Anti-conductive grid fixing structure for ion source and installation method
By adopting an anti-conductive gate fixing structure in the ion source and fixing the gate with a concentric circle groove and dovetail groove structure, the gate conduction problem is solved, the service cycle is extended, the maintenance frequency is reduced, and the production cost is reduced.
Patent Information
- Application Number
- CN202110541464.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-05-18
- Publication Date
- 2025-09-02
- Estimated Expiration
- 2041-05-18
AI Technical Summary
After long-term use, the gate of existing ion sources is easily turned on due to conductive dielectric coating, which requires frequent maintenance and affects the normal operation of the equipment.
The anti-conductive gate fixing structure is adopted. By opening concentric grooves and dovetail groove structures on the gate support, the gate is fixed with screws to ensure gate insulation and enhance strength, and avoid conduction problems.
Effectively extends the usage cycle of Grid components, reduces maintenance frequency, and reduces production costs.
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Figure CN115376872B_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of ion beam etching related accessories, and in particular relates to an anti-conductive grid fixing structure for an ion source and an installation method. Background Art
[0002] The ion source is a key component of ion beam etching, and the quality of the ion source directly affects the etching performance. RF inductively coupled ion sources are widely used in ion beam etching, material surface modification, and thin film processing due to their advantages such as high density, pollution-free, easy maintenance, and long life. Ion beam etching uses the principle of glow discharge to decompose argon gas into argon ions. The argon ions are accelerated by the anode electric field and physically bombard the sample surface to achieve the etching effect. The etching process is to fill the ion source discharge chamber with an inert gas such as Ar, ionize it to form a plasma, and transmit the plasma to the target substrate in the form of an ion beam through the gate. It is then fired at the solid surface to bombard the solid surface atoms, causing the material atoms to sputter and achieve the etching purpose. Ion beam etching can be widely used for etching various metals and their alloys, as well as non-metals, oxides, nitrides, carbides, semiconductors, polymers, ceramics, infrared and superconducting materials.
[0003] When etching is required, the spiral coil ionizes the gas in the discharge chamber, accelerating the electrons in the discharge chamber by the electric field to generate dense plasma. The plasma in the discharge chamber is drawn out through the Grid assembly and bombards the target material in the form of an ion beam to etch the wafer. The Grid assembly can choose two or three grids. The two grids include a screen grid and an acceleration grid. The screen grid can focus the plasma to form an ion beam, and the acceleration grid accelerates the ion beam. The three grids are based on the two grids and add a deceleration grid. The deceleration grid is grounded or positively charged, which can effectively reduce the divergence of the ion beam. The grid assembly plays a vital role in the uniformity of ion beam etching. A good grid design can extend the service life of the grid and reduce the maintenance cycle of the grid.
[0004] In existing designs, the connection between the acceleration grid and the screen grid and deceleration grid is mostly made by insulating beads, insulating rings (such as ceramic beads and ceramic rings), etc., which can effectively insulate the grids and avoid the risks of mutual conduction and short circuit between the grids. However, when the grid assembly is used for a long time, the grid material sputters onto the insulating material, coating the insulating material with a layer of conductive medium, causing the grids to conduct with each other, affecting the normal operation of the grids. Therefore, the insulating material needs to be replaced every once in a while, and the grid assembly needs to be regularly maintained to ensure the normal operation of the ion source. The present invention proposes a method for fixing the grid for the ion source, which can effectively prevent the mutual conduction between the grids and greatly reduce the maintenance cycle of the grid. Summary of the Invention
[0005] The purpose of the present invention is to solve the problems existing in the prior art and to propose an anti-conductive grid fixing structure for an ion source.
[0006] In order to achieve the above object, the present invention adopts the following technical solutions:
[0007] An anti-conductive grid fixing structure for an ion source includes a circular grid support, wherein a plane of the grid support is provided with a first concentric fixing circular groove, a first mounting circular groove, a second fixing circular groove, a second mounting circular groove, a third fixing circular groove, and a third mounting circular groove;
[0008] The diameters of the first fixing circular groove, the first mounting circular groove, the second fixing circular groove, the second mounting circular groove, the third fixing circular groove, and the third mounting circular groove decrease in sequence, and the depths of the first fixing circular groove, the first mounting circular groove, the second fixing circular groove, the second mounting circular groove, the third fixing circular groove, and the third mounting circular groove from the gate support plane increase in sequence;
[0009] The first installation circular groove is provided with a deceleration grid, the second installation circular groove is provided with an acceleration grid, and the third installation circular groove is provided with a screen grid.
[0010] As a further preferred solution, the first mounting circular groove, the second mounting circular groove and the third mounting circular groove are provided with threaded holes, and the deceleration grid, the acceleration grid and the screen grid are respectively fixed in the threaded holes by screws.
[0011] As a further preferred solution, a circle of material deposition grooves is respectively arranged in the second fixed circular groove and the third fixed circular groove.
[0012] As a further preferred solution, the lower width of the material deposition groove is greater than the upper width; the material deposition groove of the second fixed circular groove is arranged along the outer edge of the second fixed circular groove, and there is a gap between it and the deceleration grid; the material deposition groove of the third fixed circular groove is arranged along the outer edge of the third fixed circular groove, and there is a gap between it and the acceleration grid.
[0013] As a further preferred solution, the longitudinal section of the material deposition trough is a dovetail groove structure, and the depth-to-width ratio of the dovetail groove structure is greater than 0.5.
[0014] As a further preferred solution, the longitudinal cross-section of the material deposition trough is a rectangular trough structure, and the depth-to-width ratio of the rectangular trough structure is greater than 1.
[0015] As a further preferred solution, the width of the material deposition groove is 0.3 mm to 5 mm.
[0016] As a further preferred solution, the upper surface of the speed reducer is in the same plane as the first fixed circular groove, the upper surface of the speed reducer is in the same plane as the second fixed circular groove, and the upper surface of the screen grille is in the same plane as the third fixed circular groove.
[0017] As a further preferred solution, the distance between the three gate layers can be between 0.9 mm and 2 mm.
[0018] A method for installing an anti-conductive grid fixing structure for an ion source comprises the following steps:
[0019] Step 1: Opening a first fixing circular groove, a first installation circular groove, a second fixing circular groove, a second installation circular groove, a third fixing circular groove, and a third installation circular groove in sequence downward on the plane of the gate support, wherein the diameters of the first fixing circular groove, the first installation circular groove, the second fixing circular groove, the second installation circular groove, the third fixing circular groove, and the third installation circular groove decrease in sequence;
[0020] Step 2: A material deposition groove is excavated on the inner plane of the second fixed circular groove and the third fixed circular groove respectively;
[0021] Step 3: Drill multiple threaded holes on the flat surface of the first mounting circular groove, the second mounting circular groove, and the third mounting circular groove;
[0022] Step 4: Three circles of through holes are opened on the deceleration grid, wherein the outer circle of through holes corresponds to the threaded holes of the first mounting circular groove, the middle circle of through holes corresponds to the threaded holes of the second mounting circular groove, and the inner circle of through holes corresponds to the threaded holes of the third mounting circular groove; two circles of through holes are opened on the acceleration grid, wherein the outer circle of through holes corresponds to the threaded holes of the second mounting circular groove, and the inner circle of through holes corresponds to the threaded holes of the third mounting circular groove; one circle of through holes is opened on the screen grid, corresponding to the threaded holes of the third mounting circular groove;
[0023] Step 5: Install the deceleration grid in the first installation circular groove, install the acceleration grid in the second installation circular groove, install the screen grid in the third installation circular groove, and fix them with screws.
[0024] Compared to existing technologies, this invention secures the grids separately to the grid support, effectively ensuring the precise positioning of the three grids, eliminating the need for multiple positioning holes around the grids and increasing grid strength. Dovetail grooves in the grid support effectively insulate the different grids, preventing grid conduction issues caused by long-term use, significantly reducing maintenance cycles and production costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 It is an explosion diagram of the present invention;
[0026] Figure 2 This is a diagram of the grid installation of the present invention;
[0027] Figure 3 It is a partial structural cross-sectional view of the present invention. DETAILED DESCRIPTION
[0028] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.
[0029] Example 1:
[0030] The present invention provides an anti-conductive grid fixing structure for an ion source, comprising a circular grid support 5, the plane of the grid support 5 being provided with a concentric first fixing circular groove 6, a first mounting circular groove 7, a second fixing circular groove 8, a second mounting circular groove 9, a third fixing circular groove 10, and a third mounting circular groove 11. The grid support 5 is made of a high-temperature resistant insulating material, such as ceramic.
[0031] The diameters of the first fixing circular groove 6 , the first installation circular groove 7 , the second fixing circular groove 8 , the second installation circular groove 9 , the third fixing circular groove 10 and the third installation circular groove 11 decrease in sequence.
[0032] The depths of the first fixing circular groove 6 , the first installation circular groove 7 , the second fixing circular groove 8 , the second installation circular groove 9 , the third fixing circular groove 10 and the third installation circular groove 11 from the plane of the gate support 5 increase in sequence.
[0033] That is, the first fixed circular groove 6 is opened first, the first mounting circular groove 7 is opened on the first fixed circular groove 6, the second fixed circular groove 8 is opened on the first mounting circular groove 7, the second mounting circular groove 9 is opened on the second fixed circular groove 8, the third fixed circular groove 10 is opened on the second mounting circular groove 9, and the third mounting circular groove 11 is opened on the third fixed circular groove 10.
[0034] The first mounting circular groove 7, the second mounting circular groove 9, and the third mounting circular groove 11 are respectively mounted with the deceleration fence 2, and the first mounting circular groove 7, the second mounting circular groove 9, and the third mounting circular groove 11 have threaded holes. The deceleration fence 2, the acceleration fence 3, and the screen grille 4 are respectively fixed in the threaded holes by screws 1. A plurality of threaded holes are provided along the edges of the first mounting circular groove 7, the second mounting circular groove 9, and the third mounting circular groove 11. The edges of the deceleration fence 2, the acceleration fence 3, and the screen grille 4 are respectively provided with holes corresponding to the threaded holes.
[0035] Specifically, three circles of threaded holes are provided around the edge of the top-layer deceleration fence 2. The outermost circle is for the screws 1 to pass through for installation, and the other two circles are for facilitating the installation of the screws 1 of the acceleration fence 3 and the screen grille 4. Similarly, two circles of threaded holes are provided around the edge of the acceleration fence 3. The outermost circle is for the screws 1 to pass through for installation, and the other circle is for facilitating the installation of the screws 1 of the acceleration screen grille 4.
[0036] Example 2:
[0037] The second fixed circular groove 8 and the third fixed circular groove 10 are respectively provided with a circle of material deposition grooves 12. The longitudinal cross-section of the material deposition grooves 12 is a dovetail groove structure or a trapezoidal structure. The depth-to-width ratio of the dovetail groove structure is greater than 0.5. The lower part of the material deposition groove 12 is wider than the upper part. The larger the slope of the two sides of the dovetail groove, the better. This can effectively prevent material deposition on the gate and cause conduction between the gates.
[0038] The longitudinal cross-section of the material deposition tank 12 may also be a rectangular tank structure, and the depth-to-width ratio of the rectangular tank structure is greater than 1, thereby increasing the storage space.
[0039] The material deposition groove 12 of the second fixed circular groove 8 is arranged along the outer edge of the second fixed circular groove 8 , with a gap between the material deposition groove 12 and the speed reduction fence 2 .
[0040] The material deposition groove 12 of the third fixed circular groove 10 is arranged along the outer edge of the third fixed circular groove 10 , with a gap between it and the acceleration grid 3 . The width of the material deposition groove 12 is 0.3 mm to 5 mm, ensuring storage space.
[0041] The upper surface of the speed reduction grid 2 is in the same plane as the first fixed circular groove 6, the upper surface of the speed reduction grid 3 is in the same plane as the second fixed circular groove 8, and the upper surface of the screen grid 4 is in the same plane as the third fixed circular groove 10. The distance between the three layers of grids is 0.9mm~2mm.
[0042] It should also be noted that the holes between the grids can be installed in a triangular shape, and the screws 1 on each grid can be installed in a staggered manner to avoid drilling holes in a line, which can solve the strength problem of the grid.
[0043] A method for installing an anti-conductive grid fixing structure for an ion source according to the present invention comprises the following steps:
[0044] Step 1: A first fixing circular groove 6, a first mounting circular groove 7, a second fixing circular groove 8, a second mounting circular groove 9, a third fixing circular groove 10, and a third mounting circular groove 11 are sequentially opened downward on the plane of the gate support 5, wherein the diameters of the first fixing circular groove 6, the first mounting circular groove 7, the second fixing circular groove 8, the second mounting circular groove 9, the third fixing circular groove 10, and the third mounting circular groove 11 decrease in sequence;
[0045] Step 2: A material deposition groove 12 is excavated on the inner plane of the second fixed circular groove 8 and the third fixed circular groove 10 respectively;
[0046] Step 3: Drill multiple threaded holes on the plane of the first mounting circular groove 7, the second mounting circular groove 9, and the third mounting circular groove 11 respectively;
[0047] Step 4: Three circles of through holes are opened on the deceleration grid 2, wherein the outer circle of through holes corresponds to the threaded holes of the first mounting circular groove 7, the middle circle of through holes corresponds to the threaded holes of the second mounting circular groove 9, and the inner circle of through holes corresponds to the threaded holes of the third mounting circular groove 11; two circles of through holes are opened on the acceleration grid 3, wherein the outer circle of through holes corresponds to the threaded holes of the second mounting circular groove 9, and the inner circle of through holes corresponds to the threaded holes of the third mounting circular groove 11; one circle of through holes is opened on the screen grid 4, corresponding to the threaded holes of the third mounting circular groove 11;
[0048] Step 5: Install the deceleration grid 2 in the first installation circular groove 7 , install the acceleration grid 3 in the second installation circular groove 9 , install the screen grid 4 in the third installation circular groove 11 , and fix them with screws 1 .
[0049] The above description is only a preferred specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any technician familiar with the technical field, within the technical scope disclosed by the present invention, who makes equivalent replacements or changes based on the technical solution and inventive concept of the present invention, should be covered by the scope of protection of the present invention.
Claims
1. An anti-conductive grid fixing structure for an ion source, characterized in that: It comprises a circular grid support (5), wherein the plane of the grid support (5) is provided with a concentric first fixed circular groove (6), a first mounting circular groove (7), a second fixed circular groove (8), a second mounting circular groove (9), a third fixed circular groove (10), and a third mounting circular groove (11); The diameters of the first fixed circular groove (6), the first mounting circular groove (7), the second fixed circular groove (8), the second mounting circular groove (9), the third fixed circular groove (10), and the third mounting circular groove (11) decrease in sequence, and the depths of the first fixed circular groove (6), the first mounting circular groove (7), the second fixed circular groove (8), the second mounting circular groove (9), the third fixed circular groove (10), and the third mounting circular groove (11) from the plane of the gate support (5) increase in sequence; A deceleration grid (2) is mounted on the first mounting circular groove (7), an acceleration grid (3) is mounted on the second mounting circular groove (9), and a screen grid (4) is mounted on the third mounting circular groove (11); A circle of material deposition grooves (12) is respectively arranged in the second fixed circular groove (8) and the third fixed circular groove (10); The lower portion of the material deposition groove (12) is wider than the upper portion; the material deposition groove (12) of the second fixed circular groove (8) is arranged along the outer edge of the second fixed circular groove (8), with a gap between it and the deceleration grid (2); and the material deposition groove (12) of the third fixed circular groove (10) is arranged along the outer edge of the third fixed circular groove (10), with a gap between it and the acceleration grid (3).
2. The anti-conductive grid fixing structure for an ion source according to claim 1, characterized in that: The first mounting circular groove (7), the second mounting circular groove (9), and the third mounting circular groove (11) are provided with threaded holes, and the deceleration grid (2), the acceleration grid (3), and the screen grid (4) are respectively fixed in the threaded holes by screws (1).
3. The anti-conductive grid fixing structure for an ion source according to claim 1, characterized in that: The longitudinal cross-section of the material deposition trough (12) is a dovetail groove structure, and the depth-to-width ratio of the dovetail groove structure is greater than 0.
5.
4. The anti-conductive grid fixing structure for an ion source according to claim 1, characterized in that: The longitudinal cross-section of the material deposition trough (12) is a rectangular trough structure, and the depth-to-width ratio of the rectangular trough structure is greater than 1.
5. The anti-conductive grid fixing structure for an ion source according to claim 1, wherein: The width of the material deposition groove (12) is 0.3 mm to 5 mm.
6. The anti-conductive grid fixing structure for an ion source according to claim 1, characterized in that: The upper surface of the deceleration grid (2) and the first fixed circular groove (6) are in the same plane, the upper surface of the speed grid (3) and the second fixed circular groove (8) are in the same plane, and the upper surface of the screen grid (4) and the third fixed circular groove (10) are in the same plane.
7. The anti-conductive grid fixing structure for an ion source according to claim 1, characterized in that: The distance between the three layers of gates is 0.9mm~2mm.
8. A method for installing an anti-conductive grid fixing structure for an ion source according to any one of claims 1 to 6, characterized in that: The following steps are involved: Step 1: a first fixed circular groove (6), a first mounting circular groove (7), a second fixed circular groove (8), a second mounting circular groove (9), a third fixed circular groove (10), and a third mounting circular groove (11) are sequentially opened downwardly on the plane of the gate support (5), wherein the diameters of the first fixed circular groove (6), the first mounting circular groove (7), the second fixed circular groove (8), the second mounting circular groove (9), the third fixed circular groove (10), and the third mounting circular groove (11) decrease in sequence; Step 2: excavating a material deposition groove (12) on the inner plane of the second fixed circular groove (8) and the third fixed circular groove (10); Step 3: Drill a plurality of threaded holes on a circle of the plane inside the first mounting circular groove (7), the second mounting circular groove (9), and the third mounting circular groove (11); Step 4: Three circles of through holes are provided on the deceleration grid (2), wherein the outer circle of through holes corresponds to the threaded holes of the first mounting circular groove (7), the middle circle of through holes corresponds to the threaded holes of the second mounting circular groove (9), and the inner circle of through holes corresponds to the threaded holes of the third mounting circular groove (11); two circles of through holes are provided on the acceleration grid (3), wherein the outer circle of through holes corresponds to the threaded holes of the second mounting circular groove (9), and the inner circle of through holes corresponds to the threaded holes of the third mounting circular groove (11); and one circle of through holes is provided on the screen grid (4), corresponding to the threaded holes of the third mounting circular groove (11); Step 5: Install the deceleration grid (2) in the first installation circular groove (7), install the acceleration grid (3) in the second installation circular groove (9), install the screen grid (4) in the third installation circular groove (11), and fix them with screws (1).
Citation Information
Patent Citations
Charged particle beam extraction and formation apparatus
US20030184206A1