Voltage tuned active inductor

Abstract

A voltage tuning active inductor is composed of eight units, i.e. a first transconductance unit (1), a second transconductance unit (2), a third transconductance unit (3), an active feedback resistance unit (4), an active feedback capacitance unit (5), a shunt unit (6), a first DC bias unit (7), and a second DC bias unit (8). The division and cooperation of the eight units can respectively realize the following six kinds of inductance comprehensive performances: in a high-frequency working zone, a large inductance value and a large range of independent adjustment of the inductance value relative to the Q value; in the high-frequency working zone, a high Q value and a large range of independent adjustment of the Q value relative to the inductance value; when a working frequency band is adjusted in a large range, a Q peak value can be kept basically unchanged; when the Q peak value is adjusted in a large range, the working frequency band can be kept basically unchanged; when the working frequency band is adjusted in a large range, an inductance peak value can be kept basically unchanged; and when the inductance peak value is adjusted in a large range, the working frequency band can be kept basically unchanged.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency integrated circuits, and in particular to a voltage-tuned active inductor. Background Art

[0002] As one of the most widely used basic components, the performance of inductors has a direct impact on the performance of radio frequency integrated circuits such as filters, low-noise amplifiers, and oscillators.

[0003] Currently, on-chip metal thin film passive spiral inductors are widely used in RF integrated circuits. Although they have some advantages, such as low noise and the absence of external bias voltage and current, they are large in size, fixed in structure, and have large parasitic resistance and capacitance, as well as high-frequency substrate losses. This makes it difficult to simultaneously achieve a small area, large inductance, high Q value, and a wide operating frequency band. Furthermore, the inductance, Q value, and operating frequency band cannot be adjusted, which restricts their application in highly integrated, reconfigurable, and high-performance RF integrated circuits. To address the problems of on-chip metal thin film passive spiral inductors, scholars at home and abroad have shown great interest in replacing passive spiral inductors with active inductors synthesized by transistors.

[0004] However, current active inductors are widely synthesized using positive and negative transconductors, relying too heavily on them to achieve inductor performance. While the performance of active inductors can be improved by adding various auxiliary units, the synergy between the positive and negative transconductors and the auxiliary units is insufficient, making it difficult to improve or adjust one of the three performance indicators—inductance, Q factor, and operating frequency band—without affecting the remaining two. Therefore, there is an urgent need for an active inductor circuit with clear division of labor among multiple units and close collaboration between units to balance the inductance, Q factor, and operating frequency band indicators, thereby achieving excellent overall performance. It is also desirable for an active inductor circuit to achieve diverse and excellent overall performance. Summary of the Invention

[0005] To address the problems of current active inductors, the present invention implements a voltage-tuned active inductor. In the high-frequency operating range, it has a large inductance value, and the inductance value can be adjusted independently over a wide range relative to the Q value. In the high-frequency operating range, it has a high Q value, and the Q value can be adjusted independently over a wide range relative to the inductance value. When the operating frequency band is adjusted over a wide range, the Q peak value can remain essentially unchanged. When the Q peak value is adjusted over a wide range, the operating frequency band can remain essentially unchanged. When the operating frequency band is adjusted over a wide range, the inductance peak value can remain essentially unchanged. When the inductance peak value is adjusted over a wide range, the operating frequency band can remain essentially unchanged. Thus, a single active inductor circuit achieves six excellent comprehensive performances in one.

[0006] The present invention adopts the following technical solutions:

[0007] A voltage-tuned active inductor with a circuit topology such as Figure 1 As shown, it is characterized by comprising: a first transconductance unit (1), a second transconductance unit (2), a third transconductance unit (3), an active feedback resistance unit (4), an active feedback capacitance unit (5), a shunt unit (6), a first DC bias unit (7), and a second DC bias unit (8).

[0008] The first transconductance unit (1) of the active inductor comprises a first N-type MOS transistor (M1) and a first voltage modulation terminal (V tune1 ) of the second N-type MOS transistor (M2); the second transconductance unit (2) includes a third N-type MOS transistor (M3); the third transconductance unit (3) includes a fifth N-type MOS transistor (M5) and a voltage bias terminal (V B ) of a fourth N-type MOS transistor (M4); an active feedback resistor unit (4) comprising a first passive resistor (R1) and a second voltage modulation terminal (V tune2 ) of the sixth N-type MOS transistor (M6); the active feedback capacitor unit (5) includes a third voltage modulation terminal (V tune3 ) of the seventh N-type MOS transistor (M7); the shunt unit (6) includes a fourth voltage modulation terminal (V tune4 ) of an eighth P-type MOS transistor (M8); a first DC bias unit (7) including a fifth voltage modulation terminal (V tune5 ) of the ninth N-type MOS transistor (M9); the second DC bias unit (8) includes a tenth P-type MOS transistor (M 10 ), the eleventh P-type MOS transistor (M 11 ) and a second passive resistor (R2).

[0009] The input terminal of the active inductor (V in ) is simultaneously connected to the gate of the first N-type MOS transistor (M1), the source of the third N-type MOS transistor (M3), the gate of the fifth N-type MOS transistor (M5) and the drain of the ninth N-type MOS transistor (M9); the source of the first N-type MOS transistor (M1) is connected to the ground terminal (GND), the drain of the first N-type MOS transistor (M1) is simultaneously connected to the source of the second N-type MOS transistor (M2) and the drain of the eighth P-type MOS transistor (M8); the gate of the second N-type MOS transistor (M2) is connected to the first voltage modulation terminal (V tune1 ), the drain of the second N-type MOS transistor (M2) is connected to the drain of the fourth N-type MOS transistor (M4), the drain of the eleventh P-type MOS transistor (M 11), the drain of the sixth N-type MOS transistor (M6) and the first end of the first passive resistor (R1); the drain of the third N-type MOS transistor (M3) and the power supply terminal (V DD ), the gate of the third N-type MOS transistor (M3) is simultaneously connected to the drain of the sixth N-type MOS transistor (M6), the second end of the first passive resistor (R1) and the gate of the seventh N-type MOS transistor (M7); the gate of the fourth N-type MOS transistor (M4) is connected to the voltage bias terminal (V B ), the source of the fourth N-type MOS transistor (M4) is connected to the drain of the fifth N-type MOS transistor (M5); the source of the fifth N-type MOS transistor (M5) is connected to the ground terminal (GND); the gate of the sixth N-type MOS transistor (M6) is connected to the second voltage modulation terminal (V tune2 ) is connected; the source, drain and substrate of the seventh P-type MOS transistor (M7) are all connected to the third voltage modulation terminal (V tune3 ) is connected; the gate of the eighth P-type MOS transistor (M8) is connected to the fourth voltage modulation terminal (V tune4 ) is connected to the source of the eighth P-type MOS transistor (M8) and the power supply terminal (V DD ) is connected; the source of the ninth N-type MOS transistor (M9) is connected to the ground terminal (GND), the gate of the ninth N-type MOS transistor (M9) is connected to the fifth voltage modulation terminal (V tune5 ) is connected; the tenth P-type MOS transistor (M 10 ) source and the power supply terminal (V DD ) is connected, the tenth P-type MOS transistor (M 10 ) is connected to the gate of the tenth P-type MOS transistor (M 10 ) of the drain, the eleventh P-type MOS transistor (M 11 ) of the gate and the first end of the second passive resistor (R2); an eleventh P-type MOS transistor (M 11 ) source and the power supply terminal (V DD ); a second end of the second passive resistor (R2) is connected to the ground (GND).

[0010] The first DC bias unit (7) of the active inductor provides a DC bias for the second transconductance unit (2), and the second DC bias unit (8) provides a DC bias for the first transconductance unit (1) and the third transconductance unit (3) at the same time.

[0011] The first transconductance unit (1) and the second transconductance unit (2) of the active inductor form a first loop. in ) has an impedance characteristic that is an inductive reactance characteristic; the second transconductance unit (2) and the third transconductance unit (3) form a second loop, at the active inductor input terminal (V in) also presents an inductive reactance characteristic; and the first loop and the second loop are connected in parallel, which increases the rotation capacitance, thereby obtaining a large inductance value for the active inductor. tune4 ) to change the transconductance g of the first N-type MOS transistor (M1) m1 and regulating the fifth voltage modulation terminal (V tune5 ) to change the transconductance g of the third N-type MOS transistor (M3) m3 , together realizing a wide range of adjustment of the inductance value, but also causing the Q value to change. To compensate for the change of the Q value, on the one hand, by adjusting the second voltage modulation terminal (V tune2 ) to change the equivalent series resistance and equivalent parallel conductance of the active inductor, and on the other hand, by adjusting the third voltage modulation terminal (V tune3 ) to change the equivalent capacitance of the seventh N-type MOS transistor (M7), thereby changing the equivalent series resistance of the active inductor. Ultimately, the active inductor achieves a large inductance value in the high-frequency operating range, and the inductance value can be independently adjusted over a wide range relative to the Q value.

[0012] The first N-type MOS transistor (M1) and the second N-type MOS transistor (M2) of the first transconductance unit (1) form a common source-common gate structure, which reduces the equivalent series resistance of the active inductor and increases the Q value of the active inductor; the fourth N-type MOS transistor (M4) and the fifth N-type MOS transistor (M5) of the third transconductance unit (3) form a common source-common gate structure, which reduces the equivalent series resistance of the active inductor and further increases the Q value of the active inductor; the active feedback resistance unit (4) consists of a first passive resistor (R1) and a second voltage modulation terminal (V tune2 ) is composed of a sixth N-type MOS transistor (M6), which reduces the equivalent series resistance and equivalent parallel conductance of the active inductor and further increases the Q value of the active inductor; the active feedback capacitor unit (5) is composed of a third voltage modulation terminal (V tune3 ) is composed of a seventh N-type MOS transistor (M7) which can be equivalent to a capacitor, thereby reducing the equivalent series resistance of the active inductor and further increasing the Q value of the active inductor. Finally, the active inductor achieves a high Q value. tune1 ) to change the transconductance g of the common-gate second N-type MOS transistor (M2) m2 , thereby changing the equivalent series resistance of the active inductor, achieving a wide range of Q value adjustment, but the inductance value remains almost unchanged. This is because the equivalent transconductance of the first N-type MOS transistor (M1) and the second N-type MOS transistor (M2) in the common source-common gate configuration is the transconductance g of the common source first N-type MOS transistor (M1).m1 The DC bias current provided to the first N-type MOS transistor (M1) by the shunt unit (6) and the second DC bias unit (8) does not change, and thus its transconductance g m1 The active inductor achieves a high Q value in the high-frequency operating region, and the Q value can be independently adjusted over a wide range relative to the inductance value.

[0013] Furthermore, the fourth voltage modulation terminal (V tune4 ) to change the transconductance g of the first N-type MOS transistor (M1) m1 , achieving a wide range of control over the operating frequency band, but this will also lead to a change in the Q peak value. Compensation for the change in Q peak value is achieved by adjusting the second voltage modulation terminal (V tune2 ) to change the equivalent series resistance and equivalent parallel conductance of the active inductor, and on the other hand, by adjusting the third voltage modulation terminal (V tune3 ) to change the capacitance of the seventh N-type MOS transistor (M7), thereby changing the equivalent series resistance of the active inductor. Ultimately, the active inductor achieves the characteristic that the Q peak value can remain substantially unchanged when the operating frequency band is adjusted over a wide range.

[0014] Regulate the first voltage modulation terminal (V tune1 ) to change the transconductance g of the second N-type MOS transistor (M2) m2 , thereby changing the equivalent series resistance of the active inductor, and realizing a wide range of Q value adjustment. Furthermore, the bias current of the first N-type MOS transistor (M1) determined by the shunt unit (6) and the second DC bias unit (8) does not change, and thus its transconductance g m1 is also unchanged, and because the equivalent transconductance of the first N-type MOS transistor (M1) and the second N-type MOS transistor (M2) in the common source-common gate structure is approximately equal to the transconductance g of the first N-type MOS transistor (M1) m1 , so the inductance value can remain basically unchanged. Further, the first voltage modulation terminal (V tune1 ) does not change the gate-source capacitance of the first N-type MOS transistor (M1), and thus the equivalent parallel capacitance of the active inductor can remain substantially unchanged. Therefore, the operating frequency band determined by the inductance value and the equivalent parallel capacitance value can remain substantially unchanged. Ultimately, the active inductor achieves the characteristic of maintaining a substantially unchanged operating frequency band when the Q peak value is adjusted over a wide range.

[0015] Furthermore, the fourth voltage modulation terminal (V tune4) to change the transconductance g of the first N-type MOS transistor (M1) m1 , achieving a wide range of control over the operating frequency band, but this will also bring about a change in the inductance peak value. To compensate for the change in the inductance peak value, the fifth voltage modulation terminal (V tune5 ) to change the transconductance g of the third N-type MOS transistor (M3) m3 Finally, the active inductor achieves the characteristic that the inductance peak value can remain substantially unchanged when the operating frequency band is adjusted over a wide range.

[0016] Furthermore, the fifth voltage modulation terminal (V tune5 ) to change the transconductance g of the third N-type MOS transistor (M3) m3 , it is possible to achieve a wide range of control of the inductance peak value, but it will also bring about a change in the operating frequency band. To compensate for the change in the operating frequency band, the fourth voltage modulation terminal (V tune4 ) to change the transconductance g of the first N-type MOS transistor (M1) m1 Finally, the active inductor achieves the characteristic that the operating frequency band can remain substantially unchanged when the inductance peak value is adjusted over a wide range.

[0017] Compared with the prior art, the present invention has the following advantages:

[0018] The present invention is composed of eight units, namely, a first transconductance unit (1), a second transconductance unit (2), a third transconductance unit (3), an active feedback resistance unit (4), an active feedback capacitance unit (5), a shunt unit (6), a first DC bias unit (7), and a second DC bias unit (8). Furthermore, the first N-type MOS transistor (M1) of the first transconductance unit (1) and the first voltage modulation terminal (V tune1 ) forms a common source-common gate structure to reduce the equivalent series resistance of the active inductor, thereby increasing the Q value of the active inductor, and by adjusting V tune1 A wide range of Q value adjustment can be achieved, and the DC bias current of the first transconductance unit (1) can be kept constant by the shunt unit (6) and the second DC bias unit (8), so the inductance value is almost unchanged, and the V tune1The equivalent parallel capacitance of the active inductor is not changed, so the operating frequency band can remain basically unchanged; the second transconductance unit (2) forms a first loop with the first transconductance unit (1) on the one hand, and forms a second loop with the third transconductance unit (3) on the other hand, and the first loop and the second loop are connected in parallel to increase the rotation capacitance, thereby enabling the active inductor to obtain a large inductance value; the fourth N-type MOS transistor (M4) and the fifth N-type MOS transistor (M5) of the third transconductance unit (3) form a common source-common gate structure to reduce the equivalent series resistance of the active inductor, thereby increasing the Q value of the active inductor; the active feedback resistance unit (4) can reduce the equivalent series resistance and equivalent parallel conductance of the active inductor, thereby increasing the Q value of the active inductor, and it is configured with a second voltage modulation terminal (V tune2 ), by adjusting V tune2 The Q value can be fine-tuned; the active feedback capacitor unit (5) provides capacitive reactance to reduce the equivalent series resistance of the active inductor, thereby increasing the Q value of the active inductor, and it is configured with a third voltage modulation terminal (V tune3 ), by adjusting V tune3 The Q value can be further fine-tuned by adjusting the fourth voltage modulation terminal (V tune4 ) can change the transconductance g of the first N-type MOS transistor (M1) m1 , thereby achieving wide range adjustment of inductance value and operating frequency band; the first DC bias unit (7) is provided with a fifth voltage modulation terminal (V tune5 ), by adjusting V tune5 The DC bias of the second transconductance unit (2) can be changed to change its transconductance g m3, thereby achieving a wide range of adjustment of the inductance value and the operating frequency band; the second DC bias unit (8) can provide a DC bias for the first transconductance unit (1) and the third transconductance unit (3) at the same time. Based on the configuration of the eight unit circuits for achieving different inductance performance, one or two units can be used to improve and regulate one parameter among the inductance value, Q value and operating frequency band of the active inductor, and the change of the other parameter can be compensated by adjusting the remaining one or two units on the one hand, thereby maintaining the change, and on the other hand, the remaining units can be coordinated to maintain the change, thereby achieving independent adjustment of one parameter among the inductance value, Q value and operating frequency band to the other parameter. This achieves the following six comprehensive inductor properties: In the high-frequency operating range, the inductance value is large and can be adjusted independently of the Q value over a wide range; in the high-frequency operating range, the Q value is high and can be adjusted independently of the inductance value over a wide range; the Q peak value remains essentially unchanged when the operating frequency band is adjusted over a wide range; the operating frequency band remains essentially unchanged when the Q peak value is adjusted over a wide range; the inductance peak value remains essentially unchanged when the operating frequency band is adjusted over a wide range; and the operating frequency band remains essentially unchanged when the inductance peak value is adjusted over a wide range. Thus, a single active inductor circuit achieves these six excellent comprehensive properties in one. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic diagram of the circuit topology of an embodiment of the active inductor. Here, 1 is a first transconductance unit; 2 is a second transconductance unit; 3 is a third transconductance unit; 4 is an active feedback resistor unit; 5 is an active feedback capacitor unit; 6 is a shunt unit; 7 is a first DC bias unit; and 8 is a second DC bias unit.

[0020] Figure 2 The active inductor coordinately regulates the voltage modulation terminal voltage V of the active feedback resistance unit (4), the active feedback capacitance unit (5), the shunt unit (6), and the first DC bias unit (7). tune2 、V tune3 、V tune4 、V tune5 The relationship between the inductance value L and the frequency under different combination biases. Among them, the first combination bias is V tune2 =1.756V, V tune3 =1.612V, V tune4 =0.851V, V tune5 =0.535V; the second combination bias is V tune2 =2.039V, V tune3 =0.692V, V tune4 =0.824V, V tune5 =0.570V; the third combination bias is Vtune2 =2.040V, V tune3 =0.861V, V tune4 =0.954V, V tune5 =0.700V.

[0021] Figure 3 The active inductor coordinately regulates the voltage modulation terminal voltage V of the active feedback resistance unit (4), the active feedback capacitance unit (5), the shunt unit (6), and the first DC bias unit (7). tune2 、V tune3 、V tune4 、V tune5 The relationship between Q value and frequency under different combination biases. Among them, the first combination bias is V tune2 =1.756V, V tune3 =1.612V, V tune4 =0.851V, V tune5 =0.535V; the second combination bias is V tune2 =2.039V, V tune3 =0.692V, V tune4 =0.824V, V tune5 =0.570V; the third combination bias is V tune2 =2.040V, V tune3 =0.861V, V tune4 =0.954V, V tune5 =0.700V.

[0022] Figure 4 The active inductor is used to adjust the voltage modulation terminal voltage V of the first transconductance unit (1). tune1 The relationship between Q value and frequency under three kinds of bias. Among them, the first bias is V tune1 =1.815V; the second bias is V tune1 =1.819V; the third bias is V tune1 =1.835V.

[0023] Figure 5 The active inductor is used to adjust the voltage modulation terminal voltage V of the first transconductance unit (1). tune1 The relationship between the inductance value L and the frequency under three bias conditions. Among them, the first bias is V tune1 =1.815V; the second bias is V tune1 =1.819V; the third bias is V tune1 =1.835V.

[0024] Figure 6The active inductor is used to coordinately adjust the voltage modulation terminal voltage V of the active feedback resistance unit (4), the active feedback capacitance unit (5), and the shunt unit (6). tune2 、V tune3 、V tune4 The relationship between the inductance value L (the frequency point of L=0 is approximately equivalent to the operating frequency band) and frequency under different combined biases. Among them, the first combined bias is V tune2 =2.039V, V tune3 =1.686V, V tune4 =1.40V; the second combination bias is V tune2 =2.080V, V tune3 =0.343V, V tune4 =1.10V; the third combination bias is V tune2 =2.070V, V tune3 =1.645V, V tune4 =0.93V.

[0025] Figure 7 The active inductor is used to coordinately adjust the voltage modulation terminal voltage V of the active feedback resistance unit (4), the active feedback capacitance unit (5), and the shunt unit (6). tune2 、V tune3 、V tune4 The relationship between Q value and frequency under different combination biases. Among them, the first combination bias is V tune2 =2.039V, V tune3 =1.686V, V tune4 =1.40V; the second combination bias is V tune2 =2.080V, V tune3 =0.343V, V tune4 =1.10V; the third combination bias is V tune2 =2.070V, V tune3 =1.645V, V tune4 =0.93V.

[0026] Figure 8 The active inductor is used to adjust the voltage modulation terminal voltage V of the first transconductance unit (1). tune1 The relationship between Q value and frequency under three kinds of bias. Among them, the first bias is V tune1 =1.807V; the second bias is V tune1 =1.810V; the third bias is V tune1 =1.827V.

[0027] Figure 9 The active inductor is used to adjust the voltage modulation terminal voltage V of the first transconductance unit (1). tune1The relationship between the inductance value L (the frequency point of L=0 is approximately equivalent to the operating frequency band) and frequency under three bias conditions. Among them, the first bias is V tune1 =1.807V; the second bias is V tune1 =1.810V; the third bias is V tune1 =1.827V.

[0028] Figure 10 The voltage V of the voltage modulation terminal of the active inductor in the coordinated regulation of the shunt unit (6) and the first DC bias unit (7) is tune4 、V tune5 The relationship between the inductance value L (the frequency point of L=0 is approximately equivalent to the operating frequency band) and frequency under different combined biases. Among them, the first combined bias is V tune4 =1.410V, V tune5 =0.85V; the second combination bias is V tune4 =1.100V, V tune5 =0.83V; the third combination bias is V tune4 =0.692V, V tune5 =0.70V.

[0029] Figure 11 The active inductor coordinately regulates the voltage modulation terminal voltage V of the first DC bias unit (7) and the shunt unit (6). tune5 、V tune4 The relationship between the inductance value L (the frequency point of L=0 is approximately equivalent to the operating frequency band) and frequency under different combined biases. Among them, the first combined bias is V tune5 =0.63V, V tune4 =1.02V; the second combination bias is V tune5 =0.70V, V tune4 =1.10V; the third combination bias is V tune5 =0.78V, V tune4 =1.11V. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention is further described in detail below with reference to the accompanying drawings.

[0031] Figure 1 An embodiment of the novel active inductor is provided, comprising: a first transconductance unit (1), a second transconductance unit (2), a third transconductance unit (3), an active feedback resistance unit (4), an active feedback capacitance unit (5), a shunt unit (6), a first DC bias unit (7), and a second DC bias unit (8).

[0032] In the embodiment of the active inductor, the first transconductance unit (1) of the active inductor includes a first N-type MOS transistor (M1) and a first voltage modulation terminal (V tune1 ) of the second N-type MOS transistor (M2); the second transconductance unit (2) includes a third N-type MOS transistor (M3); the third transconductance unit (3) includes a fifth N-type MOS transistor (M5) and a voltage bias terminal (V B ) of a fourth N-type MOS transistor (M4); an active feedback resistor unit (4) comprising a first passive resistor (R1) and a second voltage modulation terminal (V tune2 ) of the sixth N-type MOS transistor (M6); the active feedback capacitor unit (5) includes a third voltage modulation terminal (V tune3 ) of the seventh N-type MOS transistor (M7); the shunt unit (6) includes a fourth voltage modulation terminal (V tune4 ) of an eighth P-type MOS transistor (M8); a first DC bias unit (7) including a fifth voltage modulation terminal (V tune5 ) of the ninth N-type MOS transistor (M9); the second DC bias unit (8) includes a tenth P-type MOS transistor (M 10 ), the eleventh P-type MOS transistor (M 11 ) and a second passive resistor (R2).

[0033] The specific implementation of the circuit in this embodiment is:

[0034] The input terminal of the active inductor (V in ) is simultaneously connected to the gate of the first N-type MOS transistor (M1), the source of the third N-type MOS transistor (M3), the gate of the fifth N-type MOS transistor (M5) and the drain of the ninth N-type MOS transistor (M9); the source of the first N-type MOS transistor (M1) is connected to the ground terminal (GND), the drain of the first N-type MOS transistor (M1) is simultaneously connected to the source of the second N-type MOS transistor (M2) and the drain of the eighth P-type MOS transistor (M8); the gate of the second N-type MOS transistor (M2) is connected to the first voltage modulation terminal (V tune1 ), the drain of the second N-type MOS transistor (M2) is connected to the drain of the fourth N-type MOS transistor (M4), the drain of the eleventh P-type MOS transistor (M 11 ), the drain of the sixth N-type MOS transistor (M6) and the first end of the first passive resistor (R1); the drain of the third N-type MOS transistor (M3) and the power supply terminal (V DD), the gate of the third N-type MOS transistor (M3) is simultaneously connected to the drain of the sixth N-type MOS transistor (M6), the second end of the first passive resistor (R1) and the gate of the seventh N-type MOS transistor (M7); the gate of the fourth N-type MOS transistor (M4) is connected to the voltage bias terminal (V B ), the source of the fourth N-type MOS transistor (M4) is connected to the drain of the fifth N-type MOS transistor (M5); the source of the fifth N-type MOS transistor (M5) is connected to the ground terminal (GND); the gate of the sixth N-type MOS transistor (M6) is connected to the second voltage modulation terminal (V tune2 ) is connected; the source, drain and substrate of the seventh P-type MOS transistor (M7) are all connected to the third voltage modulation terminal (V tune3 ) is connected; the gate of the eighth P-type MOS transistor (M8) is connected to the fourth voltage modulation terminal (V tune4 ) is connected to the source of the eighth P-type MOS transistor (M8) and the power supply terminal (V DD ) is connected; the source of the ninth N-type MOS transistor (M9) is connected to the ground terminal (GND), the gate of the ninth N-type MOS transistor (M9) is connected to the fifth voltage modulation terminal (V tune5 ) is connected; the tenth P-type MOS transistor (M 10 ) source and the power supply terminal (V DD ) is connected, the tenth P-type MOS transistor (M 10 ) is connected to the gate of the tenth P-type MOS transistor (M 10 ) of the drain, the eleventh P-type MOS transistor (M 11 ) of the gate and the first end of the second passive resistor (R2); an eleventh P-type MOS transistor (M 11 ) source and the power supply terminal (V DD ); a second end of the second passive resistor (R2) is connected to the ground (GND).

[0035] Figure 2 and Figure 3 The active inductor is used to coordinately regulate the voltage modulation terminal voltage V of the active feedback resistance unit (4), the active feedback capacitance unit (5), the shunt unit (6), and the first DC bias unit (7). tune2 、V tune3 、V tune4 、V tune5 The relationship between the inductance value L and the frequency and the relationship between the Q value and the frequency under different combination biases. Among them, the first combination bias is V tune2 =1.756V, V tune3 =1.612V, V tune4 =0.851V, V tune5 =0.535V; the second combination bias is Vtune2 =2.039V, V tune3 =0.692V, V tune4 =0.824V, V tune5 =0.570V; the third combination bias is V tune2 =2.040V, V tune3 =0.861V, V tune4 =0.954V, V tune5 =0.700V. The following uses three different frequency points, 4.2GHz, 4.59GHz, and 4.85GHz, as examples to illustrate the characteristics of the active inductor in the high-frequency operating range, achieving a large inductance value and a wide range of independent adjustment of the inductance value relative to the Q value: ① At a high frequency of 4.2GHz, the inductance value L can be adjusted from 11.8nH to 23.0nH (the inductance value L is always greater than 10nH), with an adjustment rate of up to 94.9%. The corresponding Q value is adjusted from 115.3 to 121.1, with a change rate of only 5.0%. ② At a high frequency of 4.59GHz, the inductance value L can be adjusted from 13.2nH to 26.7nH (the inductance value L is always greater than 10nH), with an adjustment rate of up to 102.3%. The corresponding Q value is adjusted from 1024.7 to 1028.1, with a change rate of only 0.02%. ③ At a high frequency of 5.0GHz, the inductance value L can be adjusted from 15.0nH to 32.4nH (the inductance value L is always greater than 10nH), with an adjustment rate of up to 116.0%. The corresponding Q value is adjusted from 89.5 to 98.8, with a change rate of only 10.4%. In summary, the active inductor achieves the characteristics of large inductance values ​​in the high-frequency operating range, and the inductance value can be adjusted independently of the Q value over a wide range.

[0036] Figure 4 and Figure 5 The active inductor is used to adjust the voltage modulation terminal voltage V of the first transconductance unit (1). tune1 The relationship between Q value and frequency under three bias conditions and the relationship between inductance value L and frequency. Among them, the first bias is V tune1 =1.815V; the second bias is V tune1 =1.819V; the third bias is V tune1=1.835V. The following uses three different frequency points, 4.35GHz, 4.59GHz, and 4.85GHz, as examples to illustrate that the active inductor achieves a high Q value in the high-frequency operating range, and the Q value can be independently adjusted over a wide range relative to the inductance value L: ① At a high frequency of 4.35GHz, the Q value can be adjusted from 190.4 to 306.1 (all Q values ​​are greater than 100), with an adjustment rate of up to 60.8%. The corresponding inductance value L is adjusted from 12.272nH to 12.274nH, with a change rate of only 0.02%. ② At a high frequency of 4.59GHz, the Q value can be adjusted from 422.0 to 3669.6 (all Q values ​​are greater than 100), with an adjustment rate of up to 769.6%. The corresponding inductance value L is adjusted from 13.164nH to 13.166nH, with a change rate of only 0.02%. ③ At a high frequency of 4.85GHz, the Q value can be adjusted from 164.9 to 260.1 (all Q values ​​are greater than 100), with an adjustment rate of up to 57.7%. The corresponding inductance value L is adjusted from 14.288nH to 14.294nH, with a change rate of only 0.04%. In summary, the active inductor achieves a high Q value in the high-frequency operating range and the Q value can be adjusted independently of the inductance value over a wide range.

[0037] Figure 6 and Figure 7 The active inductor is used to coordinately adjust the voltage modulation terminal voltage V of the active feedback resistance unit (4), the active feedback capacitance unit (5), and the shunt unit (6). tune2 、V tune3 、V tune4 The relationship between the inductance value L and the frequency and the relationship between the Q value and the frequency under different combination biases. Among them, the first combination bias is V tune2 =2.039V, V tune3 =1.686V, V tune4 =1.40V; the second combination bias is V tune2 =2.080V, V tune3 =0.343V, V tune4 =1.10V; the third combination bias is V tune2 =2.070V, V tune3 =1.645V, V tune4 =0.93V. Figure 6 It can be seen that the operating frequency bands of the active inductor are 7.05 GHz, 7.41 GHz and 8.18 GHz (the frequency point of L=0 is approximately equivalent to the operating frequency band), and the change rate of the operating frequency band is 16.0%. Figure 7As can be seen, the Q peak of the active inductor varies only between 1036.0, 1034.9, and 1036.8, with a very small change of only 0.2%. Therefore, the change rate of the active inductor's operating frequency band is 80 times that of the Q peak. In summary, the active inductor achieves the characteristic of maintaining a substantially constant Q peak value when the operating frequency band is adjusted over a wide range.

[0038] Figure 8 and Figure 9 The active inductor is used to adjust the voltage modulation terminal voltage V of the first transconductance unit (1). tune1 The relationship between Q value and frequency under three bias conditions and the relationship between inductance value L and frequency. Among them, the first bias is V tune1 =1.807V; the second bias is V tune1 =1.810V; the third bias is V tune1 =1.827V. Figure 8 It can be seen that the peak Q values ​​of the active inductor are 455.5, 1607.3, and 2671.5, respectively, and the change rate of the peak Q value is as high as 486.5%. Figure 9 It can be seen that the operating frequency band of the active inductor varies only between 7.414 GHz, 7.409 GHz, and 7.408 GHz (the frequency point where L = 0 is approximately equivalent to the operating frequency band), with minimal variation of only 0.08%. In summary, the active inductor achieves the characteristic of maintaining a substantially constant operating frequency band while adjusting the Q peak value over a wide range.

[0039] Figure 10 The voltage V of the voltage modulation terminal of the active inductor in the coordinated regulation of the shunt unit (6) and the first DC bias unit (7) is tune4 、V tune5 The relationship between the inductance value L and the frequency under the three combined biases. Among them, the first combined bias is V tune4 =1.410V, V tune5 =0.85V; the second combination bias is V tune4 =1.100V, V tune5 =0.83V; the third combination bias is V tune4 =0.692V, V tune5 =0.70V. Figure 10It can be seen that the operating frequency bands of the active inductor are 6.55GHz, 7.32GHz, and 8.17GHz (the frequency point of L=0 is approximately equivalent to the operating frequency band), and the rate of change of the operating frequency band is 24.7%. The corresponding peak inductances of the active inductor are 20.244nH, 20.236nH, and 20.234nH, respectively, and the rate of change of the peak inductance is only 0.05%. Therefore, the rate of change of the active inductor operating frequency band is 494 times the rate of change of the peak inductance. In summary, the active inductor achieves the characteristic that the peak inductance can remain basically unchanged when the operating frequency band is adjusted over a wide range.

[0040] Figure 11 The active inductor coordinately regulates the voltage modulation terminal voltage V of the first DC bias unit (7) and the shunt unit (6). tune5 、V tune4 The relationship between the inductance value L and the frequency under the three combined biases. Among them, the first combined bias is V tune5 =0.63V, V tune4 =1.02V; the second combination bias is V tune5 =0.70V, V tune4 =1.10V; the third combination bias is V tune5 =0.78V, V tune4 =1.11V. Figure 11 It can be seen that the peak inductance values ​​of the active inductor are 20.9nH, 33.4nH, and 50.2nH, respectively, and the rate of change of the peak inductance values ​​is as high as 140.2%. The corresponding operating frequency bands of the active inductor are 7.42GHz, 7.41GHz, and 7.36GHz (the frequency point L=0 is approximately equivalent to the operating frequency band), and the rate of change of the operating frequency band is only 0.8%. Therefore, the rate of change of the peak inductance value of the active inductor is 175 times that of the operating frequency band. In summary, the active inductor achieves the characteristic that the operating frequency band can remain essentially unchanged when the peak inductance value is adjusted over a wide range.

[0041] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A voltage-tuned active inductor, characterized in that: include: A first transconductance unit (1), a second transconductance unit (2), a third transconductance unit (3), an active feedback resistance unit (4), an active feedback capacitance unit (5), a shunt unit (6), a first DC bias unit (7), and a second DC bias unit (8); The first transconductance unit (1) includes a first N-type MOS transistor (M1) and a first voltage modulation terminal (V tune1 ) of the second N-type MOS transistor (M2); the second transconductance unit (2) includes a third N-type MOS transistor (M3); the third transconductance unit (3) includes a fifth N-type MOS transistor (M5) and a voltage bias terminal (V B ) of a fourth N-type MOS transistor (M4); an active feedback resistor unit (4) comprising a first passive resistor (R1) and a second voltage modulation terminal (V tune2 ) of the sixth N-type MOS transistor (M6); the active feedback capacitor unit (5) includes a third voltage modulation terminal (V tune3 ) of the seventh N-type MOS transistor (M7); the shunt unit (6) includes a fourth voltage modulation terminal (V tune4 ) of an eighth P-type MOS transistor (M8); a first DC bias unit (7) including a fifth voltage modulation terminal (V tune5 ) of the ninth N-type MOS transistor (M9); the second DC bias unit (8) includes a tenth P-type MOS transistor (M 10 ), the eleventh P-type MOS transistor (M 11 ) and a second passive resistor (R2); The input terminal of the active inductor (V in ) is simultaneously connected to the gate of the first N-type MOS transistor (M1), the source of the third N-type MOS transistor (M3), the gate of the fifth N-type MOS transistor (M5) and the drain of the ninth N-type MOS transistor (M9); the source of the first N-type MOS transistor (M1) is connected to the ground terminal (GND), the drain of the first N-type MOS transistor (M1) is simultaneously connected to the source of the second N-type MOS transistor (M2) and the drain of the eighth P-type MOS transistor (M8); the gate of the second N-type MOS transistor (M2) is connected to the first voltage modulation terminal (V tune1 ), the drain of the second N-type MOS transistor (M2) is connected to the drain of the fourth N-type MOS transistor (M4), the drain of the eleventh P-type MOS transistor (M 11 ), the drain of the sixth N-type MOS transistor (M6) and the first end of the first passive resistor (R1); the drain of the third N-type MOS transistor (M3) and the power supply terminal (V DD ), the gate of the third N-type MOS transistor (M3) is simultaneously connected to the drain of the sixth N-type MOS transistor (M6), the second end of the first passive resistor (R1) and the gate of the seventh N-type MOS transistor (M7); the gate of the fourth N-type MOS transistor (M4) is connected to the voltage bias terminal (V B ), the source of the fourth N-type MOS transistor (M4) is connected to the drain of the fifth N-type MOS transistor (M5); The source of the fifth N-type MOS transistor (M5) is connected to the ground terminal (GND); the gate of the sixth N-type MOS transistor (M6) is connected to the second voltage modulation terminal (V tune2 ) is connected; the source, drain and substrate of the seventh P-type MOS transistor (M7) are all connected to the third voltage modulation terminal (V tune3 ) is connected; the gate of the eighth P-type MOS transistor (M8) is connected to the fourth voltage modulation terminal (V tune4 ) is connected to the source of the eighth P-type MOS transistor (M8) and the power supply terminal (V DD ) is connected; the source of the ninth N-type MOS transistor (M9) is connected to the ground terminal (GND), the gate of the ninth N-type MOS transistor (M9) is connected to the fifth voltage modulation terminal (V tune5 ) is connected; the tenth P-type MOS transistor (M 10 ) source and the power supply terminal (V DD ) is connected, the tenth P-type MOS transistor (M 10 ) is connected to the gate of the tenth P-type MOS transistor (M 10 ) of the drain, the eleventh P-type MOS transistor (M 11 ) of the gate and the first end of the second passive resistor (R2); an eleventh P-type MOS transistor (M 11 ) source and the power supply terminal (V DD ); a second end of the second passive resistor (R2) is connected to the ground (GND).

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