Heat dissipation assembly, production method of heat dissipation assembly, and electronic device

Abstract

The embodiment of the present application provides a heat dissipation assembly, a production method of the heat dissipation assembly and electronic equipment. The heat dissipation assembly comprises a heat plate and a graphite heat dissipation film. The graphite heat dissipation film comprises a heat-conducting insulating sheet and a graphite sheet. The graphite sheet is located between the heat-conducting insulating sheet and the heat plate, and opposite surfaces of the graphite sheet are connected with the heat-conducting insulating sheet and the heat plate respectively.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic equipment, in particular to a heat dissipation assembly, a production method of the heat dissipation assembly and an electronic equipment. BACKGROUND

[0002] At present, users have higher and higher requirements on the performance of electronic equipment, which causes the power consumption of the chip of the electronic equipment to rise. Due to the limited space of the electronic equipment, the chip located in the electronic equipment generates serious heat. In order to solve the problem of serious heat generation of the electronic equipment, a heat dissipation assembly is arranged in the electronic equipment.

[0003] In the related art, the heat dissipation assembly includes a vc heat plate and a graphite heat dissipation film. The vc heat plate is connected with the graphite heat dissipation film. After the chip generates heat, the heat is transmitted to the vc heat plate, and then transmitted to the graphite heat dissipation film. The single-sided adhesive and the double-sided adhesive added in the graphite heat dissipation film have very low thermal conductivity, which limits the further improvement of the heat conduction performance of the graphite heat dissipation film, resulting in poor heat dissipation performance of the electronic equipment. SUMMARY

[0004] The present application provides a heat dissipation assembly, a production method of the heat dissipation assembly and an electronic equipment to solve the problem of poor heat dissipation performance of the electronic equipment caused by the poor heat conduction performance of the heat dissipation assembly in the related art.

[0005] In order to solve the above technical problems, the present application is implemented as follows:

[0006] In a first aspect, the present application provides a heat dissipation assembly, which includes a heat plate and a graphite heat dissipation film. The graphite heat dissipation film includes a heat-conducting insulating sheet and a graphite sheet. The graphite sheet is located between the heat-conducting insulating sheet and the heat plate, and the opposite surfaces of the graphite sheet are connected with the heat-conducting insulating sheet and the heat plate respectively.

[0007] In a second aspect, the present application provides a production method of a heat dissipation assembly, which includes the following steps:

[0008] Adding granular boron nitride into a buffer solution to form a first mixed solution, wherein the pH value of the buffer solution is 8.5;

[0009] Adding dopamine hydrochloride into the first mixed solution to make the dopamine hydrochloride react with the boron nitride to form a granular reactant;

[0010] Extracting the reactant and grinding the reactant to obtain a ground reactant;

[0011] Adding the ground reactant into polydimethylphenylsiloxane containing a vinyl group and adding a vulcanizing agent to obtain a mixture;

[0012] The mixture is rolled to form a heat-conducting insulating sheet;

[0013] The heat-conducting insulating sheet is connected with a graphite sheet, and the graphite sheet is connected with a vapor chamber, to obtain a heat dissipation assembly.

[0014] In a third aspect, an electronic device is provided, which comprises a support and the heat dissipation assembly of the first aspect.

[0015] The side of the vapor chamber away from the graphite sheet is connected with the support.

[0016] In the embodiment, the heat dissipation assembly comprises a vapor chamber and a graphite heat dissipation film, and the vapor chamber is connected with the graphite heat dissipation film. The heat generated by the chip in the electronic device can be diffused through the vapor chamber and the graphite heat dissipation film, so that the temperature of the electronic device is reduced. The graphite heat dissipation film comprises a heat-conducting insulating sheet and a graphite sheet, the graphite sheet is located between the heat-conducting insulating sheet and the vapor chamber, and the opposite surfaces of the graphite sheet are connected with the heat-conducting insulating sheet and the vapor chamber, respectively. That is, the heat dissipation assembly comprises the heat-conducting insulating sheet, the graphite sheet and the vapor chamber connected in sequence. Since the heat-conducting insulating sheet is used on the side of the graphite heat dissipation film away from the vapor chamber, the heat-conducting performance of the side of the graphite heat dissipation film away from the vapor chamber is good. Therefore, when the heat dissipation assembly provided in the embodiment is applied to the electronic device, the heat generated by the chip in the electronic device can be transferred to the vapor chamber. The heat can be diffused on the vapor chamber after being transferred to the vapor chamber. The vapor chamber can transfer the heat to the graphite heat dissipation film, and the heat can be dissipated through the graphite heat dissipation film. The application of the heat-conducting insulating sheet makes the heat-conducting performance of the graphite heat dissipation film good, so that the graphite heat dissipation film can dissipate heat more quickly, thereby improving the heat dissipation performance of the heat dissipation assembly. That is, in the embodiment, the heat-conducting performance of the heat dissipation assembly can be improved by arranging the heat-conducting insulating sheet on the side of the graphite sheet away from the vapor chamber, so that the heat dissipation performance of the electronic device is good. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 FIG. 1 is a schematic view of a heat dissipation assembly provided in an embodiment of the present application;

[0018] Figure 2 FIG. 2 is a schematic view of another heat dissipation assembly provided in an embodiment of the present application;

[0019] Figure 3 FIG. 3 is a schematic view of a vapor chamber provided in an embodiment of the present application;

[0020] Figure 4 FIG. 4 is a schematic view of a support column and a connecting frame provided in an embodiment of the present application;

[0021] Figure 5Fig. 1 shows a schematic diagram of a processing method of a graphite heat dissipation film according to an embodiment of the present application;

[0022] Figure 6 Fig. 2 shows a flow chart of a processing method of a heat dissipation assembly according to an embodiment of the present application;

[0023] Figure 7 Fig. 3 shows a schematic diagram of a connection between a graphite sheet and a VC vapor chamber according to the prior art.

[0024] Reference signs:

[0025] 100: heat dissipation assembly; 10: graphite heat dissipation film; 20: vapor chamber; 11: heat-conducting insulation sheet; 12: graphite sheet; 21: upper cover plate; 22: heat dissipation structure; 23: lower cover plate; 221: capillary structure; 222: support column; 223: connecting frame; 224: first connecting rod; 225: second connecting rod; 30: single-sided adhesive; 40: double-sided adhesive. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0027] It should be understood that the term “one embodiment” or “an embodiment” mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, “in one embodiment” or “in an embodiment” appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner.

[0028] Before explaining the heat dissipation assembly provided by the embodiments of the present application, the application scenario of the heat dissipation assembly provided by the embodiments of the present application will be described in detail: in the related art, the two sides of the graphite sheet are respectively connected with the single-sided adhesive 30 and the double-sided adhesive 40, as shown in Fig. 3. Figure 7As shown, the graphite sheet 12 is sealed by single-sided tape 30 and double-sided tape 40 to form a graphite heat dissipation film. At the same time, the graphite heat dissipation film is connected to the VC heat spreader through the double-sided tape 40, so that the heat generated by the chip can be dissipated through the VC heat spreader and the graphite heat dissipation film. The graphite sheet 12 has a planar thermal conductivity of 1200 W / mk, and a thickness thermal conductivity of 10 W / mk. The thermal conductivity of the single-sided tape 30 and double-sided tape 40 is 0.16 W / mk, resulting in a thermal conductivity of approximately 0.41 W / mk in the thickness direction of the entire graphite heat dissipation film, and a planar thermal conductivity of 738.5 W / mk. This means that the graphite heat dissipation film's planar thermal conductivity is only 61.5% of that of the graphite sheet 12, and its thickness thermal conductivity is only 4.1% of that of the graphite sheet 12. This means that the single-sided tape 30 and double-sided tape 40 significantly increase the thermal resistance of the graphite heat dissipation film, resulting in a reduction in its heat dissipation performance. The lower cover 23 of the VC vapor chamber receives heat generated by the chip during operation and dissipates it through the heat dissipation structure 22. The upper cover 21 then transfers the heat to the graphite heat dissipation film for further dissipation. Because the upper cover plate 21 of the VC vapor chamber is connected to the double-sided tape 40 on the graphite heat dissipation film, that is, the VC vapor chamber and the graphite heat dissipation film are connected via the double-sided tape 40, and the thermal conductivity of the double-sided tape 40 is relatively low, the double-sided tape 40 also increases the thermal resistance between the VC vapor chamber and the graphite heat dissipation film, thereby reducing the heat dissipation performance of the VC vapor chamber and the graphite heat dissipation film. The heat dissipation assembly 100 provided in the embodiment of the present invention is used in this scenario.

[0029] like Figures 1 to 5 As shown, the heat dissipation assembly 100 includes a heat spreader 20 and a graphite heat dissipation film 10. The graphite heat dissipation film 10 includes a thermally conductive insulating sheet 11 and a graphite sheet 12. The graphite sheet 12 is located between the thermally conductive insulating sheet 11 and the heat spreader 20, and the two opposite sides of the graphite sheet 12 are respectively connected to the thermally conductive insulating sheet 11 and the heat spreader 20.

[0030] In the embodiment of the present application, the heat dissipation assembly 100 comprises the vapor chamber 20 and the graphite heat dissipation film 10, the vapor chamber 20 is connected with the graphite heat dissipation film 10, and the heat generated by the chip in the electronic device can be diffused through the vapor chamber 20 and the graphite heat dissipation film 10, so that the temperature of the electronic device is reduced. The graphite heat dissipation film 10 comprises the heat-conducting insulating sheet 11 and the graphite sheet 12, the graphite sheet 12 is located between the heat-conducting insulating sheet 11 and the vapor chamber 20, and the opposite surfaces of the graphite sheet 12 are connected with the heat-conducting insulating sheet 11 and the vapor chamber 20 respectively, that is, the heat dissipation assembly 100 comprises the heat-conducting insulating sheet 11, the graphite sheet 12 and the vapor chamber 20 connected in sequence. Since the heat-conducting insulating sheet 11 is adopted on the side of the graphite heat dissipation film 10 away from the vapor chamber 20, the heat conduction performance of the side of the graphite heat dissipation film 10 away from the vapor chamber 20 is good. Therefore, when the heat dissipation assembly 100 provided in the embodiment of the present application is applied to the electronic device, the heat generated by the chip of the electronic device can be transmitted to the vapor chamber 20, the heat can be diffused on the vapor chamber 20 after being transmitted to the vapor chamber 20, the vapor chamber 20 can transmit the heat to the graphite heat dissipation film 10, and the graphite heat dissipation film 10 can dissipate heat. The application of the heat-conducting insulating sheet 11 makes the heat conduction performance of the graphite heat dissipation film 10 good, and thus the graphite heat dissipation film 10 can dissipate heat more quickly, so that the heat dissipation performance of the heat dissipation assembly 100 can be improved. That is, in the embodiment of the present application, the heat conduction performance of the heat dissipation assembly 100 can be improved by arranging the heat-conducting insulating sheet 11 on the side of the graphite sheet 12 away from the vapor chamber 20, so that the heat dissipation performance of the electronic device is good.

[0031] In addition, in some embodiments, the heat conduction coefficient of the heat-conducting insulating sheet 11 can be greater than 0.16 W / mk.

[0032] In the embodiment of the present application, the heat conduction coefficient of the heat-conducting insulating sheet 11 in the graphite heat dissipation film 10 is greater than 0.16 W / mk, that is, the heat conduction coefficient of the heat-conducting insulating sheet 11 is greater than that of the single-sided adhesive tape, so that the heat conduction coefficient of the graphite heat dissipation film 10 is improved. Compared with the scheme of adopting the single-sided adhesive tape 30 on the side of the graphite sheet 12 away from the vapor chamber 20 in the related art, the heat dissipation assembly 100 provided in the embodiment of the present application can improve the heat dissipation performance of the graphite heat dissipation film 10, and thus the heat dissipation performance of the heat dissipation assembly 100 can be improved.

[0033] It should be noted that the heat-conducting insulating sheet 11 can be made of soft material, and the heat-conducting insulating sheet 11 made of soft material can be better attached to other components when connected.

[0034] In addition, in some embodiments, the vapor chamber 20 can include an upper cover plate 21, a lower cover plate 23, and a heat dissipation structure 22, the upper cover plate 21 and the lower cover plate 23 are connected to form a containing cavity, the heat dissipation structure 22 is located in the containing cavity, the graphite sheet 12 is connected with the upper cover plate 21, and the material of the upper cover plate 21 is the same as that of the heat-conducting and insulating sheet 11.

[0035] The vapor chamber 20 includes an upper cover plate 21, a lower cover plate 23, and a heat dissipation structure 22, the upper cover plate 21 and the lower cover plate 23 are connected to form a containing cavity, and the heat dissipation structure 22 is located in the containing cavity. Since the graphite sheet 12 is connected with the upper cover plate 21, in the case of heat generation of the chip, the heat can be transferred to the vapor chamber 20, dissipated through the heat dissipation structure 22 in the vapor chamber 20, and at the same time, the vapor chamber 20 can also transfer the heat to the graphite heat dissipation film 10 through the upper cover plate 21, so that the heat can be dissipated through the graphite heat dissipation film 10.

[0036] Since the material of the upper cover plate 21 is the same as that of the heat-conducting and insulating sheet 11, that is, the thermal conductivity of the connection between the graphite heat dissipation film 10 and the vapor chamber 20 is also good, the transfer efficiency of the heat transferred from the vapor chamber 20 to the graphite heat dissipation film 10 is also high, that is, in the embodiment of the present application, the thermal resistance of the vapor chamber 20 can be reduced by using the upper cover plate 21 of this material, the heat dissipation performance of the vapor chamber 20 is improved, and the heat dissipation performance of the heat dissipation assembly 100 can be further improved.

[0037] That is, in the embodiment of the present application, the material of the upper cover plate 21 is also the same as that of the heat-conducting and insulating sheet 11, that is, the two sides of the graphite sheet 12 are both heat-conducting and insulating materials, the thermal conductivity of the heat-conducting and insulating sheet 11 is greater than that of the single-sided adhesive, the material of the upper cover plate 21 is the same as that of the heat-conducting and insulating sheet 11, which can further reduce the thermal resistance of the graphite heat dissipation film 10, the thermal conductivity of the upper cover plate 21 is greater than that of the double-sided adhesive, which can improve the heat dissipation performance of the graphite heat dissipation film 10 and the vapor chamber 20, and the material of the upper cover plate 21 can also reduce the thermal resistance of the vapor chamber 20, thereby improving the heat dissipation performance of the heat dissipation assembly 100.

[0038] In addition, the material of the upper cover plate 21 is the same as that of the heat-conducting and insulating sheet 11, and the upper cover plate 21 is also relatively soft, so that the fitting degree between the upper cover plate 21 and the graphite layer 12 is good, and the fitting degree between the graphite heat dissipation film 10 and the vapor chamber 20 is good. That is, in the embodiment of the present application, the fitting degree between the vapor chamber 20 and the graphite heat dissipation film 10 can be improved by setting the material of the upper cover plate 21 to be the same as that of the heat-conducting and insulating sheet 11.

[0039] In addition, in some embodiments, the heat plate 20 comprises an upper cover plate 21, a lower cover plate 23, and a heat dissipation structure 22, the upper cover plate 21 and the lower cover plate 23 are connected to form a containing cavity, the heat dissipation structure 22 is located in the containing cavity, the graphite sheet 12 is connected with the upper cover plate 21, and the material of the upper cover plate 21 and the material of the lower cover plate 23 are the same as the material of the heat-conducting insulating sheet 11.

[0040] The heat plate 20 comprises an upper cover plate 21, a lower cover plate 23, and a heat dissipation structure 22, the upper cover plate 21 and the lower cover plate 23 are connected to form a containing cavity, the heat dissipation structure 22 is located in the containing cavity, in the case of heat generated by the chip, the heat will be transmitted to the heat plate 20, and the heat is dissipated through the heat dissipation structure 22 in the heat plate 20, and at the same time, the heat plate 20 can also transmit the heat to the graphite heat dissipation film 10 through the upper cover plate 21, so that the heat can be dissipated through the graphite heat dissipation film 10.

[0041] Since the material of the upper cover plate 21 and the material of the lower cover plate 23 are the same as the material of the heat-conducting insulating sheet 11, that is, the heat conductivity coefficient of the upper cover plate 21 and the lower cover plate 23 of the heat plate 20 is also good. Since the lower cover plate 23 is used to absorb the heat generated by the work of the chip, and the upper cover plate 21 is used to transmit the heat to the graphite heat dissipation film 10 for further heat dissipation, therefore, the lower cover plate 23 with the same material as the heat-conducting insulating sheet 11 has a high efficiency in absorbing heat, so that the heat generated by the work of the chip can be timely entered into the heat dissipation assembly 100 for heat dissipation; the upper cover plate 21 with the same material as the heat-conducting insulating sheet 11 can make the heat transfer efficiency between the heat plate 20 and the graphite heat dissipation film 10 be high, so that the heat can be timely entered into the graphite heat dissipation film 10 for dissipation. That is, in the embodiment of the present application, the efficiency of the heat generated by the work of the chip transmitted to the heat plate 20 is high, and the transmission efficiency of the heat transmitted from the heat plate 20 to the graphite heat dissipation film 10 is also high, so that the upper cover plate 21 and the lower cover plate 23 with the material can reduce the thermal resistance of the heat plate 20, and thus the heat dissipation performance of the heat dissipation assembly 100 can be improved.

[0042] In addition, in the embodiment of the present application, since the double-sided adhesive layer between the heat plate 20 and the graphite heat dissipation film 10 is cancelled, and the upper cover plate 21 is directly connected with the graphite sheet 12, therefore, the contact interface between the heat plate 20 and the graphite heat dissipation film 10 can also be cancelled, further reducing the thermal resistance of the heat dissipation assembly 100 in the direction from the heat plate 20 to the graphite heat dissipation film 10, and improving the heat dissipation performance of the heat dissipation assembly 100. Of course, the double-sided adhesive can also be arranged between the upper cover plate 21 and the graphite sheet 12 to connect the upper cover plate 21 and the graphite sheet 12.

[0043] In addition, in some embodiments, only the material of the lower cover plate 23 can be the same as the material of the heat-conducting insulating sheet 11.

[0044] The material of the lower cover plate 23 is the same as that of the heat-conducting insulation sheet 11, that is, the lower cover plate 23 is also made of heat-conducting insulation material, so that the heat resistance of the vapor chamber 20 can be reduced by using the lower cover plate 23 made of the material, the lower cover plate 23 made of the same material as the heat-conducting insulation sheet 11 has high heat absorption efficiency, so that the heat generated by the chip can be quickly introduced into the heat dissipation assembly 100 for heat dissipation, the heat dissipation performance of the vapor chamber 20 is improved, and the heat dissipation performance of the heat dissipation assembly 100 is improved.

[0045] In addition, the material of the lower cover plate 23 is the same as that of the heat-conducting insulation sheet 11, so that the lower cover plate 23 is relatively soft, and the adhesion between the lower cover plate 23 and other components in the electronic device is good, that is, the adhesion between the vapor chamber 20 and other components in the electronic device is good.

[0046] In addition, in some embodiments, the materials of the upper cover plate 21 and the lower cover plate 23 can also be metal materials, the opposite surfaces of the graphite sheet 12 are connected with the heat-conducting insulation sheet 11 and the upper cover plate 21 made of metal material respectively, the upper cover plate 21 is directly connected with the graphite sheet 12, the double-sided adhesive layer between the vapor chamber 20 and the graphite heat dissipation film 10 is cancelled, and the contact interface between the vapor chamber 20 and the graphite heat dissipation film 10 can also be cancelled, so that the heat resistance of the heat dissipation assembly 100 in the direction from the vapor chamber 20 to the graphite heat dissipation film 10 is reduced, and the heat dissipation performance of the heat dissipation assembly 100 is improved.

[0047] It should be noted that when the upper cover plate 21 and the lower cover plate 23 are made of metal materials, the material of the upper cover plate 21 can be copper material or stainless steel material with high heat conductivity, and of course the upper cover plate 21 can also be other metal materials with high heat conductivity, and the specific material of the upper cover plate 21 is not limited in the embodiments of the present application. The material of the lower cover plate 23 can also be copper material or stainless steel material with high heat conductivity, and of course the lower cover plate 23 can also be other metal materials with high heat conductivity, and the specific material of the lower cover plate 23 is not limited in the embodiments of the present application.

[0048] In addition, in some embodiments, as shown in Figure 3 , Figure 4 The heat dissipation structure 22 can include a capillary structure 221, a support column 222 and a connecting frame 223; the connecting frame 223 includes a plurality of first connecting rods 224 arranged at intervals along a first direction and a plurality of second connecting rods 225 arranged at intervals along a second direction, the first connecting rods 224 intersect with the second connecting rods 225 and form a plurality of intersection points, one end of the support column 222 is connected to the intersection point position, the other end of the support column 222 is located in the accommodating cavity, and the connecting frame 223 abuts against the upper cover plate 21; the capillary structure 221 is arranged on the surface of the lower cover plate 23 facing the upper cover plate 21.

[0049] The heat dissipation structure 22 comprises a capillary structure 221, a support column 222, and a connecting frame 223 abutting against the upper cover plate 21. The connecting frame 223 can support the upper cover plate, i.e., the connecting frame 223 can improve the strength of the upper cover plate 21 and avoid the upper cover plate 21 from being concave. The connecting frame 223 comprises a plurality of first connecting rods 224 and a plurality of second connecting rods 225, the first connecting rods 224 and the second connecting rods 225 intersect to form a plurality of intersection points, and the support column 222 is connected at the intersection points, so that the position of the support column 222 is stable.

[0050] The capillary structure 221 is arranged on the surface of the upper cover plate 21 facing the lower cover plate 23. Since the heat-conducting liquid is contained in the accommodating cavity, when the chip generates heat, the heat-conducting liquid in the accommodating cavity can absorb the heat of the chip and evaporate, i.e., the heat-conducting liquid vaporizes, and the vaporized heat-conducting liquid flows in the accommodating cavity to the side far away from the chip. Since the distance between the side far away from the chip and the chip is relatively far, the temperature of the inner wall of the accommodating cavity is relatively low, so the vaporized heat-conducting liquid can condense into liquid at the side far away from the chip, i.e., the heat-conducting liquid can liquefy at the side far away from the chip. The capillary structure 221 can suck the liquefied heat-conducting liquid back to the original position, i.e., the liquefied heat-conducting liquid returns to the original position through the capillary structure 221, vaporizes again to absorb heat, so as to realize heat dissipation.

[0051] The accommodating cavity can be a vacuum chamber, so that the liquefied heat-conducting liquid at the side far away from the chip can return to the original position through the capillary structure 221. The capillary structure 221 can be one or a combination of woven copper wire, copper mesh, copper powder, and groove structure. The specific form of the capillary structure 221 is not limited in the embodiments of the present application.

[0052] It should be noted that the first connecting rod 224 and the second connecting rod 225 are located in the same plane, and the connecting frame 223 formed by the intersection of the first connecting rod 224 and the second connecting rod 225 can be parallel to the surface of the upper cover plate 21 facing the lower cover plate 23, or can be parallel to the surface of the lower cover plate 23 facing the upper cover plate 21.

[0053] It should be further noted that when the upper cover plate 21 is made of metal material, the strength of the upper cover plate 21 is large enough to meet the use requirement. At this time, the heat dissipation structure 22 can only comprise the support column 222, i.e., the connecting frame 223 can not be arranged in the heat dissipation structure 22 when the upper cover plate 21 is made of metal material, and the support column 222 is directly connected to the surface of the upper cover plate 21 facing the lower cover plate 23.

[0054] In addition, when the material of the upper cover plate 21 is the same as that of the heat-conducting insulating sheet 11, the upper cover plate 21 is relatively soft, so that the strength of the upper cover plate 21 is insufficient, and the upper cover plate 21 is often deformed under external force, affecting the heat dissipation function of the vapor chamber 20. At this time, a connecting frame 223 needs to be arranged at the upper cover plate 21, so that the connecting frame 223 abuts against the upper cover plate, and the strength of the upper cover plate 21 is increased through the connecting frame 233 to prevent the upper cover plate 21 from being deformed under stress.

[0055] In addition, in the graphite heat dissipation film 10, the heat-conducting insulating sheet 11 and the upper cover plate 21 can also wrap the graphite sheet 12, and the graphite sheet 12 is encapsulated by the heat-conducting insulating sheet 11 and the upper cover plate 21. Specifically, the heat-conducting insulating sheet 11 and the upper cover plate 21 are connected to form a containing cavity, and the graphite sheet 12 is located in the containing cavity, and each surface of the graphite sheet 12 is connected to the heat-conducting insulating sheet 11 or the upper cover plate 21, so that the graphite sheet 12 can be prevented from falling off during use.

[0056] In the embodiment of the present application, the heat dissipation assembly 100 includes the vapor chamber 20 and the graphite heat dissipation film 10, and the vapor chamber 20 is connected to the graphite heat dissipation film 10. The heat generated by the chip in the electronic device can be diffused through the vapor chamber 20 and the graphite heat dissipation film 10, so that the temperature of the electronic device is reduced. The graphite heat dissipation film 10 includes the heat-conducting insulating sheet 11 and the graphite sheet 12, the graphite sheet 12 is located between the heat-conducting insulating sheet 11 and the vapor chamber 20, and the opposite surfaces of the graphite sheet 12 are connected to the heat-conducting insulating sheet 11 and the vapor chamber 20, respectively. That is, the heat dissipation assembly 100 includes the heat-conducting insulating sheet 11, the graphite sheet 12 and the vapor chamber 20 connected in sequence. Since the heat-conducting insulating sheet 11 is arranged on the side of the graphite heat dissipation film 10 away from the vapor chamber 20, the heat conduction performance of the side of the graphite heat dissipation film 10 away from the vapor chamber 20 is good. Therefore, when the heat dissipation assembly 100 provided by the embodiment of the present application is applied to the electronic device, the heat generated by the chip of the electronic device can be transmitted to the vapor chamber 20. The heat can be diffused on the vapor chamber 20 after being transmitted to the vapor chamber 20. The vapor chamber 20 can transmit the heat to the graphite heat dissipation film 10, and the graphite heat dissipation film 10 can dissipate the heat. The application of the heat-conducting insulating sheet 11 makes the heat conduction performance of the graphite heat dissipation film 10 good, so that the graphite heat dissipation film 10 can dissipate heat more quickly, thereby improving the heat dissipation performance of the heat dissipation assembly 100. That is, in the embodiment of the present application, the heat conduction performance of the heat dissipation assembly 100 can be improved by arranging the heat-conducting insulating sheet 11 on the side of the graphite sheet 12 away from the vapor chamber 20, so that the heat dissipation performance of the electronic device is good.

[0057] The embodiment of the present application provides a production method of a heat dissipation assembly, as shown in the figure, the method comprises the following steps. Figure 6

[0058] ​Step 601: adding the particulate boron nitride into the buffer solution to form a first mixed solution, wherein the buffer solution has a pH value of 8.5.

[0059] The particulate boron nitride can be boron nitride particles with a particle size of 2-5 μm, and the particle sizes of the particulate boron nitride are different, so that when the boron carbide is added into the buffer solution, the smaller boron nitride particles can be located in the gaps between the larger boron nitride particles, so that more boron nitride can be modified at one time, and the utilization rate is high. Of course, the particulate boron nitride can also be boron nitride particles with a particle size of 2-5 μm, and the particle sizes of the particulate boron nitride are the same.

[0060] In addition, the pH value of the buffer solution is 8.5, that is, the buffer solution is an alkaline solution, so as to facilitate the reaction of the boron nitride in the buffer solution with the subsequent material.

[0061] In the embodiment of the present application, before step 601, the method can further include: adding tris-hydroxymethyl aminomethane into the deionized water to form a buffer solution.

[0062] The tris-hydroxymethyl aminomethane can be added into the deionized water, and the pH value of the solution is adjusted by the tris-hydroxymethyl aminomethane. When the pH value reaches 8.5, the addition of the tris-hydroxymethyl aminomethane can be stopped at this time to obtain the buffer solution.

[0063] In addition, in the embodiment of the present application, the deionized water refers to pure water after removing ionic impurities.

[0064] In addition, in the embodiment of the present application, in order to make the pH value of the buffer solution be 8.5, in addition to adjusting the pH value by the tris-hydroxymethyl aminomethane, other reagents that can adjust the pH value can also be used, for example, potassium hydroxide is added into the deionized water to obtain a buffer solution with a pH value of 8.5.

[0065] Step 602: adding dopamine hydrochloride into the first mixed solution to react the dopamine hydrochloride with the boron nitride to form a particulate reactant.

[0066] The dopamine hydrochloride is added into the first mixed solution, so that the dopamine hydrochloride can react with the boron nitride in the buffer solution, and the two reactants generate a particulate reactant after reaction.

[0067] In addition, in some implementations, the implementation of step 602 can be: adding the dopamine hydrochloride into the first mixed solution at a preset temperature; and stirring the first mixed solution at the preset temperature for a preset time period, so that the dopamine hydrochloride reacts with the boron nitride to form a particulate reactant.

[0068] Wherein, before adding dopamine hydrochloride to the first mixed solution, the first mixed solution can be heated so that the temperature of the first mixed solution reaches a preset temperature. At this time, dopamine hydrochloride is added to the first mixed solution, and dopamine hydrochloride and boron nitride can react preferably at the preset temperature. That is, the temperature of the first mixed solution reaches the preset temperature, which is conducive to the reaction of dopamine hydrochloride and boron nitride. In addition, after adding dopamine hydrochloride, the first mixed solution can also be kept warm, so that the temperature of the first mixed solution is maintained at a preset temperature. The first mixed solution can then be stirred, and the reaction process of dopamine hydrochloride and boron nitride is accelerated by stirring. The first mixed solution can be stirred according to a preset time, so that the effect of the reaction of dopamine hydrochloride and boron nitride is better. After the reaction of dopamine hydrochloride and boron nitride, a granular reactant can be obtained. The granular reactant is actually modified boron nitride particles. That is, by adding dopamine hydrochloride to the first mixed solution, dopamine hydrochloride reacts with boron nitride, which is essentially to modify boron nitride to obtain modified boron nitride.

[0069] Among them, the preset temperature can be 75°C and the preset time can be 5 hours.

[0070] Step 603: extracting the reactant and grinding the reactant to obtain a ground reactant.

[0071] Among them, the granular reactant in the first mixed liquid can be extracted. When extracting the reactant in a granular state, the first mixed liquid can be filtered, and the granular reactant can be obtained after filtration. For example, the first mixed liquid is poured into a screen, and the liquid passes through the screen, and the granular reactant remains on the screen, so as to separate the granular reactant from the liquid and extract the reactant. After the reactant is extracted, the reactant can be ground to obtain a ground reactant, that is, the granular reactant is ground to obtain a smaller particle of the reactant, which is beneficial for subsequent processing.

[0072] In addition, after the reactants are extracted, the granular reactants may be adhered to the liquid of the first mixed liquid, which may affect the subsequent processing of the reactants. Therefore, after the reactants are extracted, the reactants can be washed multiple times with deionized water, that is, the reactants are washed with deionized water to remove the liquid of the first mixed liquid from the reactants. After washing the reactants, the washed reactants can be placed in a drying oven at a temperature of 80°C and dried. After drying, there is no liquid on the reactants. After that, the dried reactants are ground to obtain modified boron nitride particles.

[0073] Step 604: Add the ground reactant to polymethyldiphenylsiloxane containing vinyl groups, and add a vulcanizing agent to obtain a mixture.

[0074] The ground reaction is added to the polyvinyl methylphenyl siloxane containing vinyl to mix, and the polyvinyl methylphenyl siloxane containing vinyl to which the ground reaction is added is placed on a mixing machine to mix, and the mixing is carried out for about 40 minutes until the smooth gapless wrap of the roll surface of the mixing machine is formed. The smooth gapless wrap is subjected to a thin pass treatment, and the thickness of the wrap is reduced by about 5 to 8 times. After the thin pass treatment of the wrap, the curing agent is added to the wrap on the roll, and the mixing is carried out again, and after the mixing is uniform, the thin pass treatment is carried out again, and the mixture is formed after the thin pass treatment.

[0075] It should be noted that the curing agent can be diisopropyl peroxide, or the curing agent can also be diphenyl peroxide, etc. The specific form of the curing agent is not limited in the embodiment of the application.

[0076] In addition, in some embodiments, the implementation mode of step 604 can be that the ground reaction is added to the polyvinyl methylphenyl siloxane containing vinyl, and the ratio of the mass of the ground reaction to the mass of the mixture is 65%.

[0077] When the ground reaction is added to the polyvinyl methylphenyl siloxane containing vinyl, the amount of the reaction added to the polyvinyl methylphenyl siloxane containing vinyl is controlled, so that the mass ratio of the ground reaction to the mass of the mixture is 65%, so that the wrap generated by mixing meets the requirements.

[0078] It should be noted that when the ground reaction is added to the polyvinyl methylphenyl siloxane containing vinyl, it can be added in multiple times, so that the ground reaction and the polyvinyl methylphenyl siloxane containing vinyl can be uniformly mixed. And when the ground reaction is added to the polyvinyl methylphenyl siloxane containing vinyl, the compounding agent can also be added, so that the ground reaction and the polyvinyl methylphenyl siloxane containing vinyl can be uniformly mixed. The specific composition of the compounding agent can be set according to actual needs.

[0079] Step 605: The mixture is rolled to form a heat-conducting insulating sheet.

[0080] The thickness of the mixture after the thin pass treatment does not meet the use requirements, and the mixture needs to be rolled again after the mixture is formed, so that the thickness of the heat-conducting insulating sheet formed by the mixture meets the use requirements. When the mixture is rolled, the thickness of the heat-conducting insulating sheet formed can be controlled by controlling the gap between the rolls, so that the heat-conducting insulating sheet formed meets the thickness requirements.

[0081] In addition, when the mixture is rolled to form the heat-conducting insulating sheet 11, a release film can be arranged on both sides of the mixture, and the release film directly contacts the roller when the mixture is rolled, thereby protecting the heat-conducting insulating sheet 11. In addition, the strength of the heat-conducting insulating sheet 11 is not limited in the embodiment, and the mixture can be directly rolled, thereby avoiding the need to press the mixture on a substrate such as glass fiber when the conventional heat-conducting insulating sheet 11 is rolled, and the generation process is relatively simple.

[0082] Step 606: connecting the heat-conducting insulating sheet with the graphite sheet, and connecting the graphite sheet with the upper cover plate to obtain a heat dissipation assembly.

[0083] The graphite sheet 12 has two opposite surfaces, the obtained heat-conducting insulating sheet 11 is connected with one surface of the graphite sheet 12, and the other surface of the graphite sheet 12 is connected with the upper cover plate 21, so that the graphite heat dissipation film 10 can be obtained, as shown in Figure 5 The heat dissipation assembly 100 can be obtained by connecting the vapor chamber 20 with the graphite sheet 12, and the heat-conducting performance of the obtained heat dissipation assembly 100 is good, so that the thermal resistance of the vapor chamber 20 to the graphite heat dissipation film 10 can be reduced, and the heat dissipation performance of the heat dissipation assembly 100 can be improved.

[0084] The embodiment of the present application provides an electronic device, which is characterized in that the electronic device comprises a bracket and the heat dissipation assembly 100 of any one of the first aspect, and the side of the vapor chamber 20 away from the graphite layer 12 is connected with the bracket.

[0085] The electronic device comprises a bracket, one side of the bracket is connected with the heat dissipation assembly 100, the bracket is connected with the vapor chamber 20, and the other side of the bracket is connected with a chip, so that when the chip generates heat, the heat is first transmitted to the bracket, then diffused on the bracket, then transmitted to the vapor chamber 20, then diffused on the vapor chamber 20, then transmitted to the graphite heat dissipation film 10 through the upper cover plate 21, and then dissipated by the graphite heat dissipation film 10. The heat dissipation performance of the heat dissipation assembly 100 is good, so that the heat dissipation performance of the electronic device provided with the heat dissipation assembly 100 is also good, thereby avoiding the problem that the running speed of the whole machine is slowed down due to the heating of the chip, reducing the working life of the device, and improving the user experience.

[0086] It should be noted that each of the embodiments in the present specification is described in a progressive manner, and each embodiment focuses on the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0087] While the optional embodiments of the application have been described, additional modifications and changes can occur to persons skilled in the art upon reading the preceding description. It is therefore desired to be included in the appended claims as optional embodiments of the application and all modifications and changes which come within the scope of the embodiments of the application.

[0088] Finally, it should be noted that, in this document, relational terms such as first and second, and the like can be used solely to distinguish one entity from another entity without necessarily implying any actual relationship or order between such entities. Also, the terms "comprises", "comprising", or any other variation thereof are intended to cover a non-exclusive inclusion, such that a process or method that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process or method. In addition, the term "coupled" as used herein is intended to mean a direct or indirect connection between two elements.

[0089] The above detailed description of the technical solutions provided by the present application has been described in detail, and specific examples are applied herein to describe the principles and implementation modes of the present application. Meanwhile, for those skilled in the art, according to the principles and implementation modes of the present application, the specific implementation modes and application ranges will be changed. In summary, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A heat dissipating assembly, characterized by, The heat dissipation assembly comprises a heat plate and a graphite heat dissipation film, the graphite heat dissipation film comprises a heat-conducting insulating sheet and a graphite sheet, the graphite sheet is located between the heat-conducting insulating sheet and the heat plate, and opposite surfaces of the graphite sheet are connected with the heat-conducting insulating sheet and the heat plate respectively; The heat plate comprises an upper cover plate, a lower cover plate and a heat dissipation structure, the upper cover plate and the lower cover plate are connected to form a containing cavity, the heat dissipation structure is located in the containing cavity, the graphite sheet is connected with the upper cover plate, and the graphite sheet is encapsulated by the heat-conducting insulating sheet and the upper cover plate. The material of the upper cover plate is the same as that of the heat-conducting insulating sheet.

2. The heat dissipation assembly of claim 1, wherein, The heat plate comprises an upper cover plate, a lower cover plate and a heat dissipation structure, the upper cover plate and the lower cover plate are connected to form a containing cavity, the heat dissipation structure is located in the containing cavity, and the graphite sheet is connected with the upper cover plate. The material of the upper cover plate and the material of the lower cover plate are the same as that of the heat-conducting insulating sheet.

3. The heat dissipating assembly according to claim 1 or 2, characterized in that, The heat dissipation structure comprises a capillary structure, a support column and a connecting frame; The connecting frame comprises a plurality of first connecting rods arranged at intervals in a first direction and a plurality of second connecting rods arranged at intervals in a second direction, the first connecting rods intersect with the second connecting rods to form a plurality of intersection points, one end of the support column is connected to the intersection points, the other end of the support column is located in the containing cavity, and the connecting frame abuts against the upper cover plate. The capillary structure is arranged on the surface of the lower cover plate facing the upper cover plate.

4. The heat dissipation assembly of claim 1, wherein, The heat-conducting coefficient of the heat-conducting insulating sheet is greater than 0.16 W / mk.

5. A production method of a heat dissipating assembly, the production method being used for producing the heat dissipating assembly according to any one of claims 1 to 4, characterized by, The method comprises: adding granular boron nitride into a buffer solution to form a first mixed solution, wherein the pH value of the buffer solution is 8.5; adding dopamine hydrochloride into the first mixed solution to react the dopamine hydrochloride with the boron nitride to form a granular reactant; extracting the reactant and grinding the reactant to obtain a ground reactant; adding the ground reactant into polydimethylphenylsiloxane containing a vinyl group and adding a vulcanizing agent to obtain a mixture; rolling the mixture to form a heat-conducting insulating sheet; connecting the heat-conducting insulating sheet with a graphite sheet and connecting the graphite sheet with a heat plate to obtain a heat dissipation assembly.

6. The production method according to claim 5, characterized by Before adding the granular boron nitride into the buffer solution, the production method further comprises: adding tris-hydroxymethyl aminomethane into deionized water to form the buffer solution.

7. The production method according to claim 5, characterized by, adding the ground reactant into polydimethylphenylsiloxane containing a vinyl group to obtain a mixture, comprising: adding the ground reactant into polydimethylphenylsiloxane containing a vinyl group, and the mass ratio of the ground reactant to the mixture is 65%.

8. The production method according to claim 5, characterized by, The adding of the dopamine hydrochloride into the first mixed solution to react the dopamine hydrochloride with the boron nitride to form a granular reactant comprises: adding the dopamine hydrochloride into the first mixed solution at a preset temperature; stirring the first mixed solution at the preset temperature for a preset time to react the dopamine hydrochloride with the boron nitride to form a granular reactant.

9. An electronic device, comprising: The electronic device comprises a bracket and the heat dissipation assembly according to any one of claims 1-4; The heat conduction plate is connected to the bracket away from the graphite sheet.

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