Components for semiconductor manufacturing equipment

Abstract

The present invention provides a component for semiconductor manufacturing equipment, which uses protective materials to protect the adhesive material that bonds the ceramic heater to the metal base, and prevents the occurrence of adverse conditions caused by the difference in thermal expansion between the adhesive material and the protective material. The focusing ring (FR) mounting table as a component for semiconductor manufacturing equipment includes: a circular FR ceramic heater, a FR cooling plate as a metal base, an adhesive sheet as an adhesive material for bonding the FR cooling plate and the FR ceramic heater, and an inner peripheral side and outer peripheral side protective material that are adhesively arranged between the FR ceramic heater and the FR cooling plate in a manner surrounding the adhesive sheet. An inner peripheral side gap layer is provided between the adhesive sheet and the inner peripheral side protective material. An outer peripheral side gap layer is provided between the adhesive sheet and the outer peripheral side protective material.

Description

Technical Field

[0001] The present invention relates to a member for semiconductor manufacturing equipment. Background Art

[0002] A wafer processing device is used to perform CVD, etching, etc. on a wafer using plasma. Patent document 1 discloses a wafer processing device comprising: a metal base formed by connecting a disk-shaped center-side metal base and an annular outer-side metal base; a disk-shaped center-side electrostatic chuck heater disposed on the upper surface of the center-side metal base; and an annular outer-side electrostatic chuck heater disposed on the upper surface of the outer-side metal base. In this wafer processing device, a disk-shaped wafer is electrostatically adsorbed on the upper surface of the center-side electrostatic chuck heater, and an annular focusing ring is electrostatically adsorbed on the upper surface of the outer-side electrostatic chuck heater. In addition, the temperature of the wafer and the temperature of the focusing ring are controlled separately.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-207979 Summary of the invention

[0006] Problems to be solved by the invention

[0007] The peripheral metal base is bonded to the peripheral electrostatic chuck heater by an adhesive sheet. The adhesive sheet may corrode in the use environment. Therefore, it is considered to prevent the corrosion of the adhesive sheet by filling the protective material in a manner surrounding the periphery (inner periphery and outer periphery) of the adhesive sheet. Such a technology is not currently known within the scope of the present inventors. When the protective material is filled in a manner surrounding the periphery of the adhesive sheet, the adhesive sheet and the protective material are tightly bonded and integrated. In this state, when the peripheral electrostatic chuck heater reaches a high temperature, the adhesive sheet and the protective material will extend outward in the radial direction. Here, when the CTE (thermal expansion coefficient) of the adhesive sheet is greater than the CTE of the protective material, the elongation of the adhesive sheet is greater than the elongation of the protective material, so at the inner periphery of the adhesive sheet, the protective material is stretched by the adhesive sheet. As a result, sometimes peeling and cracking occur in at least one of the adhesive sheet or the protective material. On the other hand, when the CTE of the adhesive sheet is smaller than the CTE of the protective material, the elongation of the protective material is greater than the elongation of the adhesive sheet, so the adhesive sheet is stretched by the protective material at the periphery of the adhesive sheet. As a result, sometimes peeling or cracking occurs in at least one of the adhesive sheet or the protective material. This is also true for the adhesive sheet between the center-side metal base and the center-side electrostatic chuck heater. It should be noted that such a problem will occur regardless of whether the electrostatic adsorption function is present.

[0008] The present invention is made to solve such a problem, and its main purpose is to protect the adhesive material that bonds the ceramic heater to the metal base with the protective material and prevent the occurrence of malfunctions caused by the difference in thermal expansion between the adhesive material and the protective material.

[0009] Means for solving problems

[0010] A first semiconductor manufacturing apparatus member of the present invention comprises:

[0011] Ceramic heaters in the form of disks or rings;

[0012] Metal base;

[0013] An adhesive material for bonding the metal base and the ceramic heater;

[0014] an adhesive protective material disposed between the ceramic heater and the metal base so as to surround the adhesive material; and

[0015] The anti-adhesion layer is disposed between the adhesive material and the protective material to prevent the adhesive material from adhering to the protective material.

[0016] The semiconductor manufacturing device component is provided with an adhesive protective material surrounding the adhesive material. In addition, an anti-adhesion layer is provided between the adhesive material and the protective material to prevent the adhesive material and the protective material from adhering to each other. Since the adhesive material is protected by the protective material, the corrosion resistance of the adhesive material in the use environment of the semiconductor manufacturing device component is improved. In addition, no matter whether the CTE of the adhesive material is larger or smaller than the CTE of the protective material, the side with smaller CTE will not or will hardly be stretched by the side with larger CTE, so that the adhesive material and the protective material can be prevented from peeling off and cracking. Therefore, the protective material can be used to protect the adhesive material, and the occurrence of adverse conditions caused by the difference in thermal expansion between the adhesive material and the protective material can be prevented.

[0017] In the first semiconductor manufacturing device component of the present invention, the anti-adhesion layer may be a void layer or a non-adhesive layer formed by a material having no adhesive force. The void layer serves to separate the adhesive material from the protective material. The non-adhesive layer formed by a material having no adhesive force serves to prevent or inhibit one of the adhesive material and the protective material from stretching the other. It should be noted that, in addition to materials having no adhesive force at all, "materials having no adhesive force" also include materials having weak adhesive force to the extent that one of the adhesive material and the protective material cannot stretch the other (the same below).

[0018] In the first semiconductor manufacturing device component of the present invention, a chamfered portion may be provided at the edge of the surface of the ceramic heater facing the metal base, and the protective material may be provided in a space surrounded by the chamfered portion and the metal base. In this way, the amount of protective material used can be controlled to be substantially constant.

[0019] In the first semiconductor manufacturing device component of the present invention, a circumferential protrusion may be provided inside the edge of the surface of the metal base facing the ceramic heater, and the protective material may be provided in a space surrounded by the ceramic heater, the circumferential protrusion and the metal base. In this way, the amount of protective material used can be controlled to be substantially constant.

[0020] A second semiconductor manufacturing device component of the present invention comprises:

[0021] Ceramic heaters in the form of disks or rings;

[0022] Metal base;

[0023] an adhesive material for bonding the metal base and the ceramic heater; and

[0024] an adhesive protective material disposed between the ceramic heater and the metal base so as to surround the adhesive material;

[0025] The adhesive material includes: a main portion; a narrow secondary portion provided along the periphery of the main portion and bonded to the protective material; and an anti-adhesion portion provided between the main portion and the secondary portion.

[0026] The semiconductor manufacturing device component is provided with an adhesive protective material surrounding the adhesive material. In addition, the adhesive material has: a main part; a narrow secondary part, which is arranged along the periphery of the main part and is bonded to the protective material; and an anti-adhesion part, which is arranged between the main part and the secondary part. Since the adhesive material is protected by the protective material, the corrosion resistance of the adhesive material in the use environment of the semiconductor manufacturing device component is improved. In addition, regardless of whether the CTE of the adhesive material is larger or smaller than the CTE of the protective material, the force of the side with smaller CTE being stretched by the side with larger CTE is a smaller force acting between the narrow secondary part of the adhesive material and the protective material, so that the adhesive material and the protective material can be prevented from peeling off and cracking. Therefore, the protective material can be used to protect the adhesive material, and the occurrence of adverse conditions caused by the difference in thermal expansion between the adhesive material and the protective material can be prevented.

[0027] In the second semiconductor manufacturing apparatus member of the present invention, the adhesion preventing portion may be provided intermittently along the circumference, or may be provided continuously along the circumference. In this case, the above-mentioned effect can also be obtained.

[0028] In the second semiconductor manufacturing device component of the present invention, the anti-adhesion portion may be a gap portion or a non-adhesive portion formed of a material having no adhesive force. The gap portion plays a role in separating the main portion and the secondary portion of the adhesive material. The non-adhesive portion formed of a material having no adhesive force plays a role in preventing or inhibiting the main portion of the adhesive material from stretching the protective material or the protected material via the secondary portion.

[0029] In the first and second semiconductor manufacturing device components of the present invention, the metal base may also have an insulating film on at least the portion where the protective material is formed on the side surface of the metal base and the surface opposite to the ceramic heater. In this way, it is possible to prevent unexpected discharge from occurring via the metal base. The insulating film preferably has corrosion resistance in the use environment. As an insulating film, for example, a ceramic sprayed film can be cited. Such an insulating film may also be provided over the portion where the adhesive material is formed on the surface of the metal base opposite to the ceramic heater.

[0030] In the first and second semiconductor manufacturing device components of the present invention, the ceramic heater may be a circular ring-shaped component for carrying a focus ring, the adhesive material may be circular ring-shaped, and the protective material may be respectively arranged on the inner circumference and outer circumference of the adhesive material. That is, a focus ring carrier may also be used as a semiconductor manufacturing device component. In the focus ring carrier, when the CTE of the adhesive material is smaller than the CTE of the protective material, an anti-adhesion layer may be provided at least between the outer circumference of the adhesive material and the protective material provided on the outer side thereof, and when the CTE of the adhesive material is larger than the CTE of the protective material, an anti-adhesion layer may be provided at least between the inner circumference of the adhesive material and the protective material provided on the inner side thereof.

[0031] In the first and second semiconductor manufacturing device components of the present invention, the ceramic heater may be a disc-shaped component for mounting a wafer, the adhesive material may be circular, and the protective material may be provided on the outer peripheral side of the adhesive material. That is, a wafer stage may also be used as a semiconductor manufacturing device component. In the wafer stage, when the CTE of the adhesive material is smaller than the CTE of the protective material, the configuration of the present invention may also be used. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a longitudinal cross-sectional view of the wafer processing apparatus 10 .

[0033] Figure 2 It is a top view of the focus ring mounting table 20 .

[0034] Figure 3 yes Figure 2 AA cross-section diagram.

[0035] Figure 4 This is an explanatory diagram of a case where the CTE of the adhesive sheet 25 is larger than the CTE of the inner and outer peripheral protection materials 27i and 27o.

[0036] Figure 5 This is an explanatory diagram of a case where the CTE of the adhesive sheet 25 is smaller than the CTE of the inner and outer peripheral protection materials 27i and 27o.

[0037] Figure 6 It is a cross-sectional view of a modified example of the focus ring mounting table 20 .

[0038] Figure 7 It is a cross-sectional view of a modified example of the focus ring mounting table 20 .

[0039] Figure 8 It is a cross-sectional view of a modified example of the focus ring mounting table 20 .

[0040] Fig. 9 It is a cross-sectional view of a modified example of the focus ring mounting table 20 .

[0041] Fig.10 It is a cross-sectional view of a modified example of the wafer stage 12 .

[0042] Explanation of symbols

[0043] 10 Wafer processing device, 12 Wafer mounting table, 14 Wafer ceramic heater, 14a surface, 14b back side, 14c ceramic substrate, 14d resistance heating element, 15 adhesive sheet, 16 Wafer cooling plate, 16a Wafer cooling plate flange, 16b through hole, 17 protective material, 18 gap, 20 Focusing ring (FR) mounting table, 22 FR ceramic heater, 22a surface, 22b back side, 22c ceramic substrate, 22d resistance heating element, 22i inner circumferential side chamfered portion, 22o outer circumferential side chamfered portion, 24 FR cooling plate, 24a convex portion, 24i inner circumferential side circumferential protrusion, 24o outer side circular protrusion, 25 adhesive sheet, 27i inner side protective material, 27o outer side protective material, 28i inner side gap layer, 28o outer side gap layer, 29i inner side insulating film, 29o outer side insulating film, 48i inner side gap portion, 48o outer side gap portion, 80 chamber, 82 setting plate, 84 bolt, 90 nozzle, 125 adhesive sheet, 125i inner side auxiliary portion, 125m main portion, 125o outer side auxiliary portion, 127i inner side protective material, 127o outer side protective material, 227i inner side protective material, 227o outer side protective material. DETAILED DESCRIPTION

[0044] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Figure 1 is a longitudinal sectional view of the wafer processing apparatus 10, Figure 2 is a top view of the focusing ring mounting platform 20, Figure 3 yes Figure 2 AA cross-section diagram (with partial enlargement), Figure 4 2 is an explanatory diagram of a case where the CTE of the adhesive sheet 25 is larger than the CTE of the inner and outer protective materials 27i and 27o. Figure 5 In the following description, up and down, left and right, front and back are sometimes used for description, but up and down, left and right, front and back are only relative positional relationships.

[0045] The wafer processing apparatus 10 is used to perform CVD, etching, etc. on a wafer W using plasma, and is fixed to a setting plate 82 provided inside a chamber 80 for semiconductor processes. The wafer processing apparatus 10 includes a wafer stage 12 and a focus ring stage 20. Hereinafter, the focus ring is sometimes abbreviated to "FR".

[0046] The wafer mounting table 12 includes a wafer ceramic heater 14 and a wafer cooling plate 16. The wafer cooling plate 16 is bonded to the back surface 14b of the wafer ceramic heater 14 opposite to the front surface 14a as the wafer mounting surface via an adhesive sheet 15. The adhesive sheet 15 is a circular double-sided adhesive tape. Examples of the material of the adhesive sheet 15 include epoxy resin, acrylic resin, silicone resin, and the like.

[0047] The ceramic heater 14 for the chip is a disc-shaped component, and a resistance heating element 14d is buried in a ceramic substrate 14c. The ceramic substrate 14c is a disc-shaped plate made of a ceramic material represented by aluminum oxide, aluminum nitride, yttrium oxide, etc. The chip W is placed on the surface 14a of the ceramic substrate 14c. The resistance heating element 14d is made of a conductive coil or printed pattern, and is wired from one end to the other end without crossing in a single stroke across the entire surface when viewed from above. One end and the other end of the resistance heating element 14d are connected to a pair of power supply rods not shown in the figure that pass through the setting plate 82, the chip cooling plate 16 and the adhesive sheet 15 and are inserted into the ceramic substrate 14c. Voltage is applied to the resistance heating element 14d via the power supply rods.

[0048] The wafer cooling plate 16 is a disc-shaped plate made of a metal represented by aluminum, aluminum alloy, etc., and has a refrigerant passage (not shown) inside for circulating refrigerant. The refrigerant passage is connected to a refrigerant supply passage and a refrigerant discharge passage (not shown) that penetrate the setting plate 82, and the refrigerant discharged from the refrigerant discharge passage returns to the refrigerant supply passage again after temperature adjustment. The wafer cooling plate 16 has a wafer cooling plate flange portion 16a protruding from the outer peripheral surface of the lower end portion (the end portion on the side close to the setting plate 82) of the wafer cooling plate 16 toward the radial outside. A plurality of through holes 16b are provided in the wafer cooling plate flange portion 16a along the circumferential direction.

[0049] The FR stage 20 is separate from the wafer stage 12 and is arranged on the outer periphery of the wafer stage 12. The FR stage 20 includes a FR ceramic heater 22 and a FR cooling plate 24. The FR cooling plate 24 is bonded to the back surface 22b of the FR ceramic heater 22 opposite to the front surface 22a as the FR mounting surface via an adhesive sheet 25. The adhesive sheet 25 is a circular ring-shaped double-sided adhesive tape. Examples of the material of the adhesive sheet 25 include epoxy resin, acrylic resin, silicone resin, and the like.

[0050] The FR ceramic heater 22 has a resistive heating element 22d embedded in a ceramic base 22c. The ceramic base 22c is an annular plate made of the same material as the ceramic base 14c. A focusing ring FR is placed on the surface 22a of the ceramic base 22c. The resistive heating element 22d is made of a conductive coil or printed pattern, and is wired in a single stroke from one end to the other end without crossing over the entire surface when viewed from above. One end and the other end of the resistive heating element 22d are connected to a pair of power supply rods (not shown) that penetrate the setting plate 82, the FR cooling plate 24 and the adhesive sheet 25 and are inserted into the ceramic base 22c. Voltage is applied to the resistive heating element 22d via the power supply rods.

[0051] The FR cooling plate 24 is an annular plate made of a metal represented by aluminum, aluminum alloy, etc., and has a refrigerant passage (not shown) inside which a refrigerant can circulate. The refrigerant passage is connected to the refrigerant supply passage and the refrigerant discharge passage that penetrate the setting plate 82, and the refrigerant discharged from the refrigerant discharge passage returns to the refrigerant supply passage again after temperature adjustment. The FR cooling plate 24 is provided with a plurality of convex portions 24a along the circumferential direction on the lower surface of the FR cooling plate 24. By fastening the bolt 84 to the threaded hole of the convex portion 24a from the back of the setting plate 82 while the convex portion 24a provided on the back of the FR cooling plate 24 is embedded in the through hole 16b of the wafer cooling plate flange portion 16a, the wafer mounting table 12 is fixed to the setting plate 82 via the FR mounting table 20.

[0052] On the inner peripheral side of the adhesive sheet 25 between the FR ceramic heater 22 and the FR cooling plate 24, an adhesive inner peripheral side protective material 27i is provided in a manner to surround the inner peripheral portion (inner peripheral surface) of the adhesive sheet 25. An inner peripheral side gap layer 28i as an anti-adhesion layer is provided between the adhesive sheet 25 and the inner peripheral side protective material 27i. On the outer peripheral side of the adhesive sheet 25 between the FR ceramic heater 22 and the FR cooling plate 24, an adhesive outer peripheral side protective material 27o is provided in a manner to surround the outer peripheral portion (outer peripheral surface) of the adhesive sheet 25. An outer peripheral side gap layer 28o as an anti-adhesion layer is provided between the adhesive sheet 25 and the outer peripheral side protective material 27o. The inner peripheral side protective material 27i and the outer peripheral side protective material 27o are formed of a material having a higher corrosion resistance than the adhesive sheet 25 in the environmental atmosphere (e.g., process gas, plasma, etc.) in which the wafer processing device 10 is used. Therefore, the inner and outer protective materials 27i and 27o protect the adhesive sheet 25 from the use environment. For example, when epoxy resin is used as the material of the adhesive sheet 25, silicone resin can be used as the material of the inner and outer protective materials 27i and 27o.

[0053] The FR cooling plate 24 has an inner circumferential insulating film 29i and an outer circumferential insulating film 29o. The inner circumferential insulating film 29i is provided on the inner circumferential surface of the FR cooling plate 24 and the portion of the surface of the FR cooling plate 24 facing the FR ceramic heater 22 where the inner circumferential protective material 27i is formed. In the present embodiment, the inner circumferential insulating film 29i enters the adhesive sheet 25. The outer circumferential insulating film 29o is provided on the outer circumferential surface of the FR cooling plate 24 and the portion of the surface of the FR cooling plate 24 facing the FR ceramic heater 22 where the outer circumferential protective material 27o is formed. In the present embodiment, the outer circumferential insulating film 29o enters the adhesive sheet 25. The insulating films 29i and 29o preferably have corrosion resistance in the use environment. As the insulating films 29i and 29o, for example, a sprayed film can be used. As the material of the sprayed film, insulating ceramics (such as aluminum oxide, yttrium oxide, etc.) can be cited.

[0054] The FR mounting table 20 can be manufactured, for example, by the following method. First, prepare a ceramic heater 22 for FR, a cooling plate 24 for FR, and a double-sided tape. The double-sided tape eventually becomes an adhesive sheet 25, and has release paper on both sides. Next, the release paper is peeled off from one side of the double-sided tape to expose the adhesive surface, and the adhesive surface of the double-sided tape is pasted on the surface of the cooling plate 24 for FR. Next, the release paper is peeled off from the other side of the double-sided tape to expose the adhesive surface, and the back side 22b of the ceramic heater 22 for FR is placed here to be bonded. As a result, the ceramic heater 22 for FR and the cooling plate 24 for FR become bonded by the adhesive sheet 25. Thereafter, an adhesive filling material is filled between the ceramic heater 22 for FR and the cooling plate 24 for FR and around the adhesive sheet 25 (inner and outer sides). The filling material eventually becomes the inner and outer protective materials 27i and 27o. At this time, a gap is generated between the filling material and the adhesive sheet 25. Then, the filling material is cured to form the inner and outer peripheral protection materials 27i and 27o. Thus, the FR mounting table 20 is obtained.

[0055] Next, use Figure 1 The following describes an example of using the wafer processing device 10. The chamber 80 includes a mounting plate 82 for mounting the wafer processing device 10 therein. The wafer processing device 10 is mounted on the mounting plate 82 as described above. A showerhead 90 is disposed on the ceiling surface of the chamber 80 to discharge a process gas from a plurality of gas injection holes into the chamber 80.

[0056] A disc-shaped wafer W is placed on the surface 14a of the wafer processing apparatus 10. The temperature of the wafer W can be controlled by adjusting the power supplied to the resistance heating element 14d of the wafer ceramic heater 14 and the temperature of the refrigerant supplied to the refrigerant passage (not shown) of the wafer cooling plate 16. The temperature control of the wafer W is performed by detecting the temperature of the wafer W using a temperature detection sensor (not shown) and feeding back the temperature so that the temperature becomes the target temperature.

[0057] A focus ring (FR) is placed on the surface 22a of the wafer processing device 10. The focus ring has a height difference along the inner circumference of the upper end portion so as not to interfere with the wafer W. The temperature of the focus ring can be controlled by adjusting the power supplied to the resistance heating element 22d of the FR ceramic heater 22 and the temperature of the refrigerant supplied to the refrigerant passage (not shown) of the FR cooling plate 24. The temperature control of the focus ring is performed by detecting the temperature of the focus ring using a temperature detection sensor (not shown) and feeding back the temperature so that the temperature becomes the target temperature.

[0058] In this state, the interior of the chamber 80 is set to a predetermined vacuum atmosphere (or reduced pressure atmosphere), and high frequency power is supplied between the wafer cooling plate 16 of the wafer stage 12 and the shower head 90 while supplying process gas to generate plasma. Then, CVD film formation or etching is performed on the wafer using this plasma. It should be noted that the space below the plate 82 is set to an air atmosphere.

[0059] As the wafer W is processed by plasma, the focus ring is also consumed. However, since the focus ring is relatively thick, the focus ring is replaced after a plurality of wafers W are processed.

[0060] Here, regarding the case where the CTE of the adhesive sheet 25 of the FR mounting table 20 is larger than the CTE of the inner and outer peripheral protection materials 27i and 27o, refer to Figure 4 The behavior of the adhesive sheet 25 and the inner and outer protective materials 27i and 27o will be described. When the FR mounting table 20 reaches a high temperature, the adhesive sheet 25 and the inner and outer protective materials 27i and 27o will move outward in the radial direction ( Figure 4 At this time, the elongation of the adhesive sheet 25 ( Figure 4 The black arrows) are greater than the elongation of the inner and outer protective materials 27i and 27o ( Figure 4 If the inner circumference side protection material 27i is bonded to the adhesive sheet 25, the inner circumference side protection material 27i is stretched by the adhesive sheet 25, so sometimes peeling or cracking occurs in at least one of the adhesive sheet 25 or the inner circumference side protection material 27i. However, in this embodiment, an inner circumference side gap layer 28i is provided as an anti-adhesion layer between the inner circumference side protection material 27i and the adhesive sheet 25. Therefore, the inner circumference side protection material 27i will not be stretched by the adhesive sheet 25, and peeling or cracking can be prevented from occurring in the adhesive sheet 25 and the inner circumference side protection material 27i.

[0061] In addition, regarding the case where the CTE of the adhesive sheet 25 of the FR mounting table 20 is smaller than the CTE of the inner and outer peripheral protection materials 27i and 27o, refer to Figure 5 The behavior of the adhesive sheet 25 and the inner and outer protective materials 27i and 27o will be described. When the FR mounting table 20 reaches a high temperature, the adhesive sheet 25 and the inner and outer protective materials 27i and 27o will move outward in the radial direction ( Figure 5 At this time, the elongation of the inner and outer protective materials 27i and 27o ( Figure 5 The white arrow) is greater than the elongation of the adhesive sheet 25 ( Figure 5The outer peripheral side protective material 27o is larger than the outer peripheral side protective material 27o. If the outer peripheral side protective material 27o is bonded to the adhesive sheet 25, the adhesive sheet 25 is stretched by the outer peripheral side protective material 27o, so sometimes peeling or cracking occurs in at least one of the adhesive sheet 25 or the outer peripheral side protective material 27o. However, in the present embodiment, an outer peripheral side gap layer 28o is provided as an anti-adhesion layer between the outer peripheral side protective material 27o and the adhesive sheet 25. Therefore, the adhesive sheet 25 will not be stretched by the outer peripheral side protective material 27o, and peeling or cracking can be prevented from occurring in the adhesive sheet 25 and the outer peripheral side protective material 27o.

[0062] Here, the correspondence between the components of the present embodiment and the components of the present invention is clarified. The FR mounting table 20 of the present embodiment is equivalent to the semiconductor manufacturing device member of the present invention, the FR ceramic heater 22 is equivalent to the ceramic heater, the FR cooling plate 24 is equivalent to the metal base, the adhesive sheet 25 is equivalent to the adhesive material, the inner and outer protective materials 27i and 27o are equivalent to the protective material, the inner and outer gap layers 28i and 28o are equivalent to the anti-adhesion layer, and the inner and outer insulating films 29i and 29o are equivalent to the insulating film.

[0063] In the FR mounting table 20 described above, the adhesive sheet 25 is protected by the inner and outer protective materials 27i and 27o, so the corrosion resistance of the adhesive sheet 25 in the use environment of the FR mounting table 20 is improved. In addition, no matter whether the CTE of the adhesive sheet 25 is larger or smaller than the CTE of the inner and outer protective materials 27i and 27o, the side with smaller CTE will not be stretched by the side with larger CTE, so it is possible to prevent the adhesive sheet 25 and the inner and outer protective materials 27i and 27o from peeling off or cracking. In this way, the adhesive sheet 25 can be protected by the inner and outer protective materials 27i and 27o, and the occurrence of adverse conditions (such as peeling off, cracking, etc.) caused by the thermal expansion difference between the adhesive sheet 25 and the inner and outer protective materials 27i and 27o can be prevented.

[0064] The inner circumferential side gap layer 28i plays a role of separating the adhesive sheet 25 from the inner circumferential side protective material 27i, and the outer circumferential side gap layer 28o plays a role of separating the adhesive sheet 25 from the outer circumferential side protective material 27o.

[0065] Furthermore, the FR cooling plate 24 has an inner insulating film 29i and an outer insulating film 29o on the side of the FR cooling plate 24 and the surface opposite to the FR ceramic heater 22, where the inner and outer protective materials 27o and 27i are formed, thereby preventing unexpected discharge from occurring via the FR cooling plate 24.

[0066] It should be noted that, needless to say, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various forms as long as they fall within the technical scope of the present invention.

[0067] For example, in the above embodiment, if Figure 6 As shown, inner and outer chamfered portions 22 i and 22 o may be provided on the inner and outer peripheries of the surface of the FR ceramic heater 22 facing the FR cooling plate 24 , respectively. Figure 6 , the same reference numerals are used for the same components as those in the above-mentioned embodiment. In this case, the inner peripheral side protection material 127i is provided in the space surrounded by the inner peripheral side chamfered portion 22i and the FR cooling plate 24, and the outer peripheral side protection material 127o is provided in the space surrounded by the outer peripheral side chamfered portion 22o and the FR cooling plate 24. Therefore, the usage amount (filling amount) of each protection material 127i, 127o can be controlled to be approximately constant. It should be noted that the chamfered portions 22i, 22o can be formed by C chamfering processing or by R chamfering processing.

[0068] In the above embodiment, if Figure 7 As shown in the figure, an inner circumferential protrusion 24i may be provided near the inner circumference (inner side) of the surface of the FR cooling plate 24 facing the FR ceramic heater 22, and an outer circumferential protrusion 24o may be provided near the outer circumferential edge (inner side). The inner and outer circumferential protrusions 24i and 24o may be provided in a concentric circle with the FR ceramic heater 22. Figure 7 , the same reference numerals are given to the same components as those in the above-mentioned embodiment. In this case, the inner circumferential side protection material 227i is provided in a space surrounded by the FR ceramic heater 22, the inner circumferential side protrusion 24i, and the FR cooling plate 24, and the outer circumferential side protection material 227o is provided in a space surrounded by the FR ceramic heater 22, the outer circumferential side protrusion 24o, and the FR cooling plate 24. Therefore, the usage amount (filling amount) of each protection material 227i, 227o can be controlled to be substantially constant.

[0069] In the above-mentioned embodiment, the inner and outer peripheral gap layers 28i and 28o are provided as the anti-adhesion layer. Figure 8 As shown, the inner and outer gap layers 28i and 28o may be filled with a non-adhesive material (e.g., ceramic powders such as alumina and yttrium oxide, silicone-based release agents, etc.) to form inner and outer non-adhesive layers 38i and 38o. Figure 8 In the embodiment, the same reference numerals are used for the same components as those in the above-mentioned embodiment. In this way, it is possible to prevent or inhibit one of the adhesive sheet 25 and the inner peripheral side protection material 27i from stretching the other, and it is possible to prevent or inhibit one of the adhesive sheet 25 and the outer peripheral side protection material 27o from stretching the other.

[0070] In the above embodiment, the inner peripheral side gap layer 28i is provided between the adhesive sheet 25 and the inner peripheral side protection material 27i, and the outer peripheral side gap layer 28o is provided between the adhesive sheet 25 and the outer peripheral side protection material 27o. Fig. 9 composition. Fig. 9 In the figure, the same reference numerals are given to the same components as those in the above-mentioned embodiment. The adhesive sheet 125 includes: a main portion 125m having a circular ring shape and a wide width; an inner peripheral side auxiliary portion 125i having a circular ring shape and a narrow width provided along the inner peripheral portion of the main portion 125m; and an outer peripheral side auxiliary portion 125o having a circular ring shape and a narrow width provided along the outer peripheral portion of the main portion 125m. The inner peripheral side auxiliary portion 125i is bonded to the inner peripheral side protective material 27i, but an inner peripheral side gap portion 48i serving as an anti-adhesion portion is provided between the inner peripheral side auxiliary portion 125i and the main portion 125m. The outer peripheral side auxiliary portion 125o is bonded to the outer peripheral side protective material 27o, but an outer peripheral side gap portion 48o serving as an anti-adhesion portion is provided between the outer peripheral side auxiliary portion 125o and the main portion 125m. Since the adhesive sheet 125 is protected by the inner and outer protective materials 27i and 27o, the corrosion resistance of the adhesive sheet 125 in the use environment of the FR mounting table 20 is improved. In addition, regardless of whether the CTE of the adhesive sheet 125 is larger or smaller than the CTE of the inner and outer protective materials 27i and 27o, the force of the smaller CTE being pulled by the larger CTE is a relatively small force acting between the narrow inner auxiliary portion 125i of the adhesive sheet 125 and the inner protective material 27i, and between the narrow outer auxiliary portion 125o and the outer protective material 27o. Therefore, it is possible to prevent the adhesive sheet 125 and the inner and outer protective materials 27i and 27o from peeling or cracking.

[0071] The inner and outer circumferential side gaps 48i and 48o can be as follows Fig. 9 The inner circumference gap 48i may be provided continuously along the circumference as shown in the figure, or may be provided intermittently. For example, a plurality of bridging portions that bridge the main portion 125m and the inner circumference side auxiliary portion 125i in the radial direction may be provided radially from the center of the annular main portion 125m, thereby discontinuously providing the inner circumference gap portion 48i along the circumference. The same is true for the outer circumference gap portion 48o. In addition, the inner circumference side and outer circumference side gap portions 48i and 48o may be filled with a material having no adhesive force (e.g., ceramic powder such as aluminum oxide and yttrium oxide) to form the inner circumference side and outer circumference side non-adhesive portions.

[0072] In the FR mounting table 20 of the above-mentioned embodiment, when the CTE of the adhesive sheet 25 is smaller than the CTE of the inner and outer protective materials 27i and 27o, only the outer circumferential gap layer 28o may be provided. That is, the inner circumferential gap layer 28i may not be provided, and the inner circumference of the adhesive sheet 25 may be bonded to the inner circumferential protective material 27i. At this time, if a high temperature is reached, the amount of the inner circumferential protective material 27i extending outward in the radial direction is greater than the amount of the adhesive sheet 25 extending, so the adhesive sheet 25 is compressed by the inner circumferential protective material 27i, but even if such a compressive stress is generated, it will not be a particular problem. In addition, when the CTE of the adhesive sheet 25 is larger than the CTE of the inner and outer protective materials 27i and 27o, only the inner circumferential gap layer 28i may be provided. That is, the outer circumferential gap layer 28o may not be provided, and the outer circumferential of the adhesive sheet 25 may be bonded to the outer circumferential protective material 27o. At this time, if the temperature reaches a high level, the adhesive sheet 25 radially expands outward by a greater amount than the outer peripheral protection material 27o, so the outer peripheral protection material 27o is compressed by the adhesive sheet 25. However, even if such compressive stress is generated, it will not be a particular problem.

[0073] In the above embodiment, the present invention is applied to the FR stage 20, but the present invention may also be applied to the wafer stage 12. Fig.10 The wafer stage 12 is thus constructed. Fig.10 In the embodiment, the same reference numerals are given to the same components as those in the above-mentioned embodiment. The disc-shaped ceramic heater 14 for the chip and the disc-shaped (cap-shaped) cooling plate 16 for the chip are bonded by a circular adhesive sheet 15. The annular and adhesive protective material 17 is arranged between the ceramic heater 14 and the chip cooling plate 16 in a manner that surrounds the periphery (outer periphery) of the adhesive sheet 15. A gap layer 18 as an anti-adhesion layer is arranged between the adhesive sheet 15 and the protective material 17 to prevent the adhesive sheet 15 from adhering to the protective material 17. Since the adhesive sheet 15 is protected by the protective material 17, the corrosion resistance of the adhesive sheet 15 in the use environment of the chip mounting table 12 is improved. In addition, regardless of whether the CTE of the adhesive sheet 15 is larger or smaller than the CTE of the protective material 17, the side with a smaller CTE will not be stretched by the side with a larger CTE, so that the adhesive sheet 15 and the protective material 17 can be prevented from peeling and cracking. According to Fig.10 The structure can protect the adhesive sheet 15 with the protective material 17, and can prevent the occurrence of adverse conditions caused by the thermal expansion difference between the adhesive sheet 15 and the protective material 17. It should be noted that in the wafer mounting table 12, when the CTE of the adhesive sheet 15 is smaller than the CTE of the protective material 17, the gap layer 18 can also be provided.

[0074] exist Fig.10 The wafer mounting table 12 may also be Figure 6Similarly, a chamfered portion is provided on the outer periphery of the surface of the wafer ceramic heater 14 facing the wafer cooling plate 16, and the protective material 17 is provided in the space surrounded by the chamfered portion and the wafer cooling plate 16. Figure 7 Similarly, a circumferential protrusion is provided near (inside) the outer peripheral edge of the surface of the wafer cooling plate 16 facing the wafer ceramic heater 14, and the protective material 17 is provided in a space surrounded by the wafer ceramic heater 14, the circumferential protrusion, and the wafer cooling plate 16. In this way, the amount of the protective material 17 used can be controlled to be substantially constant.

[0075] exist Fig.10 The wafer mounting table 12 is Figure 8 Similarly, a non-adhesive layer may be formed by filling the void layer 18 with a material having no adhesive force (for example, ceramic powder such as alumina and yttrium oxide).

[0076] exist Fig.10 The wafer mounting table 12 is Fig. 9 Similarly, the adhesive sheet 15 may include a circular main portion and a narrow secondary portion provided along the periphery of the main portion, the secondary portion being bonded to the protective material 17, but a gap portion serving as an anti-adhesion portion may be provided between the secondary portion and the main portion. In this case, since the adhesive sheet 15 is protected by the protective material 17, the corrosion resistance of the adhesive sheet 15 in the use environment of the wafer stage 12 is improved. In addition, regardless of whether the CTE of the adhesive sheet 15 is larger or smaller than the CTE of the protective material 17, the force of the side with smaller CTE being stretched by the side with larger CTE is a smaller force acting between the narrow secondary portion of the adhesive sheet 15 and the protective material 17. Therefore, it is possible to prevent the adhesive sheet 15 and the protective material 17 from peeling off or cracking.

[0077] In the above embodiment, an electrostatic electrode may be provided between the surface 14a of the wafer ceramic heater 14 and the resistance heating element 14d, and a DC voltage may be applied to the electrostatic electrode to cause the wafer W to be adsorbed to the surface 14a. Alternatively, an electrostatic electrode may be provided between the surface 22a of the FR ceramic heater 22 and the resistance heating element 22d, and a DC voltage may be applied to the electrostatic electrode to cause the focusing ring to be adsorbed to the surface 22a.

[0078] In the above embodiment, when the inner and outer protective materials 27i and 27o are deteriorated, they can be removed and then filled with adhesive filling materials to form new inner and outer protective materials 27i and 27o. When removing the deteriorated inner and outer protective materials 27i and 27o, since these protective materials 27i and 27o are not bonded to the adhesive sheet 25, they can be removed relatively easily. Figure 6 to Figure 8 The same is true in .

[0079] In the above-described embodiment, the wafer cooling plate 16 and the FR cooling plate 24 are provided as separate components. However, the wafer cooling plate 16 and the FR cooling plate 24 may be integrated into one component.

[0080] In the above embodiment, the adhesive sheet 25 is exemplified as the adhesive material. However, an adhesive material obtained by curing a fluid resin or the like may be used instead of the adhesive sheet 25 .

Claims

1. A component for a semiconductor manufacturing device, characterized in that: have: Ceramic heaters in the form of disks or rings; Metal base; An adhesive material for bonding the metal base and the ceramic heater; an adhesive protective material disposed between the ceramic heater and the metal base so as to surround the adhesive material; as well as an anti-adhesion layer, which is arranged between the adhesive material and the protective material to prevent the adhesive material from adhering to the protective material, A chamfered portion is provided at an edge of a surface of the ceramic heater that faces the metal base, and the protective material is provided in a space surrounded by the chamfered portion and the metal base.

2. The semiconductor manufacturing device member according to claim 1, wherein: The anti-adhesive layer is a void layer or a non-adhesive layer formed of a material having no adhesive force.

3. The semiconductor manufacturing device member according to claim 1 or 2, characterized in that: A circumferential protrusion is provided inside an edge of a surface of the metal base that faces the ceramic heater, and the protective material is provided in a space surrounded by the ceramic heater, the circumferential protrusion, and the metal base.

4. The semiconductor manufacturing device member according to claim 1 or 2, characterized in that: The metal base has an insulating film on at least a portion where the protective material is formed among a side surface of the metal base and a surface facing the ceramic heater.

5. The semiconductor manufacturing device member according to claim 1 or 2, characterized in that: The ceramic heater is a ring-shaped member that carries the focusing ring. The bonding material is in a ring shape. The protective materials are respectively provided on the inner peripheral side and the outer peripheral side of the adhesive material.

6. The semiconductor manufacturing device member according to claim 1 or 2, characterized in that: The ceramic heater is a disc-shaped member on which a wafer is placed. The bonding material is circular. The protective material is provided on the outer peripheral side of the adhesive material.

7. A component for semiconductor manufacturing equipment, characterized in that: have: Ceramic heaters in the form of disks or rings; Metal base; an adhesive material for bonding the metal base and the ceramic heater; and an adhesive protective material disposed between the ceramic heater and the metal base so as to surround the adhesive material; The adhesive material includes: a main portion; a narrow secondary portion provided along the periphery of the main portion and bonded to the protective material; and an anti-adhesion portion provided between the main portion and the secondary portion.

8. The semiconductor manufacturing device member according to claim 7, wherein: The anti-adhesion portion is disposed intermittently or continuously along the circumference.

9. The semiconductor manufacturing device member according to claim 7 or 8, characterized in that: The anti-adhesion portion is a void portion or a non-adhesion portion formed of a material having no adhesive force.

10. The semiconductor manufacturing device member according to claim 7 or 8, characterized in that: The metal base has an insulating film on at least a portion where the protective material is formed among a side surface of the metal base and a surface facing the ceramic heater.

11. The semiconductor manufacturing device member according to claim 7 or 8, characterized in that: The ceramic heater is a ring-shaped member that carries the focusing ring. The bonding material is in a ring shape. The protective materials are respectively provided on the inner peripheral side and the outer peripheral side of the adhesive material.

12. The semiconductor manufacturing device member according to claim 7 or 8, characterized in that: The ceramic heater is a disc-shaped member on which a wafer is placed. The bonding material is circular. The protective material is provided on the outer peripheral side of the adhesive material.

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