Preparation Method of Light-Emitting Device, Light-Emitting Device and Backlight Module

Abstract

The present invention relates to a light-emitting device, a preparation method thereof, and a backlight module. The method includes providing a plurality of spaced metal blocks on a first surface of a carrier board, arranging them in pairs of two as metal block pairs; disposing a lower reflective layer that fits along the periphery of the metal block pairs; disposing two electrodes of a plurality of light-emitting elements on the metal block pairs in a manner that the electrodes of the light-emitting elements are fixed to the metal blocks; disposing a wavelength conversion element on the first surface in a manner that covers the exposed surfaces of the plurality of light-emitting elements; disposing an upper reflective layer on the upper surface of the wavelength conversion element, which is opposite to the upper surfaces of the plurality of light-emitting elements and is in direct contact with the wavelength conversion element. For each light-emitting element, the thicknesses of the upper and lower reflective layers gradually decrease from the center of the light-emitting element to the periphery; removing the redundant structure between adjacent light-emitting elements to obtain a single package. In this way, a side-emitting and brightening light-emitting device can be manufactured. At the same time, the process of the present invention is simple, enabling mass production of the light-emitting device and reducing costs, and is suitable for industrialization.

Description

Technical Field

[0001] The present invention relates to the technical field of light-emitting device preparation, and particularly to a method for preparing a light-emitting device, a light-emitting device and a backlight module. Background Art

[0002] Light-emitting diodes (LEDs) have the advantages of small size, simple structure, low energy consumption, long service life, etc. In recent years, they have gradually replaced traditional light-emitting devices, and small-sized LEDs have been widely used in display devices.

[0003] Small-sized LEDs can be used for backlight display or direct display. There are still many technical difficulties to be overcome for direct display. At present, LEDs are mainly used for backlight display in display devices. The current LED backlight module mainly integrates multiple light-emitting diode packages (LED PKGs) on a circuit board. Conventional LED packages have a relatively high central brightness and a limited light-emitting angle, requiring dense arrangement of LED packages and a relatively large mixing light distance OD (Optical Distance), and at the same time, a relatively thick diffusion plate is used, resulting in a relatively thick overall thickness of the backlight module and high cost, which does not conform to the development trend of current cost-reducing ultra-thin display devices. At present, the existing light-emitting device structures and their manufacturing processes are still difficult to achieve mass production of ultra-thin display devices.

[0004] In view of this, the present application provides a method for preparing a light-emitting device, a light-emitting device and a backlight module to solve the defects existing in the prior art. Summary of the Invention

[0005] Based on this, the present invention provides a method for preparing a light-emitting device, a light-emitting device and a backlight module. Through this method, a light-emitting device and a backlight module with a large light-emitting angle, light weight, cost reduction and suitable for industrialization can be obtained on the basis of the existing process.

[0006] The present invention provides a method for a light-emitting device, including:

[0007] Providing a carrier plate, and arranging a plurality of spaced metal blocks on a first surface of the carrier plate, with two of the metal blocks arranged in a pair of metal blocks;

[0008] Circumferentially arranging a lower reflective layer that fits the pair of metal blocks along the periphery of the pair of metal blocks, and the thickness of the lower reflective layer gradually decreases from the middle to the periphery;

[0009] Configuring two electrodes of a plurality of the light-emitting elements on the pair of metal blocks in such a way that the electrodes of the light-emitting elements are fixed to the metal blocks;

[0010] Configuring a wavelength conversion element on the first surface of the carrier plate to cover the exposed surfaces of the plurality of light-emitting elements;

[0011] An upper reflective layer that is disposed on the upper surface of the wavelength conversion element, faces the upper surfaces of the plurality of light-emitting elements, and is in direct contact with the wavelength conversion element is provided. For each of the light-emitting elements, the thickness of the upper reflective layer gradually decreases from the center of the light-emitting element towards the periphery;

[0012] The redundant structure between adjacent lower reflective layers is removed to form a single package.

[0013] Preferably, the lower reflective layer that fits around the periphery of the pair of metal blocks is disposed, including:

[0014] A dry film is formed on the first surface of the carrier plate in a manner that fills the gap between the metal blocks. The dry film covers the side surfaces of the metal blocks and the upper surface of the dry film is flush with the upper surfaces of the metal blocks;

[0015] Part of the dry film that fits around the periphery of the pair of metal blocks is removed using yellow light, and the removed space is filled with a liquid reflective material;

[0016] The remaining dry film is removed using yellow light, and part of the reflective material is removed with a first tool to form the lower reflective layer.

[0017] Preferably, the plurality of spaced metal blocks are disposed on the first surface of the carrier plate, including:

[0018] A first metal layer is prepared on the first surface of the carrier plate,

[0019] A second metal layer with a thickness less than that of the first metal layer is prepared on the upper surface of the first metal layer,

[0020] A plurality of intervals are cut out from the stacked first metal layer and second metal layer to form a plurality of spaced metal blocks.

[0021] Preferably, the two electrodes of the plurality of light-emitting elements are disposed on the pair of metal blocks in a manner that the electrodes of the light-emitting elements are fixed to the metal blocks, including:

[0022] Flux is applied to the upper surface of each of the metal blocks, and the electrodes of the light-emitting element are fixedly connected to the metal blocks through the flux.

[0023] Preferably, the wavelength conversion element is disposed on the first surface of the carrier plate in a manner that covers the exposed surfaces of the plurality of light-emitting elements, including:

[0024] The carrier plate and all the components on the carrier plate are placed entirely in a mold,

[0025] The mold injects a liquid wavelength conversion material to form a wavelength conversion element that covers the exposed surfaces of the plurality of light-emitting elements and has depressions corresponding to the upper surfaces of the respective light-emitting elements.

[0026] Preferably, disposing the wavelength conversion element on the first surface of the carrier plate in a manner that covers the exposed surfaces of the plurality of light-emitting elements includes:

[0027] Applying the liquid wavelength conversion material to the first surface of the carrier plate so that the liquid wavelength conversion material completely covers the exposed surfaces of the plurality of light-emitting elements;

[0028] Removing the excess liquid wavelength conversion material facing the upper surfaces of the plurality of light-emitting elements with a second tool to form a wavelength conversion element having depressions corresponding to the upper surfaces of the respective light-emitting elements.

[0029] Preferably, disposing an upper reflective layer on the upper surface of the wavelength conversion element that is opposite to the upper surfaces of the plurality of light-emitting elements and in direct contact with the wavelength conversion element includes:

[0030] Applying a liquid reflective material to the upper surface of the wavelength conversion element and filling the depressions of the wavelength conversion element to form the upper reflective layer with a flat upper surface.

[0031] Preferably, the method further includes: wrapping a protective layer around the circumferential side surface of the single package, and both ends of the protective layer are flush with the upper surface and the lower surface of the single package respectively.

[0032] The present invention also provides a light-emitting device manufactured by the above method.

[0033] The present invention also provides a backlight module, including a substrate, a reflective bowl disposed on the substrate, and a plurality of light-emitting devices as described above, and the reflective bowl surrounds at least one light-emitting device.

[0034] The beneficial effects of the present invention are to provide a method for manufacturing a light-emitting device, a light-emitting device, and a backlight module. The method includes providing a carrier substrate, disposing a plurality of spaced metal blocks on a first surface of the carrier substrate, with two metal blocks as a group arranged in a pair of metal blocks; disposing a lower reflective layer conforming to the pair of metal blocks along the outer circumference of the pair of metal blocks, and the thickness of the lower reflective layer gradually decreases from the middle to the periphery; disposing the two electrodes of a plurality of light-emitting elements on the pair of metal blocks in such a way that the electrodes of the light-emitting elements are fixed to the metal blocks; disposing a wavelength conversion element on the first surface of the carrier substrate to cover the exposed surfaces of the plurality of light-emitting elements; disposing an upper reflective layer on the upper surface of the wavelength conversion element that is opposite to the upper surfaces of the plurality of light-emitting elements and is in direct contact with the wavelength conversion element. For each light-emitting element, the thickness of the upper reflective layer gradually decreases from the center of the light-emitting element to the periphery; removing the redundant structure between adjacent light-emitting elements to obtain a single light-emitting device. In this way, a light-emitting device with lateral light emission and improved brightness can be manufactured. At the same time, the process in the method provided by the present invention is simple, which can enable the mass production of the light-emitting device and reduce the mass production cost, and is suitable for industrialization. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a schematic structural diagram of the light-emitting device according to an embodiment of the present invention;

[0036] Figure 2 is Figure 1 the first manufacturing process flowchart of the light-emitting device shown;

[0037] Figure 3 is Figure 1 the second manufacturing process flowchart of the light-emitting device shown;

[0038] Figure 4 is Figure 1 the third manufacturing process flowchart of the light-emitting device shown;

[0039] Figure 5 is Figure 3 the cross-sectional structural diagram corresponding to each step;

[0040] Figure 6 is Figure 2 the cross-sectional structural diagram corresponding to step S110 in;

[0041] Figure 7 is Figure 4 the cross-sectional structural diagram corresponding to each step;

[0042] Figure 8 is Figure 5 the mold structural diagram in;

[0043] The meanings of the reference numerals in the drawings are as follows:

[0044] 1 - Light-emitting device; 11 - Light-emitting element; 111 - Upper surface; 112 - Lower surface; 113 - Side surface; 12 - Upper reflective layer; 13 - Lower reflective layer; 14 - Wavelength conversion element; 15 - Electrical connection part; 151 - Electrode; 152 - Heightening layer; 153 - Connection layer; 16 - Protective layer; L - Central axis; 2 - Carrier plate; 3 - Metal block; 31 - First metal layer; 32 - Second metal layer; 4 - Mold; 41 - Profiled surface; 5 - Depression; 6 - First cutter; 7 - Second cutter; 8 - Liquid reflective material; 9 - Liquid wavelength conversion material; A - Encapsulation body; B - Dry film. Detailed implementation manner

[0045] For the convenience of understanding the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided so that the understanding of the disclosure of the present invention is more thorough and comprehensive.

[0046] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there can also be a central element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be a central element at the same time.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the description of the present invention in this specification are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0048] As Figure 1As shown in the figure, it is a schematic structural diagram of a kind of light-emitting device provided by the present invention. The light-emitting device 1 includes an upper reflective layer 12, a wavelength conversion element 14, a light-emitting element 11, and a lower reflective layer 13 that are sequentially arranged on the first surface of a carrier plate along the central axis L direction. The light-emitting element 11 has an upper surface 111 and a lower surface 112 opposite to each other and a side surface 113 connecting the upper surface 111 and the lower surface 112. The upper surface 111, the lower surface 112, and the side surface 113 form an exit surface of the light-emitting element 11. The light-emitting element 11 also extends two electrical connection parts 15 from its lower surface 112. The electrical connection part 15 includes a self-electrode 151 of the light-emitting element 11, a height increasing layer 152, and a connection layer connecting the electrode 151 and the height increasing layer 152. Here, the height increasing layer 152 and the connection layer 153 are correspondingly arranged on a metal block 3 on the first surface of the carrier plate. The metal block 3 includes a first metal layer 31 (i.e., the height increasing layer 152) arranged on the first surface of the carrier plate and a second metal layer 32 (i.e., the height increasing layer 153) connecting the first metal layer 31 and the electrode 151. The light-emitting element 11 is clamped between the upper reflective layer 12 and the lower reflective layer 13. The upper reflective layer 12 is arranged opposite to the upper surface 111, the lower reflective layer 13 is arranged opposite to the lower surface 112, and the wavelength conversion element 14 abuts against the light-emitting element 11. It covers all regions of the exit surface except the electrical connection part 15 and fills the gap between the upper reflective layer 12 and the lower reflective layer 13.

[0049] Embodiment 1

[0050] Based on the structure of the above light-emitting device 1, please refer to Figure 2 、 Figure 5 and Figure 6 , in the first embodiment, its manufacturing method includes the following steps:

[0051] Step S110: Provide a carrier plate 2, and configure a plurality of spaced metal blocks 3 on the first surface of the carrier plate 2. Two metal blocks 3 are in a group and arranged in the form of a pair of metal blocks 3;

[0052] For details, please refer to Figure 5-1 , the carrier plate 2 has a flat first surface. The interval s1 between adjacent pairs of metal blocks 3 is the same, and the interval s2 between the two metal blocks 3 in each pair of metal blocks 3 is the same. Preferably, s1 is greater than s2. The substrate is rectangularly arranged, and the metal blocks 3 are spaced and cover the rectangular substrate. In addition, the thicknesses of all the metal blocks 3 are set to be the same thickness.

[0053] Step S120: Configure a lower reflective layer 13 that fits around the periphery of the pair of metal blocks 3. The thickness of the lower reflective layer 13 gradually decreases from the middle to the periphery;

[0054] Specifically, for the structure of the lower reflective layer 13, please refer to Figure 1 and Figure 5-2, the lower reflective layer 13 can be formed by including a resin material and a light-reflecting substance, etc. The resin material is not particularly limited as long as it is selected such that it is unlikely to absorb the light from the light-emitting element 11. For example, the underfill material includes, but is not limited to, epoxy resin, silicone resin, modified silicone resin, polyurethane resin, oxetane resin, acrylic acid, polycarbonate, and polyimide.

[0055] Step S130, arrange the two electrodes 151 of a plurality of light-emitting elements 11 on the pair of metal blocks 3 in such a way that the electrode 151 of the light-emitting element 11 is fixed to the metal block 3;

[0056] For details, please refer to Figure 5-3 , the number of light-emitting elements 11 corresponds one-to-one with the number of groups of metal blocks 3, and the two electrodes 151 of the light-emitting element 11 respectively correspond to the two metal blocks 3 in the group of metal blocks 3, so that the two electrodes 151 of the light-emitting element 11 are respectively connected to the two metal blocks 3 in each group. The light-emitting element 11 is preferably a flip-chip LED chip here.

[0057] Step S140, arrange the wavelength conversion element 14 on the first surface of the carrier plate 2 in such a way as to cover the exposed surfaces of a plurality of light-emitting elements 11;

[0058] Specifically, the wavelength conversion element 14 includes, but is not limited to, a light-transmissive resin and a phosphor. As the light-transmissive resin, at least one material selected from silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, and fluororesin can be used. Other transparent resins or mixtures with the above materials can also be used, and the embodiment of the present invention does not limit the material of the light-transmissive resin. The phosphor can absorb the light of the light-emitting element 11 and emit white light. The wavelength conversion element 14 is coated on the first surface of the carrier plate 2 in a liquid form and covers all the exposed surfaces of the light-emitting elements 11, including the side surface 113, the upper surface 111, and the lower surface 112 of the light-emitting element 11 except at the electrode 151. Of course, the exposed surface of the electrode 151 is also covered. After the upper surface of the material is leveled, it can be cured.

[0059] Step S150, arrange the upper reflective layer 12 on the upper surface of the wavelength conversion element 14, which is opposite to the upper surface 111 of a plurality of light-emitting elements 11 and is in direct contact with the wavelength conversion element 14. For each light-emitting element 11, the thickness of the upper reflective layer 12 gradually decreases from the center of the light-emitting element 11 to the periphery;

[0060] Specifically, the upper reflective layer 12 is also formed of a resin material, a light reflective substance, etc. The specific material may be the same as or different from that of the upper reflective layer 12. When the upper reflective layer 12 is not divided into single light-emitting devices 1, it should have an uneven structure with alternating thick and thin intervals, and the thinnest part thereof should correspond to the interval between the lower reflective layers 13. And when corresponding to a single light-emitting element 11, its thickness also gradually thins from the center to the periphery. In addition, the wavelength conversion element 14 is filled between the upper reflective layer 12 and the lower reflective layer 13, and the wavelength conversion element 14 wraps the light-emitting element 11. Therefore, the light-emitting element 11 is also clamped between the upper reflective layer 12 and the lower reflective layer 13.

[0061] Step S160: Remove the redundant structure between adjacent lower reflective layers 13 to form a single package A.

[0062] For details, please refer to Figure 5-7 , the redundant structure is specifically the structure above the first surface of the vertical carrier 2 between the outer peripheries of the lower reflective layers 13, including a part of the wavelength conversion element 14 and the thinnest part of the upper reflective layer 12. In addition, the single package A here may be a single light-emitting device 1 described in this article, or may not be the light-emitting device 1 described in this article. In the obtained single light-emitting device 1, the upper reflective layer 12 and the lower reflective layer 13 are preferably an axisymmetric structure with a common axis of symmetry, and this axis of symmetry passes through the optical axis of the light-emitting element 11. The upper reflective layer 12 faces the upper surface 111 of the light-emitting element 11, and the lower reflective layer 13 faces the lower reflective layer 13 of the light-emitting element 11. The upper and lower reflective layers 13 change the light-emitting surface and the light-emitting path of the final light-emitting device 1, so that the light-emitting device 1 does not emit light from the upper surface, but emits light circumferentially along the side surface and diffuses the light outward circumferentially. The upper reflective layer 12, the lower reflective layer 13, and the wavelength conversion element 14 in the above steps all undergo a liquid curing process in the manufacturing process. In the above process, the curing degree is adjusted according to the respective corresponding number of curing times.

[0063] Based on the above embodiments, optionally, after step S160, there is also step 170 of wrapping a protective layer 16 around the circumferential side surface of the single package A, and both ends of the protective layer 16 are flush with the upper surface and the lower surface of the single package respectively.

[0064] Specifically, a liquid protective colloid is applied, and the protective colloid fills the gap between adjacent single packages A. The redundant protective colloid between the single packages A is removed, and only a thin layer of the protective layer 16 covering the side surfaces of each package A is left. The material of the protective layer 16 may be epoxy resin and its modified resin, which has good adhesiveness and gas barrier properties. Preferably, the material of the protective layer 16 may also be silicone resin and its modified resin, which has high heat resistance and high light resistance, and its volume shrinkage is very small after curing.

[0065] Based on the above embodiments, the specific steps of forming the metal block 3 in step S110 further include:

[0066] Step S111, preparing a first metal layer 31 on the first surface of the carrier plate 2,

[0067] Step S112, preparing a second metal layer 32 with a thickness less than that of the first metal layer 31 on the upper surface of the first metal layer 31,

[0068] Step S113, cutting a number of intervals in the stacked first metal layer 31 and second metal layer 32 to form a number of spaced metal blocks 3.

[0069] For details, please refer to Figure 5-1 , the metal block 3 in the embodiment of the present invention includes a first metal layer 31 connected to the carrier plate 2 and a second metal layer 32 disposed on the first metal layer 31 and connected to the electrode 151 of the subsequent light-emitting element 11. The first metal layer 31 is used to increase the thickness of the electrode 151 of the light-emitting element 11 itself, and the second metal layer 32 plays a connecting role. Preferably, please refer to Figure 5-3 , applying a soldering flux on the upper surface (second metal layer 32) of each metal block 3, and fixing the electrode 151 of the light-emitting element 11 to the metal block 3 through the soldering flux. The metal block 3 and the electrode 151 of the light-emitting element 11 itself together constitute the electrical connection part 15 of the light-emitting element 11. The thickness of the electrical connection part 15 is h1, and the thickness of the original electrode 151 of the light-emitting element 1111 is h2. Control the ratio of h1:h2 to be within the range of 9-12.

[0070] Based on the above embodiments, please refer to Figure 6 , optionally, the specific steps of forming the lower reflective layer 13 in step S120 further include:

[0071] Step S121, forming a dry film B on the first surface of the carrier plate 2 in a manner of filling the intervals between the metal blocks 3. The dry film B covers the side surfaces of the metal blocks 3 and the upper surface of the dry film B is flush with the upper surface of the metal blocks 3. Please refer to Figure 6-1 and Figure 6-2 ;

[0072] Step S122, using yellow light to remove a part of the dry film B around the periphery of the bonded metal block 3, and filling the removed space with the liquid reflective material 8. Please refer to Figure 6-3 and Figure 6-4 ;

[0073] Step S123, using yellow light to remove the remaining dry film B, and using the first tool 6 to remove a part of the reflective material to form the lower reflective layer 13. Please refer to Figure 6-5 and Figure 6-6 .

[0074] Specifically, the lower reflective layer 1313 extends around to form an opening 132 inside it. Two electrical connection parts 1515 are arranged in the opening 132 and are in contact with the lower reflective layer 1313. The shape of the cutting surface of the first tool 6 can be profiled according to the preset shape of the lower reflective layer 13. For details, please refer to the embodiments of the present invention Figure 6-6 A cross-sectional view of one of the first tools 6 shown. The remaining steps refer to the photoresist mask process

[0075] Embodiment 2

[0076] Based on the structure of the above light-emitting device 1, on the basis of Embodiment 1, please refer to Figure 3 、 Figure 5 and Figure 7 , the other steps of Embodiment 1 are the same, only steps S140 and S150 are different

[0077] Step S140 includes:

[0078] Step 210, disposing the wavelength conversion element 14 on the first surface of the carrier 2 in a manner that covers the exposed surfaces of multiple light-emitting elements 11, including:

[0079] Step 220, placing the carrier 2 and all the elements on the carrier 2 into the mold 4

[0080] Step 230, injecting a liquid wavelength conversion material 9 into the mold 4 to form a wavelength conversion element 14 that covers the exposed surfaces of multiple light-emitting elements 11 and has depressions 5 at the upper surfaces 111 corresponding to the respective light-emitting elements 11

[0081] Step S150 correspondingly includes:

[0082] Applying the liquid reflective material 8 to the upper surface of the wavelength conversion element 14 and filling the depressions 5 of the wavelength conversion element 14 to form an upper reflective layer 12 with a flush upper surface

[0083] In Embodiment 2, a wavelength conversion element 14 with a concave upper surface 5 is formed through the corresponding shape of the mold 4. The corresponding part of the mold 4 is concave downward to form a profiled surface 41. The profiled surface 41 is provided with a profile corresponding to all the depressions 5. After curing by compression molding, the shape of the wavelength conversion element 14 is formed at one time. Here, the outer periphery of the depression 5 should be directly opposite to the outer periphery of the lower reflective layer 13, and the depth of the depression 5 decreases from the inside to the outside. Subsequently, the liquid reflective material 8 fills and levels the depression 5, and keeping the upper surface of the liquid reflective material 8 flush can form the undivided upper reflective layer 12. Of course, except for the depression 5, there should also be a corresponding thin reflective material directly above the lower reflective layers 13, and corresponding to the thinnest part of the upper reflective layer 12. Finally, these will be removed

[0084] Embodiment 3

[0085] Based on the structure of the above light-emitting device 1, on the basis of the first embodiment, please refer to FIGS. 4 and Figure 8 , the other steps of the first embodiment are the same, only steps S140 and S150 are different.

[0086] Step S140 includes:

[0087] Step 310, applying the liquid wavelength conversion material 9 to the first surface of the carrier plate 2 so that the liquid wavelength conversion material 9 completely covers the exposed surfaces of the plurality of light-emitting elements 11;

[0088] Step 320, using the second tool 7 to remove the excess liquid wavelength conversion material 9 facing the upper surface 111 of the plurality of light-emitting elements 11, so as to form a wavelength conversion element 14 with a recess 5 at the upper surface 111 corresponding to each light-emitting element 11.

[0089] Step S150 correspondingly includes:

[0090] Applying the liquid reflective material 8 to the upper surface of the wavelength conversion element 14 and filling the recess 5 of the wavelength conversion element 14 to form an upper reflective layer 12 with a flat upper surface.

[0091] In this embodiment 3, the formation of the wavelength conversion element 14 is different from that in the second embodiment. In the third embodiment, the mold 4 is not used. Here, the liquid wavelength conversion material 9 is directly coated. After its upper surface is leveled, it is semi-cured and formed, and then the second tool 7 is used for cutting to form the recess 5. The cutting surface of the second tool 7 should be in imitation of the shape and structure of the recess 5. Then, follow the subsequent steps of the second embodiment to coat and fill the liquid reflective material 8, and that's it.

[0092] Through the method of the embodiment of the present invention, the structure of the light-emitting device 1 described in the embodiment of the present invention can be formed. Among them, the shapes of the upper reflective layer 12, the wavelength conversion element 14, and the lower reflective layer 13 can be prepared in imitation of the shapes of the mold 4 and each tool. In fact, it is not limited to the shapes shown in the examples. The method of the present invention has a simple process, can use existing equipment, and the processes in each step are means that can be realized and widely used in the art. All these make the mass production of the side-emitting and brightness-enhanced light-emitting device 1 possible. At the same time, this method has a low cost and is suitable for industrial production.

[0093] The present invention also provides a backlight module, including a substrate, a reflecting bowl disposed on the substrate, and a plurality of light-emitting devices 1 as described above. The reflecting bowl surrounds at least one light-emitting device 1. By providing the above light-emitting devices, the backlight module of the present invention has uniform light emission and a very small light mixing distance. At the same time, even when the distance between the light-emitting devices 1 is large, high brightness can still be maintained, greatly reducing the cost.

[0094] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0095] The above embodiments only express the preferred embodiments of the present invention, and the description is relatively specific and detailed. However, it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the present invention patent shall be subject to the appended claims.

Claims

1. A method for preparing a light-emitting device, characterized in that, Including: Providing a carrier substrate, arranging a plurality of spaced metal blocks on the first surface of the carrier substrate, and two of the metal blocks are arranged as a pair in the form of a metal block pair; After that, arranging a lower reflective layer that fits the metal block pair along the outer circumference of the metal block pair, and the thickness of the lower reflective layer gradually decreases from the middle to the periphery; After that, arranging the two electrodes of a plurality of the light-emitting elements on the metal block pair in such a way that the electrodes of the light-emitting elements are fixed to the metal blocks; After that, arranging a wavelength conversion element on the first surface of the carrier substrate in a way that covers the exposed surfaces of a plurality of the light-emitting elements, wherein, depressions are formed at the upper surface positions corresponding to each of the light-emitting elements on the wavelength conversion element; After that, arranging an upper reflective layer that is opposite to the upper surfaces of a plurality of the light-emitting elements and is in direct contact with the wavelength conversion element on the upper surface of the wavelength conversion element. For each of the light-emitting elements, the thickness of the upper reflective layer gradually decreases from the center of the light-emitting element to the periphery; After that, removing the redundant structure between adjacent lower reflective layers to form a single package.

2. The method for manufacturing a light-emitting device according to claim 1, wherein The arranging the lower reflective layer that fits the metal block pair along the outer circumference of the metal block pair includes: Forming a dry film on the first surface of the carrier substrate in a way that fills the space between the metal blocks, the dry film covering the side surfaces of the metal blocks and the upper surface of the dry film being flush with the upper surfaces of the metal blocks; Using yellow light to remove a part of the dry film that fits around the outer circumference of the metal block pair, and filling the removed space with a liquid reflective material; Removing the remaining dry film with yellow light, and removing a part of the reflective material with a first tool to form the lower reflective layer.

3. The method for manufacturing a light-emitting device according to claim 1, wherein The arranging a plurality of spaced metal blocks on the first surface of the carrier substrate includes: Preparing a first metal layer on the first surface of the carrier substrate, Preparing a second metal layer with a thickness less than that of the first metal layer on the upper surface of the first metal layer, Cutting a plurality of intervals in the stacked first metal layer and second metal layer to form a plurality of spaced metal blocks.

4. The method for manufacturing a light-emitting device according to claim 3, wherein The arranging the two electrodes of a plurality of the light-emitting elements on the metal block pair in such a way that the electrodes of the light-emitting elements are fixed to the metal blocks includes: Applying a soldering flux on the upper surface of each of the metal blocks, and fixing the electrodes of the light-emitting elements to the metal blocks through the soldering flux.

5. The method for manufacturing a light-emitting device according to claim 1, wherein The arranging the wavelength conversion element on the first surface of the carrier substrate in a way that covers the exposed surfaces of a plurality of the light-emitting elements includes: Placing the carrier substrate and all the components on the carrier substrate in a mold, Injecting a liquid wavelength conversion material into the mold to form a wavelength conversion element that covers the exposed surfaces of a plurality of the light-emitting elements and has depressions at the upper surface positions corresponding to each of the light-emitting elements.

6. The method for manufacturing a light-emitting device according to claim 1, wherein Configuring a wavelength conversion element on a first surface of the carrier plate to cover exposed surfaces of a plurality of the light-emitting elements includes: Applying a liquid wavelength conversion material to the first surface of the carrier plate so that the liquid wavelength conversion material completely covers the exposed surfaces of the plurality of the light-emitting elements; Removing excess liquid wavelength conversion material facing the upper surfaces of the plurality of the light-emitting elements with a second tool to form a wavelength conversion element having a depression at the upper surface corresponding to each of the light-emitting elements.

7. The method for manufacturing a light-emitting device according to claim 5 or 6, wherein Configuring an upper reflective layer on the upper surface of the wavelength conversion element, which is opposite to the upper surfaces of the plurality of the light-emitting elements and in direct contact with the wavelength conversion element, includes: Applying a liquid reflective material to the upper surface of the wavelength conversion element and filling the depression of the wavelength conversion element to form the upper reflective layer with a flat upper surface.

8. The manufacturing method of the light-emitting device according to claim 1, wherein, The method further includes: wrapping a protective layer around a circumferential side surface of the single package, and two ends of the protective layer are flush with the upper surface and the lower surface of the single package respectively.

9. A light-emitting device, characterized in that, Obtained by any one of the methods according to claims 1-8.

10. A backlight module, characterized in that, Including a substrate, a reflecting bowl provided on the substrate, and a plurality of light-emitting devices according to claim 9, wherein the reflecting bowl at least surrounds the periphery of one light-emitting device.

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