Sensing device and method for manufacturing the same

Abstract

The present invention provides a sensing device and a manufacturing method thereof. The sensing device includes a flexible substrate, a reflective layer, a planarizing layer, a plurality of switching elements, and a plurality of sensing elements. The surface of the flexible substrate has a plurality of grooves. The reflective layer is located on the flexible substrate and conforms to the inner surfaces of the plurality of grooves. The planarizing layer is located on the reflective layer. The plurality of switching elements are located on the planarizing layer. The plurality of sensing elements are located on the planarizing layer and are electrically connected to the plurality of switching elements respectively. In addition, a manufacturing method of the sensing device is also provided.

Description

Technical Field

[0001] The present invention relates to an optoelectronic device and a manufacturing method thereof, and particularly to a sensing device and a manufacturing method thereof. Background Art

[0002] Due to its excellent performance, the photosensor has been widely used in fields such as security inspection, industrial inspection, and medical diagnosis. For example, in medical diagnosis, an X-ray sensor can be used to extract images of the human chest, blood vessels, teeth, etc. Generally speaking, such sensors mainly include a thin film transistor (TFT) and a photodiode. Among them, the photodiode can convert light energy into an electrical signal, and the thin film transistor is used to read the electrical signal measured by the photodiode.

[0003] Traditionally, a static protection layer, usually an aluminum film or a conductive film, is attached to the back surface of such a substrate. However, when attaching a conductive film to the substrate, voids, such as bubbles, will be generated due to incomplete fitting, resulting in interference of light reflection penetrating through the gaps to reach the conductive film, leading to uneven brightness of the sensed image and affecting the sensing quality. Summary of the Invention

[0004] The purpose of the present invention is to provide a sensing device with good sensing quality.

[0005] The present invention provides a manufacturing method of a sensing device, which can provide a sensing device with good sensing quality.

[0006] An embodiment of the present invention provides a sensing device, including: a flexible substrate with a plurality of grooves on its surface; a reflective layer located on the flexible substrate and conforming to the inner surfaces of the plurality of grooves; a flat layer located on the reflective layer; a plurality of switching elements located on the flat layer; and a plurality of sensing elements located on the flat layer and electrically connected to the plurality of switching elements respectively.

[0007] In an embodiment of the present invention, the inner surfaces of the above-mentioned grooves have flat side surfaces and bottom surfaces or arc-shaped surfaces.

[0008] In an embodiment of the present invention, the opening width of the above-mentioned grooves is greater than the width of the bottom surface.

[0009] In an embodiment of the present invention, the above-mentioned grooves surround one sensing element and one switching element, or the above-mentioned grooves surround four sensing elements and four switching elements.

[0010] In an embodiment of the present invention, the ratio of the depth of the above-mentioned grooves to the thickness of the flat layer is 0.5 to 0.95.

[0011] In an embodiment of the present invention, the above-mentioned reflective layer has a floating or grounded potential.

[0012] In an embodiment of the present invention, the refractive index difference between the above-mentioned reflective layer and the flat layer is not less than 0.4.

[0013] In an embodiment of the present invention, the above-mentioned sensing device further includes a data line and a scan line, which are electrically connected to a plurality of switching elements, and the gaps between the orthographic projections of the data line, the scan line, and the sensing element on the flexible substrate completely overlap the orthographic projection of the groove on the flexible substrate.

[0014] In an embodiment of the present invention, the above-mentioned flexible substrate is a film type polyimide (film type PI).

[0015] In an embodiment of the present invention, the thickness of the above-mentioned flexible substrate is 40 to 400 μm.

[0016] In an embodiment of the present invention, the above-mentioned flat layer includes varnish type polyimide (Varnish PI).

[0017] In an embodiment of the present invention, the thickness of the above-mentioned flat layer is 5 to 50 μm.

[0018] An embodiment of the present invention provides a method for manufacturing a sensing device, including: forming a flexible substrate on a carrier plate, and the surface of the flexible substrate has a plurality of grooves; forming a reflective layer on the flexible substrate, and the reflective layer conforms to the inner surfaces of the plurality of grooves; and forming a flat layer on the reflective layer, and the flat layer fills the plurality of grooves.

[0019] In an embodiment of the present invention, the above-mentioned carrier plate is a glass substrate.

[0020] In an embodiment of the present invention, the above-mentioned plurality of grooves are formed by imprinting.

[0021] In an embodiment of the present invention, the surface flatness of the above-mentioned flat layer is not less than 90%.

[0022] In an embodiment of the present invention, the method for manufacturing the above-mentioned sensing device further includes forming a plurality of switching elements and a plurality of sensing elements on the flat layer, and the plurality of sensing elements are respectively electrically connected to the plurality of switching elements.

[0023] In an embodiment of the present invention, the method for manufacturing the above-mentioned sensing device further includes forming a barrier layer on the flat layer before forming the plurality of switching elements.

[0024] In an embodiment of the present invention, the method for manufacturing the above-mentioned sensing device further includes removing the carrier plate.

[0025] In an embodiment of the present invention, the method for manufacturing the above sensing device further includes attaching the flexible substrate to the backplane after removing the carrier plate, and the rigidity of the backplane is greater than that of the flexible substrate.

[0026] The beneficial effect of the present invention is that the sensing device of the present invention can improve the uniformity of reflected light and thus improve the sensing quality by making regular grooves on the flexible substrate and providing a reflective layer on the grooves, and at the same time can also improve the light utilization rate.

[0027] To make the above features and advantages of the present invention more obvious and understandable, specific embodiments are hereinafter given and detailed descriptions are made in conjunction with the accompanying drawings as follows. Description of the Drawings

[0028] Figure 1A is a top view schematic diagram of a sensing device according to an embodiment of the present invention.

[0029] Figure 1B is along Figure 1A the sectional line A-A' for a sectional schematic diagram.

[0030] Figure 1C is along Figure 1A the sectional line B-B' for a sectional schematic diagram.

[0031] Figures 2A to 2D is a sectional schematic diagram of the step flow of the method for manufacturing a sensing device according to an embodiment of the present invention.

[0032] Figure 3A is a top view schematic diagram of a sensing device according to an embodiment of the present invention.

[0033] Figure 3B is along Figure 3A the sectional line C-C' for a sectional schematic diagram.

[0034] Figure 4 is a sectional schematic diagram of a sensing device according to an embodiment of the present invention.

[0035] Figure 5 is a sectional schematic diagram of a sensing device according to an embodiment of the present invention.

[0036] Figure 6 is a sectional schematic diagram of a sensing device according to an embodiment of the present invention.

[0037] The reference numerals are as follows:

[0038] 10, 30, 40, 50, 60: sensing device

[0039] 110, 310, 410, 510, 610: flexible substrate

[0040] 111, 113: Surface

[0041] 112, 312, 412, 512, 612: Groove

[0042] 112B, 512B: Bottom surface

[0043] 112W, 512W: Side surface

[0044] 120, 320, 420, 520, 620: Reflective layer

[0045] 130: Flat layer

[0046] 140: Switching element

[0047] 140C: Semiconductor layer

[0048] 140D: Drain

[0049] 140G: Gate

[0050] 140S: Source

[0051] 150: Sensing element

[0052] 150B: Lower electrode

[0053] 150P: Photoelectric conversion layer

[0054] 150T: Upper electrode

[0055] 160: Barrier layer

[0056] 170: Wavelength conversion layer

[0057] 180: Backplane

[0058] A - A’, B - B’, C - C’: Section line

[0059] A1: Area

[0060] CA: Carrier board

[0061] D1: Depth

[0062] DL: Data line

[0063] G1, G2: Gap

[0064] I1, I2, I3, I4: Insulating layer

[0065] IS1, IS4: Inner surface

[0066] OP: Opening

[0067] SL: Scanning line

[0068] T1: Thickness

[0069] W1, W2: Width

[0070] θ: Included angle Detailed implementation manner

[0071] In the drawings, for clarity, the thicknesses of layers, films, panels, regions, etc. are enlarged. Throughout the specification, like reference numerals denote like elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or intervening elements may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, no intervening elements are present. As used herein, "connected" can refer to physical and / or electrical connection. Furthermore, "electrically connected" or "coupled" can mean that other elements exist between two elements.

[0072] The terms used herein are for the purpose of describing particular embodiments only and are not limiting. As used herein, unless the context clearly dictates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms, including "at least one" or indicating "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprises" and / or "comprising" specify the presence of the stated features, regions, wholes, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components, and / or combinations thereof.

[0073] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientations shown in the figures. For example, if the device in one figure is flipped, an element described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" can include both the "lower" and "upper" orientations, depending on the specific orientation of the figure. Similarly, if the device in one figure is flipped, an element described as being "below" or "beneath" other elements will be oriented as being "above" the other elements. Thus, the exemplary terms "lower" or "beneath" can include both the upper and lower orientations.

[0074] Considering a specific quantity of the measurements discussed and measurement-related errors (i.e., limitations of the measurement system), the "about", "approximate", or "substantially" used herein includes the stated value and the average value within an acceptable deviation range of the specific value determined by a person of ordinary skill in the art. For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the "about", "approximate", or "substantially" used herein may, depending on optical properties, etching properties, or other properties, select a more acceptable deviation range or standard deviation, rather than applying one standard deviation to all properties.

[0075] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this invention, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0076] Exemplary embodiments are described herein with reference to cross-sectional views that are schematic diagrams of idealized embodiments. Accordingly, shape variations as a result of, for example, manufacturing techniques and / or tolerances are to be expected. Thus, the embodiments described herein should not be construed as limited to the specific shapes of regions as shown herein, but include, for example, shape deviations resulting from manufacturing. For example, regions shown or described as flat will generally have rough and / or non-linear features. Additionally, the sharp angles shown may be rounded. Thus, the regions shown in the figures are schematic in nature, and their shapes are not intended to show the exact shape of the regions and are not intended to limit the scope of the claims.

[0077] Figure 1A is a top view schematic diagram of a sensing device 10 according to an embodiment of the present invention. Figure 1B is along Figure 1A the cross-sectional line A-A' for a cross-sectional schematic diagram. Figure 1C is along Figure 1A the cross-sectional line B-B' for a cross-sectional schematic diagram. For the sake of simplicity in the expression of the drawings, Figure 1A schematically shows a flexible substrate 110, a switching element 140, a sensing element 150, a scan line SL, a data line DL, and a common electrode CM, and other components and film layers are omitted.

[0078] Please refer to Figures 1A to 1C, the sensing device 10 includes: a flexible substrate 110 having a plurality of grooves 112 on its surface; a reflective layer 120 located on the flexible substrate 110 and conforming to the inner surface IS1 of the plurality of grooves 112; a planar layer 130 located on the reflective layer 120; a plurality of switching elements 140 located on the planar layer 130; and a plurality of sensing elements 150 located on the planar layer 130 and electrically connected to the plurality of switching elements 140 respectively.

[0079] In the sensing device 10 of an embodiment of the present invention, the interference effect of irregular reflected light is avoided by a plurality of regularly arranged grooves 112, and the sensing quality of the sensing device 10 can be improved. Hereinafter, in conjunction with Figures 1A to 1C , the implementation manners of the respective elements of the sensing device 10 will be further described, but the present invention is not limited thereto.

[0080] In this embodiment, the flexible substrate 110 may be a substrate having flexibility, such as a film type polyimide (film type PI), but is not limited thereto. For example, the flexible substrate 110 may be a polyimide film formed through steps such as polymerization, imidization, casting, drying, and stretching of pyromellitic dianhydride (PMDA) and diaminodiphenyl ether (ODA). In some embodiments, the thickness of the flexible substrate 110 may be about 40 μm to 400 μm, but the present invention is not limited thereto.

[0081] The plurality of grooves 112 may be recessed into the flexible substrate 110 from the surface 111 of the flexible substrate 110. In this embodiment, the inner surface of the groove 112 may have a side surface 112W and a bottom surface 112B, and both the side surface 112W and the bottom surface 112B have a substantially flat surface, but are not limited thereto. In some embodiments, the side surface 112W and the bottom surface 112B may have an arcuate surface. Therefore, the vertical distance between the bottom surface 112B of the groove 112 and the surface 111 of the flexible substrate 110 is also the depth D1 at which the groove 112 is recessed from the surface 111 of the flexible substrate 110. In some embodiments, the included angle θ between the side surface 112W and the bottom surface 112B may be ≥ 90 degrees, such that the opening width W1 of the groove 112 is greater than the width W2 of the bottom surface 112B.

[0082] The arrangement manner of the grooves 112 is not particularly limited, and preferably, they are arranged on the surface 111 of the flexible substrate 110 in a regular manner. For example, in some embodiments, the grooves 112 may overlap the scan lines SL and the data lines DL and present a mesh pattern on the flexible substrate 110, where each grid may substantially overlap a group of electrically connected switching elements 140 and sensing elements 150. In other words, the grooves 112 may surround a sensing element 150 and a switching element 140.

[0083] In this embodiment, the reflective layer 120 can be disposed on the surface 111 of the flexible substrate 110, as well as on the side surface 112W and the bottom surface 112B of the groove 112, such that the reflective layer 120 can conform to the surface 111, the side surface 112W, and the bottom surface 112B, but is not limited thereto. In some embodiments, the reflective layer 120 can be disposed only on the side surface 112W and the bottom surface 112B. In some embodiments, the reflective layer 120 can be disposed only on the side surface 112W and the surface 111. It should be noted that the surface 111 is directly below the sensing element 150. Therefore, the reflective layer 120 disposed on the surface 111 can directly reflect the incident light from above to the sensing element 150, thereby improving the light utilization rate of the sensing element 150. Since the shapes and inclination angles of the side surfaces 112W are the same, the reflective layer 120 disposed on the side surfaces 112W can reflect the incident light to the sensing element 150 in a uniform manner, thereby further improving the light utilization rate of the sensing element 150. Additionally, since the bottom surface 112B mainly overlaps the region A1 between the sensing elements 150, the reflective layer 120 disposed on the bottom surface 112B can also reflect the incident light to the sensing element 150 directly or indirectly in a regular manner.

[0084] The material of the reflective layer 120 can include materials with relatively high reflectivity such as metals. For example, the reflective layer 120 can include at least one of aluminum (Al), silicon (Si), silver (Ag), gold (Au), and titanium dioxide (TiO2). Additionally, the reflective layer 120 can have a single-layer or multi-layer structure. The multi-layer structure, for example, includes a stacked layer of the above materials or a stacked layer of the above materials and other materials. In some embodiments, the reflective layer 120 can have a floating or grounding potential.

[0085] The planarizing layer 130 can be filled into the groove 112 to provide a flat surface for facilitating subsequent processes. In this embodiment, the planarizing layer 130 can be formed by coating varnish polyimide (Varnish PI). In some embodiments, the thickness T1 of the planarizing layer 130 can be about 5 to 50 μm, such as 15 μm, 30 μm, or 45 μm. In some embodiments, the ratio of the depth D1 of the groove 112 to the thickness T1 of the planarizing layer 130 can be 0.5 to 0.95, such as 0.6, 0.75, or 0.9.

[0086] In some embodiments, the refractive index difference between the reflective layer 120 and the planarizing layer 130 is preferably not less than 0.4, so as to increase the substantial amount of reflected light of the reflective layer 120.

[0087] The switching elements 140 can be arranged in an array on the flat layer 130. For example, in the present embodiment, the switching element 140 may include a semiconductor layer 140C, a gate 140G, a source 140S, and a drain 140D, and the insulating layer I1 may be located between the film layer for forming the gate 140G and the film layer for forming the source 140S. The region where the semiconductor layer 140C overlaps the gate 140G can be regarded as the channel region of the switching element 140. The gate 140G can be electrically connected to the scan line SL, and the drain 140D can be electrically connected to the data line DL. The material of the semiconductor layer 140C may include a silicon-based semiconductor material (such as polysilicon, amorphous silicon, etc.), an oxide semiconductor material, an organic semiconductor material, etc. The materials of the scan line SL, the data line DL, the gate 140G, the source 140S, and the drain 140D may include metals with good conductivity, such as aluminum, molybdenum, titanium, copper, etc.

[0088] The sensing elements 150 can be arranged in an array on the flat layer 130, and each sensing element 150 can be provided corresponding to a switching element 140. For example, in the present embodiment, each group of switching elements 140 and sensing elements 150 may have a substantially rectangular footprint and be arranged in an array on the flat layer 130, but the present invention is not limited thereto, and the arrangement of the switching elements 140 and the sensing elements 150 can be changed as needed.

[0089] In the present embodiment, the sensing element 150 may be a photodiode having a PIN junction structure, but is not limited thereto. In other embodiments, the sensing element 150 may be a PN diode having a PN junction structure or a sensing element using a silicon-rich oxide (SRO) as the sensing layer. Or, in some embodiments, the sensing element 150 may have a stacked structure in which the PN junction structure and the PIN junction structure are repeatedly arranged. For example, the sensing element 150 may include an upper electrode 150T, a lower electrode 150B, and a photoelectric conversion layer 150P, and the photoelectric conversion layer 150P is located between the upper electrode 150T and the lower electrode 150B. The insulating layer I2 may be located between the lower electrode 150B and the photoelectric conversion layer 150P. The insulating layer I2 may have a plurality of openings OP, and the openings OP may define the setting area of the photoelectric conversion layer 150P, and the photoelectric conversion layer 150P may contact the lower electrode 150B through the openings OP.

[0090] In some embodiments, the optoelectronic conversion layer 150P may include an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, and the intrinsic semiconductor layer is sandwiched between the N-type semiconductor layer and the P-type semiconductor layer to form a PIN junction structure. The material of the intrinsic semiconductor layer may be intrinsic amorphous silicon. The material of the N-type semiconductor layer may be N-type doped amorphous silicon, such as amorphous silicon doped with phosphorus. The material of the P-type semiconductor layer may be P-type doped amorphous silicon, such as amorphous silicon doped with boron. The lower electrode 150B of the sensing element 150 may be electrically connected to the source electrode 140S of the switching element SW. In some embodiments, the sensing device 10 may further include a common electrode CM and an insulating layer I3. The common electrode CM may be disposed above the sensing element 150, and the insulating layer I3 may be disposed between the sensing element 150 and the common electrode CM, and the upper electrode 150T of the sensing element 150 may be electrically connected to the common electrode CM. In this way, the sensing element 150 can convert the received light energy into an electrical signal, and the sensing device 10 can read the electrical signal measured by the sensing element 150 through the switching element 140.

[0091] In some embodiments, the sensing device 10 may further include a scanning line SL and a data line DL. The scanning line SL may be in the same film layer as the gate 140G of the switching element 140, and the scanning line SL may be electrically connected to the gate 140G; the data line DL may be in the same film layer as the source electrode 140S and the drain electrode 140D of the switching element 140, and the data line DL may be electrically connected to the drain electrode 140D. In some embodiments, the gap G1 between the orthographic projection of the scanning line SL on the flexible substrate 110 and the orthographic projection of the sensing element 150 on the flexible substrate 110 may completely overlap the orthographic projection of the groove 112 on the flexible substrate 110, and the gap G2 between the orthographic projection of the data line DL on the flexible substrate 110 and the orthographic projection of the sensing element 150 on the flexible substrate 110 may completely overlap the orthographic projection of the groove 112 on the flexible substrate 110. In this way, the light passing through the gaps G1 and G2 can be focused by the side surface 112W and the bottom surface 112B, so that the reflected light is not easily diffused to the two side sensing elements 150, improving the image resolution.

[0092] In some embodiments, the sensing device 10 may further include a barrier layer 160. The barrier layer 160 may be disposed between the switching element 140 and the sensing element 150 and the planarization layer to prevent impurities from entering the switching element 140 and the sensing element 150 and affecting the sensing performance of the sensing device 10.

[0093] In some embodiments, the sensing device 10 may further include a wavelength conversion layer 170 and an insulating layer I4. The wavelength conversion layer 170 may be disposed above the sensing element 150, and the insulating layer I4 may be disposed between the sensing element 150 and the wavelength conversion layer 170. The insulating layers I3 and I4 may each include, for example, an organic insulating material or a stack of an organic insulating material and an inorganic insulating material to form a flat surface on the upper side of the sensing element 150, which is beneficial to the arrangement of the wavelength conversion layer 170. The wavelength conversion layer 170 may convert the wavelength of the light from above the sensing device 10 into a wavelength suitable for absorption by the sensing element 150, so as to facilitate the sensing element 150 to generate a corresponding electrical signal. For example, the light from above the sensing device 10 may be an X-ray, and the X-ray may be absorbed and converted into visible light after entering the wavelength conversion layer 170, and the visible light then advances to the sensing element 150 and is absorbed by the photoelectric conversion layer 150P to generate an electrical signal. The material of the wavelength conversion layer 170 may be a scintillator material, such as cesium iodide (CsI), thallium-doped cesium iodide (CsI:Tl), sodium-doped cesium iodide (CsI:Na), thallium-doped sodium iodide (NaI:Tl), europium-doped lithium fluoride (LiF:Eu), terbium-doped gadolinium oxysulfide (Gd2O2S:Tb), praseodymium- and cerium-doped gadolinium oxysulfide (Gd2O2S:Pr,Ce), praseodymium-, cerium- or fluorine-doped gadolinium oxysulfide (Gd2O2S:Pr,Ce,F), cerium-doped yttrium aluminum garnet (YAG:Ce), europium-doped cadmium iodide (CdI2:Eu), terbium-doped lutetium oxide (Lu2O3:Tb), poly(3-hexylthiophene-2,5-diyl) (P3HT), bismuth germanate (Bi4Ge3O 12 ), cesium lead bromide (CsPbBr3), cadmium tungstate (CdWO4), silver-doped zinc sulfide (ZnS:Ag), cerium-doped yttrium aluminum oxide (YAlO3:Ce), cerium-doped lutetium orthosilicate (Lu2Si2O5:Ce), cerium-doped lanthanum aluminate (LaAlO3:Ce) or lanthanum bromide (LaBr3).

[0094] In some embodiments, the sensing device 10 may further include a backplane 180. The backplane 180 may be located on the side of the flexible substrate 110 opposite to the flat layer 130 to enhance the flexibility (stiffness) of the sensing device 10. In other words, the rigidity of the backplane 180 may be different from that of the flexible substrate 110, and the rigidity of the backplane 180 may be greater than that of the flexible substrate 110.

[0095] Figures 2A to 2D is a cross-sectional schematic view of the step flow of the manufacturing method of the sensing device 10 according to an embodiment of the present invention. Hereinafter, in conjunction with Figures 2A to 2D the manufacturing method of the sensing device 10 will be described.

[0096] Please refer to Figure 2A , first, a flexible substrate 110 is formed on a carrier plate CA. For example, the surface 113 of the flexible substrate 110 can be bonded to the surface of the carrier plate CA by a bonding method. The rigidity of the carrier plate CA can be greater than that of the flexible substrate 110, and the glass transition temperature of the carrier plate CA can be higher than that of the flexible substrate 110 to facilitate the subsequent steps. In this embodiment, the carrier plate CA is preferably a glass substrate, but is not limited thereto. A plurality of grooves 112 are formed on the surface 111 of the flexible substrate 110, and the grooves 112 can be formed by imprinting, but the present invention is not limited thereto.

[0097] Please refer to Figure 2B , then, a reflective layer 120 is formed on the flexible substrate 110, and the reflective layer 120 can at least conform to the side surface 112W of the groove 112. For example, the reflective layer 120 can conformably adhere to the side surface 112W and the bottom surface 112B of the groove 112 and the surface 111 of the flexible substrate 110.

[0098] Please refer to Figure 2C , then, a planarization layer 130 is formed on the reflective layer 120, and the planarization layer 130 fills the plurality of grooves 112 to prevent the unevenness of the grooves 112 from affecting the subsequent steps. The planarization layer 130 can be formed by coating methods such as roll coat, spin coat, bar coat, screen coat, blade coat, etc., so that the surface 131 of the planarization layer 130 can have a surface flatness of not less than 90%.

[0099] Next, please refer to Figure 1A and Figure 2D , a plurality of switching elements 140, a plurality of sensing elements 150, a scan line SL, and a data line DL are formed on the planarization layer 130, and the plurality of sensing elements 150 are electrically connected to the plurality of switching elements 140 respectively, and the plurality of switching elements 140 are all electrically connected to the scan line SL and the data line DL. For example, the lower electrode 150B of the sensing element 150 can be electrically connected or physically connected to the source 140S of the switching element 140, the gate 140G of the switching element 140 is electrically connected to the scan line SL, and the drain 140D of the switching element 140 is electrically connected to the data line DL. In some embodiments, a barrier layer 160 can also be formed on the surface 131 of the planarization layer 130 before forming the switching element 140 to prevent impurities from entering the switching element 140 and affecting the performance of the switching element 140.

[0100] In some embodiments, an insulating layer I3 and a common electrode CM may also be formed on the switching element 140 and the sensing element 150 after the formation of the switching element 140 and the sensing element 150, and the insulating layer I3 is located between the common electrode CM and the switching element 140 and the sensing element 150. In some embodiments, an insulating layer I4 and a wavelength conversion layer 170 may also be formed on the switching element 140 and the sensing element 150 after the formation of the switching element 140 and the sensing element 150, and the insulating layer I4 is located between the wavelength conversion layer 170 and the switching element 140 and the sensing element 150. The insulating layers I3 and I4 can provide a flat top surface for setting the common electrode CM and the wavelength conversion layer 170, and the wavelength conversion layer 170 can convert the wavelength of the light from above the sensing device 10 into a wavelength suitable for absorption by the sensing element 150. Then, the carrier substrate CA can be removed to expose the surface 113 of the flexible substrate 110.

[0101] Then, the flexible substrate 110 can be attached to the backplane 180 to complete the sensing device 10 as Figures 1A to 1C shown. In some embodiments, the rigidity of the backplane 180 can be greater than that of the flexible substrate 110 to enhance the flexural resistance of the sensing device 10. For example, an adhesive material can be used to bond the surface 113 of the flexible substrate 110 to the surface of the backplane 180. The material of the backplane 180 can be polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide (PI), but is not limited thereto.

[0102] Hereinafter, Figures 3A to 6 other embodiments of the present invention will be continued to be described, and, Figures 1A to 1C the component numbers and related contents of the embodiments of Figures 1A to 1C are used, wherein, the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference can be made to

[0103] Figure 3A FIG. is a top view schematic diagram of a sensing device 30 according to an embodiment of the present invention. Figure 3B is a cross-sectional schematic diagram taken along the Figure 3A section line C-C'. Please refer to Figures 3A to 3B , the sensing device 30 includes a flexible substrate 310 having a plurality of grooves 312 on its surface, a reflective layer 320, a flat layer 130, a plurality of switching elements 140, a plurality of sensing elements 150, a barrier layer 160, a wavelength conversion layer 170, a data line DL, a scan line SL, and a backplane 180.

[0104] Figures 3A to 3B The sensing device 30 shown and as Figures 1A to 1CThe main difference of the sensing device 10 shown is that the groove 312 of the sensing device 30 can surround the four sensing elements 150 and the four switching elements 140. In this way, the distribution area of the groove 312 can be reduced, and the part of the reflective layer 320 located in the groove 312 can still inhibit the reflected light from diffusing to the two side sensing elements 150, so as to improve the image resolution and thus improve the sensing quality of the sensing device 30. In other embodiments, the groove 312 can also surround more sensing elements 150 and switching elements 140.

[0105] Figure 4 FIG. 4 is a cross-sectional schematic view of a sensing device 40 according to an embodiment of the present invention. The sensing device 40 includes a flexible substrate 410 having a plurality of grooves 412 on its surface, a reflective layer 420, a flat layer 130, a plurality of sensing elements 150, a barrier layer 160, a wavelength conversion layer 170, scan lines SL, insulating layers I1 to I4, and a backplane 180. Figure 4 The main difference between the sensing device 40 shown and the Figures 1A to 1C sensing device 10 shown is that the inner surface IS4 of the groove 412 of the sensing device 40 can have an arc surface, and the area A1 between the sensing elements 150 completely overlaps with the inner surface IS4 of the groove 412. In this way, the part of the reflective layer 420 located on the inner surface IS4 of the groove 412 also has an arc surface, so that the light incident on the reflective layer 420 through the area A1 can be focused by the arc surface, making its reflected light not easily diffuse to the two side sensing elements 150, and improving the image resolution.

[0106] Figure 5 FIG. 5 is a cross-sectional schematic view of a sensing device 50 according to an embodiment of the present invention. The sensing device 50 includes a flexible substrate 510 having a plurality of grooves 512 on its surface, a reflective layer 520, a flat layer 130, a plurality of sensing elements 150, a barrier layer 160, a wavelength conversion layer 170, scan lines SL, insulating layers I1 to I4, and a backplane 180. Figure 5 The main difference between the sensing device 50 shown and the Figures 1A to 1CThe main difference of the sensing device 10 shown is that the orthographic projection of each sensing element 150 of the sensing device 50 on the flexible substrate 510 can completely fall within the orthographic projection of each groove 512 on the flexible substrate 510. In some embodiments, the sensing element 150 can overlap the bottom surface 512B of the groove 512, the area A1 between the sensing elements 150 can overlap the side surface 512W of the groove 512, and each groove 512 only overlaps one sensing element 150. In this way, the light incident through the area A1 can be reflected to the sensing element 150 in a uniform manner by the reflective layer 520 disposed on the side surface 512W, and the reflective layer 520 disposed on the bottom surface 512B can directly reflect the incident light from above to the sensing element 150, thereby improving the light utilization rate of the sensing device 50.

[0107] Figure 6 FIG. 4 is a cross-sectional schematic view of a sensing device 60 according to an embodiment of the present invention. The sensing device 60 includes a flexible substrate 610 having a plurality of grooves 612 on its surface, a reflective layer 620, a flat layer 130, a plurality of sensing elements 150, a blocking layer 160, a wavelength conversion layer 170, a scanning line SL, insulating layers I1 to I4, and a backplane 180. Figure 6 The main difference between the sensing device 60 shown and the sensing device 50 shown in Figure 5 FIG. 5 is that the groove 612 of the sensing device 60 can overlap a plurality of sensing elements 150, such as two, four, or nine sensing elements 150. In this way, the distribution area of the side surface of the groove 612 can be reduced, and the reflective layer 620 can still reflect light to the sensing element 150 in a uniform manner, thereby improving the light utilization rate of the sensing device 60.

[0108] In summary, the sensing device of the present invention can improve the uniformity of the reflected light and the sensing quality by making regular grooves on the flexible substrate and disposing a reflective layer on the grooves, and at the same time can also improve the light utilization rate.

[0109] Although the present invention has been disclosed above with embodiments, it is not intended to limit the present invention. Those skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended claims.

Claims

1. A sensing device, comprising: A flexible substrate having a plurality of grooves on its surface; A reflective layer located on the flexible substrate and conforming to the inner surfaces of the plurality of grooves; A flat layer located on the reflective layer; A plurality of switching elements located on the flat layer; And A plurality of sensing elements located on the flat layer and electrically connected to the plurality of switching elements respectively; A data line and a scan line electrically connected to the plurality of switching elements, and the gaps between the positive projections of the data line, the scan line and the sensing elements on the flexible substrate completely overlap the positive projections of the grooves on the flexible substrate; The grooves overlap the scan line and the data line and present a mesh pattern on the flexible substrate.

2. The sensing device according to claim 1, wherein the inner surfaces of the grooves have flat side surfaces and bottom surfaces or arc-shaped surfaces.

3. The sensing device according to claim 2, wherein the opening width of the grooves is greater than the width of the bottom surfaces.

4. The sensing device according to claim 1, wherein the grooves surround one sensing element and one switching element, or the grooves surround four sensing elements and four switching elements.

5. The sensing device according to claim 1, wherein the ratio of the depth of the grooves to the thickness of the flat layer is 0.5 to 0.

95.

6. The sensing device according to claim 1, wherein the reflective layer has a floating or grounded potential.

7. The sensing device according to claim 1, wherein the refractive index difference between the reflective layer and the flat layer is not less than 0.

4.

8. The sensing device according to claim 1, wherein the flexible substrate is a thin-film polyimide.

9. The sensing device according to claim 8, wherein the thickness of the flexible substrate is 40 to 400 μm.

10. The sensing device according to claim 1, wherein the flat layer comprises a coating-type polyimide.

11. The sensing device according to claim 10, wherein the thickness of the flat layer is 5 to 50 μm.

12. A method for manufacturing a sensing device, comprising: Forming a flexible substrate on a carrier plate, and the surface of the flexible substrate has a plurality of grooves; Forming a reflective layer on the flexible substrate, and the reflective layer conforms to the inner surfaces of the plurality of grooves; And Forming a flat layer on the reflective layer, and the flat layer fills the plurality of grooves; Forming a plurality of sensing elements, a data line and a scan line on the flat layer; and the gaps between the positive projections of the data line, the scan line and the sensing elements on the flexible substrate completely overlap the positive projections of the grooves on the flexible substrate; The grooves overlap the scan line and the data line, and the grooves present a mesh pattern on the flexible substrate.

13. The method for manufacturing a sensing device according to claim 12, wherein the carrier plate is a glass substrate.

14. The method for manufacturing a sensing device according to claim 12, wherein the plurality of grooves are formed by an imprinting method.

15. The method for manufacturing a sensing device according to claim 12, wherein the surface flatness of the flat layer is not less than 90%.

16. The method for manufacturing a sensing device as claimed in claim 12 further includes forming a plurality of switching elements on the flat layer, and the plurality of sensing elements are electrically connected to the plurality of switching elements respectively.

17. The method for manufacturing a sensing device as claimed in claim 16 further includes forming a barrier layer on the flat layer before forming the plurality of switching elements.

18. The method for manufacturing a sensing device as claimed in claim 12 further includes removing the carrier plate.

19. The method for manufacturing a sensing device as claimed in claim 18 further includes attaching the flexible substrate to a backplane after removing the carrier plate, and the rigidity of the backplane is greater than that of the flexible substrate.

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