Drum ring cutting mark structure and manufacturing method thereof

Abstract

The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a taiko ring cutting mark structure and a manufacturing method thereof. The taiko ring cutting mark structure is located at a mark area at the junction of a taiko ring and a wafer main body, and comprises a substrate layer, an interlayer dielectric layer and a metal mark structure. The metal mark structure comprises a metal layer, and the metal layer is covered on the interlayer dielectric layer. The metal mark structure further comprises a plurality of mutually spaced metal contact holes, each of which is connected with the metal layer upward, and each of which penetrates into the substrate layer downward through the interlayer dielectric layer. The manufacturing method comprises the following steps: providing a wafer; etching a plurality of mutually spaced contact holes in the mark area of the wafer, each of which penetrates into the substrate layer downward through the interlayer dielectric layer of the wafer; depositing metal into the contact holes to form metal contact holes; and depositing metal so as to form a metal layer in the mark area, and the metal layer is covered on the interlayer dielectric layer.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a too drum ring cutting mark structure and a manufacturing method thereof. BACKGROUND

[0002] The too drum ring prepared by the too drum thinning process can provide support for the wafer during manufacturing and reduce wafer warping. The too drum ring needs to be removed before wafer cutting and packaging. Ring cutting is one of the main methods for removing the too drum ring. A laser beam is used to cut the junction between the too drum ring and the wafer main area, thereby generating a cutting seam at the junction. Then, the too drum ring is removed by a ring taking process.

[0003] In related technologies, a too drum ring cutting mark structure is formed at the junction between the too drum ring and the wafer main area. The too drum ring cutting mark structure is used to determine the start or end position of ring cutting. The cutting seam formed after ring cutting passes through the too drum ring cutting mark structure.

[0004] However, the too drum ring cutting mark structure is usually a metal layer adhered to a dielectric layer, and the metal layer occupies a large area, thereby being subjected to a large frictional force during ring cutting, which easily causes the metal layer to peel off the dielectric layer at the cutting seam. SUMMARY

[0005] The present application provides a too drum ring cutting mark structure and a manufacturing method thereof, which can solve the problem of the metal layer peeling off the dielectric layer at the cutting seam in related technologies.

[0006] To solve the technical problems described in the background, the first aspect of the present application provides a too drum ring cutting mark structure located at a mark area at the junction between a too drum ring and a wafer main area, comprising: a substrate layer, an interlayer dielectric layer, and a metal mark structure.

[0007] The metal mark structure comprises a metal layer covering the interlayer dielectric layer.

[0008] The metal mark structure further comprises a plurality of mutually spaced metal contact holes, each metal contact hole being connected to the metal layer upward, and each metal contact hole extending into the substrate layer downward through the interlayer dielectric layer.

[0009] Optionally, the metal layer comprises a plurality of metal segments, and two adjacent metal segments are separated by a separation channel.

[0010] Optionally, the separation channel is located in the mark area at a position between two adjacent metal contact holes.

[0011] Each of the metal segments is connected to at least one of the metal contact holes.

[0012] Optionally, the split tracks are located in the mark area where the metal contact holes are located.

[0013] Each of the metal segments is connected to at least one of the metal contact holes.

[0014] The metal contact holes located at the split track positions are connected to the junctions of two adjacent metal segments.

[0015] To solve the technical problems described in the background, the second aspect of the present application provides a manufacturing method of a taiko ring cut mark structure, which comprises the following steps:

[0016] Providing a wafer, which comprises a taiko ring and a wafer body;

[0017] Etching a plurality of mutually spaced contact holes in the mark area of the wafer, each of the contact holes penetrating into the base layer through the interlayer dielectric layer of the wafer downward; the mark area is located at the junction of the taiko ring and the wafer body;

[0018] Depositing metal into the contact holes to form metal contact holes;

[0019] Depositing metal so as to form a metal layer in the mark area, which covers the interlayer dielectric layer.

[0020] Optionally, after the step of depositing metal so as to form a metal layer in the mark area, which covers the interlayer dielectric layer, is completed, the following step is further performed:

[0021] Scribing split tracks in the mark area, which divide the metal layer into a plurality of metal segments.

[0022] Optionally, the step of scribing split tracks in the mark area, which divide the metal layer into a plurality of metal segments, comprises:

[0023] Scribing split tracks in the mark area at positions between every two adjacent metal contact holes;

[0024] So that the split tracks divide the metal layer into a plurality of metal segments, and each of the metal contact holes is connected to a metal segment upward.

[0025] Optionally, the step of scribing split tracks in the mark area, which divide the metal layer into a plurality of metal segments, comprises:

[0026] In the mark area, a separation groove is formed at a position where each metal contact hole is located;

[0027] The separation groove separates the metal layer into a plurality of metal segments, and each metal contact hole is connected to a joint between two adjacent metal segments.

[0028] The technical solution of the present application has at least the following advantages: the metal contact hole extends downward through the interlayer dielectric layer into the base layer and is connected upward to the metal layer, which can increase the pulling force on the metal layer when the metal mark structure is ring-cut, thereby reducing the probability of the metal layer peeling off from the interlayer dielectric layer during ring-cutting. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the description of the embodiments or the prior art will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0030] Figure 1 A schematic diagram of the position of the taiko ring ring-cut mark structure is shown;

[0031] Figure 2 A schematic diagram of the cross-sectional structure of the taiko ring ring-cut mark structure is shown;

[0032] Figure 3 A schematic diagram of the cross-sectional structure of another taiko ring ring-cut mark structure is shown; Figure 2 A schematic diagram of the cross-sectional structure of another taiko ring ring-cut mark structure is shown;

[0033] Figure 4 A schematic diagram of the cross-sectional structure of another taiko ring ring-cut mark structure is shown; Figure 2 A schematic diagram of the cross-sectional structure of another taiko ring ring-cut mark structure is shown;

[0034] Figure 5 A flowchart of a manufacturing method for forming the taiko ring ring-cut mark structure is shown. Figure 2 A flowchart of a manufacturing method for forming the taiko ring ring-cut mark structure is shown. DETAILED DESCRIPTION

[0035] The technical solutions in the present application will be described in detail below with reference to the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of the present application.

[0036] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0037] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements, it can be wireless connection, or it can be wired connection. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0038] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as there is no conflict.

[0039] Figure 1 The position of the taiko ring ring cutting mark structure provided by the embodiment of the present application is shown in the schematic diagram, from Figure 1 It can be seen from the above that the taiko ring ring cutting mark structure 100 is located at the mark area 102 of the junction 101 between the taiko ring and the wafer body.

[0040] Figure 2 The cross-sectional structure schematic diagram of the taiko ring ring cutting mark structure provided by an embodiment of the present application is shown, from Figure 2 It can be seen from the above that the taiko ring ring cutting mark structure 100 includes a substrate layer 110, an interlayer dielectric layer 120 and a metal mark structure 130.

[0041] The metal mark structure 130 includes a metal layer 131, which covers the interlayer dielectric layer 120.

[0042] The metal mark structure 130 further includes a plurality of mutually spaced metal contact holes 132, each of which is connected to the metal layer 131 upward, and each of which penetrates the interlayer dielectric layer 120 downward and extends into the substrate layer 110.

[0043] In this embodiment, the metal contact hole extends downward through the interlayer dielectric layer into the base layer and connects upward with the metal layer. This increases the traction force on the metal layer when circumferentially cutting the metal marker structure, reducing the probability that the metal layer will peel off from the interlayer dielectric layer during circumferential cutting.

[0044] Reference Figure 3 It shows in Figure 2 A cross-sectional view of another taiko ring cut marker structure based on the embodiment shown. Figure 3 In the illustrated embodiment, to further reduce the probability of the metal layer peeling off from the interlayer dielectric layer, in Figure 2 Based on the embodiment shown, the metal layer 131 includes a plurality of metal segments 1311, and adjacent metal segments 1311 are separated by dividing channels 140.

[0045] Dividing the metal layer 131 into several metal segments 1311 allows it to adhere more reliably to the interlayer dielectric layer 120 during the circumferential cutting process compared to a single metal layer, thus preventing peeling and detachment.

[0046] Figure 3 In the illustrated embodiment, the dividing channel 140 in the marker region is located between two adjacent metal contact holes 132. Two adjacent dividing channels 140 divide the metal layer 131 into metal segments 1311. Optionally, at least one metal contact hole 132 is spaced between two adjacent dividing channels 140. Each metal segment 1311 is in contact with at least one metal contact hole 132. Figure 3 In the illustrated embodiment, the metal segment 1311 is connected to multiple metal contact holes 132, thereby improving the adhesion between the metal segment 1311 and the interlayer dielectric layer 120 and avoiding the problem of the metal segment 1311 peeling off during circumferential cutting.

[0047] Reference Figure 4 It shows in Figure 2 A cross-sectional view of another taiko ring cut marker structure based on the embodiment shown. Figure 4 In the embodiment shown, in order to further reduce the probability of the metal layer peeling off from the interlayer dielectric layer, the metal layer 131 includes a plurality of metal segments 1311, and adjacent metal segments 1311 are separated by a dividing channel 140.

[0048] The metal layer 131 is divided into several metal segments 1311. Compared with a whole metal layer, it can be more reliably attached to the interlayer dielectric layer 120 during the circumferential cutting process, avoiding lifting and peeling.

[0049] Figure 4In the illustrated embodiment, the dividing channel 140 is located in the marker region, at the location of the metal contact hole 132, i.e., the dividing channel 140 passes through the metal contact hole 132. Optionally, in the marker region, at least one metal contact hole 132 is spaced between two adjacent dividing channels 140. Two adjacent dividing channels 140 divide the metal layer 131 into metal segments 1311, each metal segment 1311 being in contact with at least one metal contact hole 132, and the metal contact hole 132 located at the position of the dividing channel 140 being in contact with the boundary between two adjacent metal segments 1311.

[0050] exist Figure 4 In the illustrated embodiment, the metal segment 1311 is connected to multiple metal contact holes 132, thereby improving the adhesion between the metal segment 1311 and the interlayer dielectric layer 120 and avoiding the problem of the metal segment 1311 peeling off during circumferential cutting.

[0051] Reference Figure 5 It shows the method used to form Figure 2 The flowchart shown illustrates the manufacturing method of the taiko ring-cutting marker structure. Figure 5 As can be seen from this, the manufacturing method of the taiko ring-cut marker structure includes the following steps S1 to S4 performed sequentially:

[0052] Step S1: Provide a wafer, which includes a drum ring and a wafer body.

[0053] Step S2: A plurality of spaced-apart contact holes are etched in the marker region of the wafer, each contact hole extending downward through the interlayer dielectric layer of the wafer into the substrate layer; the marker region is located at the junction of the tad ring and the wafer body.

[0054] Reference Figure 1 It can be seen that the marker region 102 is located at the junction 101 between the taiko ring and the wafer body.

[0055] In step S2, a photolithography process can be used. First, a contact hole pattern is defined on the interlayer dielectric layer of the wafer using photoresist. Then, etching is performed based on the contact hole pattern to form a contact hole that extends through the interlayer dielectric layer of the wafer into the substrate layer in the marker area.

[0056] Step S3: Deposit metal into the contact hole to form a metal contact hole.

[0057] In addition to depositing metal into the contact holes to form metal contact holes, the device surface can also be planarized by chemical mechanical polishing.

[0058] Step S4: depositing metal so that a metal layer is formed in the mark area, the metal layer covering on the interlayer dielectric layer, thereby forming Figure 2 the drum ring cut mark structure as shown in FIG. 1.

[0059] The embodiment can increase the traction of the metal layer when the metal mark structure is cut, and reduce the probability of peeling of the metal layer from the interlayer dielectric layer during the cutting.

[0060] To further reduce the probability of peeling of the metal layer from the interlayer dielectric layer, the following step can be performed after the completion of step S4:

[0061] scribe a separation path in the mark area, the separation path separating the metal layer into a plurality of metal segments.

[0062] The metal layer is separated into a plurality of metal segments by the separation path, which can be more reliably attached to the interlayer dielectric layer during the cutting process than a whole metal layer, and avoid peeling.

[0063] According to the position of the scribed separation path, the embodiment can further include the following two implementation manners to form Figure 3 the drum ring cut mark structure as shown in FIG. 1 and Figure 4 the drum ring cut mark structure as shown in FIG. 2.

[0064] In the mark area, a separation path is scribed at a position between two adjacent metal contact holes, and at least one metal contact hole is spaced between two adjacent separation paths; the separation path separates the metal layer into a plurality of metal segments, each metal segment is connected to at least one metal contact hole, thereby forming Figure 3 the drum ring cut mark structure as shown in FIG. 1.

[0065] In the mark area, a separation path is scribed at a position of the metal contact hole, and at least one metal contact hole is spaced between two adjacent separation paths; the separation path separates the metal layer into a plurality of metal segments, each metal segment is connected to at least one metal contact hole, and the metal contact hole at the position of the separation path is connected to the junction of two adjacent metal segments, thereby forming Figure 4 the drum ring cut mark structure as shown in FIG. 2.

[0066] Obviously, the above embodiments are merely example for clearly illustrating but not limitation to the embodiments. Based on the above description, other different forms of changes or variations can be made by those skilled in the art. Here, all the embodiments are not required to be enumerated and it is impossible to enumerate all the embodiments. The changes or variations derived from the above are still within the protection scope of the present application.

Claims

1. A taigai ring cut mark structure, characterized by, The drum ring ring cutting mark structure is located at a mark area at the junction of the drum ring and the wafer body, and comprises a substrate layer, an interlayer dielectric layer and a metal mark structure. The metal mark structure comprises a metal layer covering the interlayer dielectric layer. The metal mark structure further comprises a plurality of mutually spaced metal contact holes, each of which is connected to the metal layer upward and extends into the substrate layer downward through the interlayer dielectric layer.

2. The tooled ring ring cutting index structure of claim 1 wherein, The metal layer comprises a plurality of metal segments, and two adjacent metal segments are separated by a separation channel.

3. The tooled ring ring cutting index structure of claim 2, wherein, The separation channel is located in the mark area at the position between two adjacent metal contact holes. Each metal segment is connected to at least one metal contact hole.

4. The tooled ring ring cutting index structure of claim 2, wherein, The separation channel is located in the mark area at the position of the metal contact hole. Each metal segment is connected to at least one metal contact hole. The metal contact hole at the position of the separation channel is connected to the junction of two adjacent metal segments.

5. A method of manufacturing a taiko ring cut mark structure, characterized by, The manufacturing method of the drum ring ring cutting mark structure comprises the following steps: Providing a wafer comprising a drum ring and a wafer body; Etching a plurality of mutually spaced contact holes in the mark area of the wafer, each of which extends into the substrate layer downward through the interlayer dielectric layer of the wafer; the mark area is located at the junction of the drum ring and the wafer body; Depositing metal to form metal contact holes in the contact holes; Depositing metal to form a metal layer in the mark area, which covers the interlayer dielectric layer.

6. The manufacturing method of the taigai ring cut mark structure according to claim 5, wherein After the step of depositing metal to form a metal layer in the mark area, which covers the interlayer dielectric layer, is completed, the following step is further performed: Scribing a separation channel in the mark area, which separates the metal layer into a plurality of metal segments.

7. The method of manufacturing a taig ring ring cut marker according to claim 6, wherein, The step of scribing a separation channel in the mark area, which separates the metal layer into a plurality of metal segments, comprises: Scribing a separation channel in the mark area at the position between two adjacent metal contact holes; So that the separation channel separates the metal layer into a plurality of metal segments, each of which is connected to at least one metal contact hole.

8. The method of claim 6, wherein the step of forming the tooled ring is performed by a process comprising: providing a ring blank; and forming the tooled ring by cutting the ring blank with a tooled ring cutter. The step of scribing a separation channel in the mark area, which separates the metal layer into a plurality of metal segments, comprises: Scribing a separation channel in the mark area at the position of the metal contact hole; So that the separation channel separates the metal layer into a plurality of metal segments, each of which is connected to at least one metal contact hole, and the metal contact hole at the position of the separation channel is connected to the junction of two adjacent metal segments.

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