Semiconductor substrate support with internal channel

Abstract

An exemplary substrate support assembly may include an electrostatic chuck body defining a substrate support surface. The support assembly may include a support rod coupled to the electrostatic chuck body. The support assembly may include an electrode embedded within the electrostatic chuck body proximate to the substrate support surface. The support assembly may include a ground electrode embedded within the electrostatic chuck body. The support assembly may include one or more channels formed within the electrostatic chuck body between the electrode and the ground electrode.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit of and priority to U.S. Patent Application No. 16 / 844,134, filed on April 9, 2020, entitled “SEMICONDUCTOR SUBSTRATE SUPPORTWITH INTERNAL CHANNELS,” which is incorporated herein by reference in its entirety. Technical Field

[0003] The present technology relates to components and equipment used in semiconductor manufacturing. More particularly, the present technology relates to substrate support assemblies and other semiconductor processing equipment. Background Art

[0004] Integrated circuits are made possible by processes that create complex, patterned layers of material on substrate surfaces. Producing patterned material on substrates requires controlled methods for forming and removing the material. Substrate supports can play a crucial role in semiconductor processing, with various aspects related to providing temperature control for the substrate within the processing chamber, including embedded electrodes used for plasma formation. Coordinating the many interrelated aspects of semiconductor substrate supports can involve competing characteristics and materials. As manufacturing results become more sensitive to processing conditions, various aspects of the substrate support can significantly impact numerous process characteristics.

[0005] Therefore, there exists a need for improved systems and methods that can be used to produce high-quality devices and structures. These and other needs are addressed by the present technology. Summary of the Invention

[0006] An exemplary substrate support assembly may include an electrostatic chuck body defining a substrate support surface. The support assembly may include a support rod coupled to the electrostatic chuck body. The support assembly may include an electrode embedded within the electrostatic chuck body proximate to the substrate support surface. The support assembly may include a ground electrode embedded within the electrostatic chuck body. The support assembly may include one or more channels formed within the electrostatic chuck body between the electrode and the ground electrode.

[0007] In some embodiments, the electrostatic chuck body may be a monolithic body of ceramic material incorporating the electrode, the ground electrode, and each of the one or more channels. The assembly may include a heater embedded within the electrostatic chuck body between the electrode and the ground electrode. The one or more channels may include a plurality of channels. A first channel of the plurality of channels may be formed within the electrostatic chuck body between the electrode and the heater. A second channel of the plurality of channels may be formed within the electrostatic chuck body between the ground electrode and the heater. A third channel of the plurality of channels may be formed within the electrostatic chuck body between the electrode and the heater, vertically offset from the first channel of the plurality of channels within the electrostatic chuck body. The first channel may include a set of first interconnected channels. The channel may include a plurality of first annular channels distributed across a first plane of the electrostatic chuck body. The channel may include a plurality of first channel interconnects radially distributed between each of the plurality of first annular channels.

[0008] The third channel may include a set of second interconnected channels. The channel may include a plurality of second annular channels distributed across a second plane of the electrostatic chuck body. The second plane of the electrostatic chuck body may be vertically offset from the first plane of the electrostatic chuck body. The channel may include a plurality of second channel interconnects radially distributed between each of the plurality of second annular channels. The plurality of second annular channels may be radially offset from the plurality of first annular channels. The plurality of second channel interconnects may be azimuthally offset from the plurality of first channel interconnects. The second channel may include a set of third interconnected channels. The channel may include a plurality of third annular channels distributed across a third plane of the electrostatic chuck body. The third plane of the electrostatic chuck body may be vertically offset from the first plane of the electrostatic chuck body and the second plane of the electrostatic chuck body. The channel may include a plurality of third channel interconnects radially distributed between each of the plurality of third annular channels. Each channel of the plurality of third annular channels may be vertically aligned with an associated channel of the plurality of first annular channels. The plurality of second channel interconnects may be azimuthally aligned with the plurality of first channel interconnects. The assembly may include a fourth channel formed within the third plane of the electrostatic chuck body. The channel may be configured to house a thermocouple extending through a support rod coupled to the electrostatic chuck body.

[0009] Some embodiments of the present technology may encompass a substrate support assembly. The assembly may include an electrostatic chuck body defining a substrate support surface. The assembly may include a support rod coupled to the electrostatic chuck body. The assembly may include an electrode embedded within the electrostatic chuck body proximate the substrate support surface. The assembly may include a ground electrode embedded within the electrostatic chuck body. The assembly may include a first set of interconnect channels formed within the electrostatic chuck body between the electrode and the ground electrode. The assembly may include a second set of interconnect channels formed within the electrostatic chuck body between the electrode and the ground electrode. The second set of interconnect channels may be radially offset from the first set of interconnect channels. The first set of interconnect channels may be maintained at least 5 mm from a radial edge of the electrostatic chuck body. The first set of interconnect channels and the second set of interconnect channels may be maintained at atmospheric pressure.

[0010] In some embodiments, an effective capacitance within the electrostatic chuck body between the electrode and the ground electrode can be less than or approximately 1,000 pF. The electrostatic chuck body can be characterized by a volume percentage of air greater than or approximately 10%. The assembly can include a heater positioned between the electrode and the ground electrode. The assembly can also include a third set of interconnecting channels formed within the electrostatic chuck body between the heater and the ground electrode.

[0011] Some embodiments of the present technology may encompass a substrate support assembly. The assembly may include an electrostatic chuck body defining a substrate support surface. The assembly may include a support rod coupled to the electrostatic chuck body. The assembly may include an electrode embedded within the electrostatic chuck body proximate the substrate support surface. The assembly may include a ground electrode embedded within the electrostatic chuck body. The assembly may include a heater embedded within the electrostatic chuck body between the electrode and the ground electrode. The assembly may include a first set of interconnect channels formed within the electrostatic chuck body between the electrode and the heater. The assembly may include a second set of interconnect channels formed within the electrostatic chuck body between the first set of interconnect channels and the heater. The assembly may include a third set of interconnect channels formed within the electrostatic chuck body between the heater and the ground electrode.

[0012] Such techniques can provide numerous benefits over conventional systems and techniques. For example, incorporating channels into the substrate support can improve the effective capacitance between embedded electrodes. Additionally, the coordination of channels can allow for a reduction in the distance between the hot and ground electrodes while limiting the effective capacitance. These and other embodiments, as well as their many advantages and features, are described in greater detail in conjunction with the following description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the accompanying drawings.

[0014] Figure 1 A schematic cross-sectional view of an exemplary plasma system is shown, in accordance with some embodiments of the present technology.

[0015] Figure 2 A schematic partial cross-sectional view of an exemplary substrate support assembly is shown in accordance with some embodiments of the present technology.

[0016] Figure 3 A schematic plan view of a portion of an exemplary substrate support assembly is shown in accordance with some embodiments of the present technology.

[0017] Figure 4 A schematic plan view of a portion of an exemplary substrate support assembly is shown in accordance with some embodiments of the present technology.

[0018] Figure 5 A schematic plan view of a portion of an exemplary substrate support assembly is shown in accordance with some embodiments of the present technology.

[0019] Figure 6 A schematic partial cross-sectional view of an exemplary substrate support assembly is shown in accordance with some embodiments of the present technology.

[0020] Figure 7 A schematic plan view of a portion of an exemplary electrostatic chuck body is shown in accordance with some embodiments of the present technology.

[0021] Some of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustration purposes only and should not be considered to be drawn to scale unless specifically noted as such. Furthermore, the drawings are provided as schematic diagrams to aid understanding and may not include all aspects or information compared to realistic representations, and may include material that is exaggerated for illustrative purposes.

[0022] In the drawings, similar components and / or features may have the same reference number. In addition, various components of the same type may be distinguished by following the reference number with a letter that distinguishes between the similar components. If only the first reference number is used in the specification, the description applies to any of the similar components having the same first reference number, regardless of the letter. DETAILED DESCRIPTION

[0023] Plasma-enhanced deposition processes can excite one or more component precursors to promote film formation on a substrate. An electrostatic chuck can be used to clamp the substrate to maintain planarity across the substrate and contact between the substrate and a substrate support. The substrate support can perform a variety of functions during plasma processing. For example, in addition to clamping the wafer against the substrate support, the substrate support can include one or more embedded heaters for controlling the temperature of the substrate during processing. Furthermore, the substrate support can serve as one of the electrodes for a capacitively coupled plasma generated within a substrate processing region of a semiconductor processing chamber.

[0024] During plasma processing, an electrode within the substrate support and the opposing faceplate or showerhead can function as two opposing capacitively coupled electrodes. This generates a plasma between the components, which ionizes the delivered precursors and produces reactants that deposit material on the substrate. While in some embodiments, the chamber body can be grounded and used as a ground path, this ground path can present challenges during processing. The ground path from the hot electrode within the susceptor to the chamber wall can be asymmetrical with respect to the gap region surrounding and beneath the substrate support, resulting in areas of higher electric field distribution that can ignite stray plasma in the area surrounding the substrate support. To mitigate the issue of asymmetrical grounding, many substrate supports also include a ground electrode within the substrate support itself. The ground electrode within the substrate support can be separate from the plasma generation electrode within the platen portion of the substrate support or the electrostatic chuck body. Because many substrate supports are made of ceramic or dielectric materials, while electrical losses from the hot electrode to the ground electrode through the dielectric body may occur, short circuits between these electrodes are unlikely.

[0025] While improving the symmetry of the ground path and incorporating a ground electrode into the electrostatic chuck body can reduce stray plasma issues, many conventional techniques must accept the electrical losses incurred by incorporating the ground electrode into the substrate support. One solution to reducing these losses may include increasing the thickness of the dielectric material, and therefore increasing the corresponding distance between the hot and ground electrodes, which can reduce capacitive losses between these two components. However, due to space constraints within the processing chamber, many substrate supports are constrained in the vertical direction, which can limit the ability to sufficiently increase the thickness of the chuck body. The present technique overcomes these issues by manipulating the electrical properties of the ceramic of the ground plate. By including a certain amount of air or fluid space within the substrate support, the effective capacitance between the hot and ground electrodes can be reduced while maintaining a specified thickness for the substrate support.

[0026] Although the remainder of the disclosure will routinely identify specific deposition processes and chambers utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition, etching, and cleaning chambers and processes that may occur in the described chambers. Therefore, the present technology should not be considered limited to use with only these specific deposition processes or chambers. Before describing additional variations and adjustments to this system according to embodiments of the present technology, the present disclosure will discuss one possible chamber that may include a substrate support assembly according to embodiments of the present technology.

[0027] Figure 1A cross-sectional view of an exemplary processing chamber 100 is shown in accordance with some embodiments of the present technology. The accompanying figures may illustrate an overview of a system incorporating one or more aspects of the present technology, and / or the system may be specifically configured to perform one or more operations in accordance with embodiments of the present technology. Additional details of the chamber 100 or the methods performed therein may be further described below. In accordance with some embodiments of the present technology, the chamber 100 may be used to form a film layer, although it should be understood that the methods may be similarly performed in any chamber in which film formation may occur. The processing chamber 100 may include a chamber body 102, a substrate support 104 disposed within the chamber body 102, and a lid assembly 106 coupled to the chamber body 102 and enclosing the substrate support 104 in a processing volume 120. A substrate 103 may be provided to the processing volume 120 through an opening 126, which may typically be sealed using a slit valve or door for processing. During processing, the substrate 103 may rest on a surface 105 of the substrate support. As indicated by arrow 145, the substrate support 104 may be rotated along an axis 147, where the shaft 144 of the substrate support 104 may be located. Alternatively, the substrate support 104 may be lifted for rotation as needed during the deposition process.

[0028] A plasma profile modulator 111 may be disposed in the processing chamber 100 to control the plasma distribution across a substrate 103 disposed on a substrate support 104. The plasma profile modulator 111 may include a first electrode 108, which may be disposed adjacent to the chamber body 102 and separate the chamber body 102 from other components of the lid assembly 106. The first electrode 108 may be part of the lid assembly 106 or may be a separate sidewall electrode. The first electrode 108 may be an annular or ring-shaped member and may be a ring-shaped electrode. The first electrode 108 may be a continuous ring around the circumference of the processing chamber 100, which circumscribes the processing volume 120, or may be discontinuous at selected locations, if desired. The first electrode 108 may also be a perforated electrode, such as a perforated ring or mesh electrode, or may be a plate-shaped electrode, such as, for example, a secondary gas distributor.

[0029] One or more isolators 110a, 110b, which may be a dielectric material such as a ceramic or a metal oxide, e.g., aluminum oxide and / or aluminum nitride, may contact the first electrode 108 and electrically and thermally isolate the first electrode 108 from a gas distributor 112 and the chamber body 102. The gas distributor 112 may define an aperture 118 for distributing process precursors into the processing volume 120. The gas distributor 112 may be coupled to a first electrical power source 142, such as an RF generator, an RF power source, a DC power source, a pulsed DC power source, a pulsed RF power source, or any other power source that may be coupled to the processing chamber. In some embodiments, the first electrical power source 142 may be an RF power source.

[0030] The gas distributor 112 can be a conductive gas distributor or a non-conductive gas distributor. The gas distributor 112 can also be formed of conductive and non-conductive components. For example, the body of the gas distributor 112 can be conductive, while the panel of the gas distributor 112 can be non-conductive. In some embodiments, the gas distributor 112 can be (such as by Figure 1 A first electrical power source 142 (shown) is powered, or the gas distributor 112 may be coupled to ground.

[0031] The first electrode 108 can be coupled to a first tuning circuit 128, which can control the ground path of the processing chamber 100. The first tuning circuit 128 can include a first electronic sensor 130 and a first electronic controller 134. The first electronic controller 134 can be or include a variable capacitor or other circuit element. The first tuning circuit 128 can be or include one or more inductors 132. The first tuning circuit 128 can be any circuit that achieves a variable or controllable impedance under the plasma conditions present in the processing volume 120 during processing. In some embodiments shown, the first tuning circuit 128 can include a first circuit branch and a second circuit branch coupled in parallel between ground and the first electronic sensor 130. The first circuit branch can include a first inductor 132A. The second circuit branch can include a second inductor 132B coupled in series with the first electronic controller 134. The second inductor 132B can be disposed between the first electronic controller 134 and a node connecting both the first circuit branch and the second circuit branch to the first electronic sensor 130. The first electronic sensor 130 may be a voltage or current sensor and may be coupled to a first electronic controller 134 , which may provide a degree of closed-loop control of the plasma conditions within the processing volume 120 .

[0032] A second electrode 122 can be coupled to the substrate support 104. The second electrode 122 can be embedded within the substrate support 104 or coupled to a surface of the substrate support 104. The second electrode 122 can be a plate, a perforated plate, a mesh, a wire mesh, or any other distributed arrangement of conductive elements. The second electrode 122 can be a tuning electrode and can be coupled to a second tuning circuit 136 via a conduit 146, such as a cable having a selected resistance (e.g., 50 ohms) disposed within the shaft 144 of the substrate support 104. The second tuning circuit 136 can have a second electronic sensor 138 and a second electronic controller 140, which can be a second variable capacitor. The second electronic sensor 138 can be a voltage or current sensor and can be coupled to the second electronic controller 140 to provide further control of the plasma conditions in the processing volume 120.

[0033] A third electrode 124, which may be a bias electrode and / or an electrostatic chuck electrode, may be coupled to the substrate support 104. The third electrode may be coupled to a second power source 150 via a filter 148, which may be an impedance matching circuit. The second power source 150 may be a DC power source, a pulsed DC power source, an RF bias power source, a pulsed RF power source, or a bias power source, or a combination of these or other power sources. In some embodiments, the second power source 150 may be an RF bias power source.

[0034] Figure 1 The lid assembly 106 and substrate support 104 can be used with any processing chamber used for plasma or thermal processing. In operation, the processing chamber 100 can provide real-time control of plasma conditions in the processing volume 120. The substrate 103 can be placed on the substrate support 104, and process gases can flow through the lid assembly 106 using the inlet 114 according to any desired flow schedule. The gases can exit the processing chamber 100 through the outlet 152. Electrical power can be coupled to the gas distributor 112 to establish a plasma in the processing volume 120. In some embodiments, the substrate can be subjected to an electrical bias using the third electrode 124.

[0035] Once the plasma in the processing volume 120 is energized, a potential difference can be established between the plasma and the first electrode 108. A potential difference can also be established between the plasma and the second electrode 122. Electronic controllers 134, 140 can then be used to adjust the flow properties of the ground paths represented by the two tuning circuits 128 and 136. Set points can be transmitted to the first tuning circuit 128 and the second tuning circuit 136 to provide independent control of the deposition rate and plasma density uniformity from center to edge. In embodiments where both electronic controllers are variable capacitors, the electronic sensors can adjust the variable capacitors to independently maximize the deposition rate and minimize thickness non-uniformity.

[0036] Each of the tuning circuits 128 and 136 can have a variable impedance that can be adjusted using the corresponding electronic controller 134 or 140. Where the electronic controllers 134 and 140 are variable capacitors, the capacitance range of each variable capacitor and the inductance of the first and second inductors 132A and 132B can be selected to provide an impedance range. This range can depend on the frequency and voltage characteristics of the plasma, and can have a minimum value within the capacitance range of each variable capacitor. Thus, when the capacitance of the first electronic controller 134 is at its minimum or maximum, the impedance of the first tuning circuit 128 can be high, resulting in a plasma shape with minimal airborne or lateral coverage above the substrate support. When the capacitance of the first electronic controller 134 approaches a value that minimizes the impedance of the first tuning circuit 128, the airborne coverage of the plasma can increase to a maximum, effectively covering the entire working area of ​​the substrate support 104. As the capacitance of the first electronic controller 134 deviates from the minimum impedance setting, the plasma shape can shrink from the chamber walls, and airborne coverage of the substrate support can decrease. The second electronic controller 140 may have a similar effect, increasing and decreasing the aerial coverage of the plasma above the substrate support as the capacitance of the second electronic controller 140 may vary.

[0037] The electronic sensors 130, 138 can be used to tune the respective circuits 128, 136 in a closed loop. Depending on the type of sensor used, a set point for current or voltage can be installed in each sensor, and the sensors can be equipped with control software that determines adjustments to each respective electronic controller 134, 140 to minimize deviations from the set point. Thus, the plasma shape can be selected and dynamically controlled during processing. It should be understood that although the previous discussion is based on electronic controllers 134, 140 that can be variable capacitors, any electronic component with adjustable characteristics can be used to provide adjustable impedance for the tuning circuits 128, 136.

[0038] Figure 2A schematic, partial, cross-sectional view of an exemplary substrate support 200 according to some embodiments of the present technology is shown. For example, the substrate support 200 may illustrate a portion of the substrate support 104 described above, which may include any aspects of such a support assembly, and may illustrate additional details of such a support assembly. The substrate support 200 may illustrate a simplified cross-section of a support structure, which may include many other components or aspects as previously described or as may be included in a substrate support. It should be understood that the substrate support 200 is not shown to any particular scale and is included merely to illustrate various aspects of the present technology. The substrate support 200 may be included within a chamber as previously described, as well as within any other processing chamber that may define a substrate processing region (such as having one or more walls of a chamber body) or other components positioned within the processing chamber. The substrate support 200 may illustrate a partial view of components and couplings within an exemplary semiconductor processing system and may not include all components, such as the previously described chamber components and features, which are understood to be incorporated in some embodiments associated with or having the substrate support 200.

[0039] The substrate support 200 may include multiple components that are joined, welded, bonded, sintered, formed, or otherwise coupled to one another. The substrate support assembly may include an electrostatic chuck body 205, which may include one or more components embedded or disposed within the body. In some embodiments, components incorporated within the top disk may not be exposed to process materials and may be completely contained within the chuck body 205. The electrostatic chuck body 205 may define a substrate supporting surface 207 and may be characterized by a thickness and a length or diameter, depending on the particular geometry of the chuck body. In some embodiments, the chuck body may be elliptical and may be characterized by one or more radial dimensions extending from a central axis through the chuck body. It should be understood that the top disk may be of any geometry, and when radial dimensions are discussed, they may define any length from the center of the chuck body.

[0040] The electrostatic chuck body 205 can be coupled to a rod 210, which can support the chuck body and include channels for delivering and receiving electrical wires and / or fluid lines that can be coupled to internal components of the chuck body 205. The chuck body 205 can include associated channels or components for use as an electrostatic chuck, although in some embodiments, the assembly can function as or include components for a vacuum chuck or any other type of clamping system. The rod 210 can be coupled to the chuck body on a second surface of the chuck body, opposite the substrate support surface. The electrostatic chuck body 205 can include an electrode 215 embedded within the chuck body proximate the substrate support surface. The electrode 215 can be electrically coupled to a power source for use solely as a plasma generation electrode, or can be electrically coupled to another component, such as a faceplate or other chamber component, to generate a capacitively coupled plasma above the wafer. The power source can be configured to provide energy or voltage to the conductive chuck electrode 215, which, in some embodiments, can also function as a chuck electrode.

[0041] In some embodiments, the electrostatic chuck body 205 and / or rod 210 may be made of an insulating or dielectric material. For example, oxides, nitrides, carbides, and other materials may be used to form the components, as well as a range of polymeric materials, including polystyrene or other materials, including cross-linked materials. Exemplary materials may include ceramics, including aluminum oxide, aluminum nitride, silicon carbide, tungsten carbide, and any other metal or transition metal oxide, nitride, carbide, boride, or titanate, as well as combinations of these materials with other insulating or dielectric materials. Different grades of ceramic materials may be used to provide composite materials configured to operate within a specific temperature range, and thus, in some embodiments, different ceramic grades of similar materials may be used for the top disk and rod. In some embodiments, dopants may be incorporated to adjust the electrical or other properties of the components. Exemplary dopant materials may include yttrium, magnesium, silicon, iron, calcium, chromium, sodium, nickel, copper, zinc, or any number of other elements known to be incorporated into ceramic or dielectric materials.

[0042] The chuck body may include a ground electrode 220, which may be positioned proximate to the back side of the chuck body, such as proximate to the surface to which the rod is coupled. Additionally, a heater 225 may be incorporated into the chuck body, such as between the electrode 215 and the ground electrode 220. Electrical couplings for the heater and electrode may extend through the rod and substrate support to electrically couple the component to a power source.

[0043] In some embodiments, the electrostatic chuck body may further include or define one or more channels within the electrostatic chuck body between the electrode 215 and the ground electrode 220. As previously explained, electrical losses may occur from the electrode 215 through the electrostatic chuck body 205 to the ground electrode 220. In some embodiments, the thickness of the chuck body may be fixed, and therefore, reducing electrical losses by increasing the distance between the electrodes may not be feasible. Therefore, in some embodiments, the electrical properties of the chuck body may be altered by incorporating a gap, which may include air or some other fluid or gas pumped into the channel.

[0044] In addition to increasing the thickness of the chuck body to further separate the electrodes, increasing gas cavities or porosity can reduce the effective capacitance between the two electrodes within the chuck body. However, in order to effectively reduce the capacitance, a sufficient amount of air or fluid can be included. However, by increasing the porosity of the entire substrate support, leakage may occur. For example, the substrate support may be included in a processing chamber that may operate under vacuum during semiconductor processing. The channels formed in the rods and top disc for conveying fluids or electrical connections can be maintained under atmospheric conditions. When the chuck body has sufficient porosity, the pressure difference between the atmospheric components and the vacuum conditions within the chamber may cause air to leak through the porous body into the processing chamber. Therefore, simply increasing the porosity of the disc body may not allow the incorporation of a sufficient amount of air to effectively reduce the capacitance without compromising the operation of the substrate support related to processing.

[0045] Therefore, the present technology may include a plurality of channels formed within the electrostatic chuck body to increase the volume percentage of air or other fluid within the disk between the two electrodes, which can reduce the effective capacitance between the electrodes. The channels can be distributed to limit structural impacts on the substrate support. For example, because the electrostatic chuck body can be formed through a high-temperature, high-pressure sintering process and then operated under potentially high vacuum conditions, forming a single volume within the electrostatic chuck body may cause the structure to collapse during formation or operation. Additionally, heat transfer through the electrostatic chuck body can be significantly impeded by such a volume, which can affect the uniformity of heating the substrate. Therefore, some embodiments of the present technology may include one or more channels within the substrate support, the channels distributed to limit mechanical and thermal impacts on the operation of the substrate support while improving the electrical characteristics of the substrate support.

[0046] As shown, the electrostatic chuck body can be a monolithic body of ceramic material that incorporates each of the hot electrode, ground electrode, heater, and channels. As will be described further below, the monolith can be formed by sintering or otherwise joining multiple plates (such as a green body) that define one or more channels. In some embodiments, the one or more channels can be multiple channels. For example, each channel can be accessible by a rod, which allows fluid access and prevents the channel from becoming a sealed volume within the electrostatic chuck body. A first channel 230 can be formed within the electrostatic chuck body 205 between the electrode 215 and the heater 225. A second channel 235 can be formed within the electrostatic chuck body between the electrode 215 and the heater 225, and can be formed within the chuck body between the first channel 230 and the heater 225. As shown, the second channel can be perpendicularly offset from the first channel within the electrostatic chuck body.

[0047] In some embodiments, a third channel 240 may be formed within the electrostatic chuck body between the heater 225 and the ground electrode 220. As will be further explained below, each channel may include or be comprised of a set of interconnected channels that may all be fluidically coupled to create a single distributed channel. In embodiments, some or all of the channels may be included in the substrate support assembly, although not all of the channels may be included. For example, in some embodiments, only one of the channels may be included, or any two of the channels may be included. In one non-limiting embodiment, only the first and third channels may be included, in which case, for example, the third channel may constitute the second channel. Embodiments of the present technology similarly contemplate any number of inclusions or exclusions.

[0048] Each of the included channels can be distributed along a respective plane through the electrostatic chuck body. For example, a first channel can extend through the electrostatic chuck body along a first plane, a second channel can extend through the electrostatic chuck body along a second plane, and a third channel can extend through the electrostatic chuck body along a third plane. The channels can be distributed along the planes to maintain structural support and adequate heat transfer through the layers of the substrate support. For example, when both a first channel 230 and a second channel 235 are included, the channels can be offset from one another. As shown, in some embodiments, the second channel 235 can be offset from a relevant portion of the first channel 230.

[0049] The third channel 240 is shown aligned with the first channel 230, although in other embodiments, the third channel 240 can be aligned with the second channel 235, or can be offset from both the first channel 230 and the second channel 235. Aligned with the third channel 240 can be an additional inlet 245, which can provide space for a thermocouple or additional sensor. Additionally, in some embodiments, to limit leakage from any of the channels into the chamber environment (which can be a vacuum environment), the radially outermost portion of any channel can be maintained at least about 1 mm from the outer edge of the substrate support, and can be maintained at a distance of greater than or about 2 mm, greater than or about 3 mm, greater than or about 4 mm, greater than or about 5 mm, greater than or about 6 mm, greater than or about 7 mm, greater than or about 8 mm, greater than or equal to 9 mm, greater than or equal to 10 mm, or greater from the outer edge.

[0050] As previously described, the electrostatic chuck body 205 may be formed by joining a plurality of plates that may define one or more channels. The channels may be formed in a mold or green body, which may then be sintered together to form a monolithic electrostatic chuck body that may include the channels and components described above. Figure 3 A schematic plan view of a portion of an exemplary substrate support assembly according to some embodiments of the present technology is shown. The figure may show a plan view of a first plate 300, which may be part of the electrostatic chuck body 205 described above. The plate may include any of the features or characteristics of the chuck body and may define a first channel 230 within a surface of the plate.

[0051] The first channel 230 may be a set of interconnected channels formed along the surface of the plate 300. The set of interconnected channels may be fluidically connected throughout the channel and may form a single, continuous cavity within the surface. The first channel 230 may include a portion 305 extending to a central inlet. The portion 305 may fluidically couple the first channel 230 to the rods 210 of the substrate support. This may allow the first channel to be maintained at atmospheric conditions or, in some embodiments, provide an inlet for fluid to be pumped or flowed into and out of the channel. The interconnected channels of the first channel 230 may include a plurality of annular channels 310 or semi-annular channels formed within the plate. The annular channels 310 may be concentric, extending radially outward from the plate. A plurality of channel interconnects 315 may be formed between the annular channels 310. The channel interconnects 315 may fluidically couple the annular channels and provide fluid communication throughout the first channel 230. The first channel 230 may extend around one or more holes 320 formed through the plate. The one or more holes 320 may provide an inlet for the lift rods extending through the substrate support. Because the lift pins may extend into the vacuum conditions of the chamber, the first channel 230 and other channels through the other plates may not extend through or intersect the holes to limit any access between the channels and the processing environment.

[0052] Figure 4 A schematic plan view of a portion of an exemplary substrate support assembly according to some embodiments of the present technology is shown. The figure may show a plan view of a second plate 400, which may be a portion of the electrostatic chuck body 205 described above. The plate may include any of the features or characteristics of the chuck body and may define the second channel 235 within a surface of the plate. The plate 400 may include any of the features of the first plate 300 described above.

[0053] For example, the second channel 235 can be a set of interconnected channels formed along the surface of the plate 300, similar to the first channel 230. The set of interconnected channels can be fluidically connected throughout the channel and can form a single, continuous cavity within the surface. The second channel 235 can include a portion 405 extending to a central inlet. The portion 405 can fluidically couple the second channel 235 to the rod 210 of the substrate support. This can allow the second channel to be maintained at atmospheric conditions or, in some embodiments, provide an inlet for fluid to be pumped or flowed into and out of the channel. The interconnected channels of the second channel 235 can include a plurality of annular channels 410 or semi-annular channels formed within the plate. The annular channels 410 can be concentric, extending radially outward from the plate. A plurality of channel interconnects 415 can be formed between the annular channels 410. The plurality of channel interconnects 415 can fluidically couple the annular channels and provide fluid communication throughout the second channel 235.

[0054] As shown, the annular channel 410 of the second plate 400 can be radially offset from the annular channel 310 of the first plate 300 along a radius of the electrostatic chuck body. This can promote structural support across the substrate support when the plates are joined together and provide improved thermal connectivity across the plates, which can maintain uniform heating across the plates to limit temperature effects that might otherwise be caused by the formed channel. Additionally, the plurality of second channel interconnects 415 can be azimuthally offset around the locations around the first plate where the second and first channel interconnects 315 can be located. Similarly, this can maintain structural support throughout the thickness of the substrate support between the planes of the chuck body in which the channels are formed.

[0055] Figure 5 A schematic plan view of a portion of an exemplary substrate support assembly according to some embodiments of the present technology is shown. The figure may show a plan view of a third plate 500, which may be part of the electrostatic chuck body 205 described above. The plate may include any of the features or characteristics of the chuck body and may define the third channel 240 within a surface of the plate. The plate 500 may include any of the features of the first plate 300 or the second plate 400 described above.

[0056] For example, the third channel 240 can be a set of interconnected channels formed along the surface of the plate 500, similar to the first channel 230. The set of interconnected channels can be fluidically connected throughout the channel and can form a single, continuous cavity within the surface. The third channel 240 can include a portion 505 extending to a central inlet. The portion 505 can fluidically couple the third channel 240 to the rod 210 of the substrate support. This can allow the third channel to be maintained at atmospheric conditions or, in some embodiments, provide an inlet for fluid to be pumped or flowed into and out of the channel. In some embodiments, each of the portions 305, 405, and 505 can be fluidically coupled to an aperture extending at least partially through the substrate support (although the aperture may not extend completely through the substrate supporting surface of the substrate support) to limit any interaction with the processing environment (such as vacuum conditions). The interconnected channels of the third channel 240 can include a plurality of annular channels 510 or semi-annular channels formed within the plate. The annular channels 510 can be concentric, extending radially outward from the plate. A plurality of channel interconnects 515 may be formed between the annular channels 510 , which may fluidly couple the annular channels and provide fluid communication throughout the third channel 240 .

[0057] As shown, the annular channel 510 of the third plate 500 can be radially aligned with the annular channel 310 of the first plate 300 along a radius of the electrostatic chuck body. Additionally, a plurality of second channel interconnects 515 can be azimuthally aligned around the second plate where the first channel interconnects 315 can be located. While some embodiments as shown may include this interconnect arrangement, because the third channel 240 can be further removed from the first channel 230 and the second channel 235, in some embodiments the third channel 240 can be formed in a variety of arrangements. For example, in some embodiments, the third channel 240 can be formed with one or more of the annular channel 510 or the channel interconnects 515 aligned with relevant aspects of the second channel 235.

[0058] Additionally, in some embodiments, the third channel 240 may be formed with one or more of the annular channels 510 or channel interconnects 515 offset from the associated aspects of the second channel 235 and the first channel 230, such that each channel's interconnect is azimuthally offset from any other channel's interconnect, and / or each of the annular channels 510 may be radially offset from any other channel's annular channels. The third plate 500 may also define an additional inlet 245 within which a thermocouple may be positioned during operation. The inlet 245 may be a fourth channel or recess formed in the third plate 500 and may extend radially outward from the central aperture of the third plate. As shown, in some embodiments, the inlet 245 may not intersect any portion of the third channel 240.

[0059] Any of the plates may be characterized by the thickness of the plate and the depth of the channel formed within the plate. Although the plate may have any particular dimensions, in some embodiments, the channel may extend through at least 25% of the thickness of the plate and may extend into the plate to a depth greater than or about 30%, greater than or about 35%, greater than or about 40%, greater than or about 45%, greater than or about 50%, greater than or about 55%, greater than or about 60%, greater than or about 65%, greater than or about 70%, greater than or about 75%, greater than or about 80%, or more, although in some embodiments, the channel may not extend completely through the plate.

[0060] Steering Figure 6 A schematic partial cross-sectional view of an exemplary substrate support 600 according to some embodiments of the present technology is shown and may illustrate a channel. The substrate support 600 may include any features, characteristics, or aspects of any of the components previously described and may illustrate further details of the substrate support 200 described above. For example, the substrate support 600 may include electrodes, heaters, and ground electrodes as discussed with respect to the substrate support 200 and may illustrate a channel formed through the chuck body as previously described.

[0061] As shown, substrate support 600 may illustrate a portion of an electrostatic chuck body 605 having a plurality of channels defined therein. The substrate support may include a first channel 230, a second channel 235, and a third channel 240, as well as any of the variations previously discussed and similarly encompassed by the present technology. As described above, when the plates are sintered, bonded, or otherwise combined to create chuck body 605, the channels may be aligned to maintain structural support throughout the chuck body and to maintain adequate heat transfer through the support. For example, each annular channel of the second channel 235 may be radially offset from an annular channel of the first channel 230. This particular cross-sectional view may extend along the channel interconnects of the first channel 230, illustrating that the channel interconnects of the second channel 235 are azimuthally offset from the channel interconnects of the first channel 230. The third channel 240 is shown as being aligned with the first channel 230 both radially with respect to the annular channels and azimuthally with respect to the channel interconnects of the fluidically coupled annular channels.

[0062] When the plates are combined, the plates may include additional plates on either or both sides of the plates, thereby defining a channel for creating a complete electrostatic chuck body, which may define the thickness of the chuck body. Although in embodiments of the present technology, the chuck body may be characterized by any thickness, in some embodiments, the electrostatic chuck body may maintain a distance between the hot and ground electrodes of less than or about 30 mm, and may maintain a distance between the electrodes of less than or about 25 mm, less than or about 20 mm, less than or about 18 mm, less than or about 16 mm, less than or about 14 mm, less than or about 12 mm, less than or about 10 mm, or less. As the distance between the electrodes decreases, the effective capacitance between them may increase, resulting in losses within the system.

[0063] However, by incorporating channels that can create a volume of fluid or air within the chuck body, the effective capacitance can be reduced. Thus, with electrode spacing within any of the recited ranges, the effective capacitance through the chuck body can be less than or about 1,000 pF, and can be less than or about 980 pF, less than or about 960 pF, less than or about 950 pF, less than or about 940 pF, less than or about 930 pF, less than or about 920 pF, less than or about 910 pF, less than or about 900 pF, less than or about 890 pF, less than or about 880 pF, less than or about 870 pF, less than or about 860 pF, less than or about 850 pF, less than or about 840 pF, less than or about 830 pF, less than or about 820 pF, less than or about 810 pF, less than or about 800 pF, less than or about 790 pF, or less. As previously discussed, this can occur by increasing the volume percentage of air within the chuck body by incorporating channels. For example, in some embodiments, the volume percentage of air within the electrostatic chuck body can be greater than or about 2%, and can be greater than or about 4%, greater than or about 6%, greater than or about 8%, greater than or about 10%, greater than or about 12%, greater than or about 14%, greater than or about 16%, greater than or about 18%, greater than or about 20%, or more. As previously discussed, this volume percentage may not be the result of increased porosity, which within these ranges may result in air leakage through the chuck body. Thus, an electrostatic chuck body according to embodiments of the present technology can be characterized by an effective capacitance similar to a chuck body having an electrode spacing that can be up to twice the distance or more.

[0064] Figure 7A schematic plan view of a portion of an exemplary electrostatic chuck body 700 according to some embodiments of the present technology is shown. The chuck body can be included in any system and can be replaced by the chuck body 205 or any other component. The electrostatic chuck body 700 can include a set of channels 705 within a single layer through the chuck body to create a percentage of air volume, as discussed above. The channels 705 can be fluidically accessed from a central aperture as previously described and can be formed between the heater and the thermode as discussed above. The channels 705 can be formed recessed from the outer edge of the substrate support to maintain fluid isolation from the processing area of ​​the chamber in which the substrate support can be located. The top portion of the substrate support (such as including the thermode and substrate supporting surface) can be bonded, joined, or sintered to the chuck body 700, and a rod can be coupled to the backside surface to create a substrate support assembly that can include any of the components, features, or characteristics described above. By utilizing a chuck body according to embodiments of the present technology, improved electrical performance can be provided while maintaining the dimensional characteristics of the substrate support.

[0065] In the previous description, for the purpose of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0066] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative configurations, and equivalents may be used without departing from the spirit of the embodiments. Furthermore, many well-known processes and components have not been described to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be construed as limiting the scope of the present technology.

[0067] Where a range of values ​​is provided, it will be understood that, unless the context clearly indicates otherwise, each intermediate value between the upper and lower limits of the range is also specifically disclosed (to the smallest fraction of the unit of the lower limit). Any declared value or undeclared intermediate value in the declared range and any narrower range between any other declared value or intermediate value in the declared range are encompassed. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and each range that includes either, neither, or both of the upper and lower limits in the smaller range is also encompassed within the present technology, subject to any specifically excluded limits in the declared range. Where the declared range includes one or both of the limits, ranges that exclude one or both of those included limits are also encompassed.

[0068] As used herein and in the claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a heater" includes a plurality of such heaters and reference to "the protrusion" includes reference to one or more protrusions and equivalents thereof known to those skilled in the art, and so forth.

[0069] Furthermore, when used in this specification and the appended claims, the words “comprise(s),” “compring,” “contain(s),” “containing,” “include(s),” and “including” are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

1. A substrate support assembly comprising: an electrostatic chuck body defining a substrate supporting surface; a support rod coupled to the electrostatic chuck body; an electrode embedded within the electrostatic chuck body proximate the substrate supporting surface; a ground electrode, the ground electrode being embedded in the electrostatic chuck body; a heater embedded in the electrostatic chuck body between the electrode and the ground electrode; as well as one or more channels formed in the electrostatic chuck body between the electrode and the ground electrode, wherein: Each of the one or more channels is fluidly isolated from the substrate supporting surface; and A first channel of the one or more channels is formed in the electrostatic chuck body between the ground electrode and the heater.

2. The substrate support assembly of claim 1 , wherein the electrostatic chuck body comprises a monolithic body of ceramic material incorporating the electrode, the ground electrode, and each of the one or more channels.

3. The substrate support assembly of claim 1 , wherein the one or more channels comprise a plurality of channels, wherein a second channel of the plurality of channels is formed in the electrostatic chuck body between the electrode and the heater.

4. The substrate support assembly of claim 3, wherein a third channel of the plurality of channels is formed in the electrostatic chuck body between the electrode and the heater, vertically offset from the second channel of the plurality of channels in the electrostatic chuck body.

5. The substrate support assembly of claim 4, wherein the second channel comprises a set of first interconnected channels, the set of first interconnected channels comprising: a plurality of first annular channels distributed across a first plane of the electrostatic chuck body, and A plurality of first channel interconnects are radially distributed between each first annular channel of the plurality of first annular channels.

6. The substrate support assembly of claim 5, wherein the third channel comprises a set of second interconnected channels, the set of second interconnected channels comprising: a plurality of second annular channels distributed across a second plane of the electrostatic chuck body, wherein the second plane of the electrostatic chuck body is perpendicularly offset from the first plane of the electrostatic chuck body, and A plurality of second channel interconnects are radially distributed between each of the plurality of second annular channels.

7. The substrate support assembly of claim 6, wherein the second plurality of annular channels are radially offset from the first plurality of annular channels, and wherein the second plurality of channel interconnects are azimuthally offset from the first plurality of channel interconnects.

8. The substrate support assembly of claim 6, wherein the first channel comprises a set of third interconnected channels, the set of third interconnected channels comprising: a plurality of third annular channels distributed across a third plane of the electrostatic chuck body, wherein the third plane of the electrostatic chuck body is perpendicularly offset from the first plane of the electrostatic chuck body and the second plane of the electrostatic chuck body, and A plurality of third channel interconnects are radially distributed between each of the plurality of third annular channels.

9. The substrate support assembly of claim 8, wherein each channel of the third plurality of annular channels is vertically aligned with an associated channel of the first plurality of annular channels, and wherein the second plurality of channel interconnects are azimuthally aligned with the first plurality of channel interconnects.

10. The substrate support assembly of claim 8, further comprising: A fourth channel is formed in the third plane of the electrostatic chuck body and is configured to house a thermocouple extending through the support rod coupled to the electrostatic chuck body.

11. A substrate support assembly comprising: an electrostatic chuck body defining a substrate supporting surface; a support rod coupled to the electrostatic chuck body; an electrode embedded within the electrostatic chuck body proximate the substrate supporting surface; a ground electrode, the ground electrode being embedded in the electrostatic chuck body; a heater embedded in the electrostatic chuck body between the electrode and the ground electrode; a first set of interconnecting channels formed in the electrostatic chuck body between the electrode and the ground electrode; a second set of interconnecting channels formed in the electrostatic chuck body between the electrode and the ground electrode; as well as A third set of interconnect channels is formed in the electrostatic chuck body between the heater and the ground electrode, wherein the third set of interconnect channels is fluidly isolated from the substrate supporting surface.

12. The substrate support assembly of claim 11, wherein the second set of interconnecting channels is radially offset from the first set of interconnecting channels.

13. The substrate support assembly of claim 11, wherein the first set of interconnecting channels is maintained at least 5 mm from a radial edge of the electrostatic chuck body.

14. The substrate support assembly of claim 11, wherein the first set of interconnected channels and the second set of interconnected channels are maintained at atmospheric pressure.

15. The substrate support assembly of claim 14, wherein an effective capacitance within the electrostatic chuck body between the electrode and the ground electrode is less than or about 1,000 pF.

16. The substrate support assembly of claim 11, wherein the electrostatic chuck body is characterized by a volume percentage of air of greater than or about 10%.

17. A substrate support assembly comprising: an electrostatic chuck body defining a substrate supporting surface; a support rod coupled to the electrostatic chuck body; an electrode embedded within the electrostatic chuck body proximate the substrate supporting surface; a ground electrode, the ground electrode being embedded in the electrostatic chuck body; a heater embedded in the electrostatic chuck body between the electrode and the ground electrode; a first set of interconnecting channels formed in the electrostatic chuck body between the electrode and the heater; a second set of interconnect channels formed in the electrostatic chuck body between the first set of interconnect channels and the heater; as well as A third set of interconnecting channels is formed in the electrostatic chuck body between the heater and the ground electrode.

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