Elastic wave device and module including the same

Abstract

An elastic wave device includes a wiring substrate, a plurality of electrodes, a sealing resin, and a device chip provided on the wiring substrate and electrically connected to the wiring substrate, the device chip including a wiring pattern provided on one face thereof facing the wiring substrate, the electrodes being periodically formed in a wiring region that is a region in which the wiring pattern is provided, a liquid intrusion prevention pattern being provided in the wiring region so as to protrude from the wiring pattern at a position closer to an outer edge of the wiring region than the electrodes, the sealing resin sealing the device chip and leaving a space between the wiring substrate and the device chip. With this, it is possible to provide an elastic wave device in which damage is reduced or eliminated and in which intrusion of the sealing resin into the electrodes is suppressed, and a module including the elastic wave device.

Description

Technical Field

[0001] The present invention relates to an elastic wave device and a module comprising the elastic wave device. Background Technology

[0002] Japanese Patent Document 1 (JP2020-102713) illustrates an elastic wave device. The elastic wave device includes a hollow portion formed therewith with a substrate and a dam portion to prevent sealing resin from intruding into the hollow portion from the outside.

[0003] By forming dams around the IDT (Interdigital Transducer) electrodes and connectors in a top view, the intrusion of sealing resin into the electrode configuration area of ​​the elastic wave device can be suppressed. However, because the dams are large patterns, their formation will limit the design area or increase the size of the device. Furthermore, if the dams are metallic patterns, the coupling effect will affect the characteristics of the device. Moreover, the dams formed along the outer edge of the device chip must have a certain height to suppress the intrusion of sealing resin, which is more difficult to manufacture. Summary of the Invention

[0004] In view of the above-mentioned problems, this disclosure aims to provide an elastic wave device that reduces or eliminates damage and can suppress the intrusion of sealing resin into the electrode, and a module including the elastic wave device.

[0005] This disclosure discloses an elastic wave device, comprising: a wiring substrate; a device chip disposed on and electrically connected to the wiring substrate, the device chip including a wiring pattern disposed on its side facing the wiring substrate, and a plurality of electrodes periodically formed in a wiring region which is a region where the wiring pattern is disposed, wherein a liquid intrusion prevention pattern protruding from the wiring pattern is provided in the wiring region closer to the outer edge of the wiring region than the electrodes; and a sealing resin for sealing the device chip and for sealing the space left between the wiring substrate and the device chip.

[0006] In one embodiment of this disclosure, the electrode has a resonator capable of exciting an elastic surface wave and a reflector adjacent to the resonator, and the anti-liquid intrusion pattern is disposed in an orthogonal direction not parallel to the propagation direction of the elastic surface wave.

[0007] In one embodiment of this disclosure, the wiring pattern includes a bump pad and a wiring portion electrically connected between the bump pad and the electrode, wherein the liquid ingress prevention pattern protrudes from the wiring portion.

[0008] In one embodiment of this disclosure, the wiring pattern includes a bump pad and a wiring portion electrically connected between the bump pad and the electrode, wherein the liquid ingress prevention pattern protrudes from the bump pad.

[0009] In one embodiment of this disclosure, the liquid-proof pattern has a first portion that connects to the wiring pattern and extends substantially vertically, and a second portion that extends from the front end of the first portion toward the outer edge of the device chip.

[0010] In one embodiment of this disclosure, the anti-liquid intrusion pattern has a first portion that connects to the wiring pattern and extends substantially vertically, and a second portion that extends from the front end of the first portion toward the outer edge of the device chip. The first portion is located on a straight line passing through the region between the resonator and the reflector and orthogonal to the propagation direction of the elastic surface wave.

[0011] In one embodiment of this disclosure, the liquid intrusion prevention pattern has a curved shape in a top view.

[0012] In one embodiment of this disclosure, a plurality of the liquid intrusion prevention patterns are formed on one side of the wiring pattern.

[0013] In one embodiment of this disclosure, the liquid intrusion prevention pattern is disposed only on the side of the wiring pattern that is substantially perpendicular to the propagation direction of the elastic surface wave of the electrode.

[0014] In one embodiment of this disclosure, the width of the liquid intrusion prevention pattern is smaller than the width of the wiring pattern.

[0015] In one embodiment of this disclosure, the device chip has a substrate formed by bonding a piezoelectric substrate and a support substrate, the support substrate being made of sapphire, silicon, alumina, spinel, crystal, or glass.

[0016] In one embodiment of this disclosure, the sealing resin is a thermosetting resin.

[0017] In one embodiment of this disclosure, the elastic wave device further includes another device chip forming a bandpass filter having a plurality of elastic surface wave resonators.

[0018] In one embodiment of this disclosure, the elastic wave device further includes another device chip forming a bandpass filter having a plurality of elastic acoustic thin-film resonators.

[0019] One embodiment of this disclosure includes a module comprising the elastic wave device.

[0020] The beneficial effects of the present invention are as follows: According to this disclosure, an elastic wave device that reduces or eliminates damage and can suppress the intrusion of sealing resin into the electrode can be provided, as well as a module including the elastic wave device. Attached Figure Description

[0021] Figure 1 This is a cross-sectional view of the elastic wave device in the first embodiment.

[0022] Figure 2 This is a schematic diagram of one side of the device chip in the first embodiment.

[0023] Figure 3 This is a partially enlarged view of the device chip in the first embodiment.

[0024] Figure 4 This is a schematic diagram of the sealing resin of the elastic wave device in the first embodiment.

[0025] Figure 5 This is a schematic diagram of the wiring pattern and multiple electrodes of the elastic wave device in the first embodiment.

[0026] Figure 6 This is a schematic diagram of the sealant intrusion in the comparative example.

[0027] Figure 7 This is a partially enlarged view of the device chip in the second embodiment.

[0028] Figure 8 This is a partially enlarged view of the device chip in the third embodiment.

[0029] Figure 9 This is a partially enlarged view of the device chip in the fourth embodiment.

[0030] Figure 10 This is a partially enlarged view of the device chip in the fifth embodiment. Detailed Implementation

[0031] The specific embodiments of the present invention will be described below with reference to the accompanying drawings. It should be noted that the same or equivalent parts in each figure are labeled with the same reference numerals. The descriptions of the same or equivalent parts will be appropriately simplified or omitted.

[0032] (First Embodiment)

[0033] Figure 1 This is a cross-sectional view of the elastic wave device 1 in the first embodiment. The elastic wave device 1 includes a wiring substrate 2. As an example, the wiring substrate 2 may be a multilayer substrate containing resin. In another example, the wiring substrate 2 may also be a low-temperature co-fired ceramic (LTCC) multilayer substrate formed of multiple dielectric layers. Passive components such as capacitors or inductors may also be formed inside the wiring substrate 2.

[0034] exist Figure 1In the example, the upper surface of the wiring substrate 2, which serves as the component mounting surface, is provided with a plurality of conductive pads 2b. The lower surface of the wiring substrate 2 may be, for example, the mounting surface of a motherboard. The lower surface of the wiring substrate 2 is provided with a plurality of conductive pads 2c. The conductive pads 2b and conductive pads 2c are connected through corresponding internal conductors 2a or through-hole conductors.

[0035] A device chip 3 electrically connected to the wiring substrate 2 is disposed on the wiring substrate 2. The device chip 3 is a surface elastic wave device chip. The device chip 3 has a piezoelectric substrate 3a made of piezoelectric material. As an example, the piezoelectric substrate 3a may be a substrate formed of piezoelectric single crystals such as lithium tantalate, lithium niobate, or quartz. In another example, the piezoelectric substrate 3a may be a substrate formed of piezoelectric ceramic. In yet another example, the piezoelectric substrate 3a may be a substrate formed by bonding a piezoelectric substrate and a support substrate. The support substrate may be, for example, a substrate formed of sapphire, silicon, alumina, spinel, quartz, or glass.

[0036] As an example, the piezoelectric substrate 3a is a substrate for forming functional components. For instance, a receiving filter and a transmitting filter are provided on the side (lower surface) of the device chip 3 facing the wiring substrate 2.

[0037] The receiving filter is formed in a manner that allows electrical signals in the desired frequency band to pass through. The receiving filter may, for example, be a trapezoidal filter formed by multiple series resonators and multiple parallel resonators.

[0038] The transmitting filter is formed in such a way that it allows electrical signals in the desired frequency band to pass through. The transmitting filter may, for example, be a trapezoidal filter formed by multiple series resonators and multiple parallel resonators.

[0039] exist Figure 1 In the example, the device chip 3 has a wiring pattern 3b on the side facing the wiring substrate 2, and a plurality of electrodes 3c are periodically formed in the wiring region, which is the area where the wiring pattern 3b is provided. As an example, the electrodes 3c are comb-shaped electrode fingers, i.e., IDT electrodes. A high-frequency electric field is applied to the IDT electrodes from the lead terminals on the power supply side to excite elastic surface waves. The elastic surface waves are converted into a high-frequency electric field according to the piezoelectric effect, thus obtaining the characteristics of a filter.

[0040] The wiring pattern 3b and the conductive pad 2b are electrically connected by bumps 4. The bumps 4 are, for example, gold, conductive adhesive, or solder.

[0041] The elastic wave device 1 includes a sealing resin 5. The sealing resin 5 seals the device chip 3 and leaves a space 6 between the wiring substrate 2 and the device chip 3. As an example, the device chip 3 is mounted on the wiring substrate 2, and then a resin layer is disposed on the device chip 3 in a manner that spans the device chip 3. As an example, the resin layer is a thin-film liquid epoxy resin. In another example, the resin layer may also be a synthetic resin such as polyimide, which is different from epoxy resin. A protective film made of polyethylene terephthalate (PET) may be disposed on the upper surface of the resin layer, or a base film made of polyester fiber may be disposed on the lower surface of the resin layer.

[0042] A resin layer is temporarily fixed to the device chip 3 by providing a resin layer on the device chip 3. Therefore, a structure having the device chip 3, the resin layer, and the wiring substrate 2 is formed by filling the space between the side surface of the device chip 3 and the upper surface of the wiring substrate 2 with the resin layer through an upper roller heated to at least the softening temperature of the resin layer and a lower roller. This method is called hot rolling. As long as it can be achieved... Figure 1 To achieve the lamination effect, methods other than hot rolling can also be used.

[0043] Next, in order to fully harden the resin layer, a hot pressing process is performed. For example, by using a hot press equipped with an upper mold and a lower mold that are heated to the curing temperature of the resin, the resin layer is pressed toward the wiring substrate 2, thereby suppressing the expansion of air in the space 6 and hardening the resin.

[0044] According to the first embodiment, the resin layer is heated to a softening temperature and pressure is applied to deform it, causing the resin layer to adhere tightly to the outer surface of the device chip 3 and the upper surface of the wiring substrate 2. Then, the shape is fixed by heating to a curing temperature, thus forming the sealing resin 5. For example, the sealing resin 5 makes the space 6 a sealed space and strengthens the adhesion of the wiring substrate 2 to the device chip 3. Figure 1 In this example, space 6 is a sealed space surrounded by one side of the device chip 3, the upper surface of the wiring substrate 2, and the sealing resin 5. Two or more device chips can be disposed on the wiring substrate 2. As an example, the sealing resin 5 is a thermosetting resin.

[0045] Figure 2A schematic diagram of one side of the device chip 3. In this first embodiment, one side of the device chip 3 has wiring patterns 3b and 3d. The wiring patterns 3b and 3d can be made of suitable metals or alloys such as silver, aluminum, copper, titanium, and palladium. In another example, the wiring patterns 3b and 3d can also be a stacked metal film formed by stacking multiple metal layers. The thickness of the wiring patterns 3b and 3d is, for example, between 150 nm and 400 nm.

[0046] The areas where the wiring patterns 3b and 3d are formed constitute the wiring area 10. Figure 2 In the diagram, the wiring region 10 is a rectangular area surrounded by dashed lines. The wiring patterns 3b and 3d are formed within the wiring region 10, but not outside of it. The wiring region 10 is provided with periodically arranged electrodes 3c. These electrodes 3c can provide a surface acoustic wave (SAW) filter. The electrodes 3c are, for example, a transverse SAW filter or a SAW resonant filter with a resonator.

[0047] exist Figure 2 In the example, wiring pattern 3b is a bump pad, and wiring pattern 3d is a wiring portion electrically connected between the bump pad and the electrode 3c. The shape and distribution of wiring patterns 3b and 3d can be arbitrarily varied according to the design.

[0048] In the wiring region 10, anti-liquid intrusion patterns 6 and 7 protrude from the wiring patterns 3b and 3d. The anti-liquid intrusion patterns 6 and 7 are positioned closer to the outer edge of the wiring region 10 than the electrode 3c. The anti-liquid intrusion patterns 6 and 7 can prevent or inhibit the liquid component of the sealing resin 5 from reaching the electrode 3c when it enters the inner side of the wiring region 10. Therefore, the anti-liquid intrusion patterns 6 and 7 are located between the outer edge of the wiring region 10 and the electrode 3c. Figure 2 In the example, the anti-liquid intrusion pattern 6 is designed to protrude from the wiring pattern 3d (wiring portion), thereby preventing liquid intrusion from... Figure 2 Liquid components that penetrate the inner side of the wiring area 10 from the left reach the electrode 3c. The anti-liquid intrusion pattern 7 is designed to protrude from the wiring pattern 3b (bump pad) to prevent liquid components that enter the inner side of the wiring area 10 from the upper side from reaching the electrode 3c. Wiring patterns 3b, 3d, the electrode 3c, and the anti-liquid intrusion patterns 6 and 7 are in Figure 2 The design shown is for illustrative purposes only and can be modified as needed.

[0049] Figure 3This is a schematic diagram of the shape of pattern 6, designed to prevent liquid intrusion. The electrode 3c has a resonator 31 for exciting elastic surface waves and a reflector 32 adjacent to the resonator 31. The propagation direction of the elastic surface waves is the y-direction. The x-direction is defined as the direction orthogonal to the y-direction. Figure 3 The direction from the left to the right is the positive x-direction, from which... Figure 3 The direction from the right to the left is the negative x-direction, from which... Figure 3 The direction from the bottom to the top is the positive y-direction, from Figure 3 The direction from the top to the bottom is the negative y-direction. The anti-liquid intrusion pattern 6 has a first portion 6A that connects to the wiring pattern 3d and extends substantially vertically, and a second portion 6B that extends from the front end of the first portion 6A toward the outer edge of the device chip 3. Thereby, when the liquid component 5b of the sealing resin 5 (refer to...) Figure 4 When the liquid component 5b (refer to the positive x-direction) penetrates the wiring region 10 along the wiring pattern 3d, the liquid component 5b (refer to the positive x-direction) penetrates the wiring region 10. Figure 4 The liquid component 5b (see reference 6A) is blocked by the first part 6A and the second part 6B, thus preventing the liquid component 5b from being blocked. Figure 4 The liquid component 5b is then transported to the electrode 3c. Here, the propagation direction of the elastic surface wave is the y-direction. Therefore, it is preferable to arrange the first portion 6A along the x-direction, which is not parallel to the y-direction. If the first portion 6A were arranged parallel to the x-direction, it would be unable to block the liquid component 5b. Therefore, it is necessary to arrange the first portion 6A non-parallel to the x-direction.

[0050] exist Figure 3 In the example, the first portion 6A is located in the region between the resonator 31 and the reflector 32 and is orthogonal to a straight line along the propagation direction (y-direction) of the elastic surface wave. This prevents the liquid component 5b from intruding between the resonator 31 and the reflector 32.

[0051] Figure 4 This is a schematic diagram of the sealing resin 5 penetrating the wiring region 10. In this example, taking the anti-liquid intrusion pattern 6 as an example, the liquid component 5b of the sealing resin 5 penetrates the wiring region 10 along the step of the wiring pattern 3d, that is, the side of the wiring pattern 3d. Assuming there is no anti-liquid intrusion pattern 6, the liquid component 5b will reach the electrode 3c and intrude into the area where the IDT is located. However, in the elastic wave device of this first embodiment, the anti-liquid intrusion pattern 6 can block the liquid component 5b and prevent it from reaching the electrode 3c.

[0052] Similarly, Figure 2The liquid intrusion prevention pattern 7 shown can block liquid components that intrude into the wiring region 10 along the wiring pattern 3b (especially along the y direction) and prevent the liquid components from reaching the electrode 3c.

[0053] Figure 2 and Figure 3 The example liquid ingress prevention patterns 6 and 7 have a curved shape in the top view. Therefore, even if a considerable amount of liquid enters the wiring area 10, the liquid ingress prevention patterns 6 and 7 can block the liquid. Figure 2 and Figure 3 In the example, taking the liquid ingress prevention pattern 6 as an example, although the liquid ingress prevention pattern 6 has a first part 6A and a second part 6B, the second part 6B can also be omitted. In other words, the liquid ingress prevention pattern 6 can also be a straight line shape.

[0054] As an example, the liquid ingress prevention patterns 6 and 7 are thinner than the wiring patterns 3b and 3d (that is, the width of the liquid ingress prevention patterns 6 and 7 is smaller than the width of the wiring patterns 3b and 3d). Making the liquid ingress prevention patterns 6 and 7 thinner increases design flexibility. Therefore, for example, the liquid ingress prevention patterns 6 and 7 can be designed closer to the IDT. Furthermore, by reducing the size of the liquid ingress prevention patterns 6 and 7, their impact on the characteristics of the elastic wave device can be reduced.

[0055] The liquid ingress prevention patterns 6 and 7 can be formed in the same process as the wiring patterns 3b and 3d. Forming the liquid ingress prevention patterns 6 and 7 and the wiring patterns 3b and 3d in the same process simplifies the manufacturing process. In another example, the liquid ingress prevention patterns 6 and 7 can be formed simultaneously with the electrode 3c using the same material. In this case, the IDT and the liquid ingress prevention patterns 6 and 7 are formed using the same material. In yet another example, the liquid ingress prevention patterns 6 and 7 are formed using an insulator. In this case, the impact on the characteristics of the elastic wave device can be reduced or eliminated.

[0056] As an example, the liquid-proof pattern 7 can be provided only on the side of the wiring pattern (i.e., the wiring area 10 of the rectangular area surrounded by dashed lines) that is approximately perpendicular to the propagation direction (y-direction) of the elastic surface wave of the electrode. In other words, in Figure 4 In the example, the liquid intrusion prevention pattern 7 can be provided only on the sides of the wiring pattern (i.e., the wiring area 10 of the rectangular area surrounded by dashed lines) that are parallel or substantially parallel to the x-direction. This is achieved through methods such as... Figure 4In the example, the anti-liquid intrusion pattern is provided, for example, as anti-liquid intrusion pattern 7, on the side of the wiring pattern that is substantially perpendicular to the propagation direction of the elastic surface wave (i.e., substantially perpendicular to the y-direction or substantially parallel to the x-direction), or the anti-liquid intrusion pattern is provided, for example, as anti-liquid intrusion pattern 6, on the side of the wiring pattern that is substantially parallel to the propagation direction of the elastic surface wave (i.e., substantially parallel to the y-direction or substantially perpendicular to the x-direction), once the liquid component from... Figure 4 Liquid components can enter the wiring region 10 from the top, bottom, left, or right sides along the positive y / negative y direction or along the positive x / negative x direction, preventing them from reaching the electrode 3c and reducing the negative impact of the liquid components on the device chip 3. Therefore, setting the anti-liquid intrusion pattern on the edge of the wiring pattern is effective.

[0057] Figure 5 This is a design schematic diagram of wiring patterns 3b and 3d. The wiring patterns 3b and 3d are the white portions. To incorporate liquid ingress prevention patterns within the complex wiring patterns 3b and 3d, it is necessary to reduce the size of these liquid ingress prevention patterns. Figure 5 Setting a liquid intrusion pattern at any position can prevent liquid components from reaching the electrode 3c.

[0058] Figure 6 This is a partially enlarged view of the elastic wave device of the comparative example. In this comparative example, because there is no pattern to prevent liquid intrusion, the liquid component 5b of the sealing resin 5 intrudes into the wiring area along the wiring pattern 3d, and the liquid component 5b reaches the area of ​​the IDT.

[0059] (Second Embodiment)

[0060] Figure 7 This is a schematic diagram of one side of the device chip in the second embodiment. The wiring pattern 3d connects the resonator 31 and the reflector 32. The liquid intrusion prevention pattern 6 prevents liquid components from reaching the reflector 32.

[0061] (Third Embodiment)

[0062] Figure 8 This is a schematic diagram of one side of the device chip in the third embodiment. The liquid intrusion prevention pattern 6 is connected to the upper wiring pattern 3d, and the liquid intrusion prevention pattern 8 is connected to the lower wiring pattern 3d. This prevents liquid components from... Figure 8 Enter from the left along the positive x-direction.

[0063] (Fourth Embodiment)

[0064] Figure 9This is a schematic diagram of one side of the device chip in the fourth embodiment. The liquid intrusion prevention pattern 6 does not have a curved portion (i.e., the second portion 6B), but only has the first portion 6A, which is straight. In this case, the simplified pattern can increase the degree of design freedom.

[0065] (Fifth Embodiment)

[0066] Figure 10 This is a schematic diagram of one side of the device chip 2 according to the fifth embodiment. Two liquid-proof patterns 6 are provided on one side of the wiring pattern 3d. Because there are two liquid-proof patterns 6, the intrusion of liquid components can be reliably suppressed. Alternatively, three or more liquid-proof patterns 6 may be provided on one side of the wiring pattern.

[0067] In the foregoing embodiments, although the focus has been on the description of a single device chip 3, in other embodiments, an elastic wave device may also be provided in which multiple device chips 3 are sealed with sealing resin 5. For example, the elastic wave device may include a second device chip forming a bandpass filter having multiple elastic surface wave resonators. In another embodiment, the elastic wave device includes a second device chip forming a bandpass filter having multiple acoustic thin-film resonators. In yet another embodiment, the elastic wave device may further include a trapezoidal filter having multiple parallel resonators.

[0068] This invention provides a module comprising any of the aforementioned elastic wave devices. The module includes a wiring substrate 2, an integrated circuit component IC, an elastic wave device, an inductor, and a sealing portion. As an example, the integrated circuit component IC is mounted inside the wiring substrate 2. The integrated circuit component IC includes a switching circuit and a low-noise amplifier. The elastic wave device is mounted on one side of the wiring substrate 2. The inductor is also mounted on one side of the wiring substrate 2. The inductor is mounted for impedance matching. For example, the inductor is an integrated passive device (IPD). The sealing portion seals multiple electronic components, including the device chip.

[0069] While at least one embodiment has been described above, it should be understood that various changes, modifications, or improvements will readily occur to those skilled in the art. These changes, modifications, or improvements are also part of this disclosure and fall within the scope of this invention.

[0070] It should be understood that the embodiments of the methods or apparatus described herein are not limited to the architecture and arrangement of the constituent components described above or illustrated in the accompanying drawings. The methods and apparatus can be installed or performed in other embodiments.

[0071] The embodiments described are for illustrative purposes only and are not intended to be limiting.

[0072] The descriptions and terms used in this disclosure are for illustrative purposes only and are not intended to be limiting. The use of "including," "possessing," "having," "comprise," and variations thereof here means to include the items listed below, their equivalents, and additional items.

[0073] The word “or”, or any word used in a description, may be interpreted as one, more than one, or all of the descriptive words.

[0074] The references to front, back, left, right, top, bottom, upper, lower, and horizontal and vertical are for ease of description and are not intended to limit the position and spatial configuration of any component in this invention. Therefore, the above description and drawings are merely exemplary.

Claims

1. An elastic wave device, characterized in that... Include: Wiring substrate; A device chip disposed on and electrically connected to the wiring substrate, the device chip includes a wiring pattern disposed on its side facing the wiring substrate, and a plurality of electrodes periodically formed in a wiring region which is a region where the wiring pattern is disposed, and a liquid intrusion prevention pattern protruding from the wiring pattern is provided in the wiring region at a position closer to the outer edge of the wiring region than the electrodes. and A sealing resin that seals the device chip and leaves a space between the wiring substrate and the device chip; The liquid ingress prevention pattern has a first portion that connects to the wiring pattern and extends substantially vertically, and a second portion that extends from the front end of the first portion toward the outer edge of the device chip.

2. The elastic wave device according to claim 1, characterized in that: The electrode has a resonator capable of exciting elastic surface waves and a reflector adjacent to the resonator, and the anti-liquid intrusion pattern is arranged in an orthogonal direction not parallel to the propagation direction of the elastic surface waves.

3. The elastic wave device according to claim 1 or 2, characterized in that: The wiring pattern includes bump pads and wiring portions electrically connected between the bump pads and the electrode, wherein the liquid ingress prevention pattern protrudes from the wiring portions.

4. The elastic wave device according to claim 1 or 2, characterized in that: The wiring pattern includes bump pads and wiring portions electrically connected between the bump pads and the electrode, and the liquid ingress prevention pattern protrudes from the bump pads.

5. The elastic wave device according to claim 2, characterized in that: The first portion is located in the region between the resonator and the reflector and lies on a straight line orthogonal to the propagation direction of the elastic surface wave.

6. The elastic wave device according to claim 1, characterized in that: The liquid intrusion prevention pattern has a curved shape in the top view.

7. The elastic wave device according to claim 5, characterized in that: The liquid intrusion prevention pattern has a curved shape in the top view.

8. The elastic wave device according to claim 1 or 2, characterized in that: Multiple liquid intrusion prevention patterns are formed on one side of the wiring pattern.

9. The elastic wave device according to claim 1, characterized in that: The liquid intrusion prevention pattern is only provided on the side of the wiring pattern that is approximately perpendicular to the propagation direction of the elastic surface wave of the electrode.

10. The elastic wave device according to claim 1 or 2, characterized in that: The width of the liquid intrusion prevention pattern is smaller than the width of the wiring pattern.

11. The elastic wave device according to claim 1 or 2, characterized in that: The device chip has a substrate formed by bonding a piezoelectric substrate and a support substrate, the support substrate being made of sapphire, silicon, alumina, spinel, crystal, or glass.

12. The elastic wave device according to claim 1 or 2, characterized in that: The sealing resin is a thermosetting resin.

13. The elastic wave device according to claim 1 or 2, characterized in that: The elastic wave device also includes another device chip that forms a bandpass filter with multiple elastic surface wave resonators.

14. The elastic wave device according to claim 1 or 2, characterized in that: The elastic wave device also includes another device chip forming a bandpass filter with multiple acoustic thin-film resonators.

15. An electronic module comprising the elastic wave device according to any one of claims 1 to 14.

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