Semiconductor device, busbar, and power conversion device

Abstract

The present application provides a kind of semiconductor device, bus and power conversion device that can inhibit the increase of the inductance while ensuring the insulation performance between terminals, and the large-scale of device is inhibited. For example, semiconductor device (1) is provided with: the first terminal (110) that protrudes from sealing body (100) along the specified direction;And the second terminal (120) is adjacent to the first terminal (110) with interval, and protrudes from sealing body (100) along the specified direction to the same direction as the first terminal (110). The first terminal (110) has the first exposed part (112) exposed outside the sealing body (100). The second terminal (120) has the second covering part (121) protruding from the sealing body (100) and covered by insulating material, and the second exposed part (122) protrudes from the second covering part (121) and is exposed outside the sealing body (100). The distance D2 from the top end part (121a) of the second covering part (121) to the sealing body (100) along the specified direction is longer than the distance D1 from the top end part (112a) of the first exposed part (112) to the sealing body (100) along the specified direction.

Description

Technical Field

[0001] This invention relates to semiconductor devices, busbars, and power conversion devices. Background Technology

[0002] As a technique to ensure insulation performance between terminals protruding from a resin package containing a sealed semiconductor element, there is, for example, the technique described in Patent Document 1.

[0003] Patent Document 1 describes a semiconductor device comprising: a sealing portion that seals adjacent first lead terminals and second lead terminals; and an insulating lead cover portion that extends from the end of the sealing portion and covers the second lead terminal in such a way that the tip of the outer lead of the second lead terminal is exposed.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Patent No. 6345608. Summary of the Invention

[0007] The problem the invention aims to solve

[0008] In the semiconductor device described in Patent Document 1, a creepage distance between the first and second lead terminals is ensured by providing a lead cover portion on the second lead terminal. However, in the semiconductor device described in Patent Document 1, the spatial distance between the first and second lead terminals is ensured only by increasing the spacing between them. Increasing the spacing between the first and second lead terminals leads to a larger device size and an increase in inductance. This same problem arises for power conversion devices that have a busbar connected to a terminal of the semiconductor device, and whose main circuit section comprises the terminals of the semiconductor device and the busbar.

[0009] The present invention was made in view of the above circumstances, and its object is to provide a semiconductor device, busbar, and power conversion device that can ensure insulation performance between terminals and suppress the increase in size and inductance of the device.

[0010] Technical means to solve the problem

[0011] To address the aforementioned issues, the semiconductor device of the present invention comprises: a sealing body in which a semiconductor element is sealed with resin; a first terminal connected to the semiconductor element and protruding from the sealing body along a predetermined direction; and a second terminal connected to the semiconductor element, spaced apart from the first terminal, and protruding from the sealing body along the predetermined direction in the same direction as the first terminal, the first terminal having a first exposed portion extending in the predetermined direction and exposed outside the sealing body, the second terminal having: a covering portion protruding from the sealing body and extending in the predetermined direction and covered by an insulating material; and a second exposed portion protruding from the covering portion and extending in the predetermined direction and exposed outside the sealing body, wherein the distance from the top end of the covering portion to the sealing body along the predetermined direction is longer than the distance from the top end of the first exposed portion to the sealing body along the predetermined direction.

[0012] The effects of the invention

[0013] According to the present invention, it is possible to ensure the insulation performance between terminals and to suppress the increase in size and inductance of the device.

[0014] Other issues, structures, and effects not mentioned above will be clarified through the following description of the implementation methods. Attached Figure Description

[0015] Figure 1 This is a diagram showing the appearance of the semiconductor device according to Embodiment 1.

[0016] Figure 2 Along Figure 1 The diagram shows a cross-sectional view of a semiconductor device cut by the AA line.

[0017] Figure 3 It means Figure 1 A comparative example of the semiconductor device shown.

[0018] Figure 4 This is a diagram showing the appearance of the busbar in Embodiment 1.

[0019] Figure 5 It is along Figure 4 The diagram shows a cross-sectional view of the BB line cut off from the busbar.

[0020] Figure 6 It means Figure 4 A diagram showing a comparative example of the busbars.

[0021] Figure 7 This is a diagram showing the appearance of the power conversion device according to Embodiment 1.

[0022] Figure 8 It means Figure 7A diagram showing a comparative example of a power conversion device.

[0023] Figure 9 This is a diagram showing the appearance of the semiconductor device according to Embodiment 2.

[0024] Figure 10 It is along Figure 9 The diagram shows a cross-sectional view of a semiconductor device cut by a CC line.

[0025] Figure 11 This is a top view of the busbar in Implementation Method 2.

[0026] Figure 12 From Figure 11 The direction of arrow E is shown in the side view of the busbar.

[0027] Figure 13 It is along Figure 11 The diagram shows a cross-sectional view of the FF line cutting the busbar.

[0028] Figure 14 This is a cross-sectional view of the power conversion device according to Embodiment 2. Detailed Implementation

[0029] Hereinafter, embodiments of the present invention will be described using the accompanying drawings. Furthermore, unless otherwise specified, components that are given the same symbols in each embodiment have the same function in each embodiment, and therefore their descriptions are omitted. Additionally, in the necessary drawings, orthogonal coordinate axes consisting of the x-axis, y-axis, and z-axis are shown to clarify the position of each part.

[0030] [Implementation Method 1]

[0031] Figure 1 This is a diagram showing the appearance of the semiconductor device 1 according to Embodiment 1. Figure 2 It is along Figure 1 The diagram shows a cross-sectional view of the AA-line cut semiconductor device 1. Figure 3 It means Figure 1 A comparative example of the semiconductor device 1 shown.

[0032] Semiconductor device 1 is a power semiconductor module used in power conversion devices 3 such as inverters. Semiconductor device 1 is a power semiconductor module widely used in civilian, automotive, railway, industrial, and infrastructure fields. Figure 1 The semiconductor device 1 shown is, for example, a power semiconductor module installed in an electric vehicle such as a hybrid electric vehicle, electric vehicle, or fuel cell vehicle. The semiconductor device 1 converts the DC voltage input from the battery into an analog AC voltage and outputs it through the switching action of semiconductor elements. The semiconductor device 1 is connected to a device described later. Figure 4 Busbar 2 shown (refer to) Figure 7 Semiconductor device 1 and bus 2, together with capacitor module (not shown), constitute the main circuit section of power conversion device 3.

[0033] like Figure 1 As shown, the semiconductor device 1 has a sealing body 100, a first terminal 110, a second terminal 120, an output terminal 130, and a control terminal 140.

[0034] The seal 100 is a structure in which the constituent elements of the semiconductor device 1, such as the first semiconductor element 151, are sealed with resin. The seal 100 is a structure that seals the constituent elements of the semiconductor device 1 using transfer molding or the like with a resin material 101 such as epoxy resin. The seal 100 is formed into a rectangular plate shape with a predetermined thickness. The seal 100 constitutes the resin encapsulation of the semiconductor device 1.

[0035] like Figure 2 As shown, the sealing body 100 has a first semiconductor element 151, a second semiconductor element 152, a first circuit conductor 154, a second circuit conductor 155, a first insulating layer 156, a second insulating layer 157, a first heat dissipation conductor 158, and a second heat dissipation conductor 159.

[0036] The first semiconductor element 151 is composed of power semiconductor elements such as IGBT (Insulated Gate Bipolar Transistor) or IEGT (Injection Enhanced Gate Transistor).

[0037] The second semiconductor element 152 is composed of diodes such as FWD (Free Wheeling Diode). Figure 1 The semiconductor device 1 shown includes a first semiconductor element 151 and a second semiconductor element 152 constituting the upper arm circuit, and a first semiconductor element 151 and a second semiconductor element 152 constituting the lower arm circuit. Figure 1 The semiconductor device 1 shown is a 2-in-1 power module.

[0038] The first semiconductor element 151 and the second semiconductor element 152 have a rectangular chip shape. The first semiconductor element 151 has a pair of main surfaces 151a and 151b with large areas and electrode surfaces formed thereon. The second semiconductor element 152 has a pair of main surfaces 152a and 152b with large areas and electrode surfaces formed thereon. One main surface 151a of the first semiconductor element 151 and one main surface 152a of the second semiconductor element 152 are bonded to a first circuit conductor 154 via a bonding material 153 such as solder. The other main surface 151b of the first semiconductor element 151 and the other main surface 152b of the second semiconductor element 152 are bonded to a second circuit conductor 155 via a bonding material 153.

[0039] The first circuit conductor 154 and the second circuit conductor 155 are formed into a plate shape using a metallic material with excellent electrical and thermal conductivity, such as copper or aluminum. The first circuit conductor 154 and the second circuit conductor 155 are patterned into a circuit using etching or the like. The first circuit conductor 154 and the second circuit conductor 155 are bonded to the first terminal 110, the second terminal 120, the output terminal 130, and the control terminal 140 via a bonding material 153. The first circuit conductor 154 is connected to a control electrode formed on another main surface 151b of the first semiconductor element 151 via a wire 160.

[0040] The surface of the first circuit conductor 154 opposite to the surface that is bonded to the first semiconductor element 151 and the second semiconductor element 152 is bonded to the first insulating layer 156. The surface of the second circuit conductor 155 opposite to the surface that is bonded to the first semiconductor element 151 and the second semiconductor element 152 is bonded to the second insulating layer 157.

[0041] The first insulating layer 156 and the second insulating layer 157 are formed into a plate shape using a ceramic material with excellent insulation, thermal conductivity, and toughness, such as silicon nitride or aluminum nitride. The surface of the first insulating layer 156 opposite to the surface that is bonded to the first circuit conductor 154 is bonded to the first heat dissipation conductor 158. The surface of the second insulating layer 157 opposite to the surface that is bonded to the second circuit conductor 155 is bonded to the second heat dissipation conductor 159.

[0042] The first heat dissipation conductor 158 and the second heat dissipation conductor 159 are formed into a plate shape using a metal material with excellent thermal conductivity and strength, such as copper or aluminum. The first heat dissipation conductor 158 is formed such that its surface 158a, opposite to the surface that bonds to the first insulating layer 156, protrudes from the resin material 101. The second heat dissipation conductor 159 is formed such that its surface 159a, opposite to the surface that bonds to the second insulating layer 157, protrudes from the resin material 101. Surfaces 158a and 159a are arranged parallel to each other. Surfaces 158a and 159a constitute a large portion of the main surface 100a of the sealing body 100.

[0043] Alternatively, the first heat dissipation conductor 158, the first insulating layer 156, and the first circuit conductor 154 may also be composed of an insulating circuit board that has been pre-bonded together by diffusion bonding or the like. The second heat dissipation conductor 159, the second insulating layer 157, and the second circuit conductor 155 may also be composed of an insulating circuit board that has been pre-bonded together by diffusion bonding or the like.

[0044] The first terminal 110 and the second terminal 120 are respectively formed into flat strips using a metal material with excellent conductivity, such as copper or aluminum. The first terminal 110 and the second terminal 120 are connected to the first semiconductor element 151 and the second semiconductor element 152 via a first circuit conductor 154, a second circuit conductor 155, and a bonding material 153, respectively. The first terminal 110 and the second terminal 120 can be any one of a DC positive terminal, a DC negative terminal, an AC output terminal, or a control terminal. In this embodiment, it is assumed that the first terminal 110 is a DC negative terminal, the second terminal 120 is a DC positive terminal, the output terminal 130 is an AC output terminal, and the control terminal 140 is a control terminal.

[0045] The first terminal 110 protrudes from the sealing body 100 along a predetermined direction. The first terminal 110 protrudes from the side portion 100b of the sealing body 100 along the main surface 100a of the sealing body 100 in the short-side direction. Figure 1 In this example, the protruding direction of the first terminal 110 is the +x axis direction. The first terminal 110 has a first covering portion 111 that protrudes from the sealing body 100 and extends in a predetermined direction and is covered by an insulating material, and a first exposed portion 112 that protrudes from the first covering portion 111 and extends in a predetermined direction and is exposed outside the sealing body 100. The insulating material forming the first covering portion 111 may be made of the same material as the resin material 101, or it may be made of a different resin material than the resin material 101.

[0046] The base end of the first cover portion 111 corresponds to the base end of the first terminal 110 and is connected to the sealing body 100. The top end portion 111a of the first cover portion 111 is connected to the base end of the first exposed portion 112. The top end portion 112a of the first exposed portion 112 corresponds to the top end portion of the first terminal 110.

[0047] The second terminal 120 protrudes from the sealing body 100 in a predetermined direction in the same direction as the first terminal 110. The second terminal 120 is adjacent to the first terminal 110 in a spaced-apart manner.

[0048] The direction along the interval between the first terminal 110 and the second terminal 120 is perpendicular to a predetermined direction that serves as the protruding direction of the first terminal 110 and the second terminal 120, and is perpendicular to the direction along the main surface 100a of the sealing body 100. Figure 1In the example, the direction along the interval between the first terminal 110 and the second terminal 120 is the y-axis direction. The second terminal 120 has a second cover portion 121 that protrudes from the sealing body 100 and extends in a predetermined direction and is covered by an insulating material, and a second exposed portion 122 that protrudes from the second cover portion 121 and extends in a predetermined direction and is exposed outside the sealing body 100.

[0049] The insulating material forming the second cover portion 121 can be made of the same material as the resin material 101, or it can be made of a different resin material. The base end of the second cover portion 121 corresponds to the base end of the second terminal 120 and is connected to the sealing body 100. The top end portion 121a of the second cover portion 121 is connected to the base end of the second exposed portion 122. The top end portion 122a of the second exposed portion 122 corresponds to the top end portion of the second terminal 120. Furthermore, the second cover portion 121 corresponds to an example of the "cover portion" described in the claims.

[0050] In semiconductor device 1, the first terminal 110 and the second terminal 120 are alternately arranged from one end along the interval between the first terminal 110 and the second terminal 120 to the other end. Figure 1 In the example, in the -y axis direction, the two sets of first terminals 110 and second terminals 120 are arranged alternately. That is, in Figure 1 In the example, the first group of first terminals 110, the first group of second terminals 120, the second group of first terminals 110, and the second group of second terminals 120 are arranged sequentially in the direction of the -y axis.

[0051] The output terminal 130 protrudes from the side portion 100b opposite to the side portion 100b of the sealing body 100, which is provided with the first terminal 110 and the second terminal 120, along the main surface 100a of the sealing body 100 in a direction opposite to that of the first terminal 110 and the second terminal 120. The output terminal 130 has a third covering portion 131 that protrudes from the sealing body 100 and extends in a predetermined direction and is covered by an insulating material, and a third exposed portion 132 that protrudes from the third covering portion 131 and extends in a predetermined direction and is exposed outside the sealing body 100. The insulating material forming the third covering portion 131 may be made of the same material as the resin material 101, or it may be made of a resin material different from the resin material 101.

[0052] Control terminals 140 are provided on the side portion 100b of the sealing body 100 where the first terminal 110 and the second terminal 120 are provided, and on the side portion 100b of the sealing body 100 where the output terminal 130 is provided. Specifically, one control terminal 140 protrudes from the side portion 100b of the sealing body 100 where the first terminal 110 and the second terminal 120 are provided, along the main surface 100a of the sealing body 100 in the same direction as the first terminal 110 and the second terminal 120. One control terminal 140 is spaced apart from the second terminal 120 and adjacent to it. The length of one control terminal 140 protruding from the sealing body 100 is shorter than the length of the second cover portion 121 of the second terminal 120 protruding from the sealing body 100. The other control terminal 140 protrudes from the side portion 100b of the sealing body 100 where the output terminal 130 is provided, along the main surface 100a of the sealing body 100 in the opposite direction to the first terminal 110 and the second terminal 120. Another control terminal 140 is spaced apart from the output terminal 130 and adjacent to the output terminal 130.

[0053] However, for the power conversion device 3, which consists of semiconductor device 1 and bus 2, there is a requirement to increase the power that can be handled. One method to increase the power that can be handled is to increase the current flowing through the power conversion device 3. However, increasing the current increases the heat generated by the power conversion device 3. To reduce the heat generated by the power conversion device 3, increasing the amount of conductor in the current path is considered, but this increases the weight and volume of the power conversion device 3, which becomes a problem. Especially when the power conversion device 3 is used in electric vehicles, if the weight and volume of the power conversion device 3 increase, the vehicle's driving performance and power consumption performance will decrease. Therefore, increasing the voltage that can be handled is an effective method to increase the power that can be handled in the power conversion device 3. For example, in the power conversion devices 3 currently commonly used in hybrid or electric vehicles, the voltage that can be handled is mainly 200V to 400V, but this is expected to increase to 600V to 800V in the near future. Increasing the voltage of the power conversion device 3 allows for greater power output without increasing the amount of conductor, and is therefore effective. In addition, regarding the charging time of electric vehicle batteries, if the voltage that can be handled in general fast charging equipment is increased from the current 400V to 800V, then even for the same amount of charge, half the charging time would be sufficient.

[0054] As described above, increasing the voltage of the power conversion device 3 is an effective method for increasing its power output, but the power conversion device 3 needs to ensure its insulation performance can withstand the increased voltage. One method to ensure the insulation performance of the power conversion device 3 can withstand the increased voltage is to ensure the insulation distance. In devices such as the semiconductor device 1, busbar 2, and power conversion device 3, the insulation distance must meet the spatial distance P and creepage distance Q specified in the international standard IEC 60664-1 (JISc 60664-1 in the Japanese Industrial Standard). In this standard, the necessary spatial distance P and creepage distance Q are determined based on the voltage or environment (contamination level, etc.) of the semiconductor device 1, etc. Spatial distance P refers to the minimum distance in space between two conductive parts. Creepage distance Q is the minimum distance along the surface of the insulator between two conductive parts. The larger the spatial distance P and creepage distance Q, the less likely an electrical short circuit (insulation failure) will occur between the two conductive parts. Therefore, the insulation performance of the device can be easily ensured, and the reliability of the device can be easily ensured.

[0055] Here, as Figure 1 and Figure 3 As shown, the distance from the top end 112a of the first exposed portion 112 of the first terminal 110 to the sealing body 100 along a predetermined direction is defined as distance D1. The distance from the top end 121a of the second covering portion 121 of the second terminal 120 to the sealing body 100 along a predetermined direction is defined as distance D2. The distance from the top end 122a of the second exposed portion 122 of the second terminal 120 to the sealing body 100 along a predetermined direction is defined as distance D3. Figure 1 and Figure 3 In the example, distance D1 corresponds to the length by which the first terminal 110 protrudes from the sealing body 100. Distance D2 corresponds to the length by which the second cover 121 of the second terminal 120 protrudes from the sealing body 100. Distance D3 corresponds to the length by which the second terminal 120 protrudes from the sealing body 100.

[0056] exist Figure 3 In the comparative example shown, the length of the second terminal 120 protruding from the sealing body 100 is equal to the length of the first terminal 110 protruding from the sealing body 100. Furthermore, the length of the second covering portion 121 of the second terminal 120 protruding from the sealing body 100 is equal to the length of the first covering portion 111 of the first terminal 110 protruding from the sealing body 100. Of course, the length of the second exposed portion 122 of the second terminal 120 protruding from the sealing body 100 is equal to the length of the first exposed portion 112 of the first terminal 110 protruding from the sealing body 100. That is, in Figure 3 In the comparative example shown, distances D3 and D1 are equal, while distance D2 is shorter than distance D1.

[0057] exist Figure 3 In the comparative example shown, the spatial distance P between the first terminal 110 and the second terminal 120 is the distance between the first exposed portion 112 of the first terminal 110 and the second exposed portion 122 of the second terminal 120. The creepage distance Q between the first terminal 110 and the second terminal 120 is the distance from the top end portion 111a of the first cover portion 111 along the base end portion of the first cover portion 111, the sealing body 100, and the base end portion of the second cover portion 121 to the top end portion 121a of the second cover portion 121. Figure 3 In the comparative example shown, the direction of extension of the spatial distance P between the first terminal 110 and the second terminal 120 is parallel to the direction (y-axis direction) along the interval between the first terminal 110 and the second terminal 120. The creepage distance Q between the first terminal 110 and the second terminal 120 is the same length between the portion along the surface of the second covering portion 121 of the second terminal 120 and the portion along the surface of the first covering portion 111 of the first terminal 110.

[0058] In contrast, Figure 1 In the semiconductor device 1 shown, the distance D2 is longer than the distance D1. That is, in Figure 1 In the semiconductor device 1 shown, a second cover portion 121 is disposed on the second terminal 120 adjacent to the first exposed portion 112 of the first terminal 110 in a direction along the interval between the first terminal 110 and the second terminal 120. Figure 1 In the semiconductor device 1 shown, in order to make the distance D2 longer than the distance D1, the distance D3 is configured to be longer than the distance D1. That is, in Figure 1 In the semiconductor device 1 shown, the second cover portion 121 of the second terminal 120 protrudes from the sealing body 100 by a longer length than the first exposed portion 112 of the first terminal 110 protrudes from the sealing body 100. Of course, the second terminal 120 protrudes from the sealing body 100 by a longer length than the first terminal 110 protrudes from the sealing body 100.

[0059] exist Figure 1 In the semiconductor device 1 shown, the spatial distance P between the first terminal 110 and the second terminal 120 is the distance between the top end 112a of the first exposed portion 112 of the first terminal 110 and the base end of the second exposed portion 122 of the second terminal 120, and the base end of the second exposed portion 122 is connected to the top end 121a of the second cover portion 121. The creepage distance Q between the first terminal 110 and the second terminal 120 is the distance from the top end 111a of the first cover portion 111 of the first terminal 110 along the base end of the first cover portion 111, the seal 100, and the base end of the second cover portion 121 of the second terminal 120 to the top end 121a of the second cover portion 121. Figure 1In the semiconductor device 1 shown, since distance D2 is longer than distance D1, the direction of spatial distance P can be tilted relative to the direction (y-axis direction) along the interval between the first terminal 110 and the second terminal 120. Figure 1 In the semiconductor device 1 shown, even if the spacing between the first terminal 110 and the second terminal 120 is... Figure 3 The comparative example shown is short, yet it still ensures the necessary spatial distance P. In Figure 1 In the semiconductor device 1 shown, since the distance D2 is longer than the distance D1, the portion of the creepage distance Q of the first terminal 110 and the second terminal 120 along the surface of the second cover portion 121 of the second terminal 120 is longer than that of the second terminal 120. Figure 3 The comparative example shown is long. In Figure 1 In the semiconductor device 1 shown, even if the spacing between the first terminal 110 and the second terminal 120 is... Figure 3 The comparative example shown is short, yet it still ensures the necessary creepage distance Q.

[0060] In the semiconductor device 1 of Embodiment 1, since the distance D2 is longer than the distance D1, the necessary spatial distance P and creepage distance Q can be ensured, and the interval between the first terminal 110 and the second terminal 120 can be shortened. In the semiconductor device 1, the dimension along the interval between the first terminal 110 and the second terminal 120 can be shortened, enabling miniaturization of the semiconductor device 1. By miniaturizing the semiconductor device 1, the busbar 2 connected to the semiconductor device 1 can be miniaturized, and the power conversion device 3 constructed through the connection to the busbar 2 can be miniaturized.

[0061] Furthermore, in the semiconductor device 1 of Embodiment 1, since the distance D2 is longer than the distance D1, a second covering portion 121 is disposed on the second terminal 120 adjacent to the first exposed portion 112 of the first terminal 110 in the direction along the interval between the first terminal 110 and the second terminal 120. That is, in the semiconductor device 1, a covering portion covered by insulating material is disposed in the portion where the shortest distance is formed between the adjacent first terminal 110 and the second terminal 120. In the semiconductor device 1, even in the event of overvoltage such as when the first terminal 110 and the second terminal 120 are switched on / off, it is possible to suppress the occurrence of electrical short circuit (insulation failure) between the first terminal 110 and the second terminal 120. The semiconductor device 1 can improve insulation performance and improve reliability. In the semiconductor device 1, by improving the reliability of the semiconductor device 1, the reliability of the power conversion device 3 configured by the connection with the bus 2 can be improved.

[0062] Furthermore, in the semiconductor device 1 of Embodiment 1, by shortening the distance between the first terminal 110 of the DC negative terminal and the second terminal 120 of the DC positive terminal, the mutual inductance between the first terminal 110 of the DC negative terminal and the second terminal 120 of the DC positive terminal can be increased. As a result, the semiconductor device 1 can reduce the overall combined inductance between the semiconductor device 1 and the bus 2 constituting the power conversion device 3, and can reduce overvoltage or noise during switching on / off.

[0063] Furthermore, in semiconductor device 1, if the distance D2 is longer than the distance D1, the gap between the first terminal 110 and the second terminal 120 can be shortened while ensuring the necessary insulation distance, so the first terminal 110 does not need to have a first cover portion 111. However, in semiconductor device 1, since the first terminal 110 has a first cover portion 111, it is easier to ensure the necessary creepage distance Q compared to the case without the first cover portion 111, so the gap between the first terminal 110 and the second terminal 120 can be further shortened. Therefore, having a first cover portion 111 on the first terminal 110 can achieve device miniaturization, improved insulation performance and reliability, and reduced combined inductance, and is therefore preferred.

[0064] Furthermore, in the above embodiment, the case where the first terminal 110 is a DC negative terminal and the second terminal 120 is a DC positive terminal has been described. In the semiconductor device 1, the first terminal 110 can be a DC positive terminal and the second terminal 120 can be a DC negative terminal, and the same effect as in the above embodiment can be obtained.

[0065] Figure 4 This is a diagram showing the appearance of busbar 2 in embodiment 1. Figure 5 It is along Figure 4 The diagram shows a cross-sectional view of the BB line cutting through busbar 2. Figure 6 It means Figure 4 A diagram showing a comparative example of busbar 2.

[0066] Busbar 2 is connected to semiconductor device 1, forming the main circuit section of power conversion device 3. Busbar 2 is connected to the first terminal 110 and the second terminal 120 of semiconductor device 1. Busbar 2 is also connected to the first terminal 110 and the second terminal 120 of each of the plurality of semiconductor devices 1.

[0067] Figure 4 The bus 2 shown is the bus 2 of the semiconductor device 1 that connects three 2in1 power modules in parallel.

[0068] like Figure 4 As shown, busbar 2 has a shaped body 200, a first busbar terminal 210 and a second busbar terminal 220.

[0069] The molded body 200 is a structure formed by resin molding of various components of the busbar 2 using resin material 201 such as PPS (Poly Phenylene Sulfide) resin through injection molding. The molded body 200 is formed into a rectangular flat plate with a specified thickness. Figure 5 As shown, the molded body 200 has a first conductor plate 251, a second conductor plate 252 and an insulating layer 253.

[0070] The first conductor plate 251 and the second conductor plate 252 are respectively formed into plates using metal materials with excellent electrical and thermal conductivity, such as copper or aluminum. The first conductor plate 251 and the second conductor plate 252 are respectively connected to the first terminal 210 and the second terminal 220 of the busbar.

[0071] The insulating layer 253 is formed into a plate shape using a resin material with excellent insulating properties, such as PPS resin. The first conductor plate 251 and the second conductor plate 252 are arranged opposite each other, separated by the insulating layer 253. The second conductor plate 252, the insulating layer 253, and the first conductor plate 251 are stacked sequentially, and resin molding is performed using resin material 201. Figure 4 In the molded body 200 shown, the first conductor plate 251, the second conductor plate 252, and the insulating layer 253 are sealed with resin material 201. The main surface 200a of the molded body 200 is along the surface of the first conductor plate 251 and the second conductor plate 252.

[0072] The first busbar terminal 210 and the second busbar terminal 220 are respectively formed into flat strips using a metal material with excellent conductivity, such as copper or aluminum. The first busbar terminal 210 is connected to the second terminal 120 of the semiconductor device 1. The second busbar terminal 220 is connected to the first terminal 110 of the semiconductor device 1.

[0073] The first busbar terminal 210 protrudes from the molded body 200 along a specific direction. The first busbar terminal 210 protrudes from the side portion 200b of the molded body 200 along the main surface 200a of the molded body 200 in the short side direction. Figure 4In this example, the protruding direction of the first busbar terminal 210 is the -x-axis direction. The first busbar terminal 210 has: a first busbar cover 211, which protrudes from the molded body 200 and extends in a specific direction, and is covered by an insulating cover material; and a first busbar exposed portion 212, which protrudes from the first busbar cover 211 and extends in a specific direction, exposed outside the molded body 200. The cover material forming the first busbar cover 211 can be made of the same material as the resin material 201, or it can be made of a different resin material. The base end of the first busbar cover 211 corresponds to the base end of the first busbar terminal 210 and is connected to the molded body 200. The top end 211a of the first busbar cover 211 is connected to the base end of the first busbar exposed portion 212. The top end 212a of the first busbar exposed portion 212 corresponds to the top end of the first busbar terminal 210.

[0074] The second busbar terminal 220 protrudes from the molded body 200 in a specific direction, in the same direction as the first busbar terminal 210. The second busbar terminal 220 is spaced apart from the first busbar terminal 210 and adjacent to it. The direction of the interval between the first busbar terminal 210 and the second busbar terminal 220 is perpendicular to the specific direction that is the protrusion direction of the first busbar terminal 210 and the second busbar terminal 220, and is also perpendicular to the direction along the main surface 200a of the molded body 200. Figure 4 In the example, the direction of the interval between the first busbar terminal 210 and the second busbar terminal 220 is the y-axis direction. The direction of the interval between the first busbar terminal 210 and the second busbar terminal 220 is parallel to the direction of the interval between the first terminal 110 and the second terminal 120 of the semiconductor device 1. The second busbar terminal 220 has: a second busbar cover portion 221, which protrudes from the molded body 200 and extends in a specific direction, and is covered by an insulating cover material; and a second busbar exposed portion 222, which protrudes from the second busbar cover portion 221 and extends in a specific direction, and is exposed outside the molded body 200. The cover material forming the second busbar cover portion 221 can be made of the same material as the resin material 201, or it can be made of a resin material different from the resin material 201. The base end portion of the second busbar cover portion 221 corresponds to the base end portion of the second busbar terminal 220 and is connected to the molded body 200. The top end portion 221a of the second busbar cover portion 221 is connected to the base end portion of the second busbar exposed portion 222. The top end 222a of the second exposed portion 222 of the busbar corresponds to the top end of the second terminal 220 of the busbar. Furthermore, the second covered portion 221 of the busbar corresponds to an example of the "busbar covered portion" described in the claims.

[0075] In busbar 2, the first terminal 210 and the second terminal 220 are arranged alternately from one end along the interval between them toward the other end. In busbar 2, the first terminal 210 is connected to the second terminal 120 of semiconductor device 1, and the second terminal 220 is connected to the first terminal 110 of semiconductor device 1. Therefore, in busbar 2, the arrangement order of the first terminal 210 and the second terminal 220 is configured to be the reverse of the arrangement order of the first terminal 110 and the second terminal 120 of semiconductor device 1. Figure 4 In the example, bus 2 is the bus 2 of the semiconductor device 1 that connects three 2-in-1 power modules in parallel. Therefore, facing the -y axis direction, the six sets of bus first terminals 210 and bus second terminals 220 are arranged alternately. That is, in Figure 4 In the example, the following terminals are arranged sequentially in the -y-axis direction: the first busbar second terminal 220, the first busbar first terminal 210, the second busbar second terminal 220, the second busbar first terminal 210, the third busbar second terminal 220, the third busbar first terminal 210, the fourth busbar second terminal 220, the fourth busbar first terminal 210, the fifth busbar second terminal 220, the fifth busbar first terminal 210, the sixth busbar second terminal 220, and the sixth busbar first terminal 210.

[0076] Here, as Figure 4 and Figure 6 As shown, the distance along a specific direction from the top end 212a of the first exposed portion 212 of the busbar at the first terminal 210 to the molded body 200 is defined as distance L1. The distance along a specific direction from the top end 221a of the second covered portion 221 of the busbar at the second terminal 220 to the molded body 200 is defined as distance L2. The distance along a predetermined direction from the top end 222a of the second exposed portion 222 of the busbar at the second terminal 220 to the molded body 200 is defined as distance L3. Figure 4 and Figure 6 In the example, distance L1 corresponds to the length by which the first busbar terminal 210 protrudes from the molded body 200. Distance L2 corresponds to the length by which the second busbar cover 221 of the second busbar terminal 220 protrudes from the molded body 200. Distance L3 corresponds to the length by which the second busbar terminal 220 protrudes from the molded body 200.

[0077] exist Figure 6In the comparative example shown, the length of the second busbar terminal 220 protruding from the molded body 200 is equal to the length of the first busbar terminal 210 protruding from the molded body 200. Furthermore, the length of the second busbar cover 221 of the second busbar terminal 220 protruding from the molded body 200 is equal to the length of the first busbar cover 211 of the first busbar terminal 210 protruding from the molded body 200. Of course, the length of the second busbar exposed portion 222 of the second busbar terminal 220 protruding from the molded body 200 is equal to the length of the first busbar exposed portion 212 of the first busbar terminal 210 protruding from the molded body 200. That is, in Figure 6 In the comparative example shown, distance L3 is equal to distance L1, and distance L2 is shorter than distance L1.

[0078] exist Figure 6 In the comparative example shown, the spatial distance P between the first busbar terminal 210 and the second busbar terminal 220 is the distance between the first exposed portion 212 of the first busbar terminal 210 and the second exposed portion 222 of the second busbar terminal 220. The creepage distance Q between the first busbar terminal 210 and the second busbar terminal 220 is the distance from the top end portion 211a of the first busbar cover portion 211 along the base end portion of the first busbar cover portion 211, the molded body 200, and the base end portion of the second busbar cover portion 221 to the top end portion 221a of the second busbar cover portion 221. Figure 6 In the comparative example shown, the direction of extension of the spatial distance P between the first busbar terminal 210 and the second busbar terminal 220 is parallel to the direction (y-axis direction) along the interval between the first busbar terminal 210 and the second busbar terminal 220. The creepage distance Q between the first busbar terminal 210 and the second busbar terminal 220 is the same length in the portion along the surface of the second busbar cover 221 of the second busbar terminal 220 and in the portion along the surface of the first busbar cover 211 of the first busbar terminal 210.

[0079] In contrast, Figure 4 In the busbar 2 shown, the distance L2 is longer than the distance L1. That is, in Figure 4 In the busbar 2 shown, a second busbar cover 221 is disposed on the second busbar terminal 220 adjacent to the first exposed portion 212 of the first busbar terminal 210 in a direction along the interval between the first busbar terminal 210 and the second busbar terminal 220. Figure 4 In the busbar 2 shown, to make distance L2 longer than distance L1, distance L3 is configured to be longer than distance L1. That is, in Figure 4In the busbar 2 shown, the length of the second busbar cover 221 of the second busbar terminal 220 protruding from the molded body 200 is longer than the length of the first busbar exposed portion 212 of the first busbar terminal 210 protruding from the molded body 200. Of course, the length of the second busbar terminal 220 protruding from the molded body 200 is longer than the length of the first busbar terminal 210 protruding from the molded body 200.

[0080] exist Figure 4 In the busbar 2 shown, the spatial distance P between the first busbar terminal 210 and the second busbar terminal 220 is the distance between the top end 212a of the first exposed portion 212 of the first busbar terminal 210 and the base end of the second exposed portion 222 of the second busbar terminal 220. The base end of the second exposed portion 222 is connected to the top end 221a of the second cover portion 221 of the busbar. The creepage distance Q between the first busbar terminal 210 and the second busbar terminal 220 is the distance from the top end 211a of the first cover portion 211 of the first busbar terminal 210 along the base end of the first cover portion 211, the molded body 200, and the base end of the second cover portion 221 of the second busbar terminal 220 to the top end 221a of the second cover portion 221 of the busbar. Figure 4 In the busbar 2 shown, since distance L2 is longer than distance L1, the direction of spatial distance P can be tilted relative to the direction (y-axis direction) of the interval between the first terminal 210 and the second terminal 220 of the busbar. Figure 4 In the busbar 2 shown, even if the spacing ratio between the first terminal 210 and the second terminal 220 of the busbar is... Figure 6 The comparative example shown is short, yet it still ensures the necessary spatial distance P. In Figure 4 In the busbar 2 shown, since the distance L2 is longer than the distance L1, the portion of the creepage distance Q along the surface of the second busbar cover 221 of the second busbar terminal 220 can be longer than that of the first busbar terminal 210 and the second busbar terminal 220. Figure 6 The comparative example shown is long. In Figure 4 In the busbar 2 shown, even if the spacing between the first terminal 210 and the second terminal 220 of the busbar is... Figure 6 The comparative example shown is short, yet it still ensures the necessary creepage distance Q.

[0081] In the busbar 2 of Embodiment 1, the distance L2 is longer than the distance L1, thus ensuring the necessary spatial distance P and creepage distance Q, and shortening the gap between the first busbar terminal 210 and the second busbar terminal 220. By shortening the dimension along the direction of the gap between the first busbar terminal 210 and the second busbar terminal 220, the busbar 2 can be miniaturized. This miniaturization of the busbar 2 allows for the miniaturization of the semiconductor device 1 connected to it, and consequently, the miniaturization of the power conversion device 3 constructed by connecting to the semiconductor device 1.

[0082] Furthermore, in the busbar 2 of Embodiment 1, the distance L2 is longer than the distance L1. Therefore, in the direction of the interval between the first busbar terminal 210 and the second busbar terminal 220, a second busbar cover 221 is provided on the second busbar terminal 220 adjacent to the first exposed portion 212 of the first busbar terminal 210. That is, in the busbar 2, a cover portion covered by an insulating covering material is provided in the portion where the shortest distance is formed between the adjacent first busbar terminals 210 and second busbar terminals 220. In the busbar 2, even in the event of overvoltage such as when the first busbar terminal 210 and the second busbar terminal 220 are connected / disconnected, an electrical short circuit between the first busbar terminal 210 and the second busbar terminal 220 can be suppressed. The busbar 2 can improve insulation performance and improve reliability. By improving the reliability of the busbar 2, the reliability of the power conversion device 3 configured by connection with the semiconductor device 1 can be improved.

[0083] Furthermore, in bus 2 of embodiment 1, by shortening the interval between the first bus terminal 210 connected to the DC positive terminal and the second bus terminal 220 connected to the DC negative terminal, the mutual inductance between the first bus terminal 210 and the second bus terminal 220 can be increased. As a result, bus 2 can reduce the overall combined inductance between the semiconductor device 1 constituting the power conversion device 3 and bus 2, and can reduce overvoltage or noise during switching on / off.

[0084] Furthermore, in busbar 2, if the distance L2 is longer than the distance L1, the necessary insulation distance can be ensured, and the interval between the first busbar terminal 210 and the second busbar terminal 220 can be shortened. Therefore, the first busbar terminal 210 does not need to have a first busbar cover 211. However, in busbar 2, by having a first busbar cover 211 on the first busbar terminal 210, the necessary creepage distance Q is more easily ensured compared to the case without the first busbar cover 211, thus the interval between the first busbar terminal 210 and the second busbar terminal 220 can be further shortened. Therefore, having a first busbar cover 211 on the first busbar terminal 210 can achieve miniaturization of the device, improved insulation performance and reliability, and reduced combined inductance, and is therefore preferred.

[0085] Figure 7 This is a diagram showing the appearance of the power conversion device 3 according to Embodiment 1. Figure 8 It means Figure 7 A comparative example of the power conversion device 3 shown in the figure.

[0086] The power conversion device 3 includes a semiconductor device 1 and a busbar 2 connected to the semiconductor device 1. Figure 7 In the power conversion device 3 shown, relative to Figure 4 The busbar 2 shown is connected in parallel to 3 units. Figure 1 The semiconductor device 1 of the 2-in-1 power module shown. Figure 7 In the power conversion device 3 shown, the capacitor module (not shown) and... Figure 4 The busbar 2 shown is connected.

[0087] In power conversion device 3, such as Figure 7 As shown, the semiconductor device 1 and the busbar 2 are configured such that the protruding directions (i.e., the predetermined directions) of the first terminal 110 and the second terminal 120 are the same as the protruding directions (i.e., the specific directions) of the first terminal 210 and the second terminal 220 of the busbar. In the power conversion device 3, the semiconductor device 1 and the busbar 2 are configured such that the first terminal 110 is opposite to the second terminal 220 of the busbar, and the second terminal 120 is opposite to the first terminal 210 of the busbar. Furthermore, in the power conversion device 3, the semiconductor device 1 and the busbar 2 are configured such that the protruding directions (+x-axis direction) of the first terminal 110 and the second terminal 120 are opposite to the protruding directions (-x-axis direction) of the first terminal 210 and the second terminal 220 of the busbar.

[0088] Furthermore, in the power conversion device 3, the first exposed portion 112 of the first terminal 110 of the semiconductor device 1 and the bus 2 is connected to the second exposed portion 222 of the second terminal 220, and the second exposed portion 122 of the second terminal 120 is connected to the first exposed portion 212 of the first terminal 210. Specifically, in Figure 7 In the example, the power conversion device 3 makes the first exposed portion 112 and the second exposed portion 222 of the busbar coincide in the z-axis direction, and makes the second exposed portion 122 and the first exposed portion 212 of the busbar coincide in the z-axis direction, connecting the overlapping portions by welding or the like. Therefore, in the semiconductor device 1 and the busbar 2 of the power conversion device 3, the distance D2 is longer than the distance D1, and the distance L2 is longer than the distance L1. Furthermore, in... Figure 7 In the example, in the semiconductor device 1 and bus 2 of the power conversion device 3, the sum of distance D1 and distance L2 is equal to the sum of distance D2 and distance L1.

[0089] The connection between the first exposed portion 112 and the second exposed portion 222 of the busbar, and the connection between the second exposed portion 122 and the first exposed portion 212 of the busbar, are preferably performed by TIG (Tungsten Inert Gas) welding. However, these connections can be performed by welding other than TIG welding, such as laser welding or resistance welding, or by mechanical connections such as ultrasonic bonding or screw fastening.

[0090] In the power conversion device 3 of embodiment 1, such as for Figure 1 The semiconductor device 1 shown and Figure 4 As explained above regarding busbar 2, distance D2 is longer than distance D1, and distance L2 is longer than distance L1. On the other hand, in Figure 8 In the comparative examples shown, such as for Figure 3 The semiconductor device 1 and the comparative example shown Figure 6 As described above, in the comparative example shown, the distance D2 is shorter than the distance D1, and the distance L2 is shorter than the distance L1.

[0091] In the power conversion device 3 of Embodiment 1, the necessary spatial distance P and creepage distance Q can be ensured in the interval between the first terminal 110 and the second busbar terminal 220 and the second terminal 120 and the first busbar terminal 210, and the interval can be shortened. The power conversion device 3 can shorten the size of the semiconductor device 1 and the busbar 2 along the interval, and can miniaturize the power conversion device 3.

[0092] Furthermore, in the power conversion device 3 of Embodiment 1, an insulating cover is provided in the portion where the shortest distance is formed between the adjacent first terminal 110 and the second busbar terminal 220, and between the second terminal 120 and the first busbar terminal 210. Even in the event of overvoltage during switching on / off, the power conversion device 3 can suppress electrical short circuits in the interval between the first terminal 110 and the second busbar terminal 220, and between the second terminal 120 and the first busbar terminal 210. The power conversion device 3 improves insulation performance and reliability.

[0093] Furthermore, the power conversion device 3 of Embodiment 1 can increase the mutual inductance between the first terminal 110 and the second bus terminal 220 and the second terminal 120 and the first bus terminal 210. The power conversion device 3 can reduce the overall combined inductance between the semiconductor device 1 and the bus 2, and can reduce overvoltage or noise during switching on / off.

[0094] Furthermore, in the power conversion device 3 of Embodiment 1, the semiconductor device 1 and the bus 2 are configured such that the first terminal 110 faces the second terminal 220 of the bus, and the second terminal 120 faces the first terminal 210 of the bus. Additionally, the semiconductor device 1 and the bus 2 are configured such that the orientation of the first terminal 110 and the second terminal 120 is opposite to the orientation of the first terminal 210 and the second terminal 220 of the bus. Thus, in the power conversion device 3, the connection points of the first terminal 110 and the second terminal 220 of the bus and the connection points of the second terminal 120 and the first terminal 210 of the bus are alternately offset towards the sealing body 100 or the molding body 200 relative to the center line of the sealing body 100 and the molding body 200. The power conversion device 3 can ensure the necessary spatial distance P and creepage distance Q in the interval between the first terminal 110 and the second terminal 220 of the bus and the second terminal 120 and the first terminal 210 of the bus, and can further shorten this interval overall in the power conversion device 3. The power conversion device 3 can achieve miniaturization of the device, improved insulation performance and reliability, and reduced composite inductance.

[0095] Furthermore, in the power conversion device 3 of Embodiment 1, the sum of the distances D1 and L3 between the semiconductor device 1 and the bus 2 is equal to the sum of the distances D3 and L1. The protruding lengths of the terminals 110, 120, 210, and 220 protruding between the sealing body 100 and the molded body 200 are equal throughout the power conversion device 3. The power conversion device 3 can shorten the protruding lengths of the terminals 110, 120, 210, and 220 protruding between the sealing body 100 and the molded body 200 throughout the power conversion device 3. The power conversion device 3 can reduce the self-inductance of the terminals 110, 120, 210, and 220 protruding between the sealing body 100 and the molded body 200, and can further reduce the overall combined inductance of the power conversion device 3. The power conversion device 3 can shorten the dimension along the distance between the sealing body 100 and the molded body 200, and can further miniaturize the power conversion device 3.

[0096] [Implementation Method 2]

[0097] use Figures 9-14 The semiconductor device 1, bus 2, and power conversion device 3 of Embodiment 2 will be described. In the description of Embodiment 2, the same configuration and operation as in Embodiment 1 will be omitted.

[0098] As will be described later Figure 14As shown, in Embodiment 2, the semiconductor device 1 is configured such that the protruding directions of the first terminal 110 and the second terminal 120 are along the vertical direction. In this embodiment, the side closer to the bottom 170b of the housing 170 of the semiconductor device 1 in the vertical direction is also referred to as "bottom", and the side farther from the bottom 170b of the housing 170 is also referred to as "top".

[0099] Figure 9 This is a diagram showing the appearance of the semiconductor device 1 according to Embodiment 2. Figure 10 It is along Figure 9 The diagram shows a cross-sectional view of the CC-line cut semiconductor device 1.

[0100] The semiconductor device 1 of Embodiment 2 has a housing 170 for housing a sealing body 100. The housing 170 is formed into a flat cylindrical shape using a metal material with excellent thermal conductivity, such as copper or aluminum. The housing 170 includes a pair of first heat sinks 171 and second heat sinks 172, and a frame 173. The first heat sinks 171 and second heat sinks 172 are spaced apart from each other in a direction perpendicular to the main surface 100a of the sealing body 100, and are respectively arranged along the main surface 100a of the sealing body 100. An internal space of the housing 170 is formed between the first heat sinks 171 and second heat sinks 172. A plurality of fins 174 are provided on the outer surfaces of the first heat sinks 171 and second heat sinks 172 in an outwardly extending manner. The frame 173 fixes the first heat sinks 171 and second heat sinks 172. The frame 173 is connected to the first heat sinks 171 and second heat sinks 172 by laser welding or the like. The housing 170 has an opening 170a at one end and a bottom 170b at the other end.

[0101] In the sealing body 100 of Embodiment 2, the first terminal 110, the second terminal 120, the output terminal 130, and the control terminal 140 all protrude in the same direction from one side portion 100b of the sealing body 100 along a predetermined direction. The sealing body 100 housed in the housing 170 is configured such that each of the terminals 110 to 140 extending in the predetermined direction protrudes from the opening 170a to the outside of the housing 170.

[0102] In the sealing body 100 of Embodiment 2, the first circuit conductor 154 and the second circuit conductor 155 have lead frame structures. The first circuit conductor 154 and the second circuit conductor 155 have lead portions 154b and 155b, respectively. The lead portions 154b and 155b of the first circuit conductor 154 and the second circuit conductor 155 are integrally formed with the first terminal 110, the second terminal 120, and the output terminal 130. In the sealing body 100 of Embodiment 2, since it is housed in a housing 170 having a first heat sink 171 and a second heat sink 172, the first heat sink conductor 158 and the second heat sink conductor 159 are omitted. The first circuit conductor 154 and the second circuit conductor 155 are formed such that surfaces 154a and 155a, opposite to the surfaces that bond with the first semiconductor element 151 and the second semiconductor element 152, are exposed from the resin material 101.

[0103] In the sealing body 100 of Embodiment 2, a first insulating layer 156 and a second insulating layer 157 are disposed on the surfaces 154a and 155a of the first circuit conductor 154 and the second circuit conductor 155 exposed from the resin material 101. The sealing body 100 is housed in the housing 170 with the first insulating layer 156 and the second insulating layer 157 disposed on the surfaces 154a and 155a of the first circuit conductor 154 and the second circuit conductor 155 exposed from the resin material 101. That is, the first insulating layer 156 and the second insulating layer 157 of Embodiment 2 are subsequently attached to the sealing body 100. Then, pressure is applied to the sealing body 100 and the first insulating layer 156 and the second insulating layer 157 housed in the housing 170 by the first heat sink 171 and the second heat sink 172 of the housing 170. Thus, the first insulating layer 156 and the second insulating layer 157 are respectively bonded to surfaces 154a and 155a exposed from the resin material 101 of the sealing body 100, and are also bonded to the first insulating layer 156 and the second insulating layer 157. The housing 170, which contains the sealing body 100 and the first insulating layer 156 and the second insulating layer 157, is filled with resin material 102 through potting.

[0104] In Embodiment 2, the control terminal 140 has a fourth covering portion 141 that protrudes from the sealing body 100 and extends in a predetermined direction and is covered by an insulating material, and a fourth exposed portion 142 that protrudes from the fourth covering portion 141 and extends in a predetermined direction and is exposed outside the sealing body 100. The insulating material forming the fourth covering portion 141 may be made of the same material as the resin material 101, or it may be made of a different resin material than the resin material 101. The control terminals 140 are respectively provided at both ends of the side portion 100b of the sealing body 100.

[0105] exist Figure 9In the example, semiconductor device 1 has a control terminal 140, a first group of first terminals 110, a first group of second terminals 120, a second group of first terminals 110, a second group of second terminals 120, an output terminal 130, and another control terminal 140 arranged sequentially in the -y-axis direction. In semiconductor device 1 of embodiment 2, a second covering portion 121 is disposed on the second terminal 120 adjacent to the first exposed portion 112 of the first terminal 110 in the direction along the interval between the first terminal 110 and the second terminal 120, and a fourth covering portion 141 is disposed on the control terminal 140 adjacent to the first exposed portion 112 of the first terminal 110. In semiconductor device 1 of embodiment 2, a second covering portion 121 is disposed on the second terminal 120 adjacent to the output terminal 130 in the direction along the interval between the first terminal 110 and the second terminal 120, and a fourth covering portion 141 is disposed on the control terminal 140 adjacent to the output terminal 130.

[0106] In the semiconductor device 1 of Embodiment 2, such as Figure 9 As shown, similar to Embodiment 1, distance D2 is longer than distance D1. In the semiconductor device 1 of Embodiment 2, similar to Embodiment 1, a second covering portion 121 is disposed on the second terminal 120 adjacent to the first exposed portion 112 of the first terminal 110 in the direction along the interval between the first terminal 110 and the second terminal 120. Thus, in the semiconductor device 1 of Embodiment 2, similar to Embodiment 1, it is possible to achieve miniaturization of the device, improved insulation performance and reliability, and reduced composite inductance.

[0107] Figure 11 This is a top view of busbar 2 in embodiment 2. Figure 12 From Figure 11 The direction of arrow E is shown in the side view of busbar 2. Figure 13 It is along Figure 11 The diagram shows a cross-sectional view of the FF line cutting through busbar 2.

[0108] like Figure 13 As shown, in Embodiment 2, the busbar 2 includes a molded body 200 in which a first conductor plate 251, an insulating layer 253, and a second conductor plate 252 are sequentially stacked, and resin molding is performed using resin material 201 through injection molding or the like. The molded body 200 has a main surface 200a along the first conductor plate 251 and the second conductor plate 252. The molded body 200 is configured in a posture where the direction along the main surface 200a intersects with a predetermined direction and a specific direction.

[0109] like Figure 11As shown, the molded body 200 is formed on its upper surface 200c, which serves as a main surface 200a, such that the second conductor plate 252 exposes from the resin material 201. The upper surface 252a of the second conductor plate 252 exposed from the resin material 201 is covered with a resin different from the resin material 201 by potting or the like. The upper surface 200c of the molded body 200 is closer to the main surface 200a of the second conductor plate 252 connected to the second busbar terminal 220 than the first conductor plate 251 connected to the first busbar terminal 210. In other words, the upper surface 200c of the molded body 200 is further away from the main surface 200a of the first conductor plate 251 connected to the first busbar terminal 210 relative to the second conductor plate 252 connected to the second busbar terminal 220.

[0110] like Figure 12 and Figure 13 As shown, in Embodiment 2, the first busbar terminal 210 extends from the side portion 200b of the molded body 200 in a direction perpendicular to the direction along the first conductor plate 251 and the second conductor plate 252, protruding beyond a main surface 200a, i.e., the upper surface 200c, of the molded body 200. That is, the first busbar terminal 210 protrudes from the side portion 200b of the molded body 200 beyond the upper surface 200c, and the side portion 200b of the molded body 200 intersects the direction along the main surface 200a, i.e., the upper surface 200c, of the molded body 200. The upper surface 200c is the main surface 200a of the second conductor plate 252, which is closer to the first conductor plate 251 than the first conductor plate 251. The specific direction of the protrusion direction of the first busbar terminal 210 is perpendicular to the direction along the upper surface 200c of the first conductor plate 251 and the second conductor plate 252. The protrusion direction of the first busbar terminal 210 is from the first conductor plate 251 toward the second conductor plate 252. Figure 13 In the example, the protruding direction of the first terminal 210 of the busbar is the +x axis direction.

[0111] The busbar first terminal 210 has a busbar first exposed portion 212 extending along a specific direction and exposed outside the molded body 200, but it may also lack a busbar first covering portion 211. That is, the busbar first terminal 210 of Embodiment 2 may also be composed only of the busbar first exposed portion 212. The top end portion 212a of the busbar first exposed portion 212 corresponds to the top end portion of the busbar first terminal 210 and protrudes beyond one main surface 200a, i.e., the upper surface 200c, of the molded body 200. The upper surface 200c, which is one main surface 200a of the molded body 200, is closer to the top end portion 212a of the busbar first exposed portion 212 than the other main surface 200a.

[0112] like Figure 12 and Figure 13As shown, in Embodiment 2, the second busbar terminal 220 protrudes from the upper surface 200c of the molded body 200, located near the side portion 200b where the first busbar terminal 210 is located, in the same direction as the first busbar terminal 210. The second busbar terminal 220 has: a second busbar cover portion 221, which protrudes from the upper surface 200c of the molded body 200 and extends in a specific direction, and is covered by an insulating cover material; and a second busbar exposed portion 222, which protrudes from the second busbar cover portion 221 and extends in a specific direction, and is exposed outside the molded body 200.

[0113] The second busbar cover 221 protrudes beyond the top end 212a of the first exposed busbar portion 212 from the upper surface 200c in a direction separating from the upper surface 200c. The upper surface 200c is a main surface 200a that is exceeded by the first exposed busbar portion 212. Figure 13 In the example, the second busbar cover 221 extends from the upper surface 200c along the direction in which the first exposed busbar portion 212 extends, i.e., in a specific direction, toward the same direction as the protrusion of the first exposed busbar portion 212, and protrudes beyond the top end portion 212a of the first exposed busbar portion 212. Figure 13 In the example, the first exposed part 212 of the busbar protrudes in the direction of the +x axis.

[0114] The second exposed portion 222 of the busbar has a bent portion 223, which bends from the top end portion 221a of the second cover portion 221 of the busbar along the upper surface 200c toward the side portion 200b where the first terminal 210 of the busbar is located. Figure 13 In the example, the direction toward the side portion 200b is the -z axis direction. Furthermore, the second exposed portion 222 of the busbar protrudes from the top end 223a of the curved portion 223 in a direction away from the top end 212a of the first exposed portion 212 of the busbar. Figure 13 In the example, the second exposed portion 222 of the busbar protrudes from the top end portion 223a of the curved portion 223 along the extension direction of the first exposed portion 212 of the busbar, i.e., a specific direction, in the same direction as the protruding direction of the first exposed portion 212 of the busbar.

[0115] In busbar 2 of implementation method 2, as Figure 12 and Figure 13 As shown, similar to busbar 2 in Embodiment 1, distance L2 is longer than distance L1. In busbar 2 of Embodiment 2, similar to Embodiment 1, a second busbar cover 221 is disposed on the second busbar terminal 220 adjacent to the first exposed portion 212 of the first busbar terminal 210 in the direction of the interval between the first busbar terminal 210 and the second busbar terminal 220. Therefore, in busbar 2 of Embodiment 2, similar to Embodiment 1, miniaturization of the device, improved insulation performance and reliability, and reduced combined inductance can be achieved.

[0116] Furthermore, in the busbar 2 of Embodiment 2, the busbar first exposed portion 212 of the busbar first terminal 210 protrudes from the molded body 200 beyond the upper surface 200c, which is closer to the main surface 200a of the second conductor plate 252 relative to the first conductor plate 251. The busbar second covered portion 221 of the busbar second terminal 220 protrudes beyond the top end portion 212a of the busbar first exposed portion 212 from the upper surface 200c that is exceeded by the busbar first exposed portion 212, moving away from the upper surface 200c. The busbar second exposed portion 222 of the busbar second terminal 220 has a bent portion 223, which bends from the top end portion 221a of the busbar second covered portion 221 toward the side portion 200b, and the busbar second exposed portion 222 protrudes from the top end portion 223a of the bent portion 223 in a direction away from the top end portion 212a of the busbar first exposed portion 212. Therefore, in the busbar 2 of Embodiment 2, compared to the case where the first exposed portion 212 of the busbar protrudes from the molded body 200 beyond the main surface 200a of the first conductor plate 251, the length of the second covering portion 221 of the busbar can be shortened. In the busbar 2, the length of the second covering portion 221 is not made excessive, ensuring the necessary spatial distance P and creepage distance Q, and reducing the self-inductance of the second terminal 220 of the busbar. The busbar 2 can reduce the overall combined inductance between the semiconductor device 1 constituting the power conversion device 3 and the busbar 2.

[0117] Figure 14 This is a cross-sectional view of the power conversion device 3 in Embodiment 2. Figure 14 Show Figure 10 The semiconductor device 1 of Embodiment 2 shown and Figure 13 The state of busbar 2 connection in Embodiment 2 shown.

[0118] In the power conversion device 3 of embodiment 2, such as Figure 14 As shown, the semiconductor device 1 and the busbar 2 are configured such that the protruding directions (i.e., the predetermined directions) of the first terminal 110 and the second terminal 120 are the same as the protruding directions (i.e., the specific directions) of the first terminal 210 and the second terminal 220 of the busbar. In the power conversion device 3, the semiconductor device 1 and the busbar 2 are configured such that the first terminal 110 is opposite to the first terminal 210 of the busbar, and the second terminal 120 is opposite to the second terminal 220 of the busbar. Furthermore, in the power conversion device 3, the semiconductor device 1 and the busbar 2 are configured such that the protruding directions (+x-axis direction) of the first terminal 110 and the second terminal 120 are the same as the protruding directions (+x-axis direction) of the first terminal 210 and the second terminal 220 of the busbar. That is, in the power conversion device 3 of Embodiment 2, the semiconductor device 1 and the busbar 2 are configured such that the direction along the main surface 200a of the molded body 200 intersects with the predetermined direction and the specific direction. Figure 14 In the example, in the power conversion device 3, the semiconductor device 1 and the busbar 2 are configured in a position perpendicular to a predetermined direction and a specific direction along the direction of the main surface 200a of the molded body 200. Furthermore, in the power conversion device 3, the semiconductor device 1 and the busbar 2 are configured such that the second conductor plate 252 is located above the first conductor plate 251. That is, the semiconductor device 1 and the busbar 2 are configured such that the second conductor plate 252 is further away from the seal 100 along the predetermined direction and the specific direction compared to the first conductor plate 251.

[0119] Furthermore, in the power conversion device 3, the first exposed portion 112 of the first terminal 110 of the semiconductor device 1 and the bus 2 is connected to the first exposed portion 212 of the bus first terminal 210, and the second exposed portion 122 of the second terminal 120 is connected to the second exposed portion 222 of the bus second terminal 220. Specifically, in Figure 14 In the example, in the power conversion device 3, the first exposed part 112 and the first exposed part 212 of the busbar are made to coincide in the z-axis direction, and the second exposed part 122 and the second exposed part 222 of the busbar are made to coincide in the z-axis direction, and the overlapping parts are connected by welding or the like.

[0120] In the power conversion device 3 of Embodiment 2, similarly to Embodiment 1, distance D2 is longer than distance D1, and distance L2 is longer than distance L1. In the power conversion device 3 of Embodiment 2, similarly to Embodiment 1, an insulating cover is provided in the portion forming the shortest distance between adjacent first terminals 110 and bus first terminals 210, and between second terminals 120 and bus second terminals 220. Therefore, in the power conversion device 3 of Embodiment 2, similarly to Embodiment 1, miniaturization of the device, improved insulation performance and reliability, and reduced combined inductance can be achieved.

[0121] Furthermore, in the power conversion device 3 of Embodiment 2, the semiconductor device 1 and the bus 2 are configured such that the first terminal 110 faces the first terminal 210 of the bus, and the second terminal 120 faces the second terminal 220 of the bus. Additionally, in the power conversion device 3, the orientation of the first terminal 110 and the second terminal 120 is the same as the orientation of the first terminal 210 and the second terminal 220 of the bus. Therefore, in the power conversion device 3, even when the direction along the main surface 200a of the molded body 200 intersects with a predetermined direction and a specific direction, the semiconductor device 1 and the bus 2 can be connected, ensuring the spatial distance P and creepage distance Q, achieving miniaturization, and reducing the combined inductance.

[0122] Furthermore, in the power conversion device 3 of Embodiment 2, the busbar first exposed portion 212 of the busbar first terminal 210 protrudes from the molded body 200 beyond the upper surface 200c, and the upper surface 200c is closer to the main surface 200a of the second conductor plate 252 relative to the first conductor plate 251. In the power conversion device 3, the busbar second covered portion 221 of the busbar second terminal 220 protrudes beyond the top end portion 212a of the busbar first exposed portion 212 in a direction away from the upper surface 200c, beyond the upper surface 200c. In the power conversion device 3, the second exposed portion 222 of the busbar second terminal 220 has a bent portion 223, which bends from the top end portion 221a of the second covered portion 221 of the busbar towards the side portion 200b, and the second exposed portion 222 of the busbar protrudes from the top end portion 223a of the bent portion 223 in a direction away from the top end portion 212a of the first exposed portion 212 of the busbar.

[0123] Therefore, compared to the case where the first exposed portion 212 of the busbar protrudes beyond the main surface 200a of the first conductor plate 251 and extends from the molded body 200, the power conversion device 3 of Embodiment 2 can shorten the length of the second cover portion 221 of the busbar. The power conversion device 3 can reduce the self-inductance of the second terminal 220 of the busbar and reduce the overall combined inductance of the power conversion device 3. Furthermore, in the power conversion device 3, the first terminal 210 and the second terminal 220 of the busbar protrude above the upper surface 200c of the molded body 200. That is, the first terminal 210 and the second terminal 220 of the busbar protrude away from the sealant 100 relative to the upper surface 200c of the molded body 200. The connection portion between the first terminal 110 and the first terminal 210 of the busbar, and the connection portion between the second terminal 120 and the second terminal 220 of the busbar, are arranged on the side away from the sealant 100 relative to the upper surface 200c of the molded body 200. Therefore, the power conversion device 3 can easily perform the connection operation between the semiconductor device 1 and the busbar 2.

[0124] [other]

[0125] Furthermore, the present invention is not limited to the above-described embodiments, but also includes various modifications.

[0126] For example, the above embodiments are described in detail for the purpose of easily understanding the present invention, and are not necessarily limited to having all the described configurations. Furthermore, a portion of the configuration of one embodiment may be replaced with the configuration of another embodiment, and the configuration of another embodiment may be added to the configuration of one embodiment. Additionally, for a portion of the configuration of each embodiment, other configurations may be added, deleted, or replaced.

[0127] Furthermore, the aforementioned components, functions, processing units, and processing modules can also be implemented in hardware, for example, by designing some or all of them using integrated circuits. Alternatively, the aforementioned components and functions can be implemented in software by a processor interpreting and executing programs that perform their respective functions. The programs implementing these functions, magnetic tapes, files, and other information can be stored in recording devices such as memory, hard disks, SSDs (solid-state drives), or recording media such as IC cards, SD cards, and DVDs.

[0128] Furthermore, while control lines and information lines are shown as necessary in the description, not all control lines and information lines may be shown on the product. In fact, it can be assumed that almost all components are interconnected.

[0129] Symbol Explanation

[0130] 1…Semiconductor device 2…Bus

[0131] 3…Power conversion device 100…Sealed body

[0132] 110…First terminal 112…First exposed portion

[0133] 112a…Top part 120…Second terminal

[0134] 121…Second Cover (Cover) 121a…Top Part

[0135] 122……Second exposed part 122a…Top part

[0136] 151…First semiconductor element 152…Second semiconductor element

[0137] 200…formed body 200a…main surface

[0138] 200b…side section 200c…top surface

[0139] 210… First busbar terminal 212… First exposed portion of busbar

[0140] 212a…Top part 220…Second terminal of busbar

[0141] 221… Second busbar cover (busbar cover)

[0142] 221a…Top part 222…Second exposed part of the busbar

[0143] 222a…top part 223…bend part

[0144] 223a…Top part 251…First conductor plate

[0145] 252…Second conductor plate 253…Insulation layer.

Claims

1. A power conversion device comprising a semiconductor device and a busbar connected to said semiconductor device, characterized in that, The semiconductor device includes: A sealant in which semiconductor components are sealed with resin; A first terminal, which is connected to the semiconductor element, protrudes from the sealing body along a predetermined direction; as well as The second terminal, which is connected to the semiconductor element, is spaced apart from and adjacent to the first terminal, and protrudes from the sealing body in the same direction as the first terminal along the predetermined direction. The first terminal has a first exposed portion that extends in the predetermined direction and protrudes outside the sealing body. The second terminal has a cover portion that protrudes from the sealing body and extends in the predetermined direction and is covered by an insulating material; and a second exposed portion that protrudes from the cover portion and extends in the prescribed direction and is exposed outside the seal. The distance from the top of the cover portion to the seal along the predetermined direction is longer than the distance from the top of the first exposed portion to the seal along the predetermined direction. The busbar has the following features: A molded body in which the first conductor plate and the second conductor plate are formed by resin; A first busbar terminal, which is connected to the first conductor plate, protrudes from the shaped body along a specific direction; and; The second busbar terminal, connected to the second conductor plate and spaced apart from the first busbar terminal, protrudes from the shaped body along the specific direction in the same direction as the first busbar terminal. The first terminal of the busbar has a first exposed portion of the busbar extending in the specific direction and exposed outside the shaped body. The second busbar terminal has: a busbar cover portion that protrudes from the molded body and extends in the specific direction and is covered by an insulating cover material; and a second exposed busbar portion that protrudes from the busbar cover portion and extends in the specific direction and is exposed outside the molded body. The distance from the top of the busbar cover to the molded body along the specific direction is longer than the distance from the top of the first exposed part of the busbar to the molded body along the specific direction.

2. The power conversion device according to claim 1, characterized in that, In the semiconductor device and the busbar, The specified direction and the specific direction are the same direction. The semiconductor device and the busbar are configured such that the first terminal is opposite to the second terminal of the busbar, the second terminal is opposite to the first terminal of the busbar, and the orientation of the first terminal and the second terminal is opposite to the orientation of the first terminal and the second terminal of the busbar. The first exposed portion is connected to the second exposed portion of the busbar, and the second exposed portion is connected to the first exposed portion of the busbar.

3. The power conversion device according to claim 2, characterized in that, In the semiconductor device and the busbar, The sum of the distance from the top of the first exposed portion to the seal along the predetermined direction and the distance from the top of the second exposed portion of the busbar to the molded body along the specific direction is equal to the sum of the distance from the top of the second exposed portion to the seal along the predetermined direction and the distance from the top of the first exposed portion of the busbar to the molded body along the specific direction.

4. The power conversion device according to claim 1, characterized in that, In the semiconductor device and the busbar, The specified direction and the specific direction are the same direction. The semiconductor device and the busbar are configured such that the first terminal and the first terminal of the busbar are opposite each other, the second terminal and the second terminal of the busbar are opposite each other, and the orientation of the first terminal and the second terminal is the same as the orientation of the first terminal and the second terminal of the busbar. The first exposed portion is connected to the first exposed portion of the busbar, and the second exposed portion is connected to the second exposed portion of the busbar.

5. The power conversion device according to claim 4, characterized in that, In the shaped body, The first conductor plate and the second conductor plate are arranged opposite each other with an insulating layer between them. The shaped body has a main surface along the first conductor plate and the second conductor plate, and is configured in a posture that intersects the predetermined direction and the specific direction along the direction of the main surface. In the first terminal of the busbar, The first exposed portion of the busbar protrudes beyond the main surface from the side portion of the molded body, the side portion of the molded body intersects the direction along the main surface, and the main surface is closer to the second conductor plate relative to the first conductor plate. In the second terminal of the busbar, The busbar cover protrudes beyond the top end of the first exposed portion of the busbar from the main surface that is exceeded by the first exposed portion of the busbar, in a direction away from the main surface. The second exposed portion of the busbar has a curved portion that bends from the top end of the busbar cover portion along the direction of the main surface towards the side portion, and the second exposed portion of the busbar protrudes from the top end of the curved portion in a direction away from the top end of the first exposed portion of the busbar.

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