Temperature Detection Circuit with Adjustable Output, Chip, Device, and Vehicle Having the Same

Abstract

The present invention relates to the technical field of electronic appliances, and provides a temperature detection circuit with adjustable output, a chip, a device, and a vehicle having the same. The temperature detection circuit includes a current control module and a triode; a first end of the current control module is connected to a power supply, a second end of the current control module is grounded, a third end of the current control module is connected to a first end of the triode and an output end of the triode, and a second end and a third end of the triode are both grounded; the current control module is configured to control a first current passing through the triode; the triode is configured to convert a temperature value of the circuit into a voltage value and output it according to the first current. By using the temperature detection circuit with adjustable output of the present invention, the function of detecting the working temperature of the chip on-chip can be realized.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic appliances, and particularly to a temperature detection circuit with adjustable output, a chip, a device, and a vehicle having the same. Background Art

[0002] When the chip is at different operating temperatures, the performance of each module inside the chip will be significantly affected. In order to optimize the product performance more, it is necessary to adjust the operating mode of the internal modules of the chip according to different chip temperatures, so that the chip can achieve the best performance at different operating temperatures. Therefore, there is an urgent need for a circuit that can detect the operating temperature of the chip inside the chip. Summary of the Invention

[0003] Based on this, it is necessary to provide a temperature detection circuit with adjustable output, a chip, a device, and a vehicle having the same for the above-mentioned defects or deficiencies, which can detect the operating temperature of the chip inside the chip.

[0004] In a first aspect, an embodiment of the present invention provides a temperature detection circuit with adjustable output. The temperature detection circuit includes a current control module and a triode.

[0005] The first end of the current control module is connected to a power supply, the second end of the current control module is grounded, the third end of the current control module is connected to the first end of the triode and the output end of the triode, and the second end and the third end of the triode are both grounded.

[0006] The current control module is configured to control a first current passing through the triode; the triode is configured to convert the temperature value of the circuit into a voltage value according to the first current and output it.

[0007] Optionally, in some embodiments of the present invention, the current control module includes a current trimming unit and a current control unit.

[0008] The first end of the current trimming unit is connected to a power supply, the second end of the current trimming unit is grounded, the third end of the current trimming unit is connected to the first end of the current control unit, the second end of the current control unit is connected to the power supply, and the third end of the current control unit is connected to the first end of the triode and the output end of the triode.

[0009] The current trimming unit is configured to trim a second current passing through the current control unit; the current control unit is configured to control the first current passing through the triode according to the second current.

[0010] Optionally, in some embodiments of the present invention, the current trimming unit includes a first current source, a first field-effect transistor, a second field-effect transistor, a third field-effect transistor, a fourth field-effect transistor, a fifth field-effect transistor, a sixth field-effect transistor, a first switch, a second switch, a third switch, a fourth switch, and a fifth switch;

[0011] The first end of the first current source is connected to a power supply, and the second end of the first current source is respectively connected to the first end of the first field-effect transistor, the second end of the first field-effect transistor, the first end of the second field-effect transistor, the first end of the third field-effect transistor, the first end of the fourth field-effect transistor, the first end of the fifth field-effect transistor, and the first end of the sixth field-effect transistor. The third ends of the first field-effect transistor, the second field-effect transistor, the third field-effect transistor, the fourth field-effect transistor, the fifth field-effect transistor, and the sixth field-effect transistor are all grounded. The third end of the second field-effect transistor is connected to the first end of the first switch, the third end of the third field-effect transistor is connected to the first end of the second switch, the third end of the fourth field-effect transistor is connected to the first end of the third switch, the third end of the fifth field-effect transistor is connected to the first end of the fourth switch, and the third end of the sixth field-effect transistor is connected to the first end of the fifth switch. The second ends of the first switch, the second switch, the third switch, the fourth switch, and the fifth switch are all connected to the first end of the current control unit.

[0012] Optionally, in some embodiments of the present invention, the current control unit includes a seventh field-effect transistor and an eighth field-effect transistor;

[0013] The first end and the second end of the seventh field-effect transistor are both connected to the third end of the current trimming unit. The third end of the seventh field-effect transistor is connected to the power supply. The first end of the eighth field-effect transistor is connected to the third end of the current trimming unit, the second end of the eighth field-effect transistor is connected to the power supply, and the third end of the eighth field-effect transistor is connected to the first end and the output end of the triode.

[0014] Optionally, in some embodiments of the present invention, the temperature detection circuit further includes an amplification module;

[0015] The input end of the amplification module is connected to the output end of the triode; the amplification module is configured to amplify the voltage value and output it.

[0016] Optionally, in some embodiments of the present invention, the amplification module includes a first operational amplifier, a first resistor, a second resistor, a reference voltage generation unit, a second operational amplifier, a third resistor, a fourth resistor, and a third operational amplifier;

[0017] The first input terminal of the first operational amplifier is connected to the output terminal of the triode, the second input terminal of the first operational amplifier is connected to the output terminal of the first operational amplifier, the output terminal of the first operational amplifier is connected to the first end of the first resistor, the second end of the first resistor is connected to the first end of the second resistor, the second end of the second resistor is connected to the first output terminal of the temperature detection circuit, the first input terminal of the second operational amplifier is connected to the output terminal of the reference voltage generation unit, the second input terminal of the second operational amplifier is connected to the output terminal of the second operational amplifier, the output terminal of the second operational amplifier is connected to the first end of the third resistor, the second end of the third resistor is connected to the first end of the fourth resistor, the second end of the fourth resistor is connected to the output terminal of the third operational amplifier, the first input terminal of the third operational amplifier is connected to the second end of the first resistor, the second input terminal of the third operational amplifier is connected to the second end of the third resistor, and the output terminal of the third operational amplifier is connected to the second output terminal of the temperature detection circuit.

[0018] Optionally, in some embodiments of the present invention, the reference voltage generation unit includes a second current source, a voltage dividing resistor, and a selection switch;

[0019] The first end of the second current source is connected to the power supply, the second end of the second current source is connected to the first end of the voltage dividing resistor, the second end of the voltage dividing resistor is grounded, the first end of the selection switch is connected to the first end of the voltage dividing resistor, and the second end of the selection switch is connected to the first input terminal of the second operational amplifier.

[0020] In a second aspect, an embodiment of the present invention provides a video transmission chip, which includes an analog-to-digital conversion module, a digital module, and the temperature detection circuit with adjustable output according to any one of the first aspect;

[0021] The input terminal of the analog-to-digital conversion module is connected to the output terminal of the temperature detection circuit, and the output terminal of the analog-to-digital conversion module is connected to the input terminal of the digital module;

[0022] The analog-to-digital conversion module is configured to send the digital signal to the digital module after converting the voltage value into a digital signal; the digital module is configured to switch different working modes according to the digital signal.

[0023] In a third aspect, an embodiment of the present invention provides an electronic device, which includes the video transmission chip according to the second aspect.

[0024] In a fourth aspect, an embodiment of the present invention provides a vehicle, which includes the electronic device according to the third aspect.

[0025] As can be seen from the above technical solutions, the embodiments of the present invention have the following advantages:

[0026] The temperature detection circuit with adjustable output, chip, device, and vehicle having the same provided by the embodiments of the present invention utilize the characteristic that the voltage of a triode can vary linearly with temperature. Thus, the first current passing through the triode is controlled by a current control module, and then the triode converts the temperature value of the circuit into a quantifiable and reflected voltage value for output according to the first current, realizing the function of detecting the operating temperature of the chip on-chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] By reading the detailed description of the non-limiting embodiments with reference to the following drawings, other features, objects, and advantages of the present invention will become more apparent:

[0028] Figure 1 It is a block diagram of a temperature detection circuit with adjustable output provided by an embodiment of the present invention;

[0029] Figure 2 It is a block diagram of another temperature detection circuit with adjustable output provided by an embodiment of the present invention;

[0030] Figure 3 It is a block diagram of yet another temperature detection circuit with adjustable output provided by an embodiment of the present invention;

[0031] Figure 4 It is a specific example of a temperature detection circuit with adjustable output provided by an embodiment of the present invention;

[0032] Figure 5 It is a schematic diagram of the relationship between Vbjt and temperature provided by an embodiment of the present invention;

[0033] Figure 6 It is a schematic diagram of the circuit structure of a reference voltage generation unit provided by an embodiment of the present invention;

[0034] Figure 7 It is a schematic diagram of the circuit structure of a resistance trimming circuit for a second resistor R2 provided by an embodiment of the present invention;

[0035] Figure 8 It is a block diagram of a video transmission chip provided by an embodiment of the present invention;

[0036] Figure 9 It is a block diagram of an electronic device provided by an embodiment of the present invention;

[0037] Figure 10 It is a block diagram of a vehicle provided by an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0038] To enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0039] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described can be implemented in an order other than those illustrated or described herein.

[0040] In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or modules does not have to be limited to those clearly listed steps or modules, but may include other steps or modules not clearly listed or inherent to these processes, methods, products or devices.

[0041] For the convenience of better understanding the present invention, the temperature detection circuit with adjustable output and the chip, device, and vehicle having the same provided by the embodiments of the present invention will be elaborated in detail below through Figures 1 to 10 the output adjustable temperature detection circuit and the chip, device, and vehicle having the same provided by the embodiments of the present invention will be elaborated in detail below through

[0042] Please refer to Figure 1 , which is a structural block diagram of an output adjustable temperature detection circuit provided by an embodiment of the present invention. The output adjustable temperature detection circuit 10 includes a current control module 11 and a triode 12. For example, the triode 12 can be a PNP transistor. Among them, the first end of the current control module 11 is connected to the power supply, the second end of the current control module 11 is grounded, the third end of the current control module 11 is connected to the first end and the output end of the triode 12, and the second end and the third end of the triode 12 are both grounded.

[0043] Exemplarily, the embodiment of the present invention can control the first current passing through the triode 12 through the current control module 11, and the triode 12 then converts the temperature value of the circuit into a voltage value and outputs it according to the first current. Therefore, the embodiment of the present invention utilizes the principle of the negative temperature coefficient of the Vbe voltage between the base b and the emitter e of the triode, that is, when the triode is working normally, the Vbe voltage can decrease with the increase of temperature, and can realize the function of detecting the working temperature of the chip on the chip.

[0044] Optionally, as Figure 2As shown, in some embodiments of the present invention, the current control module 11 may include a current trimming unit 111 and a current control unit 112. Among them, the first end of the current trimming unit 111 is connected to the power supply, the second end of the current trimming unit 111 is grounded, the third end of the current trimming unit 111 is connected to the first end of the current control unit 112, the second end of the current control unit 112 is connected to the power supply, and the third end of the current control unit 112 is connected to the first end and the output end of the triode 12. During actual use, in the embodiments of the present invention, the current trimming unit 111 trims the second current passing through the current control unit 112, and the current control unit 112 controls the first current passing through the triode 12 according to the second current.

[0045] Optionally, as Figure 3 shown, in some embodiments of the present invention, the temperature detection circuit 10 may further include an amplification module 13, where the input end of the amplification module 13 is connected to the output end of the triode 12, so as to amplify the voltage value and output it.

[0046] Exemplarily, please refer to Figure 4 the following for a detailed description of the specific structures of each component module or unit in the temperature detection circuit 10 with adjustable output.

[0047] For example, the current trimming unit 111 in the current control module 11 may include, but is not limited to, a first current source A1, a first field effect transistor Q1, a second field effect transistor Q2, a third field effect transistor Q3, a fourth field effect transistor Q4, a fifth field effect transistor Q5, a sixth field effect transistor Q6, a first switch SW_I1, a second switch SW_I2, a third switch SW_I3, a fourth switch SW_I4, and a fifth switch SW_I5. Among them, the first end of the first current source A1 (corresponding to the first end of the current control module 11) is connected to the power supply (VDD), and the second end of the first current source A1 is respectively connected to the first end of the first field effect transistor Q1, the second end of the first field effect transistor Q1, the first end of the second field effect transistor Q2, the first end of the third field effect transistor Q3, the first end of the fourth field effect transistor Q4, the first end of the fifth field effect transistor Q5, and the first end of the sixth field effect transistor Q6. The third ends of the first field effect transistor Q1, the second field effect transistor Q2, the third field effect transistor Q3, the fourth field effect transistor Q4, the fifth field effect transistor Q5, and the sixth field effect transistor Q6 (corresponding to the second end of the current control module 11) are all grounded. The third end of the second field effect transistor Q2 is connected to the first end of the first switch SW_I1, the third end of the third field effect transistor Q3 is connected to the first end of the second switch SW_I2, the third end of the fourth field effect transistor Q4 is connected to the first end of the third switch SW_I3, the third end of the fifth field effect transistor Q5 is connected to the first end of the fourth switch SW_I4, the third end of the sixth field effect transistor Q6 is connected to the first end of the fifth switch SW_I5, and the second ends of the first switch SW_I1, the second switch SW_I2, the third switch SW_I3, the fourth switch SW_I4, and the fifth switch SW_I5 are all connected to the first end of the current control unit 112.

[0048] Optionally, in some embodiments of the present invention, the first field effect transistor Q1, the second field effect transistor Q2, the third field effect transistor Q3, the fourth field effect transistor Q4, the fifth field effect transistor Q5, and the sixth field effect transistor Q6 may all be NMOS transistors. At this time, the first end of the first field effect transistor Q1 is the drain of the NMOS transistor, the second end of the first field effect transistor Q1 is the gate of the NMOS transistor, and the third end of the first field effect transistor Q1 is the source of the NMOS transistor; the first end of the second field effect transistor Q2 is the gate of the NMOS transistor, the second end of the second field effect transistor Q2 is the source of the NMOS transistor, and the third end of the second field effect transistor Q2 is the drain of the NMOS transistor; the first end of the third field effect transistor Q3 is the gate of the NMOS transistor, the second end of the third field effect transistor Q3 is the source of the NMOS transistor, and the third end of the third field effect transistor Q3 is the drain of the NMOS transistor; the first end of the fourth field effect transistor Q4 is the gate of the NMOS transistor, the second end of the fourth field effect transistor Q4 is the source of the NMOS transistor, and the third end of the fourth field effect transistor Q4 is the drain of the NMOS transistor; the first end of the fifth field effect transistor Q5 is the gate of the NMOS transistor, the second end of the fifth field effect transistor Q5 is the source of the NMOS transistor, and the third end of the fifth field effect transistor Q5 is the drain of the NMOS transistor; and the first end of the sixth field effect transistor Q6 is the gate of the NMOS transistor, the second end of the sixth field effect transistor Q6 is the source of the NMOS transistor, and the third end of the sixth field effect transistor Q6 is the drain of the NMOS transistor.

[0049] Further, assume that the reference current IREF of the first current source A1 is 25 μA, and the first field-effect transistor Q1, the second field-effect transistor Q2, the third field-effect transistor Q3, the fourth field-effect transistor Q4, the fifth field-effect transistor Q5, and the sixth field-effect transistor Q6 are current mirror NMOS transistors. The width-to-length ratio W / L of Q1 is 25 μm / 1 μm, the width-to-length ratio W / L of Q2 is 1 μm / 1 μm, the width-to-length ratio W / L of Q3 is 2 μm / 1 μm, the width-to-length ratio W / L of Q4 is 4 μm / 1 μm, the width-to-length ratio W / L of Q5 is 8 μm / 1 μm, and the width-to-length ratio W / L of Q6 is 16 μm / 1 μm. At this time, the current passing through Q1 is 25 μA, the current passing through Q2 is 1 μA, the current passing through Q3 is 2 μA, the current passing through Q4 is 4 μA, the current passing through Q5 is 8 μA, and the current passing through Q6 is 16 μA. Then, by controlling the switches SW_I1 to SW_I5, the second current passing through the current control unit 112 can be trimmed, and the minimum trimming value is 1 μA. Among them, in the embodiment of the present invention, SW_I5 is default closed, that is, the switch SW_I5 is turned on, and the configuration value is 10000. Thus, the configuration value can reach up to 11111 at most and 00000 at least, that is, there is an adjustment space both upward and downward. At this time, the second current passing through the current control unit 112 is 16 μA. It should be noted that the determining factor for controlling the switches SW_I1 to SW_I5 is to determine the on / off of the switches according to the test results during chip testing. For example, if it is desired to increase the output voltage, more switches should be closed to make the current larger; conversely, more switches should be opened to make the current smaller.

[0050] For another example, the current control unit 112 in the current control module 11 may include, but is not limited to, a seventh field-effect transistor Q7 and an eighth field-effect transistor Q8. Among them, the first end and the second end of the seventh field-effect transistor Q7 are both connected to the third end of the current trimming unit 111. The third end of the seventh field-effect transistor Q7 (corresponding to the first end of the current control module 11) is connected to the power supply (VDD). The first end of the eighth field-effect transistor Q8 is connected to the third end of the current trimming unit 111. The second end of the eighth field-effect transistor Q8 is connected to the power supply (VDD). The third end of the eighth field-effect transistor Q8 (corresponding to the third end of the current control module 11) is connected to the first end and the output end of the triode 12.

[0051] Optionally, in some embodiments of the present invention, the seventh field effect transistor Q7 and the eighth field effect transistor Q8 can both be PMOS transistors. At this time, the first end of the seventh field effect transistor Q7 is the drain of the PMOS transistor, the second end of the seventh field effect transistor Q7 is the gate of the PMOS transistor, and the third end of the seventh field effect transistor Q7 is the source of the PMOS transistor; and, the first end of the eighth field effect transistor Q8 is the gate of the PMOS transistor, the second end of the eighth field effect transistor Q8 is the source of the PMOS transistor, and the third end of the eighth field effect transistor Q8 is the drain of the PMOS transistor.

[0052] Furthermore, assuming that the width-to-length ratio W / L of the seventh field effect transistor Q7 and the eighth field effect transistor Q8 is the same, if the current passing through Q7 is 16 μA, then the current Ibjt passing through the triode 12 is also 16 μA, which can be adjusted up and down, and the minimum step size step = 1 μA. Thus, in the embodiments of the present invention, by utilizing the characteristic that the Vbe voltage of the triode 12 changes with temperature, the temperature value of the circuit is converted into a voltage value, that is:

[0053] Vbjt = Vbe = (k * T / q) * ln(Ibjt / Is) (1)

[0054] In formula (1), k represents the Boltzmann constant, with a magnitude of 1.38 * 10^2 J / K; T represents the absolute temperature; q represents the electric charge of an electron, with a magnitude of 1.62 * 10^-19; Is represents the saturation current, which is proportional to ukTn2, where u represents the minority carrier mobility and n represents the intrinsic carrier concentration of silicon. For example Figure 5 As shown, it is a schematic diagram of the relationship between Vbjt and temperature provided by the embodiments of the present invention. It can be seen that the result is an approximately linear change relationship. In the range of -40°C to 115°C, the temperature coefficient is -1.6 mV / °C. At -40°C, Vbjt is 860 mV, and at 115°C, Vbjt is 610 mV. By adjusting the Ibjt current, the Vbjt voltage output can be finely adjusted.

[0055] For another example, the amplification module 13 may include, but is not limited to, a first operational amplifier AMP1, a first resistor R1, a second resistor R2, a reference voltage generation unit, a second operational amplifier AMP2, a third resistor R3, a fourth resistor R4, and a third operational amplifier AMP3. That is, these devices form a subtractor, and the resistance value of the first resistor R1 may be equal to that of the third resistor R3, and the resistance value of the second resistor R2 may also be equal to that of the fourth resistor R4. Among them, the first input terminal (corresponding to Vbjt) of the first operational amplifier AMP1 is connected to the output terminal of the triode 12, the second input terminal of the first operational amplifier AMP1 is connected to the output terminal of the first operational amplifier AMP1, the output terminal of the first operational amplifier AMP1 is connected to the first end of the first resistor R1, the second end of the first resistor R1 is connected to the first end of the second resistor R2, the second end of the second resistor R2 is connected to the first output terminal of the temperature detection circuit 10, the first input terminal of the second operational amplifier AMP2 is connected to the output terminal of the reference voltage generation unit (corresponding to Vsub), the second input terminal of the second operational amplifier AMP2 is connected to the output terminal of the second operational amplifier AMP2, the output terminal of the second operational amplifier AMP2 is connected to the first end of the third resistor R3, the second end of the third resistor R3 is connected to the first end of the fourth resistor R4, the second end of the fourth resistor R4 is connected to the output terminal of the third operational amplifier AMP3, the first input terminal of the third operational amplifier AMP3 is connected to the second end of the first resistor R1, the second input terminal of the third operational amplifier AMP3 is connected to the second end of the third resistor R3, and the output terminal of the third operational amplifier AMP3 (corresponding to Vtemp) is connected to the second output terminal of the temperature detection circuit 10.

[0056] It should be noted that since the variation range of Vbjt with temperature is 860 mV - 610 mV = 250 mV, which is relatively small, this means that the voltage variation range per degree Celsius is only about 1.6 mV. Therefore, Vbjt can be amplified to ensure the detection accuracy. As Figure 4 shown, the output voltage of the amplification module 13:

[0057] Vtemp = (Vbjt - Vsub) * R2 / R1 (2)

[0058] By adjusting the ratio of the first resistor R1 and the second resistor R2, as well as the value of Vsub, the range of Vtemp can be 0.1 V - 1.2 V, corresponding to a temperature range of 115 °C to -40 °C. Thus, a temperature coefficient voltage with a temperature change of -7 mV can be output. As long as the detection accuracy of the subsequent analog-to-digital conversion module (ADC) is less than 7 mV, a temperature detection accuracy of 1 °C can be achieved.

[0059] Optionally, as Figure 6As shown, in some embodiments of the present invention, the reference voltage generation unit may include, but is not limited to, a second current source A2, a voltage dividing resistor, and a selection switch. The first end of the second current source A2 is connected to the power supply (VDD), the second end of the second current source A2 is connected to the first end of the voltage dividing resistor, the second end of the voltage dividing resistor is grounded, and the first end of the selection switch is connected to the first end of the voltage dividing resistor, and the second end of the selection switch is connected to the first input terminal of the second operational amplifier AMP2. For example, the reference current IREF of the second current source A2 is 25 uA, the voltage dividing resistors are R01 - R011, the resistance value of R01 is 20 KΩ, and the resistance values of R02 - R011 are all 500 Ω, that is, the voltage dividing resistor has a step of step = 500 Ω, and the voltage is selected for output through the selection switches SW0 - SW9. That is, when SW0 is turned on, the lowest voltage is selected for output, and when SW9 is turned on, the highest voltage is selected for output, achieving an adjustable range of the Vsub voltage from 500 mV to 625 mV, and the minimum step step = 12.5 mV.

[0060] Optionally, in some embodiments of the present invention, it is assumed that R1 = R3 = 20 KΩ, and the structure of the second resistor R2 is as Figure 7 shown, and its resistance value of R2 can be selected from 60 KΩ to 123 KΩ through the switches SW’0 - SW’5. The fourth resistor R4 has the same structure as the second resistor R2. Then, the amplification factor R2 / R1 of the amplification module 13 ranges from 3 to 6.15 times, and the adjustable minimum step step = 0.05 times.

[0061] Furthermore, by further adjusting SW7 = 1 in the reference voltage generation unit to select Vsub = 587.5 mV, and setting SW’0 = 0, SW’1 = 0, SW’2 = 1, SW’3 = 1, SW’4 = 1, and SW’5 = 0 in the resistance trimming circuit of the second resistor R2, such that R2 = 88 KΩ, then the amplification factor of the amplification module 13 is 4.4. According to Equation (2), that is, the output voltage formula Vtemp = (Vbjt - Vsub) * R2 / R1, the output voltage Vtemp can be obtained. When the temperature changes from -40 °C to 115 °C, the corresponding range of Vtemp is 1.2 V to 0.1 V.

[0062] As another aspect, an embodiment of the present invention also provides a video transmission chip. As Figure 8 shown, the video transmission chip 20 may include, but is not limited to, an analog-to-digital conversion module 21, a digital module 22, and Figures 1 - 7 the temperature detection circuit 10 with adjustable output in the corresponding embodiment.

[0063] Among them, the input end of the analog-to-digital conversion module 21 is connected to the output end of the temperature detection circuit 10, and the output end of the analog-to-digital conversion module 21 is connected to the input end of the digital module 22. In actual use, after converting the voltage value into a digital signal, the analog-to-digital conversion module 21 in the embodiment of the present invention can send the digital signal to the digital module 22, and then the digital module 22 can switch different working modes according to the digital signal.

[0064] As another aspect, the embodiment of the present invention also provides an electronic device. As Figure 9 shown, the electronic device 30 may include Figure 8 the video transmission chip 20 corresponding to the embodiment.

[0065] As yet another aspect, the embodiment of the present invention also provides a vehicle. As Figure 10 shown, the vehicle 40 may include Figure 9 the electronic device 30 corresponding to the embodiment.

[0066] The embodiment of the present invention provides a temperature detection circuit with adjustable output, a chip, a device, and a vehicle having the same. The temperature detection circuit utilizes the characteristic that the voltage of a triode can vary linearly with temperature. Thus, the first current passing through the triode is controlled by a current control module, and then the triode converts the temperature value of the circuit into a voltage value that can be quantitatively reflected for output according to the first current, realizing the function of detecting the working temperature of the chip on-chip.

[0067] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0068] The above embodiments only represent several implementation manners of the present invention. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several deformations and improvements can be made, and these all belong to the protection scope of the present invention.

Claims

1. A temperature detection circuit with adjustable output, characterized in that The temperature detection circuit includes a current control module and a triode; A first end of the current control module is connected to a power supply, a second end of the current control module is grounded, a third end of the current control module is connected to a first end of the triode, and a second end and a third end of the triode are both grounded; The current control module is configured to control a first current passing through the triode; the triode is configured to convert a temperature value of the circuit into a voltage value and output it according to the first current; The current control module includes a current trimming unit and a current control unit; A first end of the current trimming unit is connected to a power supply, a second end of the current trimming unit is grounded, a third end of the current trimming unit is connected to a first end of the current control unit, a second end of the current control unit is connected to the power supply, and a third end of the current control unit is connected to a first end of the triode; The current trimming unit is configured to trim a second current passing through the current control unit; the current control unit is configured to control the first current passing through the triode according to the second current.

2. The temperature detection circuit with adjustable output according to claim 1, wherein the current trimming unit includes a first current source, a first field effect transistor, a second field effect transistor, a third field effect transistor, a fourth field effect transistor, a fifth field effect transistor, a sixth field effect transistor, a first switch, a second switch, a third switch, a fourth switch, and a fifth switch; A first end of the first current source is connected to a power supply, a second end of the first current source is respectively connected to a first end of the first field effect transistor, a second end of the first field effect transistor, a first end of the second field effect transistor, a first end of the third field effect transistor, a first end of the fourth field effect transistor, a first end of the fifth field effect transistor, and a first end of the sixth field effect transistor, a third end of the first field effect transistor, a second end of the second field effect transistor, a second end of the third field effect transistor, a second end of the fourth field effect transistor, a second end of the fifth field effect transistor, and a second end of the sixth field effect transistor are all grounded, a third end of the second field effect transistor is connected to a first end of the first switch, a third end of the third field effect transistor is connected to a first end of the second switch, a third end of the fourth field effect transistor is connected to a first end of the third switch, a third end of the fifth field effect transistor is connected to a first end of the fourth switch, a third end of the sixth field effect transistor is connected to a first end of the fifth switch, and a second end of the first switch, a second end of the second switch, a second end of the third switch, a second end of the fourth switch, and a second end of the fifth switch are all connected to a first end of the current control unit.

3. The temperature detection circuit with adjustable output according to claim 1, wherein The current control unit includes a seventh field effect transistor and an eighth field effect transistor; The first end and the second end of the seventh field-effect transistor are both connected to the third end of the current trimming unit. The third end of the seventh field-effect transistor is connected to a power supply. The first end of the eighth field-effect transistor is connected to the third end of the current trimming unit. The second end of the eighth field-effect transistor is connected to the power supply. The third end of the eighth field-effect transistor is connected to the first end of the triode.

4. A temperature detection circuit with adjustable output according to any one of claims 1-3, characterized in that, The temperature detection circuit further includes an amplification module; The input end of the amplification module is connected to the first end of the triode; the amplification module is configured to amplify the voltage value and output it.

5. The temperature detection circuit with adjustable output according to claim 4, wherein The amplification module includes a first operational amplifier, a first resistor, a second resistor, a reference voltage generation unit, a second operational amplifier, a third resistor, a fourth resistor, and a third operational amplifier; The first input end of the first operational amplifier is connected to the first end of the triode. The second input end of the first operational amplifier is connected to the output end of the first operational amplifier. The output end of the first operational amplifier is connected to the first end of the first resistor. The second end of the first resistor is connected to the first end of the second resistor. The second end of the second resistor is connected to the first output end of the temperature detection circuit. The first input end of the second operational amplifier is connected to the output end of the reference voltage generation unit. The second input end of the second operational amplifier is connected to the output end of the second operational amplifier. The output end of the second operational amplifier is connected to the first end of the third resistor. The second end of the third resistor is connected to the first end of the fourth resistor. The second end of the fourth resistor is connected to the output end of the third operational amplifier. The first input end of the third operational amplifier is connected to the second end of the first resistor. The second input end of the third operational amplifier is connected to the second end of the third resistor. The output end of the third operational amplifier is connected to the second output end of the temperature detection circuit.

6. The temperature detection circuit with adjustable output according to claim 5, characterized in that, The reference voltage generation unit includes a second current source, a voltage-dividing resistor, and a selection switch; The first end of the second current source is connected to the power supply. The second end of the second current source is connected to the first end of the voltage-dividing resistor. The second end of the voltage-dividing resistor is grounded. The first end of the selection switch is connected to the first end of the voltage-dividing resistor. The second end of the selection switch is connected to the first input end of the second operational amplifier.

7. A video transmission chip, characterized in that, The video transmission chip includes an analog-to-digital conversion module, a digital module, and the temperature detection circuit with adjustable output according to any one of claims 1 to 6; The input end of the analog-to-digital conversion module is connected to the output end of the temperature detection circuit. The output end of the analog-to-digital conversion module is connected to the input end of the digital module; The analog-to-digital conversion module is configured to send the digital signal to the digital module after converting the voltage value into a digital signal; the digital module is configured to switch different working modes according to the digital signal.

8. An electronic device, characterized in that, The electronic device includes the video transmission chip according to claim 7.

9. A vehicle, characterized in that, The vehicle includes the electronic device according to claim 8.

Images