Display panel and manufacturing method thereof

Abstract

The application discloses a display panel and a manufacturing method thereof. The display panel comprises a substrate, a first metal layer, an insulating layer, a second metal layer, an organic functional layer and a cathode layer which are sequentially arranged on the substrate. The first metal layer comprises a plurality of auxiliary electrodes. The insulating layer comprises a plurality of openings, and one opening corresponds to one auxiliary electrode. The second metal layer comprises a plurality of support portions, and one support portion corresponds to one opening. Each support portion comprises a first sub-layer, a second sub-layer and a third sub-layer which are stacked. The opening comprises a first undercut opening which is arranged in the insulating layer and located between the auxiliary electrode and the support portion. The second sub-layer is provided with a second undercut opening which is located between the first sub-layer and the third sub-layer. The organic functional layer is interrupted at the first undercut opening or the second undercut opening. The cathode layer extends into the first undercut opening and is overlapped with the auxiliary electrode. The application can reduce the resistance of the cathode layer, improve the voltage drop phenomenon and improve the display uniformity of the display panel.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel and a manufacturing method thereof. BACKGROUND

[0002] Organic Light-Emitting Diode (OLED) display panel has been widely concerned due to its display characteristics and quality beyond LCD, such as thinness, short response time, low driving voltage, better display color and display viewing angle, etc. In recent years, its development is changing rapidly, and it can not only be made into a curved display, but also gradually develops towards large size.

[0003] The problem of voltage drop caused by the thin cathode of large-size OLED display panel is more urgent to be solved, especially for the top-emitting panel, which is prone to produce visual Mura (display unevenness).

[0004] At present, an auxiliary electrode is commonly used in parallel with the cathode layer to improve the voltage drop phenomenon. Generally, an inverted trapezoidal isolation column is arranged between the cathode and the auxiliary electrode. However, the isolation column has a large volume ratio, high forming difficulty, affects the aperture ratio and packaging, and has less selectivity of raw materials, which makes the manufacturing process complex, reduces the production efficiency, and reduces the yield. SUMMARY

[0005] The display panel and the manufacturing method thereof provided by the embodiments of the present application can improve the voltage drop phenomenon, improve the display uniformity of the display panel, avoid the manufacturing of the isolation column, reduce the process difficulty, and improve the production efficiency.

[0006] The display panel provided by the embodiments of the present application comprises:

[0007] a substrate;

[0008] a first metal layer arranged on the substrate, the first metal layer comprising a plurality of auxiliary electrodes;

[0009] an insulating layer arranged on a side of the first metal layer away from the substrate, and comprising a plurality of openings, one opening corresponding to one auxiliary electrode;

[0010] a second metal layer arranged on a side of the insulating layer away from the first metal layer, and comprising a plurality of support portions, one support portion corresponding to one opening, and each support portion comprising a first sub-layer, a second sub-layer and a third sub-layer arranged in layers, the first sub-layer being located between the insulating layer and the second sub-layer, and the third sub-layer being located on a side of the second sub-layer away from the first sub-layer;

[0011] an organic functional layer disposed on a side of the second metal layer away from the insulating layer;

[0012] a cathode layer disposed on a side of the organic functional layer away from the second metal layer;

[0013] wherein the opening comprises a first undercut opening disposed in the insulating layer and between the auxiliary electrode and the support portion, and at the opening, the second sub-layer is provided with a second undercut opening between the first sub-layer and the third sub-layer, the organic functional layer is interrupted at the first undercut opening or the second undercut opening, and the cathode layer extends into the first undercut opening to overlap the auxiliary electrode.

[0014] In an embodiment of the present application, each of the support portions surrounds a corresponding opening, and the first undercut opening and the second undercut opening are both annular in orthographic projection on the substrate.

[0015] In an embodiment of the present application, the cathode layer continuously covers the sidewall of the support portion and extends into the first undercut opening to overlap the auxiliary electrode.

[0016] In an embodiment of the present application, the cathode layer covers the second undercut opening and extends into the first undercut opening to overlap the auxiliary electrode, and the cathode layer partially extends into the second undercut opening.

[0017] In an embodiment of the present application, the second metal layer further comprises a plurality of anodes spaced apart from the plurality of support portions, each of the anodes comprising a fourth sub-layer, a fifth sub-layer and a sixth sub-layer stacked, the fourth sub-layer being between the insulating layer and the fifth sub-layer, the sixth sub-layer being on a side of the fifth sub-layer away from the fourth sub-layer;

[0018] wherein the fourth sub-layer is provided with a third undercut opening between the fifth sub-layer and the sixth sub-layer.

[0019] In an embodiment of the present application, the material of the first sub-layer is the same as that of the fourth sub-layer, the material of the second sub-layer is the same as that of the fifth sub-layer, and the material of the third sub-layer is the same as that of the sixth sub-layer.

[0020] In an embodiment of the present application, the depth of the second undercut opening is greater than the depth of the third undercut opening.

[0021] In an embodiment of the present application, the first metal layer further comprises a plurality of source electrodes and a plurality of drain electrodes spaced apart from the plurality of auxiliary electrodes, and one of the drain electrodes is electrically connected to one of the anodes, and one of the drain electrodes is overlapped with the fourth sub-layer of the corresponding one of the anodes.

[0022] In an embodiment of the present application, the organic functional layer comprises a first sub-portion disposed in the opening and on the auxiliary electrode, and a second sub-portion disposed outside the opening and spaced apart from the first sub-portion;

[0023] wherein the end of the second sub-portion close to the side of the opening has a normal projection on the substrate within the coverage range of the normal projection of the third sub-layer on the substrate, and the cathode layer covers the first sub-portion and extends into the first undercut opening to overlap with the auxiliary electrode.

[0024] According to the above-mentioned purposes of the present application, the embodiments of the present application further provide a manufacturing method of a display panel, comprising the following steps:

[0025] providing a substrate;

[0026] forming a first metal layer on the substrate, the first metal layer comprising a plurality of auxiliary electrodes;

[0027] forming an insulating layer on the side of the first metal layer away from the substrate;

[0028] forming a second metal layer on the side of the insulating layer away from the first metal layer, the second metal layer comprising a plurality of support portions, one of the support portions corresponding to one of the auxiliary electrodes, and each of the support portions comprising a first sub-layer, a second sub-layer and a third sub-layer stacked, the first sub-layer being between the insulating layer and the second sub-layer, and the third sub-layer being on the side of the second sub-layer away from the first sub-layer;

[0029] forming a plurality of openings in the insulating layer, one of the openings corresponding to one of the auxiliary electrodes, the opening comprising a first undercut opening formed in the insulating layer and between the auxiliary electrode and the support portion, and at the opening, the second sub-layer has a second undercut opening formed therebetween the first sub-layer and the third sub-layer;

[0030] forming an organic functional layer on the side of the second metal layer away from the insulating layer, the organic functional layer being interrupted at the first undercut opening or the second undercut opening;

[0031] forming a cathode layer on the side of the organic functional layer away from the second metal layer, the cathode layer extending into the first undercut opening to overlap with the auxiliary electrode.

[0032] The beneficial effects of the present application: the present application sets a support part in the second metal layer, and sets a first undercut opening between the support part and the auxiliary electrode in the insulating layer, and then the cathode layer can extend into the first undercut opening and lap with the auxiliary electrode, reduce the resistance of the cathode layer, improve the voltage drop phenomenon, and improve the display uniformity of the display panel; and compared with the prior art, the present application does not need to make isolation columns, reduces the process difficulty, and improves the production efficiency; in addition, the first undercut opening is arranged in the insulating layer, the second undercut opening is arranged in the support part, and the organic functional layer is interrupted at the first undercut opening or the second undercut opening, thereby the success rate of interrupting the organic functional layer can be improved, the success rate of the cathode layer lapping with the auxiliary electrode can be improved, and the yield of the display panel is improved. BRIEF DESCRIPTION OF DRAWINGS

[0033] The technical solutions and other beneficial effects of the present application will be apparent from the following detailed description of the specific embodiments of the present application, combined with the accompanying drawings.

[0034] Figure 1 The structure schematic diagram of the display panel provided by the embodiment of the present application is shown in the following figure.

[0035] Figure 2 The flow chart of the manufacturing method of the display panel provided by the embodiment of the present application is shown in the following figure.

[0036] Figures 3 to 9 The structure schematic diagram of the manufacturing process of the display panel provided by the embodiment of the present application is shown in the following figure. DETAILED DESCRIPTION

[0037] The technical solutions and other beneficial effects of the present application will be apparent from the following detailed description of the specific embodiments of the present application, combined with the accompanying drawings.

[0038] The following disclosure provides many different embodiments, or examples, for implementing different structures of the present application. For the purpose of simplicity, the components and arrangements of the particular examples are shown in the following description. These are, of course, merely examples and are not intended to limit the present application. Moreover, the present application can be practiced with other specific arrangements also. The described implementation is an example adaptation of the present application for implementing an example of the present application and other implementations can be constructed according to the teachings of the present application.

[0039] The present application provides a display panel, please refer toFigure 1 The display panel comprises a substrate 10, a first metal layer 20, an insulating layer 30, a second metal layer, an organic functional layer 70, and a cathode layer 40.

[0040] The first metal layer 20 is arranged on the substrate 10, and the first metal layer 20 comprises a plurality of auxiliary electrodes 21; the insulating layer 30 is arranged on a side of the first metal layer 20 away from the substrate 10, and comprises a plurality of openings 301, one opening 301 corresponding to one auxiliary electrode 21; the second metal layer is arranged on a side of the insulating layer 30 away from the first metal layer 20, and comprises a plurality of support portions 31, one support portion 31 corresponding to one opening 301, and each support portion 31 comprising a first sub-layer 311, a second sub-layer 312, and a third sub-layer 313 arranged in layers, the first sub-layer 311 being located between the insulating layer 30 and the second sub-layer 312, and the third sub-layer 313 being located on a side of the second sub-layer 312 away from the first sub-layer 311; the organic functional layer 70 is arranged on a side of the second metal layer away from the insulating layer 30; and the cathode layer 40 is arranged on a side of the organic functional layer 70 away from the second metal layer.

[0041] Further, the opening 301 comprises a first undercut opening 302 arranged in the insulating layer 30 and located between the auxiliary electrode 21 and the support portion 31, and at the opening 301, the second sub-layer 312 is provided with a second undercut opening 310 located between the first sub-layer 311 and the third sub-layer 313, and the organic functional layer 70 is interrupted at the first undercut opening 302 or the second undercut opening 310, and the cathode layer 40 extends into the first undercut opening 302 to overlap the auxiliary electrode 21.

[0042] In the implementation and application process, the embodiment of the present application can make the cathode layer 40 extend into the first undercut opening 302 to overlap the auxiliary electrode 21 by arranging the support portion 31 in the second metal layer and the first undercut opening 302 in the insulating layer 30 between the support portion 31 and the auxiliary electrode 21, thereby reducing the resistance of the cathode layer 40, improving the voltage drop phenomenon, and improving the display uniformity of the display panel; compared with the prior art, the present application does not need to make isolation columns, thereby reducing the process difficulty and improving the production efficiency; in addition, the first undercut opening 302 is arranged in the insulating layer 30, and the second undercut opening 310 is arranged in the support portion 31, thereby improving the success rate of interruption of the organic functional layer 70 and the success rate of overlap of the cathode layer 40 and the auxiliary electrode 21.

[0043] Specifically, please continue to refer to Figure 1 The display panel provided by the embodiment of the present application comprises a display area 101 and a non-display area 102 adjacent to the display area 101.

[0044] Further, the display panel further comprises a substrate 10, a light shielding layer 61 disposed on the substrate 10, a buffer layer 51 disposed on the substrate 10 and covering the light shielding layer 61, an active layer 62 disposed on the buffer layer 51 and above the light shielding layer 61, a gate insulating layer 53 disposed on the buffer layer 51 and covering part of the upper surface of the active layer 62, a gate electrode 63 disposed on the gate insulating layer 53, an interlayer dielectric layer 52 disposed on the buffer layer 51 and covering the active layer 62, the gate insulating layer 53 and the gate electrode 63, a first metal layer 20 disposed on the interlayer dielectric layer 52, an insulating layer 30 disposed on the interlayer dielectric layer 52 and covering the first metal layer 20, a planarization layer 54 disposed on the insulating layer 30, a second metal layer disposed on the planarization layer 54, a pixel definition layer 55 disposed on the second metal layer, an organic functional layer 70 and a cathode layer 40 disposed on the definition layer 55 in sequence.

[0045] Specifically, the first metal layer 20 comprises a plurality of auxiliary electrodes 21, a plurality of source electrodes 22, a plurality of drain electrodes 23 disposed in the display area 101, and a plurality of signal terminals 24 disposed in the non-display area 102. The insulating layer 30 comprises a plurality of openings 301, each of which is disposed corresponding to one auxiliary electrode 21, and each of which exposes part of the upper surface of the corresponding auxiliary electrode 21; one source electrode 22 and one drain electrode 23 are disposed on both sides of one active layer 62, and one source electrode 22 and one drain electrode 23 are connected to both sides of the corresponding active layer 62 through the interlayer dielectric layer 52, further, each drain electrode 23 is also connected to the light shielding layer 61 through the interlayer dielectric layer 52 and the buffer layer 51, so that the light shielding layer 61 can be loaded with a stable voltage through the drain electrode 23, so as to reduce signal crosstalk; in addition, the insulating layer 30 further comprises a plurality of openings disposed in the non-display area 102, and one opening corresponds to one signal terminal 24 to expose part of the upper surface of the corresponding signal terminal 24, so as to facilitate the subsequent binding of the signal terminal 24.

[0046] The planarization layer 54 is disposed on the insulating layer 30, and the planarization layer 54 comprises a plurality of first communication openings and a plurality of contact holes disposed in the display area 101, wherein each first communication opening is disposed corresponding to one opening 301 and is in communication with the corresponding opening 301 to expose one auxiliary electrode 21, and the orthographic projection of each opening 301 on the substrate 10 is within the coverage range of the orthographic projection of the corresponding first communication opening on the substrate 10.

[0047] The second metal layer includes a plurality of support portions 31 and anodes 32 disposed in the display area 101. Each support portion 31 is disposed corresponding to one opening 301, i.e., corresponding to one first communication opening, each anode 32 is disposed corresponding to one contact hole, each support portion 31 is disposed on the planar layer 54 and extends to the sidewall of the first communication opening, and each support portion 31 partially extends above the corresponding opening 301, so that each opening 301 includes a first undercut opening 302 disposed in the insulating layer 30 and between the support portion 31 and the auxiliary electrode 21. Each anode 32 is electrically connected to one drain electrode through the corresponding contact hole.

[0048] In the embodiment of the present application, each support portion 31 is disposed around the corresponding opening 301, and the orthographic projection of each first undercut opening 302 on the substrate 10 is annular.

[0049] It should be noted that each support portion 31 includes a first sub-layer 311, a second sub-layer 312 and a third sub-layer 313 disposed in layers, and the first sub-layer 311 is between the insulating layer 30 and the second sub-layer 312, and the third sub-layer 313 is on the side of the second sub-layer 312 away from the first sub-layer 311; each anode includes a fourth sub-layer 321, a fifth sub-layer 322 and a sixth sub-layer 323 disposed in layers, and the fourth sub-layer 321 is between the insulating layer 30 and the fifth sub-layer 322, and the sixth sub-layer 323 is on the side of the fifth sub-layer 322 away from the fourth sub-layer 321, and the fourth sub-layer 321 is overlapped with the corresponding drain electrode 23 through the contact hole. Among them, the material of the first sub-layer 311 is the same as the material of the fourth sub-layer 321, the material of the second sub-layer 312 is the same as the material of the fifth sub-layer 322, and the material of the third sub-layer 313 is the same as the material of the sixth sub-layer 323, i.e., the second metal layer is a laminated structure formed by three metal sub-layers.

[0050] Optionally, the material of the first sub-layer 311 and the material of the fourth sub-layer 321 can be Mo, Ti and Ni, the material of the second sub-layer 312 and the material of the fifth sub-layer 322 can include ANCL, and ANCL is a mixture of Al, Ni, Cu and La, and the material of the third sub-layer 313 and the material of the sixth sub-layer 323 can include ITO (Indium Tin Oxides, Indium Tin Oxides) material.

[0051] In the embodiment of the present application, the second sub-layer 312 is provided with the second undercut opening 310 between the first sub-layer 311 and the third sub-layer 313 at the opening 301. The fifth sub-layer 322 is provided with the third undercut opening 320 between the fourth sub-layer 321 and the sixth sub-layer 323. The second undercut opening 310 can also be annular in the orthographic projection on the substrate 10, and the second undercut opening 310 is above the first undercut opening 302 and arranged in layers with the first undercut opening 302.

[0052] It can be understood that, in the embodiment of the present application, when the second metal layer is patterned to obtain the plurality of auxiliary electrodes 21 and the plurality of anodes 32, since the main component of the material of the second sub-layer 312 and the fifth sub-layer 322 is Al, side etching is prone to occur, causing the side edges of the second sub-layer 312 and the fifth sub-layer 322 to be inwardly recessed; and when the first undercut opening 302 is formed, side etching is needed for the insulating layer 30, but since the main component of the material of the second sub-layer 312 is Al, side etching also occurs to the second sub-layer 312 at the opening 301 in the process of side etching of the insulating layer 30, finally causing the degree of inward recess of the side wall of the second sub-layer 312 to be greater than that of the fifth sub-layer 322, i.e., the depth of the second undercut opening 310 is greater than that of the third undercut opening 320.

[0053] The pixel definition layer 55 is arranged on the second metal layer and the planarization layer 54, and the pixel definition layer 55 includes a plurality of second communication openings and a plurality of pixel openings. Each second communication opening is arranged in correspondence with and in communication with one first communication opening, and exposes part of the upper surface of the corresponding auxiliary electrode 21, and each pixel opening is arranged in correspondence with one anode 32, and exposes part of the upper surface of the corresponding anode 32.

[0054] The organic functional layer 70 is arranged on the pixel definition layer 55, and the organic functional layer 70 is interrupted at the first undercut opening 302 or the second undercut opening 310, i.e., the organic functional layer 70 can be interrupted at the first undercut opening 302, or can be interrupted at the second undercut opening 310, and the first undercut opening 302 and the second undercut opening 310 can be annularly distributed, and thus the organic functional layer 70 can also be interrupted at the first undercut opening 302 in some areas, and interrupted at the second undercut opening 310 in some areas.

[0055] The organic functional layer 70 includes a first sub-portion 71 arranged in the opening 301 and on the auxiliary electrode 21, and a second sub-portion 72 arranged outside the opening 301 and spaced from the first sub-portion 71, and the second sub-portion 72 is arranged on the pixel definition layer 55 and on the sidewalls of the first and second communication openings. In the embodiment, the undercut opening formed above the auxiliary electrode 21 can make the organic functional layer 70 be interrupted at the undercut opening, so as to facilitate the subsequent lapping of the cathode layer 40 and the auxiliary electrode 21. In the embodiment, the first undercut opening 302 and the second undercut opening 310 are formed in a stack above the auxiliary electrode 21, so as to improve the success rate of interrupting the organic functional layer 70, and improve the success rate of lapping the cathode layer 40 and the auxiliary electrode 21, and improve the yield of the display panel.

[0056] The cathode layer 40 is arranged on the organic functional layer 70, and the cathode layer 40 covers the first sub-portion 71 and extends into the first undercut opening 302 to lap the auxiliary electrode 21. In the embodiment, the cathode layer 40 continuously covers the sidewalls of the support portion 31 and extends into the first undercut opening 302 to lap the auxiliary electrode 21.

[0057] It should be noted that, in the embodiment, the cathode layer 40 is not interrupted at the first undercut opening 302 and the second undercut opening 310 by controlling the evaporation process parameters, and continuously covers the second sub-portion 72 and the sidewalls of the support portion 31 and extends into the first undercut opening 302 to lap the auxiliary electrode 21.

[0058] Further, the cathode layer 40 also covers the second undercut opening 310 and extends into the first undercut opening 302 to lap the auxiliary electrode, and part of the cathode layer 40 extends into the second undercut opening 310.

[0059] As described above, in the embodiment, the support portion 31 is arranged in the second metal layer, and the first undercut opening 302 is arranged in the insulating layer 30 between the support portion 31 and the auxiliary electrode 21, so that the cathode layer 40 extends into the first undercut opening 302 to lap the auxiliary electrode 21, reduces the resistance of the cathode layer 40, improves the voltage drop phenomenon, and improves the display uniformity of the display panel. Compared with the prior art, the embodiment does not need to make an isolation column, reduces the process difficulty, and improves the production efficiency. Further, the first undercut opening 302 and the second undercut opening 310 are formed in a stack above the auxiliary electrode 21, so as to improve the success rate of interrupting the organic functional layer 70, and further improve the success rate of lapping the cathode layer 40 and the auxiliary electrode 21, and improve the display uniformity and yield of the display panel.

[0060] In addition, the embodiment also provides a manufacturing method of the display panel described in the above embodiments, which will be described in combination withFigure 1 、 Figure 2 and Figures 3 to 9 The display panel includes a display area 101 and a non-display area 102 adjacent to the display area 101, and a manufacturing method of the display panel includes the following steps:

[0061] S10, providing a substrate 10.

[0062] The substrate 10 is cleaned, and the substrate 10 can be a glass substrate.

[0063] S20, forming a first metal layer 20 on the substrate 10, the first metal layer 20 including a plurality of auxiliary electrodes 21.

[0064] A first metal material layer is deposited on the substrate 10, and the first metal material layer is patterned to obtain a plurality of light shielding layers 61 on the substrate 10. Optionally, the material of the first metal material layer includes at least one of Mo, Ti, Cu, and Mn.

[0065] A buffer layer 51 is formed on the substrate 10, the buffer layer 51 covering the plurality of light shielding layers 61. Optionally, the buffer layer 51 can be at least one of a silicon oxide film, a silicon nitride film, or a laminated structure of a silicon oxide film and a silicon nitride film.

[0066] A semiconductor layer is formed on the buffer layer 51 using a metal oxide material, and the semiconductor layer is patterned to obtain a plurality of active layers 62, and one active layer 62 corresponds to above one light shielding layer 61, and the orthographic projection of the active layer 62 on the substrate 10 is within the coverage range of the orthographic projection of the corresponding light shielding layer 61 on the substrate 10.

[0067] Optionally, the material of the semiconductor layer includes IGZO (Indium Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), and IGZTO (Indium Gallium Zinc TiOxide).

[0068] An insulating material layer is formed on the buffer layer 51, and the insulating material layer covers the plurality of active layers 62. Optionally, the insulating material layer can be at least one of a silicon oxide film, a silicon nitride film, or a laminated structure of a silicon oxide film and a silicon nitride film.

[0069] Forming a gate metal layer on the insulating material layer, and performing a patterning process on the gate metal layer to obtain a plurality of gates 63, and each gate 63 is located above a corresponding active layer 62, and the orthographic projection of the gate 63 on the substrate 10 is located within the coverage range of the orthographic projection of the corresponding active layer 62 on the substrate 10. Optionally, the material of the gate metal layer includes at least one of Mo, Ti and Cu.

[0070] Using the plurality of gates 63 as a self-alignment layer to perform an etching process on the insulating material layer, that is, the insulating material layer between the gate 63 and the active layer 62 can be reserved, and the insulating material layer at the remaining positions is removed to form a gate insulating layer 53.

[0071] Then, performing a whole-surface plasma treatment on the display panel, so that the part of the active layer 62 not covered by the gate insulating layer 53 and the gate 63 forms an N+ conductor, which can reduce the resistance. In the embodiment of the present application, the gate 63 and the gate insulating layer 53 are located in the middle region of the active layer 62, and the region of the active layer 62 covered by the gate 63 and the gate insulating layer 53 maintains the semiconductor property to serve as the channel of the thin film transistor.

[0072] Forming an interlayer dielectric layer 52 on the buffer layer 51, and the interlayer dielectric layer 52 covers the active layer 62, the gate insulating layer 53 and the gate 63. Optionally, the interlayer dielectric layer 52 can be at least one silicon oxide film, at least one silicon nitride film, or a laminated structure of at least one silicon oxide film and at least one silicon nitride film.

[0073] Performing a patterning process on the interlayer dielectric layer 52 to etch a plurality of source contact holes and a plurality of drain contact holes.

[0074] Forming a first metal layer 20 on the interlayer dielectric layer 52, and the first metal layer 20 includes a plurality of auxiliary electrodes 21, a plurality of sources 22, a plurality of drains 23 formed in the display area 101, and a plurality of signal terminals 24 formed in the non-display area 102. One source 22 and one drain 23 are correspondingly arranged above the two sides of one active layer 62, and one source 22 and one drain 23 are respectively connected to the two sides of the corresponding active layer 62 through the source contact hole and the drain contact hole, and further, each drain 23 is connected to the light shielding layer 61 through the interlayer dielectric layer 52 and the buffer layer 51, so that the light shielding layer 61 can be loaded with a stable voltage through the drain 23 to reduce signal crosstalk; in addition, the insulating layer 30 further includes a plurality of openings arranged in the non-display area 102, and one opening is arranged corresponding to one signal terminal 24 to expose part of the upper surface of the corresponding signal terminal 24, so as to facilitate the subsequent binding of the signal terminal 24.

[0075] Optionally, the first metal layer 20 can be a laminated structure of MoTi / Cu / MoTi.

[0076] S30, forming an insulating layer 30 on the side of the first metal layer 20 away from the substrate 10.

[0077] The insulating layer 30 formed on the first metal layer 20 can be at least one of a silicon oxide film, a silicon nitride film, or a laminated structure of a silicon oxide film and a silicon nitride film.

[0078] The insulating layer 30 is patterned to form a plurality of first sub-holes 303 in the display area 101 and a plurality of openings 304 in the non-display area 102, each first sub-hole 303 corresponding to a drain electrode 23, and each opening 304 corresponding to a signal terminal 24.

[0079] S40, forming a second metal layer on the side of the insulating layer 30 away from the first metal layer 20, the second metal layer including a plurality of support portions 31, each support portion 31 corresponding to an auxiliary electrode 21, each support portion 31 including a first sub-layer 311, a second sub-layer 312, and a third sub-layer 313, the first sub-layer 311 being between the insulating layer 30 and the second sub-layer 312, and the third sub-layer 313 being on the side of the second sub-layer 312 away from the first sub-layer 311.

[0080] A planar layer 54 is formed on the insulating layer 30, and the planar layer 54 can include at least one organic material sub-layer, and the planar layer 54 is patterned to form a plurality of first communication openings 306 in the display area 101 and a plurality of second sub-holes 305, each first communication opening 306 corresponding to an auxiliary electrode 21, and each second sub-hole 305 corresponding to a first sub-hole 303 and being in communication with the corresponding first sub-hole 303 to expose the corresponding drain electrode 23.

[0081] A second metal layer is formed on the planar layer 54, and the second metal layer is patterned to form a plurality of support portions 31 and a plurality of anodes 32 in the display area 101, the plurality of support portions 31 and the plurality of anodes 32 being spaced apart. Each support portion 31 corresponds to an auxiliary electrode 21, i.e., a first communication opening 306, and each support portion 31 surrounds the corresponding first communication opening 306 and partially extends into the first communication opening 306, and the first support portion 31 only covers part of the bottom of the first communication opening 306, and the part of the first communication opening 306 not covered by the first support portion 31 can be in the middle region of the bottom of the first communication opening 306.

[0082] Optionally, the second metal layer can be a laminated structure of MoTiNi / ANCL / ITO, that is, each support portion 31 comprises a laminated first sub-layer 311, a second sub-layer 312 and a third sub-layer 313, and the first sub-layer 311 is located between the insulating layer 30 and the second sub-layer 312, and the third sub-layer 313 is located on the side of the second sub-layer 312 away from the first sub-layer 311; each anode comprises a laminated fourth sub-layer 321, a fifth sub-layer 322 and a sixth sub-layer 323, and the fourth sub-layer 321 is located between the insulating layer 30 and the fifth sub-layer 322, and the sixth sub-layer 323 is located on the side of the fifth sub-layer 322 away from the fourth sub-layer 321, and the fourth sub-layer 321 is overlapped with the corresponding drain electrode 23 through the first sub-hole 303 and the second sub-hole 305. The material of the first sub-layer 311 is the same as that of the fourth sub-layer 321, the material of the second sub-layer 312 is the same as that of the fifth sub-layer 322, and the material of the third sub-layer 313 is the same as that of the sixth sub-layer 323, that is, the second metal layer is a laminated structure formed by three layer metal sub-layers. Optionally, the material of the first sub-layer 311 and the material of the fourth sub-layer 321 can be Mo, Ti and Ni, the material of the second sub-layer 312 and the material of the fifth sub-layer 322 can comprise ANCL, and the material of the third sub-layer 313 and the material of the sixth sub-layer 323 can comprise ITO material.

[0083] Further, in the etching process, since the main components of the materials of the second sub-layer 312 and the fifth sub-layer 322 are both Al, side etching phenomenon is easy to occur, that is, the sidewall of the second sub-layer 312 is inwardly recessed relative to the sidewalls of the first sub-layer 311 and the third sub-layer 313, and the sidewall of the fifth sub-layer 322 is inwardly recessed relative to the sidewalls of the fourth sub-layer 321 and the sixth sub-layer 323, to form the third undercut opening 320.

[0084] S50, a plurality of openings 301 are formed in the insulating layer 30, and one opening 301 corresponds to one auxiliary electrode 21, and the opening 301 comprises a first undercut opening 302 arranged in the insulating layer 30 and located between the auxiliary electrode 21 and the support portion 31, and at the opening 301, the second undercut opening 310 is formed in the second sub-layer 312 between the first sub-layer 311 and the third sub-layer 313.

[0085] A photoresist layer 80 is formed on the insulating layer 30, and the photoresist layer 80 covers the area in the display area 101 except the first communication opening 306, and then hydrofluoric acid is used to etch the insulating layer 30 to form the opening 301 in the insulating layer 30 above each auxiliary electrode 21 to expose part of the upper surface of each auxiliary electrode 21. Further, side etching of the insulating layer 30 can be caused in the opening 301, so that the sidewall of the insulating layer 30 is inwardly recessed relative to the sidewall of the support portion 31, so that the insulating layer 30 forms the first undercut opening 302 between the support portion 31 and the auxiliary electrode 21 at the opening 301.

[0086] Further, since the main material of the second sub-layer 312 includes Al, the second sub-layer 312 will also be side-etched at the opening 301 while the insulating layer 30 is side-etched, to form a second undercut opening 310; since the second sub-layer 312 is side-etched at the opening 301 both in the second metal layer patterning process and in the insulating layer 30 etching process, and the fifth sub-layer 322 is side-etched in the second metal layer patterning process to form a third undercut opening 320, the depth of the second undercut opening 310 is greater than the depth of the third undercut opening 320.

[0087] Then, the photoresist layer 80 is removed.

[0088] S60, an organic functional layer 70 is formed on the side of the second metal layer away from the insulating layer 30, and the organic functional layer 70 is interrupted at the first undercut opening 302 or the second undercut opening 310.

[0089] A pixel definition layer 55 is formed on the second metal layer, and the pixel definition layer 55 is patterned to form a plurality of second communication openings 307 and a plurality of pixel openings, one second communication opening 307 is arranged corresponding to one first communication opening 306 and is in communication with the corresponding first communication opening 306 and the opening 301 to expose the corresponding auxiliary electrode 21; each pixel opening is arranged corresponding to one anode 32 and exposes part of the upper surface of the corresponding anode 32.

[0090] The organic functional layer 70 is formed on the pixel definition layer 55, and the organic functional layer 70 is interrupted at the first undercut opening 302 or the second undercut opening 310, that is, the organic functional layer 70 can be interrupted at the first undercut opening 302, or can be interrupted at the second undercut opening 310, and the first undercut opening 302 and the second undercut opening 310 can be annularly distributed, so that the organic functional layer 70 can also be interrupted at the first undercut opening 302 in part of the area, and be interrupted at the second undercut opening 310 in another part of the area.

[0091] The organic functional layer 70 includes a first sub-portion 71 disposed in the opening 301 and on the auxiliary electrode 21, and a second sub-portion 72 disposed outside the opening 301 and spaced apart from the first sub-portion 71, and the second sub-portion 72 is disposed on the pixel definition layer 55 and on the sidewalls of the first and second communication openings. In the embodiment, the undercut opening formed above the auxiliary electrode 21 can make the organic functional layer 70 be interrupted at the undercut opening, so as to facilitate the subsequent lapping of the cathode layer 40 and the auxiliary electrode 21. In the embodiment, the first undercut opening 302 and the second undercut opening 310 are formed in a stack above the auxiliary electrode 21, so as to improve the success rate of interrupting the organic functional layer 70, improve the success rate of lapping the cathode layer 40 and the auxiliary electrode 21, and improve the yield of the display panel.

[0092] S70, forming a cathode layer 40 on the side of the organic functional layer 70 away from the second metal layer, and the cathode layer 40 extends into the first undercut opening 302 and lapped with the auxiliary electrode 21.

[0093] The cathode layer 40 is formed on the organic functional layer 70 by a vapor deposition process, and the cathode layer 40 continuously covers the second sub-portion 72 and the first sub-portion 71 and extends into the first undercut opening 302 and lapped with the auxiliary electrode 21. In the embodiment, the cathode layer 40 continuously covers the sidewalls of the support portion 31 and extends into the first undercut opening 302 and lapped with the auxiliary electrode 21.

[0094] It should be noted that in the embodiment, by controlling the vapor deposition process parameters, the cathode layer 40 is not interrupted at the first undercut opening 302 and the second undercut opening 310, and continuously covers the second sub-portion 72 and the sidewalls of the support portion 31, and extends into the first undercut opening 302 and lapped with the auxiliary electrode 21.

[0095] Further, the cathode layer 40 also covers the second undercut opening 310 and extends into the first undercut opening 302 and lapped with the auxiliary electrode, and the cathode layer 40 partially extends into the second undercut opening 310.

[0096] In the above embodiment, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0097] In the above embodiment, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0098] The above describes in detail the display panel and the manufacturing method thereof provided by the embodiments of the present application, and the principles and implementation manners of the present application are described by using specific examples, and the above description of the embodiments is only used to help understand the technical solutions and the core ideas of the present application; those skilled in the art should understand that the technical solutions recorded in the above embodiments can be modified, or some technical features can be replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A display panel, characterized in that, include: substrate; A first metal layer is disposed on the substrate, and the first metal layer includes a plurality of auxiliary electrodes; An insulating layer is disposed on the side of the first metal layer away from the substrate, and includes a plurality of openings, one of the openings corresponding to one of the auxiliary electrodes; The second metal layer is disposed on the side of the insulating layer away from the first metal layer, and includes a plurality of support portions and a plurality of anodes. Each support portion is disposed corresponding to an opening. Each support portion includes a first sub-layer, a second sub-layer and a third sub-layer stacked together. The first sub-layer is located between the insulating layer and the second sub-layer, and the third sub-layer is located on the side of the second sub-layer away from the first sub-layer. An organic functional layer is disposed on the side of the second metal layer away from the insulating layer; A cathode layer is disposed on the side of the organic functional layer away from the second metal layer; The opening includes a first undercut opening disposed in the insulating layer and located between the auxiliary electrode and the support portion. At the opening, a second undercut opening is disposed in the second sub-layer between the first sub-layer and the third sub-layer. The organic functional layer is separated at the first undercut opening or the second undercut opening. The cathode layer extends into the first undercut opening and overlaps with the auxiliary electrode.

2. The display panel according to claim 1, characterized in that, The cathode layer continuously covers the sidewall of the support portion and extends into the first undercut opening to overlap with the auxiliary electrode.

3. The display panel according to claim 2, characterized in that, The cathode layer covers the second undercut opening and extends into the first undercut opening to overlap with the auxiliary electrode, and a portion of the cathode layer extends into the second undercut opening.

4. The display panel according to claim 1, characterized in that, Each of the support portions is arranged around a corresponding opening, and the orthographic projections of the first undercut opening on the substrate and the second undercut opening on the substrate are both annular.

5. The display panel according to claim 1, characterized in that, The second metal layer also includes a plurality of anodes spaced apart from the plurality of support portions. Each anode includes a fourth sub-layer, a fifth sub-layer, and a sixth sub-layer stacked together. The fourth sub-layer is located between the insulating layer and the fifth sub-layer, and the sixth sub-layer is located on the side of the fifth sub-layer away from the fourth sub-layer. The fourth sub-layer has a third undercut opening located between the fifth and sixth sub-layers.

6. The display panel according to claim 5, characterized in that, The material of the first sublayer is the same as that of the fourth sublayer, the material of the second sublayer is the same as that of the fifth sublayer, and the material of the third sublayer is the same as that of the sixth sublayer.

7. The display panel according to claim 5, characterized in that, The depth of the second undercut opening is greater than the depth of the third undercut opening.

8. The display panel according to claim 5, characterized in that, The first metal layer further includes a plurality of source electrodes and a plurality of drain electrodes spaced apart from the plurality of auxiliary electrodes, and one drain electrode is electrically connected to one of the anode electrodes, and one drain electrode overlaps with the fourth sub-layer of the corresponding anode electrode.

9. The display panel according to claim 1, characterized in that, The organic functional layer includes a first sub-part disposed within the opening and located on the auxiliary electrode, and a second sub-part located outside the opening and spaced apart from the first sub-part. Wherein, the orthographic projection of the end of the second sub-part near the opening on the substrate is within the coverage area of ​​the orthographic projection of the third sub-layer on the substrate, and the cathode layer covers the first sub-part and extends into the first undercut opening to overlap with the auxiliary electrode.

10. A method for manufacturing a display panel, characterized in that, Includes the following steps: Provide substrate; A first metal layer is formed on the substrate, the first metal layer including a plurality of auxiliary electrodes; An insulating layer is formed on the side of the first metal layer away from the substrate; A second metal layer is formed on the side of the insulating layer away from the first metal layer. The second metal layer includes a plurality of support portions and a plurality of anodes. Each support portion is provided with an auxiliary electrode. Each support portion includes a first sub-layer, a second sub-layer and a third sub-layer stacked together. The first sub-layer is located between the insulating layer and the second sub-layer. The third sub-layer is located on the side of the second sub-layer away from the first sub-layer. A plurality of openings are formed in the insulating layer, and one of the openings corresponds to one of the auxiliary electrodes. The opening includes a first undercut opening formed in the insulating layer and located between the auxiliary electrode and the support portion. At the opening, a second undercut opening is formed in the second sub-layer between the first sub-layer and the third sub-layer. An organic functional layer is formed on the side of the second metal layer away from the insulating layer, and the organic functional layer is interrupted at the first undercut opening or the second undercut opening. A cathode layer is formed on the side of the organic functional layer away from the second metal layer, and the cathode layer extends into the first undercut opening and overlaps with the auxiliary electrode.

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