Semiconductor device and semiconductor device package including the same

Abstract

The present invention discloses a semiconductor device and a semiconductor device package including the semiconductor device. The device includes a light emitting structure, which includes: a first semiconductor layer having aluminum and a second semiconductor layer; an active layer having aluminum and located between the first and second semiconductor layers; the intensity range displayed in the second semiconductor layer is between a first minimum intensity and a first maximum intensity of secondary ions; the intensity displayed in the first semiconductor layer includes a second minimum intensity of secondary ions, which is different from the first minimum intensity; at a first preset distance from the surface of the second semiconductor layer, the second semiconductor layer displays a first intermediate intensity of secondary ions corresponding to the second minimum intensity, and the first maximum intensity appears at a second preset distance from the first preset distance; the ratio of the second preset distance to the first preset distance is in the range of 1:0.2 to 1:1.

Description

[0001] This application is a divisional of the invention patent application with application number "201711194588.9" and invention name "Semiconductor device and semiconductor device package including the semiconductor device".

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the benefit of Korean Patent Application No. 10-2016-0157704 filed in Korea on Nov. 24, 2016, which is hereby incorporated by reference in its entirety. Technical Field

[0004] Embodiments of the present disclosure relate to a semiconductor device and a semiconductor device package including the semiconductor device. Background Art

[0005] Since semiconductor devices including compounds such as GaN and AlGaN have many advantages such as wide and easily adjustable energy band gaps, such semiconductor devices can be used in various fields, such as light-emitting devices, light-receiving devices, various diodes, etc.

[0006] Specifically, light-emitting devices such as light-emitting diodes (LEDs) or laser diodes using III-V or II-VI compound semiconductor materials have the advantages that, since thin film growth technology and element materials have been developed, such light-emitting devices can express various colors such as red, green, blue and ultraviolet light (UV), can use fluorescent materials or by mixing colors to efficiently produce white light, and compared with traditional light sources such as fluorescent lamps and incandescent lamps, such light-emitting devices can achieve low power consumption, semi-permanent life, fast response time, safety and environmental friendliness.

[0007] In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using III-V or II-VI compound semiconductor materials, the light receiving element developed according to the element material generates a photocurrent by absorbing light in various wavelength regions, making it possible to use light in various wavelength regions from the gamma ray region to the radio wavelength region. Moreover, since the light receiving element has the advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, the light emitting device can also be easily used for power control, microwave circuits, or communication modules.

[0008] Therefore, the application of semiconductor devices can be extended to transmission modules used as optical communication devices, light emitting diodes (LEDs) replacing cold cathode fluorescent lamps (CCFLs) used to configure liquid crystal displays (LCD) backlights, white LED light emitting devices that can replace fluorescent lamps or incandescent lamps, vehicle headlights, traffic lights, sensors for sensing gas or fire, etc. In addition, the application of semiconductor devices can be extended to high-frequency application circuits, other power control devices, and communication modules.

[0009] In particular, a light emitting device configured to emit light in a UV wavelength region can be used for curing, medical, and sterilization applications due to the curing and sterilization effects.

[0010] In recent years, research on UV light emitting devices is being actively conducted, but there are problems in that it is difficult to realize a vertical UV light emitting device and light output is reduced when a GaN thin film is used for ohmic characteristics. Summary of the invention

[0011] It is therefore an object of the present invention to provide a light emitting device having an improved light output.

[0012] Furthermore, another object of the present invention is to provide a vertical type ultraviolet (UV) light emitting device.

[0013] Problems to be solved in the embodiments are not limited to the above-mentioned problems, and the present disclosure also includes objects and effects that can be determined from solutions to the problems and embodiments to be described below.

[0014] According to one aspect of the present invention, a semiconductor device is provided, comprising: a light-emitting structure, the light-emitting structure comprising: a first semiconductor layer having aluminum; a second semiconductor layer having aluminum; and an active layer having aluminum and arranged between the first semiconductor layer and the second semiconductor layer; wherein primary ions are bombarded on the light-emitting structure to sputter multiple parts of the first semiconductor layer, the active layer and the second semiconductor layer, and secondary ions include aluminum of respective intensities generated for the first semiconductor layer, the active layer and the second semiconductor layer; the range of intensity exhibited in the second semiconductor layer is between a first minimum intensity of the secondary ions and a first maximum intensity of the secondary ions; the intensity exhibited in the first semiconductor layer includes a second minimum intensity of the secondary ions, the second minimum intensity being different from the first minimum intensity; and at a first preset distance starting from the surface of the second semiconductor layer, the second semiconductor layer exhibits a first intermediate intensity of the secondary ions corresponding to the second minimum intensity between the first minimum intensity and the first maximum intensity, wherein the first maximum intensity occurs at a second preset distance starting from the first preset distance; wherein the ratio of the second preset distance (W1) to the first preset distance (W2) is in the range of 1:0.2 to 1:1.

[0015] A first intensity difference (D1) between the first maximum intensity and the second minimum intensity is greater than a second intensity difference (D2) between the first minimum intensity and the second minimum intensity.

[0016] A ratio of the first intensity difference to the second intensity difference is in a range of 1:0.2 to 1:2.

[0017] The intensity between the first minimum intensity and the first intermediate intensity exhibited in the second semiconductor layer includes two intensity peaks and an intensity valley between the two intensity peaks.

[0018] The intensities at the two intensity peaks are higher than the intensity at the intensity valley.

[0019] The second semiconductor layer is a P-type semiconductor layer and a barrier layer, and the first semiconductor layer is an N-type semiconductor layer.

[0020] The first semiconductor layer exhibits a second maximum intensity at a portion of the first semiconductor layer closest to the active layer.

[0021] The intensity exhibited in the active layer is lower than the first maximum intensity and the second maximum intensity, and higher than the first minimum intensity and the second minimum intensity.

[0022] The intensity exhibited in the active layer includes a plurality of peaks and a plurality of valleys.

[0023] The intensity exhibited in the peaks of the active layer is higher than the intensity exhibited in the valleys of the active layer.

[0024] The second semiconductor layer includes a first surface, a second electrode is disposed on the first surface, the first surface is positioned opposite to the active layer, and the second semiconductor layer exhibits the first minimum intensity at the first surface.

[0025] The second semiconductor layer includes a barrier layer disposed as a portion of the second semiconductor layer closest to the active layer.

[0026] The first maximum intensity is exhibited in the barrier layer.

[0027] The active layer includes one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure or a quantum wire structure.

[0028] The active layer includes a plurality of well layers and a plurality of barrier layers alternately disposed in the active layer.

[0029] The first semiconductor layer includes a first sublayer, a second sublayer and a third sublayer, the second sublayer is arranged between the first sublayer and the third sublayer, wherein the aluminum composition of the second sublayer is lower than the aluminum composition of the third sublayer, and wherein the aluminum composition of the second sublayer is in the range of 30% to 60%.

[0030] The second semiconductor layer includes a first sublayer in contact with the electrode, a second sublayer, and a third sublayer arranged between the active layer and the second sublayer, wherein the aluminum component of each of the first sublayer, the second sublayer and the third sublayer decreases as it moves away from the active layer.

[0031] The secondary ions also include at least one of gallium, nitrogen or carbon.

[0032] The first semiconductor layer includes a first semiconductor material having a chemical formula Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0≤y1≤1, and 0≤x1+y1≤1), and the second semiconductor layer includes a second semiconductor material having a chemical formula Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0≤y2≤1, and 0≤x5+y2≤1).

[0033] With the embodiments of the present disclosure, light output may be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The above and / or other solutions of the present disclosure will become clear and more easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0035] Figure 1 is a conceptual diagram of a light emitting structure according to an embodiment of the present disclosure;

[0036] Figure 2 is a graph showing an aluminum (Al) composition ratio of a light emitting structure according to an embodiment of the present disclosure.

[0037] Figure 3 is a secondary ion mass spectrometry (SIMS) graph showing a change in Al ion intensity of a light emitting structure according to an embodiment of the present disclosure;

[0038] Figure 4 yes Figure 3 an enlarged schematic diagram of a portion of;

[0039] Figure 5 is a picture (photo) of a light emitting structure according to an embodiment of the present disclosure;

[0040] Figure 6 represents atomic force microscopy (AFM) data obtained by measuring the surface of the second conductive semiconductor layer according to one embodiment of the present disclosure;

[0041] Figure 7 is a SIMS graph showing a change in Al ion intensity of a light emitting structure according to another embodiment of the present disclosure;

[0042] Figure 8 is a conceptual diagram of a semiconductor device according to an embodiment of the present disclosure;

[0043] Fig.9A and Fig. 9B is a plan view of a semiconductor device according to an embodiment of the present disclosure; and

[0044] Fig.10 is a conceptual diagram of a light emitting device package according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0045] The present embodiment may be modified into other forms, or various embodiments may be combined, and the scope of the present disclosure is not limited to each embodiment to be described below.

[0046] Although an item described in a specific embodiment is not described in another embodiment, the item can be understood as being related to the other embodiment unless otherwise described in the other embodiment or there is no contradictory interpretation therein.

[0047] For example, when features of structure A are described in one specific embodiment and features of structure B are described in another embodiment, even if an embodiment combining structure A and structure B is not explicitly described, it should be understood that such an embodiment falls within the scope of the present disclosure unless otherwise described in other embodiments or there is no contradictory interpretation therein.

[0048] In the description of the embodiments, when an element is described as being formed "on" or "under" another element, the term "on" or "under" includes the meaning that the two elements are directly in contact with each other and the meaning that one or more other components are indirectly arranged and formed between the two components. Moreover, when it is mentioned that an element is formed "on" or "under" another element, it may include the meaning that the other element is "formed in the upward direction of the element" and "formed in the downward direction of the element".

[0049] Hereinafter, embodiments of the present disclosure will be fully described in detail with reference to the accompanying drawings so as to be suitable for being implemented by those skilled in the art.

[0050] The light emitting structure according to the embodiment of the present disclosure may output light in the ultraviolet (UV) wavelength range. For example, the light emitting structure may emit light in the near UV wavelength range (UV-A), light in the far UV wavelength range (UV-B), or light in the deep UV wavelength range (UV-C). The wavelength range may be determined by the aluminum (Al) composition ratio of the light emitting structure 120.

[0051] For example, UV-A may have a wavelength within the range of 320 nm to 420 nm, UV-B may have a wavelength within the range of 280 nm to 320 nm, and UV-C may have a wavelength within the range of 100 nm to 280 nm.

[0052] Figure 1 is a conceptual diagram of a light emitting structure according to an embodiment of the present disclosure, Figure 2 is a graph showing an aluminum (Al) composition ratio of a light emitting structure according to an embodiment of the present disclosure.

[0053] refer to Figure 1 The semiconductor device according to the present embodiment includes a light emitting structure 120 having a first conductive semiconductor layer 124 , a second conductive semiconductor layer 127 , and an active layer 126 disposed between the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127 .

[0054] The first conductive semiconductor layer 124 may be formed of a III-V or II-VI compound semiconductor and may be doped with a first dopant. For example, the material of the first conductive semiconductor layer 124 may be selected from GaN, AlGaN, InGaN, InAlGaN, etc., which are materials having a chemical formula Inx1 Al y1 Ga 1-x1-y1 The first conductive semiconductor layer 124 may be a semiconductor material of N (0≤x1≤1, 0≤y1≤1, and 0≤x1+y1≤1). Also, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer.

[0055] The first conductive semiconductor layer 124 may include a 1-1 (first-one) conductive semiconductor layer (first sublayer) 124a, a 1-2 (first-two) conductive semiconductor layer (third sublayer) 124c, and an intermediate layer (second sublayer) 124b arranged between the 1-1 conductive semiconductor layer 124a and the 1-2 conductive semiconductor layer 124c.

[0056] The 1-2 conductive semiconductor layer 124c may be disposed closer to the active layer 126 than the 1-1 conductive semiconductor layer 124a. The Al composition of the 1-2 conductive semiconductor layer 124c may be lower than that of the 1-1 conductive semiconductor layer 124a. The Al composition of the 1-2 conductive semiconductor layer 124c may be in the range of 40% to 70%, and the Al composition of the 1-1 conductive semiconductor layer 124a may be in the range of 50% to 80%.

[0057] The thickness of the 1-2 conductive semiconductor layer 124c may be thinner than that of the 1-1 conductive semiconductor layer 124a. The thickness of the 1-1 conductive semiconductor layer 124a may be 130% or more of the thickness of the 1-2 conductive semiconductor layer 124c. According to this structure, since the intermediate layer 124b is formed after the 1-1 conductive semiconductor layer 124a having a high Al composition is fully grown, the overall crystallinity of the light emitting structure 120 can be improved.

[0058] The Al composition of the intermediate layer 124b may be lower than that of the first conductive semiconductor layer 124. The intermediate layer 124b may absorb laser irradiated toward the light emitting structure 120 during a laser lift-off (LLO) process for preventing damage to the active layer 126. Therefore, in the semiconductor device according to the present embodiment, damage to the active layer can be reduced, and thus light output and electrical characteristics thereof can be enhanced.

[0059] The thickness and Al composition of the intermediate layer 124b may be appropriately adjusted to absorb the laser radiated toward the light emitting structure 120 during the LLO process. For example, the Al composition of the intermediate layer 124b may be in the range of 30% to 60%, and the thickness thereof may be in the range of 1nm to 10nm. For example, the intermediate layer 124b may be AlGaN, but is not limited thereto.

[0060] The intermediate layer 124b may be disposed between the first conductive semiconductor layer 124 and the active layer 126. As an alternative embodiment, the intermediate layer 124b may include a first intermediate layer (not shown) having an Al composition lower than that of the first conductive semiconductor layer 124 and a second intermediate layer (not shown) having an Al composition higher than that of the first conductive semiconductor layer 124. A plurality of first intermediate layers and a plurality of second intermediate layers may be alternately configured.

[0061] The active layer 126 may be disposed between the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127. The active layer 126 is a layer in which electrons (or holes) injected through the first conductive semiconductor layer 124 and holes (or electrons) injected through the second conductive semiconductor layer 127 are recombined (or recombined). The active layer 126 may generate light having a UV wavelength by transitioning to a low energy level through the recombination of electrons and holes.

[0062] The active layer 126 may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, but the active layer 126 is not limited thereto.

[0063] The second conductive semiconductor layer 127 may be formed on the active layer 126, may be formed of a group III-V or II-VI compound semiconductor, and may be doped with a second dopant. The second conductive semiconductor layer 127 may be formed of a compound semiconductor having a chemical formula of In x5 Al y2 Ga 1-x5-y2 The second conductive semiconductor layer 127 may be formed of a semiconductor material selected from the group consisting of AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.

[0064] The second conductive semiconductor layer 127 may include 2-1, 2-2, and 2-3 conductive semiconductor layers (first, second, and third sublayers) 127a, 127b, and 127c. The 2-1 conductive semiconductor layer (first sublayer) 127a may have an Al composition lower than that of the 2-2 conductive semiconductor layer 127b.

[0065] The electron blocking layer 129 may be disposed between the active layer 126 and the second conductive semiconductor layer 127. The electron blocking layer 129 may block the flow of first carriers (e.g., electrons) supplied from the first conductive semiconductor layer 124 and flowing out to the second conductive semiconductor layer 127, thereby increasing the probability of electrons and holes being recombined in the active layer 126. The energy band gap of the electron blocking layer 129 may be greater than the energy band gap of the active layer 126 and / or the second conductive semiconductor layer 127.

[0066] For example, the material of the electron blocking layer 129 can be selected from AlGaN, InGaN, InAlGaN, etc., which have the chemical formula In x1 Al y1 Ga 1-x1-y1 A semiconductor material of N (0≤x1≤1, 0≤y1≤1, and 0≤x1+y1≤1).

[0067] refer to Figure 2 , all of the first conductive semiconductor layer 124, the active layer 126, the second conductive semiconductor layer 127, and the electron blocking layer 129 may include Al. Therefore, the first conductive semiconductor layer 124, the active layer 126, the second conductive semiconductor layer 127, and the electron blocking layer 129 may have an AlGaN composition.

[0068] The Al composition of the electron blocking layer 129 may be in the range of 50% to 100%. When the Al composition of the electron blocking layer 129 is less than 50%, there is a problem in that the height of the energy barrier for blocking electrons may be insufficient and light emitted from the active layer 126 may be absorbed by the electron blocking layer 129.

[0069] The electron blocking layer 129 may include a 1-1 portion 129a and a 1-2 portion 129c. The electron blocking layer 129 may include a second dopant. The second dopant may include a p-type dopant such as Mg, Zn, Ca, Sr, and Ba. When the second dopant is included in the electron blocking layer 129, the electron blocking layer 129 may include the same dopant as the second conductive semiconductor layer. However, the present disclosure is not limited thereto, and the electron blocking layer 129 may have the same polarity as the second conductive semiconductor layer 127 and may include a second dopant different from the dopant included in the second conductive semiconductor layer.

[0070] According to the present embodiment, the injection efficiency of the second carriers (eg, holes) is increased by the 1-1 portion 129a and the 1-2 portion 129c, and the resistance is reduced, so that the operating voltage Vf is improved.

[0071] The Al composition of the 1-1 portion 129a may be increased near the second conductive semiconductor layer 127. The Al composition of the 1-1 portion 129a may be in the range of 80% to 100%. That is, the 1-1 portion 129a may be AlGaN or AlN. As an alternative, the 1-1 portion 129a may be a superlattice layer in which AlGaN and AlN are alternately configured.

[0072] The thickness of the 1-1 portion 129a may be in the range of about 0.1 nm to 4 nm. When the thickness of the 1-1 portion 129a is thinner than 0.1 nm, there is a problem that the movement of the first carrier (e.g., electron) may not be effectively blocked. On the other hand, when the thickness of the 1-1 portion 129a is thicker than 4 nm, the injection efficiency of the second carrier (e.g., hole) into the active layer may be reduced.

[0073] An undoped portion 129 b not doped with the second dopant may be disposed between the 1-1 portion 129 a and the 1-2 portion 129 c. The undoped portion 129 b may serve to prevent the dopant from diffusing from the second conductive semiconductor layer 127 to the active layer 126 .

[0074] The second conductive semiconductor layer 127 may include 2-1, 2-2, and 2-3 conductive semiconductor layers 127a, 127b, and 127c.

[0075] The thickness of the 2-2 conductive semiconductor layer 127b may be greater than 10nm and less than 50nm. For example, the thickness of the 2-2 conductive semiconductor layer 127b may be 25nm. When the thickness of the 2-2 conductive semiconductor layer 127b is less than 10nm, the resistance may increase in the horizontal direction, so that the current injection efficiency may be reduced. However, when the thickness of the 2-2 conductive semiconductor layer 127b is greater than 50nm, the resistance increases in the vertical direction, so that the current injection efficiency may be reduced.

[0076] The Al composition of the 2-2 conductive semiconductor layer 127b may be higher than the Al composition of the well layer 126a. In order to generate UV light, the Al composition of the well layer 126a may be in the range of about 30% to 70%. When the Al composition of the 2-2 conductive semiconductor layer 127b is lower than the Al composition of the well layer 126a, the light extraction efficiency may be reduced because the 2-2 conductive semiconductor layer 127b absorbs light. However, the present disclosure is not limited thereto. For example, the Al composition in some parts of the 2-2 conductive semiconductor layer 127b may be lower than the Al composition of the well layer 126a.

[0077] The Al composition of the 2-2 conductive semiconductor layer 127b may be greater than 40% and less than 80%. When the Al composition of the 2-2 conductive semiconductor layer 127b is less than 40%, there is a problem in that the light absorption rate increases, and when the Al composition thereof is greater than 80%, the current injection efficiency may be deteriorated. For example, when the Al composition of the well layer 126a is 30%, the Al composition of the 2-2 conductive semiconductor layer 127b may be 40%.

[0078] The Al composition of the 2-1 conductive semiconductor layer 127a may be lower than that of the well layer 126a. When the Al composition of the 2-1 conductive semiconductor layer 127a is higher than that of the well layer 126a, the resistance between the 2-1 conductive semiconductor layer 127a and the second electrode increases, so that sufficient ohmic contact cannot be achieved and the current injection efficiency is reduced.

[0079] The Al composition of the 2-1 conductive semiconductor layer 127a may be greater than 1% and less than 50%. When the Al composition of the 2-1 conductive semiconductor layer 127a is greater than 50%, sufficient ohmic contact cannot be achieved between the 2-1 conductive semiconductor layer 127a and the second electrode, and when the Al composition is less than 1%, the Al composition is substantially the same as the GaN composition to absorb light.

[0080] The thickness of the 2-1 conductive semiconductor layer 127a may be in the range of 1 nm to 30 nm or in the range of 1 nm to 10 nm. As described above, since the Al component of the 2-1 conductive semiconductor layer 127a is low for ohmic contact, the 2-1 conductive semiconductor layer 127a may absorb UV light. Thus, from the viewpoint of light output, it is advantageous to control the thickness of the 2-1 conductive semiconductor layer 127a to be as thin as possible.

[0081] However, when the thickness of the 2-1 conductive semiconductor layer 127a is controlled to be 1 nm or less, the Al composition may change suddenly, so that the crystallinity may be reduced. Moreover, when the thickness of the 2-1 conductive semiconductor layer 127a is too thin, the sheet resistance may increase and the electrical characteristics of the semiconductor device may be reduced. In addition, when the thickness thereof is greater than 30 nm, the amount of light absorbed by the 2-1 conductive semiconductor layer 127a will be too large and the light output efficiency may be reduced.

[0082] The thickness of the 2-1 conductive semiconductor layer 127a may be smaller than the thickness of the 2-2 conductive semiconductor layer 127b. The thickness ratio of the 2-2 conductive semiconductor layer 127b to the 2-1 conductive semiconductor layer 127a may be in the range of 1.5:1 to 20:1. When the thickness ratio is less than 1.5:1, the thickness of the 2-2 conductive semiconductor layer 127b is too thin, and the current injection efficiency may be reduced. Whereas, when the thickness ratio is greater than 20:1, the thickness of the 2-1 conductive semiconductor layer 127a is too thin, and the ohmic contact reliability may be reduced.

[0083] The Al composition of the 2-2 conductive semiconductor layer 127b may decrease as it moves away from the active layer 126. In addition, the Al composition of the 2-1 conductive semiconductor layer 127a may decrease as it moves away from the active layer 126.

[0084] In this regard, the decrease in Al composition of the 2-1 conductive semiconductor layer 127a may be greater than the decrease in Al composition of the 2-2 conductive semiconductor layer 127b. That is, the variation in Al composition of the 2-1 conductive semiconductor layer 127a in the thickness direction thereof may be greater than the variation in Al composition of the 2-2 conductive semiconductor layer 127b in the thickness direction thereof.

[0085] Since the thickness of the 2-2 conductive semiconductor layer 127b should be greater than the thickness of the 2-1 conductive semiconductor layer 127a, and the Al composition of the 2-2 conductive semiconductor layer 127b should be higher than the Al composition of the well layer 126a, the reduction of its Al composition may be relatively slow. However, since the thickness of the 2-1 conductive semiconductor layer 127a is as described above and its Al composition varies greatly, the reduction of its Al composition may be relatively large.

[0086] The 2-3 conductive semiconductor layer 127c may have a uniform Al composition. The thickness of the 2-3 conductive semiconductor layer 127c may be in the range of 20nm to 60nm. The Al composition of the 2-3 conductive semiconductor layer 127c may be in the range of 40% to 70%.

[0087] As described above, the thickness of the 2-1 conductive semiconductor layer 127a may be in the range of 1nm to 10nm, the thickness of the 2-2 conductive semiconductor layer 127b may be in the range of 10nm to 50nm, and the thickness of the 2-3 conductive semiconductor layer 127c may be in the range of 20nm to 60nm.

[0088] Therefore, the ratio of the thickness of the 2-1 conductive semiconductor layer 127a to the overall thickness of the second conductive semiconductor layer 127 may be in the range of 1:3 to 1:120. However, the present disclosure is not limited thereto, and the ratio of the thickness of the 2-1 conductive semiconductor layer 127a to the overall thickness of the second conductive semiconductor layer 127 may be in the range of 1:3 to 1:50 or in the range of 1:3 to 1:70.

[0089] Figure 3 is a secondary ion mass spectrometry (SIMS) diagram showing the change in Al ion intensity of a light emitting structure according to an embodiment of the present disclosure, Figure 4 yes Figure 3 An enlarged schematic diagram of a portion of .

[0090] The SIMS data may be analytical data obtained by a time-of-flight secondary ion mass spectrometer (TOF-SIMS).

[0091] SIMS data can be obtained by irradiating the surface of the target with primary ions and counting and analyzing the number of secondary ions released from the surface. The primary ions can be selected from O 2+ , Cs + 、Bi + Etc. For example, the acceleration voltage may be in the range of 20 keV to 30 keV, the radiation current may be in the range of 0.1 pA to 5.0 pA, and the implantation area may be 20 nm×20 nm, but the present disclosure is not limited thereto.

[0092] SIMS data may be obtained by collecting secondary ion mass spectra by etching that is gradually performed on the surface of the second conductive semiconductor layer (ie, at a depth of zero) in the direction of the first conductive semiconductor layer.

[0093] However, the present disclosure is not limited thereto, and various measurement conditions for detecting the AlGaN-based and / or GaN-based semiconductor material and the first and second dopant materials may be used.

[0094] refer to Figure 3 and Figure 4 , in the light emitting structure, the intensity of Al ions (ie, secondary ions) may vary from the first conductive semiconductor layer 124 toward the second conductive semiconductor layer 127. The second conductive semiconductor layer 127 may include a P type semiconductor layer and a barrier layer.

[0095] The light emitting structure may include a first intermediate intensity P1 having the lowest Al intensity in the first conductive semiconductor layer 124, a first maximum intensity P2 having the highest Al intensity in the light emitting structure, and a first minimum intensity P3 having the lowest Al intensity in the light emitting structure.

[0096] The second semiconductor layer 127 includes a first minimum intensity P3 of secondary ions and a first maximum intensity P2 of secondary ions. The first semiconductor layer 124 includes a second minimum intensity P5 of secondary ions and a second maximum intensity P4 of secondary ions. The second minimum intensity P5 is different from the first minimum intensity P3.

[0097] The first intermediate intensity P1 may have the same ion strength as the intermediate layer 124b arranged in the first conductive semiconductor layer 124. The first maximum intensity P2 may be the 1-1 portion 129a of the electron blocking layer 129. Moreover, the first minimum intensity P3 may be a surface layer (i.e., a 2-1 conductive semiconductor layer) at which the second conductive semiconductor layer is directly in contact with the second electrode (i.e., a P ohmic electrode). The result of the SIMS analysis may be interpreted as a spectrum of secondary ion intensity with respect to a material or its doping concentration, and when analyzing the secondary ion intensity or the doping concentration, noise occurring in the range of 0.9 to 1.1 times the intensity or the doping concentration may be included in the result. Therefore, when referring to "equal to / the same as...", it may refer to noise greater than or equal to 0.9 times and less than or equal to 1.1 times of a specific secondary ion intensity or doping concentration included in the result. In this regard, the first intermediate intensity P1 may have the same ion strength as the highest point of the secondary ion intensity of the intermediate layer 124b.

[0098] The second semiconductor layer includes two intensity peaks P11 and an intensity valley P12 located between the first minimum intensity P3 and the first intermediate intensity P1.

[0099] The intensity exhibited in the active layer 126 is lower than the first and second maximum intensities P2 and P4 and higher than the first and second minimum intensities P3 and P4. The intensity exhibited in the active layer 126 includes a plurality of peaks P61 and a plurality of valleys P62. The intensity exhibited in the plurality of peaks P61 of the active layer 126 is higher than the intensity exhibited in the plurality of valleys P62 of the active layer 126.

[0100] In addition to the method using SIMS spectrum, the measurement of intensity can be performed by measurement methods such as transmission electron microscopy (TEM), X-ray diffraction spectroscopy (XRD), etc.

[0101] The ratio D1:D2 of the first Al intensity difference D1 between the first intermediate intensity P1 and the first maximum intensity P2 to the second Al intensity difference D2 between the first intermediate intensity P1 and the first minimum intensity P3 may be in the range of 1:0.2 to 1:2 or in the range of 1:0.2 to 1:1. When the ratio D1:D2 is less than 1:0.2, the second Al intensity difference D2 is relatively small, and there is a problem in that the Al intensity may not be sufficiently reduced. Therefore, the contact resistance with the second electrode may increase. Moreover, when the ratio D1:D2 is greater than 1:2, the second Al intensity difference D2 is relatively large, and there is a problem in that the Al intensity is suddenly changed and the crystallinity is reduced.

[0102] Conventionally, a thin GaN layer is inserted between an electrode and a second conductive semiconductor layer for forming an ohmic contact therebetween. However, in this case, since the GaN layer does not contain Al, the second Al intensity difference D2 may be suddenly increased. As a result, the ratio D1:D2 of the first Al intensity difference D1 to the second Al intensity difference D2 becomes out of the range of 1:0.2 to 1:2.

[0103] refer to Figure 4 Based on SIMS data, a ratio W1:W2 of the first thickness W1 to the second thickness W2 may be in the range of 1:0.2 to 1:1. The first thickness W1 may be a thickness of the light emitting structure between the first intermediate intensity P1 and the first maximum intensity P2, and the second thickness W2 may be a thickness of the light emitting structure between the first intermediate intensity P1 and the first minimum intensity P3.

[0104] When the ratio W1:W2 of the first thickness W1 to the second thickness W2 is less than 1:0.2, the second thickness W2 is relatively small, and a change in Al intensity may suddenly change in the second conductive semiconductor layer 127. As a result, crystallinity may be reduced.

[0105] Also, when the ratio W1:W2 is greater than 1:1, the second thickness W2 is relatively large, and there is a problem in that light extraction efficiency is reduced.

[0106] Figure 5 is a picture of a light emitting structure according to an embodiment of the present disclosure, Figure 6 denoted atomic force microscope (AFM) data obtained by measuring the surface of the second conductive semiconductor layer according to one embodiment of the present disclosure.

[0107] refer to Figure 5 The light emitting structure may be configured such that the first conductive semiconductor layer 124, the active layer 126, the electron blocking layer 129, and the second conductive semiconductor layer 127 are sequentially stacked. The second electrode may directly contact the surface 127a of the second conductive semiconductor layer 127 to form an ohmic contact therebetween.

[0108] refer to Figure 6 , it can be seen that clusters are observed on the surface layer of the second conductive semiconductor layer 127. According to the embodiment, since the Al composition of the 2-1 conductive type semiconductor layer as the surface layer is in the range of 1% to 10%, materials such as AlN, AlGaN, and GaN are generated in the form of clusters, so that the junction area can be increased. As a result, the electrical characteristics can be improved.

[0109] Figure 7 is a SIMS graph showing a change in Al ion intensity of a light emitting structure according to another embodiment of the present disclosure.

[0110] refer to Figure 7 , the ratio D1:D2 of the first Al intensity difference D1 between the first intermediate intensity P1 and the first maximum intensity P2 to the second Al intensity difference D2 between the first intermediate intensity P1 and the first minimum intensity P3 is measured to be 1:0.72. Therefore, it can be determined that the ratio D1:D2 satisfies the range of 1:0.2 to 1:2. The first Al intensity difference D1 is measured to be 6.8, and the second Al intensity difference D2 is measured to be 4.9.

[0111] Figure 8 is a conceptual diagram of a semiconductor device according to an embodiment of the present disclosure, Fig.9A and Fig. 9B is a plan view of a semiconductor device according to an embodiment of the present disclosure.

[0112] refer to Figure 8 The above structure of the light emitting structure 120 may be directly applied to the present embodiment. The first electrode 142 may be disposed on the upper surface of the recess 128 to be electrically connected to the first conductive semiconductor layer 124. The second electrode 246 may be formed under the second conductive semiconductor layer 127.

[0113] The second electrode 246 may make contact with the 2-2 conductive semiconductor layer 127b to be electrically connected thereto.

[0114] Since the Al composition of the 2-1 conductive semiconductor layer 127a contacting the second electrode 246 is in the range of 1% to 10%, an ohmic connection can be easily established between the 2-1 conductive semiconductor layer 127a and the second electrode 246. Also, since the thickness of the 2-1 conductive semiconductor layer 127a is greater than 1nm and less than 30nm, the amount of light absorption is small.

[0115] The first electrode 142 and the second electrode 246 may be ohmic electrodes. The first electrode 142 and the second electrode 246 may be formed of a material including at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), nitrided IZO (IZON), Al-GaZnO (AGZO), In-Ga ZnO (IGZO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but the present disclosure is not limited to these materials.

[0116] The second electrode pad 166 may be arranged at the edge of one side of the semiconductor device. The central portion of the second electrode pad 16 is recessed so that the upper surface of the second electrode pad 166 may have a recessed portion and a protruding portion. A wire (not shown) may be bonded to the recessed portion of the upper surface. Therefore, the bonding area may be widened so that the second electrode pad 166 and the wire may be more securely bonded.

[0117] The second electrode pad 166 may serve to reflect light, so that light extraction efficiency can be improved when the second electrode pad 166 is close to the light emitting structure 120 .

[0118] The height of the protruding portion of the second electrode pad 166 may be higher than that of the active layer 126. Therefore, the second electrode pad 166 may reflect light emitted from the active layer 126 in a horizontal direction of the device upward, thereby improving light extraction efficiency and controlling a directivity angle.

[0119] The first insulating layer 131 may be partially opened under the second electrode pad 166 so that the second conductive layer 150 and the second electrode 246 are electrically connected. The passivation layer 180 may be formed on the upper surface and the side of the light emitting structure 120. The passivation layer 180 may contact the first insulating layer 131 adjacent to the second electrode 246 and below the second electrode 246.

[0120] For example, the width d22 of the portion of the second electrode 246 that contacts the second conductive layer 150 through the opened first insulating layer 131 may be in the range of 40 μm to 90 μm. When the width d22 is less than 40 μm, there is a problem in that the operating voltage may increase, and when the width d22 is greater than 90 μm, it is difficult to ensure a process margin for not exposing the second conductive layer 150 to the outside. When the second conductive layer 150 is exposed to the outer area of ​​the second electrode 246, the reliability of the light emitting device may be reduced. Therefore, preferably, the width d22 may be in the range of 60% to 95% relative to the overall width of the second electrode pad 166.

[0121] The first insulating layer 131 may electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127. Also, the first insulating layer 131 may electrically insulate the second electrode 246 and the second conductive layer 150 from the first conductive layer 165.

[0122] The first insulating layer 131 may be made of SiO2, Si x O y 、Si3N4、Si x N y 、SiO x N y , Al2O3, TiO2, AlN, etc., but is not limited thereto. The first insulating layer 131 may be formed as a single layer or multiple layers. For example, the first insulating layer 131 may be a distributed Bragg reflector (DBR) having a multilayer structure including AlSi oxide or Ti compound. However, the present disclosure is not limited thereto, and the first insulating layer 131 may also include various reflective structures.

[0123] When the first insulating layer 131 performs an insulating function, light emitted from the side of the active layer 126 may be reflected upward to improve light extraction efficiency. As will be described below, in a UV semiconductor device, as the number of recesses 128 increases, light extraction efficiency may be more effective.

[0124] The second conductive layer 150 may cover the second electrode 246. Therefore, the second electrode pad 166, the second conductive layer 150, and the second electrode 246 may form one electrical channel.

[0125] The second conductive layer 150 may completely surround the second electrode 246 to contact the side and upper surface of the first insulating layer 131. The second conductive layer 150 may be made of a material having good adhesive strength with the first insulating layer 131, at least one material is selected from the group consisting of Cr, Al, Ti, Ni, Au, etc. and alloys thereof, and may be formed as a single layer or multiple layers.

[0126] When the second conductive layer 150 is in contact with the side and upper surface of the first insulating layer 131, the thermoelectric reliability of the second electrode 246 can be improved. Also, the second conductive layer 150 may have a reflective function for reflecting light emitted between the first insulating layer 131 and the second electrode 246 upward.

[0127] The second conductive layer 150 may also be disposed in a region between the first insulating layer 131 and the second electrode 246, and the second conductive semiconductor layer may be exposed to the region at a second spacing distance. The second conductive layer 150 may contact the side and upper surface of the second electrode 246 and the side and upper surface of the first insulating layer 131 at the second spacing distance.

[0128] Also, the second conductive layer 150 and the second conductive semiconductor layer 127 may contact each other within the second spacing distance to be arranged in a region where a Schottky junction is formed, and may form a Schottky junction to facilitate current diffusion.

[0129] The second insulating layer 132 electrically insulates the second electrode 246 and the second conductive layer 150 from the first conductive layer 165. The first conductive layer 165 may pass through the second insulating layer 132 to be electrically connected to the first electrode 142.

[0130] The first conductive layer 165 and the bonding layer 160 may be arranged along the bottom surface of the light emitting structure 120 and the shape of the recess 128. The first conductive layer 165 may be made of a material having excellent reflectivity. For example, the first conductive layer 165 may include Al. When the first conductive layer 165 includes Al, the first conductive layer 165 serves to reflect light emitted from the active layer 126 upward, so that light extraction efficiency can be improved.

[0131] The bonding layer 160 may include a conductive material. For example, the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, Al, silicon, silver, nickel, and copper, or an alloy thereof.

[0132] The substrate 170 may be made of a conductive material. For example, the substrate 170 may include a metal or a semiconductor material. The substrate 170 may be a metal having excellent electrical conductivity and / or excellent thermal conductivity. In this case, the heat generated during operation of the semiconductor device can be quickly released to the outside.

[0133] The substrate 170 may include a material selected from the group consisting of silicon, molybdenum, tungsten, copper, and Al, or an alloy thereof.

[0134] Irregularities may be formed on the upper surface of the light emitting structure 120. The irregularities can improve the extraction efficiency of light emitted from the light emitting structure 120. The irregularities may have different average heights according to UV wavelengths, and in the case of UV-C, when the height of each irregularity is in the range of about 300 nm to 800 nm and the average height thereof is in the range of 500 nm to 600 nm, the light extraction efficiency can be improved.

[0135] Fig.9A and Fig. 9B is a plan view of a semiconductor device according to an embodiment of the present disclosure.

[0136] When the Al composition of the light emitting structure 120 increases, the current distribution characteristics inside the light emitting structure 120 may be reduced. Also, the active layer 126 increases the amount of light emitted from its side (ie, TM mode) compared to GaN-based blue light emitting devices. The TM mode may be generated in UV semiconductor devices.

[0137] According to the present embodiment, for current diffusion, the first electrode 142 may be arranged so that the number of recesses 128 formed in the GaN semiconductor emitting light having a wavelength in the UV region is relatively greater than that of the GaN semiconductor emitting blue light.

[0138] refer to Fig.9A , when the Al component is increased, the current distribution characteristics may deteriorate. Therefore, the current is distributed only to the position adjacent to each first electrode 142, so that the current density may be sharply reduced at the position away from each first electrode 142. Therefore, the effective light-emitting area P2 may be narrowed. The effective light-emitting area P2 can be defined as an area from a boundary point based on the current density at a current density of 40% or less to a position adjacent to the first electrode 142 with the highest current density. For example, the effective light-emitting area P2 can be adjusted according to the level of the injected current and the Al component in the range of 5μm to 40μm from the center of each recess 128.

[0139] Specifically, the low current density region P3 between adjacent first electrodes 142 has low current density and thus hardly contributes to light emission. Therefore, in the present embodiment, the first electrode 142 is arranged in the low current density region P3 having low current density so that light output can be improved.

[0140] Generally, since the GaN semiconductor layer has relatively excellent current distribution characteristics, it may be preferable to minimize the area of ​​the recess 128 and the first electrode 142. This is because, when the area of ​​the recess 128 and the first electrode 142 increases, the area of ​​the active layer 126 decreases. However, in the embodiment, since the current distribution characteristics due to the high Al composition are relatively low, it may be preferable to reduce the low current density region P3 by increasing the number of first electrodes 142 even at the expense of the area of ​​the active layer 126.

[0141] refer to Fig. 9B , when the number of recesses 128 is 48, instead of being arranged horizontally and vertically in a straight line, the recesses 128 may be arranged in a folded line form. In this case, the area of ​​the low current density region P3 is relatively narrow, so most of the active layer can participate in light emission. When the number of recesses 128 is in the range of 82 to 110, the current can be distributed more efficiently, so that the operating voltage can be further reduced and the light output can be improved. In a semiconductor device that emits UV-C light, when the number of recesses 128 is less than 70, electrical characteristics and optical characteristics may be reduced, and when the number of recesses 128 is greater than 110, although the volume of the light-emitting layer is reduced so that the optical characteristics may be reduced, the electrical characteristics can be improved.

[0142] The first area where the plurality of first electrodes 142 contact the first conductive semiconductor layer 124 may be in the range of 7.4% to 20% or in the range of 10% to 20% of the maximum cross-sectional area in the horizontal direction relative to the light emitting structure 120. The first area may be the sum of several areas where the plurality of first electrodes 142 contact the first conductive semiconductor layer 124.

[0143] When the first area of ​​the plurality of first electrodes 142 is less than 7.4%, the light output may be reduced due to insufficient current distribution characteristics, and when the first area thereof exceeds 20%, the area of ​​the active layer and the second electrode is excessively reduced, causing problems in that the operating voltage increases and the light output decreases.

[0144] Moreover, the entire area of ​​the plurality of recesses 128 may be within a range of 13% to 30% relative to the maximum cross-sectional area of ​​the light emitting structure 120 in the horizontal direction. When the entire area of ​​the plurality of recesses 128 does not satisfy the above conditions, it is difficult to control the entire area of ​​the first electrode 142 to be within a range of 7.4% to 20%. In addition, there is a problem in that the operating voltage increases and the light output decreases.

[0145] The second region where the second electrode 246 contacts the second conductive semiconductor layer 127 may be within a range of 35% to 70% of the maximum cross-sectional area in the horizontal direction with respect to the light emitting structure 120. The second region may be the entire region where the second electrode 246 contacts the second conductive semiconductor layer 127.

[0146] When the second area is less than 35%, the area of ​​the second electrode 246 is too small, so that there is a problem that the operating voltage increases and the injection efficiency of the second carrier (e.g., hole) decreases. When the second area exceeds 70%, the first area may not be effectively wide, so that there is a problem that the injection efficiency of the first carrier (e.g., electron) decreases.

[0147] The first area and the second area have an inverse relationship. That is, when the number of recesses is increased to increase the number of first electrodes, the area of ​​the second electrode decreases. In order to increase light output, the diffusion characteristics of electrons and holes should be balanced. Therefore, it is important to determine a suitable ratio of the first area and the second area.

[0148] A ratio of first regions where the plurality of first electrodes contact the first conductive semiconductor layer to second regions where the second electrodes contact the second conductive semiconductor layer (ie, first region:second region) may be in the range of 1:3 to 1:10.

[0149] When the area ratio is greater than 1:10, the first area is relatively small, so that the current distribution characteristics may be deteriorated. However, when the area ratio is less than 1:3, there is a problem in that the second area is relatively small.

[0150] Fig.10 is a conceptual diagram of a light emitting device package according to an embodiment of the present disclosure.

[0151] The semiconductor device is configured as a package and can be used to harden the device of resin, resist, spin-on dielectric material (SOD) or spin-on glass (SOG). In addition, the semiconductor device package can be used for clinical medical applications or electronic devices, such as disinfection devices for air purifiers or water purifiers.

[0152] refer to Fig.10 , the semiconductor device package may include a body 2 formed with a recess 3, a semiconductor device 1 disposed on the body 2, and a pair of lead frames 5a and 5b disposed on the body 2 and electrically connected to the semiconductor device 1. The semiconductor device 1 may include all of the above configurations.

[0153] The body 2 may include a material or coating for reflecting UV light. The body 2 may be formed by stacking a plurality of layers 2a, 2b, 2c, and 2d. The plurality of layers 2a, 2b, 2c, and 2d may be the same material or may include different materials.

[0154] The recess 3 may be formed to become wider away from the semiconductor device, and a step 3 a may be formed on an inclined surface of the recess 3 .

[0155] The light transmission layer 4 may cover the recess 3. The light transmission layer 4 may be made of a glass material, but is not limited thereto. The light transmission layer 4 may include any material that can effectively transmit UV light. The interior of the recess 3 may be an empty space.

[0156] Semiconductor devices can be used as light sources for lighting systems, image display devices, or light-emitting devices. That is, semiconductor devices can be applied to various electronic devices arranged in a housing to provide light. For example, when semiconductor devices and RGB fluorescent materials are used in combination, white light with a higher color rendering index (CRI) can be achieved.

[0157] The above-mentioned semiconductor device may be configured in the form of, for example, a light emitting device package to be used as a light source of a lighting system, an image display device, a light emitting device, or the like.

[0158] When the semiconductor device is used as a backlight unit of an image display device, the semiconductor device can be used as an edge-type backlight unit or a direct-type backlight unit, and when the semiconductor device is used as a light source of a lighting device, the semiconductor device can be used as a lighting device or a bulb-type device, and can also be used as a light source for a mobile terminal.

[0159] In addition to the above-mentioned LEDs, the light emitting devices include laser diodes.

[0160] Similar to the light emitting device, the laser diode may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above structure. Moreover, the laser diode uses the electroluminescence phenomenon in which, after the p-type first conductive semiconductor and the n-type second conductive semiconductor are joined, light is emitted when current flows therein, but the directionality and phase of the light possessed by the laser diode are different from the directionality and phase of the light emitted from the light emitting device. That is, the laser diode can emit light having the same phase in the same direction at a specific single wavelength (i.e., a monochromatic beam) using a phenomenon called stimulated emission and a structural interference phenomenon, and with the above characteristics, the laser diode can be used for optical communications, medical equipment, semiconductor processing equipment, and the like.

[0161] A photodetector is an example of a light receiving device, which is a transducer that detects light and converts the intensity of the light into an electrical signal. Examples of photodetectors include photocells (silicon and selenium), light conversion devices (cadmium sulfide and cadmium selenide), photodiodes (PDs) (e.g., PDs with a peak wavelength in a visible blind spectral region or a truly blind spectral region), phototransistors, photomultiplier tubes, phototubes (e.g., vacuum and gas-filled types), infrared (IR) detectors, etc., but embodiments are not limited thereto.

[0162] In addition, semiconductor devices such as photodetectors can be manufactured using direct bandgap semiconductors that generally have higher light conversion efficiency. In addition, photodetectors have a variety of structures, and include a pin-type photodetector using a PN junction as the most common structure, a Schottky photodetector using a Schottky junction, and a metal-semiconductor-metal (MSM) type photodetector.

[0163] Similar to a light emitting device, a PD may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above structure, and may be configured with a PN junction or a pin structure. The PD operates by applying a reverse bias or a zero bias, and when light enters the PD, electrons and holes are generated, causing current to flow. In this regard, the magnitude of the current may be approximately proportional to the intensity of the light incident on the PD.

[0164] A photovoltaic cell or a solar cell is a PD and can convert light into current. Similar to a light emitting device, a solar cell may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above structure.

[0165] Furthermore, the PD can be used as a rectifier of an electronic circuit by using the rectification characteristics of a general diode of a PN junction, and can be applied to an oscillation circuit or the like by being utilized as a microwave circuit.

[0166] In addition, the semiconductor devices described above need not be implemented only with semiconductors, and in some cases may also include metal materials. For example, semiconductor devices such as light receiving devices may be implemented using Ag, Al, Au, In, Ga, N, Zn, Se, P, and As, or semiconductor materials doped with p-type or n-type dopants or at least one of intrinsic semiconductor materials.

[0167] According to the embodiments of the present disclosure, light absorption is suppressed in a semiconductor device, so that light output can be enhanced.

[0168] Various advantageous advantages and effects of the present disclosure are not limited to the detailed description, and these advantages and effects should be easily understood through the description of the detailed embodiments of the present disclosure.

[0169] Although the present invention has been mainly described with reference to the embodiments, it should be understood that the present disclosure is not limited to the disclosed exemplary embodiments, and those skilled in the art can make various improvements and applications without departing from the purpose of the present invention. For example, each component specifically shown in the embodiments can be improved and implemented. Differences related to these improvements and applications should be interpreted as falling within the scope of the present disclosure defined by the appended claims.

Claims

1. A semiconductor device, comprising: A light emitting structure, comprising: a first semiconductor layer comprising aluminum; a second semiconductor layer comprising aluminum; and an active layer having aluminum and disposed between the first semiconductor layer and the second semiconductor layer; wherein primary ions are bombarded on the light emitting structure to sputter portions of the first semiconductor layer, the active layer, and the second semiconductor layer, and secondary ions include aluminum generated with respective intensities for the first semiconductor layer, the active layer, and the second semiconductor layer; the range of intensities exhibited in the second semiconductor layer being between a first minimum intensity of secondary ions and a first maximum intensity of secondary ions; the intensity exhibited in the first semiconductor layer includes a second minimum intensity of secondary ions, the second minimum intensity being different from the first minimum intensity; and the second semiconductor layer exhibiting a first intermediate intensity of secondary ions corresponding to the second minimum intensity between the first minimum intensity and the first maximum intensity at a first predetermined distance from a surface of the second semiconductor layer, wherein the first maximum intensity occurs at a second predetermined distance from the first predetermined distance; Wherein, a ratio of the second preset distance (W1) to the first preset distance (W2) is in a range of 1:0.2 to 1:

1.

2. The semiconductor device according to claim 1, wherein The second semiconductor layer includes a surface layer, and a thickness of the surface layer is in a range of 1 nm to 30 nm.

3. The semiconductor device according to claim 2, wherein: The second semiconductor layer includes a 2-1 conductive semiconductor layer, a 2-2 conductive semiconductor layer and a 2-3 conductive semiconductor layer, the 2-1 conductive semiconductor layer is the surface layer, and the 2-3 conductive semiconductor layer is disposed between the 2-2 conductive semiconductor layer and the active layer.

4. The semiconductor device according to claim 1, wherein: The second semiconductor layer includes at least a 2-1 conductive semiconductor layer and a 2-2 conductive semiconductor layer, wherein the aluminum content of at least one conductive semiconductor layer decreases with a slope as it is farther away from the active layer.

5. The semiconductor device according to claim 4, wherein: The aluminum content of the 2-1 conductive semiconductor layer and the 2-2 conductive semiconductor layer both decreases at a slope as they move away from the active layer. The aluminum content of the 2-1 conductive semiconductor layer is lower than that of the 2-2 conductive semiconductor layer. The farther the aluminum content of the 2-1 conductive semiconductor layer is from the active layer, the more it decreases at a first slope. The farther the aluminum content of the 2-2 conductive semiconductor layer is from the active layer, the more it decreases at a second slope.

6. The semiconductor device according to claim 5, wherein: The variation of the aluminum composition of the 2-1 conductive semiconductor layer in the thickness direction thereof is greater than the variation of the aluminum composition of the 2-2 conductive semiconductor layer in the thickness direction thereof.

7. The semiconductor device according to claim 4 or 6, wherein: The thickness of the 2-1 conductive semiconductor layer is smaller than the thickness of the 2-2 conductive semiconductor layer.

8. The semiconductor device according to claim 7, wherein: A ratio of a thickness of the 2-2 conductive semiconductor layer to a thickness of the 2-1 conductive semiconductor layer is in the range of 1.5:1 to 20:

1.

9. The semiconductor device according to claim 3, wherein: The 2-1 conductive semiconductor layer exhibits the first minimum intensity, and the 2-2 conductive semiconductor layer exhibits the first intermediate intensity.

10. The semiconductor device according to claim 1, wherein The first semiconductor layer includes a 1-1 conductive semiconductor layer, a 1-2 conductive semiconductor layer and an intermediate layer, wherein the intermediate layer is disposed between the 1-1 conductive semiconductor layer and the 1-2 conductive semiconductor layer, and the 1-2 conductive semiconductor layer is closer to the active layer than the 1-1 conductive semiconductor layer.

11. The semiconductor device according to claim 10, wherein: The Al content of the intermediate layer is 30%-60%.

12. The semiconductor device according to claim 1, further comprising an electron blocking layer, in, The electron blocking layer is disposed between the active layer and the second semiconductor layer, and Wherein, the electron blocking layer exhibits the first maximum intensity.

13. The semiconductor device according to claim 10, wherein: The aluminum content of the intermediate layer is lower than that of the 1-2 conductive semiconductor layer.

14. The semiconductor device according to claim 1, wherein The first semiconductor layer exhibits a second maximum intensity at a portion of the first semiconductor layer closest to the active layer.

15. The semiconductor device according to claim 14, wherein: The intensity exhibited in the active layer is lower than the first maximum intensity and higher than the first minimum intensity and the second minimum intensity.

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