Semiconductor inspection equipment

Abstract

The inspection system (1) comprises: a light source (33); a mirror (40b); a galvanometer mirror (44a, 44b); a housing (32) which holds the mirror (40b) and the galvanometer mirror (44a, 44b) inside and has a mounting portion (46) for mounting an optical element; and a control portion (21a) which controls the deflection angle of the galvanometer mirror (44a, 44b); the control portion (21a) controls the deflection angle by switching an optical path optically connected to a semiconductor device (D) between a first optical path (L1) passing through the galvanometer mirror (44a, 44b) and the mirror (40b) and a second optical path (L2) passing through the galvanometer mirror (44a, 44b) and the mounting portion (46), and controls the deflection angle in a manner such that the deflection angle when switching to the first optical path (L1) and the deflection angle when switching to the second optical path (L2) do not overlap.

Description

[0001] This application is filed on March 7, 2018 、Application No. 201880035932.6 、The name of the invention is semiconductor Inspection device A divisional application for a patent application. Technical Field

[0002] The present invention relates to a semiconductor inspection apparatus for inspecting a semiconductor device. Background Art

[0003] Conventionally, there is a device that inspects semiconductor devices while applying a test signal. For example, in the following patent document 1, there is known a device having a galvanometer mirror, two optical fibers, and a multi-fiber turntable that can be optically coupled to them, one optical fiber is optically coupled to a laser scanning module (hereinafter referred to as "LSM"), and the other optical fiber is optically connected to a single photon detector. In such a device, inspection of semiconductor devices by LSM and luminescence measurement by a single photon detector can be performed switchably.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: U.S. Patent Publication No. 2009 / 0295414 Summary of the invention

[0007] Problems to be solved by the invention

[0008] In the above-mentioned conventional semiconductor device inspection apparatus, it is desirable to set an optimal optical system in each optical element. That is, when the optical system is shared by the optical elements, there is a tendency that the spatial accuracy of the optical path in each optical element is reduced.

[0009] An object of an embodiment is to provide a semiconductor inspection device.

[0010] Technical means of solving problems

[0011] An embodiment of the present invention is a semiconductor inspection device. The semiconductor inspection device is a semiconductor inspection device for inspecting semiconductor devices, and includes: a first light source that generates light irradiated on the semiconductor device; a light guide element that is optically connected to the first light source; a pair of galvanometer mirrors that are arranged at a position that can be optically connected to the first light source via the light guide element; a housing that holds the light guide element and the pair of galvanometer mirrors inside and has a first mounting portion for mounting the optical element that is arranged at a position that can be optically connected to the pair of galvanometer mirrors; and a control portion that controls the deflection angle of the pair of galvanometer mirrors; the control portion controls the deflection angle in a manner that switches the optical path optically connected to the semiconductor device between a first optical path passing through the pair of galvanometer mirrors and the light guide element and a second optical path passing through the pair of galvanometer mirrors and the first mounting portion, and controls the deflection angle in a manner that the deflection angle when switching to the first optical path does not overlap the deflection angle when switching to the second optical path.

[0012] Effects of the Invention

[0013] According to the semiconductor inspection apparatus of the embodiment, the spatial accuracy of the optical paths in the plurality of optical elements is improved, thereby making it possible to inspect semiconductor devices with high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a configuration diagram of the inspection system according to the first embodiment.

[0015] Figure 2 It is displayed in Figure 1 A diagram showing the structure and the first optical path in the optical device 31A when it is switched to the first inspection system.

[0016] Figure 3 It is displayed in Figure 1 A diagram showing the structure and the second optical path in the state where the optical device 31A is switched to the second inspection system.

[0017] Figure 4 Is displayed by Figure 1 FIG. 2 is a diagram showing a change range of the deflection angle of a pair of galvanometer mirrors 44a and 44b controlled by the control unit 21a of the computer 21. FIG.

[0018] Figure 5 It is a diagram showing the structure of an optical device 31B according to the second embodiment.

[0019] Figure 6 It is a diagram showing the structure of an optical device 31C according to the third embodiment.

[0020] Figure 7 It is a diagram showing the structure of an optical device 31D according to the fourth embodiment.

[0021] Figure 8The diagram shows a change range of the deflection angle of the pair of galvanometer mirrors 44 a and 44 b controlled by the control unit 21 a of the computer 21 according to the fourth embodiment.

[0022] Fig. 9 It is a diagram showing the structure of an optical device 31E according to the fourth embodiment.

[0023] Fig.10 It is a diagram showing the structure of an optical device 31F according to a modification.

[0024] Fig.11 It is a diagram showing the structure of an optical device 31G according to a modification.

[0025] Fig.12 It is a diagram showing the structure of an optical device 31H according to a modification.

[0026] Fig.13 It is a diagram showing the structure of an optical device 31I according to a modification. DETAILED DESCRIPTION

[0027] Below, while referring to the attached Figure 1 In the description of the drawings, the same or corresponding parts are given the same reference numerals, and duplicate descriptions are omitted.

[0028] [First embodiment]

[0029] like Figure 1 As shown, the inspection system 1 according to the first embodiment is a semiconductor inspection device for inspecting a semiconductor device D by specifying a faulty part in a device under test (DUT: Device Under Test), i.e., a semiconductor device D. In addition to performing a process of specifying a faulty part, the inspection system 1 can also perform a process of marking the faulty part around the faulty part, etc. By using the mark, the faulty part specified by the inspection system 1 can be easily grasped in the post-process of fault analysis.

[0030] The semiconductor device D is, for example, an individual semiconductor element (discrete element), an optoelectronic element, a sensor / actuator, a logic LSI (Large Scale Integration), a memory element, or a linear IC (Integrated Circuit), or a hybrid device thereof. Individual semiconductor elements include diodes, power transistors, etc. Logic LSI is composed of transistors of MOS (Metal-Oxide-Semiconductor) structure, transistors of bipolar structure, etc. In addition, the semiconductor device D may be a package including a semiconductor device, a composite substrate, etc. The semiconductor device D is formed by forming a metal layer on a substrate. As a substrate of the semiconductor device D, for example, a silicon substrate can be used. The semiconductor device D is placed on the sample carrier 40.

[0031] The inspection system 1 includes a signal applying unit 11 , a computer 21 , a display unit 22 , an input unit 23 , and an optical device 31A.

[0032] The signal applying section 11 is electrically connected to the semiconductor device D via a cable, and applies a stimulus signal to the semiconductor device D. The signal applying section 11 is, for example, a test unit, and operates by a power supply (not shown) to repeatedly apply a stimulus signal such as a specified test pattern to the semiconductor device D. The signal applying section 11 may be a signal applying section that applies a modulated current signal, or a signal applying section that applies a CW (continuous wave) current signal. The signal applying section 11 is electrically connected to the computer 21 via a cable, and applies a stimulus signal such as a test pattern specified by the computer 21 to the semiconductor device D. In addition, the signal applying section 11 may not necessarily be electrically connected to the computer 21. When the signal applying section 11 is not electrically connected to the computer 21, the stimulus signal such as a test pattern is determined by a single machine, and the stimulus signal such as the test pattern is applied to the semiconductor device D. The signal applying section 11 may be a pulse generator that generates a specified signal and applies it to the semiconductor device D.

[0033] The computer 21 is electrically connected to the optical device 31A via a cable. The computer 21 is a computer including, for example, a processor (CPU: Central Processing Unit), and storage media, namely, RAM (Random Access Memory), ROM (Read Only Memory), and HDD (Hard Disk Drive). The computer 21 performs processing of the processor on the data stored in the storage medium. In addition, the computer 21 can be composed of a microcomputer or an FPGA (Field-Programmable Gate Array), a cloud server, and the like. The computer 21 produces a pattern image or an analysis image (such as a luminous image, etc.) based on the detection signal input from the optical device 31A. Here, it is not easy to identify the detailed position in the pattern of the semiconductor device D only by the analysis image. Therefore, the computer 21 generates an overlapping image in which the pattern image based on the reflected light from the semiconductor device D overlaps with the analysis image of the semiconductor device D as an analysis image.

[0034] In addition, the computer 21 outputs the generated analysis image to the display unit 22. The display unit 22 is a display device such as a display for displaying the analysis image to the user. The display unit 22 displays the input analysis image. In this case, the user confirms the position of the fault part from the analysis image displayed by the display unit 22, and inputs the information showing the fault part to the input unit 23. The input unit 23 is an input device such as a keyboard and a mouse that accepts input from the user. The input unit 23 inputs the information showing the fault part accepted from the user to the computer 21. In addition, the computer 21, the display unit 22, and the input unit 23 can be a smart device terminal.

[0035] Secondly, refer to Figure 2 and Figure 3 , the structure of the optical device 31A is described. Figure 2 1 is a diagram showing the structure and the first optical path in the state where the optical device 31A is switched to the first inspection system. Figure 3 This is a diagram showing the structure and the second optical path in a state where the optical device 31A is switched to the second inspection system.

[0036] like Figure 2 and Figure 3 As shown, the optical device 31A includes: a shell 32, a light source (a first light source) 33, a light detector (a first light detector) 34, a light detector (a second light detector) 35, an internal optical system 36 arranged inside the shell 32, and an external optical system 37 arranged outside the shell 32.

[0037] The light source 33 is operated by a power source (not shown) to generate light for illuminating the semiconductor device D for generating a pattern image of the semiconductor device D. The light source 33 is an incoherent light source such as an LED (Light Emitting Diode) or an SLD (Super Luminescent Diode) light source. The light source 33 may also be a coherent light source such as a laser. The light output from the light source 33 is irradiated to the semiconductor device D via the internal optical system 36 and the external optical system 37.

[0038] The photodetector 34 detects the reflected light from the semiconductor device D, and outputs a detection signal of the reflected light from the semiconductor device D to the computer 21. For example, the photodetector 34 is a light receiving element such as a photomultiplier tube, a PD (photodiode), or an APD (Avalanche Photodiode). The reflected light from the semiconductor device D enters the photodetector 34 via the external optical system 37 and the internal optical system 36.

[0039] When a stimulus signal such as a test pattern is applied to the semiconductor device D, the photodetector 35 detects the light emitted by the semiconductor device D, and outputs a detection signal of the light emitted by the semiconductor device D to the computer 21. The photodetector 35 is, for example, a superconducting single photon detector, i.e., SSPD (Superconducting Single Photon Detector), a photomultiplier tube, or SiPM (Silicon Photomultipliers). Light from the semiconductor device D is incident on the photodetector 35 via an external optical system 37 and an internal optical system 36.

[0040] The internal optical system 36 is constructed to include: optical fibers 38a, 38b, 38c, collimating lenses 39a, 39b, 39c, a mirror 40a, a light guiding element (mirror) 40b, a polarizing beam splitter (hereinafter referred to as "PBS") 41, a 1 / 4 wavelength plate 42, a variable pupil 43, a pair of galvanometer mirrors 44a, 44b, and a pupil relay lens 45.

[0041] One end of the optical fiber 38a, 38b, 38c is optically connected to the light source 33, the photodetector 34, and the photodetector 35, respectively, outside the housing 32, and the other end of the optical fiber 38a, 38b, 38c is optically connected to the collimating lens 39a, 39b, 39c, respectively, inside the housing 32. The collimating lens 39a converts the light irradiated from the light source 33 into parallel light, and the collimating lenses 39b and 39c convert the light incident on the photodetector 34 and the photodetector 35 into parallel light, respectively. In this way, by receiving the light from the light scanning unit described below with the collimating lens independent of each optical fiber, the wavelength or focus of the light from the semiconductor device D can be optimally adjusted.

[0042] The mirror 40a is arranged on the light output side of the collimating lens 39a inside the housing 32, and the PBS 41 is arranged on the light input side of the collimating lens 39b. The mirror 40a, the PBS 41, the quarter wavelength plate 42, the variable pupil 43, and the mirror 40b are arranged in this order on a straight line. The mirror 40a reflects the light output from the light source 33 toward the PBS 41. The PBS 41 transmits the linearly polarized light in the light output from the light source 33 toward the mirror 40b, and the quarter wavelength plate 42 converts the linearly polarized light into circularly polarized light and outputs it toward the mirror 40b. In addition, the quarter wavelength plate 42 converts the reflected light from the semiconductor device D incident from the mirror 40b side into linearly polarized light in a direction orthogonal to the linearly polarized light of the light output from the light source 33, and the PBS 41 reflects the linearly polarized light of the reflected light toward the photodetector 34. The variable pupil 43 is provided so as to be able to enter and exit the optical path between the mirror 40a and the mirror 40b, and is used to change the size of the pupil.

[0043] The mirror 40b is optically connected to the light source 33 and the photodetector 34 as described above. Specifically, the mirror 40b reflects the light output from the light source 33 and guides it toward the pair of galvanometer mirrors 44a and 44b as the light scanning unit. Thus, the mirror 40b receives the reflected light from the semiconductor device D via the pair of galvanometer mirrors 44a and 44b, and causes the reflected light to be incident on the photodetector 34 via the variable pupil 43, the 1 / 4 wavelength plate 42, the PBS 41, the collimating lens 39b, and the optical fiber 38b. In addition, in the present embodiment, the mirror is used as a light guiding element, but as long as it is an optical element that can guide light between the light source 33 and / or the photodetector 34 and the pair of galvanometer mirrors 44a and 44b, an optical fiber or the like may also be used.

[0044] The pair of galvanometer mirrors 44a and 44b are configured to be optically connected to the light source 33 and the photodetector 34 via the mirror 40b, and to be optically connected to the external optical system 37 via the pupil relay lens 45. That is, the pair of galvanometer mirrors 44a and 44b are arranged in the reflection direction of the light from the light source 33 of the mirror 40b, and are light scanning parts that can two-dimensionally scan the light while reflecting it, for example, having a structure composed of two galvanometer mirrors that can change the deflection angle around a predetermined axis. The pair of galvanometer mirrors 44a and 44b can two-dimensionally scan the light irradiated to the semiconductor device D on the semiconductor device. In addition, the pair of galvanometer mirrors 44a and 44b can also guide the reflected light or the luminous light at a predetermined point of the semiconductor device D toward the predetermined position of the mirror 40b or the collimating lens 39c while selecting the position two-dimensionally. Here, it can be configured so that the semiconductor device D is illuminated two-dimensionally by reflecting a light source prepared separately with one mirror while the pair of galvanometer mirrors 44a and 44b are stopped. The deflection angles of the pair of galvanometer mirrors 44 a and 44 b are configured to be controllable by the control unit 21 a of the computer 21 .

[0045] The collimator lens 39c is held inside the housing 32 by a mounting portion (first mounting portion) 46 provided at a position on the housing 32 that can be optically connected to the pair of galvanometer mirrors 44a and 44b. The mounting portion 46 is a cylindrical member and is a portion for mounting an optical element such as a collimator lens inside the housing 32. Then, the other end of the optical fiber 38c is optically connected to the collimator lens 39c inside the mounting portion 46.

[0046] The external optical system 37 includes mirrors 47a, 47b, 47c, a pupil relay lens 48, and an objective lens unit 49. The external optical system 37 guides the light from the light source 33 to make it incident on the semiconductor device D, and guides the reflected light and the luminescent light generated in the semiconductor device D to make it incident on the internal optical system 36. That is, the light from the light source 33 incident from the internal optical system 36 is reflected by the mirror 47a, passes through the pupil relay lens 48, and is reflected by the mirrors 47b and 47c in sequence, and passes through the objective lens unit 49 to irradiate the semiconductor device D. On the other hand, the reflected light or the luminescent light in the semiconductor device D is reflected by the mirrors 47c and 47b in sequence after passing through the objective lens unit 49, and is reflected by the mirror 47a after passing through the pupil relay lens 48, and is incident on the internal optical system 36. Here, the objective lens unit 49 can be configured as a plurality of objective lenses having different magnifications, and can be switched by a turntable.

[0047] The optical device 31A having the above-described structure is configured to be controlled by the computer 21 so as to switch the optical path optically connected to the semiconductor device D. That is, the computer 21 includes a control unit 21a as a functional component.

[0048] The control unit 21a of the computer 21 controls the deflection angle of the pair of galvanometer mirrors 44a and 44b as follows: By controlling the deflection angle of the pair of galvanometer mirrors 44a and 44b, the first optical path L1 ( Figure 2 ) and a second optical path L2 ( Figure 3 ) between the optical paths optically connected to the semiconductor device D. Specifically, the control unit 21a switches to the first optical path L1 when the user instructs the execution of the reflected light inspection via the input unit 23, and switches to the second optical path L2 when the user instructs the execution of the luminous light inspection via the input unit 23. At the same time, the control unit 21a controls in a manner that the light irradiated to the semiconductor device D is scanned two-dimensionally on the semiconductor device D by sequentially changing the deflection angle of a pair of galvanometer mirrors 44a and 44b within a prescribed angle range, and controls in a manner that the reflected light or luminous light at a prescribed point of the semiconductor device D is scanned two-dimensionally while selecting a position and guiding the light.

[0049] exist Figure 4 An example of the change range of the deflection angle of the pair of galvanometer mirrors 44a and 44b controlled by the control unit 21a of the computer 21 is shown in FIG. Figure 4 In the figure, the horizontal axis H represents the deflection angle of a pair of galvanometer mirrors 44a and 44b in one direction controlled by the control unit 21a, and the vertical axis V represents the deflection angle of the pair of galvanometer mirrors 44a and 44b in another direction perpendicular to the one direction controlled by the control unit 21a. In the present embodiment, one direction is the horizontal direction, and the other direction is the vertical direction. When the control unit 21a is instructed to perform the inspection of the reflected light, the control unit 21a controls in the following manner: the deflection angle of the pair of galvanometer mirrors 44a and 44b is set to a pre-set deflection angle offset value (H, V) = (H1, V1), and the deflection angle is sequentially changed within an angle range W1 of a specified angle range (H1±ΔH1, V1±ΔV1) in one direction and the other direction centered on the offset value (H1, V1). Furthermore, when the control unit 21a is instructed to perform the light emission inspection, the control unit 21a controls the deflection angle of the pair of galvanometer mirrors 44a and 44b to be set to a preset deflection angle offset value (H, V) = (H2, V2), and to sequentially change the deflection angle within an angle range W2 of a predetermined angle range (H2±ΔH2, V2±ΔV2) in one direction and the other direction centered on the offset value (H2, V2). Here, the control unit 21a controls the deflection angle range W1 when switching to the first optical path L1 and the deflection angle range W2 when switching to the second optical path L2 do not overlap.

[0050] The computer 21 also has a function of generating a pattern image or a luminescent image (analysis image) based on the detection signal input from the light detectors 34 and 35. That is, the computer 21 generates a pattern image representing the intensity of reflected light at each two-dimensional position of the semiconductor device D based on the detection signal obtained by scanning the light from the light source 33 on the semiconductor device D under the control of the control unit 21a. Similarly, the computer 21 generates a luminescent image representing the intensity of luminescence at each two-dimensional position of the semiconductor device D based on the detection signal obtained by scanning the observation position on the semiconductor device D under the control of the control unit 21a. Furthermore, the computer 21 generates an overlapped image in which the pattern image and the luminescent image are overlapped as an analysis image, and outputs the generated analysis image to the display unit 22.

[0051] According to the inspection system 1 described above, the deflection angle of the pair of galvanometer mirrors 44a and 44b is controlled in such a manner that the optical path optically connected to the semiconductor device D is switched between the first optical path L1 and the second optical path L2. Thus, the measurement of the reflected light of the semiconductor device D using the light source 33, the photodetector 34, and the mirror 40b and the inspection of the light emission of the semiconductor device D using the photodetector 35 mounted on the mounting portion 46 can be switched. At this time, since the deflection angle of the galvanometer mirrors 44a and 44b when switching to the first optical path L1 and the deflection angle of the galvanometer mirrors 44a and 44b when switching to the second optical path L2 are controlled so as not to overlap, the optical system of each measurement system can be independently set to the optimal state, and as a result, the spatial accuracy of the optical path of each inspection system can be improved. As a result, the semiconductor device D can be inspected with high accuracy.

[0052] In addition, in the optical device 31A, the light emission of the semiconductor device D can be detected via the second optical path L2 by mounting the photodetector 35 on the mounting portion 46. In this case, when the optical path optically connected to the semiconductor device D is switched to the second optical path L2, the light emission from the semiconductor device can be measured using the photodetector 35. Furthermore, by providing the mounting portion 46, the photodetector 35 can be easily replaced with another optical element, and optimal inspection can be performed.

[0053] [Second embodiment]

[0054] exist Figure 5 2 shows a configuration of an optical device 31B according to the second embodiment. The optical device 31B is different from the first embodiment in that it includes a light source 133 in addition to the light source 33 and the light detectors 34 and 35 .

[0055] That is, the optical device 31B further includes a light source (third light source) 133 for irradiating a laser for marking the faulty part. The light source 133 is optically connected to the internal optical system 36 via a collimator lens 39d and an optical fiber 38d held by a mounting portion (third mounting portion) 146 provided at a position on the housing 32 that can be optically connected to the pair of galvanometer mirrors 44a and 44b. Specifically, the mounting portion 146 is a cylindrical member and is a portion for mounting an optical element such as a collimator lens inside the housing 32 on an extension line connecting the pair of galvanometer mirrors 44a and 44b and the dichroic mirror 140b. Furthermore, the optical device 31B includes a dichroic mirror 140b as a light guide element instead of the mirror 40b, and the light source 133 is optically connected to the dichroic mirror 140b. The dichroic mirror 140b reflects light from the light source 33 toward the pair of galvanometer mirrors 44a, 44b, reflects reflected light of the semiconductor device D incident from the pair of galvanometer mirrors 44a, 44b toward the photodetector 34, and transmits laser light from the light source 133 toward the pair of galvanometer mirrors 44a, 44b.

[0056] In the inspection system 1 equipped with the optical device 31B, when the marking process is executed, the control unit 21a of the computer 21 controls the deflection angle of the pair of galvanometer mirrors 44a and 44b in such a manner that the optical path optically connected to the semiconductor device D is switched to the optical path L3 including the external optical system 37 and the internal optical system 36 via the pair of galvanometer mirrors 44a and 44b and the dichroic mirror 140b. Specifically, the control unit 21a switches to the optical path L3 when the user instructs the execution of the marking process via the input unit 23. At this time, the user specifies the position of the fault part in advance based on the analysis image displayed by the display unit 22, and inputs the information showing the fault part using the input unit 23. The control unit 21a controls the deflection angle of the pair of galvanometer mirrors 44a and 44b in such a manner that the deflection angle becomes corresponding to the fault part based on the information showing the fault part input from the input unit 23. Thus, laser marking is performed at the position corresponding to the fault part of the semiconductor device D.

[0057] According to the second embodiment as described above, the optical system of each measuring system can be independently set to an optimal state, and as a result, the spatial accuracy of the optical path in each inspection system can be improved. As a result, the semiconductor device D can be inspected with high accuracy.

[0058] Furthermore, as a modification of the second embodiment, a laser light source that outputs a laser beam having a wavelength of 1064 nm and whose energy is lower than the band gap of silicon, or a laser beam having a wavelength of 1300 nm and whose energy is higher than the band gap of silicon may be used as the light source 133 to perform a failure analysis of the semiconductor device D. By using such a laser light source, a failure analysis can be performed based on the current or voltage output from the semiconductor device D.

[0059] [Third Embodiment]

[0060] exist Figure 6 The structure of an optical device 31C according to the third embodiment is shown in . This optical device 31C is different from the second embodiment in that a light source is optically connected to the optical path between two mirrors 40a and 40b.

[0061] Specifically, the optical device 31C includes a dichroic mirror 240 disposed between the mirror 40 a and the PBS 41 as the internal optical system 36 , and the light source 133 is optically connected to the dichroic mirror 240 via a collimating lens 39 d and an optical fiber 38 d .

[0062] In such a structure, the light output from the light source 133 can be irradiated to the semiconductor device D via the first optical path L1. By using various light sources as the light source 133, it is possible to perform marking processing. In addition, by combining a light source with a wavelength different from that of the light source 33 as the light source 133, it is possible to irradiate the semiconductor device D with light of various wavelengths while performing observation of reflected light or fault analysis.

[0063] [Fourth embodiment]

[0064] exist Figure 7 2 shows the structure of an optical device 31D according to the fourth embodiment. The optical device 31D has a structure that can switch the optical path optically connectable to the semiconductor device D to the first optical path L1 and the second optical path L2 and can also switch the optical path to the third optical path L4.

[0065] Specifically, the optical device 31D further includes a photodetector 335 for inspecting the light emission of the semiconductor device D. The photodetector 335 is optically connected to the internal optical system 36 via a collimator lens 39e and an optical fiber 38e held by a mounting portion (second mounting portion) 346 provided at a position on the housing 32 that can be optically connected to the pair of galvanometer mirrors 44a and 44b. Specifically, the mounting portion 346 is a cylindrical member and is a portion for mounting an optical element such as a collimator lens inside the housing 32.

[0066] In the inspection system 1 equipped with the optical device 31D, when the light emission inspection process using the photodetector 335 is executed, the control unit 21a of the computer 21 controls the deflection angle of the pair of galvanometer mirrors 44a and 44b so as to switch the optical path optically connected to the semiconductor device D to the third optical path L4 including the external optical system 37 and the internal optical system 36 via the pair of galvanometer mirrors 44a and 44b and the collimating lens 39e in the mounting portion 346. Specifically, the control unit 21a switches to the optical path L4 when the execution of the light emission inspection process is instructed by the user via the input unit 23.

[0067] exist Figure 8 2 shows an example of the change range of the deflection angle of the pair of galvanometer mirrors 44a and 44b controlled by the control unit 21a of the computer 21. When the control unit 21a of the present embodiment is instructed to execute the light emission inspection using the light detector 335, the control unit 21a controls in the following manner: the deflection angle of the pair of galvanometer mirrors 44a and 44b is set to a preset offset value of the deflection angle (H, V) = (H4, V4), and the deflection angle is sequentially changed within an angle range W4 of a predetermined angle range (H4±ΔH4, V4±ΔV4) in one direction and the other direction centered on the offset value (H4, V4). Here, the control unit 21a controls in such a manner that the range W1 of the deflection angle when switching to the first optical path L1, the range W2 of the deflection angle when switching to the second optical path L2, and the range W4 of the deflection angle when switching to the third optical path L4 do not overlap.

[0068] According to the fourth embodiment as described above, the optical system of each measuring system can also be independently set to an optimal state, and as a result, the spatial accuracy of the optical path of each inspection system can be improved. As a result, the semiconductor device D can be inspected with high accuracy. Fig. 9 As shown, a light source 333 for illuminating, marking, heating, or generating photovoltaic current of the semiconductor device D may be installed on the mounting portion 346 instead of the light detector 335 .

[0069] In addition, the embodiment is not limited to the above-mentioned embodiment.

[0070] For example, in the first embodiment, the photodetector 35 is optically connected to the galvanometer mirrors 44a and 44b via a collimating lens and an optical fiber, but it may also be Fig.10 As in the optical device 31F according to the illustrated modification, the photodetector 35 is directly optically connected to the galvanometer mirrors 44a and 44b.

[0071] In addition, if Fig.11 As in the optical device 31G according to the modified example shown, a light source 433 that generates light to irradiate the semiconductor device D may be mounted on the mounting portion 46 instead of the photodetector 35. In this case, the light source 433 may be optically connected to the galvanometer mirrors 44a and 44b via a collimating lens and an optical fiber, or may be directly optically connected to the galvanometer mirrors 44a and 44b.

[0072] In addition, if Fig.12As in the optical device 31H involved in the variation shown, the optical path dividing element 50 optically connecting the light source 233 and the light detector 334 can be installed on the mounting portion 46. The light source 233 is an incoherent light source such as an LED (Light Emitting Diode), an SLD (Super Luminescent Diode) light source, or a coherent light source such as a laser. The light detector 334 is a light receiving element such as a photomultiplier tube, a PD (photodiode), and an APD (Avalanche Photodiode). The optical path dividing element 50 is, for example, an optical circulator. In this case, when light is irradiated from the light source 233 to the semiconductor device D via the second optical path L5, the light reflected and returned via the second optical path L5 can be guided to the light detector 334 and detected. In this case, by disposing a 1 / 2 wavelength plate as the polarizing element 51 on the optical path L5 and rotating it at an arbitrary angle, light of arbitrary linear polarization can be irradiated to the semiconductor device D. Alternatively, a polarization-maintaining fiber coupler can be used as the optical path dividing element 50, and a 1 / 4 wavelength plate can be disposed on the optical path L5 as the polarizing element 51. In this case, light output from the light source 233 can be irradiated to the semiconductor device D as circularly polarized light, and light reflected and returned by the semiconductor device D can be guided to the photodetector 334 and detected.

[0073] In addition, it can also be Fig.13 The optical device 31I of the modification shown in the figure is a structure like that of the optical device 31I involved in the modification shown in the figure. That is, the modification is different from the above-mentioned embodiment, and can be configured as follows: the light detector 34 optically connected to the light guide element 40b is not provided, and a plurality of light sources (light source 33 and light source 133) are provided as in the third embodiment, and the light source 233 and the light detector 334 are installed on the installation portion 46 using the optical path dividing element 50 that optically connects the light source 233 and the light detector 334. In this case, the light detector 334 can detect the reflected light of the light irradiated from the light source 233 to the semiconductor device D and generate a pattern image, or the light of different wavelengths is generated from the light source 33 and the light source 133 and irradiated to the semiconductor device D via the first optical path L6 to perform fault analysis.

[0074] According to the semiconductor inspection device of the above-mentioned method, the deflection angle of a pair of galvanometer mirrors is controlled in a manner that switches the optical path optically connected to the semiconductor device between the first optical path and the second optical path. As a result, the measurement of the semiconductor device using the first light source and the light guide element and the inspection of the semiconductor device using the optical element mounted on the first mounting portion can be performed switchably. At this time, since the deflection angle of the galvanometer mirror when switching to the first optical path and the deflection angle of the galvanometer mirror when switching to the second optical path are controlled in a manner that does not overlap, the optical system of each measurement system can be independently set to the optimal state, and as a result, the spatial accuracy of the optical path of each inspection system can be improved. As a result, the semiconductor device can be inspected with high precision.

[0075] In the semiconductor inspection device of the above-mentioned aspect, a first light detector for detecting light from the semiconductor device may be further provided, and the light guide element may be optically connected to the first light detector. In this case, measurement of light from the semiconductor device using the first light source, the first light detector, and the light guide element, and inspection of the semiconductor device using the optical element mounted on the first mounting portion may be performed switchably.

[0076] In addition, a second photodetector for detecting light from the semiconductor device may be further provided, and the second photodetector can detect light via the second optical path by being mounted on the first mounting portion. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the light emission from the semiconductor device can be measured using the second photodetector.

[0077] In addition, the second photodetector may be mounted on the first mounting portion via a collimating lens and an optical fiber. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the light from the semiconductor device can be measured by the second photodetector via the collimating lens and the optical fiber.

[0078] Furthermore, a second light source for generating light to be irradiated to the semiconductor device may be further provided, and the second light source may be mounted on the first mounting portion so as to irradiate light via a second optical path. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the semiconductor device can be inspected by irradiating light to the semiconductor device using the second light source.

[0079] Furthermore, the second light source may be mounted on the first mounting portion via a collimating lens and an optical fiber. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the semiconductor device can be inspected by irradiating light to the semiconductor device via the collimating lens and the optical fiber using the second light source.

[0080] In addition, the device may further include: a second light source for generating light to be irradiated to the semiconductor device, a second light detector for detecting light from the semiconductor device, and an optical path dividing element for optically connecting the second light source and the second light detector, wherein the optical path dividing element can irradiate and / or detect light via the second optical path by being mounted on the first mounting portion. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the light from the semiconductor device can be measured while irradiating the semiconductor device with light using the second light source.

[0081] Furthermore, the housing may further include a second mounting portion for mounting an optical element provided at a position optically connectable to the pair of galvanometer mirrors, and the control portion may control the deflection angle in a manner of switching between the first optical path, the second optical path, and the third optical path passing through the pair of galvanometer mirrors and the second mounting portion, and control the deflection angle in a manner of not overlapping the deflection angle when switching to the first optical path, the deflection angle when switching to the second optical path, and the deflection angle when switching to the third optical path. In this case, by switching the optical path optically connected to the semiconductor device to the third optical path, the inspection of the semiconductor device using the optical element mounted on the second mounting portion can be performed in a switchable manner. In this case, since the control is performed in a manner of not overlapping the deflection angle of the galvanometer mirror when switching to the first optical path, the deflection angle of the galvanometer mirror when switching to the second optical path, and the deflection angle of the galvanometer mirror when switching to the third optical path, the optical system of each inspection system can be independently set to an optimal state, and as a result, the spatial accuracy of the optical path of each inspection system can be improved. As a result, semiconductor devices can be inspected with high accuracy.

[0082] In addition, the light guide element may be a mirror. Furthermore, the mirror as the light guide element may be a dichroic mirror, and the housing may further include a third mounting portion for mounting the optical element on an extension line connecting a pair of galvanometer mirrors and the dichroic mirror. In this case, when the optical path optically connected to the semiconductor device is switched to the first optical path, the semiconductor device can be inspected using the optical element mounted on the third mounting portion.

[0083] Furthermore, a third light source optically connected to the light guide element may be further provided. Thus, when the optical path optically connected to the semiconductor device is switched to the first optical path, the light of the semiconductor device can be measured while irradiating the semiconductor device with light using the third light source.

[0084] Furthermore, the second photodetector may be a superconducting single photon detector.

[0085] Industrial Applicability

[0086] The embodiment is used in a semiconductor inspection apparatus and can inspect semiconductor devices with high accuracy by improving the spatial accuracy of optical paths in a plurality of optical elements.

[0087] Explanation of symbols

[0088] 1…inspection system (semiconductor inspection device), 21…computer, 21a…control unit, 31A to 31G…optical device, 32…housing, 33…(first) light source, 34…(first) photodetector, 35…(second) photodetector, 38a to 38e…optical fibers, 39a to 39e…collimating lens, 40b…light guide element (mirror), 44a, 44b…a pair of galvanometer mirrors, 46…(first) mounting portion, 50…optical path dividing element, 133…(third) light source, 140b…color dichroic mirror, 146…(third) mounting portion, 240…color dichroic mirror, 333…(second) light source, 346…(second) mounting portion, D…semiconductor device, L1…(first) optical path, L2…(second) optical path, L4…(3rd) optical path.

Claims

1. A semiconductor inspection device, characterized in that: It is a semiconductor inspection device for inspecting semiconductor devices. have: a first light source that generates light to illuminate the semiconductor device; A mirror optically connected to the first light source; a pair of galvanometer mirrors disposed at positions capable of optically connecting to the first light source via the mirrors; a first photodetector optically connected to the mirror and detecting light from the semiconductor device; a polarizing beam splitter that transmits the light output from the first light source and reflects the light from the semiconductor device via the pair of galvanometer mirrors toward the first photodetector; a first mounting portion, which is provided at a position capable of optically connecting with the pair of galvanometer mirrors and is used for mounting an optical element; and a control unit that controls the deflection angle of the pair of galvanometer mirrors, The control unit controls the deflection angle so as to switch the optical path optically connected to the semiconductor device between a first optical path passing through the pair of galvanometer mirrors and the mirror and a second optical path passing through the pair of galvanometer mirrors and the first mounting portion. The deflection angle is controlled so that the deflection angle when switching to the first optical path and the deflection angle when switching to the second optical path do not overlap.

2. The semiconductor inspection device according to claim 1, wherein: further comprising a second light source for generating light to illuminate the semiconductor device, The second light source is mounted on the first mounting portion to be able to irradiate the light via the second optical path.

3. The semiconductor inspection device according to claim 2, wherein: The second light source is mounted on the first mounting portion via a collimating lens and an optical fiber.

4. The semiconductor inspection device according to claim 2 or 3, characterized in that: The second light source is a light source for irradiating a laser beam for marking a faulty part.

5. The semiconductor inspection device according to claim 2 or 3, characterized in that: The second light source is a laser light source that outputs laser light having a wavelength of 1300 nm.

6. The semiconductor inspection device according to claim 1 or 2, characterized in that: further comprising a second photodetector for detecting light from the semiconductor device, The second photodetector is mounted on the first mounting portion to be able to detect the light via the second optical path.

7. The semiconductor inspection device according to claim 6, wherein: The second photodetector is mounted on the first mounting portion via a collimating lens and an optical fiber.

8. The semiconductor inspection device according to claim 6, wherein: The second photodetector is a superconducting single photon detector.

9. The semiconductor inspection device according to any one of claims 1 to 3, wherein: It also has a second mounting portion for mounting an optical element, which is disposed at a position capable of optically connecting to the pair of galvanometer mirrors. The control unit controls the deflection angle by switching between the first optical path, the second optical path, and the third optical path through the pair of galvanometer mirrors and the second mounting portion, and controls the deflection angle in a manner such that the deflection angle when switching to the first optical path, the deflection angle when switching to the second optical path, and the deflection angle when switching to the third optical path do not repeat.

10. The semiconductor inspection device according to claim 6, wherein: It also has a second mounting portion for mounting an optical element, which is disposed at a position capable of optically connecting to the pair of galvanometer mirrors. The control unit controls the deflection angle by switching between the first optical path, the second optical path, and the third optical path through the pair of galvanometer mirrors and the second mounting portion, and controls the deflection angle in a manner such that the deflection angle when switching to the first optical path, the deflection angle when switching to the second optical path, and the deflection angle when switching to the third optical path do not repeat.

11. The semiconductor inspection device according to any one of claims 1 to 3, wherein: A third light source optically connected to the mirror is also provided.

12. The semiconductor inspection device according to claim 6, wherein: A third light source optically connected to the mirror is also provided.

13. The semiconductor inspection device according to any one of claims 1 to 3, characterized in that The mirror is a dichroic mirror, The optical device further includes a third mounting portion for mounting an optical element on an extension line connecting the pair of galvanometer mirrors and the dichroic mirror.

14. The semiconductor inspection device according to claim 6, wherein: The mirror is a dichroic mirror, The optical device further includes a third mounting portion for mounting an optical element on an extension line connecting the pair of galvanometer mirrors and the dichroic mirror.

15. The semiconductor inspection device according to any one of claims 1 to 3, wherein: The first photodetector is a PD or an APD, wherein PD refers to a photodiode and APD refers to an avalanche photodiode.

16. The semiconductor inspection device according to claim 6, wherein: The first photodetector is a PD or an APD, wherein PD refers to a photodiode and APD refers to an avalanche photodiode.

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