A low power consumption and high performance radio frequency circuit

Abstract

The present invention discloses a low-power consumption and high-performance radio frequency circuit, wherein the chip U1 is signal-connected with a chip U2, the model of the chip U2 is BFP640ESD, the No. 2 pin of the chip U1 is connected to the No. 3 pin of the chip U2 through the inductor L10 and the capacitor C10, the No. 1 pin of the chip U2 is connected to the No. 3 pin of the chip U5 through the capacitor C13 and the inductor L4, the No. 1 and No. 3 pins of the chip U2 are connected with the inductor L9, the resistor R2, the resistor R3 and the inductor L6, the inductor L6 is grounded through the capacitor C11, the capacitor C11 is connected in parallel with the capacitor C22, the inductor L9 is connected through the capacitor C16, the capacitor C16 is connected with the capacitor C3, the resistor R2 and the resistor R3 are connected to a 2.5V power supply through the resistor R1. The present invention has the advantages of improving the signal-to-noise ratio of the micro-power wireless communication receiver, thereby improving the transmission distance and meeting the transmission rate, and only increasing the power consumption of the system by a very small amount.

Description

Technical Field

[0001] The present invention relates to the technical field of radio frequency circuits, and in particular to a low-power consumption and high-performance radio frequency circuit. Background Art

[0002] In recent years, the application of wireless communication technology has developed rapidly, especially micro-power wireless data communication technology has provided a large number of communication channels for the collection of IoT information data. However, in actual engineering applications, due to the strict restrictions on the use of micro-power wireless data communication, such as limited transmission power, limited transmission bandwidth, limited working duty cycle, etc., the transmission distance is short and the communication rate is low. It cannot fully meet the use requirements.

[0003] There are many ways to improve the basic technical performance of micro-power wireless data communication, such as adding an integrated low-noise amplifier to the front end of the wireless receiver to improve the receiving sensitivity or using a spread spectrum method to increase the communication distance. The use of integrated low-noise amplifier technology to improve micro-power wireless data communication has limited effect in actual engineering applications. The reason is that an integrated low-noise amplifier is used, and the amplifier has a wide operating frequency band, so the noise coefficient is usually large (1.5-2 or some up to 3). The amplifier amplifies the signal while the noise is also amplified. This low-noise amplifier has a low signal-to-noise ratio SNR and a low amplification gain (usually around 10-14db), and the effect is not very good in actual application. Although the use of micro-power wireless spread spectrum communication distance can greatly increase the communication distance, due to the limited bandwidth of micro-power wireless communication, the result of spread spectrum is a significant reduction in communication rate. For example, when the spread factor of LORA spread spectrum technology reaches 12, its rate is only tens to hundreds of bps. When a certain amount of data signals need to be transmitted, it takes a long time to complete the data transmission. In some low-power application scenarios, if the transmission time is long, it means high power consumption, and the life of the entire system will be affected. For example, centralized meter reading applications such as water meters and gas meters require both long-distance point-to-point communication and extremely low system power consumption due to battery power supply. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a low-power high-performance radio frequency circuit that improves the signal-to-noise ratio of a micro-power wireless communication receiver, thereby increasing the transmission distance and meeting the transmission rate, while only adding minimal power consumption to the system.

[0005] In order to solve the above technical problems, the technical solution provided by the present invention is: a low-power and high-performance radio frequency circuit, including chips U1 and U5, the model of the chip U1 is SI4463, the model of the chip U5 is UPG2214, a resistor R200 is connected between the No. 1 and No. 21 pins of the chip U1, the No. 3 pin of the chip U1 is connected to the capacitor C10 through the capacitor C12, the No. 4 pin of the chip U1 is connected to the No. 1 pin of the chip U5 through the inductor L7, the capacitor C6, the inductor L5, the inductor L3 and the capacitor C1 The chip U1 is connected to the ground through the capacitor C206, the chip U1 is connected to the ground through the capacitor C207, the chip U1 is connected to the general input and output through the resistor R201, the chip U1 is connected to the general input and output through the resistor R201, the chip U1 is connected to the general input and output through the capacitor C17, the chip U1 is connected to the crystal oscillator Y1 through the capacitor C17, the chip U1 is connected to the crystal oscillator Y1 through the capacitor C18, the chip U1 is connected to the crystal oscillator Y1 through the capacitor C19, the crystal oscillator Y1 through the capacitor C208, the crystal oscillator Y1 through the capacitor C210, the crystal oscillator Y1 through the capacitor C211, the crystal oscillator Y1 through the capacitor C212, the crystal oscillator Y1 through the capacitor C213, the crystal oscillator Y1 through the capacitor C214, the crystal oscillator Y1 through the capacitor C215, the crystal oscillator Y1 through the capacitor C216, the crystal oscillator Y1 through the capacitor C217, the crystal oscillator Y1 through the capacitor C218, the crystal oscillator Y1 through the capacitor C219, the crystal oscillator Y1 through the capacitor C219, the crystal oscillator Y1 through the capacitor C219, the crystal oscillator Y1 through the capacitor C211, the crystal oscillator Y1 through the capacitor C212, the crystal oscillator Y1 through the capacitor C213, the crystal oscillator Y1 through the capacitor C214, the crystal oscillator Y1 through the capacitor C215, the crystal oscillator Y1 through the capacitor C216, the crystal oscillator Y1 through the capacitor C216, the crystal oscillator Y1 The pin is connected to the 4th pin of the crystal oscillator Y1 through the capacitor C18, the 19th pin of the chip U1 is connected to the general input and output through the resistor R202, the 20th pin of the chip U1 is connected to the general input and output, the 4th and 6th pins of the chip U5 are connected to the general input and output, the 5th pin of the chip U5 is connected in series with the capacitor C14 and the inductor L2, the signal on the chip U1 is connected to the chip U2, the model of the chip U2 is BFP640ESD, the 2nd pin of the chip U1 is connected to the general input and output through the inductor L10 and the inductor L2 ...2nd pin of the chip U1 is connected to the general input and output through the resistor R202, the 2nd pin of the chip U1 is connected to the general input and output through the resistor R202, the 2nd pin of the chip U1 is connected to the general input and output through the resistor R202, the 2nd pin of the chip U1 is connected to the general input and output through the resistor R202, the 2nd pin of the chip U1 is connected to the general input and output through the resistor R202, the 2nd pin of the chip U1 is connected to the general input and output through the resistor R202, the 2nd pin of the chip U1 is connected to the general input and output through the resistor R202, the 2nd pin of the chip U1 is connected to the general input and output through the resistor Capacitor C10 is connected to pin No. 3 of chip U2, pin No. 1 of chip U2 is connected to pin No. 3 of chip U5 through capacitor C13 and inductor L4, inductor L9, resistor R2, resistor R3 and inductor L6 are connected between pins 1 and 3 of chip U2, inductor L6 is grounded through capacitor C11, capacitor C22 is connected in parallel to capacitor C11, inductor L9 is grounded through capacitor C16, capacitor C16 is connected to capacitor C3, resistors R2 and R3 are connected to a 2.5V power supply through resistor R1.

[0006] As an improvement, the No. 6 and No. 8 pins of the chip U1 are connected in series with capacitors C211, C212, C213 and C214, one end of the capacitors C211, C212, C213 and C214 are connected to the power supply and the other end is grounded.

[0007] As an improvement, the capacitor C18 is connected to a 2.5V power supply.

[0008] As an improvement, an inductor L1 is connected between pins 2 and 3 of the chip U1 , the inductor L1 is connected in parallel with the inductor L10 , and the inductor L1 is grounded via a capacitor C18 .

[0009] As an improvement, pin 4 of the chip U1 is connected to a 3.3V power supply via an inductor L8, and the inductor L8 is grounded via a capacitor C19.

[0010] As an improvement, pins 2 and 4 of the chip U2 are grounded.

[0011] As an improvement, pins 4 and 6 of the chip U5 are grounded via capacitors C20 and C7 respectively.

[0012] As an improvement, two ends of the inductor L2 are grounded via capacitors C2 and C5 respectively.

[0013] The advantages of the present invention compared with the prior art are: the low-power and high-performance RF circuit is composed of an RF dual-body transistor and an inductor, a capacitor, and a resistor, wherein the RF dual transistor U2 is an RF dual transistor U2 with very low noise and high amplification factor. The circuit structure diagram shows that the peripheral circuit is adjusted by the internal resistance characteristics of the RF dual transistor U2 to make it work in a low-noise and high-gain stage. The three resistors R1, R2, and R3 and the internal resistance of the RF dual transistor U2 form a static operating point. L9, L4, C13 and the internal load impedance of the RF dual transistor U2 are transformed with the peripheral input impedance, and the dynamic operating range of the RF dual transistor U2 is also adjusted. L6 is the output load inductor, and L6 and the internal load impedance of the transistor are transformed with the peripheral output impedance. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 The circuit schematic diagram of a low-power and high-performance radio frequency circuit of the present invention. DETAILED DESCRIPTION

[0015] The present invention is further described in detail below in conjunction with the accompanying drawings.

[0016] Combined with Figure 1 The chip U1 is signal-connected with chip U2, the model of chip U2 is BFP640ESD, pin 2 of chip U1 is connected to pin 3 of chip U2 through inductor L10 and capacitor C10, pin 1 of chip U2 is connected to pin 3 of chip U5 through capacitor C13 and inductor L4, inductor L9, resistor R2, resistor R3 and inductor L6 are connected between pins 1 and 3 of chip U2, inductor L6 is grounded through capacitor C11, capacitor C22 is connected in parallel to capacitor C11, inductor L9 is grounded through capacitor C16, capacitor C16 is connected to capacitor C3, resistors R2 and R3 are connected to a 2.5V power supply through resistor R1.

[0017] It is composed of RF dual transistors, inductors, capacitors, and resistors, among which RF dual transistor U2 is a RF dual transistor U2 with very low noise and high amplification. The circuit structure diagram shows that the peripheral circuit is adjusted by the internal resistance characteristics of RF dual transistor U2 to make it work in the low noise and high gain stage. The three resistors R1, R2, and R3 and the internal resistance of RF dual transistor U2 form a static working point. L9, L4, C13 and the load impedance inside RF dual transistor U2 transform the input impedance with the periphery, and also adjust the dynamic working range of RF dual transistor U2. L6 is the output load inductor, and L6 and the load impedance inside the triode transform the output impedance with the periphery. It not only improves the signal-to-noise ratio of the micro-power wireless communication receiver, thereby increasing the transmission distance and meeting the transmission rate, but also only increases the power consumption of the system by a very small amount.

[0018] The present invention and its implementation methods are described, and such description is not restrictive. The drawings show only one implementation method of the present invention, and the actual structure is not limited thereto. In short, if ordinary technicians in the field are inspired by it and design structural methods and embodiments similar to the technical solution without creativity without departing from the purpose of the invention, they should all fall within the protection scope of the present invention.

Claims

1. A low-power, high-performance radio frequency circuit, comprising chips U1 and U5, wherein the model of the chip U1 is SI4463, the model of the chip U5 is UPG2214, a resistor R200 is connected between the No. 1 and No. 21 pins of the chip U1, the No. 3 pin of the chip U1 is connected to the capacitor C10 via the capacitor C12, the No. 4 pin of the chip U1 is connected to the No. 1 pin of the chip U5 via the inductor L7, the capacitor C6, the inductor L5, the inductor L3 and the capacitor C1, the No. 5 pin of the chip U1 is grounded, the No. 6 pin of the chip U1 is grounded via the capacitor C206, the No. 8 pin of the chip U1 is grounded via the capacitor C207, the No. 9 pin of the chip U1 is grounded via the capacitor C208, the No. 10 pin of the chip U1 is grounded via the capacitor C209, the No. 11 pin of the chip U1 is grounded via the capacitor C20A, the No. 12 pin of the chip U1 is grounded via the capacitor C20A, the No. 13 pin of the chip U1 is grounded via the capacitor C20B, the No. 14 pin of the chip U1 is grounded via the capacitor C20C, the No. 15 pin of the chip U1 is grounded via the capacitor C20D, the No. 16 pin of the chip U1 is grounded via the capacitor C20D, the No. 17 pin of the chip U1 is grounded via the capacitor C20A, the No. 18 pin of the chip U1 is grounded via the capacitor C20B, the No. 19 pin of the chip U1 is grounded via the capacitor C20C, the No. 20 pin of the chip U1 is grounded via the capacitor C20D, the No. 21 pin of the chip U1 is The resistor R201 is connected to the general input and output, the pin 10 of the chip U1 is connected to the general input and output, the pin 17 of the chip U1 is connected to the pin 3 of the crystal oscillator Y1 through the capacitor C17, the pin 18 of the chip U1 is connected to the pins 1 and 2 of the crystal oscillator Y1, the pin 1 of the crystal oscillator Y1 is connected to the pin 4 of the crystal oscillator Y1 through the capacitor C18, the pin 19 of the chip U1 is connected to the general input and output through the resistor R202, the pin 20 of the chip U1 is connected to the general input and output, the pins 4 and 6 of the chip U5 are connected to the general input and output, and the pin 5 of the chip U5 is connected in series with the capacitor C14 and the inductor L2, characterized in that: The chip U1 is signal-connected to chip U2, and the model of chip U2 is BFP640ESD. Pin 2 of chip U1 is connected to pin 3 of chip U2 through inductor L10 and capacitor C10. Pin 1 of chip U2 is connected to pin 3 of chip U5 through capacitor C13 and inductor L4. Inductor L9, resistor R2, resistor R3 and inductor L6 are connected between pins 1 and 3 of chip U2. Inductor L6 is grounded through capacitor C11. Capacitor C22 is connected in parallel to capacitor C11. Inductor L9 is grounded through capacitor C16. Capacitor C16 is connected to capacitor C3. Resistors R2 and R3 are connected to a 2.5V power supply through resistor R1.

2. A low-power, high-performance radio frequency circuit according to claim 1, characterized in that: Pins 6 and 8 of the chip U1 are connected in series with capacitors C211, C212, C213 and C214, one end of each of which is connected to a power source, and the other end is grounded.

3. The low-power, high-performance radio frequency circuit according to claim 1, characterized in that: The capacitor C18 is connected to a 2.5V power supply.

4. The low-power, high-performance radio frequency circuit according to claim 1, characterized in that: An inductor L1 is connected between pins 2 and 3 of the chip U1 . The inductor L1 is connected in parallel with the inductor L10 . The inductor L1 is grounded via a capacitor C18 .

5. The low-power, high-performance radio frequency circuit according to claim 1, characterized in that: Pin No. 4 of the chip U1 is connected to a 3.3V power supply via an inductor L8, and the inductor L8 is grounded via a capacitor C19.

6. The low-power, high-performance radio frequency circuit according to claim 1, characterized in that: Pins 2 and 4 of the chip U2 are grounded.

7. The low-power, high-performance radio frequency circuit according to claim 1, characterized in that: Pins 4 and 6 of the chip U5 are grounded via capacitors C20 and C7 respectively.

8. The low-power, high-performance radio frequency circuit according to claim 1, characterized in that: The two ends of the inductor L2 are grounded through capacitors C2 and C5 respectively.

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