Inductive structure and method of manufacturing the same

Abstract

The present application discloses an inductor structure and a manufacturing method thereof. The inductor structure includes a plurality of conductive layers and a plurality of conductive elements. The conductive layers are overlapped in a vertical direction. The conductive elements are coupled between two of the conductive layers.

Description

Technical Field

[0001] This invention relates to an inductor structure and its manufacturing method. Background Technology

[0002] In recent years, the size of semiconductor devices has been gradually shrinking. In semiconductor technology, improvements in feature size, speed, performance, density, and cost per unit of integrated circuit are all crucial goals. In practical applications, while shrinking device size, it is still necessary to maintain the device's electrical performance to meet commercial requirements. Summary of the Invention

[0003] This invention relates to an inductor structure and a method for manufacturing the same. The inductor structure can have a small layout area.

[0004] According to one aspect of the invention, an inductor structure is provided, comprising a plurality of conductive layers and a plurality of conductive elements. The conductive layers overlap in a vertical direction. Each conductive element is coupled between two of the conductive layers.

[0005] According to another aspect of the present invention, a method for manufacturing an inductor structure is provided, comprising the following steps: forming a plurality of conductive layers; the conductive layers overlapping in a vertical direction; forming a plurality of conductive elements on the conductive layers; each conductive element being coupled between two of the conductive layers.

[0006] To provide a better understanding of the above and other aspects of the present invention, specific embodiments are described below in conjunction with the accompanying drawings: Attached Figure Description

[0007] Figure 1 A perspective view of the inductor structure in one embodiment is shown.

[0008] Figure 2 A perspective view of the inductor structure in another embodiment is shown.

[0009] Figures 3-11C A method for manufacturing an inductor structure in one embodiment is illustrated.

[0010] Figures 12-17B A method for manufacturing an inductor structure in another embodiment is illustrated.

[0011] [Symbol Explanation]

[0012] 100, 110, 120, 130, 140: Conductive layer

[0013] 101, 111, 121, 131, 141: First conductive branch

[0014] 102, 112, 122, 132, 142: Second conductive branch

[0015] 103, 113, 123, 133, 143: conductive stem

[0016] 200, 201, 203, 204, 212, 223, 234: conductive element

[0017] 300: conductive post

[0018] 311, 321, 331: first conductive post

[0019] 312, 322, 332, 342: second conductive post

[0020] 341: conductive post

[0021] 400, 401, 403, 404, 412, 423, 434: conductive line

[0022] 501: first signal terminal

[0023] 502: second signal terminal

[0024] 600: stepped structure

[0025] 601, 611: first stepped structure

[0026] 602, 612: second stepped structure

[0027] 750: substrate

[0028] 752: recess

[0029] 754: insulating layer

[0030] 7541: first insulating branch

[0031] 7542: second insulating branch

[0032] 7543: insulating stem

[0033] 756: material layer

[0034] 758: stack structure

[0035] 760: dielectric element

[0036] 762: cup structure

[0037] 7621: first wall portion

[0038] 7622: second wall portion

[0039] 7623: third wall portion

[0040] 7624: fourth wall portion

[0041] 7625: bottom portion

[0042] 764: first trench

[0043] 766: insulating element

[0044] 768: second trench

[0045] 770: slit

[0046] 772: laminated structure

[0047] 7721: first laminated branch

[0048] 7722: second laminated branch

[0049] 7723: laminated stem

[0050] 774, 776: dielectric film

[0051] 778: insulating post

[0052] 780U: shaped structure

[0053] 782: barrier layer

[0054] D1: first horizontal direction

[0055] D2: second horizontal direction

[0056] Z: vertical direction DETAILED DESCRIPTION

[0057] The following is described with some embodiments. It should be noted that the present application does not show all possible embodiments, and other embodiments not presented in the present application can also be applicable. Furthermore, the dimensional proportions on the drawings are not drawn in accordance with the actual product proportions. Therefore, the description and drawings are only for describing the embodiments, and are not used to limit the scope of protection of the present application. In addition, the descriptions in the embodiments, such as local structures, process steps, and material applications, etc., are only for illustrative purposes, and are not used to limit the scope of protection of the present application. The steps and structures of the embodiments can be changed and modified according to the actual application process needs without departing from the spirit and scope of the present application. The same / similar symbols are used to represent the same / similar elements.

[0058] Please refer to Figure 1 , which shows a perspective view of an inductance structure in an embodiment.

[0059] The conductive layer 100 can include the conductive layer 110, the conductive layer 120, and the conductive layer 130 separated from each other. The conductive layer 100 can have a U shape. The conductive layer 100 includes a first conductive branch 101, a second conductive branch 102, and a conductive stem 103. The conductive layer 110 includes a first conductive branch 111, a second conductive branch 112, and a conductive stem 113. The conductive stem 113 is coupled between the first conductive branch 111 and the second conductive branch 112. The conductive layer 120 includes a first conductive branch 121, a second conductive branch 122, and a conductive stem 123. The conductive stem 123 is coupled between the first conductive branch 121 and the second conductive branch 122. The conductive layer 130 includes a first conductive branch 131, a second conductive branch 132, and a conductive stem 133. The conductive stem 133 is coupled between the first conductive branch 131 and the second conductive branch 132.

[0060] The first conductive branch 101 (including the first conductive branch 111, the first conductive branch 121, and the first conductive branch 131) and the second conductive branch 102 (including the second conductive branch 112, the second conductive branch 122, and the second conductive branch 132) extend in the vertical direction Z and can be separated from each other in the first horizontal direction D1. The conductive stems 103 (including the conductive stem 113, the conductive stem 123, and the conductive stem 133) extend in the first horizontal direction D1 and can be separated from each other in the vertical direction Z. The first conductive branch 111, the first conductive branch 121, and the first conductive branch 131 are adjacent to each other. The first conductive branch 111, the first conductive branch 121, and the first conductive branch 131 are on the same side of the conductive stem 103. The second conductive branch 112, the second conductive branch 122, and the second conductive branch 132 are adjacent to each other. The second conductive branch 112, the second conductive branch 122, and the second conductive branch 132 are on the same other side of the conductive stem 103. The conductive stems 113, 123, and 133 are adjacent to each other. The conductive stems 113, 123, and 133 overlap each other in the vertical direction Z. The first conductive branch 101 and the second conductive branch 102 overlap each other in the first horizontal direction D1. The first conductive branch 101 and the second conductive branch 102 do not overlap each other in the vertical direction Z. The upper conductive surfaces of the first conductive branch 101 and the second conductive branch 102 can be flush.

[0061] Conductive element 200 may include conductive element 212, conductive element 223, conductive element 201, and conductive element 203. Conductive element 212 may include a first conductive post 311, a second conductive post 322, and a conductive wire 412. The first conductive post 311 may be on the upper conductive surface of the first conductive branch 111. The second conductive post 322 may be on the upper conductive surface of the second conductive branch 122. The conductive wire 412 is coupled between the first conductive post 311 and the second conductive post 322. Conductive element 223 may include a first conductive post 321, a second conductive post 332, and a conductive wire 423. The first conductive post 321 may be on the upper conductive surface of the first conductive branch 121. The second conductive post 332 may be on the upper conductive surface of the second conductive branch 132. The conductive wire 423 is coupled between the first conductive post 321 and the second conductive post 332. Conductive element 201 may include a second conductive post 312 and a conductive wire 401. The second conductive post 312 may be on the upper conductive surface of the second conductive branch 112. Conductive wire 401 may be on the second conductive post 312. Conductive element 203 may include first conductive post 331 and conductive wire 403. First conductive post 331 may be on the upper conductive surface of first conductive branch 131. Conductive wire 403 may be on first conductive post 331. Conductive posts 300 (including first conductive post 311, first conductive post 321, first conductive post 331, second conductive post 312, second conductive post 322, and second conductive post 332) may have the same dimension (i.e., height) in the vertical direction Z.

[0062] The coil inductor includes conductive layers 110, 120, and 130, conductive elements 212 and 223. Conductive layers 110, 120, and 130 overlap in the vertical direction Z, thus allowing the coil inductor to occupy a small layout area. Conductive layers 110, 120, and 130 can be separated by an insulating layer (e.g., Figure 11B and Figure 11C The insulating layers 754 shown are separated from each other. Conductive wire 403 can be coupled between the first signal terminal 501 and the first conductive post 331. Conductive wire 401 can be coupled between the second signal terminal 502 and the second conductive post 312. The first signal terminal 501 is one of a current input terminal and a current output terminal. The second signal terminal 502 is the other of a current input terminal and a current output terminal. The coil inductance can induce a magnetic field in the second horizontal direction D2. In this embodiment, the coil inductance is not limited to... Figure 1 The diagram shows a three-coil structure. Coil inductors can also have other coil structures formed by other numbers of conductive layers 100 and conductive elements 200, such as four-coil, five-coil, or more coil structures. Coil inductors can also be referred to as three-dimensional inductors.

[0063] Please refer to Figure 2 The diagram illustrates a perspective view of the inductor structure in another embodiment.Figure 2 Inductor structure and Figure 1 The differences between the inductor structures are explained below.

[0064] The conductive layer 100 may include conductive layers 110, 120, 130, and 140 that are separated from each other and overlap in the vertical direction Z. The conductive layers 110, 120, 130, and 140 may be connected by an insulating layer (e.g., Figure 17B The insulating layers 754 shown are separated from each other. The conductive layer 140 includes a first conductive branch 141, a second conductive branch 142, and a conductive core 143. The conductive core 143 is coupled between the first conductive branch 141 and the second conductive branch 142.

[0065] Conductive branches 103 (including conductive branches 113, 123, 133, and 143) may extend in a first horizontal direction D1. Conductive branches 113, 123, 133, and 143 may have the same dimensions in the first horizontal direction D1. First conductive branches 101 (including first conductive branches 111, 121, 131, and 141) and second conductive branches 102 (including second conductive branches 112, 122, 132, and 142) may extend in a second horizontal direction D2. The first horizontal direction D1 may differ from the second horizontal direction D2. For example, the first horizontal direction D1 may be perpendicular to the second horizontal direction D2.

[0066] Conductive element 200 may include conductive element 212, conductive element 223, conductive element 201, conductive element 234, and conductive element 204. Conductive element 234 may include a first conductive post 331, a second conductive post 342, and a conductive wire 434. Conductive element 204 may include a conductive post 341 and a conductive wire 404. The conductive wire 404 is coupled between the conductive post 341 and the first signal terminal 501.

[0067] The coil inductor includes conductive layer 110, conductive layer 120, conductive layer 130, conductive layer 140, conductive element 212, conductive element 223 and conductive element 234.

[0068] The first ladder structure 601 can include the first conductive branch 111, the first conductive branch 121, the first conductive branch 131, and the first conductive branch 141 arranged in sequence from bottom to top. The first conductive branch 111, the first conductive branch 121, the first conductive branch 131, and the first conductive branch 141 overlap in the vertical direction Z and are separated from each other. The second ladder structure 602 can include the second conductive branch 112, the second conductive branch 122, the second conductive branch 132, and the second conductive branch 142 arranged in sequence from bottom to top. The second conductive branch 112, the second conductive branch 122, the second conductive branch 132, and the second conductive branch 142 overlap in the vertical direction Z and are separated from each other.

[0069] The size of the first conductive branch 111 and the second conductive branch 112 in the second horizontal direction D2 can be greater than the size of the first conductive branch 121 and the second conductive branch 122 in the second horizontal direction D2. The size relationship between other conductive branches can be similarly derived.

[0070] The size (i.e., height) of the second conductive pillar 312 and the first conductive pillar 311 coupled to the conductive layer 110 in the vertical direction Z is greater than the size of the first conductive pillar 321 and the second conductive pillar 322 coupled to the conductive layer 120 in the vertical direction Z. The size relationship between other conductive pillars can be similarly derived.

[0071] The coil inductance includes the conductive layer 110, the conductive layer 120, the conductive layer 130, the conductive layer 140, the conductive element 212, the conductive element 223, and the conductive element 234. The conductive layer 110, the conductive layer 120, the conductive layer 130, and the conductive layer 140 overlap in the vertical direction Z, so the coil inductance can occupy a small layout area. The coil inductance can induce a magnetic field in the vertical direction Z. In embodiments, the coil inductance is not limited to the four-coil structure as shown in FIG. 1. The coil inductance can have other numbers of coils formed by other numbers of conductive layers 100 and conductive elements 200, such as a five-coil structure, a six-coil structure, or a structure with more numbers of coils. The coil inductance can also be referred to as a three-dimensional inductance. Figure 2

[0072] Figures 3-11C A method of manufacturing an inductance structure in an embodiment is illustrated.

[0073] Referring to FIG. 7, a substrate 750 is provided. The substrate 750 can include an oxide such as silicon oxide, or other suitable dielectric material. The substrate 750 can be patterned to define a recess 752. The patterning step can be performed using a reactive-ion etching (RIE) method or other suitable etching method. Figure 3 Referring to FIG. 8, a conductive layer 810 is formed on the substrate 750. The conductive layer 810 can be formed by depositing a conductive material such as copper, aluminum, or other suitable conductive material on the substrate 750. The conductive layer 810 can be formed by a physical vapor deposition (PVD) method such as sputtering, or other suitable deposition method.

[0074] Figure 4 ​​The interleaved stack of insulating layers 754 and material layers 756 can be formed in the recess 752 and on the upper surface of the substrate 750 to form a stack structure 758. The material layers 756 are separated from each other by the insulating layers 754. A dielectric element 760 is formed on the stack structure 758. The material layers 756 are of a different material than the insulating layers 754 and the dielectric element 760. The insulating layers 754 can comprise an oxide such as silicon oxide, or other suitable dielectric material. The material layers 756 can comprise a nitride such as silicon nitride, or other suitable dielectric material. The dielectric element 760 can comprise an oxide such as silicon oxide, or other suitable dielectric material. Portions of the stack structure 758 and the dielectric element 760 on the upper surface of the substrate 750 can be removed using chemical mechanical polishing or other etching methods to result in a semiconductor structure as shown in Figure 5A and Figure 5B .

[0075] Referring to Figure 5A and Figure 5B . Figure 5A is a top view of a semiconductor structure. Figure 5B is a cross-sectional view of the semiconductor structure of Figure 5A along the line BB'. The insulating layers 754 and the material layers 756 have a cup shape. The cup-shaped structure 762 can comprise a first wall portion 7621, a second wall portion 7622, a third wall portion 7623, a fourth wall portion 7624, and a bottom portion 7625. The first wall portion 7621 is opposite the second wall portion 7622. The third wall portion 7623 is opposite the fourth wall portion 7624. The third wall portion 7623 and the fourth wall portion 7624 are between the first wall portion 7621 and the second wall portion 7622. The first wall portion 7621, the second wall portion 7622, the third wall portion 7623, the fourth wall portion 7624, and the bottom portion 7625 each comprise the stack structure 758. A patterning step can be performed on the semiconductor structure to remove the third wall portion 7623 and portions of the substrate 750, and also to remove the first wall portion 7621, the second wall portion 7622, the bottom portion 7625, and portions of the dielectric element 760 adjacent the third wall portion 7623, to result in a semiconductor structure as shown in Figure 6A and Figure 6B . Figure 6A is a top view of a semiconductor structure. Figure 6B is a cross-sectional view of the semiconductor structure of Figure 6A along the line BB'. The patterning step can be performed using a reactive ion etching method or other suitable etching method.

[0076] Referring to Figure 7A and Figure 7B . Figure 7Ais a top view of a semiconductor structure. Figure 7B is a cross-sectional view of the semiconductor structure of Figure 7A FIG. 8 along the line BB'. An insulation element 766 is formed in the first trench 764. The insulation element 766 can comprise an oxide such as silicon oxide, or other suitable dielectric material. A chemical mechanical polishing step can be performed to planarize the semiconductor structure. A patterning step can be performed on the semiconductor structure to remove the fourth wall portion 7624 and portions of the substrate 750, as well as the first wall portion 7621, the second wall portion 7622, the bottom portion 7625, and portions of the dielectric element 760 adjacent to the fourth wall portion 7624, thereby forming a semiconductor structure having a second trench 768 as shown in Figures 8A-8C FIG. 9. The patterning step can be performed using a reactive ion etching process or other suitable etching method.

[0077] See Figures 8A-8C . Figure 8A is a top view of a semiconductor structure. Figure 8B is a cross-sectional view of the semiconductor structure of Figure 8A FIG. 10 along the line BB'. Figure 8C is a cross-sectional view of the semiconductor structure of Figure 8A FIG. 11 along the line CC'. The insulation layer 754 and the material layer 756 of the stack structure 758 have a U-shape. The material layer 756 can be removed using a selective etching method, thereby forming a slit 770 defined between the substrate 750, the insulation layer 754, and the dielectric element 760 as shown in Figures 9A-9C FIG. 12. Figure 9A is a top view of a semiconductor structure. Figure 9B is a cross-sectional view of the semiconductor structure of Figure 9A FIG. 13 along the line BB'. Figure 9C is a cross-sectional view of the semiconductor structure of Figure 9A FIG. 14 along the line CC'.

[0078] See Figures 10A-10C . Figure 10A is a top view of a semiconductor structure. Figure 10B is a cross-sectional view of the semiconductor structure of Figure 10A FIG. 15 along the line BB'. Figure 10C is a cross-sectional view of the semiconductor structure of Figure 10AA cross-sectional view of the semiconductor structure along line CC′ is shown. A conductive layer 100 may be formed on the surface of the semiconductor structure. The conductive layer 100 may include a tantalum nitride (TaN) thin film used as a barrier layer and a copper (Cu) thin film formed on the tantalum nitride thin film. The copper thin film may include a copper seed film. However, the invention is not limited thereto. The conductive layer 100 may include other metals or conductive materials formed by deposition or electroplating processes. The conductive layer 100 may be etched back to retain the conductive layer 100 in the slit 770. The stacked structure 772 includes staggered conductive layers 100 and insulating layers 754. The conductive layers 100 are separated from each other by the insulating layers 754. The insulating layers 754 and conductive layers 100 of the stacked structure 772 have a U-shape. The stacked structure 772 includes a first stack branch 7721, a second stack branch 7722, and a stack trunk 7723. The first stacked branch 7721 (or stacked wall portion) includes a first insulating branch 7541 (or insulating wall portion) of the insulating layer 754 and a first conductive branch 101 (or conductive wall portion) of the conductive layer 100. The second stacked branch 7722 includes a second insulating branch 7542 of the insulating layer 754 and a second conductive branch 102 of the conductive layer 100. The stacked core 7723 (or stacked bottom portion) includes an insulating core 7543 (or insulating bottom portion) of the insulating layer 754 and a conductive core 103 (or conductive bottom portion) of the conductive layer 100. The insulating core 7543 and the conductive core 103 overlap in the vertical direction Z. The first insulating branch 7541, the second insulating branch 7542, the first conductive branch 101, and the second conductive branch 102 overlap in the first horizontal direction D1.

[0079] Please refer to Figures 11A-11C . Figure 11A This is a top view of the inductor structure. Figure 11B for Figure 11A A cross-sectional view of the inductor structure along line BB′. Figure 11C for Figure 11A A cross-sectional view of the inductor structure along line CC′. A dielectric film 774 is formed on the substrate 750, the stacked structure 772, and the dielectric element 760. In one embodiment, the dielectric film 774 may serve as a barrier layer to prevent the diffusion of copper contaminants from the conductive layer 100. A dielectric film 776 is formed on the dielectric film 774. Conductive pillars 300 are formed through the dielectric films 776 and 774 and coupled to the conductive layer 100. Conductive lines 400 are formed on the dielectric film 776 and coupled to the conductive pillars 300. The inductor structure includes, as shown below. Figure 1 The coil inductance is shown. In this embodiment, the coil inductance can be used to reduce the effect of the magnetic field on active components (e.g., CMOS) formed beneath the substrate 750.

[0080] Figures 12-17B A method for manufacturing an inductor structure in another embodiment is illustrated.

[0081] Please refer toFigure 12 The interleaved stack of insulating layers 754 and material layers 756 are formed on the upper surface of the substrate 750 to form a stack structure 758. The material layers 756 are separated from each other by the insulating layers 754.

[0082] Referring to Figure 13A and Figure 13B . Figure 13A is a top view of a semiconductor structure. Figure 13B is a cross-sectional view of the semiconductor structure of Figure 13A along the line BB'. The stack structure 758 is subjected to a patterning step to form a stepped structure 600. A dielectric film 774 is formed on the stack structure 758 and the stepped structure 600. The dielectric film 774 can comprise an oxide such as silicon oxide, or other suitable dielectric material. Insulating pillars 778 are formed through the stack structure 758, the stepped structure 600, and the dielectric film 774. The insulating pillars 778 can comprise an oxide such as silicon oxide, or other suitable dielectric material. The patterning step is performed to result in the semiconductor structure as shown in Figures 14A-14C .

[0083] Referring to Figures 14A-14C . Figure 14A is a top view of a semiconductor structure. Figure 14B is a cross-sectional view of the semiconductor structure of Figure 14A along the line BB'. Figure 14C is a cross-sectional view of the semiconductor structure of Figure 14A along the line CC'. The U-shaped structure 780 comprises the stack structure 758, the first stepped structure 611, the second stepped structure 612, and the dielectric film 774. The material layers 756 can be removed using a selective etching approach to form a slit 770 defined between the substrate 750, the insulating layers 754, and the dielectric film 774 as shown in Figures 15A-15C . In one embodiment, the material layers 756 comprise silicon nitride, which can be removed using a phosphoric acid (H3PO4) solution. The present application is not limited to this. The material layers 756 can be removed using other selective etching approaches, such as dry etching methods.

[0084] Referring to Figures 15A-15C . Figure 15A is a top view of a semiconductor structure. Figure 15B is a cross-sectional view of the semiconductor structure of Figure 15A along the line BB'. Figure 15C is a cross-sectional view of the semiconductor structure of Figure 15A along the line CC'. The slit 770 exposes the sidewall surfaces of the insulating pillars 778.

[0085] Referring to Figures 16A-16C . Figure 16A is a top view of a semiconductor structure. Figure 16B is a cross-sectional view of the semiconductor structure of Figure 16A along the line BB'.Figure 16C for Figure 16A A cross-sectional view of the semiconductor structure along line CC′. A conductive layer 100 is formed on the surface of the semiconductor structure. The conductive layer 100 can be etched back to remain in the slit 770. The stacked structure 772, the first step structure 601, and the second step structure 602 include staggered conductive layers 100 and insulating layers 754. The conductive layers 100 are separated from each other by the insulating layers 754.

[0086] The laminated branch 7723 is located between the first laminated branch 7721 and the second laminated branch 7722. The laminated branch 7723 may extend in a first horizontal direction D1. The first laminated branch 7721 and the second laminated branch 7722 may extend in a second horizontal direction D2. The laminated branch 7723 includes an insulating branch 7543 of the insulating layer 754 of the laminated structure 772 and a conductive branch 103 of the conductive layer 100. The insulating branch 7543 and the conductive branch 103 overlap in the vertical direction Z. The second laminated branch 7722 includes a second stepped structure 602, a second insulating branch 7542 of the insulating layer 754 of the laminated structure 772, and a second conductive branch 102 of the conductive layer 100. The second insulating branch 7542 and the second conductive branch 102 overlap in the vertical direction Z. The structure of the first stacked branch 7721 can be analogous, for example including a first stepped structure 601 and a stacked structure 772, with the first insulating branch of the insulating layer 754 overlapping the first conductive branch of the conductive layer 100 in the vertical direction Z. A barrier layer 782 can be formed on the sidewall surface of the conductive layer 100. The barrier layer 782 may include cobalt (Co), tantalum nitride (TaN), titanium nitride (TiN), or other suitable materials. An insulating pillar 778 passes through the U-shaped structure 780. A dielectric film 776 can be formed on the U-shaped structure 780 and the insulating pillar 778.

[0087] Please refer to Figure 17A and Figure 17B . Figure 17A This is a top view of the inductor structure. Figure 17B for Figure 17A A cross-sectional view of the inductor structure along line BB′. Conductive pillars 300 are formed passing through dielectric films 776 and 774 and coupled to the conductive layer 100. Conductive lines 400 are formed on the dielectric film 776 and coupled to the conductive pillars 300. The inductor structure includes... Figure 2 The coil inductance is shown.

[0088] The embodiments of the present invention have now been described in detail with reference to the accompanying drawings.

[0089] The above-described specific embodiments further illustrate the purpose, technical solutions and beneficial effects of the present application, and it should be understood that the above-described specific embodiments are merely examples of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An inductive structure, wherein, comprising: a plurality of electrically conductive layers, overlapping in a vertical direction; a plurality of electrically conductive elements, each coupled between two of the electrically conductive layers, wherein each of the electrically conductive elements comprises: a first electrically conductive pillar, coupled to an upper electrically conductive surface of one of the two electrically conductive layers; a second electrically conductive pillar, coupled to an upper electrically conductive surface of the other of the two electrically conductive layers; and an electrically conductive wire, coupled between the first electrically conductive pillar and the second electrically conductive pillar; the upper electrically conductive surfaces of the electrically conductive layers are flush with each other, and the first electrically conductive pillars and the second electrically conductive pillars have the same height.

2. The inductive structure of claim 1, wherein, each of the electrically conductive layers comprises: a first electrically conductive branch; a second electrically conductive branch; and an electrically conductive stem, coupled between the first electrically conductive branch and the second electrically conductive branch.

3. The inductive structure of claim 2, wherein, one of the electrically conductive elements is coupled between the first electrically conductive branch of one of the two electrically conductive layers and the second electrically conductive branch of the other of the two electrically conductive layers.

4. The inductive structure of claim 2, wherein: the first electrically conductive branches and the second electrically conductive branches overlap each other in a horizontal direction; the electrically conductive stems overlap each other in the vertical direction.

5. The inductive structure of claim 2, wherein: the first electrically conductive branches overlap each other in the vertical direction; the second electrically conductive branches overlap each other in the vertical direction; the electrically conductive stems overlap each other in the vertical direction.

6. The inductive structure of claim 5, wherein, comprising: a first staircase structure comprising the first electrically conductive branches; and a second staircase structure comprising the second electrically conductive branches. further comprising a plurality of insulating layers, wherein the electrically conductive layers are separated from each other by the insulating layers, the electrically conductive layers and the insulating layers having a U-shape.

7. The inductive structure of claim 1, wherein, comprising a coil inductance, wherein the coil inductance comprises the electrically conductive layers and the electrically conductive elements.

8. The inductive structure of claim 1, wherein, comprising:

9. A method of manufacturing an inductive structure, wherein, forming a plurality of electrically conductive layers, wherein the electrically conductive layers overlap in a vertical direction; and forming a plurality of electrically conductive elements on the electrically conductive layers, wherein each of the electrically conductive elements is coupled between two of the electrically conductive layers, wherein each of the electrically conductive elements comprises: a first electrically conductive pillar, coupled to an upper electrically conductive surface of one of the two electrically conductive layers; a second electrically conductive pillar, coupled to an upper electrically conductive surface of the other of the two electrically conductive layers; and an electrically conductive wire, coupled between the first electrically conductive pillar and the second electrically conductive pillar; the upper electrically conductive surfaces of the electrically conductive layers are flush with each other, and the first electrically conductive pillars and the second electrically conductive pillars have the same height. ​

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