Substrate processing apparatus and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a process chamber in which an inner space for processing a substrate is formed, an ion blocker for dividing the inner space into a plasma generation space and a processing space, a substrate support unit for supporting the substrate in the processing space, an exhaust unit for exhausting the processing space, an annealing source positioned above the ion blocker and transmitting energy for annealing to the substrate through the ion blocker, and a gas supply unit for supplying a process gas to the plasma generation space, wherein the ion blocker includes a body shaped like a disk, made of a microwave-transmittable material, and formed with a plurality of through-holes, and a transparent conductive oxide film provided on at least one of an upper surface and a lower surface of the body in a thickness of a first thickness or less.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0078399, filed with the Korean Intellectual Property Office on June 17, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] Plasma can be used in substrate processing. For example, plasma can be used in etching, deposition, or dry cleaning processes. Plasma is generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields (RF electromagnetic fields), and plasma refers to an ionized gaseous state composed of ions, electrons, and radicals. When the ion or radical particles contained in the plasma collide with the substrate, a dry cleaning, ashing, or etching process using plasma is performed. In these processes, the dry cleaning process is used to remove the natural oxide film formed on the substrate, and the film to be removed is very thin compared to the etching process. Therefore, when the substrate is treated with plasma containing a large number of radicals, ions, and electrons, not only the natural oxide film to be removed from the substrate is damaged due to the high etching rate of the film, but also the film underneath. To prevent this problem, Korean Patent Application Publication No. 10-2011-0057510 discloses an apparatus for processing substrates, which processes the substrate by using a grounded ion barrier and by using plasma that mainly contains only radicals that do not contain electrons and ions.

[0005] Furthermore, in order to manufacture semiconductor devices, semiconductor wafers are subjected to various heat treatments (e.g., reforming treatment and annealing treatment). Moreover, as semiconductor devices become denser, more multilayered, and more integrated, their specifications become increasingly complex each year, necessitating improvements in the uniformity and film quality within the surface of semiconductor wafers subjected to various heat treatments.

[0006] In the manufacturing process of semiconductor equipment, there is an operation involving the movement between a plasma-using device and an annealing device, and the UPH is affected by the movement time between the devices. Summary of the Invention

[0007] This invention aims to provide a substrate processing apparatus that can effectively process substrates.

[0008] The present invention also aims to provide a substrate processing apparatus that can improve UPH per unit time.

[0009] This invention aims to provide a substrate processing apparatus that can reduce the floor space required for equipment.

[0010] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art will clearly understand from the specification and drawings any problems not mentioned.

[0011] An exemplary embodiment of the present invention provides a substrate processing apparatus, comprising: a process chamber having an internal space for processing a substrate; an ion barrier for dividing the internal space into a plasma generation space and a processing space; a substrate support unit for supporting the substrate in the processing space; an emission unit for discharging energy from the processing space; an annealing source positioned above the ion barrier and transmitting energy for annealing to the substrate through the ion barrier; and a gas supply unit for supplying process gas to the plasma generation space, wherein the ion barrier comprises: a body shaped like a disk, made of a microwave-transmissible material, and having a plurality of through holes; and a transparent conductive oxide film disposed on at least one of the upper and lower surfaces of the body with a first thickness or less.

[0012] In an exemplary embodiment, the transparent conductive oxide film may be formed from one or more of the following, any one of them, or a mixture thereof, or by multiple overlaps of the following: AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphite, metal nanowires, and CNTs.

[0013] In an exemplary embodiment, the ion blocker may be grounded.

[0014] In an exemplary embodiment, the body may be made of quartz material.

[0015] In an exemplary embodiment, the annealing source may include: an antenna unit including an antenna disposed on one side of the plasma generation space; a transmission plate positioned between the antenna and the plasma generation space; and a microwave application unit for applying a set microwave to the antenna unit.

[0016] In an exemplary embodiment, the annealing source may be a lamp or optical system used to deliver the laser.

[0017] In an exemplary embodiment, the substrate processing apparatus may further include: a plasma source for applying energy to a plasma production space for exciting process gases already applied to the plasma generation space into plasma; and a controller, wherein when a substrate is loaded into the processing space and the atmosphere of the processing space is changed to a first atmosphere, the controller may control a gas supply unit and a plasma source to perform a first process by exciting process gases into plasma in the plasma generation space.

[0018] In an exemplary embodiment, the substrate processing apparatus may further include a controller, wherein the controller may block the supply of process gas from the gas supply unit while the substrate is continuously supported in the substrate support unit, and apply energy for annealing the substrate by controlling the annealing source.

[0019] In an exemplary embodiment, the energy used for annealing may be a first microwave.

[0020] In an exemplary embodiment, when the transparent conductive oxide film is made of indium tin oxide (ITO) material, the first thickness can be 1 μm.

[0021] Another exemplary embodiment of the present invention provides a substrate processing method comprising: a first process that excites a process gas into plasma and processes the substrate with groups that have passed through an ion barrier, the ion barrier blocking ions in the plasma; and a second process that applies a first energy that has been transmitted through the ion barrier to the substrate, wherein the ion barrier is made of a material that is permeable to light, heat and microwaves.

[0022] In an exemplary embodiment, the first and second processes can be performed in a chamber.

[0023] In an exemplary embodiment, the ion blocker may be grounded.

[0024] In an exemplary embodiment, the ion blocker may include: a body shaped like a disk and made of a material through which light, heat and microwaves can pass; and a transparent conductive oxide film coated on at least one of the upper and lower surfaces of the body at a first thickness or less.

[0025] In an exemplary embodiment, the transparent conductive oxide film may be formed from one or more of the following, any one of them, or a mixture thereof, or formed by multiple overlaps of the following: AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphite, metal nanowires, and CNTs.

[0026] In an exemplary embodiment, when the transparent conductive oxide film is made of indium tin oxide (ITO) material, the first thickness can be 1 μm.

[0027] In an exemplary embodiment, the application of the first energy can be performed while the supply of process gas is blocked.

[0028] In an exemplary embodiment, the first energy can be used to anneal the substrate.

[0029] In an exemplary embodiment, the body may be made of quartz material.

[0030] Another exemplary embodiment of the present invention provides a substrate processing apparatus, the substrate processing apparatus comprising: a process chamber having an internal space for processing a substrate formed therein; an ion barrier shaped like a disk, having a plurality of through holes, being grounded, and dividing the internal space into a plasma generation space and a processing space; a substrate support unit for supporting the substrate in the processing space; an emission unit for discharging from the processing space; and an antenna unit including an antenna plate and a transmission plate, the antenna plate being disposed above the ion barrier. The transmission plate is positioned below the antenna plate; a microwave application unit is used to apply a set microwave to the antenna element; and a gas supply unit is used to supply process gas to the plasma generation space, wherein the ion blocker includes: a body made of quartz material; and a transparent conductive oxide film formed from one or more of the following, any one or a mixture thereof, or formed by multiple overlaps of the following: AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphite, metal nanowires and CNTs.

[0031] According to an exemplary embodiment of the present invention, the substrate can be processed effectively.

[0032] According to an exemplary embodiment of the present invention, when manufacturing a semiconductor device on a substrate, the output per unit time (UPH) can be increased.

[0033] According to an exemplary embodiment of the present invention, the footprint of the equipment can be reduced.

[0034] The effects of the present invention are not limited to those described above, and those skilled in the art will clearly understand from the specification and drawings any effects not mentioned. Attached Figure Description

[0035] Figure 1A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (first exemplary embodiment) of the present invention is shown.

[0036] Figure 2 This is a cross-sectional view showing the operation of a substrate processing apparatus performing plasma processing according to an exemplary embodiment (first exemplary embodiment) of the present invention.

[0037] Figure 3 This is a cross-sectional view showing the operation of a substrate processing apparatus performing an annealing process according to an exemplary embodiment (first exemplary embodiment) of the present invention.

[0038] Figure 4 An enlarged view showing a portion of an ion blocker 530 according to an exemplary embodiment of the present invention.

[0039] Figure 5 A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (second exemplary embodiment) of the present invention is shown.

[0040] Figure 6 This is a cross-sectional view showing the operation of a substrate processing apparatus performing plasma processing according to an exemplary embodiment (second exemplary embodiment) of the present invention.

[0041] Figure 7 This is a cross-sectional view showing the operation of a substrate processing apparatus performing an annealing process according to an exemplary embodiment (second exemplary embodiment) of the present invention.

[0042] Figure 8 A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (third exemplary embodiment) of the present invention is shown.

[0043] Figure 9 A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (fourth exemplary embodiment) of the present invention is shown.

[0044] Figure 10 A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (fifth exemplary embodiment) of the present invention is shown. Detailed Implementation

[0045] Hereinafter, exemplary embodiments of the invention will be described more fully with reference to the accompanying drawings, which illustrate exemplary embodiments of the invention. However, the invention can be implemented differently and is not limited to the following embodiments. Furthermore, in describing exemplary embodiments of the invention in detail, detailed descriptions of relevant well-known functions or configurations will be omitted if it is determined that such detailed descriptions would unnecessarily obscure the essential points of the invention. Additionally, throughout the drawings, the same reference numerals are used for components having similar functions and effects.

[0046] Unless explicitly stated otherwise, the word "comprise" and variations such as "comprises" or "comprising" shall be understood to imply the inclusion of the stated element but not the exclusion of any other element. It should be understood that the terms "comprise" and "having" are intended to indicate the presence of the features, quantities, steps, operations, constituent elements and components, or combinations thereof, described in the specification, and do not exclude the prior presence or addition of one or more other features, quantities, steps, operations, constituent elements and components, or combinations thereof.

[0047] The singular expressions used in this article include plural expressions unless they have a clearly contradictory meaning in the context. Therefore, the shape, size, etc. of the elements in the figure may be exaggerated for the sake of clarity.

[0048] The use of "and / or" includes references to each item and all combinations including one or more items. Furthermore, in this specification, "connection" refers not only to the direct connection between component A and component B, but also to the indirect connection between component A and component B by inserting component C between them.

[0049] The exemplary embodiments of the present invention can be modified in many ways, and the scope of the invention should not be construed as limited to the following exemplary embodiments. The exemplary embodiments are provided to explain the invention more fully to those skilled in the art. Therefore, the shapes of the elements in the drawings are exaggerated for clearer description.

[0050] Figure 1 A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes. (Refer to...) Figure 1 The substrate processing apparatus 10 includes a process chamber 100, a substrate support unit 200, a microwave application unit 400, a controller 600, and an exhaust baffle 700.

[0051] The process chamber 100 is provided with a processing space 102 in which a substrate is processed. The process chamber 100 is cylindrical in shape. The process chamber 100 is made of a metallic material. For example, the process chamber 100 may be made of aluminum. An opening 130 is formed in one side wall of the process chamber 100. The opening 130 serves as an inlet 130 through which the substrate W can be loaded and unloaded. The inlet 130 can be opened and closed by a door 140. A discharge port 150 is mounted on the bottom surface of the process chamber 100. The discharge port 150 is positioned to coincide with the central axis of the process chamber 100. The discharge port 150 serves as a discharge port 150 through which byproducts generated in the processing space 102 are discharged to the outside of the process chamber 100.

[0052] The substrate support unit 200 supports the substrate W in the processing space. The substrate support unit 200 may be configured as an electrostatic chuck (ESC) for supporting the substrate W by using electrostatic force. Alternatively, the substrate support unit 200 may support the substrate W in various ways (e.g., mechanical clamping).

[0053] The support unit 200 is described as an example of an electrostatic chuck (ESC). The support unit 200 includes a dielectric plate 210, a focusing ring 252, an edge ring 254, and a lower electrode 230. A substrate W is placed directly on the upper surface of the dielectric plate 210. The dielectric plate 210 is configured in a disk shape. The dielectric plate 210 may have a radius smaller than the radius of the substrate W. A clamping electrode 212 is mounted inside the dielectric plate 210. A power source (not shown) is connected to the clamping electrode 212, and the clamping electrode receives a voltage from the power source (not shown). The clamping electrode 212 provides an electrostatic force, causing the substrate W to be attracted to the dielectric plate 210 by the applied voltage. A heater 214 for heating the substrate W is mounted inside the dielectric plate 210. The heater 214 may be positioned below the clamping electrode 212. The heater 214 may be configured as a spiral coil. For example, the dielectric plate 210 may be made of a ceramic material.

[0054] The lower electrode 230 supports the dielectric plate 210. The lower electrode 230 is positioned below and fixedly coupled to the dielectric plate 210. The upper surface of the lower electrode 230 has a stepped shape, such that the central region of the lower electrode is higher than the edge region. The central region of the upper surface of the lower electrode 230 corresponds to the region of the lower surface of the dielectric plate 210. A cooling channel 232 is formed in the lower electrode 230. The cooling channel 232 is configured as a channel through which cooling fluid circulates. The cooling channel 232 may be spirally arranged within the lower electrode 230. The lower electrode 230 may be connected to an external high-frequency power supply or may be grounded. The high-frequency power supply may supply power to the lower electrode 230 and control the energy of ions injected onto the substrate. The lower electrode 230 may be made of a metallic material.

[0055] The focusing ring 252 concentrates plasma onto the substrate W. The focusing ring 252 is configured in an annular shape surrounding the dielectric plate 210. The focusing ring 252 is positioned at the edge region of the dielectric plate 210. For example, the focusing ring 252 can be made of a conductive material. The upper surface of the focusing ring 252 can be stepped. The height of the inner portion of the upper surface of the focusing ring 252 is set to be the same as the upper surface of the dielectric plate 210 to support the edge region of the lower surface of the substrate W.

[0056] The edge ring 254 is configured in an annular shape surrounding the focusing ring 252. The edge ring 254 is positioned adjacent to the focusing ring 252 in the edge region of the lower electrode 230. The upper surface of the edge ring 254 has a higher height than the upper surface of the focusing ring 252. The edge ring 254 may be provided with an insulating material.

[0057] The microwave application unit 400 is configured as an example of a plasma source, which applies microwaves to the reaction space 101 of the process chamber 100 to excite the gas in the reaction space 101 into plasma. The microwave application unit 400 can generate plasma by exciting process gas.

[0058] The microwave application unit 400 includes a microwave power supply 410, a waveguide 420, a microwave antenna 430, a dielectric plate 470, a cooling plate 480, and a transmission plate 490.

[0059] Microwave power supply 410 generates microwaves. Waveguide 420 is connected to microwave power supply 410 and provides a path for the transmission of microwaves generated in microwave power supply 410.

[0060] Microwave antenna 430 is positioned inside the front end of waveguide 420. Microwave antenna 430 applies microwaves transmitted through waveguide 420 to process chamber 100. For example, microwave antenna 430 may receive power applied by microwave power supply 410 and apply that power to reaction space 101. In one embodiment, the microwaves may be microwaves with a predetermined power and a frequency of 2.45 GHz. The power applied to microwave power supply 410 may range from several kilowatts to tens of kilowatts.

[0061] The microwave antenna 430 includes an antenna plate 431, an antenna mast 433, an external conductor 434, a microwave adapter 436, a connector 441, a cooling plate 443, and an antenna height adjustment unit 445.

[0062] The antenna plate 431 is configured as a thin disk and has multiple slots 432 formed therein. The slots 432 provide channels for microwaves to pass through. The slots 432 can be arranged in various shapes. The slots 432 can be arranged in shapes such as "×", "+", "-", etc. The slots 432 can be combined with each other and arranged in multiple ring shapes. These rings have the same center and different radii.

[0063] The antenna mast 433 is configured as a cylindrical rod. The antenna mast 433 is positioned such that its longitudinal direction is vertical. The antenna mast 433 is positioned above the antenna plate 431, and its lower end is inserted into and fixed to the center of the antenna plate 431. The antenna mast 433 propagates microwaves to the antenna plate 431.

[0064] The outer conductor 434 is located below the front end of the waveguide 420. The space connected to the interior space of the waveguide 420 is formed vertically inside the outer conductor 434. A portion of the antenna mast 433 is located inside the outer conductor 434.

[0065] Microwave adapter 436 is located inside the front end of waveguide 420. Microwave adapter 436 has a tapered shape with an upper radius larger than the lower radius. An accommodating space with an open bottom surface is formed at the lower end of microwave adapter 436.

[0066] Connector 441 is positioned within the receiving space. Connector 440 is configured in an annular shape. The outer surface of connector 441 has a radius corresponding to the inner surface of the receiving space. The outer surface of connector 441 contacts and is fixedly positioned with respect to the inner surface of the receiving space. Connector 441 may be made of a conductive material. The upper end of antenna mast 433 is located within the receiving space and incorporated into the internal region of connector 441. The upper end of antenna mast 433 is forcibly inserted into connector 441 and electrically connected to microwave adapter 436 via connector 441.

[0067] A cooling plate 443 is coupled to the upper end of the microwave adapter 436. The cooling plate 443 may be a plate with a radius larger than the radius of the upper end of the microwave adapter 436. The cooling plate 443 may be made of a material with superior thermal conductivity than that of the microwave adapter 436. The cooling plate 443 may be formed of copper (Cu) or aluminum (Al). The cooling plate 443 promotes cooling of the microwave adapter 436 to prevent thermal deformation of the microwave adapter 436.

[0068] Antenna height adjustment unit 445 connects microwave adapter 436 and antenna mast 433. Antenna height adjustment unit 445 then moves antenna mast 433, thereby changing the relative height of antenna plate 431 relative to microwave adapter 436. Antenna height adjustment unit 445 includes a bolt. Bolt 445 is inserted vertically into microwave adapter 436 from top to bottom, with the lower end of the bolt located within a receiving space. Bolt 445 is inserted into the central region of microwave adapter 436. The lower end of bolt 445 is inserted into the upper end of antenna mast 433. A threaded groove of predetermined length is formed at the upper end of antenna mast 433, and the lower end of bolt 445 is inserted into and secured in this threaded groove. Antenna mast 433 moves vertically according to the rotation of bolt 445. For example, when bolt 445 rotates clockwise, antenna mast 433 can move upward, and when bolt 445 rotates counterclockwise, antenna mast 433 can move downward. As the antenna mast 433 moves, the antenna plate 431 can move in the vertical direction.

[0069] A dielectric plate 470 is positioned on an antenna plate 431. The dielectric plate 470 is provided with a dielectric material, such as alumina or quartz. Microwaves propagating vertically from the microwave antenna 430 propagate radially through the dielectric plate 470. The microwaves propagating to the dielectric plate 470 have compressed wavelengths and are resonant. The resonant microwaves are transmitted through slots 432 in the antenna plate 431.

[0070] A cooling plate 480 is disposed on the dielectric plate 470. The cooling plate 480 cools the dielectric plate 470. The cooling plate 480 may be made of aluminum. The cooling plate 480 cools the dielectric plate 470 by allowing cooling fluid to flow through cooling channels (not shown) formed in the cooling plate. Cooling methods include water cooling and air cooling.

[0071] A transmission plate 490 is disposed below the antenna plate 431. The transmission plate 490 is provided with a dielectric material, such as alumina or quartz. Microwaves passing through the slots 432 of the antenna plate 431 are radiated into the process chamber 100 via the transmission plate 490. The process gas supplied to the process chamber 100 is excited into a plasma state by the electric field of the radiated microwaves. The upper surface of the transmission plate 490 may be spaced apart from the bottom surface of the antenna plate 431 at predetermined intervals.

[0072] The antenna height adjustment unit 445 can vertically move the antenna mast 433, thereby changing the relative height of the antenna plate 431 with respect to the microwave adapter 436. The antenna height adjustment unit 445 can vertically move the antenna mast 433 to maintain an appropriate distance between the antenna plate 431 and the transmission plate 490.

[0073] A plasma generation space 520 is formed between the transfer plate 490 and the ion barrier 530. The plasma generation space 520 is connected to a gas supply unit 300 that supplies process gases.

[0074] The gas supply unit 300 includes a gas supply pipe 310 and a valve component 311. The process gas supplied by the gas supply unit can be provided as a single-component gas or a mixture of two or more components.

[0075] The process gas introduced into the plasma generation space 520 is converted into a plasma state by microwaves. In the plasma state, the process gas decomposes into ions, electrons, and radicals. The plasma passes through the ion barrier 530 and moves into the processing space 102.

[0076] The ion blocker 530 is provided by coating a transparent conductive oxide (TCO) film onto a body 531. The TCO film 532 is provided with a first thickness or less. The first thickness is the thickness of the material to which microwaves can be transmitted. The first thickness varies depending on the material determined to be the TCO film 532. "To be transmitted" in this specification means that transmission is not significantly affected. For example, when the TCO film 532 is provided with ITO, the first thickness can be 1 μm. The ion blocker 530 can be provided in a plate-like manner. For example, the ion blocker 530 can have a flat plate shape. Figure 4 This is an enlarged view of a portion of an ion blocker 530 according to an exemplary embodiment of the present invention. (Refer to...) Figure 4The description is more detailed. The body 531 of the ion blocker 530 is provided with a microwave-transmitting material. Quartz can be provided as an embodiment of the body 531. A TCO film 532 can be provided by coating it onto the upper surface of the body 531. A TCO film 532 can be provided by coating it onto the lower surface of the body 531. A TCO film 532 can be provided by coating it onto both the upper and lower surfaces of the body 531. The TCO film 532 is provided with a thickness sufficient to transmit microwaves for heating the substrate W. In one embodiment, the TCO film 532 can be indium tin oxide (ITO). Furthermore, the TCO can be formed from any one or more mixtures of the following, or formed by multiple overlaps of the following: AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphite, metal nanowires, and CNTs. The ion blocker 530 is configured to be grounded. The ion blocker 530 prevents ions from passing through the ion blocker 530 and allows radicals to pass through. Furthermore, the TCO of the ion blocker 530 is provided with a thickness sufficient for microwave transmission. The microwaves applied by the microwave application unit 400 can pass through the ion barrier 530.

[0077] Multiple through-holes are formed in the ion barrier 530. The through-holes are formed in the vertical direction of the ion barrier 530. The bottom surface of the ion barrier 530 is exposed to the processing space. The ion barrier 530 is disposed between the plasma generation space 520 and the processing space 102, and forms the boundary between the plasma generation space 520 and the processing space 102. Plasma groups generated in the plasma generation space 520 pass through the through-holes of the ion barrier 530, and ions and electrons are blocked by the ion barrier 530 and cannot move to the processing space 102. The ion barrier 530 is positioned above the substrate support unit 200. The ion barrier 530 is positioned to face the dielectric plate 210. The plasma passing through the ion barrier 530 is uniformly supplied to the processing space 102 in the process chamber 100.

[0078] The discharge baffle 700 uniformly discharges plasma into each region of the processing space. The discharge baffle 700 is positioned within the processing space 102 between the inner wall of the process chamber 100 and the substrate support unit 200. The discharge baffle 700 is annular in shape. A plurality of through holes 702 are formed in the discharge baffle 700. The through holes 702 are arranged facing upwards and downwards. The through holes 702 are arranged along the circumferential direction of the discharge baffle 700. The through holes 702 have a slit shape and a longitudinal direction facing the radial direction of the discharge baffle 700.

[0079] The controller 600 can control the substrate processing apparatus. The controller 600 can control at least one of the pressure-reducing member 123, substrate support unit 200, gas supply unit 300, and microwave application unit 400 of the substrate processing apparatus, enabling the substrate processing apparatus to perform the substrate processing method described below. Further, the controller 600 may include: a process controller formed by a microprocessor (computer) that performs control of the substrate processing apparatus; a user interface formed by a keyboard through which an operator performs command input operations for managing the substrate processing apparatus; a display for visualizing and displaying the operation status of the substrate processing apparatus; and a storage unit storing control programs for executing processes performed in the substrate processing apparatus under the control of the process controller or various data, and programs (i.e., process plans) for executing processes for each configuration according to process conditions. Furthermore, the user interface and the storage unit can be connected to the process controller. The processing plan can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, a portable hard disk (e.g., CD-ROM or DVD), or a semiconductor memory (e.g., flash memory).

[0080] Figure 2 This is a cross-sectional view illustrating the operation of a substrate processing apparatus according to an exemplary embodiment of the present invention when performing plasma processing as a first process. This will be referenced... Figure 2 The process is described below. After the substrate W is loaded into the processing space 102 and placed on the support unit 200, the door 140 is closed. When the atmosphere in the processing space 102 is formed to the desired state, the process gas is supplied to the plasma generation space 520 by controlling the valve member 311 of the gas supply unit 300 to the open state. Furthermore, microwaves are applied to the process gas by controlling the microwave power supply 410 to be turned on, and the process gas is excited into plasma. The plasma radicals R are introduced into the processing space 102 through the through-hole of the ion barrier 530. Ions are blocked by the ion barrier 530 and cannot pass through the through-hole. The radicals R introduced into the processing space 102 process the substrate W.

[0081] Figure 3 This is a cross-sectional view illustrating the operation of a substrate processing apparatus according to an exemplary embodiment of the present invention when performing an annealing process as a second process. This will be referenced... Figure 3 The following description is provided. When the desired atmosphere is formed in the processing space 102, the microwave power supply 410 is turned on to transmit microwaves for annealing to the substrate W. The microwaves are transmitted to the substrate W through the ion barrier 530. The microwaves transmitted to the substrate are microwaves capable of annealing the substrate W. At this time, the valve member 311 of the gas supply unit 300 is controlled to be in the closed state.

[0082] Figure 5 This is a cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (second exemplary embodiment) of the present invention. This will be referenced... Figure 5 A description is provided. In the description of the second exemplary embodiment, the configuration identical to that of the first exemplary embodiment is replaced with the configuration described in the first exemplary embodiment. Figures 1 to 3 The description.

[0083] The plasma generation space 520 is defined by a cylindrical quartz chamber 630. An antenna 610 for generating a magnetic field in the plasma generation space 520 is wound around the outside of the plasma generation space 520. Taking antenna 610 as an example, a cylindrical antenna is provided. Antenna 610 is electrically connected to a power supply 640. When current from power supply 640 flows through antenna 610, an electric field is formed in the plasma generation space 520. The electric field applied from antenna 610 excites the process gas applied to the plasma generation space 620 into plasma. Antenna 610 and power supply 640 act as plasma sources.

[0084] Figure 6 This is a cross-sectional view illustrating the operation of a substrate processing apparatus performing plasma processing according to an exemplary embodiment (second exemplary embodiment) of the present invention. This will be referenced... Figure 6 The process is described below. After the substrate W is loaded into the processing space 102 and placed on the support unit 200, the door 140 is closed. When the atmosphere in the processing space 102 is formed to the desired state, the process gas is supplied to the plasma generation space 520 by controlling the valve member 311 of the gas supply unit 300 to the open state. Furthermore, the process gas is applied by controlling the power supply 640 applied to the antenna 610 to be turned on, and the process gas is excited into plasma. The plasma radicals R are introduced into the processing space 102 through the through-hole of the ion blocker 530. Ions are blocked by the ion blocker 530 and cannot pass through the through-hole. The radicals R introduced into the processing space 102 process the substrate W.

[0085] Figure 7 This is a cross-sectional view illustrating the operation of a substrate processing apparatus performing an annealing process according to an exemplary embodiment (second exemplary embodiment) of the present invention. This will be referenced... Figure 7 The following description is provided. When the desired atmosphere is formed in the processing space 102, the microwave power supply 410 is turned on to transmit microwaves for annealing to the substrate W. The microwaves are transmitted to the substrate W through the ion barrier 530. The microwaves transmitted to the substrate are microwaves capable of annealing the substrate W. At this time, the power supply 640 is turned off, and the valve component 311 of the gas supply unit 300 is controlled to be in the closed state.

[0086] Figure 8A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (third exemplary embodiment) of the present invention is shown. This will be referenced. Figure 8 The following description is provided. In the description of the third exemplary embodiment, the configuration identical to that of the second exemplary embodiment is replaced with the configuration described in the second exemplary embodiment. Figure 5 and Figure 6 The lamp 1410 is configured as a heat source for annealing the substrate W. The lamp 1410 may be a flash lamp. A reflector 1415 may also be included to reflect the light emitted by the lamp 1410 toward the substrate W.

[0087] In the substrate processing method according to the third exemplary embodiment, when the atmosphere in the processing space 102 is formed into a desired atmosphere, the valve member 311 of the gas supply unit 300 is controlled to be open to supply process gas to the plasma generation space 520. Furthermore, by controlling the power supply 640 applied to the antenna 610 to be turned on, a magnetic field is applied to the process gas, and the process gas is excited into plasma. The plasma radicals R are introduced into the processing space 102 through the through-hole of the ion barrier 530. Ions are blocked by the ion barrier 530 and cannot pass through the through-hole. The radicals R introduced into the processing space 102 process the substrate W.

[0088] When the treatment of the substrate W with the applied functional groups is completed, the power supply 640 is turned off, and the valve member 311 of the gas supply unit 300 is controlled to be in the closed state. When the desired atmosphere is formed in the processing space 102, the lamp 1410 is controlled to be turned on to transmit light energy for annealing to the substrate W. The light energy passes through the ion blocker 530 and is transmitted to the substrate W.

[0089] Figure 9 A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (fourth exemplary embodiment) of the present invention is shown. This will be referenced. Figure 9 The following description is provided. In the description of the fourth exemplary embodiment, the configuration identical to that of the third exemplary embodiment is replaced with the configuration described in the third exemplary embodiment. Figure 8 The laser optical system 2400 is configured as a heat source for annealing the substrate W. The laser optical system 2400 includes a laser generating device and an optical module for transmitting laser light emitted from the laser generating device to the substrate W. The optical module may be formed by a combination of multiple lenses.

[0090] In the substrate processing method according to the fourth exemplary embodiment, when the atmosphere in the processing space 102 is formed into a desired atmosphere, the valve member 311 of the gas supply unit 300 is controlled to be open to supply process gas to the plasma generation space 520. Furthermore, by controlling the power supply 640 applied to the antenna 610 to be turned on, a magnetic field is applied to the process gas, and the process gas is excited into plasma. The plasma radicals R are introduced into the processing space 102 through the through-hole of the ion barrier 530. Ions are blocked by the ion barrier 530 and cannot pass through the through-hole. The radicals R introduced into the processing space 102 process the substrate W.

[0091] When the treatment of the substrate W with the applied functional groups is completed, the power supply 640 is turned off, and the valve member 311 of the gas supply unit 300 is controlled to be in the closed state. When the desired atmosphere is formed in the processing space 102, the laser optical system 2400 is controlled to be turned on to transmit light energy for annealing to the substrate W. The light energy passes through the ion blocker 530 and is transmitted to the substrate W.

[0092] Figure 10 A cross-sectional view of a substrate processing apparatus according to an exemplary embodiment (fifth exemplary embodiment) of the present invention is shown. This will be referenced. Figure 10 The following description is provided. In the description of the fifth exemplary embodiment, the configuration identical to that of the third exemplary embodiment is replaced with the configuration described in the third exemplary embodiment. Figure 8 The description is as follows: The CCP (Capacitively Coupled Plasma) type is configured as a plasma source for exciting process gases into plasma. The upper electrode 2610 includes a transparent electrode and is configured to allow light, heat, and electromagnetic wave transmission. The transparent electrode constituting the upper electrode 2610 is configured under conditions similar to the ion barrier described above. High-frequency power generated by the high-frequency power supply 640 is applied to the transparent electrode.

[0093] In the substrate processing method according to the fifth exemplary embodiment, when the atmosphere in the processing space 102 is formed into a desired atmosphere, the valve member 311 of the gas supply unit 300 is controlled to be open to supply process gas to the plasma generation space 520. Furthermore, by controlling the power supply 640 applied to the upper electrode 2610 to be turned on, an electric field is applied to the process gas, and the process gas is excited into plasma. The plasma radicals R are introduced into the processing space 102 through the through-hole of the ion barrier 530. Ions are blocked by the ion barrier 530 and cannot pass through the through-hole. The radicals R introduced into the processing space 102 process the substrate W.

[0094] When the treatment of the substrate W with the applied functional groups is completed, the power supply 640 is turned off, and the valve member 311 of the gas supply unit 300 is controlled to be in the closed state. When the desired atmosphere is formed in the processing space 102, the lamp 1410 is controlled to be turned on to transmit light energy for annealing to the substrate W. The light energy passes through the ion blocker 530 and is transmitted to the substrate W.

[0095] According to the configuration of an exemplary embodiment of the present invention, group drying cleaning and annealing can be performed in a single process chamber 100. The substrate processing apparatus according to an exemplary embodiment of the present invention can be applied to isotropic ALE (t-ALE, isotropic atomic layer etching). The substrate processing apparatus according to an exemplary embodiment of the present invention reduces the equipment footprint because a separate annealing chamber is sufficient. Furthermore, since the operation of moving between the plasma-using apparatus and the annealing apparatus is not required, the movement time between apparatuses is eliminated, thereby increasing UPH (upper usage time).

[0096] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed in this specification, the scope equivalent to this disclosure, and / or the scope of technology or knowledge in the art. The foregoing exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in specific fields and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be interpreted to include other exemplary embodiments.

Claims

1. A substrate processing method, the substrate processing method comprising: A first process involves exciting a process gas into plasma and treating a substrate with groups that have passed through an ion barrier, the ion barrier blocking ions in the plasma. as well as The second process applies the first energy, which has already been transferred through the ion barrier, to the substrate. The ion blocker is made of a material through which light, heat, and microwaves can pass. The first process and the second process are performed in one chamber. The ion blocker includes: The body, shaped like a disk, is made of a material through which light, heat, and microwaves can pass. The body is made of quartz material.

2. The substrate processing method according to claim 1, wherein, The ion blocker is grounded.

3. The substrate processing method according to claim 1, wherein... The ion blocker also includes: A transparent conductive oxide film, wherein the transparent conductive oxide film is coated on at least one of the upper and lower surfaces of the body at a first thickness or less. The first thickness is the thickness of the material through which microwave transmission passes through the transparent conductive oxide film.

4. The substrate processing method according to claim 3, wherein, The transparent conductive oxide film is formed from one or more of the following: AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphite, metal nanowires and CNTs, or formed by multiple overlaps of the following: AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphite, metal nanowires and CNTs.

5. The substrate processing method according to claim 3, wherein, When the transparent conductive oxide film is indium tin oxide (ITO) material, the first thickness is 1 μm.

6. The substrate processing method according to claim 1, wherein, The application of the first energy is performed while the supply of the process gas is blocked.

7. The substrate processing method according to claim 1, wherein, The first energy is used to anneal the substrate.

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