electronic devices

Abstract

The present invention relates to an electronic device. According to one embodiment, the electronic device comprises: an insulating substrate including a stretchable strip-shaped portion and an island-shaped portion connected to the strip-shaped portion; an organic insulating film disposed on the insulating substrate; an inorganic insulating film disposed on the organic insulating film; wiring disposed between the strip-shaped portion and the organic insulating film; an electrical element disposed on the inorganic insulating film at the island-shaped portion and electrically connected to the wiring; a partition wall overlapping the island-shaped portion and the strip-shaped portion and surrounding the electrical element; and a sealing film covering the electrical element.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2021-091328, filed on May 31, 2021, and incorporates all the contents described in that Japanese application by reference. Technical Field

[0002] Embodiments of the present invention relate to electronic equipment. Background Art

[0003] In recent years, research has been underway to utilize flexible and stretchable substrates in various fields. For example, a flexible substrate with electrical components arranged in a matrix can be attached to curved surfaces such as electronic device housings and the human body. Examples of electrical components include various sensors such as touch sensors and temperature sensors, as well as display elements.

[0004] In a flexible substrate, it is necessary to take measures to prevent the wiring from being damaged by stress generated by bending and expansion. As such a measure, for example, it has been proposed to give the wiring a curved shape (a meandering shape).

[0005] On the other hand, a technique for dividing an organic layer and a cathode (second electrode) using a pixel division structure is known. Summary of the Invention

[0006] An object of the embodiment is to provide an electronic device capable of suppressing a decrease in reliability.

[0007] According to one embodiment, an electronic device comprises: an insulating substrate including a stretchable strip-shaped portion and an island-shaped portion connected to the strip-shaped portion; an organic insulating film arranged on the insulating substrate; an inorganic insulating film arranged on the organic insulating film; wiring arranged between the strip-shaped portion and the organic insulating film; an electrical element arranged on the inorganic insulating film at the island-shaped portion and electrically connected to the wiring; a partition wall overlapping with the island-shaped portion and the strip-shaped portion and surrounding the electrical element; and a sealing film covering the electrical element.

[0008] According to one embodiment, an electronic device comprises: an insulating substrate formed of a resin material; an organic insulating film arranged on the above-mentioned insulating substrate; an inorganic insulating film arranged on the above-mentioned organic insulating film; wiring arranged between the above-mentioned insulating substrate and the above-mentioned organic insulating film; an electrical element arranged on the above-mentioned inorganic insulating film and electrically connected to the above-mentioned wiring; a partition wall arranged on the above-mentioned inorganic insulating film and surrounding the above-mentioned electrical element; and a sealing film covering the above-mentioned electrical element, the above-mentioned partition wall comprising: a first layer formed of a metal material and in contact with the above-mentioned inorganic insulating film; and a second layer formed of an inorganic insulating material which is the same material as the above-mentioned sealing film and is stacked on the above-mentioned first layer, the above-mentioned second layer extending toward the above-mentioned electrical element and in contact with the above-mentioned sealing film.

[0009] According to the embodiment, it is possible to provide an electronic device capable of suppressing a decrease in reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a schematic plan view of the electronic device 1 according to the embodiment.

[0011] Figure 2 It is a plan view showing an example of the flexible substrate 2 .

[0012] Figure 3 It is a top view obtained by enlarging one island-shaped portion I.

[0013] Figure 4 To follow Figure 3 The cross-sectional view of the flexible substrate 2 including the island portion 1 is taken along line AA'.

[0014] Figure 5 To follow Figure 3 The cross-sectional view of the flexible substrate 2 including the island portion 1 is taken along line BB'.

[0015] Figure 6 To follow Figure 3 The cross-sectional view of the flexible substrate 2 including the island portion 1 is taken along the CC' line.

[0016] Figure 7 This is a cross-sectional view showing an enlarged configuration example of the partition wall 30 .

[0017] Figure 8 It is a diagram for explaining a method for manufacturing the flexible substrate 2 .

[0018] Figure 9 It is a diagram for explaining a method for manufacturing the flexible substrate 2 .

[0019] Figure 10 This is a cross-sectional view showing another configuration example of the partition wall 30 in an enlarged manner.

[0020] Figure 11 This is a diagram for explaining another method of manufacturing the flexible substrate 2 .

[0021] Figure 12 This is a diagram for explaining another method of manufacturing the flexible substrate 2 . DETAILED DESCRIPTION

[0022] Hereinafter, the present embodiment will be described with reference to the accompanying drawings. It should be noted that the following disclosure is only an example, and appropriate changes that can be easily thought of by those skilled in the art while ensuring the main purpose of the invention are of course also included in the scope of the present invention. In addition, in order to make the description clearer, the width, thickness, shape, etc. of each part in the accompanying drawings are sometimes schematically represented compared to the actual way, but this is only an example and is not a limitative interpretation of the present invention. In addition, in this specification and each figure, sometimes the same reference numerals are marked for constituent elements that perform the same or similar functions as the elements stated in the previous text with respect to the figures that have appeared, and repeated detailed descriptions are appropriately omitted.

[0023] Figure 1 This is a schematic top view of the electronic device 1 according to this embodiment. In this embodiment, the first direction X, the second direction Y, and the third direction Z are defined as shown. The first direction X, the second direction Y, and the third direction Z are orthogonal to each other, but may intersect at angles other than 90 degrees. The first direction X and the second direction Y correspond to directions parallel to the main surface of the electronic device 1, for example. The third direction Z corresponds to the thickness direction of the electronic device 1. In this embodiment, viewing the XY plane defined by the first direction X and the second direction Y is referred to as a top view.

[0024] Electronic device 1 includes flexible substrate 2, circuit substrate 3, and controller 4. Circuit substrate 3 is, for example, a flexible printed circuit board and is electrically connected to terminals in terminal area TA of flexible substrate 2. Controller 4 is mounted on circuit substrate 3, but may also be mounted directly on flexible substrate 2.

[0025] The flexible substrate 2 is configured to have overall flexibility and stretchability at least in the active area AA. The flexible substrate 2 includes a first driver DR1, a second driver DR2, X wirings WX, Y wirings WY, an electrical device SD, and the like.

[0026] The first driver DR1 and the second driver DR2 are arranged on, for example, the flexible substrate 2 , but may be arranged on the circuit substrate 3 , the controller 4 , or other substrates. Figure 1In the example shown, the first and second drivers DR1 and DR2 are arranged outside the active area AA. The area where the first and second drivers DR1 and DR2 are arranged may be flexible and stretchable like the active area AA, or may be a rigid area.

[0027] X wiring WX is a general term for wiring extending generally along the first direction X. At least a portion of the X wiring WX is electrically connected to the first driver DR1. Multiple X wirings WX are arranged along the second direction Y. Y wiring WY is a general term for wiring extending generally along the second direction Y. At least a portion of the Y wiring WY is electrically connected to the second driver DR2. Multiple Y wirings WY are arranged along the first direction X. These X wirings WX and Y wirings WY include a variety of wiring types, such as scan lines, signal lines, power lines, and various control lines.

[0028] In the active area AA, a plurality of electric devices SD are arranged in a matrix along the first direction X and the second direction Y, and are electrically connected to the X wiring WX and the Y wiring WY.

[0029] The electrical component SD is, for example, a sensor, a semiconductor element, or an actuator. For example, a sensor may be an optical sensor that receives visible light or near-infrared light, a temperature sensor, a pressure sensor, or a touch sensor. For example, a semiconductor element may be a light-emitting element, a light-receiving element, a diode, or a transistor. It should be noted that the electrical component SD is not limited to the elements exemplified here; elements with various functions may also be used. Furthermore, the electrical component SD may be a capacitor, a resistor, or the like.

[0030] When the electrical element SD is a light-emitting element, a flexible display with flexibility and stretchability can be realized. The light-emitting element can be, for example, a micro-LED (light-emitting diode) with a longest side length of 100 μm or less, a mini-LED with a longest side length greater than 100 μm and less than 300 μm, or an LED with a longest side length of 300 μm or more. The light-emitting element can also be an element other than an LED.

[0031] In one example, the electric device SD is an organic photodiode having an organic photoelectric conversion layer as a type of sensor, or an organic light-emitting diode (organic electroluminescent device) having an organic light-emitting layer as a type of light-emitting device.

[0032] The flexible substrate 2 includes an insulating base material 10 described later. In one example, the first driver DR1 , the second driver DR2 , the X wiring WX, the Y wiring WY, and the electric device SD are all arranged on the insulating base material 10 .

[0033] Figure 2 It is a plan view showing an example of the flexible substrate 2 .

[0034] The insulating substrate 10 is stretchable. The term "stretchable" here refers to the property of being able to stretch, that is, being able to stretch from a normal, non-stretched state and recovering when released from the stretched state. The non-stretched state refers to the state when no tensile stress is applied.

[0035] The insulating substrate 10 is formed, for example, in a mesh shape. Specifically, the insulating substrate 10 includes: a plurality of strip-shaped portions BX formed approximately along a first direction X; a plurality of strip-shaped portions BY formed approximately along a second direction Y; and a plurality of island-shaped portions I. The plurality of strip-shaped portions BX are arranged along the second direction Y, and the plurality of strip-shaped portions BY are arranged along the first direction X. Each of the strip-shaped portions BX and BY is stretchable. In one example, each of the strip-shaped portions BX and BY bends. It should be noted that another form of the stretchable strip-shaped portions BX and BY can be a linear strip-shaped portion made of a stretchable material such as silver nanowires or carbon nanotubes. Furthermore, the strip-shaped portions BX and BY are not limited to bending within the XY plane and can also be bent in the XZ plane or the YZ plane.

[0036] The island portion I corresponds to the intersection of the strip-shaped portion BX and the strip-shaped portion BY.

[0037] Multiple islands I are arranged in a matrix along a first direction X and a second direction Y. Adjacent islands I in the first direction X are connected by a strip BX, and adjacent islands I in the second direction Y are connected by a strip BY. Multiple strips BX and multiple strips BY are connected to one island I. The island I can be a quadrilateral such as a square, rectangle, or rhombus, or other polygonal shape, or other shapes such as a circle or an ellipse. The strips BX and BY can be connected to the corners of the island I or to the sides of the island I.

[0038] In other words, the insulating substrate 10 has a plurality of first openings (through holes) OP1. The plurality of first openings OP1 are arranged in a matrix along the first direction X and the second direction Y. In a plan view, a single first opening OP1 is surrounded by the outer edge 10E of the insulating substrate 10. Alternatively, a single first opening OP1 is surrounded by two adjacent strip-shaped portions BX in the second direction Y and two adjacent strip-shaped portions BY in the first direction X.

[0039] The strip-shaped portion BY is located between two first openings OP1 adjacent to each other in the first direction X. The strip-shaped portion BX is located between two first openings OP1 adjacent to each other in the second direction Y. The shapes of the first openings OP1 are substantially the same.

[0040] The strips BX and BY have one or more curved portions C. Such a shape is sometimes called a meander pattern. However, the shape of the strips BX and BY is not limited to Figure 2 The shapes of the strip portions BX and BY may be the same as or different from each other.

[0041] Such an insulating base material 10 can be formed of, for example, polyimide. It should be noted that the material of the insulating base material 10 is not limited to polyimide, and other resin materials can also be used.

[0042] The X wiring WX is arranged on the strip-shaped portion BX and runs in a curved manner similar to the strip-shaped portion BX. The Y wiring WY is arranged on the strip-shaped portion BY and runs in a curved manner similar to the strip-shaped portion BY.

[0043] The electric device SD is arranged on the island portion I and is electrically connected to the X wiring WX and the Y wiring WY. For example, one electric device SD is arranged on one island portion I, but a plurality of electric devices SD may be arranged.

[0044] Figure 3 It is an enlarged top view of one island-shaped portion I.

[0045] Two strip-shaped portions BX and two strip-shaped portions BY are connected to the island portion I. That is, the island portion I is located between the strip-shaped portions BX in the first direction X and between the strip-shaped portions BY in the second direction Y.

[0046] In a plan view, the partition wall 30 overlaps the island portion I and surrounds the electrical device SD located in the island portion I. Furthermore, the partition wall 30 overlaps each of the strip portions BX and BY, and overlaps the X wiring WX and the Y wiring WY. In the illustrated example, the partition wall 30 is formed to surround a cross-shaped region including the region where the electrical device SD is located.

[0047] Figure 4 To follow Figure 3 The cross-sectional view of the flexible substrate 2 including the island portion 1 is taken along line AA'. Figure 5 To follow Figure 3 BB' line cross-sectional view of the flexible substrate 2 including the island portion 1. Figure 6 To follow Figure 3 The cross-sectional view of the flexible substrate 2 including the island portion 1 is taken along the CC' line.

[0048] Flexible substrate 2 includes insulating base material 10 , inorganic insulating film 11 , wiring layer 21 , inorganic insulating film 12 , wiring layer 22 , inorganic insulating film 13 , organic insulating film 14 , inorganic insulating film 15 , electric element SD, sealing film 16 , and partition wall 30 .

[0049] The entire flexible substrate 2 may be covered with a stretchable protective film. Although the protective film is not shown, the back surface of the insulating base material 10 and the surface of the sealing film 16 may be covered with the protective film.

[0050] The inorganic insulating film 11 is disposed on the insulating substrate 10 and extends over the island portion I, the strip portion BX, and the strip portion BY. The wiring layer 21 is disposed on the inorganic insulating film 11. The inorganic insulating film 12 is disposed on the wiring layer 21 and the inorganic insulating film 11. The wiring layer 22 is disposed on the inorganic insulating film 12. The inorganic insulating film 13 is disposed on the wiring layer 22 and the inorganic insulating film 12. The organic insulating film 14 is disposed on the inorganic insulating film 13. The inorganic insulating film 15 is disposed on the organic insulating film 14. Similar to the inorganic insulating film 11, the inorganic insulating film 12, the inorganic insulating film 13, the organic insulating film 14, and the inorganic insulating film 15 extend over the island portion I, the strip portion BX, and the strip portion BY.

[0051] Each of the inorganic insulating films 11 and 12 is formed as a multilayer structure comprising a plurality of stacked insulating layers. In one example, each of the inorganic insulating films 11 and 12 includes an insulating layer formed of silicon nitride and an insulating layer formed of silicon oxide. It should be noted that each of the inorganic insulating films 11 and 12 can be formed as a single layer or as a multilayer structure.

[0052] The inorganic insulating film 13 is, for example, an insulating layer formed as a single layer and made of silicon oxide. Note that the inorganic insulating film 13 may also be an insulating layer formed of silicon nitride as another single layer, or may be formed as a multilayer structure of a plurality of insulating layers.

[0053] The inorganic insulating film 15 is, for example, a single-layer insulating layer made of silicon nitride, aluminum oxide, or the like. Such an inorganic insulating film 15 suppresses the penetration of moisture into the organic insulating film 14 or the diffusion of moisture contained in the organic insulating film 14 into the electrical device SD. The inorganic insulating film 15 may also be formed as a multilayer structure comprising multiple insulating layers.

[0054] Wiring layer 21 and Figure 2 The wiring layer 22 is electrically connected to either the X wiring WX or the Y wiring WY shown in FIG. The wiring layer 22 is electrically connected to the other of the X wiring WX and the Y wiring WY. In one example, the wiring layer 21 located in the strip-shaped portion BX is the X wiring WX, the wiring layer 21 located in the island portion I is the wiring or electrode electrically connected to the X wiring WX, the wiring layer 22 located in the strip-shaped portion BY is the Y wiring WY, and the wiring layer 22 located in the island portion I is the wiring or electrode electrically connected to the Y wiring WY. Specifically, the X wiring WX is arranged between the strip-shaped portion BX and the organic insulating film 14, and the Y wiring WY is arranged between the strip-shaped portion BY and the organic insulating film 14.

[0055] The wiring layers 21 and 22 are formed of a metal material such as molybdenum, tungsten, titanium, or aluminum.

[0056] The partition wall 30 includes a first layer 31 in contact with the inorganic insulating film 15 and a second layer 32 stacked on the first layer 31. The first layer 31 is formed of a material different from that of the second layer 32. In one example, the first layer 31 is formed of a metal material, but it can also be formed of an insulating material. The second layer 32 is formed of an insulating material, but it can also be formed of a metal material. Details of the partition wall 30 will be described later.

[0057] In the island portion I, the electrical device SD is disposed on the inorganic insulating film 15. The electrical device SD includes a lower electrode E1, an upper electrode E2, and an organic layer OL. For example, when the electrical device SD is an organic photodiode including an organic photoelectric conversion layer as the organic layer OL, either the lower electrode E1 or the upper electrode E2 functions as the anode of the electrical device SD, and the other one of the lower electrode E1 and the upper electrode E2 functions as the cathode of the electrical device SD.

[0058] The lower electrode E1 is disposed on the inorganic insulating film 15 and is in contact with the inorganic insulating film 15. The lower electrode E1 is patterned for each electrical element SD (or each island I). The lower electrode E1 is spaced apart from the partition wall 30.

[0059] Such a lower electrode E1 is formed of a transparent conductive material such as indium tin oxide or indium zinc oxide, or a metal material such as silver, titanium, or aluminum. It should be noted that the lower electrode E1 can be formed as a single layer of a transparent conductive material, a single layer of a metal material, or a multilayer structure. In the illustrated example, the lower electrode E1 is formed as a multilayer structure comprising a metal layer E11 formed of a metal material and a transparent conductive layer E12 formed of a transparent conductive material, with the transparent conductive layer E12 covering the metal layer E11.

[0060] The organic layer OL is disposed on and in contact with the lower electrode E1. Furthermore, the organic layer OL extends outward from the lower electrode E1 and is disposed on and in contact with the inorganic insulating film 15 between the partition wall 30 and the lower electrode E1. In addition to the active layer, the organic layer OL may also include a hole transport layer, an electron transport layer, and the like.

[0061] The upper electrode E2 is disposed on the organic layer OL and in contact with the organic layer OL. Furthermore, the upper electrode E2 is in contact with the first layer 31 of the partition wall 30. The upper electrode E2 is formed of a transparent conductive material, such as indium tin oxide or indium zinc oxide. If the first layer 31 is a conductive layer formed of a metal material, the upper electrode E2 is in contact with the first layer 31, thereby electrically connecting the upper electrode E2 to the partition wall 30.

[0062] The organic layer OL and the upper electrode E2 are not only present in the electrical device SD but also extend outside the region surrounded by the partition wall 30. That is, in the electrical device SD, the lower electrode E1 is arranged on the island portion I and surrounded by the partition wall 30, but the organic layer OL and the upper electrode E2 are not only arranged on the island portion I but also extend outside the partition wall 30 to the strip portion BX and the strip portion BY.

[0063] Furthermore, the upper electrode E2 is also in contact with the first layer 31 outside the partition wall 30. Thus, when the first layer 31 is a conductive layer, the upper electrode E2 shown in the figure is electrically connected to the upper electrodes E2 of other electrical devices SD located in the adjacent island portion 1. In other words, the upper electrode E2 is a common electrode disposed across the plurality of electrical devices SD.

[0064] The sealing film 16 covers the electric device SD. The sealing film 16 also covers the partition wall 30. In the example shown in the figure, the sealing film 16 is in contact with both the first layer 31 and the second layer 32 of the partition wall 30.

[0065] The sealing film 16 is an inorganic insulating film, and is an insulating layer formed of an inorganic insulating material such as silicon nitride or aluminum oxide. In one example, the sealing film 16 is formed of the same material as the second layer 32. This improves the adhesion between the second layer 32 and the sealing film 16, achieving high sealing performance.

[0066] Figure 7 This is an enlarged cross-sectional view showing one structural example of the partition wall 30. Note that the insulating base material 10 to the inorganic insulating film 13 are omitted from the illustration.

[0067] As described above, the partition wall 30 includes a first layer 31 and a second layer 32. The first layer 31 includes a first side surface S1 facing the electrical device SD; a second side surface S2 opposite the first side surface S1; and a first upper surface U1 between the first and second side surfaces S1 and S2. The first side surface S1 corresponds to the inner surface of the partition wall 30 surrounding the electrical device SD, while the second side surface S2 corresponds to the outer surface of the partition wall 30.

[0068] The second layer 32 has a bottom surface B2 in contact with the first upper surface U1; a third side surface S3 facing the electrical device SD; a fourth side surface S4 opposite the third side surface S3; and a second upper surface U2 between the third and fourth side surfaces S3 and S4. The bottom surface B2 extends from the first side surface S1 toward the electrical device SD and extends outward (opposite to the electrical device SD) from the second side surface S2. In other words, the second layer 32 extends from the first side surface S1 toward the electrical device SD and further extends from the second side surface S2 toward the side opposite to the electrical device SD.

[0069] The organic layer OL and the second electrode E2 are stacked on the second layer 32 , and are spaced apart from the organic layer OL and the second electrode E2 constituting the electric element SD.

[0070] Figure 7 In the example shown, in the second layer 32, the third side surface S3, the fourth side surface S4, and the second upper surface U2 are in contact with the organic layer OL, and the bottom surface B2 between the first side surface S1 and the third side surface S3, and the bottom surface B2 between the second side surface S2 and the fourth side surface S4 are exposed from the organic layer OL and the second electrode E2.

[0071] The partition wall 30 is separated from the organic layer OL and upper electrode E2 that constitute the electrical device SD and from the organic layer OL and upper electrode E2 located outside the electrical device SD. However, the upper electrode E2 is in contact with the first side surface S1 and the second side surface S2 of the first layer 31, which is the conductive layer. Thus, although the upper electrode E2 is separated by the inner region and the outer region surrounded by the partition wall 30, they are electrically connected to each other via the partition wall 30 (or the first layer 31).

[0072] The sealing film 16 contacts the first side surface S1 and the second side surface S2 of the first layer 31. The sealing film 16 contacts the bottom surface B2 of the second layer 32 between the first side surface S1 and the third side surface S3 and between the second side surface S2 and the fourth side surface S4.

[0073] As described above, the organic layer OL and the upper electrode E2 of the electrical device SD arranged in the island portion I are separated from the organic layer OL and the upper electrode E2 arranged in the strip portion BX and the strip portion BY, respectively, by the partition wall 30. Therefore, even if cracks occur in the sealing film 16 or the upper electrode E2, which are inorganic films, due to deformation of the elastic strip portions BX and BY, the propagation of the cracks to the island portion I can be suppressed. Therefore, the generation of cracks in the sealing film 16 covering the electrical device SD, the peeling of the sealing film 16 from the upper electrode E2, and the peeling of the upper electrode E2 from the organic layer OL can be suppressed.

[0074] Furthermore, since the moisture infiltration path toward the electric device SD is blocked by the partition wall 30 , even if moisture infiltrates through cracks generated in the strip portions BX and BY, deterioration of the electric device SD due to moisture can be suppressed.

[0075] Therefore, it is possible to suppress the degradation of the electric device SD due to external air or moisture, and thus suppress a decrease in reliability.

[0076] Next, refer to Figure 8 and Figure 9 A method for manufacturing the flexible substrate 2 will be described. Note that, in each drawing, illustration of the insulating base material 10 to the inorganic insulating film 13 is omitted.

[0077] First, after forming the inorganic insulating film 11 on the insulating base material 10 made of polyimide, for example, the wiring layer 21 , the inorganic insulating film 12 , the wiring layer 22 , the inorganic insulating film 13 , the organic insulating film 14 , and the inorganic insulating film 15 are sequentially formed.

[0078] Next, in Figure 8 In FIG. 1 , as shown in the upper stage, after forming the metal layer M on the inorganic insulating film 15 , an insulating layer of, for example, aluminum oxide is formed, and the insulating layer is patterned into a predetermined shape, thereby forming the second layer 32 .

[0079] Then, as shown in the middle section, the metal layer M is etched using the second layer 32 as a mask to form the first layer 31. It should be noted that during etching, a resist may be provided to protect the second layer 32. In this case, etching is performed under the condition that the width W1 of the first layer 31 is smaller than the width W2 of the second layer 32.

[0080] Then, as shown in the lower section, a metal layer E11 is formed as a lower electrode E1 on the inorganic insulating film 15, and then a transparent conductive layer E12 is formed to cover the metal layer E11. The inorganic insulating film 15 is exposed between the lower electrode E1 and the first layer 31.

[0081] Next, Figure 9 In the embodiment shown in the upper section, the organic layer OL is formed by, for example, vacuum evaporation. At this time, vapor from the evaporation source passes through the region where the partition wall 30 is not present and reaches the lower electrode E1 and the inorganic insulating film 15. The vapor from the evaporation source does not reach the region shadowed by the second layer 32 of the partition wall 30 (the first side surface S1 and the second side surface S2 of the first layer 31).

[0082] Then, as shown in the middle section, the upper electrode E2 is formed by sputtering, for example. Here, vapor from the evaporation source passes through the region where the partition walls 30 are not present, reaches the organic layer OL, and also reaches the first side surface S1 and the second side surface S2 of the first layer 31 .

[0083] Then, as shown in the lower section, a sealing film 16 made of, for example, aluminum oxide is formed by vapor deposition. The sealing film 16 is formed so as to cover the electric element SD and the partition wall 30. In this way, the flexible substrate 2 is manufactured.

[0084] As described above, the organic layer OL and the upper electrode E2 of the electrical device SD are formed without using a fine mask. Therefore, compared to the case of using a fine mask, manufacturing costs can be reduced, and steps such as alignment of the fine mask are unnecessary, making it possible to easily form the organic layer OL and the upper electrode E2 in the desired shape.

[0085] Next, another configuration example of the partition wall 30 will be described.

[0086] Figure 10 This is an enlarged cross-sectional view showing another configuration example of the partition wall 30. Note that illustration of the insulating base material 10 to the inorganic insulating film 13 is omitted.

[0087] The first layer 31 has a first side surface S1 facing the electric device SD, a second side surface S2 opposite to the first side surface S1 , and a first upper surface U1 between the first side surface S1 and the second side surface S2 .

[0088] The second layer 32 has a bottom surface B2 in contact with the first upper surface U1; a third side surface S3 facing the electrical device SD; a fourth side surface S4 opposite the third side surface S3; and a second upper surface U2 between the third and fourth side surfaces S3, S4. The third and fourth side surfaces S3, S4 overlap with the first upper surface U1. That is, the second layer 32 does not extend from the first side surface S1 toward the electrical device SD, nor does it extend from the second side surface S2 toward the side opposite the electrical device SD. Figure 10 In the example shown, the third side surface S3 overlaps the first side surface S1, and the fourth side surface S4 overlaps the second side surface S2. In the partition wall 30, the first and third side surfaces S1 and S3 correspond to inner surfaces surrounding the electrical component SD, and the second and fourth side surfaces S2 and S4 correspond to outer surfaces.

[0089] The electrical device SD includes a lower electrode E1, an organic layer OL, and an upper electrode E2. The lower electrode E1 and the organic layer OL are separated from the partition wall 30. The upper electrode E2 is in contact with the inorganic insulating film 15 between the partition wall 30 and the organic layer OL. The upper electrode E2 is in contact with the first side surface S1 and the third side surface S3, and a portion of the upper electrode E2 is disposed on the second upper surface U2.

[0090] The organic layer OL is not disposed outside the partition wall 30. That is, the upper electrode E2 is in contact with the inorganic insulating film 15 outside the partition wall without interposing the organic layer OL. In addition, the upper electrode E2 is in contact with the second side surface S2 and the fourth side surface S4. The upper electrode E2 has a slit SL in the second upper surface U2. The slit SL is formed, for example, to be aligned with the second side surface S2 and the fourth side surface S4 in a plan view. Figure 3 The partition wall 30 shown has the same shape and surrounds the electrical component SD.

[0091] The sealing film 16 covers the upper electrode E2 and is in contact with the second upper surface U2 of the second layer 32 in the slit SL.

[0092] Next, refer to Figure 11 and Figure 12 A method for manufacturing the flexible substrate 2 will be described. Note that, in each drawing, illustration of the insulating base material 10 to the inorganic insulating film 13 is omitted.

[0093] First, after forming the inorganic insulating film 11 on the insulating base material 10 made of polyimide, for example, the wiring layer 21 , the inorganic insulating film 12 , the wiring layer 22 , the inorganic insulating film 13 , the organic insulating film 14 , and the inorganic insulating film 15 are formed in this order.

[0094] Next, in Figure 11 As shown in the upper section, a partition wall 30 is formed by stacking a first layer 31 and a second layer 32 on an inorganic insulating film 15. The first layer 31 is formed by patterning a metal layer, and the second layer 32 is formed by patterning an insulating layer. The patterning of these metal layers and insulating layers can be performed together or separately.

[0095] Then, as shown in the middle stage, a metal layer E11 is formed as a lower electrode E1 on the inorganic insulating film 15 , and then a transparent conductive layer E12 is formed to cover the metal layer E11 . The inorganic insulating film 15 is exposed between the lower electrode E1 and the barrier rib 30 .

[0096] Next, as shown in the next section, the organic layer OL is formed using, for example, vacuum deposition. A mask with openings is used so that vapor from the deposition source reaches the desired area. This ensures that the vapor used to form the organic layer OL reaches the area above the lower electrode E1 but does not reach the partition wall 30 or the area outside the partition wall 30.

[0097] Next, in Figure 12 As shown in the upper section, the upper electrode E2 is formed by, for example, sputtering. At this time, vapor from the evaporation source reaches substantially the entire surface of the organic layer OL, the inorganic insulating film 15, and the partition wall 30. Then, a portion of the upper electrode E2 covering the second upper surface U2 is removed to form the slit SL.

[0098] Then, as shown in the lower section, the sealing film 16 is formed by vapor deposition to cover the upper electrode E2 and to be in contact with the second layer 32 in the slit SL, thereby manufacturing the flexible substrate 2 .

[0099] In this other configuration example, the upper electrode E2 of the electrical element SD disposed on the island portion 1 is also separated from the upper electrodes E2 disposed on the strip portion BX and the strip portion BY by the partition wall 30. Therefore, even if cracks are generated in the sealing film 16 or the upper electrode E2, which are inorganic films, due to deformation of the elastic strip portions BX and BY, the cracks are prevented from propagating to the island portion 1. Thus, the same effects as described above can be achieved.

[0100] As described above, according to this embodiment, it is possible to provide an electronic device capable of suppressing a decrease in reliability.

[0101] It should be noted that while several embodiments of the present invention have been described, these embodiments are disclosed merely as examples and are not intended to limit the scope of the invention. These novel embodiments may be implemented in various other ways and may be omitted, replaced, or modified without departing from the spirit of the invention. These embodiments and their variations are intended to be included within the scope and spirit of the invention, and are encompassed by the invention recited in the claims and their equivalents.

Claims

1. Electronic equipment having: An insulating substrate comprising a stretchable strip-shaped portion and an island-shaped portion connected to the strip-shaped portion; an organic insulating film disposed on the insulating substrate; an inorganic insulating film disposed on the organic insulating film; a wiring arranged between the strip-shaped portion and the organic insulating film; an electrical element disposed on the inorganic insulating film at the island portion and electrically connected to the wiring; a partition wall overlapping the island portion and the strip portion and surrounding the electrical element over its entire circumference; and a sealing film covering the electrical component, The partition wall comprises: a first layer formed of a metal material and in contact with the inorganic insulating film; and a second layer formed of the same inorganic insulating material as the sealing film and laminated on the first layer; The second layer is in contact with the sealing film.

2. The electronic device according to claim 1, wherein The first layer has: a first side surface facing the electrical element; a second side surface opposite to the first side surface; and a first upper surface. The second layer has a bottom surface in contact with the first upper surface, The bottom surface extends from the first side surface toward the electric component and extends outward from the second side surface.

3. The electronic device according to claim 2, wherein: The sealing film is in contact with the first side surface, the second side surface, and the bottom surface.

4. The electronic device according to claim 1, wherein The electrical component comprises: a lower electrode disposed on the inorganic insulating film; an organic layer disposed on the lower electrode; and an upper electrode disposed on the organic layer, The lower electrode, the organic layer, and the upper electrode are formed in an island shape in an inner region surrounded by the partition wall. The lower electrode is spaced apart from the partition wall. The upper electrode is in contact with the first layer.

5. The electronic device according to claim 1, wherein The first layer has: a first side surface facing the electrical element; a second side surface opposite to the first side surface; and a first upper surface. The second layer has: a bottom surface in contact with the first upper surface; a third side surface facing the electrical element; a fourth side surface opposite to the third side surface; and, the second upper surface, The third side surface and the fourth side surface overlap with the first upper surface.

6. The electronic device according to claim 5, wherein: The sealing film is in contact with the second upper surface.

7. The electronic device according to claim 1, wherein The electrical component comprises: a lower electrode disposed on the inorganic insulating film; an organic layer disposed on the lower electrode; and an upper electrode disposed on the organic layer, The lower electrode, the organic layer, and the upper electrode are formed in an island shape in an inner region surrounded by the partition wall. The lower electrode is spaced apart from the partition wall. The upper electrode is in contact with the first layer and the second layer.

8. The electronic device according to claim 1, wherein The inorganic insulating film, the second layer, and the sealing film are formed of silicon nitride or aluminum oxide.

9. The electronic device according to claim 1, wherein The electrical element is a light emitting element or a sensor.

10. The electronic device according to claim 1, wherein The strip portion runs in a curved manner.

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