PhuMob model correction method, device, TCAD simulation method and system, medium and equipment

Abstract

The present application provides a PhuMob model correction method, apparatus, TCAD simulation method system, medium, and equipment, which can address the problem in related art that conventional TCAD software simulation results of components under extremely low temperature conditions may not match actual conditions, thereby improving simulation accuracy. The method includes: obtaining the internal impurity scattering target mobility of the device at extremely low temperatures; modifying the first temperature power parameter in the internal impurity scattering mobility formula of the PhuMob model in the TCAD software; obtaining measured current data of the device at extremely low temperatures; modifying the second temperature power parameter in the lattice scattering mobility formula of the PhuMob model in the TCAD software; and obtaining a corrected PhuMob model based on the modified first and second temperature power parameters.

Description

Technical Field

[0001] The present application relates to the field of chip simulation technology, and in particular to a PhuMob model correction method, device, TCAD simulation system, medium and equipment. Background Art

[0002] The main function of TCAD (Technology Computer Aided Design) software is that it contains numerous physical models of semiconductor processes and solves physical and partial differential equations, such as the diffusion and transport equations of discrete geometric bodies. Through these models, the semiconductor process is simulated to realize the function of computer-aided design, thereby helping engineers design circuit components.

[0003] Traditional TCAD software typically only simulates low-temperature devices up to around 55K. However, new devices like quantum chips are typically used at temperatures of 4K or even 100K. For example, mobility models below 55K can produce abnormal, unphysical mobility values ​​that don't match experimental low-temperature mobility data.

[0004] Therefore, the results of component simulation using traditional TCAD software under extremely low temperature conditions will not be consistent with the actual situation. Summary of the Invention

[0005] The purpose of this application is to provide a PhuMob model correction method, device, TCAD simulation method and system, medium and equipment to solve the problem in the prior art that the results of component simulation performed by traditional TCAD software under extremely low temperature conditions will not be consistent with the actual situation.

[0006] To solve the above technical problems, in the first aspect, the present application provides a PhuMob model correction method.

[0007] Obtain the device's internal impurity scattering target mobility at extremely low temperatures;

[0008] Modifying the first temperature power parameter in the in-vivo impurity scattering mobility formula of the PhuMob model in the TCAD software so that the in-vivo impurity scattering mobility increases as the temperature decreases after the modification of the first temperature power parameter and is consistent with the in-vivo impurity scattering target mobility;

[0009] Obtain the measured current data of the device at extremely low temperatures;

[0010] Modifying the second temperature power parameter in the lattice scattering mobility formula of the PhuMob model in the TCAD software so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified;

[0011] A modified PhuMob model is obtained according to the modified first temperature power parameter and the modified second temperature power parameter.

[0012] Optionally, the expression for the in vivo impurity scattering mobility is:

[0013]

[0014] Among them, the parameters in the formula are:

[0015]

[0016] The expression of the lattice scattering mobility is:

[0017]

[0018] Among them, μ i,max Characterizes the maximum mobility of electrons, μ min represents the maximum mobility of holes, n represents the electron concentration, p represents the hole concentration, T represents the temperature, α i Characterize the first temperature power parameter, θ i Characterize the second temperature power parameter, N i,sc Characterizes the impurity-carrier scattering concentration, N i,sc,eff Characterizes the effective impurity-carrier scattering concentration, N i,ref Characterizing concentration parameters; modified first temperature power parameter α i Less than 0.5.

[0019] Optionally, modifying the first temperature power parameter in the in vivo impurity scattering mobility formula of the PhuMob model in the TCAD software includes:

[0020] Reduce the first temperature power parameter α based on the default parameter value i ;

[0021] Based on the modified first temperature power parameter α i , obtain the modified in-body impurity scattering mobility;

[0022] determining whether a difference between the modified internal impurity scattering mobility and the internal impurity scattering target mobility is less than a first threshold;

[0023] If yes, the internal impurity scattering mobility is consistent with the internal impurity scattering target mobility after modifying the first temperature power parameter; if no, return to modify the first temperature power parameter α i steps.

[0024] Optionally, modifying the second temperature power parameter in the lattice scattering mobility formula of the PhuMob model in the TCAD software includes:

[0025] The internal impurity scattering mobility is modified by the first temperature power parameter α i After the target mobility of the internal impurity scattering is consistent, the second temperature power parameter θ is modified. i ;

[0026] Based on the modified second temperature power parameter θ i , obtain the modified lattice scattering mobility;

[0027] determining whether the modified lattice scattering mobility matches the measured current data;

[0028] If not, return to modify the second temperature power parameter θ i steps until the modified lattice scattering mobility matches the measured current data.

[0029] Optionally, determining whether the modified lattice scattering mobility matches the measured current data includes:

[0030] Modify the first temperature power parameter α according to i The internal impurity scattering mobility and the modified second temperature power parameter θ i The lattice scattering mobility after the scattering is obtained to obtain the bulk mobility of the device;

[0031] Determining whether a difference between the simulated current data characterized by the bulk mobility and the measured current data is less than a second threshold;

[0032] If yes, the modified lattice scattering mobility matches the measured current data; if no, the modified lattice scattering mobility does not match the measured current data.

[0033] A second aspect provides a TCAD simulation method, comprising:

[0034] receiving a simulation instruction; wherein the simulation instruction includes a simulation temperature and a simulation request for bulk mobility at the simulation temperature;

[0035] Determining whether the simulation temperature is within a preset extremely low temperature range;

[0036] If yes, the PhuMob model correction method according to any one of the above-mentioned first aspects is called to obtain a corrected PhuMob model to simulate the body mobility.

[0037] In a third aspect, a TCAD simulation system is provided, comprising a PhuMob model obtained by the PhuMob model correction method according to any one of the first aspects.

[0038] In a fourth aspect, a PhuMob model correction device is provided. The device comprises:

[0039] The first acquisition module is used to obtain the internal impurity scattering target mobility of the device at an extremely low temperature;

[0040] A first modification module is used to modify a first temperature power parameter in a PhuMob model body impurity scattering mobility formula in the TCAD software, so that the body impurity scattering mobility increases as the temperature decreases after the first temperature power parameter is modified and is consistent with the body impurity scattering target mobility;

[0041] The second acquisition module is used to obtain the measured current data of the device at an extremely low temperature;

[0042] A second modification module is used to modify a second temperature power parameter in a lattice scattering mobility formula of the PhuMob model in the TCAD software so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified;

[0043] The third acquisition module is used to acquire the modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.

[0044] In a fifth aspect, an electronic device is provided, comprising a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute any one of the methods described in the first aspect.

[0045] In a sixth aspect, a storage medium is provided, wherein the storage medium stores a computer program, wherein the computer program is configured to execute the method described in any one of the first aspects above when running.

[0046] Based on the above-mentioned PhuMob model correction method, by modifying the first temperature power parameter of the in-body impurity scattering mobility and the second temperature power parameter of the lattice scattering mobility, the data of the PhuMob model in the TCAD software is matched with the experimental data value of the mobility at low temperatures. This solves the problem that the results of component simulation under extremely low temperature conditions performed by traditional TCAD software will not match the actual situation, thereby improving the accuracy of the simulation.

[0047] The PhuMob model correction device, TCAD simulation method and system, storage medium and electronic device provided in this application belong to the same inventive concept as the PhuMob model correction method, and therefore have the same beneficial effects, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 This is a hardware structure block diagram of a computer terminal for a PhuMob model correction method provided by an exemplary embodiment of the present application;

[0049] Figure 2 is a flow chart of a PhuMob model correction method provided by an exemplary embodiment of the present application;

[0050] Figure 3 A flowchart of a TCAD simulation method provided by an exemplary embodiment of the present application;

[0051] Figure 4 A schematic block diagram of a PhuMob model correction device provided as an exemplary embodiment of the present application. DETAILED DESCRIPTION

[0052] The following describes a specific embodiment of the present invention in more detail with reference to schematic diagrams. The advantages and features of the present invention will become more apparent from the following description and claims. It should be noted that the drawings are greatly simplified and not to exact scale, and are intended solely to facilitate and clearly illustrate the embodiments of the present invention.

[0053] In the description of the present invention, it should be understood that the terms "center", "up", "down", "left", "right", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0054] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0055] The embodiment of the present application first provides a PhuMob model correction method, which can be applied to electronic devices, such as computer terminals, specifically ordinary computers, quantum computers, etc.

[0056] The following describes it in detail by taking running on a computer terminal as an example. Figure 1 The hardware structure block diagram of a computer terminal for a PhuMob model correction method provided in an embodiment of the present application. Figure 1 As shown, the computer terminal 10 may include one or more ( Figure 1Only one is shown) a processor 102 (the processor 102 may include but is not limited to a microprocessor MCU or a programmable logic device FPGA and other processing devices) and a memory 104 for storing data. Optionally, the computer terminal may also include a transmission device 106 for communication functions and an input and output device 108. It will be understood by those skilled in the art that Figure 1 The structure shown is only for illustration and does not limit the structure of the above-mentioned computer terminal. For example, the computer terminal 10 may also include Figure 1 More or fewer components than shown, or with Figure 1 Different configurations shown.

[0057] Memory 104 can be used to store software programs and modules of application software, such as the program instructions / modules corresponding to the PhuMob model correction method in the embodiments of the present application. Processor 102 executes various functional applications and data processing by running the software programs and modules stored in memory 104, thereby implementing the above-mentioned method. Memory 104 may include high-speed random access memory and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, memory 104 may further include memory remotely located relative to processor 102, and these remote memories may be connected to computer terminal 10 via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0058] The transmission device 106 is configured to receive or transmit data via a network. A specific example of the aforementioned network may include a wireless network provided by the communications provider of the computer terminal 10. In one embodiment, the transmission device 106 includes a network interface controller (NIC), which can be connected to other network devices via a base station to enable communication with the Internet. In another embodiment, the transmission device 106 may be a radio frequency (RF) module, which is configured to communicate with the Internet wirelessly.

[0059] The following further describes a PhuMob model correction method provided by an embodiment of the present invention.

[0060] See also Figure 3 , Figure 3 : This is a flow chart of a PhuMob model correction method provided by an exemplary embodiment of the present application, including steps S210 to S250, wherein:

[0061] S210, obtaining the internal impurity scattering target mobility of the device at an extremely low temperature.

[0062] The device is a chip-based device, such as a single-electron transistor. The PhuMob model correction method of this application is applicable to temperatures within the ultra-low temperature range. The in-body impurity scattering target mobility of the device at ultra-low temperatures can be obtained through actual measurement or by consulting relevant literature and experimental data.

[0063] After obtaining the target mobility of the device's internal impurity scattering at ultra-low temperature, step S220 is performed.

[0064] S220, modifying the first temperature power parameter in the in vivo impurity scattering mobility formula of the PhuMob model in the TCAD software, so that the in vivo impurity scattering mobility increases as the temperature decreases after the first temperature power parameter is modified and is consistent with the in vivo impurity scattering target mobility.

[0065] The mobility described by the PhuMob model consists of two parts: the lattice scattering mobility μ i,L One-fifth of the total impurity scattering mobility μ i,DAeh . The bulk mobility of the device is equal to the lattice scattering mobility μ i,L One-fifth of the total impurity scattering mobility μ i,DAeh One-third, the bulk mobility can correspond to the current.

[0066] For the internal impurity scattering mobility μ i,DAeh , whose expression is:

[0067]

[0068] Among them, the parameters in the formula are:

[0069]

[0070] For the lattice scattering mobility μ i,L , whose expression is:

[0071]

[0072] Among them, μ i,max Characterizes the maximum mobility of electrons, μ min represents the maximum mobility of holes, n represents the electron concentration, p represents the hole concentration, T represents the temperature, α i Characterize the first temperature power parameter, θ i Characterize the second temperature power parameter, N i,sc Characterizes the impurity-carrier scattering concentration, N i,sc,eff Characterizes the effective impurity-carrier scattering concentration, N i,ref Characterize concentration parameters.

[0073] It is common knowledge that at very low temperatures, the mobility of the bulk Coulomb scattering increases as the temperature T decreases. The Coulomb scattering part is divided into two-dimensional and three-dimensional Coulomb scattering, of which the three-dimensional Coulomb scattering is the bulk impurity scattering part. In the traditional TCAD simulation system, at very low temperatures, the bulk impurity scattering mobility μ i,DAeh Since the first temperature power parameter α i The original value range of is greater than 0.5, which makes the exponent of the relevant parameter in the expression of the internal impurity scattering mobility rate positive, that is, it will cause the internal impurity scattering mobility μ i,DAeh It becomes smaller as the temperature T decreases.

[0074] Therefore, in order to obtain a reasonable value of the internal impurity scattering mobility, it is necessary to calculate the internal impurity scattering mobility μ in the PhuMob model. i,DAeh The first temperature power parameter α in i Make the modification, the modified first temperature power parameter α i Less than 0.5. This makes the exponent of the relevant parameter in the expression of the internal impurity scattering mobility negative, which will cause the internal impurity scattering mobility μ i,DAeh It increases as the temperature T decreases.

[0075] Specifically, step S220 may include the following steps:

[0076] S2201, reducing the first temperature power parameter α based on the default parameter value i .

[0077] Traditional TCAD simulation system, internal impurity scattering mobility μ in PhuMob model i,DAeh The first temperature power parameter α in i With default parameters and original value range. In common knowledge, the first temperature power parameter α i As a physical constant, its value has a reasonable standard range, that is, the original range.

[0078] Therefore, in the traditional TCAD simulation system, the PhuMob model, the internal impurity scattering mobility μ i,DAeh The first temperature power parameter α in i The default parameters are set, which are within the original value range. However, the first temperature power parameter α i In the original range of values, the exponent of the relevant parameters in the expression of the internal impurity scattering mobility is positive, which does not conform to the internal impurity scattering mobility μ at extremely low temperatures. i,DAeh It is common knowledge that the first temperature power parameter α increases with the decrease of temperature T. In other words, the modification principle is: the modified first temperature power parameter α i To be less than 0.5.

[0079] Each time the first temperature power parameter α is modified i Then, execute step S2202.

[0080] S2202, based on the modified first temperature power parameter α i , obtain the modified in-body impurity scattering mobility.

[0081] The modified first temperature power parameter α i Scattering mobility μ of impurities brought into the body i,DAeh The modified internal impurity scattering mobility is obtained by using the expression of , and then step S2203 is executed.

[0082] S2203 : Determine whether a difference between the modified internal impurity scattering mobility and the internal impurity scattering target mobility is less than a first threshold.

[0083] The first threshold is a numerical value set empirically and is not specifically limited herein. A difference calculation is performed between the modified internal impurity scattering mobility and the internal impurity scattering target mobility, and then a determination is made as to whether the difference is less than the first threshold. If so, the internal impurity scattering mobility is consistent with the internal impurity scattering target mobility after modifying the first temperature power parameter. If not, the process returns to step S2201.

[0084] S230, obtaining actual current data of the device at an extremely low temperature.

[0085] The current data of the device at a very low temperature can be obtained by actual measurement or by consulting relevant literature and experimental data. After obtaining the actual current data of the device at a very low temperature, step S240 is executed.

[0086] S240 , modifying a second temperature power parameter in a lattice scattering mobility formula of the PhuMob model in the TCAD software, so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified.

[0087] Specifically, step S240 may include the following steps:

[0088] S2401, the internal impurity scattering mobility is modified by the first temperature power parameter α i After the target mobility of the impurity scattering in the body is consistent, the second temperature power parameter α is modified i .

[0089] For the lattice scattering mobility μ i,L , whose expression is:

[0090]

[0091] Among them, μ i,maxCharacterizes the maximum mobility of electrons, θ i Characterizes the second temperature power parameter.

[0092] The internal impurity scattering mobility is modified by the first temperature power parameter α i After the target mobility of the impurity scattering in the body is consistent, the modified first temperature power parameter α i As the first temperature power parameter in the PhuMob model, the second temperature power parameter θ is then modified i .

[0093] S2402, based on the modified second temperature power parameter α i , to obtain the modified lattice scattering mobility.

[0094] S2403 , determining whether the modified lattice scattering mobility matches the measured current data.

[0095] Whether the modified lattice scattering mobility matches the measured current data is determined by the following steps:

[0096] S24031, modify the first temperature power parameter α i The internal impurity scattering mobility and the modified second temperature power parameter θ i The bulk mobility of the device is obtained by calculating the lattice scattering mobility.

[0097] The bulk mobility of the device is equal to the lattice scattering mobility μ i,L One-fifth of the total impurity scattering mobility μ i,DAeh The modified bulk mobility can be obtained, and then step S24032 is executed.

[0098] S24032: Determine whether the difference between the simulated current data characterized by the bulk mobility and the measured current data is less than a second threshold.

[0099] If the difference between the simulated current data characterized by the bulk mobility and the measured current data is less than the second threshold, the modified lattice scattering mobility matches the measured current data, and step S250 is executed.

[0100] If the difference between the simulated current data characterized by the bulk mobility and the measured current data is not less than the second threshold, the modified lattice scattering mobility does not match the measured current data, and the second temperature power parameter θ is modified. i Step S2401 is performed until the modified lattice scattering mobility matches the measured current data.

[0101] S250 : Obtain a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.

[0102] By replacing the first temperature power parameter and the second temperature power parameter in the PhuMob model with the modified first temperature power parameter and the modified second temperature power parameter, a modified PhuMob model suitable for extremely low temperatures can be obtained.

[0103] It should be noted that the first temperature power parameter and the second temperature power parameter in the PhuMob model are both physical constants. In common knowledge, the values ​​of these physical constants have a standard range, that is, in the TCAD simulation system, there is an original value range. Although the traditional TCAD simulation system gives the authority to modify the values ​​of these physical constants, these parameters are not fixed values, but have a reasonable standard value range. However, after these parameters are taken within the reasonable standard value range, the TCAD simulation system will show abnormal and non-physical mobility values ​​below 55K. Therefore, the inventors of the present application modified the parameters so that the modified parameter values ​​are not within the original value range, that is, breaking through common knowledge, and in engineering terms, making the mobility values ​​simulated by the modified PhuMob model match the measured current data.

[0104] Therefore, compared with the existing technology, Figure 2 The PhuMob model correction method shown here, by modifying the first temperature power parameter of the bulk impurity scattering mobility and the second temperature power parameter of the lattice scattering mobility, makes the data of the PhuMob model in the TCAD software match the experimental data values ​​of the mobility at low temperatures. This solves the problem that the results of component simulation performed by traditional TCAD software under extremely low temperature conditions will not match the actual situation, thereby improving the accuracy of the simulation.

[0105] See also Figure 3 , Figure 3 This is a flow chart of a TCAD simulation method provided by an exemplary embodiment of the present application. Figure 3 As shown, based on the above-mentioned PhuMob model correction method, the present application also provides a TCAD simulation method including steps S310 to S330, wherein:

[0106] S310, receiving a simulation instruction.

[0107] The simulation instruction includes a simulation temperature and a simulation request of bulk mobility at the simulation temperature.

[0108] S320: Determine whether the simulation temperature is within a preset extremely low temperature range.

[0109] S330: If yes, call the above-mentioned PhuMob model correction method to obtain a corrected PhuMob model to simulate the body mobility.

[0110] If the simulation temperature is not within the preset extremely low temperature range, step S340 is executed: calling the PhuMob model before correction to simulate the bulk mobility.

[0111] An embodiment of the present application also provides a TCAD simulation system, including a PhuMob model obtained according to the above-mentioned PhuMob model correction method.

[0112] The TCAD simulation method and TCAD simulation system provided in this application belong to the same inventive concept as the PhuMob model correction method, and therefore have the same beneficial effects, which will not be described in detail here.

[0113] Combination of the above Figure 2 The PhuMob model correction method provided in the embodiment of the present application is described in detail. Figure 4 The apparatus for executing the PhuMob model correction method provided in the embodiments of the present application is described in detail.

[0114] For example, see Figure 4 , Figure 4 A schematic block diagram of a PhuMob model correction device provided by an exemplary embodiment of the present application, and Figure 2 Corresponding to the process shown, the PhuMob model correction device 400 includes:

[0115] A first acquisition module 410 is used to obtain the internal impurity scattering target mobility of the device at a very low temperature;

[0116] A first modification module 420 is configured to modify a first temperature power parameter in a PhuMob model body impurity scattering mobility formula in the TCAD software, so that the body impurity scattering mobility increases with decreasing temperature after the modification of the first temperature power parameter and is consistent with the body impurity scattering target mobility;

[0117] The second acquisition module 430 is used to obtain the measured current data of the device at an extremely low temperature;

[0118] A second modification module 440 is configured to modify a second temperature power parameter in a lattice scattering mobility equation of the PhuMob model in the TCAD software, so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified;

[0119] The third acquisition module 450 is configured to acquire a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.

[0120] An embodiment of the present application further provides a storage medium, wherein the storage medium stores a computer program, wherein the computer program is configured to execute the steps of any of the above method embodiments when run.

[0121] Specifically, in this embodiment, the above-mentioned storage medium may be configured to store a computer program for performing the following steps:

[0122] S210, obtaining the internal impurity scattering target mobility of the device at an extremely low temperature;

[0123] S220, modifying a first temperature power parameter in a PhuMob model body impurity scattering mobility formula in the TCAD software so that the body impurity scattering mobility increases as the temperature decreases after the first temperature power parameter is modified and is consistent with the body impurity scattering target mobility;

[0124] S230, obtaining actual current data of the device at an extremely low temperature;

[0125] S240, modifying a second temperature power parameter in a lattice scattering mobility formula of the PhuMob model in the TCAD software so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified;

[0126] S250 : Obtain a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.

[0127] Specifically, in this embodiment, the above-mentioned storage medium may include but is not limited to: a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk, and other media that can store computer programs.

[0128] An embodiment of the present application further provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to perform the steps in any one of the above method embodiments.

[0129] Specifically, the electronic device may further include a transmission device and an input / output device, wherein the transmission device is connected to the processor, and the input / output device is connected to the processor.

[0130] Specifically, in this embodiment, the processor may be configured to execute the following steps through a computer program:

[0131] S210, obtaining the internal impurity scattering target mobility of the device at an extremely low temperature;

[0132] S220, modifying a first temperature power parameter in a PhuMob model body impurity scattering mobility formula in the TCAD software so that the body impurity scattering mobility increases as the temperature decreases after the first temperature power parameter is modified and is consistent with the body impurity scattering target mobility;

[0133] S230, obtaining actual current data of the device at an extremely low temperature;

[0134] S240, modifying a second temperature power parameter in a lattice scattering mobility formula of the PhuMob model in the TCAD software so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified;

[0135] S250 : Obtain a modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.

[0136] Optionally, there may be one or more processors in the electronic device. The processor may be implemented in hardware or software. When implemented in hardware, the processor may be a logic circuit, an integrated circuit, etc. When implemented in software, the processor may be a general-purpose processor implemented by reading software code stored in a memory.

[0137] Optionally, the electronic device may include one or more memories. The memory may be integrated with the processor or may be provided separately from the processor, which is not limited in this application. For example, the memory may be a non-transient processor, such as a read-only memory (ROM), which may be integrated with the processor on the same chip or provided on different chips. This application does not specifically limit the type of memory or the configuration of the memory and the processor.

[0138] Exemplarily, the electronic device may be a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), a system on chip (SoC), a central processor unit (CPU), a network processor (NP), a digital signal processor (DSP), a microcontroller unit (MCU), a programmable logic device (PLD) or other integrated chips.

[0139] It should be understood that the processor in the embodiments of the present application may be a central processing unit (CPU), and the processor may also be other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or any conventional processor, etc.

[0140] It should also be understood that the memory in the embodiments of the present application may be a volatile memory or a non-volatile memory, or may include both volatile and non-volatile memories. Among them, the non-volatile memory may be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory may be a random access memory (RAM), which is used as an external cache. By way of example and not limitation, many forms of random access memory (RAM) are available, such as static RAM (SRAM), dynamic random access memory (DRAM), synchronous DRAM (SDRAM), double data rate synchronous dynamic random access memory (DDR SDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link DRAM (SLDRAM), and direct rambus RAM (DR RAM).

[0141] The PhuMob model correction device, storage medium, and electronic device provided in this application belong to the same inventive concept as the PhuMob model correction method, and therefore have the same beneficial effects, which will not be described in detail here.

[0142] The above embodiments can be implemented in whole or in part by software, hardware (such as circuits), firmware or any other combination. When implemented using software, the above embodiments can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer program are loaded or executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website, computer, server or data center to another website, computer, server or data center via a wired (such as infrared, wireless, microwave, etc.) method. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that contains one or more available media sets. The available medium can be a magnetic medium (for example, a floppy disk, a hard disk, a tape), an optical medium (for example, a DVD), or a semiconductor medium. The semiconductor medium can be a solid-state drive.

[0143] It should be understood that the term "and / or" as used herein simply describes a relationship between associated objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A alone, A and B together, or B alone. A and B can be singular or plural. Furthermore, the character " / " as used herein generally indicates an "or" relationship between the associated objects, but it may also indicate an "and / or" relationship. For specific understanding, please refer to the context.

[0144] In this application, "at least one" means one or more, and "plurality" means two or more. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can mean: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or plural.

[0145] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0146] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0147] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0148] In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0149] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0150] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0151] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0152] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A PhuMob model correction method, characterized in that: The method comprises: Obtain the device's internal impurity scattering target mobility at extremely low temperatures; Modifying the first temperature power parameter in the in-vivo impurity scattering mobility formula of the PhuMob model in the TCAD software so that the in-vivo impurity scattering mobility increases as the temperature decreases after the modification of the first temperature power parameter and is consistent with the in-vivo impurity scattering target mobility; Obtain the measured current data of the device at extremely low temperatures; Modifying the second temperature power parameter in the lattice scattering mobility formula of the PhuMob model in the TCAD software so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified; A modified PhuMob model is obtained according to the modified first temperature power parameter and the modified second temperature power parameter.

2. The method according to claim 1, characterized in that The expression of the in vivo impurity scattering mobility is: Among them, the parameters in the formula are: The expression of the lattice scattering mobility is: Among them, μ i,max Characterizes the maximum mobility of electrons, μ min represents the maximum mobility of holes, n represents the electron concentration, p represents the hole concentration, T represents the temperature, α i Characterize the first temperature power parameter, θ i Characterize the second temperature power parameter, N i,sc Characterizes the impurity-carrier scattering concentration, N i,sc,eff Characterizes the effective impurity-carrier scattering concentration, N i,ref Characterizing concentration parameters; modified first temperature power parameter α i Less than 0.

5.

3. The method according to claim 2, characterized in that The step of modifying the first temperature power parameter in the internal impurity scattering mobility formula of the PhuMob model in the TCAD software includes: Reduce the first temperature power parameter α based on the default parameter value i ; Based on the modified first temperature power parameter α i , obtain the modified in-body impurity scattering mobility; determining whether a difference between the modified internal impurity scattering mobility and the internal impurity scattering target mobility is less than a first threshold; If yes, the internal impurity scattering mobility is consistent with the internal impurity scattering target mobility after modifying the first temperature power parameter; if no, return to modify the first temperature power parameter α i steps.

4. The method according to claim 3, characterized in that The step of modifying the second temperature power parameter in the lattice scattering mobility formula of the PhuMob model in the TCAD software includes: The internal impurity scattering mobility is modified by the first temperature power parameter α i After the target mobility of the internal impurity scattering is consistent, the second temperature power parameter θ is modified. i ; Based on the modified second temperature power parameter θ i , obtain the modified lattice scattering mobility; determining whether the modified lattice scattering mobility matches the measured current data; If not, return to modify the second temperature power parameter θ i steps until the modified lattice scattering mobility matches the measured current data.

5. The method according to claim 4, characterized in that The determining whether the modified lattice scattering mobility matches the measured current data includes: Modify the first temperature power parameter α according to i The internal impurity scattering mobility and the modified second temperature power parameter θ i The lattice scattering mobility after the scattering is obtained to obtain the bulk mobility of the device; Determining whether a difference between the simulated current data characterized by the bulk mobility and the measured current data is less than a second threshold; If yes, the modified lattice scattering mobility matches the measured current data; if no, the modified lattice scattering mobility does not match the measured current data.

6. A TCAD simulation method, characterized in that: include: receiving a simulation instruction; wherein the simulation instruction includes a simulation temperature and a simulation request for bulk mobility at the simulation temperature; Determining whether the simulation temperature is within a preset extremely low temperature range; If yes, the PhuMob model correction method according to any one of claims 1 to 5 is called to obtain a corrected PhuMob model to simulate the bulk mobility.

7. A TCAD simulation system, characterized in that: The method comprises the PhuMob model obtained by the PhuMob model correction method according to any one of claims 1 to 5.

8. A PhuMob model correction device, characterized in that: The device comprises: The first acquisition module is used to obtain the internal impurity scattering target mobility of the device at an extremely low temperature; A first modification module is used to modify a first temperature power parameter in a PhuMob model body impurity scattering mobility formula in the TCAD software, so that the body impurity scattering mobility increases as the temperature decreases after the first temperature power parameter is modified and is consistent with the body impurity scattering target mobility; The second acquisition module is used to obtain the measured current data of the device at an extremely low temperature; A second modification module is used to modify a second temperature power parameter in a lattice scattering mobility formula of the PhuMob model in the TCAD software so that the lattice scattering mobility matches the measured current data after the second temperature power parameter is modified; The third acquisition module is used to acquire the modified PhuMob model according to the modified first temperature power parameter and the modified second temperature power parameter.

9. A storage medium, characterized in that: The storage medium stores a computer program, which is configured to execute the method according to any one of claims 1 to 6 when running.

10. An electronic device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to perform the method according to any one of claims 1 to 6.

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