High-frequency reaction processing device and high-frequency reaction processing system

Abstract

Provided are a high-frequency reaction processing device and a high-frequency reaction processing system, which can reduce the energy loss of electromagnetic waves that continuously return to the propagation line in a loop form and pass through the propagation line. It includes: a dielectric outer container 40; a covering conductor 43, made of a conductive material and maintained at the same potential as the ground potential of the high-frequency waveguide, to form a space region with the outer surface of the dielectric outer container 40; at least one high-frequency wave coupling part 42; and at least one dielectric inner container 41.

Description

Technical Field

[0001] The present invention relates to a high-frequency reaction processing apparatus and a high-frequency reaction processing system for processing a target material by electromagnetic waves excited at a high frequency. Background Art

[0002] Patent Document 1 discloses a high-frequency reaction processing apparatus in which a propagation path of high-frequency waves is formed to return in a loop through a cylindrical or spherical dielectric capacitor. The high-frequency reaction processing apparatus includes an outer container formed of a dielectric and an inner container formed of a dielectric disposed within the outer container, and a high-frequency wave coupling portion is provided on the outer surface of the outer container, and a covering portion of a conductor maintained at ground potential is provided at another outer surface portion.

[0003] The high-frequency reaction processing apparatus disclosed in Patent Document 1 has a large number of strong electric field points due to evanescent surface waves in the reaction processing region within the inner container. Further, electromagnetic waves can be propagated from the high-frequency waveguide path in the direction of an infinitely long dielectric propagation path, and it is possible to configure a large-scale infinitely long dielectric transmission path having a large area.

[0004] Prior Art Documents

[0005] Patent Document [Patent Document 1] Japanese Patent No. 3637397 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] In the above high-frequency reaction processing apparatus, an infinitely long dielectric propagation path is configured. The infinitely long dielectric propagation path refers to a propagation path of high-frequency waves that returns in a loop through a cylindrical or spherical dielectric capacitor. Therefore, by propagating electromagnetic waves from the high-frequency waveguide path in the direction of the infinitely long dielectric propagation path, evanescent waves are generated and the evanescent waves continuously propagate within the inner container, and the supplied energy of the high-frequency waves is absorbed by the load within the inner container.

[0008] However, when the load that undergoes a reaction within the inner container has a low absorption efficiency, the high-frequency energy is not effectively absorbed by the inner load. Therefore, a part of the energy of the electromagnetic waves that continuously returns in a loop through the outer container and passes through the infinitely long dielectric propagation path is absorbed due to the dielectric loss of the dielectric material, and the lost part is consumed as heat loss.

[0009] In view of the above circumstances, the present invention is proposed, and its object is to provide a high-frequency reaction processing apparatus and a high-frequency reaction processing system capable of reducing the energy loss of electromagnetic waves that return in a loop through the propagation path and pass through the propagation path.

[0010] Means for Solving the Problems

[0011] (1) To achieve the above object, the high-frequency wave response processing device of the present invention includes: an outer container made of a dielectric material and having an inner cavity that can be closed by two end faces; a covering portion made of a conductive material and maintained at the same potential as the ground potential of the high-frequency waveguide to form a spatial region with the outer surface of the outer container; at least one high-frequency wave coupling portion provided at an arbitrary position on the outer surface of the covering portion; and at least one inner container made of a dielectric material, provided at a position for receiving the high-frequency wave traveling through the high-frequency wave coupling portion without contacting the inner side surface of the outer container, and the at least one inner container has an inner cavity that can be closed by two end faces; wherein, a reaction process is performed in the inner cavity of the inner container by the electromagnetic wave guided from the high-frequency wave coupling portion.

[0012] Thus, by providing a space between the covering portion and the outer container for the evanescent wave generated by the dielectric outer container, absorption of the electromagnetic wave by the outer container can be suppressed and the processing efficiency can be improved.

[0013] (2) Further, the high-frequency reaction processing device of the present invention further includes: a lid portion made of a conductor maintained at the same potential as the ground potential of the high-frequency waveguide, and the lid portion closes the inner cavity of the inner container at the end face of the inner container; wherein, the lid portion has a fitting groove for fitting the end portion of the inner container; and the fitting groove has a depth of not less than 1 / 8 wavelength and not more than 1 / 2 wavelength of the length of the guided high-frequency wave and accommodates the end portion of the inner container without contacting the side surface of the inner container. Thus, since the electromagnetic wave is blocked and does not enter the fitting groove, a low temperature of the end portion of the inner container can be maintained.

[0014] (3) Further, the high-frequency reaction processing system of the present invention includes: a plurality of high-frequency reaction processing devices according to any one of the above; and a single processing chamber connected to the inner cavity of the inner container via an end face on one side of the inner container of each of the high-frequency reaction processing devices among the plurality of high-frequency reaction processing devices. Thus, a processing reaction with a large output can be extended to a large area.

[0015] Advantageous Effects of the Invention

[0016] According to the present invention, the energy loss of the electromagnetic wave that continuously returns to the propagation line in a loop form and passes through the propagation line can be reduced. Description of the Drawings

[0017] Figure 1 (a) and (b) of are respectively a cross-sectional plan view and a cross-sectional front view of the high-frequency reaction processing device according to the first embodiment on y1 - y2.

[0018] Figure 2 is an enlarged cross-sectional front view of the high-frequency reaction processing device according to the first embodiment.

[0019] Figure 3 (a) and (b) of [Figure Name] are respectively a cross-sectional plan view and a cross-sectional front view of the high-frequency reaction processing apparatus according to the second embodiment on y1 - y2.

[0020] Figure 4 is an enlarged cross-sectional front view of the high-frequency reaction processing apparatus according to the second embodiment.

[0021] Figure 5 (a) and (b) of [Figure Name] are respectively a cross-sectional plan view and a cross-sectional front view of the high-frequency reaction processing system according to the third embodiment on y1 - y2. Detailed Description of the Invention

[0022] [First Embodiment]

[0023] Figure 1 (a) and (b) of [Figure Name] are respectively a planar cross-sectional view and a cross-sectional front view of the high-frequency reaction processing apparatus 100 according to the first embodiment on y1 - y2. The high-frequency reaction processing apparatus 100 includes a dielectric outer container 40 (outer container), a covering conductor 43 (covering portion), a high-frequency wave coupling portion 42, a dielectric inner container 41 (inner container), and a vacuum container wall 59 (lid portion). The dielectric outer container 40 is configured by a fluororesin film layer 53 and a quartz tube 54. The dielectric inner container 41 is configured by a quartz tube 55. The high-frequency wave coupling portion 42 is provided at an arbitrary position on the outer surface of the covering conductor 43. Multiple high-frequency wave coupling portions 42 can be provided for one covering conductor 43.

[0024] The dielectric inner container 41 is made of a dielectric material and is disposed at a position for receiving high-frequency waves traveling through the high-frequency wave coupling portion 42 and not in contact with the inner side surface of the dielectric outer container 40. The dielectric inner container 41 has an inner cavity (inner space) closed by two end faces formed by the vacuum container wall 59. Multiple dielectric inner containers 41 can be provided for one outer container. The high-frequency reaction processing apparatus 100 performs a reaction process in the inner cavity of the dielectric inner container 41 by electromagnetic waves guided from the high-frequency wave coupling portion 42.

[0025] As Figure 1 shown in (a) and (b) of [Figure Name], the high-frequency reaction processing apparatus 100 can configure the discharge portion of the high-frequency plasma apparatus. y1 - y2 represents the center line parallel to the high-frequency waveguide (the same applies hereinafter). Figure 2 is an enlarged cross-sectional front view of the high-frequency reaction processing apparatus 100 according to the first embodiment.

[0026] The dielectric outer container 40 is made of a dielectric material, and its inner cavity (internal space) is closed by two end faces configured by the vacuum container wall 59 (cover portion). The covering conductor 43 is made of a conductive material to form a space region 149 with the outer surface of the dielectric outer container 40, and the covering conductor 43 is maintained at the same potential as the ground potential of the high-frequency waveguide. Thus, although an evanescent wave is generated inside the covering conductor 43 that serves as a waveguide by the dielectric outer container 40, the absorption of electromagnetic waves by the dielectric outer container 40 is suppressed by providing the space region 149 between the covering conductor 43 and the dielectric outer container 40, thereby improving the processing efficiency.

[0027] Preferably, the space region 149 is formed by spacing the inner surface of the covering conductor 43 from the outer surface of the dielectric outer container 40 by more than 1 / 60 wavelength and less than 1 / 4 wavelength of the traveling high-frequency wave. Thereby, the dielectric inner container 41 can be disposed at a position 1 / 4 wavelength from the inner side surface of the covering conductor 43, that is, corresponding to the peak of the evanescent wave, and the processing efficiency is improved.

[0028] The vacuum container wall 59 is formed on the respective end faces of the dielectric inner container 41, the dielectric outer container 40, and the covering conductor 43. The vacuum container wall 59 is configured by a conductor maintained at the same potential as the ground potential of the high-frequency waveguide to close the inner cavities of the dielectric inner container 41 and the dielectric outer container 40 at the end faces of the dielectric outer container 40 and the dielectric inner container 41. The vacuum container wall 59 has a locking portion for maintaining the dielectric outer container 40 and the covering conductor 43 separated. Thereby, a constant distance can be arranged between the inner surface of the covering conductor 43 and the outer surface of the dielectric outer container 40. For example, the locking portion can be formed as a groove into which the covering conductor 43 is fitted.

[0029] As Figure 1 shown in (a) and (b) of

[0030] In the high-frequency reaction processing apparatus 100, high-frequency waves 47 are emitted from two microwave oscillation units and guided into the vacuum container 12 through the high-frequency waveguide 44. The vacuum container 12 serves as the central portion of the discharge section. The high-frequency waveguide 44 refers to the propagation path of the high-frequency wave formed by the waveguide or the waveguide and the space region.

[0031] The process of plasma generation up to the use of the above-configured high-frequency reaction processing apparatus 100 is outlined below. After placing the target sample on the door sample stage 57 in the atmosphere, the door sample stage 57 rises and forms a contact seal connection through the O-ring at the lower vacuum container wall 59. The vacuum container 12 is decompressed, and a predetermined processing gas is introduced from the processing gas inlet 20. By introducing high-frequency electromagnetic waves along the traveling direction of the high-frequency wave 47, a high-frequency plasma having a plasma boundary plane 16 is generated in the vacuum container 12.

[0032] The dielectric outer container 40 is configured by a fluororesin film layer 53 and a quartz tube 54, and the fluororesin film layer 53 is covered on the outer side surface of the quartz tube 54. A space region 149 is provided between the outer side surface of the fluororesin film layer 53 (i.e., the outer surface of the dielectric outer container 40) and the aluminum covering conductor 43 at the ground potential, and the high-frequency waveguide 44 is formed by the covering conductor 43 and the space region 149. The high-frequency waveguide 44 is a space line in the waveguide surrounded by the grounded covering conductor 43, and a line conforming to the waveguide is formed by extending the connection to the space region 149.

[0033] The covering conductor 43 is also electrically connected to the vacuum container wall 59 made of aluminum. In the present embodiment, the dielectric inner container 41 is provided inside the dielectric outer container 40 and coaxial with the dielectric outer container 40 such that the distance from the inner side surface of the dielectric inner container 41 to the outer side surface of the fluororesin film layer 53 in the dielectric outer container 40 is 1 / 4 wavelength of the high-frequency wave to be guided.

[0034] In addition, for the purpose of cooling the dielectric outer container 40 and the dielectric inner container 41, a structure is adopted in which a gas or liquid having a small dielectric constant flows from the cooling medium inlet 71 in the lower vacuum container wall 59 into the region between the dielectric outer container 40 and the dielectric inner container 41, and the gas or liquid is released from the cooling medium outlet 72 in the upper vacuum container wall 59.

[0035] The high-frequency wave coupling portion 42 connects the high-frequency waveguide 44 and the dielectric outer container 40, and the high-frequency wave 47 propagates along the high-frequency waveguide 44 via the high-frequency wave coupling portion 42. The space region 149 between the dielectric outer container 40 and the aluminum covering conductor 43 serves as the high-frequency waveguide 44. Although the direction of the electric field usually changes according to the electromagnetic wave mode of the high-frequency wave 47, in the high-frequency reaction processing apparatus 100, the direction of the electric field is configured such that the electromagnetic wave propagates in the circumferential direction of the circular tube of the dielectric outer container 40 (i.e., the circular tube) using the TM11 mode. Therefore, an infinite-length dielectric propagation line is formed in which the electromagnetic wave returns in a loop form on the side surface of the circular tube.

[0036] The length of the inner contour of the front cross-section of the dielectric outer container 40 is designed to be an integral multiple of 1 / 4 wavelength of the high-frequency wave to be guided. Thus, the high-frequency wave 47 propagating along the circumferential direction of the dielectric outer container 40 as a dielectric propagation line causes resonance of the propagation line.

[0037] Furthermore, a high-frequency waveguide 44 that forms a cavity through the space region between the outer side surface of the dielectric outer container 40 and the ground covering conductor 43 is provided, and the attenuation of the high-frequency wave returning in a loop form in an infinitely long dielectric propagation line can be reduced. Thus, electromagnetic waves do not leak to the outside, and surface waves that form a leakage electric field are widely generated along the propagation line in the inner diameter direction of the dielectric outer container 40. Further, the covering conductor 43 is maintained at the ground potential. Thus, a large number of points with a high electric field are widely generated in a loop form at positions that are integral multiples of 1 / 4 wavelength of the surface wave in the interior guided to the conductor surface.

[0038] As described above, the position of the inner side surface of the dielectric inner container 41 disposed on the wall surface of the vacuum container 12 coincides with the points having a high electric field of the surface wave. Thus, plasma is easily and instantaneously generated in the vacuum container 12 due to the introduction of the high-frequency wave 47.

[0039] When plasma is generated, a plasma boundary plane 16 is formed in the dielectric inner container 41. Since the plasma itself has a variable impedance, a part of the surface wave is absorbed by the plasma, and the other part of the surface wave is reflected by the plasma boundary plane 16. The reflected wave alternately repeats reflection and propagation in the region formed by the plasma boundary plane 16 through the dielectric outer container 40 and the dielectric inner container 41 via the covering conductor 43.

[0040] The propagation line impedance of the high-frequency wave in this region changes together with the impedance of the plasma. Therefore, this region forms a matching circuit of a 1 / 4 wavelength impedance transformer. Thus, resonance occurs together with the plasma. Therefore, impedance matching between the propagation line and the plasma load is achieved, and finally, electromagnetic wave energy is effectively absorbed into the plasma load.

[0041] Furthermore, as the introduced power increases, the plasma density increases and the plasma boundary plane 16 begins to have characteristics approaching those of a conductor. Therefore, even if the reflected standing wave in the propagation line of the 1 / 4 wavelength impedance transformer increases, the capacitance characteristic of the propagation line increases to form a parallel resonance circuit as a whole. Therefore, the increase in the reflected standing wave acts in the direction of increasing the current value of the plasma load, and the plasma ionization efficiency increases. Thus, the reflected wave does not return to the high-frequency waveguide 44, and a non-reflection state is achieved when viewing the load from the oscillation side.

[0042] Furthermore, when there is no plasma load as a whole, the vacuum container 12 serves as a cylindrical cavity resonator, and when there is a plasma load, the vacuum container 12 serves as a dielectric resonator. Therefore, power can be effectively absorbed in the load.

[0043] As Figure 1 shown in (a) and (b) of [], even when high-frequency waves 47 are guided from multiple high-frequency waveguides 44, the standing wave is restricted to the region corresponding to the matching circuit of the 1 / 4 wavelength impedance transformer. Thus, multiple oscillation units can inject power into the load without interfering with each other, and thereby the device obtains a large amount of power.

[0044] Here, as an example, specific dimensions and capacities of the high-frequency reaction processing device in this embodiment are shown. The frequency of the high-frequency wave 47 is 2.45 GHz, its electromagnetic wave mode is the TM11 mode, and its maximum power is 1 kW. The high-frequency wave coupling part 42 is connected to the dielectric outer container 40 at an opening with a width of 70 mm and a height of 130 mm. A fluororesin film layer 53 formed of PTFE with a thickness of 2 mm is covered on the outer side surface of a quartz tube 54 having an outer diameter of 150 mm, a thickness of 3 mm, and a Z-axis direction length of 200 mm, and thereby the dielectric outer container 40 is formed. The dielectric inner container 41 is composed of a quartz tube 55 having an outer diameter of 115 mm, a thickness of 3 mm, and a Z-axis direction length of 200 mm. The covering conductor 43 made of aluminum is composed of an aluminum plate with a thickness of 0.5 mm. A 3-mm space region is provided between the covering conductor 43 made of aluminum and the outer side surface of the dielectric outer container 40, and the outer side surface of the dielectric outer container 40 is covered with a fluororesin film layer 53 formed of PTFE with a thickness of 2 mm.

[0045] The vacuum container wall 59 made of aluminum is formed into a disk shape with a thickness of 20 mm and an outer diameter of 200 mm. The lower vacuum container wall has a hole with a diameter of 100 mm at its center, and the hole is closed by a door sample stage. The vacuum exhaust port 56 is a tube with an inner diameter of 20 mm and an outer diameter of 1 inch and is connected to the vacuum tube from a vacuum pump through a connection point of an O-ring seal. The cooling medium inlet 71 is connected to a joint of a 1 / 4-inch gas tube and supplies dry air for cooling at 30 psi.

[0046] In this embodiment, the process gas inlet 20 and the vacuum exhaust port 56 are provided in the same vacuum container wall 59, however, they can be separately provided on the opposite vacuum container wall 59.

[0047] [Example 1-1]

[0048] The test example of plasma generation in this embodiment is described below. A high-frequency reaction processing apparatus according to the above-described configuration example is used. As the vacuum condition, the pressure is set to 13 Pa to 1000 Pa, and N2, O2, and their mixed gases are used. The gas flow rate is 50 cc / min to 300 cc / min. As the microwave power, 2 units are supplied at 50 W to 1000 W per unit. Regarding the vacuum pump system, a rotary pump with a pumping capacity of 1000 L / min is used. The degree of vacuum is measured by a Pirani vacuum gauge on the vacuum exhaust line. The pressure is adjusted by opening and closing a manual switching valve located on the vacuum exhaust pipeline. Under all the above generation conditions, plasma discharge is obtained from the moment of power input. Then, a plasma with uniform plasma emission is obtained through the vacuum container. Even when continuous operation is performed for more than 1000 hours, no abnormality is observed in the magnetron oscillation section.

[0049] [Example 1-2]

[0050] The test example of the processing efficiency in this embodiment is described below. As a sample, an organic photoresist with a thickness of 2 μm covering a silicon substrate with an area of 20 cm 2 is used to test the stripping rate. As the processing conditions, the substrate temperature is set to room temperature, the microwave power is set to 500 W, the processing gas is set to oxygen (100 cc / min), the processing pressure is set to 150 Pa, and the processing time is set to 20 seconds. In the high-frequency reaction processing apparatus of this embodiment, the stripping rate of the photoresist is 4 μm / min. This is a result that exceeds 150% of the prior art. As a comparative example, in a conventional high-frequency reaction processing apparatus, which differs only in that the inner diameter of the covering conductor made of aluminum and coinciding with the outer diameter of the dielectric outer container does not provide a space region, and other conditions are the same. After measuring the processing, the substrate temperature is about 60 °C, and organic matter stripping can be performed at high speed without increasing the substrate temperature.

[0051] In the case of a general organic matter stripping apparatus using oxygen microwave plasma, the stripping rate increases with the rise of the substrate temperature. In this case, unless the temperature of the substrate rises above 140 degrees, that is, the glass transition point of the organic resist film, a stripping rate of more than 1 μm / min cannot be obtained. In the high-frequency reaction processing apparatus of this embodiment, it can be judged that the reason why the substrate temperature does not rise and the stripping speed is high is that a high-density excited plasma is generated in the plasma boundary plane 16 near the inner wall portion of the dielectric inner container 41 and a large amount of oxygen radicals are generated.

[0052] [Second Embodiment]

[0053] In the above-described embodiment, when the load in the internal container is a decompression plasma discharge, the plasma discharge body diffuses throughout the internal container, the gas introduction section, and the decompression pipe section. Since the plasma discharge body is a conductor, high-frequency waves propagate in the plasma discharge body and also propagate to the decompression seal section in the outer end face of the internal container. Therefore, as a result of the high-frequency waves being absorbed by the sealing material having dielectric loss, the sealing material deteriorates due to heat, and ultimately, the airtight seal deteriorates. In addition, the absorption of ultraviolet rays by the light emission radiation of the plasma discharge body and the heat generated thereby also have an impact. Its main purpose is to cut off vacuum ultraviolet rays to the members at the end of the internal container through electroluminescence and electromagnetic waves.

[0054] Figure 3 (a) and (b) of are a cross-sectional plan view and a cross-sectional front view of the high-frequency reaction processing apparatus 200 according to the second embodiment on y1 - y2. The high-frequency reaction processing apparatus 200 includes a dielectric outer container 40 (outer container), a covering conductor 43 (covering section), a high-frequency wave coupling section 42, a dielectric inner container 41 (inner container), and a vacuum container wall 259 (lid section). The dielectric outer container 40 is configured by a fluororesin film layer 53 and a quartz tube 54. The dielectric inner container 41 is configured by a quartz tube 55. As Figure 3 shown in (a) and (b) of , the high-frequency reaction processing apparatus 200 can constitute a discharge section of a high-frequency plasma apparatus. Figure 4 is an enlarged cross-sectional front view showing the high-frequency reaction processing apparatus 200.

[0055] The vacuum container wall 259 includes a groove 231 (fitting groove) for fitting the end of the dielectric inner container 41. The groove 231 has a depth of 1 / 8 wavelength or more and 1 / 2 wavelength or less of the wavelength of the high-frequency wave to be guided and accommodates the end of the dielectric inner container 41 without contacting the side surface of the dielectric inner container 41. Thus, since electromagnetic waves are blocked and do not enter the groove 231, the low temperature of the end of the dielectric inner container 41 can be maintained. The groove 231 has a depth of 1 / 4 wavelength or more of the wavelength of the high-frequency wave to be guided. Thus, the high-frequency waves are blocked so as not to leak to the end of the dielectric inner container 41.

[0056] An O-ring 58 (sealing member) is provided between the dielectric inner container 41 and the vacuum container wall 259 to seal the inner cavity of the dielectric inner container 41. The O-ring 58 is provided at any position accommodated by the groove 231. Thus, the temperature of the O-ring 58 for sealing the dielectric inner container 41 can be kept low, and damage to the O-ring 58 can be prevented.

[0057] The dielectric inner container 41 can be made of alumina. Thereby, the durability against corrosive gases at high temperatures can be improved. For example, this is effective when generating plasma in the inner cavity of the dielectric inner container 41. Therefore, plasma can be generated with high efficiency.

[0058] In the case where reaction processing of a target material is performed in the inner cavity of the dielectric inner container 41 by electromagnetic waves guided from the high-frequency wave coupling section, it is preferable that the dielectric inner container 41 be made of quartz. Therefore, it can be applied to the decomposition of fluorocarbons and acidic gases.

[0059] As in the first embodiment, the vacuum container 12 is configured by a cylindrical quartz tube 55, aluminum vacuum container walls 59 located on the upper and lower sides, and an aluminum door sample stage 57 and is vacuum-sealed by an O-ring 58. The dielectric inner container 41 is configured by the quartz tube 55. This embodiment is not limited to the deformation of the first embodiment and can be a deformation of a high-frequency reaction processing apparatus without a space region.

[0060] In the first embodiment, the O-ring 58 may suffer exposure deterioration due to long-term use and usage conditions of the apparatus, and due to the absorption of the leaked electromagnetic waves, heat and plasma release vacuum ultraviolet rays from the high-frequency plasma having the plasma boundary plane 16 generated in the vacuum container 12.

[0061] In this embodiment, grooves 231 having a width of 1 / 8 wavelength or less of the high-frequency wave used and a depth of 1 / 4 wavelength or more are respectively formed in the aluminum vacuum container walls 259 located on the upper and lower sides. Therefore, the sealing portions for the two end faces of the cylindrical quartz tube 55 are provided in the grooves 231.

[0062] This structure suppresses high-frequency waves, and the high-frequency waves do not leak to the sealing portions disposed in the grooves. Further, the vacuum ultraviolet rays of plasma discharge are shielded by the above grooves to suppress deterioration of the O-ring.

[0063] Further, it is preferable that the interiors of the aluminum vacuum container walls 259 located on the upper and lower sides have a water-cooling structure. Thereby, deterioration due to heat can also be solved.

[0064] Therefore, even under the severe conditions of continuously generating high-power high-density plasma for a long time, deterioration of the pressure-reducing seal can be suppressed, and maintenance-free operation can be achieved.

[0065] Here, as an example, specific dimensions and capacities of a high-frequency reaction processing apparatus according to the present embodiment are shown. The frequency of the high-frequency wave 47 is 2.45 GHz, its electromagnetic wave mode is the TM11 mode, and its maximum power is 1 kW. The high-frequency wave coupling unit 42 is connected to the dielectric outer container 40 at an opening having a width of 70 mm and a height of 130 mm. The dielectric outer container 40 is composed of a quartz tube 45 and a fluororesin film layer 53. The quartz tube 54 has an outer diameter of 150 mm, a thickness of 3 mm, and a Z-axis length of 200 mm, and the fluororesin film layer 53 is formed of PTFE having a thickness of 2 mm and covering the outer side surface of the quartz tube 54.

[0066] The dielectric inner container 41 is composed of a quartz tube 55 having an outer diameter of 115 mm, a thickness of 3 mm, and a Z-axis direction length of 260 mm. The covering conductor 43 made of aluminum is composed of an aluminum plate having a thickness of 0.5 mm. A space region of 3 mm is provided between the outer side surface of the aluminum covering conductor 43 and the dielectric outer container 40.

[0067] The vacuum container wall 259 made of aluminum is a disk-shaped member having a thickness of 50 mm and an outer diameter of 200 mm and is water-cooled through a water cooling channel. Further, a groove 231 having an outer diameter of 160 mm, an inner diameter of 140 mm, and a depth of 30 mm is formed.

[0068] The lower vacuum container wall has a hole with a diameter of 100 mm at the center, and the hole is closed by a door sample stage. The vacuum exhaust port 256 is a tube having an inner diameter of 20 mm and an outer diameter of 1 inch and is connected to a vacuum tube from a vacuum pump through a connection joint having an O-ring seal. The cooling medium inlet 71 is connected to a 1 / 4-inch gas pipe joint, and when using this inlet, dry air is supplied at 30 psi for cooling.

[0069] [Example 2]

[0070] A test example of continuous plasma generation in the present embodiment is described below. As the vacuum condition, the pressure is 130 Pa, and the gas used is N2 gas. As the microwave power, two units are provided at 1000 W per unit. As the vacuum pumping system, a rotary pump with a pumping volume of 1000 L / min is used. The vacuum is measured by a Pirani vacuum gauge located on the vacuum exhaust line, and the pressure is adjusted by opening and closing a manual switching valve located on the vacuum exhaust line. Under all the above conditions, plasma discharge is instantaneously obtained due to power-on, and a plasma that generates uniform plasma emission in the vacuum container is obtained. Further, even when continuous operation is performed for 1000 hours or longer, no problem occurs with the vacuum seal, and no deterioration is observed in the transparent silicone used as the O-ring seal having a hardness of 50 degrees.

[0071] In this embodiment, the processing gas inlet 220 and the decompression exhaust port 256 are provided in the same vacuum container wall 259. However, they may be separately provided in the vacuum container walls 259 facing each other.

[0072] In this embodiment, the O-ring 58 is provided at the bottom of the groove 231 and a sealing portion is arranged at the end face of the quartz tube 55. However, the sealing portion may be arranged on the outer side surface or the inner side surface near the end face of the quartz tube 55.

[0073] [Third Embodiment]

[0074] In the first embodiment, for a load having a large volume and a large area, a large-output input can be achieved by increasing the diameter of the inner container and coupling a plurality of high-frequency wave coupling portions to the same load. However, since the curvature of the side surface of the inner container becomes constant or larger to planarize the side surface by increasing the diameter of the inner container, it becomes difficult to form an infinitely long dielectric propagation line through which the high-frequency propagation line returns in a loop form through the dielectric capacitor. In particular, in the application of a decompression plasma reaction processing apparatus that requires a large-area processing, certain measures become necessary.

[0075] Figure 5 Figures (a) and (b) are respectively a cross-sectional plan view and a cross-sectional front view of the high-frequency reaction processing system 310 according to the third embodiment on y1 - y2. The high-frequency reaction processing system 310 includes a plurality of high-frequency reaction processing apparatuses 300 and a single down-flow processing chamber container 461. The high-frequency reaction processing apparatus 300 includes a dielectric outer container 40 (outer container), a covering conductor 43 (covering portion), a high-frequency wave coupling portion 42, a dielectric inner container 41 (inner container), and a vacuum container wall 359 (cover portion). The plurality of high-frequency reaction processing apparatuses 300 have the same shape, are arranged symmetrically centered, and share the vacuum container wall 359 with each other. Thus, the high-frequency reaction processing can be performed in a well-balanced arrangement.

[0076] The dielectric outer container 40 is configured by a fluororesin film layer 53 and a quartz tube 54. The dielectric inner container 41 is configured by a quartz tube 55. As Figure 5 shown in Figures (a) and (b), the high-frequency reaction processing system 310 can configure the discharge portion of the high-frequency plasma device.

[0077] The down-flow processing chamber container 461 is connected to the inner cavity (inner space) of the dielectric inner container 41 via one end face of the dielectric inner container 41 in each of the plurality of high-frequency reaction processing apparatuses. Thus, a processing reaction with a large output can be extended to a large area.

[0078] The outer container in the plurality of high-frequency reaction processing apparatuses 300 is cylindrical, and the radius of curvature of the cylindrical outer container is 150 mm or less. Thus, since the radius of curvature can be reduced, electromagnetic waves can keep traveling.

[0079] This embodiment is a modification of the first embodiment and is intended to process a substrate with a larger diameter. Therefore, this embodiment has higher efficiency, and when multiple high-frequency waves are guided to the same load, it is easy to implement a processing apparatus with a larger diameter. This embodiment is not limited to the modification of the first embodiment and can be a modification of a high-frequency reaction processing apparatus without a spatial region or can be a modification of the second embodiment.

[0080] As Figure 5 shown in (a) and (b) of, three vacuum containers 12 serving as the center of the plasma discharge section are arranged by three cylindrical quartz tubes 55 and a pair of aluminum vacuum container walls 359 located on the upper and lower sides. The quartz tubes 55 arrange the dielectric inner container 41. The vacuum container 12 is connected to a downflow processing chamber container 461 with a larger diameter in the lower aluminum vacuum container wall, and thus, the entire vacuum container is arranged.

[0081] The high-frequency plasma formed in each of the three vacuum containers 12 has a plasma boundary plane 16 and is separated from the downflow processing chamber container 461 by a porous conductor plate 460. In this embodiment, a high-frequency reaction processing system is used as the plasma source of the plasma radical downflow processing apparatus.

[0082] The process of radical surface treatment by the plasma radical downflow processing apparatus is outlined below. First, a target sample is carried from the door 462 to a sample table 463 in the downflow processing chamber container 461. After the door is closed, gas is exhausted from the decompression exhaust port 456, the pressure is reduced, and while controlling the flow rates of the three processing gas inlets 320, a gas for plasma generation is introduced in an evenly distributed manner.

[0083] Plasma is formed in each of the three vacuum containers 12 by supplying high-frequency waves 47 from three oscillation sources. The generated reactive species are transferred to the downflow processing chamber container 461 in the decompression direction through the hole portions of the porous conductor plate 460, and a radical surface reaction treatment is performed on the sample.

[0084] The configuration of the vacuum container 12 serving as the central portion of the discharge section is the same as that of the first embodiment, except for the decompression exhaust port. In Figure 5 the embodiment shown in (a) and (b) of, there is one high-frequency waveguide 44, but there can be multiple high-frequency waveguides.

[0085] Here, as an example, specific dimensions and capacities of a high-frequency reaction processing system according to the present embodiment are shown. The frequency of the high-frequency wave 47 of the three oscillation sources is 2.45 GHz, its electromagnetic wave mode is the TM11 mode, and its maximum power is 1 kW. The high-frequency wave coupling unit 42 is connected to the dielectric outer container 40 at an opening having a width of 70 mm and a height of 130 mm. The dielectric outer container 40 is composed of a quartz tube 54 and a PTFE fluororesin film layer 53. The PTFE fluororesin film layer 53 has a thickness of 4 mm and covers the outer side surface of the quartz tube 54. The quartz tube 54 has an outer diameter of 150 mm, a thickness of 3 mm, and a Z-axis length of 200 mm. The dielectric inner container 41 is composed of a quartz tube 55 having an outer diameter of 115 mm, a thickness of 3 mm, and a Z-axis direction length of 200 mm. The covering conductor 43 made of aluminum is formed by cutting the entire aluminum block. The covering conductor 43 includes three vacuum containers 12, and the covering conductor 43 is cooled by a water cooling channel provided therein.

[0086] The vacuum container wall 359 made of aluminum is obtained by processing a plate having a thickness of 30 mm and an outer diameter of 380 mm. The aluminum vacuum container wall 359 has three holes arranged at equal angles of P.C.D 600φ on the lower side from the center of the entire vacuum container wall and is connected to the aluminum down-flow processing chamber container 461 through an O-ring seal. Three porous conductor plates 460 are provided at hole positions having a diameter of 100 mm and arranged at equal angles of P.C.D 600φ on the lower side from the center of the vacuum container wall. Each porous conductor plate 460 is made of stainless steel and forms a grid shape with a porosity of 30%, a thickness of 2 mm, and a diameter of 100 mm. Each porous conductor plate 460 separates the plasma formed in the region between the vacuum container 12 and the down-flow processing chamber container 461. The decompression exhaust port 456 is an NW40 hole tube as a vacuum tube and is connected to the vacuum tube from a vacuum pump through a connection joint having an O-ring seal.

[0087] As a cooling medium inlet, a 1 / 4-inch gas pipe joint is connected to the high-frequency waveguide 44. Dry air is supplied to the cooling medium inlet at 30 psi for cooling.

[0088] In this embodiment, Figure 5 the operating conditions and impedance matching of the ionization plasma discharge shown in (a) and (b) are the same as those of the first embodiment.

[0089] Thus, a high-performance processing device is achieved by installing the high-efficiency plasma generation source of the high-frequency waveguide 44 having a smaller curvature to various types of the same processing loads.

[0090] [Other]

[0091] In the above-described embodiment, although quartz is used as the structural material of the dielectric inner container 41, however, other dielectrics having a lower dielectric constant can be used. For example, any alumina-based ceramic can be used. Further, as the dielectric outer container 40, all dielectrics having a lower dielectric constant can be used. Further, the dielectric outer container 40 can be formed by laminating a plurality of dielectric layers of different materials.

[0092] In addition, in the above-described embodiment, a fluororesin film layer 53 formed of PTFE and covering the outer side surface of the quartz tube 54 is used in the dielectric outer container 40, but a fluororesin having a depletion layer can be used. In this case, the performance of the dielectric propagation line can be improved by selecting an appropriate depletion rate to adjust the dielectric constant of the fluororesin layer. Alternatively, a thin mica can be covered on the outer side surface of the quartz tube 54 in a layered structure. Further, for the same purpose, porous ceramics can be used as the dielectric outer container 40.

[0093] Further, in the above-described embodiment, two high-frequency wave coupling portions 42 are provided and symmetrically arranged with respect to the cylindrical axis center, but one or more than three high-frequency wave coupling portions can be provided around the cylindrical axis, and further, a plurality of high-frequency wave coupling portions can be provided in the cylindrical axial direction.

[0094] In the above-described embodiment, the dielectric inner container 41, the dielectric outer container 40, and the covering conductor 43 are all formed in a cylindrical shape, but they can be formed in an elliptical cylindrical shape. Further, in the dielectric inner container 41 of the above-described embodiment, the end faces are open, but the end faces can also be formed by closing the upper and lower end faces except for the gas inlet and outlet. Considering ease of manufacture, the dielectric inner container 41 of this shape is preferably made of quartz other than alumina.

[0095] This international application claims the priority based on Japanese Patent Application No. 2020-51160 filed on March 23, 2020, and incorporates the entire Japanese Patent Application No. 2020-51160 by reference.

[0096] Symbol description 12 Vacuum container

[0097] 16 Plasma boundary plane 20 Process gas inlet

[0098] 40 Dielectric outer container

[0099] 41 Dielectric inner container

[0100] 42 High-frequency wave coupling portion

[0101] 43 Covering conductor

[0102] 44 High-frequency waveguide

[0103] 47 High-frequency wave

[0104] 53 Fluororesin film layer

[0105] 54 Quartz tube

[0106] 55 Quartz tube

[0107] 56 Vacuum exhaust port

[0108] 57 Door sample stage

[0109] 58 O-ring

[0110] 59 Vacuum vessel wall

[0111] 71 Cooling medium inlet

[0112] 72 Cooling medium outlet

[0113] 100 High-frequency reaction processing device

[0114] 149 Space region

[0115] 200 High-frequency reaction processing device

[0116] 220 Processing gas inlet

[0117] 231 Groove

[0118] 256 Vacuum exhaust port

[0119] 259 Vacuum vessel wall

[0120] 271 Cooling medium inlet

[0121] 272 Cooling medium outlet

[0122] 300 High-frequency reaction processing device

[0123] 310 High-frequency reaction processing system

[0124] 320 Processing gas inlet

[0125] 359 Vacuum vessel wall

[0126] 456 Vacuum exhaust port

[0127] 460 Porous conductor plate

[0128] 461 Downflow processing chamber container

[0129] 462 Door

[0130] 463 Sample stage

Claims

1. A high-frequency reaction processing device, comprising: An outer container, made of a dielectric material and having an inner cavity that can be enclosed by two end faces; A covering portion, made of a conductive material and maintained at the same potential as the ground potential of the high-frequency waveguide; At least one high-frequency wave coupling portion, provided at an arbitrary position on the outer surface of the covering portion; and At least one inner container, made of a dielectric material, provided at a position for receiving the high-frequency wave traveling through the high-frequency wave coupling portion and not contacting the inner side surface of the outer container, and at least one of the inner containers has an inner cavity that can be enclosed by two end faces; A lid portion, made of a conductor maintained at the same potential as the ground potential of the high-frequency waveguide, and the lid portion closes the inner cavity of the inner container at the end face of the inner container; Wherein, the lid portion has a fitting groove for fitting the end portion of the inner container; The fitting groove has a depth of not less than 1 / 8 wavelength and not more than 1 / 2 wavelength of the length of the guided high-frequency wave and accommodates the end portion of the inner container without contacting the side surface of the inner container; and The reaction processing is performed in the inner cavity of the inner container by the electromagnetic wave guided from the high-frequency wave coupling portion.

2. The high-frequency reaction processing device according to claim 1, further comprising: A sealing member, provided between the inner container and the lid portion for sealing the inner cavity of the inner container; Wherein, the sealing member is provided at an arbitrary position to be accommodated in the fitting groove.

3. The high-frequency reaction processing device according to claim 1 or 2, Among them, The inner container is made of alumina.

4. The high-frequency reaction processing device according to claim 1 or 2, Among them, The fitting groove has a depth of not less than 1 / 4 wavelength of the guided high-frequency wave.

5. The high-frequency reaction processing device according to claim 1, Among them, A space region is formed between the covering portion and the outer surface of the outer container.

6. The high-frequency reaction processing device according to claim 5, Among them, The space region is formed by making the inner surface of the covering portion spaced from the outer surface of the outer container by not less than 1 / 60 wavelength and not more than 1 / 4 wavelength of the traveling high-frequency wave.

7. The high-frequency reaction processing device according to claim 5 or 6, Among them, The lid portion is provided on each end face of the outer container and the covering portion to close the inner cavity; and The lid portion has a locking portion for maintaining the separation between the outer container and the covering portion.

8. The high-frequency reaction processing device according to claim 1, 2, or 5, Among them, Plasma is generated in the inner cavity of the inner container.

9. The high-frequency reaction processing device according to claim 1, 2, or 5, Among them, The reaction processing of the target material is performed in the inner cavity of the inner container by the electromagnetic wave guided from the high-frequency wave coupling portion.

10. A high-frequency reaction processing system, comprising: A plurality of high-frequency reaction processing devices according to claim 1, 2, or 5, and A single processing chamber, connected to the inner cavity of the inner container via an end face on one side of the inner container of each high-frequency reaction processing device among the plurality of high-frequency reaction processing devices.

11. The high-frequency reaction processing system according to claim 10, Among them, a plurality of the high-frequency reaction processing devices have the same shape and are symmetrically arranged in a centered manner, and the end surfaces of the outer container and the inner container share each other.

12. The high-frequency reaction processing system according to claim 10, Among them, the outer containers of a plurality of the high-frequency reaction processing devices are cylinders, and the outer container of the cylinder has a radius of curvature of 150 mm or less.

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