Method of manufacturing a nitride light emitting device

Abstract

The present disclosure provides a preparation method of a nitride light-emitting device, comprising: preparing a bottom DBR layer as a bottom layer on a substrate; covering a single-layer or multi-layer two-dimensional material film on the bottom DBR layer to form a two-dimensional material buffer layer; sequentially growing a low-temperature GaN nucleation layer and a GaN buffer layer on the two-dimensional material buffer layer; epitaxially growing an RCLED main structure on the GaN buffer layer, wherein the RCLED main structure comprises, from bottom to top, an n-GaN layer, a multi-quantum well light-emitting layer and a p-GaN layer on the GaN buffer layer; a p-electrode is arranged on the metal oxide transparent conductive layer on both sides of the top DBR layer, and an n-electrode is arranged on the step region; an insulating layer is deposited on the surface of the nitride light-emitting device, and part of the insulating layer is removed by photolithography and etching to expose the light outlet, the p-electrode and the n-electrode, thereby completing the preparation of the nitride light-emitting device.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor lighting, in particular to a preparation method of a nitride light-emitting device. BACKGROUND

[0002] Resonant cavity light emitting diode (RCLED) is a device that uses the resonant cavity effect to enhance spontaneous emission. It not only has stronger axial light intensity and higher extraction efficiency, but also has narrower spectral linewidth, smaller divergence angle and better emission directionality, which is beneficial to coupling with plastic optical fiber. Therefore, it has wide application value in the fields of display, sensor, optical communication, local area network, etc. Among them, GaN-based RCLED is suitable for high-brightness display, biology, medicine, beauty, industrial processing, criminal investigation technology and communication, detection and other fields due to its stable physical and chemical properties and high radiation recombination efficiency. The basic structure is to embed the active region into the resonant cavity with upper and lower reflectors. The light radiated and combined in the active region is reflected back and forth in the upper and lower reflectors and produces interference, which greatly avoids the absorption of the substrate and improves the light extraction efficiency.

[0003] However, unlike GaAs system materials, the AlxIn y Ga1- x - y N / GaN DBR of GaN-based RCLED will have serious thermal and lattice mismatch problems, and it is difficult to epitaxially grow a DBR with few defects and required reflectivity. Therefore, people mostly prepare GaN-based RCLED devices by laser lifting-off and bonding to a dielectric DBR. This traditional method is complex, difficult to implement and has a very low yield. Therefore, we introduce two-dimensional materials as a buffer layer, which can isolate the influence of amorphous dielectric DBR substrate due to thermal and lattice mismatch to some extent, so that the epitaxial layer can grow according to its inherent lattice, and the GaN-based RCLED structure can be directly epitaxially grown on the dielectric DBR, thereby omitting the steps of lifting-off and bonding, simplifying the process flow, and greatly reducing the production cost and difficulty. SUMMARY

[0004] (1) Technical problems to be solved

[0005] Based on the above problems, the present disclosure provides a preparation method of a nitride light-emitting device to alleviate the technical problems such as complex preparation process in the prior art.

[0006] (2) Technical solutions

[0007] The present disclosure provides a preparation method of a nitride light-emitting device, comprising:

[0008] preparing a bottom DBR layer of a bottom layer on a substrate;

[0009] covering a single-layer or multi-layer two-dimensional material film on the bottom DBR layer to form a two-dimensional material buffer layer;

[0010] sequentially growing a low-temperature GaN nucleation layer and a GaN buffer layer on the two-dimensional material buffer layer;

[0011] epitaxially growing an RCLED main body structure on the GaN buffer layer, the RCLED main body structure comprising, from bottom to top, an n-GaN layer, a multi-quantum well light-emitting layer, and a p-GaN layer on the GaN buffer layer;

[0012] forming a high-resistance region by boron ion implantation on the p-GaN layer, and evaporating a metal oxide transparent conductive layer on the p-GaN layer;

[0013] etching the metal oxide transparent conductive layer on both sides to the n-GaN layer to form a step region;

[0014] preparing a top DBR layer of a top layer on the middle region of the metal oxide transparent conductive layer and defining a pattern by photolithography as a light outlet;

[0015] providing a p-electrode on the metal oxide transparent conductive layer on both sides of the top DBR layer and an n-electrode on the step region;

[0016] depositing an insulating layer on the surface of the nitride light-emitting device, and removing part of the insulating layer by photolithography and etching to expose the light outlet, the p-electrode, and the n-electrode, thereby completing the preparation of the nitride light-emitting device.

[0017] In the embodiments of the present disclosure, the medium DBR of the bottom DBR layer and the medium DBR of the top DBR layer are respectively two thin film media with different refractive indexes alternately grown in cycles, and the reflectivity of the medium DBR of the bottom DBR layer is greater than that of the medium DBR of the top DBR layer.

[0018] In the embodiments of the present disclosure, the material of the two-dimensional material film layer is one of graphene, boron nitride, molybdenum disulfide, and tungsten disulfide.

[0019] In the embodiments of the present disclosure, the two-dimensional material buffer layer can be prepared by one of a wet transfer method, a dry transfer method, and a CVD method.

[0020] In the embodiments of the present disclosure, the low-temperature GaN nucleation layer is located on the surface of the two-dimensional material, and the growth temperature thereof is 900-1100°C.

[0021] In the embodiments of the present disclosure, the thickness of the GaN buffer layer is 10-200 nm.

[0022] In the embodiment of the present disclosure, the n-GaN layer is used to provide electrons, which are injected into the RCLED active region of the epitaxial RCLED body structure;

[0023] The multi-quantum well light-emitting layer is an AlGaN / GaN or InGaN / GaN quantum well light-emitting layer.

[0024] The p-GaN layer is used to provide holes, which are injected into the RCLED active region of the epitaxial RCLED body structure, and is used for ohmic contact.

[0025] In the embodiment of the present disclosure, the boron ion implantation is implanting boron ions under the p-electrode, thereby forming the high resistance region, which is used to hinder the injection of current of the high resistance region.

[0026] In the embodiment of the present disclosure, the metal oxide transparent conductive layer can realize lateral current expansion and enhance light output rate in the p-electrode region.

[0027] In the embodiment of the present disclosure, the epitaxial growth method of the RCLED of the epitaxial RCLED body structure is one of MOCVD, MBE, HVPE and CVD.

[0028] (Three) beneficial effects

[0029] From the above technical solution, the nitride light-emitting device preparation method of the present disclosure has at least one or part of the following beneficial effects:

[0030] (1) By introducing two-dimensional materials as a buffer layer, the influence of thermal mismatch and lattice mismatch brought by amorphous dielectric DBR substrate can be isolated to a certain extent by using van der Waals epitaxy, so that the epitaxial layer can grow according to its inherent lattice;

[0031] (2) Direct epitaxial GaN-based RCLED structure is realized on the dielectric DBR; and

[0032] (3) The problems of laser lift-off and bonding in the traditional RCLED preparation process are omitted, and the direct epitaxy problem is further solved, which simplifies the process flow, greatly reduces the production cost and difficulty. BRIEF DESCRIPTION OF DRAWINGS

[0033] Fig. 1 The structure diagram of the nitride light-emitting device of the nitride light-emitting device preparation method of the embodiment of the present disclosure.

[0034] Fig. 2 The flowchart of the preparation method of the nitride light-emitting device preparation method of the embodiment of the present disclosure.

[0035]

Explanation of main element symbols in the drawings of the embodiment of the present disclosure

[0036] 00 substrate

[0037] 01 bottom DBR layer

[0038] 02 two-dimensional material buffer layer

[0039] 03 low-temperature GaN nucleation layer

[0040] 04 GaN buffer layer

[0041] 05 n-GaN layer

[0042] 06 multi-quantum well light-emitting layer

[0043] 07 p-GaN layer

[0044] 08 high-resistance region

[0045] 09 metal oxide transparent conductive layer

[0046] 10 top DBR layer

[0047] 11 n-electrode

[0048] 12 p-electrode

[0049] 13 insulating layer DETAILED DESCRIPTION

[0050] The present disclosure provides a preparation method of a nitride light-emitting device, which is simple and reliable in process, can prepare an RCLED device at a lower cost and with a simple process flow, omits the problems of laser ablation and bonding in the traditional RCLED preparation process, and further solves the problem of direct epitaxy.

[0051] To make the objectives, technical solutions, and advantages of the present disclosure clearer, further detailed descriptions will be given below in combination with specific embodiments and with reference to the drawings.

[0052] In the embodiments of the present disclosure, a preparation method of a nitride light-emitting device is provided, as shown in the following schematic diagram. Figs. 1-2 As shown in the following schematic diagram, the preparation method comprises the following steps.

[0053] A bottom DBR layer 01 of a bottom layer is prepared on a substrate 00;

[0054] A two-dimensional material thin film of a single layer or multiple layers is covered on the bottom DBR layer 01 to form a two-dimensional material buffer layer 02;

[0055] A low-temperature GaN nucleation layer 03 and a GaN buffer layer 04 are sequentially grown on the two-dimensional material buffer layer 02;

[0056] An epitaxial RCLED main body structure is generated on the GaN buffer layer 04, which comprises, from bottom to top, an n-GaN layer 05, a multi-quantum well light-emitting layer 06 and a p-GaN layer 07 on the GaN buffer layer 04;

[0057] Boron ion implantation is performed on the p-GaN layer 07 to form a high-resistance region 08, and a metal oxide transparent conductive layer 09 is evaporated on the p-GaN layer 07;

[0058] ICP etching is performed on both sides of the metal oxide transparent conductive layer 09 until the n-GaN layer 05 is reached, forming a step region;

[0059] A top layer DBR layer 10 is defined by photolithography on the middle region of the metal oxide transparent conductive layer 09 as a light outlet;

[0060] A p-electrode 12 is provided on the metal oxide transparent conductive layer 09 on both sides of the top layer DBR layer 10, and an n-electrode 11 is provided on the step region;

[0061] An insulating layer 13 is deposited on the surface of the nitride light-emitting device, and part of the insulating layer 13 is removed by photolithography and etching, exposing the light outlet, the p-electrode 12 and the n-electrode 11, completing the preparation.

[0062] In the embodiments of the present disclosure, the medium DBR of the bottom layer DBR layer 01 and the medium DBR of the top layer DBR layer 10 are respectively two thin film media with different refractive indexes alternately grown in cycles, and the reflectivity of the medium DBR of the bottom layer DBR layer 01 is greater than that of the medium DBR of the top layer DBR layer 10.

[0063] In the embodiments of the present disclosure, the material of the two-dimensional material thin film layer 02 is one of graphene, boron nitride, molybdenum disulfide and tungsten disulfide.

[0064] In the embodiments of the present disclosure, the two-dimensional material buffer layer 02 can be prepared by one of wet transfer, dry transfer and CVD method.

[0065] In the embodiments of the present disclosure, the low-temperature GaN nucleation layer 03 is located on the surface of the two-dimensional material, and the growth temperature is 900-1100°C.

[0066] In the embodiments of the present disclosure, the thickness of the GaN buffer layer 04 is 10-200 nm.

[0067] In the embodiments of the present disclosure, the n-GaN layer 05 is used to provide electrons, which are injected into the RCLED active region of the epitaxial RCLED main body structure;

[0068] The multi-quantum well light emitting layer 06 is an AlGaN / GaN or InGaN / GaN quantum well light emitting layer.

[0069] The p-GaN layer 07 is used to provide holes, inject into the RCLED active region of the epitaxial RCLED main body structure, and for ohmic contact.

[0070] In the embodiment of the present disclosure, the boron ion implantation is to implant boron ions under the p-electrode 12, thereby forming the high resistance region 08, which is used to hinder the injection of current of the high resistance region 08.

[0071] In the embodiment of the present disclosure, the metal oxide transparent conductive layer 09 can realize lateral current expansion and enhance light output rate in the p-electrode 12 region.

[0072] In the embodiment of the present disclosure, the epitaxial growth method of the RCLED of the epitaxial RCLED main body structure is one of MOCVD, MBE, HVPE and CVD.

[0073] Specifically, in the embodiment of the present disclosure, as shown in Figs. 1-2 The nitride light emitting device preparation method comprises the following steps:

[0074] Step one: preparing a bottom layer DBR layer on a substrate, wherein the bottom layer DBR layer is a high reflectivity medium DBR;

[0075] In some embodiments, the substrate is a sapphire substrate, a SiC substrate, a Si substrate or any other substrate.

[0076] In the embodiment, the substrate 00 is a sapphire substrate, which can be but is not limited to a sapphire substrate, and any other substrate is also applicable.

[0077] In some embodiments, the bottom layer high reflectivity medium DBR is two thin films with different refractive indexes alternately grown.

[0078] In the embodiment, the bottom layer high reflectivity medium DBR layer 01 adopts reactive ion sputtering 6 pairs of Ta2O5 / SiO2 with thicknesses of 53.51 nm / 78.5 nm, which can be but is not limited to reactive ion sputtering 6 pairs of Ta2O5 / SiO2.

[0079] Step two: covering 1-10 layers of two-dimensional material thin films on the surface of the medium DBR;

[0080] In some embodiments, the two-dimensional material thin film as a buffer layer can be a two-dimensional atomic crystal material such as graphene, boron nitride, molybdenum disulfide and tungsten disulfide; wherein the number of layers of the two-dimensional material is single layer or multiple layers.

[0081] In some embodiments, the two-dimensional material film can be prepared by wet transfer, dry transfer or CVD to form the two-dimensional material buffer layer.

[0082] In this embodiment, the two-dimensional material buffer layer 02 is a single-layer graphene film prepared by wet transfer. The graphene film can be, but is not limited to, a single-layer graphene film prepared by wet transfer.

[0083] Specifically, PMMA is spin-coated on graphene grown by CVD on a Cu foil, and then baked on a hot plate at 120°C for 15 minutes. After solidification, the graphene is immersed in a 21% FeCl3 solution for 4 hours to etch away the copper foil. The graphene film is transferred to deionized water using a transfer sheet, and then transferred to a target substrate. After drying in a nitrogen cabinet, the PMMA is removed with acetone and ethanol. For multilayer graphene, repeat the above steps to obtain multilayer graphene.

[0084] Step three: growing a low-temperature GaN nucleation layer and a GaN buffer layer on the two-dimensional material in sequence;

[0085] In some embodiments, the low-temperature GaN nucleation layer is located on the surface of the two-dimensional material, and the growth temperature thereof is 900-1100°C.

[0086] In this embodiment, the low-temperature GaN nucleation layer 03 is located on the surface of the two-dimensional material, and the growth temperature thereof is 1020°C, which can be, but is not limited to, 1020°C.

[0087] In some embodiments, the thickness of the GaN buffer layer is 10-200 nm.

[0088] In this embodiment, the GaN buffer layer 04 is located on the low-temperature GaN nucleation layer, and the thickness thereof is 100 nm, which can be, but is not limited to, 100 nm.

[0089] Specifically, a low-temperature GaN nucleation layer is grown on the graphene surface at 1020°C using a MOCVD device, and then a 100-nm undoped GaN buffer layer is grown.

[0090] Step four: epitaxially growing an RCLED main structure, including: an n-GaN layer, a multi-quantum well light-emitting layer and a p-GaN layer;

[0091] In this embodiment, the RCLED main structure includes:

[0092] The n-GaN layer 05 is used to provide electrons injected into the RCLED active region.

[0093] The multi-quantum well light-emitting layer 06 is an AlGaN / GaN or InGaN / GaN quantum well light-emitting layer.

[0094] p-GaN layer 07: for providing holes, injecting into RCLED active region, and for ohmic contact.

[0095] Specifically, MOCVD epitaxial RCLED main structure. By growing Si-doped GaN electron injection layer on GaN buffer layer, then growing In 0.10 Ga 0.90 N / GaN multi-quantum well light emitting layer, and finally growing a layer of Mg-doped GaN hole injection layer for ohmic contact.

[0096] Step five: ion implantation of boron to form a high resistance region;

[0097] In some embodiments, the boron ion implantation is to implant boron ions under the p-electrode region to form a high resistance region for limiting current injection in this region.

[0098] In this embodiment, the high resistance region 08: located under the p-electrode region, can but not limited to boron ion implantation.

[0099] Step six: evaporate metal oxide transparent conductive layer on p-GaN layer, and etch the metal oxide transparent conductive layer in n region by lithography;

[0100] In some embodiments, the metal oxide transparent conductive layer is located on the p-GaN layer, which has the characteristics of strong conductivity and high transparency, and realizes lateral current expansion and enhances light output in the p-electrode region.

[0101] In this embodiment, the metal oxide transparent conductive layer 09: 50nm is evaporated at 220℃, which is used to realize lateral current expansion, and can but not limited to metal oxide transparent conductive layer.

[0102] Step seven: use photoresist on the step region as a mask for ICP etching until the n-GaN layer is etched;

[0103] In this embodiment, the photoresist is first used to define the step region of the n-electrode, and then the photoresist on the step region is used as a mask for ICP etching until the n-GaN layer of the n-electrode region is etched. The n-electrode pattern is etched.

[0104] Step eight: define the top DBR layer by lithography, and the top DBR layer is a low reflectivity medium DBR pattern as a light outlet;

[0105] In this embodiment, the top low reflectivity medium DBR pattern layer 10: uses reactive ion sputtering 3 pairs of Ta2O5 / SiO2 with thickness of 53.51nm / 78.5nm, and can but not limited to use reactive ion sputtering 3 pairs of Ta2O5 / SiO2.

[0106] Step nine: preparation of metal electrodes;

[0107] In this embodiment, the metal n-electrode 11 and p-electrode 12 are one or more of Cu, Al, Ni, Au, Ti, Cr, Pt, etc.

[0108] Step ten: deposition of an insulating layer on the surface of the device, and photolithographic etching to remove part of the insulating layer to expose the light outlet and the metal electrode area, to complete the preparation of the device.

[0109] In some embodiments, a layer of insulating layer is deposited on the light-emitting end surface of the RCLED, except for the electrode area, light-emitting outlet, and isolation channel groove.

[0110] In this embodiment, the insulating layer 13 is deposited by plasma-enhanced chemical vapor deposition (PECVD) to deposit SiO2, and the laser p-electrode and n-electrode and light-emitting area are etched by photolithography and etching to complete the preparation of the device.

[0111] Thus far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It should be noted that the implementation methods not shown or described in the drawings or the main text are known to those skilled in the art, and are not described in detail. In addition, the definitions of the elements and methods described above are not limited to the various specific structures, shapes, or methods mentioned in the embodiments, and can be simply changed or replaced by those skilled in the art.

[0112] Based on the above description, those skilled in the art should have a clear understanding of the preparation method of the nitride light-emitting device of the present disclosure.

[0113] In summary, the present disclosure provides a preparation method of a nitride light-emitting device, which introduces two-dimensional materials as a buffer layer, uses van der Waals epitaxy to isolate the influence of thermal mismatch and lattice mismatch of amorphous dielectric DBR substrate to some extent, so that the epitaxial layer can grow according to its inherent lattice; realizes the direct epitaxy of GaN-based RCLED structure on the dielectric DBR; omits the laser lift-off and bonding problems in the traditional RCLED preparation process, and further solves the problem of direct epitaxy, simplifies the process flow, and greatly reduces the production cost and difficulty.

[0114] It should be further noted that the directional language mentioned in the embodiments, such as "up", "down", "front", "back", "left", "right", etc., is only with reference to the direction of the drawings, and is not intended to limit the protection scope of the present disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. When it may cause confusion in understanding the present disclosure, conventional structures or configurations will be omitted.

[0115] The shapes and relative sizes of the various constituent parts shown in the figures are illustrative only and may not appear to be in correct or scale proportion. Furthermore, the embodiments exemplified in the disclosure may vary as to the specific placement of the various features and the order in which they are combined, and as such should not be construed as limited to the particular embodiments illustrated herein but only by way of illustration. Also, where the description claims the use of "about" or "approximately" in connection with a value, this is meant to encompass variations that can exist in the last significant digit used in the value, as well as up to positive or negative ranges beginning with the digit used and continuing to its higher-order significant digits. For example, "about 90°" is intended to encompass all values between 85° and 95°, inclusive, while "about 90°" is intended to encompass all values between 89.4° and 90.6°, inclusive. In addition, the use of any reference signs in the claims to first area elements introduced in the work area of the claims is intended to cover the application as broadly as the terms of the claims allow, under 35 U.S.C. § 122 / 132(b).

[0116] Unless otherwise indicated, the numerical parameters in the description and the claims are approximations, and may vary depending upon the requirements of the particular application at hand. For the same reason, all numbers in structural and compositional formulas of the specification are understood to be approximations, unless otherwise indicated. At the very least, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Also, each numerical parameter should at least be construed in light of the under- standing that some error is inevitable in our measurement of any physical quantity. A numerical value should therefore be construed in dependence on the number of significant digits that have been reported, or by applying ordinary rounding techniques. Numerical parameters in the specification and claims should be construed "by the use of the common

[0117] Also, the use of the words "first", "second", "third", etc. to modify an element does not imply that the element so modified must be in any sequential, chronological or order of manufacture, but merely distinguishes that element from another element having the same name.

[0118] Also, the use of the words "first", "second", "third", etc. to modify an element does not imply that the element so modified must be in any sequential, chronological or order of manufacture, but merely distinguishes that element from another element having the same name.

[0119] Also, the use of the words "first", "second", "third", etc. to modify an element does not imply that the element so modified must be in any sequential, chronological or order of manufacture, but merely distinguishes that element from another element having the same name.

[0120] Those skilled in the art will appreciate that the modules in the apparatuses in the embodiments can be adapted and placed in one or more apparatuses other than the embodiments. The modules or units or components in the embodiments can be combined into one module or unit or component, and further can be divided into multiple sub-modules or sub-units or sub-components. Except that at least some of such features and / or processes or units are mutually exclusive, all combinations of all features disclosed in this specification (including accompanying claims, abstract and drawings) and all processes or units of any methods or apparatuses so disclosed can be adopted in any combination. Unless explicitly stated otherwise, each feature disclosed in this specification (including accompanying claims, abstract and drawings) can be replaced by alternative features providing the same, equivalent, or similar functionality. And in unitary claim recitations of a plurality of apparatuses, several of the apparatuses can be embodied by one and the same hardware item with non-coinciding functions.

[0121] Similarly, it is to be understood that the embodiments of the present disclosure described above and illustrated in the drawings are by way of example only, and are not intended to limit the various aspects of the disclosure in their full scope. In order to facilitate an understanding of one or more aspects of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, a figure, or described in a description of one or more embodiments. However, the disclosure should not be construed as reflecting a necessity to

[0122] The specific embodiments described above are further intended to address the purposes, technical solutions, and beneficial effects of the present disclosure. It should be understood that the above description is merely specific embodiments of the present disclosure, and is not intended to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A method for preparing a nitride light-emitting device, comprising: preparing a bottom DBR layer as a bottom layer on a substrate; covering a single-layer or multi-layer two-dimensional material film on the bottom DBR layer to form a two-dimensional material buffer layer, the two-dimensional material film being made of one of graphene, boron nitride, molybdenum disulfide and tungsten disulfide; growing a low-temperature GaN nucleation layer and a GaN buffer layer on the two-dimensional material buffer layer in sequence; epitaxially growing an RCLED main structure on the GaN buffer layer, the RCLED main structure comprising, from bottom to top, an n-GaN layer, a multi-quantum well light-emitting layer and a p-GaN layer on the GaN buffer layer; performing boron ion implantation on the p-GaN layer to form a high-resistance region; and evaporating a metal oxide transparent conductive layer on the p-GaN layer; etching the metal oxide transparent conductive layer on both sides thereof to the n-GaN layer to form a step region; preparing a top DBR layer as a top layer on a middle region of the metal oxide transparent conductive layer and defining a pattern on the top DBR layer by photolithography as a light-emitting opening; providing a p-electrode on the metal oxide transparent conductive layer on both sides of the top DBR layer and an n-electrode on the step region; depositing an insulating layer on the surface of the nitride light-emitting device, and removing part of the insulating layer by photolithography and etching to expose the light-emitting opening, the p-electrode and the n-electrode, thereby completing the preparation of the nitride light-emitting device.

2. The nitride light emitting device fabrication method of claim 1, wherein, The medium DBR of the bottom DBR layer and the medium DBR of the top DBR layer are respectively two thin film media with different refractive indexes alternately grown in cycles, and the reflectivity of the medium DBR of the bottom DBR layer is greater than that of the medium DBR of the top DBR layer.

3. The method for fabricating a nitride light-emitting device according to claim 1, wherein, The two-dimensional material buffer layer can be prepared by one of a wet transfer method, a dry transfer method and a CVD method.

4. The nitride light emitting device fabrication method of claim 1, wherein, The low-temperature GaN nucleation layer is located on the surface of the two-dimensional material buffer layer, and the growth temperature thereof is 900-1100℃.

5. The method of fabricating a nitride light emitting device as set forth in claim 1, wherein, The thickness of the GaN buffer layer is 10-200nm.

6. The nitride light emitting device fabrication method of claim 1, wherein, The n-GaN layer is used to provide electrons, which are injected into an RCLED active region of the epitaxial RCLED main structure. The multi-quantum well light-emitting layer is an AlGaN / GaN or InGaN / GaN quantum well light-emitting layer. The p-GaN layer is used to provide holes, which are injected into the RCLED active region of the epitaxial RCLED main structure, and to form an ohmic contact.

7. The method of fabricating a nitride light emitting device as set forth in claim 1, wherein, The boron ion implantation is performed below the p-electrode to form the high-resistance region, which is used to hinder the injection of current.

8. The method of fabricating a nitride light emitting device as set forth in claim 1, wherein, The metal oxide transparent conductive layer can realize lateral current spreading in the p-electrode region and enhance light-emitting efficiency.

9. The method of fabricating a nitride light emitting device as set forth in claim 1, wherein, The epitaxial growth method of the RCLED of the epitaxial RCLED main structure is one of MOCVD, MBE, HVPE and CVD.

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