A chip connector and a power module

Abstract

The present application discloses a chip connector and a power module. The chip connector is used for a power module, and the power module includes a chip connector, a substrate, and a plurality of power chips disposed on the substrate. The chip connector includes: a first connection portion for electrically connecting the top electrodes on the side of the plurality of power chips facing away from the substrate to achieve parallel connection of the plurality of power chips; and a second connection portion having one end electrically connected to the first connection portion and the other end connected to the substrate. In this way, the current-carrying performance and reliability can be improved.

Description

Technical Field

[0001] This application relates to the field of electronic technology, and particularly to a power module. Background Art

[0002] A power module refers to a special power device made by connecting multiple power semiconductor devices according to a certain circuit topology structure and integrating them with peripheral auxiliary circuits in the same insulating resin package. At present, due to advantages such as high reliability, small volume, and the ability to simplify system design, power modules have been widely used in various power conversion fields.

[0003] In recent years, with the continuous development of power semiconductor technology, power module technology has also been substantially improved and developed rapidly. So far, various power modules with different architectures and processes have been developed, such as diode power modules, thyristor power modules, MOSFET power modules, and IGBT power modules, etc., which have promoted the faster and better development of power module technology.

[0004] However, the current-carrying performance and reliability of traditional power modules still need to be improved. Summary of the Invention

[0005] This application provides a chip connector and a power module to improve the current-carrying performance and reliability.

[0006] To solve the above technical problems, this application proposes a chip connector. The chip connector is used for a power module, and the power module includes a chip connector, a substrate, and multiple power chips disposed on the substrate. The chip connector includes: a first connection portion for electrically connecting the top electrodes on the side of the multiple power chips facing away from the substrate to achieve parallel connection of the multiple power chips; a second connection portion having one end electrically connected to the first connection portion and the other end connected to the substrate.

[0007] To solve the above technical problems, this application proposes a power module. The power module includes: a substrate; multiple power chips disposed on the substrate, and the chip connector according to any one of the above, disposed on the side of the power chips facing away from the substrate and connected to the top electrodes of the multiple power chips to achieve parallel connection of the multiple power chips.

[0008] Differences from the prior art: The chip connector of the present application is used for a power module, which includes a chip connector, a substrate, and a plurality of power chips disposed on the substrate. The chip connector includes: a first connection portion and a second connection portion. Among them, the first connection portion is used to electrically connect the top electrodes on the side of the plurality of power chips facing away from the substrate to achieve parallel connection of the plurality of power chips; one end of the second connection portion is electrically connected to the first connection portion, and the other end of the second connection portion is connected to the substrate. By connecting the top electrodes of the plurality of power chips through the first connection portion and connecting the first connection portion to the substrate through the second connection portion, the present application can not only achieve parallel connection of the plurality of power chips, but also improve the current-carrying capacity and reliability compared with the electrical connection of the top electrodes of the power chips using bonding wires in traditional power modules. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings, where:

[0010] Figure 1 is a schematic structural diagram of an embodiment of the chip connector of the present application;

[0011] Figure 2 is a schematic structural diagram of another embodiment of the chip connector of the present application;

[0012] Figure 3 is a schematic structural diagram of an embodiment of the power module of the present application;

[0013] Figure 4 is Figure 3 a schematic structural diagram of other structures of the power module except the chip connector in the embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0014] The following will further describe the present application in detail in conjunction with the drawings and embodiments. It should be particularly noted that the following embodiments are only used to illustrate the present application, but do not limit the scope of the present application. Similarly, the following embodiments are only some embodiments of the present application rather than all embodiments. All other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0015] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "coupled" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to specific situations.

[0016] In the embodiments of the present application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0017] In the description of this specification, the descriptions with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the embodiments of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without conflict, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0018] The present application first proposes a power module, such as Figure 1 shown Figure 1 is a schematic structural diagram of an embodiment of a chip connector of the present application. The chip connector 5 of this embodiment is used for a power module. The power module includes a chip connector 5, a substrate, and a plurality of power chips disposed on the substrate. The chip connector 5 of this embodiment includes: a first connection portion 51 and a second connection portion 52. Among them, the first connection portion 51 is used to electrically connect the top electrodes on the side of the plurality of power chips facing away from the substrate to realize the parallel connection of the plurality of power chips; one end of the second connection portion 52 is electrically connected to the first connection portion 51, and the other end of the second connection portion 52 is connected to the substrate.

[0019] In this embodiment, the top electrodes of multiple power chips are connected through the first connection portion 51 of the chip connector 5, and the first connection portion 51 is connected to the substrate through the second connection portion 52. This not only enables the parallel connection of multiple power chips, but also improves the current-carrying capacity and reliability compared with the electrical connection of the top electrodes of power chips achieved by bonding wires in traditional power modules.

[0020] Optionally, the power module of this embodiment further includes an electrode layer disposed on the substrate. The chip connector 5 of this embodiment further includes a third connection portion 53. One end of the third connection portion 53 is electrically connected to the first connection portion 51, and the other end of the third connection portion 53 is electrically connected to the other end of the second connection portion 52. That is, the chip connector 5 includes a first connection portion 51, a second connection portion 52, and a third connection portion 53 that are sequentially electrically connected. The first connection portion 51 is electrically connected to the top electrode of the power chip, and the third connection portion 53 is electrically connected to the electrode layer, realizing the parallel arrangement of multiple power chips.

[0021] Wherein, the distance between the third connection portion 53 and the substrate is greater than the distances between the first connection portion 51 and the second connection portion 52 and the substrate, and the projection of the third connection portion 53 on the substrate is located at the gap between the power chip and the electrode layer.

[0022] The corresponding part of the chip connector 5 of this embodiment at the gap between the power chip and the electrode layer is bent. This can not only reduce the solder stress introduced by the deformation of the connection part with the substrate, i.e., the second connection portion 52, but also increase the distance between the second connection portion 52 and the substrate because the corresponding part is bent away from the substrate side, so as to ensure heat dissipation and insulation performance from other components on the substrate.

[0023] Specifically, the third connection portion 53 of this embodiment can be arched for easy processing.

[0024] Optionally, the electrode layer can include a first sub-electrode layer and a second sub-electrode layer. Multiple power chips are arranged along a first direction, and the first sub-electrode and the second sub-electrode are arranged along the first direction on both sides of the multiple power chips. The third connection portion 53 of this embodiment includes: a first sub-connection portion a1 and a second sub-connection portion a2. Wherein, one end of the first sub-connection portion a1 is electrically connected to one end of the first connection portion 51; one end of the second sub-connection portion a2 is electrically connected to the other end of the first sub-connection portion a1; the second connection portion 52 of this embodiment includes: a third sub-connection portion b1 and a fourth sub-connection portion b2. Wherein, one end of the third sub-connection portion b1 is electrically connected to the other end of the first sub-connection portion a1, and the other end of the third sub-connection portion b1 is electrically connected to the first sub-electrode layer; one end of the fourth sub-connection portion b2 is electrically connected to the other end of the second sub-connection portion a2, and the other end of the fourth sub-connection portion b2 is electrically connected to the second sub-electrode layer.

[0025] In this embodiment, the top electrodes of multiple power chips are led out through the first sub - electrode layer and the second sub - electrode layer on both sides, which can improve the symmetry of the structure, reduce the difference in the commutation loop areas of multiple upper - arm chips 9, and reduce the parasitic inductance.

[0026] Optionally, the first connecting portion 51, the second connecting portion 52 and the third connecting portion 53 of this embodiment are plate - shaped and integrally arranged, which can improve the current - carrying performance and reliability.

[0027] Optionally, an opening 54 is provided on the first connecting portion 51 of this embodiment, and the opening 54 is correspondingly arranged with the interval between two adjacent power chips, that is, the opening 54 is located above the interval between two adjacent power chips, which can reduce the stress on the power chips and the top solder of the power chips during the temperature cycle.

[0028] In this embodiment, by setting the opening 54 on the first connecting portion 51, it can improve the problems that large - area connecting parts have large deformation during the temperature cycle due to their large coefficient of thermal expansion, resulting in large stress on the welding layer between them and the power chips, and accelerating the fatigue damage of the solder layer. It can reduce the thermal stress on the top solder of the power chips during the temperature cycle and the solder thermal stress introduced by the deformation of the connection part with the substrate, thus improving the reliability of the power module.

[0029] For the opening 54 on the first connecting portion 51, its aperture and pitch are as small as possible, and the actual size depends on the processing technology.

[0030] Optionally, the opening 54 of this embodiment can be a circular opening for easy processing. In other embodiments, the opening can also be a wedge - shaped opening or a square opening, etc.

[0031] Optionally, the chip connector 5 of this embodiment can be a pre - formed metal sheet, such as a copper sheet or a copper - molybdenum alloy sheet, etc.

[0032] Among them, the chip connector 5 of this embodiment can be connected to the power chip and the substrate (electrode layer) through connection methods such as welding.

[0033] This application further proposes a chip connector of another embodiment, such as Figure 2 shown Figure 2 is a schematic structural diagram of another embodiment of the chip connector of this application. The difference between the chip connector 6 of this embodiment and the above - mentioned chip connector 5 is that the second connecting portion 52 and the third connecting portion 53 of the above - mentioned chip connector 5 are arranged in the same direction as the first connecting portion 51, while the second connecting portion 62 and the third connecting portion 63 of the chip connector 6 of this embodiment are perpendicular to the first connecting portion 61.

[0034] Specifically, multiple power chips are arranged along a first direction, and the electrode layer is arranged along a second direction with the multiple power chips, where the second direction is perpendicular to the first direction. The chip connector 6 includes: multiple second connection parts 62 and multiple third connection parts 63. The multiple second connection parts 62, the multiple third connection parts 63, and the multiple power chips are arranged in one-to-one correspondence. One end of the third connection part 63 is vertically and electrically connected to the first connection part 61, the other end of the third connection part 63 is electrically connected to one end of the second connection part 62, and the other end of the second connection part 62 is electrically connected to the electrode layer.

[0035] The chip connector 6 of this embodiment can achieve the electrical connection between the vertically arranged power chips and the electrode layer.

[0036] The present application further provides a power module, as Figure 3 and Figure 4 shown, Figure 3 is a schematic structural diagram of an embodiment of the power module of the present application; Figure 4 is Figure 3 a schematic structural diagram of other structures of the power module in the embodiment except for the chip connector. The power module of this embodiment includes: a substrate 1, multiple power chips, and a chip connector. Among them, the multiple power chips are arranged on the substrate 1, and the chip connector is arranged on the side of the power chips facing away from the substrate 1 and is connected to the top electrodes of the multiple power chips to achieve the parallel connection of the multiple power chips.

[0037] For the specific structure of the chip connector, reference can be made to the above embodiment.

[0038] Specifically, the power chip of this embodiment includes: a plurality of upper arm chips 9 and a plurality of lower arm chips 10, and the power module further includes: an upper arm driving metal layer 7, a positive electrode layer 2, a lower arm driving metal layer 8, a negative electrode layer 3, and an AC side electrode layer 4. The power module includes two chip connectors (i.e., chip connector 5 and chip connector 6); the plurality of upper arm chips 9, the upper arm driving metal layer 7, the positive electrode layer 2, the plurality of lower arm chips 10, the negative electrode layer 3, the lower arm driving metal layer 8, and the AC side electrode layer 4 are all disposed on the substrate 1; wherein, the upper arm chip 9 is provided with a first control end, a first switching end, and a second switching end; the upper arm driving metal layer 7 is electrically connected to the first control end of the upper arm chip 9 and the first switching end of the upper arm chip 9; the positive electrode layer 2 is connected to the second switching end of the upper arm chip 9; the lower arm chip 10 is provided with a second control end, a third switching end, and a fourth switching end; the lower arm driving metal layer 8 is electrically connected to the second control end of the lower arm chip 10 and the third switching end of the lower arm chip 10; the negative electrode layer 3 is connected to the third switching end of the lower arm chip 10; the AC side electrode layer 4 is connected to the first switching end of the upper arm chip 9 and the fourth switching end of the lower arm chip 10; the plurality of upper arm chips 9, the upper arm driving metal layer 7, the positive electrode layer 2, the plurality of lower arm chips 10, the negative electrode layer 3, the lower arm driving metal layer 8, and the AC side electrode layer 4 are all disposed on the substrate 1, and the upper arm driving metal layer 7, the positive electrode layer 2, the lower arm driving metal layer 8, the negative electrode layer 3, and the AC side electrode layer 4 are arranged on the same layer.

[0039] Optionally, the AC lead-out end point of the AC side electrode layer 4 is located on the perpendicular line of the connection line between two adjacent upper arm chips 9 and on the perpendicular line of the connection line between two adjacent lower arm chips 10. The positive electrode lead-out end point of the positive electrode layer 2 is arranged close to the upper arm chip 9, and the negative electrode lead-out end point of the negative electrode layer 3 is arranged close to the lower arm chip 10.

[0040] In this embodiment, the commutation circuit corresponding to the upper arm chip 9 is: positive electrode lead-out end point - positive electrode layer 2 - upper arm chip 9 - AC side electrode layer 4 - AC lead-out end point (or in reverse). The commutation circuit corresponding to the lower arm chip 10 is: AC side electrode layer 4 - AC lead-out end point - lower arm chip 10 - negative electrode layer 3 - negative electrode lead-out end point (or in reverse).

[0041] Therefore, in this embodiment, the AC lead-out endpoints of the AC-side electrode layer 4 are arranged on the vertical lines of the connections between two adjacent upper-bridge-arm chips 9 and on the vertical lines of the connections between two adjacent lower-bridge-arm chips 10, which can make two adjacent upper-bridge-arm chips 9 symmetric with respect to the AC lead-out endpoints, and two adjacent lower-bridge-arm chips 10 symmetric with respect to the AC lead-out endpoints. This can reduce the difference between the commutation loop areas of two adjacent upper-bridge-arm chips 9 and reduce the difference between the commutation loop areas of two adjacent lower-bridge-arm chips 10, so as to make the operating conditions and service lives of all power chips (upper and lower bridge-arm chips) consistent and improve the switching performance of the power module. Moreover, the positive electrode lead-out endpoint of the positive electrode layer 2 is arranged close to the upper-bridge-arm chip 9, and the negative electrode lead-out endpoint of the negative electrode layer 3 is arranged close to the lower-bridge-arm chip 10, which can make the layout compact, reduce the commutation loop area, thereby reducing the parasitic inductance of the power module, further reducing the switching loss and voltage spike during switching, and improving the switching performance of the power module.

[0042] In an application scenario, the upper-bridge-arm chip 9 of this embodiment may include an IGBT device. Its gate electrode is electrically connected to the upper-bridge-arm driving metal layer 7 as the first control end of the upper-bridge-arm chip 9. Its source electrode is electrically connected to the upper-bridge-arm driving metal layer 7 and the AC-side electrode layer 4 as the first switching end of the upper-bridge-arm chip 9. Its drain electrode is electrically connected to the positive electrode layer 2 as the second switching end of the upper-bridge-arm chip 9. The lower-bridge-arm chip 10 may include an IGBT device. Its gate electrode is used as the second control end of the lower-bridge-arm chip 10. Its source electrode is electrically connected to the lower-bridge-arm driving metal layer 8 and the negative electrode layer 3 as the third switching end of the lower-bridge-arm chip 10. Its drain electrode is electrically connected to the AC-side electrode layer 4 as the fourth switching end of the lower-bridge-arm chip 10.

[0043] In other embodiments of this embodiment, the above bridge-arm chips may further include diodes, which are used to protect the bridge-arm chips when the voltage or current suddenly changes.

[0044] In other embodiments, other switching tubes may be used instead of the IGBT device, such as triodes or MOS tubes, etc.

[0045] The power module implemented in this embodiment is a full-bridge power module.

[0046] Optionally, the power module implemented in this embodiment may be a three-phase full-bridge power module. Specifically, the power module of this embodiment includes three lower-bridge-arm chips 10 and three upper-bridge-arm chips 9. The three lower-bridge-arm chips 10 are arranged along the second direction of the substrate 1, the three upper-bridge-arm chips 9 are arranged along the second direction, and the three lower-bridge-arm chips 10 and the three upper-bridge-arm chips 9 are arranged in one-to-one correspondence. The lower-bridge-arm chips 10 and the upper-bridge-arm chips 9 are arranged along the first direction of the substrate 1, and the first direction is perpendicular to the second direction.

[0047] Three lower-bridge-arm chips 10 and three upper-bridge-arm chips 9 form the three-phase bridge arms of the power module. Each phase bridge arm includes one lower-bridge-arm chip 10 and one upper-bridge-arm chip 9. The specific connection method of each phase bridge arm can refer to the above description. The arrangement of the above three-phase bridge arms can make there be no interference between the upper and lower bridge arms, and is convenient for the layout of the upper-bridge-arm driving metal layer 7, the positive electrode layer 2, the negative electrode layer 3, the lower-bridge-arm driving metal layer 8, the AC-side electrode layer 4 and the corresponding lead-out endpoints, making the overall layout of the devices in the power module more compact and further reducing the area of the commutation loop.

[0048] Of course, in other embodiments, the power module may be provided with only two sets of half-bridge arms, or more than three sets of half-bridge arms, and the specific is not limited.

[0049] Optionally, the upper-bridge-arm driving metal layer 7, the positive electrode layer 2, the AC-side electrode layer 4 and the lower-bridge-arm driving metal layer 8 of this embodiment are arranged adjacent to each other in sequence along the first direction of the substrate 1, so that the upper-bridge-arm driving metal layer 7 and the lower-bridge-arm driving metal layer 8 are located in the two side regions of the substrate 1.

[0050] In this embodiment, the upper-bridge-arm driving metal layer 7 and the lower-bridge-arm driving metal layer 8 are arranged in the two side regions of the substrate 1, which will not interfere with the main power circuit of the power module.

[0051] Furthermore, in this embodiment, the upper-bridge-arm driving metal layer 7 and the lower-bridge-arm driving metal layer 8 are arranged in the two side regions of the substrate 1 perpendicular to the arrangement direction of the lower-bridge-arm chips 10 and the upper-bridge-arm chips 9, and the upper-bridge-arm driving metal layer 7 is arranged on the same side as the upper-bridge-arm chips 9, and the lower-bridge-arm driving metal layer 8 is arranged on the same side as the lower-bridge-arm chips 10, which can further reduce the interference to the main power circuit of the power module, can make the parasitic inductance of the main power circuit significantly smaller than that of the traditional layout, thereby reducing the switching loss and the voltage spike during switching, and improving the switching performance of the functional module.

[0052] Optionally, multiple upper-bridge-arm chips 9 of this embodiment are arranged on the side of the positive electrode layer 2 away from the substrate 1 and are arranged along the second direction, and the positive electrode lead-out endpoints of the positive electrode layer 2 are arranged close to the upper-bridge-arm chip 9 at the end among the multiple upper-bridge-arm chips 9.

[0053] In this embodiment, the multiple upper-bridge-arm chips 9 and the positive electrode layer 2 are stacked, which can not only reduce the area of the substrate 1, but also shorten the connection path between the upper-bridge-arm chips 9 and the positive electrode layer 2, and further reduce the area of the commutation loop.

[0054] Among them, two positive electrode lead-out endpoints are provided on the positive electrode layer 2, located on both sides of the multiple upper-bridge-arm chips 9 arranged along the second direction, which is convenient for the lead-out of the positive electrode layer 2, and leading out the positive electrode layer 2 from both sides improves the symmetry of the structure and can reduce the difference between the commutation loop areas of the multiple upper-bridge-arm chips 9.

[0055] Optionally, the negative electrode layer 3 of this embodiment and the AC side electrode layer 4 are arranged along the second direction of the substrate 1; a plurality of lower arm chips 10 are arranged on the side of the AC side electrode layer 4 away from the substrate 1 and are arranged along the second direction. The negative electrode layer 3 is arranged close to the lower arm chip 10 at the end among the plurality of lower arm chips 10, so that the negative electrode lead-out end point of the negative electrode layer 3 is arranged close to the lower arm chip 10 at the end among the plurality of lower arm chips 10.

[0056] Specifically, the negative electrode layer 3 includes two sub-negative electrode layers, which are located on both sides of the AC side electrode layer 4 arranged along the second direction.

[0057] In this embodiment, stacking the plurality of lower arm chips 10 and the AC side electrode layer 4 not only can reduce the area of the substrate 1, but also can shorten the connection path between the lower arm chips 10 and the AC side electrode layer 4, further reducing the area of the commutation loop.

[0058] Specifically, the two sub-negative electrode layers, the plurality of lower arm chips 10 in this embodiment are connected through the chip connector 5, and the negative electrode layer 3 is led out from the two negative electrode lead-out end points on both sides, improving the symmetry of the structure and being able to reduce the difference in the commutation loop areas of the plurality of lower arm chips 10.

[0059] A plurality of first connection parts of the chip connector 6 are electrically connected to the plurality of upper arm chips 9 one by one, and a plurality of third connection parts of the chip connector 6 are electrically connected to the AC side electrode layer 4 and the corresponding upper arm chip 9.

[0060] Among them, the upper arm driving metal layer 7 of this embodiment includes two insulating sub-metal layers, which are respectively electrically connected to the first control end and the first switch end of the upper arm chip 9 through connectors (such as bonding wires, etc.) to provide driving signals for the first control end and the first switch end of the upper arm chip 9 respectively; the lower arm driving metal layer 8 includes two insulating sub-metal layers, which are respectively electrically connected to the second control end and the third switch end of the lower arm chip 10 through connectors (such as bonding wires, etc.) to provide driving signals for the second control end and the third switch end of the lower arm chip 10 respectively.

[0061] Among them, each sub-metal layer in the upper arm driving metal layer 7 connected to the plurality of upper arm chips 9 is integrally arranged, and each sub-metal layer in the lower arm driving metal layer 8 connected to the plurality of lower arm chips 10 is integrally arranged. In this way, the consistency of the driving signals among the plurality of upper arm chips 9 and the consistency of the driving signals among the plurality of lower arm chips 10 can be improved.

[0062] Optionally, the upper arm driving metal layer 7 and the lower arm driving metal layer 8 of this embodiment can be a copper-aluminum alloy layer or the same layer, etc., which can increase the conductivity.

[0063] In another embodiment, the power module may further include a plurality of terminal components electrically connected to the above-mentioned terminal lead-out points. For example, the plurality of terminal components include a first terminal component and a second terminal component. One end of the first terminal component is electrically connected to the positive electrode lead-out end point, and the other end of the first terminal component extends out of the outside of the substrate for accessing a positive voltage from the outside of the power module to the positive electrode lead-out end point; one end of the second terminal component is electrically connected to the negative electrode lead-out end point, and the other end of the second terminal component extends out of the outside of the substrate for accessing a negative voltage or grounding from the outside of the power module to the negative electrode lead-out end point.

[0064] Specifically, one end of the first terminal component extends with a first connection portion and a second connection portion arranged at intervals. The first connection portion is electrically connected to a positive electrode lead-out end point provided on the positive electrode layer, and the second connection portion is electrically connected to another positive electrode lead-out end point. An installation hole is provided at the other end of the first terminal component for fixing the power supply line of the positive voltage.

[0065] Specifically, one end of the second terminal component extends with a third connection portion and a fourth connection portion arranged at intervals. The third connection portion is connected to a negative electrode lead-out end point provided on the negative electrode layer, and the fourth connection portion is electrically connected to another negative electrode lead-out end point. An installation hole is provided at the other end of the second terminal component for fixing the power supply line or ground wire of the negative voltage.

[0066] Wherein, the distance between the middle part of the first terminal component between one end and the other end and the substrate is greater than the distances between the one end and the other end and the substrate; because there is an upper bridge arm chip between the two positive electrode lead-out end points, therefore, this structure can increase the connection electrical performance and stability between the other end of the first terminal component and the two positive electrode lead-out end points, and the connection electrical performance and stability between one end of the first terminal component and the power supply line of the positive voltage;

[0067] The distance between the middle part of the second terminal component between one end and the other end and the substrate is greater than the distances between the one end and the other end and the substrate; because there is a lower bridge arm chip between the two negative electrode lead-out end points, therefore, this structure can increase the connection electrical performance and stability between the other end of the second terminal component and the two negative electrode lead-out end points, and the connection electrical performance and stability between one end of the second terminal component and the power supply line of the negative voltage. Optionally, the second terminal component and the second terminal component of this embodiment are led out from the parallel plane of the substrate. This lead-out layout facilitates the connection between the power module and the circuit board carrying the power module and shortens the connection path therebetween.

[0068] Optionally, the first terminal component and the second terminal component of this embodiment are stacked to control the inductance introduced by the terminal components and are led out from the same side of the substrate, which is convenient for connecting to the positive and negative poles of the same power supply device and shortens the connection path.

[0069] Optionally, the multiple terminal components of this embodiment further include: a third terminal component, one end of which is electrically connected to the AC lead-out end point, and the other end extends out of the outer side of the substrate.

[0070] For the specific structure of the third terminal component, reference can be made to the above-mentioned first terminal component and second terminal component for setting.

[0071] Optionally, the multiple terminal components of this embodiment further include: a fourth terminal component, one end of the fourth terminal component is electrically connected to the upper bridge arm drive metal layer, and the other end of the fourth terminal component extends out of the outer side of the substrate.

[0072] Wherein, the fourth terminal component includes two first terminal posts that are insulated from each other and are respectively electrically connected to two sub-metal layers of the upper bridge arm drive metal layer, and are used to respectively provide the drive signal for the first control end of the upper bridge arm chip and the drive signal for the first switch end.

[0073] The multiple terminal components of this embodiment further include: a fifth terminal component, one end of the fifth terminal component is electrically connected to the lower bridge arm drive metal layer, and the other end of the fifth terminal component extends out of the outer side of the substrate.

[0074] Wherein, the fifth terminal component includes two second terminal posts that are insulated from each other and are respectively electrically connected to two sub-metal layers of the lower bridge arm drive metal layer, and are used to respectively provide the drive signal for the second control end of the lower bridge arm chip and the drive signal for the third switch end.

[0075] The power module of this embodiment further includes: a sixth terminal component, one end of the sixth terminal component is electrically connected to the positive electrode layer, and the other end of the sixth terminal component extends out of the outer side of the substrate. The sixth terminal component serves as the detection terminal for the second switch end, i.e., the drain electrode, of the upper bridge arm chip, and is used to implement overvoltage protection and desaturation short-circuit protection for the upper bridge arm chip.

[0076] Optionally, all the above-mentioned terminal components of this embodiment are led out along the parallel plane of the substrate, which is convenient for the connection between the power module and the circuit board carrying the power module, and shortens the connection path therebetween.

[0077] Specifically, the first terminal component, the second terminal component, and the fifth terminal component are led out from one side of the substrate along the first direction, and the third terminal component, the fourth terminal component, and the sixth terminal component are led out from the other side of the substrate along the first direction, so as to have sufficient space to arrange the terminal components and be convenient for encapsulation.

[0078] Of course, in other embodiments, based on other electrical properties, the above-mentioned terminal components can be led out along the vertical direction of the substrate, or led out from other sides of the substrate.

[0079] Different from the prior art, the chip connector of the present application is used for a power module, which includes a chip connector, a substrate, and a plurality of power chips disposed on the substrate. The chip connector includes: a first connection portion and a second connection portion. Among them, the first connection portion is used to electrically connect the top electrodes on the side of the plurality of power chips facing away from the substrate to achieve parallel connection of the plurality of power chips; one end of the second connection portion is electrically connected to the first connection portion, and the other end of the second connection portion is connected to the substrate. By connecting the top electrodes of the plurality of power chips through the first connection portion and connecting the first connection portion to the substrate through the second connection portion, the present application can not only achieve parallel connection of the plurality of power chips, but also improve the current-carrying capacity and reliability compared with the electrical connection of the top electrodes of the power chips by using bonding wires in traditional power modules.

[0080] The above are only the embodiments of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be included in the patent protection scope of the present application by the same token.

Claims

1. A power module, characterized in that, Including: a substrate, an upper-bridge-arm driving metal layer, a positive electrode layer, a lower-bridge-arm driving metal layer, a negative electrode layer, an AC-side electrode layer, a plurality of power chips, and chip connectors; wherein, the power chips include: a plurality of upper-bridge-arm chips and a plurality of lower-bridge-arm chips, and the chip connectors include a first chip connector and a second chip connector; the AC-side electrode layer, the upper-bridge-arm driving metal layer, the positive electrode layer, the lower-bridge-arm driving metal layer, and the negative electrode layer are all disposed on the substrate, the upper-bridge-arm chips are disposed on a side of the positive electrode layer away from the substrate, the lower-bridge-arm chips are disposed on a side of the AC-side electrode layer away from the substrate, the upper-bridge-arm driving metal layer is electrically connected to a first control end and a first switching end of the upper-bridge-arm chips, the positive electrode layer is connected to a second switching end of the upper-bridge-arm chips, the lower-bridge-arm driving metal layer is electrically connected to a second control end and a third switching end of the lower-bridge-arm chips, the negative electrode layer is connected to a fourth switching end of the lower-bridge-arm chips through the first chip connector, and the AC-side electrode layer is connected to the first switching end of the upper-bridge-arm chips and the fourth switching end of the lower-bridge-arm chips through the second chip connector; wherein, the first chip connector and the second chip connector both include a first connection portion, a second connection portion, and a third connection portion electrically connected to the first connection portion and the second connection portion respectively, the first connection portion of the first chip connector is electrically connected to the third switching ends of the plurality of lower-bridge-arm chips on a side away from the AC-side electrode layer to realize parallel connection of the third switching ends of the plurality of lower-bridge-arm chips; the second connection portion of the first chip connector is connected to the negative electrode layer; the first connection portion of the second chip connector is electrically connected to the first switching ends of the plurality of upper-bridge-arm chips on a side away from the positive electrode layer to realize parallel connection of the first switching ends of the plurality of upper-bridge-arm chips; the second connection portion of the second chip connector is connected to the AC-side electrode layer; wherein, the plurality of lower-bridge-arm chips are arranged along a second direction of the substrate, the plurality of upper-bridge-arm chips are arranged along the second direction, and the lower-bridge-arm chips and the upper-bridge-arm chips are arranged along a first direction of the substrate, the first direction is perpendicular to the second direction, the positive electrode layer and the negative electrode layer are arranged along the first direction, and the negative electrode layer is located on both sides of the AC-side electrode layer in the second direction; wherein, the AC lead-out end points of the AC-side electrode layer are located on a perpendicular line of the connection line between two adjacent upper-bridge-arm chips and on a perpendicular line of the connection line between two adjacent lower-bridge-arm chips; wherein, an opening is provided on the first connection portion, and the opening corresponds to the interval between two adjacent power chips.

2. The power module according to claim 1, characterized in that, The distance between the third connection portion and the substrate is greater than the distances between the first connection portion and the second connection portion and the substrate, and the projection of the third connection portion on the substrate is located at the gap between the power chips and the AC-side electrode layer or the negative electrode layer.

3. The power module according to claim 2, wherein The third connection portion is arched.

4. The power module according to claim 1, characterized in that, The opening is a circular opening, a wedge-shaped opening or a square opening.

5. The power module according to claim 2, characterized in that, The first connecting portion, the second connecting portion and the third connecting portion are plate-shaped and integrally provided.

6. The power module according to claim 1, characterized in that, The chip connecting member is a copper sheet or a copper-molybdenum alloy sheet.

7. The power module according to claim 1, characterized in that, It further includes: A terminal member, one end of which is connected to the first connecting portion, and the other end extends to the outside of the substrate.

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