Light emitting diode, light emitting device and method of manufacturing the same

By etching trenches in flip-chip LEDs and setting a barrier layer on the island structure, the chip stability problem caused by the difference in electrode height in flip-chip LED packaging is solved, achieving higher die bonding stability and reliability, and improving the photoelectric performance of light-emitting diodes.

CN115224173BActive Publication Date: 2026-06-09TIANJIN SANAN OPTOELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TIANJIN SANAN OPTOELECTRONICS
Filing Date
2022-07-28
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

In the flip-chip LED packaging process, the significant difference in the height of the PN electrodes of the chip can lead to problems such as chip skewing, desoldering, and crystal cracking during die bonding, making it difficult to guarantee the stability and reliability of the chip during packaging.

Method used

In the light-emitting diode, etched trenches divide the first semiconductor layer and the active light-emitting layer into independent light-emitting area structures and island structures. A barrier layer is set on the island structure, and the island structure mesa and sidewalls are covered with the barrier layer. The metal electrodes are set on the same horizontal plane to reduce the height difference, enhance adhesion, and avoid damage to the island structure during high-temperature connection.

Benefits of technology

By reducing the height difference of the metal electrodes, the stability of the die bonding process is improved, chip skew and desoldering are reduced, and the overall reliability and photoelectric performance of the light-emitting diode are enhanced.

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Abstract

The present application relates to the technical field of semiconductor manufacturing, and particularly relates to a light emitting diode, a light emitting device and a manufacturing method thereof. The light emitting diode at least comprises a substrate, an epitaxial stack, a first metal electrode and a second metal electrode. The epitaxial stack comprises a second semiconductor layer, an active light emitting layer and a first semiconductor layer which are sequentially stacked on the substrate. The epitaxial stack further has a groove which penetrates the first semiconductor layer to the active light emitting layer. The groove divides the first semiconductor layer and the active light emitting layer into a light emitting area structure and an island structure which are independent of each other. The island structure mesa and the sidewall are covered with a barrier layer. The first metal electrode is formed on the light emitting area structure and is electrically connected to the first semiconductor layer. The second metal electrode is formed on the barrier layer and is electrically connected to the second semiconductor layer. The light emitting diode provided by the present application reduces the height difference between the two metal electrodes through the design of the island structure and the barrier layer, ensures that the light emitting diode is easy to die bonding, and can effectively improve the yield.
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