A semiconductor module and a manufacturing method thereof

Abstract

The present invention provides a semiconductor module and a manufacturing method thereof, including: a metal substrate, an insulating layer disposed under the metal substrate, a copper foil layer fixed under the insulating layer, a protective layer disposed under the copper foil layer, a resistor, a capacitor, components, a heat sink disposed on the protective layer, a component semi-finished product disposed on the heat sink, pins disposed at one end of the copper foil layer, wires, a semiconductor circuit, connection lines, and an injection-molded package body. The wires are used to respectively connect the components and the component semi-finished products to the copper foil layer to achieve electrical connection. The resistor and the capacitor are arranged side by side. The semiconductor circuit is mounted on the copper foil layer to achieve electrical connection. The semiconductor circuit includes a plurality of semiconductor circuits connected in parallel, and the plurality of semiconductor circuits are connected through the connection lines. The present invention has low cost, good control effect, convenient replacement, and wide application range.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a semiconductor module and a manufacturing method thereof. Background Art

[0002] The semiconductor circuit IPM (Intelligent Power Module) not only integrates power switching devices and drive circuits together, but also has built-in fault detection circuits such as overvoltage, overcurrent, and overheating, and can send detection signals to the CPU or DSP for interruption processing. It consists of a high-speed and low-power consumption die, an optimized gate-level drive circuit, and a fast protection circuit. Even if a load accident or improper use occurs, the IPM itself will not be damaged. The IPM generally uses IGBT as a power switching element and has an integrated structure of a current sensor and a drive circuit.

[0003] The existing IPM semiconductor circuit IC drive control circuit, IPM sampling and amplification circuit, and PFC current protection circuit and other low-voltage control circuits and the inverter circuit composed of high-voltage power devices are laid out on the same board. At the same time, the existing IPM semiconductor circuits only integrate a single IPM module, and the integration of multiple IPM semiconductor circuits has not been realized yet. In the face of market miniaturization and low-cost competition, higher requirements are put forward for the high integration and high heat dissipation technologies of IPM semiconductor circuits.

[0004] Therefore, the above-mentioned existing semiconductor circuits have high manufacturing costs, large volumes, poor control effects, and are convenient to replace. Summary of the Invention

[0005] In view of the deficiencies of the above related technologies, the present invention proposes a semiconductor module and a manufacturing method thereof with low cost, good control effect, and convenient replacement.

[0006] To solve the above technical problems, in a first aspect, an embodiment of the present invention provides a semiconductor module, including: a metal substrate, an insulating layer disposed under the metal substrate, a copper foil layer fixed under the insulating layer, a protective layer disposed under the copper foil layer, a resistor, a capacitor, components, a heat sink disposed on the protective layer, component semi-finished products disposed on the heat sink, pins disposed at one end of the copper foil layer, wires, a semiconductor circuit, connection lines, and an injection-molded package body. The wires are used to electrically connect the components and the component semi-finished products to the copper foil layer respectively. The resistor and the capacitor are arranged side by side, and the semiconductor circuit is mounted on the copper foil layer to achieve electrical connection;

[0007] The semiconductor circuit includes a plurality of semiconductor circuits connected in parallel, and the plurality of semiconductor circuits are connected through the connection lines.

[0008] Preferably, mounting holes are provided on the encapsulation body, and the multiple semiconductor circuits connected in parallel are electrically connected through the pins passing through the mounting holes.

[0009] Preferably, the encapsulation body is made of plastic material.

[0010] Preferably, the semiconductor circuit includes: a PFC circuit, an inverter circuit, and a control circuit. The PFC circuit is connected to the inverter circuit. The collector of the PFC circuit is connected to an external electronic control board through the pin, the emitter of the PFC circuit is connected to the external electronic control board through the pin, the gate of the PFC circuit is electrically connected to the control circuit, and the inverter circuit is electrically connected to the control circuit.

[0011] Preferably, the inverter circuit includes: a first upper bridge arm, a second upper bridge arm, a third upper bridge arm, a first lower bridge arm, a second lower bridge arm, and a third lower bridge arm. The first upper bridge arm, the second upper bridge arm, and the third upper bridge arm are respectively connected in series with the first lower bridge arm, the second lower bridge arm, and the third lower bridge arm. The first upper bridge arm, the second upper bridge arm, the third upper bridge arm, the first lower bridge arm, the second lower bridge arm, and the third lower bridge arm are all provided with a collector, an emitter, and a gate. The collector and the emitter are both connected to the external electronic control board through the pins, and the gates are all electrically connected to the control circuit.

[0012] Preferably, the metal substrate is a metal aluminum substrate or a metal copper substrate.

[0013] In a second aspect, an embodiment of the present invention further provides a manufacturing method of the semiconductor module as described above. The manufacturing method includes the following steps:

[0014] S1. Use the metal substrate as a carrier;

[0015] S2. Set a copper foil layer on one side of the metal substrate to form a semiconductor circuit;

[0016] S3. Set a copper foil layer on the other side of the metal substrate to form a parallel circuit board;

[0017] S4. Perform a plating treatment on the surface of a metal copper foil with a preset shape to make a metal connector;

[0018] S5. Perform a plating treatment on the surface of a metal copper material with a preset shape to make pins;

[0019] S6. Coat an adhesive material with a certain fluidity at a preset position of the circuit wiring of the semiconductor circuit;

[0020] S7. Weld a chip on the surface of a metal heat sink;

[0021] S8. Place a circuit component on the bonding material;

[0022] S9. Cure the bonding material;

[0023] S10. Remove the flux and aluminum chips remaining on the metal substrate by means of spray and ultrasonic cleaning;

[0024] S11. Form an electrical connection between the circuit component and the circuit wiring through a bonding wire;

[0025] S12. Coat a bonding material with a certain fluidity at a preset position on the circuit board;

[0026] S13. Place circuit components on the bonding material;

[0027] S14. Cure the bonding material;

[0028] S15. Remove the flux and oxides remaining on the circuit board by means of spray and ultrasonic cleaning;

[0029] S16. Form an electrical connection between the circuit component and the circuit board through a bonding wire;

[0030] S17. Seal and fix the metal substrate, the frame and pins of the circuit board by means of plastic encapsulation;

[0031] S18. Conduct electrical parameter and appearance parameter tests through a testing device;

[0032] S19. Obtain a finished product after passing the test.

[0033] Compared with the related technologies, in the present invention, an insulating layer is provided under the metal substrate, a copper foil layer is provided under the insulating layer, a protective layer is provided under the copper foil layer, and resistors, capacitors, components, and heat sinks are provided on the protective layer; component semi-finished products are provided on the heat sink, pins, wires, semiconductor circuits, connection lines, and injection-molded packages are installed at one end of the copper foil layer, and the wires are used to electrically connect the components and the component semi-finished products to the copper foil layer respectively. The resistor and the capacitor are arranged side by side, and the semiconductor circuit is mounted on the copper foil layer to achieve electrical connection; the semiconductor circuit includes a plurality of parallel semiconductor circuits, and the plurality of semiconductor circuits are connected through the connection lines. Through this parallel connection method, the superposition of multiple semiconductor circuits can be realized, the electronic control can be miniaturized, and the electronic control layout can be made more flexible; at the same time, it can also be flexibly applied to various current-level occasions, and only by increasing the number of parallel semiconductor circuits can the working requirements of a larger current be achieved; not only can the semiconductor circuits be flexibly replaced and increased or decreased to adapt to different power usage scenarios, but also when one of the semiconductor circuits fails, only the failed one needs to be replaced without scrapping the entire product, which not only reduces the cost but also improves the rework efficiency; through this parallel connection process, only one internal control circuit is required to control multiple parallel semiconductor circuits, which reduces the production cost and simplifies the process and technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The present invention will be described in detail below with reference to the drawings. Through the detailed description in combination with the following drawings, the above or other aspects of the present invention will become clearer and easier to understand. In the drawings:

[0035] Figure 1 is a schematic structural diagram of the semiconductor module of the present invention;

[0036] Figure 2 is a circuit diagram of the semiconductor circuit of the present invention;

[0037] Figure 3 is Figure 2 an enlarged view of the PFC circuit in

[0038] Figure 4 is Figure 2 an enlarged view of the inverter circuit in

[0039] Figure 5 is Figure 2 an enlarged view of the control circuit in

[0040] Figure 6 is a flowchart of the manufacturing method of the semiconductor module of the present invention.

[0041] In the figure, 01 is a metal substrate, 02 is an insulating layer, 03 is a copper foil layer, 04 is a protective layer, 05 is a resistor, 06 is a capacitor, 07 are components, 08 is a semi-finished component, 09 is a heat sink, 10 are pins, 11 is a package body, 12 is a wire, 13 is a connection line, 14 is a semiconductor circuit, 15 is a PFC circuit, 16 is an inverter circuit, and 17 is a control circuit. Specific Embodiment

[0042] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0043] The specific embodiments / examples described herein are specific embodiments of the present invention and are used to illustrate the concept of the present invention. They are all explanatory and exemplary and should not be construed as limiting the embodiments of the present invention and the scope of the present invention. Except for the embodiments described herein, those skilled in the art can also adopt other obvious technical solutions based on the content disclosed in the claims and the specification of this application. These technical solutions include technical solutions that make any obvious substitutions and modifications to the embodiments described herein, and all fall within the protection scope of the present invention.

[0044] Embodiment 1

[0045] Please refer to Figures 1 - 5 As shown, the present invention provides a semiconductor module, including: a metal substrate 01, an insulating layer 02 provided under the metal substrate 01, a copper foil layer 03 fixed under the insulating layer 02, a protective layer 04 provided under the copper foil layer 03, a resistor 05, a capacitor 06, components 07 provided on the protective layer 04, a heat sink 09, a semi-finished component 08 provided on the heat sink 09, pins 10 provided at one end of the copper foil layer 03, a wire 12, a semiconductor circuit 14, a connection line 13, and a package body 11 formed by injection molding. The wire 12 is used to electrically connect the components 07 and the semi-finished component 08 to the copper foil layer 03 respectively. The resistor 05 and the capacitor 06 are arranged side by side. The semiconductor circuit 14 is mounted on the copper foil layer 03 to achieve electrical connection. The semiconductor circuit 14 includes a plurality of semiconductor circuits 14 connected in parallel, and the plurality of semiconductor circuits 14 are connected through the connection line 13.

[0046] Specifically, the metal substrate 01 serves as the carrier of the semiconductor circuit 14 and plays a role in dissipating heat for the power device. The insulating layer 02 is used to prevent the circuit wiring layer from being energized with the metal substrate 01, resulting in the risks of internal circuit short - circuit and leakage. The copper foil layer 03 is etched to form the required circuit, thus making the circuit wiring layer. At the same time, as a welding medium (pad), it realizes the electrical connection between the surface - mounted components 07 and the circuit. The protective layer 04, also known as the solder mask layer, prevents tinning where it should not be, increases the voltage resistance between circuits, and prevents short - circuit caused by circuit oxidation or contamination, playing a protective role for the circuit. The chip resistor 05 is used to be connected at the gate of the IGBT chip in the semiconductor circuit 14, and limits the IGBT switching speed by current limiting. The chip capacitor 06 plays roles of filtering, coupling, and bootstrap in the semiconductor circuit 14; the component 07 is the chip required to form the internal functional circuit of the semiconductor circuit 14; the semi - finished component 08 is formed by mounting the high - voltage power component 07 with high heat dissipation requirements on a small heat sink 09. The heat sink 09 uses the process of copper material with silver plating on the surface, which can achieve better fitting between the surface components 07 and the heat sink 09 and improve the heat dissipation capacity.

[0047] Among them, for the pin 10, the material is C194(-1 / 2H) (chemical composition: Cu(≧97.0), Fe: 2.4, P: 0.03, Zn: 0.12) or KFC(-1 / 2H) (chemical composition: Cu(≧99.6), Fe: 0.1(0.05 - 0.15), P: 0.03(0.025 - 0.04)). Through machining, the 0.5 - mm copper plate is stamped into the required shape, and then nickel is plated on the surface with a thickness of 0.1 - 0.5 um and then tin is plated with a thickness of 2 - 5 um.

[0048] The package 11 is used to package the internal components. The wire 12 (the wire 12 is generally made of materials such as gold, aluminum, and copper) is used to realize the electrical connection between the components 07 in the circuit. The parallel semiconductor circuit 14 is connected to the connection line 13, which realizes the electrical connection between the input - output circuits corresponding to the control circuit 17, the inverter circuit 16, and the PFC circuit 15 of the first semiconductor circuit 14 and the input - output circuits corresponding to the parallel semiconductor circuit 14. Generally, corresponding input - output circuits are left on the back of the metal substrate of the first semiconductor circuit 14, and corresponding mounting hole positions are left on the surface of the package 11. The parallel semiconductor circuit 14 is directly inserted into the corresponding hole positions through the pins 10 to contact the circuit on the back of the metal substrate of the first semiconductor circuit 14, thus realizing the electrical connection.

[0049] Specifically, an insulating layer 02 is provided under the metal substrate 01, a copper foil layer 03 is provided under the insulating layer 02, a protective layer 04 is provided under the copper foil layer 03, and a resistor 05, a capacitor 06, components 07, and a heat sink 09 are provided on the protective layer 04; a component semi-finished product 08 is provided on the heat sink 09, and pins 10, wires 12, a semiconductor circuit 14, a connection line 13, and an injection-molded package 11 are installed at one end of the copper foil layer 03. The wires 12 are used to electrically connect the components 07 and the component semi-finished product 08 to the copper foil layer 03 respectively. The resistor 05 and the capacitor 06 are arranged side by side, and the semiconductor circuit 14 is mounted on the copper foil layer 03 to achieve electrical connection; the semiconductor circuit 14 includes a plurality of parallel semiconductor circuits 14, and the plurality of semiconductor circuits 14 are connected through the connection line 13. Through this parallel connection method, the superposition of multiple semiconductor circuits 14 can be realized, the electronic control is miniaturized, and the electronic control layout is made more flexible; at the same time, it can also be flexibly applied to various current-level occasions, and only by increasing the parallel number of semiconductor circuits 14 can the working requirements of a larger current be achieved; not only can the semiconductor circuits 14 be flexibly replaced and increased or decreased to adapt to different power usage scenarios, but also when one of the semiconductor circuits 14 fails, only the failed one needs to be replaced without scrapping the entire product, which not only reduces the cost but also improves the rework efficiency; through this parallel connection process, only one internal control circuit 17 is required to control multiple parallel semiconductor circuits 14, which reduces the production cost and simplifies the process and technology.

[0050] In this embodiment, mounting holes are provided on the package 11, and the plurality of parallel semiconductor circuits 14 are electrically connected by passing the pins 10 through the mounting holes. By leaving corresponding input and output circuits on the back of the metal substrate of the first semiconductor circuit 14 and leaving corresponding mounting holes on the surface of the package 11, the parallel semiconductor circuits 14 are directly inserted into the corresponding holes through the pins 10 to contact the circuit on the back of the metal substrate of the first semiconductor circuit 14, thereby achieving electrical connection.

[0051] In this embodiment, the package 11 is made of a plastic material. The package 11 is a powder molding compound made of epoxy resin as the matrix resin, high-performance phenolic resin as the curing agent, adding silica powder, etc. as fillers, and adding various additives. It is extruded into the mold cavity by a heat transfer molding method and the semiconductor chip therein is embedded, and at the same time, it is cross-linked and cured to form a device with a certain external structure.

[0052] In this embodiment, the semiconductor circuit 14 includes: a PFC circuit 15, an inverter circuit 16, and a control circuit 17. The PFC circuit 15 is connected to the inverter circuit 16. The collector of the PFC circuit 15 is connected to an external electronic control board through the pin 10, the emitter of the PFC circuit 15 is connected to the external electronic control board through the pin 10, the gate of the PFC circuit 15 is electrically connected to the control circuit 17, and the inverter circuit 16 is electrically connected to the control circuit 17. By controlling the PFC circuit 15 and the inverter circuit 16 through the control circuit 17, only one internal control circuit 17 is required to control multiple parallel semiconductor circuits 14, reducing the production cost and simplifying the process and technology.

[0053] In this embodiment, the inverter circuit 16 includes: a first upper bridge arm IGBT1, a second upper bridge arm IGBT2, a third upper bridge arm IGBT3, a first lower bridge arm IGBT3, a second lower bridge arm IGBT4, and a third lower bridge arm IGBT5. The first upper bridge arm IGBT1, the second upper bridge arm IGBT2, and the third upper bridge arm IGBT3 are respectively connected in series with the first lower bridge arm IGBT4, the second lower bridge arm IGBT5, and the third lower bridge arm IGBT6. The first upper bridge arm IGBT1, the second upper bridge arm IGBT2, the third upper bridge arm IGBT3, the first lower bridge arm IGBT4, the second lower bridge arm IGBT5, and the third lower bridge arm IGBT6 are all provided with a collector, an emitter, and a gate. The collector and the emitter are both connected to the external electronic control board through the pin 10, and the gates are all electrically connected to the control circuit 17.

[0054] Specifically, the semiconductor circuit 14 is composed of a PFC circuit 15, an inverter circuit 16, and a control circuit 17, and the parallel semiconductor circuit 14 is composed of a PFC circuit 15 and an inverter circuit 16. PFC circuit 15: It is composed of a collector, an emitter, and a gate; the collector is connected to the collector of the parallel semiconductor PFC circuit 15 and connected to the external electronic control board through the pin 10; the emitter is connected to the emitter of the parallel semiconductor PFC circuit 15 and connected to the external electronic control board through the pin 10; the gate is connected to the gate of the parallel semiconductor PFC circuit 15 and then uniformly connected to the PFCOUT interface of the control circuit 17. The inverter circuit 16 is divided into upper three bridges U, V, W and lower three bridges -U, -V, -W. Each bridge is composed of a collector, an emitter, and a gate, and each pole is connected to the corresponding pole of the parallel semiconductor inverter circuit 16. After connection, the collector and the emitter are connected to the external electronic control through the pin 10, and the gates are uniformly connected to the corresponding control interfaces of the control circuit 17.

[0055] Optionally, the control circuit 17 is a Driver IC control chip, and the control effect is good.

[0056] In this embodiment, the metal substrate 01 is a metal aluminum substrate or a metal copper substrate. The metal aluminum substrate or the metal copper substrate has good electrical conductivity.

[0057] Embodiment Two

[0058] Please refer to Figures 1 - 6 As shown, the embodiment of the present invention further provides a manufacturing method of a semiconductor module as in Embodiment One. The manufacturing method includes the following steps:

[0059] S1. Use the metal substrate 01 as a carrier;

[0060] S2. Set a copper foil layer 03 on one side of the metal substrate 01 to form a semiconductor circuit 14;

[0061] S3. Set a copper foil layer 03 on the other side of the metal substrate 01 to form a parallel circuit board;

[0062] S4. Perform a plating treatment on the surface of a metal copper foil with a preset shape to make a metal connector;

[0063] S5. Perform a plating treatment on the surface of a metal copper material with a preset shape to make a pin 10;

[0064] S6. Coat an adhesive material with a certain fluidity at a preset position of the circuit wiring of the semiconductor circuit 14;

[0065] S7. Weld a chip on the surface of the metal heat sink 09;

[0066] S8. Place circuit components on the adhesive material;

[0067] S9. Cure the adhesive material;

[0068] S10. Remove the soldering flux and aluminum chips remaining on the metal substrate 01 by means of spraying and ultrasonic cleaning;

[0069] S11. Form an electrical connection between the circuit components and the circuit wiring through a bonding wire;

[0070] S12. Coat an adhesive material with a certain fluidity at a preset position of the circuit board;

[0071] S13. Place circuit components 07 on the adhesive material;

[0072] S14. Cure the adhesive material;

[0073] S15. Remove the soldering flux and oxides remaining on the circuit board by means of spraying and ultrasonic cleaning;

[0074] S16. Form an electrical connection between the circuit element and the circuit board through a binding wire;

[0075] S17. Seal and fix the metal substrate, the frame of the circuit board, and the pin 10 through a plastic encapsulation method;

[0076] S18. Perform electrical parameter and appearance parameter tests through a testing device;

[0077] S19. Obtain a finished product after passing the test.

[0078] Specifically, use the metal substrate 01 as a carrier; set the copper foil layer 03 on one side of the metal substrate 01 to form the semiconductor circuit 14 process; set the copper foil layer 03 on the other side of the metal substrate 01 to form a parallel circuit process; perform a plating treatment on the surface of a specific-shaped metal copper foil to make a metal connector process; perform a plating treatment on the surface of a specific-shaped metal copper material to make the pin 10 process; coat an adhesive material with a certain fluidity at a specific position of the circuit wiring process; weld a chip on the surface of the metal heat sink 09 process; place a circuit element on the adhesive material process; cure the adhesive material process; remove contaminants such as flux and aluminum chips remaining on the metal aluminum substrate through cleaning methods such as spraying and ultrasonic cleaning; form an electrical connection between the circuit element and the circuit wiring through a binding wire; coat an adhesive material with a certain fluidity at a specific position of the circuit board process; place a circuit component 07 on the adhesive material process; cure the adhesive material process; remove contaminants such as flux and oxides remaining on the circuit board through cleaning methods such as spraying and ultrasonic cleaning; form an electrical connection between the circuit element and the circuit board through a binding wire; seal and fix the above-mentioned metal substrate, the circuit board frame, and the pin 10 through a plastic encapsulation method, so that a specific position of the circuit wiring at a specific potential is not filled with the resin; perform necessary electrical parameter and appearance parameter tests through a testing device process; after passing the test, manufacture the semiconductor circuit 14 of the present invention.

[0079] Through this parallel connection method, the superposition of multiple semiconductor circuits 14 can be realized, the electrical control is miniaturized, the electrical control layout is more flexible, and the cost is lower; through this method, it can be flexibly applied to various current-level occasions, and only by increasing the parallel connection number of the semiconductor circuits 14 can the working requirements of a larger current be achieved; because this parallel connection method can be flexibly replaced and increased or decreased, it can not only adapt to different power usage scenarios, but also when one of the semiconductor circuits 14 fails, only need to replace it, without scrapping the entire product, which not only reduces the cost, but also improves the rework efficiency. Through this parallel connection process, only one control circuit 17 is required to complete the control of multiple parallel semiconductor circuits 14, reducing the production cost and simplifying the process and technology.

[0080] In this embodiment, the manufacturing process of the first semiconductor circuit 14 is as follows: First, the finished metal substrate is placed on a special carrier by an automated device or manually (the carrier can be made of materials such as aluminum, composite stone, ceramic, PPS, etc. that can withstand temperatures above 200°C). The semiconductor inverter circuit 16 chip is mounted on the component 07 mounting position reserved on the copper foil circuit layer of the finished metal substrate by brushing solder paste or dispensing silver paste through an automatic die bonding device (DA machine). The high-voltage power device (PFC circuit 15) is mounted on the copper heat sink 09 with a silver-plated surface by a soft solder die bonder to form a semi-finished component 08. The resistor and capacitor components and the semi-finished component 08 are mounted on the component 07 mounting position by an automatic SMT device. The lead frame is placed on the corresponding welding position of the metal substrate by a manipulator or manually. The entire semi-finished product, including the carrier, is passed through a reflow oven to weld all the components 07 to the corresponding mounting positions. The welding quality of the components 07 is detected by a visual inspection AOI device. Foreign substances such as flux and aluminum chips remaining on the insulating substrate are removed by cleaning methods such as spraying and ultrasonic cleaning. The circuit components and the circuit wiring are electrically connected through bonding wires. The substrate circuit is encapsulated in a specific mold by an encapsulation device (corresponding mounting holes should be left after the previous semiconductor circuit 14 is encapsulated). Then, the product is marked by laser marking. The product is subjected to post-curing stress relief treatment in a high-temperature oven. The connecting bars and false pins 10 of the pins 10 are cut off and shaped into the required shape by a trimming and forming device. Finally, after electrical parameter testing, the final qualified product is formed. The manufacturing process of the subsequent parallel semiconductor circuit 14 is the same as the above, except that the manufacturing process of the control circuit 17 is omitted.

[0081] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the scope of the claims of the present invention.

Claims

1. A semiconductor module, characterized in that, Including: A metal substrate, an insulating layer disposed under the metal substrate, a copper foil layer fixed under the insulating layer, a protective layer disposed under the copper foil layer, resistors, capacitors, components, a heat sink disposed on the protective layer, semi-finished components disposed on the heat sink, pins disposed at one end of the copper foil layer, wires, a semiconductor circuit, connection lines, and an injection-molded package body. The wires are used to electrically connect the components and the semi-finished components to the copper foil layer respectively. The resistor and the capacitor are arranged side by side. The semiconductor circuit is mounted on the copper foil layer to achieve electrical connection; The semiconductor circuit includes a plurality of parallel semiconductor circuits, and the plurality of semiconductor circuits are connected by the connection lines; Mounting hole positions are provided on the package body, and the plurality of parallel semiconductor circuits are electrically connected by passing the pins through the mounting hole positions; The semiconductor circuit includes: a PFC circuit, an inverter circuit, and a control circuit. The PFC circuit is connected to the inverter circuit. The collector of the PFC circuit is connected to an external electric control board through the pin. The emitter of the PFC circuit is connected to the external electric control board through the pin. The gate of the PFC circuit is electrically connected to the control circuit. The inverter circuit is electrically connected to the control circuit; The inverter circuit includes: a first upper bridge arm, a second upper bridge arm, a third upper bridge arm, a first lower bridge arm, a second lower bridge arm, and a third lower bridge arm. The first upper bridge arm, the second upper bridge arm, and the third upper bridge arm are respectively connected in series with the first lower bridge arm, the second lower bridge arm, and the third lower bridge arm. The first upper bridge arm, the second upper bridge arm, the third upper bridge arm, the first lower bridge arm, the second lower bridge arm, and the third lower bridge arm are all provided with a collector, an emitter, and a gate. The collector and the emitter are both connected to the external electric control board through the pins. The gates are all electrically connected to the control circuit.

2. The semiconductor module according to claim 1, wherein The package body is made of a plastic material.

3. The semiconductor module according to claim 1, wherein The metal substrate is a metal aluminum substrate or a metal copper substrate.

4. A manufacturing method of a semiconductor module according to any one of claims 1 to 3, characterized in that, The manufacturing method includes the following steps: S1. Use the metal substrate as a carrier; S2. Set a copper foil layer on one side of the metal substrate to form a semiconductor circuit; S3. Set a copper foil layer on the other side of the metal substrate to form a parallel circuit board; S4. Perform a plating treatment on the surface of a metal copper foil with a preset shape to make a metal connector; S5. Perform a plating treatment on the surface of a metal copper material with a preset shape to make pins; S6. Coat an adhesive material with a certain fluidity at a preset position of the circuit wiring of the semiconductor circuit; S7. Solder a chip on the surface of the metal heat sink; S8. Place circuit components on the adhesive material; S9. Cure the adhesive material; S10. Remove the flux and aluminum chips remaining on the metal substrate by means of spraying and ultrasonic cleaning; S11. Form an electrical connection between the circuit components and the circuit wiring through a bonding wire; S12. Coat an adhesive material with a certain fluidity at a preset position of the circuit board; S13. Place circuit components on the adhesive material; S14. Cure the bonding material; S15. Remove the flux and oxides remaining on the circuit board by means of spray and ultrasonic cleaning; S16. Form an electrical connection between the circuit element and the circuit board through a bonding wire; S17. Seal and fix the metal substrate, the frame and pins of the circuit board by means of plastic encapsulation; S18. Perform electrical parameter and appearance parameter tests through a testing device; S19. Obtain a finished product after passing the tests.

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