Semiconductor device

Abstract

A semiconductor device includes first and second switching elements, first and second conductive members, and a capacitor. The first switching element has first element main faces facing opposite sides in a first direction and a first element back face. The second switching element has second element main faces facing opposite sides in the first direction and a second element back face. The first and second conductive members are isolated from each other in a second direction orthogonal to the first direction. The capacitor has first and second connection terminals. The first switching element and the second switching element are connected in series to form a bridge. The first and second connection terminals are electrically connected to both ends of the bridge, respectively. The capacitor and the first switching element are mounted on the first conductive member, and the second switching element is mounted on the second conductive member.

Description

Technical Field

[0001] This invention relates to semiconductor devices. Background Technology

[0002] Semiconductor devices incorporating power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have long been known. For example, Patent Document 1 discloses a semiconductor device comprising two switching elements connected in series. Such semiconductor devices are practically mounted on circuit boards of electronic devices, for example, and used in power supply circuits (e.g., DC / DC inverters, frequency converters), motor drive circuits, etc.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2009-158787 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] In recent years, with the increasing energy efficiency and performance of electronic devices, semiconductor devices have sought to reduce power consumption and improve switching responsiveness. Reducing inductance is an effective way to achieve this. Lowering inductance helps reduce the pulse voltage applied to the switching element.

[0008] In view of the above, the object of the present invention is to provide a semiconductor device that reduces the pulse voltage applied to a switching element.

[0009] Solution for solving the problem

[0010] The semiconductor device provided by the present invention includes a first switching element having a first element main surface and a first element back surface facing opposite sides in a first direction, a second switching element having a second element main surface and a second element back surface facing opposite sides in the first direction, a first conductive member and a second conductive member mutually isolated in a second direction orthogonal to the first direction, and a capacitor having a first connection terminal and a second connection terminal. The first switching element and the second switching element are connected in series to form a bridge circuit. The first connection terminal and the second connection terminal are electrically connected to the two ends of the bridge circuit, respectively. The capacitor and the switching element are mounted on the first conductive member, and the second switching element is mounted on the second conductive member.

[0011] Invention Effects

[0012] According to the above structure, the pulse voltage applied to the switching elements (the first switching element and the second switching element) can be reduced. Attached Figure Description

[0013] Figure 1 This is a perspective view showing a semiconductor device according to the first embodiment.

[0014] Figure 2 Is Figure 1 The diagram omits the resin component in the semiconductor device.

[0015] Figure 3 This is a top view showing the semiconductor device according to the first embodiment.

[0016] Figure 4 Is Figure 3 The top view shows the resin components represented by imaginary lines.

[0017] Figure 5 Is Figure 4 The top view shows the two input terminals and the output terminal represented by imaginary lines.

[0018] Figure 6 It is Figure 5 A magnified portion of the image.

[0019] Figure 7 This is a front view showing the semiconductor device according to the first embodiment.

[0020] Figure 8 This is a bottom view showing the semiconductor device of the first embodiment.

[0021] Figure 9 This is a left-side view of the semiconductor device according to the first embodiment.

[0022] Figure 10 It is along Figure 4 A cross-sectional view along the XX line.

[0023] Figure 11 It is Figure 10 A magnified sectional view of a portion of the document.

[0024] Figure 12 This is a three-dimensional view of the signal substrate (capacitor-integrated substrate).

[0025] Figure 13 This is a top view showing the signal substrate (capacitor-integrated substrate).

[0026] Figure 14 This is a bottom view showing the signal substrate (capacitor-integrated substrate).

[0027] Figure 15 It is along Figure 13 A cross-sectional view of the XV-XV line.

[0028] Figure 16 This is a top view showing the conductor layer in a signal substrate.

[0029] Figure 17 This is a top view showing the dielectric layer in the signal substrate.

[0030] Figure 18 This is a top view showing the conductor layer in a signal substrate.

[0031] Figure 19 This is a top view of the semiconductor device according to the second embodiment, and is a diagram in which two input terminals, an output terminal, and a resin component are represented by imaginary lines.

[0032] Figure 20 This is a cross-sectional view showing the semiconductor device according to the second embodiment.

[0033] Figure 21 This is a top view showing a semiconductor device involving a variation.

[0034] Figure 22 This is a cross-sectional view of a modified semiconductor device.

[0035] Figure 23 This is a cross-sectional view of a modified semiconductor device.

[0036] Figure 24 This is a cross-sectional view showing a modified example of a signal substrate (capacitor-embedded substrate).

[0037] Figure 25 This is a top view showing a modified example of a signal substrate (capacitor-embedded substrate).

[0038] Figure 26 This is a top view showing the conductor layer in a modified example.

[0039] Figure 27 This is a top view showing the conductor layer in a modified example.

[0040] Figure 28 This is a top view showing a modified example of a signal substrate (capacitor-embedded substrate).

[0041] Figure 29 It means Figure 28 A top view of the conductor layer in the signal substrate shown.

[0042] Figure 30 It means Figure 28 A top view of the conductor layer in the signal substrate shown.

[0043] Figure 31 This is a cross-sectional view showing a modified example of a signal substrate (capacitor-embedded substrate).

[0044] Figure 32 This is a cross-sectional view showing a modified example of a signal substrate (capacitor-embedded substrate). Detailed Implementation

[0045] Preferred embodiments of the semiconductor device of the present invention will be described below with reference to the accompanying drawings. In the following description, the same or similar constituent elements are labeled with the same symbols, and repeated descriptions are omitted.

[0046] Figures 1 to 14 This refers to a semiconductor device A1 according to the first embodiment. The semiconductor device A1 includes a plurality of switching elements 10, a support substrate 20, a pair of signal substrates 30A and 30B, two input terminals 41 and 42, an output terminal 43, a plurality of signal terminals 44A to 47A, 44B to 47B, a plurality of connecting parts 50, and a resin part 60.

[0047] Figure 1 This is a three-dimensional diagram representing semiconductor device A1. Figure 2 Is Figure 1 The resin component 60 is omitted from the 3D diagram. Figure 3 This is a top view of semiconductor device A1. Figure 4 Is Figure 3 The resin component 60 is represented by an imaginary line (double-dotted line) in the top view. Figure 5 Is Figure 4 The top view shows the two input terminals 41 and 42 and the output terminal represented by imaginary lines. Figure 6 It is Figure 5 A magnified partial view. Figure 7 This is the front view of semiconductor device A1. Figure 8 This is a bottom view showing semiconductor device A1. Figure 9 This is a side view (left side view) of semiconductor device A1. Figure 10 It is along Figure 4 A cross-sectional view along the XX line. Figure 11 It is Figure 10 A magnified section view of the main part. Figure 11 In the text, connecting component 50 is omitted. Figure 12 This is a three-dimensional view of the signal substrate 30A. Figure 13 This is a top view of the signal substrate 30A. Figure 14 This is a bottom view of the signal board 30A.

[0048] For clarity, refer to three mutually orthogonal directions: the x-direction, y-direction, and z-direction. The z-direction is the thickness direction of semiconductor device A1. The x-direction is a top view of semiconductor device A1 (refer to...). Figure 3 The left and right directions in the diagram. The y-direction is the top view of semiconductor device A1 (see reference). Figure 3 The vertical direction is defined as follows: One direction in the x-direction is designated x1, and the other direction in the x-direction is designated x2. Similarly, one direction in the y-direction is designated y1, and the other direction in the y-direction is designated y2. One direction in the z-direction is designated z1, and the other direction in the z-direction is designated z2. In the following explanation, "view from above" refers to observation along the z-direction. The z-direction is an example of the "first direction," and the x-direction is an example of the "second direction."

[0049] Multiple switching elements 10 are each constructed using a semiconductor material primarily containing SiC (silicon carbide). This semiconductor material is not limited to SiC and can be Si (silicon), GaAs (gallium arsenide), or GaN (gallium nitride), etc. Wide-bandgap semiconductor materials are preferred. Each switching element 10 is, for example, a MOSFET. Each switching element 10 is not limited to a MOSFET and can be other transistors such as field-effect transistors including MISFETs (Metal-Insulator-Semiconductor FETs), bipolar transistors such as IGBTs, etc. Each switching element 10 is of the same type, for example, an n-channel MOSFET. The illustrated switching elements 10 are rectangular in top view, but the invention is not limited to this.

[0050] Multiple switching elements 10, such as Figure 11 As shown, each switching element 10 has a main surface 101 and a back surface 102. In each switching element 10, the main surface 101 and the back surface 102 are isolated from each other in the z-direction. The main surface 101 faces the z2 direction, and the back surface 102 faces the z1 direction.

[0051] Multiple switching elements 10 each have a first electrode 11, a second electrode 12, a third electrode 13, and an insulating film 14. For example... Figure 6 as well as Figure 11 As shown, a first electrode 11 and a second electrode 12 are disposed on the main surface 101 of the component. The first electrode 11 is, for example, a source electrode through which source current flows. The second electrode 12 is, for example, a gate electrode through which a gate voltage for driving each switching element 10 is applied. In top view, the first electrode 11 is larger than the second electrode 12. Figure 6 In the example shown, the first electrode 11 consists of a single region, but it can be divided into multiple regions. For example... Figure 11As shown, the third electrode 13 is disposed on the back surface 102 of the device. The second electrode 12 is, for example, the drain electrode, through which drain current flows. In the illustrated example, the third electrode 13 is substantially formed on the entire surface of the back surface 102 of the device (except for a peripheral portion with a relatively small area, the third electrode 13 is formed on the remaining portion of the back surface 102 of the device). Figure 6 as well as Figure 11 As shown, an insulating film 14 is disposed on the main surface 101 of the component. The insulating film 14 has electrical insulation properties. In top view, the insulating film 14 surrounds the first electrode 11 and the second electrode 12. The insulating film 14 insulates the first electrode 11 from the second electrode 12 in the main surface 101 of the component. The insulating film 14 is constructed by sequentially stacking layers from the main surface 101 of the component, such as a SiO2 (silicon dioxide) layer, a SiN4 (silicon nitride) layer, and a polybenzoxazole layer. The structure of the insulating film 14 is not limited to the above structure; for example, a polyimide layer can be used instead of a polybenzoxazole layer.

[0052] Each switching element 10 operates based on a predetermined signal. Specifically, if a drive signal (such as a gate voltage) is input to the second electrode 12 (gate electrode), the on and off states are switched according to the drive signal. In the on state, current flows from the third electrode 13 (drain electrode) to the first electrode 11 (source electrode), but no current flows in the off state. The frequency of the drive signal (i.e., the switching frequency of each switching element 10) is, for example, 10 kHz or higher.

[0053] The plurality of switching elements 10 includes a plurality of switching elements 10A and a plurality of switching elements 10B. Figure 6 In the example shown, semiconductor device A1 includes four switching elements 10A and four switching elements 10B. The number of switching elements 10A and 10B is not limited to this structure and can be varied according to the performance requirements of semiconductor device A1. Semiconductor device A1 is, for example, a half-bridge switching circuit. In this case, in semiconductor device A1, multiple switching elements 10A constitute the upper arm circuit, and multiple switching elements 10B constitute the lower arm circuit. Each switching element 10A and each switching element 10B are connected in series to form a bridge.

[0054] Multiple switching elements 10A, such as Figure 5 , Figure 6 , Figure 10 as well as Figure 11 As shown, it is mounted on the support substrate 20. Figure 5In the example shown, multiple switching elements 10A are arranged, for example, in the y-direction and isolated from each other. Each switching element 10A is electrically bonded to the support substrate 20 (conductive substrate 22A described later) via a conductive bonding material (not shown) (e.g., sintered metal such as sintered silver or sintered copper, metal paste such as silver or copper, or solder). When each switching element 10A is bonded to the conductive substrate 22A, its back surface 102 faces the conductive substrate 22A. Each switching element 10A is an example of a "first switching element". In each switching element 10A, the first electrode 11 is an example of a "first main surface electrode", the second electrode 12 is an example of a "drive signal input electrode", and the third electrode 13 is an example of a "first back surface electrode".

[0055] like Figure 5 , Figure 6 , Figure 10 as well as Figure 11 As shown, multiple switching elements 10B are mounted on a support substrate 20. Figure 5 In the example shown, multiple switching elements 10B are arranged, for example, in the y-direction and isolated from each other. Each switching element 10B is electrically bonded to the support substrate 20 (the conductive substrate 22B described later) via a conductive bonding material (not shown) (e.g., sintered metal such as sintered silver or sintered copper, metal paste such as silver or copper, or solder). When each switching element 10B is bonded to the conductive substrate 22B, its back surface 102 faces the conductive substrate 22B. Figure 5 In the example shown, when viewed in the x-direction, multiple switching elements 10A and multiple switching elements 10B overlap, but the invention is not limited thereto. Each switching element 10B is an example of a "second switching element". Among each switching element 10B, the first electrode 11 is an example of a "second main surface electrode", and the third electrode 13 is an example of a "second back surface electrode".

[0056] The support substrate 20 supports a plurality of switching elements 10. The support substrate 20 includes a pair of insulating substrates 21A and 21B and a pair of conductive substrates 22A and 22B.

[0057] A pair of insulating substrates 21A and 21B possess electrical insulation properties. The constituent material of each insulating substrate 21A and 21B is, for example, a ceramic with excellent thermal conductivity. AlN (aluminum nitride) is an example of such a ceramic. The insulating substrates 21A and 21B are not limited to ceramics and can be insulating resin sheets, etc. Each insulating substrate 21A and 21B is, for example, rectangular in shape when viewed from above. The pair of insulating substrates 21A and 21B are arranged in the x-direction and isolated from each other. Insulating substrate 21A is located on the x1-direction side of insulating substrate 21B.

[0058] like Figure 10As shown, each insulating substrate 21A, 21B has a main surface 211 and a back surface 212. In each insulating substrate 21A, 21B, the main surface 211 and the back surface 212 are isolated from each other in the z-direction. The main surface 211 faces the z2 direction, and the back surface 212 faces the z1 direction. The main surface 211, together with a pair of conductive substrates 22A, 22B and a plurality of switching elements 10, is covered by a resin component 60. Figure 8 As shown, the back surface 212 protrudes from the resin component 60 (the resin back surface 62 described later). A heat sink (not shown) is attached to the back surface 212.

[0059] A pair of conductive substrates 22A and 22B are metal plates. The metal plates are made of materials such as Cu (copper) or Cu alloys. The pair of conductive substrates 22A and 22B, together with two input terminals 41 and 42 and an output terminal 43, form a conduction path with the plurality of switching elements 10. Each conductive substrate 22A and 22B may be covered with silver plating. The pair of conductive substrates 22A and 22B are isolated from each other in the x-direction. Figure 5 as well as Figure 10 In the example shown, the conductive substrate 22A is located in the x1 direction closer to the conductive substrate 22B.

[0060] like Figure 10 As shown, each conductive substrate 22A and 22B has a main surface 221 and a back surface 222. In each conductive substrate 22A and 22B, the main surface 221 and the back surface 222 are isolated from each other in the z-direction. The main surface 221 faces the z2 direction, and the back surface 222 faces the z1 direction.

[0061] like Figure 10 As shown, the conductive substrate 22A is bonded to the insulating substrate 21A via a bonding member (not shown). This bonding member can be either conductive or insulating. With the conductive substrate 22A bonded to the insulating substrate 21A, the back surface 222 of the conductive substrate 22A faces the main surface 211 of the insulating substrate 21A. The conductive substrate 22A has a plurality of switching elements 10A and a signal substrate 30A mounted on its main surface 221. In this embodiment, the conductive substrate 22A is an example of a "first conductive component".

[0062] like Figure 10 As shown, the conductive substrate 22B is bonded to the insulating substrate 21B via a bonding member (not shown). This bonding member can be either conductive or insulating. With the conductive substrate 22B bonded to the insulating substrate 21B, the back surface 222 of the conductive substrate 22B faces the main surface 211 of the insulating substrate 21B. The conductive substrate 22B has a plurality of switching elements 10B and a signal substrate 30B mounted on its main surface 221. In this embodiment, the conductive substrate 22B is an example of a "second conductive component".

[0063] The structure of the support substrate 20 is not limited to the example described above. For example, two conductive substrates 22A and 22B can be bonded on an insulating substrate. In addition, a metal layer can be formed on the back surface 222 of each insulating substrate 21A and 21B. Furthermore, the shape, size, and arrangement of each pair of insulating substrates 21A and 21B and the pair of conductive substrates 22A and 22B can be appropriately varied based on the number and arrangement of the plurality of switching elements 10.

[0064] A pair of signal substrates 30A and 30B relay various signals from multiple switching elements 10 and multiple signal terminals 44A-47A and 44B-47B, respectively. Signal substrate 30A has multiple conductor layers and multiple dielectric layers stacked in its internal structure, thus functioning as a capacitor. Therefore, signal substrate 30A is a capacitor-embedded substrate. An example of the internal structure of signal substrate 30A will be described later. On the other hand, signal substrate 30B does not function as a capacitor. Signal substrate 30B is, for example, a single-layer printed circuit board. Signal substrate 30A is an example of a "capacitor".

[0065] like Figure 10 as well as Figure 11 As shown, each signal substrate 30A and 30B has a main substrate surface 301 and a back substrate surface 302. The main substrate surface 301 and the back substrate surface 302 are isolated in the z-direction. The main substrate surface 301 faces the z2 direction, and the back substrate surface 302 faces the z1 direction. Figure 11 As shown, each signal substrate 30A also has a pair of substrate sides 303 and 304. In the signal substrate 30A, the pair of substrate sides 303 and 304 are connected to both the substrate main surface 301 and the substrate back surface 302, and are sandwiched between the substrate main surface 301 and the substrate back surface 302 in the z-direction. The pair of substrate sides 303 and 304 are isolated from each other in the x-direction. The substrate side 303 faces the x1 direction, and the substrate side 304 faces the x2 direction. The substrate main surface 30 is an example of a "capacitor main surface", the substrate back surface 302 is an example of a "capacitor back surface", and the pair of substrate sides 303 and 304 are examples of a "first capacitor side" and a "second capacitor side", respectively.

[0066] like Figure 5 as well as Figure 10 As shown, signal substrate 30A includes gate layer 31A and detection layer 32A, and signal substrate 30B includes gate layer 31B and detection layer 32B.

[0067] A pair of gate layers 31A and 31B are conductive, and their constituent materials are, for example, Cu or a Cu alloy. Figure 5 As shown, a pair of gate layers 31A and 31B are strips extending in the y-direction. Figure 10As shown, a gate layer 31A is formed on the main surface 301 of the signal substrate 30A. The gate layer 31A is connected to the second electrode 12 (gate electrode) of each switching element 10A via a connecting member 50 (gate line 51 described later). Drive signals controlling the switching operation of each switching element 10A are input into the gate layer 31A. Figure 10 As shown, gate layer 31B is formed on the main surface 301 of signal substrate 30B. Gate layer 31B is connected to the second electrode 12 (gate electrode) of each switching element 10B via connecting member 50 (gate line 51 described later). Drive signals that control the switching operation of each switching element 10B are input into gate layer 31B. Gate layer 31A is an example of a "wiring layer".

[0068] A pair of detection layers 32A and 32B are conductive, and their constituent materials are, for example, Cu or a Cu alloy. Figure 5 As shown, a pair of detection layers 32A and 32B are strips extending in the y-direction. Figure 10 as well as Figure 11 As shown, the detection layer 32A and the gate layer 31A are formed together on the main substrate surface 301 of the signal substrate 30A. In top view, the detection layer 32A is located next to the gate layer 31A and isolated from it. Figure 5 In the example shown, the detection layer 32A is located near the plurality of switching elements 10A in the x-direction relative to the gate layer 31A. The detection layer 32A is located on the x2-direction side relative to the gate layer 31A. The configuration of the gate layer 31A and the detection layer 32A in the x-direction can be reversed. The detection layer 32A is connected to the first electrode 11 (source electrode) of each switching element 10A via the connecting member 50 (detection line 32 described later). Figure 10 As shown, the detection layer 32B is formed together with the gate layer 31B on the main substrate surface 301 of the signal substrate 30B. In top view, the detection layer 32B is located next to the gate layer 31B and isolated from it. Figure 5 In the example shown, the detection layer 32B is located near the plurality of switching elements 10B in the x-direction relative to the gate layer 31B. The detection layer 32B is located on the x1-direction side relative to the gate layer 31A. The configuration of the gate layer 31B and the detection layer 32B in the x-direction can be reversed. The detection layer 32B is connected to the first electrode 11 (source electrode) of each switching element 10B via the connection member 50 (detection line 52 described later).

[0069] like Figure 10 as well as Figure 11As shown, the signal substrate 30A also includes a pair of connection terminals 33 and 34 and an insulating film 39. The signal substrate 30A stores charge by applying a DC voltage between the pair of connection terminals 33 and 34. The signal substrate 30A functions as a capacitor, making the pair of connection terminals 33 and 34 external terminals. Preferably, the signal substrate 30A is designed such that its capacitance is twice the output capacitance when the aforementioned DC voltage is applied to each of the switching elements 10A or 10B. For example, the signal substrate 30A has a dimension of 8 mm in the x-direction, 27 mm in the y-direction, and 2.25 mm in the z-direction. The z-direction dimension of the signal substrate 30A is preferably 5 mm or less. The dimensions of the signal substrate 30A are not limited to the above examples. Preferably, the parasitic resistance of the signal substrate 30A is 1 Ω or less.

[0070] like Figures 10-12 As shown, the connection terminal 33 is formed by extending from the main surface 301 of the signal substrate 30A across the side surface 303 of the substrate. The connection terminal 33 is made of, for example, Cu, but is not limited to this. Figures 10-12 As shown, the connection terminal 33 includes a main surface electrode portion 331 and a side surface electrode portion 332. The main surface electrode portion 331 is formed on the main surface 301 of the substrate. The side surface electrode portion 332 is formed on the main surface 303 of the substrate. The side surface electrode portion 332 does not cover the entire side surface 303 of the substrate; the edge near the z1 direction side of the side surface 303 is exposed from the side surface electrode portion 332. The side surface electrode portion 332 is an example of a "first side surface electrode portion". Figure 13As shown, the signal substrate 30A has two end edges (y1 direction side edge and y2 direction side edge) that are isolated from each other in the y direction. The main surface electrode portion 331, the gate layer 31A, and the detection layer 32A are respectively isolated from the first direction side edge of the signal substrate 30A by a predetermined distance. (More precisely, for example, the main surface electrode portion 331 has an end edge that faces the first direction side edge of the signal substrate 30A in top view, and this end edge is isolated from the first direction side edge of the signal substrate 30A by a predetermined distance. This is also true for the gate layer 31A and the detection layer 32A. In the illustrated example, the isolation distance dy1 of the main surface electrode portion 331, the gate layer 31A, and the detection layer 32A from the first direction side edge is substantially the same, but the invention is not limited thereto. Similarly, relative to the signal substrate 30A...) At the second-direction side edge, the main surface electrode portion 331, the gate layer 31A, and the detection layer 32A are respectively disposed apart by a predetermined distance. In the illustrated example, the isolation distance dy2 of the main surface electrode portion 331, the gate layer 31A, and the detection layer 32A from the second-direction side edge is substantially the same, but the present invention is not limited thereto. Furthermore, in the illustrated example, the isolation distances dy1 and dy2 are substantially equal, but the present invention is not limited thereto, and the isolation distances dy1 and dy2 may also be different from each other.

[0071] like Figure 10 as well as Figure 11 As shown, the connection terminal 34 is formed from the back surface 302 of the signal substrate 30A across the side surface 304 of the substrate. The connection terminal 34 is made of, for example, Cu, but is not limited to this. Figure 10 as well as Figure 11 As shown, the connection terminal 34 includes a back electrode portion 341 and a side electrode portion 342. The back electrode portion 341 is formed on the back side 302 of the substrate. The side electrode portion 342 is formed on the side side 304 of the substrate. The side electrode portion 342 does not cover the entire side side 304 of the substrate; the edge near the z2 direction side of the side side 304 is exposed from the side electrode portion 342. Figure 10 as well as Figure 11 As shown, the side electrode portion 342 is bonded to the conductive substrate 22A via a conductive bonding member (e.g., sintered metal, metal paste, or solder, etc.) not shown. The side electrode portion 342 is an example of a "second side electrode portion".

[0072] like Figures 10-12As shown, the insulating film 39 covers the area near the corner where the back side 302 of the substrate connects to the side side 303 of the substrate. For example, the insulating film 39 covers the side side 303 of the substrate exposed from the connection terminal 33 and the back side 302 of the substrate exposed from the connection terminal 34. The insulating film 39 is provided to ensure insulation between the connection terminal 33 and the conductive substrate 22A. The area where the insulating film 39 is formed only needs to insulate the connection terminal 33 from the conductive substrate 22A, and is not limited to the example shown.

[0073] The two input terminals 41 and 42 are metal plates. These metal plates are made of Cu or a Cu alloy. Figures 1-5 As shown, two input terminals 41 and 42 are located in the semiconductor device A1 in the x1 direction. A power supply voltage is applied between the two input terminals 41 and 42. Input terminal 41 is the positive terminal (P terminal), and input terminal 42 is the negative terminal (N terminal). Input terminals 41 and 42 are isolated from each other. Input terminal 41 is an example of a "first input terminal," and input terminal 42 is an example of a "second input terminal."

[0074] like Figure 4 as well as Figure 5 As shown, the input terminal 41 includes a pad portion 411 and a terminal portion 412.

[0075] The pad 411 is the portion of the input terminal 41 covered by the resin component 60. For example... Figure 5 as well as Figure 10 As shown, the pad 411 is conductively bonded to the conductive substrate 22A via a conductive block 419. The pad 411 is bonded to the block 419 via a conductive bonding member (not shown), and the block 419 is bonded to the conductive substrate 22A via a conductive bonding member (not shown). This establishes a connection between the input terminal 41 and the conductive substrate 22A. The material of the block 419 is not particularly limited; for example, it can be made of Cu, Cu alloys, CuMo (copper-molybdenum) composites, or CIC (Copper-Inver-Copper) composites. The bonding between the pad 411 and the block 419, and between the block 419 and the conductive substrate 22A, is not limited to using separate conductive bonding members; it can be achieved using laser welding or ultrasonic welding. The bonding between the pad 411 and the conductive substrate 22A is not limited to the structure of the block 419; the pad 411 can be directly bonded to the conductive substrate 22A by partially bending the pad 411.

[0076] Terminal portion 412 is the part of the input terminal 41 that protrudes from the resin component 60. For example... Figure 4 As shown, the terminal portion 412 extends from the resin component 60 in the x1 direction in top view. The terminal portion 412 is, for example, rectangular in shape in top view.

[0077] like Figure 4 as well as Figure 5 As shown, the input terminal 42 includes a pad portion 421 and a terminal portion 422.

[0078] The pad 421 is the portion of the input terminal 4 covered by the resin component 60. For example... Figure 4 As shown, the pad portion 421 includes a connecting portion 421a, a plurality of extension portions 421b, and a connecting portion 421c.

[0079] like Figure 4 As shown, the connecting portion 421a is, for example, a strip extending in the y-direction. Figure 5 as well as Figure 10 As shown, the connecting portion 421a is connected to the connection terminal 33 of the signal substrate 30A via a conductive block member 428. The connecting portion 421a is connected to the block member 428 via a conductive connector (not shown), and the block member 428 is connected to the connection terminal 33 of the signal substrate 30A via a conductive connector (not shown). This establishes a connection between the input terminal 42 and the connection terminal 33. The material of the block member 428 is not particularly limited; for example, composite materials of Cu, Cu alloys, CuMo, or CIC can be used. The connection between the connecting portion 421a and the block member 428, and the connection between the block member 428 and the connection terminal 33, are not limited to using conductive connectors separately; laser welding or ultrasonic welding can also be used.

[0080] like Figure 4 As shown, the plurality of extensions 421b are, for example, strips extending from the connecting portion 421a in the x2 direction. Each extension 421b extends from the connecting portion 421a in the x direction and coincides with each switching element 10B in top view. The plurality of extensions 421b are arranged in the y direction in top view and are isolated from each other. Figure 5 as well as Figure 10 As shown, the front end portion of each extension 421b is connected to each switching element 10B via a conductive block 429. Figure 10 as well as Figure 11As shown, the front end portion of each extension 421b is joined to the block 429 via a conductive connector (not shown), and the block 429 is joined to the first electrode 11 of each switching element 10B via a conductive connector (not shown). This connects the input terminal 42 to the first electrode 11 of each switching element 10B. The material of the block 429 is not particularly limited; for example, Cu, Cu alloys, CuMo composites, CIC composites, etc., can be used. The joining of each extension 421b to each block 429, and the joining of the block 429 to the first electrode 11, is not limited to joining using conductive connectors separately; laser welding or ultrasonic welding can be used. The joining of each extension 421b to the first electrode 11 of each switching element 10B is not limited to the structure of each block 429; each extension 421b can be directly joined to the first electrode 11 of each switching element 10B by partially bending each extension 421b.

[0081] like Figure 4 As shown, the connecting part 421c is the part that connects the connecting part 421a and the terminal part 422.

[0082] Terminal portion 422 is the part of the input terminal 42 that protrudes from the resin component 60. For example... Figure 4 As shown, the terminal portion 422 extends from the resin component 60 in the x1 direction in a top view. Figure 4 As shown, terminal portion 422 is located on the y2 direction side of terminal portion 412 of input terminal 41 in top view. The top view shape of terminal portion 422 is, for example, the same as the top view shape of terminal portion 412.

[0083] Output terminal 43 is a metal plate. The material of this metal plate is, for example, Cu or a Cu alloy. Figures 1-5 As shown, output terminal 43 is located in the semiconductor device A1 in the x2 direction. Alternating current (voltage) that is switched by multiple switching elements 10 is output from this output terminal 43.

[0084] like Figure 4 As shown, the output terminal 43 includes a pad portion 431 and a terminal portion 432.

[0085] The pad 431 is the portion of the output terminal 43 covered by the resin component 60. For example... Figure 5 as well as Figure 10 As shown, the pad 431 is electrically bonded to the conductive substrate 22B via a conductive block 439. (As...) Figure 10As shown, the pad 431 is bonded to the block 439 via a conductive connector (not shown), and the block 439 is bonded to the conductive substrate 22B via a conductive connector (not shown). This connects the output terminal 43 and the conductive substrate 22B. The material of the block 439 is not particularly limited, but can include, for example, Cu, Cu alloys, CuMo composites, CIC composites, etc. The bonding between the pad 431 and the block 439, and between the block 439 and the conductive substrate 22B, is not limited to bonding using separate conductive connectors; it can be achieved through laser welding or ultrasonic welding, etc. The bonding between the pad 431 and the conductive substrate 22B is not limited to the structure of the block 439; the pad 431 can be directly bonded to the conductive substrate 22B by partially bending the pad 431.

[0086] Terminal portion 432 is the part of the output terminal 43 that protrudes from the resin component 60. For example... Figure 4 As shown, the terminal portion 432 extends from the resin component 60 in the x2 direction. The terminal portion 432 is rectangular in shape, for example, in top view.

[0087] Multiple signal terminals 44A-47A and 44B-47B are terminals used for inputting or outputting control signals in the semiconductor device A1. These control signals include, for example, signals used to control the switching operation of multiple switching elements 10. The multiple signal terminals 44A-47A and 44B-47B are of approximately the same shape. When viewed in the x-direction, the multiple signal terminals 44A-47A and 44B-47B each appear L-shaped. Figures 1 to 8 As shown, multiple signal terminals 44A-47A and 44B-47B are arranged along the x-direction. Figure 9 As shown, signal terminals 44A-47A and 44B-47B overlap when viewed in the x-direction. Figure 5 As shown, multiple signal terminals 44A to 47A are located next to the conductive substrate 22A in the y-direction when viewed from above, as... Figure 5 As shown, multiple signal terminals 44B to 47B are located next to the conductive substrate 22B in the y-direction in top view. Each signal terminal 44A to 47A, 44B to 47B protrudes, for example, from the surface of the resin component 60 facing the y1 direction (the resin side surface 633 described later). The multiple signal terminals 44A to 47A, 44B to 47B are all formed by the same lead frame.

[0088] like Figure 5 as well as Figure 6As shown, a pair of signal terminals 44A and 44B are respectively connected to a pair of detection layers 32A and 32B via a connecting component 50 (the second connecting line 54 described later). The voltage (corresponding to the source current) applied to each first electrode 11 of the plurality of switching elements 10A is detected from signal terminal 44A. Signal terminal 44A is the source signal detection terminal for the plurality of switching elements 10A. The voltage (corresponding to the source current) applied to each first electrode 11 of the plurality of switching elements 10B is detected from signal terminal 44B. Signal terminal 44B is the source signal detection terminal for the plurality of switching elements 10B.

[0089] like Figure 6 As shown, a pair of signal terminals 44A and 44B each include a pad portion 441 and a terminal portion 442. In each signal terminal 44A and 44B, the pad portion 441 is covered by a resin component 60. Through this structure, each signal terminal 44A and 44B is supported by the resin component 60. The terminal portion 442 is connected to the pad portion 441 and protrudes from the resin component 60. Each signal terminal 44A and 44B is bent within the terminal portion 442.

[0090] like Figure 5 as well as Figure 6 As shown, a pair of signal terminals 45A and 45B are respectively connected to a pair of gate layers 31A and 31B via a connecting member 50 (the first connecting line 58 described later). A drive signal (gate voltage) for driving the plurality of switching elements 10A is applied to signal terminal 45A. Signal terminal 45A is a terminal for inputting drive signals to the plurality of switching elements 10A (gate signal input terminal). A drive signal (gate voltage) for driving the plurality of switching elements 10B is applied to signal terminal 45B. Signal terminal 45B is a terminal for inputting drive signals to the plurality of switching elements 10B (gate signal input terminal).

[0091] like Figure 6 As shown, a pair of signal terminals 45A and 45B each include a pad portion 451 and a terminal portion 452. In each signal terminal 45A and 45B, the pad portion 451 is covered by a resin component 60. According to this structure, each signal terminal 45A and 45B is supported by the resin component 60. The terminal portion 452 is connected to the pad portion 451 and protrudes from the resin component 60. Each signal terminal 45A and 45B is bent within the terminal portion 452.

[0092] like Figure 5 as well as Figure 6 As shown, multiple signal terminals 46A, 46B, 47A, and 47B are not conductive with other constituent components. The semiconductor device A1 can be a structure that does not have these signal terminals 46A, 46B, 47A, and 47B.

[0093] like Figure 6As shown, a pair of signal terminals 46A and 46B each include a pad portion 461 and a terminal portion 462. In each signal terminal 46A and 46B, the pad portion 461 is covered by a resin component 60. According to this structure, each signal terminal 46A and 46B is supported by the resin component 60. The terminal portion 462 is connected to the pad portion 461 and protrudes from the resin component 60. Each signal terminal 46A and 46B is bent within the terminal portion 462. A pair of signal terminals 47A and 47B each include a pad portion 471 and a terminal portion 472. In each signal terminal 47A and 47B, the pad portion 471 is covered by a resin component 60. Through this structure, each signal terminal 47A and 47B is supported by the resin component 60. The terminal portion 472 is connected to the pad portion 471 and protrudes from the resin component 60. Each signal terminal 47A and 47B is bent within the terminal portion 472.

[0094] Multiple connecting parts 50 respectively enable electrical connection between two mutually isolated parts. For example... Figure 5 As shown, the multiple connection components 50 include multiple gate lines 51, multiple detection lines 52, a pair of first connection lines 53, a pair of second connection lines 54, and multiple lead components 55.

[0095] Multiple gate lines 51, multiple detection lines 52, a pair of first connection lines 53 and a pair of second connection lines 54 are elements referred to as "bonding lines", and their constituent materials are, for example, any one of Al (aluminum), Au (gold) and Cu.

[0096] like Figure 5 as well as Figure 6 As shown, a plurality of gate lines 51 are connected at one end (first end) to the second electrode 12 (gate electrode) of each switching element 10, and at the other end (second end) to either of a pair of gate layers 31A and 31B. The plurality of gate lines 51 include structures that connect the second electrode 12 of each switching element 10A to the gate layer 31A, and structures that connect the second electrode 12 of each switching element 10B to the gate layer 31B.

[0097] like Figure 5 as well as Figure 6 As shown, multiple detection lines 52 are connected at one end to the first electrode 11 (source electrode) of each switching element 10, and at the other end to either of a pair of detection layers 32A and 32B. Each detection line 52 includes a structure that connects the first electrode 11 of each switching element 10A to the detection layer 32A, and a structure that connects the first electrode 11 of each switching element 10B to the detection layer 32B.

[0098] like Figure 5 as well as Figure 6As shown, one of the pair of first connection lines 53 connects the gate layer 31A to the signal terminal 45A (gate signal input terminal), and the other connects the gate layer 31B to the signal terminal 45B (gate signal input terminal). One end of one first connection line 53 is bonded to the gate layer 31A, and the other end is bonded to the pad 451 of the signal terminal 45A. One end of the other first connection line 53 is bonded to the gate layer 31B, and the other end is bonded to the pad 451 of the signal terminal 45B.

[0099] like Figure 5 as well as Figure 6 As shown, one of the pair of second connecting lines 54 connects the detection layer 32A to the signal terminal 44A (source signal detection terminal), and the other connects the detection layer 32B to the signal terminal 44B (source signal detection terminal). One end of one second connecting line 54 is connected to the detection layer 32A, and the other end is connected to the pad 441 of the signal terminal 44A. One end of the other second connecting line 54 is connected to the detection layer 32B, and the other end is connected to the pad 441 of the signal terminal 44B.

[0100] Each of the multiple lead components 55 is made of a conductive material, such as any one of Al, Au, and Cu. In the semiconductor device A1, bonding wires can be used instead of individual lead components 55. Figure 5 , Figure 6 as well as Figure 11 As shown, each lead component 55 connects the first electrode 11 of each switching element 10A to the conductive substrate 22B. For example... Figure 5 as well as Figure 6 As shown, each lead component 55 is a strip extending in the x-direction in top view. Each lead component 55 is an example of a "connecting component".

[0101] like Figure 6 , Figure 10 as well as Figure 11As shown, each lead component 55 includes a first bonding portion 551, a second bonding portion 552, and a connecting portion 553. The first bonding portion 551 is a portion of each lead component 55 that is bonded to each switching element 10A. The first bonding portion 551 is bonded to the first electrode 11 of each switching element 10A via a conductive bonding member (not shown). The first bonding portion 551 coincides with the first electrode 11 of each switching element 10A in top view. The second bonding portion 552 is a portion of each lead component 55 that is bonded to a conductive substrate 22B. The second bonding portion 552 is bonded to the main surface 221 of the conductive substrate 22B via a conductive bonding member (not shown). The bonding between the second bonding portion 552 and the conductive substrate 22B can be achieved by direct bonding via laser welding or ultrasonic welding. The second bonding portion 552 coincides with the conductive substrate 22B in top view. The thickness (z-axis dimension) of the second bonding portion 552 is greater than the thickness (z-axis dimension) of the first bonding portion 551. The connecting portion 553 is the part in each lead member 55 that connects to the first joint portion 551 and the second joint portion 552. The thickness (z-direction dimension) of the connecting portion 553 is substantially the same as the thickness (z-direction dimension) of the first joint portion 551. The connecting portion 553 spans the conductive substrate 22A and the conductive substrate 22B in top view.

[0102] like Figure 4 , Figure 5 as well as Figure 10 As shown, the resin component 60 covers a plurality of switching elements 10, a support substrate 20 (however, the back surfaces 212 of each of a pair of insulating substrates 21A and 21B may be removed), a pair of signal substrates 30A and 30B, portions of terminals 41-43, 44A-47A, 44B-47B, and a plurality of connecting components 50. The resin component 60 is made of, for example, epoxy resin. Figure 4 , Figure 5 as well as Figure 10 As shown, the resin component 60 has a resin main surface 61, a resin back surface 62, and a plurality of resin side surfaces 631 to 634.

[0103] like Figure 10 As shown, the resin main surface 61 and the resin back surface 62 are isolated from each other in the z-direction. The resin main surface 61 faces the z2 direction, and the resin back surface 62 faces the z1 direction. Figure 8As shown, the resin back surface 62 is a frame-like structure surrounding the back surfaces 212 of a pair of insulating substrates 21A and 21B in a top view. The back surfaces 212 of the pair of insulating substrates 21A and 21B are exposed from the resin back surface 62. Multiple resin side surfaces 631-634 are respectively connected to both the resin main surface 61 and the resin back surface 62, and are held by these surfaces in the z-direction. Resin side surfaces 631 and 632 are isolated from each other in the x-direction. Resin side surface 631 faces the x1 direction, and resin side surface 632 faces the x2 direction. Two input terminals 41 and 42 protrude from resin side surface 631, and an output terminal 43 protrudes from resin side surface 632. Resin side surfaces 633 and 634 are isolated from each other in the y-direction. Resin side surface 633 faces the y1 direction, and resin side surface 634 faces the y2 direction. Multiple signal terminals 44A-47A and 44B-47B protrude from resin side surface 633.

[0104] like Figure 8 as well as Figure 10 As shown, the resin component 60 includes a recess 65 that is recessed in the z-direction from the resin back surface 62. As... Figure 8 As shown, the recess 65 is formed in a ring shape that surrounds the support substrate 20 in top view. Alternatively, the structure may not have the recess 65 formed on the resin component 60.

[0105] For an example of the internal structure of the signal board 30A, see [reference]. Figures 15-18 The signal substrate 30A has a predetermined internal structure in which a plurality of first conductor layers 361, a plurality of second conductor layers 362, a plurality of dielectric layers 37 and a plurality of insulating layers 38 are stacked in the z-direction.

[0106] Figure 15 It is along Figure 13 A cross-sectional view of the XV-XV line. Figure 16 This is a top view showing an example of each of the first conductor layers 361. Figure 17 This is a top view showing an example of each dielectric layer 37. Figure 18 This is a top view showing an example of each of the second conductor layers 362.

[0107] The plurality of first conductor layers 361 and the plurality of second conductor layers 362 are each made of, for example, Cu. The plurality of dielectric layers 37 are each made of, for example, resin material. The material constituting each dielectric layer 37 is not limited to resin material, but can be an insulator with a dielectric constant greater than 1, such as ceramic. Each insulating layer 38 is made of, for example, polyester film, and has a lower insulation strength than each dielectric layer 37.

[0108] like Figure 15 as well as Figure 16As shown, multiple first conductor layers 361 are respectively connected to connection terminals 33 (side electrode portions 332) formed on the side surface 303 of the substrate. The multiple first conductor layers 361 overlap each other in top view. The multiple first conductor layers 361 are electrically connected to each other through the side electrode portions 332. Each first conductor layer 361 is isolated from the connection terminal 34. Figure 16 As shown, an insulator 369 is formed around each of the first conductor layers 361 (except for the side connected to the connection terminal 33). The insulator 369 is the same as the insulating layer 38, for example, made of polyester film.

[0109] like Figure 15 as well as Figure 18 As shown, multiple second conductor layers 362 are respectively connected to connection terminals 34 (side electrode portions 342) formed on the side surface 304 of the substrate. The multiple second conductor layers 362 overlap each other in top view. The multiple second conductor layers 362 are electrically connected to each other through the side electrode portions 342. Each second conductor layer 362 is isolated from the connection terminal 33. Figure 18 As shown, in top view, an insulator 369 is formed around each of the second conductor layers 362 (except for the side connected to the connection terminal 34).

[0110] The first conductor layer 361 closest to the z2 direction side among the plurality of first conductor layers 361 is the surface layer of the signal substrate 30A on the z-direction side, and a main surface electrode portion 331 is formed on the surface of this first conductor layer 361. For example, this first conductor layer 361 and the main surface electrode portion 331 have substantially the same shape in plan view. Furthermore, the second conductor layer 362 closest to the z1 direction side among the plurality of second conductor layers 362 is the surface layer of the signal substrate 30A on the z1 direction side, and a back surface electrode portion 341 is formed on the surface of this second conductor layer 362. For example, this second conductor layer 362 and the back surface electrode portion 341 have substantially the same shape in plan view.

[0111] exist Figure 15 In the example shown, multiple dielectric layers 37 (except for the bottommost dielectric layer 37) are respectively sandwiched in the z-direction by a corresponding first conductor layer 361 and a corresponding second conductor layer 362, and connected to both the side electrode portion 332 and the side electrode portion 342 (see also...). Figure 17 The bottommost dielectric layer 37 is sandwiched in the z-direction by a corresponding first conductor layer 361 (the bottommost first conductor layer 361) and the back electrode layer 341, and is at least connected to the side electrode portion 342. For example... Figure 17 As shown, (including the bottommost first conductor layer 361) each dielectric layer 37 is connected from the end edge on the y1 direction side of the signal substrate 30A to the end edge on the y2 direction side. The z-direction dimension of each dielectric layer 37 is, for example, about 8 μm to 20 μm, but the present invention is not limited thereto.

[0112] Multiple insulating layers 38 include a structure sandwiched between two first conductor layers 361 between two adjacent dielectric layers 37 along the z-direction (in Figure 15 In the example, the structure is formed by two second conductor layers 362 sandwiched between two adjacent dielectric layers 37 along the z-direction, from the third insulating layer 38 on the main surface 301 of the substrate. Figure 15 In the example, the second insulating layer 38 is located from the main surface 301 of the substrate. Each insulating layer 38 also functions as an adhesive layer for the two first conductor layers 361 and two second conductor layers 362 that are in contact with each other on both sides in the z-direction. In top view, each insulating layer 38 overlaps with a plurality of first conductor layers 361, a plurality of second conductor layers 362, and a plurality of dielectric layers 37. In a structure different from the signal substrate 30A shown in the figure, a plurality of insulating layers 38 and insulating films 39 can be integrally formed.

[0113] like Figure 15 As shown, the insulating layer 38 closest to the z2 direction side among the plurality of insulating layers 38 is the surface layer of the signal substrate 30A on the z2 direction side, and a main electrode portion 331 is formed on the surface of this insulating layer 38. In the signal substrate 30A, since a gate layer 31A and a detection layer 32A are formed on the main surface 301 of the substrate, the surface layer on the z2 direction side is used as the insulating layer 38. In addition, the dielectric layer 37 closest to the z1 direction side among the plurality of dielectric layers 37 is the surface layer of the signal substrate 30A on the z1 direction side, and a back electrode portion 341 is formed on the surface of this dielectric layer 37.

[0114] The signal substrate 30A applies a voltage between a pair of connection terminals 33 and 34. If a potential difference is generated between each first conductor layer 361 and each second conductor layer 362, a voltage is applied to each dielectric layer 37, and charge is accumulated in each first conductor layer 361 and each second conductor layer 362. Therefore, the first conductor layers 361 and second conductor layers 362 of the signal substrate 30A, which are arranged to hold each dielectric layer 37, act as plates and function as capacitors. In this embodiment, as... Figure 15 As shown, since the dielectric layer 37 is disposed between the first conductor layer 361 closest to the z1 direction and the back electrode portion 341 among the plurality of first conductor layers 361, the back electrode portion 341 functions as a capacitor plate in the same way as the second conductor layer 362. Thus, in the signal substrate 30A, the back electrode portion 341 functions as both an external terminal and a capacitor plate.

[0115] The internal structure of the signal substrate 30A is not limited to the example described above, and a structure of a well-known multilayer capacitor (such as a multilayer ceramic capacitor) can be used. Furthermore, the number of layers (each first conductor layer 361, each second conductor layer 362, each dielectric layer 37, and each insulating layer 38) in the signal substrate 30A is not limited to... Figure 15 The example shown can be appropriately modified based on the performance (capacitance, etc.) of the capacitor used as the signal substrate 30A. The size of each layer, the constituent materials of each layer, etc., are not limited to the example described above.

[0116] The function and effect of the semiconductor device A1 constructed as described above are as follows.

[0117] Semiconductor device A1 includes a signal substrate 30A. The signal substrate 30A includes a pair of connection terminals 33 and 34, functioning as a capacitor with the connection terminals 33 and 34 as electrodes. Switching elements 10A and 10B are connected in series to form a bridge circuit. The pair of connection terminals 33 and 34 are electrically connected to the two ends of the bridge circuit. According to this structure, semiconductor device A1, with the signal substrate 30A functioning as a capacitor, forms a current path flowing through the capacitor (signal substrate 30A) and each of the switching elements 10A and 10B. Therefore, compared to a device without the signal substrate 30A, semiconductor device A1 can suppress pulse voltages applied to each of the switching elements 10A and 10B by reducing internal inductance.

[0118] In semiconductor device A1, multiple switching elements 10A and 10B each have a first electrode 11 and a third electrode 13. If each switching element 10A or 10B is, for example, a MOSFET, the first electrode 11 is the source electrode, and the third electrode 13 is the drain electrode. The connection terminal 34 of the signal substrate 30A (capacitor) is connected to the third electrode 13 of each switching element 10A via a conductive substrate 22A. The first electrode 11 of each switching element 10A is connected to the third electrode 13 of each switching element 10B via lead members 55 and the conductive substrate 22B. The third electrode 13 of each switching element 10B is connected to the connection terminal 33 of the signal substrate 30A (capacitor) via a block member 429, an input terminal 42 (pad 421), and a block member 428. According to this structure, a current path is formed from the signal substrate 30A (connection terminal 34) through the conductive substrate 22A, each switching element 10A (from the third electrode 13 to the first electrode 11), each lead component 55, the conductive substrate 22B, each switching element 10B (from the third electrode 13 to the first electrode 11), and the input terminal 42 (extension 421b), thus forming a current path flowing through the signal substrate 30A (connection terminal 33). Figure 11(The thick arrow indicates this). That is, the semiconductor device A1 reduces its internal inductance by forming this current path. Preferably, the semiconductor device A1 has an internal inductance of less than 10nH through this current path.

[0119] In the semiconductor device A1, the signal substrate 30A (capacitor) and each switching element 10A are bonded together to the conductive substrate 22A. According to this structure, when the semiconductor device A1 is energized, the heat emitted by the signal substrate 30A diffuses through the conductive substrate 22A and is released to the outside through the conductive substrate 22A and the insulating substrate 21A. As described above, since each switching element 10A is also bonded to the conductive substrate 22A, the heat emitted from each switching element 10A also diffuses through the conductive substrate 22A and is released to the outside through the conductive substrate 22A and the insulating substrate 21A. That is, the heat dissipation path of the signal substrate 30A is the same as the heat dissipation path of each switching element 10A. Therefore, the semiconductor device A1 can improve the heat dissipation performance of the signal substrate 30A.

[0120] In semiconductor device A1, signal substrate 30A has connection terminals 33 and a gate layer 31A formed on the main surface 301 of the substrate. Additionally, connection terminals 34 are formed on the back surface 302 of the substrate. According to this structure, signal substrate 30A, which relays drive signals, functions as a capacitor. In a semiconductor device different from semiconductor device A1, consider a case where capacitor components are connected across two input terminals 41 and 42. However, in this case, the thickness of resin component 60 increases because capacitor components are mounted on the two input terminals 41 and 42. According to semiconductor device A1, the thickness of resin component 60 can be reduced, and the size of semiconductor device A1 can be prevented.

[0121] In the semiconductor device A1, the dielectric layer 37 of the signal substrate 30A is made of, for example, a resin material. It is known that ceramic is used in the dielectric layer of conventional multilayer capacitors. However, the use of ceramic in the dielectric layer raises concerns about reduced reliability due to cracking and other issues. On the other hand, the dielectric layer 37 in this disclosure, due to its aforementioned structure, can suppress cracking and other defects, thus offering higher reliability compared to the ceramic method.

[0122] In semiconductor device A1, the dielectric layer 37 of signal substrate 30A is sandwiched between two conductor layers (first conductor layer 361 and second conductor layer 362) with different potentials, and the insulating layer 38 is sandwiched between two conductor layers (two first conductor layers or two second conductor layers 362) with the same potential. Therefore, when a voltage is applied to a pair of connection terminals 33, 34, and a potential difference is generated between the plurality of first conductor layers 361 and the plurality of second conductor layers 362, a voltage is applied in the thickness direction (z-direction) of dielectric layer 37, but no voltage is applied in the thickness direction (z-direction) of insulating layer 38. Therefore, the withstand voltage (insulation withstand strength) of insulating layer 38 can be disregarded. That is, the signal substrate 30A in semiconductor device A1 can suppress the reduction of insulation withstand strength.

[0123] Figure 19 as well as Figure 20 This refers to the semiconductor device A2 that relates to the second embodiment. Figure 19 This is a top view showing semiconductor device A2. Figure 19 In the diagram, two input terminals 41 and 42, an output terminal 43, and a resin component 60 are represented by imaginary lines (double-dotted lines). Figure 20 This is a cross-sectional view of semiconductor device A2, which corresponds to the view in semiconductor device A1. Figure 10 The cross-section shown.

[0124] like Figure 19 as well as Figure 20 As shown, the support substrate 20 of semiconductor device A2 differs from that of semiconductor device A1. The support substrate 20 of semiconductor device A2 is a so-called DBC (Direct Bonded Copper) substrate. However, the support substrate 20 may not be a DBC substrate, but rather a DBA (Direct Bonded Aluminum) substrate. The support substrate 20 includes an insulating substrate 23, a pair of main surface metal layers 24A and 24B, and a back surface metal layer 25.

[0125] The insulating substrate 23 is the same as that of insulating substrates 21A and 21B, for example, made of ceramic with excellent thermal conductivity. The insulating substrate 23 is, for example, rectangular in shape when viewed from above. The insulating substrate 23 has a main surface 231 and a back surface 232. The main surface 231 and the back surface 232 are separated in the z-direction. The main surface 231 faces the z2 direction, and the back surface 232 faces the z1 direction.

[0126] like Figure 20As shown, a pair of main surface metal layers 24A and 24B are formed on the main surface 231 of the insulating substrate 23. The constituent material of each of the pair of main surface metal layers 24A and 24B is, for example, Cu. This constituent material may not be Cu, but Al. The pair of main surface metal layers 24A and 24B are isolated in the x-direction. The main surface metal layer 24A is located on the x1-direction side of the main surface metal layer 24B. The main surface metal layer 24A is the same as the conductive substrate 22A, and is equipped with a plurality of switching elements 10A and a signal substrate 30A, etc. The main surface metal layer 24B is the same as the conductive substrate 22B, and is equipped with a plurality of switching elements 10B and a signal substrate 30B, etc. Each main surface metal layer 24A and 24B is thinner than each conductive substrate 22A and 22B. In this embodiment, the main surface metal layer 24A is an example of a "first conductive component," and the main surface metal layer 24B is an example of a "second conductive component."

[0127] A back metal layer 25 is formed on the back surface 232 of the insulating substrate 23. The material of the back metal layer 25 is the same as that of the main surface metal layers 24A and 24B. The back metal layer 25 can be covered by the resin component 60 or exposed from the resin component 60 (resin back surface 62) with its z1-oriented surface.

[0128] The structure of the support substrate 20 is not limited to the examples described above. For example, instead of an insulating substrate 23, each of the pair of main surface metal layers 24A and 24B may be divided. That is, it may be divided into two insulating substrates, similar to the semiconductor device A1, with a pair of main surface metal layers 24A and 24B formed on each insulating substrate. Alternatively, instead of a back surface metal layer 25, it may be divided into two back surface metal layers. In this case, the two back surface metal layers are isolated in the x-direction and overlap the pair of main surface metal layers 24A and 24B in top view. Furthermore, for example, the pair of conductive substrates 22A and 22B may be mounted on the pair of main surface metal layers 24A and 24B respectively.

[0129] Semiconductor device A2 can also achieve the same effect as semiconductor device A1.

[0130] In the first and second embodiments, examples are shown where the signal substrate 30A does not include the insulating film 39, but this disclosure is not limited thereto. The signal substrate 30A may not include the insulating film 39. In this case, as Figure 21 as well as Figure 22 As shown, in the semiconductor device A1, an opening 229 can be provided on the main surface 221 of the conductive substrate 22A. The opening 229 coincides with the side electrode portion 332 of the connection terminal 33 in a top view. Figure 22In the example shown, an opening 229 is provided on the main surface 221 of the conductive substrate 22A by forming a groove that is recessed in the z-direction from the main surface 221 of the conductive substrate 22A. Alternatively, instead of a groove, a through hole can be formed that extends through the conductive substrate 22A in the z-direction. The presence of this opening 229 increases the isolation distance between the conductive substrate 22A and the connection terminal 33 (side electrode portion 332), ensuring insulation between the conductive substrate 22A and the connection terminal 33. The main surface 221 of the conductive substrate 22A is an example of a "conductive component main surface." Figure 23 As shown, in semiconductor device A2, an opening 249 can be provided on the surface of the main metal layer 24A facing the z2 direction. This opening 249 is the same as opening 229, and in top view includes a side electrode portion 332 for connecting the terminal 33. Figure 23 In the example shown, an opening 249 is provided on the surface of the main metal layer 24A facing the z2 direction by forming a through hole that penetrates the main metal layer 24A in the z-direction. Instead of a through hole, a groove can be formed that is recessed from the z2 direction of the main metal layer 24A towards the z-direction. The presence of this opening 249 increases the isolation distance between the main metal layer 24A and the connecting terminal 33 (side electrode portion 332), ensuring insulation between the main metal layer 24A and the connecting terminal 33 (side electrode portion 332).

[0131] In the signal substrate 30A relating to the first and second embodiments, the back electrode portion 341 of the connection terminal 34 is shown to function as an external terminal of the signal substrate 30A and as a capacitor plate, but the present invention is not limited thereto. For example, such as Figure 24 As shown, the rear electrode portion 341 can function as an external terminal instead of a capacitor plate. Specifically, as... Figure 24 As shown, the surface layer on the back side 302 of the signal substrate 30A is composed of an insulating layer 38. Therefore, the back electrode portion 341 does not function as a capacitor plate, but only as an external terminal that is connected to a plurality of second conductor layers 362 through the side electrode portion.

[0132] The top view shapes of the pair of gate layers 31A, 31B and the pair of detection layers 32A, 32B are not limited to the examples described above (see reference). Figure 5 Hereinafter, the top view shapes of the pair of gate layers 31A and 31B and the pair of detection layers 32A and 32B relating to the modified example will be described. Hereinafter, the signal substrate 30A (gate layer 31A and detection layer 32A) will be described by way of example, and the signal substrate 30B (gate layer 31B and detection layer 32B) will also be constructed in the same way.

[0133] Figure 25This is a top view of a signal substrate 30A including a gate layer 31A and a detection layer 32A, which are shown in the modified example. Figure 25 The diagram also shows multiple switching elements 10A and two signal terminals 44A and 45A.

[0134] like Figure 25 As shown, the gate layer 31A includes a strip-shaped portion 311 and a plurality of hook-shaped portions 312. The strip-shaped portion 311 extends in the y-direction. The first connecting line 53 is joined to the strip-shaped portion 311 near the edge of each signal terminal 44A, 45A in the y-direction. The plurality of hook-shaped portions 312 protrude from the strip-shaped portion 311 and are L-shaped in top view. The portion of the front end of each hook-shaped portion 312 (connected to the opposite side of the strip-shaped portion 311) of each gate line 51 and each hook-shaped portion 312. The plurality of hook-shaped portions 312 are located on the side of the strip-shaped portion 311 where the first connecting line 53 is joined. Figure 25 In the example (y1 direction side), the longer the portion extending in the y direction, the more likely it is to be extended. According to this variation, it is possible to substantially equalize the distance from the signal terminal 45A through the first connection line 53, the gate layer 31A, and each gate line 51 to the second electrode 12 of each switching element 10A. Figure 25 In the example, the gate line 51 of the switching element 10A closest to the y2 direction is engaged with the strip portion 311, but the present invention is not limited to this, and can be engaged with the newly added hook portion 312 in the same way as other gate lines 51.

[0135] like Figure 25 As shown, the detection layer 32A is the same as the gate layer 31A, including a strip portion 321 and a plurality of hook portions 322. The strip portion 321 extends in the y-direction. The second connecting line 54 is joined to the strip portion 321 near the edge of each signal terminal 44A, 45A in the y-direction. The plurality of hook portions 322 protrude from the strip portion 321 and are L-shaped in top view. Each detection line 52 is joined to the front end of each hook portion 322 (the side opposite to the strip portion 321). The plurality of hook portions 322 are joined closer to the side of the strip portion 321 where the second connecting line 54 is joined ( Figure 25 In the example (y1 direction side), the longer the portion extending in the y direction, the more effective the modification. According to this variation, it is possible to substantially equalize the distance from the signal terminal 44A through the second connecting line 54, the detection layer 32A, and each detection line 52 to the first electrode 11 of each switching element 10A. Figure 25 In the example shown, the detection line 52 that engages with the switch element 10A closest to the y2 direction is engaged with the strip portion 321, but the invention is not limited to this, and can be engaged with the newly added hook portion 322 in the same way as other detection lines 52.

[0136] In the signal substrate 30A relating to the first and second embodiments, the top view shape of each first conductor layer 361 is not limited to... Figure 16 The example shown. For example, the top view shape of each first conductor layer 361 could be... Figure 26 The shape shown. Figure 26 Each of the first conductor layers 361 shown includes, in top view, a plurality of electrode pattern portions 361a, a plurality of neck pattern portions 361b, and a connecting portion 361c. The plurality of electrode pattern portions 361a are rectangular in shape in top view. The plurality of electrode pattern portions 361a are isolated from each other and arranged in the y-direction. The plurality of neck pattern portions 361b are respectively connected to each electrode pattern portion 361a and the connecting portion 361c. The y-direction dimension of each neck pattern portion 361b is smaller than that of each electrode pattern portion 361a. The connecting portion 361c extends in the y-direction. The connecting portion 361c connects to each neck pattern portion 361b and the side electrode portion 332 (connecting terminal 33). For example, if a defect is locally generated in the dielectric layer 37, the insulation of that portion is reduced. Due to the reduced insulation in the defective portion, current flows between the first conductor layer 361 and the second conductor layer 362 through the defective portion. That is, a short circuit occurs between the first conductor layer 361 and the second conductor layer 362, reducing the capacitor's function. However, according to a modified example, the first conductor layer 361 includes a mirror pattern portion 361b. The neck pattern portion 361b heats up due to current concentration, causing it to break. Therefore, if a localized defect occurs in the dielectric layer 37 as described above, the current flowing through the electrode pattern portion 361a connected to the defective portion increases. As a result, current concentration occurs in the neck pattern portion 361b connected to the electrode pattern portion 361a, causing the neck pattern portion 361b to break. That is, the current in the electrode pattern portion 361a connected to the defective portion is cut off. Therefore, since there is no defective portion and the first conductor layer 361 and the second conductor layer 362 are connected, adverse conditions caused by localized defects in the dielectric layer 37 (such as the reduced capacitor function described above) can be suppressed. The top view shape of each second conductor layer 362 is not limited to... Figure 18 The example shown can be compared with Figure 26 The top view shapes of each of the first conductor layers 361 shown are identical. That is, each of the second conductor layers 362 can be configured with... Figure 26 The first conductor layer 361 shown similarly includes multiple electrode pattern portions, multiple neck pattern portions, and connecting portions.

[0137] In addition, the top view shape of each first conductor layer 361 can be Figure 27 The shape shown. Figure 27In the top view, each of the first conductor layers 361 does not form insulators 369 at both ends on the y-direction side, but connects to the end edge on the y2-direction side of the signal substrate 30A. According to this variation, even if the dielectric layer 37 in contact with the first conductor layer 361 is thin, the dielectric layer 37 can be supported by each of the first conductor layers 361. The top view shape of each of the second conductor layers 362 can also be similar to... Figure 27 The top view shapes of each of the first conductor layers 361 shown are identical. That is, each of the second conductor layers 362 and... Figure 27 The first conductor layer 361 shown is identical, and in top view, insulators 369 are not formed at both ends on the y-direction side, connecting the end edge on the y2-direction side of the signal substrate 30A to the end edge on the y1-direction side. Both the first conductor layer 361 and the second conductor layer 362 are... Figure 27 In the structure shown, each first conductor layer 361 and each second conductor layer 362 are exposed on both sides of the signal substrate 30A in the y-direction direction. Therefore, there is a possibility that each first conductor layer 361 and each second conductor layer 362 may short-circuit along these sides. To suppress this short circuit, an insulating film can be formed on both sides of the signal substrate 30A in the y-direction direction.

[0138] In the signal substrate 30A relating to the first and second embodiments, an example is shown where the side electrode portion 332 of the connection terminal 33 is formed on the substrate side surface 303 (the side surface facing the x1 direction) and the side electrode portion 342 of the connection terminal 34 is formed on the substrate side surface 304 (the side surface facing the x2 direction), but this disclosure is not limited thereto. For example, such as Figure 28 As shown, two side electrode portions 332 and 342 can be formed on the side facing the y1 direction and the side facing the y2 direction. Figure 28 In the example shown, the connection terminal 33 is formed from the main surface 301 of the substrate across the side facing the y2 direction. That is, the side electrode portion 332 is formed on the surface of the signal substrate 30A facing the y2 direction. Conversely, the connection terminal 34 is formed from the back surface 302 of the substrate across the side facing the y1 direction. That is, the side electrode portion 342 is formed on the surface of the signal substrate 30A facing the y1 direction. Alternatively, the side electrode portion 332 can be formed on the surface facing the y1 direction, and the side electrode portion 342 can be formed on the surface facing the y2 direction. Figure 28 In the signal substrate 30A, the top view shapes of each first conductor layer 361 and each second conductor layer 362 are as follows: Figure 29 as well as Figure 30 Each of them is shown as a rectangular shape that is longer in the y-direction. Figure 28 The example shown also includes Figure 13 The examples shown are the same; for instance, isolation distances dy1 and dy2 are essentially the same, but they are not limited to this and can also be different.

[0139] In the signal substrate 30A relating to the first and second embodiments, the case is illustrated where the main surface electrode portion 331 of the connection terminal 33, the gate layer 31A, and the detection layer 32A are directly formed on the main surface 301 of the substrate (the surface insulating layer 38), but this disclosure is not limited thereto. For example, as Figure 31 As shown, the main electrode portion 331, gate layer 31A, and detection layer 32A of the connection terminal 33 can be formed on the main surface 301 of the substrate through the insulating member 309. Such a structure can also be appropriately applied to the signal substrate 30A involving the above-described modifications.

[0140] In both the first and second embodiments, the internal structure (layered structure) of the signal substrate 30A is not limited to... Figure 15 The example shown. Hereinafter, the laminated structure of the signal substrate 30A involving the modified example will be referred to. Figure 32 Please provide an explanation. Figure 32 This is a cross-sectional view showing the laminated structure of the signal substrate 30A, which involves a modified example. Figure 15 The cross-section shown corresponds to the one depicted.

[0141] like Figure 32 As shown, the stacked structure of the signal substrate 30A in the modified example is a structure in which a core layer 35, a plurality of first conductor layers 361, a plurality of second conductor layers 362, and a plurality of dielectric layers 37 are stacked in the z direction.

[0142] The core layer 35 is made of an insulating material, such as FR4 (Flame Retardant Type 4). FR4 is a structure made of epoxy resin impregnated in fiberglass cloth and then heat-cured. Figure 32 As shown, the core layer 35 is disposed at the center in the z-direction of the signal substrate 30A. Insulating layers 38 are formed on both sides of the core layer 35 in the z-direction. The insulating layers 38 are, for example, made of polyester film. The insulating layers 38 may not be formed. Figure 32 As shown, on both sides of the core layer 35 in the z direction, each of the plurality of first conductor layers 361 and each of the plurality of second conductor layers 362 sandwich each of the plurality of dielectric layers 37 and are stacked in sequence.

[0143] exist Figure 32 In the signal substrate 30A shown, since the first conductor layer 361 and the second conductor layer 362 sandwich the dielectric layer 37, the first conductor layer 361 and each of the second conductor layers 362 function as the plates of a capacitor. Therefore, Figure 32 The signal board 30A shown also functions as a capacitor.

[0144] In the first and second embodiments, each signal terminal 44A and 44B is shown as a source signal detection terminal and each signal terminal 45A and 45B is a gate signal input terminal, but this disclosure is not limited thereto. Depending on the connection of each first connection line 53 and each second connection line 54, any one of each signal terminal 44A to 47A and 44B to 47B can be either a source signal detection terminal or a gate signal input terminal.

[0145] The semiconductor device of the present invention is not limited to the embodiments and variations described above. The specific structure of each part of the semiconductor device of the present invention can be freely changed to various types. For example, the semiconductor device of the present invention includes embodiments relating to the following appendices.

[0146] Appendix 1. A semiconductor device comprising:

[0147] A first switching element having a first element main surface facing opposite sides in a first direction and a first element back surface;

[0148] A second switching element having a second element main surface facing the opposite side in the aforementioned first direction and a second element back surface;

[0149] A first conductive component and a second conductive component that are mutually isolated in a second direction orthogonal to the first direction; and

[0150] A capacitor having a first connection terminal and a second connection terminal,

[0151] The first switching element and the second switching element are connected in series to form a bridge circuit.

[0152] The first connection terminal and the second connection terminal are respectively electrically connected to the two ends of the bridge.

[0153] The aforementioned capacitor and the aforementioned first switching element are mounted on the aforementioned first conductive component.

[0154] The second switching element is mounted on the second conductive component.

[0155] Note 2. The semiconductor device according to Note 1,

[0156] The capacitor described above has a capacitor main surface and a capacitor back surface that are isolated in the first direction.

[0157] The aforementioned first connection terminal includes a main surface electrode portion formed on a portion of the main surface of the capacitor.

[0158] The second connection terminal includes a back electrode portion formed on a portion of the back side of the capacitor.

[0159] Note 3. The semiconductor device according to Note 2,

[0160] The capacitor further comprises a first capacitor side and a second capacitor side that are mutually isolated in an orthogonal direction orthogonal to the first direction.

[0161] The first capacitor side and the second capacitor side are respectively connected to the main surface of the capacitor and the back surface of the capacitor.

[0162] The aforementioned first connection terminal also includes a first side electrode portion connected to the aforementioned main surface electrode portion and formed on a portion of the side surface of the aforementioned first capacitor.

[0163] The second connection terminal also includes a second side electrode portion connected to the back electrode portion and formed on a portion of the side of the second capacitor.

[0164] Note 4. The semiconductor device according to Note 3,

[0165] The orthogonal direction mentioned above is consistent with the second direction mentioned above.

[0166] Note 5. The semiconductor device according to Note 3 or 4,

[0167] The capacitor is provided with an insulating film that insulates the first side electrode portion from the first conductive component.

[0168] Note 6. The semiconductor device according to Note 3 or 4, characterized in that,

[0169] The first conductive component has a conductive component main surface that faces the same direction as the capacitor main surface in the first direction.

[0170] Viewed in the first direction, an opening including the first side electrode portion is formed on the main surface of the conductive component.

[0171] Note 7. The semiconductor device according to any one of Notes 3 to 6,

[0172] The capacitor described above includes a plurality of first conductor layers, a plurality of second conductor layers, and a plurality of dielectric layers stacked in the first direction.

[0173] The aforementioned plurality of first conductor layers are connected to the aforementioned first side electrode portion.

[0174] The aforementioned plurality of second conductor layers are connected to the aforementioned second side electrode portion.

[0175] Each of the plurality of dielectric layers is sandwiched between one of the plurality of first conductor layers and one of the plurality of second conductor layers.

[0176] Note 8. The semiconductor device according to Note 7,

[0177] The capacitor described above includes a plurality of insulating layers stacked in the first direction.

[0178] The plurality of insulating layers include a first insulating layer and a second insulating layer. The first insulating layer is sandwiched between two adjacent dielectric layers along the first direction by two first conductor layers, and the second insulating layer is sandwiched between two adjacent dielectric layers along the first direction by two second conductor layers.

[0179] Note 9. The semiconductor device according to any one of Notes 3 to 8,

[0180] The first switching element further includes a drive signal input electrode formed on the main surface of the first element and receiving a drive signal.

[0181] The capacitor also includes a wiring layer formed on the main surface of the capacitor and isolated from the electrode portion of the main surface.

[0182] The drive signal for the first switching element is input into the wiring layer.

[0183] Note 10. The semiconductor device according to Note 9,

[0184] The aforementioned wiring layer is formed on the main surface of the capacitor, separated by an insulating component.

[0185] Note 11. The semiconductor device according to any one of Notes 1 to 10,

[0186] The switching frequency of each of the first and second switching elements is 10 kHz or higher.

[0187] Note 12. The semiconductor device according to any one of Notes 1 to 11,

[0188] The inductance of the path through which the current flows through the capacitor, the first switching element, and the second switching element is 10nH or less.

[0189] Note 13. The semiconductor device according to any one of Notes 1 to 12,

[0190] The first switching element and the second switching element are made of wide-bandgap semiconductor material.

[0191] Note 14. The semiconductor device according to Note 13,

[0192] The wide bandgap semiconductor material mentioned above is SiC.

[0193] Note 15. The semiconductor device according to any one of Notes 1 to 14,

[0194] The first switching element includes a first main surface electrode formed on the main surface of the first element and a first back surface electrode formed on the back surface of the first switching element.

[0195] The second switching element includes a second main surface electrode formed on the main surface of the second element and a second back surface electrode formed on the back surface of the second element.

[0196] The aforementioned first back electrode is bonded to the aforementioned first conductive component.

[0197] The second back electrode is coupled to the second conductive component.

[0198] The second connecting terminal is engaged with the first conductor component.

[0199] The first main surface electrode is connected to the second conductive component.

[0200] The second main surface electrode is connected to the first connection terminal.

[0201] Note 16. The semiconductor device according to Note 15,

[0202] It also has:

[0203] The first input terminal is connected to the first back electrode via the first conductive component;

[0204] A second input terminal that is connected to the aforementioned second main surface electrode and the aforementioned first connection terminal;

[0205] The output terminal is connected to the second back electrode via the second conducting component; and

[0206] A connecting component that connects the first main surface electrode and the second conductive component.

[0207] Note 17. The semiconductor device according to Note 16,

[0208] It also includes a resin component covering the first switching element and the second switching element.

[0209] A portion of each of the aforementioned first input terminal, the aforementioned second input terminal, and the aforementioned output terminal is exposed from the aforementioned resin component.

[0210] Note 18. The semiconductor device according to any one of Notes 1 to 17,

[0211] It also has:

[0212] An additional first switching element mounted on the aforementioned first conductive component and connected in parallel to the aforementioned first switching element; and

[0213] An additional second switching element is mounted on the second conductive component and connected in parallel to the second switching element.

[0214] Symbol Explanation

[0215] A1, A2—Semiconductor devices; 10, 10A, 10B—Switching elements; 101—Element main surface; 102—Element back surface; 11—First electrode; 12—Second electrode; 13—Third electrode; 14—Insulating film; 20—Support substrate; 21A, 21B—Insulating substrate; 211—Main surface; 212—Back surface; 22A, 22B—Conductive substrate; 221—Main surface; 222—Back surface; 229—Opening; 23—Insulating substrate; 231—Main surface; 232—Back surface; 24A, 24B—Main surface metal layer. 249—Opening; 25—Back metal layer; 30A, 30B—Signal substrate; 301—Main surface of substrate; 302—Back surface of substrate; 303, 304—Side surface of substrate; 309—Insulating component; 31A, 31B—Gate layer; 311—Strip section; 312—Hook section; 32A, 32B—Detection layer; 321—Strip section; 322—Hook section; 33, 34—Connecting terminal; 331—Main surface electrode section; 332—Side electrode section; 341—Back electrode section; 342—Side electrode section; 35—Core layer. 361—First conductor layer, 361a—Electrode pattern portion, 361b—Neck pattern portion, 361c—Connecting portion, 362—Second conductor layer, 369—Insulator, 37—Dielectric layer, 38—Insulator layer, 39—Insulating film, 41, 42—Input terminals, 411, 421—Pad portions, 412, 422—Terminal portions, 421a—Connecting portion, 421b—Extension portion, 421c—Connecting portion, 419, 428, 429—Block-shaped parts, 43—Output terminal, 431—Pad portion, 432—Terminal portion, 439 —block-shaped component, 44A~47A, 44B~47B—signal terminals, 441, 451, 461, 471—pad portion, 442, 452, 462, 472—terminal portion, 50—connecting component, 51—gate line, 52—detection line, 53—first connecting line, 54—second connecting line, 55—lead component, 551—first joint portion, 552—second joint portion, 553—communication portion, 60—resin component, 61—resin main surface, 62—resin back surface, 631~634—resin side surface, 65—recess.

Claims

1. A semiconductor device, characterized in that, have: A first switching element having a first element main surface facing opposite sides in a first direction and a first element back surface; A second switching element having a second element main surface facing the opposite side in the aforementioned first direction and a second element back surface; The first conductive component and the second conductive component are mutually isolated in a second direction orthogonal to the first direction described above; A capacitor having a first connection terminal and a second connection terminal; A first conductive block that engages with the aforementioned first connecting terminal; The second conductive block that is coupled to the second switching element described above; and The connecting portion that connects the first conductive block and the second conductive block. The first switching element and the second switching element are connected in series to form a bridge circuit. The first connection terminal and the second connection terminal are respectively electrically connected to the two ends of the bridge. The aforementioned capacitor and the aforementioned first switching element are mounted on the aforementioned first conductive component. The second switching element is mounted on the second conductive component.

2. The semiconductor device according to claim 1, characterized in that, The capacitor described above has a capacitor main surface and a capacitor back surface that are isolated in the first direction. The aforementioned first connection terminal includes a main surface electrode portion formed on a portion of the main surface of the capacitor. The second connection terminal includes a back electrode portion formed on a portion of the back side of the capacitor.

3. The semiconductor device according to claim 2, characterized in that, The capacitor further comprises a first capacitor side and a second capacitor side that are mutually isolated in an orthogonal direction orthogonal to the first direction. The first capacitor side and the second capacitor side are respectively connected to the main surface of the capacitor and the back surface of the capacitor. The aforementioned first connection terminal also includes a first side electrode portion connected to the aforementioned main surface electrode portion and formed on a portion of the side surface of the aforementioned first capacitor. The second connection terminal also includes a second side electrode portion connected to the back electrode portion and formed on a portion of the side of the second capacitor.

4. The semiconductor device according to claim 3, characterized in that, The orthogonal direction mentioned above is consistent with the second direction mentioned above.

5. The semiconductor device according to claim 3 or 4, characterized in that, The capacitor is provided with an insulating film that insulates the first side electrode portion from the first conductive component.

6. The semiconductor device according to claim 3 or 4, characterized in that, The first conductive component has a conductive component main surface that faces the same direction as the capacitor main surface in the first direction. Viewed in the first direction, an opening including the first side electrode portion is formed on the main surface of the conductive component.

7. The semiconductor device according to claim 3, characterized in that, The capacitor described above includes a plurality of first conductor layers, a plurality of second conductor layers, and a plurality of dielectric layers stacked in the first direction. The aforementioned plurality of first conductor layers are connected to the aforementioned first side electrode portion. The aforementioned plurality of second conductor layers are connected to the aforementioned second side electrode portion. Each of the plurality of dielectric layers is sandwiched between a first conductor layer among the plurality of first conductor layers and a second conductor layer among the plurality of second conductor layers.

8. The semiconductor device according to claim 7, characterized in that, The capacitor described above includes a plurality of insulating layers stacked in the first direction. The plurality of insulating layers include a first insulating layer and a second insulating layer. The first insulating layer is sandwiched between two adjacent dielectric layers along the first direction by two first conductor layers, and the second insulating layer is sandwiched between two adjacent dielectric layers along the first direction by two second conductor layers.

9. The semiconductor device according to claim 3, characterized in that, The first switching element further includes a drive signal input electrode formed on the main surface of the first element and receiving a drive signal. The capacitor also includes a wiring layer formed on the main surface of the capacitor and isolated from the electrode portion of the main surface. The drive signal for the first switching element is input into the wiring layer.

10. The semiconductor device according to claim 9, characterized in that, The aforementioned wiring layer is formed on the main surface of the capacitor, separated by an insulating component.

11. The semiconductor device according to claim 1, characterized in that, The switching frequency of each of the first and second switching elements is 10 kHz or higher.

12. The semiconductor device according to claim 1, characterized in that, The inductance of the path through which the current flows through the capacitor, the first switching element, and the second switching element is less than 10nH.

13. The semiconductor device according to claim 1, characterized in that, The first switching element and the second switching element are formed of a wide-bandgap semiconductor material.

14. The semiconductor device according to claim 13, characterized in that, The wide bandgap semiconductor material mentioned above is SiC.

15. The semiconductor device according to claim 1, characterized in that, The first switching element includes a first main surface electrode formed on the main surface of the first element and a first back surface electrode formed on the back surface of the first element. The second switching element includes a second main surface electrode formed on the main surface of the second element and a second back surface electrode formed on the back surface of the second element. The aforementioned first back electrode is bonded to the aforementioned first conductive component. The second back electrode is coupled to the second conductive component. The second connection terminal is engaged with the first conductive component. The first main surface electrode is connected to the second conductive component. The second main surface electrode is connected to the first connection terminal.

16. The semiconductor device according to claim 15, characterized in that, It also has: The first input terminal is connected to the first back electrode via the first conductive component; A second input terminal that is connected to the aforementioned second main surface electrode and the aforementioned first connection terminal; The output terminal is connected to the second back electrode via the second conductive component; and A connecting component that connects the first main surface electrode and the second conductive component.

17. The semiconductor device according to claim 16, characterized in that, It also includes a resin component covering the first switching element and the second switching element. A portion of each of the aforementioned first input terminal, the aforementioned second input terminal, and the aforementioned output terminal is exposed from the aforementioned resin component.

18. The semiconductor device according to claim 1, characterized in that, It also has: An additional first switching element mounted on the aforementioned first conductive component and connected in parallel to the aforementioned first switching element; and An additional second switching element is mounted on the second conductive component and connected in parallel to the second switching element.

19. The semiconductor device according to claim 16, characterized in that, The aforementioned connecting component has a plurality of first connecting components made of a conductive material. The aforementioned plurality of first connecting components connect the aforementioned first main surface electrode and the aforementioned second conductive component.

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