after inspecting the defects of the second side of the substrate, attaching a support film to the second side of the substrate; removing the protective film from the first side of the substrate; and after removing the protective film from the first side of the substrate, inspecting the defects of the first side of the substrate from the first side of the substrate.

[0011] In the method of the present invention, after processing, the substrate is inspected for defects from both sides, i.e., from the first side of the substrate and from the second side of the substrate. Thus, any defects in the substrate caused by processing can be accurately and reliably identified. Furthermore, since defect information from both sides of the substrate is obtained, the nature of any one or more identified defects can be determined more accurately. This also improves the traceability of defects, thereby enabling a more accurate and reliable assessment of where and when defects occurred during processing.

[0012] After the protective film has been removed from the first side of the substrate, the first side of the substrate is inspected for defects from the first side of the substrate. In this way, the accuracy, reliability and efficiency of defect inspection are further improved. In particular, when the protective film is removed from the first side of the substrate, any particles (such as fragments or debris) that have been separated from the substrate during processing but still remain on the substrate due to the presence of the protective film can also be removed. This allows for the detection of defects in the substrate that may not be identifiable before the protective film is removed.

[0013] Thus, the present invention provides an efficient method of processing a substrate which allows defects in the substrate to be accurately and reliably identified.

[0014] The first side of the substrate may be the front side or the back side of the substrate. The second side of the substrate may be the front side or the back side of the substrate.

[0015] The first side or surface of the substrate and the second side or surface of the substrate may be substantially parallel to each other.

[0016] Possible defects to be identified when inspecting the first and second sides of the substrate include, for example, front side chipping, back side chipping, delamination of layers formed on or in the substrate material, cracks, non-straight cut lines (meandering), burrs, whiskers, particles, contaminants, die shifting, die size differences, and unseparated dies (i.e., dies or chips that are not completely separated from each other).

[0017] The substrate may be made of, for example, semiconductor, glass, sapphire (Al 2 O 3 ), ceramic (eg, alumina ceramic), quartz, zirconium oxide, lead zirconate titanate (PZT), polycarbonate, or optical crystal material.

[0018] Specifically, the substrate can be made of, for example, silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), indium arsenide (InAs), indium phosphide (InP), silicon nitride (SiN), lithium tantalate (LT), lithium niobate (LN), aluminum nitride (AlN) or silicon oxide (SiO2), etc.

[0019] The substrate may be a single crystal substrate, a glass substrate, a compound substrate (eg, a compound semiconductor substrate, such as a SiC, SiN, GaN or GaAs substrate) or a polycrystalline substrate (eg, a ceramic substrate).

[0020] The substrate may be a wafer. For example, the substrate may be a semiconductor-sized wafer. In this article, the term "semiconductor-sized wafer" refers to a wafer having the size (standardized size), in particular the diameter (standardized diameter), i.e., the outer diameter, of a semiconductor wafer. The size, in particular the diameter, i.e., the outer diameter, of a semiconductor wafer is defined in the SEMI standard. For example, the size of a polished single crystal silicon (Si) wafer is defined in the SEMI standards M1 and M76. The semiconductor-sized wafer may be a 3-inch, 4-inch, 5-inch, 6-inch, 8-inch, 12-inch, or 18-inch wafer.

[0021] The substrate may be a semiconductor wafer. For example, the substrate may be made of any of the semiconductor materials given above.

[0022] The substrate (e.g., wafer) can be made of a single material or a combination of different materials (e.g., two or more of the above materials). For example, the substrate can be a Si-glass bonded wafer, in which a wafer element made of Si is bonded to a wafer element made of glass.

[0023] The metal layer or metal coating may be present on the first side or the second side of the substrate, in particular on the entire first side or the entire second side of the substrate. The metal layer or metal coating may be present on the back side of the substrate, in particular on the entire back side of the substrate.

[0024] The substrate may have any type of shape. In a top view of the substrate, the substrate may have, for example, a circular, oval, elliptical or polygonal (eg rectangular or square) shape.

[0025] The method of the present invention may further include inspecting the first side of the substrate for defects through the protective film before removing the protective film from the first side of the substrate. In this case, the method includes two steps of inspecting the first side of the substrate for defects from the first side of the substrate, one step before removing the protective film from the first side of the substrate, and one step after removing the protective film from the first side of the substrate. Therefore, the accuracy and reliability of defect detection can be further improved. In particular, the combination of these two inspection steps allows the nature of any one or more defects identified to be determined more accurately.

[0026] Before removing the protective film from the first side of the substrate, inspecting the defects of the first side of the substrate through the protective film also enables the first side of the substrate to be inspected directly after processing the substrate from the second side of the substrate. Therefore, the position of the substrate, in particular the position of the separated elements obtained by dividing the substrate, is accurately maintained. For example, by removing the protective film from the first side of the substrate, a displacement or movement of the substrate or the separated elements obtained by dividing the substrate may not occur, because the protective film removal step is performed in a subsequent stage of the method. In addition, the influence of any changes in the characteristics of the protective film (such as shrinkage or loosening of the protective film) in subsequent processing and / or handling steps on the inspection process can be minimized or even eliminated. In addition, one or more steps of obtaining and / or associating position information, which will be described in detail below, can be performed in a particularly accurate and reliable manner.

[0027] Furthermore, by inspecting the first side of the substrate for defects through the protective film before removing the protective film from the first side of the substrate, the first side of the substrate can be inspected in a particularly safe and reliable manner. In particular, during this inspection process, the protective film safely protects the first side of the substrate from contamination, such as dust or debris.

[0028] For example, the first side of the substrate may be inspected for defects through the protective film by radiation, such as visible light, which is transmitted through the protective film, ie the protective film is transparent to the radiation. For example, a camera may be used for this purpose.

[0029] Inspecting the first side of the substrate for defects through the protective film may be performed before attaching the supporting film to the second side of the substrate.Inspecting the first side of the substrate for defects through the protective film may be performed after attaching the supporting film to the second side of the substrate.

[0030] The substrate may have a device region on a first side, the device region having a plurality of devices.The first side of the substrate may be a front side of the substrate.

[0031] The device in the device region may be, for example, a semiconductor device, a power device, an optical device, a medical device, an electronic component, a micro-electromechanical system (MEMS) device, or a combination thereof. The device may include or may be, for example, a transistor, such as a metal oxide semiconductor field effect transistor (MOSFET), or an insulated-gate bipolar transistor (IGBT), or a diode (e.g., a Schottky barrier diode).

[0032] The substrate may also have a peripheral marginal area, for example on the first side, which has no devices and is formed around the device area.

[0033] For example, if the substrate is a through silicon via (TSV) wafer, the substrate may have a patterned area on the second side, the patterned area including, for example, devices (such as those described above) and / or electrical interconnects. The second side of the substrate may be the back side of the substrate.

[0034] The method may also include: if one or more defects are identified by inspecting the defects of the second side of the substrate from the second side of the substrate, one or more positions of the one or more identified defects are determined to obtain first position information. The first position information is information specifying the position of each defect on the second side of the substrate. The position of each defect can be defined in a coordinate system of the substrate, for example, relative to a dividing line and / or device formed on the substrate, and / or relative to one or more other elements (element) of the substrate. One or more elements of the substrate may be or include one or more of a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation flat of the substrate, and the center of the substrate. The position of each defect may be defined relative to an element (e.g., a center) or multiple elements of a supporting device (e.g., a chuck table) supporting the substrate, and / or relative to one or more sealing rings, and / or relative to one or more guard rings.

[0035] When inspecting the second side of the substrate for defects from the second side of the substrate, the following information may be obtained: one or more distances of one or more defects from one or more elements of the substrate, such as a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and / or a center of the substrate; and / or one or more distances of one or more defects from an element (e.g., a center) or multiple elements of a support device (e.g., a chuck table) supporting the substrate; and / or one or more sizes of one or more defects; and / or one or more distances of one or more defects from one or more sealing rings; and / or one or more distances of one or more defects from one or more guard rings. This information may be used or used as first position information.

[0036] The method may also include: if one or more defects are identified by inspecting the defects of the first side of the substrate from the first side of the substrate after removing the protective film from the first side of the substrate, one or more positions of the one or more identified defects are determined to obtain second position information. The second position information is information specifying the position of each defect on the first side of the substrate. The position of each defect can be defined in a coordinate system of the substrate, for example, relative to a dividing line and / or device formed on the substrate, and / or relative to one or more other elements of the substrate. The one or more elements of the substrate may be or include one or more of a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and a center of the substrate. The position of each defect may be defined relative to an element (e.g., a center) or multiple elements of a supporting device (e.g., a chuck table) supporting the substrate, and / or relative to one or more sealing rings, and / or relative to one or more protective rings.

[0037] When inspecting the first side of the substrate for defects from the first side of the substrate after removing the protective film from the first side of the substrate, the following information can be obtained: one or more distances of one or more defects from one or more elements of the substrate, such as a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and / or a center of the substrate; and / or one or more distances of one or more defects from an element (e.g., a center) or multiple elements of a support device (e.g., a chuck table) supporting the substrate; and / or one or more sizes of one or more defects; and / or one or more distances of one or more defects from one or more sealing rings; and / or one or more distances of one or more defects from one or more guard rings. This information can be used or used as second position information.

[0038] The first position information and / or the second position information allow a particularly good traceability of defects, thereby enabling a more accurate and more reliable assessment of where and when the defects occurred during processing. For example, the first position information and / or the second position information can be used, for example, in further processing, handling and / or transport steps. In particular, if the substrate is divided into a plurality of separate components (e.g., chips or dies) in a step of processing the substrate from the second side of the substrate or in a subsequent step, the defective components (e.g., defective chips or dies) can be reliably separated by relying on the first position information and / or the second position information, in particular by relying on the first position information and the second position information. Since the positions of the respective defects on the second side and the first side of the substrate are specified in the first position information and the second position information, respectively, these defective components (e.g., defective chips or dies) can be identified and tracked in a particularly accurate and efficient manner. The first position information and / or the second position information can be associated with information about the position of a specific part or region of the substrate (e.g., a part or region forming a device or electrical interconnection, etc.). In particular, the first position information and / or the second position information can be associated with information about the position of each element in the substrate obtained by dividing the substrate. In this way, defective elements can be particularly reliably identified and tracked. The position of each specific part or region of the substrate, in particular the position of each element in the substrate obtained by dividing the substrate, can be defined in the coordinate system of the substrate, for example, relative to the dividing line and / or device formed on the substrate, and / or relative to one or more other elements of the substrate. One or more elements of the substrate can be or include one or more of a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and the center of the substrate. The position of each specific part or region of the substrate, in particular the position of each element obtained by dividing the substrate, can be defined relative to an element (e.g., a center) or multiple elements of a supporting device (e.g., a chuck table) supporting the substrate, and / or relative to one or more sealing rings, and / or relative to one or more protective rings.

[0039] Thus, defective components can be identified and tracked by inspecting the substrate rather than inspecting each component individually, further increasing the efficiency of the method.

[0040] Determining the location of each defect on the first side and the second side of the substrate and using the first location information and / or the second location information in subsequent processing, handling and / or transportation steps can be performed by data processing equipment (e.g., using software), data communication settings, and / or control functions configured for this purpose. In particular, such equipment can be used to identify and / or track defective components (e.g., defective chips or dies).

[0041] If the method includes a step of inspecting defects on the first side of the substrate through the protective film before removing the protective film from the first side of the substrate, the method may further include: if one or more defects are identified by inspecting the first side of the substrate through the protective film, one or more positions of the identified one or more defects are determined to obtain third position information. The third position information is information specifying the position of each defect on the first side of the substrate. The position of each defect can be defined in a coordinate system of the substrate, for example, relative to a dividing line and / or device formed on the substrate, and / or relative to one or more other elements of the substrate. The one or more elements of the substrate may be or include one or more of a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and a center of the substrate. The position of each defect can be defined relative to an element (e.g., a center) or multiple elements of a support device (e.g., a chuck table) supporting the substrate, and / or relative to one or more sealing rings, and / or relative to one or more protective rings.

[0042] When inspecting the first side of the substrate for defects through the protective film before removing the protective film from the first side of the substrate, the following information can be obtained: one or more distances of one or more defects from one or more elements of the substrate, such as a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and / or a center of the substrate; and / or one or more distances of one or more defects from an element (e.g., a center) or multiple elements of a support device (e.g., a chuck table) supporting the substrate; and / or one or more sizes of one or more defects; and / or one or more distances of one or more defects from one or more sealing rings; and / or one or more distances of one or more defects from one or more guard rings. This information can be used or used as third position information.

[0043] For example, a comparison between the second position information and the third position information allows for a more accurate determination of the nature of any one or more defects identified.

[0044] Furthermore, the third piece of position information can be used, for example, in further processing, handling and / or transport steps, in particular for identifying and tracking defective components.

[0045] The method may further include associating the first location information with the second location information.

[0046] By associating the first position information with the second position information, the nature of any identified one or more defects can be determined with greater accuracy. In addition, the efficiency and reliability of identifying and tracking defective parts of the substrate (in particular defective components) can be further improved. For example, the first position information and the second position information can be associated with each other and with information about the positions of the parts of the substrate (for example, the components obtained by dividing the substrate) in the substrate.

[0047] The method may comprise associating the first position information with the second position information and / or with the third position information.

[0048] Associating the first position information with the second position information and / or with the third position information may be performed by a data processing device (eg the data processing device described above).

[0049] In the method of the present invention, the inspection device can be used to inspect the second side of the substrate for defects from the second side of the substrate. The inspection device can also be used to inspect the first side of the substrate for defects from the first side of the substrate. In this case, a single inspection device is used to inspect the first side and the second side of the substrate. In this way, the method can be performed in a simple and cost-effective manner.

[0050] The inspection device can also be used to inspect defects on the first side of the substrate through the protective film. In this case, a single inspection device is used for all three inspection steps, making the method simpler and more effective.

[0051] The inspection device may be arranged on or in a processing device or a processing apparatus for processing the substrate from the second side of the substrate. The inspection device may form part of the processing device or the processing apparatus. In this case, the method can be performed in a particularly effective manner.

[0052] Alternatively, the inspection device may be arranged in the processing device or outside the processing device. For example, the inspection device may be arranged in a separate inspection device (eg an optical inspection device).

[0053] The inspection device may be, for example, a camera, such as a microscope camera for optical inspection.

[0054] Alternatively, the first inspection device can be used to inspect the second side of the substrate for defects from the second side of the substrate, and a different second inspection device can be used to inspect the first side of the substrate for defects from the first side of the substrate. The second inspection device or a different third inspection device can be used to inspect the first side of the substrate for defects through the protective film.

[0055] One, two or all of the first to third inspection devices may be arranged on or in a processing device or a processing apparatus, which is used to process the substrate from the second side of the substrate. One, two or all of the first to third inspection devices may form a part of the processing device or the processing apparatus.

[0056] One, two or all of the first to third inspection devices may be arranged outside the processing equipment or processing device. For example, one, two or all of the first to third inspection devices may be arranged in a separate inspection device (e.g., an optical inspection device). All of the first to third inspection devices may be arranged in the same separate inspection device. Each of the first to third inspection devices may be arranged in a different separate inspection device.

[0057] The first inspection device may be, for example, a camera, such as a microscope camera for optical inspection. The second inspection device may be, for example, a camera, such as a microscope camera for optical inspection. The third inspection device may be, for example, a camera, such as a microscope camera for optical inspection.

[0058] The supporting film may be made of a single material, in particular a single homogeneous material.The supporting film may be, for example, a sheet or a foil.

[0059] The support film may be made of a plastic material (eg, a polymer), for example, a polyolefin (eg, polyethylene (PE), polypropylene (PP), or polybutylene (PB)).

[0060] The support film may have a thickness in the range of 5 to 500 μm, preferably 5 to 200 μm, more preferably 8 to 100 μm, even more preferably 10 to 80 μm, even more preferably 12 to 50 μm. Particularly preferably, the support film has a thickness in the range of 80 to 250 μm.

[0061] The supporting film may have any type of shape. In a top view of the supporting film, the supporting film may have, for example, a circular, oval, elliptical or polygonal (eg rectangular or square) shape.

[0062] The support film can be attached to the second side of the substrate with an adhesive. The adhesive can be present on the entire front surface of the support film that contacts the second side of the substrate. For example, the support film can be a UV curable adhesive tape.

[0063] Alternatively, the support film may be attached to the second side of the substrate such that at least a central area of ​​the front surface of the support film is in direct contact with the second side of the substrate such that no adhesive exists between the at least a central area of ​​the front surface of the support film and the second side of the substrate.

[0064] By attaching the support film to the second side of the substrate so that at least the central area of ​​the front surface of the support film is in direct contact with the second side of the substrate, the risk of possible contamination or damage to the substrate, for example due to the adhesion of an adhesive layer or adhesive residue on the substrate, can be significantly reduced or even eliminated.

[0065] The support film may be attached to the second side of the substrate such that the front surface of the support film is in direct contact with the second side of the substrate over the entire area in which the front surface of the support film is in contact with the second side of the substrate. Thus, no material, in particular no adhesive, is present between the front surface of the support film and the second side of the substrate.

[0066] In this way, the risk of possible contamination or damage to the substrate, for example due to the adhesive forces of an adhesive layer or adhesive residues on the substrate, can be reliably eliminated.

[0067] The entire front surface of the supporting film may be free of adhesive.

[0068] The adhesive (eg, adhesive layer) may be provided only in the peripheral region of the front surface of the supporting film.The peripheral region of the front surface of the supporting film may be arranged to surround the central region of the front surface of the supporting film.

[0069] The front surface of the support film may be attached to the second side of the substrate such that the adhesive layer contacts only a peripheral portion of the second side of the substrate. The peripheral portion of the second side of the substrate may be or correspond to a peripheral edge region of the substrate.

[0070] By using such an adhesive layer, the attachment of the supporting film to the substrate can be further improved. In addition, since the adhesive layer is only provided in the peripheral area of ​​the front surface of the supporting film, the area where the supporting film and the substrate are attached to each other through the adhesive layer is significantly reduced compared to the case where the adhesive layer is provided on the entire front surface of the supporting film. Therefore, the supporting film can be more easily separated from the substrate, and the risk of damaging the substrate is greatly reduced.

[0071] Attaching the supporting film to the second side of the substrate may consist of, or include, applying an external stimulus to the supporting film. By applying the external stimulus, an adhesion force is generated between the supporting film and the substrate, which adhesion force holds the supporting film in position on the substrate. Thus, no additional adhesive material is required to attach the supporting film to the second side of the substrate.

[0072] In particular, by applying an external stimulus to the support film, a form fit (e.g., positive fit) and / or a material bond (e.g., adhesive bond) may be formed between the support film and the substrate. The terms "material bond" and "adhesive bond" define an attachment or connection between the support film and the substrate that is formed due to atomic and / or molecular forces acting between the two components.

[0073] The term "adhesive bonding" refers to the presence of these atomic and / or molecular forces that act to attach or adhere the support film to the substrate, but does not imply the presence of an additional adhesive between the support film and the substrate. Rather, in the embodiments described in detail above, at least a central region of the front surface of the support film is in direct contact with the second side of the substrate.

[0074] Applying the external stimulus to the supporting film may comprise or consist of heating the supporting film, and / or cooling the supporting film, and / or applying a vacuum to the supporting film, and / or irradiating the supporting film with radiation (eg light), for example by using a laser beam.

[0075] The external stimulus may include either a chemical compound and / or electron or plasma irradiation, and / or mechanical treatment (eg, pressure, friction, or ultrasound application), and / or static electricity.

[0076] A cushioning layer may be attached to a rear surface of the supporting film opposite to the front surface of the supporting film. The front surface of the cushioning layer may be attached to the rear surface of the supporting film.

[0077] The method is particularly advantageous if protrusions, projections, recesses and / or trenches (e.g., surface unevenness or roughness, bumps, optical elements (e.g., optical lenses)) or other structures protrude, extend or protrude from the second side of the substrate in the thickness direction of the substrate. In this case, the protrusions or projections define the surface structure or morphology of the corresponding substrate side, making the side uneven. If a buffer layer is attached to the rear surface of the supporting film, the protrusions and / or recesses can be embedded in the buffer layer. By embedding the protrusions in the buffer layer, the protrusions (e.g., optical elements or other structures) are reliably protected from any damage.

[0078] The material of the buffer layer is not particularly limited. In particular, the buffer layer can be formed of any type of material that allows the protrusion protruding in the thickness direction of the substrate to be embedded in the buffer layer. For example, the buffer layer can be formed of a resin, an adhesive, a gel, or the like.

[0079] The buffer layer can be curable by an external stimulus (e.g., UV radiation, heat, electric field, and / or chemical agent). In this case, when the external stimulus is applied to the buffer layer, the buffer layer hardens at least to some extent. For example, the buffer layer can be formed of a curable resin, a curable adhesive, or a curable gel, etc.

[0080] The buffer layer may be configured to exhibit a degree of compressibility, elasticity and / or flexibility after it is cured, i.e., to be compressible, elastic and / or flexible after curing. For example, the buffer layer may be such that it enters a rubbery state upon curing. Alternatively, the buffer layer may be configured to reach a rigid, hard state after curing.

[0081] Preferred examples of the UV curable resin used as the buffer layer in the method of the present invention are ResiFlat from DISCO and TEMPLOC from DENKA.

[0082] The method may further include applying an external stimulus to the buffer layer to cure the buffer layer.

[0083] The buffer layer may have a thickness in the range of 10 μm to 300 μm, preferably 20 μm to 250 μm, and more preferably 50 μm to 200 μm.

[0084] A base sheet may be attached to a rear surface of the buffer layer opposite to a front surface thereof, and the front surface of the buffer layer is attached to the support film.

[0085] The material of the substrate is not particularly limited. The substrate may be made of a soft or tough material, such as a polymer material, such as polyvinyl chloride (PVC), ethylenevinyl acetate (EVA) or polyolefin.

[0086] Alternatively, the substrate may be made of a rigid or hard material such as polyethylene terephthalate (PET), and / or silicon, and / or glass, and / or stainless steel (SUS).

[0087] For example, if the substrate is made of polyethylene terephthalate (PET) or glass and the buffer layer is curable by external stimulation, the buffer layer can be cured using radiation (e.g., UV radiation) that can be transmitted through polyethylene terephthalate (PET) or glass. If the substrate is made of silicon or stainless steel (SUS), a cost-effective substrate is provided.

[0088] Furthermore, the substrate may be formed from a combination of the materials listed above.

[0089] The substrate may have a thickness in the range of 30 μm to 1500 μm, preferably 40 μm to 1200 μm, and more preferably 50 μm to 1000 μm.

[0090] The protective film is configured to protect the first side of the substrate, in particular to protect the first side of the substrate during processing of the substrate from a second side of the substrate.

[0091] The protective film may be made of a single material, in particular a single homogeneous material. The protective film may be, for example, a sheet or a foil.

[0092] The protective film can be made of a plastic material (such as a polymer). For example, the protective film can be made of a polyolefin (such as polyethylene (PE), polypropylene (PP) or polybutylene (PB)).

[0093] The protective film may have a thickness in the range of 5 to 500 μm, preferably 5 to 200 μm, more preferably 8 to 100 μm, even more preferably 10 to 80 μm, and even more preferably 12 to 50 μm. Particularly preferably, the protective film has a thickness in the range of 80 to 150 μm.

[0094] The protective film can have any type of shape. In a top view of the protective film, the protective film can have, for example, a circular, oval, elliptical or polygonal (eg rectangular or square) shape.

[0095] The protective film may be attached to the first side of the substrate by an adhesive. The adhesive may be present on the entire front surface of the protective film in contact with the first side of the substrate. For example, the protective film may be a UV curable adhesive tape.

[0096] Alternatively, the protective film may be attached to the first side of the substrate such that at least a central region of the front surface of the protective film is in direct contact with the first side of the substrate, such that no adhesive exists between at least a central region of the front surface of the protective film and the first side of the substrate.

[0097] By attaching the protective film to the first side of the substrate so that at least a central area of ​​the front surface of the protective film is in direct contact with the first side of the substrate, the risk of possible contamination or damage to the substrate, for example due to the adhesion of an adhesive layer or adhesive residue on the substrate, can be significantly reduced or even eliminated.

[0098] The protective film may be attached to the first side of the substrate such that the front surface of the protective film is in direct contact with the first side of the substrate throughout the area in which the front surface of the protective film contacts the first side of the substrate. Thus, no material, in particular no adhesive, exists between the front surface of the protective film and the first side of the substrate.

[0099] In this way, the risk of possible contamination or damage to the substrate, for example due to the adhesive forces of an adhesive layer or adhesive residues on the substrate, can be reliably eliminated.

[0100] The entire front surface of the protective film may be free of adhesive.

[0101] Attaching the protective film to the first side of the substrate such that at least a central region of the front surface of the protective film is in direct contact with the first side of the substrate further facilitates the step of inspecting the first side of the substrate for defects through the protective film. In particular, since there is no adhesive between at least a central region of the front surface of the protective film and the first side of the substrate, the inspection can be performed in a particularly efficient and reliable manner. For example, if the first side of the substrate is inspected for defects through the protective film by transmitting radiation (e.g. visible light) through the protective film, the radiation will not be reflected, absorbed or scattered by the adhesive layer at least in the central region of the front surface of the protective film.

[0102] The adhesive (eg, adhesive layer) may be provided only in the peripheral region of the front surface of the protective film.The peripheral region of the front surface of the protective film may be arranged to surround the central region of the front surface of the protective film.

[0103] The front surface of the protective film may be attached to the first side of the substrate such that the adhesive layer contacts only a peripheral portion of the first side of the substrate. The peripheral portion of the first side of the substrate may be or correspond to a peripheral edge region of the substrate.

[0104] By using such an adhesive layer, the attachment of the protective film to the substrate can be further improved. In addition, since the adhesive layer is only provided in the peripheral area of ​​the front surface of the protective film, the area where the protective film and the substrate are attached to each other through the adhesive layer is significantly reduced compared to the case where the adhesive layer is provided on the entire front surface of the protective film. Therefore, the protective film can be more easily separated from the substrate, and the risk of damaging the substrate is greatly reduced.

[0105] Attaching the protective film to the first side of the substrate may consist of, or include, applying an external stimulus to the protective film. By applying the external stimulus, an adhesion force is generated between the protective film and the substrate, which adhesion force holds the protective film in position on the substrate. Thus, no additional adhesive material is required to attach the protective film to the first side of the substrate.

[0106] In particular, by applying an external stimulus to the protective film, a form fit (eg, a positive fit) and / or a material bond (eg, an adhesive bond) may be formed between the protective film and the substrate.

[0107] Applying the external stimulus to the protective film may include or consist of heating the protective film, and / or cooling the protective film, and / or applying a vacuum to the protective film, and / or irradiating the protective film with radiation (eg light), for example by using a laser beam.

[0108] The external stimulus may include either a chemical compound and / or electron or plasma irradiation, and / or mechanical treatment (eg, pressure, friction, or ultrasound application), and / or static electricity.

[0109] The buffer layer may be attached to a rear surface of the protective film opposite to the front surface of the protective film. The front surface of the buffer layer may be attached to the rear surface of the protective film. The buffer layer may have the properties, characteristics and properties described above.

[0110] In particular, the buffer layer may be curable by an external stimulus, such as UV radiation, heat, an electric field and / or a chemical agent.The method may further comprise: applying the external stimulus to the buffer layer to cure the buffer layer.

[0111] The substrate may be attached to a rear surface of the buffer layer opposite to a front surface of the buffer layer, and the front surface of the buffer layer is attached to the protective film.The substrate may have the properties, characteristics and properties described above.

[0112] Processing the substrate from the second side of the substrate may consist of or include dividing the substrate from the second side of the substrate into a plurality of separate elements. The separate elements may be, for example, chips or dies.

[0113] In this case, the method may include: after attaching the protective film to the first side of the substrate, dividing the substrate into a plurality of separate elements from the second side of the substrate; after dividing the substrate into a plurality of separate elements, inspecting the second side of the divided substrate for defects from the second side of the divided substrate; and after inspecting the defects of the second side of the divided substrate, attaching the supporting film to the second side of the divided substrate. In addition, the method may include: removing the protective film from the first side of the divided substrate; and after removing the protective film from the first side of the divided substrate, inspecting the first side of the divided substrate for defects from the first side of the divided substrate.

[0114] Using the method of the present invention, defective components (eg, defective chips or dies) can be efficiently and reliably identified and tracked by inspecting the substrate (ie, the singulated substrate) rather than inspecting each component individually.

[0115] Processing the substrate from the second side of the substrate may consist of or include cutting the substrate along a thickness direction of the substrate. The thickness direction extends from the second side of the substrate toward the first side of the substrate.

[0116] Dividing the substrate into a plurality of separate elements may consist of, or include, cutting the substrate along a thickness direction of the substrate.

[0117] The substrate may be cut along its entire thickness, so as to completely separate the substrate, or may be cut along only a portion of its thickness.

[0118] One or more dividing lines may be formed on the first side and / or the second side of the substrate. If the substrate has a device region on the first side and / or on the second side of the substrate, the device region having a plurality of devices, the devices may be separated by one or more dividing lines. Preferably, the device region and the one or more dividing lines are formed on the first side of the substrate.

[0119] Processing the substrate from the second side of the substrate may consist of or include cutting the substrate along one or more separation lines.

[0120] Dividing the substrate into a plurality of separate components may consist of, or include, cutting the substrate along one or more dividing lines.

[0121] Cutting the substrate along the thickness direction of the substrate may consist of or include: mechanically cutting the substrate; and / or laser cutting the substrate; and / or plasma cutting the substrate. For example, the substrate may be mechanically cut by blade dicing or sawing.

[0122] The substrate can be cut in a single mechanical cutting step, a single laser cutting step or a single plasma cutting step. Alternatively, the substrate can be cut by a series of mechanical cutting and / or laser cutting and / or plasma cutting steps.

[0123] If the device area and one or more dividing lines are formed on the first side of the substrate, and the substrate is cut from the first side of the substrate along one or more dividing lines, for example by mechanical cutting (e.g., blade cutting or sawing) or by laser cutting, the quality of the device in the device area may be affected by the cutting process. This is particularly applicable to the case where the substrate is cut along the entire thickness of the substrate rather than only along a portion of the thickness of the substrate. For example, problems such as front and / or rear side fragmentation, contamination of the device area, and degradation of the die strength of the resulting chip or die may occur. If the device area and one or more dividing lines are formed on the first side of the substrate rather than on the second side of the substrate, these problems can be reliably avoided by cutting the substrate from the second side of the substrate along one or more dividing lines. Optionally, a metal layer or a metal coating may be present on the second side of the substrate, in particular on the entire second side of the substrate.

[0124] Laser cutting can be performed, for example, by ablative laser cutting and / or by stealth laser cutting, i.e., by forming a modified region in the substrate by applying a laser beam as will be described in further detail below, and / or by forming a plurality of hole regions in the substrate by applying a laser beam. Each of these hole regions can consist of a modified region and a space in the modified region that is open to the substrate surface.

[0125] In the invisible laser cutting process, a laser beam is applied to the substrate, the laser beam having a wavelength that allows the laser beam to be transmitted through the substrate. Therefore, the substrate is made of a material that is transparent to the laser beam. The laser beam is applied to the substrate at least at multiple locations so as to form multiple modified areas in the substrate (e.g., inside or in a majority of the substrate). In particular, the laser beam can be applied to the substrate at least at multiple locations along at least one dividing line so as to form multiple modified areas in the substrate along at least one dividing line.

[0126] The laser beam may be a pulsed laser beam. The pulsed laser beam may have a pulse width, for example, in the range of 1 fs to 1000 ns.

[0127] The modified area is a substrate area that has been modified by applying a laser beam. The modified area may be a substrate area where the structure of the substrate material has been modified. The modified area may be a substrate area where the substrate has been damaged. The modified area may include an amorphous area or a crack-formed area, or may be an amorphous area or a crack-formed area.

[0128] By forming these modified regions, the strength of the substrate in the region where the modified regions are formed is reduced. Therefore, the division of the substrate (eg, along at least one division line) having formed a plurality of modified regions is greatly facilitated.

[0129] For example, if the crack in the substrate extends from the modified zone to the first side and the second side of the substrate, the substrate can be completely split in the invisible laser cutting process. If the substrate is not completely split in the invisible laser cutting process, the method may also include: completely splitting the substrate, for example, by applying an external force to the substrate to completely split the substrate. For example, the external force can be applied to the substrate by radially expanding the supporting film, that is, by using the supporting film as an expansion belt (for example, with the help of an expansion drum). Alternatively, the external force can be applied to the substrate by expanding the supporting film, for example using an expansion rod. For example, the expansion equipment described in DE 10 2018207498A1 can be used to expand the supporting film. In addition, in this case, the supporting film can also be used as an expansion belt. Before expanding the supporting film, an additional breaking step can be performed to break the substrate along the area where the modified zone is formed.

[0130] If the substrate has been completely separated in the invisible laser cutting process, the support film can be expanded, for example radially, so as to increase the distance between adjacent separated components (such as chips or dies). In this way, the risk of damaging these components when picking them up from the support film in subsequent steps can be significantly reduced.

[0131] Before attaching the protective film to the first side of the substrate, the substrate may be cut from the first side along a portion of the thickness of the substrate. In this way, one or more layers formed on the first side, such as a low-k layer or a metal layer, may be removed in the area of ​​the substrate to be cut. For example, the substrate may be cut along a portion of the thickness of the substrate along one or more cut lines. The substrate may be cut along a portion of the thickness of the substrate by mechanical cutting (e.g., using a blade or saw) and / or by laser cutting or laser grooving.

[0132] Before or after attaching the protective film to the first side of the substrate, the invisible laser cutting process can be performed on the substrate from the first side of the substrate. For example, the invisible laser cutting process can be performed along one or more separation lines. Performing the invisible laser cutting process on the substrate from the first side of the substrate is particularly advantageous for the case of narrow separation lines (e.g., separation lines having a width of 20 μm or less).

[0133] If after the protective film is attached to the first side of the substrate, the invisible laser cutting process is performed, the laser beam is applied to the substrate through the protective film. In this case, the wavelength of the laser beam is selected so that the laser beam is transmitted through the protective film, that is, the protective film is transparent to the laser beam.

[0134] The method of the present invention may further comprise: after inspecting the first side of the substrate (particularly the divided substrate) for defects from the first side of the substrate, picking up the separated elements, i.e. the separated elements obtained by dividing the substrate, from the support film. The separated elements may be, for example, chips or dies. Each separated element, in particular each chip or die, may comprise one or more of the devices formed in the device area (if present).

[0135] Thus, the separated components are picked up from the support film after the first side of the substrate has been inspected for defects from the first side of the substrate. Thus, defective components can be identified and tracked by inspecting the substrate, in particular by relying on information about the position of the components in the substrate, rather than by inspecting the components individually. Thus, the method can be performed with a particularly high degree of efficiency.

[0136] By removing the protective film from the first side of the substrate (particularly the divided substrate), particles (e.g., fragments or chips) that were separated from the substrate during processing (particularly the division) but still remain on the substrate due to the presence of the protective film can also be removed. In particular, these particles may adhere to the protective film, for example due to the presence of an adhesive on the protective film or due to material bonding between the particles and the protective film, so that the particles are removed from the substrate together with the protective film.

[0137] After removing the protective film from the first side of the substrate, the separation element is picked up from the supporting film. Therefore, when the separation element is picked up, the amount of particles present on the separation element is greatly reduced. The separation element can even be substantially free of these particles. Therefore, a separation element with high quality is obtained, and the further processing, handling and / or transportation of the separation element can be made much more efficient. For example, the separation elements (such as chips or bare chips) can be put into use directly after they are picked up from the supporting film, for example, assembled into a semiconductor packaging device or incorporated into an electronic device.

[0138] Processing the substrate from the second side of the substrate may consist of or include thinning the substrate to reduce the thickness of the substrate.Thinning the substrate may be performed before and / or after singulating the substrate into a plurality of separate components from the second side of the substrate.

[0139] Thinning the substrate may consist of or include grinding the substrate from the second side of the substrate, and / or polishing the substrate from the second side of the substrate, and / or etching the substrate from the second side of the substrate.

[0140] The present invention also provides a system for processing a substrate, the substrate having a first side and a second side opposite to the first side. The system includes: an attachment device configured to attach a protective film to the first side of the substrate; a processing device configured to process the substrate from the second side of the substrate after attaching the protective film to the first side of the substrate; and an inspection device configured to inspect defects of the second side of the substrate from the second side of the substrate after processing the substrate from the second side of the substrate. The system also includes: an attachment device configured to attach a supporting film to the second side of the substrate after inspecting defects of the second side of the substrate; a protective film removal device configured to remove the protective film from the first side of the substrate; and an inspection device configured to inspect defects of the first side of the substrate from the first side of the substrate after removing the protective film from the first side of the substrate.

[0141] The substrate processing system of the present invention is a system configured to execute the substrate processing method of the present invention. Therefore, the substrate processing system provides the technical effects and advantages that have been described in detail above with respect to the substrate processing method.

[0142] The features described above for the substrate processing method of the present invention are also applicable to the substrate processing system of the present invention.

[0143] In particular, the substrate, the protective film and the supporting film may be the same as described above. As already described above, the protective film and / or the supporting film may have a buffer layer, or a buffer layer and a substrate attached to the protective film and / or the supporting film.

[0144] The substrate processing system may include a controller for controlling the system, in particular for controlling components of the system. The controller may include a plurality of control units, for example control units for controlling different components of the system. The control units may be separate or individual control units.

[0145] The controller may be configured to control the substrate processing system so as to perform the substrate processing method of the present invention.

[0146] The controller may be configured to control the attachment device so as to attach the protective film to the first side of the substrate. The controller may be configured to control the processing device so as to process the substrate from the second side of the substrate after attaching the protective film to the first side of the substrate. The controller may be configured to control the inspection device so as to inspect the second side of the substrate for defects after processing the substrate from the second side of the substrate. The controller may be configured to control the attachment device so as to attach the supporting film to the second side of the substrate after inspecting the defects of the second side of the substrate. The controller may be configured to control the protective film removal device so as to remove the protective film from the first side of the substrate. The controller may be configured to control the inspection device so as to inspect the defects of the first side of the substrate from the first side of the substrate after removing the protective film from the first side of the substrate.

[0147] The substrate processing system of the present invention may consist of or include a single device or machine. Alternatively, the substrate processing system of the present invention may consist of or include multiple devices or machines (e.g., multiple separate or individual devices or machines). These devices or machines may be arranged (e.g., connected to each other) to form an in-line system. One, some or all of these devices or machines may be configured to perform one or more steps of the substrate processing method of the present invention.

[0148] The substrate processing system may further include a position determination device configured to: if one or more defects are identified by inspecting the defects of the second side of the substrate from the second side of the substrate, determine one or more positions of the identified one or more defects, thereby obtaining first position information. The controller may be configured to control the position determination device so that if one or more defects are identified by inspecting the defects of the second side of the substrate from the second side of the substrate, determine one or more positions of the identified one or more defects, thereby obtaining first position information. The first position information is information specifying the position of each defect on the second side of the substrate. The position of each defect may be defined in a coordinate system of the substrate, for example, relative to a separation line and / or device formed on the substrate, and / or relative to one or more other elements of the substrate. The one or more elements of the substrate may be or include one or more of a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and a center of the substrate. The position of each defect may be defined relative to an element (e.g., a center) or multiple elements of a support device (e.g., a chuck table) supporting the substrate, and / or relative to one or more sealing rings, and / or relative to one or more guard rings.

[0149] The first position information may consist of or include the following information: one or more distances of one or more defects from one or more elements of the substrate, such as a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g. a wafer notch), an orientation plane of the substrate and / or the center of the substrate; and / or one or more distances of one or more defects from an element (e.g. a center) or multiple elements of a supporting device (e.g. a chuck table) supporting the substrate; and / or one or more sizes of one or more defects; and / or one or more distances of one or more defects from one or more sealing rings; and / or one or more distances of one or more defects from one or more guard rings.

[0150] The position determination device may consist of or include a data processing device, which has, for example, software, data communication arrangements and / or control functions.

[0151] The substrate processing system may further include a position determination device configured to determine one or more positions of the one or more identified defects if one or more defects are identified by inspecting the defects of the first side of the substrate from the first side of the substrate after removing the protective film from the first side of the substrate, thereby obtaining second position information. The controller may be configured to control the position determination device so that if one or more defects are identified by inspecting the defects of the first side of the substrate from the first side of the substrate after removing the protective film from the first side of the substrate, one or more positions of the one or more identified defects are determined, thereby obtaining second position information. The second position information is information specifying the position of each defect on the first side of the substrate. The position of each defect may be defined in a coordinate system of the substrate, for example, relative to a dividing line and / or device formed on the substrate, and / or relative to one or more other elements of the substrate. The one or more elements of the substrate may be or include one or more of a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and a center of the substrate. The position of each defect may be defined relative to an element (eg, center) or elements of a support (eg, chuck table) supporting the substrate, and / or relative to one or more sealing rings, and / or relative to one or more guard rings.

[0152] The second position information may consist of or include the following information: one or more distances of one or more defects from one or more elements of the substrate, such as a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g. a wafer notch), an orientation plane of the substrate and / or the center of the substrate; and / or one or more distances of one or more defects from an element (e.g. a center) or multiple elements of a supporting device (e.g. a chuck table) supporting the substrate; and / or one or more sizes of one or more defects; and / or one or more distances of one or more defects from one or more sealing rings; and / or one or more distances of one or more defects from one or more guard rings.

[0153] The position determination device may consist of or include a data processing device, which has, for example, software, data communication arrangements and / or control functions.

[0154] The position determining device configured to determine one or more positions of one or more defects on the second side of the substrate and the position determining device configured to determine one or more positions of one or more defects on the first side of the substrate may be the same single position determining device. Alternatively, a first position determining device may be used to determine one or more positions of one or more defects on the second side of the substrate, and a different second position determining device may be used to determine one or more positions of one or more defects on the first side of the substrate. The first position determining device may consist of or include a data processing device, which may, for example, have software, data communication settings and / or control functions. The second position determining device may consist of or include a data processing device, which may, for example, have software, data communication settings and / or control functions.

[0155] The controller may be configured to associate the first position information and / or the second position information with information about the position of a specific portion or region of the substrate (e.g., a portion or region forming a device or electrical interconnection, etc.). In particular, the controller may be configured to associate the first position information and / or the second position information with information about the position of each element to be obtained by dividing the substrate in the substrate.

[0156] The substrate processing system may further include an inspection device configured to inspect defects of the first side of the substrate through the protective film before removing the protective film from the first side of the substrate. The controller may be configured to control the inspection device so as to inspect defects of the first side of the substrate through the protective film before removing the protective film from the first side of the substrate.

[0157] The inspection device may be configured to inspect defects on the first side of the substrate through the protective film before attaching the supporting film to the second side of the substrate. The inspection device may be configured to inspect defects on the first side of the substrate through the protective film after attaching the supporting film to the second side of the substrate.

[0158] The controller may be configured to control the inspection device so as to inspect the first side of the substrate for defects through the protective film before attaching the supporting film to the second side of the substrate. The controller may be configured to control the inspection device so as to inspect the first side of the substrate for defects through the protective film after attaching the supporting film to the second side of the substrate.

[0159] The substrate processing system may further include a position determination device configured to determine one or more positions of the one or more identified defects if one or more defects are identified by inspecting the defects of the first side of the substrate through the protective film, thereby obtaining third position information. The controller may be configured to control the position determination device so that if one or more defects are identified by inspecting the defects of the first side of the substrate through the protective film, one or more positions of the one or more identified defects are determined, thereby obtaining third position information. The third position information is information specifying the position of each defect on the first side of the substrate. The position of each defect may be defined in a coordinate system of the substrate, for example, relative to a separation line and / or device formed on the substrate, and / or relative to one or more other elements of the substrate. The one or more elements of the substrate may be or include one or more of a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g., a wafer notch), an orientation plane of the substrate, and a center of the substrate. The position of each defect may be defined relative to an element (e.g., a center) or multiple elements of a support device (e.g., a chuck table) supporting the substrate, and / or relative to one or more sealing rings, and / or relative to one or more protective rings.

[0160] The third position information may consist of or include the following information: one or more distances of one or more defects from one or more elements of the substrate, such as a reference mark of the substrate, an alignment mark of the substrate, an edge of the substrate, a notch of the substrate (e.g. a wafer notch), an orientation plane of the substrate and / or the center of the substrate; and / or one or more distances of one or more defects from an element (e.g. a center) or multiple elements of a supporting device (e.g. a chuck table) supporting the substrate; and / or one or more sizes of one or more defects; and / or one or more distances of one or more defects from one or more sealing rings; and / or one or more distances of one or more defects from one or more guard rings.

[0161] The position determination device may consist of or include a data processing device, which has, for example, software, data communication arrangements and / or control functions.

[0162] The position determination device configured to determine one or more positions of one or more defects identified on the first side of the substrate through the protective film may be a single position determination device that is the same as the position determination device configured to determine one or more positions of one or more defects on the second side of the substrate, and / or the position determination device configured to determine one or more positions of one or more defects on the first side of the substrate after removing the protective film from the first side of the substrate. Alternatively, a different third position determination device may be used to determine one or more positions of one or more defects identified on the first side of the substrate through the protective film. The third position determination device may consist of or include a data processing device, which data processing device, for example, has software, data communication settings and / or control functions.

[0163] The controller may be configured to associate the first position information with the second position information.The controller may be configured to associate the first position information with the second position information and / or with the third position information.

[0164] The inspection device configured to inspect the second side of the substrate and the inspection device configured to inspect the first side of the substrate after removing the protective film from the first side of the substrate may be the same single inspection device. The inspection device configured to inspect the first side of the substrate for defects through the protective film before removing the protective film from the first side of the substrate may be the same single inspection device as the inspection device configured to inspect the second side of the substrate and / or the inspection device configured to inspect the first side of the substrate after removing the protective film from the first side of the substrate.

[0165] The inspection device may be arranged on or in a processing device configured to process the substrate from the second side of the substrate. The inspection device may form a part of the processing device.

[0166] Alternatively, the inspection device may be arranged outside the processing device. For example, the inspection device may be arranged in a separate inspection device (eg, an optical inspection device).

[0167] The inspection device may be, for example, a camera, such as a microscope camera for optical inspection.

[0168] Alternatively, a first inspection device may be used to inspect the second side of the substrate for defects from the second side of the substrate, and a different second inspection device may be used to inspect the first side of the substrate for defects from the first side of the substrate after removing the protective film from the first side of the substrate. The second inspection device or a different third inspection device may be used to inspect the first side of the substrate for defects through the protective film.

[0169] One, two or all of the first to third inspection devices may be arranged on or in a processing device configured to process the substrate from the second side of the substrate. One, two or all of the first to third inspection devices may form a part of the processing device.

[0170] One, two or all of the first to third inspection devices may be arranged outside the processing device. For example, one, two or all of the first to third inspection devices may be arranged in a separate inspection device (e.g., an optical inspection device). All of the first to third inspection devices may be arranged in the same separate inspection device. Each of the first to third inspection devices may be arranged in a different separate inspection device.

[0171] The first inspection device may be, for example, a camera, such as a microscope camera for optical inspection. The second inspection device may be, for example, a camera, such as a microscope camera for optical inspection. The third inspection device may be, for example, a camera, such as a microscope camera for optical inspection.

[0172] The attachment device may be configured to attach the supporting film to the second side of the substrate so that at least a central area of ​​the front surface of the supporting film is in direct contact with the second side of the substrate, so that no adhesive exists between at least a central area of ​​the front surface of the supporting film and the second side of the substrate. The controller may be configured to control the attachment device so as to attach the supporting film to the second side of the substrate so that at least a central area of ​​the front surface of the supporting film is in direct contact with the second side of the substrate, so that no adhesive exists between at least a central area of ​​the front surface of the supporting film and the second side of the substrate.

[0173] The attachment device may be configured to attach the supporting film to the second side of the substrate so that the front surface of the supporting film is in direct contact with the second side of the substrate throughout the area where the front surface of the supporting film contacts the second side of the substrate. The controller may be configured to control the attachment device so as to attach the supporting film to the second side of the substrate so that the front surface of the supporting film is in direct contact with the second side of the substrate throughout the area where the front surface of the supporting film contacts the second side of the substrate.

[0174] The adhesive (eg, adhesive layer) may be provided only in the peripheral region of the front surface of the supporting film.The peripheral region of the front surface of the supporting film may be arranged to surround the central region of the front surface of the supporting film.

[0175] The attachment device may be configured to attach the front surface of the supporting film to the second side of the substrate so that the adhesive layer contacts only the peripheral portion of the second side of the substrate. The controller may be configured to control the attachment device so as to attach the front surface of the supporting film to the second side of the substrate so that the adhesive layer contacts only the peripheral portion of the second side of the substrate. The peripheral portion of the second side of the substrate may be or correspond to the peripheral edge region of the substrate.

[0176] The substrate processing system, in particular the attachment device, may include an external stimulus application device configured to apply an external stimulus to the support film. The controller may be configured to control the external stimulus application device so as to apply the external stimulus to the support film. By applying the external stimulus, an adhesion force is generated between the support film and the substrate, which adhesion force holds the support film in position on the substrate. The external stimulus may be as described above.

[0177] The external stimulation application device may consist of or include: a heating device configured to heat the support film; and / or a cooling device configured to cool the support film; and / or a vacuum application device configured to apply a vacuum to the support film; and / or an irradiation device configured to irradiate the support film with radiation (e.g., light), for example by using a laser beam.

[0178] The attachment device may be configured to attach the protective film to the first side of the substrate so that at least a central area of ​​the front surface of the protective film is in direct contact with the first side of the substrate, so that no adhesive exists between at least a central area of ​​the front surface of the protective film and the first side of the substrate. The controller may be configured to control the attachment device so as to attach the protective film to the first side of the substrate so that at least a central area of ​​the front surface of the protective film is in direct contact with the first side of the substrate, so that no adhesive exists between at least a central area of ​​the front surface of the protective film and the first side of the substrate.

[0179] The attachment device may be configured to attach the protective film to the first side of the substrate so that the front surface of the protective film is in direct contact with the first side of the substrate throughout the area where the front surface of the protective film contacts the first side of the substrate. The controller may be configured to control the attachment device so as to attach the protective film to the first side of the substrate so that the front surface of the protective film is in direct contact with the first side of the substrate throughout the area where the front surface of the protective film contacts the first side of the substrate.

[0180] The adhesive (eg, adhesive layer) may be provided only in the peripheral region of the front surface of the protective film.The peripheral region of the front surface of the protective film may be arranged to surround the central region of the front surface of the protective film.

[0181] The attachment device may be configured to attach the front surface of the protective film to the first side of the substrate so that the adhesive layer contacts only the peripheral portion of the first side of the substrate. The controller may be configured to control the attachment device so as to attach the front surface of the protective film to the first side of the substrate so that the adhesive layer contacts only the peripheral portion of the first side of the substrate. The peripheral portion of the first side of the substrate may be or correspond to the peripheral edge region of the substrate.

[0182] The substrate processing system, in particular the attachment device, may include an external stimulus application device configured to apply an external stimulus to the protective film. The controller may be configured to control the external stimulus application device so as to apply the external stimulus to the protective film. By applying the external stimulus, an adhesion force is generated between the protective film and the substrate, which adhesion force maintains the protective film in position on the substrate. The external stimulus may be as described above.

[0183] The external stimulation application device may consist of or include: a heating device configured to heat the protective film; and / or a cooling device configured to cool the protective film; and / or a vacuum application device configured to apply a vacuum to the protective film; and / or an irradiation device configured to irradiate the protective film with radiation (e.g., light), for example by using a laser beam.

[0184] The attachment device configured to attach the protective film to the first side of the substrate and the attachment device configured to attach the supporting film to the second side of the substrate can be the same single attachment device. Alternatively, the protective film can be attached to the first side of the substrate using a first attachment device, and the supporting film can be attached to the second side of the substrate using a different second attachment device.

[0185] An attaching device configured to attach the protective film to the first side of the substrate may be different from a protective film removing device configured to remove the protective film from the first side of the substrate.

[0186] The attachment device configured to attach the support film to the second side of the substrate and the protective film removal device configured to remove the protective film from the first side of the substrate can be the same single device. In this case, the same single device is used to attach the support film to the second side of the substrate and remove the protective film from the first side of the substrate. For example, the same single device can be composed of or include a mounter and a peeler system.

[0187] The external stimulus application device configured to apply the external stimulus to the supporting film and the external stimulus application device configured to apply the external stimulus to the protective film can be the same single external stimulus application device. Alternatively, a first external stimulus application device can be used to apply the external stimulus to the supporting film, and a different second external stimulus application device can be used to apply the external stimulus to the protective film.

[0188] The processing device may consist of or include a segmentation device configured to segment the substrate into a plurality of separate components from the second side of the substrate. The controller may be configured to control the segmentation device so as to segment the substrate into a plurality of separate components from the second side of the substrate. The separate components may be as described above.

[0189] The processing device, in particular the separation device, may consist of or include a cutting device, which is configured to cut the substrate along the thickness direction of the substrate. The controller may be configured to control the cutting device so as to cut the substrate along the thickness direction of the substrate. The controller may be configured to control the cutting device so as to cut the substrate along the entire thickness of the substrate, thereby completely separating the substrate, or to cut the substrate only along a portion of the thickness of the substrate.

[0190] The cutting device may consist of or include: a mechanical cutting device; and / or a laser cutting device; and / or a plasma cutting device. For example, the mechanical cutting device may consist of or include a blade or a saw.

[0191] The laser cutting device can be configured to perform laser cutting, for example, by ablative laser cutting and / or by stealth laser cutting, i.e., by applying a laser beam to form a modified region in the substrate as already described in detail above; and / or by applying a laser beam to form a plurality of hole regions in the substrate. For example, the laser cutting device can be a stealth laser cutting device.

[0192] The laser cutting device may be configured to emit a pulsed laser beam. The pulsed laser beam may have a pulse width in the range of, for example, 1 fs to 1000 ns.

[0193] The substrate processing system may further include an external force applying device configured to apply an external force to the substrate. The controller may be configured to control the external force applying device to apply the external force to the substrate. The external force applying device may consist of or include an expansion device configured to expand the supporting film (e.g., radially expand). The controller may be configured to control the expansion device so as to expand the supporting film.

[0194] The substrate processing system may further include a breaking device configured to break the substrate, in particular, to break the substrate along the region of the substrate where the modified region is formed. The controller may be configured to control the breaking device to break the substrate.

[0195] The substrate processing system may further include a pickup device configured to pick up the separated component from the support film after inspecting the first side of the substrate for defects from the first side of the substrate. The controller may be configured to control the pickup device so as to pick up the separated component from the support film after inspecting the first side of the substrate for defects from the first side of the substrate.

[0196] The substrate processing system may further include a substrate thinning device configured to thin the substrate to reduce the thickness of the substrate. The controller may be configured to control the substrate thinning device to thin the substrate. The substrate thinning device may be configured to thin the substrate before and / or after the substrate is segmented into a plurality of separate elements from the second side of the substrate. The controller may be configured to control the substrate thinning device to thin the substrate before and / or after the substrate is segmented into a plurality of separate elements from the second side of the substrate.

[0197] The substrate thinning device may consist of or include: a grinding device configured to grind the substrate from the second side of the substrate; and / or a polishing device configured to polish the substrate from the second side of the substrate; and / or an etching device configured to etch the substrate from the second side of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0198] In the following, non-limiting embodiments of the present invention are explained with reference to the accompanying drawings, in which:

[0199] Figure 1 is a perspective view showing a wafer as a substrate to be processed by the method of the present invention;

[0200] Figure 2 is a cross-sectional view showing a step of attaching a protective film to a first side of a wafer in a method according to a first embodiment of the present invention;

[0201] Figure 3 is a cross-sectional view showing a step of processing a wafer from a second side of the wafer in the method according to the first embodiment;

[0202] Figure 4 is a cross-sectional view showing a step of inspecting defects of a second side of a wafer from the second side of the wafer in the method according to the first embodiment;

[0203] Figure 5 is a cross-sectional view showing a step of cutting a protective film in the method according to the first embodiment;

[0204] Figure 6 is a cross-sectional view showing a step of attaching a supporting film to a second side of a wafer in the method according to the first embodiment;

[0205] Figure 7is a cross-sectional view showing a step of inspecting a first side of a wafer for defects through a protective film in the method according to the first embodiment;

[0206] Figure 8 is a cross-sectional view showing a step of inspecting a first side of a wafer for defects through a protective film and through a transparent chuck stage in a method according to a modification of the first embodiment;

[0207] Fig. 9 is a cross-sectional view showing a step of removing a protective film from a first side of a wafer in the method according to the first embodiment;

[0208] Fig.10 is a cross-sectional view showing a step of inspecting a first side of a wafer for defects from the first side of the wafer in the method according to the first embodiment;

[0209] Fig.11 A cross-sectional view showing a step of performing a stealth laser cutting process on a wafer from a first side of the wafer in a method according to a second embodiment of the present invention;

[0210] Fig.12 is a cross-sectional view showing a step of performing a stealth laser cutting process on a wafer from a first side of the wafer through a protective film in a method according to a third embodiment of the present invention;

[0211] Fig.13 is a cross-sectional view showing a step of performing a blade dicing process on a wafer from a second side of the wafer in a method according to a fourth embodiment of the present invention;

[0212] Fig.14 is a cross-sectional view showing a step of inspecting a second side of a wafer for defects from the second side of the wafer in the method according to the fourth embodiment;

[0213] Fig.15 is a cross-sectional view showing a step of attaching a supporting film to the second side of a wafer in a method according to a fourth embodiment;

[0214] Fig.16 is a cross-sectional view showing a step of performing a stealth laser cutting process on a wafer from a first side of the wafer through a protective film in a method according to a fourth embodiment; and

[0215] Fig.17 is a cross-sectional view showing a step of applying an external force to a wafer by radially expanding a supporting film in the method according to the fourth embodiment. DETAILED DESCRIPTION

[0216] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. Preferred embodiments relate to methods of processing substrates, and to substrate processing systems for performing these methods.

[0217] In the first to fourth embodiments, the wafer 2 (see FIG. 1 ) as a substrate Figure 1 ) is performed on the processing method of the present invention. Wafer 2 may be, for example, a MEMS wafer having a MEMS device formed on the surface of its first side 4 (i.e., the front side). However, wafer 2 is not limited to a MEMS wafer, but may also be a CMOS wafer having a CMOS device (preferably a solid-state imaging device) formed on its first side 4, or a wafer having other types of devices on the first side 4.

[0218] Wafer 2 may be made of a semiconductor (e.g., silicon (Si)). Such a silicon wafer 2 may include devices such as ICs (integrated circuits) and LSIs (large scale integrated circuits) on a silicon substrate. Alternatively, wafer 2 may be an optical device wafer configured by forming an optical device such as an LED (light emitting diode) on an inorganic material substrate such as ceramic, glass, or sapphire. Wafer 2 is not limited thereto and may be formed in any other manner. In addition, a combination of the above exemplary wafer designs is also possible.

[0219] The wafer 2 may have a thickness in the micrometer (μm) range, preferably in the range of 30 μm to 1000 μm.

[0220] The wafer 2 preferably exhibits a circular shape. However, the shape of the wafer 2 is not particularly limited. In other embodiments, the wafer 2 may have, for example, an oval, an elliptical, or a polygonal (eg, a rectangular or square) shape.

[0221] The wafer 2 is provided with a plurality of cross-cutting lines 6 formed on its first side 4 (see Figure 1 ) (also called a scribe line (street), thereby separating the wafer 2 into a plurality of rectangular areas in which devices 8 (such as those described previously) are respectively formed. These devices 8 are formed in a device area 10 of the wafer 2. In the case of a circular wafer 2, the device area 10 is preferably substantially circular and arranged concentrically with the outer circumference of the wafer 2.

[0222] As in Figure 1 Schematically shown in FIG, the device region 10 is surrounded by an annular peripheral edge region 12. No devices are formed in the peripheral edge region 12. The peripheral edge region 12 is preferably arranged concentrically with the device region 10 and / or the outer circumference of the wafer 2. The radial extension of the peripheral edge region 12 can be in the millimeter (mm) range, and preferably in the range of 1 mm to 3 mm.

[0223] The wafer 2 also has a second side 14 opposite to the first side 4, namely the back side (see Figure 1 ).

[0224] In the following, reference will be made to Figures 1 to 10 A first embodiment of the present invention is described.

[0225] As in Figure 2 As shown in the figure, the protective film 16 is attached to the first side 4 of the wafer 2. The protective film 16 covers the device 8 formed in the device area 10 and thereby protects the device 8 from, for example, contamination and damage. Optionally, before attaching the protective film 16 to the first side 4 of the wafer 2, the wafer 2 can be cut from the first side 4 along a portion of the thickness of the wafer 2, in particular along the dividing line 6. The thickness of the wafer 2 is the distance between the first side 4 and the second side 14. In this way, if one or more layers, such as a low-k layer or a metal layer, are formed on the first side 4, the one or more layers can be removed in the area where the wafer 2 (in particular along the dividing line 6) is to be divided. For example, the wafer 2 can be cut along a portion of the thickness of the wafer 2 by mechanical cutting (for example using a blade or a saw), and / or by laser cutting or laser grooving.

[0226] The protective film 16 can be made of a plastic material (e.g., a polymer). For example, the protective film 16 can be made of a polyolefin (e.g., polyethylene (PE), polypropylene (PP), or polybutylene (PB)). The protective film 16 can have a thickness in the range of 5 μm to 500 μm, preferably 5 μm to 200 μm, more preferably 8 μm to 100 μm, even more preferably 10 μm to 80 μm, and even more preferably 12 μm to 50 μm. In the present embodiment, the protective film 16 has a substantially circular shape in its top view, and has a diameter greater than the diameter of the wafer 2.

[0227] The protective film 16 may be attached to the first side 4 of the wafer 2 with an adhesive. The adhesive may be present on the entire front surface 18 of the protective film 16 that is in contact with the first side 4 of the wafer 2. For example, the protective film 16 may be a UV-curable adhesive tape. Alternatively, the protective film 16 may be attached to the first side 4 of the wafer 2 such that at least a central area of ​​the front surface 18 of the protective film 16 is in direct contact with the first side 4 of the wafer 2, so that there is no adhesive between at least a central area of ​​the front surface 18 of the protective film 16 and the first side 4 of the wafer 2. The protective film 16 may be attached to the first side 4 of the wafer 2 such that the front surface 18 of the protective film 16 is in direct contact with the first side 4 of the wafer 2 throughout the area where the front surface 18 of the protective film 16 is in contact with the first side 4 of the wafer 2. The entire front surface 18 of the protective film 16 may be free of adhesive.

[0228] The adhesive (eg, adhesive layer) may be provided only in the peripheral region of the front surface 18 of the protective film 16 , as has been detailed above. The peripheral region of the front surface 18 of the protective film 16 may be arranged to surround the central region of the front surface 18 of the protective film 16 .

[0229] The peripheral portion of the protective film 16 is attached to the annular frame 20 so that the protective film 16 closes the central opening of the annular frame 20, i.e., the area within the inner diameter of the annular frame 20. The annular frame 20 facilitates the handling of the protective film 16, particularly the handling of the protective film 16 during the process of attaching the protective film 16 to the first side 4 of the wafer 2.

[0230] The protective film 16 is attached to the first side 4 of the wafer 2 by a first attachment device, which includes a chuck stage 22 and an annular frame holder 24. The wafer 2 is supported by the chuck stage 22, and the annular frame 20 to which the protective film 16 is attached is held by the annular frame holder 24, so that the protective film 16 can be reliably and accurately attached to the first side 4 of the wafer 2. For example, the first attachment device can be a tape laminator or a tape mounter. A vacuum chamber, a pressure roller, a pressure film, a pressure sheet or a pressure block, or a combination of these elements can be used to apply pressure to the protective film 16, thereby pressing the protective film 16 against the first side 4 of the wafer 2. The first attachment device forms a part of the substrate processing system according to the present embodiment.

[0231] Attaching the protective film 16 to the first side 4 of the wafer 2 may include applying an external stimulus to the protective film, as already detailed above. For this purpose, the first attachment means may also include an external stimulus application means, such as a heating means, a cooling means, a vacuum application means and / or an irradiation means.

[0232] After attaching the protective film 16 to the first side 4 of the wafer 2, the wafer 2 is processed from the second side 14 of the wafer 2, such as Figure 3 In the present embodiment, processing the wafer 2 from the second side 14 consists of or includes the following: cutting the wafer 2 along the dividing lines 6 over the entire thickness of the wafer 2. Thus, the wafer 2 is completely divided during the cutting process, thereby obtaining a plurality of separate components in the form of chips or dies 26. Each chip or die 26 includes one of the devices 8 formed in the device region 10.

[0233] The wafer 2 is divided along the dividing line 6 by the cutting device 28 (see Figure 3 ). In the present embodiment, the cutting device 28 is a cutting blade configured to mechanically cut the wafer 2. The cutting device 28 forms a part of the substrate processing system according to the present embodiment.

[0234] Alternatively, as already detailed above, the wafer 2 may be cut along the separation lines 6 by laser cutting and / or plasma cutting. Furthermore, a series of mechanical cutting steps and / or laser cutting steps and / or plasma cutting steps may be applied.

[0235] After the wafer 2 is divided into a plurality of chips or dies 26, the second side 14 of the divided wafer 2 is inspected for defects, such as Figure 4 As shown. Possible defects to be identified when inspecting the second side 14 of the singulated wafer 2 include, for example, backside chipping, delamination of layers formed on or in the wafer material, cracks, non-straight cut lines (zigzags), burrs, whiskers, particles, contaminants, die shift (i.e., undesired movement of the chip or die 26), and die size differences (e.g., die size differences caused by undesired tilted cuts, or cut width variations due to wear of the cutting blade). This inspection step allows defects in the singulated wafer 2 that originate from the cutting process to be identified.

[0236] By the first inspection device 30 (see Figure 4 ), in particular a camera (eg a microscope camera for optical inspection), inspects the second side 14 of the singulated wafer 2 for defects from the second side 14. The first inspection device 30 forms a part of the substrate processing system according to the present embodiment.

[0237] If one or more defects are identified by inspecting the second side 14 of the wafer 2, one or more positions of the identified one or more defects are determined, thereby obtaining first position information. The substrate processing system according to the present embodiment may include a position determination device configured to perform this step. The first position information is information that specifies the position of each defect on the second side 14 of the divided wafer 2. The position of each defect can be defined in the coordinate system of the wafer 2, for example, relative to the dividing line 6 and / or the device 8.

[0238] As already described in detail above, the first position information can be associated with information about the position of each chip or die 26 in the divided wafer 2, thereby allowing to identify and track defective chips or dies 26 in a particularly accurate and efficient manner without having to inspect each chip or die 26 separately. The substrate processing system according to this embodiment can include a controller configured to perform this step. The position of each chip or die 26 in the wafer 2 can be defined in the coordinate system of the wafer 2, for example, relative to the dividing line 6 and / or the device 8.

[0239] The method of the present embodiment further includes an optional step of cutting the protective film 16 after inspecting the second side 14 of the divided wafer 2 for defects, such as Figure 5The protective film 16 is cut in a circular manner along the outer circumference of the divided wafer 2, as shown in FIG. Figure 5 As shown by the curved arrow in FIG. 2 . A film cutting device 32 (e.g., a cutting blade) is used for this cutting step. The film cutting device 32 forms a part of the substrate processing system according to the present embodiment. During the cutting process, the wafer 2 is supported by the chuck table 22 of the first attachment device, and the annular frame 20 is held by the annular frame holder 24 of the first attachment device. The cut protective film 16 is, for example, Figure 6 and Figure 7 Shown in.

[0240] By cutting the protective film 16 in this manner, the diameter of the protective film 16 is reduced so that the protective film 16 has substantially the same diameter as the wafer 2 , thereby facilitating further processing of the combination of the protective film 16 and the wafer 2 .

[0241] After cutting the protective film 16, the support film 34 is attached to the second side 14 of the singulated wafer 2, as shown in FIG. Figure 6 The support film 34 supports the singulated wafer 2 and also reliably holds the chips or dies 26 in their positions after the protective film 16 is removed from the singulated wafer 2 (see Fig. 9 ).

[0242] The supporting film 34 may be made of a plastic material, such as a polymer. For example, the supporting film 34 may be made of a polyolefin, such as polyethylene (PE), polypropylene (PP) or polybutylene (PB). The supporting film 34 may have a thickness in the range of 5 μm to 500 μm, preferably 5 μm to 200 μm, more preferably 8 μm to 100 μm, even more preferably 10 μm to 80 μm, and even more preferably 12 μm to 50 μm. In the present embodiment, the supporting film 34 has a substantially circular shape in its top view, and has a diameter greater than the diameter of the wafer 2.

[0243] The support film 34 may be attached to the second side 14 of the split wafer 2 with an adhesive. The adhesive may be present on the entire front surface 36 of the support film 34 in contact with the second side 14 of the split wafer 2. For example, the support film 34 may be a UV curable adhesive tape. Alternatively, the support film 34 may be attached to the second side 14 of the split wafer 2 such that at least a central area of ​​the front surface 36 of the support film 34 is in direct contact with the second side 14 of the split wafer 2, so that there is no adhesive between at least a central area of ​​the front surface 36 of the support film 34 and the second side 14 of the split wafer 2. The support film 34 may be attached to the second side 14 of the split wafer 2 such that the front surface 36 of the support film 34 is in direct contact with the second side 14 of the split wafer 2 throughout the area where the front surface 36 of the support film 34 is in contact with the second side 14 of the split wafer 2. The entire front surface 36 of the support film 34 may be free of adhesive.

[0244] As already detailed above, the adhesive (eg, adhesive layer) may be provided only in the peripheral region of the front surface 36 of the supporting film 34. The peripheral region of the front surface 36 of the supporting film 34 may be arranged to surround the central region of the front surface 36 of the supporting film 34.

[0245] The peripheral portion of the support film 34 is attached to the annular frame 38 so that the support film 34 closes the central opening of the annular frame 38, i.e., the area within the inner diameter of the annular frame 38. The annular frame 38 facilitates the handling of the support film 34, particularly the handling of the support film 34 during the attachment of the support film 34 to the second side 14 of the singulated wafer 2.

[0246] The support film 34 is attached to the second side 14 of the divided wafer 2 by a second attachment device, which includes a chuck table 40 and an annular frame holder 42. The divided wafer 2 is supported by the chuck table 40, and the annular frame 38 to which the support film 34 is attached is held by the annular frame holder 42, so that the support film 34 can be reliably and accurately attached to the second side 14 of the divided wafer 2. For example, the second attachment device can be a tape laminator or a tape mounter. A vacuum chamber, a pressure roller, a pressure film, a pressure sheet or a pressure block, or a combination of these elements can be used to apply pressure to the support film 34 so as to press the support film 34 against the second side 14 of the divided wafer 2. The second attachment device forms a part of the substrate processing system according to the present embodiment.

[0247] In other embodiments of the present invention, the same single attachment device may be used as both the first attachment device and the second attachment device.

[0248] As already detailed above, attaching the support film 34 to the second side 14 of the singulated wafer 2 may include applying an external stimulus to the support film. For this purpose, the second attachment means may also include an external stimulus application means, such as a heating means, a cooling means, a vacuum application means and / or an irradiation means.

[0249] In the present embodiment, after the support film 34 is attached to the second side 14 of the singulated wafer 2, an optional step of inspecting the first side 4 of the singulated wafer 2 for defects through the protective film 16 is performed, such as Figure 7 As shown. Possible defects to be identified when inspecting the first side 4 of the singulated wafer 2 through the protective film 16 include, for example, front side chipping, delamination of layers formed on or in the wafer material, cracks, non-straight cut lines (zigzags), burrs, whiskers, particles, contaminants, die shift (i.e., undesired movement of the chip or die 26), and die size differences (e.g., die size differences caused by undesired tilted cuts, or cut width variations due to wear of the cutting blade). This inspection step allows other defects in the singulated wafer 2 that originate from the cutting process to be identified.

[0250] By the second inspection device 44 (see Figure 7 ), in particular a camera (e.g. a microscope camera for optical inspection), inspects defects of the first side 4 of the singulated wafer 2 through the protective film 16. The protective film 16 is transparent to visible light. The second inspection device 44 forms part of the substrate processing system according to the present embodiment. In other embodiments of the present invention, the same single inspection device can be used as the first inspection device 30 and the second inspection device 44.

[0251] If one or more defects are identified by inspecting the first side 4 of the split wafer 2 through the protective film 16, one or more positions of the identified one or more defects are determined to obtain third position information. The substrate processing system according to the present embodiment may include a position determination device configured to perform this step. For this purpose, a position determination device configured to obtain the first position information or a different position determination device can be used. The third position information is information that specifies the position of each defect on the first side 4 of the split wafer 2. The position of each defect can be defined in the coordinate system of the wafer 2, for example, relative to the dividing line 6 and / or the device 8.

[0252] As already described in detail above, the third position information can be associated with the information about the position of each chip or die 26 in the divided wafer 2, thereby allowing defective chips or dies 26 to be identified and tracked in a more accurate and efficient manner without the need to individually inspect each chip or die 26. The controller of the substrate processing system according to the present embodiment can be configured to perform this step.

[0253] As already detailed above, the third position information can be associated with the first position information. The controller of the substrate processing system according to the present embodiment can be configured to perform this step. In this way, the nature of any one or more defects identified can be determined with particularly high accuracy. In addition, the efficiency and reliability of identifying and tracking defective chips or dies 26 can be further improved.

[0254] Figure 8 The step of inspecting the first side 4 of the divided wafer 2 through the protective film 16 for defects in the method according to the modification of the first embodiment is shown. The difference between the method of the present modification and the method of the first embodiment is that the step of inspecting the first side 4 of the divided wafer 2 through the protective film 16 for defects is performed before the step of attaching the support film 34 to the second side 14 of the wafer 2; the step of cutting the protective film 16 (see FIG. 1 ) Figure 5 ) has been omitted; through the chuck stage 46 transparent to visible light from below the wafer 2 (rather than as Figure 7 In the method for the first embodiment shown in FIG. 1 , the first side 4 of the singulated wafer 2 is inspected for defects from above the wafer 2 .

[0255] exist Figure 8 In the modified method shown in FIG. 1 , defects of the first side 4 of the divided wafer 2 are inspected through the protective film 16, and the wafer 2 is supported by the ring frame 20 via the protective film 16. In addition, the divided wafer 2 is placed on the chuck table 46. The defects of the first side 4 of the divided wafer 2 are inspected by the second inspection device 44 through the protective film 16 and through the transparent chuck table 46. The second inspection device 44 is arranged below the transparent chuck table 46, as shown in FIG. Figure 8 As shown, the second inspection device can inspect defects of the first side 4 of the divided wafer 2 from below the wafer 2. The third position information can be obtained in the same manner as described in detail above.

[0256] Inspecting the first side 4 of the singulated wafer 2 for defects by means of the second inspection device 44, through the protective film 16 and through the transparent chuck table 46, provides the advantage of allowing inspection of the first side 4 for defects immediately after singulation of the wafer 2, without having to move the wafer 2, in particular without having to remove the wafer 2 from the chuck table 46. Thus, the inspection process can be performed in a particularly accurate and reliable manner.

[0257] If the second side 14 of the separated wafer 2 is inspected for defects by the first inspection device 30 from above the wafer 2 (see Figure 4 ), and inspect the defects of the first side 4 of the divided wafer 2 by passing through the protective film 16 from below the wafer 2 and through the transparent chuck stage 46 through the second inspection device 44 (see Figure 8 ), the two inspection processes can be performed without moving the wafer 2, in particular without removing the wafer 2 from the chuck table 46. Therefore, the process of obtaining position information and the process of associating position information can be performed in a particularly accurate and reliable manner.

[0258] Alternatively, as already detailed above, the same single inspection device may be used as the first inspection device 30 and the second inspection device 44 .

[0259] In the modified method, after inspecting the first side 4 of the divided wafer 2 for defects through the protective film 16 and through the transparent chuck stage 46, the support film 34 is attached to the second side 14 of the divided wafer 2 in substantially the same manner as described in detail above for the method of the first embodiment. In addition, subsequent steps, particularly the steps of removing the protective film 16 from the first side 4 of the divided wafer 2 and then inspecting the first side 4 of the divided wafer 2 for defects from the first side 4 of the divided wafer 2, are substantially the same as those described below for the method of the first embodiment.

[0260] After inspecting the first side 4 of the divided wafer 2 for defects through the protective film 16 in the method of the first embodiment and the modified method of the first embodiment, the protective film 16 is removed (ie, peeled off) from the first side 4 of the divided wafer 2, as shown in FIG. Fig. 9 shown.

[0261] The protective film 16 is removed from the first side 4 of the divided wafer 2 by the protective film removal device 48. The protective film removal device 48 is configured to hold the protective film 16 at the peripheral portion of the protective film 16 and pull the portion in the direction of the first side 4 of the divided wafer 2, as shown in FIG. Fig. 9 As shown by the arrow in the middle, the protective film 16 is removed from the first side 4 of the divided wafer 2. The protective film removing device 48 forms a part of the substrate processing system according to the present embodiment.

[0262] By removing the protective film 16 from the first side 4 of the divided wafer 2, particles (e.g., fragments or pieces) that have been separated from the wafer 2 during the cutting process but remain on the wafer 2 due to the presence of the protective film 16 can also be removed. In particular, these particles may adhere to the protective film 16, for example, due to the presence of an adhesive on the protective film 16 or due to material bonding between the particles and the protective film 16, so that these particles are removed from the divided wafer 2 together with the protective film 16. Therefore, the amount of particles present on the chip or die 26 when picking up the chip or die 26 from the support film 34 is greatly reduced. The chip or die 26 may even be substantially free of these particles. Therefore, a chip or die 26 with high quality is obtained, and further processing, handling and / or transportation of the chip or die 26 can be made much more efficient. For example, the chip or die 26 can be put into use directly after they are picked up from the support film 34, for example, assembled into a semiconductor packaging device or incorporated into an electronic device. Furthermore, as will be described in detail below, the accuracy and reliability of the inspection of the first side 4 of the singulated wafer 2 may be further improved.

[0263] During and after the step of removing the protective film 16 from the first side 4 of the singulated wafer 2 , the chips or dies 26 are securely held in their position by the support film 34 .

[0264] After the protective film 16 is removed from the first side 4 of the singulated wafer 2, the first side 4 of the singulated wafer 2 is inspected for defects, such as Fig.10As shown. Possible defects to be identified when inspecting the first side 4 of the divided wafer 2 include, for example, front side chipping, delamination of layers formed on or in the wafer material, cracks, non-straight cut lines (zigzags), burrs, whiskers, particles, contaminants, die shifting (i.e., unexpected movement of the chip or die 26), and die size differences (e.g., die size differences caused by unexpected tilted cuts, or changes in cut width due to wear of the cutting blade). This inspection step allows defects in the divided wafer 2 originating from the cutting process to be identified with greater accuracy. In particular, as already detailed above, removing the protective film 16 from the first side 4 of the divided wafer 2 results in or enables the removal of particles (e.g., fragments or debris) that have been separated from the wafer 2 during the cutting process. This allows the detection of defects in the divided wafer 2 that might not have been identified before the protective film 16 was removed.

[0265] By the third inspection device 50 (see Fig.10 ), in particular a camera (e.g. a microscope camera for optical inspection), to inspect defects on the first side 4 of the divided wafer 2. The third inspection device 50 forms part of the substrate processing system according to the present embodiment. In other embodiments of the present invention, the same single inspection device can be used as the first inspection device 30, the second inspection device 44 and the third inspection device 50. The same single inspection device can be used as the first inspection device 30 and the third inspection device 50.

[0266] If one or more defects are identified by inspecting the first side 4 of the split wafer 2, one or more positions of the one or more identified defects are determined to obtain second position information. The substrate processing system according to the present embodiment may include a position determining device configured to perform this step. For this purpose, a position determining device configured to obtain the first position information, a position determining device configured to obtain the third position information, or a different position determining device can be used. The second position information is information that specifies the position of each defect on the first side 4 of the split wafer 2. The position of each defect can be defined in the coordinate system of the wafer 2, for example, relative to the dividing line 6 and / or the device 8.

[0267] As already described in detail above, the second position information can be associated with the information about the position of each chip or die 26 in the divided wafer 2, thereby allowing defective chips or dies 26 to be identified and tracked in a more accurate and efficient manner without the need to individually inspect each chip or die 26. The controller of the substrate processing system according to the present embodiment can be configured to perform this step.

[0268] As already described in detail above, the second position information may be associated with the first position information and / or the third position information. The controller of the substrate processing system according to the present embodiment may be configured to perform this step. In this way, the nature of any one or more identified defects may be determined with greater accuracy. In addition, the efficiency and reliability of identifying and tracking defective chips or dies 26 may be further improved.

[0269] After inspecting the first side 4 of the singulated wafer 2 for defects from the first side 4, the chips or dies 26 are picked up from the support film 34. Since the defective chips or dies 26 are reliably and accurately identified and tracked by the inspection steps as already detailed above, these chips or dies 26 can be effectively separated and rejected. Those chips or dies 26 in which no defects are detected can be directly put into use after they are picked up from the support film 34, for example, assembled into a semiconductor package device or incorporated into an electronic device, as also described in detail above.

[0270] The substrate processing system according to the present embodiment may further include a pickup device configured to pick up the chips or dies 26 from the support film 34 after inspecting the first side 4 of the singulated wafer 2 for defects from the first side 4 .

[0271] Next, we will refer to Fig.11 A second embodiment of the present invention is described.

[0272] The method of the second embodiment differs from the method of the first embodiment in that the invisible laser cutting step is performed before the protective film 16 is attached to the first side 4 of the wafer 2, and the wafer 2 may not be cut along the entire thickness of the wafer 2 in the cutting step (see Figure 3 ). The remaining steps of the method of the first embodiment are performed in the same manner as the method of the second embodiment. Therefore, repeated detailed descriptions thereof are omitted.

[0273] In particular, in the method of the second embodiment, before attaching the protective film 16 to the first side 4, an invisible laser cutting step is performed from the first side 4 of the wafer 2 along the dividing lines 6, such as Fig.11 As shown. In this step, a laser beam LB having a wavelength that allows the laser beam LB to be transmitted through the wafer 2 is applied to the wafer 2. The laser beam LB is applied to the wafer 2 in multiple positions along the dividing line 6 so as to form multiple modified areas along the dividing line 6 in the wafer 2. By forming these modified areas, the strength of the wafer 2 in the area where the modified areas are formed is reduced. Therefore, the division of the wafer 2 along the dividing line 6 in the subsequent cutting step or the subsequent separation step is greatly facilitated.

[0274] The laser beam LB may be a pulsed laser beam. The pulsed laser beam may have a pulse width in the range of, for example, 1 fs to 1000 ns.

[0275] The laser beam LB is applied to the wafer 2 by the invisible laser cutting device 52 (see Fig.11 ). The invisible laser cutting device 52 forms a part of the substrate processing system according to the present embodiment.

[0276] In the step of cutting the wafer 2 from the second side 14 of the wafer 2, the wafer 2 may be cut along only a portion (e.g., half) of the thickness of the wafer 2. For this cutting step, a cutting device 28 in the form of a cutting blade configured to mechanically cut the wafer 2 is used (see Figure 3 The mechanical cutting load applied by the cutting device 28 to the wafer 2 may help cracks in the wafer 2 generated during the stealth laser cutting step to propagate to the first side 4 of the wafer 2 , thereby completely dividing the wafer 2 into separate chips or dies 26 .

[0277] Alternatively, in the cutting step, the wafer 2 may be cut along the entire thickness of the wafer 2, for example by mechanical cutting and / or laser cutting and / or plasma cutting. In this case, the presence of the modified zone along the separation line 6 facilitates the cutting process due to the local reduction in the strength of the wafer 2.

[0278] In the step of inspecting the first side 4 of the wafer 2 for defects through the protective film 16 (see Figure 7 and Figure 8 ) and / or a step of inspecting defects of the first side 4 of the wafer 2 from the first side 4 of the wafer 2 after removing the protective film 16 (see Fig.10 ), it can be identified whether the cracks in the wafer 2 generated in the invisible laser cutting step have propagated to the first side 4 of the wafer 2.

[0279] If it is identified in one or both of these inspection steps that these cracks have not yet propagated to the first side 4 of the wafer 2, or that the wafer 2 has not yet been completely separated into separate chips or dies 26 by crack propagation, the defects from the first side 4 of the wafer 2 can be inspected after removing the protective film 16, and then a separation step is performed. In this separation step, an external force can be applied to the wafer 2, in particular by expanding the support film 34 (for example, radially expanding), that is, by using the support film 34 as an expansion belt. In this way, the wafer 2 can be completely separated into separate chips or dies 26 along the separation line 6. For the method of the fourth embodiment of the present invention, reference will be made below. Fig.17 This step of expanding, in particular radially expanding, the supporting membrane 34 is explained in more detail.

[0280] If it is identified in the step of inspecting the first side 4 of the wafer 2 for defects through the protective film 16 that the crack has not yet propagated to the first side 4 of the wafer 2 or that the wafer 2 has not yet been completely separated into separate chips or dies 26 by the crack propagation, the separation step can be performed before inspecting the first side 4 of the wafer 2 for defects from the first side 4 of the wafer 2 after removing the protective film 16. In this case, any defects in the wafer 2 that may be caused by the separation step can be reliably identified in this later inspection step.

[0281] Optionally, before expanding the supporting film 34 , a breaking step may be performed on the wafer 2 in order to break the wafer 2 along the separation lines 6 .

[0282] Furthermore, if the wafer 2 is completely separated into chips or dies 26 during the dicing process (see Figure 3 ), a step of expanding (e.g. radially expanding) the support film 34 may be performed before or after inspecting the first side 4 of the wafer 2 for defects from the first side 4. In this way, the separated chips or dies 26 may be moved away from each other, thereby increasing the distance between adjacent chips or dies 26. Increasing the die-to-die distance in this way particularly reliably ensures that the chips or dies 26 are not damaged during the step of picking them up from the support film 34.

[0283] Next, we will refer to Fig.12 A third embodiment of the present invention is described.

[0284] The method of the third embodiment differs from the method of the second embodiment only in the order of the steps of attaching the protective film 16 to the first side 4 of the wafer 2 and performing the invisible laser cutting step on the wafer 2. The remaining steps of the method of the second embodiment are performed in the same manner as the method of the third embodiment. Therefore, repeated detailed descriptions thereof are omitted.

[0285] Specifically, in the method of the third embodiment, the protective film 16 is first attached to the first side 4 of the wafer 2 (see Figure 2 ). After this attachment step, but before dicing the wafer 2 from the second side 14 of the wafer 2 (see Figure 3 ), the invisible laser cutting step is performed from the first side 4 of the wafer 2 along the dividing line 6 in substantially the same manner as in the method of the second embodiment. The only difference is that the laser beam LB is applied to the wafer 2 through the protective film 16, as shown in FIG. Fig.12 Therefore, the wavelength of the laser beam LB is selected so that the laser beam LB is transmitted through the protective film 16, that is, so that the protective film 16 is transparent to the laser beam LB.

[0286] Next, we will refer to Figures 13 to 17 A fourth embodiment of the present invention is described.

[0287] The method of the fourth embodiment differs from the method of the first embodiment in that: in the cutting step (see Figure 3 ), the wafer 2 is cut only from the second side 14 along a portion of the thickness of the wafer 2, and the invisible laser cutting step is performed on the wafer 2 after the support film 34 is attached to the second side 14 of the wafer 2. The remaining steps of the method of the first embodiment are performed in the same manner as the method of the fourth embodiment. Therefore, a repeated detailed description thereof is omitted.

[0288] In particular, in the method of the fourth embodiment, as described above with respect to the method of the first embodiment, the protective film 16 is attached to the first side 4 of the wafer 2 (see Figure 2 ). Subsequently, the wafer 2 is cut along the dividing line 6 from the second side 14 of the wafer 2 by the cutting device 28. In this step, the wafer 2 is cut only along a portion of the thickness of the wafer 2, so that the wafer 2 is not completely divided during the cutting process. Instead, a cutting groove 54 is provided, which extends from the second side 14 of the wafer 2 toward the first side 4 of the wafer 2, but does not reach the first side 4.

[0289] Alternatively, as already detailed above, the wafer 2 may be cut by laser cutting and / or plasma cutting along a portion of its thickness along the separation lines 6. Furthermore, a sequence of mechanical cutting steps and / or laser cutting steps and / or plasma cutting steps may be applied.

[0290] After the wafer 2 is cut along a portion of the thickness of the wafer 2 along the dividing line 6, the second side 14 of the partially cut wafer 2 is inspected for defects from the second side 14 of the wafer 2 by the first inspection device 30, such as Fig.14 This inspection step and the subsequent steps of obtaining first position information and associating this information with information about the position of each chip or die 26 to be obtained from the wafer 2 are performed in the same manner as described above for the method of the first embodiment.

[0291] After inspecting the second side 14 of the partially cut wafer 2 for defects from the second side 14 of the wafer 2, an optional step of cutting the protective film 16 in a circular manner along the outer circumference of the wafer 2 is performed in the same manner as in the first embodiment (see Figure 5 ). Subsequently, the support film 34 is attached to the second side 14 of the partially cut wafer 2 by a second attachment device including a chuck table 40 and an annular frame holder 42, as shown in FIG. Fig.15 In addition, this later step is carried out in the same manner as described above for the method of the first embodiment (see also Figure 6 ) is performed in the same manner as described.

[0292] After attaching the support film 34 to the second side 14 of the partially cut wafer 2, an invisible laser cutting step is performed from the first side 4 of the wafer 2 through the protective film 16 along the separation lines 6, as shown in FIG. Fig.16 In substantially the same manner as described above with respect to the third embodiment (see also Fig.12 ) is performed in the same manner as described above, a laser beam LB having a wavelength that allows the laser beam LB to be transmitted through the protective film 16 and through the wafer 2 is applied to the wafer 2 by the invisible laser cutting device 52. The laser beam LB is applied to the wafer in a plurality of locations along the dividing line 6 where the cutting grooves 54 are formed (see FIG. Fig.13 ) so as to form a plurality of modified areas along the dividing lines 6 in the wafer 2. The modified areas are formed in the remaining portion of the wafer 2 along the dividing lines 6, which is not cut in the cutting step, that is, the modified areas are formed above the cutting grooves 54 in the direction from the first side 14 of the wafer 2 toward the first side 4 of the wafer 2.

[0293] By forming these modified areas, the strength of the rest of the wafer 2 is reduced. Cracks in the wafer 2 generated during the invisible laser dicing step may propagate to the first side 4 of the wafer 2 and to the bottom of the dicing grooves 54, thereby completely dividing the wafer 2 into separate chips or dies 26 (see FIG. Fig.17 ). Alternatively, the wafer 2 may not be completely separated during the stealth laser cutting process.

[0294] After performing the invisible laser cutting step from the first side 4 of the wafer 2 along the dividing line 6 through the protective film 16, the method described above for the first embodiment (see Fig. 9 ) is removed, i.e., peeled off, from the first side 4 of the wafer 2 in the same manner as described above.

[0295] After removing the protective film 16 from the first side 4 of the wafer 2, the method of the first embodiment described above (see Fig.10 ) In the same manner as described above for the method of the first embodiment, the first side 4 of the wafer 2 is inspected for defects from the first side 4 of the wafer 2. Furthermore, the subsequent steps of acquiring second position information in the wafer 2 and associating the information with the first position information and with the information about the position of each chip or die 26 to be obtained from the wafer 2 are performed in the same manner as described above for the method of the first embodiment.

[0296] After removing the protective film 16 from the first side 4 of the wafer 2, a separation step is performed, such as Fig.17As shown. The separation step can be performed before or after inspecting the first side 4 of the wafer 2 for defects. In this separation step, the support film 34 is radially expanded, i.e., acts as an expansion belt. If the wafer 2 is not completely separated in the invisible laser cutting step, the radial expansion of the support film 34 applies external force to the wafer 2, thereby completely separating the wafer 2 into individual chips or dies 26 along the separation line 6 (see FIG. 2 ). Fig.17 ). If the wafer 2 has been completely separated in the invisible laser cutting step, the radial expansion of the support film 34 moves the separated chips or dies 26 away from each other, thereby increasing the distance between adjacent chips or dies 26. Increasing the die-to-die distance in this way particularly reliably ensures that the chips or dies 26 are not damaged in the subsequent step of picking up the chips or dies 26 from the support film 34.

[0297] If the separation step is performed after inspecting the first side 4 of the wafer 2 for defects, it can be identified in this inspection step whether the cracks in the wafer 2 generated in the invisible laser cutting step have propagated to the first side 4 of the wafer 2, as described in detail above for the method of the second embodiment.

[0298] If the separation step is performed before inspecting the first side 4 of the wafer 2 for defects from the first side 4 of the wafer 2 , any defects in the wafer 2 that may be caused by the separation step can be reliably identified in this inspection step.

[0299] The support membrane 34 is radially expanded by an expansion device comprising an expansion drum 56 (see Fig.17 ). During the expansion process, the upper edge of the expansion drum 56 contacts a portion of the support film 34 arranged along the outer circumference of the wafer 2 from below the support film 34. Subsequently, the expansion drum 56 and the annular frame 38 to which the support film 34 is attached move relative to each other in the vertical direction, that is, in the direction from the second side 14 of the wafer 2 toward the first side 4 of the wafer 2. In particular, as Fig.17 As shown by the arrow in , the expansion drum 56 moves upward and / or the annular frame 38 moves downward. In this way, the supporting film 34 is radially expanded. The expansion device forms a part of the substrate processing system according to the present embodiment.

[0300] In other embodiments of the method and system of the present invention, different expansion devices, such as expansion rods, can be used to expand the support membrane 34. For example, the expansion equipment described in DE 10 2018 207 498 A1 can be used as an expansion device for expanding the support membrane 34.

[0301] Optionally, before expanding (eg radially expanding) the supporting film 34 , a breaking step may be performed on the wafer 2 so as to break the wafer 2 along the dividing lines 6 .

[0302] As described above for the method of the first embodiment, after expanding the support film 34 , the chip or die 26 is picked up from the support film 34 .

[0303] The method of the fourth embodiment may be modified by changing the order of the step of performing the invisible laser cutting step from the first side 4 of the wafer 2 along the dividing line 6 and the step of removing the protective film 16 from the first side 4 of the wafer 2. Specifically, in the modified method, the protective film 16 is removed from the first side 4 of the wafer 2 before the invisible laser cutting step is performed from the first side 4 of the wafer 2. Therefore, the laser beam LB is directly applied to the wafer 2 in the same manner as the method of the second embodiment described above, i.e., it is not necessary to pass through the protective film 16 (see Fig.11 ). The remaining steps of the modified method are the same as the remaining steps of the method according to the fourth embodiment.

[0304] The methods and systems according to the above-described first to fourth embodiments may be modified by using the protective film 16 and / or the supporting film 34 having a buffer layer, or the protective film 16 and / or the supporting film 34 having a buffer layer and a substrate attached thereto as has been described in detail above.

[0305] In the methods and systems according to the above-described first to fourth embodiments, processing is performed on the back side of the substrate, ie, the wafer 2. However, in other embodiments of the present invention, the substrate may be processed from the front side of the substrate.

Claims

1. A method for processing a substrate (2), the substrate (2) having a first side (4) and a second side (14) opposite to the first side (4), wherein: The method comprises: attaching a protective film (16) to the first side (4) of the substrate (2); After attaching the protective film (16) to the first side (4) of the substrate (2), processing the substrate (2) from the second side (14) of the substrate (2); After processing the substrate (2) from the second side (14) of the substrate (2), inspecting the second side (14) of the substrate (2) for defects from the second side (14) of the substrate (2); After inspecting the second side (14) of the substrate (2) for defects, attaching a support film (34) to the second side (14) of the substrate (2); removing the protective film (16) from the first side (4) of the substrate (2); and After removing the protective film (16) from the first side (4) of the substrate (2), inspecting the first side (4) of the substrate (2) for defects from the first side (4) of the substrate (2), The substrate (2) has a device region (10) on the first side (4), and the device region has a plurality of devices (8).

2. The method according to claim 1, further comprising: Before removing the protective film (16) from the first side (4) of the substrate (2), the first side (4) of the substrate (2) is inspected for defects through the protective film (16).

3. The method according to claim 2, wherein: Before or after attaching the support film (34) to the second side (14) of the substrate (2), inspecting the first side (4) of the substrate (2) for defects through the protective film (16) is performed.

4. The method according to any one of claims 1 to 3, further comprising: If one or more defects are identified by inspecting the defects of the second side (14) of the substrate (2) from the second side (14) of the substrate (2), one or more positions of the identified one or more defects are determined to obtain first position information; and / or If one or more defects are identified by inspecting the defects of the first side (4) of the substrate (2) from the first side (4) of the substrate (2), one or more positions of the identified one or more defects are determined to obtain second position information. The method of claim 4 , further comprising associating the first location information with the second location information.

6. The method according to any one of claims 1 to 3, wherein: Inspecting the second side (14) of the substrate (2) for defects from the second side (14) of the substrate (2) using an inspection device (30), and The inspection device (30) is also used to inspect defects on the first side (4) of the substrate (2) from the first side (4) of the substrate (2).

7. The method according to any one of claims 1 to 3, wherein: The supporting film (34) is attached to the second side (14) of the substrate (2) so that at least a central area of ​​a front surface (36) of the supporting film (34) is in direct contact with the second side (14) of the substrate (2), so that no adhesive exists between at least the central area of ​​the front surface (36) of the supporting film (34) and the second side (14) of the substrate (2).

8. The method according to any one of claims 1 to 3, wherein: The substrate (2) is a wafer.

9. The method according to any one of claims 1 to 3, wherein: The substrate (2) is a semiconductor wafer.

10. The method according to any one of claims 1 to 3, wherein: The protective film (16) is attached to the first side (4) of the substrate (2) so that at least a central area of ​​a front surface (18) of the protective film (16) is in direct contact with the first side (4) of the substrate (2), so that no adhesive exists between at least the central area of ​​the front surface (18) of the protective film (16) and the first side (4) of the substrate (2).

11. The method according to any one of claims 1 to 3, wherein: Processing the substrate (2) from the second side (14) of the substrate (2) consists of or includes dividing the substrate (2) into a plurality of separate components (26) from the second side (14) of the substrate (2).

12. The method according to claim 11, wherein: Dividing the substrate (2) into the plurality of separate elements (26) consists of or includes: cutting the substrate (2) along a thickness direction of the substrate (2), the thickness direction extending from the second side (14) of the substrate (2) toward the first side (4) of the substrate (2).

13. The method according to claim 12, wherein: Cutting the substrate (2) along the thickness direction of the substrate (2) consists of or includes the following: The substrate (2) is cut mechanically, and / or the substrate (2) is cut by laser, and / or the substrate (2) is cut by plasma.

14. The method according to claim 11, further comprising: After inspecting the first side (4) of the substrate (2) for defects from the first side (4) of the substrate (2), the separated element (26) is picked up from the supporting film (34).

15. The method according to claim 12 or 13, further comprising: After inspecting the first side (4) of the substrate (2) for defects from the first side (4) of the substrate (2), the separated element (26) is picked up from the supporting film (34).

16. The method according to any one of claims 1 to 3, wherein: Processing the substrate (2) from the second side (14) of the substrate (2) consists of or includes: The substrate (2) is thinned so as to reduce the thickness of the substrate (2).

17. A system for processing a substrate (2), the substrate (2) having a first side (4) and a second side (14) opposite the first side (4), wherein: The system comprises: an attachment device configured to attach a protective film (16) to the first side (4) of the substrate (2); a processing device (28) configured to process the substrate (2) from the second side (14) of the substrate (2) after attaching the protective film (16) to the first side (4) of the substrate (2); an inspection device (30) configured to inspect defects of the second side (14) of the substrate (2) from the second side (14) of the substrate (2) after processing the substrate (2) from the second side (14) of the substrate (2); an attachment device configured to attach a support film (34) to the second side (14) of the substrate (2) after inspecting the second side (14) of the substrate (2) for defects; a protective film removal device (48) configured to remove the protective film (16) from the first side (4) of the substrate (2); and an inspection device (50) configured to inspect defects of the first side (4) of the substrate (2) from the first side (4) of the substrate (2) after removing the protective film (16) from the first side (4) of the substrate (2), The substrate (2) has a device region (10) on the first side (4), and the device region has a plurality of devices (8).

18. The system of claim 17, wherein: The inspection device (30) configured to inspect the second side (14) of the substrate (2) and the inspection device (50) configured to inspect the first side (4) of the substrate (2) are the same single inspection device.

19. The system according to claim 17 or 18, wherein: The attachment means configured to attach the protective film (16) to the first side (4) of the substrate (2) and the attachment means configured to attach the support film (34) to the second side (14) of the substrate (2) are the same single attachment means.

Images