Standard sample setting method, device, terminal equipment and standard sample

Abstract

The present application is applicable to the field of microelectronics metrology technology, and provides a method, device, terminal equipment and standard sample value setting. The method includes: obtaining a characteristic image of a prepared standard sample; wherein the standard sample is a wafer etched with multiple hollow columnar structures, and the characteristic image includes a bottom surface image corresponding to the hollow columnar structure; establishing a rectangular coordinate system on the characteristic image, determining the contour point coordinates of the bottom surface image, and determining the center coordinates and radius of the bottom surface image according to the contour point coordinates; selecting multiple fixed value areas on the characteristic image, and determining the average radius of each fixed value area according to the number and radius of the bottom surface images in each fixed value area, and determining the standard particle size of the standard sample according to the average radius. The present application can accurately determine the standard particle size of the standard sample, so that the standard sample can be used for the effective calibration of the wafer surface particle size detector.

Description

Technical Field

[0001] The present application relates to the field of microelectronic metrology technology, and in particular to a standard sample value determination method, device, terminal equipment and standard sample. Background Art

[0002] The common goal pursued by the semiconductor industry is to develop components with smaller size, lower energy consumption and higher performance, which requires higher chip integration and higher wafer surface cleanliness.

[0003] The wafer surface particle size detector is a common instrument for measuring wafer surface particles. It can detect the distribution of particles on the wafer surface. The wafer surface particle size detector needs to be calibrated regularly to ensure its detection accuracy.

[0004] However, the standard samples currently used for calibrating wafer surface particle size detectors are mainly foreign standard samples. There is a lack of standard samples and standard sample setting methods for calibrating wafer surface particle size detectors in China. Therefore, there is an urgent need for a standard sample and a standard sample setting method for the calibration of wafer surface particle size detectors to improve the detection accuracy of wafer surface particle size detectors. Summary of the invention

[0005] In order to overcome the problems existing in the related art, the embodiments of the present application provide a standard sample setting method, device, terminal equipment and standard sample.

[0006] This application is implemented through the following technical solutions:

[0007] In a first aspect, an embodiment of the present application provides a standard sample value determination method, including:

[0008] Acquire a characteristic image of the prepared standard sample; wherein the standard sample is a wafer etched with a plurality of hollow columnar structures, and the characteristic image includes a bottom surface image corresponding to the hollow columnar structure;

[0009] A rectangular coordinate system is established on the feature image to determine the coordinates of the contour points of the bottom surface image, and the coordinates of the center of the circle and the radius of the bottom surface image are determined according to the coordinates of the contour points;

[0010] Select multiple fixed value areas on the feature image, determine the average radius of each fixed value area according to the number and radius of the bottom surface images in each fixed value area, and determine the standard particle size of the standard sample according to the average radius; wherein the bottom surface image in each fixed value area is determined based on the frame coordinates of each fixed value area and the center coordinates of the bottom surface image.

[0011] In a possible implementation of the first aspect, a rectangular coordinate system is established on the feature image, the coordinates of the contour points of the bottom surface image are determined, and the coordinates of the center of the circle and the radius of the bottom surface image are determined according to the coordinates of the contour points, including:

[0012] Establish a rectangular coordinate system on the feature image;

[0013] Determine the coordinates of the contour points of the bottom surface image according to the contour of the bottom surface image in the feature image, and the number of the contour point coordinates is at least three;

[0014] According to the coordinates of the contour points and the conversion formula, the center coordinates and radius of the bottom surface image are determined respectively;

[0015] Repeat the above steps until the center coordinates and radius of all bottom surface images on the feature image are determined.

[0016] In a possible implementation of the first aspect, determining the coordinates of contour points of the bottom surface image according to the contour of the bottom surface image in the feature image includes:

[0017] Contour points are selected according to the contour of the bottom surface image in the feature image, and the coordinates of the contour points of the bottom surface image are determined according to the contour points and the rectangular coordinate system. The number of contour points is at least three.

[0018] In a possible implementation of the first aspect, the coordinates of the contour point and the coordinates of the center of the bottom surface image and the radius satisfy the minimum value of the first formula;

[0019] The first formula is:

[0020] f(c,d,e)=(X i -a) 2 +(Y i -b) 2 -r 2

[0021] =X i 2 +Y i 2 +cX i +dY i +e

[0022] Where f(c, d, e) is the difference between the square of the distance from the contour point coordinates to the center coordinates of the bottom image and the square of the radius of the bottom image, (X i ,Y i ) is the coordinate of the i-th contour point, (a, b) is the coordinate of the center of the bottom image, r is the radius of the bottom image, where c = -2a, d = -2b, e = a 2 +b 2 -r 2 ;

[0023] Perform partial differential calculation on f(c, d, e) and obtain the conversion formula:

[0024]

[0025]

[0026] C=N∑X i 2 -∑X i ∑X i

[0027] D=N∑X i Y i -∑X i ∑Y i

[0028] E=N∑X i 3 -∑X i Y i 2 -∑(X i 2 + i 2 )∑X i

[0029] F=N∑Y i 2 -∑Y i ∑Y i

[0030] G=N∑Y i 3 -N∑X i 2 Y i -∑(X i 2 +Y i 2 )∑Y i

[0031] Where N is the number of contour point coordinates.

[0032] In a possible implementation of the first aspect, the coordinate formula of the center of the bottom image is:

[0033]

[0034]

[0035] The radius formula of the bottom image is:

[0036]

[0037] In the formula,

[0038] In a possible implementation of the first aspect, a plurality of fixed value areas are selected on the characteristic image, an average radius of each fixed value area is determined according to the number and radius of the bottom surface images in each fixed value area, and a standard particle size of the standard sample is determined according to the average radius, including:

[0039] Selecting multiple fixed-value areas on the feature image, and determining the bottom surface image and the number of bottom surface images in each fixed-value area according to the frame coordinates of each fixed-value area and the center coordinates of the bottom surface image;

[0040] The average radius of the fixed value area is:

[0041]

[0042]

[0043] In the formula, K m is the number of bottom images in the mth fixed value area, r m is the average radius of the mth fixed value area, r k is the radius of the kth bottom surface image in the mth fixed value area;

[0044] The standard particle size of the standard sample is:

[0045]

[0046] Where D is the standard particle size of the standard sample, and M is the number of fixed value areas.

[0047] In a second aspect, an embodiment of the present application provides a standard sample setting device, comprising:

[0048] An acquisition module is used to acquire a characteristic image of the prepared standard sample; wherein the standard sample is a wafer etched with a plurality of hollow columnar structures, and the characteristic image includes a bottom surface image corresponding to the hollow columnar structure;

[0049] A determination module is used to establish a rectangular coordinate system on the feature image, determine the coordinates of the contour points of the bottom surface image, and determine the coordinates of the center of the circle and the radius of the bottom surface image according to the coordinates of the contour points;

[0050] The fixed value module is used to select multiple fixed value areas on the feature image, determine the average radius of each fixed value area according to the number and radius of the bottom surface images in each fixed value area, and determine the standard particle size of the standard sample according to the average radius; wherein the bottom surface image in each fixed value area is determined based on the frame coordinates of each fixed value area and the center coordinates of the bottom surface image.

[0051] In a third aspect, an embodiment of the present application provides a terminal device, comprising a memory and a processor, wherein the memory stores a computer program that can be executed on the processor, and when the processor executes the computer program, it implements the standard sample setting method as described in any one of the first aspects.

[0052] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the standard sample setting method as described in any one of the first aspects is implemented.

[0053] In a fifth aspect, an embodiment of the present application provides a computer program product, which, when executed on a terminal device, enables the terminal device to execute the standard sample setting method described in any one of the above-mentioned first aspects.

[0054] In a sixth aspect, an embodiment of the present application provides a standard template, wherein the standard template is a wafer etched with a plurality of hollow columnar structures;

[0055] The standard sample is prepared by semiconductor technology;

[0056] The standard sample adopts the standard sample determination method as described in any one of the first aspects to determine the standard particle size.

[0057] It can be understood that the beneficial effects of the second to sixth aspects mentioned above can be found in the relevant description of the first aspect mentioned above, and will not be repeated here.

[0058] The standard sample value setting method, device, terminal equipment and standard sample provided in the embodiments of the present application are obtained by obtaining a characteristic image of the prepared standard sample, wherein the standard sample is a wafer etched with multiple hollow columnar structures, and the characteristic image includes a bottom surface image corresponding to the hollow columnar structure. A rectangular coordinate system is established on the characteristic image, and the contour point coordinates of the bottom surface image are determined. The center coordinates and radius of the bottom surface image are determined according to the contour point coordinates. Multiple fixed value areas on the characteristic image are selected, and the average radius of each fixed value area is determined according to the number and radius of the bottom surface images in each fixed value area. The standard particle size of the standard sample is determined according to the average radius, wherein the bottom surface image in each fixed value area is determined based on the frame coordinates of each fixed value area and the center coordinates of the bottom surface image, so that the standard particle size of the standard sample can be accurately determined, so that the standard sample can be used for accurate and effective calibration of a wafer surface particle size detector.

[0059] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0061] Figure 1 It is a flow chart of a standard sample setting method provided in an embodiment of the present application;

[0062] Figure 2 A schematic diagram of a local feature image of a standard template provided in an embodiment of the present application;

[0063] Figure 3 It is a flow chart of a standard sample setting method provided in an embodiment of the present application;

[0064] Figure 4 is a schematic diagram of multiple fixed value areas provided in one embodiment of the present application;

[0065] Figure 5 It is a structural schematic diagram of a standard sample setting device provided in one embodiment of the present application;

[0066] Figure 6 is a schematic diagram of the structure of a terminal device provided in an embodiment of the present application;

[0067] Figure 7 It is a structural schematic diagram of a standard template provided in an embodiment of the present application;

[0068] Figure 8 It is a schematic diagram of the structure of a standard template provided in one embodiment of the present application. DETAILED DESCRIPTION

[0069] The present application is described more clearly below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the effects of the present application, but are not intended to limit the present application in any form. It should be noted that, for those of ordinary skill in the art, several variations and improvements may be made without departing from the concept of the present application. These all fall within the scope of protection of the present application.

[0070] It should be understood that when used in the present specification and the appended claims, the term "comprising" indicates the presence of described features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0071] It should also be understood that the term “and / or” used in the specification and appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0072] In the description of the present application specification and the appended claims, the terms "first", "second", "third", etc. are only used to distinguish the descriptions and cannot be understood as indicating or implying relative importance.

[0073] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that one or more embodiments of the present application include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the statements "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0074] In addition, the “plurality” mentioned in the embodiments of the present application should be interpreted as two or more.

[0075] The common goal pursued by the semiconductor industry is to develop smaller, lower energy-consuming, and higher-performance components, which requires higher chip integration and higher wafer surface cleanliness. "Particles" such as organic matter, metals, and adsorbed molecules on the wafer surface can cause problems such as reduced wafer yield, performance degradation, and increased energy consumption. For example, particles on the wafer surface can affect wiring integrity, leading to low yields. Wafer surface particle size detectors are commonly used instruments for measuring wafer surface particles, which can detect the distribution of particles on the wafer surface. However, the detection accuracy of wafer surface particle size detectors will decrease with the increase of usage time, so the wafer surface particle size detector needs to be calibrated regularly to ensure its detection accuracy.

[0076] At present, the standard samples used for calibrating wafer surface particle size detectors are mainly foreign standard samples. There is a lack of standard samples and standard sample setting methods for calibrating wafer surface particle size detectors in China. Therefore, there is an urgent need for a standard sample and a standard sample setting method for the calibration of wafer surface particle size detectors to improve the detection accuracy of wafer surface particle size detectors.

[0077] Based on the above problems, the standard sample setting method in the embodiment of the present application obtains the characteristic image of the prepared standard sample, the above-mentioned standard sample is a wafer etched with multiple hollow columnar structures, the characteristic image includes a bottom image corresponding to the hollow columnar structure, and a rectangular coordinate system is established on the characteristic image to determine the contour point coordinates of the bottom image, and the center coordinates and radius of the bottom image are determined according to the contour point coordinates, and multiple fixed value areas on the characteristic image are selected, and the average radius of each fixed value area is determined according to the number and radius of the bottom image in each fixed value area, and the standard particle size of the standard sample is determined according to the average radius. The standard particle size of the standard sample can be accurately determined, so that the standard sample after setting can be used for effective calibration of the wafer surface particle size detector.

[0078] Figure 1 1 is a flow chart of a standard sample setting method provided in an embodiment of the present application. Figure 1 As shown, the method in the embodiment of the present application may include:

[0079] Step 101: Acquire a characteristic image of the prepared standard sample.

[0080] Among them, the standard sample is a wafer etched with multiple hollow columnar structures, and the characteristic image includes the bottom surface image corresponding to the above hollow columnar structures.

[0081] Optionally, the characteristic image of the standard sample can be obtained by scanning the standard sample with a scanning electron microscope. The characteristic image includes the bottom surface images corresponding to all hollow columnar structures, that is, the bottom surface image has the same shape and size as the bottom surface of the hollow columnar structure. The bottom surface image is a circular image or a nearly circular image.

[0082] Figure 2 A schematic diagram of a local feature image of a standard template provided in one embodiment of the present application.

[0083] Step 102: Establish a rectangular coordinate system on the feature image, determine the coordinates of the contour points of the bottom surface image, and determine the coordinates of the center of the circle and the radius of the bottom surface image according to the coordinates of the contour points.

[0084] In one possible implementation, see Figure 3 In step 102, the following may be specifically included:

[0085] Step 1021: Establish a rectangular coordinate system on the feature image.

[0086] Optionally, a rectangular coordinate system may be established with any point on the feature image as the origin, any straight line passing through the origin as the x-axis, and a straight line passing through the origin and perpendicular to the x-axis as the y-axis.

[0087] Step 1022: Determine the coordinates of the contour points of the bottom surface image according to the contour of the bottom surface image in the feature image.

[0088] Optionally, executing step 1022 may specifically include: selecting contour points according to the contour of the bottom surface image in the feature image, and determining the coordinates of the contour points of the bottom surface image according to the contour points and a rectangular coordinate system.

[0089] Optionally, the number of the above-mentioned contour points is at least three, and correspondingly, the number of the contour point coordinates is at least three.

[0090] Exemplarily, the contour points are located on the contour of the bottom surface image, and the coordinates of the contour points can be determined according to a rectangular coordinate system, that is, the coordinates of the contour points are determined.

[0091] Step 1023: Determine the center coordinates and radius of the bottom surface image according to the contour point coordinates and the conversion formula.

[0092] Optionally, let the coordinates of the center of any bottom image on the feature image be (a, b), and set the radius of the bottom image to r, then the equation of the fitted circle of the bottom image is:

[0093] (x) 2 +(yb) 2 =r 2

[0094] The above formula can be converted to:

[0095] x 2 +y 2 +cx+dy+e=0

[0096] In the formula, c = -2a, d = -2b, e = a 2 +b 2 -r 2 .

[0097] Optionally, set the coordinates of the i-th contour point of the bottom image to (X i ,Y i ), then the value of the contour point coordinates makes the difference between the square of the distance between the contour point coordinates and the center coordinates of the bottom surface image and the square of the radius of the bottom surface image minimum. The first formula is:

[0098] f(c,d,e)=(X i -a) 2 +(Y i -b) 2 -r 2

[0099] =X i 2 +Y i 2 +cX i +dY i +e

[0100] Where f(c, d, e) is the difference between the square of the distance from the contour point coordinates to the center coordinates of the bottom image and the square of the radius of the bottom image.

[0101] It should be noted that, because the bottom image is a circular image or a nearly circular image, the contour of the bottom image does not necessarily satisfy the equation of the fitted circle of the bottom image, that is, the difference between the square of the distance from the contour point coordinates to the center coordinates of the bottom image and the square of the radius of the bottom image is not necessarily equal to 0, so it is necessary to calculate the minimum value of the first formula, that is, to perform partial differential calculation on f(c, d, e):

[0102]

[0103] After solving, we get the conversion formula:

[0104]

[0105]

[0106] C=N∑X i 2 -∑X i ∑X i

[0107] D=N∑X i Y i -∑X i ∑Y i

[0108] E=N∑X i 3 -N∑X i Y i 2 -∑(X i 2 +Y i 2 )∑X i

[0109] F=N∑Y i 2 -∑Y i ∑Y i

[0110] G=N∑Y i 3 -N∑X i 2 Y i -∑(X i 2 + i 2 )∑Y i

[0111] Where N is the number of contour point coordinates.

[0112] According to the above conversion formula and the coordinates of the contour points, the center coordinates and radius of the bottom surface image can be determined, where the center coordinate formula of the bottom surface image is:

[0113]

[0114]

[0115] The radius formula of the bottom image is:

[0116]

[0117] In the formula,

[0118] Step 1024, repeat steps 1022 to 1023 until the center coordinates and radius of all bottom surface images on the feature image are determined.

[0119] Optionally, after establishing a rectangular coordinate system on the feature image, steps 1022 to 1023 are executed for all bottom surface images, that is, the contour point coordinates of the current bottom surface image are determined according to the contour of the current bottom surface image, the center coordinates and radius of the current bottom surface image are respectively determined according to the current contour point coordinates and a conversion formula, and then the contour point coordinates of the next bottom surface image are determined according to the contour of the next bottom surface image, and the center coordinates and radius of the next bottom surface image are respectively determined according to the next contour point coordinates and a conversion formula, until the center coordinates and radius of all bottom surface images are determined.

[0120] Step 103, select multiple fixed value areas on the feature image, determine the average radius of each fixed value area according to the number and radius of the bottom surface images in each fixed value area, and determine the standard particle size of the standard sample according to the average radius.

[0121] In a possible implementation, multiple fixed value areas are selected on the feature image, and the bottom image and the number of bottom images in each fixed value area are determined according to the frame coordinates of each fixed value area and the center coordinates of the bottom image.

[0122] Optionally, the fixed value area may be in a square, circular or other shape, which is not specifically limited herein. The fixed value area needs to include a plurality of bottom surface images. The number of the fixed value areas is at least two, and the more the number of fixed value areas, the higher the accuracy of the standard particle size of the standard sample obtained by subsequent calculation.

[0123] Exemplarily, the above-mentioned multiple fixed value areas can be randomly selected on the feature image, or can be selected on the feature image according to a certain rule. For example, a fixed value area is respectively selected from the top, bottom, left, right and middle parts of the feature image to obtain five fixed value areas.

[0124] Figure 4 Schematic diagram of multiple fixed value areas provided in one embodiment of the present application. Figure 4 As shown, a fixed value region is selected from the upper, lower, left, right and middle parts of the feature image respectively, and five fixed value regions are determined.

[0125] Optionally, the frame coordinates of the fixed value area are determined, and the above frame coordinates are multiple and are used to indicate the frame of the fixed value area. The bottom image and the number of bottom images in each fixed value area are determined based on the above frame coordinates and the center coordinates of the bottom image. For example, if the center coordinates of the bottom image are located within the frame indicated by the frame coordinates of a certain fixed value area, it is determined that the bottom image is located within the fixed value area. The average radius of each fixed value area is determined based on the number and radius of the bottom images in each fixed value area. The average radius of the fixed value area is:

[0126]

[0127] After transforming the above formula, we get:

[0128]

[0129] In the formula, K m is the number of bottom images in the mth fixed value area, r m is the average radius of the mth fixed value area, r k is the radius of the kth bottom image in the mth fixed value area.

[0130] After determining the average radius of each fixed value area, the standard particle size of the standard sample is determined based on the above multiple average radii. The standard particle size of the standard sample is:

[0131]

[0132] Where D is the standard particle size of the standard sample, and M is the number of fixed value areas.

[0133] The embodiment of the present application obtains a characteristic image of a prepared standard sample, wherein the standard sample is a wafer etched with multiple hollow columnar structures, and the characteristic image includes a bottom surface image corresponding to the hollow columnar structure. A rectangular coordinate system is established on the characteristic image, and the contour point coordinates of the bottom surface image are determined. The center coordinates and the radius of the bottom surface image are determined according to the contour point coordinates. Multiple fixed value areas on the characteristic image are selected, and the average radius of each fixed value area is determined according to the number and radius of the bottom surface images in each fixed value area. The standard particle size of the standard sample is determined according to the average radius. The standard particle size of the standard sample can be accurately determined, so that the standard sample can be used for accurate and effective calibration of a wafer surface particle size detector.

[0134] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0135] Figure 5 Schematic diagram of the structure of the standard sample setting device provided in one embodiment of the present application. Figure 5 As shown, the standard sample setting device provided in this embodiment may include: an acquisition module 201, a determination module 202 and a setting module 203.

[0136] The acquisition module 201 is used to acquire a characteristic image of the prepared standard sample; wherein the standard sample is a wafer etched with a plurality of hollow columnar structures, and the characteristic image includes a bottom surface image corresponding to the hollow columnar structure.

[0137] The determination module 202 is used to establish a rectangular coordinate system on the feature image, determine the coordinates of the contour points of the bottom surface image, and determine the coordinates of the center of the circle and the radius of the bottom surface image according to the coordinates of the contour points.

[0138] The fixed value module 203 is used to select multiple fixed value areas on the feature image, determine the average radius of each fixed value area according to the number and radius of the bottom surface images in each fixed value area, and determine the standard particle size of the standard sample according to the average radius. The bottom surface images in each fixed value area are determined based on the frame coordinates of each fixed value area and the center coordinates of the bottom surface image.

[0139] Optionally, the determination module 202 is specifically used to: establish a rectangular coordinate system on the feature image; determine the contour point coordinates of the bottom surface image according to the contour of the bottom surface image in the feature image, and the contour point coordinates are at least three; determine the center coordinates and radius of the bottom surface image according to the contour point coordinates and the conversion formula; repeat the above steps until the center coordinates and radius of all bottom surface images on the feature image are determined.

[0140] Optionally, the determination module 202 is further specifically configured to: select contour points according to the contour of the bottom surface image in the feature image, and determine the coordinates of the contour points of the bottom surface image according to the contour points and a rectangular coordinate system, wherein the number of contour points is at least three.

[0141] Optionally, the fixed value module 203 is specifically used to: select multiple fixed value areas on the feature image, and determine the bottom image and the number of bottom images in each fixed value area according to the frame coordinates of each fixed value area and the center coordinates of the bottom image.

[0142] The average radius of the fixed value area is:

[0143]

[0144]

[0145] In the formula, K m is the number of bottom images in the mth fixed value area, r m is the average radius of the mth fixed value area, r k is the radius of the kth bottom image in the mth fixed value area.

[0146] The standard particle size of the standard sample is:

[0147]

[0148] Where D is the standard particle size of the standard sample, and M is the number of fixed value areas.

[0149] It should be noted that the information interaction, execution process, etc. between the above-mentioned devices / units are based on the same concept as the method embodiment of the present application. Their specific functions and technical effects can be found in the method embodiment part and will not be repeated here.

[0150] Figure 6 Schematic diagram of the structure of a terminal device provided by an embodiment of the present application. Figure 6 As shown, the terminal device 300 of this embodiment includes: a processor 310 and a memory 320, wherein the memory 320 stores a computer program 321 that can be run on the processor 310. When the processor 310 executes the computer program 321, the steps in any of the above method embodiments are implemented, for example Figure 1 Alternatively, when the processor 310 executes the computer program 321, the functions of each module / unit in the above-mentioned device embodiments are implemented, for example Figure 5 Functions of modules 201 to 203 are shown.

[0151] Exemplarily, the computer program 321 may be divided into one or more modules, one or more modules are stored in the memory 320, and are executed by the processor 310 to complete the present application. The one or more modules may be a series of computer program instruction segments capable of completing specific functions, and the instruction segments are used to describe the execution process of the computer program 321 in the terminal device 300.

[0152] Those skilled in the art will understand that Figure 6 It is only an example of a terminal device and does not constitute a limitation on the terminal device. It may include more or fewer components than shown in the figure, or a combination of certain components, or different components, such as input and output devices, network access devices, buses, etc.

[0153] The processor 310 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or the processor may be any conventional processor, etc.

[0154] The memory 320 may be an internal storage unit of the terminal device, such as a hard disk or memory of the terminal device, or an external storage device of the terminal device, such as a plug-in hard disk, a smart memory card (SmartMedia Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (Flash Card), etc. equipped on the terminal device. The above-mentioned memory 320 may also include both an internal storage unit of the terminal device and an external storage device. The above-mentioned memory 320 is used to store computer programs and other programs and data required by the terminal device. The memory 320 may also be used to temporarily store data that has been output or is to be output.

[0155] The technicians in the relevant field can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In practical applications, the above-mentioned function allocation can be completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiment can be integrated in a processing unit, or each unit can exist physically separately, or two or more units can be integrated in one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, which will not be repeated here.

[0156] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0157] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0158] In the embodiments provided by the present invention, it should be understood that the disclosed devices / terminal equipment and methods can be implemented in other ways. For example, the device / terminal equipment embodiments described above are only schematic. For example, the division of the modules or units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0159] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0160] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0161] If the integrated module / unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the present invention implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, and the computer program can implement the steps of the above-mentioned various method embodiments when executed by the processor. . Wherein, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording medium, U disk, mobile hard disk, disk, optical disk, computer memory, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), electric carrier signal, telecommunication signal and software distribution medium, etc.

[0162] Figure 7 Schematic diagram of the structure of a standard template provided by an embodiment of the present application. Figure 7 As shown in FIG. 1 , the standard sample is a wafer etched with multiple hollow columnar structures. The standard sample adopts the standard sample value determination method to determine the standard particle size.

[0163] Optionally, the above-mentioned standard sample value determination method can be the standard sample value determination method provided in the embodiment of the present application.

[0164] Optionally, the standard sample is prepared by semiconductor technology. The specific steps of preparing the standard sample by semiconductor technology are as follows:

[0165] (1) Oxidation: Oxidizing a thin film on a wafer; wherein the wafer may be a silicon wafer.

[0166] (2) Glue coating: Fix the wafer on the stage and spray the organic solvent. After the organic solvent evaporates, evenly coat the photoresist on the surface of the wafer.

[0167] (3) Exposure and development. A light source is used to illuminate the mask plate, and the pattern on the mask plate is projected onto the photoresist on the surface of the wafer through a lens, so that the photoresist on the surface of the wafer undergoes a chemical reaction and exposure is completed; wherein the mask plate includes multiple circular patterns.

[0168] (4) Etching: Based on the pattern on the wafer surface after exposure, the wafer is etched using a combination of dry etching and wet etching.

[0169] (5) Remove the photoresist from the surface of the wafer.

[0170] The standard sample provided in the embodiment of the present application includes multiple hollow columnar structures, and the standard sample setting method provided in the embodiment of the present application is used to determine the standard particle size of the standard sample. The standard sample can be used for accurate and effective calibration of the wafer surface particle size detector.

[0171] In a possible design, the present application embodiment also provides another standard template. Figure 8 The standard sample is a wafer with multiple effective areas, and the effective areas are etched with multiple hollow columnar structures. The standard particle sizes of the hollow columnar structures in different effective areas are different, and the number can be the same or different.

[0172] Optionally, the standard sample adopts a standard sample value determination method to determine the standard particle size of each effective area. The standard sample value determination method can be the standard sample value determination method provided in the embodiment of the present application. The specific steps of using the standard sample value determination method to determine the standard particle size of each effective area of ​​the standard sample refer to the above embodiment, which will not be repeated here.

[0173] Exemplarily, the above standard sample is prepared by semiconductor technology. Specifically, each effective area in the standard sample is prepared by semiconductor technology. The specific steps refer to the above embodiment. It should be noted that in the exposure and development steps, masks with circular patterns of different particle sizes are used for different effective areas to form effective areas with different standard particle sizes.

[0174] Optionally, the shape of the effective area may be circular or square, etc., which is not specifically limited here.

[0175] The standard sample provided in the embodiment of the present application includes multiple effective areas, and the above effective areas are etched with multiple hollow columnar structures, and the standard sample value determination method provided in the embodiment of the present application is used to determine the standard particle size of each effective area of ​​the standard sample. By setting multiple effective areas with different particle sizes on the same standard sample, it is more convenient to use the standard sample to accurately and effectively calibrate the wafer surface particle size detector.

[0176] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A standard sample setting method, characterized in that: include: Acquire a characteristic image of the prepared standard sample; wherein the standard sample is a wafer etched with a plurality of hollow columnar structures, and the characteristic image includes a bottom surface image corresponding to the hollow columnar structure; Establishing a rectangular coordinate system on the feature image, determining the coordinates of the contour points of the bottom surface image, and determining the coordinates of the center of the circle and the radius of the bottom surface image according to the coordinates of the contour points; Select multiple fixed value areas on the characteristic image, determine the average radius of each fixed value area according to the number and radius of the bottom surface images in each fixed value area, and determine the standard particle size of the standard sample according to the average radius; wherein the bottom surface image in each fixed value area is determined based on the frame coordinates of each fixed value area and the center coordinates of the bottom surface image.

2. The standard sample value determination method according to claim 1, characterized in that: The step of establishing a rectangular coordinate system on the feature image, determining the coordinates of the contour points of the bottom surface image, and determining the coordinates of the center of the circle and the radius of the bottom surface image according to the coordinates of the contour points includes: Establishing a rectangular coordinate system on the feature image; Determine the coordinates of the contour points of the bottom surface image according to the contour of the bottom surface image in the feature image, wherein the number of the contour point coordinates is at least three; According to the contour point coordinates and the conversion formula, the center coordinates and the radius of the bottom surface image are determined respectively; Repeat the above steps until the center coordinates and radius of all bottom surface images on the feature image are determined.

3. The standard sample value determination method according to claim 2 is characterized in that: The step of determining the coordinates of the contour points of the bottom surface image according to the contour of the bottom surface image in the feature image comprises: Contour points are selected according to the contour of the bottom surface image in the feature image, and the coordinates of the contour points of the bottom surface image are determined according to the contour points and the rectangular coordinate system, wherein the number of the contour points is at least three.

4. The standard sample value determination method according to claim 2 is characterized in that: The coordinates of the contour points, the coordinates of the center of the bottom surface image and the radius satisfy the minimum value of the first formula; The first formula is: f(c,d,e)=(X i -a) 2 +(Y i -b) 2 -r 2 =X i 2 +Y i 2 +cX i +dY i +e Where f(c, d, e) is the difference between the square of the distance from the contour point coordinates to the center coordinates of the bottom image and the square of the radius of the bottom image, (X i ,Y i ) is the coordinate of the i-th contour point, (a, b) is the coordinate of the center of the bottom image, r is the radius of the bottom image, where c = -2a, d = -2b, e = a 2 +b 2 -r 2 ; Perform partial differential calculation on f(c, d, e) and obtain the conversion formula: C=N∑X i 2 -∑X i ∑X i D=N∑X i Y i -∑X i ∑Y i E=N∑X i 3 -N∑X i AND i 2 -∑(X i 2 +Y i 2 )∑X i F=N∑Y i 2 -∑Y i ∑Y i G=N∑Y i 3 -N∑X i 2 AND i -∑(X i 2 +Y i 2 )∑Y i Where N is the number of contour point coordinates.

5. The standard sample setting method according to claim 4 is characterized in that: The center coordinate formula of the bottom image is: The radius formula of the bottom image is: In the formula, 6. The standard sample value determination method according to any one of claims 1 to 5, characterized in that: The step of selecting a plurality of fixed value areas on the characteristic image, determining the average radius of each fixed value area according to the number and radius of the bottom surface images in each fixed value area, and determining the standard particle size of the standard sample according to the average radius includes: Selecting a plurality of fixed value areas on the characteristic image, and determining the bottom surface image and the number of bottom surface images in each fixed value area according to the frame coordinates of each fixed value area and the center coordinates of the bottom surface image; The average radius of the fixed value area is: In the formula, K m is the number of bottom images in the mth fixed value area, r m is the average radius of the mth fixed value area, r k is the radius of the kth bottom surface image in the mth fixed value area; The standard particle size of the standard sample is: Where D is the standard particle size of the standard sample, and M is the number of fixed value areas.

7. A standard sample setting device, characterized in that: include: An acquisition module, used to acquire a characteristic image of the prepared standard sample; wherein the standard sample is a wafer etched with a plurality of hollow columnar structures, and the characteristic image includes a bottom surface image corresponding to the hollow columnar structure; A determination module, used to establish a rectangular coordinate system on the feature image, determine the coordinates of the contour points of the bottom surface image, and determine the coordinates of the center of the circle and the radius of the bottom surface image according to the coordinates of the contour points; A fixed value module is used to select multiple fixed value areas on the feature image, determine the average radius of each fixed value area according to the number and radius of the bottom surface images in each fixed value area, and determine the standard particle size of the standard sample according to the average radius; wherein the bottom surface image in each fixed value area is determined based on the frame coordinates of each fixed value area and the center coordinates of the bottom surface image.

8. A terminal device, comprising a memory and a processor, wherein the memory stores a computer program that can be run on the processor, characterized in that: When the processor executes the computer program, the standard sample setting method according to any one of claims 1 to 6 is implemented.

9. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the standard sample setting method according to any one of claims 1 to 6 is implemented.

10. A standard sample, characterized in that: The standard sample is a wafer etched with multiple hollow columnar structures; The standard sample is prepared by semiconductor technology; The standard sample adopts the standard sample determination method described in any one of claims 1 to 6 to determine the standard particle size.

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