An electrochemical device for simulating a biological signal and a method of manufacturing the same

Abstract

The present application relates to the technical field of electrochemical devices, and provides an electrochemical device for simulating biological signals and a preparation method thereof.The electrochemical device for simulating biological signals is composed of N double-gate structure units, the correlation between the structure units is realized by forming a common gate between one of the lower gate and the upper gate of each double-gate structure unit and one of the lower gate and the upper gate of each other double-gate structure unit, the mutual influence and restriction between each structure unit are realized, and each double-gate structure unit is changed by adjusting the thickness of the electrolyte layer and other conditions, so that the electrochemical device can present the global regulation and mutual induction of nerve activity.

Description

Technical Field

[0001] This invention relates to the field of electrochemical device technology, and in particular to an electrochemical device that simulates biological signals and its preparation method. Background Technology

[0002] Electrochemical devices that simulate the transmission and processing of biological signals have broad application prospects in future wearable devices, robots, and neural repair, leading to the continuous emergence of various electrochemical devices that simulate biological signal processing.

[0003] Currently, electrochemical devices for simulating biological signals mainly consist of two-terminal memristor structures and three-terminal transistor-like structures. Various mechanisms for trigger voltage-induced channel current changes have been proposed, such as filament effect, oxygen vacancies, phase transitions, charge tunneling and trapping, ion migration, redox reactions, and double-layer effects. These effects effectively regulate changes in channel current, conductance, or resistance, successfully simulating some biological synaptic behaviors, such as short-term plasticity, long-term plasticity, time-dependent plasticity, and frequency-dependent plasticity. In further research, by adding input terminals, multiple information inputs can be integrated and processed on the same device. For example, based on a single three-terminal transistor, multiple gate electrodes can be fabricated above the electrolyte layer outside the channel material to achieve the input of multiple temporal and spatially varying signals, which are reflected through a single channel current.

[0004] However, in organisms, neurons and synapses, which play a crucial role in information processing, exist in a complex electrochemical environment. Various global factors, such as hormone concentrations in body fluids and body temperature, have a regulatory effect on neurons and synapses within this environment. This global regulatory mechanism, also known as the plasticity of the internal environment, is of great significance in the overall behavioral regulation of the nervous system. Furthermore, in the process of central nervous activity in organisms, not only are there excitation or inhibition states of individual synapses, but also, in some neural activities, one neural process can induce the enhancement or inhibition of another neural process; this phenomenon is called mutual induction of neural processes. An inhibitory process in peripheral synapses caused by an excitation process is called negative induction; conversely, an excitation process in peripheral synapses caused by an inhibition process is called positive induction.

[0005] However, in existing technologies, the structural units of electronic components in common integrated circuits are not interconnected, and the regulation of each component is independent, making it impossible to simulate the mutual induction of neural processes. Some devices even require the introduction of diodes and other devices to avoid interference and responses from adjacent devices, which consumes a lot of energy and cannot achieve global regulation. Therefore, simplifying the connections between the structural units of electrochemical devices, reducing energy consumption, and realizing the interaction of units to efficiently simulate the global regulation and mutual induction functions of biological organisms is one of the urgent technical problems to be solved in this field. Summary of the Invention

[0006] In view of the above problems, an electrochemical device for simulating biological signals that overcomes or at least partially solves the above problems and its preparation method are proposed.

[0007] One object of the first aspect of the present invention is to provide an electrochemical device that simulates biological signals that can mimic the mutual induction of neural activity in organisms.

[0008] A further objective of the first aspect of the present invention is to simplify the connection between the structural units of electrochemical devices, thereby reducing energy consumption.

[0009] Another further objective of the first aspect of the present invention is to simulate the simultaneous enhancement, simultaneous inhibition, quiescent, positive induction, and negative induction effects in the neural activity of a living organism by adjusting the thickness of the electrolyte layer of the structural unit of the electrochemical device.

[0010] A second aspect of the present invention aims to provide a method for preparing the aforementioned electrochemical device, which simplifies the connection of structural units and improves preparation efficiency.

[0011] In particular, according to one aspect of the present invention, an electrochemical device simulating biological signals is provided, comprising:

[0012] N dual-gate structural units, each dual-gate unit comprising:

[0013] Lower gate;

[0014] A first electrolyte layer disposed on the lower gate;

[0015] The source electrode and drain electrode are separated from each other and are disposed on the first electrolyte layer.

[0016] A channel is disposed on the first electrolyte layer and located between the source electrode and the drain electrode;

[0017] A second electrolyte layer is disposed above the channel; and

[0018] The upper gate is disposed on the second electrolyte layer;

[0019] Where N is an integer greater than or equal to 2, one of the lower gate and the upper gate of each double-gate structure unit forms a common gate with one of the lower gates and the upper gates of each of the other double-gate structure units; and

[0020] The electrochemical device is configured to, by adjusting the different relative relationships between the thicknesses of the electrolyte layers of K (1≤K<N) double-gate structure units that are not in contact with the common gate and the thicknesses of the electrolyte layers of the remaining (N-K) double-gate structure units that are in contact with the common gate, at different pulse trigger voltages V G When any gate of the K double-gate structure units is triggered, different regulation effects of the channel current change or the channel resistance change of each double-gate structure unit are achieved to simulate the mutual induction effect of organisms.

[0021] Optionally, the regulation effects include at least one of the following:

[0022] The first regulation effect: when the pulse trigger voltage V G is less than the critical pulse trigger voltage V C of the triggered gate, the channel current change ΔI of the K double-gate structure units is less than 0, and the channel current change ΔI of the remaining (N-K) double-gate structure units is less than 0, to simulate the simultaneous inhibitory effect of neural activities;

[0023] The second regulation effect: when the pulse trigger voltage V G =V C , the channel current change ΔI of the K double-gate structure units is 0, and the channel current change ΔI of the remaining (N-K) double-gate structure units is 0, to simulate the resting effect of neural activities;

[0024] The third regulation effect: when the pulse trigger voltage V G >V C , the channel current change ΔI of the K double-gate structure units is greater than 0, and the channel current change ΔI of the remaining (N-K) double-gate structure units is greater than 0, to simulate the simultaneous enhancement effect of neural activities;

[0025] The fourth regulation effect: when the pulse trigger voltage V G >V C , the channel current change ΔI of the K double-gate structure units is less than 0, and the channel current change ΔI of the remaining (N-K) double-gate structure units is greater than 0, to simulate the positive induction effect of neural activities;

[0026] The fifth regulation effect: when the pulse trigger voltage V G >V C , the channel current change ΔI of the K double-gate structure units is greater than 0, and the channel current change ΔI of the remaining (N-K) double-gate structure units is less than 0, to simulate the negative induction effect of neural activities.

[0027] Optionally, the lower gates of all dual-gate structure units form a common gate;

[0028] The electrochemical device is configured as follows:

[0029] When the thickness of the second electrolyte layer of the K dual-gate structural units is greater than the thickness of the first electrolyte layer of the remaining (NK) dual-gate structural units, under different pulse trigger voltages V G When any gate of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, the third regulation effect, and the fourth regulation effect are achieved.

[0030] When the thickness of the second electrolyte layer of the K dual-gate structural units is less than the thickness of the first electrolyte layer of the remaining (NK) dual-gate structural units, under different pulse trigger voltages V G When any gate of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, the third regulation effect, and the fifth regulation effect are achieved.

[0031] When the thickness of the second electrolyte layer of the K dual-gate structural units is equal to the thickness of the first electrolyte layer of the remaining (NK) dual-gate structural units, under different pulse trigger voltages V G When any gate of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, and the third regulation effect are achieved.

[0032] Optionally, the upper gates of all dual-gate structure units form a common gate;

[0033] The electrochemical device is configured as follows:

[0034] When the thickness of the first electrolyte layer of the K dual-gate structural units is greater than the thickness of the second electrolyte layer of the remaining (NK) dual-gate structural units, under different pulse trigger voltages V G When any gate of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, the third regulation effect, and the fourth regulation effect are achieved.

[0035] When the thickness of the first electrolyte layer of the K dual-gate structural units is less than the thickness of the second electrolyte layer of the remaining (NK) dual-gate structural units, under different pulse trigger voltages V G When any gate of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, the third regulation effect, and the fifth regulation effect are achieved.

[0036] When the thickness of the first electrolyte layer of the K dual-gate structural units is equal to the thickness of the second electrolyte layer of the remaining (NK) dual-gate structural units, under different pulse trigger voltages VG When any gate of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, and the third regulation effect are achieved.

[0037] Optionally, the first electrolyte layer and the second electrolyte layer are made of materials that facilitate the migration and movement of ions;

[0038] Preferably, the first electrolyte layer and the second electrolyte layer are gel electrolytes.

[0039] Optionally, the materials of the first electrolyte layer and the second electrolyte layer in each dual-gate structure unit may be different or the same; and

[0040] The first and second electrolyte layers in each dual-gate structure unit have the same acidity or alkalinity.

[0041] Optionally, the thickness h of each layer in the first electrolyte layer and the second electrolyte layer is within any of the following ranges:

[0042] 0.1nm≤h<100nm, 100nm≤h<500nm, 500nm≤h<10μm, 10μm≤h<50μm, 50μm≤h<100μm, 500μm≤h<1mm, h≥1mm.

[0043] Optionally, one of the lower gate and upper gate of each dual-gate structure unit is connected to one of the lower gate and upper gate of other dual-gate structure units via a wire to form a common gate; or

[0044] One of the lower gate and one of the upper gate of each dual-gate structure unit shares the same gate electrode with one of the lower gate and one of the upper gate of other dual-gate structure units to form a common gate.

[0045] According to another aspect of the present invention, a method for fabricating the electrochemical device according to any one of the preceding claims is also provided, comprising:

[0046] Each dual-gate structure unit is fabricated independently, wherein, when fabricating each dual-gate structure unit, the lower gate, the first electrolyte layer, the source electrode and the drain electrode, the channel, the second electrolyte layer and the upper gate of the dual-gate structure unit are fabricated sequentially.

[0047] A common gate is formed by connecting one of the lower gate and one of the upper gate of each dual-gate structure unit to one of the lower gate and one of the upper gate of each other dual-gate structure unit through a wire.

[0048] According to another aspect of the present invention, a method for fabricating the electrochemical device according to any one of the preceding claims is also provided, comprising:

[0049] Fabrication of a common gate electrode;

[0050] Using a common gate electrode as the common gate of an electrochemical device, the common gate electrode is divided into N regions using insulating material;

[0051] In each region, other structural layers other than the common gate of each dual-gate structural unit are sequentially fabricated. The other structural layers include a first electrolyte layer, a source electrode and a drain electrode, a channel, a second electrolyte layer and another gate other than the common gate.

[0052] The electrochemical device for simulating biological signals provided by this invention consists of N dual-gate structural units. By making one of the lower gate and upper gate of each dual-gate structural unit form a common gate with one of the lower gate and upper gate of other dual-gate structural units, the correlation between structural units is realized, so that the regulation between each structural unit influences and restricts each other. By adjusting the thickness of the electrolyte layer and other conditions to change each dual-gate structural unit, the electrochemical device can exhibit global regulation and mutual induction of neural activity.

[0053] Furthermore, this invention forms a common gate by connecting one of the lower and upper gates of each dual-gate structural unit to one of the lower and upper gates of other dual-gate structural units using wires, or by having one of the lower and upper gates of each dual-gate structural unit share the same gate electrode with one of the lower and upper gates of other dual-gate structural units to form a common gate. Without the need to introduce electronic components such as resistors, capacitors, inductors, and diodes to connect the structural units, the mutual induction effect when a pulse voltage triggers some structural units in the electrochemical device can be realized. This effectively eliminates the complex circuit connections in integrated circuits, simplifies the connection between structural units of electrochemical devices, and helps to reduce energy consumption.

[0054] Furthermore, by adjusting the thickness of the electrolyte layer of the structural unit of the electrochemical device, specifically by adjusting the relative relationship between the thickness of the electrolyte layer of the K dual-gate structural units that are not in contact with the common gate and the thickness of the electrolyte layer of the remaining (NK) dual-gate structural units that are in contact with the common gate, the present invention can simulate the simultaneous enhancement, simultaneous inhibition, quiescence, positive induction, and negative induction effects in the neural activity of organisms, thus expanding the interaction between biomimetic structural units.

[0055] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and in order to make the above and other objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described below.

[0056] The above and other objects, advantages and features of the present invention will become more apparent to those skilled in the art from the following detailed description of specific embodiments of the invention in conjunction with the accompanying drawings. Attached Figure Description

[0057] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0058] Figure 1 This is a schematic diagram of the structure of an electrochemical device simulating biological signals according to an embodiment of the present invention;

[0059] Figure 2 This is a schematic diagram of the structure of an electrochemical device simulating biological signals according to another embodiment of the present invention;

[0060] Figure 3 This is a schematic diagram of the structure of a dual-gate structure unit in an electrochemical device according to an embodiment of the present invention;

[0061] Figure 4 The diagram illustrates the channel current variation of the lower and upper gates of the dual-gate structure unit in Embodiment 1 of the present invention under voltage regulation, demonstrating the long-term plasticity simulation of the electrochemical device.

[0062] Figure 5 This illustrates the different channel current variations achieved by the dual-gate structure unit in Embodiment 1 of the present invention when the gate and the upper gate are triggered by the same pulse voltage;

[0063] Figure 6 The diagram illustrates the changes in the channel currents of dual-gate structure units A and B when the upper gate of dual-gate structure unit A is triggered by different pulse voltages in the electrochemical device of Embodiment 3 of the present invention.

[0064] Figure 7 The diagram illustrates the changes in the channel currents of dual-gate structure units A and B when the upper gate of dual-gate structure unit A is triggered by different pulse voltages in the electrochemical device of Embodiment 5 of the present invention.

[0065] Figure 8 This illustrates the case in Embodiment 6 of the present invention where the channel currents of two dual-gate structural units A and B are simultaneously suppressed and simultaneously enhanced under pulse voltage triggering of the common gate of the electrochemical device.

[0066] Figure 9 This illustrates the situation where the channel currents of dual-gate structure units A, B, and C in the electrochemical device of embodiment 12 of the present invention are simultaneously suppressed and simultaneously enhanced when the upper gates of the dual-gate structure units A and B are simultaneously triggered by a pulse voltage.

[0067] Figure 10This illustrates the case where the channel currents of dual-gate structure units A, B, and C in the electrochemical device of Embodiment 12 of the present invention are at rest when the upper gates of the dual-gate structure units A and B are simultaneously triggered by a pulse voltage. Detailed Implementation

[0068] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0069] To address the above problems, this invention proposes an electrochemical device that simulates biological signals.

[0070] Figure 1 A schematic diagram of the structure of an electrochemical device simulating biological signals according to an embodiment of the present invention is shown. Figure 2 A schematic diagram of an electrochemical device simulating biological signals according to another embodiment of the present invention is shown. See also Figure 1 and Figure 2 As shown, the electrochemical device for simulating biological signals provided in this embodiment of the invention generally includes N dual-gate structural units (also simply referred to as structural units), where N is an integer greater than or equal to 2. It should be noted that in the accompanying drawings, A, B, N, etc., represent a dual-gate structural unit, where A can be understood as referring to the first dual-gate structural unit, B can be understood as referring to the second dual-gate structural unit, and so on, with N referring to the Nth dual-gate structural unit. The terms "first," "second," and "Nth" are only used to distinguish each dual-gate structural unit and do not indicate their spatial arrangement or connection order.

[0071] Figure 3 A schematic diagram of a dual-gate structure unit in an electrochemical device according to an embodiment of the present invention is shown. Figure 3As shown, each double-gate structure unit may include, from bottom to top, a lower gate 1, a first electrolyte layer 2 disposed on the lower gate 1, source electrodes 3 and drain electrodes 4 separated from each other and disposed on the first electrolyte layer 2, a channel 5 disposed on the first electrolyte layer 2 and between the source electrodes 3 and the drain electrodes 4, a second electrolyte layer 6 disposed above the channel 5, and an upper gate 7 disposed on the second electrolyte layer 6. In this electrochemical device, one of the lower gate 1 and the upper gate 7 of each double-gate structure unit forms a common gate with one of the lower gate 1 and the upper gate 7 of each of the other double-gate structure units. And by adjusting the relative relationship between the thicknesses of the electrolyte layers of K (1 ≤ K < N, that is, K is an integer greater than or equal to 1 and less than N) double-gate structure units that are not in contact with the common gate and the thicknesses of the electrolyte layers of the remaining (N - K) double-gate structure units that are in contact with the common gate, at different pulse trigger voltages V G When triggering any gate of the K double-gate structure units, the electrochemical device can achieve different regulation effects on the channel 5 current changes of each double-gate structure unit to simulate the mutual induction effect of organisms.

[0072] The electrochemical device for simulating biological signals provided by the embodiments of the present invention is composed of N double-gate structure units. By making one of the lower gate 1 and the upper gate 7 of each double-gate structure unit form a common gate with one of the lower gate 1 and the upper gate 7 of each of the other double-gate structure units, the associative effect between the structure units is realized, so that the regulation between each structure unit affects and restricts each other. And by adjusting conditions such as the thickness of the electrolyte layer to change each double-gate structure unit, the electrochemical device can exhibit the global regulation and mutual induction effect of neural activities.

[0073] In some embodiments, as Figure 1 shown, one of the lower gate 1 and the upper gate 7 of each double-gate structure unit and one of the lower gate 1 and the upper gate 7 of each of the other double-gate structure units can be connected in series through a wire 8 to form a common gate. In other embodiments, as Figure 2 shown, one of the lower gate 1 and the upper gate 7 of each double-gate structure unit and one of the lower gate 1 and the upper gate 7 of each of the other double-gate structure units can share the same gate electrode 9 to form a common gate. It should be noted that Figure 2 although it specifically shows the way of using the gate electrode 9 as the lower gate 1 of each structure unit to form a common gate, the present invention is not limited to this. By connecting one of the gates of each structure unit in the electrochemical device with a wire 8 or sharing the same gate electrode 9, the connection method between the structure units is simplified, and electronic components such as resistors, capacitors, inductors, and diodes commonly used in integrated circuits are eliminated, thereby reducing the overall energy consumption of the electrochemical device. In addition, the integrated electrochemical device with a common gate structure can achieve multiple signal outputs under a single signal input and multiple signal outputs under multiple signal inputs.

[0074] In applications, by adjusting the thickness of the electrolyte layer of each structural unit and using different pulse trigger voltages, a variety of different regulatory effects can be achieved to efficiently simulate the global regulation and mutual induction functions of organisms.

[0075] Specifically, these control effects may include one or more of the following: First control effect: when the pulse trigger voltage V G Less than the critical pulse trigger voltage V of the triggered gate C When the channel current change ΔI of the triggered K dual-gate structure units is less than 0, the channel current change ΔI of the remaining (NK) dual-gate structure units is also less than 0, to simulate the simultaneous inhibition of neural activity. Second modulation effect: When the pulse trigger voltage V... G =V C When the channel current change ΔI = 0 in the K triggered dual-gate structure units, the channel current change ΔI = 0 in the remaining (NK) dual-gate structure units, to simulate the resting effect of neural activity. Third modulation effect: When the pulse trigger voltage V... G >V C When the channel current change ΔI > 0 in the K triggered dual-gate structural units, the channel current change ΔI > 0 in the remaining (NK) dual-gate structural units, thus simulating neural activity while enhancing its effect. Fourth regulatory effect: When the pulse trigger voltage V... G >V C When the channel current change ΔI of the triggered K dual-gate structural units is <0, the channel current change ΔI of the remaining (NK) dual-gate structural units is >0, simulating the positive induction effect of neural activity. Fifth regulatory effect: When the pulse trigger voltage V... G >V C When the channel current change ΔI of the triggered K dual-gate structural units is greater than 0, the channel current change ΔI of the remaining (NK) dual-gate structural units is less than 0, in order to simulate the negative induction effect of neural activity.

[0076] In a further embodiment, when the thickness of the first electrolyte layer 2 and the second electrolyte layer 6 of each structural unit in the electrochemical device varies randomly, one of the above-mentioned control effects can be achieved.

[0077] The thicknesses of the first electrolyte layer 2 and the second electrolyte layer 6 of each structural unit of the electrochemical device can be selected according to the desired modulation effect to achieve different simulation purposes. In a further embodiment, the lower gate 1 of all dual-gate structural units of the electrochemical device forms a common gate. In this connection mode, when the thickness of the second electrolyte layer 6 of K dual-gate structural units is greater than the thickness of the first electrolyte layer 2 of the remaining (NK) dual-gate structural units, under different pulse trigger voltages V G When any gate of any of the K dual-gate structural units is triggered, a first, second, third, and fourth control effects can be achieved. When the thickness of the second electrolyte layer 6 of the K dual-gate structural units is less than the thickness of the first electrolyte layer 2 of the remaining (NK) dual-gate structural units, different pulse trigger voltages V... G When any gate of any of the K dual-gate structural units is triggered, a first, second, third, and fifth control effects can be achieved. When the thickness of the second electrolyte layer 6 of the K dual-gate structural units is equal to the thickness of the first electrolyte layer 2 of the remaining (NK) dual-gate structural units, different pulse trigger voltages V... G Triggering any gate of any of the K dual-gate structure units can achieve the first, second, and third control effects.

[0078] In another, further embodiment, the upper gate 7 of all dual-gate structural units of the electrochemical device forms a common gate. In this connection configuration, when the thickness of the first electrolyte layer 2 of the K dual-gate structural units is greater than the thickness of the second electrolyte layer 6 of the remaining (NK) dual-gate structural units, different pulse trigger voltages V... G When any gate of any of the K dual-gate structural units is triggered, a first, second, third, and fourth control effects can be achieved. When the thickness of the first electrolyte layer 2 of the K dual-gate structural units is less than the thickness of the second electrolyte layer 6 of the remaining (NK) dual-gate structural units, different pulse trigger voltages V... G When any gate of the K dual-gate structural units is triggered, a first, second, third, and fifth control effects can be achieved. When the thickness of the first electrolyte layer 2 of the K dual-gate structural units is equal to the thickness of the second electrolyte layer 6 of the remaining (NK) dual-gate structural units, different pulse trigger voltages V... G Triggering any gate of any of the K dual-gate structure units can achieve the first, second, and third control effects.

[0079] In embodiments of the present invention, under different common-gate connection methods, by adjusting the relative relationship between the thickness of the electrolyte layer of the K dual-gate structural units not in contact with the common gate and the thickness of the electrolyte layer of the remaining (NK) dual-gate structural units in contact with the common gate, the simultaneous enhancement, simultaneous inhibition, quiescence, positive induction, and negative induction effects in biological neural activity can be simulated. Specifically, when a pulse voltage triggers an enhancement of the channel current of some structural units in the electrochemical device, the channel current of the remaining structural units sharing the common gate is suppressed, exhibiting a negative induction phenomenon in neural activity; conversely, when a pulse voltage triggers an suppression of the channel current of some structural units in the electrochemical device, the channel current of the remaining structural units sharing the common gate is enhanced, exhibiting a positive induction phenomenon in neural activity. Compared to existing biomimetic electrochemical devices, the common-gate integrated electrochemical device of the present invention, while simulating biological synaptic behaviors such as short-term and long-term plasticity in biological neural transmission, expands the interaction between biomimetic structural units.

[0080] Of course, the channel resistance change ΔR can also be used instead of the channel current change ΔI to represent different control effects. The sign of the channel resistance change ΔR is opposite to that of the channel current change ΔI; that is, if the channel current change ΔI < 0, then the channel resistance change ΔR > 0, and vice versa. If the channel current change ΔI > 0, then the channel resistance change ΔR < 0, and if the channel current change ΔI = 0, then the channel resistance change ΔR = 0. For example, in the first control effect, when the pulse trigger voltage V... G Less than the critical pulse trigger voltage V of the triggered gate C When the channel resistance change ΔR > 0 for the K triggered dual-gate structural units, the channel resistance change ΔR > 0 for the remaining (NK) dual-gate structural units, simulating the simultaneous inhibition of neural activity. Other modulation effects follow the same principle. Since the relationship between current and resistance is fixed at a given voltage, whether the modulation effect is reflected by the channel current change ΔI or the channel resistance change ΔR, it will not affect the implementation of the present invention.

[0081] In some embodiments, the first electrolyte layer 2 and the second electrolyte layer 6 of each structural unit in the electrochemical device are made of materials that facilitate ion migration, thereby enabling more sensitive reflection of changes in channel current or resistance and resulting in better simulation performance. Preferably, the first electrolyte layer 2 and the second electrolyte layer 6 can be made of gel electrolyte, which ensures both the sensitivity of the device and facilitates the uniform preparation of the electrolyte layer.

[0082] In some embodiments, the materials of the first electrolyte layer 2 and the second electrolyte layer 6 in each dual-gate structure unit may be different. In other embodiments, the materials of the first electrolyte layer 2 and the second electrolyte layer 6 in each dual-gate structure unit may be the same. However, the acidity or alkalinity of the materials of the first electrolyte layer 2 and the second electrolyte layer 6 in each dual-gate structure unit should be the same to ensure the normal operation of the electrochemical device. The same acidity or alkalinity as used herein refers to being both acidic (pH < 7), both neutral (pH = 7), or both alkaline (pH > 7). Preferably, the first electrolyte layer 2 and the second electrolyte layer 6 may be made of the same acid-base gel electrolyte material, such as an acidic gel electrolyte material.

[0083] In the electrochemical device of this invention, the thickness of each electrolyte layer is adjustable. Let h represent the thickness of each electrolyte layer. The following thickness ranges can be designed and selected according to actual application conditions and needs: 0.1nm ≤ h < 100nm, 100nm ≤ h < 500nm, 500nm ≤ h < 10μm, 10μm ≤ h < 50μm, 50μm ≤ h < 100μm, 500μm ≤ h < 1mm, or h ≥ 1mm. Preferably, the thickness of the electrolyte layer is within the range of 500nm ≤ h < 10μm. In practical applications, the thickness range of the electrolyte layer can be selected according to the size of the channel 5, which will be described in detail later. Furthermore, in electrochemical devices, the thickness h of each electrolyte layer of all structural units can vary within one of the above-mentioned ranges, for example, all within the range of 500nm ≤ h < 10μm; or the thickness h of each electrolyte layer (i.e., the first electrolyte layer 2 and the second electrolyte layer 6) of different structural units can vary within different ranges mentioned above, for example, the thickness h of each electrolyte layer of one structural unit is within the range of 100nm ≤ h < 500nm, and the thickness h of each electrolyte layer of another structural unit is within the range of 500nm ≤ h < 10μm.

[0084] The upper gate 7 and the lower gate 1 (hereinafter referred to as gate materials) are made of materials with good electrical conductivity. In some embodiments, the gate materials may include, but are not limited to, carbon nanotube-based materials. Carbon nanotube-based materials include carbon nanotube films, composite materials of carbon nanotube films and conductive polymers, carbon nanotube-graphene composite materials, etc.; wherein, the conductive polymers include, but are not limited to, polyaniline, polypyrrole, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), polythiophene, etc. In other embodiments, the gate materials may also include, but are not limited to, metal materials such as gold, aluminum, titanium, copper, palladium, scandium, tungsten, nickel, etc.

[0085] The channel 5 material is selected from materials with a certain degree of conductivity. Specifically, the channel 5 material may include, but is not limited to, materials with a conductivity greater than or equal to 0.001 S / cm. In some optional embodiments, the channel 5 material may include, but is not limited to, thin film materials such as carbon nanotube films, graphene films, graphdiyne films, black phosphorus films, disulfide films, carbon nanotube-graphene composite structures, and two-dimensional perovskite materials.

[0086] Furthermore, the channel 5 material can be subjected to plasma treatment to reduce the conductivity of the channel 5, thereby further reducing the energy consumption of the electrochemical device.

[0087] The dimensions of the channel 5 in each structural unit of the electrochemical device can be designed and selected according to actual application and requirements. Let the length of the channel 5 be denoted as l, then the following length ranges can be designed and selected according to actual application and requirements: 0.1nm≤l<100nm, 100nm≤l<500nm, 500nm≤l<1μm, 1μm≤l<100μm, 100μm≤l<5mm, 5mm≤l<10mm, l≥10mm. Preferably, the length of the channel 5 is within the range of 100μm≤l<5mm. Let the width of the channel 5 be denoted as w, then the following width ranges can be designed and selected according to actual application and requirements: 0.1nm≤w<100nm, 100nm≤w<500nm, 500nm≤w<1μm, 1μm≤w<100μm, 100μm≤w<5mm, 5mm≤w<10mm, w≥10mm. Preferably, the width of the channel 5 is in the range of 100μm≤w<5mm.

[0088] Electrochemical devices can be macroscopic or micro / nanoscale devices. When the length l and width w of the channel 5 satisfy 0.1 nm ≤ l < 1 mm and 0.1 nm ≤ w < 1 mm, the electrochemical device is a micro / nanoscale device. When the length l and width w of the channel 5 satisfy l ≥ 1 mm and w ≥ 1 mm, the electrochemical device is a macroscopic scale device. Micro / nanoscale devices are advantageous for large-scale integration, while macroscopic scale devices can be applied in biomimetic robots or in combination with sensor components. By selecting different channel sizes, the application scenarios of electrochemical devices can be broadened.

[0089] Furthermore, the thickness of the electrolyte layer can be selected according to the dimensions of the channel 5. For example, when the dimensions of the channel 5 are at the micro-nano scale (e.g., the length l of the channel 5 is 100 nm and the width w is 100 nm), the thicknesses of the first electrolyte layer 2 and the second electrolyte layer 6 can be selected within the range of 100 nm ≤ h < 500 nm, 500 nm ≤ h < 10 μm, etc. When the dimensions of the channel 5 are at the macro-scale (e.g., the length l of the channel 5 is 2 mm and the width w is 2 mm), the thicknesses of the first electrolyte layer 2 and the second electrolyte layer 6 can be selected within the range of 10 μm ≤ h < 50 μm, 50 μm ≤ h < 100 μm, etc.

[0090] In some embodiments, when the electrochemical device employs different dual-gate structure units, electrolyte layers of different thicknesses and / or different channel sizes may be used between the dual-gate structure units.

[0091] The source electrode 3 and drain electrode 4 may be made of conductive materials. In some embodiments, the source electrode 3 and drain electrode 4 may be made of conductive metals, including but not limited to at least one of gold, aluminum, titanium, copper, palladium, scandium, tungsten, and nickel. In other embodiments, the source electrode 3 and drain electrode 4 may be made of carbon nanotube thin films.

[0092] In some embodiments, the electrochemical device can be self-supporting and formed as a flexible device.

[0093] In other embodiments, the electrochemical device may be attached to an insulating substrate. The insulating substrate may be a solid, rigid substrate, including but not limited to glass substrates, silicon wafers, and polytetrafluoroethylene sheets. The insulating substrate may also be a flexible substrate, including but not limited to polyethylene terephthalate films, polyimide films, polydimethylsiloxane films, polymethyl methacrylate films, polyvinyl acetate films, paper, and fabrics.

[0094] Based on the same technical concept, embodiments of the present invention also provide a method for fabricating an electrochemical device having the structure described in any of the foregoing embodiments or combinations thereof. Depending on the common-gate connection method of the electrochemical device, different fabrication methods can be employed.

[0095] The first preparation method: separate preparation.

[0096] First, each dual-gate structure unit is fabricated independently. In fabricating each dual-gate structure unit, the lower gate 1, the first electrolyte layer 2, the source electrode 3 and the drain electrode 4, the channel 5, the second electrolyte layer 6 and the upper gate 7 of the dual-gate structure unit are fabricated sequentially, that is, each dual-gate structure unit is fabricated independently in a layer-by-layer manner.

[0097] Then, one of the lower gate 1 and the upper gate 7 of each dual-gate structure unit is connected (in series) to one of the lower gate 1 and the upper gate 7 of each other dual-gate structure unit through wire 8 to form a common gate.

[0098] In one specific embodiment, the method for fabricating the electrochemical device may include the following steps:

[0099] Step 1: Lay out highly conductive carbon nanotube material or metal material on an insulating substrate to form the lower gate 1.

[0100] Step 2: Apply gel electrolyte to the lower gate 1 by means of spin coating or drop coating to form the first electrolyte layer 2.

[0101] Step 3: Prepare source electrode 3 and drain electrode 4 on the first electrolyte layer 2.

[0102] Step 4: Cover the middle region surrounded by source electrode 3 and drain electrode 4 with a mask layer, and transfer the channel material to the window of the mask layer to form channel 5.

[0103] Step 5: Apply gel electrolyte above channel 5 by means of homogenization or drop coating to form a second electrolyte layer 6.

[0104] Step 6: Fabricate the upper gate 7 in the region above the second electrolyte layer 6 corresponding to the position of the channel 5.

[0105] In the above preparation process, different speeds can be used in the two spin coating processes, or different drop volumes can be used in the two drop coating processes, so as to form a first electrolyte layer 2 and a second electrolyte layer 6 with different thicknesses.

[0106] Step 7: Repeat steps 1 through 6 to prepare multiple dual-gate structure units.

[0107] Step 8: Connect one of the gates of each dual-gate structure unit through wire 8.

[0108] It should be noted that the gates connected by wires in different dual-gate structure units can be different. For example, the upper gate 7 of one dual-gate structure unit can be connected to the lower gate 1 of another dual-gate structure unit through wire 8.

[0109] In some embodiments, when fabricating a dual-gate structure unit, the upper gate 7 / second electrolyte layer 6 and the lower gate 1 / first electrolyte layer 2 can be fabricated separately. After the source electrode 3, drain electrode 4 and channel 5 are fabricated on the first electrolyte layer 2, the independently fabricated upper gate 7 / second electrolyte layer 6 is transferred to the channel 5 to complete the fabrication of the structure unit.

[0110] The number and combination of structural units connected in series by the conductors can be selected independently according to application needs.

[0111] The second preparation method: integrated preparation.

[0112] First, a common gate electrode 9 is prepared and used as the common gate of the electrochemical device. The common gate electrode 9 is divided into N regions using an insulating material.

[0113] Then, other structural layers other than the common gate are sequentially fabricated on each region for each dual-gate structural unit. The other structural layers include the first electrolyte layer 2, the source electrode 3 and the drain electrode 4, the channel 5, the second electrolyte layer 6, and another gate other than the common gate.

[0114] In one specific embodiment, the method for fabricating the electrochemical device may include the following steps:

[0115] Step 1: Lay the lower gate 1 as a common gate on the insulating substrate. The area of ​​the lower gate 1 can be adjusted according to the number of structural units to be fabricated.

[0116] Step 2: Divide the lower gate 1 into two or more regions using an insulating material. The insulating material is selected from one of the following: polyethylene terephthalate film, polyimide film, polydimethylsiloxane film, polymethyl methacrylate film, polyvinyl acetate film, etc.

[0117] Step 3: Prepare the first electrolyte layer 2 on each of the above-mentioned separated areas by means of homogenization or drop coating.

[0118] Step 4: Prepare source electrode 3 and drain electrode 4 at corresponding positions on each of the first electrolyte layers 2.

[0119] Step 5: Cover the intermediate region surrounded by the source electrode 3 and drain electrode 4 of each first electrolyte layer 2 with a mask layer, and transfer the channel material to the window of the mask layer to form the channel 5. The window size of the mask layer in each region can be the same or different.

[0120] Step 6: Prepare the second electrolyte layer 6 on each channel 5 by means of homogenization or drop coating.

[0121] Step 7: Fabricate the gate 7 in the region above each second electrolyte layer 6 corresponding to the position of the channel 5.

[0122] In this fabrication method, structural layers on multiple regions of the lower gate 1 are fabricated simultaneously.

[0123] In some embodiments, when fabricating an electrochemical device, the upper gate 7 / second electrolyte layer 6 can be fabricated separately first. After the lower gate 1 / first electrolyte layer 2 / source electrode 3 and drain electrode 4 / channel 5 of multiple structural units are fabricated, the separately fabricated upper gate 7 / second electrolyte layer 6 is transferred onto the channel 5 to complete the fabrication of the electrochemical device.

[0124] Furthermore, the thickness of the two electrolyte layers in each prepared structural unit can be different, and the thickness of the two electrolyte layers can be controlled by controlling the spin coating speed or the drop coating volume.

[0125] Furthermore, the dimensions of the channels 5 in each of the prepared structural units can be adjusted according to actual needs.

[0126] The method for fabricating electrochemical devices provided by this invention can simplify the connection of structural units and improve fabrication efficiency.

[0127] The foregoing has described various embodiments of the electrochemical device for simulating biological signals and its preparation method of the present invention. The following specific examples illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0128] Example 1: Carbon nanotube-based dual-gate structure unit

[0129] In this embodiment, the fabrication process of the carbon nanotube-based dual-gate structure unit includes:

[0130] 1. Preparation stage: A single-layer carbon nanotube film was prepared by floating catalysis; a carbon nanotube / polyaniline composite film was prepared by electroplating; and polyvinyl alcohol (PVA) and phosphoric acid were mixed at a mass ratio of 10:1 to form a gel electrolyte for later use.

[0131] 2. The pre-prepared carbon nanotube / polyaniline composite film is laid flat on a flexible polyethylene terephthalate (PET) substrate to form the lower gate 1.

[0132] 3. Spin-coat the gel electrolyte onto the carbon nanotube / polyaniline composite film at a spin speed of 5000 RPM, and cure it under the irradiation of a baking lamp to form the first electrolyte layer 2.

[0133] 4. A source electrode 3 and a drain electrode 4 are prepared above the first electrolyte layer. The source electrode 3 and the drain electrode 4 are made of palladium metal.

[0134] 5. In the middle region surrounded by the source electrode 3 and the drain electrode 4, polyethylene terephthalate is used as a mask, the channel part is hollowed out, and a carbon nanotube film is attached to prepare the channel 5.

[0135] 6. Spin-coat the gel electrolyte onto the channel 5 at a spin speed of 3000 RPM and cure it under a heat lamp. After complete curing, remove the mask to form the second electrolyte layer 6.

[0136] 7. Transfer the carbon nanotube / polyaniline composite film material onto the prepared second electrolyte layer 6 to serve as the upper gate 7.

[0137] The dual-gate structure unit has been fabricated. Since the electrochemical device is on the PET substrate, it can be flexibly bent. At the same time, the electrochemical device can be directly removed from the PET substrate after curing, thus achieving self-support.

[0138] The fabricated dual-gate structure unit was measured using a Keithley 4200 semiconductor parameter analyzer, and a pulse signal generated by a signal generator was used to simulate the triggering process of biological signals. During the measurement, the current between the source and drain electrodes was measured using a constant voltage method, set to 0.1V, and the gate voltage was measured using a pulse voltage.

[0139] When a pulse voltage V is applied to the upper gate 7 and lower gate 1 of the dual-gate structure unit respectively G =0.5V <V C The test results of the channel current value when the pulse duration is 500ms are as follows: Figure 4 As shown, a long-term plasticity simulation of the dual-gate structure unit of this embodiment 1 is presented.

[0140] When using pulse voltage V G =5V>V C The test results of the current change in channel 5 when the lower gate 1 and the upper gate 7 are triggered by pulses with a duration of 10ms are as follows: Figure 5 As shown. By Figure 5 It can be seen that when a positive pulse voltage greater than the critical pulse trigger voltage is applied to the lower gate 1, it causes the channel current to be suppressed, while when it is applied to the upper gate 7, it causes the channel current to be enhanced.

[0141] In addition, the test results of the dual-gate structure unit under bending conditions are consistent with those under normal conditions.

[0142] Example 2: Carbon nanotube-based dual-gate structure unit

[0143] In this embodiment, the fabrication process of the carbon nanotube-based dual-gate structure unit includes:

[0144] 1. The preparation stage is the same as in Example 1.

[0145] 2. The pre-prepared carbon nanotube / polyaniline composite film is laid flat on an insulating glass substrate to serve as the lower gate 1.

[0146] 3. Using a spin coater, a gel electrolyte is spin-coated onto the carbon nanotube / polyaniline composite film at a spin speed of 5000 RPM. The film is then cured under the irradiation of a baking lamp to form the first electrolyte layer 2.

[0147] 4. The pre-prepared carbon nanotube / polyaniline composite film is laid flat on a polyethylene film substrate. A gel electrolyte is spin-coated onto the carbon nanotube / polyaniline composite film at a spin speed of 3000 RPM. The film is then cured under the irradiation of a baking lamp to obtain the upper gate 7 / second electrolyte layer 6.

[0148] 5. A source electrode 3 and a drain electrode 4 are prepared on top of the first electrolyte layer 2 prepared in step 3. The source electrode 3 and the drain electrode 4 are made of carbon nanotube thin film.

[0149] 6. In the middle region surrounded by the source electrode 3 and the drain electrode 4, polyethylene terephthalate is used as a mask, the channel part is hollowed out, and a carbon nanotube film is attached to prepare the channel 5.

[0150] 7. Spin-coat the gel electrolyte again on top of channel 5. Set the spin-coating speed to 7000 RPM and cure it under a heat lamp. After complete curing, remove the mask to form the second electrolyte layer 6.

[0151] 8. Transfer the upper gate 7 / second electrolyte layer 6 prepared in step 4 from the polyethylene film substrate to the upper surface of the second electrolyte layer 6 prepared in step 7, ensuring good contact between the two electrolyte layers. At this point, the dual-gate structure unit is complete.

[0152] The measurements were performed in the same manner as in Example 1, and the results were similar to those in Example 1.

[0153] Example 3: Electrochemical device comprising two dual-gate structural units

[0154] In this embodiment, the fabrication process of the electrochemical device includes:

[0155] 1. The preparation stage is the same as in Example 1.

[0156] 2. The pre-prepared carbon nanotube / polyaniline composite film is laid flat on an insulating glass substrate, serving as the lower gate 1 of the dual-gate structure unit A and the dual-gate structure unit B, respectively.

[0157] 3. Using a spin coater, gel electrolytes are spin-coated onto the lower gate 1 of dual-gate structural unit A and dual-gate structural unit B respectively. The spin-coating speed is set to 5000 RPM. The gel electrolytes are cured under the illumination of a baking lamp to obtain the first electrolyte layer 2 of dual-gate structural unit A and dual-gate structural unit B.

[0158] 4. Source electrode 3 and drain electrode 4 are prepared by thermal evaporation deposition of palladium metal at the positions corresponding to the electrodes on each of the first electrolyte layers 2.

[0159] 5. A mask is prepared above each source electrode 3 and drain electrode 4. The mask is hollow to ensure that the carbon nanotube film only covers the channel position and attaches the carbon nanotube film to form the channel 5 of the dual gate structure unit A and the dual gate structure unit B respectively.

[0160] 6. Spin-coat the gel electrolyte again on each channel 5, wherein the spin-coating speed is set at 3000 RPM and cured under a heat lamp. After complete curing, remove the mask to form the second electrolyte layer 6 of each of the dual-gate structure unit A and dual-gate structure unit B.

[0161] 7. Integrate the carbon nanotube / polyaniline composite material into the position above the corresponding channel of each second electrolyte layer 6 obtained in step 6, as the upper gate 7 of each of the dual gate structure units A and B.

[0162] 8. The electrochemical device is fabricated by connecting the two lower gates 1 of the dual-gate structure units A and B in series using metal wires 8.

[0163] After the electrochemical device has cured, it is peeled off from the glass substrate, and the electrochemical device exhibits good flexibility.

[0164] The source-drain current was measured using a Keithley 4200 semiconductor parameter analyzer, and a pulse signal generated by a signal generator was used to simulate the triggering process of biological signals. During the experiment, the source-drain current was measured using a constant voltage method, with a measurement voltage of 0.1V set. The test used a pulse voltage V. G =2V <V C The pulse duration is 10ms, and the pulse voltage is V. G =5V>V C The pulse duration is 10ms. Two pulse voltages trigger the upper gate 7 of the dual-gate structure unit A respectively. Figure 6 When denoted as A7), the channel 5 (represented in the middle) of the dual-gate structure units A and B is tested. Figure 6 The current changes for A5 and B5 are shown in the figures below, and the results are as follows: Figure 6 As shown.

[0165] The electrochemical device in this embodiment includes N=2 identical dual-gate structural units. In each structural unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same material, and the thickness of the second electrolyte layer 6 in the structural unit is greater than the thickness of the first electrolyte layer 2. When K=1, and the pulse voltage triggers A7, [the following occurs]. Figure 6 It can be seen that when V G =2V <V C When V decreases, the currents in channels A5 and B5 decrease, achieving the first regulatory effect and simulating the simultaneous inhibition process between biological synapses; when V... G =5V>V C When the current in channel A5 decreases and the current in channel B5 increases, the fourth regulatory effect is achieved, simulating the positive induction process in biological synaptic induction. This electrochemical device achieves the increase or decrease of current in channels A5 and B5 under a single unidirectional voltage trigger of 2V or 5V, without the assistance of other voltages. This electrochemical device achieves the output of current in channels A5 and B5 under a single voltage trigger of 2V or 5V, i.e., a single signal input and multiple signal outputs. Furthermore, no other electronic components such as resistors, capacitors, inductors, or diodes are introduced in this process.

[0166] Electrochemical devices in a bent state were tested, and the results were the same as when they were not bent.

[0167] Example 4: Macroscale electrochemical device containing two dual-gate structural units

[0168] In this embodiment, the fabrication process of the electrochemical device includes:

[0169] 1. The preparation stage is the same as in Example 1.

[0170] 2. The pre-prepared carbon nanotube / polyaniline composite film is laid flat on an insulating glass substrate to serve as the lower gate 1.

[0171] 3. The lower gate 1 is divided into two regions, A and B, using polyethylene terephthalate thin film insulating material.

[0172] 4. Following steps 3 to 7 of Example 1, dual-gate structural unit A and dual-gate structural unit B are respectively fabricated in regions A and B, respectively. The size of each dual-gate structural unit is 4mm × 4mm. This completes the integrated fabrication of the macroscopic-scale electrochemical device.

[0173] The measurements were performed in the same manner as in Example 3, and the results were similar to those in Example 3.

[0174] Example 5: Electrochemical device comprising two dual-gate structural units

[0175] In this embodiment, the fabrication process of the electrochemical device includes:

[0176] 1. The preparation stage is the same as in Example 1.

[0177] 2. The pre-prepared carbon nanotube / polyaniline composite film is laid flat on an insulating glass substrate to form a gate electrode 9, which serves as the common lower gate 1 for each dual gate structure unit.

[0178] 3. Using polyethylene terephthalate thin film insulating material, the lower gate 1 is divided into two regions to prepare dual gate structure units A and B.

[0179] 4. Spin-coat the lower gate 1 with gel electrolyte at a spin speed of 2000 RPM and cure it under the irradiation of a baking lamp to obtain the first electrolyte layer 2 of the dual gate structure unit A and the dual gate structure unit B.

[0180] 5. Source electrode 3 and drain electrode 4 are prepared by thermal evaporation deposition of palladium metal at the positions corresponding to the electrodes on each of the first electrolyte layers 2.

[0181] 6. A mask is prepared above each source electrode 3 and drain electrode 4. The mask is hollow to ensure that the carbon nanotube film only covers the channel position and attaches the carbon nanotube film to form the channel 5 of the dual gate structure unit A and the dual gate structure unit B respectively.

[0182] 7. Spin-coat the gel electrolyte again on each channel 5, wherein the spin-coating speed is set at 5000 RPM and cured under a heat lamp. After complete curing, remove the mask to form the second electrolyte layer 6 of each of the dual-gate structure unit A and dual-gate structure unit B.

[0183] 8. Integrate the carbon nanotube / polyaniline composite material into the position above the corresponding channel of each second electrolyte layer 6 obtained in step 7, as the upper gate 7 of each of the dual gate structure units A and B.

[0184] 9. Remove the polyethylene terephthalate (PET) film insulating material used in step 3 to separate the different regions. The integrated fabrication of the electrochemical device is now complete.

[0185] The source-drain current was measured using a Keithley 4200 semiconductor parameter analyzer, and a pulse signal generated by a signal generator was used to simulate the triggering process of biological signals. During the experiment, the source-drain current was measured using a constant voltage method, with a measurement voltage of 0.1V set. The test used a pulse voltage V. G =2V <V C The pulse duration is 10ms, and the pulse voltage is V. G =7V>V C The pulse duration is 10ms. Two pulse voltages trigger the upper gate 7 of the dual-gate structure unit A respectively. Figure 7When denoted as A7), the channel 5 (represented in the middle) of the dual-gate structure units A and B is tested. Figure 7 The current changes for A5 and B5 are shown in the figures below, and the results are as follows: Figure 7 As shown.

[0186] The electrochemical device in this embodiment includes N=2 identical dual-gate structural units. In each structural unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same material, and the thickness of the second electrolyte layer 6 in each structural unit is less than the thickness of the first electrolyte layer 2. When K=1, and the pulse voltage triggers A7, [the following occurs]. Figure 7 It can be seen that when V G =2V <V C When V decreases, the currents in channels A5 and B5 decrease, achieving the first regulatory effect and simulating the simultaneous inhibition process between biological synapses; when V... G =7V>V C At this time, the current in channel A5 increases and the current in channel B5 decreases, achieving the fifth regulatory effect and simulating the negative induction process in biological synaptic induction. This electrochemical device achieves the increase or decrease of the current in channels A5 and B5 under a single unidirectional voltage of 2V or 7V trigger, without the assistance of other voltages. This electrochemical device achieves the output of the current in channels A5 and B5 under a single voltage trigger of 2V or 7V, i.e., a single signal input and multiple signal outputs. Furthermore, no other electronic components such as resistors, capacitors, inductors, or diodes are introduced in this process.

[0187] Example 6: Electrochemical device comprising two dual-gate structural units

[0188] In this embodiment, the fabrication process of the electrochemical device includes:

[0189] 1. The preparation stage is the same as in Example 1.

[0190] 2. Prepare the common gate electrode 9 and divide the region, which is the same as steps 2 and 3 in Example 5.

[0191] 3. Using a spin coater, a gel electrolyte is spin-coated onto the common gate electrode 9 (i.e., the common lower gate 1). The spin-coating speed is set to 5000 RPM, and the coating is cured to form the first electrolyte layer 2 of the dual gate structure unit A and the dual gate structure unit B.

[0192] 4. Prepare the upper gate 7 / second electrolyte layer 2 in the same way as step 4 in Example 2.

[0193] 5. Prepare the source electrode 3, drain electrode 4 and channel 5 of each of the dual-gate structure unit A and dual-gate structure unit B. The preparation method is the same as steps 5 and 6 in Example 5.

[0194] 6. A second electrolyte layer 6 is formed on top of the channel 5, and the preparation method is the same as step 7 in Example 2.

[0195] 7. Transfer the upper gate 7 / second electrolyte layer 6 prepared in step 4 from the polyethylene film substrate to the second electrolyte layer 6 prepared in step 6, ensuring good contact between the two electrolyte layers.

[0196] 8. Remove the polyethylene terephthalate (PET) film insulating material used in step 2 to separate the different regions. The integrated fabrication of the electrochemical device is now complete.

[0197] During testing, the common gate electrode 9 of the electrochemical device was voltage-triggered to change the channel current of the two structural units A and B. The test results are as follows: Figure 8 As shown, when the test uses pulse voltage V G =2V <V C When the pulse duration is 10ms, the channels of the two structural units A and B ( Figure 8 The currents of A5 and B5 (shown in the image) are both suppressed; pulse voltage V G =5V>V C When the pulse duration is 10ms, the channel currents of both structural units A and B are enhanced.

[0198] The electrochemical device in this embodiment includes N=2 identical dual-gate structural units. In each structural unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same material, and the thickness of the second electrolyte layer 6 in each structural unit is less than the thickness of the first electrolyte layer 2. When K=1, and the pulse voltage triggers the common gate electrode 9, the... Figure 8 It can be seen that when V G =2V <V C At that time, the first regulatory effect was achieved, simulating the simultaneous inhibition process between biological synapses; when V G =5V>V C At this time, the third regulatory effect was achieved, simulating the simultaneous enhancement process between biological synapses. This electrochemical device can increase or decrease the current in channels A5 and B5 under unidirectional voltage triggering only 2V or 5V, without the assistance of other voltages, realizing a single signal input and multiple signal outputs.

[0199] Example 7: Electrochemical device comprising two dual-gate structural units of different sizes

[0200] In this embodiment, the fabrication process of the electrochemical device includes:

[0201] 1. The preparation stage is the same as in Example 1.

[0202] 2. Prepare the common gate electrode 9, and prepare the first electrolyte layer 2, source electrode 3 and drain electrode 4 of each of the dual gate structure unit A and dual gate structure unit B. The preparation method is the same as steps 2 to 5 of Example 5.

[0203] 3. A 1mm×2mm mask is prepared above the source electrode 3 and drain electrode 4 of the dual-gate structure unit A, and a 2mm×4mm mask is prepared above the source electrode 3 and drain electrode 4 of the dual-gate structure unit B. Carbon nanotube films are attached to form channels 5 of the dual-gate structure units A and B with different sizes.

[0204] 4. Spin-coat the gel electrolyte again on each channel 5. Set the spin-coating speed to 5000 RPM. After complete curing, remove the mask to form the second electrolyte layer 6 of each of the dual-gate structure unit A and dual-gate structure unit B.

[0205] 5. The carbon nanotube / polyaniline composite film is transferred above each of the second electrolyte layers 6 to serve as the upper gate 7 of the dual-gate structural unit A and the dual-gate structural unit B, respectively. The electrochemical device containing two dual-gate structural units of different sizes is thus fabricated.

[0206] The test results of the electrochemical device in this embodiment are similar to those in Example 5.

[0207] Example 8: An electrochemical device comprising two dual-gate structural units of different sizes

[0208] In this embodiment, the fabrication process of the electrochemical device includes:

[0209] 1. Preparation stage: Prepare a single-chiral (6,5) carbon nanotube film as a channel material; prepare a carbon nanotube / polyaniline composite film as a gate material; mix polyvinyl alcohol (PVA) with phosphoric acid to form a gel electrolyte for later use.

[0210] 2. Prepare the lower gate 1 and the first electrolyte layer 2 of each of the dual-gate structure unit A and the dual-gate structure unit B. The preparation method is the same as steps 2 to 3 of Example 3.

[0211] 3. Attach narrow strips of carbon nanotubes above each first electrolyte layer 2 at positions corresponding to the lower gate 1 to form the source electrode 3 and drain electrode 4 of each of the dual gate structure units A and B.

[0212] 4. A 1 mm × 2 mm mask is prepared above the source electrode 3 and drain electrode 4 of the dual-gate structure unit A, and a 2 mm × 4 mm mask is prepared above the source electrode 3 and drain electrode 4 of the dual-gate structure unit B. A single-chiral (6,5) carbon nanotube film is attached to form the channels 5 of the dual-gate structure unit A and the dual-gate structure unit B with different sizes.

[0213] 5. Spin-coat the gel electrolyte again on each channel 5. Set the spin-coating speed to 2000 RPM. After complete curing, remove the mask to form the second electrolyte layer 6 of each of the dual-gate structure unit A and dual-gate structure unit B.

[0214] 6. The carbon nanotube / polyaniline composite material is transferred above each of the second electrolyte layers 6 to serve as the upper gate 7 of the dual gate structure unit A and the dual gate structure unit B respectively.

[0215] 7. An electrochemical device containing two dual-gate structural units of different sizes is fabricated by connecting the two lower gates 1 of dual-gate structural units A and B in series using metal wires 8.

[0216] The electrochemical device prepared in this embodiment is a macroscopic device comprising N=2 dual-gate structural units. The channel 5 area of ​​dual-gate structural unit B is larger than that of dual-gate structural unit A. High-purity (6,5) semiconducting carbon nanotubes are used as the channel material. The first electrolyte layer 2 and the second electrolyte layer 6 in the structural unit are made of the same material, and the thickness of the second electrolyte layer 6 is greater than the thickness of the first electrolyte layer 2. The test results of this electrochemical device are similar to those of Example 3, achieving both the first and fourth regulatory effects.

[0217] Example 9: Electrochemical device with two dual-gate structure units using different channel materials

[0218] The only difference between Example 9 and Example 8 is that the channel 5 of the dual-gate structure unit A uses a single-chiral (6,5) carbon nanotube film, while the channel 5 of the dual-gate structure unit B uses a graphene film. The dimensions of the channels of both dual-gate structure units are at the nanoscale. The test results of the electrochemical device in this example are similar to those in Example 3.

[0219] Example 10: Electrochemical device comprising two identical dual-gate structural units

[0220] The only difference between Example 10 and Example 5 is that the channel 5 of the dual-gate structure units A and B is formed using a graphene film, which is prepared by chemical vapor deposition. The test results of the electrochemical device in this example are similar to those in Example 5.

[0221] Example 11: Electrochemical device comprising two different dual-gate structural units

[0222] In this Example 11, the preparation process of the electrochemical device is similar to that in Example 3, except that:

[0223] (1) The spin coating speed of the first electrolyte layer 2 of the dual-gate structure unit A is set at 7000 RPM, and the spin coating speed of the first electrolyte layer 2 of the dual-gate structure unit B is set at 6000 RPM.

[0224] (2) The source electrode 3 and drain electrode 4 of the dual-gate structure units A and B are fabricated by carbon nanotube thin film deposition.

[0225] (3) The channels 5 of the dual-gate structure units A and B are each formed by carbon nanotube films;

[0226] (4) The spin coating speed of the second electrolyte layer 6 of the dual gate structure unit A is set to 2000 RPM, and the spin coating speed of the second electrolyte layer 6 of the dual gate structure unit B is set to 1000 RPM.

[0227] (5) The upper gate 7 of each of the dual gate structure units A and B is formed by carbon nanotube thin films.

[0228] The electrochemical device of this embodiment includes N=2 different dual-gate structural units. The thicknesses of the first electrolyte layer 2 and the second electrolyte layer 6 in dual-gate structural unit A and the first electrolyte layer 2 and the second electrolyte layer 6 in dual-gate structural unit B are different. However, the first electrolyte layer 2 and the second electrolyte layer 6 in each structural unit are made of the same material, and the thickness of the second electrolyte layer 6 in each structural unit is greater than the thickness of the first electrolyte layer 2. The test results of the electrochemical device of this embodiment are similar to those of Embodiment 3.

[0229] Example 12: Electrochemical device comprising three dual-gate structural units

[0230] In this Example 12, the preparation process of the electrochemical device is similar to that in Example 5, except that:

[0231] (1) The lower gate 1 is divided into three regions using polyethylene terephthalate thin film insulating material to prepare dual gate structure units A, B, and C.

[0232] (2) The source electrode 3 and drain electrode 4 of each of the dual gate structure units A, B and C are made of metallic carbon nanotube thin film.

[0233] (3) The upper gate 7 of each of the dual gate structure units A, B and C is formed by carbon nanotube thin film.

[0234] The source-drain current was measured using a Keithley 4200 semiconductor parameter analyzer, and a pulse signal generated by a signal generator was used to simulate the triggering process of biological signals. During the experiment, the source-drain current was measured using a constant voltage method, with a measurement voltage of 0.1V set. The test used a pulse voltage V. G =2V <V CThe pulse duration is 10ms, and the pulse voltage is V. G =5V>V C The pulse duration is 10ms, V G =3V=V C The pulse duration is 10ms. Three pulse voltages simultaneously trigger the upper gate 7 of dual-gate structure unit A and the upper gate 7 of dual-gate structure unit B, respectively. Figure 9 and Figure 10 When denoted as A7 and B7 respectively, the channel 5 of the dual-gate structure units A, B and C is tested. Figure 9 and Figure 10 The values ​​in the table represent the current changes for A5, B5, and C5 respectively. The results are as follows: Figure 9 and Figure 10 As shown.

[0235] The electrochemical device in this embodiment includes N=3 identical dual-gate structural units. In each structural unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same material, and the thickness of the second electrolyte layer 6 in each structural unit is greater than the thickness of the first electrolyte layer 2. When K=2, and the pulse voltage simultaneously triggers A7 and B7, [the following occurs]. Figure 9 It can be seen that when V G =2V <V C At that time, the first regulatory effect was achieved, simulating the simultaneous inhibition process between biological synapses; when V G =5V>V C At that time, the third regulatory effect was achieved, simulating the simultaneous enhancement process between biological synapses. Figure 10 It can be seen that when V G =3V=V C At this time, the second regulation effect is achieved, and the channel current of the three dual-gate structure units A, B, and C is in a quiescent state. This electrochemical device, triggered by a single voltage of 2V or 5V, increases or decreases the current of channels A5, B5, and C5 without the assistance of other voltages. This electrochemical device, triggered by a unidirectional voltage of 2V or 5V, outputs the current of channels A5, B5, and C5, i.e., multiple signal inputs and multiple signal outputs. Furthermore, no other electronic components such as resistors, capacitors, inductors, or diodes are introduced in this process.

[0236] Example 13: Electrochemical device comprising three dual-gate structural units

[0237] In this embodiment, the fabrication process of the electrochemical device includes:

[0238] 1. Preparation stage: Prepare carbon nanotube films and carbon nanotube / polyaniline composite films. Mix polyethylene oxide (PEO) and phosphoric acid at a mass ratio of 10:1 to prepare gel electrolyte.

[0239] 2. The pre-prepared carbon nanotube / polyaniline composite film is laid flat on an insulating and flexible polyimide film substrate to form a gate electrode 9, which serves as the common lower gate 1 for each dual gate structure unit.

[0240] 3. Using polyethylene terephthalate thin film insulating material, the lower gate 1 is divided into three regions to prepare dual gate structure units A, B, and C.

[0241] 4. Spin-coat the lower gate 1 with gel electrolyte at a spin speed of 2000 RPM and cure it under the irradiation of a baking lamp to obtain the first electrolyte layer 2 of each of the dual gate structure units A, B and C.

[0242] 5. Source electrode 3 and drain electrode 4 are prepared at the positions corresponding to the electrodes on each first electrolyte layer 2. The source electrode 3 and drain electrode 4 are made of carbon nanotube thin film.

[0243] 6. A mask is prepared above each source electrode 3 and drain electrode 4. The mask is hollow to ensure that the carbon nanotube film only covers the channel position and attaches the carbon nanotube film to form the channels 5 of the dual gate structure units A, B and C respectively.

[0244] 7. Spin-coat the gel electrolyte again on each channel 5, with the spin-coating speed set at 5000 RPM, and cure it under a heat lamp. After complete curing, remove the mask to form the second electrolyte layer 6 of each of the dual-gate structure units A, B, and C.

[0245] 8. Transfer the carbon nanotube film to the position above the corresponding channel of each second electrolyte layer 6, as the upper gate 7 of each of the dual gate structure units A, B, and C.

[0246] 9. Remove the polyethylene terephthalate (PET) film insulating material used in step 3 to separate the different regions. The integrated fabrication of the electrochemical device is now complete.

[0247] The electrochemical device in this embodiment includes N=3 identical dual-gate structural units. In each structural unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same material, and the thickness of the second electrolyte layer 6 in the structural unit is less than the thickness of the first electrolyte layer 2. When K=2, and the pulse voltage simultaneously triggers A7 and B7, when the pulse trigger voltage V... G Less than the critical pulse trigger voltage V C At that time, the currents A5, B5, and C5 decrease simultaneously, achieving the first regulatory effect and simulating the simultaneous inhibition process between biological synapses; when the pulse trigger voltage V... G Greater than the critical pulse trigger voltage V C At this time, the currents A5 and B5 increase, while the current C5 decreases, achieving the fifth regulatory effect and simulating the negative induction process between biological synapses.

[0248] Example 14: Electrochemical device comprising 9 micro dual-gate structural units

[0249] In this embodiment, the preparation process of the electrochemical device is similar to that in Example 12, except that:

[0250] (1) The lower gate 1 is divided into 3×3 regions using polyethylene terephthalate thin film insulating material to prepare dual gate structure units A, B, ..., I, with the size of each region being 10μm×10μm.

[0251] (2) The channel size of each dual-gate structure unit is 5μm×5μm.

[0252] (3) The spin coating speed of the second electrolyte layer 6 of each dual-gate structure unit is set at 6000 RPM.

[0253] The electrochemical device in this embodiment is a microscale device, comprising N=9 identical dual-gate structural units. In each structural unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same material, and the thickness of the second electrolyte layer 6 in each structural unit is less than the thickness of the first electrolyte layer 2. When K=3, and the pulse voltage triggers A7, B7, and C7, when the pulse trigger voltage V... G Less than the critical pulse trigger voltage V C When the current in channels A5, B5, and C5 decreases, the current in channels D5, ..., I5 decreases, achieving the first regulatory effect and simulating the simultaneous inhibition process between biological synapses; when the pulse trigger voltage V... G Greater than the critical pulse trigger voltage V C At this time, the currents A5, B5, and C5 increase, while the currents D5, ..., I5 decrease, achieving the fifth regulatory effect and simulating the negative induction process between biological synapses.

[0254] Example 15: Electrochemical device comprising 9 micro dual-gate structure units

[0255] In this embodiment, the preparation process of the electrochemical device is similar to that in Example 13, except that:

[0256] (1) The lower gate 1 is divided into 3×3 regions using polyethylene terephthalate thin film insulating material to prepare dual gate structure units A, B, ..., I, with the size of each region being 10μm×10μm.

[0257] (2) The spin coating speed of the first electrolyte layer 2 of each dual-gate structure unit is set at 5000 RPM.

[0258] (3) The source electrode 3 and drain electrode 4 of each dual-gate structure unit are made of metallic carbon nanotube thin film.

[0259] (4) The channel size of each dual-gate structure unit is 5μm×5μm.

[0260] (5) The spin coating speed of the second electrolyte layer 6 of each dual-gate structure unit is set at 2000 RPM.

[0261] The electrochemical device in this embodiment is a microscale device, comprising N=9 identical dual-gate structural units. In each structural unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same material, and the thickness of the second electrolyte layer 6 in each structural unit is greater than the thickness of the first electrolyte layer 2. When K=3, and the pulse voltage triggers A7, B7, and C7, when the pulse trigger voltage V... G Less than the critical pulse trigger voltage V C When the current in channels A5, B5, and C5 decreases, the current in channels D5, ..., I5 decreases, achieving the first regulatory effect and simulating the simultaneous inhibition process between biological synapses; when the pulse trigger voltage V... G Greater than the critical pulse trigger voltage V C At this time, the currents A5, B5, and C5 decrease, while the currents D5, ..., I5 increase, achieving the fourth regulatory effect and simulating the positive induction process between biological synapses.

[0262] Example 16: Electrochemical device comprising two dual-gate structural units of different sizes

[0263] In this embodiment, the preparation process of the electrochemical device is similar to that in Example 8, except that:

[0264] (1) In the preparation stage, carbon nanotube films are prepared as channel materials, carbon nanotube / polyaniline composite films are prepared as gate materials, and polyvinyl alcohol (PVA) and phosphoric acid are mixed to prepare two acidic gel electrolytes with pH=1 and pH=3 respectively for later use.

[0265] (2) The first electrolyte layer 2 of the dual gate structure units A and B adopts an acidic gel electrolyte with pH=1.

[0266] (3) The mask used to prepare the channel 5 of the dual gate structure unit A has a size of 1μm×2μm, and the mask used to prepare the channel 5 of the dual gate structure unit B has a size of 2μm×4μm.

[0267] (4) The second electrolyte layer 6 of the dual gate structure units A and B adopts an acidic gel electrolyte with pH=3.

[0268] The electrochemical device prepared in this embodiment is a micro-nano scale device, comprising N=2 dual-gate structural units. The channel 5 area of ​​dual-gate structural unit B is larger than that of dual-gate structural unit A. The first electrolyte layer 2 and the second electrolyte layer 6 in the structural unit are electrolytes of the same material but with different pH values, and the thickness of the second electrolyte layer 6 in the structural unit is greater than the thickness of the first electrolyte layer 2. The test results of this electrochemical device are similar to those of Example 3, achieving both the first and fourth regulatory effects.

[0269] Example 17: Electrochemical device comprising two dual-gate structural units of different sizes

[0270] In this embodiment, the preparation process of the electrochemical device is similar to that in Example 16, except that:

[0271] (1) When preparing the first electrolyte layer 2 of the dual gate structure units A and B, an acidic gel electrolyte with pH=3 was used and the spin coating speed was 2000RPM.

[0272] (2) When preparing the second electrolyte layer 6 of the dual gate structure units A and B, an acidic gel electrolyte with pH=1 was used and the spin coating speed was 6000RPM.

[0273] The electrochemical device prepared in this embodiment is a micro-nano scale device, comprising N=2 dual-gate structural units. The channel 5 area of ​​dual-gate structural unit B is larger than that of dual-gate structural unit A. The first electrolyte layer 2 and the second electrolyte layer 6 in the structural unit are electrolytes of the same material but with different pH values, and the thickness of the second electrolyte layer 6 in the structural unit is less than the thickness of the first electrolyte layer 2. The test results of this electrochemical device are similar to those of Example 5, achieving both the first and fifth regulatory effects.

[0274] Example 18: Electrochemical device comprising two dual-gate structural units of different sizes

[0275] In this embodiment, the preparation process of the electrochemical device is similar to that of Example 16, except that an acidic gel electrolyte with pH=1 is prepared by mixing polyvinyl alcohol (PVA) and phosphoric acid, and an acidic gel electrolyte with pH=3 is prepared by mixing polyethylene oxide (PEO) and phosphoric acid. The test results of the electrochemical device in this embodiment are similar to those in Example 16.

[0276] Example 19: Electrochemical device comprising two dual-gate structural units of different sizes

[0277] In this embodiment, the preparation process of the electrochemical device is similar to that of Example 17, except that an acidic gel electrolyte with pH=1 is prepared by mixing polyvinyl alcohol (PVA) and phosphoric acid, and an acidic gel electrolyte with pH=3 is prepared by mixing polyethylene oxide (PEO) and phosphoric acid. The test results of the electrochemical device in this embodiment are similar to those in Example 17.

[0278] Example 20: An electrochemical device comprising 9 miniature dual-gate structure units

[0279] In this embodiment, the fabrication process of the electrochemical device includes:

[0280] 1. Preparation stage: Prepare carbon nanotube films as channel materials; prepare carbon nanotube / polyaniline composite films as gate materials; prepare a gel electrolyte with pH=1 by mixing polyvinyl alcohol (PVA) and phosphoric acid, and prepare a gel electrolyte with pH=3 by mixing polyethylene oxide (PEO) and phosphoric acid for later use.

[0281] 2. Nine pre-prepared carbon nanotube / polyaniline composite films are laid flat on an insulating glass substrate to form nine dual-gate structural units (let's call them dual-gate structural units A, B, ..., I) with their respective lower gate 1.

[0282] 3. A gel electrolyte with pH=1 is spin-coated sequentially onto each lower gate 1. The spin-coating speed is set to 1000 RPM, 1100 RPM, ..., 1800 RPM. The electrolyte is cured under the illumination of a baking lamp to form the first electrolyte layer 2 of each of the nine dual-gate structural units.

[0283] 4. Nine dual-gate structure units are prepared above each first electrolyte layer 2 at positions corresponding to the lower gate 1, with their respective source electrodes 3 and drain electrodes 4 made of metallic carbon nanotube thin films.

[0284] 5. A mask is prepared above each source electrode 3 and drain electrode 4, and a carbon nanotube film is attached to form the channel 5 of each of the nine dual gate structure units. The channel size is 5μm×5μm.

[0285] 6. Spin-coat a gel electrolyte with pH=3 onto each channel 5 sequentially. The spin-coating speed is set to 6000 RPM, 6100 RPM, ..., 6800 RPM. Then cure under a heat lamp. After complete curing, remove the mask to form the second electrolyte layer 6 for each of the 9 dual-gate structure units.

[0286] 7. The carbon nanotube film is transferred above each of the second electrolyte layers 6 to serve as the upper gate 7 of each of the nine dual-gate structure units.

[0287] 8. Connect the lower gate 1 of the nine prepared dual-gate structure units with wires to complete the preparation of the electrochemical device.

[0288] The electrochemical device in this embodiment includes N=9 structurally similar dual-gate structure units. In each unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same properties (both acidic) but different types of materials. The thickness of the second electrolyte layer 6 in each unit is less than the thickness of the first electrolyte layer 2. When K=3, and the pulse voltage triggers A7, B7, and C7, when the pulse trigger voltage V... G Less than the critical pulse trigger voltage V C When the current in channels A5, B5, and C5 decreases, the current in channels D5, ..., I5 decreases, achieving the first regulatory effect and simulating the simultaneous inhibition process between biological synapses; when the pulse trigger voltage V... G Greater than the critical pulse trigger voltage V C At this time, the currents A5, B5, and C5 increase, while the currents D5, ..., I5 decrease, achieving the fifth regulatory effect and simulating the negative induction process between biological synapses.

[0289] Example 21: Electrochemical device comprising 9 micro dual-gate structure units

[0290] In this embodiment, the preparation process of the electrochemical device is similar to that in Example 20, except that the spin coating speeds for preparing the first electrolyte layer 2 of each of the nine dual-gate structure units are sequentially set to 6000 RPM, 6100 RPM, ..., 6800 RPM; and the spin coating speeds for preparing the second electrolyte layer 6 of each of the nine dual-gate structure units are sequentially set to 1000 RPM, 1100 RPM, ..., 1800 RPM.

[0291] The electrochemical device in this embodiment includes N=9 structurally similar dual-gate structure units. In each unit, the first electrolyte layer 2 and the second electrolyte layer 6 are made of the same properties (both acidic) but different types of materials. The thickness of the second electrolyte layer 6 in each unit is greater than the thickness of the first electrolyte layer 2. When K=3, and the pulse voltage triggers A7, B7, and C7, when the pulse trigger voltage V... G Less than the critical pulse trigger voltage V C When the current in channels A5, B5, and C5 decreases, the current in channels D5, ..., I5 decreases, achieving the first regulatory effect and simulating the simultaneous inhibition process between biological synapses; when the pulse trigger voltage V... G Greater than the critical pulse trigger voltage V C At this time, the currents A5, B5, and C5 decrease, while the currents D5, ..., I5 increase, achieving the fourth regulatory effect and simulating the positive induction process between biological synapses.

[0292] The electrochemical device of the present invention has the following advantages and beneficial effects:

[0293] (1) The electrochemical device of the present invention consists of N dual-gate structural units. The N structural units can be identical or different. The structural units can be changed by adjusting conditions such as the thickness of the electrolyte layer and the size of the channel. The electrochemical device can exhibit mutual induction of neural activity.

[0294] (2) The structure of the electrochemical device of the present invention is different from that of the traditional three-terminal transistor device. In this electrochemical device, the gates of the N dual-gate structural units are connected by wires or share the same gate, which effectively eliminates the complex circuit connection in the integrated circuit, simplifies the connection between the structural units of the electrochemical device, and helps to reduce energy consumption.

[0295] (3) The electrochemical device of the present invention can increase or decrease the channel current without the need for other voltage regulation when triggered by unidirectional voltage of different magnitudes.

[0296] (4) Compared with conventional multichannel devices that use multiple gate electrodes on an electrolyte layer to control the same channel, the electrochemical device of the present invention uses a common gate structure to connect the various structural units, and the channels of each structural unit are independent of each other.

[0297] (5) Compared with the conventional integrated circuit, where electronic components are not interconnected and the regulation of each component is independent, the integrated electrochemical device of the present invention uses a common gate to connect the various structural units, and the regulation of each structural unit affects and restricts each other.

[0298] (6) Compared with traditional logic circuits that realize a single signal input, a single signal output, or multiple signal inputs and a single signal output, the electrochemical device of the present invention can not only realize a single signal input, a single signal output, multiple signal inputs and a single signal output; but also realize a single signal input, multiple signal outputs, and multiple signal inputs and multiple signal outputs.

[0299] (7) The electrochemical device of the present invention is self-supporting and flexible.

[0300] (8) The electrochemical device of the present invention can be either macroscopic or microscopic.

[0301] (9) The preparation method of the electrochemical device of the present invention is simple. During regulation, only the voltage of the input port needs to be adjusted to obtain the desired regulation effect, which is convenient to operate.

[0302] (10) The electrochemical device of the present invention is inexpensive and can be mass-produced.

[0303] (11) The electrochemical device of the present invention can be made of non-toxic and harmless raw materials, making it an environmentally friendly device.

[0304] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0305] Therefore, those skilled in the art should recognize that although numerous exemplary embodiments of the present invention have been shown and described in detail herein, many other variations or modifications conforming to the principles of the present invention can be directly determined or derived from the disclosure of the present invention without departing from the spirit and scope of the invention. Thus, the scope of the present invention should be understood and construed as covering all such other variations or modifications.

Claims

1. An electrochemical device for simulating biological signals, characterized in that, include: N dual-gate structural units, each of the dual-gate units comprising: Lower gate; A first electrolyte layer is disposed on the lower gate; A source electrode and a drain electrode, separated from each other, are disposed on the first electrolyte layer; A channel disposed on the first electrolyte layer and located between the source electrode and the drain electrode; A second electrolyte layer disposed above the channel; and An upper gate disposed on the second electrolyte layer; Where N is an integer greater than or equal to 2, and one of the lower gate and the upper gate of each of the dual-gate structure units forms a common gate with one of the lower gate and the upper gate of each of the other dual-gate structure units; and The electrochemical device is configured to adjust the relative thicknesses of the electrolyte layers of the K dual-gate structural units that are not in contact with the common gate to the thicknesses of the electrolyte layers of the remaining NK dual-gate structural units that are in contact with the common gate, under different pulse trigger voltages V. G When any gate of any of the K dual-gate structural units is triggered, different modulation effects are achieved on the channel current or channel resistance of each dual-gate structural unit to simulate the mutual induction of biological interactions, where 1≤K <N。 2. The electrochemical device according to claim 1, characterized in that, The regulatory effect includes at least one of the following: First regulation effect: When the pulse trigger voltage V G Less than the critical pulse trigger voltage V of the triggered gate C When the channel current change ΔI of K dual-gate structure units is less than 0, the channel current change ΔI of the remaining NK dual-gate structure units is less than 0, so as to simulate the inhibitory effect of neural activity. Second regulation effect: When the pulse trigger voltage V G =V C When the channel current of the K dual-gate structure units changes by ΔI=0, the channel current of the remaining NK dual-gate structure units also changes by ΔI=0, to simulate the resting effect of neural activity. Third regulation effect: When the pulse trigger voltage V G >V C When the channel current change ΔI of K dual-gate structure units is greater than 0, the channel current change ΔI of the remaining NK dual-gate structure units is also greater than 0, so as to enhance the effect while simulating neural activity. Fourth regulation effect: When the pulse trigger voltage V G >V C When the channel current change ΔI of K dual-gate structure units is <0, the channel current change ΔI of the remaining NK dual-gate structure units is >0, to simulate the positive induction effect of neural activity. Fifth regulation effect: When the pulse trigger voltage V G >V C When the channel current change ΔI of the K dual-gate structure units is greater than 0, the channel current change ΔI of the remaining NK dual-gate structure units is less than 0, in order to simulate the negative induction effect of neural activity.

3. The electrochemical device according to claim 2, characterized in that, The lower gate of all the dual-gate structure units forms the common gate; The electrochemical device is configured as follows: When the thickness of the second electrolyte layer in K of the dual-gate structural units is greater than the thickness of the first electrolyte layer in the remaining NK dual-gate structural units, under different pulse trigger voltages V G When any gate of any of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, the third regulation effect, and the fourth regulation effect are achieved. When the thickness of the second electrolyte layer in K of the dual-gate structural units is less than the thickness of the first electrolyte layer in the remaining NK dual-gate structural units, under different pulse trigger voltages V G When any gate of any of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, the third regulation effect, and the fifth regulation effect are achieved. When the thickness of the second electrolyte layer in the K dual-gate structural units is equal to the thickness of the first electrolyte layer in the remaining NK dual-gate structural units, under different pulse trigger voltages V G When any gate of any of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, and the third regulation effect are achieved.

4. The electrochemical device according to claim 2, characterized in that, The upper gate of all the dual-gate structure units forms the common gate; The electrochemical device is configured as follows: When the thickness of the first electrolyte layer in K dual-gate structural units is greater than the thickness of the second electrolyte layer in the remaining NK dual-gate structural units, under different pulse trigger voltages V G When any gate of any of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, the third regulation effect, and the fourth regulation effect are achieved. When the thickness of the first electrolyte layer in the K dual-gate structural units is less than the thickness of the second electrolyte layer in the remaining NK dual-gate structural units, under different pulse trigger voltages V G When any gate of any of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, the third regulation effect, and the fifth regulation effect are achieved. When the thickness of the first electrolyte layer in the K dual-gate structural units is equal to the thickness of the second electrolyte layer in the remaining NK dual-gate structural units, under different pulse trigger voltages V G When any gate of any of the K dual-gate structure units is triggered, the first regulation effect, the second regulation effect, and the third regulation effect are achieved.

5. The electrochemical device according to claim 1, characterized in that, The first electrolyte layer and the second electrolyte layer are made of materials that facilitate the migration and movement of ions.

6. The electrochemical device according to claim 5, characterized in that, The first electrolyte layer and the second electrolyte layer are gel electrolytes.

7. The electrochemical device according to claim 1, characterized in that, The materials of the first electrolyte layer and the second electrolyte layer in each of the dual-gate structure units are different or the same; and The materials of the first electrolyte layer and the second electrolyte layer in each of the dual-gate structure units have the same acidity or alkalinity.

8. The electrochemical device according to claim 1, characterized in that, The thickness h of each layer in the first electrolyte layer and the second electrolyte layer is within any of the following ranges: 0.1 nm≤h<100 nm, 100 nm≤h<500 nm, 500 nm≤h<10 μm, 10 μm≤h<50 μm, 50 μm≤h<100 μm, 500 μm≤h<1 mm, h≥1 mm.

9. The electrochemical device according to claim 1, characterized in that, One of the lower gate and one of the upper gate of each of the dual-gate structure units is connected to one of the lower gate and one of the upper gate of each of the other dual-gate structure units via a wire to form a common gate; or The lower gate and one of the upper gates of each of the dual-gate structure units share the same gate electrode with the lower gate and one of the upper gates of other dual-gate structure units to form the common gate.

10. A method for preparing an electrochemical device according to any one of claims 1-8, characterized in that, include: Each of the dual-gate structure units is fabricated independently, wherein, in fabricating each of the dual-gate structure units, the lower gate, the first electrolyte layer, the source electrode and the drain electrode, the channel, the second electrolyte layer and the upper gate of the dual-gate structure unit are fabricated sequentially; The common gate is formed by connecting one of the lower gate and one of the upper gate of each of the dual-gate structure units with the lower gate and one of the upper gate of each of the other dual-gate structure units via wires.

11. A method for preparing an electrochemical device according to any one of claims 1-8, characterized in that, include: Fabrication of a common gate electrode; Using the common gate electrode as the common gate of the electrochemical device, the common gate electrode is divided into N regions using an insulating material; Other structural layers, excluding the common gate, are sequentially fabricated on each of the said regions for each of the dual-gate structural units. The other structural layers include the first electrolyte layer, the source electrode and the drain electrode, the channel, the second electrolyte layer, and another gate other than the common gate.

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