Substrate processing apparatus and substrate processing method

Abstract

This invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a support unit for supporting and rotating a substrate on which a first pattern and a second pattern different from the first pattern are formed; a liquid supply unit for supplying a processing liquid to the substrate supported on the support unit; and a heating unit for heating either the first pattern or the second pattern.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0074359, filed with the Korean Patent Office on June 8, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] To manufacture semiconductor devices, various processes, such as photolithography, etching, ashing, ion implantation, and thin film deposition, are performed on substrates such as wafers. Various processing solutions and gases are used in each process. Additionally, a drying process is performed on the substrate to remove the processing solutions used to process the substrate.

[0005] Photolithography processes used to form patterns on wafers include exposure processes. An exposure process is a pre-operation that cuts the semiconductor integrated material adhered to the wafer into a desired pattern. Exposure processes can have various purposes, such as forming patterns for etching and forming patterns for ion implantation. The exposure process patterns the wafer using a light-following mask, which acts as a "framework." When light is emitted onto the semiconductor integrated material on the wafer, such as onto photoresist, the chemical properties of the photoresist change according to the pattern formed by the light and the mask. The pattern is formed on the wafer when a developer is supplied to the photoresist (whose chemical properties change according to the pattern).

[0006] In order to perform the exposure process accurately, the masks described above need to be manufactured precisely. Figure 1 This is a schematic diagram illustrating an example of a mask that can be used in an exposure process. (Reference) Figure 1 When aligning the mask M, multiple alignment marks AK can be marked on the mask M that can be used in the exposure process. Additionally, the mask M has multiple cells C. In each cell C, multiple exposure patterns EP can be formed, which are used to form patterns on the substrate during the exposure process. Furthermore, each cell C may have a first pattern P1, which is a monitoring pattern. Additionally, a second pattern P2 can be formed in a region outside the cell C, which is a pattern used to set the conditions of the exposure equipment performing the exposure process. When performing the exposure process using the mask M, it is preferable that the linewidths of the exposure patterns EP, the first pattern P1, and the second pattern P2 are the same to ensure accurate execution of the exposure process.

[0007] When etching is performed to make the linewidths of the first pattern P1 and the second pattern P2 equal, over-etching may occur in the patterns. For example, differences between the etching rates of the first pattern P1 and the second pattern P2 may occur several times, and to reduce such differences, over-etching may occur in either the first pattern P1 or the second pattern P2 during the etching process. When the etching process is performed precisely to minimize over-etching, it is time-consuming. Therefore, an additional linewidth calibration process is performed to precisely calibrate the linewidths of the patterns formed on the mask M.

[0008] Figure 2 The diagram shows the normal distribution of the first linewidth CDP1 of the first pattern P1 and the linewidth CDP2 of the second pattern P2 of the mask M before the linewidth calibration process, which is the final operation in the mask M manufacturing process. Furthermore, the first linewidth CDP1 and the second linewidth CDP2 have a size smaller than the target linewidth. And, as referenced... Figure 2 It can be seen that, before performing the linewidth calibration process, the deviation is intentionally placed in the critical dimension (CD) of the first pattern P1 and the second pattern P2.

[0009] In the linewidth calibration process, an etching chemical liquid is supplied to the substrate to make the first linewidth CDP1 and the second linewidth CDP2 become the target linewidth. However, when the etching chemical liquid is supplied uniformly on the substrate, even if either the first linewidth CDP1 or the second linewidth CDP2 can reach the target linewidth, the other linewidth CDP1 or the second linewidth CDP2 is difficult to reach the target linewidth. Furthermore, the deviation between the first linewidth CDP1 and the second linewidth CDP2 is not reduced. The mask M manufactured as described above makes it difficult to accurately perform the exposure process. Summary of the Invention

[0010] This invention aims to provide a substrate processing apparatus and a substrate processing method that can effectively process substrates.

[0011] The present invention also aims to provide a substrate processing apparatus and a substrate processing method that can minimize the processing deviation of patterns formed on a substrate.

[0012] The present invention also aims to provide a substrate processing apparatus and a substrate processing method capable of making the linewidth of the pattern formed on the substrate uniform.

[0013] The problems solved by this invention are not limited to those mentioned above, and those skilled in the art will clearly understand from this specification and the accompanying drawings any problems not mentioned.

[0014] An exemplary embodiment of the present invention provides a substrate processing apparatus, the substrate processing apparatus comprising: a support unit for supporting and rotating a substrate, on which a first pattern and a second pattern different from the first pattern are formed; a liquid supply unit for supplying processing liquid to the substrate supported on the support unit; and a heating unit for heating either the first pattern or the second pattern.

[0015] According to an exemplary embodiment, the heating unit may include an emitting member for emitting light with thermal energy to the substrate; and a moving member for changing the position of the emitting member.

[0016] According to an exemplary embodiment, the emitting member can be configured such that the light emitted onto the substrate is a laser.

[0017] According to an exemplary embodiment, the substrate processing apparatus may further include a controller for controlling the heating unit, the liquid supply unit, and the support unit, wherein the controller can control the support unit so as not to rotate the substrate while the emitting member emits light onto the substrate.

[0018] According to an exemplary embodiment, the controller can control the support unit so as not to rotate the substrate when the liquid supply unit supplies etching solution to the substrate, and control the support unit so as to rotate the substrate when the liquid supply unit supplies cleaning solution to the substrate.

[0019] According to an exemplary embodiment, the substrate processing apparatus may further include a controller for controlling the heating unit, the liquid supply unit, and the support unit. The heating unit may include an image acquisition member that acquires images of at least one or more reference marks marked on the substrate and transmits the acquired images to the controller. The controller can extract substrate position information from the images and, based on the substrate position information and pattern position information, controls the moving member to emit light onto either the first pattern or the second pattern. The pattern position information includes position values ​​of the first and second patterns on the substrate and is pre-stored in the controller.

[0020] According to an exemplary embodiment, the heating unit may further include a body in which the image acquisition component and the emission component are mounted, and the position of the body is changed by a driving force generated by the moving component.

[0021] According to an exemplary embodiment, the substrate processing apparatus may further include a controller for controlling the heating unit, the liquid supply unit, and the support unit. The controller may control the liquid supply unit to supply the processing liquid onto the substrate to form a liquid film, and the controller may control the heating unit to heat the substrate while the liquid film is formed.

[0022] According to an exemplary embodiment, the substrate processing apparatus may further include a bowl having a processing space and providing a recovery path, wherein the substrate is processed in the processing space and the processing liquid is recovered through the recovery path, wherein the support unit may be configured to support the substrate in the processing space.

[0023] According to an exemplary embodiment, the support unit may include: a rotating shaft; a support plate coupled to the rotating shaft; and at least one support pin mounted in the support plate and supporting the edge region of the substrate having a quadrilateral shape.

[0024] According to an exemplary embodiment, the support pin may include: a first surface that supports the lower portion of the substrate; and a second surface that faces the side portion of the substrate to restrict the lateral movement of the substrate when the substrate is rotated.

[0025] Another exemplary embodiment of the present invention provides a substrate processing apparatus, the substrate processing apparatus comprising: a support unit for supporting and rotating a substrate, on which a first pattern and a second pattern are formed, the second pattern performing a function different from that of the first pattern; a heating unit for heating the substrate; and a liquid supply unit for supplying etching solution to either the first pattern or the second pattern.

[0026] According to an exemplary embodiment, the liquid supply unit may include: a discharge unit for supplying etching fluid in the form of droplets; and a moving unit for changing the position of the discharge unit.

[0027] According to an exemplary embodiment, the substrate processing apparatus may further include a controller for controlling the support unit, the heating unit, and the liquid supply unit. The liquid supply unit may include an image acquisition component that acquires images of at least one or more reference marks marked on the substrate and transmits the acquired images to the controller. The controller can extract substrate position information from the images and controls the moving component based on the substrate position information and pattern position information, such that the discharge unit discharges the etching liquid to either the first pattern or the second pattern. The pattern position information includes the position values ​​of the first pattern and the second pattern in the substrate and is pre-stored in the controller.

[0028] According to an exemplary embodiment, the controller can control the support unit so that the substrate does not rotate while the liquid supply unit supplies the etching solution to the substrate.

[0029] According to an exemplary embodiment, the substrate processing apparatus may include: a rotating shaft having a hollow portion; a chuck stage coupled to the rotating shaft; and a window disposed above the chuck stage, wherein the heating unit may include a heating unit disposed between the chuck stage and the window.

[0030] According to an exemplary embodiment, the heating unit may be an IR lamp or an LED lamp.

[0031] Another exemplary embodiment of the present invention provides a substrate processing method, the substrate processing method comprising: an etching operation of etching a substrate, wherein a first pattern and a second pattern different from the first pattern are formed on the substrate; and a cleaning operation of cleaning the substrate, wherein the etching operation comprises (a) supplying an etching solution to either the first pattern or the second pattern, or (b) supplying an etching solution to the substrate and heating either the first pattern or the second pattern, such that the etching rate of the first pattern and the etching rate of the second pattern are different from each other.

[0032] According to an exemplary embodiment, in operation (a), the first pattern and the second pattern may be heated, but the substrate may not be rotated while the etching solution is being supplied.

[0033] According to an exemplary embodiment, in operation (b), the substrate may not be rotated when heating either the first pattern or the second pattern.

[0034] According to an exemplary embodiment of the present invention, the substrate can be processed effectively.

[0035] Furthermore, according to an exemplary embodiment of the present invention, processing deviations of patterns formed on a substrate can be minimized.

[0036] Furthermore, according to an exemplary embodiment of the present invention, the line width of the pattern formed on the substrate can be made uniform.

[0037] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0038] Figure 1 This is a schematic diagram illustrating an example of a mask that can be used in an exposure process.

[0039] Figure 2 To show about Figure 1 A schematic diagram of the normal distribution of the line widths of the first and second patterns.

[0040] Figure 3 A top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown schematically.

[0041] Figure 4 For illustrative purposes, the setting is shown. Figure 3 A schematic diagram of an exemplary embodiment of a substrate processing apparatus in a liquid processing chamber.

[0042] Figure 5 Viewed from above Figure 4 A schematic diagram of the support unit and the mask.

[0043] Figure 6 This is a schematic diagram illustrating a substrate processing method according to an exemplary embodiment of the present invention.

[0044] Figure 7 To show in Figure 5 A schematic diagram illustrating an example of supplying processing solution to the substrate during an etching operation.

[0045] Figure 8 To show in Figure 5 A schematic diagram of an example of an image acquired by an image acquisition component before a pattern is formed on a substrate by heating during an etching operation.

[0046] Figure 9 To show in Figure 5 A schematic diagram of the pattern formed on the substrate by heating during the etching process.

[0047] Figure 10 To show in Figure 5 This is a schematic diagram showing the state of the processing solution being supplied to the substrate during the cleaning operation.

[0048] Figure 11 For illustrative purposes, the setting is shown. Figure 3 A schematic diagram of another exemplary embodiment of the substrate processing apparatus in the liquid processing chamber.

[0049] Figure 12 To show in Figure 5 A schematic diagram of another example of supplying processing solution to the substrate during an etching operation. Detailed Implementation

[0050] Hereinafter, exemplary embodiments of the invention will be described more fully with reference to the accompanying drawings, which illustrate exemplary embodiments of the invention. However, the invention may be implemented differently and is not limited to the following embodiments. In the following description of the invention, detailed descriptions of known functions and configurations incorporated herein are omitted to avoid obscuring the subject matter of the invention. Furthermore, throughout the drawings, the same reference numerals are used for components having similar functions and operations.

[0051] Unless explicitly stated otherwise, the term "comprising," and variations such as "including" or "having," will be understood to mean including the stated elements but not excluding any other elements. It will be appreciated that the terms "comprising" and "having" are intended to specify the presence of the features, quantities, steps, operations, constituent elements and components, or combinations thereof, described in the specification, without excluding the possibility of one or more other features, quantities, steps, operations, constituent elements and components, or combinations thereof, pre-existing or added.

[0052] The singular expressions used in this document include plural expressions unless they have a clearly contradictory meaning in the context. Therefore, for clarity, the shape and size of elements in the accompanying figures may be exaggerated.

[0053] Terms such as "first" and "second" are used to describe various component elements, but these component elements are not limited by these terms. These terms are only used to distinguish one component element from another. For example, without departing from the scope of the invention, a first component element may be named a second component element, and similarly, a second component element may be named a first component element.

[0054] It should be understood that when a component is described as "coupled" or "connected" to another component, that component may be directly coupled to or connected to the other component, but there may be an intervening element. Conversely, when a component is "directly coupled" or "directly connected" to another component, it should be understood that there is no intervening element. Other expressions describing relationships between components, such as "between" and "exactly between," or "proximately to" and "directly proximate to," should be interpreted similarly.

[0055] The terms used herein (including technical and scientific terms) have the same meanings as commonly understood by one of ordinary skill in the art, unless otherwise defined. Terms defined in a general dictionary shall be interpreted as having meanings that correspond to their meanings in the relevant technical context, and should not be construed as having ideal or overly formal meanings unless explicitly defined in this application.

[0056] In the following text, reference will be made to Figures 3 to 12 Exemplary embodiments of the present invention are described below.

[0057] Figure 3 A top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown schematically.

[0058] refer to Figure 3 The substrate processing apparatus includes an indexing module 10, a processing module 20, and a controller 30. When viewed from above, the indexing module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the indexing module 10 and the processing module 20 are arranged is referred to as the first direction X, the direction perpendicular to the first direction X when viewed from above is referred to as the second direction Y, and the direction perpendicular to both the first direction X and the second direction Y is referred to as the third direction Z.

[0059] The indexing module 10 transfers the substrate M from the container C containing the substrate M to the processing module 20, and transfers the substrate M that has already been fully processed in the processing module 20 back to the container C. The longitudinal direction of the indexing module 10 is arranged in the second direction Y. The indexing module 10 includes a loading port 12 and an indexing frame 14. Based on the indexing frame 14, the loading port 12 is located on the opposite side of the processing module 20. The container C containing the substrate M is placed on the loading port 12. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged along the second direction Y.

[0060] As container C, an airtight container (such as a front-open unified pod (FOUP)) can be used. Container C can be placed on loading port 12 by means of a conveying device (not shown) such as an overhead conveyor, overhead transport or automated guided vehicle, or by an operator.

[0061] An indexing robot 120 is provided to an indexing frame 14. A guide rail 124 is disposed in the indexing frame 14, the longitudinal direction of the guide rail being disposed in a second direction Y, and the indexing robot 120 is configured to move on the guide rail 124. The indexing robot 120 includes a hand 122 on which a substrate M is placed, and the hand 122 is configured to move forward and backward, rotate about a third direction Z, and move along the third direction Z. A plurality of hands 122 are arranged to be spaced apart from each other in the vertical direction and are capable of moving forward and backward independently.

[0062] The controller 30 can control the substrate processing apparatus. The controller 30 may include a process controller, a user interface, a display, and a storage unit. The process controller is composed of a microprocessor (computer) that controls the substrate processing apparatus. The user interface is composed of a keyboard where the operator performs command input operations to manage the substrate processing apparatus. The display visualizes and displays the operating status of the substrate processing apparatus. The storage unit stores control programs for executing processes performed in the substrate processing apparatus under the control of the process controller, or programs (i.e., processing schemes) for executing processes in various components based on various data and processing conditions. Furthermore, the user interface and storage unit can be connected to the process controller. The processing scheme can be stored in a storage medium in the storage unit, which can be a hard disk, a removable disk such as a CD-ROM or DVD, or a semiconductor memory such as flash memory.

[0063] The controller 30 can control the substrate processing apparatus to perform the substrate processing method described below. For example, the controller 30 can control the configuration provided to the liquid processing chamber 400 to perform the substrate processing method described below.

[0064] Processing module 20 includes a buffer unit 200, a transfer chamber 300, and a liquid processing chamber 400. The buffer unit 200 provides space for the substrate M loaded into and unloaded from the processing module 20 to temporarily reside. The liquid processing chamber 400 performs a liquid processing process on the substrate M by supplying liquid to it. The transfer chamber 300 transfers the substrate M between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0065] The longitudinal direction of the transfer chamber 300 can be arranged in the first direction X. The buffer unit 200 can be arranged between the index module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 can be arranged on one side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 can be arranged along the second direction Y. The drying chamber 500 and the transfer chamber 300 can be arranged along the second direction Y. The buffer unit 200 can be positioned at one end of the transfer chamber 300.

[0066] According to the example, the liquid processing chamber 400 can be disposed on both sides of the transfer chamber 300. On one side of the transfer chamber 300, the liquid processing chamber 400 can be disposed in an A×B arrangement (each of A and B is a natural number greater than 1) in the first direction X and the third direction Z.

[0067] The transfer chamber 300 includes a transfer robot 320. A guide rail 324 is disposed in the transfer chamber 300, with its longitudinal direction arranged in a first direction X, and the transfer robot 320 is configured to move on the guide rail 324. The transfer robot 320 includes a hand 322 on which a base plate M is placed, and the hand 322 is configured to move forward and backward, rotate about a third direction Z, and move along the third direction Z. A plurality of hands 322 are arranged to be spaced apart in the vertical direction, and the hands 322 can move forward and backward independently of each other.

[0068] The buffer unit 200 includes a plurality of buffers 220 on which the substrate W is placed. The buffers 220 may be arranged to be spaced apart from each other along a third direction Z. The front and rear of the buffer unit 200 are open. The front is the face facing the index module 10, and the rear is the face facing the transfer chamber 300. The indexing robot 120 can pass through the front to approach the buffer unit 200, and the transfer robot 320 can pass through the rear to approach the buffer unit 200.

[0069] The substrate processing apparatus disposed in the liquid processing chamber 400 will be described in detail below. The object to be processed in the liquid processing chamber 400 can be a substrate of any of the following: a wafer, glass, or a photomask. Hereinafter, the invention will be described based on a photomask as an example, which is the "frame" used in the exposure process of the substrate M processed in the liquid processing chamber 400. Further, as an example, the invention will be described based on the case of performing Fine Critical Dimension Correction (FCC), which is the final operation in the mask manufacturing process used for the exposure process.

[0070] Figure 4 For illustrative purposes, the setting is shown. Figure 3 A schematic diagram of an exemplary embodiment of a substrate processing apparatus in a liquid processing chamber, and Figure 5 Viewed from above Figure 4 A schematic diagram of the support unit and the mask.

[0071] refer to Figure 5 The substrate M is described as the object to be processed. The substrate M may have a quadrilateral shape. The substrate M may be a photomask, which serves as a "frame" used during the exposure process. At least one reference mark AK may be marked on the substrate M. The reference mark AK may be a mark used for aligning the substrate M, referred to as an alignment key. Further, the reference mark AK may be a mark used to extract positional information of the substrate M. For example, the image acquisition member 465, described later, can acquire an image by photographing the reference mark AK and transmit the acquired image to the controller 30. The controller 30 can analyze the image including the reference mark AK to detect the precise position of the substrate M. Further, the reference mark AK may also be used during the transfer of the substrate M to identify its position.

[0072] Cells C can be formed on substrate M. At least one cell C, or multiple cells C, can be formed. Multiple patterns can be formed within each cell C. The patterns formed in cell C can include an exposure pattern EP and a first pattern P1. The exposure pattern EP can be used to form a real pattern on substrate M. The first pattern P1 can be a monitoring pattern that allows checking whether light emission using the exposure pattern EP is performed correctly in the exposure process. The first pattern P1 can also be referred to as a critical dimension monitoring macro. The second pattern P2 can be a pattern used to set the conditions used when setting up the exposure equipment. The second pattern P2 can also be referred to as an anchor pattern.

[0073] The substrate M loaded into and processed in the liquid processing chamber 400 can be a pre-treated substrate M. The linewidths of the first pattern P1 and the second pattern P2 of the substrate M loaded into the liquid processing chamber 400 can be different from each other. For example, the linewidth of the first pattern P1 can be a first width (e.g., 69 nm). The linewidth of the second pattern P2 can be a second width (e.g., 68.5 nm).

[0074] Reference Figure 4 and Figure 5 The present invention describes a substrate processing apparatus disposed in a liquid processing chamber 400 according to an exemplary embodiment. The substrate processing apparatus disposed in the liquid processing chamber 400 may include a support unit 420, a bowl-shaped member 430, a lifting unit 440, a liquid supply unit 450, and a heating unit 460.

[0075] The support unit 420 can support the substrate M in the processing space 431 of the bowl-shaped member 430, which will be described later. The support unit 420 can support the substrate M. The support unit 420 can rotate the substrate M. The support unit 420 may include a support plate 421, a rotation shaft 422, a rotation actuator 423, a lower liquid supply unit 424, a support pin 425, and a bearing 426.

[0076] The support plate 421 may have a plate shape. The support plate 421 may provide a region in which support pins 425 for the support base plate M can be mounted. The support plate 421 can be rotated by coupling to a rotation shaft 422. When viewed from above, an opening is formed in the central region of the support plate 421 into which the lower liquid supply unit 424, described below, is inserted. This opening may be formed to extend from the upper part of the support plate 421 to the lower part of the support plate. That is, the opening formed in the central region of the support plate 421 may be formed through the support plate 421.

[0077] The rotating shaft 422 can be a hollow shaft with a hollow space 422a. The rotating shaft 422 can be coupled to the support plate 421. The rotating shaft 422 can receive driving force from the rotary actuator 423 to rotate the support plate 421, the rotary actuator being a hollow motor. The lower liquid supply unit 424 can be inserted into the hollow space 422a of the rotating shaft 422.

[0078] The lower liquid supply unit 424 can supply processing fluid to the lower part of the substrate M. The processing fluid can be a processing liquid or a processing gas. The processing fluid supplied to the lower part of the substrate M can include chemicals or rinsing solutions. The chemicals can be liquids that are acidic or alkaline. Chemicals can include sulfuric acid, phosphoric acid, hydrofluoric acid, and ammonium hydroxide. The rinsing solution can be pure water. The processing gas can be an inert gas. The processing gas can also dry the lower part of the substrate M.

[0079] The lower liquid supply unit 424 may include a hollow shaft 424a, a cover 424b, a fluid discharge unit 424c, and a fluid supply line 424d. The hollow shaft 424a may have a hollow region 424a-1 therein. At least a portion of the fluid supply line 424d, described later, may be disposed in the hollow region 424a-1. The hollow shaft 424a can rotate independently of the rotating shaft 422 and the support plate 421. The hollow shaft 424a can be inserted into the hollow space 422a of the rotating shaft 422 and the opening of the support plate 421. The hollow shaft 424a may be spaced apart from the rotating shaft 422 and the support plate 421. A bearing 426 may be disposed in the space where the hollow shaft 424a and the support plate 421 face each other.

[0080] A cover 424b can be installed above the hollow shaft 424a. The cover 424b prevents the processing liquid supplied to the substrate M from flowing into the hollow space 422a or the hollow region 424a-1. The cover 424b may be provided with a fluid discharge unit 424c, which is fluidly connected to the fluid supply line 424d that conveys the processing fluid. The fluid discharge unit 424c may have a tubular shape.

[0081] Support unit 425 can support substrate M. Support pin 425 can be mounted on support plate 421. When viewed from above, support pin 425 can have a generally circular shape. And, when viewed from above, support pin 425 can have a shape in which the portion corresponding to the edge region of substrate M is recessed in the downward direction. That is, support pin 425 includes a first surface 425a supporting the lower part of the edge region of substrate M, and a second surface 425b facing the side of the edge region of substrate M, so as to restrict the movement of substrate M in the lateral direction when substrate M is rotated. At least one support pin 425 can be provided. Multiple support pins 425 can be provided. The number of support pins 425 can be set to correspond to the number of edge regions of substrate M having a quadrilateral shape. Support pin 425 supports substrate M to separate the lower surface of substrate M and the upper surface of support plate 421. In addition, support pin 425 can be configured such that the distal end of fluid discharge unit 424c of lower fluid supply unit 424 and the lower surface of substrate M are spaced apart from each other.

[0082] The bowl-shaped component 430 may have a cylindrical shape with an open top. The bowl-shaped component 430 has a processing space 431, and the substrate M can undergo liquid processing and heat treatment in the processing space 431. The lifting unit 440 adjusts the relative height between the bowl-shaped component 430 and the substrate M supported by the support unit 420.

[0083] According to the example, the bowl-shaped component 430 has a plurality of recovery containers 432, 434, and 436. Each of the recovery containers 432, 434, and 436 has a recovery space for recovering liquid used to process the substrate. Each of the recovery containers 432, 434, and 436 is arranged in an annular shape around the support unit 440. During the liquid processing process, the processing liquid sputtered by the rotation of the substrate M is introduced into the recovery space through the inlets 432a, 434a, and 436a of the recovery containers 432, 434, and 436. According to the example, the bowl-shaped component 430 has a first recovery container 432, a second recovery container 434, and a third recovery container 436. The first recovery container 432 is arranged around the support unit 440, the second recovery container 434 is arranged around the first recovery container 432, and the third recovery container 436 is arranged around the second recovery container 434. The second inlet 434a can be positioned above the first inlet 432a, through which liquid is led to the second recovery container 434 and through the first inlet to the first recovery container 432. The third inlet 436a can be positioned above the second inlet 434a, through which liquid is led to the third recovery container 436.

[0084] The liquid supply unit 450 can supply a processing liquid for liquid treatment of the substrate M. The processing liquid can be an etching solution, a cleaning solution, or a rinsing solution. The etching solution can be a chemical. In the etching operation S20, described later, the etching solution can be supplied to the substrate M. The etching solution can etch patterns formed on the substrate M. The etching solution can also be called an etchant. The cleaning solution or rinsing solution can clean the substrate M. After supplying the cleaning solution, a rinsing solution can be supplied to the substrate M. The cleaning solution or rinsing solution can be a known chemical solution.

[0085] The liquid supply unit 450 may include a first body 451, a nozzle 453, and a first moving member 457. The nozzle 453 may be mounted on the first body 451. The position of the first body 451 can be changed by receiving a driving force from the first moving member 457. The position of the first body 451 may be changed along a first direction X and / or a second direction Y. In some cases, the position of the first body 451 may also be changed along a third direction Z. The first body 451 may be an arm or guide body that moves along a track. The type of the first body 451 may be modified to a known shape, wherein the nozzle 453 is mounted and the driving force is transmitted from the first moving member 457. The nozzle 453 may supply at least one of the processing liquids described above. Additionally, multiple nozzles 453 may be provided, and the cleaning fluid, rinsing fluid, and etching fluid described above may be discharged from each nozzle 453 separately.

[0086] The heating unit 460 can heat the substrate M supported on the support unit 420. For example, the heating unit 460 can be configured to heat either the first pattern P1 or the second pattern P2 of the substrate M. For example, the heating unit 460 can be configured to heat the second pattern P2 between the first pattern P1 and the second pattern P2.

[0087] The heating unit 460 may include a second body 461, a transmitting member 463, an image acquiring member 465, and a second moving member 467. The transmitting member 463 and the image acquiring member 465 may be mounted on the second body 461. The position of the second body 461 can be changed by receiving a driving force from the second moving member 467. For example, the position of the second body 461 may be changed along a first direction X and / or a second direction Y. In some cases, the position of the second body 461 may also be changed along a third direction Z. The second body 461 may be an arm or a guide body that moves along a track. The type of the second body 461 may be modified differently to a known shape, wherein the transmitting member 463 and / or the image acquiring member 465 are mounted, and the driving force is transmitted from the second moving member 467.

[0088] The emitting member 463 can emit light with thermal energy onto the substrate M. The width of the light emitted by the emitting member 463 can have a very fine width. For example, the emitting member 463 can be configured to emit a laser L.

[0089] Image acquisition component 465 can be mounted on the second body 461 and move together with the transmitting component 463. Image acquisition component 465 can acquire an image of the upper surface of the substrate M. Image acquisition component 465 can acquire an image of the substrate M and transmit the acquired image to the controller 30. Image acquisition component 465 can be an image acquisition component. Image acquisition component 465 can be a camera.

[0090] Figure 6 This is a schematic diagram illustrating a substrate processing method according to an exemplary embodiment of the present invention. (Refer to...) Figure 6 The substrate processing method according to an exemplary embodiment of the present invention may include substrate loading operation S10, etching operation S20, cleaning operation S30 and substrate unloading operation S40.

[0091] The substrate loading operation S10 can be an operation of loading the substrate M into the liquid processing chamber 400 to support the substrate M on the support unit 420.

[0092] Etching operation S20 can be an operation in which the liquid supply unit 450 supplies an etching solution, such as chemical C, to the substrate M. Etching operation S20 can be an FCC process used to calibrate the linewidth difference between the first pattern P1 and the second pattern P2 described above. In etching operation S20, the support unit 420 may not rotate the substrate M. In the etching operation, the liquid supply unit 450 can supply chemical C, which is the etching solution, to the center of the substrate M, which is not rotated (see [link to FCC process]). Figure 7 The nozzle 453 of the liquid supply unit 450 can remain stationary and can supply etching solution to the central region of the substrate M. The etching solution supplied to the central region of the substrate M can diffuse and cover the entire upper surface of the substrate M. Alternatively, the liquid supply unit 450 can supply a relatively small amount of etching solution, such that the etching solution covers the entire upper surface of the substrate M, but the amount of etching solution flowing down is not large. If necessary, the etching solution can also be supplied to the entire upper surface of the substrate M by changing the position of the nozzle 453.

[0093] Subsequently, the image acquisition member 465 of the heating unit 460 can acquire an image of the substrate M. For example, the image acquisition member 465 can acquire an image of the reference mark AK marked on the substrate M (see...). Figure 8 Image acquisition component 465 can acquire at least one image of reference marker AK. Image acquisition component 465 can acquire an image of reference marker AK even if the position of reference marker AK changes, and image acquisition component 465 can move upwards to capture a wider range, thereby acquiring an image of reference marker AK immediately. The image captured by image acquisition component 465 can be transmitted to controller 30.

[0094] The controller 30 can extract the position information of the substrate M from the image. For example, the controller 30 can analyze the received image to accurately extract the location where the substrate M is supported and the range of the processing area on the substrate M that needs to be processed. Additionally, the position information of the pattern can be pre-stored in the controller 30. The pattern position information may include information related to the position values ​​of the first pattern P1, the second pattern P2, and the exposure pattern EP in the substrate M. That is, the controller 30 can accurately extract the position of the substrate M (i.e., extract the substrate position information) from the image transmitted by the image acquisition member 465 and combine the extracted substrate position information with the pre-stored pattern position information to specify the position of the second pattern P2, which is the area requiring local heating.

[0095] The heating unit 460 can emit light (such as laser L) onto a selected pattern in a pattern on a substrate M, which has a liquid film formed over the entire area of ​​the substrate M by an etching solution (see [link]). Figure 9For example, the heating unit 460 can emit laser L to either the first pattern P1 or the second pattern P2. Alternatively, the heating unit 460 can emit laser L to the second pattern P2 between the first pattern P1 and the second pattern P2. In this case, the emission position of laser L can be specified by a control value calculated by the controller 30 based on the substrate position information and pattern position information described above.

[0096] Furthermore, since the laser L needs to be emitted onto a portion of the substrate M (e.g., the area where the second pattern P2 is formed in the substrate M), the substrate M does not rotate and its position can be fixed when the heating unit 460 emits the laser L during the etching operation S20. In the etching operation S20, the etching solution is supplied to the entire area of ​​the substrate M, and the laser L is emitted only onto a portion of the substrate M (e.g., the area where the second pattern P2 is formed), causing the temperature of the substrate to rise in the area where the second pattern P2 is formed. Therefore, the etching capability of the etching solution for the second pattern P2 is improved. Thus, the linewidth of the first pattern P1 can be changed from a first width (e.g., 69 nm) to a target linewidth (e.g., 70 nm). Further, the linewidth of the second pattern P2 can be changed from a second width (e.g., 68.5 nm) to a target linewidth (e.g., 70 nm). That is, by improving the etching capability of a portion of the substrate M, the deviation in the linewidth of the pattern formed on the substrate M can be minimized.

[0097] Furthermore, during etching operation S20, process byproducts may be generated on substrate M. Additionally, these byproducts may enter the lower region of substrate M. In some cases, the etching solution supplied to substrate M may enter the lower region of substrate M. Therefore, a cleaning operation S30 can be performed after etching operation S20. In the cleaning operation S30 performed after etching operation S20, support unit 420 can rotate substrate M, liquid supply unit 450 supplies cleaning solution W to the upper part of the rotating substrate M, and lower liquid supply unit 424 supplies processing solution to the lower part of substrate M.

[0098] When the processing of substrate M is completed, substrate unloading operation S40, which unloads substrate M from liquid processing chamber 400, can be performed.

[0099] In the examples described above, the case where the etching solution is supplied to the entire area of ​​the substrate M and then a portion of the substrate M is heated by the laser L is presented as an example, but the present invention is not limited thereto. For example, the etching solution can be supplied after the laser L is first emitted.

[0100] In the examples described above, the case where the etching solution is supplied to the entire area of ​​the substrate M and then a portion of the substrate M is heated by the laser L has been presented as an example, but the present invention is not limited thereto. For example, the entire area of ​​the substrate M can be heated, and the etching solution can be supplied to a portion of the substrate M. For example, as... Figure 11 As shown, the heating unit 470 can be disposed within the support plate 421. For example, the support plate 421 may include a chuck stage 421a coupled to the rotating shaft 422 for rotation, and a quartz window 421b disposed on the chuck stage 421a. The chuck stage 421a and the quartz window 421b can be combined with each other to form an internal space, and the heating unit 470 can be disposed within the internal space. The heating unit 470 may include a reflector 471 coupled to the hollow shaft 424a and independent of the rotation of the rotating shaft 422a, the heating unit 472, and the temperature control unit 473, which controls the heating unit 472, fixedly mounted on the reflector 471, to generate heat. The heating unit 472 may be an IR lamp or an LED lamp.

[0101] The liquid supply unit 480 may include a discharge unit 481, an image acquisition unit 482, and a moving unit 483. The discharge unit 481 may be the head of a spray module capable of discharging an etching solution, specifically chemical C, in droplets. The image acquisition unit 482 may perform functions similar to those of the image acquisition member 465. For example, the image acquisition unit 482 may assist in discharging the etching solution from the discharge unit 481 to a portion of the substrate M, such as the area forming the second pattern P2 of the substrate M. The moving unit 483 may include a moving body 483a and a moving driver 483b. The moving unit 483 may move the position of the discharge unit 481 in a first direction X and / or a second direction Y. According to another exemplary embodiment of the invention, the entire area of ​​the substrate M can be heated by the heating unit 470, and the etching solution can be supplied only to a portion of the area of ​​the substrate M. Therefore, an FCC process can be performed on a portion of the substrate M. Furthermore, because the etching solution needs to be supplied only to a portion of the substrate M, the substrate M does not need to rotate while the liquid supply unit 480 supplies the etching solution.

[0102] That is, according to an exemplary embodiment of the present invention, an etching solution is supplied to the entire area of ​​the substrate M, and either the first pattern P1 or the second pattern P2 is heated, such that the etching rate of the first pattern P1 and the etching rate of the second pattern P2 are different from each other. Furthermore, according to another exemplary embodiment of the present invention, the entire area of ​​the substrate M is heated, and an etching solution is supplied to either the first pattern P1 or the second pattern P2, such that the etching rate of the first pattern P1 and the etching rate of the second pattern P2 are different from each other.

[0103] In the examples described above, the case where the substrate M does not rotate when the liquid supply unit 450 supplies etching solution during etching operation S20 has been illustrated as an example; however, the present invention is not limited thereto. For example, as... Figure 12 As shown, the substrate M can also be rotated during the etching operation S20 when the liquid supply unit 450 supplies etching solution.

[0104] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, the foregoing can be modified or altered within the scope of the inventive concept disclosed herein, equivalent to the scope of this disclosure, and / or within the scope of technology or knowledge in the art. The foregoing exemplary embodiments describe the best state for presenting the technical essence of the invention, and various variations are possible for specific fields of application and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should also be construed as including other exemplary embodiments.

Claims

1. A substrate processing apparatus comprising: a support unit for supporting and rotating a substrate on which a first pattern and a second pattern different from the first pattern are formed; a liquid supply unit for supplying a processing liquid to the substrate supported on the support unit; a heating unit for heating either one of the first pattern and the second pattern, and a controller for controlling the heating unit, the liquid supply unit, and the support unit, wherein the heating unit includes: an emission member for emitting light having thermal energy to the substrate; and a movement member for changing a position of the emission member, wherein the controller controls the support unit so as not to rotate the substrate in a case where the emission member emits the light to the substrate.

2. The substrate processing apparatus according to claim 1, wherein The emission member is configured so that the light emitted to the substrate is a laser.

3. The substrate processing apparatus according to claim 1, wherein The controller controls the support unit so as to rotate the substrate in a case where the liquid supply unit supplies a cleaning liquid to the substrate. 4.The substrate processing apparatus according to claim 1, wherein the heating unit includes an image acquisition member that acquires an image of at least one or more reference marks marked on the substrate, and transmits the acquired image to the controller, and the controller extracts substrate position information from the image, and the controller controls the movement member so that the emission member emits the light to either one of the first pattern and the second pattern based on the substrate position information and pattern position information, the pattern position information including position values of the first pattern and the second pattern in the substrate, and the pattern position information being pre-stored in the controller.

5. The substrate processing apparatus according to claim 4, wherein The heating unit further includes a body in which the image acquisition member and the emission member are installed, and a position of the body is changed by a driving force generated by the movement member. 6.The substrate processing apparatus according to claim 1, wherein the controller controls the liquid supply unit to supply the processing liquid to the substrate to form a liquid film, and the controller controls the heating unit so as to heat the substrate in a state where the liquid film is formed. 7.The substrate processing apparatus according to claim 1, further comprising: a bowl having a processing space in which the substrate is processed, and providing a recovery path through which the processing liquid is recovered, wherein the support unit is configured to support the substrate in the processing space.

8. The substrate processing apparatus according to claim 1, wherein The support unit includes: a rotation shaft; a support plate coupled to the rotation shaft; and at least one support pin installed in the support plate and supporting an edge area of the substrate having a quadrilateral shape. 9.The substrate processing apparatus according to claim 8, wherein, the support pin includes: a first surface supporting a lower portion of the substrate; and a second surface facing a side portion of the substrate so as to restrict movement of the substrate in a lateral direction when the substrate is rotated. 10.A substrate processing apparatus comprising: a support unit for supporting and rotating a substrate on which a first pattern and a second pattern performing a function different from that of the first pattern are formed; a heating unit for heating the substrate; a liquid supply unit for supplying an etching liquid to either one of the first pattern and the second pattern, and a controller for controlling the support unit, the heating unit, and the liquid supply unit, wherein the liquid supply unit includes: a discharge unit for supplying the etching liquid in the form of droplets; and a movement unit for changing a position of the discharge unit, wherein the controller controls the support unit so as not to rotate the substrate in a case where the liquid supply unit supplies the etching liquid to the substrate.

11. The substrate processing apparatus according to claim 10, wherein the liquid supply unit includes an image acquisition member that acquires an image of at least one or more reference marks marked on the substrate, and transmits the acquired image to the controller, and the controller extracts substrate position information from the image, and the controller controls the movement unit so that the discharge unit discharges the etching liquid to either one of the first pattern and the second pattern based on the substrate position information and pattern position information including position values of the first pattern and the second pattern in the substrate, and the pattern position information is pre-stored in the controller.

12. The substrate processing apparatus according to claim 10, further comprising: a rotation shaft having a hollow portion; a chuck table coupled to the rotation shaft; and a window disposed above the chuck table, wherein the heating unit includes a heating unit disposed between the chuck table and the window. The heating unit is an IR lamp or an LED lamp.

13. The substrate processing apparatus of claim 12, wherein, 14. A substrate processing method comprising: an etching operation of etching a substrate on which a first pattern and a second pattern different from the first pattern are formed; and a cleaning operation of cleaning the substrate, wherein the etching operation includes (a) supplying an etching liquid to either one of the first pattern and the second pattern, or (b) supplying an etching liquid to the substrate and heating either one of the first pattern and the second pattern so that etching rates of the first pattern and the second pattern are different from each other, wherein in operation (a), the first pattern and the second pattern are heated, but the substrate is not rotated in a case where the etching liquid is supplied, ​ ​ wherein in operation (b), the substrate is not rotated while either the first pattern or the second pattern is heated. wherein in operation (b), the substrate is not rotated while either the first pattern or the second pattern is heated.

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